Si
###The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions|Moritz H. Futscher,Bruno Ehrler###
(19, 19)
The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 14, '%', 5]

Si
###The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions|Moritz H. Futscher,Bruno Ehrler###
(38, 38)
 Perovskite/Si tandem solar cells have the potential to considerablyout-perform conventional solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 14, '%', 4]

Si
###The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions|Moritz H. Futscher,Bruno Ehrler###
(80, 80)
 Under standard test conditions,perovskite/Si tandem solar cells already outperform the Si single junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 14, '%', 3]

Si
###The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions|Moritz H. Futscher,Bruno Ehrler###
(94, 94)
 Under standard test conditions,perovskite/Si tandem solar cells already outperform the Si single junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 14, '%', 3]

Si
###The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions|Moritz H. Futscher,Bruno Ehrler###
(140, 140)
Under realistic conditions, however, as we show, those tandem solar cells arehardly more efficient than the Si cell alone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 14, '%', 2]

Si
###The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions|Moritz H. Futscher,Bruno Ehrler###
(162, 162)
 We model the performance ofrealistic perovskite/Si tandem solar cells under real-world climate conditions,by incorporating parasitic cell resistances, non-radiative recombination, andoptical losses into the detailed-balance limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 14, '%', 1]

Si
###The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions|Moritz H. Futscher,Bruno Ehrler###
(246, 246)
 We show quantitatively thatoptimizing these parameters in the perovskite top cell, perovskite/Si tandemsolar cells reach an efficiency advantage of up to 14% absolute, even whileleaving the Si cell untouched.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 14, '%', 0]

Si
###The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions|Moritz H. Futscher,Bruno Ehrler###
(284, 284)
 We show quantitatively thatoptimizing these parameters in the perovskite top cell, perovskite/Si tandemsolar cells reach an efficiency advantage of up to 14% absolute, even whileleaving the Si cell untouched.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 14, '%', 0]

Si
###The Sobering Reality of Perovskite/Si Tandem Solar Cells under Realistic Operating Conditions|Moritz H. Futscher,Bruno Ehrler###
(360, 360)
 Despite the rapid efficiency increase ofperovskite solar cells, our results emphasize the need for further materialdevelopment, careful device design, and light management strategies, allnecessary for highly efficient perovskite/Si tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 14, '%', 1]

As
###Highly efficient light management for perovskite solar cells|Dong-Lin Wang,Hui-Juan Cui,Guo-Jiao Hou,Zhen-Gang Zhu,Qing-Bo Yan,Gang Su###
(426, 426)
 As realizing a higher conversionefficiency of the solar cell is still the most crucial task, a great number ofschemes were proposed to minimize the carrier loss by optimizing the electricalproperties of the perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Highly efficient light management for perovskite solar cells|Dong-Lin Wang,Hui-Juan Cui,Guo-Jiao Hou,Zhen-Gang Zhu,Qing-Bo Yan,Gang Su###
(567, 567)
 In our scheme, the slottedand inverted prism structured SiO2 layers are adopted to trap more light intothe solar cells, and a better transparent conducting oxide layer is employed toreduce the parasitic absorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiO2
###Highly efficient light management for perovskite solar cells|Dong-Lin Wang,Hui-Juan Cui,Guo-Jiao Hou,Zhen-Gang Zhu,Qing-Bo Yan,Gang Su###
(587, 589)
 In our scheme, the slottedand inverted prism structured SiO2 layers are adopted to trap more light intothe solar cells, and a better transparent conducting oxide layer is employed toreduce the parasitic absorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Moon's Radiation Environment and Expected Performance of Solar Cells during Future Lunar Missions|T. E Girish,S Aranya###
(859, 859)
 In this paper some aspects of the solar cell performanceexpected under variable lunar radiation environment during future spacemissions to moon are addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1107, 1109)
Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1111, 1111)
Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1163, 1165)
 The paper presents a quantitative approach to the investigation andcomparison of the material qualities of III-V on silicon (III-V/Si) solar cellsby using external radiative efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1167, 1167)
 The paper presents a quantitative approach to the investigation andcomparison of the material qualities of III-V on silicon (III-V/Si) solar cellsby using external radiative efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1174, 1176)
 The paper presents a quantitative approach to the investigation andcomparison of the material qualities of III-V on silicon (III-V/Si) solar cellsby using external radiative efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1180, 1180)
 The paper presents a quantitative approach to the investigation andcomparison of the material qualities of III-V on silicon (III-V/Si) solar cellsby using external radiative efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1245, 1247)
 We use this analysis to predict thelimiting efficiencies and evaluate the criteria of material quality in order toachieve high efficiency III-V/Si solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/Si
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1249, 1251)
 We use this analysis to predict thelimiting efficiencies and evaluate the criteria of material quality in order toachieve high efficiency III-V/Si solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

III
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1281, 1283)
 This result yields severalimplications for the design of high efficiency III-V/Si solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/Si
###Assessing Material Qualities and Efficiency Limits of III-V on Silicon Solar Cells Using External Radiative Efficiency|Kan-Hua Lee,Kenji Araki,Li Wang,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi###
(1285, 1287)
 This result yields severalimplications for the design of high efficiency III-V/Si solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

PC
###Two-Terminal Tandem Solar Cells based on Perovskite and Transition Metal Dichalcogenides|Harishankar Suman,Avijit Kumar###
(1344, 1345)
 Perovskite solar cells have shown power conversion efficiencies (PCE)comparable to cystalline silicon solar cell despite involving low-temperature,solution based synthesis processes outside clean room environment.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1.55, 'eV', 1],[235.0, 2, 'T', 3],[262.0, 1.55, 'eV', 3],[274.0, 1.1, 'eV', 3],[294.0, 1.5, 'G', 3]

As
###Two-Terminal Tandem Solar Cells based on Perovskite and Transition Metal Dichalcogenides|Harishankar Suman,Avijit Kumar###
(1389, 1389)
 As thetheoretical PCE<missing VAR> of a perovskite solar cell with band gap 1.55 eV is capped to33 % due to Shockley-Queisser limit, tandem configurations are beinginvestigated to go beyond this limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.55, 'eV', 0],[191.0, 2, 'T', 2],[218.0, 1.55, 'eV', 2],[230.0, 1.1, 'eV', 2],[250.0, 1.5, 'G', 2]

PC
###Two-Terminal Tandem Solar Cells based on Perovskite and Transition Metal Dichalcogenides|Harishankar Suman,Avijit Kumar###
(1396, 1397)
 As thetheoretical PCE<missing VAR> of a perovskite solar cell with band gap 1.55 eV is capped to33 % due to Shockley-Queisser limit, tandem configurations are beinginvestigated to go beyond this limit.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1.55, 'eV', 0],[183.0, 2, 'T', 2],[210.0, 1.55, 'eV', 2],[222.0, 1.1, 'eV', 2],[242.0, 1.5, 'G', 2]

SC
###Two-Terminal Tandem Solar Cells based on Perovskite and Transition Metal Dichalcogenides|Harishankar Suman,Avijit Kumar###
(1557, 1558)
 Here, we propose a two-terminal (2T)tandem solar cell structure consisting of perovskite and multilayer transitionmetal dichalcogenide as the absorber layers of the top and the bottom subcells,respectively and investigate their performance parameters using Solar CellCapacitance Simulator-1 Dimension (SCAPS-1D) software package.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 1.55, 'eV', 1],[22.0, 2, 'T', 1],[49.0, 1.55, 'eV', 1],[61.0, 1.1, 'eV', 1],[81.0, 1.5, 'G', 1]

PS
###Two-Terminal Tandem Solar Cells based on Perovskite and Transition Metal Dichalcogenides|Harishankar Suman,Avijit Kumar###
(1560, 1561)
 Here, we propose a two-terminal (2T)tandem solar cell structure consisting of perovskite and multilayer transitionmetal dichalcogenide as the absorber layers of the top and the bottom subcells,respectively and investigate their performance parameters using Solar CellCapacitance Simulator-1 Dimension (SCAPS-1D) software package.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1.55, 'eV', 1],[19.0, 2, 'T', 1],[46.0, 1.55, 'eV', 1],[58.0, 1.1, 'eV', 1],[78.0, 1.5, 'G', 1]

CH3NH3PbI3
###Two-Terminal Tandem Solar Cells based on Perovskite and Transition Metal Dichalcogenides|Harishankar Suman,Avijit Kumar###
(1592, 1600)
 We demonstratethat the 2T tandem solar cell consisting of CH3NH3PbI3 with band gap 1.55 eVand MoTe2 with bandgap 1.1 eV shows PCE<missing VAR> of maximum 35.3 % under AM<missing VAR> 1.5 Gillumination.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 1.55, 'eV', 2],[12.0, 2, 'T', 0],[7.0, 1.55, 'eV', 0],[19.0, 1.1, 'eV', 0],[39.0, 1.5, 'G', 0]

MoTe2
###Two-Terminal Tandem Solar Cells based on Perovskite and Transition Metal Dichalcogenides|Harishankar Suman,Avijit Kumar###
(1612, 1614)
 We demonstratethat the 2T tandem solar cell consisting of CH3NH3PbI3 with band gap 1.55 eVand MoTe2 with bandgap 1.1 eV shows PCE<missing VAR> of maximum 35.3 % under AM<missing VAR> 1.5 Gillumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 1.55, 'eV', 2],[32.0, 2, 'T', 0],[5.0, 1.55, 'eV', 0],[5.0, 1.1, 'eV', 0],[25.0, 1.5, 'G', 0]

PC
###Two-Terminal Tandem Solar Cells based on Perovskite and Transition Metal Dichalcogenides|Harishankar Suman,Avijit Kumar###
(1623, 1624)
 We demonstratethat the 2T tandem solar cell consisting of CH3NH3PbI3 with band gap 1.55 eVand MoTe2 with bandgap 1.1 eV shows PCE<missing VAR> of maximum 35.3 % under AM<missing VAR> 1.5 Gillumination.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 1.55, 'eV', 2],[43.0, 2, 'T', 0],[16.0, 1.55, 'eV', 0],[4.0, 1.1, 'eV', 0],[15.0, 1.5, 'G', 0]

GaAs
###Electromagnetic approach to ultrathin solar cell efficiencies|A. Niv,M. Gharghi,Z. R. Abrams,C. Gladden,X. Zhang###
(1808, 1809)
 Our approach is demonstrated by calculating the efficiency of a GaAssolar cell with an Au back reflector for thicknesses well below the typicalwavelength of the solar flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Electromagnetic approach to ultrathin solar cell efficiencies|A. Niv,M. Gharghi,Z. R. Abrams,C. Gladden,X. Zhang###
(1820, 1820)
 Our approach is demonstrated by calculating the efficiency of a GaAssolar cell with an Au back reflector for thicknesses well below the typicalwavelength of the solar flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Double-absorber thin-film solar cell with 34% efficiency|Faiz Ahamd,Akhlesh Lakhtakia,Peter B. Monk###
(2071, 2072)
 With a 300-nm-thick CIG<missing VAR>Sabsorber layer and an870-nm-thick CZTSSeabsorber layer, an efficiency of 34.45% is predicted bya detailed optoelectronic model, provided that the grading of bandgap energy isoptimal in both absorber layers.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 34, '%', 4],[34.0, 34.45, '%', 0]

S
###Double-absorber thin-film solar cell with 34% efficiency|Faiz Ahamd,Akhlesh Lakhtakia,Peter B. Monk###
(2074, 2074)
 With a 300-nm-thick CIG<missing VAR>Sabsorber layer and an870-nm-thick CZTSSeabsorber layer, an efficiency of 34.45% is predicted bya detailed optoelectronic model, provided that the grading of bandgap energy isoptimal in both absorber layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 34, '%', 4],[32.0, 34.45, '%', 0]

C
###Double-absorber thin-film solar cell with 34% efficiency|Faiz Ahamd,Akhlesh Lakhtakia,Peter B. Monk###
(2090, 2090)
 With a 300-nm-thick CIG<missing VAR>Sabsorber layer and an870-nm-thick CZTSSeabsorber layer, an efficiency of 34.45% is predicted bya detailed optoelectronic model, provided that the grading of bandgap energy isoptimal in both absorber layers.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 34, '%', 4],[16.0, 34.45, '%', 0]

SSe
###Double-absorber thin-film solar cell with 34% efficiency|Faiz Ahamd,Akhlesh Lakhtakia,Peter B. Monk###
(2093, 2094)
 With a 300-nm-thick CIG<missing VAR>Sabsorber layer and an870-nm-thick CZTSSeabsorber layer, an efficiency of 34.45% is predicted bya detailed optoelectronic model, provided that the grading of bandgap energy isoptimal in both absorber layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 34, '%', 4],[12.0, 34.45, '%', 0]

(CS)
###Temperature coefficient of Silicon based carrier selective solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(2184, 2187)
 Carrier Selective (CS) Silicon solar cells are increasingly explored as a lowcost alternative to PN junction Silicon solar cells.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PN
###Temperature coefficient of Silicon based carrier selective solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(2214, 2215)
 Carrier Selective (CS) Silicon solar cells are increasingly explored as a lowcost alternative to PN junction Silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CS
###Temperature coefficient of Silicon based carrier selective solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(2365, 2366)
 Our results indicate that irrespective of theinterface quality, the temperature coefficient of CS solar cells improves withan increase in band discontinuities.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CS
###Temperature coefficient of Silicon based carrier selective solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(2424, 2425)
 Interestingly, contrary to the trendsrelated to efficiency, our results indicate that the temperature coefficient ofCS solar cells is more critically affected by the interface quality of theminority carrier extraction layer than the majority carrier extraction layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Temperature coefficient of Silicon based carrier selective solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(2505, 2505)
These insights have important implications towards the choice of optimalmaterial and processing conditions for Si based CS solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CS
###Temperature coefficient of Silicon based carrier selective solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(2509, 2510)
These insights have important implications towards the choice of optimalmaterial and processing conditions for Si based CS solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Axial vs. Radial Junction Nanowire Solar Cell|Vidur Raj,Hark Hoe Tan,Chennupati Jagadish###
(2687, 2687)
 In particular, we start byreviewing different results on how the absorption can be tuned in axial andradial junction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnS2
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2869, 2871)
Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnS
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2879, 2880)
Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2890, 2890)
Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2893, 2893)
Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2901, 2902)
Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2904, 2905)
Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2919, 2919)
 A Copper-Zinc-Tin-Sulphide (CZTS)based solar cell with a modified ce3llconfiguration of Mo/SnS/CZTS/SnS2/ZnO is simulated using SCAPS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2922, 2922)
 A Copper-Zinc-Tin-Sulphide (CZTS)based solar cell with a modified ce3llconfiguration of Mo/SnS/CZTS/SnS2/ZnO is simulated using SCAPS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo/SnS/C
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2945, 2950)
 A Copper-Zinc-Tin-Sulphide (CZTS)based solar cell with a modified ce3llconfiguration of Mo/SnS/CZTS/SnS2/ZnO is simulated using SCAPS.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S/SnS2/ZnO
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2953, 2960)
 A Copper-Zinc-Tin-Sulphide (CZTS)based solar cell with a modified ce3llconfiguration of Mo/SnS/CZTS/SnS2/ZnO is simulated using SCAPS.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SC
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2968, 2969)
 A Copper-Zinc-Tin-Sulphide (CZTS)based solar cell with a modified ce3llconfiguration of Mo/SnS/CZTS/SnS2/ZnO is simulated using SCAPS.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2971, 2972)
 A Copper-Zinc-Tin-Sulphide (CZTS)based solar cell with a modified ce3llconfiguration of Mo/SnS/CZTS/SnS2/ZnO is simulated using SCAPS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnS2
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(2977, 2979)
 An SnS2 bufferlayer is used in simulation instead of the standard CdS layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(3002, 3003)
 An SnS2 bufferlayer is used in simulation instead of the standard CdS layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnS
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(3023, 3024)
 An additionalback surface passivation layer of SnS is added in the modified cellconfiguration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(3065, 3066)
 An improvement in the solar cell efficiency compared to thestandard CdS buffer based solar cell configuration Mo/CZTS/CdS/ZnO is found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo/C
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(3078, 3080)
 An improvement in the solar cell efficiency compared to thestandard CdS buffer based solar cell configuration Mo/CZTS/CdS/ZnO is found.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S/CdS/ZnO
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(3083, 3089)
 An improvement in the solar cell efficiency compared to thestandard CdS buffer based solar cell configuration Mo/CZTS/CdS/ZnO is found.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SnS2
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(3111, 3113)
The observations suggest the possibility of using SnS2 as a potentialreplacement of CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(3126, 3127)
The observations suggest the possibility of using SnS2 as a potentialreplacement of CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Analysis Of SnS2 Buffer Layer And SnS Back Surface Layer Based CZTS Solar Cells Using SCAPS|Atul Kumar,Ajay D. Thakur###
(3130, 3130)
 In addition, the use of a back surface passivation layerleads to improved solar cell performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###On the Nature of Localization in Ti doped Si|Yi Zhang,R. Nelson,K. -M. Tam,W. Ku,U. Yu,N. S. Vidhyadhiraja,H. Terletska,J. Moreno,M. Jarrell,T. Berlijn###
(3185, 3185)
On the Nature of Localization in Ti doped Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###On the Nature of Localization in Ti doped Si|Yi Zhang,R. Nelson,K. -M. Tam,W. Ku,U. Yu,N. S. Vidhyadhiraja,H. Terletska,J. Moreno,M. Jarrell,T. Berlijn###
(3189, 3189)
On the Nature of Localization in Ti doped Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###On the Nature of Localization in Ti doped Si|Yi Zhang,R. Nelson,K. -M. Tam,W. Ku,U. Yu,N. S. Vidhyadhiraja,H. Terletska,J. Moreno,M. Jarrell,T. Berlijn###
(3275, 3275)
 We apply a recently developed first principles method to investigatethe origin of electron localization in Ti doped Si, a promising candidate forintermediate band solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###On the Nature of Localization in Ti doped Si|Yi Zhang,R. Nelson,K. -M. Tam,W. Ku,U. Yu,N. S. Vidhyadhiraja,H. Terletska,J. Moreno,M. Jarrell,T. Berlijn###
(3279, 3279)
 We apply a recently developed first principles method to investigatethe origin of electron localization in Ti doped Si, a promising candidate forintermediate band solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###On the Nature of Localization in Ti doped Si|Yi Zhang,R. Nelson,K. -M. Tam,W. Ku,U. Yu,N. S. Vidhyadhiraja,H. Terletska,J. Moreno,M. Jarrell,T. Berlijn###
(3341, 3341)
 Although Anderson localization is oftenoverlooked in the context of intermediate band solar cells, our results showthat in Ti doped Si it plays a more important role in the metal insulatortransition than Mott localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###On the Nature of Localization in Ti doped Si|Yi Zhang,R. Nelson,K. -M. Tam,W. Ku,U. Yu,N. S. Vidhyadhiraja,H. Terletska,J. Moreno,M. Jarrell,T. Berlijn###
(3345, 3345)
 Although Anderson localization is oftenoverlooked in the context of intermediate band solar cells, our results showthat in Ti doped Si it plays a more important role in the metal insulatortransition than Mott localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###High-Temperature Annealing of TiO2 Nanotube Membranes for Efficient Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Marco Altomare,Seulgi So,Kiyoung Lee,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(3417, 3419)
High-Temperature Annealing of TiO2 Nanotube Membranes for Efficient Dye-Sensitized Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 8.0, '%', 4]

TiO2
###High-Temperature Annealing of TiO2 Nanotube Membranes for Efficient Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Marco Altomare,Seulgi So,Kiyoung Lee,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(3452, 3454)
 We fabricate photo-anodes by transferring anodic TiO2 nanotube membranes intube-top-down configuration on FT<missing VAR>O glass, and use them for constructingfrontside illuminated dye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 8.0, '%', 3]

F
###High-Temperature Annealing of TiO2 Nanotube Membranes for Efficient Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Marco Altomare,Seulgi So,Kiyoung Lee,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(3473, 3473)
 We fabricate photo-anodes by transferring anodic TiO2 nanotube membranes intube-top-down configuration on FT<missing VAR>O glass, and use them for constructingfrontside illuminated dye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 8.0, '%', 3]

O
###High-Temperature Annealing of TiO2 Nanotube Membranes for Efficient Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Marco Altomare,Seulgi So,Kiyoung Lee,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(3475, 3475)
 We fabricate photo-anodes by transferring anodic TiO2 nanotube membranes intube-top-down configuration on FT<missing VAR>O glass, and use them for constructingfrontside illuminated dye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 8.0, '%', 3]

C
###High-Temperature Annealing of TiO2 Nanotube Membranes for Efficient Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Marco Altomare,Seulgi So,Kiyoung Lee,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(3542, 3542)
 Prior to solar cellconstruction, the tube-based photo-anodes are crystallized at differenttemperatures (400-800degC), and the effects of tube electron transportproperties on the photovoltaic performance of the solar cells are investigated.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 8.0, '%', 2]

C
###High-Temperature Annealing of TiO2 Nanotube Membranes for Efficient Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Marco Altomare,Seulgi So,Kiyoung Lee,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(3676, 3676)
 Consistently with electrontransport time measurements, remarkably enhanced electron mobility is enabledwhen tube membranes are crystallized at 600degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 8.0, '%', 1]

In
###Effect of the shell material and confinement type on the conversion efficiency of the core/shell quantum dot nanocrystal solar cells|Mehmet Sahin###
(3730, 3730)
 In this study, effects of the shell material and confinement type on theconversion efficiency of the core/shell quantum dot nanocrystal (QDNC) solarcells have been investigated in a detail manner.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Effect of the shell material and confinement type on the conversion efficiency of the core/shell quantum dot nanocrystal solar cells|Mehmet Sahin###
(3780, 3780)
 In this study, effects of the shell material and confinement type on theconversion efficiency of the core/shell quantum dot nanocrystal (QDNC) solarcells have been investigated in a detail manner.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NC
###Effect of the shell material and confinement type on the conversion efficiency of the core/shell quantum dot nanocrystal solar cells|Mehmet Sahin###
(3910, 3911)
 For this purpose, theconventional, i.e original, detailed balance model, developed by Shockley andQueisser to calculate an upper limit for conversion efficiency of silicon p-njunction solar cells, is modified in a simple and an effective way andcalculated the conversion efficiency of core/shell QDNC solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NC
###Effect of the shell material and confinement type on the conversion efficiency of the core/shell quantum dot nanocrystal solar cells|Mehmet Sahin###
(3974, 3975)
 Since theexisting model relies on the gap energy (Eg) of the solar cell, it does notmake an estimation about the effect of QDNC materials on the efficiency of thesolar cells and gives the same efficiency values for several QDNC solar cellswith the same Eg.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NC
###Effect of the shell material and confinement type on the conversion efficiency of the core/shell quantum dot nanocrystal solar cells|Mehmet Sahin###
(4012, 4013)
 Since theexisting model relies on the gap energy (Eg) of the solar cell, it does notmake an estimation about the effect of QDNC materials on the efficiency of thesolar cells and gives the same efficiency values for several QDNC solar cellswith the same Eg.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCs
###Effect of the shell material and confinement type on the conversion efficiency of the core/shell quantum dot nanocrystal solar cells|Mehmet Sahin###
(4076, 4077)
 The proposed modification, however, estimates a conversionefficiency in relation to the material properties and also confinement type ofthe QDNCs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NC
###Effect of the shell material and confinement type on the conversion efficiency of the core/shell quantum dot nanocrystal solar cells|Mehmet Sahin###
(4123, 4124)
 The results of the modified model show that, in contrast to theoriginal one, the conversion efficiencies of different QDNC solar cells, evenif they have the same Eg, become different depending upon the confinementtype and shell material of the core/shell QDNCs and this is crucial in designand fabrication of the new generation solar cells to predict the confinementtype and also appropriate QDNC materials for better efficiency.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCs
###Effect of the shell material and confinement type on the conversion efficiency of the core/shell quantum dot nanocrystal solar cells|Mehmet Sahin###
(4179, 4180)
 The results of the modified model show that, in contrast to theoriginal one, the conversion efficiencies of different QDNC solar cells, evenif they have the same Eg, become different depending upon the confinementtype and shell material of the core/shell QDNCs and this is crucial in designand fabrication of the new generation solar cells to predict the confinementtype and also appropriate QDNC materials for better efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NC
###Effect of the shell material and confinement type on the conversion efficiency of the core/shell quantum dot nanocrystal solar cells|Mehmet Sahin###
(4230, 4231)
 The results of the modified model show that, in contrast to theoriginal one, the conversion efficiencies of different QDNC solar cells, evenif they have the same Eg, become different depending upon the confinementtype and shell material of the core/shell QDNCs and this is crucial in designand fabrication of the new generation solar cells to predict the confinementtype and also appropriate QDNC materials for better efficiency.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Computational design of organic solar cell active layer through genetic algorithm|Caine Ardayfio###
(4573, 4575)
The designed morphologies feature two dendritic clusters of the donor materialpoly(3-hexylthiophene-2,5-diyl) (P3HT) and the acceptor materialphenyl-C61-Butyric-Acid-Methyl Ester (PCBM).
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 40.29, '%', 1],[9.0, -2, ',', 0]

C61
###Computational design of organic solar cell active layer through genetic algorithm|Caine Ardayfio###
(4590, 4591)
The designed morphologies feature two dendritic clusters of the donor materialpoly(3-hexylthiophene-2,5-diyl) (P3HT) and the acceptor materialphenyl-C61-Butyric-Acid-Methyl Ester (PCBM).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 40.29, '%', 1],[26.0, -2, ',', 0]

PCB
###Computational design of organic solar cell active layer through genetic algorithm|Caine Ardayfio###
(4602, 4604)
The designed morphologies feature two dendritic clusters of the donor materialpoly(3-hexylthiophene-2,5-diyl) (P3HT) and the acceptor materialphenyl-C61-Butyric-Acid-Methyl Ester (PCBM).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 40.29, '%', 1],[38.0, -2, ',', 0]

P3H
###Computational design of organic solar cell active layer through genetic algorithm|Caine Ardayfio###
(4646, 4648)
 The designed microstructures<missing VAR>increase in performance contrasts with more conventional structures featuringinterdigitated or bilayer strands of P3HT<missing VAR> and PCBM<missing VAR>.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 40.29, '%', 2],[82.0, -2, ',', 1]

PCB
###Computational design of organic solar cell active layer through genetic algorithm|Caine Ardayfio###
(4653, 4655)
 The designed microstructures<missing VAR>increase in performance contrasts with more conventional structures featuringinterdigitated or bilayer strands of P3HT<missing VAR> and PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 40.29, '%', 2],[89.0, -2, ',', 1]

III
###III-V Solar Cells|James P. Connolly,Denis Mencaraglia###
(4774, 4776)
III-V Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###III-V Solar Cells|James P. Connolly,Denis Mencaraglia###
(4778, 4778)
III-V Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###III-V Solar Cells|James P. Connolly,Denis Mencaraglia###
(4785, 4787)
 III-V materials show a wide range of gaps making them ideal for the design ofhigh efficiency solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###III-V Solar Cells|James P. Connolly,Denis Mencaraglia###
(4789, 4789)
 III-V materials show a wide range of gaps making them ideal for the design ofhigh efficiency solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5130, 5131)
Efficient indoor p-i-n<missing VAR> hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 6, 'nm', 5],[432.0, 1, 'Sun', 8]

P
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5251, 5251)
 However this structure mostly uses PEDOT<missing VAR>PSS as a hole transportinglayer which can accelerate the perovskite solar cell degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 6, 'nm', 2],[312.0, 1, 'Sun', 5]

O
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5254, 5254)
 However this structure mostly uses PEDOT<missing VAR>PSS as a hole transportinglayer which can accelerate the perovskite solar cell degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 6, 'nm', 2],[309.0, 1, 'Sun', 5]

PSS
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5256, 5258)
 However this structure mostly uses PEDOT<missing VAR>PSS as a hole transportinglayer which can accelerate the perovskite solar cell degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 6, 'nm', 2],[305.0, 1, 'Sun', 5]

H
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5309, 5309)
 Hence thedevelopment of stable, inorganic hole extraction layers (HEL), withoutcompromising the simplicity of device fabrication is crucial in thisfast-growing photovoltaic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 6, 'nm', 1],[254.0, 1, 'Sun', 4]

C
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5365, 5365)
 Here we demonstrate a low temperature (100o<missing VAR>C) solution - processed and ultrathin ( 6 nm) NiO nanoparticle thin films asan efficient HEL for CH3NH3PbI3 based perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 6, 'nm', 0],[198.0, 1, 'Sun', 3]

NiO
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5382, 5383)
 Here we demonstrate a low temperature (100o<missing VAR>C) solution - processed and ultrathin ( 6 nm) NiO nanoparticle thin films asan efficient HEL for CH3NH3PbI3 based perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 6, 'nm', 0],[180.0, 1, 'Sun', 3]

H
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5398, 5398)
 Here we demonstrate a low temperature (100o<missing VAR>C) solution - processed and ultrathin ( 6 nm) NiO nanoparticle thin films asan efficient HEL for CH3NH3PbI3 based perovskite solar cells.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 6, 'nm', 0],[165.0, 1, 'Sun', 3]

CH3NH3PbI3
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5404, 5412)
 Here we demonstrate a low temperature (100o<missing VAR>C) solution - processed and ultrathin ( 6 nm) NiO nanoparticle thin films asan efficient HEL for CH3NH3PbI3 based perovskite solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 6, 'nm', 0],[151.0, 1, 'Sun', 3]

PC
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5437, 5438)
 We measure apower conversion efficiency (PCE) of 13.3 % on rigid glass substrates and 8.5 %on flexible substrates.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 6, 'nm', 1],[125.0, 1, 'Sun', 2]

P
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5476, 5476)
 A comparison with PEDOT<missing VAR>PSS based M<missing VAR>APbI3 solar cells(PCE<missing VAR>  7.9 %) shows that NiO based solar cells have higher short circuitcurrent density and improved open circuit voltage (1.03V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 6, 'nm', 2],[87.0, 1, 'Sun', 1]

O
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5479, 5479)
 A comparison with PEDOT<missing VAR>PSS based M<missing VAR>APbI3 solar cells(PCE<missing VAR>  7.9 %) shows that NiO based solar cells have higher short circuitcurrent density and improved open circuit voltage (1.03V).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 6, 'nm', 2],[84.0, 1, 'Sun', 1]

PSS
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5481, 5483)
 A comparison with PEDOT<missing VAR>PSS based M<missing VAR>APbI3 solar cells(PCE<missing VAR>  7.9 %) shows that NiO based solar cells have higher short circuitcurrent density and improved open circuit voltage (1.03V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 6, 'nm', 2],[80.0, 1, 'Sun', 1]

PbI3
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5489, 5491)
 A comparison with PEDOT<missing VAR>PSS based M<missing VAR>APbI3 solar cells(PCE<missing VAR>  7.9 %) shows that NiO based solar cells have higher short circuitcurrent density and improved open circuit voltage (1.03V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 6, 'nm', 2],[72.0, 1, 'Sun', 1]

PC
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5499, 5500)
 A comparison with PEDOT<missing VAR>PSS based M<missing VAR>APbI3 solar cells(PCE<missing VAR>  7.9 %) shows that NiO based solar cells have higher short circuitcurrent density and improved open circuit voltage (1.03V).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 6, 'nm', 2],[63.0, 1, 'Sun', 1]

NiO
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5513, 5514)
 A comparison with PEDOT<missing VAR>PSS based M<missing VAR>APbI3 solar cells(PCE<missing VAR>  7.9 %) shows that NiO based solar cells have higher short circuitcurrent density and improved open circuit voltage (1.03V).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 6, 'nm', 2],[49.0, 1, 'Sun', 1]

V
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5547, 5547)
 A comparison with PEDOT<missing VAR>PSS based M<missing VAR>APbI3 solar cells(PCE<missing VAR>  7.9 %) shows that NiO based solar cells have higher short circuitcurrent density and improved open circuit voltage (1.03V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 6, 'nm', 2],[16.0, 1, 'Sun', 1]

NiO
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5579, 5580)
 Apart from thephotovoltaic performance under 1 Sun, the efficient hole extraction property ofNiO is demonstrated for indoor lighting as well with a PCE<missing VAR> of 23.0 % for NiObased CH3NH3PbI2.9Cl0.1 p-i-n<missing VAR> solar cells under compact fluorescent lighting.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 6, 'nm', 3],[16.0, 1, 'Sun', 0]

PC
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5600, 5601)
 Apart from thephotovoltaic performance under 1 Sun, the efficient hole extraction property ofNiO is demonstrated for indoor lighting as well with a PCE<missing VAR> of 23.0 % for NiObased CH3NH3PbI2.9Cl0.1 p-i-n<missing VAR> solar cells under compact fluorescent lighting.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 6, 'nm', 3],[37.0, 1, 'Sun', 0]

NiO
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5612, 5613)
 Apart from thephotovoltaic performance under 1 Sun, the efficient hole extraction property ofNiO is demonstrated for indoor lighting as well with a PCE<missing VAR> of 23.0 % for NiObased CH3NH3PbI2.9Cl0.1 p-i-n<missing VAR> solar cells under compact fluorescent lighting.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 6, 'nm', 3],[49.0, 1, 'Sun', 0]

CH3NH3PbI2.9Cl0.1
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5618, 5628)
 Apart from thephotovoltaic performance under 1 Sun, the efficient hole extraction property ofNiO is demonstrated for indoor lighting as well with a PCE<missing VAR> of 23.0 % for NiObased CH3NH3PbI2.9Cl0.1 p-i-n<missing VAR> solar cells under compact fluorescent lighting.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0.008333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.24166666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 6, 'nm', 3],[55.0, 1, 'Sun', 0]

P
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5666, 5666)
Compared to the perovskite solar cells fabricated on PEDOT<missing VAR>PSS HEL, bettershelf-life stability is observed for perovskite solar cells fabricated on NiOHEL.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 6, 'nm', 4],[103.0, 1, 'Sun', 1]

O
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5669, 5669)
Compared to the perovskite solar cells fabricated on PEDOT<missing VAR>PSS HEL, bettershelf-life stability is observed for perovskite solar cells fabricated on NiOHEL.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 6, 'nm', 4],[106.0, 1, 'Sun', 1]

PSS
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5671, 5673)
Compared to the perovskite solar cells fabricated on PEDOT<missing VAR>PSS HEL, bettershelf-life stability is observed for perovskite solar cells fabricated on NiOHEL.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 6, 'nm', 4],[108.0, 1, 'Sun', 1]

H
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5675, 5675)
Compared to the perovskite solar cells fabricated on PEDOT<missing VAR>PSS HEL, bettershelf-life stability is observed for perovskite solar cells fabricated on NiOHEL.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 6, 'nm', 4],[112.0, 1, 'Sun', 1]

NiO
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5705, 5706)
Compared to the perovskite solar cells fabricated on PEDOT<missing VAR>PSS HEL, bettershelf-life stability is observed for perovskite solar cells fabricated on NiOHEL.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 6, 'nm', 4],[142.0, 1, 'Sun', 1]

H
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5709, 5709)
Compared to the perovskite solar cells fabricated on PEDOT<missing VAR>PSS HEL, bettershelf-life stability is observed for perovskite solar cells fabricated on NiOHEL.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 6, 'nm', 4],[146.0, 1, 'Sun', 1]

CH3NH3PbI3
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5752, 5760)
 Detailed microstructural and photophysical investigations imply uniformmorphology, lower recombination losses, and improved charge transfer propertiesfor CH3NH3PbI3 grown on NiO HEL.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 6, 'nm', 5],[189.0, 1, 'Sun', 2]

NiO
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5766, 5767)
 Detailed microstructural and photophysical investigations imply uniformmorphology, lower recombination losses, and improved charge transfer propertiesfor CH3NH3PbI3 grown on NiO HEL.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 6, 'nm', 5],[203.0, 1, 'Sun', 2]

H
###Efficient indoor p-i-n hybrid perovskite solar cells using low temperature solution processed NiO as hole extraction layers|Lethy Krishnan Jagadamma,Oskar Blaszczyk,Muhammad T. Sajjad,Arvydas Ruseckas,Ifor D. W. Samuel###
(5769, 5769)
 Detailed microstructural and photophysical investigations imply uniformmorphology, lower recombination losses, and improved charge transfer propertiesfor CH3NH3PbI3 grown on NiO HEL.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 6, 'nm', 5],[206.0, 1, 'Sun', 2]

GaAs
###High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin###
(6261, 6262)
High performance solar cells based on graphene-GaAs heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 10.4, '%', 4],[194.0, 15.5, '%', 4],[225.0, 15.5, '%', 5],[254.0, 14.5, '%', 5],[274.0, 25.8, '%', 6]

GaAs
###High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin###
(6344, 6345)
 For solar cellapplications, GaAs is superior to silicon as it has a direct band gap of 1.42e<missing VAR>V and its electron mobility is six times of that of silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 10.4, '%', 2],[111.0, 15.5, '%', 2],[142.0, 15.5, '%', 3],[171.0, 14.5, '%', 3],[191.0, 25.8, '%', 4]

V
###High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin###
(6375, 6375)
 For solar cellapplications, GaAs is superior to silicon as it has a direct band gap of 1.42e<missing VAR>V and its electron mobility is six times of that of silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 10.4, '%', 2],[81.0, 15.5, '%', 2],[112.0, 15.5, '%', 3],[141.0, 14.5, '%', 3],[161.0, 25.8, '%', 4]

GaAs
###High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin###
(6406, 6407)
 However,graphene/GaAs solar cell has been rarely explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 10.4, '%', 1],[49.0, 15.5, '%', 1],[80.0, 15.5, '%', 2],[109.0, 14.5, '%', 2],[129.0, 25.8, '%', 3]

GaAs
###High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin###
(6432, 6433)
 Herein, we reportgraphene/GaAs solar cells with conversion efficiency (Eta) of 10.4% and 15.5%without and with anti-reflection layer on graphene, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 10.4, '%', 0],[23.0, 15.5, '%', 0],[54.0, 15.5, '%', 1],[83.0, 14.5, '%', 1],[103.0, 25.8, '%', 2]

Si
###High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin###
(6510, 6510)
 The Eta of15.5% is higher than the state of art efficiency for graphene/Si system(14.5%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 10.4, '%', 1],[54.0, 15.5, '%', 1],[23.0, 15.5, '%', 0],[6.0, 14.5, '%', 0],[26.0, 25.8, '%', 1]

GaAs
###High performance solar cells based on graphene-GaAs heterostructures|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Huikai Zhong,Zhiqian Wu,Hongshen Chen,Cheng Liu,Shisheng Lin###
(6595, 6596)
 This research stronglysupport graphene/GaAs hetero-structure solar cell have great potential forpractical applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 10.4, '%', 3],[139.0, 15.5, '%', 3],[108.0, 15.5, '%', 2],[79.0, 14.5, '%', 2],[59.0, 25.8, '%', 1]

InGaN/GaN
###Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells|Ross Cheriton,Sharif M. Sadaf,Luc Robichaud,Jacob J. Krich,Zetian Mi,Karin Hinzer###
(6636, 6641)
Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[237.0, 850, 'nm', 5],[247.0, 200, 'W', 5],[275.0, 19, '%', 5],[279.0, 78, 'K', 5],[284.0, 44, '%', 5]

InGaN/GaN
###Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells|Ross Cheriton,Sharif M. Sadaf,Luc Robichaud,Jacob J. Krich,Zetian Mi,Karin Hinzer###
(6754, 6759)
 Here we demonstrate a materialsystem for intermediate band solar cells using InGaN/GaNquantum-dot-in-nanowire heterostructures grown directly on silicon to provide alower cost, large-bandgap intermediate band solar cell platform.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[119.0, 850, 'nm', 2],[129.0, 200, 'W', 2],[157.0, 19, '%', 2],[161.0, 78, 'K', 2],[166.0, 44, '%', 2]

III
###Two-Photon Photocurrent in InGaN/GaN Nanowire Intermediate Band Solar Cells|Ross Cheriton,Sharif M. Sadaf,Luc Robichaud,Jacob J. Krich,Zetian Mi,Karin Hinzer###
(6940, 6942)
 The nanostructuredIII-nitride strategy provides a route towards realistic room temperatureintermediate band solar cells while leveraging the cost benefits of siliconsubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 850, 'nm', 1],[52.0, 200, 'W', 1],[24.0, 19, '%', 1],[20.0, 78, 'K', 1],[15.0, 44, '%', 1]

Si
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7009, 7009)
Carrier loss mechanisms in textured crystalline Si-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 20, '%', 2]

Si
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7060, 7060)
 A quite general device analysis method that allows the direct evaluation ofoptical and recombination losses in crystalline silicon (c<missing VAR>-Si)-based solarcells has been developed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 20, '%', 1]

In
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7130, 7130)
 In the established method, the carrier loss mechanisms arecharacterized from the external quantum efficiency (EQE) analysis with very lowcomputational cost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 20, '%', 1]

In
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7182, 7182)
 In particular, the EQE analyses of textured c<missing VAR>-Si solarcells are implemented by employing the experimental reflectance spectraobtained directly from the actual devices while using flat optical modelswithout any fitting parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 20, '%', 2]

Si
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7201, 7201)
 In particular, the EQE analyses of textured c<missing VAR>-Si solarcells are implemented by employing the experimental reflectance spectraobtained directly from the actual devices while using flat optical modelswithout any fitting parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 20, '%', 2]

Si
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7296, 7296)
 We find that the developed method providesalmost perfect fitting to EQE spectra reported for various textured c<missing VAR>-Si solarcells, including c<missing VAR>-Si heterojunction solar cells, a dopant-free c<missing VAR>-Si solar cellwith a MoOx layer, and an n<missing VAR>-type passivated emitter with rear locally diffused(PERL) solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 20, '%', 3]

Si
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7308, 7308)
 We find that the developed method providesalmost perfect fitting to EQE spectra reported for various textured c<missing VAR>-Si solarcells, including c<missing VAR>-Si heterojunction solar cells, a dopant-free c<missing VAR>-Si solar cellwith a MoOx layer, and an n<missing VAR>-type passivated emitter with rear locally diffused(PERL) solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 20, '%', 3]

Si
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7325, 7325)
 We find that the developed method providesalmost perfect fitting to EQE spectra reported for various textured c<missing VAR>-Si solarcells, including c<missing VAR>-Si heterojunction solar cells, a dopant-free c<missing VAR>-Si solar cellwith a MoOx layer, and an n<missing VAR>-type passivated emitter with rear locally diffused(PERL) solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 20, '%', 3]

Mo
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7336, 7336)
 We find that the developed method providesalmost perfect fitting to EQE spectra reported for various textured c<missing VAR>-Si solarcells, including c<missing VAR>-Si heterojunction solar cells, a dopant-free c<missing VAR>-Si solar cellwith a MoOx layer, and an n<missing VAR>-type passivated emitter with rear locally diffused(PERL) solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 20, '%', 3]

P
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7364, 7364)
 We find that the developed method providesalmost perfect fitting to EQE spectra reported for various textured c<missing VAR>-Si solarcells, including c<missing VAR>-Si heterojunction solar cells, a dopant-free c<missing VAR>-Si solar cellwith a MoOx layer, and an n<missing VAR>-type passivated emitter with rear locally diffused(PERL) solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 20, '%', 3]

Si
###Carrier loss mechanisms in textured crystalline Si-based solar cells|Akihiro Nakane,Shohei Fujimoto,Hiroyuki Fujiwara###
(7462, 7462)
 Based on the EQE analysis results, the carrierloss mechanisms in different types of c<missing VAR>-Si solar cells are discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 20, '%', 5]

I
###Significant efficiency enhancement in thin film solar cells using laser beam-induced graphene transparent conductive electrodes|L. V. Thekkekara,Bouyan Cai###
(8432, 8432)
 With theoptimization of parameters such as thickness, width, and period of fractals, anenhancement of photocurrent generation of solar cells by a factor of 24.5% isachieved compared to reference solar cell with a traditional IT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 24.5, '%', 0]

O
###Significant efficiency enhancement in thin film solar cells using laser beam-induced graphene transparent conductive electrodes|L. V. Thekkekara,Bouyan Cai###
(8434, 8434)
 With theoptimization of parameters such as thickness, width, and period of fractals, anenhancement of photocurrent generation of solar cells by a factor of 24.5% isachieved compared to reference solar cell with a traditional IT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 24.5, '%', 0]

SiH
###The Effects of Geometry on a-Si:H Solar Cell Performance|T. Kirkpatrick,M. J. Burns,M. J. Naughton###
(8457, 8458)
The Effects of Geometry on a-SiH Solar Cell Performance.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3, 'D', 1]

H
###The Effects of Geometry on a-Si:H Solar Cell Performance|T. Kirkpatrick,M. J. Burns,M. J. Naughton###
(8531, 8531)
 The material system considered in thesesimulations is hydrogenated amorphous silicon (a-SiH), with solar cellsfabricated in an n-i-p<missing VAR> stacking architecture.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, 'D', 1]

SiH
###The Effects of Geometry on a-Si:H Solar Cell Performance|T. Kirkpatrick,M. J. Burns,M. J. Naughton###
(8576, 8577)
 Simulations for the performanceof the planar a-SiH device are compared against simulations performed usingSCAPS-1D<missing VAR> and found to be in close agreement.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3, 'D', 2]

SC
###The Effects of Geometry on a-Si:H Solar Cell Performance|T. Kirkpatrick,M. J. Burns,M. J. Naughton###
(8594, 8595)
 Simulations for the performanceof the planar a-SiH device are compared against simulations performed usingSCAPS-1D<missing VAR> and found to be in close agreement.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 3, 'D', 2]

PS
###The Effects of Geometry on a-Si:H Solar Cell Performance|T. Kirkpatrick,M. J. Burns,M. J. Naughton###
(8597, 8598)
 Simulations for the performanceof the planar a-SiH device are compared against simulations performed usingSCAPS-1D<missing VAR> and found to be in close agreement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 3, 'D', 2]

SiH
###The Effects of Geometry on a-Si:H Solar Cell Performance|T. Kirkpatrick,M. J. Burns,M. J. Naughton###
(8721, 8722)
 Simulation results show that while geometricalchanges in the energy band diagram impact charge carrier collection, a-SiHsolar cell performance is most significantly impacted by light absorptionproperties associated with nanoscopic arrays of non-planar structures.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 3, 'D', 5]

SiH
###The Effects of Geometry on a-Si:H Solar Cell Performance|T. Kirkpatrick,M. J. Burns,M. J. Naughton###
(8786, 8787)
 Wecompare our simulations to results of fabricated nanocoaxial a-SiH solar cellsand infer the mechanisms of enhanced absorption observed experimentally in suchsolar cells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 3, 'D', 6]

N
###Plasmonic Metamaterial Perovskite Solar Cells: Fundamental Tradeoffs, Limitations, and Opportunities|Kwangjin Kim,Seungwoo Lee###
(8864, 8864)
 Whether dispersal of plasmonic nanoparticles (NPs) within a perovskite activelayer can increase the efficiency of solar cells is a long-standing question.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Plasmonic Metamaterial Perovskite Solar Cells: Fundamental Tradeoffs, Limitations, and Opportunities|Kwangjin Kim,Seungwoo Lee###
(8921, 8921)
It is well known that inclusion of metallic NPs in an active layer can boostthe surrounding near-field intensity around them owing to the dipolar localizedsurface plasmon resonance (L<missing VAR>SPR<missing VAR>, also called antenna effect), which canincrease light absorption by solar cells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SP
###Plasmonic Metamaterial Perovskite Solar Cells: Fundamental Tradeoffs, Limitations, and Opportunities|Kwangjin Kim,Seungwoo Lee###
(8970, 8971)
It is well known that inclusion of metallic NPs in an active layer can boostthe surrounding near-field intensity around them owing to the dipolar localizedsurface plasmon resonance (L<missing VAR>SPR<missing VAR>, also called antenna effect), which canincrease light absorption by solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Plasmonic Metamaterial Perovskite Solar Cells: Fundamental Tradeoffs, Limitations, and Opportunities|Kwangjin Kim,Seungwoo Lee###
(9014, 9014)
 However, the use of plasmonic NPs inperovskite solar cells has been barely reported, and it is not known whetherinserting plasmonic NPs into a perovskite active layer produces any performanceadvantage compared with a pure perovskite counterpart.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Plasmonic Metamaterial Perovskite Solar Cells: Fundamental Tradeoffs, Limitations, and Opportunities|Kwangjin Kim,Seungwoo Lee###
(9052, 9052)
 However, the use of plasmonic NPs inperovskite solar cells has been barely reported, and it is not known whetherinserting plasmonic NPs into a perovskite active layer produces any performanceadvantage compared with a pure perovskite counterpart.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Plasmonic Metamaterial Perovskite Solar Cells: Fundamental Tradeoffs, Limitations, and Opportunities|Kwangjin Kim,Seungwoo Lee###
(9168, 9168)
 Ourresults indicate that an increase in effective refractive index of perovskitethrough dispersed plasmonic NPs can in principle enhance the performance ofsolar cells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS/CI
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9209, 9213)
Simulation of the Efficiency of CdS/CIG<missing VAR>S Tandem Multi-Junction Solar Cells Using AM<missing VAR>PS-1D<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[159.0, 17.3, '%', 2],[187.0, 200, 'nm', 2],[221.0, 17.1, '%', 3],[236.0, 1, 'micron', 3],[342.0, 48.3, '%', 5],[374.0, 600, 'nm', 5]

S
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9215, 9215)
Simulation of the Efficiency of CdS/CIG<missing VAR>S Tandem Multi-Junction Solar Cells Using AM<missing VAR>PS-1D<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 17.3, '%', 2],[185.0, 200, 'nm', 2],[219.0, 17.1, '%', 3],[234.0, 1, 'micron', 3],[340.0, 48.3, '%', 5],[372.0, 600, 'nm', 5]

PS
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9231, 9232)
Simulation of the Efficiency of CdS/CIG<missing VAR>S Tandem Multi-Junction Solar Cells Using AM<missing VAR>PS-1D<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 17.3, '%', 2],[168.0, 200, 'nm', 2],[202.0, 17.1, '%', 3],[217.0, 1, 'micron', 3],[323.0, 48.3, '%', 5],[355.0, 600, 'nm', 5]

In
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9238, 9238)
 In this paper we conduct numerical simulation of CdS/CIG<missing VAR>S solar cells by useof the AM<missing VAR>PS-1D<missing VAR> software aiming to formulate the optimal design of the newmulti-junction tandem solar cell providing its most efficient operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 17.3, '%', 1],[162.0, 200, 'nm', 1],[196.0, 17.1, '%', 2],[211.0, 1, 'micron', 2],[317.0, 48.3, '%', 4],[349.0, 600, 'nm', 4]

CdS/CI
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9254, 9258)
 In this paper we conduct numerical simulation of CdS/CIG<missing VAR>S solar cells by useof the AM<missing VAR>PS-1D<missing VAR> software aiming to formulate the optimal design of the newmulti-junction tandem solar cell providing its most efficient operation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[114.0, 17.3, '%', 1],[142.0, 200, 'nm', 1],[176.0, 17.1, '%', 2],[191.0, 1, 'micron', 2],[297.0, 48.3, '%', 4],[329.0, 600, 'nm', 4]

S
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9260, 9260)
 In this paper we conduct numerical simulation of CdS/CIG<missing VAR>S solar cells by useof the AM<missing VAR>PS-1D<missing VAR> software aiming to formulate the optimal design of the newmulti-junction tandem solar cell providing its most efficient operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 17.3, '%', 1],[140.0, 200, 'nm', 1],[174.0, 17.1, '%', 2],[189.0, 1, 'micron', 2],[295.0, 48.3, '%', 4],[327.0, 600, 'nm', 4]

PS
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9277, 9278)
 In this paper we conduct numerical simulation of CdS/CIG<missing VAR>S solar cells by useof the AM<missing VAR>PS-1D<missing VAR> software aiming to formulate the optimal design of the newmulti-junction tandem solar cell providing its most efficient operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 17.3, '%', 1],[122.0, 200, 'nm', 1],[156.0, 17.1, '%', 2],[171.0, 1, 'micron', 2],[277.0, 48.3, '%', 4],[309.0, 600, 'nm', 4]

CdS/CI
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9344, 9348)
 Westart with the numerical simulation of single-junction CdS/CIG<missing VAR>S solar cells,which shows that its highest efficiency of 17.3% could be achieved by thethickness of CIG<missing VAR>S p<missing VAR>-layer of 200 nm.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[24.0, 17.3, '%', 0],[52.0, 200, 'nm', 0],[86.0, 17.1, '%', 1],[101.0, 1, 'micron', 1],[207.0, 48.3, '%', 3],[239.0, 600, 'nm', 3]

S
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9350, 9350)
 Westart with the numerical simulation of single-junction CdS/CIG<missing VAR>S solar cells,which shows that its highest efficiency of 17.3% could be achieved by thethickness of CIG<missing VAR>S p<missing VAR>-layer of 200 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 17.3, '%', 0],[50.0, 200, 'nm', 0],[84.0, 17.1, '%', 1],[99.0, 1, 'micron', 1],[205.0, 48.3, '%', 3],[237.0, 600, 'nm', 3]

CI
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9390, 9391)
 Westart with the numerical simulation of single-junction CdS/CIG<missing VAR>S solar cells,which shows that its highest efficiency of 17.3% could be achieved by thethickness of CIG<missing VAR>S p<missing VAR>-layer of 200 nm.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 17.3, '%', 0],[9.0, 200, 'nm', 0],[43.0, 17.1, '%', 1],[58.0, 1, 'micron', 1],[164.0, 48.3, '%', 3],[196.0, 600, 'nm', 3]

S
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9393, 9393)
 Westart with the numerical simulation of single-junction CdS/CIG<missing VAR>S solar cells,which shows that its highest efficiency of 17.3% could be achieved by thethickness of CIG<missing VAR>S p<missing VAR>-layer of 200 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 17.3, '%', 0],[7.0, 200, 'nm', 0],[41.0, 17.1, '%', 1],[56.0, 1, 'micron', 1],[162.0, 48.3, '%', 3],[194.0, 600, 'nm', 3]

CdS/CI
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9510, 9514)
 By use of the results of the numerical simulation of thesingle-junction solar cells we developed the design and conducted optimizationof the new multi-junction tandem CdS/CIG<missing VAR>S solar cell structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[138.0, 17.3, '%', 2],[110.0, 200, 'nm', 2],[76.0, 17.1, '%', 1],[61.0, 1, 'micron', 1],[41.0, 48.3, '%', 1],[73.0, 600, 'nm', 1]

S
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9516, 9516)
 By use of the results of the numerical simulation of thesingle-junction solar cells we developed the design and conducted optimizationof the new multi-junction tandem CdS/CIG<missing VAR>S solar cell structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 17.3, '%', 2],[116.0, 200, 'nm', 2],[82.0, 17.1, '%', 1],[67.0, 1, 'micron', 1],[39.0, 48.3, '%', 1],[71.0, 600, 'nm', 1]

CI
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9577, 9578)
 Numericalsimulation shows that the maximum efficiency of this solar cell is equal to48.3%, which could be obtained with the thickness of the CIG<missing VAR>S p<missing VAR>-layer of 600 nmat a standard illumination of AM<missing VAR> 1.5.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 17.3, '%', 3],[177.0, 200, 'nm', 3],[143.0, 17.1, '%', 2],[128.0, 1, 'micron', 2],[22.0, 48.3, '%', 0],[9.0, 600, 'nm', 0]

S
###Simulation of the Efficiency of CdS/CIGS Tandem Multi-Junction Solar Cells Using AMPS-1D|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(9580, 9580)
 Numericalsimulation shows that the maximum efficiency of this solar cell is equal to48.3%, which could be obtained with the thickness of the CIG<missing VAR>S p<missing VAR>-layer of 600 nmat a standard illumination of AM<missing VAR> 1.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 17.3, '%', 3],[180.0, 200, 'nm', 3],[146.0, 17.1, '%', 2],[131.0, 1, 'micron', 2],[25.0, 48.3, '%', 0],[7.0, 600, 'nm', 0]

II
###Nanocarbon-Based photovoltaics|Marco Bernardi,Jessica Lohrman,Priyank V. Kumar,Alec Kirkeminde,Nicola Ferralis,Jeffrey C. Grossman,Shenqiang Ren###
(10532, 10533)
 The device active layer compositionis optimized using ab-initio density functional theory calculations to predicttype-II band alignment and Schottky barrier formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 1.3, '%', 2],[142.0, 13, '%', 3]

PC70B
###Nanocarbon-Based photovoltaics|Marco Bernardi,Jessica Lohrman,Priyank V. Kumar,Alec Kirkeminde,Nicola Ferralis,Jeffrey C. Grossman,Shenqiang Ren###
(10563, 10566)
 The best devicefabricated is composed of PC70BM<missing VAR> fullerene, semiconducting single-walled carbonnanotubes and reduced graphene oxide.
Featurization terminated normally.
0,0,0,0,0.013888888888888888,0.9722222222222222,0,0,0,0,0,0,0,0,0.013888888888888888,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1.3, '%', 1],[109.0, 13, '%', 2]

In
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(10876, 10876)
 In developing photovoltaic devices with high efficiencies, quantitativedetermination of the carrier loss is crucial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(10909, 10909)
 In conventional solar-cellcharacterization techniques, however, photocurrent reduction originating fromparasitic light absorption and carrier recombination within the light absorbercannot be assessed easily.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(11029, 11029)
 Inthis method, the optical absorption in solar cells is first deduced by imposingthe anti-reflection condition in the calculation of the absorptance spectrum,and the carrier extraction from the light absorber layer is then modeled byconsidering a carrier collection length from the absorber interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnSe4
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(11166, 11171)
 Ouranalysis method is appropriate for a wide variety of photovoltaic devices,including kesterite solar cells [Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4],zincblende CdTe solar cells, and hybrid perovskite (CH3NH3PbI3) solar cells,and provides excellent fitting to numerous EQE spectra reported earlier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(11174, 11179)
 Ouranalysis method is appropriate for a wide variety of photovoltaic devices,including kesterite solar cells [Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4],zincblende CdTe solar cells, and hybrid perovskite (CH3NH3PbI3) solar cells,and provides excellent fitting to numerous EQE spectra reported earlier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(11187, 11187)
 Ouranalysis method is appropriate for a wide variety of photovoltaic devices,including kesterite solar cells [Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4],zincblende CdTe solar cells, and hybrid perovskite (CH3NH3PbI3) solar cells,and provides excellent fitting to numerous EQE spectra reported earlier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(11189, 11189)
 Ouranalysis method is appropriate for a wide variety of photovoltaic devices,including kesterite solar cells [Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4],zincblende CdTe solar cells, and hybrid perovskite (CH3NH3PbI3) solar cells,and provides excellent fitting to numerous EQE spectra reported earlier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(11191, 11191)
 Ouranalysis method is appropriate for a wide variety of photovoltaic devices,including kesterite solar cells [Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4],zincblende CdTe solar cells, and hybrid perovskite (CH3NH3PbI3) solar cells,and provides excellent fitting to numerous EQE spectra reported earlier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(11200, 11201)
 Ouranalysis method is appropriate for a wide variety of photovoltaic devices,including kesterite solar cells [Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4],zincblende CdTe solar cells, and hybrid perovskite (CH3NH3PbI3) solar cells,and provides excellent fitting to numerous EQE spectra reported earlier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CH3NH3PbI3)
###Quantitative determination of optical and recombination losses in thin-film photovoltaic devices based on external quantum efficiency analysis|Akihiro Nakane,Hitoshi Tampo,Masato Tamakoshi,Shohei Fujimoto,Kang Min Kim,Shinho Kim,Hajime Shibata,Shigeru Niki,Hiroyuki Fujiwara###
(11214, 11224)
 Ouranalysis method is appropriate for a wide variety of photovoltaic devices,including kesterite solar cells [Cu2ZnSnSe4, Cu2ZnSnS4, and Cu2ZnSn(S,Se)4],zincblende CdTe solar cells, and hybrid perovskite (CH3NH3PbI3) solar cells,and provides excellent fitting to numerous EQE spectra reported earlier.
Featurization successful!
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(HPGe)
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11338, 11342)
Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[453.0, 45.65, '%', 5],[469.0, 1.16, 'V', 5],[487.0, 1.7, 'V', 5]

In
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11355, 11355)
 In spite of having higher carrier mobilities and absorption coefficients ofgermanium (Ge) than those of silicon (Si), there has been less focus onGe-based solar cells due to the low bandgap and high-cost of Ge wafer as wellas requirement of its high-purity level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[440.0, 45.65, '%', 4],[456.0, 1.16, 'V', 4],[474.0, 1.7, 'V', 4]

(Ge)
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11380, 11382)
 In spite of having higher carrier mobilities and absorption coefficients ofgermanium (Ge) than those of silicon (Si), there has been less focus onGe-based solar cells due to the low bandgap and high-cost of Ge wafer as wellas requirement of its high-purity level.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[413.0, 45.65, '%', 4],[429.0, 1.16, 'V', 4],[447.0, 1.7, 'V', 4]

(Si)
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11392, 11394)
 In spite of having higher carrier mobilities and absorption coefficients ofgermanium (Ge) than those of silicon (Si), there has been less focus onGe-based solar cells due to the low bandgap and high-cost of Ge wafer as wellas requirement of its high-purity level.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[401.0, 45.65, '%', 4],[417.0, 1.16, 'V', 4],[435.0, 1.7, 'V', 4]

Ge
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11410, 11410)
 In spite of having higher carrier mobilities and absorption coefficients ofgermanium (Ge) than those of silicon (Si), there has been less focus onGe-based solar cells due to the low bandgap and high-cost of Ge wafer as wellas requirement of its high-purity level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 45.65, '%', 4],[401.0, 1.16, 'V', 4],[419.0, 1.7, 'V', 4]

Ge
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11436, 11436)
 In spite of having higher carrier mobilities and absorption coefficients ofgermanium (Ge) than those of silicon (Si), there has been less focus onGe-based solar cells due to the low bandgap and high-cost of Ge wafer as wellas requirement of its high-purity level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 45.65, '%', 4],[375.0, 1.16, 'V', 4],[393.0, 1.7, 'V', 4]

Ge
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11472, 11472)
 Currently, availability of high-purityGe (HPGe), the low-cost wafer slicing method and proper design guidelines makeit possible to design HPGe-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 45.65, '%', 3],[339.0, 1.16, 'V', 3],[357.0, 1.7, 'V', 3]

(HPGe)
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11474, 11478)
 Currently, availability of high-purityGe (HPGe), the low-cost wafer slicing method and proper design guidelines makeit possible to design HPGe-based solar cells.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 45.65, '%', 3],[333.0, 1.16, 'V', 3],[351.0, 1.7, 'V', 3]

HPGe
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11512, 11514)
 Currently, availability of high-purityGe (HPGe), the low-cost wafer slicing method and proper design guidelines makeit possible to design HPGe-based solar cells.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 45.65, '%', 3],[297.0, 1.16, 'V', 3],[315.0, 1.7, 'V', 3]

CdS
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11550, 11551)
 Accordingly, in this article, wehave designed and simulated a novel n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 based npp+double-heterojunction solar cell, where HPGe, cadmium sulfide (CdS) andorthorhombic barium disilicide (beta-BaSi2) have been used as the absorber,window and back-surface field (BSF) layers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 45.65, '%', 2],[260.0, 1.16, 'V', 2],[278.0, 1.7, 'V', 2]

HPGe
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11555, 11557)
 Accordingly, in this article, wehave designed and simulated a novel n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 based npp+double-heterojunction solar cell, where HPGe, cadmium sulfide (CdS) andorthorhombic barium disilicide (beta-BaSi2) have been used as the absorber,window and back-surface field (BSF) layers, respectively.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 45.65, '%', 2],[254.0, 1.16, 'V', 2],[272.0, 1.7, 'V', 2]

BaSi2
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11562, 11564)
 Accordingly, in this article, wehave designed and simulated a novel n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 based npp+double-heterojunction solar cell, where HPGe, cadmium sulfide (CdS) andorthorhombic barium disilicide (beta-BaSi2) have been used as the absorber,window and back-surface field (BSF) layers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 45.65, '%', 2],[247.0, 1.16, 'V', 2],[265.0, 1.7, 'V', 2]

HPGe
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11583, 11585)
 Accordingly, in this article, wehave designed and simulated a novel n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 based npp+double-heterojunction solar cell, where HPGe, cadmium sulfide (CdS) andorthorhombic barium disilicide (beta-BaSi2) have been used as the absorber,window and back-surface field (BSF) layers, respectively.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 45.65, '%', 2],[226.0, 1.16, 'V', 2],[244.0, 1.7, 'V', 2]

(CdS)
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11592, 11595)
 Accordingly, in this article, wehave designed and simulated a novel n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 based npp+double-heterojunction solar cell, where HPGe, cadmium sulfide (CdS) andorthorhombic barium disilicide (beta-BaSi2) have been used as the absorber,window and back-surface field (BSF) layers, respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 45.65, '%', 2],[216.0, 1.16, 'V', 2],[234.0, 1.7, 'V', 2]

Si2
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11610, 11611)
 Accordingly, in this article, wehave designed and simulated a novel n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 based npp+double-heterojunction solar cell, where HPGe, cadmium sulfide (CdS) andorthorhombic barium disilicide (beta-BaSi2) have been used as the absorber,window and back-surface field (BSF) layers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 45.65, '%', 2],[200.0, 1.16, 'V', 2],[218.0, 1.7, 'V', 2]

(BSF)
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11638, 11642)
 Accordingly, in this article, wehave designed and simulated a novel n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 based npp+double-heterojunction solar cell, where HPGe, cadmium sulfide (CdS) andorthorhombic barium disilicide (beta-BaSi2) have been used as the absorber,window and back-surface field (BSF) layers, respectively.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 45.65, '%', 2],[169.0, 1.16, 'V', 2],[187.0, 1.7, 'V', 2]

SC
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11664, 11665)
 Using the solar cellcapacitance simulator (SCAPS-1D), the effects of different physical parameterssuch as the thickness, doping and defect densities, band offsets andtemperature on the photovoltaic (PV) parameters of the designed solar cellshave been investigated systematically.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 45.65, '%', 1],[146.0, 1.16, 'V', 1],[164.0, 1.7, 'V', 1]

PS
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11667, 11668)
 Using the solar cellcapacitance simulator (SCAPS-1D), the effects of different physical parameterssuch as the thickness, doping and defect densities, band offsets andtemperature on the photovoltaic (PV) parameters of the designed solar cellshave been investigated systematically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 45.65, '%', 1],[143.0, 1.16, 'V', 1],[161.0, 1.7, 'V', 1]

(PV)
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11721, 11724)
 Using the solar cellcapacitance simulator (SCAPS-1D), the effects of different physical parameterssuch as the thickness, doping and defect densities, band offsets andtemperature on the photovoltaic (PV) parameters of the designed solar cellshave been investigated systematically.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 45.65, '%', 1],[87.0, 1.16, 'V', 1],[105.0, 1.7, 'V', 1]

PV
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11758, 11759)
 This article renders the optimized PVparameters to improve the device performance with the highest power conversionefficiency (PCE) of 45.65% with a high open-circuit voltage of 1.16 V owing tothe high built-in voltage of 1.7 V for the n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 45.65, '%', 0],[52.0, 1.16, 'V', 0],[70.0, 1.7, 'V', 0]

PC
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11788, 11789)
 This article renders the optimized PVparameters to improve the device performance with the highest power conversionefficiency (PCE) of 45.65% with a high open-circuit voltage of 1.16 V owing tothe high built-in voltage of 1.7 V for the n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 45.65, '%', 0],[22.0, 1.16, 'V', 0],[40.0, 1.7, 'V', 0]

CdS
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11837, 11838)
 This article renders the optimized PVparameters to improve the device performance with the highest power conversionefficiency (PCE) of 45.65% with a high open-circuit voltage of 1.16 V owing tothe high built-in voltage of 1.7 V for the n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 45.65, '%', 0],[26.0, 1.16, 'V', 0],[8.0, 1.7, 'V', 0]

HPGe
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11842, 11844)
 This article renders the optimized PVparameters to improve the device performance with the highest power conversionefficiency (PCE) of 45.65% with a high open-circuit voltage of 1.16 V owing tothe high built-in voltage of 1.7 V for the n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 solar cells.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 45.65, '%', 0],[31.0, 1.16, 'V', 0],[13.0, 1.7, 'V', 0]

BaSi2
###Design guidelines for a highly efficient high-purity Germanium (HPGe)-based double-heterojunction solar cell|Jaker Hossain,Md. Mahabub Alam Moon,Bipanko Kumar Mondal,Mohammad Abdul Halim###
(11849, 11851)
 This article renders the optimized PVparameters to improve the device performance with the highest power conversionefficiency (PCE) of 45.65% with a high open-circuit voltage of 1.16 V owing tothe high built-in voltage of 1.7 V for the n<missing VAR>-CdS/p<missing VAR>-HPGe/p+-BaSi2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 45.65, '%', 0],[38.0, 1.16, 'V', 0],[20.0, 1.7, 'V', 0]

ZnO
###Modeling of heterojunction photovoltaic cells based on ZnO nanowires array and earth-abundant cuprous oxide absorbers|Qilin Gu###
(11913, 11914)
Modeling of heterojunction photovoltaic cells based on ZnO nanowires array and earth-abundant cuprous oxide absorbers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 19.7, '%', 3],[227.0, 22, '%', 4],[232.0, 12, '%', 4]

As
###Modeling of heterojunction photovoltaic cells based on ZnO nanowires array and earth-abundant cuprous oxide absorbers|Qilin Gu###
(11933, 11933)
 As a potential solution for low-cost efficient solar cells, radial junctionsconsisting of ZnO nanowires arrays embedded in Cu2O thin films have beentheoretically modeled.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 19.7, '%', 2],[208.0, 22, '%', 3],[213.0, 12, '%', 3]

ZnO
###Modeling of heterojunction photovoltaic cells based on ZnO nanowires array and earth-abundant cuprous oxide absorbers|Qilin Gu###
(11963, 11964)
 As a potential solution for low-cost efficient solar cells, radial junctionsconsisting of ZnO nanowires arrays embedded in Cu2O thin films have beentheoretically modeled.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 19.7, '%', 2],[177.0, 22, '%', 3],[182.0, 12, '%', 3]

Cu2O
###Modeling of heterojunction photovoltaic cells based on ZnO nanowires array and earth-abundant cuprous oxide absorbers|Qilin Gu###
(11974, 11976)
 As a potential solution for low-cost efficient solar cells, radial junctionsconsisting of ZnO nanowires arrays embedded in Cu2O thin films have beentheoretically modeled.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 19.7, '%', 2],[165.0, 22, '%', 3],[170.0, 12, '%', 3]

Cu2O/ZnO
###Modeling of heterojunction photovoltaic cells based on ZnO nanowires array and earth-abundant cuprous oxide absorbers|Qilin Gu###
(12211, 12216)
 The findings suggestthat rational device design plays a crucial role in implementing efficientCu2O/ZnO wire radial junction solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[152.0, 19.7, '%', 2],[70.0, 22, '%', 1],[65.0, 12, '%', 1]

C
###Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications|Antonio Martí,Pablo García-Linares,Marius Zehender,Simon A. Svatek,Irene Artacho,Ana Belén Cristóbal,José R. González,Carsten Baur,Iñigo Ramiro,Federica Cappelluti,Elisa Antolín###
(12280, 12280)
 Multi-terminal multi-junction solar cells (MJSC) offer higher efficiencypotential than series connected (two-terminal) ones.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications|Antonio Martí,Pablo García-Linares,Marius Zehender,Simon A. Svatek,Irene Artacho,Ana Belén Cristóbal,José R. González,Carsten Baur,Iñigo Ramiro,Federica Cappelluti,Elisa Antolín###
(12307, 12307)
 In addition, forterrestrial applications, the efficiency of multi-terminal solar cells is lesssensitive to solar spectral variations than the two-terminal series-connectedone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications|Antonio Martí,Pablo García-Linares,Marius Zehender,Simon A. Svatek,Irene Artacho,Ana Belén Cristóbal,José R. González,Carsten Baur,Iñigo Ramiro,Federica Cappelluti,Elisa Antolín###
(12365, 12365)
 In space, generally, cells are always illuminated with AM<missing VAR>0 spectrum and noimpact is expected from spectral variations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications|Antonio Martí,Pablo García-Linares,Marius Zehender,Simon A. Svatek,Irene Artacho,Ana Belén Cristóbal,José R. González,Carsten Baur,Iñigo Ramiro,Federica Cappelluti,Elisa Antolín###
(12471, 12471)
 In this work we review the potential of multi-terminal solar cellsfor achieving extended EOL efficiencies with emphasis in the potential of thethree-terminal heterojunction bipolar transistor solar cell, a novelmulti-terminal MJSC architecture with a simplified structure not requiring, forexample, tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications|Antonio Martí,Pablo García-Linares,Marius Zehender,Simon A. Svatek,Irene Artacho,Ana Belén Cristóbal,José R. González,Carsten Baur,Iñigo Ramiro,Federica Cappelluti,Elisa Antolín###
(12549, 12550)
 In this work we review the potential of multi-terminal solar cellsfor achieving extended EOL efficiencies with emphasis in the potential of thethree-terminal heterojunction bipolar transistor solar cell, a novelmulti-terminal MJSC architecture with a simplified structure not requiring, forexample, tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Direct measurements of band gap grading in polycrystalline CIGS solar cells|M. P. Heinrich,Z-H. Zhang,Y. Zhang,O. Kiowski,M. Powalla,U. Lemmer,A. Slobodskyy###
(12602, 12603)
Direct measurements of band gap grading in polycrystalline CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Direct measurements of band gap grading in polycrystalline CIGS solar cells|M. P. Heinrich,Z-H. Zhang,Y. Zhang,O. Kiowski,M. Powalla,U. Lemmer,A. Slobodskyy###
(12605, 12605)
Direct measurements of band gap grading in polycrystalline CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Direct measurements of band gap grading in polycrystalline CIGS solar cells|M. P. Heinrich,Z-H. Zhang,Y. Zhang,O. Kiowski,M. Powalla,U. Lemmer,A. Slobodskyy###
(12642, 12642)
 We present direct measurements of depth-resolved band gap variations ofCuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se2
###Direct measurements of band gap grading in polycrystalline CIGS solar cells|M. P. Heinrich,Z-H. Zhang,Y. Zhang,O. Kiowski,M. Powalla,U. Lemmer,A. Slobodskyy###
(12646, 12647)
 We present direct measurements of depth-resolved band gap variations ofCuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(I)
###Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide copper|Edward Rówiński,Mateusz Pławecki###
(12839, 12841)
Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide copper.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(I)
###Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide copper|Edward Rówiński,Mateusz Pławecki###
(12850, 12852)
 Cuprous (I) oxide (Cu2O) based solar cells were fabricated with the use ofthe electrodeposition technique at nanometre scale, and the structural,morphological and electrical properties were investigated.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Cu2O)
###Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide copper|Edward Rówiński,Mateusz Pławecki###
(12856, 12860)
 Cuprous (I) oxide (Cu2O) based solar cells were fabricated with the use ofthe electrodeposition technique at nanometre scale, and the structural,morphological and electrical properties were investigated.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2O
###Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide copper|Edward Rówiński,Mateusz Pławecki###
(12917, 12919)
 The Cu2O layerswere electrodeposited on crystalline and polycrystalline copper substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2O/Cu
###Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide copper|Edward Rówiński,Mateusz Pławecki###
(12959, 12963)
 Tocomplete the Cu2O/Cu(100) and Cu2O/Cu interfaces as the solar cells thetop electrodes of silver paste were painted on the rear of Cu2O.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu2O
###Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide copper|Edward Rówiński,Mateusz Pławecki###
(13000, 13002)
 Tocomplete the Cu2O/Cu(100) and Cu2O/Cu interfaces as the solar cells thetop electrodes of silver paste were painted on the rear of Cu2O.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag/Cu2O
###Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide copper|Edward Rówiński,Mateusz Pławecki###
(13056, 13060)
 Thetheoretical analysis of the current voltage curve was provided to determine thevalues of electrical parameters of the most efficient solar cell ofAg/Cu2O/Cu(100) and clearly indicate presence of two Schottky barriers atinterfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si
###Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman###
(13945, 13945)
 However, Si-based multi-junction architectures arehindered by incomplete harvesting in the near-infrared (near-IR) spectralrange, as Si sub-cells have weak absorption close to the band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 0, 'th', 3],[404.0, 0.9, '%', 5]

I
###Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman###
(13977, 13977)
 However, Si-based multi-junction architectures arehindered by incomplete harvesting in the near-infrared (near-IR) spectralrange, as Si sub-cells have weak absorption close to the band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0, 'th', 3],[372.0, 0.9, '%', 5]

Si
###Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman###
(13989, 13989)
 However, Si-based multi-junction architectures arehindered by incomplete harvesting in the near-infrared (near-IR) spectralrange, as Si sub-cells have weak absorption close to the band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 0, 'th', 3],[360.0, 0.9, '%', 5]

I
###Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman###
(14067, 14067)
 Here, weintroduce an integrated near-field/far-field light trapping scheme to enhancethe efficiency of silicon-based multi-junction solar cells in the near-IR<missing VAR>range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0, 'th', 2],[282.0, 0.9, '%', 4]

Si
###Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman###
(14212, 14212)
 Numericaland experimental assessment of the optimal design on the performance ofsingle-junction Si T<missing VAR>OPCon solar cells highlights an improved external quantumefficiency (EQE) over a planar back-reflector (+1.52 m<missing VAR>A/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0, 'th', 1],[137.0, 0.9, '%', 1]

OP
###Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman###
(14215, 14216)
 Numericaland experimental assessment of the optimal design on the performance ofsingle-junction Si T<missing VAR>OPCon solar cells highlights an improved external quantumefficiency (EQE) over a planar back-reflector (+1.52 m<missing VAR>A/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0, 'th', 1],[133.0, 0.9, '%', 1]

GaInP/GaInAsP
###Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman###
(14279, 14286)
 Nanopatternedmetagrating back-reflectors are fabricated on GaInP/GaInAsP//Si two-terminaltriple-junction solar cells via Substrate Conformal Imprint Lithography (SCIL)and characterized optically and electronically, demonstrating a powerconversion efficiency improvement of +0.9%abs over the planar reference.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[135.0, 0, 'th', 2],[63.0, 0.9, '%', 0]

Si
###Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman###
(14289, 14289)
 Nanopatternedmetagrating back-reflectors are fabricated on GaInP/GaInAsP//Si two-terminaltriple-junction solar cells via Substrate Conformal Imprint Lithography (SCIL)and characterized optically and electronically, demonstrating a powerconversion efficiency improvement of +0.9%abs over the planar reference.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0, 'th', 2],[60.0, 0.9, '%', 0]

SCI
###Nano-patterned back-reflector with engineered near-field/far-field light scattering for enhanced light trapping in silicon-based multi-junction solar cells|Andrea Cordaro,Ralph Müller,Stefan Tabernig,Nico Tucher,Patrick Schygulla,Oliver Höhn,Benedikt Bläsi,Albert Polman###
(14315, 14317)
 Nanopatternedmetagrating back-reflectors are fabricated on GaInP/GaInAsP//Si two-terminaltriple-junction solar cells via Substrate Conformal Imprint Lithography (SCIL)and characterized optically and electronically, demonstrating a powerconversion efficiency improvement of +0.9%abs over the planar reference.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0, 'th', 2],[32.0, 0.9, '%', 0]

In
###New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells|DongLin Wang,Gang Su###
(14520, 14520)
In most schemes, the textured active layers are involved into light trappingstructures that can provide perfect optical benefits but also bring undesirabledegradation of electrical performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 350, 'nm', 4]

In
###New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells|DongLin Wang,Gang Su###
(14608, 14608)
 In our strategy, a flat activelayer is adopted for avoiding electrical degradation, and an optimizationalgorithm is applied to seek for an optimized light trapping structure for thebest optical benefit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 350, 'nm', 2]

As
###New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells|DongLin Wang,Gang Su###
(14678, 14678)
 As an example, we show that the efficiency of a flata-SiH thin-film solar cell can be promoted close to the certified highestvalue.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 350, 'nm', 1]

SiH
###New strategy to promote conversion efficiency using high-index nanostructures in thin-film solar cells|DongLin Wang,Gang Su###
(14704, 14705)
 As an example, we show that the efficiency of a flata-SiH thin-film solar cell can be promoted close to the certified highestvalue.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 350, 'nm', 1]

GaAs
###Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich###
(14826, 14827)
Optimizations of GaAs Nanowire Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 3.5, 'um', 5],[314.0, 19, '%', 5]

GaAs
###Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich###
(14842, 14843)
 The efficiency of GaAs nanowire solar cells can be significantly improvedwithout any new processing steps or material requirements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 3.5, 'um', 4],[298.0, 19, '%', 4]

GaAs
###Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich###
(14892, 14893)
 We report coupledoptoelectronic simulations of a GaAs nanowire (NW) solar cell with verticalp-i-n<missing VAR> junction and high band gap AlInP passivating shell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 3.5, 'um', 3],[248.0, 19, '%', 3]

(NW)
###Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich###
(14897, 14900)
 We report coupledoptoelectronic simulations of a GaAs nanowire (NW) solar cell with verticalp-i-n<missing VAR> junction and high band gap AlInP passivating shell.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 3.5, 'um', 3],[241.0, 19, '%', 3]

AlInP
###Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich###
(14927, 14929)
 We report coupledoptoelectronic simulations of a GaAs nanowire (NW) solar cell with verticalp-i-n<missing VAR> junction and high band gap AlInP passivating shell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 3.5, 'um', 3],[212.0, 19, '%', 3]

NW
###Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich###
(14966, 14967)
 Ourfrequency-dependent model facilitates calculation of quantum efficiency for thefirst time in NW solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 3.5, 'um', 2],[174.0, 19, '%', 2]

N
###Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich###
(14978, 14978)
 For passivated NWs, we find that short-wavelengthphotons can be most effectively harnessed by using a thin emitter whilelong-wavelength photons are best utilized by extending the intrinsic region tothe nanowire/substrate interface, and using the substrate as a base.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 3.5, 'um', 1],[163.0, 19, '%', 1]

NW
###Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich###
(15089, 15090)
 These twoeasily implemented changes, coupled with the increase of NW height to 3.5 umwith realistic surface recombination in the presence of a passivation shell,result in a NW solar cell with greater than 19% efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3.5, 'um', 0],[51.0, 19, '%', 0]

NW
###Optimizations of GaAs Nanowire Solar Cells|Anna H. Trojnar,Christopher E. Valdivia,Ray R. LaPierre,Karin Hinzer,Jacob J. Krich###
(15128, 15129)
 These twoeasily implemented changes, coupled with the increase of NW height to 3.5 umwith realistic surface recombination in the presence of a passivation shell,result in a NW solar cell with greater than 19% efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3.5, 'um', 0],[12.0, 19, '%', 0]

InGaN
###Numerical simulation of InGaN Schottky solar cell|Sidi Ould Saad Hamady,Adaine Abdoulwahab,Nicolas Fressengeas###
(15161, 15163)
Numerical simulation of InGaN Schottky solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 18.2, '%', 6]

(InGaN)
###Numerical simulation of InGaN Schottky solar cell|Sidi Ould Saad Hamady,Adaine Abdoulwahab,Nicolas Fressengeas###
(15180, 15184)
 The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has thepotentiality to allow achieving high efficiency solar cells through the tuningof its band gap by changing the Indium composition.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 18.2, '%', 5]

III
###Numerical simulation of InGaN Schottky solar cell|Sidi Ould Saad Hamady,Adaine Abdoulwahab,Nicolas Fressengeas###
(15186, 15188)
 The Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has thepotentiality to allow achieving high efficiency solar cells through the tuningof its band gap by changing the Indium composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 18.2, '%', 5]

InGaN
###Numerical simulation of InGaN Schottky solar cell|Sidi Ould Saad Hamady,Adaine Abdoulwahab,Nicolas Fressengeas###
(15306, 15308)
However, the maindrawback of InGaN is linked to its p<missing VAR>-type doping, which is difficult to grow ingood quality and on which ohmic contacts are difficult to realize.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 18.2, '%', 3]

InGaN
###Numerical simulation of InGaN Schottky solar cell|Sidi Ould Saad Hamady,Adaine Abdoulwahab,Nicolas Fressengeas###
(15392, 15394)
 The Schottkysolar cell is a good alternative to avoid the p<missing VAR>-type doping of InGaN.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 18.2, '%', 2]

In
###Numerical simulation of InGaN Schottky solar cell|Sidi Ould Saad Hamady,Adaine Abdoulwahab,Nicolas Fressengeas###
(15397, 15397)
 In thisreport, a comprehensive numerical simulation, using mathematically rigorousoptimization approach based on state-of-the-art optimization algorithms, isused to find the optimum geometrical and physical parameters that yield thebest efficiency of a Schottky solar cell within the achievable devicefabrication range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 18.2, '%', 1]

InGaN
###Numerical simulation of InGaN Schottky solar cell|Sidi Ould Saad Hamady,Adaine Abdoulwahab,Nicolas Fressengeas###
(15515, 15517)
 A 18.2% efficiency is predicted for this new InGaN solarcell design.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 18.2, '%', 0]

(IBSC)
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15574, 15579)
 The intermediate band solar cell (IBSC) and quantum ratchet solar cell (QRSC)have the potential to surpass the efficiency of standard single-junction solarcells by allowing sub-gap photon absorption through states deep inside the bandgap.
Featurization successful!
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15595, 15595)
 The intermediate band solar cell (IBSC) and quantum ratchet solar cell (QRSC)have the potential to surpass the efficiency of standard single-junction solarcells by allowing sub-gap photon absorption through states deep inside the bandgap.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IBSC
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15658, 15661)
 High efficiency IBSC and QRSC devices have not yet been achieved, however,since introducing mid-gap states also increases recombination, which can harmthe device.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15667, 15668)
 High efficiency IBSC and QRSC devices have not yet been achieved, however,since introducing mid-gap states also increases recombination, which can harmthe device.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15732, 15732)
 We consider the electronically coupled upconverter (E<missing VAR>CUC) solarcell and show that it can achieve the same efficiencies as the QRSC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15764, 15765)
 We consider the electronically coupled upconverter (E<missing VAR>CUC) solarcell and show that it can achieve the same efficiencies as the QRSC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CUC
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15791, 15793)
 Althoughthey are equivalent in the detailed balance limit, the E<missing VAR>CUC is less sensitiveto nonradiative processes, which makes it a more practical implementation forIB devices.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IB
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15826, 15827)
 Althoughthey are equivalent in the detailed balance limit, the E<missing VAR>CUC is less sensitiveto nonradiative processes, which makes it a more practical implementation forIB devices.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CUC
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15851, 15853)
 We perform a case study of crystalline-silicon based E<missing VAR>CUC cells,focusing on hydrogenated amorphous silicon as the upconverter material andhighlighting potential dopants for the E<missing VAR>CUC.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CUC
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15891, 15893)
 We perform a case study of crystalline-silicon based E<missing VAR>CUC cells,focusing on hydrogenated amorphous silicon as the upconverter material andhighlighting potential dopants for the E<missing VAR>CUC.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IB
###Efficiency limits of electronically-coupled upconverter and quantum ratchet solar cells using detailed balance|Emily Z. Zhang,Jacob J. Krich###
(15917, 15918)
 These results illustrate a newpath for the development of IB-based devices.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###High current, high efficiency graded band gap perovskite solar cells|Onur Ergen,S. Matt Gilbert,Thang Pham,Sally J. Turner,Mark Tian Zhi Tan,Marcus A. Worsley,Alex Zettl###
(16020, 16021)
 Their high lightabsorption coefficients and long diffusion lengths suggest high powerconversion efficiencies (PCE),1-5 and indeed perovskite-based single band gapand tandem solar cell designs have yielded impressive performances.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 18.4, '%', 2],[142.0, 21.7, '%', 2],[178.0, 75, '%', 3],[197.0, 42.1, 'mA', 3]

In
###High current, high efficiency graded band gap perovskite solar cells|Onur Ergen,S. Matt Gilbert,Thang Pham,Sally J. Turner,Mark Tian Zhi Tan,Marcus A. Worsley,Alex Zettl###
(16114, 16114)
 In this study, wedemonstrate graded band gap perovskite solar cells with steady-state conversionefficiencies averaging 18.4%, with a best of 21.7%, all without reflectivecoatings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 18.4, '%', 0],[49.0, 21.7, '%', 0],[85.0, 75, '%', 1],[104.0, 42.1, 'mA', 1]

SnI3
###High current, high efficiency graded band gap perovskite solar cells|Onur Ergen,S. Matt Gilbert,Thang Pham,Sally J. Turner,Mark Tian Zhi Tan,Marcus A. Worsley,Alex Zettl###
(16255, 16257)
 These cells, whichare based on a novel architecture of two perovskite layers (M<missing VAR>ASnI3 andM<missing VAR>APbI3-xBrx), incorporating GaN, monolayer hexagonal boron nitride, andgraphene aerogel, display the highest efficiency ever reported for perovskitesolar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 18.4, '%', 2],[92.0, 21.7, '%', 2],[56.0, 75, '%', 1],[37.0, 42.1, 'mA', 1]

PbI3-x
###High current, high efficiency graded band gap perovskite solar cells|Onur Ergen,S. Matt Gilbert,Thang Pham,Sally J. Turner,Mark Tian Zhi Tan,Marcus A. Worsley,Alex Zettl###
(16264, 16268)
 These cells, whichare based on a novel architecture of two perovskite layers (M<missing VAR>ASnI3 andM<missing VAR>APbI3-xBrx), incorporating GaN, monolayer hexagonal boron nitride, andgraphene aerogel, display the highest efficiency ever reported for perovskitesolar cells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[113.0, 18.4, '%', 2],[101.0, 21.7, '%', 2],[65.0, 75, '%', 1],[46.0, 42.1, 'mA', 1]

GaN
###High current, high efficiency graded band gap perovskite solar cells|Onur Ergen,S. Matt Gilbert,Thang Pham,Sally J. Turner,Mark Tian Zhi Tan,Marcus A. Worsley,Alex Zettl###
(16275, 16276)
 These cells, whichare based on a novel architecture of two perovskite layers (M<missing VAR>ASnI3 andM<missing VAR>APbI3-xBrx), incorporating GaN, monolayer hexagonal boron nitride, andgraphene aerogel, display the highest efficiency ever reported for perovskitesolar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 18.4, '%', 2],[112.0, 21.7, '%', 2],[76.0, 75, '%', 1],[57.0, 42.1, 'mA', 1]

In
###Pinhole induced efficiency variation in perovskite solar cells|Sumanshu Agarwal,Pradeep R. Nair###
(16388, 16388)
 In thismanuscript, we address the effect of pinholes or process induced surfacecoverage aspects on the efficiency of such solar cells through detailednumerical simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IV
###Pinhole induced efficiency variation in perovskite solar cells|Sumanshu Agarwal,Pradeep R. Nair###
(16621, 16622)
 Additionally, wepropose a simple technique based on terminal IV characteristics to estimate thesurface coverage in perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xAs
###Efficiency Limit Of AlxGa1-xAs Solar Cell Modified By AlyGa1-ySb Quantum Dot Intermediate Band Embedded Outside Of The Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari,A. Bhouri,Y. Cuminal,P. Christol###
(16661, 16665)
Efficiency Limit Of AlxGa1-xAs Solar Cell Modified By AlyGa1-ySb Quantum Dot Intermediate Band Embedded Outside Of The Depletion Region.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Ga1-ySb
###Efficiency Limit Of AlxGa1-xAs Solar Cell Modified By AlyGa1-ySb Quantum Dot Intermediate Band Embedded Outside Of The Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari,A. Bhouri,Y. Cuminal,P. Christol###
(16676, 16680)
Efficiency Limit Of AlxGa1-xAs Solar Cell Modified By AlyGa1-ySb Quantum Dot Intermediate Band Embedded Outside Of The Depletion Region.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Ds
###Efficiency Limit Of AlxGa1-xAs Solar Cell Modified By AlyGa1-ySb Quantum Dot Intermediate Band Embedded Outside Of The Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari,A. Bhouri,Y. Cuminal,P. Christol###
(16713, 16713)
 Recombination through quantum dots (Q<missing VAR>Ds) is a major factor that limitsefficiency of QD intermediate-band (IB) solar cells.
EXCEPTION 3: IndexError for Ds
(IB)
Abstract does not contain any numbers.

CsPbBrI2
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17334, 17338)
High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 676, 'nm', 3],[215.0, 65, '%', 3],[281.0, 5.3, '%', 5],[300.0, 1.31, 'V', 5],[329.0, 2, 'eV', 5]

(NCs)
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17363, 17366)
 Lead halide perovskite nanocrystals (NCs) are currently emerging as one ofthe most interesting solution processed semiconductors since they possess highphotoluminescence quantum yield (PLQY), and colour tunability through anionexchange reactions or quantum confinement.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 676, 'nm', 2],[187.0, 65, '%', 2],[253.0, 5.3, '%', 4],[272.0, 1.31, 'V', 4],[301.0, 2, 'eV', 4]

P
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17409, 17409)
 Lead halide perovskite nanocrystals (NCs) are currently emerging as one ofthe most interesting solution processed semiconductors since they possess highphotoluminescence quantum yield (PLQY), and colour tunability through anionexchange reactions or quantum confinement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 676, 'nm', 2],[144.0, 65, '%', 2],[210.0, 5.3, '%', 4],[229.0, 1.31, 'V', 4],[258.0, 2, 'eV', 4]

Y
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17412, 17412)
 Lead halide perovskite nanocrystals (NCs) are currently emerging as one ofthe most interesting solution processed semiconductors since they possess highphotoluminescence quantum yield (PLQY), and colour tunability through anionexchange reactions or quantum confinement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 676, 'nm', 2],[141.0, 65, '%', 2],[207.0, 5.3, '%', 4],[226.0, 1.31, 'V', 4],[255.0, 2, 'eV', 4]

(CsPbBrI2)
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17460, 17466)
 Here, we show efficient solar cellsbased on mixed halide (CsPbBrI2) NCs obtained via anion exchange reactions inambient conditions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 676, 'nm', 1],[87.0, 65, '%', 1],[153.0, 5.3, '%', 3],[172.0, 1.31, 'V', 3],[201.0, 2, 'eV', 3]

NCs
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17468, 17469)
 Here, we show efficient solar cellsbased on mixed halide (CsPbBrI2) NCs obtained via anion exchange reactions inambient conditions.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 676, 'nm', 1],[84.0, 65, '%', 1],[150.0, 5.3, '%', 3],[169.0, 1.31, 'V', 3],[198.0, 2, 'eV', 3]

NC
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17503, 17504)
 We performed anion exchange reactions in concentrated NCsolutions with I-, thus inducing a PL<missing VAR> red-shift up to 676 nm, and obtaining ahigh PLQY in film (65%).
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 676, 'nm', 0],[49.0, 65, '%', 0],[115.0, 5.3, '%', 2],[134.0, 1.31, 'V', 2],[163.0, 2, 'eV', 2]

I
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17511, 17511)
 We performed anion exchange reactions in concentrated NCsolutions with I-, thus inducing a PL<missing VAR> red-shift up to 676 nm, and obtaining ahigh PLQY in film (65%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 676, 'nm', 0],[42.0, 65, '%', 0],[108.0, 5.3, '%', 2],[127.0, 1.31, 'V', 2],[156.0, 2, 'eV', 2]

P
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17521, 17521)
 We performed anion exchange reactions in concentrated NCsolutions with I-, thus inducing a PL<missing VAR> red-shift up to 676 nm, and obtaining ahigh PLQY in film (65%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 676, 'nm', 0],[32.0, 65, '%', 0],[98.0, 5.3, '%', 2],[117.0, 1.31, 'V', 2],[146.0, 2, 'eV', 2]

P
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17543, 17543)
 We performed anion exchange reactions in concentrated NCsolutions with I-, thus inducing a PL<missing VAR> red-shift up to 676 nm, and obtaining ahigh PLQY in film (65%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 676, 'nm', 0],[10.0, 65, '%', 0],[76.0, 5.3, '%', 2],[95.0, 1.31, 'V', 2],[124.0, 2, 'eV', 2]

Y
###High Open Circuit voltage solar cells based on bright mixed halide CsPbBrI2 perovskite nanocrystals synthesized under ambient air conditions|Sotirios Christodoulou,Francesco Di Stasio,Santanu Pradhan,Alexandros Stavrinadis,Gerasimos Konstantatos###
(17546, 17546)
 We performed anion exchange reactions in concentrated NCsolutions with I-, thus inducing a PL<missing VAR> red-shift up to 676 nm, and obtaining ahigh PLQY in film (65%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 676, 'nm', 0],[7.0, 65, '%', 0],[73.0, 5.3, '%', 2],[92.0, 1.31, 'V', 2],[121.0, 2, 'eV', 2]

Cu
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(17979, 17979)
Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 12.2, '%', 5],[308.0, 12.0, '%', 5]

Zn
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(17981, 17981)
Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 12.2, '%', 5],[306.0, 12.0, '%', 5]

Sn
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(17983, 17983)
Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 12.2, '%', 5],[304.0, 12.0, '%', 5]

S
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(17985, 17985)
Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 12.2, '%', 5],[302.0, 12.0, '%', 5]

Sn
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18038, 18038)
 Aqueous precursors provide an alluring approach for low-cost andenvironmentally friendly production of earth-abundant Cu2ZnSn(S,Se)4 (CZTSSe)solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 12.2, '%', 4],[249.0, 12.0, '%', 4]

S
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18040, 18040)
 Aqueous precursors provide an alluring approach for low-cost andenvironmentally friendly production of earth-abundant Cu2ZnSn(S,Se)4 (CZTSSe)solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 12.2, '%', 4],[247.0, 12.0, '%', 4]

Se
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18042, 18042)
 Aqueous precursors provide an alluring approach for low-cost andenvironmentally friendly production of earth-abundant Cu2ZnSn(S,Se)4 (CZTSSe)solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 12.2, '%', 4],[245.0, 12.0, '%', 4]

C
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18047, 18047)
 Aqueous precursors provide an alluring approach for low-cost andenvironmentally friendly production of earth-abundant Cu2ZnSn(S,Se)4 (CZTSSe)solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 12.2, '%', 4],[240.0, 12.0, '%', 4]

Se
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18051, 18051)
 Aqueous precursors provide an alluring approach for low-cost andenvironmentally friendly production of earth-abundant Cu2ZnSn(S,Se)4 (CZTSSe)solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 12.2, '%', 4],[236.0, 12.0, '%', 4]

H
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18137, 18137)
 Herein, we introduce thioglycolic acid,which possesses strong coordination (-SH) and hydrophilic (-COOH) groups, asthe agent and use deprotonation to regulate the coordination competition withinthe aqueous solution.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 12.2, '%', 2],[150.0, 12.0, '%', 2]

H
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18149, 18149)
 Herein, we introduce thioglycolic acid,which possesses strong coordination (-SH) and hydrophilic (-COOH) groups, asthe agent and use deprotonation to regulate the coordination competition withinthe aqueous solution.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 12.2, '%', 2],[138.0, 12.0, '%', 2]

C
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18252, 18252)
 These factors have contributed to achievingCZTSSe solar cells with efficiency of as high as 12.2% (a certified efficiencyof 12.0%) and providing an extremely wide time window for precursor storage andusage.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 12.2, '%', 0],[35.0, 12.0, '%', 0]

SSe
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18255, 18256)
 These factors have contributed to achievingCZTSSe solar cells with efficiency of as high as 12.2% (a certified efficiencyof 12.0%) and providing an extremely wide time window for precursor storage andusage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 12.2, '%', 0],[31.0, 12.0, '%', 0]

C
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18342, 18342)
 This work represents significant progress in the non-toxic solutionfabrication of CZTSSe solar cells and holds great potential for the developmentof CZTSSe and other metal sulfide solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 12.2, '%', 1],[55.0, 12.0, '%', 1]

SSe
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18345, 18346)
 This work represents significant progress in the non-toxic solutionfabrication of CZTSSe solar cells and holds great potential for the developmentof CZTSSe and other metal sulfide solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 12.2, '%', 1],[58.0, 12.0, '%', 1]

C
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18369, 18369)
 This work represents significant progress in the non-toxic solutionfabrication of CZTSSe solar cells and holds great potential for the developmentof CZTSSe and other metal sulfide solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 12.2, '%', 1],[82.0, 12.0, '%', 1]

SSe
###Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells|Linbao Guo,Jiangjian Shi,Qing Yu,Biwen Duan,Xiao Xu,Jiazheng Zhou,Jionghua Wu,Yusheng Li,Dongmei Li,Huijue Wu,Yanhong Luo,Qingbo Meng###
(18372, 18373)
 This work represents significant progress in the non-toxic solutionfabrication of CZTSSe solar cells and holds great potential for the developmentof CZTSSe and other metal sulfide solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 12.2, '%', 1],[85.0, 12.0, '%', 1]

Os
###Efficiency limits of Perovskite Solar Cells with Transition Metal Oxides as Hole Transport Layers|Dhyana Sivadas,Swasti Bhatia,Pradeep Nair###
(18434, 18434)
 Transition metal oxides (TMOs) like MoOx are increasingly explored as holetransport layers for perovskite-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 21, '%', 3]

Mo
###Efficiency limits of Perovskite Solar Cells with Transition Metal Oxides as Hole Transport Layers|Dhyana Sivadas,Swasti Bhatia,Pradeep Nair###
(18439, 18439)
 Transition metal oxides (TMOs) like MoOx are increasingly explored as holetransport layers for perovskite-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 21, '%', 3]

P
###Efficiency limits of Perovskite Solar Cells with Transition Metal Oxides as Hole Transport Layers|Dhyana Sivadas,Swasti Bhatia,Pradeep Nair###
(18513, 18513)
 Due to their large workfunction, the hole collection mechanism of such solar cells are fundamentallydifferent from other materials like PEDOT<missing VAR> PSS, and the associated deviceoptimizations are not well elucidated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 21, '%', 2]

O
###Efficiency limits of Perovskite Solar Cells with Transition Metal Oxides as Hole Transport Layers|Dhyana Sivadas,Swasti Bhatia,Pradeep Nair###
(18516, 18516)
 Due to their large workfunction, the hole collection mechanism of such solar cells are fundamentallydifferent from other materials like PEDOT<missing VAR> PSS, and the associated deviceoptimizations are not well elucidated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 21, '%', 2]

PSS
###Efficiency limits of Perovskite Solar Cells with Transition Metal Oxides as Hole Transport Layers|Dhyana Sivadas,Swasti Bhatia,Pradeep Nair###
(18519, 18521)
 Due to their large workfunction, the hole collection mechanism of such solar cells are fundamentallydifferent from other materials like PEDOT<missing VAR> PSS, and the associated deviceoptimizations are not well elucidated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 21, '%', 2]

In
###Efficiency limits of Perovskite Solar Cells with Transition Metal Oxides as Hole Transport Layers|Dhyana Sivadas,Swasti Bhatia,Pradeep Nair###
(18544, 18544)
 In addition, the prospects of sucharchitectures against the challenges posed by ion migration are yet to beexplored - which we critically examine in this contribution through detailednumerical simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 21, '%', 1]

O
###Efficiency limits of Perovskite Solar Cells with Transition Metal Oxides as Hole Transport Layers|Dhyana Sivadas,Swasti Bhatia,Pradeep Nair###
(18662, 18662)
 Curiously, we find that, for similar ion densities andinterface recombination velocities, ion migration is more detrimental forPerovskite solar cells with TMO contact layers with much lower achievableefficiency limits (21%).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 21, '%', 0]

Os
###Efficiency limits of Perovskite Solar Cells with Transition Metal Oxides as Hole Transport Layers|Dhyana Sivadas,Swasti Bhatia,Pradeep Nair###
(18759, 18759)
 The insights shared by this work should be of broadinterest to the community in terms of long-term stability, efficiencydegradation and hence could help critically evaluate the promises and prospectsof TMOs as hole contact layers for perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 21, '%', 1]

In
###Influence of Light Soaking on Silicon Heterojunction Solar Cells With Various Architectures|Jean Cattin,Laurie-Lou Senaud,Jan Haschke,Bertrand Paviet-Salomon,Matthieu Despeisse,Christophe Ballif,Mathieu Boccard###
(18811, 18811)
 In this article, we investigate the effect of prolonged light exposure onsilicon heterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UV
###Influence of Light Soaking on Silicon Heterojunction Solar Cells With Various Architectures|Jean Cattin,Laurie-Lou Senaud,Jan Haschke,Bertrand Paviet-Salomon,Matthieu Despeisse,Christophe Ballif,Mathieu Boccard###
(19036, 19037)
 Degradation is avoided when a sufficiently thick (p) layer is used,or when exposure of the (p) layer to UV light is avoided, as is the case of therear-junction configuration, commonly used in the industry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features|Mirsaeid Sarollahi,Mohammad Zamani Alavijeh,Rohith Allaparthi,Reem Alhelais,Malak A. Refaei,Md Helal Uddin Maruf,Morgan E. Ware###
(19181, 19181)
Modeling of V graded In(x)Ga(1-x)N solar cells comparison of strained and relaxed features.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 20, '%', 4],[174.0, 80, '%', 4],[194.0, 100, 'nm', 4],[240.0, 5.5, '%', 6],[257.0, 60, '%', 6],[284.0, 8.3, '%', 7],[289.0, 90, '%', 7]

In
###Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features|Mirsaeid Sarollahi,Mohammad Zamani Alavijeh,Rohith Allaparthi,Reem Alhelais,Malak A. Refaei,Md Helal Uddin Maruf,Morgan E. Ware###
(19185, 19185)
Modeling of V graded In(x)Ga(1-x)N solar cells comparison of strained and relaxed features.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 20, '%', 4],[170.0, 80, '%', 4],[190.0, 100, 'nm', 4],[236.0, 5.5, '%', 6],[253.0, 60, '%', 6],[280.0, 8.3, '%', 7],[285.0, 90, '%', 7]

Ga(1-x)N
###Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features|Mirsaeid Sarollahi,Mohammad Zamani Alavijeh,Rohith Allaparthi,Reem Alhelais,Malak A. Refaei,Md Helal Uddin Maruf,Morgan E. Ware###
(19189, 19195)
Modeling of V graded In(x)Ga(1-x)N solar cells comparison of strained and relaxed features.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[155.0, 20, '%', 4],[160.0, 80, '%', 4],[180.0, 100, 'nm', 4],[226.0, 5.5, '%', 6],[243.0, 60, '%', 6],[270.0, 8.3, '%', 7],[275.0, 90, '%', 7]

V
###Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features|Mirsaeid Sarollahi,Mohammad Zamani Alavijeh,Rohith Allaparthi,Reem Alhelais,Malak A. Refaei,Md Helal Uddin Maruf,Morgan E. Ware###
(19222, 19222)
 The optical properties of V graded InGaN solar cells are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 20, '%', 3],[133.0, 80, '%', 3],[153.0, 100, 'nm', 3],[199.0, 5.5, '%', 5],[216.0, 60, '%', 5],[243.0, 8.3, '%', 6],[248.0, 90, '%', 6]

InGaN
###Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features|Mirsaeid Sarollahi,Mohammad Zamani Alavijeh,Rohith Allaparthi,Reem Alhelais,Malak A. Refaei,Md Helal Uddin Maruf,Morgan E. Ware###
(19226, 19228)
 The optical properties of V graded InGaN solar cells are studied.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 20, '%', 3],[127.0, 80, '%', 3],[147.0, 100, 'nm', 3],[193.0, 5.5, '%', 5],[210.0, 60, '%', 5],[237.0, 8.3, '%', 6],[242.0, 90, '%', 6]

InGaN
###Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features|Mirsaeid Sarollahi,Mohammad Zamani Alavijeh,Rohith Allaparthi,Reem Alhelais,Malak A. Refaei,Md Helal Uddin Maruf,Morgan E. Ware###
(19242, 19244)
 GradedInGaN well structures with the indium composition increasing then decreasing ina V shaped pattern have been designed.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 20, '%', 2],[111.0, 80, '%', 2],[131.0, 100, 'nm', 2],[177.0, 5.5, '%', 4],[194.0, 60, '%', 4],[221.0, 8.3, '%', 5],[226.0, 90, '%', 5]

V
###Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features|Mirsaeid Sarollahi,Mohammad Zamani Alavijeh,Rohith Allaparthi,Reem Alhelais,Malak A. Refaei,Md Helal Uddin Maruf,Morgan E. Ware###
(19269, 19269)
 GradedInGaN well structures with the indium composition increasing then decreasing ina V shaped pattern have been designed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 20, '%', 2],[86.0, 80, '%', 2],[106.0, 100, 'nm', 2],[152.0, 5.5, '%', 4],[169.0, 60, '%', 4],[196.0, 8.3, '%', 5],[201.0, 90, '%', 5]

GaN
###Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features|Mirsaeid Sarollahi,Mohammad Zamani Alavijeh,Rohith Allaparthi,Reem Alhelais,Malak A. Refaei,Md Helal Uddin Maruf,Morgan E. Ware###
(19334, 19335)
 Separate structuresare designed by varying the indium alloy profile from GaN to maximum indiumconcentrations ranging from 20% to 80%, while maintaining a constant overallstructure thicknesses of 100 nm.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 20, '%', 0],[20.0, 80, '%', 0],[40.0, 100, 'nm', 0],[86.0, 5.5, '%', 2],[103.0, 60, '%', 2],[130.0, 8.3, '%', 3],[135.0, 90, '%', 3]

In
###Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features|Mirsaeid Sarollahi,Mohammad Zamani Alavijeh,Rohith Allaparthi,Reem Alhelais,Malak A. Refaei,Md Helal Uddin Maruf,Morgan E. Ware###
(19523, 19523)
While Vegards law predicts the bandgap under relaxed conditions, a Vegard likelaw is empirically determined from the output of Nextnano for varying Incompositions in order to calculate solar cell parameters under strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 20, '%', 4],[168.0, 80, '%', 4],[148.0, 100, 'nm', 4],[102.0, 5.5, '%', 2],[85.0, 60, '%', 2],[58.0, 8.3, '%', 1],[53.0, 90, '%', 1]

SiCH
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19567, 19569)
Simulation of the Efficiency of a-SiCH/a-SiH Tandem Multilayer Solar Cells.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 19.62, '%', 4],[324.0, 500, 'nm', 4],[401.0, 22.6, '%', 6],[416.0, 270, 'nm', 6]

SiH
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19573, 19574)
Simulation of the Efficiency of a-SiCH/a-SiH Tandem Multilayer Solar Cells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 19.62, '%', 4],[319.0, 500, 'nm', 4],[396.0, 22.6, '%', 6],[411.0, 270, 'nm', 6]

In
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19585, 19585)
 In this paper we carried out theoretical study of the general issues relatedto the efficiency of SiCH/a-SiH single- and multi-junction tandem solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 19.62, '%', 3],[308.0, 500, 'nm', 3],[385.0, 22.6, '%', 5],[400.0, 270, 'nm', 5]

SiCH
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19620, 19622)
 In this paper we carried out theoretical study of the general issues relatedto the efficiency of SiCH/a-SiH single- and multi-junction tandem solarcells.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 19.62, '%', 3],[271.0, 500, 'nm', 3],[348.0, 22.6, '%', 5],[363.0, 270, 'nm', 5]

SiH
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19626, 19627)
 In this paper we carried out theoretical study of the general issues relatedto the efficiency of SiCH/a-SiH single- and multi-junction tandem solarcells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 19.62, '%', 3],[266.0, 500, 'nm', 3],[343.0, 22.6, '%', 5],[358.0, 270, 'nm', 5]

PS
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19664, 19665)
 Implementation of numerical simulations by the use of AM<missing VAR>PS-1D<missing VAR> program ofone-dimensional analysis of microelectronic and photonic structures for theanalysis of hydrogenated silicon solar cells allowed us to formulate theoptimal design of new kind of multi-junction tandem solar cells, providing itsmost efficient operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 19.62, '%', 2],[228.0, 500, 'nm', 2],[305.0, 22.6, '%', 4],[320.0, 270, 'nm', 4]

SiCH
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19762, 19764)
 The numerical analysis of SiCH/a-SiHsingle-junction solar cell whith doped i<missing VAR>-layer used as the intermediateabsorbing layer (a -Si H) placed between layers of p<missing VAR>-type (a-SiC H) andn<missing VAR>-type (a-Si H) has been conducted.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 19.62, '%', 1],[129.0, 500, 'nm', 1],[206.0, 22.6, '%', 3],[221.0, 270, 'nm', 3]

SiH
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19768, 19769)
 The numerical analysis of SiCH/a-SiHsingle-junction solar cell whith doped i<missing VAR>-layer used as the intermediateabsorbing layer (a -Si H) placed between layers of p<missing VAR>-type (a-SiC H) andn<missing VAR>-type (a-Si H) has been conducted.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 19.62, '%', 1],[124.0, 500, 'nm', 1],[201.0, 22.6, '%', 3],[216.0, 270, 'nm', 3]

Si
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19805, 19805)
 The numerical analysis of SiCH/a-SiHsingle-junction solar cell whith doped i<missing VAR>-layer used as the intermediateabsorbing layer (a -Si H) placed between layers of p<missing VAR>-type (a-SiC H) andn<missing VAR>-type (a-Si H) has been conducted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 19.62, '%', 1],[88.0, 500, 'nm', 1],[165.0, 22.6, '%', 3],[180.0, 270, 'nm', 3]

H
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19807, 19807)
 The numerical analysis of SiCH/a-SiHsingle-junction solar cell whith doped i<missing VAR>-layer used as the intermediateabsorbing layer (a -Si H) placed between layers of p<missing VAR>-type (a-SiC H) andn<missing VAR>-type (a-Si H) has been conducted.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 19.62, '%', 1],[86.0, 500, 'nm', 1],[163.0, 22.6, '%', 3],[178.0, 270, 'nm', 3]

SiC
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19825, 19826)
 The numerical analysis of SiCH/a-SiHsingle-junction solar cell whith doped i<missing VAR>-layer used as the intermediateabsorbing layer (a -Si H) placed between layers of p<missing VAR>-type (a-SiC H) andn<missing VAR>-type (a-Si H) has been conducted.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 19.62, '%', 1],[67.0, 500, 'nm', 1],[144.0, 22.6, '%', 3],[159.0, 270, 'nm', 3]

H
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19828, 19828)
 The numerical analysis of SiCH/a-SiHsingle-junction solar cell whith doped i<missing VAR>-layer used as the intermediateabsorbing layer (a -Si H) placed between layers of p<missing VAR>-type (a-SiC H) andn<missing VAR>-type (a-Si H) has been conducted.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 19.62, '%', 1],[65.0, 500, 'nm', 1],[142.0, 22.6, '%', 3],[157.0, 270, 'nm', 3]

Si
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19841, 19841)
 The numerical analysis of SiCH/a-SiHsingle-junction solar cell whith doped i<missing VAR>-layer used as the intermediateabsorbing layer (a -Si H) placed between layers of p<missing VAR>-type (a-SiC H) andn<missing VAR>-type (a-Si H) has been conducted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 19.62, '%', 1],[52.0, 500, 'nm', 1],[129.0, 22.6, '%', 3],[144.0, 270, 'nm', 3]

H
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19843, 19843)
 The numerical analysis of SiCH/a-SiHsingle-junction solar cell whith doped i<missing VAR>-layer used as the intermediateabsorbing layer (a -Si H) placed between layers of p<missing VAR>-type (a-SiC H) andn<missing VAR>-type (a-Si H) has been conducted.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 19.62, '%', 1],[50.0, 500, 'nm', 1],[127.0, 22.6, '%', 3],[142.0, 270, 'nm', 3]

SiCH
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19927, 19929)
 The optimization of the newlydeveloped multi-junction structure of a-SiCH/a-SiH tandem solar cell has beenconducted.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 19.62, '%', 1],[34.0, 500, 'nm', 1],[41.0, 22.6, '%', 1],[56.0, 270, 'nm', 1]

SiH
###Simulation of the Efficiency of a-SiC:H/a-Si:H Tandem Multilayer Solar Cells|Khikmat Kh. Muminov,Ashrafalsadat S. Mirkamali###
(19933, 19934)
 The optimization of the newlydeveloped multi-junction structure of a-SiCH/a-SiH tandem solar cell has beenconducted.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 19.62, '%', 1],[40.0, 500, 'nm', 1],[36.0, 22.6, '%', 1],[51.0, 270, 'nm', 1]

CH3NH3PbI3/GeSe
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20004, 20015)
CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[301.0, 100, '%', 5],[318.0, 42.7, '%', 5],[333.0, 23.77, '%', 5]

(CH3NH3PbI3)
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20034, 20044)
 Perovskite (CH3NH3PbI3) solar cells have made significant advances recently.
Featurization successful!
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 100, '%', 4],[289.0, 42.7, '%', 4],[304.0, 23.77, '%', 4]

In
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20062, 20062)
In this paper, we propose a bilayer heterojunction solar cell comprised of aperovskite layer combining with a IV-VI group semiconductor layer, which cangive a conversion efficiency even higher than the conventional perovskite solarcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 100, '%', 3],[271.0, 42.7, '%', 3],[286.0, 23.77, '%', 3]

IV
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20100, 20101)
In this paper, we propose a bilayer heterojunction solar cell comprised of aperovskite layer combining with a IV-VI group semiconductor layer, which cangive a conversion efficiency even higher than the conventional perovskite solarcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 100, '%', 3],[232.0, 42.7, '%', 3],[247.0, 23.77, '%', 3]

VI
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20103, 20104)
In this paper, we propose a bilayer heterojunction solar cell comprised of aperovskite layer combining with a IV-VI group semiconductor layer, which cangive a conversion efficiency even higher than the conventional perovskite solarcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 100, '%', 3],[229.0, 42.7, '%', 3],[244.0, 23.77, '%', 3]

GeSe
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20224, 20225)
 We studied the semiconducting layerssuch as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is thebest, where the optical absorption efficiency in the perovskite/GeSe solar cellis dramatically increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 100, '%', 1],[108.0, 42.7, '%', 1],[123.0, 23.77, '%', 1]

SnSe
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20228, 20229)
 We studied the semiconducting layerssuch as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is thebest, where the optical absorption efficiency in the perovskite/GeSe solar cellis dramatically increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 100, '%', 1],[104.0, 42.7, '%', 1],[119.0, 23.77, '%', 1]

GeS
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20232, 20233)
 We studied the semiconducting layerssuch as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is thebest, where the optical absorption efficiency in the perovskite/GeSe solar cellis dramatically increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 100, '%', 1],[100.0, 42.7, '%', 1],[115.0, 23.77, '%', 1]

SnS
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20238, 20239)
 We studied the semiconducting layerssuch as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is thebest, where the optical absorption efficiency in the perovskite/GeSe solar cellis dramatically increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 100, '%', 1],[94.0, 42.7, '%', 1],[109.0, 23.77, '%', 1]

GeSe
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20251, 20252)
 We studied the semiconducting layerssuch as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is thebest, where the optical absorption efficiency in the perovskite/GeSe solar cellis dramatically increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 100, '%', 1],[81.0, 42.7, '%', 1],[96.0, 23.77, '%', 1]

GeSe
###CH3NH3PbI3/GeSe bilayer heterojunction solar cell with high performance|Guo-Jiao Hou,Dong-Lin Wang,Roshan Ali,Yu-Rong Zhou,Zhen-Gang Zhu,Gang Su###
(20278, 20279)
 We studied the semiconducting layerssuch as GeSe, SnSe, GeS, and SnS, respectively, and found that GeSe is thebest, where the optical absorption efficiency in the perovskite/GeSe solar cellis dramatically increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 100, '%', 1],[54.0, 42.7, '%', 1],[69.0, 23.77, '%', 1]

Ga1-xAs
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20476, 20480)
Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[80.0, 1997.0, 'The', 1]

Ga1-ySb
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20491, 20495)
Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[65.0, 1997.0, 'The', 1]

II
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20499, 20500)
Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1997.0, 'The', 1]

(IB)
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20525, 20528)
 The intermediate band (IB) cell is a concept of highly efficient solar cellsproposed by Luque and Marti in 1997. The IB concept uses nonlinear effect oftwo photon absorption enforced with concentration of such photons forgeneration of additional photocurrent in single p-n-junction cells.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 1997.0, 'The', 0]

IB
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20562, 20563)
 The intermediate band (IB) cell is a concept of highly efficient solar cellsproposed by Luque and Marti in 1997. The IB concept uses nonlinear effect oftwo photon absorption enforced with concentration of such photons forgeneration of additional photocurrent in single p-n-junction cells.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1997.0, 'The', 0]

In
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20618, 20618)
 In thistheoretical work we demonstrate an important role of self-organized strainedtype-II AlyGa1-ySb quantum dots for operation in IB GaAs solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1997.0, 'The', 1]

II
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20648, 20649)
 In thistheoretical work we demonstrate an important role of self-organized strainedtype-II AlyGa1-ySb quantum dots for operation in IB GaAs solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1997.0, 'The', 1]

Ga1-ySb
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20652, 20656)
 In thistheoretical work we demonstrate an important role of self-organized strainedtype-II AlyGa1-ySb quantum dots for operation in IB GaAs solar cells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[92.0, 1997.0, 'The', 1]

IB
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20668, 20669)
 In thistheoretical work we demonstrate an important role of self-organized strainedtype-II AlyGa1-ySb quantum dots for operation in IB GaAs solar cells.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 1997.0, 'The', 1]

GaAs
###Efficiency Limit of Intermediate Band AlxGa1-xAs Solar Cell Based on AlyGa1-ySb Type-II Quantum Dots Embedded Outside of the Depletion Region|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(20671, 20672)
 In thistheoretical work we demonstrate an important role of self-organized strainedtype-II AlyGa1-ySb quantum dots for operation in IB GaAs solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1997.0, 'The', 1]

(PbS)
###Optimal quantum dot size for photovoltaics with fusion|Benedicta Sherrie,Alison M. Funston,Laszlo Frazer###
(20789, 20792)
 We use Monte Carlo simulation topredict that lead sulfide (PbS) quantum dot sensitizers will enable fusion witha figure of merit on the m<missing VAR>A cm-2 scale, exceeding current records, whileenabling silicon cell compatibility.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells|Laura Barrutia,IvÁn Lombardero1,Mario Ochoa,Mercedes GabÁs,IvÁn GarcÍa,TomÁs Palacios,Andrew Johnson,Ignacio Rey-Stolle,Carlos Algora###
(20918, 20920)
On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 16, '%', 2],[243.0, 35, '%', 6],[267.0, 4, '%', 6],[281.0, 1, ',', 6],[328.0, -1.8, '%', 7],[353.0, 1, '%', 8],[362.0, 1, ',', 8]

V
###On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells|Laura Barrutia,IvÁn Lombardero1,Mario Ochoa,Mercedes GabÁs,IvÁn GarcÍa,TomÁs Palacios,Andrew Johnson,Ignacio Rey-Stolle,Carlos Algora###
(20922, 20922)
On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 16, '%', 2],[241.0, 35, '%', 6],[265.0, 4, '%', 6],[279.0, 1, ',', 6],[326.0, -1.8, '%', 7],[351.0, 1, '%', 8],[360.0, 1, ',', 8]

In
###On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells|Laura Barrutia,IvÁn Lombardero1,Mario Ochoa,Mercedes GabÁs,IvÁn GarcÍa,TomÁs Palacios,Andrew Johnson,Ignacio Rey-Stolle,Carlos Algora###
(21037, 21037)
 In this work the use of graphene for concentration applicationson III-V multijunction solar cells, which indeed are the solar cells with thehighest efficiency, is demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 16, '%', 2],[126.0, 35, '%', 2],[150.0, 4, '%', 2],[164.0, 1, ',', 2],[211.0, -1.8, '%', 3],[236.0, 1, '%', 4],[245.0, 1, ',', 4]

III
###On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells|Laura Barrutia,IvÁn Lombardero1,Mario Ochoa,Mercedes GabÁs,IvÁn GarcÍa,TomÁs Palacios,Andrew Johnson,Ignacio Rey-Stolle,Carlos Algora###
(21060, 21062)
 In this work the use of graphene for concentration applicationson III-V multijunction solar cells, which indeed are the solar cells with thehighest efficiency, is demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 16, '%', 2],[101.0, 35, '%', 2],[125.0, 4, '%', 2],[139.0, 1, ',', 2],[186.0, -1.8, '%', 3],[211.0, 1, '%', 4],[220.0, 1, ',', 4]

V
###On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells|Laura Barrutia,IvÁn Lombardero1,Mario Ochoa,Mercedes GabÁs,IvÁn GarcÍa,TomÁs Palacios,Andrew Johnson,Ignacio Rey-Stolle,Carlos Algora###
(21064, 21064)
 In this work the use of graphene for concentration applicationson III-V multijunction solar cells, which indeed are the solar cells with thehighest efficiency, is demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 16, '%', 2],[99.0, 35, '%', 2],[123.0, 4, '%', 2],[137.0, 1, ',', 2],[184.0, -1.8, '%', 3],[209.0, 1, '%', 4],[218.0, 1, ',', 4]

As
###On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells|Laura Barrutia,IvÁn Lombardero1,Mario Ochoa,Mercedes GabÁs,IvÁn GarcÍa,TomÁs Palacios,Andrew Johnson,Ignacio Rey-Stolle,Carlos Algora###
(21253, 21253)
 As a result, an absolute efficiencyimprovement close to 1% at concentrations of 1,000 suns was achieved withrespect to triple junction solar cells without graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 16, '%', 6],[90.0, 35, '%', 2],[66.0, 4, '%', 2],[52.0, 1, ',', 2],[5.0, -1.8, '%', 1],[20.0, 1, '%', 0],[29.0, 1, ',', 0]

(PV)
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21404, 21407)
 The decrease of solar cell efficiency with temperature is a known problem forphotovoltaics (PV).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 3.1, '%', 5],[271.0, 16.4, '%', 5],[276.0, 19.5, '%', 5]

In
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21446, 21446)
 In this perspective HybridThermoelectric-Photovoltaic (HTEPV) systems, which recover solar cell heatlosses to produce an additional power output, can be a suitable option.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 3.1, '%', 3],[232.0, 16.4, '%', 3],[237.0, 19.5, '%', 3]

H
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21460, 21460)
 In this perspective HybridThermoelectric-Photovoltaic (HTEPV) systems, which recover solar cell heatlosses to produce an additional power output, can be a suitable option.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 3.1, '%', 3],[218.0, 16.4, '%', 3],[223.0, 19.5, '%', 3]

V
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21464, 21464)
 In this perspective HybridThermoelectric-Photovoltaic (HTEPV) systems, which recover solar cell heatlosses to produce an additional power output, can be a suitable option.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 3.1, '%', 3],[214.0, 16.4, '%', 3],[219.0, 19.5, '%', 3]

H
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21549, 21549)
 Howeveronly hybridization of wide-gap solar cells is convenient in terms of efficiencygains and deserves investigation to evaluate HTEPV devices effectiveness.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3.1, '%', 2],[129.0, 16.4, '%', 2],[134.0, 19.5, '%', 2]

PV
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21552, 21553)
 Howeveronly hybridization of wide-gap solar cells is convenient in terms of efficiencygains and deserves investigation to evaluate HTEPV devices effectiveness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 3.1, '%', 2],[125.0, 16.4, '%', 2],[130.0, 19.5, '%', 2]

In
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21560, 21560)
 Inthis work we report the modeling and the development of customized bismuthtelluride thermoelectric generators, optimized to be hybridized with amorphoussilicon (aSi), Gallium Indium Phosphide (GaInP) or Perovskites solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 3.1, '%', 1],[118.0, 16.4, '%', 1],[123.0, 19.5, '%', 1]

Si
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21612, 21612)
 Inthis work we report the modeling and the development of customized bismuthtelluride thermoelectric generators, optimized to be hybridized with amorphoussilicon (aSi), Gallium Indium Phosphide (GaInP) or Perovskites solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3.1, '%', 1],[66.0, 16.4, '%', 1],[71.0, 19.5, '%', 1]

(GaInP)
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21622, 21626)
 Inthis work we report the modeling and the development of customized bismuthtelluride thermoelectric generators, optimized to be hybridized with amorphoussilicon (aSi), Gallium Indium Phosphide (GaInP) or Perovskites solar cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3.1, '%', 1],[52.0, 16.4, '%', 1],[57.0, 19.5, '%', 1]

P
###Practical development of efficient thermoelectric-photovoltaic hybrid systems based on wide-gap solar cells|Bruno Lorenzi,Paolo Mariani,Andrea Reale,Aldo Di Carlo,Gang Chen,Dario Narducci###
(21746, 21746)
 These enhancements were thenexperimentally validated for the case of Perovskites solar cells, for whichmaximum gains were found to occur at typical operating temperatures ofconventional PVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 3.1, '%', 1],[68.0, 16.4, '%', 1],[63.0, 19.5, '%', 1]

C60
###Does Singlet Fission Enhance the Performance of Organic Solar Cells?|K. Aryanpour,J. A. Muñoz,S. Mazumdar###
(21973, 21974)
 We focus on thepentacene-C60 solar cell, and on the basis of our calculations andavailable experimental data, we conclude that there is not enough evidence thatthese requirements are met by the donor-acceptor interface here.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiO2
###Low cost and high performance light trapping structure for thin-film solar cells|DongLin Wang,Huijuan Cui,Gang Su###
(22266, 22268)
 Here we propose a novel and cheap light trappingstructure based on the prism structured SiO2 for thin-film solar cells, and aflat active layer is introduced purposefully.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiH
###Low cost and high performance light trapping structure for thin-film solar cells|DongLin Wang,Huijuan Cui,Gang Su###
(22370, 22371)
 By examining our scheme, it is disclosed that the conversionefficiency of the flat a-SiH thin-film solar cell can be promoted to exceedthe currently certified highest value.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Low cost and high performance light trapping structure for thin-film solar cells|DongLin Wang,Huijuan Cui,Gang Su###
(22403, 22403)
 As the cost of SiO2-based light trappingstructure is much cheaper and easier to fabricate than other materials, thisproposal would have essential impact and wide applications in thin-film solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiO2
###Low cost and high performance light trapping structure for thin-film solar cells|DongLin Wang,Huijuan Cui,Gang Su###
(22411, 22413)
 As the cost of SiO2-based light trappingstructure is much cheaper and easier to fabricate than other materials, thisproposal would have essential impact and wide applications in thin-film solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A Physics-based Analytical Model for Perovskite Solar Cells|Xingshu Sun,Reza Asadpour,Wanyi Nie,Aditya D. Mohite,Muhammad A. Alam###
(22612, 22612)
 In this paper, we develop sucha physics-based analytical model to describe the operation of different typesof perovskite solar cells, explicitly accounting non-uniform generation,carrier selective transport layers, and voltage-dependent carrier collection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###New Design of Potentially Low-cost Solar Cells Using TiO2/Graphite Composite as Photon Absorber|Dui Yanto Rahman,Mamat Rokhmat,Elfi Yuliza,Euis Sustini,Mikrajuddin Abdullah###
(22797, 22799)
New Design of Potentially Low-cost Solar Cells Using TiO2/Graphite Composite as Photon Absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23101, 23101)
Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 12.6, '%', 2]

S
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23120, 23120)
 Cu2ZnSnS(e)4 (CZTS(e)) solar cells have attracted much attention due to theelemental abundance and the non-toxicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 12.6, '%', 1]

C
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23127, 23127)
 Cu2ZnSnS(e)4 (CZTS(e)) solar cells have attracted much attention due to theelemental abundance and the non-toxicity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 12.6, '%', 1]

S
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23130, 23130)
 Cu2ZnSnS(e)4 (CZTS(e)) solar cells have attracted much attention due to theelemental abundance and the non-toxicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 12.6, '%', 1]

Sn
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23188, 23188)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 12.6, '%', 0]

S
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23190, 23190)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 12.6, '%', 0]

Se
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23192, 23192)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 12.6, '%', 0]

C
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23197, 23197)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 12.6, '%', 0]

Se
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23201, 23201)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 12.6, '%', 0]

Cu
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23221, 23221)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 12.6, '%', 0]

In
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23223, 23223)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 12.6, '%', 0]

Ga
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23225, 23225)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 12.6, '%', 0]

Se2
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23227, 23228)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 12.6, '%', 0]

CI
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23231, 23232)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 12.6, '%', 0]

S
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23234, 23234)
 However, the record efficiency of12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that ofCu(In,Ga)Se2 (CIG<missing VAR>S) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 12.6, '%', 0]

In
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23260, 23260)
 In recent years, large amount investigations have been done toanalyze the interfacial problems and improve the interfacial properties via avariety of methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 12.6, '%', 2]

C
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23333, 23333)
 This paper gives a review of progresses on interfaces ofCZTS(e) solar cells, including (1) the band alignment optimization atbuffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfaciallayers between CZTS(e) absorber and Mo back contact, (3) the passivation ofrear interface, (4) the passivation of front interface, and (5) the etching ofsecondary phases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 12.6, '%', 3]

S
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23336, 23336)
 This paper gives a review of progresses on interfaces ofCZTS(e) solar cells, including (1) the band alignment optimization atbuffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfaciallayers between CZTS(e) absorber and Mo back contact, (3) the passivation ofrear interface, (4) the passivation of front interface, and (5) the etching ofsecondary phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 12.6, '%', 3]

C
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23365, 23365)
 This paper gives a review of progresses on interfaces ofCZTS(e) solar cells, including (1) the band alignment optimization atbuffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfaciallayers between CZTS(e) absorber and Mo back contact, (3) the passivation ofrear interface, (4) the passivation of front interface, and (5) the etching ofsecondary phases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 12.6, '%', 3]

S
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23368, 23368)
 This paper gives a review of progresses on interfaces ofCZTS(e) solar cells, including (1) the band alignment optimization atbuffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfaciallayers between CZTS(e) absorber and Mo back contact, (3) the passivation ofrear interface, (4) the passivation of front interface, and (5) the etching ofsecondary phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 12.6, '%', 3]

S
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23389, 23389)
 This paper gives a review of progresses on interfaces ofCZTS(e) solar cells, including (1) the band alignment optimization atbuffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfaciallayers between CZTS(e) absorber and Mo back contact, (3) the passivation ofrear interface, (4) the passivation of front interface, and (5) the etching ofsecondary phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 12.6, '%', 3]

C
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23402, 23402)
 This paper gives a review of progresses on interfaces ofCZTS(e) solar cells, including (1) the band alignment optimization atbuffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfaciallayers between CZTS(e) absorber and Mo back contact, (3) the passivation ofrear interface, (4) the passivation of front interface, and (5) the etching ofsecondary phases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 12.6, '%', 3]

S
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23405, 23405)
 This paper gives a review of progresses on interfaces ofCZTS(e) solar cells, including (1) the band alignment optimization atbuffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfaciallayers between CZTS(e) absorber and Mo back contact, (3) the passivation ofrear interface, (4) the passivation of front interface, and (5) the etching ofsecondary phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 12.6, '%', 3]

Mo
###Interfaces of high efficient kesterite Cu2ZnSnS(e)4 thin film solar cells|Shoushuai Gao,Zhenwu Jiang,Li Wu,Jianping Ao,Yu Zeng,Yun Sun,Yi Zhang###
(23414, 23414)
 This paper gives a review of progresses on interfaces ofCZTS(e) solar cells, including (1) the band alignment optimization atbuffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfaciallayers between CZTS(e) absorber and Mo back contact, (3) the passivation ofrear interface, (4) the passivation of front interface, and (5) the etching ofsecondary phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 12.6, '%', 3]

Cs
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23516, 23516)
 Multiple exciton generation solar cells (MEGSCs) undergo low efficiency dueto material imperfections such as nonradiative recombination This paperintroduces alternative approaches for realizing photovoltaic (PV) devicessimilar to MEGSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PV)
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23559, 23562)
 Multiple exciton generation solar cells (MEGSCs) undergo low efficiency dueto material imperfections such as nonradiative recombination This paperintroduces alternative approaches for realizing photovoltaic (PV) devicessimilar to MEGSCs.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23574, 23575)
 Multiple exciton generation solar cells (MEGSCs) undergo low efficiency dueto material imperfections such as nonradiative recombination This paperintroduces alternative approaches for realizing photovoltaic (PV) devicessimilar to MEGSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23599, 23600)
 Furthermore, we reorganize the detailed balance equation ofMEGSCs such that it is similar to that of independent connection tandem solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23653, 23653)
 This is possible because of the spectral dependence of the ideal Q<missing VAR>Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23688, 23689)
Finally, we compare these two similar equations and propose alternativeapproaches for realizing MEGSC-like tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23716, 23717)
 We explain thedifficulty in fabricating MEGSCs, which arises from the high rate ofnon-idealities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23740, 23740)
 In this regard, the deconstruction of the detailed balanceequation of MEGSCs can reveal alternative paths for replacing MEGSCs withtandem solar cell configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23767, 23768)
 In this regard, the deconstruction of the detailed balanceequation of MEGSCs can reveal alternative paths for replacing MEGSCs withtandem solar cell configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Alternative Pathways for Multiple Exciton Generation Solar Cells by Tandem Configurations|Jongwon Lee###
(23785, 23786)
 In this regard, the deconstruction of the detailed balanceequation of MEGSCs can reveal alternative paths for replacing MEGSCs withtandem solar cell configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23812, 23813)
Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 18.46, '%', 4],[368.0, 17.13, '%', 5]

ZnO
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23846, 23847)
 Solution-processed intrinsic ZnO and Al doped ZnO (ZnOAl) were spin coatedon textured n<missing VAR>-type c<missing VAR>-Si wafer to replace the phosphorus doped amorphous siliconas the electron selective transport layer (ESTL) of the Si heterojunction (SHJ)solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 18.46, '%', 3],[334.0, 17.13, '%', 4]

Al
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23851, 23851)
 Solution-processed intrinsic ZnO and Al doped ZnO (ZnOAl) were spin coatedon textured n<missing VAR>-type c<missing VAR>-Si wafer to replace the phosphorus doped amorphous siliconas the electron selective transport layer (ESTL) of the Si heterojunction (SHJ)solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 18.46, '%', 3],[330.0, 17.13, '%', 4]

ZnO
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23855, 23856)
 Solution-processed intrinsic ZnO and Al doped ZnO (ZnOAl) were spin coatedon textured n<missing VAR>-type c<missing VAR>-Si wafer to replace the phosphorus doped amorphous siliconas the electron selective transport layer (ESTL) of the Si heterojunction (SHJ)solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 18.46, '%', 3],[325.0, 17.13, '%', 4]

(ZnOAl)
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23858, 23862)
 Solution-processed intrinsic ZnO and Al doped ZnO (ZnOAl) were spin coatedon textured n<missing VAR>-type c<missing VAR>-Si wafer to replace the phosphorus doped amorphous siliconas the electron selective transport layer (ESTL) of the Si heterojunction (SHJ)solar cells.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 18.46, '%', 3],[319.0, 17.13, '%', 4]

Si
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23881, 23881)
 Solution-processed intrinsic ZnO and Al doped ZnO (ZnOAl) were spin coatedon textured n<missing VAR>-type c<missing VAR>-Si wafer to replace the phosphorus doped amorphous siliconas the electron selective transport layer (ESTL) of the Si heterojunction (SHJ)solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 18.46, '%', 3],[300.0, 17.13, '%', 4]

Si
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23923, 23923)
 Solution-processed intrinsic ZnO and Al doped ZnO (ZnOAl) were spin coatedon textured n<missing VAR>-type c<missing VAR>-Si wafer to replace the phosphorus doped amorphous siliconas the electron selective transport layer (ESTL) of the Si heterojunction (SHJ)solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 18.46, '%', 3],[258.0, 17.13, '%', 4]

SH
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23928, 23929)
 Solution-processed intrinsic ZnO and Al doped ZnO (ZnOAl) were spin coatedon textured n<missing VAR>-type c<missing VAR>-Si wafer to replace the phosphorus doped amorphous siliconas the electron selective transport layer (ESTL) of the Si heterojunction (SHJ)solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 18.46, '%', 3],[252.0, 17.13, '%', 4]

ZnO
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23961, 23962)
 Besides the function of electron selective transportation, thenon-doped ZnO was found to possess certain passivation effect on c<missing VAR>-Si wafer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 18.46, '%', 2],[219.0, 17.13, '%', 3]

Si
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23982, 23982)
 Besides the function of electron selective transportation, thenon-doped ZnO was found to possess certain passivation effect on c<missing VAR>-Si wafer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 18.46, '%', 2],[199.0, 17.13, '%', 3]

SH
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(23990, 23991)
The SHJ<missing VAR> solar cells with different combinations of passivation layer (intrinsica-SiH, SiOx and non-doped ZnO) and electron transport layer (non-doped ZnO andZnOAl ) were fabricated and compared.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 18.46, '%', 1],[190.0, 17.13, '%', 2]

SiH
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24016, 24017)
The SHJ<missing VAR> solar cells with different combinations of passivation layer (intrinsica-SiH, SiOx and non-doped ZnO) and electron transport layer (non-doped ZnO andZnOAl ) were fabricated and compared.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 18.46, '%', 1],[164.0, 17.13, '%', 2]

Si
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24020, 24020)
The SHJ<missing VAR> solar cells with different combinations of passivation layer (intrinsica-SiH, SiOx and non-doped ZnO) and electron transport layer (non-doped ZnO andZnOAl ) were fabricated and compared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 18.46, '%', 1],[161.0, 17.13, '%', 2]

O
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24030, 24030)
The SHJ<missing VAR> solar cells with different combinations of passivation layer (intrinsica-SiH, SiOx and non-doped ZnO) and electron transport layer (non-doped ZnO andZnOAl ) were fabricated and compared.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 18.46, '%', 1],[151.0, 17.13, '%', 2]

ZnO
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24046, 24047)
The SHJ<missing VAR> solar cells with different combinations of passivation layer (intrinsica-SiH, SiOx and non-doped ZnO) and electron transport layer (non-doped ZnO andZnOAl ) were fabricated and compared.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 18.46, '%', 1],[134.0, 17.13, '%', 2]

ZnOAl
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24052, 24054)
The SHJ<missing VAR> solar cells with different combinations of passivation layer (intrinsica-SiH, SiOx and non-doped ZnO) and electron transport layer (non-doped ZnO andZnOAl ) were fabricated and compared.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 18.46, '%', 1],[127.0, 17.13, '%', 2]

SH
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24087, 24088)
 An efficiency up to 18.46% was achievedon a SHJ<missing VAR> solar cell with an a-SiH/ZnOAl double layer back structure.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 18.46, '%', 0],[93.0, 17.13, '%', 1]

SiH/ZnOAl
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24101, 24106)
 An efficiency up to 18.46% was achievedon a SHJ<missing VAR> solar cell with an a-SiH/ZnOAl double layer back structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, 18.46, '%', 0],[75.0, 17.13, '%', 1]

ZnO/ZnOAl
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24133, 24138)
 And, theall solution-processed non-doped ZnO/ZnOAl combination layer presents fairlygood electron selective transportation property for SHJ<missing VAR> solar cell, resultingin an efficiency of 17.13%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 18.46, '%', 1],[43.0, 17.13, '%', 0]

SH
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24161, 24162)
 And, theall solution-processed non-doped ZnO/ZnOAl combination layer presents fairlygood electron selective transportation property for SHJ<missing VAR> solar cell, resultingin an efficiency of 17.13%.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 18.46, '%', 1],[19.0, 17.13, '%', 0]

SH
###Solution-processed ZnO as the efficient passivation and electron selective layer of silicon solar cells|Jiangnan Ding,Yurong Zhou,Gangqiang Dong,Ming Liu,Donghong Yu,Fengzhen Liu###
(24237, 24238)
 The carrier transport based on energy band diagramsof the rear side of the solar cells has been discussed related to theperformance of the SHJ<missing VAR> solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 18.46, '%', 2],[56.0, 17.13, '%', 1]

In
###Optoelectronic Reciprocity in Hot Carrier Solar Cells with Ideal Energy Selective Contacts|Andreas Pusch,Milos Dubajic,Michael P. Nielsen,Gavin J. Conibeer,Stephen P. Bremner,Nicholas J. Ekins-Daukes###
(24398, 24398)
 In this work, we discuss how thesignatures of a functioning hot carrier device should manifest experimentallyin electro-luminescence and dark I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Optoelectronic Reciprocity in Hot Carrier Solar Cells with Ideal Energy Selective Contacts|Andreas Pusch,Milos Dubajic,Michael P. Nielsen,Gavin J. Conibeer,Stephen P. Bremner,Nicholas J. Ekins-Daukes###
(24445, 24445)
 In this work, we discuss how thesignatures of a functioning hot carrier device should manifest experimentallyin electro-luminescence and dark I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Optoelectronic Reciprocity in Hot Carrier Solar Cells with Ideal Energy Selective Contacts|Andreas Pusch,Milos Dubajic,Michael P. Nielsen,Gavin J. Conibeer,Stephen P. Bremner,Nicholas J. Ekins-Daukes###
(24447, 24447)
 In this work, we discuss how thesignatures of a functioning hot carrier device should manifest experimentallyin electro-luminescence and dark I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoSi2N4
###Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications|Che Chen Tho,Chenjiang Yu,Qin Tang,Qianqian Wang,Tong Su,Zhuoer Feng,Qingyun Wu,C. V. Nguyen,Wee-Liat Ong,Shi-Jun Liang,San-Dong Guo,Liemao Cao,Shengli Zhang,Shengyuan A. Yang,Lay Kee Ang,Guangzhao Wang,Yee Sin Ang###
(24660, 24664)
Cataloguing MoSi2N4 and WSi2N4 van der Waals Heterostructures An Exceptional Material Platform for Excitonic Solar Cell Applications.
Featurization terminated normally.
0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 51, 'types', 4],[317.0, 2, 'D', 4],[381.0, 20, '%', 5],[462.0, 40, '%', 7],[483.0, 2, 'D', 7]

WSi2N4
###Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications|Che Chen Tho,Chenjiang Yu,Qin Tang,Qianqian Wang,Tong Su,Zhuoer Feng,Qingyun Wu,C. V. Nguyen,Wee-Liat Ong,Shi-Jun Liang,San-Dong Guo,Liemao Cao,Shengli Zhang,Shengyuan A. Yang,Lay Kee Ang,Guangzhao Wang,Yee Sin Ang###
(24668, 24672)
Cataloguing MoSi2N4 and WSi2N4 van der Waals Heterostructures An Exceptional Material Platform for Excitonic Solar Cell Applications.
Featurization terminated normally.
0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 51, 'types', 4],[309.0, 2, 'D', 4],[373.0, 20, '%', 5],[454.0, 40, '%', 7],[475.0, 2, 'D', 7]

Hs
###Cataloguing MoSi$_2$N$_4$ and WSi$_2$N$_4$ van der Waals Heterostructures: An Exceptional Material Platform for Excitonic Solar Cell Applications|Che Chen Tho,Chenjiang Yu,Qin Tang,Qianqian Wang,Tong Su,Zhuoer Feng,Qingyun Wu,C. V. Nguyen,Wee-Liat Ong,Shi-Jun Liang,San-Dong Guo,Liemao Cao,Shengli Zhang,Shengyuan A. Yang,Lay Kee Ang,Guangzhao Wang,Yee Sin Ang###
(24723, 24723)
 Two-dimensional (2D) materials van der Waals heterostructures (vdWHs)provides a revolutionary route towards high-performance solar energy conversiondevices beyond the conventional silicon-based pn junction solar cells.
EXCEPTION 3: IndexError for Hs
WHs
[200.0, 51, 'types', 3],[258.0, 2, 'D', 3],[322.0, 20, '%', 4],[403.0, 40, '%', 6],[424.0, 2, 'D', 6]

CuSbSe2
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25252, 25255)
Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CG<missing VAR>S back surface layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[413.0, 43.77, '%', 6],[434.0, 27.74, '%', 6]

C
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25273, 25273)
Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CG<missing VAR>S back surface layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 43.77, '%', 6],[416.0, 27.74, '%', 6]

S
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25275, 25275)
Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CG<missing VAR>S back surface layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 43.77, '%', 6],[414.0, 27.74, '%', 6]

(CuSbSe2)
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25294, 25299)
 Ternary chalcostibite copper antimony selenide (CuSbSe2) is a promisingabsorber material for next generation thin film solar cells due to thenon-toxic nature, earth-abundance, low-cost fabrication technique, optimumbandgap and high optical absorption coefficient of CuSbSe2.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 43.77, '%', 5],[390.0, 27.74, '%', 5]

CuSbSe2
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25371, 25374)
 Ternary chalcostibite copper antimony selenide (CuSbSe2) is a promisingabsorber material for next generation thin film solar cells due to thenon-toxic nature, earth-abundance, low-cost fabrication technique, optimumbandgap and high optical absorption coefficient of CuSbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 43.77, '%', 5],[315.0, 27.74, '%', 5]

CuSbSe2
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25384, 25387)
 Conventional singleheterojunction CuSbSe2 solar cells suffer from high recombination rate at theinterfaces and the presence of a Schottky barrier at the back contact, whichlimit their power conversion efficiencies (PCEs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 43.77, '%', 4],[302.0, 27.74, '%', 4]

(PCEs)
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25446, 25450)
 Conventional singleheterojunction CuSbSe2 solar cells suffer from high recombination rate at theinterfaces and the presence of a Schottky barrier at the back contact, whichlimit their power conversion efficiencies (PCEs).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[218.0, 43.77, '%', 4],[239.0, 27.74, '%', 4]

In
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25453, 25453)
 In this study, we propose adual-heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2/p+-CG<missing VAR>S solar cell, having copper galliumselenide (CG<missing VAR>S) as the back surface field (BSF) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 43.77, '%', 3],[236.0, 27.74, '%', 3]

ZnSe
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25473, 25474)
 In this study, we propose adual-heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2/p+-CG<missing VAR>S solar cell, having copper galliumselenide (CG<missing VAR>S) as the back surface field (BSF) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 43.77, '%', 3],[215.0, 27.74, '%', 3]

CuSbSe2
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25478, 25481)
 In this study, we propose adual-heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2/p+-CG<missing VAR>S solar cell, having copper galliumselenide (CG<missing VAR>S) as the back surface field (BSF) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 43.77, '%', 3],[208.0, 27.74, '%', 3]

C
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25486, 25486)
 In this study, we propose adual-heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2/p+-CG<missing VAR>S solar cell, having copper galliumselenide (CG<missing VAR>S) as the back surface field (BSF) layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 43.77, '%', 3],[203.0, 27.74, '%', 3]

S
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25488, 25488)
 In this study, we propose adual-heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2/p+-CG<missing VAR>S solar cell, having copper galliumselenide (CG<missing VAR>S) as the back surface field (BSF) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 43.77, '%', 3],[201.0, 27.74, '%', 3]

C
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25505, 25505)
 In this study, we propose adual-heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2/p+-CG<missing VAR>S solar cell, having copper galliumselenide (CG<missing VAR>S) as the back surface field (BSF) layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 43.77, '%', 3],[184.0, 27.74, '%', 3]

S
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25507, 25507)
 In this study, we propose adual-heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2/p+-CG<missing VAR>S solar cell, having copper galliumselenide (CG<missing VAR>S) as the back surface field (BSF) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 43.77, '%', 3],[182.0, 27.74, '%', 3]

(BSF)
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25520, 25524)
 In this study, we propose adual-heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2/p+-CG<missing VAR>S solar cell, having copper galliumselenide (CG<missing VAR>S) as the back surface field (BSF) layer.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 43.77, '%', 3],[165.0, 27.74, '%', 3]

BSF
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25531, 25533)
 The BSF layer absorbslonger wavelength photons through a tail-states-assisted (T<missing VAR>SA) two-stepupconversion process, leading to enhanced conversion efficiency.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 43.77, '%', 2],[156.0, 27.74, '%', 2]

S
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25558, 25558)
 The BSF layer absorbslonger wavelength photons through a tail-states-assisted (T<missing VAR>SA) two-stepupconversion process, leading to enhanced conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 43.77, '%', 2],[131.0, 27.74, '%', 2]

SC
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25596, 25597)
 Numericalsimulations were carried out using SCAPS-1D<missing VAR> to investigate the performance ofthe proposed solar cell with respect to absorber layer thickness, dopingconcentrations and defect densities.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 43.77, '%', 1],[92.0, 27.74, '%', 1]

PS
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25599, 25600)
 Numericalsimulations were carried out using SCAPS-1D<missing VAR> to investigate the performance ofthe proposed solar cell with respect to absorber layer thickness, dopingconcentrations and defect densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 43.77, '%', 1],[89.0, 27.74, '%', 1]

PC
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25657, 25658)
 The simulation results exhibit PCE<missing VAR> as highas 43.77% for the dual-heterojunction solar cell as compared to 27.74% for thesingle heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2 counterpart.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 43.77, '%', 0],[31.0, 27.74, '%', 0]

ZnSe
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25703, 25704)
 The simulation results exhibit PCE<missing VAR> as highas 43.77% for the dual-heterojunction solar cell as compared to 27.74% for thesingle heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2 counterpart.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 43.77, '%', 0],[14.0, 27.74, '%', 0]

CuSbSe2
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25708, 25711)
 The simulation results exhibit PCE<missing VAR> as highas 43.77% for the dual-heterojunction solar cell as compared to 27.74% for thesingle heterojunction n<missing VAR>-ZnSe/p<missing VAR>-CuSbSe2 counterpart.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 43.77, '%', 0],[19.0, 27.74, '%', 0]

S
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25746, 25746)
 The dual-heterojunctionstructure has, therefore, the potential to approach the Shockley-Queisser (SQ)detailed balance limit and can lead to extremely high PCEs in emerging thinfilm solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 43.77, '%', 1],[57.0, 27.74, '%', 1]

PCEs
###Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer|Bipin Saha,Bipanko Kumar Mondal,Shaikh Khaled Mostaque,Mainul Hossain,Jaker Hossain###
(25769, 25771)
 The dual-heterojunctionstructure has, therefore, the potential to approach the Shockley-Queisser (SQ)detailed balance limit and can lead to extremely high PCEs in emerging thinfilm solar cells.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[101.0, 43.77, '%', 1],[80.0, 27.74, '%', 1]

(PV)
###Machine learning for accelerating the discovery of high performance low-cost solar cells: a systematic review|Satyam Bhatti,Habib Ullah Manzoor,Bruno Michel,Ruy Sebastian Bonilla,Richard Abrams,Ahmed Zoha,Sajjad Hussain,Rami Ghannam###
(25832, 25835)
 Solar photovoltaic (PV) technology has merged as an efficient and versatilemethod for converting the Suns<missing VAR> vast energy into electricity.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Machine learning for accelerating the discovery of high performance low-cost solar cells: a systematic review|Satyam Bhatti,Habib Ullah Manzoor,Bruno Michel,Ruy Sebastian Bonilla,Richard Abrams,Ahmed Zoha,Sajjad Hussain,Rami Ghannam###
(26013, 26013)
 Moreover, ArtificialIntelligence (AI) and Machine Learning (ML) techniques are touted as gamechangers in energy harvesting, especially in solar energy materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Machine learning for accelerating the discovery of high performance low-cost solar cells: a systematic review|Satyam Bhatti,Habib Ullah Manzoor,Bruno Michel,Ruy Sebastian Bonilla,Richard Abrams,Ahmed Zoha,Sajjad Hussain,Rami Ghannam###
(26058, 26058)
 In thisarticle, we systematically review a range of ML techniques for optimizing theperformance of low-cost solar cells for miniaturized electronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Machine learning for accelerating the discovery of high performance low-cost solar cells: a systematic review|Satyam Bhatti,Habib Ullah Manzoor,Bruno Michel,Ruy Sebastian Bonilla,Richard Abrams,Ahmed Zoha,Sajjad Hussain,Rami Ghannam###
(26153, 26153)
 In particular, this reviewcovers a broad range of ML techniques targeted at producing low-cost solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Machine learning for accelerating the discovery of high performance low-cost solar cells: a systematic review|Satyam Bhatti,Habib Ullah Manzoor,Bruno Michel,Ruy Sebastian Bonilla,Richard Abrams,Ahmed Zoha,Sajjad Hussain,Rami Ghannam###
(26242, 26242)
 In addition, our review reveals that the Gaussian Process Regression(GPR) ML technique with Bayesian Optimization (BO) enables the design of themost promising low-solar cell architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(BO)
###Machine learning for accelerating the discovery of high performance low-cost solar cells: a systematic review|Satyam Bhatti,Habib Ullah Manzoor,Bruno Michel,Ruy Sebastian Bonilla,Richard Abrams,Ahmed Zoha,Sajjad Hussain,Rami Ghannam###
(26281, 26284)
 In addition, our review reveals that the Gaussian Process Regression(GPR) ML technique with Bayesian Optimization (BO) enables the design of themost promising low-solar cell architecture.
Featurization successful!
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Analytical Device-Physics Framework for Non-Planar Solar Cells|T. Kirkpatrick,M. J. Burns,M. J. Naughton###
(26661, 26661)
 In addition, planar and non-planar solar cell performanceare simulated, based on a semi-empirical expression for short-circuit current,detailing variations in charge carrier transport and efficiency as a functionof geometry, thereby yielding insights into design criteria for solar cellarchitectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(26895, 26895)
 In this article, a novel hot wire oxidation-sublimation deposition (HWOSD)technique was developed to prepare molybdenum oxide (MoOx) thin films with highquality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 21.1, '%', 3],[251.0, 380, 'K', 4]

HWOS
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(26917, 26920)
 In this article, a novel hot wire oxidation-sublimation deposition (HWOSD)technique was developed to prepare molybdenum oxide (MoOx) thin films with highquality.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 21.1, '%', 3],[226.0, 380, 'K', 4]

Mo
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(26940, 26940)
 In this article, a novel hot wire oxidation-sublimation deposition (HWOSD)technique was developed to prepare molybdenum oxide (MoOx) thin films with highquality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 21.1, '%', 3],[206.0, 380, 'K', 4]

SH
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(26961, 26962)
 Silicon heterojunction (SHJ) solar cells with the HWOSD<missing VAR> MoOx as a holeselective transport layer (HSL) were fabricated.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 21.1, '%', 2],[184.0, 380, 'K', 3]

HWOS
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(26974, 26977)
 Silicon heterojunction (SHJ) solar cells with the HWOSD<missing VAR> MoOx as a holeselective transport layer (HSL) were fabricated.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 21.1, '%', 2],[169.0, 380, 'K', 3]

Mo
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(26980, 26980)
 Silicon heterojunction (SHJ) solar cells with the HWOSD<missing VAR> MoOx as a holeselective transport layer (HSL) were fabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 21.1, '%', 2],[166.0, 380, 'K', 3]

HS
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(26997, 26998)
 Silicon heterojunction (SHJ) solar cells with the HWOSD<missing VAR> MoOx as a holeselective transport layer (HSL) were fabricated.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 21.1, '%', 2],[148.0, 380, 'K', 3]

Mo
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27013, 27013)
 Thickness of the MoOx layerand annealing process of the solar cells were studied and optimized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 21.1, '%', 1],[133.0, 380, 'K', 2]

SH
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27066, 27067)
 A powerconversion efficiency up to 21.10% was achieved on a SHJ<missing VAR> solar cell using a14nm MoOx layer as the HSL<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 21.1, '%', 0],[79.0, 380, 'K', 1]

Mo
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27082, 27082)
 A powerconversion efficiency up to 21.10% was achieved on a SHJ<missing VAR> solar cell using a14nm MoOx layer as the HSL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 21.1, '%', 0],[64.0, 380, 'K', 1]

HS
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27091, 27092)
 A powerconversion efficiency up to 21.10% was achieved on a SHJ<missing VAR> solar cell using a14nm MoOx layer as the HSL<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 21.1, '%', 0],[54.0, 380, 'K', 1]

V
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27109, 27109)
 Dark current density-voltage-temperature (J<missing VAR>-V-T)characteristics of the SHJ<missing VAR> solar cell were measured at the temperatures from200K to 380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 21.1, '%', 1],[37.0, 380, 'K', 0]

SH
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27121, 27122)
 Dark current density-voltage-temperature (J<missing VAR>-V-T)characteristics of the SHJ<missing VAR> solar cell were measured at the temperatures from200K to 380K.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 21.1, '%', 1],[24.0, 380, 'K', 0]

K
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27143, 27143)
 Dark current density-voltage-temperature (J<missing VAR>-V-T)characteristics of the SHJ<missing VAR> solar cell were measured at the temperatures from200K to 380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 21.1, '%', 1],[3.0, 380, 'K', 0]

Mo
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27197, 27197)
 Transport processes including thermionic emission of electronsover the potential barrier and quantum assisted tunneling of holes through thegap states in the MoOx layer were proposed for the MoOx/n c-Si heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 21.1, '%', 2],[51.0, 380, 'K', 1]

Mo
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27210, 27210)
 Transport processes including thermionic emission of electronsover the potential barrier and quantum assisted tunneling of holes through thegap states in the MoOx layer were proposed for the MoOx/n c-Si heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 21.1, '%', 2],[64.0, 380, 'K', 1]

Si
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27217, 27217)
 Transport processes including thermionic emission of electronsover the potential barrier and quantum assisted tunneling of holes through thegap states in the MoOx layer were proposed for the MoOx/n c-Si heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 21.1, '%', 2],[71.0, 380, 'K', 1]

SH
###Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells|Fengchao Li,Yurong Zhou,Ming Liu,Gangqiang Dong,Fengzhen Liu,Wenjing Wang,Donghong Yu###
(27258, 27259)
The investigation of the transport mechanisms provides us a betterunderstanding of the characteristics of the novel SHJ<missing VAR> solar cells and it ishelpful for us to fully demonstrate the potential of such kind of solar cellsin the future.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 21.1, '%', 3],[112.0, 380, 'K', 2]

(Sb2S3)
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27358, 27363)
 The use of stibnite (Sb2S3) as sensitizers in the solid-state sensitizedsolar cells received considerable research interest during the transition ofthe millennium.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27443, 27444)
 However, the use of perovskite diminished the research in thefield and the potential of antimony chalcogenide (Sb2(S,Se)3) was not exploredthoroughly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27446, 27446)
 However, the use of perovskite diminished the research in thefield and the potential of antimony chalcogenide (Sb2(S,Se)3) was not exploredthoroughly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27448, 27448)
 However, the use of perovskite diminished the research in thefield and the potential of antimony chalcogenide (Sb2(S,Se)3) was not exploredthoroughly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27492, 27492)
 Although these materials also provide bandgap tuning likeperovskite by varying the composition of S and Se, it is not as popular asperovskite mainly because of the low efficiency of the solar cells based on it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27496, 27496)
 Although these materials also provide bandgap tuning likeperovskite by varying the composition of S and Se, it is not as popular asperovskite mainly because of the low efficiency of the solar cells based on it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27542, 27542)
In this paper, we present a landscape of the functional role of various deviceparameters on the performance of Sb2(S,Se)3 based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27582, 27583)
In this paper, we present a landscape of the functional role of various deviceparameters on the performance of Sb2(S,Se)3 based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27585, 27585)
In this paper, we present a landscape of the functional role of various deviceparameters on the performance of Sb2(S,Se)3 based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27587, 27587)
In this paper, we present a landscape of the functional role of various deviceparameters on the performance of Sb2(S,Se)3 based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27810, 27811)
 Using the detailednumerical simulation and analytical model we further identify the performanceoptimization map of Sb2(S,Se)3 based sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27813, 27813)
 Using the detailednumerical simulation and analytical model we further identify the performanceoptimization map of Sb2(S,Se)3 based sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Antimony Chalcogenide-based Solid State Sensitizers for Solar Cells: A Forgotten Hero or Low Potential Candidate|Sumanshu Agarwal,Harekrishna Yadav,Kundan Kumar###
(27815, 27815)
 Using the detailednumerical simulation and analytical model we further identify the performanceoptimization map of Sb2(S,Se)3 based sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27836, 27838)
III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 47, '%', 4],[304.0, 49, '%', 4],[346.0, 40, '%', 5],[435.0, 47, '%', 6],[456.0, 39, '%', 6],[563.0, 43, '%', 7]

V
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27840, 27840)
III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 47, '%', 4],[302.0, 49, '%', 4],[344.0, 40, '%', 5],[433.0, 47, '%', 6],[454.0, 39, '%', 6],[561.0, 43, '%', 7]

III
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27893, 27895)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 47, '%', 3],[247.0, 49, '%', 3],[289.0, 40, '%', 4],[378.0, 47, '%', 5],[399.0, 39, '%', 5],[506.0, 43, '%', 6]

V
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27897, 27897)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 47, '%', 3],[245.0, 49, '%', 3],[287.0, 40, '%', 4],[376.0, 47, '%', 5],[397.0, 39, '%', 5],[504.0, 43, '%', 6]

HB
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27911, 27912)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 47, '%', 3],[230.0, 49, '%', 3],[272.0, 40, '%', 4],[361.0, 47, '%', 5],[382.0, 39, '%', 5],[489.0, 43, '%', 6]

C
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27915, 27915)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 47, '%', 3],[227.0, 49, '%', 3],[269.0, 40, '%', 4],[358.0, 47, '%', 5],[379.0, 39, '%', 5],[486.0, 43, '%', 6]

Si
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27939, 27939)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 47, '%', 3],[203.0, 49, '%', 3],[245.0, 40, '%', 4],[334.0, 47, '%', 5],[355.0, 39, '%', 5],[462.0, 43, '%', 6]

III
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27946, 27948)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 47, '%', 3],[194.0, 49, '%', 3],[236.0, 40, '%', 4],[325.0, 47, '%', 5],[346.0, 39, '%', 5],[453.0, 43, '%', 6]

V
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27950, 27950)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 47, '%', 3],[192.0, 49, '%', 3],[234.0, 40, '%', 4],[323.0, 47, '%', 5],[344.0, 39, '%', 5],[451.0, 43, '%', 6]

HB
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27952, 27953)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 47, '%', 3],[189.0, 49, '%', 3],[231.0, 40, '%', 4],[320.0, 47, '%', 5],[341.0, 39, '%', 5],[448.0, 43, '%', 6]

SC
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27955, 27956)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 47, '%', 3],[186.0, 49, '%', 3],[228.0, 40, '%', 4],[317.0, 47, '%', 5],[338.0, 39, '%', 5],[445.0, 43, '%', 6]

Si
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27960, 27960)
 We propose a new triple-junction solar cell structure composed of a III-Vheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) stacked on top of, andseries-connected to, a Si solar cell (III-V-HBT<missing VAR>SC-on-Si).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 47, '%', 3],[182.0, 49, '%', 3],[224.0, 40, '%', 4],[313.0, 47, '%', 5],[334.0, 39, '%', 5],[441.0, 43, '%', 6]

HB
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27966, 27967)
 The HBT<missing VAR>SC is a novelthree-terminal device, whose viability has been recently experimentallydemonstrated.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 47, '%', 2],[175.0, 49, '%', 2],[217.0, 40, '%', 3],[306.0, 47, '%', 4],[327.0, 39, '%', 4],[434.0, 43, '%', 5]

SC
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(27969, 27970)
 The HBT<missing VAR>SC is a novelthree-terminal device, whose viability has been recently experimentallydemonstrated.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 47, '%', 2],[172.0, 49, '%', 2],[214.0, 40, '%', 3],[303.0, 47, '%', 4],[324.0, 39, '%', 4],[431.0, 43, '%', 5]

III
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28077, 28079)
 Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 47, '%', 0],[63.0, 49, '%', 0],[105.0, 40, '%', 1],[194.0, 47, '%', 2],[215.0, 39, '%', 2],[322.0, 43, '%', 3]

V
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28081, 28081)
 Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 47, '%', 0],[61.0, 49, '%', 0],[103.0, 40, '%', 1],[192.0, 47, '%', 2],[213.0, 39, '%', 2],[320.0, 43, '%', 3]

HB
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28083, 28084)
 Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 47, '%', 0],[58.0, 49, '%', 0],[100.0, 40, '%', 1],[189.0, 47, '%', 2],[210.0, 39, '%', 2],[317.0, 43, '%', 3]

SC
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28086, 28087)
 Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 47, '%', 0],[55.0, 49, '%', 0],[97.0, 40, '%', 1],[186.0, 47, '%', 2],[207.0, 39, '%', 2],[314.0, 43, '%', 3]

Si
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28091, 28091)
 Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 47, '%', 0],[51.0, 49, '%', 0],[93.0, 40, '%', 1],[182.0, 47, '%', 2],[203.0, 39, '%', 2],[310.0, 43, '%', 3]

III
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28114, 28116)
 Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 47, '%', 0],[26.0, 49, '%', 0],[68.0, 40, '%', 1],[157.0, 47, '%', 2],[178.0, 39, '%', 2],[285.0, 43, '%', 3]

V
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28118, 28118)
 Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 47, '%', 0],[24.0, 49, '%', 0],[66.0, 40, '%', 1],[155.0, 47, '%', 2],[176.0, 39, '%', 2],[283.0, 43, '%', 3]

Si
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28122, 28122)
 Here, we perform detailedbalance efficiency limit calculations under one-sun illumination that show thatthe absolute efficiency limit of a III-V-HBT<missing VAR>SC-on-Si device is the same as forthe conventional current-matched III-V-on-Si triple-junction (47% assumingblack-body spectrum, 49% with AM1.5G).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 47, '%', 0],[20.0, 49, '%', 0],[62.0, 40, '%', 1],[151.0, 47, '%', 2],[172.0, 39, '%', 2],[279.0, 43, '%', 3]

III
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28198, 28200)
 However, the range of band-gap energiesfor which the efficiency limit is above 40% is much wider in theIII-V-HBT<missing VAR>SC-on-Si stack case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 47, '%', 1],[56.0, 49, '%', 1],[14.0, 40, '%', 0],[73.0, 47, '%', 1],[94.0, 39, '%', 1],[201.0, 43, '%', 2]

V
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28202, 28202)
 However, the range of band-gap energiesfor which the efficiency limit is above 40% is much wider in theIII-V-HBT<missing VAR>SC-on-Si stack case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 47, '%', 1],[60.0, 49, '%', 1],[18.0, 40, '%', 0],[71.0, 47, '%', 1],[92.0, 39, '%', 1],[199.0, 43, '%', 2]

HB
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28204, 28205)
 However, the range of band-gap energiesfor which the efficiency limit is above 40% is much wider in theIII-V-HBT<missing VAR>SC-on-Si stack case.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 47, '%', 1],[62.0, 49, '%', 1],[20.0, 40, '%', 0],[68.0, 47, '%', 1],[89.0, 39, '%', 1],[196.0, 43, '%', 2]

SC
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28207, 28208)
 However, the range of band-gap energiesfor which the efficiency limit is above 40% is much wider in theIII-V-HBT<missing VAR>SC-on-Si stack case.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 47, '%', 1],[65.0, 49, '%', 1],[23.0, 40, '%', 0],[65.0, 47, '%', 1],[86.0, 39, '%', 1],[193.0, 43, '%', 2]

Si
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28212, 28212)
 However, the range of band-gap energiesfor which the efficiency limit is above 40% is much wider in theIII-V-HBT<missing VAR>SC-on-Si stack case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 47, '%', 1],[70.0, 49, '%', 1],[28.0, 40, '%', 0],[61.0, 47, '%', 1],[82.0, 39, '%', 1],[189.0, 43, '%', 2]

GaInP/GaAs
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28239, 28244)
 From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[110.0, 47, '%', 2],[97.0, 49, '%', 2],[55.0, 40, '%', 1],[29.0, 47, '%', 0],[50.0, 39, '%', 0],[157.0, 43, '%', 1]

HB
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28280, 28281)
 From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 47, '%', 2],[138.0, 49, '%', 2],[96.0, 40, '%', 1],[7.0, 47, '%', 0],[13.0, 39, '%', 0],[120.0, 43, '%', 1]

SC
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28283, 28284)
 From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 47, '%', 2],[141.0, 49, '%', 2],[99.0, 40, '%', 1],[10.0, 47, '%', 0],[10.0, 39, '%', 0],[117.0, 43, '%', 1]

Si
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28288, 28288)
 From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 47, '%', 2],[146.0, 49, '%', 2],[104.0, 40, '%', 1],[15.0, 47, '%', 0],[6.0, 39, '%', 0],[113.0, 43, '%', 1]

III
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28306, 28308)
 From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 47, '%', 2],[164.0, 49, '%', 2],[122.0, 40, '%', 1],[33.0, 47, '%', 0],[12.0, 39, '%', 0],[93.0, 43, '%', 1]

V
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28310, 28310)
 From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 47, '%', 2],[168.0, 49, '%', 2],[126.0, 40, '%', 1],[37.0, 47, '%', 0],[16.0, 39, '%', 0],[91.0, 43, '%', 1]

Si
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28314, 28314)
 From a technological point of view, thelattice-matched GaInP/GaAs combination is particularly interesting, which hasan AM1.5G efficiency limit of 47% with the HBT<missing VAR>SC-on-Si structure and 39% if thecurrent-matched III-V-on-Si triple junction is considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 47, '%', 2],[172.0, 49, '%', 2],[130.0, 40, '%', 1],[41.0, 47, '%', 0],[20.0, 39, '%', 0],[87.0, 43, '%', 1]

HB
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28345, 28346)
 Moreover, we showthat interconnecting the terminals of the HBT<missing VAR>SC to achieve a two-terminalGaInP/GaAs-HBT<missing VAR>SC-on-Si device only reduces the efficiency limit by threepoints, to 43%.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 47, '%', 3],[203.0, 49, '%', 3],[161.0, 40, '%', 2],[72.0, 47, '%', 1],[51.0, 39, '%', 1],[55.0, 43, '%', 0]

SC
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28348, 28349)
 Moreover, we showthat interconnecting the terminals of the HBT<missing VAR>SC to achieve a two-terminalGaInP/GaAs-HBT<missing VAR>SC-on-Si device only reduces the efficiency limit by threepoints, to 43%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 47, '%', 3],[206.0, 49, '%', 3],[164.0, 40, '%', 2],[75.0, 47, '%', 1],[54.0, 39, '%', 1],[52.0, 43, '%', 0]

GaInP/GaAs
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28362, 28367)
 Moreover, we showthat interconnecting the terminals of the HBT<missing VAR>SC to achieve a two-terminalGaInP/GaAs-HBT<missing VAR>SC-on-Si device only reduces the efficiency limit by threepoints, to 43%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[233.0, 47, '%', 3],[220.0, 49, '%', 3],[178.0, 40, '%', 2],[89.0, 47, '%', 1],[68.0, 39, '%', 1],[34.0, 43, '%', 0]

HB
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28369, 28370)
 Moreover, we showthat interconnecting the terminals of the HBT<missing VAR>SC to achieve a two-terminalGaInP/GaAs-HBT<missing VAR>SC-on-Si device only reduces the efficiency limit by threepoints, to 43%.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 47, '%', 3],[227.0, 49, '%', 3],[185.0, 40, '%', 2],[96.0, 47, '%', 1],[75.0, 39, '%', 1],[31.0, 43, '%', 0]

SC
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28372, 28373)
 Moreover, we showthat interconnecting the terminals of the HBT<missing VAR>SC to achieve a two-terminalGaInP/GaAs-HBT<missing VAR>SC-on-Si device only reduces the efficiency limit by threepoints, to 43%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 47, '%', 3],[230.0, 49, '%', 3],[188.0, 40, '%', 2],[99.0, 47, '%', 1],[78.0, 39, '%', 1],[28.0, 43, '%', 0]

Si
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28377, 28377)
 Moreover, we showthat interconnecting the terminals of the HBT<missing VAR>SC to achieve a two-terminalGaInP/GaAs-HBT<missing VAR>SC-on-Si device only reduces the efficiency limit by threepoints, to 43%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 47, '%', 3],[235.0, 49, '%', 3],[193.0, 40, '%', 2],[104.0, 47, '%', 1],[83.0, 39, '%', 1],[24.0, 43, '%', 0]

As
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28405, 28405)
 As a result, the GaInP/GaAs-HBT<missing VAR>SC-on-Si solar cell becomes apromising device for two-terminal, high-efficiency one-sun operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 47, '%', 4],[263.0, 49, '%', 4],[221.0, 40, '%', 3],[132.0, 47, '%', 2],[111.0, 39, '%', 2],[4.0, 43, '%', 1]

GaInP/GaAs
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28414, 28419)
 As a result, the GaInP/GaAs-HBT<missing VAR>SC-on-Si solar cell becomes apromising device for two-terminal, high-efficiency one-sun operation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[285.0, 47, '%', 4],[272.0, 49, '%', 4],[230.0, 40, '%', 3],[141.0, 47, '%', 2],[120.0, 39, '%', 2],[13.0, 43, '%', 1]

HB
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28421, 28422)
 As a result, the GaInP/GaAs-HBT<missing VAR>SC-on-Si solar cell becomes apromising device for two-terminal, high-efficiency one-sun operation.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 47, '%', 4],[279.0, 49, '%', 4],[237.0, 40, '%', 3],[148.0, 47, '%', 2],[127.0, 39, '%', 2],[20.0, 43, '%', 1]

SC
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28424, 28425)
 As a result, the GaInP/GaAs-HBT<missing VAR>SC-on-Si solar cell becomes apromising device for two-terminal, high-efficiency one-sun operation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 47, '%', 4],[282.0, 49, '%', 4],[240.0, 40, '%', 3],[151.0, 47, '%', 2],[130.0, 39, '%', 2],[23.0, 43, '%', 1]

Si
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28429, 28429)
 As a result, the GaInP/GaAs-HBT<missing VAR>SC-on-Si solar cell becomes apromising device for two-terminal, high-efficiency one-sun operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 47, '%', 4],[287.0, 49, '%', 4],[245.0, 40, '%', 3],[156.0, 47, '%', 2],[135.0, 39, '%', 2],[28.0, 43, '%', 1]

III
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28494, 28496)
 For it toalso be cost-effective, low-cost technologies must be applied to the III-Vmaterial growth, such as high-throughput epitaxy or sequential growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 47, '%', 5],[352.0, 49, '%', 5],[310.0, 40, '%', 4],[221.0, 47, '%', 3],[200.0, 39, '%', 3],[93.0, 43, '%', 2]

V
###III-V-on-silicon triple-junction based on the heterojunction bipolar transistor solar cell concept|E. Antolin,M. H. Zehender,S. A. Svatek,P. G. Linares,A. Marti###
(28498, 28498)
 For it toalso be cost-effective, low-cost technologies must be applied to the III-Vmaterial growth, such as high-throughput epitaxy or sequential growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 47, '%', 5],[356.0, 49, '%', 5],[314.0, 40, '%', 4],[225.0, 47, '%', 3],[204.0, 39, '%', 3],[97.0, 43, '%', 2]

In
###Towards the efficiency limits of silicon solar cells: how thin is too thin?|Piotr Kowalczewski,Lucio Claudio Andreani###
(28630, 28630)
 In this work, weuse a model single-junction solar cell to calculate the limits of energyconversion efficiency and estimate the optimal absorber thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 1, ',', 1],[74.0, 40, 'and', 1],[76.0, 500, ',', 1],[95.0, 29, '%', 1],[123.0, 40, ',', 2],[301.0, 25.6, '%', 5]

In
###Towards the efficiency limits of silicon solar cells: how thin is too thin?|Piotr Kowalczewski,Lucio Claudio Andreani###
(28729, 28729)
 In this regard, we argue that decreasing thethickness below around 40,mumathrmm<missing VAR> is counter-productive, as itsignificantly reduces the maximum achievable efficiency, even when optimallight trapping is implemented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 1, ',', 3],[25.0, 40, 'and', 1],[23.0, 500, ',', 1],[4.0, 29, '%', 1],[24.0, 40, ',', 0],[202.0, 25.6, '%', 3]

In
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29202, 29202)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 13, 'well', 0],[94.0, 4, ',', 0],[155.0, 30, '%', 1]

GaAs
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29233, 29234)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 13, 'well', 0],[62.0, 4, ',', 0],[123.0, 30, '%', 1]

InP
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29237, 29238)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 13, 'well', 0],[58.0, 4, ',', 0],[119.0, 30, '%', 1]

CdTe
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29241, 29242)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 13, 'well', 0],[54.0, 4, ',', 0],[115.0, 30, '%', 1]

SiH
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29247, 29248)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 13, 'well', 0],[48.0, 4, ',', 0],[109.0, 30, '%', 1]

CuInSe2
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29251, 29254)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 13, 'well', 0],[42.0, 4, ',', 0],[103.0, 30, '%', 1]

CuGaSe2
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29257, 29260)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 13, 'well', 0],[36.0, 4, ',', 0],[97.0, 30, '%', 1]

CuInGaSe2
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29263, 29267)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 13, 'well', 0],[29.0, 4, ',', 0],[90.0, 30, '%', 1]

Cu2ZnSnSe4
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29270, 29275)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 13, 'well', 0],[21.0, 4, ',', 0],[82.0, 30, '%', 1]

Cu2ZnSnS4
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29278, 29283)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 13, 'well', 0],[13.0, 4, ',', 0],[74.0, 30, '%', 1]

Sn
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29290, 29290)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 13, 'well', 0],[6.0, 4, ',', 0],[67.0, 30, '%', 1]

S
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29292, 29292)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 13, 'well', 0],[4.0, 4, ',', 0],[65.0, 30, '%', 1]

Se
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29294, 29294)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 13, 'well', 0],[2.0, 4, ',', 0],[63.0, 30, '%', 1]

Cu2ZnGeSe4
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29299, 29304)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0.125,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 13, 'well', 0],[3.0, 4, ',', 0],[53.0, 30, '%', 1]

CH3NH3PbI3
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29307, 29315)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 13, 'well', 0],[11.0, 4, ',', 0],[42.0, 30, '%', 1]

H2
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29322, 29323)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 13, 'well', 0],[26.0, 4, ',', 0],[34.0, 30, '%', 1]

I3
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29327, 29328)
 In particular, we haveestimated the maximum efficiencies of 13 well-studied solar cell materials[GaAs, InP, CdTe, a-SiH, CuInSe2, CuGaSe2, CuInGaSe2, Cu2ZnSnSe4, Cu2ZnSnS4,Cu2ZnSn(S,Se)4, Cu2ZnGeSe4, CH3NH3PbI3, HC(NH2)2PbI3] in a 1-um-thick physicallimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 13, 'well', 0],[31.0, 4, ',', 0],[29.0, 30, '%', 1]

GaAs
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29384, 29385)
 Our calculation shows that over 30% efficiencies can be achieved forabsorber layers with sharp absorption edges (GaAs, InP, CdTe, CuInGaSe2,Cu2ZnGeSe4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 13, 'well', 1],[88.0, 4, ',', 1],[27.0, 30, '%', 0]

InP
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29388, 29389)
 Our calculation shows that over 30% efficiencies can be achieved forabsorber layers with sharp absorption edges (GaAs, InP, CdTe, CuInGaSe2,Cu2ZnGeSe4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 13, 'well', 1],[92.0, 4, ',', 1],[31.0, 30, '%', 0]

CdTe
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29392, 29393)
 Our calculation shows that over 30% efficiencies can be achieved forabsorber layers with sharp absorption edges (GaAs, InP, CdTe, CuInGaSe2,Cu2ZnGeSe4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 13, 'well', 1],[96.0, 4, ',', 1],[35.0, 30, '%', 0]

CuInGaSe2
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29396, 29400)
 Our calculation shows that over 30% efficiencies can be achieved forabsorber layers with sharp absorption edges (GaAs, InP, CdTe, CuInGaSe2,Cu2ZnGeSe4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 13, 'well', 1],[100.0, 4, ',', 1],[39.0, 30, '%', 0]

Se4
###Maximum efficiencies and performance limiting factors of inorganic and hybrid perovskite solar cells|Yoshitsune Kato,Shohei Fujimoto,Masayuki Kozawa,Hiroyuki Fujiwara###
(29408, 29409)
 Our calculation shows that over 30% efficiencies can be achieved forabsorber layers with sharp absorption edges (GaAs, InP, CdTe, CuInGaSe2,Cu2ZnGeSe4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 13, 'well', 1],[112.0, 4, ',', 1],[51.0, 30, '%', 0]

II
###Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(29530, 29531)
Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 30, '%', 5],[358.0, 50, '%', 5],[601.0, 5, '%', 8],[606.0, 10, '%', 8]

GaSb
###Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(29533, 29534)
Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 30, '%', 5],[355.0, 50, '%', 5],[598.0, 5, '%', 8],[603.0, 10, '%', 8]

GaAs
###Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(29560, 29561)
Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 30, '%', 5],[328.0, 50, '%', 5],[571.0, 5, '%', 8],[576.0, 10, '%', 8]

GaSb/GaAs
###Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(29650, 29654)
 We focuse on a stack of strain-compensated GaSb/GaAs type-II Q<missing VAR>Ds.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[230.0, 30, '%', 3],[235.0, 50, '%', 3],[478.0, 5, '%', 6],[483.0, 10, '%', 6]

II
###Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(29658, 29659)
 We focuse on a stack of strain-compensated GaSb/GaAs type-II Q<missing VAR>Ds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 30, '%', 3],[230.0, 50, '%', 3],[473.0, 5, '%', 6],[478.0, 10, '%', 6]

Ds
###Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(29662, 29662)
 We focuse on a stack of strain-compensated GaSb/GaAs type-II Q<missing VAR>Ds.
EXCEPTION 3: IndexError for Ds
GaSb/GaAs
[222.0, 30, '%', 3],[227.0, 50, '%', 3],[470.0, 5, '%', 6],[475.0, 10, '%', 6]

CdS/CdTe
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(30764, 30768)
Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[163.0, 18.3, '%', 3],[182.0, 1000, 'nm', 3],[195.0, 60, 'nm', 3],[313.0, 31.8, '%', 5],[343.0, 50, 'nm', 5],[369.0, 200, 'nm', 5],[408.0, 3000, 'nm', 5],[411.0, 1000, 'nm', 5]

In
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(30781, 30781)
 In this paper we study CdS/CdTe solar cells by means of AM<missing VAR>PS-1D<missing VAR> software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 18.3, '%', 2],[169.0, 1000, 'nm', 2],[182.0, 60, 'nm', 2],[300.0, 31.8, '%', 4],[330.0, 50, 'nm', 4],[356.0, 200, 'nm', 4],[395.0, 3000, 'nm', 4],[398.0, 1000, 'nm', 4]

CdS/CdTe
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(30791, 30795)
 In this paper we study CdS/CdTe solar cells by means of AM<missing VAR>PS-1D<missing VAR> software.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[136.0, 18.3, '%', 2],[155.0, 1000, 'nm', 2],[168.0, 60, 'nm', 2],[286.0, 31.8, '%', 4],[316.0, 50, 'nm', 4],[342.0, 200, 'nm', 4],[381.0, 3000, 'nm', 4],[384.0, 1000, 'nm', 4]

PS
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(30809, 30810)
 In this paper we study CdS/CdTe solar cells by means of AM<missing VAR>PS-1D<missing VAR> software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 18.3, '%', 2],[140.0, 1000, 'nm', 2],[153.0, 60, 'nm', 2],[271.0, 31.8, '%', 4],[301.0, 50, 'nm', 4],[327.0, 200, 'nm', 4],[366.0, 3000, 'nm', 4],[369.0, 1000, 'nm', 4]

CdS/CdTe
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(30852, 30856)
First we study the effect of thickness of semiconductor layers on the outputparameters of the CdS/CdTe solar cell, such as density of short-circuitcurrent, open circuit voltage, fill factor and efficiency.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[75.0, 18.3, '%', 1],[94.0, 1000, 'nm', 1],[107.0, 60, 'nm', 1],[225.0, 31.8, '%', 3],[255.0, 50, 'nm', 3],[281.0, 200, 'nm', 3],[320.0, 3000, 'nm', 3],[323.0, 1000, 'nm', 3]

CdS/CdTe
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(30916, 30920)
 Numerical simulationshows that the highest efficiency of single-junction CdS/CdTe solar cell equalto 18.3% is achieved when the CdTe layer thickness is 1000 nm and a CdS layeris 60 nm.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[11.0, 18.3, '%', 0],[30.0, 1000, 'nm', 0],[43.0, 60, 'nm', 0],[161.0, 31.8, '%', 2],[191.0, 50, 'nm', 2],[217.0, 200, 'nm', 2],[256.0, 3000, 'nm', 2],[259.0, 1000, 'nm', 2]

CdTe
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(30942, 30943)
 Numerical simulationshows that the highest efficiency of single-junction CdS/CdTe solar cell equalto 18.3% is achieved when the CdTe layer thickness is 1000 nm and a CdS layeris 60 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 18.3, '%', 0],[7.0, 1000, 'nm', 0],[20.0, 60, 'nm', 0],[138.0, 31.8, '%', 2],[168.0, 50, 'nm', 2],[194.0, 200, 'nm', 2],[233.0, 3000, 'nm', 2],[236.0, 1000, 'nm', 2]

CdS
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(30956, 30957)
 Numerical simulationshows that the highest efficiency of single-junction CdS/CdTe solar cell equalto 18.3% is achieved when the CdTe layer thickness is 1000 nm and a CdS layeris 60 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 18.3, '%', 0],[6.0, 1000, 'nm', 0],[6.0, 60, 'nm', 0],[124.0, 31.8, '%', 2],[154.0, 50, 'nm', 2],[180.0, 200, 'nm', 2],[219.0, 3000, 'nm', 2],[222.0, 1000, 'nm', 2]

CdS
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(31099, 31100)
 Numericalsimulations show that its highest efficiency in 31.8% can be obtained when thethickness of CdS p<missing VAR>-layer is equal to 50 nm, and the thickness of the CdSn<missing VAR>-layer is equal to 200 nm, while thicknesses of the CdTe n<missing VAR>-layer and CdTep<missing VAR>-layer are kept fixed and equal to 3000 nm and 1000 nm, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 18.3, '%', 2],[149.0, 1000, 'nm', 2],[136.0, 60, 'nm', 2],[18.0, 31.8, '%', 0],[11.0, 50, 'nm', 0],[37.0, 200, 'nm', 0],[76.0, 3000, 'nm', 0],[79.0, 1000, 'nm', 0]

CdS
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(31124, 31125)
 Numericalsimulations show that its highest efficiency in 31.8% can be obtained when thethickness of CdS p<missing VAR>-layer is equal to 50 nm, and the thickness of the CdSn<missing VAR>-layer is equal to 200 nm, while thicknesses of the CdTe n<missing VAR>-layer and CdTep<missing VAR>-layer are kept fixed and equal to 3000 nm and 1000 nm, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 18.3, '%', 2],[174.0, 1000, 'nm', 2],[161.0, 60, 'nm', 2],[43.0, 31.8, '%', 0],[13.0, 50, 'nm', 0],[12.0, 200, 'nm', 0],[51.0, 3000, 'nm', 0],[54.0, 1000, 'nm', 0]

CdTe
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(31148, 31149)
 Numericalsimulations show that its highest efficiency in 31.8% can be obtained when thethickness of CdS p<missing VAR>-layer is equal to 50 nm, and the thickness of the CdSn<missing VAR>-layer is equal to 200 nm, while thicknesses of the CdTe n<missing VAR>-layer and CdTep<missing VAR>-layer are kept fixed and equal to 3000 nm and 1000 nm, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 18.3, '%', 2],[198.0, 1000, 'nm', 2],[185.0, 60, 'nm', 2],[67.0, 31.8, '%', 0],[37.0, 50, 'nm', 0],[11.0, 200, 'nm', 0],[27.0, 3000, 'nm', 0],[30.0, 1000, 'nm', 0]

CdTe
###Simulation of the Efficiency of CdS/CdTe Tandem Multi-Junction Solar Cells|Ashrafalsadat S. Mirkamali,Khikmat Kh. Muminov###
(31157, 31158)
 Numericalsimulations show that its highest efficiency in 31.8% can be obtained when thethickness of CdS p<missing VAR>-layer is equal to 50 nm, and the thickness of the CdSn<missing VAR>-layer is equal to 200 nm, while thicknesses of the CdTe n<missing VAR>-layer and CdTep<missing VAR>-layer are kept fixed and equal to 3000 nm and 1000 nm, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 18.3, '%', 2],[207.0, 1000, 'nm', 2],[194.0, 60, 'nm', 2],[76.0, 31.8, '%', 0],[46.0, 50, 'nm', 0],[20.0, 200, 'nm', 0],[18.0, 3000, 'nm', 0],[21.0, 1000, 'nm', 0]

OS
###Relating Band Edge DOS Occupancy Statistics Associated Excited State Electrons Entropy Generation to Free Energy Loss and Intrinsic Voc Deficit of Solar Cells|Like Huang###
(31200, 31201)
Relating Band Edge D<missing VAR>OS Occupancy Statistics Associated Excited State Electrons Entropy Generation to Free Energy Loss and Intrinsic Voc Deficit of Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Relating Band Edge DOS Occupancy Statistics Associated Excited State Electrons Entropy Generation to Free Energy Loss and Intrinsic Voc Deficit of Solar Cells|Like Huang###
(31460, 31460)
 This work relates theenergy band edge electronic density of states (D<missing VAR>OS) of semiconductor absorberand transport layer, excited/transfer state electronic entropy tothermodynamically inevitable energy loss during photoelectric conversion insolar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Relating Band Edge DOS Occupancy Statistics Associated Excited State Electrons Entropy Generation to Free Energy Loss and Intrinsic Voc Deficit of Solar Cells|Like Huang###
(31578, 31579)
 On accounts of the basic limitations of thermodynamic laws on theenergy conversion process, this work reveals a hidden variable that affects thephotovoltaic performance and puts forward the band edge D<missing VAR>OS engineering as anew dimension in performance optimization of solar cell apart from thetraditional material and defect passivation engineering, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Relating Band Edge DOS Occupancy Statistics Associated Excited State Electrons Entropy Generation to Free Energy Loss and Intrinsic Voc Deficit of Solar Cells|Like Huang###
(31643, 31644)
 This workhighlights the great importance of D<missing VAR>OS engineering for further improving theperformance of any solar cell devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Semiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells|Marco Bernardi,Maurizia Palummo,Jeffrey C. Grossman###
(31815, 31816)
 Usingfirst-principles density functional theory and many-body calculations, wedemonstrate that monolayers of hexagonal BN and graphene (CBN) combined withcommonly used acceptors such as PCBM<missing VAR> fullerene or semiconducting carbonnanotubes can provide excitonic solar cells with tunable absorber gap,donor-acceptor interface band alignment, and power conversion efficiency, aswell as novel device architectures.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 20, '%', 1]

(CBN)
###Semiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells|Marco Bernardi,Maurizia Palummo,Jeffrey C. Grossman###
(31822, 31826)
 Usingfirst-principles density functional theory and many-body calculations, wedemonstrate that monolayers of hexagonal BN and graphene (CBN) combined withcommonly used acceptors such as PCBM<missing VAR> fullerene or semiconducting carbonnanotubes can provide excitonic solar cells with tunable absorber gap,donor-acceptor interface band alignment, and power conversion efficiency, aswell as novel device architectures.
Featurization successful!
0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 20, '%', 1]

PCB
###Semiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells|Marco Bernardi,Maurizia Palummo,Jeffrey C. Grossman###
(31843, 31845)
 Usingfirst-principles density functional theory and many-body calculations, wedemonstrate that monolayers of hexagonal BN and graphene (CBN) combined withcommonly used acceptors such as PCBM<missing VAR> fullerene or semiconducting carbonnanotubes can provide excitonic solar cells with tunable absorber gap,donor-acceptor interface band alignment, and power conversion efficiency, aswell as novel device architectures.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 20, '%', 1]

CBN
###Semiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells|Marco Bernardi,Maurizia Palummo,Jeffrey C. Grossman###
(31921, 31923)
 For the case of CBN-PCBM<missing VAR> devices, wepredict the limit of power conversion efficiencies to be in the 10 - 20% rangedepending on the CBN monolayer structure.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 20, '%', 0]

PCB
###Semiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells|Marco Bernardi,Maurizia Palummo,Jeffrey C. Grossman###
(31925, 31927)
 For the case of CBN-PCBM<missing VAR> devices, wepredict the limit of power conversion efficiencies to be in the 10 - 20% rangedepending on the CBN monolayer structure.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 20, '%', 0]

CBN
###Semiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells|Marco Bernardi,Maurizia Palummo,Jeffrey C. Grossman###
(31974, 31976)
 For the case of CBN-PCBM<missing VAR> devices, wepredict the limit of power conversion efficiencies to be in the 10 - 20% rangedepending on the CBN monolayer structure.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 20, '%', 0]

Si
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32412, 32412)
Computer simulation of a-Si/c<missing VAR>-Si heterojunction solar cell with high conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 21.849, '%', 5],[324.0, 0.866, ',', 5],[330.0, 0.861, 'V', 5],[336.0, 29.32, 'mA', 5]

Si
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32416, 32416)
Computer simulation of a-Si/c<missing VAR>-Si heterojunction solar cell with high conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 21.849, '%', 5],[320.0, 0.866, ',', 5],[326.0, 0.861, 'V', 5],[332.0, 29.32, 'mA', 5]

P
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32451, 32451)
 The p<missing VAR>-type amorphous/ n<missing VAR>-type crystalline silicon (P+ a-Si/N+ c<missing VAR>-Si)heterojunction was simulated for developing the solar cells with highconversion efficiency and low cost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 21.849, '%', 4],[285.0, 0.866, ',', 4],[291.0, 0.861, 'V', 4],[297.0, 29.32, 'mA', 4]

N
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32458, 32458)
 The p<missing VAR>-type amorphous/ n<missing VAR>-type crystalline silicon (P+ a-Si/N+ c<missing VAR>-Si)heterojunction was simulated for developing the solar cells with highconversion efficiency and low cost.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 21.849, '%', 4],[278.0, 0.866, ',', 4],[284.0, 0.861, 'V', 4],[290.0, 29.32, 'mA', 4]

Si
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32463, 32463)
 The p<missing VAR>-type amorphous/ n<missing VAR>-type crystalline silicon (P+ a-Si/N+ c<missing VAR>-Si)heterojunction was simulated for developing the solar cells with highconversion efficiency and low cost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 21.849, '%', 4],[273.0, 0.866, ',', 4],[279.0, 0.861, 'V', 4],[285.0, 29.32, 'mA', 4]

O
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32529, 32529)
 The characteristic of such cells withdifferent work function of transparent conductive oxide (T<missing VAR>CO) were calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 21.849, '%', 3],[207.0, 0.866, ',', 3],[213.0, 0.861, 'V', 3],[219.0, 29.32, 'mA', 3]

Si
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32596, 32596)
 Our resultsshow that the a-Si/c<missing VAR>-Si heterojunction is hypersensitive to the T<missing VAR>CO workfunction, and the T<missing VAR>CO work function should be large enough in order to achievehigh conversion efficiency for P+ a-SiH/N+ c<missing VAR>-Si solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 21.849, '%', 1],[140.0, 0.866, ',', 1],[146.0, 0.861, 'V', 1],[152.0, 29.32, 'mA', 1]

Si
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32600, 32600)
 Our resultsshow that the a-Si/c<missing VAR>-Si heterojunction is hypersensitive to the T<missing VAR>CO workfunction, and the T<missing VAR>CO work function should be large enough in order to achievehigh conversion efficiency for P+ a-SiH/N+ c<missing VAR>-Si solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 21.849, '%', 1],[136.0, 0.866, ',', 1],[142.0, 0.861, 'V', 1],[148.0, 29.32, 'mA', 1]

CO
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32613, 32614)
 Our resultsshow that the a-Si/c<missing VAR>-Si heterojunction is hypersensitive to the T<missing VAR>CO workfunction, and the T<missing VAR>CO work function should be large enough in order to achievehigh conversion efficiency for P+ a-SiH/N+ c<missing VAR>-Si solar cell.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 21.849, '%', 1],[122.0, 0.866, ',', 1],[128.0, 0.861, 'V', 1],[134.0, 29.32, 'mA', 1]

CO
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32627, 32628)
 Our resultsshow that the a-Si/c<missing VAR>-Si heterojunction is hypersensitive to the T<missing VAR>CO workfunction, and the T<missing VAR>CO work function should be large enough in order to achievehigh conversion efficiency for P+ a-SiH/N+ c<missing VAR>-Si solar cell.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 21.849, '%', 1],[108.0, 0.866, ',', 1],[114.0, 0.861, 'V', 1],[120.0, 29.32, 'mA', 1]

P
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32659, 32659)
 Our resultsshow that the a-Si/c<missing VAR>-Si heterojunction is hypersensitive to the T<missing VAR>CO workfunction, and the T<missing VAR>CO work function should be large enough in order to achievehigh conversion efficiency for P+ a-SiH/N+ c<missing VAR>-Si solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 21.849, '%', 1],[77.0, 0.866, ',', 1],[83.0, 0.861, 'V', 1],[89.0, 29.32, 'mA', 1]

N
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32667, 32667)
 Our resultsshow that the a-Si/c<missing VAR>-Si heterojunction is hypersensitive to the T<missing VAR>CO workfunction, and the T<missing VAR>CO work function should be large enough in order to achievehigh conversion efficiency for P+ a-SiH/N+ c<missing VAR>-Si solar cell.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 21.849, '%', 1],[69.0, 0.866, ',', 1],[75.0, 0.861, 'V', 1],[81.0, 29.32, 'mA', 1]

Si
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32672, 32672)
 Our resultsshow that the a-Si/c<missing VAR>-Si heterojunction is hypersensitive to the T<missing VAR>CO workfunction, and the T<missing VAR>CO work function should be large enough in order to achievehigh conversion efficiency for P+ a-SiH/N+ c<missing VAR>-Si solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 21.849, '%', 1],[64.0, 0.866, ',', 1],[70.0, 0.861, 'V', 1],[76.0, 29.32, 'mA', 1]

P
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32693, 32693)
 With the optimizedparameters set, the P+ a-SiH/N+ c<missing VAR>-Si solar cell reaches a high efficiency(eta) up to 21.849% (FF 0.866, VOC 0.861 V, J<missing VAR>SC 29.32 mA/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 21.849, '%', 0],[43.0, 0.866, ',', 0],[49.0, 0.861, 'V', 0],[55.0, 29.32, 'mA', 0]

N
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32701, 32701)
 With the optimizedparameters set, the P+ a-SiH/N+ c<missing VAR>-Si solar cell reaches a high efficiency(eta) up to 21.849% (FF 0.866, VOC 0.861 V, J<missing VAR>SC 29.32 mA/cm2).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 21.849, '%', 0],[35.0, 0.866, ',', 0],[41.0, 0.861, 'V', 0],[47.0, 29.32, 'mA', 0]

Si
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32706, 32706)
 With the optimizedparameters set, the P+ a-SiH/N+ c<missing VAR>-Si solar cell reaches a high efficiency(eta) up to 21.849% (FF 0.866, VOC 0.861 V, J<missing VAR>SC 29.32 mA/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 21.849, '%', 0],[30.0, 0.866, ',', 0],[36.0, 0.861, 'V', 0],[42.0, 29.32, 'mA', 0]

FF
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32733, 32734)
 With the optimizedparameters set, the P+ a-SiH/N+ c<missing VAR>-Si solar cell reaches a high efficiency(eta) up to 21.849% (FF 0.866, VOC 0.861 V, J<missing VAR>SC 29.32 mA/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 21.849, '%', 0],[2.0, 0.866, ',', 0],[8.0, 0.861, 'V', 0],[14.0, 29.32, 'mA', 0]

VOC
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32739, 32741)
 With the optimizedparameters set, the P+ a-SiH/N+ c<missing VAR>-Si solar cell reaches a high efficiency(eta) up to 21.849% (FF 0.866, VOC 0.861 V, J<missing VAR>SC 29.32 mA/cm2).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 21.849, '%', 0],[3.0, 0.866, ',', 0],[1.0, 0.861, 'V', 0],[7.0, 29.32, 'mA', 0]

SC
###Computer simulation of a-Si/c-Si heterojunction solar cell with high conversion efficiency|Chen AQing,Zhu KaiGui###
(32746, 32747)
 With the optimizedparameters set, the P+ a-SiH/N+ c<missing VAR>-Si solar cell reaches a high efficiency(eta) up to 21.849% (FF 0.866, VOC 0.861 V, J<missing VAR>SC 29.32 mA/cm2).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 21.849, '%', 0],[10.0, 0.866, ',', 0],[4.0, 0.861, 'V', 0],[1.0, 29.32, 'mA', 0]

As
###The fundamental problem of treating light incoherence in photovoltaics and its practical consequences|Aline Herman,Michael Sarrazin,Olivier Deparis###
(32921, 32921)
 As a consequence, complex corrugatedcells, which exploit light trapping for enhancing the efficiency, have not yetbeen accessible for optimization under incoherent light.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###The fundamental problem of treating light incoherence in photovoltaics and its practical consequences|Aline Herman,Michael Sarrazin,Olivier Deparis###
(33040, 33040)
 As an illustration, surface corrugated GaAs and c<missing VAR>-Si thin-filmsare considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###The fundamental problem of treating light incoherence in photovoltaics and its practical consequences|Aline Herman,Michael Sarrazin,Olivier Deparis###
(33051, 33052)
 As an illustration, surface corrugated GaAs and c<missing VAR>-Si thin-filmsare considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###The fundamental problem of treating light incoherence in photovoltaics and its practical consequences|Aline Herman,Michael Sarrazin,Olivier Deparis###
(33058, 33058)
 As an illustration, surface corrugated GaAs and c<missing VAR>-Si thin-filmsare considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage|Steven Limpert,Adam Burke,I-Ju Chen,Nicklas Anttu,Sebastian Lehmann,Sofia Fahlvik,Stephen Bremner,Gavin Conibeer,Claes Thelander,Mats-Erik Pistol,Heiner Linke###
(33341, 33346)
Hot carrier solar cells have been demonstrated in high-bandgap ferroelectricinsulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgapmaterials, where the potential efficiency gain is highest.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[79.0, 0.39, 'eV', 1]

InAs
###Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage|Steven Limpert,Adam Burke,I-Ju Chen,Nicklas Anttu,Sebastian Lehmann,Sofia Fahlvik,Stephen Bremner,Gavin Conibeer,Claes Thelander,Mats-Erik Pistol,Heiner Linke###
(33410, 33411)
 Recently, a highopen-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowirewith a low bandgap of 0.39 eV, and was interpreted in terms of aphotothermoelectric effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.39, 'eV', 0]

In
###Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage|Steven Limpert,Adam Burke,I-Ju Chen,Nicklas Anttu,Sebastian Lehmann,Sofia Fahlvik,Stephen Bremner,Gavin Conibeer,Claes Thelander,Mats-Erik Pistol,Heiner Linke###
(33491, 33491)
 In thedemonstrated devices, InP heterostructures are used as energy filters in orderto thermoelectrically harvest the energy of hot electrons photogenerated inInAs absorber segments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.39, 'eV', 2]

InP
###Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage|Steven Limpert,Adam Burke,I-Ju Chen,Nicklas Anttu,Sebastian Lehmann,Sofia Fahlvik,Stephen Bremner,Gavin Conibeer,Claes Thelander,Mats-Erik Pistol,Heiner Linke###
(33501, 33502)
 In thedemonstrated devices, InP heterostructures are used as energy filters in orderto thermoelectrically harvest the energy of hot electrons photogenerated inInAs absorber segments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.39, 'eV', 2]

InAs
###Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage|Steven Limpert,Adam Burke,I-Ju Chen,Nicklas Anttu,Sebastian Lehmann,Sofia Fahlvik,Stephen Bremner,Gavin Conibeer,Claes Thelander,Mats-Erik Pistol,Heiner Linke###
(33542, 33543)
 In thedemonstrated devices, InP heterostructures are used as energy filters in orderto thermoelectrically harvest the energy of hot electrons photogenerated inInAs absorber segments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.39, 'eV', 2]

SC
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33720, 33721)
Combined DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[624.0, 19.99, '%', 6],[628.0, 21.55, '%', 6],[632.0, 21.59, '%', 6],[636.0, 17.47, '%', 6],[640.0, 20.42, '%', 6],[644.0, 21.52, '%', 6],[648.0, 14.44, '%', 6],[652.0, 21.43, '%', 6]

PS
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33723, 33724)
Combined DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[621.0, 19.99, '%', 6],[625.0, 21.55, '%', 6],[629.0, 21.59, '%', 6],[633.0, 17.47, '%', 6],[637.0, 20.42, '%', 6],[641.0, 21.52, '%', 6],[645.0, 14.44, '%', 6],[649.0, 21.43, '%', 6]

PS
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33735, 33736)
Combined DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[609.0, 19.99, '%', 6],[613.0, 21.55, '%', 6],[617.0, 21.59, '%', 6],[621.0, 17.47, '%', 6],[625.0, 20.42, '%', 6],[629.0, 21.52, '%', 6],[633.0, 14.44, '%', 6],[637.0, 21.43, '%', 6]

Cs2BiAgI6
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33750, 33755)
Combined DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[590.0, 19.99, '%', 6],[594.0, 21.55, '%', 6],[598.0, 21.59, '%', 6],[602.0, 17.47, '%', 6],[606.0, 20.42, '%', 6],[610.0, 21.52, '%', 6],[614.0, 14.44, '%', 6],[618.0, 21.43, '%', 6]

In
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33776, 33776)
 In this study, combined DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks are used toinvestigate the optimized designs of Cs2BiAgI6 double perovskite-based solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[569.0, 19.99, '%', 5],[573.0, 21.55, '%', 5],[577.0, 21.59, '%', 5],[581.0, 17.47, '%', 5],[585.0, 20.42, '%', 5],[589.0, 21.52, '%', 5],[593.0, 14.44, '%', 5],[597.0, 21.43, '%', 5]

SC
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33790, 33791)
 In this study, combined DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks are used toinvestigate the optimized designs of Cs2BiAgI6 double perovskite-based solarcells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[554.0, 19.99, '%', 5],[558.0, 21.55, '%', 5],[562.0, 21.59, '%', 5],[566.0, 17.47, '%', 5],[570.0, 20.42, '%', 5],[574.0, 21.52, '%', 5],[578.0, 14.44, '%', 5],[582.0, 21.43, '%', 5]

PS
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33793, 33794)
 In this study, combined DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks are used toinvestigate the optimized designs of Cs2BiAgI6 double perovskite-based solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[551.0, 19.99, '%', 5],[555.0, 21.55, '%', 5],[559.0, 21.59, '%', 5],[563.0, 17.47, '%', 5],[567.0, 20.42, '%', 5],[571.0, 21.52, '%', 5],[575.0, 14.44, '%', 5],[579.0, 21.43, '%', 5]

PS
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33805, 33806)
 In this study, combined DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks are used toinvestigate the optimized designs of Cs2BiAgI6 double perovskite-based solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[539.0, 19.99, '%', 5],[543.0, 21.55, '%', 5],[547.0, 21.59, '%', 5],[551.0, 17.47, '%', 5],[555.0, 20.42, '%', 5],[559.0, 21.52, '%', 5],[563.0, 14.44, '%', 5],[567.0, 21.43, '%', 5]

Cs2BiAgI6
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33827, 33832)
 In this study, combined DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks are used toinvestigate the optimized designs of Cs2BiAgI6 double perovskite-based solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[513.0, 19.99, '%', 5],[517.0, 21.55, '%', 5],[521.0, 21.59, '%', 5],[525.0, 17.47, '%', 5],[529.0, 20.42, '%', 5],[533.0, 21.52, '%', 5],[537.0, 14.44, '%', 5],[541.0, 21.43, '%', 5]

Cs2BiAgI6
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33892, 33897)
 The first-principle calculation is employed to investigate thestructural stability, optical responses, and electronic contribution of theconstituent elements in Cs2BiAgI6 absorber material, where SCAPS-1D<missing VAR> and wxAM<missing VAR>PSsimulators are used to scrutinize different configurations of Cs2BiAgI6 solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[448.0, 19.99, '%', 4],[452.0, 21.55, '%', 4],[456.0, 21.59, '%', 4],[460.0, 17.47, '%', 4],[464.0, 20.42, '%', 4],[468.0, 21.52, '%', 4],[472.0, 14.44, '%', 4],[476.0, 21.43, '%', 4]

SC
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33906, 33907)
 The first-principle calculation is employed to investigate thestructural stability, optical responses, and electronic contribution of theconstituent elements in Cs2BiAgI6 absorber material, where SCAPS-1D<missing VAR> and wxAM<missing VAR>PSsimulators are used to scrutinize different configurations of Cs2BiAgI6 solarcells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 19.99, '%', 4],[442.0, 21.55, '%', 4],[446.0, 21.59, '%', 4],[450.0, 17.47, '%', 4],[454.0, 20.42, '%', 4],[458.0, 21.52, '%', 4],[462.0, 14.44, '%', 4],[466.0, 21.43, '%', 4]

PS
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33909, 33910)
 The first-principle calculation is employed to investigate thestructural stability, optical responses, and electronic contribution of theconstituent elements in Cs2BiAgI6 absorber material, where SCAPS-1D<missing VAR> and wxAM<missing VAR>PSsimulators are used to scrutinize different configurations of Cs2BiAgI6 solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[435.0, 19.99, '%', 4],[439.0, 21.55, '%', 4],[443.0, 21.59, '%', 4],[447.0, 17.47, '%', 4],[451.0, 20.42, '%', 4],[455.0, 21.52, '%', 4],[459.0, 14.44, '%', 4],[463.0, 21.43, '%', 4]

PS
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33920, 33921)
 The first-principle calculation is employed to investigate thestructural stability, optical responses, and electronic contribution of theconstituent elements in Cs2BiAgI6 absorber material, where SCAPS-1D<missing VAR> and wxAM<missing VAR>PSsimulators are used to scrutinize different configurations of Cs2BiAgI6 solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[424.0, 19.99, '%', 4],[428.0, 21.55, '%', 4],[432.0, 21.59, '%', 4],[436.0, 17.47, '%', 4],[440.0, 20.42, '%', 4],[444.0, 21.52, '%', 4],[448.0, 14.44, '%', 4],[452.0, 21.43, '%', 4]

Cs2BiAgI6
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33940, 33945)
 The first-principle calculation is employed to investigate thestructural stability, optical responses, and electronic contribution of theconstituent elements in Cs2BiAgI6 absorber material, where SCAPS-1D<missing VAR> and wxAM<missing VAR>PSsimulators are used to scrutinize different configurations of Cs2BiAgI6 solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 19.99, '%', 4],[404.0, 21.55, '%', 4],[408.0, 21.59, '%', 4],[412.0, 17.47, '%', 4],[416.0, 20.42, '%', 4],[420.0, 21.52, '%', 4],[424.0, 14.44, '%', 4],[428.0, 21.43, '%', 4]

PCB
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33956, 33958)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 19.99, '%', 3],[391.0, 21.55, '%', 3],[395.0, 21.59, '%', 3],[399.0, 17.47, '%', 3],[403.0, 20.42, '%', 3],[407.0, 21.52, '%', 3],[411.0, 14.44, '%', 3],[415.0, 21.43, '%', 3]

ZnO
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33962, 33963)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 19.99, '%', 3],[386.0, 21.55, '%', 3],[390.0, 21.59, '%', 3],[394.0, 17.47, '%', 3],[398.0, 20.42, '%', 3],[402.0, 21.52, '%', 3],[406.0, 14.44, '%', 3],[410.0, 21.43, '%', 3]

TiO2
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33966, 33968)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 19.99, '%', 3],[381.0, 21.55, '%', 3],[385.0, 21.59, '%', 3],[389.0, 17.47, '%', 3],[393.0, 20.42, '%', 3],[397.0, 21.52, '%', 3],[401.0, 14.44, '%', 3],[405.0, 21.43, '%', 3]

C60
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33971, 33972)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 19.99, '%', 3],[377.0, 21.55, '%', 3],[381.0, 21.59, '%', 3],[385.0, 17.47, '%', 3],[389.0, 20.42, '%', 3],[393.0, 21.52, '%', 3],[397.0, 14.44, '%', 3],[401.0, 21.43, '%', 3]

I
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33975, 33975)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 19.99, '%', 3],[374.0, 21.55, '%', 3],[378.0, 21.59, '%', 3],[382.0, 17.47, '%', 3],[386.0, 20.42, '%', 3],[390.0, 21.52, '%', 3],[394.0, 14.44, '%', 3],[398.0, 21.43, '%', 3]

O
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33978, 33978)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 19.99, '%', 3],[371.0, 21.55, '%', 3],[375.0, 21.59, '%', 3],[379.0, 17.47, '%', 3],[383.0, 20.42, '%', 3],[387.0, 21.52, '%', 3],[391.0, 14.44, '%', 3],[395.0, 21.43, '%', 3]

SnO2
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33981, 33983)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 19.99, '%', 3],[366.0, 21.55, '%', 3],[370.0, 21.59, '%', 3],[374.0, 17.47, '%', 3],[378.0, 20.42, '%', 3],[382.0, 21.52, '%', 3],[386.0, 14.44, '%', 3],[390.0, 21.43, '%', 3]

WS2
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33986, 33988)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 19.99, '%', 3],[361.0, 21.55, '%', 3],[365.0, 21.59, '%', 3],[369.0, 17.47, '%', 3],[373.0, 20.42, '%', 3],[377.0, 21.52, '%', 3],[381.0, 14.44, '%', 3],[385.0, 21.43, '%', 3]

CeO2
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(33993, 33995)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 19.99, '%', 3],[354.0, 21.55, '%', 3],[358.0, 21.59, '%', 3],[362.0, 17.47, '%', 3],[366.0, 20.42, '%', 3],[370.0, 21.52, '%', 3],[374.0, 14.44, '%', 3],[378.0, 21.43, '%', 3]

Cu2O
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34011, 34013)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 19.99, '%', 3],[336.0, 21.55, '%', 3],[340.0, 21.59, '%', 3],[344.0, 17.47, '%', 3],[348.0, 20.42, '%', 3],[352.0, 21.52, '%', 3],[356.0, 14.44, '%', 3],[360.0, 21.43, '%', 3]

CuSCN
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34016, 34019)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 19.99, '%', 3],[330.0, 21.55, '%', 3],[334.0, 21.59, '%', 3],[338.0, 17.47, '%', 3],[342.0, 20.42, '%', 3],[346.0, 21.52, '%', 3],[350.0, 14.44, '%', 3],[354.0, 21.43, '%', 3]

CuSbS2
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34022, 34025)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 19.99, '%', 3],[324.0, 21.55, '%', 3],[328.0, 21.59, '%', 3],[332.0, 17.47, '%', 3],[336.0, 20.42, '%', 3],[340.0, 21.52, '%', 3],[344.0, 14.44, '%', 3],[348.0, 21.43, '%', 3]

NiO
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34028, 34029)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 19.99, '%', 3],[320.0, 21.55, '%', 3],[324.0, 21.59, '%', 3],[328.0, 17.47, '%', 3],[332.0, 20.42, '%', 3],[336.0, 21.52, '%', 3],[340.0, 14.44, '%', 3],[344.0, 21.43, '%', 3]

P3H
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34032, 34034)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 19.99, '%', 3],[315.0, 21.55, '%', 3],[319.0, 21.59, '%', 3],[323.0, 17.47, '%', 3],[327.0, 20.42, '%', 3],[331.0, 21.52, '%', 3],[335.0, 14.44, '%', 3],[339.0, 21.43, '%', 3]

P
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34038, 34038)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 19.99, '%', 3],[311.0, 21.55, '%', 3],[315.0, 21.59, '%', 3],[319.0, 17.47, '%', 3],[323.0, 20.42, '%', 3],[327.0, 21.52, '%', 3],[331.0, 14.44, '%', 3],[335.0, 21.43, '%', 3]

O
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34041, 34041)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 19.99, '%', 3],[308.0, 21.55, '%', 3],[312.0, 21.59, '%', 3],[316.0, 17.47, '%', 3],[320.0, 20.42, '%', 3],[324.0, 21.52, '%', 3],[328.0, 14.44, '%', 3],[332.0, 21.43, '%', 3]

PSS
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34044, 34046)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 19.99, '%', 3],[303.0, 21.55, '%', 3],[307.0, 21.59, '%', 3],[311.0, 17.47, '%', 3],[315.0, 20.42, '%', 3],[319.0, 21.52, '%', 3],[323.0, 14.44, '%', 3],[327.0, 21.43, '%', 3]

O
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34052, 34052)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 19.99, '%', 3],[297.0, 21.55, '%', 3],[301.0, 21.59, '%', 3],[305.0, 17.47, '%', 3],[309.0, 20.42, '%', 3],[313.0, 21.52, '%', 3],[317.0, 14.44, '%', 3],[321.0, 21.43, '%', 3]

CuI
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34058, 34059)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 19.99, '%', 3],[290.0, 21.55, '%', 3],[294.0, 21.59, '%', 3],[298.0, 17.47, '%', 3],[302.0, 20.42, '%', 3],[306.0, 21.52, '%', 3],[310.0, 14.44, '%', 3],[314.0, 21.43, '%', 3]

CuO
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34062, 34063)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 19.99, '%', 3],[286.0, 21.55, '%', 3],[290.0, 21.59, '%', 3],[294.0, 17.47, '%', 3],[298.0, 20.42, '%', 3],[302.0, 21.52, '%', 3],[306.0, 14.44, '%', 3],[310.0, 21.43, '%', 3]

V2O5
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34066, 34069)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 19.99, '%', 3],[280.0, 21.55, '%', 3],[284.0, 21.59, '%', 3],[288.0, 17.47, '%', 3],[292.0, 20.42, '%', 3],[296.0, 21.52, '%', 3],[300.0, 14.44, '%', 3],[304.0, 21.43, '%', 3]

CB
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34073, 34074)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 19.99, '%', 3],[275.0, 21.55, '%', 3],[279.0, 21.59, '%', 3],[283.0, 17.47, '%', 3],[287.0, 20.42, '%', 3],[291.0, 21.52, '%', 3],[295.0, 14.44, '%', 3],[299.0, 21.43, '%', 3]

S
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34076, 34076)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 19.99, '%', 3],[273.0, 21.55, '%', 3],[277.0, 21.59, '%', 3],[281.0, 17.47, '%', 3],[285.0, 20.42, '%', 3],[289.0, 21.52, '%', 3],[293.0, 14.44, '%', 3],[297.0, 21.43, '%', 3]

CF
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34079, 34080)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 19.99, '%', 3],[269.0, 21.55, '%', 3],[273.0, 21.59, '%', 3],[277.0, 17.47, '%', 3],[281.0, 20.42, '%', 3],[285.0, 21.52, '%', 3],[289.0, 14.44, '%', 3],[293.0, 21.43, '%', 3]

S
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34082, 34082)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 19.99, '%', 3],[267.0, 21.55, '%', 3],[271.0, 21.59, '%', 3],[275.0, 17.47, '%', 3],[279.0, 20.42, '%', 3],[283.0, 21.52, '%', 3],[287.0, 14.44, '%', 3],[291.0, 21.43, '%', 3]

H
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34090, 34090)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 19.99, '%', 3],[259.0, 21.55, '%', 3],[263.0, 21.59, '%', 3],[267.0, 17.47, '%', 3],[271.0, 20.42, '%', 3],[275.0, 21.52, '%', 3],[279.0, 14.44, '%', 3],[283.0, 21.43, '%', 3]

Au
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34097, 34097)
 Here, PCBM<missing VAR>, ZnO, TiO2, C60, IGZO, SnO2, WS2, and CeO2 are used as ETL,and Cu2O, CuSCN, CuSbS2, NiO, P3HT<missing VAR>, PEDOT<missing VAR> PSS, Spiro-MeOTAD, CuI, CuO, V2O5,CBT<missing VAR>S, CFT<missing VAR>S are used as HTL, and Au is used as a back contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 19.99, '%', 3],[252.0, 21.55, '%', 3],[256.0, 21.59, '%', 3],[260.0, 17.47, '%', 3],[264.0, 20.42, '%', 3],[268.0, 21.52, '%', 3],[272.0, 14.44, '%', 3],[276.0, 21.43, '%', 3]

Cs2BiAgI6
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34123, 34128)
 About ninety-sixcombinations of Cs2BiAgI6-based solar cell structures are investigated, inwhich eight sets of solar cell structures are identified as the most efficientstructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 19.99, '%', 2],[221.0, 21.55, '%', 2],[225.0, 21.59, '%', 2],[229.0, 17.47, '%', 2],[233.0, 20.42, '%', 2],[237.0, 21.52, '%', 2],[241.0, 14.44, '%', 2],[245.0, 21.43, '%', 2]

V
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34245, 34245)
 Besides, holistic investigation on the effect of different factorssuch as the thickness of different layers, series and shunt resistances,temperature, capacitance, Mott-Schottky and generation-recombination rates, andJ<missing VAR>-V (current-voltage density) and QE (quantum efficiency) characteristics isperformed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 19.99, '%', 1],[104.0, 21.55, '%', 1],[108.0, 21.59, '%', 1],[112.0, 17.47, '%', 1],[116.0, 20.42, '%', 1],[120.0, 21.52, '%', 1],[124.0, 14.44, '%', 1],[128.0, 21.43, '%', 1]

CB
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34280, 34281)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 19.99, '%', 0],[68.0, 21.55, '%', 0],[72.0, 21.59, '%', 0],[76.0, 17.47, '%', 0],[80.0, 20.42, '%', 0],[84.0, 21.52, '%', 0],[88.0, 14.44, '%', 0],[92.0, 21.43, '%', 0]

S
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34283, 34283)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 19.99, '%', 0],[66.0, 21.55, '%', 0],[70.0, 21.59, '%', 0],[74.0, 17.47, '%', 0],[78.0, 20.42, '%', 0],[82.0, 21.52, '%', 0],[86.0, 14.44, '%', 0],[90.0, 21.43, '%', 0]

H
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34291, 34291)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 19.99, '%', 0],[58.0, 21.55, '%', 0],[62.0, 21.59, '%', 0],[66.0, 17.47, '%', 0],[70.0, 20.42, '%', 0],[74.0, 21.52, '%', 0],[78.0, 14.44, '%', 0],[82.0, 21.43, '%', 0]

Cs2BiAgI6
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34297, 34302)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 19.99, '%', 0],[47.0, 21.55, '%', 0],[51.0, 21.59, '%', 0],[55.0, 17.47, '%', 0],[59.0, 20.42, '%', 0],[63.0, 21.52, '%', 0],[67.0, 14.44, '%', 0],[71.0, 21.43, '%', 0]

PC
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34337, 34338)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 19.99, '%', 0],[11.0, 21.55, '%', 0],[15.0, 21.59, '%', 0],[19.0, 17.47, '%', 0],[23.0, 20.42, '%', 0],[27.0, 21.52, '%', 0],[31.0, 14.44, '%', 0],[35.0, 21.43, '%', 0]

PCB
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34378, 34380)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 19.99, '%', 0],[29.0, 21.55, '%', 0],[25.0, 21.59, '%', 0],[21.0, 17.47, '%', 0],[17.0, 20.42, '%', 0],[13.0, 21.52, '%', 0],[9.0, 14.44, '%', 0],[5.0, 21.43, '%', 0]

TiO2
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34384, 34386)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 19.99, '%', 0],[35.0, 21.55, '%', 0],[31.0, 21.59, '%', 0],[27.0, 17.47, '%', 0],[23.0, 20.42, '%', 0],[19.0, 21.52, '%', 0],[15.0, 14.44, '%', 0],[11.0, 21.43, '%', 0]

ZnO
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34390, 34391)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 19.99, '%', 0],[41.0, 21.55, '%', 0],[37.0, 21.59, '%', 0],[33.0, 17.47, '%', 0],[29.0, 20.42, '%', 0],[25.0, 21.52, '%', 0],[21.0, 14.44, '%', 0],[17.0, 21.43, '%', 0]

C60
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34394, 34395)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 19.99, '%', 0],[45.0, 21.55, '%', 0],[41.0, 21.59, '%', 0],[37.0, 17.47, '%', 0],[33.0, 20.42, '%', 0],[29.0, 21.52, '%', 0],[25.0, 14.44, '%', 0],[21.0, 21.43, '%', 0]

I
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34398, 34398)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 19.99, '%', 0],[49.0, 21.55, '%', 0],[45.0, 21.59, '%', 0],[41.0, 17.47, '%', 0],[37.0, 20.42, '%', 0],[33.0, 21.52, '%', 0],[29.0, 14.44, '%', 0],[25.0, 21.43, '%', 0]

O
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34401, 34401)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 19.99, '%', 0],[52.0, 21.55, '%', 0],[48.0, 21.59, '%', 0],[44.0, 17.47, '%', 0],[40.0, 20.42, '%', 0],[36.0, 21.52, '%', 0],[32.0, 14.44, '%', 0],[28.0, 21.43, '%', 0]

SnO2
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34404, 34406)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 19.99, '%', 0],[55.0, 21.55, '%', 0],[51.0, 21.59, '%', 0],[47.0, 17.47, '%', 0],[43.0, 20.42, '%', 0],[39.0, 21.52, '%', 0],[35.0, 14.44, '%', 0],[31.0, 21.43, '%', 0]

CeO2
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34409, 34411)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 19.99, '%', 0],[60.0, 21.55, '%', 0],[56.0, 21.59, '%', 0],[52.0, 17.47, '%', 0],[48.0, 20.42, '%', 0],[44.0, 21.52, '%', 0],[40.0, 14.44, '%', 0],[36.0, 21.43, '%', 0]

WS2
###Combined DFT, SCAPS-1D, and wxAMPS frameworks for design optimization of efficient Cs2BiAgI6-based perovskite solar cells with different charge transport layers|M. Khalid Hossain,A. A. Arnab,Ranjit C. Das,K. M. Hossain,M. H. K. Rubel,Md. Ferdous Rahman,H. Bencherif,M. E. Emetere,Mustafa K. A. Mohammed,Rahul Pandey###
(34414, 34416)
 The results show CBT<missing VAR>S as the best HTL for Cs2BiAgI6 with all eightETLs used in this work, resulting in a power conversion efficiency (PCE) of19.99%, 21.55%, 21.59%, 17.47%, 20.42%, 21.52%, 14.44%, 21.43% with PCBM<missing VAR>, TiO2,ZnO, C60, IGZO, SnO2, CeO2, WS2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 19.99, '%', 0],[65.0, 21.55, '%', 0],[61.0, 21.59, '%', 0],[57.0, 17.47, '%', 0],[53.0, 20.42, '%', 0],[49.0, 21.52, '%', 0],[45.0, 14.44, '%', 0],[41.0, 21.43, '%', 0]

CH3NH3PbI3
###The Efficiency Limit of CH3NH3PbI3 Perovskite Solar Cells|Wei E. I. Sha,Xingang Ren,Luzhou Chen,Wallace C. H. Choy###
(34736, 34744)
The Efficiency Limit of CH3NH3PbI3 Perovskite Solar Cells.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 31, '%', 4],[224.0, 33, '%', 4]

(CH3NH3PbI3)
###The Efficiency Limit of CH3NH3PbI3 Perovskite Solar Cells|Wei E. I. Sha,Xingang Ren,Luzhou Chen,Wallace C. H. Choy###
(34783, 34793)
 With the consideration of photon recycling effect, the efficiency limit ofmethylammonium lead iodide (CH3NH3PbI3) perovskite solar cells is predicted bya detailed balance model.
Featurization successful!
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 31, '%', 3],[175.0, 33, '%', 3]

(GaAs)
###The Efficiency Limit of CH3NH3PbI3 Perovskite Solar Cells|Wei E. I. Sha,Xingang Ren,Luzhou Chen,Wallace C. H. Choy###
(34981, 34984)
 The efficiency limit ofperovskite cells (without the angular restriction) is about 31%, whichapproaches to Shockley-Queisser limit (33%) achievable by gallium arsenide(GaAs) cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 31, '%', 0],[13.0, 33, '%', 0]

At
###Spin-enhanced organic bulk heterojunction photovoltaic solar cells|Ye Zhang,Tek P. Basel,Bhoj R. Gautam,Xiaomei Yang,Debra J. Mascaro,Feng Liu,Z. Valy Vardeny###
(35320, 35320)
 At an optimal doping level of 3wt%, the efficiency of a standardpoly(3-hexylthiophene)/1-(3-(methoxycarbonyl)propyl)-1-1-phenyl)(6,6)C61 solarcell improves by 18%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 6, ',', 0],[71.0, 18, '%', 0]

C61
###Spin-enhanced organic bulk heterojunction photovoltaic solar cells|Ye Zhang,Tek P. Basel,Bhoj R. Gautam,Xiaomei Yang,Debra J. Mascaro,Feng Liu,Z. Valy Vardeny###
(35379, 35380)
 At an optimal doping level of 3wt%, the efficiency of a standardpoly(3-hexylthiophene)/1-(3-(methoxycarbonyl)propyl)-1-1-phenyl)(6,6)C61 solarcell improves by 18%.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 6, ',', 0],[11.0, 18, '%', 0]

F
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35577, 35577)
 We theoretically study the efficiency limits and performance characteristicsof few-layer graphene-semiconductor solar cells (FG<missing VAR>SCs) based on a Schottkycontact device structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 28, '%', 2],[189.0, -0.064, '%', 3],[197.0, -0.049, '%', 3]

Cs
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35580, 35580)
 We theoretically study the efficiency limits and performance characteristicsof few-layer graphene-semiconductor solar cells (FG<missing VAR>SCs) based on a Schottkycontact device structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 28, '%', 2],[186.0, -0.064, '%', 3],[194.0, -0.049, '%', 3]

B
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35664, 35664)
 The calculations reveal that ABA-stacked trilayergraphene-silicon solar cell exhibits a maximal conversion efficiency exceeding28% due to a lower reversed saturation current when compared to that of theABC-stacking configuration.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 28, '%', 0],[102.0, -0.064, '%', 1],[110.0, -0.049, '%', 1]

BC
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35724, 35725)
 The calculations reveal that ABA-stacked trilayergraphene-silicon solar cell exhibits a maximal conversion efficiency exceeding28% due to a lower reversed saturation current when compared to that of theABC-stacking configuration.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 28, '%', 0],[41.0, -0.064, '%', 1],[49.0, -0.049, '%', 1]

PC
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35740, 35741)
 The thermal coefficients of PCE<missing VAR> for ABA and ABCstacking FG<missing VAR>SCs are -0.064%/K and -0.049%/K, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 28, '%', 1],[25.0, -0.064, '%', 0],[33.0, -0.049, '%', 0]

B
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35747, 35747)
 The thermal coefficients of PCE<missing VAR> for ABA and ABCstacking FG<missing VAR>SCs are -0.064%/K and -0.049%/K, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 28, '%', 1],[19.0, -0.064, '%', 0],[27.0, -0.049, '%', 0]

BC
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35753, 35754)
 The thermal coefficients of PCE<missing VAR> for ABA and ABCstacking FG<missing VAR>SCs are -0.064%/K and -0.049%/K, respectively.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 28, '%', 1],[12.0, -0.064, '%', 0],[20.0, -0.049, '%', 0]

F
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35759, 35759)
 The thermal coefficients of PCE<missing VAR> for ABA and ABCstacking FG<missing VAR>SCs are -0.064%/K and -0.049%/K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 28, '%', 1],[7.0, -0.064, '%', 0],[15.0, -0.049, '%', 0]

SCs
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35761, 35762)
 The thermal coefficients of PCE<missing VAR> for ABA and ABCstacking FG<missing VAR>SCs are -0.064%/K and -0.049%/K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 28, '%', 1],[4.0, -0.064, '%', 0],[12.0, -0.049, '%', 0]

K
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35770, 35770)
 The thermal coefficients of PCE<missing VAR> for ABA and ABCstacking FG<missing VAR>SCs are -0.064%/K and -0.049%/K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 28, '%', 1],[4.0, -0.064, '%', 0],[4.0, -0.049, '%', 0]

K
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35778, 35778)
 The thermal coefficients of PCE<missing VAR> for ABA and ABCstacking FG<missing VAR>SCs are -0.064%/K and -0.049%/K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 28, '%', 1],[12.0, -0.064, '%', 0],[4.0, -0.049, '%', 0]

F
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35831, 35831)
 Our work offersinsights for optimal designs of graphene-based solar cells, thus paving a routetowards the design of high-performance FG<missing VAR>SC for future nanoscale energyconverters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 28, '%', 2],[65.0, -0.064, '%', 1],[57.0, -0.049, '%', 1]

SC
###Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization|Xin Zhang,Jicheng Wang,Yee Sin Ang,Juncheng Guo###
(35833, 35834)
 Our work offersinsights for optimal designs of graphene-based solar cells, thus paving a routetowards the design of high-performance FG<missing VAR>SC for future nanoscale energyconverters.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 28, '%', 2],[67.0, -0.064, '%', 1],[59.0, -0.049, '%', 1]

Si
###Material and Process Tolerant High Efficiency Solar Cells with Dynamic Recovery of Performance|Nithin Chatterji,Swasti Bhatia,Anil Kumar,Aldrin Antony,Pradeep R. Nair###
(35963, 35963)
 Low cost, highly efficient, and stable solar cells demand low temperatureprocessing, less stringent criteria on materials, and possibility of dynamicrecovery from long term degradation a combination of features unachievablefrom the perspectives of current c<missing VAR>Si technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Material and Process Tolerant High Efficiency Solar Cells with Dynamic Recovery of Performance|Nithin Chatterji,Swasti Bhatia,Anil Kumar,Aldrin Antony,Pradeep R. Nair###
(36144, 36145)
Importantly, such solar cells can dynamically offset efficiency loss due toelevated temperature and interface degradation associated with long term fieldoperation and hence could be of broad interest to the PV community.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36209, 36209)
 Phase evolution during the selenization is crucial for high-quality kesteriteCu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 14.1, '%', 3]

S
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36211, 36211)
 Phase evolution during the selenization is crucial for high-quality kesteriteCu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 14.1, '%', 3]

Se
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36214, 36214)
 Phase evolution during the selenization is crucial for high-quality kesteriteCu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 14.1, '%', 3]

C
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36219, 36219)
 Phase evolution during the selenization is crucial for high-quality kesteriteCu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 14.1, '%', 3]

Se
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36223, 36223)
 Phase evolution during the selenization is crucial for high-quality kesteriteCu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 14.1, '%', 3]

Cu
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36257, 36257)
 Herein, weregulate kinetic process of phase evolution from Cu+-Sn4+-MOE (MOE2-methoxyethanol) system by precisely controlling positive chamber pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 14.1, '%', 2]

Se
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36313, 36313)
 Wefound that, at the heating-up stage, Se vapor concentration is intentionallysuppressed in low-temperature region, which effectively reduces collisionprobability between the CZTS and Se atoms, thus remarkably inhibiting formationof secondary phases on the surface and multiple-step phase evolution processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 14.1, '%', 1]

C
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36350, 36350)
 Wefound that, at the heating-up stage, Se vapor concentration is intentionallysuppressed in low-temperature region, which effectively reduces collisionprobability between the CZTS and Se atoms, thus remarkably inhibiting formationof secondary phases on the surface and multiple-step phase evolution processes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 14.1, '%', 1]

S
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36353, 36353)
 Wefound that, at the heating-up stage, Se vapor concentration is intentionallysuppressed in low-temperature region, which effectively reduces collisionprobability between the CZTS and Se atoms, thus remarkably inhibiting formationof secondary phases on the surface and multiple-step phase evolution processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 14.1, '%', 1]

Se
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36357, 36357)
 Wefound that, at the heating-up stage, Se vapor concentration is intentionallysuppressed in low-temperature region, which effectively reduces collisionprobability between the CZTS and Se atoms, thus remarkably inhibiting formationof secondary phases on the surface and multiple-step phase evolution processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 14.1, '%', 1]

C
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36436, 36436)
This strategy enables the phase evolution to start at relatively highertemperature and thereby leading to high crystalline quality CZTSSe absorberwith fewer defects, and corresponding CZTSSe solar cell can present 14.1%efficiency (total area), which is the highest result so far.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 14.1, '%', 0]

SSe
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36439, 36440)
This strategy enables the phase evolution to start at relatively highertemperature and thereby leading to high crystalline quality CZTSSe absorberwith fewer defects, and corresponding CZTSSe solar cell can present 14.1%efficiency (total area), which is the highest result so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 14.1, '%', 0]

C
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36456, 36456)
This strategy enables the phase evolution to start at relatively highertemperature and thereby leading to high crystalline quality CZTSSe absorberwith fewer defects, and corresponding CZTSSe solar cell can present 14.1%efficiency (total area), which is the highest result so far.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 14.1, '%', 0]

SSe
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36459, 36460)
This strategy enables the phase evolution to start at relatively highertemperature and thereby leading to high crystalline quality CZTSSe absorberwith fewer defects, and corresponding CZTSSe solar cell can present 14.1%efficiency (total area), which is the highest result so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 14.1, '%', 0]

C
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36517, 36517)
 This work providesimportant insights into selenization mechanism of CZTSSe absorbers and exploresa new way of kinetic regulation strategy to simplify the phase evolution pathto efficient CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 14.1, '%', 1]

SSe
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36520, 36521)
 This work providesimportant insights into selenization mechanism of CZTSSe absorbers and exploresa new way of kinetic regulation strategy to simplify the phase evolution pathto efficient CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 14.1, '%', 1]

C
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36561, 36561)
 This work providesimportant insights into selenization mechanism of CZTSSe absorbers and exploresa new way of kinetic regulation strategy to simplify the phase evolution pathto efficient CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 14.1, '%', 1]

SSe
###A precisely regulating phase evolution strategy for highly efficient kesterite solar cells|Jiazheng Zhou,Xiao Xu,Huijue Wu,Jinlin Wang,Licheng Lou,Kang Yin,Yuancai Gong,Jiangjian Shi,Yanhong Luo,Dongmei Li,Hao Xin,Qingbo Meng###
(36564, 36565)
 This work providesimportant insights into selenization mechanism of CZTSSe absorbers and exploresa new way of kinetic regulation strategy to simplify the phase evolution pathto efficient CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 14.1, '%', 1]

S
###Nonequilibrium theory of the conversion-efficiency limit of solar cells including thermalization and extraction of carriers|Kenji Kamide,Toshimitsu Mochizuki,Hidefumi Akiyama,Hidetaka Takato###
(36639, 36639)
 The ideal solar cell conversion efficiency limit known as theShockley-Queisser (SQ) limit, which is based on a detailed balance betweenabsorption and radiation, has long been a target for solar cell researchers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonequilibrium theory of the conversion-efficiency limit of solar cells including thermalization and extraction of carriers|Kenji Kamide,Toshimitsu Mochizuki,Hidefumi Akiyama,Hidetaka Takato###
(36758, 36758)
 Given the current situation inwhich research-level cell efficiencies are approaching the SQ<missing VAR> limit, aquantitative argument with regard to these requirements is worthwhile in termsof understanding of the remaining loss mechanisms in current devices and thedevice characteristics of solar cells that are operating outside the detailedbalance conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonequilibrium theory of the conversion-efficiency limit of solar cells including thermalization and extraction of carriers|Kenji Kamide,Toshimitsu Mochizuki,Hidefumi Akiyama,Hidetaka Takato###
(37062, 37062)
 Using a simple planar solarcell as an example, we address the parameter regime in terms of the carrierextraction time and then consider where the conventional SQ<missing VAR> theory applies andwhat could happen outside the applicable range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37101, 37101)
Performance limitation of Si Nanowire solar cells Effects of nanowire length and surface defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 320, 'nm', 6],[298.0, 6.4, 'micro', 6]

In
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37124, 37124)
 In Si nanowire (SiNW) solar cells enhanced light confinement property inaddition to decoupling of charge carrier collection and light absorptiondirections plays a significant role to resolve the draw backs of bulk Si solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 320, 'nm', 5],[275.0, 6.4, 'micro', 5]

Si
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37126, 37126)
 In Si nanowire (SiNW) solar cells enhanced light confinement property inaddition to decoupling of charge carrier collection and light absorptiondirections plays a significant role to resolve the draw backs of bulk Si solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 320, 'nm', 5],[273.0, 6.4, 'micro', 5]

(SiNW)
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37130, 37134)
 In Si nanowire (SiNW) solar cells enhanced light confinement property inaddition to decoupling of charge carrier collection and light absorptiondirections plays a significant role to resolve the draw backs of bulk Si solarcells.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 320, 'nm', 5],[265.0, 6.4, 'micro', 5]

Si
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37196, 37196)
 In Si nanowire (SiNW) solar cells enhanced light confinement property inaddition to decoupling of charge carrier collection and light absorptiondirections plays a significant role to resolve the draw backs of bulk Si solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 320, 'nm', 5],[203.0, 6.4, 'micro', 5]

In
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37204, 37204)
 In this report we have studied the dependence of the phovoltaicproperties of Si NW array solar cells on the SiNW length and enhanced surfacedefect states as a result of enhanced surface area of the NWs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 320, 'nm', 4],[195.0, 6.4, 'micro', 4]

Si
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37231, 37231)
 In this report we have studied the dependence of the phovoltaicproperties of Si NW array solar cells on the SiNW length and enhanced surfacedefect states as a result of enhanced surface area of the NWs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 320, 'nm', 4],[168.0, 6.4, 'micro', 4]

NW
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37233, 37234)
 In this report we have studied the dependence of the phovoltaicproperties of Si NW array solar cells on the SiNW length and enhanced surfacedefect states as a result of enhanced surface area of the NWs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 320, 'nm', 4],[165.0, 6.4, 'micro', 4]

SiNW
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37246, 37248)
 In this report we have studied the dependence of the phovoltaicproperties of Si NW array solar cells on the SiNW length and enhanced surfacedefect states as a result of enhanced surface area of the NWs.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 320, 'nm', 4],[151.0, 6.4, 'micro', 4]

N
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37281, 37281)
 In this report we have studied the dependence of the phovoltaicproperties of Si NW array solar cells on the SiNW length and enhanced surfacedefect states as a result of enhanced surface area of the NWs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 320, 'nm', 4],[118.0, 6.4, 'micro', 4]

SiNW
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37287, 37289)
 The SiNW arrayshave been fabricated using metal catalyzed electroless etching (MCEE)technique.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 320, 'nm', 3],[110.0, 6.4, 'micro', 3]

SiNW
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37381, 37383)
 SiNW lengths have been controlled from  320 nmto 6.4 micro meter by controlling the parameters of MCEE technique.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 320, 'nm', 0],[16.0, 6.4, 'micro', 0]

Si
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37634, 37634)
 This work is beneficial for the production commercial Sisolar cell where SiNW arrays could be used as a antireflection coating insteadof using separate antireflection layers and thus could reduced the productioncost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 320, 'nm', 7],[235.0, 6.4, 'micro', 7]

SiNW
###Performance limitation of Si Nanowire solar cells: Effects of nanowire length and surface defects|Deepika Bora,Shrestha Bhattacharya,Nitin Kumar,Aishik Basu Mallick,Avriti Srivastava,Mrinal Dutta,Sanjay K. Srivastava,P. Prathap,C. M. S. Rauthan###
(37643, 37645)
 This work is beneficial for the production commercial Sisolar cell where SiNW arrays could be used as a antireflection coating insteadof using separate antireflection layers and thus could reduced the productioncost.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 320, 'nm', 7],[244.0, 6.4, 'micro', 7]

ZnOAl
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37708, 37710)
Exploring co-sputtering of ZnOAl and SiO2 for efficient electron-selective contacts on silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 2, 'nm', 4],[466.0, 19.5, '%', 7],[483.0, 700, 'mV', 7],[492.0, 75, '%', 7]

SiO2
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37714, 37716)
Exploring co-sputtering of ZnOAl and SiO2 for efficient electron-selective contacts on silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 2, 'nm', 4],[460.0, 19.5, '%', 7],[477.0, 700, 'mV', 7],[486.0, 75, '%', 7]

In
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37737, 37737)
 In recent years, considerable efforts have been devoted to developing novelelectron-selective materials for crystalline Si (c<missing VAR>-Si) solar cells with theattempts to simplify the fabrication process and improve efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 2, 'nm', 3],[439.0, 19.5, '%', 6],[456.0, 700, 'mV', 6],[465.0, 75, '%', 6]

Si
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37771, 37771)
 In recent years, considerable efforts have been devoted to developing novelelectron-selective materials for crystalline Si (c<missing VAR>-Si) solar cells with theattempts to simplify the fabrication process and improve efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 2, 'nm', 3],[405.0, 19.5, '%', 6],[422.0, 700, 'mV', 6],[431.0, 75, '%', 6]

Si
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37776, 37776)
 In recent years, considerable efforts have been devoted to developing novelelectron-selective materials for crystalline Si (c<missing VAR>-Si) solar cells with theattempts to simplify the fabrication process and improve efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 2, 'nm', 3],[400.0, 19.5, '%', 6],[417.0, 700, 'mV', 6],[426.0, 75, '%', 6]

In
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37807, 37807)
 In thisstudy, ZnOAl (AZ<missing VAR>O) is co-sputtered with SiO2 to form AZ<missing VAR>OSiO2 films withdifferent SiO2 content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 2, 'nm', 2],[369.0, 19.5, '%', 5],[386.0, 700, 'mV', 5],[395.0, 75, '%', 5]

ZnOAl
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37815, 37817)
 In thisstudy, ZnOAl (AZ<missing VAR>O) is co-sputtered with SiO2 to form AZ<missing VAR>OSiO2 films withdifferent SiO2 content.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, 'nm', 2],[359.0, 19.5, '%', 5],[376.0, 700, 'mV', 5],[385.0, 75, '%', 5]

O
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37822, 37822)
 In thisstudy, ZnOAl (AZ<missing VAR>O) is co-sputtered with SiO2 to form AZ<missing VAR>OSiO2 films withdifferent SiO2 content.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2, 'nm', 2],[354.0, 19.5, '%', 5],[371.0, 700, 'mV', 5],[380.0, 75, '%', 5]

SiO2
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37833, 37835)
 In thisstudy, ZnOAl (AZ<missing VAR>O) is co-sputtered with SiO2 to form AZ<missing VAR>OSiO2 films withdifferent SiO2 content.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 2, 'nm', 2],[341.0, 19.5, '%', 5],[358.0, 700, 'mV', 5],[367.0, 75, '%', 5]

OSiO2
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37843, 37846)
 In thisstudy, ZnOAl (AZ<missing VAR>O) is co-sputtered with SiO2 to form AZ<missing VAR>OSiO2 films withdifferent SiO2 content.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2, 'nm', 2],[330.0, 19.5, '%', 5],[347.0, 700, 'mV', 5],[356.0, 75, '%', 5]

SiO2
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37855, 37857)
 In thisstudy, ZnOAl (AZ<missing VAR>O) is co-sputtered with SiO2 to form AZ<missing VAR>OSiO2 films withdifferent SiO2 content.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'nm', 2],[319.0, 19.5, '%', 5],[336.0, 700, 'mV', 5],[345.0, 75, '%', 5]

Al
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37912, 37912)
 These nanometer-scale films, deposited on top of thinintrinsic hydrogenated amorphous silicon films and capped withlow-work-function metal (such as Al and Mg), are demonstrated to functioneffectively as electron-selective contacts in c<missing VAR>-Si solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'nm', 1],[264.0, 19.5, '%', 4],[281.0, 700, 'mV', 4],[290.0, 75, '%', 4]

Mg
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37916, 37916)
 These nanometer-scale films, deposited on top of thinintrinsic hydrogenated amorphous silicon films and capped withlow-work-function metal (such as Al and Mg), are demonstrated to functioneffectively as electron-selective contacts in c<missing VAR>-Si solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, 'nm', 1],[260.0, 19.5, '%', 4],[277.0, 700, 'mV', 4],[286.0, 75, '%', 4]

Si
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37943, 37943)
 These nanometer-scale films, deposited on top of thinintrinsic hydrogenated amorphous silicon films and capped withlow-work-function metal (such as Al and Mg), are demonstrated to functioneffectively as electron-selective contacts in c<missing VAR>-Si solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'nm', 1],[233.0, 19.5, '%', 4],[250.0, 700, 'mV', 4],[259.0, 75, '%', 4]

OSiO2
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(37962, 37965)
 On the onehand, AZ<missing VAR>OSiO2 plays an important role in such electron-selective contact andits thickness is a critical parameter, thickness of 2 nm showing the best.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'nm', 0],[211.0, 19.5, '%', 3],[228.0, 700, 'mV', 3],[237.0, 75, '%', 3]

OSiO2
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38035, 38038)
 Onthe other hand, at the optimal thickness of AZ<missing VAR>OSiO2, the open circuit voltage(VOC) of the solar cells is found to be relatively insensitive to either thework function or the band gap of AZ<missing VAR>OSiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'nm', 1],[138.0, 19.5, '%', 2],[155.0, 700, 'mV', 2],[164.0, 75, '%', 2]

(VOC)
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38050, 38054)
 Onthe other hand, at the optimal thickness of AZ<missing VAR>OSiO2, the open circuit voltage(VOC) of the solar cells is found to be relatively insensitive to either thework function or the band gap of AZ<missing VAR>OSiO2.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'nm', 1],[122.0, 19.5, '%', 2],[139.0, 700, 'mV', 2],[148.0, 75, '%', 2]

OSiO2
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38099, 38102)
 Onthe other hand, at the optimal thickness of AZ<missing VAR>OSiO2, the open circuit voltage(VOC) of the solar cells is found to be relatively insensitive to either thework function or the band gap of AZ<missing VAR>OSiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'nm', 1],[74.0, 19.5, '%', 2],[91.0, 700, 'mV', 2],[100.0, 75, '%', 2]

(FF)
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38117, 38120)
 Whereas, regarding the fill factor(FF), AZ<missing VAR>O without SiO2 content exhibits to be the optimal choice.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'nm', 2],[56.0, 19.5, '%', 1],[73.0, 700, 'mV', 1],[82.0, 75, '%', 1]

O
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38125, 38125)
 Whereas, regarding the fill factor(FF), AZ<missing VAR>O without SiO2 content exhibits to be the optimal choice.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'nm', 2],[51.0, 19.5, '%', 1],[68.0, 700, 'mV', 1],[77.0, 75, '%', 1]

SiO2
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38129, 38131)
 Whereas, regarding the fill factor(FF), AZ<missing VAR>O without SiO2 content exhibits to be the optimal choice.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'nm', 2],[45.0, 19.5, '%', 1],[62.0, 700, 'mV', 1],[71.0, 75, '%', 1]

O/Al
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38155, 38157)
 By usingAZ<missing VAR>O/Al as electron-selective contact, we successfully realize a 19.5%-efficientsolar cell with VOC over 700 mV and FF around 75%, which is the best resultamong c<missing VAR>-Si solar cells using ZnO as electron-selective contact.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[151.0, 2, 'nm', 3],[19.0, 19.5, '%', 0],[36.0, 700, 'mV', 0],[45.0, 75, '%', 0]

VOC
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38188, 38190)
 By usingAZ<missing VAR>O/Al as electron-selective contact, we successfully realize a 19.5%-efficientsolar cell with VOC over 700 mV and FF around 75%, which is the best resultamong c<missing VAR>-Si solar cells using ZnO as electron-selective contact.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, 'nm', 3],[12.0, 19.5, '%', 0],[3.0, 700, 'mV', 0],[12.0, 75, '%', 0]

FF
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38197, 38198)
 By usingAZ<missing VAR>O/Al as electron-selective contact, we successfully realize a 19.5%-efficientsolar cell with VOC over 700 mV and FF around 75%, which is the best resultamong c<missing VAR>-Si solar cells using ZnO as electron-selective contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2, 'nm', 3],[21.0, 19.5, '%', 0],[4.0, 700, 'mV', 0],[4.0, 75, '%', 0]

Si
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38221, 38221)
 By usingAZ<missing VAR>O/Al as electron-selective contact, we successfully realize a 19.5%-efficientsolar cell with VOC over 700 mV and FF around 75%, which is the best resultamong c<missing VAR>-Si solar cells using ZnO as electron-selective contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 2, 'nm', 3],[45.0, 19.5, '%', 0],[28.0, 700, 'mV', 0],[19.0, 75, '%', 0]

ZnO
###Exploring co-sputtering of ZnO:Al and SiO2 for efficient electron-selective contacts on silicon solar cells|Sihua Zhong,Monica Morales-Masis,Mathias Mews,Lars Korte,Quentin Jeangros,Weiliang Wu,Mathieu Boccard,Christophe Ballif###
(38229, 38230)
 By usingAZ<missing VAR>O/Al as electron-selective contact, we successfully realize a 19.5%-efficientsolar cell with VOC over 700 mV and FF around 75%, which is the best resultamong c<missing VAR>-Si solar cells using ZnO as electron-selective contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 2, 'nm', 3],[53.0, 19.5, '%', 0],[36.0, 700, 'mV', 0],[27.0, 75, '%', 0]

PC
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38356, 38357)
 Despite therapid improvement in power conversion efficiency (PCE) for perovskite solarcells in recent years, the low-frequency carrier kinetics that underliepractical roadblocks such as hysteresis and degradation remain relativelypoorly understood.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 5, 'to', 3],[229.0, 12, 'percent', 3],[240.0, 200, 'Hz', 3]

In
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38416, 38416)
 In an effort to bridge this knowledge gap, we perform herecorrelated low-frequency noise (L<missing VAR>FN) and impedance spectroscopy (IS)characterization that elucidates carrier kinetics in operating perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 5, 'to', 2],[170.0, 12, 'percent', 2],[181.0, 200, 'Hz', 2]

N
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38451, 38451)
 In an effort to bridge this knowledge gap, we perform herecorrelated low-frequency noise (L<missing VAR>FN) and impedance spectroscopy (IS)characterization that elucidates carrier kinetics in operating perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 5, 'to', 2],[135.0, 12, 'percent', 2],[146.0, 200, 'Hz', 2]

(IS)
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38460, 38463)
 In an effort to bridge this knowledge gap, we perform herecorrelated low-frequency noise (L<missing VAR>FN) and impedance spectroscopy (IS)characterization that elucidates carrier kinetics in operating perovskite solarcells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 5, 'to', 2],[123.0, 12, 'percent', 2],[134.0, 200, 'Hz', 2]

SnO2
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38507, 38509)
 Specifically, we focus on planar cell geometries with a SnO2 electrontransport layer and two different hole transport layers, namely,poly(triarylamine) (PT<missing VAR>AA) and Spiro-OMeTAD.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 5, 'to', 1],[77.0, 12, 'percent', 1],[88.0, 200, 'Hz', 1]

P
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38541, 38541)
 Specifically, we focus on planar cell geometries with a SnO2 electrontransport layer and two different hole transport layers, namely,poly(triarylamine) (PT<missing VAR>AA) and Spiro-OMeTAD.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 5, 'to', 1],[45.0, 12, 'percent', 1],[56.0, 200, 'Hz', 1]

O
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38551, 38551)
 Specifically, we focus on planar cell geometries with a SnO2 electrontransport layer and two different hole transport layers, namely,poly(triarylamine) (PT<missing VAR>AA) and Spiro-OMeTAD.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 5, 'to', 1],[35.0, 12, 'percent', 1],[46.0, 200, 'Hz', 1]

P
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38558, 38558)
 PT<missing VAR>AA and Sprio-OMeTAD cells withmoderate PCEs of 5 to 12 percent possess a Lorentzian feature at 200 Hz in L<missing VAR>FNmeasurements that corresponds to a crossover from electrode to dielectricpolarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 5, 'to', 0],[28.0, 12, 'percent', 0],[39.0, 200, 'Hz', 0]

O
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38567, 38567)
 PT<missing VAR>AA and Sprio-OMeTAD cells withmoderate PCEs of 5 to 12 percent possess a Lorentzian feature at 200 Hz in L<missing VAR>FNmeasurements that corresponds to a crossover from electrode to dielectricpolarization.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 5, 'to', 0],[19.0, 12, 'percent', 0],[30.0, 200, 'Hz', 0]

PCEs
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38580, 38582)
 PT<missing VAR>AA and Sprio-OMeTAD cells withmoderate PCEs of 5 to 12 percent possess a Lorentzian feature at 200 Hz in L<missing VAR>FNmeasurements that corresponds to a crossover from electrode to dielectricpolarization.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[3.0, 5, 'to', 0],[4.0, 12, 'percent', 0],[15.0, 200, 'Hz', 0]

FN
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38602, 38603)
 PT<missing VAR>AA and Sprio-OMeTAD cells withmoderate PCEs of 5 to 12 percent possess a Lorentzian feature at 200 Hz in L<missing VAR>FNmeasurements that corresponds to a crossover from electrode to dielectricpolarization.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 5, 'to', 0],[16.0, 12, 'percent', 0],[5.0, 200, 'Hz', 0]

In
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38630, 38630)
 In comparison, Spiro-OMeTAD cells with high PCEs (15 percent)show four orders of magnitude lower L<missing VAR>FN amplitude and are accompanied by acyclostationary process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 5, 'to', 1],[44.0, 12, 'percent', 1],[33.0, 200, 'Hz', 1]

O
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38637, 38637)
 In comparison, Spiro-OMeTAD cells with high PCEs (15 percent)show four orders of magnitude lower L<missing VAR>FN amplitude and are accompanied by acyclostationary process.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 5, 'to', 1],[51.0, 12, 'percent', 1],[40.0, 200, 'Hz', 1]

PCEs
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38649, 38651)
 In comparison, Spiro-OMeTAD cells with high PCEs (15 percent)show four orders of magnitude lower L<missing VAR>FN amplitude and are accompanied by acyclostationary process.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[64.0, 5, 'to', 1],[63.0, 12, 'percent', 1],[52.0, 200, 'Hz', 1]

FN
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38673, 38674)
 In comparison, Spiro-OMeTAD cells with high PCEs (15 percent)show four orders of magnitude lower L<missing VAR>FN amplitude and are accompanied by acyclostationary process.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 5, 'to', 1],[87.0, 12, 'percent', 1],[76.0, 200, 'Hz', 1]

FN
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38760, 38761)
 Overall, this work establishes correlated L<missing VAR>FN andIS as an effective methodology for quantifying low frequency carrier kineticsin perovskite solar cells, thereby providing new physical insights that canrationally guide ongoing efforts to improve device performance,reproducibility, and stability.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 5, 'to', 3],[174.0, 12, 'percent', 3],[163.0, 200, 'Hz', 3]

IS
###Low Frequency Carrier Kinetics in Perovskite Solar Cells|Vinod K. Sangwan,Menghua Zhu,Sarah Clark,Kyle A. Luck,Tobin J. Marks,Mercouri G. Kanatzidis,Mark C. Hersam###
(38766, 38767)
 Overall, this work establishes correlated L<missing VAR>FN andIS as an effective methodology for quantifying low frequency carrier kineticsin perovskite solar cells, thereby providing new physical insights that canrationally guide ongoing efforts to improve device performance,reproducibility, and stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 5, 'to', 3],[180.0, 12, 'percent', 3],[169.0, 200, 'Hz', 3]

In
###New Strategies for Solar Cells Beyond the Visible Spectral Range|Fabio Marangi,Matteo Lombardo,Andrea Villa,Francesco Scotognella###
(39028, 39028)
 In this review, we will report recentadvancements in multijunction solar cells, inorganic-organic perovskite solarcells, organic solar cells, colloidal quantum dot solar cells focusing on theabsorption of such devices in the infrared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###New Strategies for Solar Cells Beyond the Visible Spectral Range|Fabio Marangi,Matteo Lombardo,Andrea Villa,Francesco Scotognella###
(39106, 39106)
 In addition, the use ofupconverting nanostructures will be introduced as a way to indirectly exploitinfrared radiation to increase power conversion efficiency of photovoltaicdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39327, 39327)
 The Shockley-Queisser (SQ) limit, introduced by W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1961, ',', 3],[114.0, 32.7, '%', 4],[118.0, 32.5, '%', 4],[123.0, 31, '%', 4],[131.0, 1.12, 'eV', 4],[133.0, 1.43, 'eV', 4],[137.0, 1.55, 'eV', 4],[197.0, 49, '%', 5],[201.0, 45.2, '%', 5],[206.0, 42.1, '%', 5]

W
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39338, 39338)
 The Shockley-Queisser (SQ) limit, introduced by W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1961, ',', 3],[103.0, 32.7, '%', 4],[107.0, 32.5, '%', 4],[112.0, 31, '%', 4],[120.0, 1.12, 'eV', 4],[122.0, 1.43, 'eV', 4],[126.0, 1.55, 'eV', 4],[186.0, 49, '%', 5],[190.0, 45.2, '%', 5],[195.0, 42.1, '%', 5]

H
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39345, 39345)
 Shockley and H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1961, ',', 2],[96.0, 32.7, '%', 3],[100.0, 32.5, '%', 3],[105.0, 31, '%', 3],[113.0, 1.12, 'eV', 3],[115.0, 1.43, 'eV', 3],[119.0, 1.55, 'eV', 3],[179.0, 49, '%', 4],[183.0, 45.2, '%', 4],[188.0, 42.1, '%', 4]

Si
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39402, 39402)
 For widely-studied semiconductorssuch as Si, GaAs and lead-halide perovskite, the SQ<missing VAR> limits under standard solarillumination (1-sun) are 32.7%, 32.5% and 31% for bandgaps of 1.12 eV, 1.43 eVand 1.55 eV, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 1961, ',', 1],[39.0, 32.7, '%', 0],[43.0, 32.5, '%', 0],[48.0, 31, '%', 0],[56.0, 1.12, 'eV', 0],[58.0, 1.43, 'eV', 0],[62.0, 1.55, 'eV', 0],[122.0, 49, '%', 1],[126.0, 45.2, '%', 1],[131.0, 42.1, '%', 1]

GaAs
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39405, 39406)
 For widely-studied semiconductorssuch as Si, GaAs and lead-halide perovskite, the SQ<missing VAR> limits under standard solarillumination (1-sun) are 32.7%, 32.5% and 31% for bandgaps of 1.12 eV, 1.43 eVand 1.55 eV, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1961, ',', 1],[35.0, 32.7, '%', 0],[39.0, 32.5, '%', 0],[44.0, 31, '%', 0],[52.0, 1.12, 'eV', 0],[54.0, 1.43, 'eV', 0],[58.0, 1.55, 'eV', 0],[118.0, 49, '%', 1],[122.0, 45.2, '%', 1],[127.0, 42.1, '%', 1]

S
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39419, 39419)
 For widely-studied semiconductorssuch as Si, GaAs and lead-halide perovskite, the SQ<missing VAR> limits under standard solarillumination (1-sun) are 32.7%, 32.5% and 31% for bandgaps of 1.12 eV, 1.43 eVand 1.55 eV, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1961, ',', 1],[22.0, 32.7, '%', 0],[26.0, 32.5, '%', 0],[31.0, 31, '%', 0],[39.0, 1.12, 'eV', 0],[41.0, 1.43, 'eV', 0],[45.0, 1.55, 'eV', 0],[105.0, 49, '%', 1],[109.0, 45.2, '%', 1],[114.0, 42.1, '%', 1]

Si
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39538, 39538)
 Here, we propose that the fundamental efficiencylimits for single-junction solar cells may be surpassed via photon confinement,substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si,GaAs and methylammonium lead iodide (M<missing VAR>APbI3) perovskite cells under 1-sun.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 1961, ',', 2],[97.0, 32.7, '%', 1],[93.0, 32.5, '%', 1],[88.0, 31, '%', 1],[80.0, 1.12, 'eV', 1],[78.0, 1.43, 'eV', 1],[74.0, 1.55, 'eV', 1],[14.0, 49, '%', 0],[10.0, 45.2, '%', 0],[5.0, 42.1, '%', 0]

GaAs
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39542, 39543)
 Here, we propose that the fundamental efficiencylimits for single-junction solar cells may be surpassed via photon confinement,substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si,GaAs and methylammonium lead iodide (M<missing VAR>APbI3) perovskite cells under 1-sun.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 1961, ',', 2],[101.0, 32.7, '%', 1],[97.0, 32.5, '%', 1],[92.0, 31, '%', 1],[84.0, 1.12, 'eV', 1],[82.0, 1.43, 'eV', 1],[78.0, 1.55, 'eV', 1],[18.0, 49, '%', 0],[14.0, 45.2, '%', 0],[9.0, 42.1, '%', 0]

I3
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39557, 39558)
 Here, we propose that the fundamental efficiencylimits for single-junction solar cells may be surpassed via photon confinement,substantially raising the theoretical limits to 49%, 45.2% and 42.1% for Si,GaAs and methylammonium lead iodide (M<missing VAR>APbI3) perovskite cells under 1-sun.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1961, ',', 2],[116.0, 32.7, '%', 1],[112.0, 32.5, '%', 1],[107.0, 31, '%', 1],[99.0, 1.12, 'eV', 1],[97.0, 1.43, 'eV', 1],[93.0, 1.55, 'eV', 1],[33.0, 49, '%', 0],[29.0, 45.2, '%', 0],[24.0, 42.1, '%', 0]

S
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39641, 39641)
 Suchenhancement is possible through the containment of luminescent photons withinthe solar cell, allowing the suppression of both non-radiative and radiativerecombination losses, which were considered inevitable in the classical SQ<missing VAR>model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 1961, ',', 3],[200.0, 32.7, '%', 2],[196.0, 32.5, '%', 2],[191.0, 31, '%', 2],[183.0, 1.12, 'eV', 2],[181.0, 1.43, 'eV', 2],[177.0, 1.55, 'eV', 2],[117.0, 49, '%', 1],[113.0, 45.2, '%', 1],[108.0, 42.1, '%', 1]

(VOC)
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39676, 39680)
 Importantly, restricting photon emission from the solar cells raises theopen-circuit voltage (VOC) to values approaching the semiconductor bandgaps,surpassing the theoretical VOC values predicted by the SQ<missing VAR> model.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 1961, ',', 4],[235.0, 32.7, '%', 3],[231.0, 32.5, '%', 3],[226.0, 31, '%', 3],[218.0, 1.12, 'eV', 3],[216.0, 1.43, 'eV', 3],[212.0, 1.55, 'eV', 3],[152.0, 49, '%', 2],[148.0, 45.2, '%', 2],[143.0, 42.1, '%', 2]

VOC
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39702, 39704)
 Importantly, restricting photon emission from the solar cells raises theopen-circuit voltage (VOC) to values approaching the semiconductor bandgaps,surpassing the theoretical VOC values predicted by the SQ<missing VAR> model.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 1961, ',', 4],[261.0, 32.7, '%', 3],[257.0, 32.5, '%', 3],[252.0, 31, '%', 3],[244.0, 1.12, 'eV', 3],[242.0, 1.43, 'eV', 3],[238.0, 1.55, 'eV', 3],[178.0, 49, '%', 2],[174.0, 45.2, '%', 2],[169.0, 42.1, '%', 2]

S
###Photonically-confined solar cells: prospects for exceeding the Shockley-Queisser limit|Qian Zhou,Arfa Karani,Yaxiao Lian,Baodan Zhao,Richard H. Friend,Dawei Di###
(39714, 39714)
 Importantly, restricting photon emission from the solar cells raises theopen-circuit voltage (VOC) to values approaching the semiconductor bandgaps,surpassing the theoretical VOC values predicted by the SQ<missing VAR> model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 1961, ',', 4],[273.0, 32.7, '%', 3],[269.0, 32.5, '%', 3],[264.0, 31, '%', 3],[256.0, 1.12, 'eV', 3],[254.0, 1.43, 'eV', 3],[250.0, 1.55, 'eV', 3],[190.0, 49, '%', 2],[186.0, 45.2, '%', 2],[181.0, 42.1, '%', 2]

S
###Quantum Dot Solar cells|Husien Salama###
(40030, 40030)
 Quantum Dots Super Lattice (QDSL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Quantum Dot Solar cells|Husien Salama###
(40037, 40037)
 QDSL<missing VAR>provides a mechanism for the enhancement of solar sales due to their higherband gap and absorption coefficient when compared to their bulk materialcounterpart.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Quantum Dot Solar cells|Husien Salama###
(40126, 40126)
 The mini bands in the conduction, as well as the valence band of aQDSL<missing VAR>, play an important role in solar cells because the photogenerated carriersare collected via transport using mini bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum Dot Solar cells|Husien Salama###
(40168, 40168)
 In recent years, a lot ofresearch has been done on crystal growth, structural, electrical, and opticalproperties of thin films and nanostructures as well as fabrication processesand characterization of photovoltaic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum Dot Solar cells|Husien Salama###
(40242, 40242)
 In this paper, all the recentdevelopments in future generation quantum dot solar cells like a tandem,intermediate band, and solution-processed band alignment engineering fromseveral research works will be presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Photonic Design: From Fundamental Solar Cell Physics to Computational Inverse Design|Owen D. Miller###
(40539, 40539)
 As solar cells approach fundamental efficiencylimits, their internal physics transforms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 28.3, '%', 2]

F
###Photonic Design: From Fundamental Solar Cell Physics to Computational Inverse Design|Owen D. Miller###
(40737, 40737)
 An assortment of techniques (FDTD, FEM,etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 28.3, '%', 3]

F
###Photonic Design: From Fundamental Solar Cell Physics to Computational Inverse Design|Owen D. Miller###
(40743, 40743)
 An assortment of techniques (FDTD, FEM,etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 28.3, '%', 3]

GaAs
###Single nanowire solar cells beyond the Shockley-Queisser limit|Peter Krogstrup,Henrik Ingerslev Jørgensen,Martin Heiss,Olivier Demichel,Jeppe V. Holm,Martin Aagesen,Jesper Nygard,Anna Fontcuberta i Morral###
(41094, 41095)
 Here, we show how this ispossible by studying photocurrent generation for a single core-shell p-i-n<missing VAR>junction GaAs nanowire solar cell grown on a silicon substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 180, 'mA', 1]

At
###Single nanowire solar cells beyond the Shockley-Queisser limit|Peter Krogstrup,Henrik Ingerslev Jørgensen,Martin Heiss,Olivier Demichel,Jeppe V. Holm,Martin Aagesen,Jesper Nygard,Anna Fontcuberta i Morral###
(41114, 41114)
 At one sunillumination a short circuit current of 180 mA/cm2 is obtained, which is morethan one order of magnitude higher than what would be predicted fromLambert-Beer law.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 180, 'mA', 0]

III
###Single nanowire solar cells beyond the Shockley-Queisser limit|Peter Krogstrup,Henrik Ingerslev Jørgensen,Martin Heiss,Olivier Demichel,Jeppe V. Holm,Martin Aagesen,Jesper Nygard,Anna Fontcuberta i Morral###
(41259, 41261)
 The results imply new limits for the maximum efficiencyobtainable with III-V based nanowire solar cells under one sun illumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 180, 'mA', 2]

V
###Single nanowire solar cells beyond the Shockley-Queisser limit|Peter Krogstrup,Henrik Ingerslev Jørgensen,Martin Heiss,Olivier Demichel,Jeppe V. Holm,Martin Aagesen,Jesper Nygard,Anna Fontcuberta i Morral###
(41263, 41263)
 The results imply new limits for the maximum efficiencyobtainable with III-V based nanowire solar cells under one sun illumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 180, 'mA', 2]

HOI
###Are Mobilities in Hybrid Organic-Inorganic Halide Perovskites Actually 'High'?|Thomas M. Brenner,David A. Egger,Andrew M. Rappe,Leeor Kronik,Gary Hodes,David Cahen###
(41350, 41352)
 We present an experimental and theoretical viewpoint on the electroniccarrier mobilities of typical hybrid organic-inorganic perovskites (HOIPs).
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HOI
###Are Mobilities in Hybrid Organic-Inorganic Halide Perovskites Actually 'High'?|Thomas M. Brenner,David A. Egger,Andrew M. Rappe,Leeor Kronik,Gary Hodes,David Cahen###
(41400, 41402)
While these mobilities are often quoted as high, a review of them shows thatalthough otherwise the semiconducting properties of HOIPs are impressivelygood, mobilities of HOIPs used in most solar cells are actually not that high.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HOI
###Are Mobilities in Hybrid Organic-Inorganic Halide Perovskites Actually 'High'?|Thomas M. Brenner,David A. Egger,Andrew M. Rappe,Leeor Kronik,Gary Hodes,David Cahen###
(41417, 41419)
While these mobilities are often quoted as high, a review of them shows thatalthough otherwise the semiconducting properties of HOIPs are impressivelygood, mobilities of HOIPs used in most solar cells are actually not that high.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HOIP
###Are Mobilities in Hybrid Organic-Inorganic Halide Perovskites Actually 'High'?|Thomas M. Brenner,David A. Egger,Andrew M. Rappe,Leeor Kronik,Gary Hodes,David Cahen###
(41633, 41636)
 Further research inthis direction will contribute to making HOIP solar cells even more efficientthan they already are.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Short circuit current enhancement in GaAs/AlGaAs MQW solar cells|James P. Connolly,Keith W. J. Barnham,Jenny Nelson,Christine Roberts,Malcolm Pate,John S. Roberts###
(41676, 41681)
Short circuit current enhancement in GaAs/AlGaAs MQW solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Short circuit current enhancement in GaAs/AlGaAs MQW solar cells|James P. Connolly,Keith W. J. Barnham,Jenny Nelson,Christine Roberts,Malcolm Pate,John S. Roberts###
(41685, 41685)
Short circuit current enhancement in GaAs/AlGaAs MQW solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Short circuit current enhancement in GaAs/AlGaAs MQW solar cells|James P. Connolly,Keith W. J. Barnham,Jenny Nelson,Christine Roberts,Malcolm Pate,John S. Roberts###
(41694, 41699)
 The GaAs/AlGaAs quantum well solar cell (Q<missing VAR>WSC) shows promise as a novelapproach to higher efficiency solar cells but suffers from a poor short circuitcurrent Jsc.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

C
###Short circuit current enhancement in GaAs/AlGaAs MQW solar cells|James P. Connolly,Keith W. J. Barnham,Jenny Nelson,Christine Roberts,Malcolm Pate,John S. Roberts###
(41713, 41713)
 The GaAs/AlGaAs quantum well solar cell (Q<missing VAR>WSC) shows promise as a novelapproach to higher efficiency solar cells but suffers from a poor short circuitcurrent Jsc.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Short circuit current enhancement in GaAs/AlGaAs MQW solar cells|James P. Connolly,Keith W. J. Barnham,Jenny Nelson,Christine Roberts,Malcolm Pate,John S. Roberts###
(41828, 41830)
 We present experimentalquantum efficiency (QE) data on a range of compositionally graded Q<missing VAR>WSCs anddevices in which the back surface of the cell is coated with a mirror,increasing the optical thickness of the quantum well layer in the longwavelength range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSC
###Short circuit current enhancement in GaAs/AlGaAs MQW solar cells|James P. Connolly,Keith W. J. Barnham,Jenny Nelson,Christine Roberts,Malcolm Pate,John S. Roberts###
(41962, 41964)
 The model is used to design an optimised Q<missing VAR>WSC, and projectedJsc values given.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Short circuit current enhancement in GaAs/AlGaAs MQW solar cells|James P. Connolly,Keith W. J. Barnham,Jenny Nelson,Christine Roberts,Malcolm Pate,John S. Roberts###
(41983, 41984)
 Applications including II-VI and tandem solar cells areconsidered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Short circuit current enhancement in GaAs/AlGaAs MQW solar cells|James P. Connolly,Keith W. J. Barnham,Jenny Nelson,Christine Roberts,Malcolm Pate,John S. Roberts###
(41986, 41987)
 Applications including II-VI and tandem solar cells areconsidered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42017, 42019)
Application of compact TiO2 layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 32, 'nm', 7]

P
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42108, 42108)
 Pulsed laser deposition (PLD) is a widelyadopted technology which is used in the preparation of thin films, especiallyoxide thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 32, 'nm', 5]

In
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42186, 42186)
 In the structure of perovskitesolar cells, TiO2 layer working as the n<missing VAR>-type semiconductor is used to blockholes and transport electrons into electrode, which is crucial for theperformance of whole devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 32, 'nm', 3]

TiO2
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42202, 42204)
 In the structure of perovskitesolar cells, TiO2 layer working as the n<missing VAR>-type semiconductor is used to blockholes and transport electrons into electrode, which is crucial for theperformance of whole devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 32, 'nm', 3]

P
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42268, 42268)
 We introduced the PLD technique into preparationof TiO2 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 32, 'nm', 2]

TiO2
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42281, 42283)
 We introduced the PLD technique into preparationof TiO2 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 32, 'nm', 2]

In
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42288, 42288)
 In comparison with common spin coating method, TiO2 layerprepared by this technique is ultrathin and more compact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 32, 'nm', 1]

TiO2
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42303, 42305)
 In comparison with common spin coating method, TiO2 layerprepared by this technique is ultrathin and more compact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 32, 'nm', 1]

TiO2
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42331, 42333)
 Compact TiO2(c<missing VAR>-TiO2) layers with optimized thickness of 32 nm have been prepared by thePLD method and the highest efficiency of 13.95 % for the M<missing VAR>APbI3-based solarcell devices has been achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 32, 'nm', 0]

O2
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42340, 42341)
 Compact TiO2(c<missing VAR>-TiO2) layers with optimized thickness of 32 nm have been prepared by thePLD method and the highest efficiency of 13.95 % for the M<missing VAR>APbI3-based solarcell devices has been achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 32, 'nm', 0]

P
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42366, 42366)
 Compact TiO2(c<missing VAR>-TiO2) layers with optimized thickness of 32 nm have been prepared by thePLD method and the highest efficiency of 13.95 % for the M<missing VAR>APbI3-based solarcell devices has been achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 32, 'nm', 0]

PbI3
###Application of compact TiO$_2$ layer fabricated by pulsed laser deposition in organometal trihalide perovskite solar cells|Hao Zhang,Hong Wang,Meiyang Ma,Yu Wu,Shuai Dong,Qingyu Xu###
(42392, 42394)
 Compact TiO2(c<missing VAR>-TiO2) layers with optimized thickness of 32 nm have been prepared by thePLD method and the highest efficiency of 13.95 % for the M<missing VAR>APbI3-based solarcell devices has been achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 32, 'nm', 0]

IBIC
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42420, 42423)
IBIC analysis of CdTe/CdS solar cells.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 10, 'um', 2],[122.0, 14, '%', 2],[156.0, 3.15, 'MeV', 3]

CdTe/CdS
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42429, 42433)
IBIC analysis of CdTe/CdS solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[91.0, 10, 'um', 2],[112.0, 14, '%', 2],[146.0, 3.15, 'MeV', 3]

CdS/CdTe
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42469, 42473)
 This paper reports on the investigation of the electronic properties of athin film CdS/CdTe solar cell with the Ion Beam Induced Charge (IBIC)technique.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[51.0, 10, 'um', 1],[72.0, 14, '%', 1],[106.0, 3.15, 'MeV', 2]

(IBIC)
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42491, 42496)
 This paper reports on the investigation of the electronic properties of athin film CdS/CdTe solar cell with the Ion Beam Induced Charge (IBIC)technique.
Featurization successful!
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 10, 'um', 1],[49.0, 14, '%', 1],[83.0, 3.15, 'MeV', 2]

IBIC
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42562, 42565)
 The IBIC measurements were carried out usingfocused 3.150 MeV He ions raster scanned onto the surface of the backelectrode.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 10, 'um', 1],[17.0, 14, '%', 1],[14.0, 3.15, 'MeV', 0]

He
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42581, 42581)
 The IBIC measurements were carried out usingfocused 3.150 MeV He ions raster scanned onto the surface of the backelectrode.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 10, 'um', 1],[36.0, 14, '%', 1],[2.0, 3.15, 'MeV', 0]

CC
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42614, 42615)
 The charge collection efficiency (CCE) maps show inhomogeneousresponse of the cell to be attributed to the polycrystalline nature of the CdTebulk material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 10, 'um', 2],[69.0, 14, '%', 2],[35.0, 3.15, 'MeV', 1]

CdTe
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42652, 42653)
 The charge collection efficiency (CCE) maps show inhomogeneousresponse of the cell to be attributed to the polycrystalline nature of the CdTebulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 10, 'um', 2],[107.0, 14, '%', 2],[73.0, 3.15, 'MeV', 1]

IBIC
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42672, 42675)
 Finally, the evolution of the IBIC signal vs.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 10, 'um', 3],[127.0, 14, '%', 3],[93.0, 3.15, 'MeV', 2]

CdS/CdTe
###IBIC analysis of CdTe/CdS solar cells|E. Colombo,A. Bosio,S. Calusi,L. Giuntini,A. Lo Giudice,C. Manfredotti,M. Massi,P. Olivero,A. Romeo,N. Romeo,E. Vittone###
(42711, 42715)
 the ion fluencewas studied in order to evaluate the radiation hardness of the CdS/CdTe solarcells in view of their use in solar modules for space applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[187.0, 10, 'um', 4],[166.0, 14, '%', 4],[132.0, 3.15, 'MeV', 3]

TiO2
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(42757, 42759)
Large diameter TiO2 nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 500, 'nm', 1],[300.0, 5, '%', 5]

In
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(42794, 42794)
 In the present work we grow anodic TiO2 nanotube layer with tube diameter 500 nm and an open tube mouth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 500, 'nm', 0],[265.0, 5, '%', 4]

TiO2
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(42808, 42810)
 In the present work we grow anodic TiO2 nanotube layer with tube diameter 500 nm and an open tube mouth.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 500, 'nm', 0],[249.0, 5, '%', 4]

Cs
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(42859, 42859)
 We use this morphology in dye-sensitized solarcells (D<missing VAR>SSCs) and show that these tubes allow the construction of hybridhierarchical photoanode structures of nanotubes with a defined andwall-conformance TiO2 nanoparticles decoration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 500, 'nm', 1],[200.0, 5, '%', 3]

TiO2
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(42906, 42908)
 We use this morphology in dye-sensitized solarcells (D<missing VAR>SSCs) and show that these tubes allow the construction of hybridhierarchical photoanode structures of nanotubes with a defined andwall-conformance TiO2 nanoparticles decoration.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 500, 'nm', 1],[151.0, 5, '%', 3]

At
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(42915, 42915)
 At the same time, the largediameter allows the successful establishment of an additional (insulating)blocking layer of SiO2 or Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 500, 'nm', 2],[144.0, 5, '%', 2]

SiO2
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(42956, 42958)
 At the same time, the largediameter allows the successful establishment of an additional (insulating)blocking layer of SiO2 or Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 500, 'nm', 2],[101.0, 5, '%', 2]

Al2O3
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(42962, 42965)
 At the same time, the largediameter allows the successful establishment of an additional (insulating)blocking layer of SiO2 or Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 500, 'nm', 2],[94.0, 5, '%', 2]

In
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(43013, 43013)
 In such a D<missing VAR>SSC structure,the solar cell efficiency under back side illumination with AM<missing VAR>1.5 illuminationis enhanced from 5% neat tube to 7 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 500, 'nm', 4],[46.0, 5, '%', 0]

SSC
###Large diameter TiO$_2$ nanotubes enable integration of conformed hierarchical and blocking layers for enhanced dye-sensitized solar cell efficiency|Abdelhamid Elzarka,Ning Liu,Imgon Hwang,Mustafa Kamal,Patrik Schmuki###
(43020, 43022)
 In such a D<missing VAR>SSC structure,the solar cell efficiency under back side illumination with AM<missing VAR>1.5 illuminationis enhanced from 5% neat tube to 7 %.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 500, 'nm', 4],[37.0, 5, '%', 0]

III
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43087, 43089)
Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 50, 'mV', 3],[220.0, 25, 'mV', 4]

V/Ge
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43091, 43093)
Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[137.0, 50, 'mV', 3],[216.0, 25, 'mV', 4]

III
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43130, 43132)
 This paper addresses the influence of III-V nucleation routines on Gesubstrates for the growth of high efficiency multijunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 50, 'mV', 2],[177.0, 25, 'mV', 3]

V
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43134, 43134)
 This paper addresses the influence of III-V nucleation routines on Gesubstrates for the growth of high efficiency multijunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 50, 'mV', 2],[175.0, 25, 'mV', 3]

Ge
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43142, 43142)
 This paper addresses the influence of III-V nucleation routines on Gesubstrates for the growth of high efficiency multijunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 50, 'mV', 2],[167.0, 25, 'mV', 3]

Ge
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43277, 43277)
 Electroluminescence measurements show that both the Ge bottom celland the Ga(In)As middle cell present a VOC gain of 25 mV each.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 50, 'mV', 1],[32.0, 25, 'mV', 0]

Ga(In)As
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43288, 43292)
 Electroluminescence measurements show that both the Ge bottom celland the Ga(In)As middle cell present a VOC gain of 25 mV each.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 50, 'mV', 1],[17.0, 25, 'mV', 0]

VOC
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43302, 43304)
 Electroluminescence measurements show that both the Ge bottom celland the Ga(In)As middle cell present a VOC gain of 25 mV each.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 50, 'mV', 1],[5.0, 25, 'mV', 0]

Ge
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43343, 43343)
 This resultindicates that the first stages of the growth not only affect the Ge subcellitself but also to subsequent subcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 50, 'mV', 2],[34.0, 25, 'mV', 1]

Ge
###Impact of the III-V/Ge nucleation routine on the performance of high efficiency multijunction solar cells|Laura Barrutia,Ivan García,Enrique Barrigon,Mario Ochoa,Carlos Algora,Ignacio Rey-Stolle###
(43405, 43405)
 This study highlights the impact of thenucleation routine design in the performance of high efficiency multijunctionsolar cell based on Ge substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 50, 'mV', 3],[96.0, 25, 'mV', 2]

In
###Material selection method for a perovskite solar cell design based on the genetic algorithm|Eungkyun Kim,Indranil Bhattacharya###
(43447, 43447)
 In this work, we propose a method of selecting the most desirablecombinations of material for a perovskite solar cell design utilizing thegenetic algorithm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3, ',', 1]

CH3NH3Pb
###Material selection method for a perovskite solar cell design based on the genetic algorithm|Eungkyun Kim,Indranil Bhattacharya###
(43519, 43525)
 Solar cells based on the methylammonium lead halide,CH3NH3PbX<missing VAR>3, attract researchers due to the benefits of their high absorptioncoefficient and sharp Urbach tail, long diffusion length and carrier lifetime,and high carrier mobility.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0.1111111111111111,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3, ',', 0]

In
###Material selection method for a perovskite solar cell design based on the genetic algorithm|Eungkyun Kim,Indranil Bhattacharya###
(43612, 43612)
 In our work, we assigned stability index,power conversion efficiency index, and cost-effectiveness index for eachmaterial based on the available experimental data in the literature, and ouralgorithm determined the TiO2/CH3NH3PbI2.1Br0.9/Spiro-OMeTAD as the most wellbalanced solution in terms of cost, efficiency, and stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 3, ',', 2]

TiO2/CH3NH3PbI2.1Br0.9
###Material selection method for a perovskite solar cell design based on the genetic algorithm|Eungkyun Kim,Indranil Bhattacharya###
(43683, 43697)
 In our work, we assigned stability index,power conversion efficiency index, and cost-effectiveness index for eachmaterial based on the available experimental data in the literature, and ouralgorithm determined the TiO2/CH3NH3PbI2.1Br0.9/Spiro-OMeTAD as the most wellbalanced solution in terms of cost, efficiency, and stability.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[156.0, 3, ',', 2]

O
###Material selection method for a perovskite solar cell design based on the genetic algorithm|Eungkyun Kim,Indranil Bhattacharya###
(43701, 43701)
 In our work, we assigned stability index,power conversion efficiency index, and cost-effectiveness index for eachmaterial based on the available experimental data in the literature, and ouralgorithm determined the TiO2/CH3NH3PbI2.1Br0.9/Spiro-OMeTAD as the most wellbalanced solution in terms of cost, efficiency, and stability.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 3, ',', 2]

In
###A microstructural analysis of 2D halide perovskites: Stability and functionality|Susmita Bhattacharya,Goutam Kumar Chandra,P. Predeep###
(44079, 44079)
 In this context, this reviewdiscusses the material properties of 2-dimensional halide perovskite andrelated optoelectronic devices aiming particularly for solar cell application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 2, 'D', 6]

C
###Lithography free method to synthesize the ultra-low reflection inverted-pyramid arrays for ultra-thin silicon solar cell|Anil Kumar,Divya Rani,Anjali Sain,Neeraj Joshi,Ravi Kumar Varma,Mrinal Dutta,Arup Samanta###
(44335, 44335)
 Here, we present a lithography freemethod for the fabrication of inverted pyramid arrays by using a modified metalassisted chemical etching (M<missing VAR>ACE) method.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.5, '%', 2]

In
###Solar cell efficiency, diode factor and interface recombination: insights from photoluminescence|T. Wang,F. Ehre,T. P. Weiss,B. Veith-Wolf,V. Titova,N. Valle,M. Melchiorre,J. Schmidt,S. Siebentritt###
(44651, 44651)
 In addition, we show that backside recombinationreduces the open circuit voltage in CuInSe2 solar cells by more than 40 mV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 40, 'mV', 0]

CuInSe2
###Solar cell efficiency, diode factor and interface recombination: insights from photoluminescence|T. Wang,F. Ehre,T. P. Weiss,B. Veith-Wolf,V. Titova,N. Valle,M. Melchiorre,J. Schmidt,S. Siebentritt###
(44679, 44682)
 In addition, we show that backside recombinationreduces the open circuit voltage in CuInSe2 solar cells by more than 40 mV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 40, 'mV', 0]

Ga
###Solar cell efficiency, diode factor and interface recombination: insights from photoluminescence|T. Wang,F. Ehre,T. P. Weiss,B. Veith-Wolf,V. Titova,N. Valle,M. Melchiorre,J. Schmidt,S. Siebentritt###
(44703, 44703)
Passivation by a Ga gradient is shown to be as efficient as a passivation bydielectric layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 40, 'mV', 1]

BBr3
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44896, 44898)
A First-principles study on ABBr3 (A  Cs, Rb, K, Na; B  Ge, Sn) halide perovskites for photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 25.8, '%', 1],[293.0, 1.1, 'to', 5],[294.0, 1.97, 'eV', 5],[331.0, 105, 'cm', 6]

Cs
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44904, 44904)
A First-principles study on ABBr3 (A  Cs, Rb, K, Na; B  Ge, Sn) halide perovskites for photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 25.8, '%', 1],[287.0, 1.1, 'to', 5],[288.0, 1.97, 'eV', 5],[325.0, 105, 'cm', 6]

Rb
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44907, 44907)
A First-principles study on ABBr3 (A  Cs, Rb, K, Na; B  Ge, Sn) halide perovskites for photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 25.8, '%', 1],[284.0, 1.1, 'to', 5],[285.0, 1.97, 'eV', 5],[322.0, 105, 'cm', 6]

K
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44910, 44910)
A First-principles study on ABBr3 (A  Cs, Rb, K, Na; B  Ge, Sn) halide perovskites for photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 25.8, '%', 1],[281.0, 1.1, 'to', 5],[282.0, 1.97, 'eV', 5],[319.0, 105, 'cm', 6]

Na
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44913, 44913)
A First-principles study on ABBr3 (A  Cs, Rb, K, Na; B  Ge, Sn) halide perovskites for photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 25.8, '%', 1],[278.0, 1.1, 'to', 5],[279.0, 1.97, 'eV', 5],[316.0, 105, 'cm', 6]

B
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44916, 44916)
A First-principles study on ABBr3 (A  Cs, Rb, K, Na; B  Ge, Sn) halide perovskites for photovoltaic applications.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 25.8, '%', 1],[275.0, 1.1, 'to', 5],[276.0, 1.97, 'eV', 5],[313.0, 105, 'cm', 6]

Ge
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44919, 44919)
A First-principles study on ABBr3 (A  Cs, Rb, K, Na; B  Ge, Sn) halide perovskites for photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 25.8, '%', 1],[272.0, 1.1, 'to', 5],[273.0, 1.97, 'eV', 5],[310.0, 105, 'cm', 6]

Sn
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44922, 44922)
A First-principles study on ABBr3 (A  Cs, Rb, K, Na; B  Ge, Sn) halide perovskites for photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 25.8, '%', 1],[269.0, 1.1, 'to', 5],[270.0, 1.97, 'eV', 5],[307.0, 105, 'cm', 6]

In
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44936, 44936)
 In recent years, halide perovskite-based solar cells have received intensiveattention, and demonstrated power conversion efficiency as high as 25.8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 25.8, '%', 0],[255.0, 1.1, 'to', 4],[256.0, 1.97, 'eV', 4],[293.0, 105, 'cm', 5]

Pb
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(44996, 44996)
 Withregard to the toxicity of Pb and the instability of organic elements, allinorganic lead-free perovskites (IL<missing VAR>Ps) have been extensively studied to achievecomparable or greater photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 25.8, '%', 1],[195.0, 1.1, 'to', 3],[196.0, 1.97, 'eV', 3],[233.0, 105, 'cm', 4]

I
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45023, 45023)
 Withregard to the toxicity of Pb and the instability of organic elements, allinorganic lead-free perovskites (IL<missing VAR>Ps) have been extensively studied to achievecomparable or greater photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 25.8, '%', 1],[168.0, 1.1, 'to', 3],[169.0, 1.97, 'eV', 3],[206.0, 105, 'cm', 4]

In
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45052, 45052)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 25.8, '%', 2],[139.0, 1.1, 'to', 2],[140.0, 1.97, 'eV', 2],[177.0, 105, 'cm', 3]

I
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45060, 45060)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 25.8, '%', 2],[131.0, 1.1, 'to', 2],[132.0, 1.97, 'eV', 2],[169.0, 105, 'cm', 3]

BBr3
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45094, 45096)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 25.8, '%', 2],[95.0, 1.1, 'to', 2],[96.0, 1.97, 'eV', 2],[133.0, 105, 'cm', 3]

Cs
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45104, 45104)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 25.8, '%', 2],[87.0, 1.1, 'to', 2],[88.0, 1.97, 'eV', 2],[125.0, 105, 'cm', 3]

Rb
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45107, 45107)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 25.8, '%', 2],[84.0, 1.1, 'to', 2],[85.0, 1.97, 'eV', 2],[122.0, 105, 'cm', 3]

K
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45110, 45110)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 25.8, '%', 2],[81.0, 1.1, 'to', 2],[82.0, 1.97, 'eV', 2],[119.0, 105, 'cm', 3]

Na
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45115, 45115)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 25.8, '%', 2],[76.0, 1.1, 'to', 2],[77.0, 1.97, 'eV', 2],[114.0, 105, 'cm', 3]

B
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45120, 45120)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 25.8, '%', 2],[71.0, 1.1, 'to', 2],[72.0, 1.97, 'eV', 2],[109.0, 105, 'cm', 3]

Sn
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45123, 45123)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 25.8, '%', 2],[68.0, 1.1, 'to', 2],[69.0, 1.97, 'eV', 2],[106.0, 105, 'cm', 3]

Ge
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45128, 45128)
 In order to develop IL<missing VAR>Ps as analternative for solar cell applications, we performed first-principlescalculations of ABBr3 perovskites (A  Cs, Rb, K, and Na, and B  Sn, and Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 25.8, '%', 2],[63.0, 1.1, 'to', 2],[64.0, 1.97, 'eV', 2],[101.0, 105, 'cm', 3]

I
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45171, 45171)
 All these IL<missing VAR>Ps exhibited adirect bandgap in the range of 1.10 to 1.97 eV, highly beneficial for absorbingsolar energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 25.8, '%', 4],[20.0, 1.1, 'to', 0],[21.0, 1.97, 'eV', 0],[58.0, 105, 'cm', 1]

I
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45214, 45214)
 Furthermore, these IL<missing VAR>Ps demonstrated significant opticalabsorption (over 105 cm-1) in the whole UV-Vis spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 25.8, '%', 5],[23.0, 1.1, 'to', 1],[22.0, 1.97, 'eV', 1],[15.0, 105, 'cm', 0]

UV
###A First-principles study on ABBr3 (A = Cs, Rb, K, Na; B = Ge, Sn) halide perovskites for photovoltaic applications|Dibyajyoti Saikia,Mahfooz Alam,Jayanta Bera,Atanu Betal,Appala Naidu Gandhi,Satyajit Sahu###
(45240, 45241)
 Furthermore, these IL<missing VAR>Ps demonstrated significant opticalabsorption (over 105 cm-1) in the whole UV-Vis spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[261.0, 25.8, '%', 5],[49.0, 1.1, 'to', 1],[48.0, 1.97, 'eV', 1],[11.0, 105, 'cm', 0]

Si
###Direct generation of charge carriers in c-Si solar cells due to embedded nanoparticles|Martin Kirkengen,Joakim Bergli,Yuri M. Galperin###
(45300, 45300)
Direct generation of charge carriers in c<missing VAR>-Si solar cells due to embedded nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Direct generation of charge carriers in c-Si solar cells due to embedded nanoparticles|Martin Kirkengen,Joakim Bergli,Yuri M. Galperin###
(45456, 45456)
 In this work, we show that such afield creates electron-hole-pairs without phonon assistance, and discuss theimportance of this effect compared to radiation from the particle and lossesdue to heating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuIn
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45546, 45547)
Indium-Gallium Segregation in CuInx<missing VAR>Ga1-xSe2 An ab initio based Monte Carlo Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 19.9, '%', 1]

Ga1-xSe2
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45549, 45554)
Indium-Gallium Segregation in CuInx<missing VAR>Ga1-xSe2 An ab initio based Monte Carlo Study.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[72.0, 19.9, '%', 1]

CuIn
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45581, 45582)
 Thin-film solar cells with CuInx<missing VAR>Ga1-xSe2 (CIG<missing VAR>S) absorber are stillfar below their efficiency limit, although lab cells reach already 19.9%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 19.9, '%', 0]

Ga1-xSe2
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45584, 45589)
 Thin-film solar cells with CuInx<missing VAR>Ga1-xSe2 (CIG<missing VAR>S) absorber are stillfar below their efficiency limit, although lab cells reach already 19.9%.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[37.0, 19.9, '%', 0]

CI
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45592, 45593)
 Thin-film solar cells with CuInx<missing VAR>Ga1-xSe2 (CIG<missing VAR>S) absorber are stillfar below their efficiency limit, although lab cells reach already 19.9%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 19.9, '%', 0]

S
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45595, 45595)
 Thin-film solar cells with CuInx<missing VAR>Ga1-xSe2 (CIG<missing VAR>S) absorber are stillfar below their efficiency limit, although lab cells reach already 19.9%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 19.9, '%', 0]

CI
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45705, 45706)
 Only at highertemperatures, CIG<missing VAR>S becomes more and more a homogeneous alloy.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 19.9, '%', 3]

S
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45708, 45708)
 Only at highertemperatures, CIG<missing VAR>S becomes more and more a homogeneous alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 19.9, '%', 3]

Ga
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45738, 45738)
 A larger degreeof inhomogeneity for Ga-rich CIG<missing VAR>S persists over a wide temperature range, whichmay contribute to the low observed efficiency of Ga-rich CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 19.9, '%', 4]

CI
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45742, 45743)
 A larger degreeof inhomogeneity for Ga-rich CIG<missing VAR>S persists over a wide temperature range, whichmay contribute to the low observed efficiency of Ga-rich CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 19.9, '%', 4]

S
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45745, 45745)
 A larger degreeof inhomogeneity for Ga-rich CIG<missing VAR>S persists over a wide temperature range, whichmay contribute to the low observed efficiency of Ga-rich CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 19.9, '%', 4]

Ga
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45779, 45779)
 A larger degreeof inhomogeneity for Ga-rich CIG<missing VAR>S persists over a wide temperature range, whichmay contribute to the low observed efficiency of Ga-rich CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 19.9, '%', 4]

CI
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45783, 45784)
 A larger degreeof inhomogeneity for Ga-rich CIG<missing VAR>S persists over a wide temperature range, whichmay contribute to the low observed efficiency of Ga-rich CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 19.9, '%', 4]

S
###Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study|Christian D. R. Ludwig,Thomas Gruhn,Claudia Felser,Tanja Schilling,Johannes Windeln,Peter Kratzer###
(45786, 45786)
 A larger degreeof inhomogeneity for Ga-rich CIG<missing VAR>S persists over a wide temperature range, whichmay contribute to the low observed efficiency of Ga-rich CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 19.9, '%', 4]

Ag
###Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell|Tong Li,Lei Dai,Chun Jiang###
(45900, 45900)
 We numerically demonstrate theabsorption enhancement in symmetrical structure based on the mode couplingbetween the localized plasmonic mode in Ag strip pair and the excited waveguidemode in silicon slab.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 90, '%', 2]

Si
###Mode Splitting for Efficient Plasmoinc Thin-film Solar Cell|Tong Li,Lei Dai,Chun Jiang###
(45983, 45983)
 We compare ourstructure with bare thin-film Si solar cell, and results show that theintegrated quantum efficiency is improved by nearly 90% in such thin geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 90, '%', 0]

CdTe
###Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Zhijuan Xu,Huikai Zhong,Zhiqian Wu,Shisheng Lin###
(46065, 46066)
Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2.08, '%', 2],[124.0, 3.1, '%', 2]

CdTe
###Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Zhijuan Xu,Huikai Zhong,Zhiqian Wu,Shisheng Lin###
(46103, 46104)
 We report a type of solar cells based on graphene/CdTe Schottkyheterostructure, which can be improved by surface engineering as graphene isone-atomic thin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2.08, '%', 1],[86.0, 3.1, '%', 1]

CdSe
###Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Zhijuan Xu,Huikai Zhong,Zhiqian Wu,Shisheng Lin###
(46152, 46153)
 By coating a layer of ultrathin CdSe quantum dots ontographene/CdTe heterostructure, the power conversion efficiency is increasedfrom 2.08% to 3.1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2.08, '%', 0],[37.0, 3.1, '%', 0]

CdTe
###Semiconductor quantum dots enhanced graphene/CdTe heterostructure solar cells by photo-induced doping|Xiaoqiang Li,Shengjiao Zhang,Peng Wang,Zhijuan Xu,Huikai Zhong,Zhiqian Wu,Shisheng Lin###
(46164, 46165)
 By coating a layer of ultrathin CdSe quantum dots ontographene/CdTe heterostructure, the power conversion efficiency is increasedfrom 2.08% to 3.1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2.08, '%', 0],[25.0, 3.1, '%', 0]

CO
###Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation|Aqing Chen,Kaigui Zhu,Qingyi Shao,Zhenguo Ji###
(46288, 46289)
Understanding effects of T<missing VAR>CO work function on the performance of organic solar cells by numerical simulation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation|Aqing Chen,Kaigui Zhu,Qingyi Shao,Zhenguo Ji###
(46337, 46337)
 The influences of work function of transparent conducting oxides (T<missing VAR>CO) on theper-formance of organic solar cells, including open circuit voltage, conversionefficiency and fill factor, has been simulated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation|Aqing Chen,Kaigui Zhu,Qingyi Shao,Zhenguo Ji###
(46427, 46428)
 It is obtained that fornon-Ohmic contact the open circuit voltage and conversion efficiency increasemonotonically with the T<missing VAR>CO work function but keep constant for Ohmic contact.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation|Aqing Chen,Kaigui Zhu,Qingyi Shao,Zhenguo Ji###
(46497, 46497)
Fill factor decreases and increases with the electrode work function when theelectrode work function is below and above a critical value (4.2 e<missing VAR>V for T<missing VAR>CO and4.5 e<missing VAR>V for back-contact), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation|Aqing Chen,Kaigui Zhu,Qingyi Shao,Zhenguo Ji###
(46502, 46503)
Fill factor decreases and increases with the electrode work function when theelectrode work function is below and above a critical value (4.2 e<missing VAR>V for T<missing VAR>CO and4.5 e<missing VAR>V for back-contact), respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation|Aqing Chen,Kaigui Zhu,Qingyi Shao,Zhenguo Ji###
(46511, 46511)
Fill factor decreases and increases with the electrode work function when theelectrode work function is below and above a critical value (4.2 e<missing VAR>V for T<missing VAR>CO and4.5 e<missing VAR>V for back-contact), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Understanding effects of TCO work function on the performance of organic solar cells by numerical simulation|Aqing Chen,Kaigui Zhu,Qingyi Shao,Zhenguo Ji###
(46548, 46549)
 The results of this simulation aresignificant in the choice of T<missing VAR>CO contacts to optimize organic planarheterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Oxide Heterostructures for Efficient Solar Cells|Elias Assmann,Peter Blaha,Robert Laskowski,Karsten Held,Satoshi Okamoto,Giorgio Sangiovanni###
(46628, 46628)
 In particular, LaVO3grown on SrTiO3 has a direct band gap 1.1 e<missing VAR>V in the optimal range as well asan internal potential gradient, which can greatly help to separate thephoto-generated electron-hole pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaVO3
###Oxide Heterostructures for Efficient Solar Cells|Elias Assmann,Peter Blaha,Robert Laskowski,Karsten Held,Satoshi Okamoto,Giorgio Sangiovanni###
(46633, 46636)
 In particular, LaVO3grown on SrTiO3 has a direct band gap 1.1 e<missing VAR>V in the optimal range as well asan internal potential gradient, which can greatly help to separate thephoto-generated electron-hole pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Oxide Heterostructures for Efficient Solar Cells|Elias Assmann,Peter Blaha,Robert Laskowski,Karsten Held,Satoshi Okamoto,Giorgio Sangiovanni###
(46643, 46646)
 In particular, LaVO3grown on SrTiO3 has a direct band gap 1.1 e<missing VAR>V in the optimal range as well asan internal potential gradient, which can greatly help to separate thephoto-generated electron-hole pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Oxide Heterostructures for Efficient Solar Cells|Elias Assmann,Peter Blaha,Robert Laskowski,Karsten Held,Satoshi Okamoto,Giorgio Sangiovanni###
(46661, 46661)
 In particular, LaVO3grown on SrTiO3 has a direct band gap 1.1 e<missing VAR>V in the optimal range as well asan internal potential gradient, which can greatly help to separate thephoto-generated electron-hole pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaVO3
###Oxide Heterostructures for Efficient Solar Cells|Elias Assmann,Peter Blaha,Robert Laskowski,Karsten Held,Satoshi Okamoto,Giorgio Sangiovanni###
(46731, 46734)
 Furthermore, oxide heterostructures affordthe flexibility to combine LaVO3 with other materials such as LaFeO3 in orderto achieve even higher efficiencies with band-gap graded solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaFeO3
###Oxide Heterostructures for Efficient Solar Cells|Elias Assmann,Peter Blaha,Robert Laskowski,Karsten Held,Satoshi Okamoto,Giorgio Sangiovanni###
(46746, 46749)
 Furthermore, oxide heterostructures affordthe flexibility to combine LaVO3 with other materials such as LaFeO3 in orderto achieve even higher efficiencies with band-gap graded solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAlAs
###Realization of Carrier Tunneling from InAlAs Quantum Dots to AlAs|Masataka Koyama,Dai Suzuki,Xiangmeng Lu,Yoshiaki Nakata,Shunichi Muto###
(46817, 46819)
Realization of Carrier Tunneling from InAlAs Quantum Dots to AlAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1.1, 'ns', 2],[107.0, 390, 'ps', 2],[121.0, 4, 'to', 2],[122.0, 2, 'nm', 2],[170.0, 2, 'nm', 2],[173.0, 0.6, 'ns', 2]

AlAs
###Realization of Carrier Tunneling from InAlAs Quantum Dots to AlAs|Masataka Koyama,Dai Suzuki,Xiangmeng Lu,Yoshiaki Nakata,Shunichi Muto###
(46827, 46828)
Realization of Carrier Tunneling from InAlAs Quantum Dots to AlAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1.1, 'ns', 2],[98.0, 390, 'ps', 2],[112.0, 4, 'to', 2],[113.0, 2, 'nm', 2],[161.0, 2, 'nm', 2],[164.0, 0.6, 'ns', 2]

In0.6Al0.4As
###Realization of Carrier Tunneling from InAlAs Quantum Dots to AlAs|Masataka Koyama,Dai Suzuki,Xiangmeng Lu,Yoshiaki Nakata,Shunichi Muto###
(46863, 46867)
 With the aim of improving solar cell efficiency, a structure for realizingelectron tunneling from In0.6Al0.4As quantum dots (Q<missing VAR>Ds) through an Al0.4Ga0.6Asbarrier to AlAs has been grown using molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.1, 'ns', 1],[59.0, 390, 'ps', 1],[73.0, 4, 'to', 1],[74.0, 2, 'nm', 1],[122.0, 2, 'nm', 1],[125.0, 0.6, 'ns', 1]

Ds
###Realization of Carrier Tunneling from InAlAs Quantum Dots to AlAs|Masataka Koyama,Dai Suzuki,Xiangmeng Lu,Yoshiaki Nakata,Shunichi Muto###
(46875, 46875)
 With the aim of improving solar cell efficiency, a structure for realizingelectron tunneling from In0.6Al0.4As quantum dots (Q<missing VAR>Ds) through an Al0.4Ga0.6Asbarrier to AlAs has been grown using molecular beam epitaxy.
EXCEPTION 3: IndexError for Ds
Al0.4Ga0.6As
[48.0, 1.1, 'ns', 1],[51.0, 390, 'ps', 1],[65.0, 4, 'to', 1],[66.0, 2, 'nm', 1],[114.0, 2, 'nm', 1],[117.0, 0.6, 'ns', 1]

TiO2
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47087, 47089)
Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47112, 47114)
 We use free-standing TiO2 nanotube membranes that are transferred onto FT<missing VAR>Oslides in front-side illuminated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47128, 47128)
 We use free-standing TiO2 nanotube membranes that are transferred onto FT<missing VAR>Oslides in front-side illuminated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47130, 47130)
 We use free-standing TiO2 nanotube membranes that are transferred onto FT<missing VAR>Oslides in front-side illuminated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47155, 47155)
 We use free-standing TiO2 nanotube membranes that are transferred onto FT<missing VAR>Oslides in front-side illuminated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47187, 47189)
 Weinvestigate the key parameters for solar cell arrangement of self-orderedanodic TiO2 nanotube layers on the FT<missing VAR>O substrate and namely the influence ofthe annealing procedure on the D<missing VAR>SSC light conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47199, 47199)
 Weinvestigate the key parameters for solar cell arrangement of self-orderedanodic TiO2 nanotube layers on the FT<missing VAR>O substrate and namely the influence ofthe annealing procedure on the D<missing VAR>SSC light conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47201, 47201)
 Weinvestigate the key parameters for solar cell arrangement of self-orderedanodic TiO2 nanotube layers on the FT<missing VAR>O substrate and namely the influence ofthe annealing procedure on the D<missing VAR>SSC light conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSC
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47227, 47229)
 Weinvestigate the key parameters for solar cell arrangement of self-orderedanodic TiO2 nanotube layers on the FT<missing VAR>O substrate and namely the influence ofthe annealing procedure on the D<missing VAR>SSC light conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSC
###Enhanced Performance of Dye-Sensitized Solar Cells based on TiO2 Nanotube Membranes using Optimized Annealing Profile|F. Mohammadpour,M. Moradi,K. Lee,G. Cha,S. So,A. Kahnt,D. M. Guldi,M. Altomare,P. Schmuki###
(47269, 47271)
 The resultsshow that using an optimal temperature annealing profile can significantlyenhance the D<missing VAR>SSC efficiency (in our case 9.8 %), as it leads to a markedlylower density of trapping states in the tube oxide, and thus to stronglyimproved electron transport properties.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Towards the maximum efficiency design of a perovskite solar cell by material properties tuning: A multidimensional approach|Manfred Georg Kratzenberg,Ricardo Ruther,Carlos Renato Rambo###
(47400, 47401)
 To obtain significant increases in the Power Conversion Efficiency (PCE) ofsolar cells, future cell research and development should be based on theconcomitant improvement of multiple material properties, rather than on thestate-of-the-art one or two-dimensional improvements.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Towards the maximum efficiency design of a perovskite solar cell by material properties tuning: A multidimensional approach|Manfred Georg Kratzenberg,Ricardo Ruther,Carlos Renato Rambo###
(47475, 47475)
 In this context,researchers should know, which combined material properties and cell designparameters lead to the highest efficiency increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSC)
###Towards the maximum efficiency design of a perovskite solar cell by material properties tuning: A multidimensional approach|Manfred Georg Kratzenberg,Ricardo Ruther,Carlos Renato Rambo###
(47597, 47601)
 Such knowledge becomes available by simulation and numericaloptimization, which we present for a Perovskite Solar Cell(PSC)in a hypercubespace of variables.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Efficient long-distance energy transport in molecular systems through adiabatic passage|Arend G. Dijkstra,Almut Beige###
(47691, 47691)
 In thispaper, we therefore propose and analyse an energy transport mechanism whichemploys adiabatic passages between the states of an artificially designedantenna molecular system to significantly enhance the conversion of incominglight into internal energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47894, 47894)
Simulation approach to reach the SQ<missing VAR> limit in CIG<missing VAR>S-based dual-heterojunction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 47, '%', 3],[154.0, 80.07, '%', 3]

CI
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47901, 47902)
Simulation approach to reach the SQ<missing VAR> limit in CIG<missing VAR>S-based dual-heterojunction solar cell.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 47, '%', 3],[146.0, 80.07, '%', 3]

S
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47904, 47904)
Simulation approach to reach the SQ<missing VAR> limit in CIG<missing VAR>S-based dual-heterojunction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 47, '%', 3],[144.0, 80.07, '%', 3]

In
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47917, 47917)
 In this article, we demonstrate the design and simulation of ahighly-efficient n<missing VAR>-CdS/p<missing VAR>-CIG<missing VAR>S/p+-CG<missing VAR>S dual heterojunction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 47, '%', 2],[131.0, 80.07, '%', 2]

CdS
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47947, 47948)
 In this article, we demonstrate the design and simulation of ahighly-efficient n<missing VAR>-CdS/p<missing VAR>-CIG<missing VAR>S/p+-CG<missing VAR>S dual heterojunction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 47, '%', 2],[100.0, 80.07, '%', 2]

CI
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47952, 47953)
 In this article, we demonstrate the design and simulation of ahighly-efficient n<missing VAR>-CdS/p<missing VAR>-CIG<missing VAR>S/p+-CG<missing VAR>S dual heterojunction solar cell.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 47, '%', 2],[95.0, 80.07, '%', 2]

S
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47955, 47955)
 In this article, we demonstrate the design and simulation of ahighly-efficient n<missing VAR>-CdS/p<missing VAR>-CIG<missing VAR>S/p+-CG<missing VAR>S dual heterojunction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 47, '%', 2],[93.0, 80.07, '%', 2]

C
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47960, 47960)
 In this article, we demonstrate the design and simulation of ahighly-efficient n<missing VAR>-CdS/p<missing VAR>-CIG<missing VAR>S/p+-CG<missing VAR>S dual heterojunction solar cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 47, '%', 2],[88.0, 80.07, '%', 2]

S
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47962, 47962)
 In this article, we demonstrate the design and simulation of ahighly-efficient n<missing VAR>-CdS/p<missing VAR>-CIG<missing VAR>S/p+-CG<missing VAR>S dual heterojunction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 47, '%', 2],[86.0, 80.07, '%', 2]

SC
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47984, 47985)
 Thesimulation was performed using SCAPS-1D<missing VAR> software with reported experimentalphysical parameters.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 47, '%', 1],[63.0, 80.07, '%', 1]

PS
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(47987, 47988)
 Thesimulation was performed using SCAPS-1D<missing VAR> software with reported experimentalphysical parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 47, '%', 1],[60.0, 80.07, '%', 1]

V
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(48032, 48032)
 The simulation performance of our proposed design arises47% with Voc0.98 V, Jsc59.94 m<missing VAR>A/cm2 and FF80.07%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 47, '%', 0],[16.0, 80.07, '%', 0]

FF
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(48046, 48047)
 The simulation performance of our proposed design arises47% with Voc0.98 V, Jsc59.94 m<missing VAR>A/cm2 and FF80.07%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 47, '%', 0],[1.0, 80.07, '%', 0]

H
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(48122, 48122)
 The highshort circuit current and hence the high efficiency is predominantly originatedfrom the longer wavelength absorption of photon through a tail-states-assistedtwo-step upconversion in dual heterojunction (D<missing VAR>H) and thus reaches the SQ<missing VAR>detailed balance limit of D<missing VAR>H solar cell.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 47, '%', 1],[74.0, 80.07, '%', 1]

S
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(48133, 48133)
 The highshort circuit current and hence the high efficiency is predominantly originatedfrom the longer wavelength absorption of photon through a tail-states-assistedtwo-step upconversion in dual heterojunction (D<missing VAR>H) and thus reaches the SQ<missing VAR>detailed balance limit of D<missing VAR>H solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 47, '%', 1],[85.0, 80.07, '%', 1]

H
###Simulation approach to reach the SQ limit in CIGS-based dual-heterojunction solar cell|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(48146, 48146)
 The highshort circuit current and hence the high efficiency is predominantly originatedfrom the longer wavelength absorption of photon through a tail-states-assistedtwo-step upconversion in dual heterojunction (D<missing VAR>H) and thus reaches the SQ<missing VAR>detailed balance limit of D<missing VAR>H solar cell.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 47, '%', 1],[98.0, 80.07, '%', 1]

Y6
###Whats special about Y6; the working mechanism of neat Y6 organic solar cell|Elifnaz Saglamkaya,Artem Musiienko,Mohammad Saeed Shadabroo,Bowen Sun,Sreelakshmi Chandrabose,Giulia Lo Gerfo M,Niek F van Hulst,Dieter Neher,Safa Shoaee###
(48167, 48168)
Whats special about Y6; the working mechanism of neat Y6 organic solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 20, '%', 1],[131.0, 4.5, '%', 3]

Y6
###Whats special about Y6; the working mechanism of neat Y6 organic solar cell|Elifnaz Saglamkaya,Artem Musiienko,Mohammad Saeed Shadabroo,Bowen Sun,Sreelakshmi Chandrabose,Giulia Lo Gerfo M,Niek F van Hulst,Dieter Neher,Safa Shoaee###
(48181, 48182)
Whats special about Y6; the working mechanism of neat Y6 organic solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 20, '%', 1],[117.0, 4.5, '%', 3]

NF
###Whats special about Y6; the working mechanism of neat Y6 organic solar cell|Elifnaz Saglamkaya,Artem Musiienko,Mohammad Saeed Shadabroo,Bowen Sun,Sreelakshmi Chandrabose,Giulia Lo Gerfo M,Niek F van Hulst,Dieter Neher,Safa Shoaee###
(48198, 48199)
 Non-fullerene acceptors (NFA) have delivered advance in bulk heterojunctionorganic solar cell efficiencies, with the significant milestone of 20% now insight.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 20, '%', 0],[100.0, 4.5, '%', 2]

In
###Whats special about Y6; the working mechanism of neat Y6 organic solar cell|Elifnaz Saglamkaya,Artem Musiienko,Mohammad Saeed Shadabroo,Bowen Sun,Sreelakshmi Chandrabose,Giulia Lo Gerfo M,Niek F van Hulst,Dieter Neher,Safa Shoaee###
(48275, 48275)
 In this work we present neat Y6 device with efficiency above4.5%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 20, '%', 2],[24.0, 4.5, '%', 0]

Y6
###Whats special about Y6; the working mechanism of neat Y6 organic solar cell|Elifnaz Saglamkaya,Artem Musiienko,Mohammad Saeed Shadabroo,Bowen Sun,Sreelakshmi Chandrabose,Giulia Lo Gerfo M,Niek F van Hulst,Dieter Neher,Safa Shoaee###
(48287, 48288)
 In this work we present neat Y6 device with efficiency above4.5%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 20, '%', 2],[11.0, 4.5, '%', 0]

Y6
###Whats special about Y6; the working mechanism of neat Y6 organic solar cell|Elifnaz Saglamkaya,Artem Musiienko,Mohammad Saeed Shadabroo,Bowen Sun,Sreelakshmi Chandrabose,Giulia Lo Gerfo M,Niek F van Hulst,Dieter Neher,Safa Shoaee###
(48347, 48348)
 We thoroughly investigate mechanisms of charge generation andrecombination as well as transport in order to understand what is special aboutY6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 20, '%', 3],[48.0, 4.5, '%', 1]

Y6
###Whats special about Y6; the working mechanism of neat Y6 organic solar cell|Elifnaz Saglamkaya,Artem Musiienko,Mohammad Saeed Shadabroo,Bowen Sun,Sreelakshmi Chandrabose,Giulia Lo Gerfo M,Niek F van Hulst,Dieter Neher,Safa Shoaee###
(48357, 48358)
 Our data suggest Y6 generates bulk free charges, with ambipolar mobility,which can be extracted in the presence of transport layers<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 20, '%', 4],[58.0, 4.5, '%', 2]

In
###Nanophotonic Light Management for Perovskite-Silicon Tandem Solar Cells|D. Chen,P. Manley,P. Tockhorn,D. Eisenhauer,G. Köppel,M. Hammerschmidt,S. Burger,S. Albrecht,C. Becker,K. Jäger###
(48649, 48649)
  In this contribution we use numerical simulations to study, how wellhexagonal sinusoidal nanotextures in the perovskite top-cell can reduce thereflective losses of the combined tandem device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 7, 'mA', 1],[88.0, 91, '%', 2],[104.0, 98, '%', 2],[134.0, 500, 'nm', 2],[140.0, 100, '%', 2]

In
###Nanophotonic Light Management for Perovskite-Silicon Tandem Solar Cells|D. Chen,P. Manley,P. Tockhorn,D. Eisenhauer,G. Köppel,M. Hammerschmidt,S. Burger,S. Albrecht,C. Becker,K. Jäger###
(48806, 48806)
 In a first attempt to experimentally realize suchnanophotonically structured perovskite solar cells for monolithic tandems, weinvestigate the morphology of perovskite layers, which are deposited ontosinusoidally structured substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 7, 'mA', 4],[69.0, 91, '%', 1],[53.0, 98, '%', 1],[23.0, 500, 'nm', 1],[17.0, 100, '%', 1]

In
###Resonant Silicon Nanoparticles for Enhanced Light Harvesting in Halide Perovskite Solar Cells|A. D. Furasova,E. Calabró,E. Lamanna,E. Y. Tiguntseva,E. Ushakova,E. V. Ubyivovk,V. Y. Mikhailovskii,A. A. Zakhidov,S. V. Makarov,A. Di Carlo###
(49062, 49062)
In turn, low-loss and chemically inert resonant silicon nanoparticles allow forlight trapping and enhancement at nanoscale, being suitable for thin filmphotovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 18.8, '%', 2],[151.0, 79, '%', 2]

TiO2
###Resonant Silicon Nanoparticles for Enhanced Light Harvesting in Halide Perovskite Solar Cells|A. D. Furasova,E. Calabró,E. Lamanna,E. Y. Tiguntseva,E. Ushakova,E. V. Ubyivovk,V. Y. Mikhailovskii,A. A. Zakhidov,S. V. Makarov,A. Di Carlo###
(49158, 49160)
 Here photocurrent and fill-factor enhancements inmeso-superstructured organometal halide perovskite solar cells, incorporatingresonant silicon nanoparticles between mesoporous TiO2 transport and activelayers, are demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 18.8, '%', 1],[53.0, 79, '%', 1]

CH3NH3PbI3
###Resonant Silicon Nanoparticles for Enhanced Light Harvesting in Halide Perovskite Solar Cells|A. D. Furasova,E. Calabró,E. Lamanna,E. Y. Tiguntseva,E. Ushakova,E. V. Ubyivovk,V. Y. Mikhailovskii,A. A. Zakhidov,S. V. Makarov,A. Di Carlo###
(49242, 49250)
 This results in a boost of the device efficiency upto 18.8% and fill factor up to 79%, being a record among the previouslyreported values on nanoparticles incorporation into CH3NH3PbI3 (M<missing VAR>APbI3)perovskites based solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 18.8, '%', 0],[29.0, 79, '%', 0]

I3
###Resonant Silicon Nanoparticles for Enhanced Light Harvesting in Halide Perovskite Solar Cells|A. D. Furasova,E. Calabró,E. Lamanna,E. Y. Tiguntseva,E. Ushakova,E. V. Ubyivovk,V. Y. Mikhailovskii,A. A. Zakhidov,S. V. Makarov,A. Di Carlo###
(49256, 49257)
 This results in a boost of the device efficiency upto 18.8% and fill factor up to 79%, being a record among the previouslyreported values on nanoparticles incorporation into CH3NH3PbI3 (M<missing VAR>APbI3)perovskites based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 18.8, '%', 0],[43.0, 79, '%', 0]

Si
###Resonant Silicon Nanoparticles for Enhanced Light Harvesting in Halide Perovskite Solar Cells|A. D. Furasova,E. Calabró,E. Lamanna,E. Y. Tiguntseva,E. Ushakova,E. V. Ubyivovk,V. Y. Mikhailovskii,A. A. Zakhidov,S. V. Makarov,A. Di Carlo###
(49291, 49291)
 Theoretical modeling and opticalcharacterization reveal the significant role of Si nanoparticles for increasedlight absorption in the active layer rather than for better charge separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 18.8, '%', 1],[78.0, 79, '%', 1]

In
###Solar Cell Surface Defect Inspection Based on Multispectral Convolutional Neural Network|Haiyong Chen,Yue Pang,Qidi Hu,Kun Liu###
(49502, 49502)
 In order to solve the problem, a visual defect detectionmethod based on multi-spectral deep convolutional neural network (CNN) isdesigned in this paper.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 94.3, '%', 8]

(CNN)
###Solar Cell Surface Defect Inspection Based on Multispectral Convolutional Neural Network|Haiyong Chen,Yue Pang,Qidi Hu,Kun Liu###
(49542, 49546)
 In order to solve the problem, a visual defect detectionmethod based on multi-spectral deep convolutional neural network (CNN) isdesigned in this paper.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 94.3, '%', 8]

CNN
###Solar Cell Surface Defect Inspection Based on Multispectral Convolutional Neural Network|Haiyong Chen,Yue Pang,Qidi Hu,Kun Liu###
(49567, 49569)
 Firstly, a selected CNN model is established.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 94.3, '%', 7]

CNN
###Solar Cell Surface Defect Inspection Based on Multispectral Convolutional Neural Network|Haiyong Chen,Yue Pang,Qidi Hu,Kun Liu###
(49632, 49634)
 The optimal CNN modelstructure is selected.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 94.3, '%', 5]

CNN
###Solar Cell Surface Defect Inspection Based on Multispectral Convolutional Neural Network|Haiyong Chen,Yue Pang,Qidi Hu,Kun Liu###
(49717, 49719)
 Thus, amulti-spectral CNN model is constructed to enhance the discrimination abilityof the model to distinguish between complex texture background features anddefect features.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 94.3, '%', 2]

K
###Solar Cell Surface Defect Inspection Based on Multispectral Convolutional Neural Network|Haiyong Chen,Yue Pang,Qidi Hu,Kun Liu###
(49777, 49777)
 Finally, some experimental results and K-fold cross validationshow that the multi-spectral deep CNN model can effectively detect the solarcell surface defects with higher accuracy and greater adaptability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 94.3, '%', 1]

CNN
###Solar Cell Surface Defect Inspection Based on Multispectral Convolutional Neural Network|Haiyong Chen,Yue Pang,Qidi Hu,Kun Liu###
(49798, 49800)
 Finally, some experimental results and K-fold cross validationshow that the multi-spectral deep CNN model can effectively detect the solarcell surface defects with higher accuracy and greater adaptability.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 94.3, '%', 1]

In
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(49933, 49933)
 In this article, we theoretically demonstrate multilevel impurityphotovoltaic effect in an efficient silicon dual-homojunction solar cell thatensures an extended absorption of longer wavelength light.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 25.4, '%', 2],[185.0, 37.99, 'mA', 2],[188.0, 2, ',', 2],[202.0, 85.76, '%', 2],[234.0, 33.4, '%', 3],[243.0, 51.56, 'mA', 3],[246.0, 2, ',', 3],[261.0, 82.03, '%', 3],[288.0, 35.4, '%', 4],[311.0, 3.76, 'mA', 4]

Ni
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50005, 50005)
 Along with suitablecontact work functions (Ni and Ta as anode and cathode, respectively), threeimpurity energy levels from acceptor type impurities (One from Tl and two fromZn) have been introduced in the energy gap of the absorber layer in the solarcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 25.4, '%', 1],[113.0, 37.99, 'mA', 1],[116.0, 2, ',', 1],[130.0, 85.76, '%', 1],[162.0, 33.4, '%', 2],[171.0, 51.56, 'mA', 2],[174.0, 2, ',', 2],[189.0, 82.03, '%', 2],[216.0, 35.4, '%', 3],[239.0, 3.76, 'mA', 3]

Ta
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50009, 50009)
 Along with suitablecontact work functions (Ni and Ta as anode and cathode, respectively), threeimpurity energy levels from acceptor type impurities (One from Tl and two fromZn) have been introduced in the energy gap of the absorber layer in the solarcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 25.4, '%', 1],[109.0, 37.99, 'mA', 1],[112.0, 2, ',', 1],[126.0, 85.76, '%', 1],[158.0, 33.4, '%', 2],[167.0, 51.56, 'mA', 2],[170.0, 2, ',', 2],[185.0, 82.03, '%', 2],[212.0, 35.4, '%', 3],[235.0, 3.76, 'mA', 3]

Tl
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50046, 50046)
 Along with suitablecontact work functions (Ni and Ta as anode and cathode, respectively), threeimpurity energy levels from acceptor type impurities (One from Tl and two fromZn) have been introduced in the energy gap of the absorber layer in the solarcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 25.4, '%', 1],[72.0, 37.99, 'mA', 1],[75.0, 2, ',', 1],[89.0, 85.76, '%', 1],[121.0, 33.4, '%', 2],[130.0, 51.56, 'mA', 2],[133.0, 2, ',', 2],[148.0, 82.03, '%', 2],[175.0, 35.4, '%', 3],[198.0, 3.76, 'mA', 3]

Zn
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50055, 50055)
 Along with suitablecontact work functions (Ni and Ta as anode and cathode, respectively), threeimpurity energy levels from acceptor type impurities (One from Tl and two fromZn) have been introduced in the energy gap of the absorber layer in the solarcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 25.4, '%', 1],[63.0, 37.99, 'mA', 1],[66.0, 2, ',', 1],[80.0, 85.76, '%', 1],[112.0, 33.4, '%', 2],[121.0, 51.56, 'mA', 2],[124.0, 2, ',', 2],[139.0, 82.03, '%', 2],[166.0, 35.4, '%', 3],[189.0, 3.76, 'mA', 3]

Si
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50094, 50094)
 The pristine Si solar cell shows a PCE<missing VAR> of 25.4% with J<missing VAR>SC 37.99 mA/cm2,VOC0.780V and FF85.76%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 25.4, '%', 0],[24.0, 37.99, 'mA', 0],[27.0, 2, ',', 0],[41.0, 85.76, '%', 0],[73.0, 33.4, '%', 1],[82.0, 51.56, 'mA', 1],[85.0, 2, ',', 1],[100.0, 82.03, '%', 1],[127.0, 35.4, '%', 2],[150.0, 3.76, 'mA', 2]

PC
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50104, 50105)
 The pristine Si solar cell shows a PCE<missing VAR> of 25.4% with J<missing VAR>SC 37.99 mA/cm2,VOC0.780V and FF85.76%, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 25.4, '%', 0],[13.0, 37.99, 'mA', 0],[16.0, 2, ',', 0],[30.0, 85.76, '%', 0],[62.0, 33.4, '%', 1],[71.0, 51.56, 'mA', 1],[74.0, 2, ',', 1],[89.0, 82.03, '%', 1],[116.0, 35.4, '%', 2],[139.0, 3.76, 'mA', 2]

SC
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50116, 50117)
 The pristine Si solar cell shows a PCE<missing VAR> of 25.4% with J<missing VAR>SC 37.99 mA/cm2,VOC0.780V and FF85.76%, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 25.4, '%', 0],[1.0, 37.99, 'mA', 0],[4.0, 2, ',', 0],[18.0, 85.76, '%', 0],[50.0, 33.4, '%', 1],[59.0, 51.56, 'mA', 1],[62.0, 2, ',', 1],[77.0, 82.03, '%', 1],[104.0, 35.4, '%', 2],[127.0, 3.76, 'mA', 2]

VOC0.780V
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50125, 50129)
 The pristine Si solar cell shows a PCE<missing VAR> of 25.4% with J<missing VAR>SC 37.99 mA/cm2,VOC0.780V and FF85.76%, respectively.
Featurization terminated normally.
0,0,0,0,0,0.20634920634920634,0,0.26455026455026454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5291005291005291,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 25.4, '%', 0],[7.0, 37.99, 'mA', 0],[4.0, 2, ',', 0],[6.0, 85.76, '%', 0],[38.0, 33.4, '%', 1],[47.0, 51.56, 'mA', 1],[50.0, 2, ',', 1],[65.0, 82.03, '%', 1],[92.0, 35.4, '%', 2],[115.0, 3.76, 'mA', 2]

FF
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50133, 50134)
 The pristine Si solar cell shows a PCE<missing VAR> of 25.4% with J<missing VAR>SC 37.99 mA/cm2,VOC0.780V and FF85.76%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 25.4, '%', 0],[15.0, 37.99, 'mA', 0],[12.0, 2, ',', 0],[1.0, 85.76, '%', 0],[33.0, 33.4, '%', 1],[42.0, 51.56, 'mA', 1],[45.0, 2, ',', 1],[60.0, 82.03, '%', 1],[87.0, 35.4, '%', 2],[110.0, 3.76, 'mA', 2]

Tl
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50148, 50148)
 The incorporation of Tl impurity levelalone provides a PCE<missing VAR> of 33.4%, with J<missing VAR>SC 51.56 mA/cm2, VOC0.789 V andFF82.03%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 25.4, '%', 1],[30.0, 37.99, 'mA', 1],[27.0, 2, ',', 1],[13.0, 85.76, '%', 1],[19.0, 33.4, '%', 0],[28.0, 51.56, 'mA', 0],[31.0, 2, ',', 0],[46.0, 82.03, '%', 0],[73.0, 35.4, '%', 1],[96.0, 3.76, 'mA', 1]

PC
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50161, 50162)
 The incorporation of Tl impurity levelalone provides a PCE<missing VAR> of 33.4%, with J<missing VAR>SC 51.56 mA/cm2, VOC0.789 V andFF82.03%, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 25.4, '%', 1],[43.0, 37.99, 'mA', 1],[40.0, 2, ',', 1],[26.0, 85.76, '%', 1],[5.0, 33.4, '%', 0],[14.0, 51.56, 'mA', 0],[17.0, 2, ',', 0],[32.0, 82.03, '%', 0],[59.0, 35.4, '%', 1],[82.0, 3.76, 'mA', 1]

SC
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50174, 50175)
 The incorporation of Tl impurity levelalone provides a PCE<missing VAR> of 33.4%, with J<missing VAR>SC 51.56 mA/cm2, VOC0.789 V andFF82.03%, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 25.4, '%', 1],[56.0, 37.99, 'mA', 1],[53.0, 2, ',', 1],[39.0, 85.76, '%', 1],[7.0, 33.4, '%', 0],[1.0, 51.56, 'mA', 0],[4.0, 2, ',', 0],[19.0, 82.03, '%', 0],[46.0, 35.4, '%', 1],[69.0, 3.76, 'mA', 1]

VOC0.789
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50182, 50185)
 The incorporation of Tl impurity levelalone provides a PCE<missing VAR> of 33.4%, with J<missing VAR>SC 51.56 mA/cm2, VOC0.789 V andFF82.03%, respectively.
Featurization terminated normally.
0,0,0,0,0,0.28289709573323774,0,0.35855145213338113,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35855145213338113,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 25.4, '%', 1],[64.0, 37.99, 'mA', 1],[61.0, 2, ',', 1],[47.0, 85.76, '%', 1],[15.0, 33.4, '%', 0],[6.0, 51.56, 'mA', 0],[3.0, 2, ',', 0],[9.0, 82.03, '%', 0],[36.0, 35.4, '%', 1],[59.0, 3.76, 'mA', 1]

V
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50187, 50187)
 The incorporation of Tl impurity levelalone provides a PCE<missing VAR> of 33.4%, with J<missing VAR>SC 51.56 mA/cm2, VOC0.789 V andFF82.03%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 25.4, '%', 1],[69.0, 37.99, 'mA', 1],[66.0, 2, ',', 1],[52.0, 85.76, '%', 1],[20.0, 33.4, '%', 0],[11.0, 51.56, 'mA', 0],[8.0, 2, ',', 0],[7.0, 82.03, '%', 0],[34.0, 35.4, '%', 1],[57.0, 3.76, 'mA', 1]

FF
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50192, 50193)
 The incorporation of Tl impurity levelalone provides a PCE<missing VAR> of 33.4%, with J<missing VAR>SC 51.56 mA/cm2, VOC0.789 V andFF82.03%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 25.4, '%', 1],[74.0, 37.99, 'mA', 1],[71.0, 2, ',', 1],[57.0, 85.76, '%', 1],[25.0, 33.4, '%', 0],[16.0, 51.56, 'mA', 0],[13.0, 2, ',', 0],[1.0, 82.03, '%', 0],[28.0, 35.4, '%', 1],[51.0, 3.76, 'mA', 1]

PC
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50203, 50204)
 The PCE<missing VAR> of the solar cell further enhances to 35.4%with a further enhancement of the short circuit current by 3.76 mA/cm2 due tothe inclusion of Zn impurity into the optimized structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 25.4, '%', 2],[85.0, 37.99, 'mA', 2],[82.0, 2, ',', 2],[68.0, 85.76, '%', 2],[36.0, 33.4, '%', 1],[27.0, 51.56, 'mA', 1],[24.0, 2, ',', 1],[9.0, 82.03, '%', 1],[17.0, 35.4, '%', 0],[40.0, 3.76, 'mA', 0]

Zn
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50260, 50260)
 The PCE<missing VAR> of the solar cell further enhances to 35.4%with a further enhancement of the short circuit current by 3.76 mA/cm2 due tothe inclusion of Zn impurity into the optimized structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 25.4, '%', 2],[142.0, 37.99, 'mA', 2],[139.0, 2, ',', 2],[125.0, 85.76, '%', 2],[93.0, 33.4, '%', 1],[84.0, 51.56, 'mA', 1],[81.0, 2, ',', 1],[66.0, 82.03, '%', 1],[39.0, 35.4, '%', 0],[16.0, 3.76, 'mA', 0]

SC
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50283, 50284)
 This enhancement ofthe J<missing VAR>SC and hence PCE<missing VAR> is resulted from the longer wavelength light absorptiondue to impurity-assisted two-step photon upconversion in the solar cell.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 25.4, '%', 3],[165.0, 37.99, 'mA', 3],[162.0, 2, ',', 3],[148.0, 85.76, '%', 3],[116.0, 33.4, '%', 2],[107.0, 51.56, 'mA', 2],[104.0, 2, ',', 2],[89.0, 82.03, '%', 2],[62.0, 35.4, '%', 1],[39.0, 3.76, 'mA', 1]

PC
###Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities|Shaikh Khaled Mostaque,Bipanko Kumar Mondal,Jaker Hossain###
(50290, 50291)
 This enhancement ofthe J<missing VAR>SC and hence PCE<missing VAR> is resulted from the longer wavelength light absorptiondue to impurity-assisted two-step photon upconversion in the solar cell.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 25.4, '%', 3],[172.0, 37.99, 'mA', 3],[169.0, 2, ',', 3],[155.0, 85.76, '%', 3],[123.0, 33.4, '%', 2],[114.0, 51.56, 'mA', 2],[111.0, 2, ',', 2],[96.0, 82.03, '%', 2],[69.0, 35.4, '%', 1],[46.0, 3.76, 'mA', 1]

InGaN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(50763, 50765)
InGaN Metal-IN Solar Cell optimized efficiency and fabrication tolerance.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 19.8, '%', 4],[322.0, 2, ',', 5],[342.0, 4, ',', 5],[474.0, 8, ',', 6]

IN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(50769, 50770)
InGaN Metal-IN Solar Cell optimized efficiency and fabrication tolerance.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 19.8, '%', 4],[317.0, 2, ',', 5],[337.0, 4, ',', 5],[469.0, 8, ',', 6]

(InGaN)
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(50797, 50801)
 Choosing the Indium Gallium Nitride (InGaN) ternary alloy for thin filmssolar cells might yield high benefits concerning efficiency and reliability,because its bandgap can be tuned through the Indium composition and radiationshave little destructive effect on it.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 19.8, '%', 3],[286.0, 2, ',', 4],[306.0, 4, ',', 4],[438.0, 8, ',', 5]

InGaN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(50895, 50897)
 It may also reveal challenges becausegood quality p<missing VAR>-doped InGaN layers are difficult to elaborate.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 19.8, '%', 2],[190.0, 2, ',', 3],[210.0, 4, ',', 3],[342.0, 8, ',', 4]

In
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(50910, 50910)
 In this letter, anew design for an InGaN thin film solar cell is optimized, where the player ofa PIN structure is replaced by a Schottky contact, leading to a Metal-IN (M<missing VAR>IN)structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 19.8, '%', 1],[177.0, 2, ',', 2],[197.0, 4, ',', 2],[329.0, 8, ',', 3]

InGaN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(50928, 50930)
 In this letter, anew design for an InGaN thin film solar cell is optimized, where the player ofa PIN structure is replaced by a Schottky contact, leading to a Metal-IN (M<missing VAR>IN)structure.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 19.8, '%', 1],[157.0, 2, ',', 2],[177.0, 4, ',', 2],[309.0, 8, ',', 3]

PIN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(50956, 50958)
 In this letter, anew design for an InGaN thin film solar cell is optimized, where the player ofa PIN structure is replaced by a Schottky contact, leading to a Metal-IN (M<missing VAR>IN)structure.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 19.8, '%', 1],[129.0, 2, ',', 2],[149.0, 4, ',', 2],[281.0, 8, ',', 3]

IN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(50983, 50984)
 In this letter, anew design for an InGaN thin film solar cell is optimized, where the player ofa PIN structure is replaced by a Schottky contact, leading to a Metal-IN (M<missing VAR>IN)structure.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 19.8, '%', 1],[103.0, 2, ',', 2],[123.0, 4, ',', 2],[255.0, 8, ',', 3]

N
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(50989, 50989)
 In this letter, anew design for an InGaN thin film solar cell is optimized, where the player ofa PIN structure is replaced by a Schottky contact, leading to a Metal-IN (M<missing VAR>IN)structure.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 19.8, '%', 1],[98.0, 2, ',', 2],[118.0, 4, ',', 2],[250.0, 8, ',', 3]

IN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51013, 51014)
 With a simulated efficiency of 19.8%, the M<missing VAR>IN structure performsbetter than the previously studied Schottky structure, while increasing itsfabrication tolerance and thus functional reliability a.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 19.8, '%', 0],[73.0, 2, ',', 1],[93.0, 4, ',', 1],[225.0, 8, ',', 2]

(InGaN)
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51122, 51126)
 Owing to its goodtolerance to radiations [1], its high light absorption [2, 3] and itsIndium-composition-tuned bandgap [4, 5], the Indium Gallium Nitride (InGaN)ternary alloy is a good candidate for high-efficiency-high-reliability solarcells able to operate in harsh environments.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 19.8, '%', 1],[35.0, 2, ',', 0],[15.0, 4, ',', 0],[113.0, 8, ',', 1]

InGaN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51172, 51174)
 Unfortunately, InGaN p<missing VAR>-doping isstill a challenge, owing to InGaN residual n<missing VAR>-doping [6], the lack of dedicatedac-ceptors [7] and the complex fabrication process itself [8, 9].
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 19.8, '%', 2],[85.0, 2, ',', 1],[65.0, 4, ',', 1],[65.0, 8, ',', 0]

InGaN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51194, 51196)
 Unfortunately, InGaN p<missing VAR>-doping isstill a challenge, owing to InGaN residual n<missing VAR>-doping [6], the lack of dedicatedac-ceptors [7] and the complex fabrication process itself [8, 9].
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 19.8, '%', 2],[107.0, 2, ',', 1],[87.0, 4, ',', 1],[43.0, 8, ',', 0]

InGaN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51337, 51339)
 These drawbacks stillprevent InGaN solar cells to be competitive with other well established III-Vand silicon technologies [11].
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 19.8, '%', 4],[250.0, 2, ',', 3],[230.0, 4, ',', 3],[98.0, 8, ',', 2]

III
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51359, 51361)
 These drawbacks stillprevent InGaN solar cells to be competitive with other well established III-Vand silicon technologies [11].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 19.8, '%', 4],[272.0, 2, ',', 3],[252.0, 4, ',', 3],[120.0, 8, ',', 2]

V
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51363, 51363)
 These drawbacks stillprevent InGaN solar cells to be competitive with other well established III-Vand silicon technologies [11].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 19.8, '%', 4],[276.0, 2, ',', 3],[256.0, 4, ',', 3],[124.0, 8, ',', 2]

In
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51377, 51377)
 In this letter, is proposed a new Metal-IN (M<missing VAR>IN)InGaN solar cell structure where the InGaN p<missing VAR>-doped layer is removed andreplaced by a Schottky contact, lifting one of the above mentioned drawbacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 19.8, '%', 5],[290.0, 2, ',', 4],[270.0, 4, ',', 4],[138.0, 8, ',', 3]

IN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51394, 51395)
 In this letter, is proposed a new Metal-IN (M<missing VAR>IN)InGaN solar cell structure where the InGaN p<missing VAR>-doped layer is removed andreplaced by a Schottky contact, lifting one of the above mentioned drawbacks.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 19.8, '%', 5],[307.0, 2, ',', 4],[287.0, 4, ',', 4],[155.0, 8, ',', 3]

N
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51400, 51400)
 In this letter, is proposed a new Metal-IN (M<missing VAR>IN)InGaN solar cell structure where the InGaN p<missing VAR>-doped layer is removed andreplaced by a Schottky contact, lifting one of the above mentioned drawbacks.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 19.8, '%', 5],[313.0, 2, ',', 4],[293.0, 4, ',', 4],[161.0, 8, ',', 3]

InGaN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51404, 51406)
 In this letter, is proposed a new Metal-IN (M<missing VAR>IN)InGaN solar cell structure where the InGaN p<missing VAR>-doped layer is removed andreplaced by a Schottky contact, lifting one of the above mentioned drawbacks.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 19.8, '%', 5],[317.0, 2, ',', 4],[297.0, 4, ',', 4],[165.0, 8, ',', 3]

InGaN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51418, 51420)
 In this letter, is proposed a new Metal-IN (M<missing VAR>IN)InGaN solar cell structure where the InGaN p<missing VAR>-doped layer is removed andreplaced by a Schottky contact, lifting one of the above mentioned drawbacks.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 19.8, '%', 5],[331.0, 2, ',', 4],[311.0, 4, ',', 4],[179.0, 8, ',', 3]

InGaN
###InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(51553, 51555)
 Aset of realistic physical models based on actual measurements is used tosimulate and optimize its behavior and performance using mathematicallyrigorous multi-criteria optimization methods, aiming to show that bothefficiency and fabrication tolerances are better than the previously describedsimple InGaN Schottky solar cell [12].
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[547.0, 19.8, '%', 6],[466.0, 2, ',', 5],[446.0, 4, ',', 5],[314.0, 8, ',', 4]

F
###Very high efficiency of low cost graphite-based solar cell by improving the fill factor using optimal ion concentration in polymer electrolyte|Dui Yanto Rahman,Fisca Dian Utami,Asep Ridwan Setiawan,Euis Sustini,Mikrajuddin Abdullah###
(51697, 51697)
 Suspension of graphite powder in mineral water wassimply dropped onto the surface of fluorine-doped tin oxide glass (FT<missing VAR>O) to forma thick film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 6.97, '%', 1]

O
###Very high efficiency of low cost graphite-based solar cell by improving the fill factor using optimal ion concentration in polymer electrolyte|Dui Yanto Rahman,Fisca Dian Utami,Asep Ridwan Setiawan,Euis Sustini,Mikrajuddin Abdullah###
(51699, 51699)
 Suspension of graphite powder in mineral water wassimply dropped onto the surface of fluorine-doped tin oxide glass (FT<missing VAR>O) to forma thick film.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 6.97, '%', 1]

PV
###Very high efficiency of low cost graphite-based solar cell by improving the fill factor using optimal ion concentration in polymer electrolyte|Dui Yanto Rahman,Fisca Dian Utami,Asep Ridwan Setiawan,Euis Sustini,Mikrajuddin Abdullah###
(51950, 51951)
 We achieved the high efficiency by manipulating the cell fillfactor through optimizing the ion concentration in PVA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 6.97, '%', 4]

LiOH
###Very high efficiency of low cost graphite-based solar cell by improving the fill factor using optimal ion concentration in polymer electrolyte|Dui Yanto Rahman,Fisca Dian Utami,Asep Ridwan Setiawan,Euis Sustini,Mikrajuddin Abdullah###
(51954, 51956)
LiOH polymerelectrolyte.
Featurization terminated normally.
0.3333333333333333,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 6.97, '%', 5]

LiOH
###Very high efficiency of low cost graphite-based solar cell by improving the fill factor using optimal ion concentration in polymer electrolyte|Dui Yanto Rahman,Fisca Dian Utami,Asep Ridwan Setiawan,Euis Sustini,Mikrajuddin Abdullah###
(51984, 51986)
 We also propose an equation to describe the effect of LiOHconcentration and efficiency and we also provide strong correlation between thecell efficiency and the polymer conductivity<missing PERIOD>
Featurization terminated normally.
0.3333333333333333,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 6.97, '%', 6]

F
###Degradation Kinetics of Inverted Perovskite Solar Cells|Mejd Alsari,Andrew J. Pearson,Jacob Tse-Wei Wang,Zhiping Wang,Augusto Montisci,Neil C. Greenham,Henry J. Snaith,Samuele Lilliu,Richard H. Friend###
(52375, 52375)
 We explore the degradation behaviour under continuous illumination and directoxygen exposure of inverted unencapsulatedformamidinium(FA)0.83Cs0.17Pb(I0.8Br0.2)3, CH3NH3PbI3, and CH3NH3PbI3-xClxperovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs0.17Pb(I0.8Br0.2)3
###Degradation Kinetics of Inverted Perovskite Solar Cells|Mejd Alsari,Andrew J. Pearson,Jacob Tse-Wei Wang,Zhiping Wang,Augusto Montisci,Neil C. Greenham,Henry J. Snaith,Samuele Lilliu,Richard H. Friend###
(52379, 52388)
 We explore the degradation behaviour under continuous illumination and directoxygen exposure of inverted unencapsulatedformamidinium(FA)0.83Cs0.17Pb(I0.8Br0.2)3, CH3NH3PbI3, and CH3NH3PbI3-xClxperovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14388489208633096,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5755395683453238,0,0.0407673860911271,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23980815347721823,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Degradation Kinetics of Inverted Perovskite Solar Cells|Mejd Alsari,Andrew J. Pearson,Jacob Tse-Wei Wang,Zhiping Wang,Augusto Montisci,Neil C. Greenham,Henry J. Snaith,Samuele Lilliu,Richard H. Friend###
(52391, 52399)
 We explore the degradation behaviour under continuous illumination and directoxygen exposure of inverted unencapsulatedformamidinium(FA)0.83Cs0.17Pb(I0.8Br0.2)3, CH3NH3PbI3, and CH3NH3PbI3-xClxperovskite solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3-x
###Degradation Kinetics of Inverted Perovskite Solar Cells|Mejd Alsari,Andrew J. Pearson,Jacob Tse-Wei Wang,Zhiping Wang,Augusto Montisci,Neil C. Greenham,Henry J. Snaith,Samuele Lilliu,Richard H. Friend###
(52404, 52414)
 We explore the degradation behaviour under continuous illumination and directoxygen exposure of inverted unencapsulatedformamidinium(FA)0.83Cs0.17Pb(I0.8Br0.2)3, CH3NH3PbI3, and CH3NH3PbI3-xClxperovskite solar cells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CH3NH3PbI3-x
###Degradation Kinetics of Inverted Perovskite Solar Cells|Mejd Alsari,Andrew J. Pearson,Jacob Tse-Wei Wang,Zhiping Wang,Augusto Montisci,Neil C. Greenham,Henry J. Snaith,Samuele Lilliu,Richard H. Friend###
(52482, 52492)
 We continuously test the devices in-situ andin-operando with current-voltage sweeps, transient photocurrent, and transientphotovoltage measurements, and find that degradation in the CH3NH3PbI3-xClxsolar cells due to oxygen exposure occurs over shorter timescales thanFA0.83Cs0.17Pb(I0.8Br0.2)3 mixed-cation devices.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

F
###Degradation Kinetics of Inverted Perovskite Solar Cells|Mejd Alsari,Andrew J. Pearson,Jacob Tse-Wei Wang,Zhiping Wang,Augusto Montisci,Neil C. Greenham,Henry J. Snaith,Samuele Lilliu,Richard H. Friend###
(52519, 52519)
 We continuously test the devices in-situ andin-operando with current-voltage sweeps, transient photocurrent, and transientphotovoltage measurements, and find that degradation in the CH3NH3PbI3-xClxsolar cells due to oxygen exposure occurs over shorter timescales thanFA0.83Cs0.17Pb(I0.8Br0.2)3 mixed-cation devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs0.17Pb(I0.8Br0.2)3
###Degradation Kinetics of Inverted Perovskite Solar Cells|Mejd Alsari,Andrew J. Pearson,Jacob Tse-Wei Wang,Zhiping Wang,Augusto Montisci,Neil C. Greenham,Henry J. Snaith,Samuele Lilliu,Richard H. Friend###
(52522, 52531)
 We continuously test the devices in-situ andin-operando with current-voltage sweeps, transient photocurrent, and transientphotovoltage measurements, and find that degradation in the CH3NH3PbI3-xClxsolar cells due to oxygen exposure occurs over shorter timescales thanFA0.83Cs0.17Pb(I0.8Br0.2)3 mixed-cation devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14388489208633096,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5755395683453238,0,0.0407673860911271,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23980815347721823,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbI
###Homogenization of Halide Distribution and Carrier Dynamics in Alloyed Organic-Inorganic Perovskites|Juan-Pablo Correa-Baena,Yanqi Luo,Thomas M. Brenner,Jordan Snaider,Shijing Sun,Xueying Li,Mallory A. Jensen,Lea Nienhaus,Sarah Wieghold,Jeremy R. Poindexter,Shen Wang,Ying Shirley Meng,Ti Wang,Barry Lai,Moungi G. Bawendi,Libai Huang,David P. Fenning,Tonio Buonassisi###
(52805, 52806)
 By using synchrotron-based nano-X<missing VAR>-rayfluorescence and complementary measurements, we show that when adding RbIand/or CsI the halide distribution becomes homogenous.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 22, '%', 2]

CsI
###Homogenization of Halide Distribution and Carrier Dynamics in Alloyed Organic-Inorganic Perovskites|Juan-Pablo Correa-Baena,Yanqi Luo,Thomas M. Brenner,Jordan Snaider,Shijing Sun,Xueying Li,Mallory A. Jensen,Lea Nienhaus,Sarah Wieghold,Jeremy R. Poindexter,Shen Wang,Ying Shirley Meng,Ti Wang,Barry Lai,Moungi G. Bawendi,Libai Huang,David P. Fenning,Tonio Buonassisi###
(52813, 52814)
 By using synchrotron-based nano-X<missing VAR>-rayfluorescence and complementary measurements, we show that when adding RbIand/or CsI the halide distribution becomes homogenous.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 22, '%', 2]

Rb
###Homogenization of Halide Distribution and Carrier Dynamics in Alloyed Organic-Inorganic Perovskites|Juan-Pablo Correa-Baena,Yanqi Luo,Thomas M. Brenner,Jordan Snaider,Shijing Sun,Xueying Li,Mallory A. Jensen,Lea Nienhaus,Sarah Wieghold,Jeremy R. Poindexter,Shen Wang,Ying Shirley Meng,Ti Wang,Barry Lai,Moungi G. Bawendi,Libai Huang,David P. Fenning,Tonio Buonassisi###
(52887, 52887)
 We find that Rb and K phase-segregate in highlyconcentrated aggregates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 22, '%', 4]

K
###Homogenization of Halide Distribution and Carrier Dynamics in Alloyed Organic-Inorganic Perovskites|Juan-Pablo Correa-Baena,Yanqi Luo,Thomas M. Brenner,Jordan Snaider,Shijing Sun,Xueying Li,Mallory A. Jensen,Lea Nienhaus,Sarah Wieghold,Jeremy R. Poindexter,Shen Wang,Ying Shirley Meng,Ti Wang,Barry Lai,Moungi G. Bawendi,Libai Huang,David P. Fenning,Tonio Buonassisi###
(52891, 52891)
 We find that Rb and K phase-segregate in highlyconcentrated aggregates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 22, '%', 4]

Rb
###Homogenization of Halide Distribution and Carrier Dynamics in Alloyed Organic-Inorganic Perovskites|Juan-Pablo Correa-Baena,Yanqi Luo,Thomas M. Brenner,Jordan Snaider,Shijing Sun,Xueying Li,Mallory A. Jensen,Lea Nienhaus,Sarah Wieghold,Jeremy R. Poindexter,Shen Wang,Ying Shirley Meng,Ti Wang,Barry Lai,Moungi G. Bawendi,Libai Huang,David P. Fenning,Tonio Buonassisi###
(52942, 52942)
 Synchrotron-based X<missing VAR>-ray-beam-induced current andelectron-beam-induced current of solar cells show that Rb clusters do notcontribute to the current and are recombination active.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 22, '%', 5]

AlGaAs
###Optimisation of High Efficiency AlGaAs MQW Solar Cells|J. P. Connolly,K. W. J. Barnham,J. Nelson,P. Griffin,G. Haarpaintner,C. Roberts,M. Pate,J. S. Roberts###
(53081, 53083)
Optimisation of High Efficiency AlGaAs MQW Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Optimisation of High Efficiency AlGaAs MQW Solar Cells|J. P. Connolly,K. W. J. Barnham,J. Nelson,P. Griffin,G. Haarpaintner,C. Roberts,M. Pate,J. S. Roberts###
(53087, 53087)
Optimisation of High Efficiency AlGaAs MQW Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Optimisation of High Efficiency AlGaAs MQW Solar Cells|J. P. Connolly,K. W. J. Barnham,J. Nelson,P. Griffin,G. Haarpaintner,C. Roberts,M. Pate,J. S. Roberts###
(53096, 53101)
 The GaAs/AlGaAs materials system is well suited to multi-bandgap applicationssuch as the multiple quantum well solar cell.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Optimisation of High Efficiency AlGaAs MQW Solar Cells|J. P. Connolly,K. W. J. Barnham,J. Nelson,P. Griffin,G. Haarpaintner,C. Roberts,M. Pate,J. S. Roberts###
(53139, 53140)
 GaAs quantum wells are insertedin the undoped AlGaAs active region of a pin structure to extend the absorptionrange while retaining a higher open circuit voltage than would be provided by acell made of the well material alone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Optimisation of High Efficiency AlGaAs MQW Solar Cells|J. P. Connolly,K. W. J. Barnham,J. Nelson,P. Griffin,G. Haarpaintner,C. Roberts,M. Pate,J. S. Roberts###
(53157, 53159)
 GaAs quantum wells are insertedin the undoped AlGaAs active region of a pin structure to extend the absorptionrange while retaining a higher open circuit voltage than would be provided by acell made of the well material alone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(AlGaAs)
###Optimisation of High Efficiency AlGaAs MQW Solar Cells|J. P. Connolly,K. W. J. Barnham,J. Nelson,P. Griffin,G. Haarpaintner,C. Roberts,M. Pate,J. S. Roberts###
(53235, 53239)
 Unfortunately aluminium gallium arsenide(AlGaAs) suffers from poor transport characteristics due to DX centres andoxygen contamination during growth, which degrade the spectral response.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Optimisation of High Efficiency AlGaAs MQW Solar Cells|J. P. Connolly,K. W. J. Barnham,J. Nelson,P. Griffin,G. Haarpaintner,C. Roberts,M. Pate,J. S. Roberts###
(53308, 53308)
 Weinvestigate three mechanisms for improving the spectral response of the MQWsolar cell while an experimental study of the open circuit voltage examines thevoltage enhancement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Optimisation of High Efficiency AlGaAs MQW Solar Cells|J. P. Connolly,K. W. J. Barnham,J. Nelson,P. Griffin,G. Haarpaintner,C. Roberts,M. Pate,J. S. Roberts###
(53357, 53362)
 An optimised structure for a high efficiency GaAs/AlGaAssolar cell is proposed.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SiI6
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53404, 53406)
First-principles prediction into robust high-performance photovoltaic double perovskites A2SiI6 (A  K, Rb, Cs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 23, '%', 1]

K
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53412, 53412)
First-principles prediction into robust high-performance photovoltaic double perovskites A2SiI6 (A  K, Rb, Cs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 23, '%', 1]

Rb
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53415, 53415)
First-principles prediction into robust high-performance photovoltaic double perovskites A2SiI6 (A  K, Rb, Cs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 23, '%', 1]

Cs
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53418, 53418)
First-principles prediction into robust high-performance photovoltaic double perovskites A2SiI6 (A  K, Rb, Cs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 23, '%', 1]

(Si)
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53533, 53535)
 With the aid offirst-principles calculations, we predict a new promising family of nontoxicinorganic double perovskites (D<missing VAR>Ps), namely, silicon (Si)-based halidesA2SiI6 (A  K, Rb, Cs; X<missing VAR>  Cl, Br, I).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 23, '%', 1]

SiI6
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53544, 53546)
 With the aid offirst-principles calculations, we predict a new promising family of nontoxicinorganic double perovskites (D<missing VAR>Ps), namely, silicon (Si)-based halidesA2SiI6 (A  K, Rb, Cs; X<missing VAR>  Cl, Br, I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 23, '%', 1]

K
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53552, 53552)
 With the aid offirst-principles calculations, we predict a new promising family of nontoxicinorganic double perovskites (D<missing VAR>Ps), namely, silicon (Si)-based halidesA2SiI6 (A  K, Rb, Cs; X<missing VAR>  Cl, Br, I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 23, '%', 1]

Rb
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53555, 53555)
 With the aid offirst-principles calculations, we predict a new promising family of nontoxicinorganic double perovskites (D<missing VAR>Ps), namely, silicon (Si)-based halidesA2SiI6 (A  K, Rb, Cs; X<missing VAR>  Cl, Br, I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 23, '%', 1]

Cs
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53558, 53558)
 With the aid offirst-principles calculations, we predict a new promising family of nontoxicinorganic double perovskites (D<missing VAR>Ps), namely, silicon (Si)-based halidesA2SiI6 (A  K, Rb, Cs; X<missing VAR>  Cl, Br, I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 23, '%', 1]

Cl
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53564, 53564)
 With the aid offirst-principles calculations, we predict a new promising family of nontoxicinorganic double perovskites (D<missing VAR>Ps), namely, silicon (Si)-based halidesA2SiI6 (A  K, Rb, Cs; X<missing VAR>  Cl, Br, I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 23, '%', 1]

Br
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53567, 53567)
 With the aid offirst-principles calculations, we predict a new promising family of nontoxicinorganic double perovskites (D<missing VAR>Ps), namely, silicon (Si)-based halidesA2SiI6 (A  K, Rb, Cs; X<missing VAR>  Cl, Br, I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 23, '%', 1]

I
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53570, 53570)
 With the aid offirst-principles calculations, we predict a new promising family of nontoxicinorganic double perovskites (D<missing VAR>Ps), namely, silicon (Si)-based halidesA2SiI6 (A  K, Rb, Cs; X<missing VAR>  Cl, Br, I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 23, '%', 1]

Si
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53587, 53587)
 This family containing theearth-abundant Si could be applied for perovskite solar cells (PSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 23, '%', 2]

(PSCs)
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53603, 53607)
 This family containing theearth-abundant Si could be applied for perovskite solar cells (PSCs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 23, '%', 2]

SiI6
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53615, 53617)
Particularly A2SiI6 exhibits superb physical traits, includingsuitable band gaps of 0.84-1.15 e<missing VAR>V, dispersive lower conduction bands, smallcarrier effective masses, wide photon absorption in the visible range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 23, '%', 3]

V
###First-principles prediction into robust high-performance photovoltaic double perovskites A$_{2}$SiI$_{6}$ (A = K, Rb, Cs)|Qiaoqiao Li,Liujiang Zhou,Yanfeng Ge,Yulu Ren,Jiangshan Zhao,Wenhui Wan,Kaicheng Zhang,Yong Liu###
(53644, 53644)
Particularly A2SiI6 exhibits superb physical traits, includingsuitable band gaps of 0.84-1.15 e<missing VAR>V, dispersive lower conduction bands, smallcarrier effective masses, wide photon absorption in the visible range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 23, '%', 3]

In
###Ideal Solar Cell Efficiencies|Tom Markvart###
(53734, 53734)
 In a recent paper, Guillemoles et al [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 13, ',', 5]

F
###Ideal Solar Cell Efficiencies|Tom Markvart###
(53752, 53752)
F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 13, ',', 4]

U
###Ideal Solar Cell Efficiencies|Tom Markvart###
(53772, 53772)
Cahen and U Rau, Guide for the perplexed to the Shockley-Queisser model forsolar cells, Nat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 13, ',', 1]

S
###Ideal Solar Cell Efficiencies|Tom Markvart###
(53847, 53847)
 Photonics, 13, 501 (2019)] attempt to clarify and explain theoften cited paper by Shockley and Queisser (SQ) which defines the limits tophotovoltaic conversion by a single-junction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 13, ',', 0]

S
###Ideal Solar Cell Efficiencies|Tom Markvart###
(53881, 53881)
 The SQ<missing VAR> paper is noteasy to read and is therefore easily misunderstood.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 13, ',', 1]

As
###Ideal Solar Cell Efficiencies|Tom Markvart###
(53908, 53908)
 As modern solar cellsapproach theoretical efficiency limits, the fundamentals become particularlyimportant and the effort by Guillemoles et al is therefore to be welcome.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 13, ',', 2]

GaInP/GaInAs/Ge
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54042, 54050)
Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on GeSi virtual substrates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[148.0, 1000, 'nm', 2],[163.0, 8, '%', 2],[186.0, 3, '%', 2],[316.0, 2, 'e', 5]

GeSi
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54066, 54067)
Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on GeSi virtual substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1000, 'nm', 2],[146.0, 8, '%', 2],[169.0, 3, '%', 2],[299.0, 2, 'e', 5]

GaInP/GaInAs/Ge
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54090, 54098)
 Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junctionsolar cells on GeSi virtual substrates has been attempted by thinning thestructure, namely the Ge bottom cell and the GaInAs middle cell.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[100.0, 1000, 'nm', 1],[115.0, 8, '%', 1],[138.0, 3, '%', 1],[268.0, 2, 'e', 4]

GeSi
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54111, 54112)
 Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junctionsolar cells on GeSi virtual substrates has been attempted by thinning thestructure, namely the Ge bottom cell and the GaInAs middle cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1000, 'nm', 1],[101.0, 8, '%', 1],[124.0, 3, '%', 1],[254.0, 2, 'e', 4]

Ge
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54138, 54138)
 Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junctionsolar cells on GeSi virtual substrates has been attempted by thinning thestructure, namely the Ge bottom cell and the GaInAs middle cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1000, 'nm', 1],[75.0, 8, '%', 1],[98.0, 3, '%', 1],[228.0, 2, 'e', 4]

GaInAs
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54148, 54150)
 Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junctionsolar cells on GeSi virtual substrates has been attempted by thinning thestructure, namely the Ge bottom cell and the GaInAs middle cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1000, 'nm', 1],[63.0, 8, '%', 1],[86.0, 3, '%', 1],[216.0, 2, 'e', 4]

GaInAs
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54181, 54183)
 Thetheoretical analysis performed using realistic device parameters indicates thatthe GaInAs middle cell can be drastically thinned to 1000 nm while increasingits In content to 8% with an efficiency loss in the 3-junction cell below 3%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1000, 'nm', 0],[30.0, 8, '%', 0],[53.0, 3, '%', 0],[183.0, 2, 'e', 3]

In
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54207, 54207)
 Thetheoretical analysis performed using realistic device parameters indicates thatthe GaInAs middle cell can be drastically thinned to 1000 nm while increasingits In content to 8% with an efficiency loss in the 3-junction cell below 3%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1000, 'nm', 0],[6.0, 8, '%', 0],[29.0, 3, '%', 0],[159.0, 2, 'e', 3]

GaInAs/Ge
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54270, 54274)
The experimental results show that the formation of macroscopic cracks isprevented in thinned GaInAs/Ge 2-junction and GaInP/GaInAs/Ge 3-junction cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[72.0, 1000, 'nm', 1],[57.0, 8, '%', 1],[34.0, 3, '%', 1],[92.0, 2, 'e', 2]

GaInP/GaInAs/Ge
###Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates|Ivan García,Laura Barrutia,Shabnam Dadgostar,Manuel Hinojosa,Andrew Johnson,Ignacio Rey-Stolle###
(54282, 54290)
The experimental results show that the formation of macroscopic cracks isprevented in thinned GaInAs/Ge 2-junction and GaInP/GaInAs/Ge 3-junction cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[84.0, 1000, 'nm', 1],[69.0, 8, '%', 1],[46.0, 3, '%', 1],[76.0, 2, 'e', 2]

As
###Characterization and Quantum Efficiency Determination of Monocrystalline Silicon Solar Cells as Sensors for Precise Flux Calibration|Sasha Brownsberger,Lige Zhang,David Andrade,Christopher Stubbs###
(54479, 54479)
 As the precision frontier of astrophysics advances towards the onemillimagnitude level, flux calibration of photometric instrumentation remainsan ongoing challenge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 125, 'mm', 1]

C60
###Characterization and Quantum Efficiency Determination of Monocrystalline Silicon Solar Cells as Sensors for Precise Flux Calibration|Sasha Brownsberger,Lige Zhang,David Andrade,Christopher Stubbs###
(54631, 54632)
 We measure the electricalproperties, spatial response uniformity, quantum efficiency (QE), and frequencyresponse of 3rd generation C60 solar cells, manufactured by Sunpower.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 125, 'mm', 1]

III
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(54894, 54896)
 For instance, triple-junction III-V multijunction solar cellscommonly use GaAs as a middle cell because of its near-perfect materialquality, despite its bandgap being higher than optimal for the global spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 39.5, '%', 2],[80.0, 34.2, '%', 2],[227.0, 39.5, '%', 3],[233.0, 34.2, '%', 3]

V
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(54898, 54898)
 For instance, triple-junction III-V multijunction solar cellscommonly use GaAs as a middle cell because of its near-perfect materialquality, despite its bandgap being higher than optimal for the global spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 39.5, '%', 2],[84.0, 34.2, '%', 2],[225.0, 39.5, '%', 3],[231.0, 34.2, '%', 3]

GaAs
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(54911, 54912)
 For instance, triple-junction III-V multijunction solar cellscommonly use GaAs as a middle cell because of its near-perfect materialquality, despite its bandgap being higher than optimal for the global spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 39.5, '%', 2],[97.0, 34.2, '%', 2],[211.0, 39.5, '%', 3],[217.0, 34.2, '%', 3]

GaAs
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(54971, 54972)
Here, we modify the GaAs bandgap using thick GaInAs/GaAsP strain-balancedquantum well (Q<missing VAR>W) solar cells with excellent voltage and absorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 39.5, '%', 3],[157.0, 34.2, '%', 3],[151.0, 39.5, '%', 2],[157.0, 34.2, '%', 2]

GaInAs/GaAsP
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(54980, 54986)
Here, we modify the GaAs bandgap using thick GaInAs/GaAsP strain-balancedquantum well (Q<missing VAR>W) solar cells with excellent voltage and absorption.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[173.0, 39.5, '%', 3],[166.0, 34.2, '%', 3],[137.0, 39.5, '%', 2],[143.0, 34.2, '%', 2]

W
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(54999, 54999)
Here, we modify the GaAs bandgap using thick GaInAs/GaAsP strain-balancedquantum well (Q<missing VAR>W) solar cells with excellent voltage and absorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 39.5, '%', 3],[185.0, 34.2, '%', 3],[124.0, 39.5, '%', 2],[130.0, 34.2, '%', 2]

GaInP
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(55054, 55056)
 Thesehigh-performance Q<missing VAR>Ws are incorporated into a triple-junction invertedmetamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsPQ<missing VAR>W middle cell, and lattice-mismatched GaInAs bottom cell, each of which hasbeen highly optimized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 39.5, '%', 4],[240.0, 34.2, '%', 4],[67.0, 39.5, '%', 1],[73.0, 34.2, '%', 1]

GaInAs/GaAsP
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(55063, 55069)
 Thesehigh-performance Q<missing VAR>Ws are incorporated into a triple-junction invertedmetamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsPQ<missing VAR>W middle cell, and lattice-mismatched GaInAs bottom cell, each of which hasbeen highly optimized.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[256.0, 39.5, '%', 4],[249.0, 34.2, '%', 4],[54.0, 39.5, '%', 1],[60.0, 34.2, '%', 1]

W
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(55073, 55073)
 Thesehigh-performance Q<missing VAR>Ws are incorporated into a triple-junction invertedmetamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsPQ<missing VAR>W middle cell, and lattice-mismatched GaInAs bottom cell, each of which hasbeen highly optimized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 39.5, '%', 4],[259.0, 34.2, '%', 4],[50.0, 39.5, '%', 1],[56.0, 34.2, '%', 1]

GaInAs
###Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices|Ryan M. France,John F. Geisz,Tao Song,Waldo Olavarria,Michelle Young,Alan Kibbler,Myles A. Steiner###
(55086, 55088)
 Thesehigh-performance Q<missing VAR>Ws are incorporated into a triple-junction invertedmetamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsPQ<missing VAR>W middle cell, and lattice-mismatched GaInAs bottom cell, each of which hasbeen highly optimized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 39.5, '%', 4],[272.0, 34.2, '%', 4],[35.0, 39.5, '%', 1],[41.0, 34.2, '%', 1]

Hg
###On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical Review)|A. Barhdadi###
(55184, 55184)
On the potential of Hg-Photo-CVD<missing VAR> process for the low temperature growth of nano-crystalline silicon (Topical Review).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CV
###On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical Review)|A. Barhdadi###
(55188, 55189)
On the potential of Hg-Photo-CVD<missing VAR> process for the low temperature growth of nano-crystalline silicon (Topical Review).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg
###On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical Review)|A. Barhdadi###
(55234, 55234)
 Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD)technique opens new possibilities for reducing thin film growth temperature andproducing novel semiconductor materials suitable for the future generation ofhigh efficiency thin film solar cells onto low cost flexible plasticsubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CV
###On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical Review)|A. Barhdadi###
(55238, 55239)
 Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD)technique opens new possibilities for reducing thin film growth temperature andproducing novel semiconductor materials suitable for the future generation ofhigh efficiency thin film solar cells onto low cost flexible plasticsubstrates.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiH
###Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD|A. Barhdadi,S. Karbal,N. Mgafad,A. Benmakhlouf,M. Chafik El Idrissi,B. M. Aka###
(55449, 55450)
Optical characterization of a-SiH thin films grown by Hg-Photo-CVD<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg
###Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD|A. Barhdadi,S. Karbal,N. Mgafad,A. Benmakhlouf,M. Chafik El Idrissi,B. M. Aka###
(55460, 55460)
Optical characterization of a-SiH thin films grown by Hg-Photo-CVD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CV
###Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD|A. Barhdadi,S. Karbal,N. Mgafad,A. Benmakhlouf,M. Chafik El Idrissi,B. M. Aka###
(55464, 55465)
Optical characterization of a-SiH thin films grown by Hg-Photo-CVD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg
###Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD|A. Barhdadi,S. Karbal,N. Mgafad,A. Benmakhlouf,M. Chafik El Idrissi,B. M. Aka###
(55484, 55484)
 Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD)technique opens new possibilities for reducing thin film growth temperature andproducing novel semiconductor materials suitable for the future generation ofhigh efficiency thin film solar cells onto low cost flexible plasticsubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CV
###Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD|A. Barhdadi,S. Karbal,N. Mgafad,A. Benmakhlouf,M. Chafik El Idrissi,B. M. Aka###
(55488, 55489)
 Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD)technique opens new possibilities for reducing thin film growth temperature andproducing novel semiconductor materials suitable for the future generation ofhigh efficiency thin film solar cells onto low cost flexible plasticsubstrates.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD|A. Barhdadi,S. Karbal,N. Mgafad,A. Benmakhlouf,M. Chafik El Idrissi,B. M. Aka###
(55681, 55681)
  Keywords Photovoltaic, Solar Cell, Thin films, Nano-Crystalline Silicon,Hydrogenated Amorphous Silicon, Optical Properties, Thermal Annealing PACSNumbers 68.60.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CS
###Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD|A. Barhdadi,S. Karbal,N. Mgafad,A. Benmakhlouf,M. Chafik El Idrissi,B. M. Aka###
(55683, 55684)
  Keywords Photovoltaic, Solar Cell, Thin films, Nano-Crystalline Silicon,Hydrogenated Amorphous Silicon, Optical Properties, Thermal Annealing PACSNumbers 68.60.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O1
###Hydrogen-bonded supramolecular assembly of dyes at nanostructured solar cell interfaces|Christopher E. Patrick,Feliciano Giustino###
(55763, 55764)
 We calculate from first principles the O1s<missing VAR> core-level shifts for a variety ofatomistic models of the interface between TiO2 and the dye N3 found indye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Hydrogen-bonded supramolecular assembly of dyes at nanostructured solar cell interfaces|Christopher E. Patrick,Feliciano Giustino###
(55794, 55796)
 We calculate from first principles the O1s<missing VAR> core-level shifts for a variety ofatomistic models of the interface between TiO2 and the dye N3 found indye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N3
###Hydrogen-bonded supramolecular assembly of dyes at nanostructured solar cell interfaces|Christopher E. Patrick,Feliciano Giustino###
(55804, 55805)
 We calculate from first principles the O1s<missing VAR> core-level shifts for a variety ofatomistic models of the interface between TiO2 and the dye N3 found indye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2/N3
###Hydrogen-bonded supramolecular assembly of dyes at nanostructured solar cell interfaces|Christopher E. Patrick,Feliciano Giustino###
(55893, 55898)
 Based on ouranalysis we propose that at the TiO2/N3 interface the dyes are arranged insupramolecular assemblies.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si
###Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability|Feijiu Wang,Daichi Kozawa,Yuhei Miyauchi,Kazushi Hiraoka,Shinichiro Mouri,Yutaka Ohno,Kazunari Matsuda###
(56243, 56243)
Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 12, '%', 2]

Si
###Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability|Feijiu Wang,Daichi Kozawa,Yuhei Miyauchi,Kazushi Hiraoka,Shinichiro Mouri,Yutaka Ohno,Kazunari Matsuda###
(56278, 56278)
 The photovoltaic properties of carbon nanotube/Si heterojunction solar cellswere investigated using network films of high quality single-walled carbonnanotubes (SWNTs) grown by atmospheric-pressure floating-catalyst chemicalvapor deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 12, '%', 1]

SWN
###Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability|Feijiu Wang,Daichi Kozawa,Yuhei Miyauchi,Kazushi Hiraoka,Shinichiro Mouri,Yutaka Ohno,Kazunari Matsuda###
(56313, 56315)
 The photovoltaic properties of carbon nanotube/Si heterojunction solar cellswere investigated using network films of high quality single-walled carbonnanotubes (SWNTs) grown by atmospheric-pressure floating-catalyst chemicalvapor deposition.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 12, '%', 1]

SWN
###Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability|Feijiu Wang,Daichi Kozawa,Yuhei Miyauchi,Kazushi Hiraoka,Shinichiro Mouri,Yutaka Ohno,Kazunari Matsuda###
(56366, 56368)
 Because of the optimization of the device window size and theutilization of SWNT<missing VAR> thin films with both low resistivity and high transparency,a high photovoltaic conversion efficiency of greater than 12% was achieved forSWNTs/Si heterojunction solar cells without any post processing, such ascarrier doping treatment.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 12, '%', 0]

SWN
###Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability|Feijiu Wang,Daichi Kozawa,Yuhei Miyauchi,Kazushi Hiraoka,Shinichiro Mouri,Yutaka Ohno,Kazunari Matsuda###
(56417, 56419)
 Because of the optimization of the device window size and theutilization of SWNT<missing VAR> thin films with both low resistivity and high transparency,a high photovoltaic conversion efficiency of greater than 12% was achieved forSWNTs/Si heterojunction solar cells without any post processing, such ascarrier doping treatment.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 12, '%', 0]

Si
###Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability|Feijiu Wang,Daichi Kozawa,Yuhei Miyauchi,Kazushi Hiraoka,Shinichiro Mouri,Yutaka Ohno,Kazunari Matsuda###
(56422, 56422)
 Because of the optimization of the device window size and theutilization of SWNT<missing VAR> thin films with both low resistivity and high transparency,a high photovoltaic conversion efficiency of greater than 12% was achieved forSWNTs/Si heterojunction solar cells without any post processing, such ascarrier doping treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 12, '%', 0]

In
###Fabrication of single-walled carbon nanotube/Si heterojunction solar cell with high photovoltaic conversion efficiency and stability|Feijiu Wang,Daichi Kozawa,Yuhei Miyauchi,Kazushi Hiraoka,Shinichiro Mouri,Yutaka Ohno,Kazunari Matsuda###
(56451, 56451)
 In addition, the high stability and reproducibilityof the photovoltaic performance of these devices in air was demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 12, '%', 1]

B
###Lithography-free sub-100nm nanocone array antireflection layer for low-cost silicon solar cell|Zhida Xu,Logan Liu###
(56624, 56624)
 We suppressed the broadband opticalreflection on chemically textured grade-B silicon solar cells for up to 70.25%through this nanomanufacturing method.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 70.25, '%', 0],[58.0, 7.1, '%', 1],[71.0, 7.0, '%', 1],[83.0, 14.66, '%', 1]

InAs/GaAs
###Effects of n-type doping in InAs/GaAs quantum dot layer on current-voltage characteristic of intermediate band solar cells|Yong-Xian Gu,Xiao-Guang Yang,Hai-Ming Ji,Peng-Fei Xu,Tao Yang###
(57022, 57026)
Effects of n<missing VAR>-type doping in InAs/GaAs quantum dot layer on current-voltage characteristic of intermediate band solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

InAs/GaAs
###Effects of n-type doping in InAs/GaAs quantum dot layer on current-voltage characteristic of intermediate band solar cells|Yong-Xian Gu,Xiao-Guang Yang,Hai-Ming Ji,Peng-Fei Xu,Tao Yang###
(57067, 57071)
 We investigated the current-voltage characteristic of InAs/GaAs quantum dotintermediate band solar cells (QD IBSCs) with different n<missing VAR>-type doping densityin the QD layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cs
###Effects of n-type doping in InAs/GaAs quantum dot layer on current-voltage characteristic of intermediate band solar cells|Yong-Xian Gu,Xiao-Guang Yang,Hai-Ming Ji,Peng-Fei Xu,Tao Yang###
(57093, 57093)
 We investigated the current-voltage characteristic of InAs/GaAs quantum dotintermediate band solar cells (QD IBSCs) with different n<missing VAR>-type doping densityin the QD layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Effects of n-type doping in InAs/GaAs quantum dot layer on current-voltage characteristic of intermediate band solar cells|Yong-Xian Gu,Xiao-Guang Yang,Hai-Ming Ji,Peng-Fei Xu,Tao Yang###
(57216, 57216)
 The n<missing VAR>-type doping evidently increases the open circuitvoltage, meanwhile decreases the short circuit current density, and leads tothe conversion efficiency approaching that of the control solar cell, that isthe major role of n<missing VAR>-type doping is to suppress the effects of Q<missing VAR>Ds on thecurrent-voltage characteristic.
EXCEPTION 3: IndexError for Ds
Abstract does not contain any numbers.

Cs
###Utilization of Naturally Occurring Dyes as Sensitizers in Dye Sensitized Solar Cells|Nipun Sawhney,Soumitra Satapathi###
(57540, 57540)
 Dye sensitized Solar cells (D<missing VAR>SSCs) were fabricated with four naturallyoccurring anthocyanin dyes extracted from naturally found fruits/ juices (viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.55, '%', 3],[100.0, 0.53, '%', 3]

SSCs
###Utilization of Naturally Occurring Dyes as Sensitizers in Dye Sensitized Solar Cells|Nipun Sawhney,Soumitra Satapathi###
(57652, 57654)
 The highest power conversionefficiencies (eta) of 0.55% and 0.53% were achieved for the D<missing VAR>SSCs fabricatedusing anthocyanin extracts of blackcurrant and mixed berry juice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.55, '%', 0],[12.0, 0.53, '%', 0]

InGaN
###Effect of the quantum well thickness on the performance of InGaN photovoltaic cells|L. Redaelli,A. Mukhtarova,S. Valdueza-Felip,A. Ajay,C. Bougerol,C. Himwas,J. Faure-Vincent,C. Durand,J. Eymery,E. Monroy###
(57779, 57781)
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 395, 'to', 2],[85.0, 474, 'nm', 2],[99.0, 1.3, 'to', 2],[100.0, 5.4, 'nm', 2]

In0.12Ga0.88N/GaN
###Effect of the quantum well thickness on the performance of InGaN photovoltaic cells|L. Redaelli,A. Mukhtarova,S. Valdueza-Felip,A. Ajay,C. Bougerol,C. Himwas,J. Faure-Vincent,C. Durand,J. Eymery,E. Monroy###
(57827, 57834)
 We report on the influence of the quantum well thickness on the effectiveband gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum wellsolar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[31.0, 395, 'to', 1],[32.0, 474, 'nm', 1],[46.0, 1.3, 'to', 1],[47.0, 5.4, 'nm', 1]

S
###Thermodynamic Limits of Solar Cells with Non-ideal Optical Response|M. Ryyan Khan,Peter Bermel,Muhammad A. Alam###
(58026, 58026)
 The Shockley-Queisser (S-Q) theory defines the thermodynamic upper limits forJsc, Voc, FF, and efficiency of a solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Thermodynamic Limits of Solar Cells with Non-ideal Optical Response|M. Ryyan Khan,Peter Bermel,Muhammad A. Alam###
(58052, 58053)
 The Shockley-Queisser (S-Q) theory defines the thermodynamic upper limits forJsc, Voc, FF, and efficiency of a solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermodynamic Limits of Solar Cells with Non-ideal Optical Response|M. Ryyan Khan,Peter Bermel,Muhammad A. Alam###
(58150, 58150)
 In this paper, weexplain how the S-Q<missing VAR> limits are redefined in the presence of the non-idealoptical effects, and we provide closed-form analytical expressions for the newlimits for Jsc, Voc, and FF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermodynamic Limits of Solar Cells with Non-ideal Optical Response|M. Ryyan Khan,Peter Bermel,Muhammad A. Alam###
(58166, 58166)
 In this paper, weexplain how the S-Q<missing VAR> limits are redefined in the presence of the non-idealoptical effects, and we provide closed-form analytical expressions for the newlimits for Jsc, Voc, and FF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Thermodynamic Limits of Solar Cells with Non-ideal Optical Response|M. Ryyan Khan,Peter Bermel,Muhammad A. Alam###
(58229, 58230)
 In this paper, weexplain how the S-Q<missing VAR> limits are redefined in the presence of the non-idealoptical effects, and we provide closed-form analytical expressions for the newlimits for Jsc, Voc, and FF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film|Yuka Tsuboi,Feijiu Wang,Daichi Kozawa,Kazuma Funahashi,Shinichiro Mouri,Yuhei Miyauchi,Taishi Takenobu,Kazunari Matsuda###
(58289, 58289)
Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 11.1, '%', 5]

MoS2
###Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film|Yuka Tsuboi,Feijiu Wang,Daichi Kozawa,Kazuma Funahashi,Shinichiro Mouri,Yuhei Miyauchi,Taishi Takenobu,Kazunari Matsuda###
(58303, 58305)
Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 11.1, '%', 5]

Si
###Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film|Yuka Tsuboi,Feijiu Wang,Daichi Kozawa,Kazuma Funahashi,Shinichiro Mouri,Yuhei Miyauchi,Taishi Takenobu,Kazunari Matsuda###
(58400, 58400)
 Here, we demonstrated that the photovoltaicperformances of graphene/Si Schottky junction solar cells were significantlyimproved by inserting a chemical vapor deposition (CVD)-grown, large MoS2thin-film layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 11.1, '%', 3]

CV
###Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film|Yuka Tsuboi,Feijiu Wang,Daichi Kozawa,Kazuma Funahashi,Shinichiro Mouri,Yuhei Miyauchi,Taishi Takenobu,Kazunari Matsuda###
(58430, 58431)
 Here, we demonstrated that the photovoltaicperformances of graphene/Si Schottky junction solar cells were significantlyimproved by inserting a chemical vapor deposition (CVD)-grown, large MoS2thin-film layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 11.1, '%', 3]

MoS2
###Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film|Yuka Tsuboi,Feijiu Wang,Daichi Kozawa,Kazuma Funahashi,Shinichiro Mouri,Yuhei Miyauchi,Taishi Takenobu,Kazunari Matsuda###
(58440, 58442)
 Here, we demonstrated that the photovoltaicperformances of graphene/Si Schottky junction solar cells were significantlyimproved by inserting a chemical vapor deposition (CVD)-grown, large MoS2thin-film layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 11.1, '%', 3]

MoS2
###Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film|Yuka Tsuboi,Feijiu Wang,Daichi Kozawa,Kazuma Funahashi,Shinichiro Mouri,Yuhei Miyauchi,Taishi Takenobu,Kazunari Matsuda###
(58522, 58524)
 We also demonstrated that thephotovoltaic properties are enhanced with increasing number of graphene layersand decreasing thickness of the MoS2 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 11.1, '%', 1]

MoS2
###Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film|Yuka Tsuboi,Feijiu Wang,Daichi Kozawa,Kazuma Funahashi,Shinichiro Mouri,Yuhei Miyauchi,Taishi Takenobu,Kazunari Matsuda###
(58559, 58561)
 A high photovoltaic conversionefficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n<missing VAR>-Sisolar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 11.1, '%', 0]

Si
###Enhanced Photovoltaic Performances of Graphene/Si Solar Cells by Insertion of an MoS2 Thin Film|Yuka Tsuboi,Feijiu Wang,Daichi Kozawa,Kazuma Funahashi,Shinichiro Mouri,Yuhei Miyauchi,Taishi Takenobu,Kazunari Matsuda###
(58565, 58565)
 A high photovoltaic conversionefficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n<missing VAR>-Sisolar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 11.1, '%', 0]

TiO2
###Use of Anodic TiO2 Nanotube Layers as Mesoporous Scaffolds for Fabricating CH3NH3PbI3 Perovskite-based Solid State Solar Cells|Raul Salazar,Marco Altomare,Kiyoung Lee,Jyotsna Tripathy,Robin Kirchgeorg,Nhat Truong Nguyen,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(58587, 58589)
Use of Anodic TiO2 Nanotube Layers as Mesoporous Scaffolds for Fabricating CH3NH3PbI3 Perovskite-based Solid State Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Use of Anodic TiO2 Nanotube Layers as Mesoporous Scaffolds for Fabricating CH3NH3PbI3 Perovskite-based Solid State Solar Cells|Raul Salazar,Marco Altomare,Kiyoung Lee,Jyotsna Tripathy,Robin Kirchgeorg,Nhat Truong Nguyen,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(58605, 58613)
Use of Anodic TiO2 Nanotube Layers as Mesoporous Scaffolds for Fabricating CH3NH3PbI3 Perovskite-based Solid State Solar Cells.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Use of Anodic TiO2 Nanotube Layers as Mesoporous Scaffolds for Fabricating CH3NH3PbI3 Perovskite-based Solid State Solar Cells|Raul Salazar,Marco Altomare,Kiyoung Lee,Jyotsna Tripathy,Robin Kirchgeorg,Nhat Truong Nguyen,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(58638, 58646)
 We optimize the deposition of CH3NH3PbI3 perovskite into mesoporouselectrodes consisting of anodic TiO2 nanotube layers.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Use of Anodic TiO2 Nanotube Layers as Mesoporous Scaffolds for Fabricating CH3NH3PbI3 Perovskite-based Solid State Solar Cells|Raul Salazar,Marco Altomare,Kiyoung Lee,Jyotsna Tripathy,Robin Kirchgeorg,Nhat Truong Nguyen,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(58663, 58665)
 We optimize the deposition of CH3NH3PbI3 perovskite into mesoporouselectrodes consisting of anodic TiO2 nanotube layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Use of Anodic TiO2 Nanotube Layers as Mesoporous Scaffolds for Fabricating CH3NH3PbI3 Perovskite-based Solid State Solar Cells|Raul Salazar,Marco Altomare,Kiyoung Lee,Jyotsna Tripathy,Robin Kirchgeorg,Nhat Truong Nguyen,Mohamed Mokhtar,Abdelmohsen Alshehri,Shaeel A. Al-Thabaiti,Patrik Schmuki###
(58726, 58728)
 By a simple spin coatingapproach, complete filling of the tube scaffolds is obtained, that leads tointerdigitated perovskite structures in conformal contact with the TiO2 tubecounterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSCs
###Conical-Shaped Titania Nanotubes for Optimized Light Management in DSSCs Reach Back-side Illumination Efficiencies > 8%|Seulgi So,Arian Kriesch,Ulf Peschel,Patrik Schmuki###
(58896, 58898)
Conical-Shaped Titania Nanotubes for Optimized Light Management in D<missing VAR>SSCs Reach Back-side Illumination Efficiencies > 8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 8, '%', 0]

In
###Conical-Shaped Titania Nanotubes for Optimized Light Management in DSSCs Reach Back-side Illumination Efficiencies > 8%|Seulgi So,Arian Kriesch,Ulf Peschel,Patrik Schmuki###
(58916, 58916)
 In the present work, we introduce the anodic growth of conical shaped TiO2nanotube arrays.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 8, '%', 1]

TiO2
###Conical-Shaped Titania Nanotubes for Optimized Light Management in DSSCs Reach Back-side Illumination Efficiencies > 8%|Seulgi So,Arian Kriesch,Ulf Peschel,Patrik Schmuki###
(58941, 58943)
 In the present work, we introduce the anodic growth of conical shaped TiO2nanotube arrays.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 8, '%', 1]

C
###Conical-Shaped Titania Nanotubes for Optimized Light Management in DSSCs Reach Back-side Illumination Efficiencies > 8%|Seulgi So,Arian Kriesch,Ulf Peschel,Patrik Schmuki###
(58978, 58978)
 These titania nanocones provide a scaffold for dye-sensitizedsolar cell (D<missing VAR>SSC) structures with significantly improved photon management,providing an optimized absorption profile compared with conventionalcylindrical nanotube arrays.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 8, '%', 2]

F
###Conical-Shaped Titania Nanotubes for Optimized Light Management in DSSCs Reach Back-side Illumination Efficiencies > 8%|Seulgi So,Arian Kriesch,Ulf Peschel,Patrik Schmuki###
(59028, 59028)
 Finite difference time domain (FDTD) modellingdemonstrates a drastically changed power-absorption characteristic over thetube length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 8, '%', 3]

SSC
###Conical-Shaped Titania Nanotubes for Optimized Light Management in DSSCs Reach Back-side Illumination Efficiencies > 8%|Seulgi So,Arian Kriesch,Ulf Peschel,Patrik Schmuki###
(59076, 59078)
 When used in a back-side illumination D<missing VAR>SSC configuration, nanoconestructures can reach over 60 % higher solar cell conversion efficiency thanconventional tubes.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 8, '%', 4]

SSCs
###Conical-Shaped Titania Nanotubes for Optimized Light Management in DSSCs Reach Back-side Illumination Efficiencies > 8%|Seulgi So,Arian Kriesch,Ulf Peschel,Patrik Schmuki###
(59153, 59155)
 8 % represents one of thehighest reported values for Graetzel type D<missing VAR>SSCs used under back-sideillumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 8, '%', 6]

GaInP/GaAs
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59179, 59184)
Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

HB
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59235, 59236)
 Here we present the experimental results of an inverted three-terminalheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) made of GaInP/GaAs.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59239, 59239)
 Here we present the experimental results of an inverted three-terminalheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) made of GaInP/GaAs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaInP/GaAs
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59246, 59251)
 Here we present the experimental results of an inverted three-terminalheterojunction bipolar transistor solar cell (HBT<missing VAR>SC) made of GaInP/GaAs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

HB
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59395, 59396)
 With this prototype we show that aninverted processing of a three-terminal solar cell is feasible and pave the wayfor the application of epitaxial lift-off, substrate reuse and mechanicalstacking to the HBT<missing VAR>SC which can eventually lead to a low-cost high-efficiencyIII-V-on-Si HBT<missing VAR>SC technology.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59398, 59399)
 With this prototype we show that aninverted processing of a three-terminal solar cell is feasible and pave the wayfor the application of epitaxial lift-off, substrate reuse and mechanicalstacking to the HBT<missing VAR>SC which can eventually lead to a low-cost high-efficiencyIII-V-on-Si HBT<missing VAR>SC technology.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59422, 59424)
 With this prototype we show that aninverted processing of a three-terminal solar cell is feasible and pave the wayfor the application of epitaxial lift-off, substrate reuse and mechanicalstacking to the HBT<missing VAR>SC which can eventually lead to a low-cost high-efficiencyIII-V-on-Si HBT<missing VAR>SC technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59426, 59426)
 With this prototype we show that aninverted processing of a three-terminal solar cell is feasible and pave the wayfor the application of epitaxial lift-off, substrate reuse and mechanicalstacking to the HBT<missing VAR>SC which can eventually lead to a low-cost high-efficiencyIII-V-on-Si HBT<missing VAR>SC technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59430, 59430)
 With this prototype we show that aninverted processing of a three-terminal solar cell is feasible and pave the wayfor the application of epitaxial lift-off, substrate reuse and mechanicalstacking to the HBT<missing VAR>SC which can eventually lead to a low-cost high-efficiencyIII-V-on-Si HBT<missing VAR>SC technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HB
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59432, 59433)
 With this prototype we show that aninverted processing of a three-terminal solar cell is feasible and pave the wayfor the application of epitaxial lift-off, substrate reuse and mechanicalstacking to the HBT<missing VAR>SC which can eventually lead to a low-cost high-efficiencyIII-V-on-Si HBT<missing VAR>SC technology.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell|Marius H. Zehender,Simon. A. Svatek,Myles A. Steiner,Iván García,Pablo García Linares,Emily L. Warren,Antonio Martí,Adele. C. Tamboli,Elisa Antolín###
(59435, 59436)
 With this prototype we show that aninverted processing of a three-terminal solar cell is feasible and pave the wayfor the application of epitaxial lift-off, substrate reuse and mechanicalstacking to the HBT<missing VAR>SC which can eventually lead to a low-cost high-efficiencyIII-V-on-Si HBT<missing VAR>SC technology.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(InGaN)
###Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells|Tom H. Anderson,Akhlesh Lakhtakia,Peter B. Monk###
(59505, 59509)
 A two-dimensional model was developed to simulate the optoelectroniccharacteristics of indium-gallium-nitride (InGaN), thin-film, Schottky-barriersolar cells.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaN
###Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells|Tom H. Anderson,Akhlesh Lakhtakia,Peter B. Monk###
(59578, 59580)
 The solar cells comprise a window, designed to reduce thereflection of incident light, Schottky-barrier and ohmic front electrodes, ann<missing VAR>-doped InGaN wafer, and a metallic periodically corrugated back-reflector(PCBR).
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCB
###Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells|Tom H. Anderson,Akhlesh Lakhtakia,Peter B. Monk###
(59601, 59603)
 The solar cells comprise a window, designed to reduce thereflection of incident light, Schottky-barrier and ohmic front electrodes, ann<missing VAR>-doped InGaN wafer, and a metallic periodically corrugated back-reflector(PCBR).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaN
###Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells|Tom H. Anderson,Akhlesh Lakhtakia,Peter B. Monk###
(59662, 59664)
 Thus, theresulting InGaN wafers<missing VAR> optical and electrical properties are made to varyperiodically.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaN
###Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells|Tom H. Anderson,Akhlesh Lakhtakia,Peter B. Monk###
(59796, 59798)
 The nonhomogeneity of the electrical properties of the InGaN aids inthe separation of the excited electron-hole pairs, while the periodicities ofoptical properties and the back-reflector enable the incident light to coupleto multiple guided wave modes.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells|Tom H. Anderson,Akhlesh Lakhtakia,Peter B. Monk###
(59946, 59947)
 Thesteady-state drift-diffusion equations were solved using COM<missing VAR>SOL<missing VAR>, which employsfinite-volume methods, to calculate the current density as a function of thevoltage.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Optimization of nonhomogeneous indium-gallium-nitride Schottky-barrier thin-film solar cells|Tom H. Anderson,Akhlesh Lakhtakia,Peter B. Monk###
(59949, 59950)
 Thesteady-state drift-diffusion equations were solved using COM<missing VAR>SOL<missing VAR>, which employsfinite-volume methods, to calculate the current density as a function of thevoltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbPbI3
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60129, 60132)
First-principles studies of oxygen interstitial dopants in RbPbI3 halide for perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 1.0, 'eV', 6]

RbPb
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60279, 60280)
 RbPbX<missing VAR>3-type perovskites have fantasticchemical stability and good power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1.0, 'eV', 2]

(O1)
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60338, 60341)
 Here for the firsttime, we have studied the effect of interstitial oxygen atom (O1) and molecule(O2) on the structural properties, and hence the electronic structure of RbPbI3from first principles.
Featurization successful!
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1.0, 'eV', 1]

(O2)
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60348, 60351)
 Here for the firsttime, we have studied the effect of interstitial oxygen atom (O1) and molecule(O2) on the structural properties, and hence the electronic structure of RbPbI3from first principles.
Featurization successful!
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1.0, 'eV', 1]

RbPbI3
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60374, 60377)
 Here for the firsttime, we have studied the effect of interstitial oxygen atom (O1) and molecule(O2) on the structural properties, and hence the electronic structure of RbPbI3from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1.0, 'eV', 1]

V
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60406, 60406)
 A significant reduction of the band gap from 2.6 e<missing VAR>V to 1.0 eV, which is close to the optimal band gap, has been predicted whenincorporating oxygen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1.0, 'eV', 0]

In
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60492, 60492)
 In addition, an exotic metallic state has been found in ourcalculations for interstitial oxygen molecule when there are strong O-O, O-Pb,and O-I bonds, indicating the complex nature of oxygen-doped perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.0, 'eV', 2]

O
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60534, 60534)
 In addition, an exotic metallic state has been found in ourcalculations for interstitial oxygen molecule when there are strong O-O, O-Pb,and O-I bonds, indicating the complex nature of oxygen-doped perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1.0, 'eV', 2]

O
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60536, 60536)
 In addition, an exotic metallic state has been found in ourcalculations for interstitial oxygen molecule when there are strong O-O, O-Pb,and O-I bonds, indicating the complex nature of oxygen-doped perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 1.0, 'eV', 2]

O
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60539, 60539)
 In addition, an exotic metallic state has been found in ourcalculations for interstitial oxygen molecule when there are strong O-O, O-Pb,and O-I bonds, indicating the complex nature of oxygen-doped perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.0, 'eV', 2]

Pb
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60541, 60541)
 In addition, an exotic metallic state has been found in ourcalculations for interstitial oxygen molecule when there are strong O-O, O-Pb,and O-I bonds, indicating the complex nature of oxygen-doped perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1.0, 'eV', 2]

O
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60547, 60547)
 In addition, an exotic metallic state has been found in ourcalculations for interstitial oxygen molecule when there are strong O-O, O-Pb,and O-I bonds, indicating the complex nature of oxygen-doped perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1.0, 'eV', 2]

I
###First-principles studies of oxygen interstitial dopants in RbPbI$_3$ halide for perovskite solar cells|Chongyao Yang,Wei Wu,Kwang-Leong Choy###
(60549, 60549)
 In addition, an exotic metallic state has been found in ourcalculations for interstitial oxygen molecule when there are strong O-O, O-Pb,and O-I bonds, indicating the complex nature of oxygen-doped perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1.0, 'eV', 2]

B5
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(60788, 60789)
 We analysed self-consistently photoconversion efficiency of direct-gap A3B5semicon-ductors based solar cells and optimised their main physicalcharacteristics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 27, '%', 3],[359.0, 30, '%', 5]

(GaAs)
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(60824, 60827)
 Using gallium ar-senide (GaAs) as the example and newefficient optimization formalism, we demonstrated that commonly accepted lightre-emission and re-absorption in solar cells (SC) in technologically producedGaAs (in particular, with solid- or liquid-phase epitaxy) are not the mainfactors re-sponsible for high photoconversion efficiency.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 27, '%', 2],[321.0, 30, '%', 4]

(SC)
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(60876, 60879)
 Using gallium ar-senide (GaAs) as the example and newefficient optimization formalism, we demonstrated that commonly accepted lightre-emission and re-absorption in solar cells (SC) in technologically producedGaAs (in particular, with solid- or liquid-phase epitaxy) are not the mainfactors re-sponsible for high photoconversion efficiency.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 27, '%', 2],[269.0, 30, '%', 4]

GaAs
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(60888, 60889)
 Using gallium ar-senide (GaAs) as the example and newefficient optimization formalism, we demonstrated that commonly accepted lightre-emission and re-absorption in solar cells (SC) in technologically producedGaAs (in particular, with solid- or liquid-phase epitaxy) are not the mainfactors re-sponsible for high photoconversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 27, '%', 2],[259.0, 30, '%', 4]

As
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(60935, 60935)
 As we proved instead,the doping level of the base material and its doping type as well asShockley-Read-Hall (SR<missing VAR>H) and surface recombination velocities are much moreimportant factors responsible for the photoconversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 27, '%', 1],[213.0, 30, '%', 3]

S
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(60981, 60981)
 As we proved instead,the doping level of the base material and its doping type as well asShockley-Read-Hall (SR<missing VAR>H) and surface recombination velocities are much moreimportant factors responsible for the photoconversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 27, '%', 1],[167.0, 30, '%', 3]

H
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(60983, 60983)
 As we proved instead,the doping level of the base material and its doping type as well asShockley-Read-Hall (SR<missing VAR>H) and surface recombination velocities are much moreimportant factors responsible for the photoconversion.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 27, '%', 1],[165.0, 30, '%', 3]

GaAs
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(61046, 61047)
 We found that themaximum photoconversion efficiency (about 27% for AM<missing VAR>1.5 conditions) in GaAswith typical parameters of recombination centers can be reached for p<missing VAR>-type basedoped at 2 cdot 1017 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 27, '%', 0],[101.0, 30, '%', 2]

VOC
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(61101, 61103)
 The open circuit voltage VOCformation features are analyzed.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 27, '%', 1],[45.0, 30, '%', 1]

VOC
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(61130, 61132)
 The optimization provides a significantincrease in VOC and the limiting photoconversion efficiency close to 30%.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 27, '%', 2],[16.0, 30, '%', 0]

C
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(61242, 61242)
 Obtained formalism allows to analyze and to optimize massproduction both tandem solar cell (T<missing VAR>SC) and one-junction SC parameters.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 27, '%', 4],[94.0, 30, '%', 2]

SC
###New formalism for selfconsistent parameters optimization of highly efficient solar cells|A. V. Sachenko,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi,A. Chkrebtii###
(61251, 61252)
 Obtained formalism allows to analyze and to optimize massproduction both tandem solar cell (T<missing VAR>SC) and one-junction SC parameters.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 27, '%', 4],[103.0, 30, '%', 2]

UV
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61273, 61274)
Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[328.0, 8.34, '%', 6],[347.0, 15.15, 'mA', 6],[350.0, 2, ',', 6],[364.0, 756, 'mV', 6],[380.0, 71.1, '%', 6],[432.0, 52.4, '%', 7],[500.0, 12.4, 'to', 8],[502.0, 23.4, '%', 8],[508.0, 1, 's', 8],[515.0, 9.3, 'to', 8],[517.0, 14.3, '%', 8],[524.0, 2, 'p', 8],[567.0, 16.36, 'nm', 9]

TiO2
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61319, 61321)
 The surface states of the active TiO2 layer is crucial while fabricating anefficient solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 8.34, '%', 5],[300.0, 15.15, 'mA', 5],[303.0, 2, ',', 5],[317.0, 756, 'mV', 5],[333.0, 71.1, '%', 5],[385.0, 52.4, '%', 6],[453.0, 12.4, 'to', 7],[455.0, 23.4, '%', 7],[461.0, 1, 's', 7],[468.0, 9.3, 'to', 7],[470.0, 14.3, '%', 7],[477.0, 2, 'p', 7],[520.0, 16.36, 'nm', 8]

TiO2
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61360, 61362)
 This work experimentally analyses the effect of exposingTiO2 based electron transport layer (ETL) to the ultraviolet-ozone (UV-O3) andoptimizes the exposure time for improving power conversion efficiency (PCE) offabricated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 8.34, '%', 4],[259.0, 15.15, 'mA', 4],[262.0, 2, ',', 4],[276.0, 756, 'mV', 4],[292.0, 71.1, '%', 4],[344.0, 52.4, '%', 5],[412.0, 12.4, 'to', 6],[414.0, 23.4, '%', 6],[420.0, 1, 's', 6],[427.0, 9.3, 'to', 6],[429.0, 14.3, '%', 6],[436.0, 2, 'p', 6],[479.0, 16.36, 'nm', 7]

UV
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61387, 61388)
 This work experimentally analyses the effect of exposingTiO2 based electron transport layer (ETL) to the ultraviolet-ozone (UV-O3) andoptimizes the exposure time for improving power conversion efficiency (PCE) offabricated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[214.0, 8.34, '%', 4],[233.0, 15.15, 'mA', 4],[236.0, 2, ',', 4],[250.0, 756, 'mV', 4],[266.0, 71.1, '%', 4],[318.0, 52.4, '%', 5],[386.0, 12.4, 'to', 6],[388.0, 23.4, '%', 6],[394.0, 1, 's', 6],[401.0, 9.3, 'to', 6],[403.0, 14.3, '%', 6],[410.0, 2, 'p', 6],[453.0, 16.36, 'nm', 7]

O3
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61390, 61391)
 This work experimentally analyses the effect of exposingTiO2 based electron transport layer (ETL) to the ultraviolet-ozone (UV-O3) andoptimizes the exposure time for improving power conversion efficiency (PCE) offabricated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 8.34, '%', 4],[230.0, 15.15, 'mA', 4],[233.0, 2, ',', 4],[247.0, 756, 'mV', 4],[263.0, 71.1, '%', 4],[315.0, 52.4, '%', 5],[383.0, 12.4, 'to', 6],[385.0, 23.4, '%', 6],[391.0, 1, 's', 6],[398.0, 9.3, 'to', 6],[400.0, 14.3, '%', 6],[407.0, 2, 'p', 6],[450.0, 16.36, 'nm', 7]

PC
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61416, 61417)
 This work experimentally analyses the effect of exposingTiO2 based electron transport layer (ETL) to the ultraviolet-ozone (UV-O3) andoptimizes the exposure time for improving power conversion efficiency (PCE) offabricated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 8.34, '%', 4],[204.0, 15.15, 'mA', 4],[207.0, 2, ',', 4],[221.0, 756, 'mV', 4],[237.0, 71.1, '%', 4],[289.0, 52.4, '%', 5],[357.0, 12.4, 'to', 6],[359.0, 23.4, '%', 6],[365.0, 1, 's', 6],[372.0, 9.3, 'to', 6],[374.0, 14.3, '%', 6],[381.0, 2, 'p', 6],[424.0, 16.36, 'nm', 7]

Cs
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61438, 61438)
 This work experimentally analyses the effect of exposingTiO2 based electron transport layer (ETL) to the ultraviolet-ozone (UV-O3) andoptimizes the exposure time for improving power conversion efficiency (PCE) offabricated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 8.34, '%', 4],[183.0, 15.15, 'mA', 4],[186.0, 2, ',', 4],[200.0, 756, 'mV', 4],[216.0, 71.1, '%', 4],[268.0, 52.4, '%', 5],[336.0, 12.4, 'to', 6],[338.0, 23.4, '%', 6],[344.0, 1, 's', 6],[351.0, 9.3, 'to', 6],[353.0, 14.3, '%', 6],[360.0, 2, 'p', 6],[403.0, 16.36, 'nm', 7]

SSCs
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61458, 61460)
 These results demonstrate thatthe performance of D<missing VAR>SSCs can be improved significantly by UV-O3 exposure ofsintered TiO2 photoanode surface, with the duration of exposure being acritical parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 8.34, '%', 3],[161.0, 15.15, 'mA', 3],[164.0, 2, ',', 3],[178.0, 756, 'mV', 3],[194.0, 71.1, '%', 3],[246.0, 52.4, '%', 4],[314.0, 12.4, 'to', 5],[316.0, 23.4, '%', 5],[322.0, 1, 's', 5],[329.0, 9.3, 'to', 5],[331.0, 14.3, '%', 5],[338.0, 2, 'p', 5],[381.0, 16.36, 'nm', 6]

UV
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61472, 61473)
 These results demonstrate thatthe performance of D<missing VAR>SSCs can be improved significantly by UV-O3 exposure ofsintered TiO2 photoanode surface, with the duration of exposure being acritical parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[129.0, 8.34, '%', 3],[148.0, 15.15, 'mA', 3],[151.0, 2, ',', 3],[165.0, 756, 'mV', 3],[181.0, 71.1, '%', 3],[233.0, 52.4, '%', 4],[301.0, 12.4, 'to', 5],[303.0, 23.4, '%', 5],[309.0, 1, 's', 5],[316.0, 9.3, 'to', 5],[318.0, 14.3, '%', 5],[325.0, 2, 'p', 5],[368.0, 16.36, 'nm', 6]

O3
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61475, 61476)
 These results demonstrate thatthe performance of D<missing VAR>SSCs can be improved significantly by UV-O3 exposure ofsintered TiO2 photoanode surface, with the duration of exposure being acritical parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 8.34, '%', 3],[145.0, 15.15, 'mA', 3],[148.0, 2, ',', 3],[162.0, 756, 'mV', 3],[178.0, 71.1, '%', 3],[230.0, 52.4, '%', 4],[298.0, 12.4, 'to', 5],[300.0, 23.4, '%', 5],[306.0, 1, 's', 5],[313.0, 9.3, 'to', 5],[315.0, 14.3, '%', 5],[322.0, 2, 'p', 5],[365.0, 16.36, 'nm', 6]

TiO2
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61485, 61487)
 These results demonstrate thatthe performance of D<missing VAR>SSCs can be improved significantly by UV-O3 exposure ofsintered TiO2 photoanode surface, with the duration of exposure being acritical parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 8.34, '%', 3],[134.0, 15.15, 'mA', 3],[137.0, 2, ',', 3],[151.0, 756, 'mV', 3],[167.0, 71.1, '%', 3],[219.0, 52.4, '%', 4],[287.0, 12.4, 'to', 5],[289.0, 23.4, '%', 5],[295.0, 1, 's', 5],[302.0, 9.3, 'to', 5],[304.0, 14.3, '%', 5],[311.0, 2, 'p', 5],[354.0, 16.36, 'nm', 6]

PC
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61528, 61529)
 Fabricated devices show 33.01 % increase in PCE<missing VAR> for theoptimum exposure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 8.34, '%', 2],[92.0, 15.15, 'mA', 2],[95.0, 2, ',', 2],[109.0, 756, 'mV', 2],[125.0, 71.1, '%', 2],[177.0, 52.4, '%', 3],[245.0, 12.4, 'to', 4],[247.0, 23.4, '%', 4],[253.0, 1, 's', 4],[260.0, 9.3, 'to', 4],[262.0, 14.3, '%', 4],[269.0, 2, 'p', 4],[312.0, 16.36, 'nm', 5]

PC
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61596, 61597)
 The device withoptimum exposure exhibits the highest PCE<missing VAR> of 8.34% with short circuit currentdensity (Jsc) of 15.15 mA/cm2, open circuit voltage (Voc) of 756 mV and Fillfactor (FF) of 71.10%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 8.34, '%', 0],[24.0, 15.15, 'mA', 0],[27.0, 2, ',', 0],[41.0, 756, 'mV', 0],[57.0, 71.1, '%', 0],[109.0, 52.4, '%', 1],[177.0, 12.4, 'to', 2],[179.0, 23.4, '%', 2],[185.0, 1, 's', 2],[192.0, 9.3, 'to', 2],[194.0, 14.3, '%', 2],[201.0, 2, 'p', 2],[244.0, 16.36, 'nm', 3]

(FF)
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61647, 61650)
 The device withoptimum exposure exhibits the highest PCE<missing VAR> of 8.34% with short circuit currentdensity (Jsc) of 15.15 mA/cm2, open circuit voltage (Voc) of 756 mV and Fillfactor (FF) of 71.10%.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 8.34, '%', 0],[26.0, 15.15, 'mA', 0],[23.0, 2, ',', 0],[9.0, 756, 'mV', 0],[4.0, 71.1, '%', 0],[56.0, 52.4, '%', 1],[124.0, 12.4, 'to', 2],[126.0, 23.4, '%', 2],[132.0, 1, 's', 2],[139.0, 9.3, 'to', 2],[141.0, 14.3, '%', 2],[148.0, 2, 'p', 2],[191.0, 16.36, 'nm', 3]

C
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61691, 61691)
 This increase in efficiency is attributed to theenhanced crystallization and reduction in the organic contaminants C-C/C-H from57.90 to 52.40% as shown by the X<missing VAR>-ray diffraction (XRD) and X<missing VAR>-ray photoelectronspectroscopy (X<missing VAR>PS), respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 8.34, '%', 1],[70.0, 15.15, 'mA', 1],[67.0, 2, ',', 1],[53.0, 756, 'mV', 1],[37.0, 71.1, '%', 1],[15.0, 52.4, '%', 0],[83.0, 12.4, 'to', 1],[85.0, 23.4, '%', 1],[91.0, 1, 's', 1],[98.0, 9.3, 'to', 1],[100.0, 14.3, '%', 1],[107.0, 2, 'p', 1],[150.0, 16.36, 'nm', 2]

C/C
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61693, 61695)
 This increase in efficiency is attributed to theenhanced crystallization and reduction in the organic contaminants C-C/C-H from57.90 to 52.40% as shown by the X<missing VAR>-ray diffraction (XRD) and X<missing VAR>-ray photoelectronspectroscopy (X<missing VAR>PS), respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[91.0, 8.34, '%', 1],[72.0, 15.15, 'mA', 1],[69.0, 2, ',', 1],[55.0, 756, 'mV', 1],[39.0, 71.1, '%', 1],[11.0, 52.4, '%', 0],[79.0, 12.4, 'to', 1],[81.0, 23.4, '%', 1],[87.0, 1, 's', 1],[94.0, 9.3, 'to', 1],[96.0, 14.3, '%', 1],[103.0, 2, 'p', 1],[146.0, 16.36, 'nm', 2]

H
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61697, 61697)
 This increase in efficiency is attributed to theenhanced crystallization and reduction in the organic contaminants C-C/C-H from57.90 to 52.40% as shown by the X<missing VAR>-ray diffraction (XRD) and X<missing VAR>-ray photoelectronspectroscopy (X<missing VAR>PS), respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 8.34, '%', 1],[76.0, 15.15, 'mA', 1],[73.0, 2, ',', 1],[59.0, 756, 'mV', 1],[43.0, 71.1, '%', 1],[9.0, 52.4, '%', 0],[77.0, 12.4, 'to', 1],[79.0, 23.4, '%', 1],[85.0, 1, 's', 1],[92.0, 9.3, 'to', 1],[94.0, 14.3, '%', 1],[101.0, 2, 'p', 1],[144.0, 16.36, 'nm', 2]

S
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61743, 61743)
 This increase in efficiency is attributed to theenhanced crystallization and reduction in the organic contaminants C-C/C-H from57.90 to 52.40% as shown by the X<missing VAR>-ray diffraction (XRD) and X<missing VAR>-ray photoelectronspectroscopy (X<missing VAR>PS), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 8.34, '%', 1],[122.0, 15.15, 'mA', 1],[119.0, 2, ',', 1],[105.0, 756, 'mV', 1],[89.0, 71.1, '%', 1],[37.0, 52.4, '%', 0],[31.0, 12.4, 'to', 1],[33.0, 23.4, '%', 1],[39.0, 1, 's', 1],[46.0, 9.3, 'to', 1],[48.0, 14.3, '%', 1],[55.0, 2, 'p', 1],[98.0, 16.36, 'nm', 2]

PS
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61753, 61754)
 The X<missing VAR>PS result further indicates an increasein oxygen vacancy from 12.40 to 23.40% for O 1s state and from 9.30 to 14.30%for Ti 2p state of Ti3+.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 8.34, '%', 2],[132.0, 15.15, 'mA', 2],[129.0, 2, ',', 2],[115.0, 756, 'mV', 2],[99.0, 71.1, '%', 2],[47.0, 52.4, '%', 1],[20.0, 12.4, 'to', 0],[22.0, 23.4, '%', 0],[28.0, 1, 's', 0],[35.0, 9.3, 'to', 0],[37.0, 14.3, '%', 0],[44.0, 2, 'p', 0],[87.0, 16.36, 'nm', 1]

O
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61781, 61781)
 The X<missing VAR>PS result further indicates an increasein oxygen vacancy from 12.40 to 23.40% for O 1s state and from 9.30 to 14.30%for Ti 2p state of Ti3+.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 8.34, '%', 2],[160.0, 15.15, 'mA', 2],[157.0, 2, ',', 2],[143.0, 756, 'mV', 2],[127.0, 71.1, '%', 2],[75.0, 52.4, '%', 1],[7.0, 12.4, 'to', 0],[5.0, 23.4, '%', 0],[1.0, 1, 's', 0],[8.0, 9.3, 'to', 0],[10.0, 14.3, '%', 0],[17.0, 2, 'p', 0],[60.0, 16.36, 'nm', 1]

Ti
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61797, 61797)
 The X<missing VAR>PS result further indicates an increasein oxygen vacancy from 12.40 to 23.40% for O 1s state and from 9.30 to 14.30%for Ti 2p state of Ti3+.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 8.34, '%', 2],[176.0, 15.15, 'mA', 2],[173.0, 2, ',', 2],[159.0, 756, 'mV', 2],[143.0, 71.1, '%', 2],[91.0, 52.4, '%', 1],[23.0, 12.4, 'to', 0],[21.0, 23.4, '%', 0],[15.0, 1, 's', 0],[8.0, 9.3, 'to', 0],[6.0, 14.3, '%', 0],[1.0, 2, 'p', 0],[44.0, 16.36, 'nm', 1]

F
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61823, 61823)
 Results from the Atomic Force Microscope (AFM) alsoconfirms the minimized surface roughness of 16.36 nm for the optimally exposedTiO2 film, and increase in hydrophilicity leading to improved efficiency of thesolar cells which were optimally exposed to UV-O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 8.34, '%', 3],[202.0, 15.15, 'mA', 3],[199.0, 2, ',', 3],[185.0, 756, 'mV', 3],[169.0, 71.1, '%', 3],[117.0, 52.4, '%', 2],[49.0, 12.4, 'to', 1],[47.0, 23.4, '%', 1],[41.0, 1, 's', 1],[34.0, 9.3, 'to', 1],[32.0, 14.3, '%', 1],[25.0, 2, 'p', 1],[18.0, 16.36, 'nm', 0]

TiO2
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61852, 61854)
 Results from the Atomic Force Microscope (AFM) alsoconfirms the minimized surface roughness of 16.36 nm for the optimally exposedTiO2 film, and increase in hydrophilicity leading to improved efficiency of thesolar cells which were optimally exposed to UV-O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 8.34, '%', 3],[231.0, 15.15, 'mA', 3],[228.0, 2, ',', 3],[214.0, 756, 'mV', 3],[198.0, 71.1, '%', 3],[146.0, 52.4, '%', 2],[78.0, 12.4, 'to', 1],[76.0, 23.4, '%', 1],[70.0, 1, 's', 1],[63.0, 9.3, 'to', 1],[61.0, 14.3, '%', 1],[54.0, 2, 'p', 1],[11.0, 16.36, 'nm', 0]

UV
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61894, 61895)
 Results from the Atomic Force Microscope (AFM) alsoconfirms the minimized surface roughness of 16.36 nm for the optimally exposedTiO2 film, and increase in hydrophilicity leading to improved efficiency of thesolar cells which were optimally exposed to UV-O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[292.0, 8.34, '%', 3],[273.0, 15.15, 'mA', 3],[270.0, 2, ',', 3],[256.0, 756, 'mV', 3],[240.0, 71.1, '%', 3],[188.0, 52.4, '%', 2],[120.0, 12.4, 'to', 1],[118.0, 23.4, '%', 1],[112.0, 1, 's', 1],[105.0, 9.3, 'to', 1],[103.0, 14.3, '%', 1],[96.0, 2, 'p', 1],[53.0, 16.36, 'nm', 0]

O3
###Optimization and effect of UV-ozone exposure of electron transport layer on the efficiency of the dye-sensitized solar cells|Chandan Dawo,Mohammad Adil Afroz,Parameswar Krishnan Iyer,Harsh Chaturvedi###
(61897, 61898)
 Results from the Atomic Force Microscope (AFM) alsoconfirms the minimized surface roughness of 16.36 nm for the optimally exposedTiO2 film, and increase in hydrophilicity leading to improved efficiency of thesolar cells which were optimally exposed to UV-O3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 8.34, '%', 3],[276.0, 15.15, 'mA', 3],[273.0, 2, ',', 3],[259.0, 756, 'mV', 3],[243.0, 71.1, '%', 3],[191.0, 52.4, '%', 2],[123.0, 12.4, 'to', 1],[121.0, 23.4, '%', 1],[115.0, 1, 's', 1],[108.0, 9.3, 'to', 1],[106.0, 14.3, '%', 1],[99.0, 2, 'p', 1],[56.0, 16.36, 'nm', 0]

CdTe/CdSe
###All-Inorganic Spin-Cast Nanoparticle Solar Cells with Non-Selective Electrodes|I. E. Anderson,J. D. Olson,L. Yang,S. A. Carter###
(61957, 61961)
 Spin-cast all-inorganic nanoparticle solutions have been used to make aCdTe/CdSe solar cell with an efficiency of up to 2.8% without alumina orcalcium buffer layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[18.0, 2.8, '%', 0]

Cu
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62631, 62631)
Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 13.2, '%', 1],[130.0, 1.75, 'V', 1]

In
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62633, 62633)
Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 13.2, '%', 1],[128.0, 1.75, 'V', 1]

Ga
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62635, 62635)
Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 13.2, '%', 1],[126.0, 1.75, 'V', 1]

Se2
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62637, 62638)
Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 13.2, '%', 1],[123.0, 1.75, 'V', 1]

Cu
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62667, 62667)
 We report a proof-of-concept two-terminal perovskite/Cu(In, Ga)Se2 (CIG<missing VAR>S)monolithic thin-film tandem solar cell grown on ultra-thin (30-microns thick),light-weight, and flexible polyimide foil with a steady-state power conversionefficiency of 13.2% and a high open-circuit voltage over 1.75 V under standardtest condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 13.2, '%', 0],[94.0, 1.75, 'V', 0]

In
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62669, 62669)
 We report a proof-of-concept two-terminal perovskite/Cu(In, Ga)Se2 (CIG<missing VAR>S)monolithic thin-film tandem solar cell grown on ultra-thin (30-microns thick),light-weight, and flexible polyimide foil with a steady-state power conversionefficiency of 13.2% and a high open-circuit voltage over 1.75 V under standardtest condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 13.2, '%', 0],[92.0, 1.75, 'V', 0]

Ga
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62672, 62672)
 We report a proof-of-concept two-terminal perovskite/Cu(In, Ga)Se2 (CIG<missing VAR>S)monolithic thin-film tandem solar cell grown on ultra-thin (30-microns thick),light-weight, and flexible polyimide foil with a steady-state power conversionefficiency of 13.2% and a high open-circuit voltage over 1.75 V under standardtest condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 13.2, '%', 0],[89.0, 1.75, 'V', 0]

Se2
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62674, 62675)
 We report a proof-of-concept two-terminal perovskite/Cu(In, Ga)Se2 (CIG<missing VAR>S)monolithic thin-film tandem solar cell grown on ultra-thin (30-microns thick),light-weight, and flexible polyimide foil with a steady-state power conversionefficiency of 13.2% and a high open-circuit voltage over 1.75 V under standardtest condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 13.2, '%', 0],[86.0, 1.75, 'V', 0]

CI
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62678, 62679)
 We report a proof-of-concept two-terminal perovskite/Cu(In, Ga)Se2 (CIG<missing VAR>S)monolithic thin-film tandem solar cell grown on ultra-thin (30-microns thick),light-weight, and flexible polyimide foil with a steady-state power conversionefficiency of 13.2% and a high open-circuit voltage over 1.75 V under standardtest condition.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 13.2, '%', 0],[82.0, 1.75, 'V', 0]

S
###Flexible perovskite/Cu(In,Ga)Se2 monolithic tandem solar cells|Fan Fu,Shiro Nishiwaki,Jeremie Werner,Thomas Feurer,Stefano Pisoni,Quentin Jeangros,Stephan Buecheler,Christophe Ballif,Ayodhya N. Tiwari###
(62681, 62681)
 We report a proof-of-concept two-terminal perovskite/Cu(In, Ga)Se2 (CIG<missing VAR>S)monolithic thin-film tandem solar cell grown on ultra-thin (30-microns thick),light-weight, and flexible polyimide foil with a steady-state power conversionefficiency of 13.2% and a high open-circuit voltage over 1.75 V under standardtest condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 13.2, '%', 0],[80.0, 1.75, 'V', 0]

In
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(62828, 62828)
 In order to obtain higher conversion efficiency and to reduce production costfor amorphous silicon/crystalline silicon (a-Si/c<missing VAR>-Si) based heterojunctionsolar cells, a Heterojunction of Amorphous silicon and Crystalline silicon withLocalized pn structure (HACL) has been designed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 28.18, '%', 3],[255.0, 43.06, 'mA', 3],[258.0, 2, ',', 3]

Si
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(62866, 62866)
 In order to obtain higher conversion efficiency and to reduce production costfor amorphous silicon/crystalline silicon (a-Si/c<missing VAR>-Si) based heterojunctionsolar cells, a Heterojunction of Amorphous silicon and Crystalline silicon withLocalized pn structure (HACL) has been designed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 28.18, '%', 3],[217.0, 43.06, 'mA', 3],[220.0, 2, ',', 3]

Si
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(62870, 62870)
 In order to obtain higher conversion efficiency and to reduce production costfor amorphous silicon/crystalline silicon (a-Si/c<missing VAR>-Si) based heterojunctionsolar cells, a Heterojunction of Amorphous silicon and Crystalline silicon withLocalized pn structure (HACL) has been designed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 28.18, '%', 3],[213.0, 43.06, 'mA', 3],[216.0, 2, ',', 3]

H
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(62909, 62909)
 In order to obtain higher conversion efficiency and to reduce production costfor amorphous silicon/crystalline silicon (a-Si/c<missing VAR>-Si) based heterojunctionsolar cells, a Heterojunction of Amorphous silicon and Crystalline silicon withLocalized pn structure (HACL) has been designed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 28.18, '%', 3],[174.0, 43.06, 'mA', 3],[177.0, 2, ',', 3]

C
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(62911, 62911)
 In order to obtain higher conversion efficiency and to reduce production costfor amorphous silicon/crystalline silicon (a-Si/c<missing VAR>-Si) based heterojunctionsolar cells, a Heterojunction of Amorphous silicon and Crystalline silicon withLocalized pn structure (HACL) has been designed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 28.18, '%', 3],[172.0, 43.06, 'mA', 3],[175.0, 2, ',', 3]

H
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(62933, 62933)
 The potential performance ofthe HACL<missing VAR> solar cell has been assessed by ATLAS simulation program.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 28.18, '%', 2],[150.0, 43.06, 'mA', 2],[153.0, 2, ',', 2]

C
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(62935, 62935)
 The potential performance ofthe HACL<missing VAR> solar cell has been assessed by ATLAS simulation program.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 28.18, '%', 2],[148.0, 43.06, 'mA', 2],[151.0, 2, ',', 2]

S
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(62954, 62954)
 The potential performance ofthe HACL<missing VAR> solar cell has been assessed by ATLAS simulation program.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 28.18, '%', 2],[129.0, 43.06, 'mA', 2],[132.0, 2, ',', 2]

HI
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(62992, 62993)
 Itspotential performance is compared with that of the Heterojunction withIntrinsic Thin film (HIT) and Heterojunction of Amorphous silicon andCrystalline silicon with Diffused junction (HACD) solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 28.18, '%', 1],[90.0, 43.06, 'mA', 1],[93.0, 2, ',', 1]

H
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63021, 63021)
 Itspotential performance is compared with that of the Heterojunction withIntrinsic Thin film (HIT) and Heterojunction of Amorphous silicon andCrystalline silicon with Diffused junction (HACD) solar cells.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 28.18, '%', 1],[62.0, 43.06, 'mA', 1],[65.0, 2, ',', 1]

C
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63023, 63023)
 Itspotential performance is compared with that of the Heterojunction withIntrinsic Thin film (HIT) and Heterojunction of Amorphous silicon andCrystalline silicon with Diffused junction (HACD) solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 28.18, '%', 1],[60.0, 43.06, 'mA', 1],[63.0, 2, ',', 1]

H
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63066, 63066)
 The simulatedresults indicated that the conversion efficiency and the short-circuit currentdensity of the HACL<missing VAR> cell can reach to 28.18% and 43.06 mA/cm2, respectively,and are higher than that of the HIT<missing VAR> and HACD<missing VAR> cells.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 28.18, '%', 0],[17.0, 43.06, 'mA', 0],[20.0, 2, ',', 0]

C
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63068, 63068)
 The simulatedresults indicated that the conversion efficiency and the short-circuit currentdensity of the HACL<missing VAR> cell can reach to 28.18% and 43.06 mA/cm2, respectively,and are higher than that of the HIT<missing VAR> and HACD<missing VAR> cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 28.18, '%', 0],[15.0, 43.06, 'mA', 0],[18.0, 2, ',', 0]

HI
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63107, 63108)
 The simulatedresults indicated that the conversion efficiency and the short-circuit currentdensity of the HACL<missing VAR> cell can reach to 28.18% and 43.06 mA/cm2, respectively,and are higher than that of the HIT<missing VAR> and HACD<missing VAR> cells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 28.18, '%', 0],[24.0, 43.06, 'mA', 0],[21.0, 2, ',', 0]

H
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63113, 63113)
 The simulatedresults indicated that the conversion efficiency and the short-circuit currentdensity of the HACL<missing VAR> cell can reach to 28.18% and 43.06 mA/cm2, respectively,and are higher than that of the HIT<missing VAR> and HACD<missing VAR> cells.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 28.18, '%', 0],[30.0, 43.06, 'mA', 0],[27.0, 2, ',', 0]

C
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63115, 63115)
 The simulatedresults indicated that the conversion efficiency and the short-circuit currentdensity of the HACL<missing VAR> cell can reach to 28.18% and 43.06 mA/cm2, respectively,and are higher than that of the HIT<missing VAR> and HACD<missing VAR> cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 28.18, '%', 0],[32.0, 43.06, 'mA', 0],[29.0, 2, ',', 0]

H
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63196, 63196)
Moreover, the HACL<missing VAR> structure can decrease the consumption of rare materials,such as indium, since the transparent conductive oxide (T<missing VAR>CO) can be free inthis structure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 28.18, '%', 2],[113.0, 43.06, 'mA', 2],[110.0, 2, ',', 2]

C
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63198, 63198)
Moreover, the HACL<missing VAR> structure can decrease the consumption of rare materials,such as indium, since the transparent conductive oxide (T<missing VAR>CO) can be free inthis structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 28.18, '%', 2],[115.0, 43.06, 'mA', 2],[112.0, 2, ',', 2]

O
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63239, 63239)
Moreover, the HACL<missing VAR> structure can decrease the consumption of rare materials,such as indium, since the transparent conductive oxide (T<missing VAR>CO) can be free inthis structure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 28.18, '%', 2],[156.0, 43.06, 'mA', 2],[153.0, 2, ',', 2]

H
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63266, 63266)
 It is concluded that the HACL<missing VAR> solar cell is a promisingstructure for high efficiency and low cost.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 28.18, '%', 3],[183.0, 43.06, 'mA', 3],[180.0, 2, ',', 3]

C
###From planar junction to local junction: A new structure design of amorphous/crystalline silicon heterojunction solar cells for high efficiency and low cost|Haibin Huang,Lang Zhou,Jiren Yuan,Zhijue Quan###
(63268, 63268)
 It is concluded that the HACL<missing VAR> solar cell is a promisingstructure for high efficiency and low cost.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 28.18, '%', 3],[185.0, 43.06, 'mA', 3],[182.0, 2, ',', 3]

GaAs
###Engineering the reciprocal space for ultrathin GaAs solar cells|Jeronimo Buencuerpo,Jose M. Llorens,Jose M. Ripalda,Myles A. Steiner,Adele C. Tamboli###
(63317, 63318)
Engineering the reciprocal space for ultrathin GaAs solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 100, 'nm', 8],[368.0, 25.3, 'mA', 9],[371.0, 2, ',', 9],[390.0, 16.1, 'mA', 9]

III
###Engineering the reciprocal space for ultrathin GaAs solar cells|Jeronimo Buencuerpo,Jose M. Llorens,Jose M. Ripalda,Myles A. Steiner,Adele C. Tamboli###
(63325, 63327)
 III-V solar cells dominate the high efficiency charts, but with significantlyhigher cost than other solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 100, 'nm', 7],[359.0, 25.3, 'mA', 8],[362.0, 2, ',', 8],[381.0, 16.1, 'mA', 8]

V
###Engineering the reciprocal space for ultrathin GaAs solar cells|Jeronimo Buencuerpo,Jose M. Llorens,Jose M. Ripalda,Myles A. Steiner,Adele C. Tamboli###
(63329, 63329)
 III-V solar cells dominate the high efficiency charts, but with significantlyhigher cost than other solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 100, 'nm', 7],[357.0, 25.3, 'mA', 8],[360.0, 2, ',', 8],[379.0, 16.1, 'mA', 8]

III
###Engineering the reciprocal space for ultrathin GaAs solar cells|Jeronimo Buencuerpo,Jose M. Llorens,Jose M. Ripalda,Myles A. Steiner,Adele C. Tamboli###
(63368, 63370)
 Ultrathin III-V solar cells can exhibitlower production costs and immunity to short carrier diffusion lengths causedby radiation damage, dislocations, or native defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 100, 'nm', 6],[316.0, 25.3, 'mA', 7],[319.0, 2, ',', 7],[338.0, 16.1, 'mA', 7]

V
###Engineering the reciprocal space for ultrathin GaAs solar cells|Jeronimo Buencuerpo,Jose M. Llorens,Jose M. Ripalda,Myles A. Steiner,Adele C. Tamboli###
(63372, 63372)
 Ultrathin III-V solar cells can exhibitlower production costs and immunity to short carrier diffusion lengths causedby radiation damage, dislocations, or native defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 100, 'nm', 6],[314.0, 25.3, 'mA', 7],[317.0, 2, ',', 7],[336.0, 16.1, 'mA', 7]

In
###Engineering the reciprocal space for ultrathin GaAs solar cells|Jeronimo Buencuerpo,Jose M. Llorens,Jose M. Ripalda,Myles A. Steiner,Adele C. Tamboli###
(63578, 63578)
 In this work, wepresent a design method to evolve a simple photonic crystal into a quasirandomstructure by modifying the spatial-Fourier space in a controlled manner.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 100, 'nm', 1],[108.0, 25.3, 'mA', 2],[111.0, 2, ',', 2],[130.0, 16.1, 'mA', 2]

GaAs
###Engineering the reciprocal space for ultrathin GaAs solar cells|Jeronimo Buencuerpo,Jose M. Llorens,Jose M. Ripalda,Myles A. Steiner,Adele C. Tamboli###
(63653, 63654)
 Weapply these structures to an ultrathin GaAs solar cell of only 100 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 100, 'nm', 0],[32.0, 25.3, 'mA', 1],[35.0, 2, ',', 1],[54.0, 16.1, 'mA', 1]

SH
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(63915, 63916)
 Great achievements in last five years, such as record-efficientamorphous/crystalline silicon heterojunction (SHJ) solar cells and cutting-edgeperovskite/SHJ<missing VAR> tandem solar cells, place hydrogenated amorphous silicon(a-SiH) at the forefront of emerging photovoltaics.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 25.18, '%', 4],[287.0, 26.05, '%', 4],[304.0, 85.42, '%', 4],[366.0, 98.3, 'per', 6]

SH
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(63933, 63934)
 Great achievements in last five years, such as record-efficientamorphous/crystalline silicon heterojunction (SHJ) solar cells and cutting-edgeperovskite/SHJ<missing VAR> tandem solar cells, place hydrogenated amorphous silicon(a-SiH) at the forefront of emerging photovoltaics.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 25.18, '%', 4],[269.0, 26.05, '%', 4],[286.0, 85.42, '%', 4],[348.0, 98.3, 'per', 6]

H
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(63957, 63957)
 Great achievements in last five years, such as record-efficientamorphous/crystalline silicon heterojunction (SHJ) solar cells and cutting-edgeperovskite/SHJ<missing VAR> tandem solar cells, place hydrogenated amorphous silicon(a-SiH) at the forefront of emerging photovoltaics.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 25.18, '%', 4],[246.0, 26.05, '%', 4],[263.0, 85.42, '%', 4],[325.0, 98.3, 'per', 6]

(B)
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(63994, 63996)
 Due to the extremely lowdoping efficiency of trivalent boron (B) in amorphous tetravalent silicon,light harvesting of aforementioned devices are limited by their fill factors(FF), which is a direct metric of the charge carrier transport.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 25.18, '%', 3],[207.0, 26.05, '%', 3],[224.0, 85.42, '%', 3],[286.0, 98.3, 'per', 5]

(FF)
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64031, 64034)
 Due to the extremely lowdoping efficiency of trivalent boron (B) in amorphous tetravalent silicon,light harvesting of aforementioned devices are limited by their fill factors(FF), which is a direct metric of the charge carrier transport.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 25.18, '%', 3],[169.0, 26.05, '%', 3],[186.0, 85.42, '%', 3],[248.0, 98.3, 'per', 5]

SiH
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64081, 64082)
 It ischallenging but crucial to develop highly conductive doped a-SiH forminimizing the FF losses.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 25.18, '%', 2],[121.0, 26.05, '%', 2],[138.0, 85.42, '%', 2],[200.0, 98.3, 'per', 4]

FF
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64091, 64092)
 It ischallenging but crucial to develop highly conductive doped a-SiH forminimizing the FF losses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 25.18, '%', 2],[111.0, 26.05, '%', 2],[128.0, 85.42, '%', 2],[190.0, 98.3, 'per', 4]

B
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64124, 64124)
 Here we report intensive light soaking canefficiently boost the dark conductance of B-doped a-SiH thin films, which isan abnormal Staebler-Wronski effect.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 25.18, '%', 1],[79.0, 26.05, '%', 1],[96.0, 85.42, '%', 1],[158.0, 98.3, 'per', 3]

SiH
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64130, 64131)
 Here we report intensive light soaking canefficiently boost the dark conductance of B-doped a-SiH thin films, which isan abnormal Staebler-Wronski effect.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 25.18, '%', 1],[72.0, 26.05, '%', 1],[89.0, 85.42, '%', 1],[151.0, 98.3, 'per', 3]

SH
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64167, 64168)
 By implementing this abnormal effect toSHJ<missing VAR> solar cells, we achieve a certificated power conversion efficiency (PCE) of25.18% (26.05% on designated area) with FF of 85.42% on a 244.63-cm2 wafer.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 25.18, '%', 0],[35.0, 26.05, '%', 0],[52.0, 85.42, '%', 0],[114.0, 98.3, 'per', 2]

PC
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64191, 64192)
 By implementing this abnormal effect toSHJ<missing VAR> solar cells, we achieve a certificated power conversion efficiency (PCE) of25.18% (26.05% on designated area) with FF of 85.42% on a 244.63-cm2 wafer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 25.18, '%', 0],[11.0, 26.05, '%', 0],[28.0, 85.42, '%', 0],[90.0, 98.3, 'per', 2]

FF
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64215, 64216)
 By implementing this abnormal effect toSHJ<missing VAR> solar cells, we achieve a certificated power conversion efficiency (PCE) of25.18% (26.05% on designated area) with FF of 85.42% on a 244.63-cm2 wafer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 25.18, '%', 0],[12.0, 26.05, '%', 0],[4.0, 85.42, '%', 0],[66.0, 98.3, 'per', 2]

PC
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64238, 64239)
This PCE<missing VAR> is one of the highest reported values for total-area top/rearcontact silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 25.18, '%', 1],[35.0, 26.05, '%', 1],[18.0, 85.42, '%', 1],[43.0, 98.3, 'per', 1]

FF
###Abnormal Staebler-Wronski effect of amorphous silicon|Wenzhu Liu,Jianhua Shi,Liping Zhang,Anjun Han,Shenglei Huang,Xiaodong Li,Jun Peng,Yuhao Yang,Yajun Gao,Jian Yu,Kai Jiang,Xinbo Yang,Zhenfei Li,Junlin Du,Xin Song,Youlin Yu,Zhixin Ma,Yubo Yao,Haichuan Zhang,Lujia Xu,Jingxuan Kang,Yi Xie,Hanyuan Liu,Fanying Meng,Frédéric Laquai,Zengfeng Di,Zhengxin Liu###
(64278, 64279)
 The FF reaches 98.30 per cent of itsShockley-Queisser limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 25.18, '%', 2],[75.0, 26.05, '%', 2],[58.0, 85.42, '%', 2],[3.0, 98.3, 'per', 0]

F
###Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks###
(64498, 64498)
 Here, we utilise a 4-source vacuumdeposition method to deposit FA0.7 Cs0.3Pb(Ix<missing VAR>Br1-x)3perovskite, where the bandgap is widened through fine control over the halidecontent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 26.4, '%', 2],[133.0, 17.8, '%', 1],[158.0, 1.76, 'eV', 1],[262.0, 2.06, 'V', 2],[266.0, 24.1, '%', 2]

Pb
###Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks###
(64504, 64504)
 Here, we utilise a 4-source vacuumdeposition method to deposit FA0.7 Cs0.3Pb(Ix<missing VAR>Br1-x)3perovskite, where the bandgap is widened through fine control over the halidecontent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 26.4, '%', 2],[127.0, 17.8, '%', 1],[152.0, 1.76, 'eV', 1],[256.0, 2.06, 'V', 2],[260.0, 24.1, '%', 2]

I
###Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks###
(64506, 64506)
 Here, we utilise a 4-source vacuumdeposition method to deposit FA0.7 Cs0.3Pb(Ix<missing VAR>Br1-x)3perovskite, where the bandgap is widened through fine control over the halidecontent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 26.4, '%', 2],[125.0, 17.8, '%', 1],[150.0, 1.76, 'eV', 1],[254.0, 2.06, 'V', 2],[258.0, 24.1, '%', 2]

O
###Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks###
(64562, 64562)
 We show how the combined use of a MeO-2PACz self-assembled monolayeras hole transporting material and passivation of the perovskite absorber withethylenediammonium diiodide reduces non-radiative losses, with thisdual-interface treatment resulting in efficiencies of 17.8% in solar cellsbased on vacuum deposited perovskites with bandgap of 1.76 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 26.4, '%', 3],[69.0, 17.8, '%', 0],[94.0, 1.76, 'eV', 0],[198.0, 2.06, 'V', 1],[202.0, 24.1, '%', 1]

P
###Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks###
(64565, 64565)
 We show how the combined use of a MeO-2PACz self-assembled monolayeras hole transporting material and passivation of the perovskite absorber withethylenediammonium diiodide reduces non-radiative losses, with thisdual-interface treatment resulting in efficiencies of 17.8% in solar cellsbased on vacuum deposited perovskites with bandgap of 1.76 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 26.4, '%', 3],[66.0, 17.8, '%', 0],[91.0, 1.76, 'eV', 0],[195.0, 2.06, 'V', 1],[199.0, 24.1, '%', 1]

F
###Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks###
(64672, 64672)
 By similarlypassivating a narrow bandgap FA0.75Cs0.25Pb0.5Sn0.5I3perovskite and combining it with sub-cells of evaporatedFA0.7Cs0.3Pb(I0.64Br0.36)3, we report a 2-terminalall-perovskite tandem solar cell with champion open circuit voltage and powerconversion efficiency of 2.06 V and 24.1%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 26.4, '%', 4],[41.0, 17.8, '%', 1],[16.0, 1.76, 'eV', 1],[88.0, 2.06, 'V', 0],[92.0, 24.1, '%', 0]

Cs0.25Pb0.5Sn0.5I3
###Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks###
(64675, 64682)
 By similarlypassivating a narrow bandgap FA0.75Cs0.25Pb0.5Sn0.5I3perovskite and combining it with sub-cells of evaporatedFA0.7Cs0.3Pb(I0.64Br0.36)3, we report a 2-terminalall-perovskite tandem solar cell with champion open circuit voltage and powerconversion efficiency of 2.06 V and 24.1%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0.7058823529411765,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 26.4, '%', 4],[44.0, 17.8, '%', 1],[19.0, 1.76, 'eV', 1],[78.0, 2.06, 'V', 0],[82.0, 24.1, '%', 0]

F
###Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks###
(64704, 64704)
 By similarlypassivating a narrow bandgap FA0.75Cs0.25Pb0.5Sn0.5I3perovskite and combining it with sub-cells of evaporatedFA0.7Cs0.3Pb(I0.64Br0.36)3, we report a 2-terminalall-perovskite tandem solar cell with champion open circuit voltage and powerconversion efficiency of 2.06 V and 24.1%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 26.4, '%', 4],[73.0, 17.8, '%', 1],[48.0, 1.76, 'eV', 1],[56.0, 2.06, 'V', 0],[60.0, 24.1, '%', 0]

Cs0.3Pb(I0.64Br0.36)3
###Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite|Yu-Hsien Chiang,Kyle Frohna,Hayden Salway,Anna Abfalterer,Bart Roose,Miguel Anaya,Samuel D. Stranks###
(64707, 64716)
 By similarlypassivating a narrow bandgap FA0.75Cs0.25Pb0.5Sn0.5I3perovskite and combining it with sub-cells of evaporatedFA0.7Cs0.3Pb(I0.64Br0.36)3, we report a 2-terminalall-perovskite tandem solar cell with champion open circuit voltage and powerconversion efficiency of 2.06 V and 24.1%, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25116279069767444,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.44651162790697674,0,0.06976744186046512,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23255813953488372,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 26.4, '%', 4],[76.0, 17.8, '%', 1],[51.0, 1.76, 'eV', 1],[44.0, 2.06, 'V', 0],[48.0, 24.1, '%', 0]

In
###Thermodynamic performance of hot-carrier solar cells: A quantum transport model|Ludovico Tesser,Robert S. Whitney,Janine Splettstoesser###
(64864, 64864)
 In conventional solar cells, photogenerated carriers lose part of theirenergy before they can be extracted to make electricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Thermodynamic performance of hot-carrier solar cells: A quantum transport model|Ludovico Tesser,Robert S. Whitney,Janine Splettstoesser###
(65060, 65060)
We propose a quantum transport model in which each energy-loss process (carrierthermalization, relaxation, and recombination) is simulated by a Buttikerprobe.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaInP/GaAs/GaInAs
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65242, 65251)
Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[401.0, 93, '%', 4],[418.0, 410, 'mV', 4],[421.0, 1, 'sun', 4],[518.0, 40, '%', 6],[522.0, 500, 'suns', 6]

Zn
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65271, 65271)
Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 93, '%', 4],[398.0, 410, 'mV', 4],[401.0, 1, 'sun', 4],[498.0, 40, '%', 6],[502.0, 500, 'suns', 6]

Zn
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65321, 65321)
 The growth of heavily doped tunnel junctions in inverted metamorphicmultijunction solar cells induces a strong diffusion of Zn via apoint-defects-assisted mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 93, '%', 3],[348.0, 410, 'mV', 3],[351.0, 1, 'sun', 3],[448.0, 40, '%', 5],[452.0, 500, 'suns', 5]

Zn
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65343, 65343)
 The redistribution of Zn can compensate then<missing VAR>-type doping in the emitter of the GaInP top junction, degrading severely theconductivity of the whole solar cell and its conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 93, '%', 2],[326.0, 410, 'mV', 2],[329.0, 1, 'sun', 2],[426.0, 40, '%', 4],[430.0, 500, 'suns', 4]

GaInP
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65368, 65370)
 The redistribution of Zn can compensate then<missing VAR>-type doping in the emitter of the GaInP top junction, degrading severely theconductivity of the whole solar cell and its conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 93, '%', 2],[299.0, 410, 'mV', 2],[302.0, 1, 'sun', 2],[399.0, 40, '%', 4],[403.0, 500, 'suns', 4]

Zn
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65430, 65430)
 This workevaluates different epitaxial growth strategies to achieve control on the Znprofile of an inverted metamorphic triple-junction structure, including thereduction of the doping concentration in the tunnel junction to minimize theinjection of point defects that trigger the diffusion mechanism; the use ofdifferent barrier layers to keep the injected point defects away from activelayers and, finally, the minimization of Zn concentration in the AlGaInPback-surface-field layer of the GaInP subcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 93, '%', 1],[239.0, 410, 'mV', 1],[242.0, 1, 'sun', 1],[339.0, 40, '%', 3],[343.0, 500, 'suns', 3]

Zn
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65545, 65545)
 This workevaluates different epitaxial growth strategies to achieve control on the Znprofile of an inverted metamorphic triple-junction structure, including thereduction of the doping concentration in the tunnel junction to minimize theinjection of point defects that trigger the diffusion mechanism; the use ofdifferent barrier layers to keep the injected point defects away from activelayers and, finally, the minimization of Zn concentration in the AlGaInPback-surface-field layer of the GaInP subcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 93, '%', 1],[124.0, 410, 'mV', 1],[127.0, 1, 'sun', 1],[224.0, 40, '%', 3],[228.0, 500, 'suns', 3]

AlGaInP
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65553, 65556)
 This workevaluates different epitaxial growth strategies to achieve control on the Znprofile of an inverted metamorphic triple-junction structure, including thereduction of the doping concentration in the tunnel junction to minimize theinjection of point defects that trigger the diffusion mechanism; the use ofdifferent barrier layers to keep the injected point defects away from activelayers and, finally, the minimization of Zn concentration in the AlGaInPback-surface-field layer of the GaInP subcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 93, '%', 1],[113.0, 410, 'mV', 1],[116.0, 1, 'sun', 1],[213.0, 40, '%', 3],[217.0, 500, 'suns', 3]

GaInP
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65571, 65573)
 This workevaluates different epitaxial growth strategies to achieve control on the Znprofile of an inverted metamorphic triple-junction structure, including thereduction of the doping concentration in the tunnel junction to minimize theinjection of point defects that trigger the diffusion mechanism; the use ofdifferent barrier layers to keep the injected point defects away from activelayers and, finally, the minimization of Zn concentration in the AlGaInPback-surface-field layer of the GaInP subcell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 93, '%', 1],[96.0, 410, 'mV', 1],[99.0, 1, 'sun', 1],[196.0, 40, '%', 3],[200.0, 500, 'suns', 3]

GaInP
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65630, 65632)
 This last approach enables ahigh-conductivity multijunction solar cell device without redesigning thetunnel junction as well as a high electronic quality in the GaInP subcell,which shows a collection efficiency higher than 93% and an open-circuit-voltageoffset of 410 mV at 1 sun irradiance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 93, '%', 0],[37.0, 410, 'mV', 0],[40.0, 1, 'sun', 0],[137.0, 40, '%', 2],[141.0, 500, 'suns', 2]

AlGaInPZn
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65793, 65797)
 Thisway, final solar cells with peak efficiencies exceeding 40% at 500 suns aredemonstrated, despite using doping levels in the AlGaInPZn back-surface-fieldof the GaInP subcell and using non-optimized antireflective coatings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 93, '%', 2],[124.0, 410, 'mV', 2],[121.0, 1, 'sun', 2],[24.0, 40, '%', 0],[20.0, 500, 'suns', 0]

GaInP
###Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell|Manuel Hinojosa,Ivan Lombardero,Carlos Algora,Ivan Garcia###
(65810, 65812)
 Thisway, final solar cells with peak efficiencies exceeding 40% at 500 suns aredemonstrated, despite using doping levels in the AlGaInPZn back-surface-fieldof the GaInP subcell and using non-optimized antireflective coatings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 93, '%', 2],[141.0, 410, 'mV', 2],[138.0, 1, 'sun', 2],[41.0, 40, '%', 0],[37.0, 500, 'suns', 0]

Cu2Zn
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65855, 65857)
Opto-electronic properties and solar cell efficiency modelling of Cu2ZnX<missing VAR>S4 (X<missing VAR>Sn,Ge,Si) kesterites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1.32, ',', 2],[139.0, 1.89, 'and', 2],[140.0, 3.06, 'eV', 2],[407.0, 25.88, ',', 7],[409.0, 19.94, 'and', 7],[411.0, 3.11, '%', 7],[491.0, 15.88, ',', 8],[493.0, 14.98, 'and', 8],[495.0, 2.66, '%', 8],[590.0, 10, '%', 9]

S4
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65859, 65860)
Opto-electronic properties and solar cell efficiency modelling of Cu2ZnX<missing VAR>S4 (X<missing VAR>Sn,Ge,Si) kesterites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1.32, ',', 2],[136.0, 1.89, 'and', 2],[137.0, 3.06, 'eV', 2],[404.0, 25.88, ',', 7],[406.0, 19.94, 'and', 7],[408.0, 3.11, '%', 7],[488.0, 15.88, ',', 8],[490.0, 14.98, 'and', 8],[492.0, 2.66, '%', 8],[587.0, 10, '%', 9]

Sn
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65864, 65864)
Opto-electronic properties and solar cell efficiency modelling of Cu2ZnX<missing VAR>S4 (X<missing VAR>Sn,Ge,Si) kesterites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1.32, ',', 2],[132.0, 1.89, 'and', 2],[133.0, 3.06, 'eV', 2],[400.0, 25.88, ',', 7],[402.0, 19.94, 'and', 7],[404.0, 3.11, '%', 7],[484.0, 15.88, ',', 8],[486.0, 14.98, 'and', 8],[488.0, 2.66, '%', 8],[583.0, 10, '%', 9]

Ge
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65866, 65866)
Opto-electronic properties and solar cell efficiency modelling of Cu2ZnX<missing VAR>S4 (X<missing VAR>Sn,Ge,Si) kesterites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.32, ',', 2],[130.0, 1.89, 'and', 2],[131.0, 3.06, 'eV', 2],[398.0, 25.88, ',', 7],[400.0, 19.94, 'and', 7],[402.0, 3.11, '%', 7],[482.0, 15.88, ',', 8],[484.0, 14.98, 'and', 8],[486.0, 2.66, '%', 8],[581.0, 10, '%', 9]

Si
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65868, 65868)
Opto-electronic properties and solar cell efficiency modelling of Cu2ZnX<missing VAR>S4 (X<missing VAR>Sn,Ge,Si) kesterites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1.32, ',', 2],[128.0, 1.89, 'and', 2],[129.0, 3.06, 'eV', 2],[396.0, 25.88, ',', 7],[398.0, 19.94, 'and', 7],[400.0, 3.11, '%', 7],[480.0, 15.88, ',', 8],[482.0, 14.98, 'and', 8],[484.0, 2.66, '%', 8],[579.0, 10, '%', 9]

In
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65874, 65874)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 1.32, ',', 1],[122.0, 1.89, 'and', 1],[123.0, 3.06, 'eV', 1],[390.0, 25.88, ',', 6],[392.0, 19.94, 'and', 6],[394.0, 3.11, '%', 6],[474.0, 15.88, ',', 7],[476.0, 14.98, 'and', 7],[478.0, 2.66, '%', 7],[573.0, 10, '%', 8]

Cu2ZnSnS4
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65889, 65894)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1.32, ',', 1],[102.0, 1.89, 'and', 1],[103.0, 3.06, 'eV', 1],[370.0, 25.88, ',', 6],[372.0, 19.94, 'and', 6],[374.0, 3.11, '%', 6],[454.0, 15.88, ',', 7],[456.0, 14.98, 'and', 7],[458.0, 2.66, '%', 7],[553.0, 10, '%', 8]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65897, 65897)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1.32, ',', 1],[99.0, 1.89, 'and', 1],[100.0, 3.06, 'eV', 1],[367.0, 25.88, ',', 6],[369.0, 19.94, 'and', 6],[371.0, 3.11, '%', 6],[451.0, 15.88, ',', 7],[453.0, 14.98, 'and', 7],[455.0, 2.66, '%', 7],[550.0, 10, '%', 8]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65900, 65900)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 1.32, ',', 1],[96.0, 1.89, 'and', 1],[97.0, 3.06, 'eV', 1],[364.0, 25.88, ',', 6],[366.0, 19.94, 'and', 6],[368.0, 3.11, '%', 6],[448.0, 15.88, ',', 7],[450.0, 14.98, 'and', 7],[452.0, 2.66, '%', 7],[547.0, 10, '%', 8]

Cu2ZnGeS4
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65905, 65910)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1.32, ',', 1],[86.0, 1.89, 'and', 1],[87.0, 3.06, 'eV', 1],[354.0, 25.88, ',', 6],[356.0, 19.94, 'and', 6],[358.0, 3.11, '%', 6],[438.0, 15.88, ',', 7],[440.0, 14.98, 'and', 7],[442.0, 2.66, '%', 7],[537.0, 10, '%', 8]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65913, 65913)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.32, ',', 1],[83.0, 1.89, 'and', 1],[84.0, 3.06, 'eV', 1],[351.0, 25.88, ',', 6],[353.0, 19.94, 'and', 6],[355.0, 3.11, '%', 6],[435.0, 15.88, ',', 7],[437.0, 14.98, 'and', 7],[439.0, 2.66, '%', 7],[534.0, 10, '%', 8]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65916, 65916)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1.32, ',', 1],[80.0, 1.89, 'and', 1],[81.0, 3.06, 'eV', 1],[348.0, 25.88, ',', 6],[350.0, 19.94, 'and', 6],[352.0, 3.11, '%', 6],[432.0, 15.88, ',', 7],[434.0, 14.98, 'and', 7],[436.0, 2.66, '%', 7],[531.0, 10, '%', 8]

Cu2ZnSiS4
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65921, 65926)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.32, ',', 1],[70.0, 1.89, 'and', 1],[71.0, 3.06, 'eV', 1],[338.0, 25.88, ',', 6],[340.0, 19.94, 'and', 6],[342.0, 3.11, '%', 6],[422.0, 15.88, ',', 7],[424.0, 14.98, 'and', 7],[426.0, 2.66, '%', 7],[521.0, 10, '%', 8]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65929, 65929)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 1.32, ',', 1],[67.0, 1.89, 'and', 1],[68.0, 3.06, 'eV', 1],[335.0, 25.88, ',', 6],[337.0, 19.94, 'and', 6],[339.0, 3.11, '%', 6],[419.0, 15.88, ',', 7],[421.0, 14.98, 'and', 7],[423.0, 2.66, '%', 7],[518.0, 10, '%', 8]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(65932, 65932)
 In this work, first principle calculations of Cu2ZnSnS4 (CZTS),Cu2ZnGeS4 (CZGS) and Cu2ZnSiS4 (CZ<missing VAR>SS) are performed to highlightthe impact of the cationic substitution on the structural, electronic andoptical properties of kesterite compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1.32, ',', 1],[64.0, 1.89, 'and', 1],[65.0, 3.06, 'eV', 1],[332.0, 25.88, ',', 6],[334.0, 19.94, 'and', 6],[336.0, 3.11, '%', 6],[416.0, 15.88, ',', 7],[418.0, 14.98, 'and', 7],[420.0, 2.66, '%', 7],[515.0, 10, '%', 8]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66003, 66003)
 Direct bandgaps are reported withvalues of 1.32, 1.89 and 3.06 eV respectively for CZTS, CZGS and CZ<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1.32, ',', 0],[7.0, 1.89, 'and', 0],[6.0, 3.06, 'eV', 0],[261.0, 25.88, ',', 5],[263.0, 19.94, 'and', 5],[265.0, 3.11, '%', 5],[345.0, 15.88, ',', 6],[347.0, 14.98, 'and', 6],[349.0, 2.66, '%', 6],[444.0, 10, '%', 7]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66006, 66006)
 Direct bandgaps are reported withvalues of 1.32, 1.89 and 3.06 eV respectively for CZTS, CZGS and CZ<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.32, ',', 0],[10.0, 1.89, 'and', 0],[9.0, 3.06, 'eV', 0],[258.0, 25.88, ',', 5],[260.0, 19.94, 'and', 5],[262.0, 3.11, '%', 5],[342.0, 15.88, ',', 6],[344.0, 14.98, 'and', 6],[346.0, 2.66, '%', 6],[441.0, 10, '%', 7]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66009, 66009)
 Direct bandgaps are reported withvalues of 1.32, 1.89 and 3.06 eV respectively for CZTS, CZGS and CZ<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1.32, ',', 0],[13.0, 1.89, 'and', 0],[12.0, 3.06, 'eV', 0],[255.0, 25.88, ',', 5],[257.0, 19.94, 'and', 5],[259.0, 3.11, '%', 5],[339.0, 15.88, ',', 6],[341.0, 14.98, 'and', 6],[343.0, 2.66, '%', 6],[438.0, 10, '%', 7]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66012, 66012)
 Direct bandgaps are reported withvalues of 1.32, 1.89 and 3.06 eV respectively for CZTS, CZGS and CZ<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1.32, ',', 0],[16.0, 1.89, 'and', 0],[15.0, 3.06, 'eV', 0],[252.0, 25.88, ',', 5],[254.0, 19.94, 'and', 5],[256.0, 3.11, '%', 5],[336.0, 15.88, ',', 6],[338.0, 14.98, 'and', 6],[340.0, 2.66, '%', 6],[435.0, 10, '%', 7]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66016, 66016)
 Direct bandgaps are reported withvalues of 1.32, 1.89 and 3.06 eV respectively for CZTS, CZGS and CZ<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1.32, ',', 0],[20.0, 1.89, 'and', 0],[19.0, 3.06, 'eV', 0],[248.0, 25.88, ',', 5],[250.0, 19.94, 'and', 5],[252.0, 3.11, '%', 5],[332.0, 15.88, ',', 6],[334.0, 14.98, 'and', 6],[336.0, 2.66, '%', 6],[431.0, 10, '%', 7]

SS
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66018, 66019)
 Direct bandgaps are reported withvalues of 1.32, 1.89 and 3.06 eV respectively for CZTS, CZGS and CZ<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1.32, ',', 0],[22.0, 1.89, 'and', 0],[21.0, 3.06, 'eV', 0],[245.0, 25.88, ',', 5],[247.0, 19.94, 'and', 5],[249.0, 3.11, '%', 5],[329.0, 15.88, ',', 6],[331.0, 14.98, 'and', 6],[333.0, 2.66, '%', 6],[428.0, 10, '%', 7]

In
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66022, 66022)
 Inaddition, absorption coefficient values of the order of 104 cm-1 areobtained, indicating the applicability of these materials as absorber layer forsolar cell applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1.32, ',', 1],[26.0, 1.89, 'and', 1],[25.0, 3.06, 'eV', 1],[242.0, 25.88, ',', 4],[244.0, 19.94, 'and', 4],[246.0, 3.11, '%', 4],[326.0, 15.88, ',', 5],[328.0, 14.98, 'and', 5],[330.0, 2.66, '%', 5],[425.0, 10, '%', 6]

In
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66083, 66083)
 In the second part of this study, ab initio resultsare used as input data to model the electrical power conversion efficiency ofkesterite-based solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1.32, ',', 2],[87.0, 1.89, 'and', 2],[86.0, 3.06, 'eV', 2],[181.0, 25.88, ',', 3],[183.0, 19.94, 'and', 3],[185.0, 3.11, '%', 3],[265.0, 15.88, ',', 4],[267.0, 14.98, 'and', 4],[269.0, 2.66, '%', 4],[364.0, 10, '%', 5]

In
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66141, 66141)
 In that perspective, we used an improved version ofthe Shockley-Queisser theoretical model including non-radiative recombinationvia an external parameter defined as the internal quantum efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1.32, ',', 3],[145.0, 1.89, 'and', 3],[144.0, 3.06, 'eV', 3],[123.0, 25.88, ',', 2],[125.0, 19.94, 'and', 2],[127.0, 3.11, '%', 2],[207.0, 15.88, ',', 3],[209.0, 14.98, 'and', 3],[211.0, 2.66, '%', 3],[306.0, 10, '%', 4]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66280, 66280)
 Maximal efficiencies of 25.88, 19.94 and 3.11% are reported respectivelyfor CZTS, CZGS and CZ<missing VAR>SS for vanishing non-radiative recombination rate.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 1.32, ',', 5],[284.0, 1.89, 'and', 5],[283.0, 3.06, 'eV', 5],[16.0, 25.88, ',', 0],[14.0, 19.94, 'and', 0],[12.0, 3.11, '%', 0],[68.0, 15.88, ',', 1],[70.0, 14.98, 'and', 1],[72.0, 2.66, '%', 1],[167.0, 10, '%', 2]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66283, 66283)
 Maximal efficiencies of 25.88, 19.94 and 3.11% are reported respectivelyfor CZTS, CZGS and CZ<missing VAR>SS for vanishing non-radiative recombination rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 1.32, ',', 5],[287.0, 1.89, 'and', 5],[286.0, 3.06, 'eV', 5],[19.0, 25.88, ',', 0],[17.0, 19.94, 'and', 0],[15.0, 3.11, '%', 0],[65.0, 15.88, ',', 1],[67.0, 14.98, 'and', 1],[69.0, 2.66, '%', 1],[164.0, 10, '%', 2]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66286, 66286)
 Maximal efficiencies of 25.88, 19.94 and 3.11% are reported respectivelyfor CZTS, CZGS and CZ<missing VAR>SS for vanishing non-radiative recombination rate.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 1.32, ',', 5],[290.0, 1.89, 'and', 5],[289.0, 3.06, 'eV', 5],[22.0, 25.88, ',', 0],[20.0, 19.94, 'and', 0],[18.0, 3.11, '%', 0],[62.0, 15.88, ',', 1],[64.0, 14.98, 'and', 1],[66.0, 2.66, '%', 1],[161.0, 10, '%', 2]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66289, 66289)
 Maximal efficiencies of 25.88, 19.94 and 3.11% are reported respectivelyfor CZTS, CZGS and CZ<missing VAR>SS for vanishing non-radiative recombination rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 1.32, ',', 5],[293.0, 1.89, 'and', 5],[292.0, 3.06, 'eV', 5],[25.0, 25.88, ',', 0],[23.0, 19.94, 'and', 0],[21.0, 3.11, '%', 0],[59.0, 15.88, ',', 1],[61.0, 14.98, 'and', 1],[63.0, 2.66, '%', 1],[158.0, 10, '%', 2]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66293, 66293)
 Maximal efficiencies of 25.88, 19.94 and 3.11% are reported respectivelyfor CZTS, CZGS and CZ<missing VAR>SS for vanishing non-radiative recombination rate.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 1.32, ',', 5],[297.0, 1.89, 'and', 5],[296.0, 3.06, 'eV', 5],[29.0, 25.88, ',', 0],[27.0, 19.94, 'and', 0],[25.0, 3.11, '%', 0],[55.0, 15.88, ',', 1],[57.0, 14.98, 'and', 1],[59.0, 2.66, '%', 1],[154.0, 10, '%', 2]

SS
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66295, 66296)
 Maximal efficiencies of 25.88, 19.94 and 3.11% are reported respectivelyfor CZTS, CZGS and CZ<missing VAR>SS for vanishing non-radiative recombination rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 1.32, ',', 5],[299.0, 1.89, 'and', 5],[298.0, 3.06, 'eV', 5],[31.0, 25.88, ',', 0],[29.0, 19.94, 'and', 0],[27.0, 3.11, '%', 0],[52.0, 15.88, ',', 1],[54.0, 14.98, 'and', 1],[56.0, 2.66, '%', 1],[151.0, 10, '%', 2]

VOC
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66324, 66326)
 Usingan internal quantum efficiency providing VOC values comparable toexperimental measurements, solar cell efficiencies of 15.88, 14.98 and 2.66%are reported respectively for CZTS, CZGS and CZ<missing VAR>SS (for an optimal thickness of1.15 mum).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 1.32, ',', 6],[328.0, 1.89, 'and', 6],[327.0, 3.06, 'eV', 6],[60.0, 25.88, ',', 1],[58.0, 19.94, 'and', 1],[56.0, 3.11, '%', 1],[22.0, 15.88, ',', 0],[24.0, 14.98, 'and', 0],[26.0, 2.66, '%', 0],[121.0, 10, '%', 1]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66364, 66364)
 Usingan internal quantum efficiency providing VOC values comparable toexperimental measurements, solar cell efficiencies of 15.88, 14.98 and 2.66%are reported respectively for CZTS, CZGS and CZ<missing VAR>SS (for an optimal thickness of1.15 mum).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 1.32, ',', 6],[368.0, 1.89, 'and', 6],[367.0, 3.06, 'eV', 6],[100.0, 25.88, ',', 1],[98.0, 19.94, 'and', 1],[96.0, 3.11, '%', 1],[16.0, 15.88, ',', 0],[14.0, 14.98, 'and', 0],[12.0, 2.66, '%', 0],[83.0, 10, '%', 1]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66367, 66367)
 Usingan internal quantum efficiency providing VOC values comparable toexperimental measurements, solar cell efficiencies of 15.88, 14.98 and 2.66%are reported respectively for CZTS, CZGS and CZ<missing VAR>SS (for an optimal thickness of1.15 mum).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 1.32, ',', 6],[371.0, 1.89, 'and', 6],[370.0, 3.06, 'eV', 6],[103.0, 25.88, ',', 1],[101.0, 19.94, 'and', 1],[99.0, 3.11, '%', 1],[19.0, 15.88, ',', 0],[17.0, 14.98, 'and', 0],[15.0, 2.66, '%', 0],[80.0, 10, '%', 1]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66370, 66370)
 Usingan internal quantum efficiency providing VOC values comparable toexperimental measurements, solar cell efficiencies of 15.88, 14.98 and 2.66%are reported respectively for CZTS, CZGS and CZ<missing VAR>SS (for an optimal thickness of1.15 mum).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 1.32, ',', 6],[374.0, 1.89, 'and', 6],[373.0, 3.06, 'eV', 6],[106.0, 25.88, ',', 1],[104.0, 19.94, 'and', 1],[102.0, 3.11, '%', 1],[22.0, 15.88, ',', 0],[20.0, 14.98, 'and', 0],[18.0, 2.66, '%', 0],[77.0, 10, '%', 1]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66373, 66373)
 Usingan internal quantum efficiency providing VOC values comparable toexperimental measurements, solar cell efficiencies of 15.88, 14.98 and 2.66%are reported respectively for CZTS, CZGS and CZ<missing VAR>SS (for an optimal thickness of1.15 mum).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 1.32, ',', 6],[377.0, 1.89, 'and', 6],[376.0, 3.06, 'eV', 6],[109.0, 25.88, ',', 1],[107.0, 19.94, 'and', 1],[105.0, 3.11, '%', 1],[25.0, 15.88, ',', 0],[23.0, 14.98, 'and', 0],[21.0, 2.66, '%', 0],[74.0, 10, '%', 1]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66377, 66377)
 Usingan internal quantum efficiency providing VOC values comparable toexperimental measurements, solar cell efficiencies of 15.88, 14.98 and 2.66%are reported respectively for CZTS, CZGS and CZ<missing VAR>SS (for an optimal thickness of1.15 mum).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 1.32, ',', 6],[381.0, 1.89, 'and', 6],[380.0, 3.06, 'eV', 6],[113.0, 25.88, ',', 1],[111.0, 19.94, 'and', 1],[109.0, 3.11, '%', 1],[29.0, 15.88, ',', 0],[27.0, 14.98, 'and', 0],[25.0, 2.66, '%', 0],[70.0, 10, '%', 1]

SS
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66379, 66380)
 Usingan internal quantum efficiency providing VOC values comparable toexperimental measurements, solar cell efficiencies of 15.88, 14.98 and 2.66%are reported respectively for CZTS, CZGS and CZ<missing VAR>SS (for an optimal thickness of1.15 mum).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 1.32, ',', 6],[383.0, 1.89, 'and', 6],[382.0, 3.06, 'eV', 6],[115.0, 25.88, ',', 1],[113.0, 19.94, 'and', 1],[111.0, 3.11, '%', 1],[31.0, 15.88, ',', 0],[29.0, 14.98, 'and', 0],[27.0, 2.66, '%', 0],[67.0, 10, '%', 1]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66418, 66418)
 With this methodology, we confirm the suitability of CZTS insingle junction solar cells, with a possible efficiency improvement of 10%enabled through the reduction of the non-radiative recombination rate.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[424.0, 1.32, ',', 7],[422.0, 1.89, 'and', 7],[421.0, 3.06, 'eV', 7],[154.0, 25.88, ',', 2],[152.0, 19.94, 'and', 2],[150.0, 3.11, '%', 2],[70.0, 15.88, ',', 1],[68.0, 14.98, 'and', 1],[66.0, 2.66, '%', 1],[29.0, 10, '%', 0]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66421, 66421)
 With this methodology, we confirm the suitability of CZTS insingle junction solar cells, with a possible efficiency improvement of 10%enabled through the reduction of the non-radiative recombination rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[427.0, 1.32, ',', 7],[425.0, 1.89, 'and', 7],[424.0, 3.06, 'eV', 7],[157.0, 25.88, ',', 2],[155.0, 19.94, 'and', 2],[153.0, 3.11, '%', 2],[73.0, 15.88, ',', 1],[71.0, 14.98, 'and', 1],[69.0, 2.66, '%', 1],[26.0, 10, '%', 0]

In
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66472, 66472)
 Inaddition, CZGS appears to be an interesting candidate as top cell absorberlayer for tandem approaches whereas CZ<missing VAR>SS might be interesting for transparentPV windows.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[478.0, 1.32, ',', 8],[476.0, 1.89, 'and', 8],[475.0, 3.06, 'eV', 8],[208.0, 25.88, ',', 3],[206.0, 19.94, 'and', 3],[204.0, 3.11, '%', 3],[124.0, 15.88, ',', 2],[122.0, 14.98, 'and', 2],[120.0, 2.66, '%', 2],[25.0, 10, '%', 1]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66478, 66478)
 Inaddition, CZGS appears to be an interesting candidate as top cell absorberlayer for tandem approaches whereas CZ<missing VAR>SS might be interesting for transparentPV windows.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[484.0, 1.32, ',', 8],[482.0, 1.89, 'and', 8],[481.0, 3.06, 'eV', 8],[214.0, 25.88, ',', 3],[212.0, 19.94, 'and', 3],[210.0, 3.11, '%', 3],[130.0, 15.88, ',', 2],[128.0, 14.98, 'and', 2],[126.0, 2.66, '%', 2],[31.0, 10, '%', 1]

S
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66481, 66481)
 Inaddition, CZGS appears to be an interesting candidate as top cell absorberlayer for tandem approaches whereas CZ<missing VAR>SS might be interesting for transparentPV windows.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[487.0, 1.32, ',', 8],[485.0, 1.89, 'and', 8],[484.0, 3.06, 'eV', 8],[217.0, 25.88, ',', 3],[215.0, 19.94, 'and', 3],[213.0, 3.11, '%', 3],[133.0, 15.88, ',', 2],[131.0, 14.98, 'and', 2],[129.0, 2.66, '%', 2],[34.0, 10, '%', 1]

C
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66514, 66514)
 Inaddition, CZGS appears to be an interesting candidate as top cell absorberlayer for tandem approaches whereas CZ<missing VAR>SS might be interesting for transparentPV windows.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[520.0, 1.32, ',', 8],[518.0, 1.89, 'and', 8],[517.0, 3.06, 'eV', 8],[250.0, 25.88, ',', 3],[248.0, 19.94, 'and', 3],[246.0, 3.11, '%', 3],[166.0, 15.88, ',', 2],[164.0, 14.98, 'and', 2],[162.0, 2.66, '%', 2],[67.0, 10, '%', 1]

SS
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66516, 66517)
 Inaddition, CZGS appears to be an interesting candidate as top cell absorberlayer for tandem approaches whereas CZ<missing VAR>SS might be interesting for transparentPV windows.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[522.0, 1.32, ',', 8],[520.0, 1.89, 'and', 8],[519.0, 3.06, 'eV', 8],[252.0, 25.88, ',', 3],[250.0, 19.94, 'and', 3],[248.0, 3.11, '%', 3],[168.0, 15.88, ',', 2],[166.0, 14.98, 'and', 2],[164.0, 2.66, '%', 2],[69.0, 10, '%', 1]

PV
###Opto-electronic properties and solar cell efficiency modelling of Cu$_2$ZnXS$_4$ (X=Sn,Ge,Si) kesterites|Thomas Ratz,Jean-Yves Raty,Guy Brammertz,Bart Vermang,Ngoc Duy Nguyen###
(66530, 66531)
 Inaddition, CZGS appears to be an interesting candidate as top cell absorberlayer for tandem approaches whereas CZ<missing VAR>SS might be interesting for transparentPV windows.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[536.0, 1.32, ',', 8],[534.0, 1.89, 'and', 8],[533.0, 3.06, 'eV', 8],[266.0, 25.88, ',', 3],[264.0, 19.94, 'and', 3],[262.0, 3.11, '%', 3],[182.0, 15.88, ',', 2],[180.0, 14.98, 'and', 2],[178.0, 2.66, '%', 2],[83.0, 10, '%', 1]

P
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66578, 66578)
 The P+ alpha-Si /N+ polycrystalline solar cell is molded using the AM<missing VAR>PS-1D<missing VAR>device simulator to explore the new high efficiency thin film poly-siliconsolar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 752, 'mV', 4],[293.0, 9.44, '%', 4]

Si
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66583, 66583)
 The P+ alpha-Si /N+ polycrystalline solar cell is molded using the AM<missing VAR>PS-1D<missing VAR>device simulator to explore the new high efficiency thin film poly-siliconsolar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 752, 'mV', 4],[288.0, 9.44, '%', 4]

N
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66586, 66586)
 The P+ alpha-Si /N+ polycrystalline solar cell is molded using the AM<missing VAR>PS-1D<missing VAR>device simulator to explore the new high efficiency thin film poly-siliconsolar cell.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 752, 'mV', 4],[285.0, 9.44, '%', 4]

PS
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66605, 66606)
 The P+ alpha-Si /N+ polycrystalline solar cell is molded using the AM<missing VAR>PS-1D<missing VAR>device simulator to explore the new high efficiency thin film poly-siliconsolar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 752, 'mV', 4],[265.0, 9.44, '%', 4]

In
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66642, 66642)
 In order to analyze the characteristics of this device and thethickness of N+ poly-silicon, we consider the impurity concentration in the N+poly-silicon layer and the work function of transparent conductive oxide (T<missing VAR>CO)in front contact in the calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 752, 'mV', 3],[229.0, 9.44, '%', 3]

N
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66669, 66669)
 In order to analyze the characteristics of this device and thethickness of N+ poly-silicon, we consider the impurity concentration in the N+poly-silicon layer and the work function of transparent conductive oxide (T<missing VAR>CO)in front contact in the calculation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 752, 'mV', 3],[202.0, 9.44, '%', 3]

N
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66691, 66691)
 In order to analyze the characteristics of this device and thethickness of N+ poly-silicon, we consider the impurity concentration in the N+poly-silicon layer and the work function of transparent conductive oxide (T<missing VAR>CO)in front contact in the calculation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 752, 'mV', 3],[180.0, 9.44, '%', 3]

O
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66720, 66720)
 In order to analyze the characteristics of this device and thethickness of N+ poly-silicon, we consider the impurity concentration in the N+poly-silicon layer and the work function of transparent conductive oxide (T<missing VAR>CO)in front contact in the calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 752, 'mV', 3],[151.0, 9.44, '%', 3]

N
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66743, 66743)
 The thickness of N+ poly-silicon haslittle impact on the device when the thickness varies from 20 mum<missing VAR> to 300mum<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 752, 'mV', 2],[128.0, 9.44, '%', 2]

P
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66831, 66831)
The conclusion is drawn that the open-circuit voltage (Voc) of P+ alpha-Si/N+ polycrystalline solar cell is very high, reaching 752 mV, and theconversion efficiency reaches 9.44%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 752, 'mV', 0],[40.0, 9.44, '%', 0]

Si
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66836, 66836)
The conclusion is drawn that the open-circuit voltage (Voc) of P+ alpha-Si/N+ polycrystalline solar cell is very high, reaching 752 mV, and theconversion efficiency reaches 9.44%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 752, 'mV', 0],[35.0, 9.44, '%', 0]

N
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66840, 66840)
The conclusion is drawn that the open-circuit voltage (Voc) of P+ alpha-Si/N+ polycrystalline solar cell is very high, reaching 752 mV, and theconversion efficiency reaches 9.44%.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 752, 'mV', 0],[31.0, 9.44, '%', 0]

P
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66905, 66905)
 Therefore, based on the above optimumparameters the study on the device formed by P+ alpha-Si/N+ poly-silicon issignificant in exploring the high efficiency poly-silicon solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 752, 'mV', 1],[34.0, 9.44, '%', 1]

N
###Simulation of High Conversion Efficiency and Open-circuit Voltages Of α-si/poly-silicon Solar Cell|AQing Chen,QingYi Shao###
(66912, 66912)
 Therefore, based on the above optimumparameters the study on the device formed by P+ alpha-Si/N+ poly-silicon issignificant in exploring the high efficiency poly-silicon solar cell.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 752, 'mV', 1],[41.0, 9.44, '%', 1]

Si
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67010, 67010)
 One of the remaining obstacles to approaching the theoretical efficiencylimit of crystalline silicon (c<missing VAR>-Si) solar cells is the exceedingly highinterface recombination loss for minority carriers at the Ohmic contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 645, 'mV', 4]

In
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67047, 67047)
 Inultra-thin-film c<missing VAR>-Si solar cells, this contact recombination loss is far moresevere than for traditional thick cells due to the smaller volume and higherminority carrier concentration of the former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 645, 'mV', 3]

Si
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67058, 67058)
 Inultra-thin-film c<missing VAR>-Si solar cells, this contact recombination loss is far moresevere than for traditional thick cells due to the smaller volume and higherminority carrier concentration of the former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 645, 'mV', 3]

Si
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67153, 67153)
 This paper presents a noveldesign of an electron passing (Ohmic) contact to n<missing VAR>-type Si that ishole-blocking with significantly reduced hole recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 645, 'mV', 2]

(TiO2)
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67196, 67200)
 This contact isformed by depositing a thin titanium dioxide (TiO2) layer to form a siliconmetal-insulator-semiconductor (M<missing VAR>IS) contact.
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 645, 'mV', 1]

S
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67222, 67222)
 This contact isformed by depositing a thin titanium dioxide (TiO2) layer to form a siliconmetal-insulator-semiconductor (M<missing VAR>IS) contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 645, 'mV', 1]

Si
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67237, 67237)
 A 2 mum<missing VAR> thick Si cell with thisTiO2 M<missing VAR>IS contact achieved an open circuit voltage (Voc) of 645 mV, which is 10m<missing VAR>V higher than that of an ultra-thin cell with a metal contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 645, 'mV', 0]

TiO2
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67246, 67248)
 A 2 mum<missing VAR> thick Si cell with thisTiO2 M<missing VAR>IS contact achieved an open circuit voltage (Voc) of 645 mV, which is 10m<missing VAR>V higher than that of an ultra-thin cell with a metal contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 645, 'mV', 0]

IS
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67251, 67252)
 A 2 mum<missing VAR> thick Si cell with thisTiO2 M<missing VAR>IS contact achieved an open circuit voltage (Voc) of 645 mV, which is 10m<missing VAR>V higher than that of an ultra-thin cell with a metal contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 645, 'mV', 0]

V
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67282, 67282)
 A 2 mum<missing VAR> thick Si cell with thisTiO2 M<missing VAR>IS contact achieved an open circuit voltage (Voc) of 645 mV, which is 10m<missing VAR>V higher than that of an ultra-thin cell with a metal contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 645, 'mV', 0]

IS
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67312, 67313)
 This M<missing VAR>IScontact demonstrates a new path for ultra-thin-film c<missing VAR>-Si solar cells to achievehigh efficiencies as high as traditional thick cells, and enables thefabrication of high-efficiency c<missing VAR>-Si solar cells at a lower cost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 645, 'mV', 1]

Si
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67336, 67336)
 This M<missing VAR>IScontact demonstrates a new path for ultra-thin-film c<missing VAR>-Si solar cells to achievehigh efficiencies as high as traditional thick cells, and enables thefabrication of high-efficiency c<missing VAR>-Si solar cells at a lower cost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 645, 'mV', 1]

Si
###Titanium dioxide hole-blocking layer in ultra-thin-film crystalline silicon solar cells|Yangsen Kang,Huiyang Deng,Yusi Chen,Yijie Huo,Jieyang Jia,Li Zhao,Zain Zaidi,Kai Zang,James S. Harris###
(67381, 67381)
 This M<missing VAR>IScontact demonstrates a new path for ultra-thin-film c<missing VAR>-Si solar cells to achievehigh efficiencies as high as traditional thick cells, and enables thefabrication of high-efficiency c<missing VAR>-Si solar cells at a lower cost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 645, 'mV', 1]

In
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67486, 67486)
 In this study, high-throughput density functionaltheory (DFT) methods are used to computationally model and screen 1845 halideperovskites in search of new materials without these limitations that arepromising for solar cell applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1845, 'halide', 0],[191.0, 22.7, '%', 2],[283.0, 15, 'materials', 4],[304.0, 13, 'of', 4]

Si
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67626, 67626)
 This study focuses on finding materialsthat are comprised of nontoxic elements, stable in a humid operatingenvironment, and have an optimal bandgap for one of single junction, tandemSi-perovskite, or quantum dot-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 1845, 'halide', 1],[51.0, 22.7, '%', 1],[143.0, 15, 'materials', 3],[164.0, 13, 'of', 3]

(PV)
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67667, 67670)
 Single junction materials arealso screened on predicted single junction photovoltaic (PV) efficienciesexceeding 22.7%, which is the current highest reported PV efficiency for halideperovskites.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 1845, 'halide', 2],[7.0, 22.7, '%', 0],[99.0, 15, 'materials', 2],[120.0, 13, 'of', 2]

PV
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67693, 67694)
 Single junction materials arealso screened on predicted single junction photovoltaic (PV) efficienciesexceeding 22.7%, which is the current highest reported PV efficiency for halideperovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1845, 'halide', 2],[16.0, 22.7, '%', 0],[75.0, 15, 'materials', 2],[96.0, 13, 'of', 2]

(CH3NH3)0.75Cs0.25SnI3
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67810, 67823)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
0.43902439024390244,0,0,0,0,0.07317073170731707,0.07317073170731707,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0975609756097561,0,0,0.2926829268292683,0,0.024390243902439025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 1845, 'halide', 4],[133.0, 22.7, '%', 2],[41.0, 15, 'materials', 0],[20.0, 13, 'of', 0]

H2
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67829, 67830)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 1845, 'halide', 4],[152.0, 22.7, '%', 2],[60.0, 15, 'materials', 0],[39.0, 13, 'of', 0]

H
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67834, 67834)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 1845, 'halide', 4],[157.0, 22.7, '%', 2],[65.0, 15, 'materials', 0],[44.0, 13, 'of', 0]

Ag0.5Sb0.5Br3
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67836, 67841)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 1845, 'halide', 4],[159.0, 22.7, '%', 2],[67.0, 15, 'materials', 0],[46.0, 13, 'of', 0]

CsMn0.875Fe0.125I3
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67844, 67850)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.175,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 1845, 'halide', 4],[167.0, 22.7, '%', 2],[75.0, 15, 'materials', 0],[54.0, 13, 'of', 0]

H3
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67857, 67858)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 1845, 'halide', 4],[180.0, 22.7, '%', 2],[88.0, 15, 'materials', 0],[67.0, 13, 'of', 0]

H2
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67862, 67863)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 1845, 'halide', 4],[185.0, 22.7, '%', 2],[93.0, 15, 'materials', 0],[72.0, 13, 'of', 0]

Ag0.5Bi0.5I3
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67865, 67870)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 1845, 'halide', 4],[188.0, 22.7, '%', 2],[96.0, 15, 'materials', 0],[75.0, 13, 'of', 0]

H2
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67878, 67879)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 1845, 'halide', 4],[201.0, 22.7, '%', 2],[109.0, 15, 'materials', 0],[88.0, 13, 'of', 0]

H
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67883, 67883)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 1845, 'halide', 4],[206.0, 22.7, '%', 2],[114.0, 15, 'materials', 0],[93.0, 13, 'of', 0]

Rb0.5SnI3
###Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells|Ryan Jacobs,Guangfu Luo,Dane Morgan###
(67886, 67890)
 From a set of 1845materials, 15 materials pass all screening criteria for single junction cellapplications, 13 of which have not been previously investigated, such as(CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3,((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 1845, 'halide', 4],[209.0, 22.7, '%', 2],[117.0, 15, 'materials', 0],[96.0, 13, 'of', 0]

(ZnO)
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68489, 68492)
 Among the n<missing VAR>-type metal oxide materials used in the planar perovskite solarcells, zinc oxide (ZnO) is a promising candidate to replace titanium dioxide(TiO2) due to its relatively high electron mobility, high transparency, andversatile nanostructures.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 12.25, 'to', 2],[182.0, 16.07, '%', 2],[255.0, 20.58, 'mA', 3],[258.0, 2, ',', 3],[260.0, 1.09, 'V', 3],[265.0, 71.6, '%', 3]

(TiO2)
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68511, 68515)
 Among the n<missing VAR>-type metal oxide materials used in the planar perovskite solarcells, zinc oxide (ZnO) is a promising candidate to replace titanium dioxide(TiO2) due to its relatively high electron mobility, high transparency, andversatile nanostructures.
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 12.25, 'to', 2],[159.0, 16.07, '%', 2],[232.0, 20.58, 'mA', 3],[235.0, 2, ',', 3],[237.0, 1.09, 'V', 3],[242.0, 71.6, '%', 3]

ZnO/Al
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68567, 68570)
 Here, we present the application of low temperaturesolution processed ZnO/Al-doped ZnO (AZ<missing VAR>O) bilayer thin film as electrontransport layers (ETLs) in the inverted perovskite solar cells, which provide astair-case band profile.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[102.0, 12.25, 'to', 1],[104.0, 16.07, '%', 1],[177.0, 20.58, 'mA', 2],[180.0, 2, ',', 2],[182.0, 1.09, 'V', 2],[187.0, 71.6, '%', 2]

ZnO
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68574, 68575)
 Here, we present the application of low temperaturesolution processed ZnO/Al-doped ZnO (AZ<missing VAR>O) bilayer thin film as electrontransport layers (ETLs) in the inverted perovskite solar cells, which provide astair-case band profile.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 12.25, 'to', 1],[99.0, 16.07, '%', 1],[172.0, 20.58, 'mA', 2],[175.0, 2, ',', 2],[177.0, 1.09, 'V', 2],[182.0, 71.6, '%', 2]

O
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68580, 68580)
 Here, we present the application of low temperaturesolution processed ZnO/Al-doped ZnO (AZ<missing VAR>O) bilayer thin film as electrontransport layers (ETLs) in the inverted perovskite solar cells, which provide astair-case band profile.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 12.25, 'to', 1],[94.0, 16.07, '%', 1],[167.0, 20.58, 'mA', 2],[170.0, 2, ',', 2],[172.0, 1.09, 'V', 2],[177.0, 71.6, '%', 2]

PC
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68651, 68652)
 Experimental results revealed that the powerconversion efficiency (PCE) of perovskite solar cells were significantlyincreased from 12.25 to 16.07% by employing the AZ<missing VAR>O thin film as the bufferlayer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 12.25, 'to', 0],[22.0, 16.07, '%', 0],[95.0, 20.58, 'mA', 1],[98.0, 2, ',', 1],[100.0, 1.09, 'V', 1],[105.0, 71.6, '%', 1]

O
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68685, 68685)
 Experimental results revealed that the powerconversion efficiency (PCE) of perovskite solar cells were significantlyincreased from 12.25 to 16.07% by employing the AZ<missing VAR>O thin film as the bufferlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 12.25, 'to', 0],[11.0, 16.07, '%', 0],[62.0, 20.58, 'mA', 1],[65.0, 2, ',', 1],[67.0, 1.09, 'V', 1],[72.0, 71.6, '%', 1]

(FF)
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68737, 68740)
 Meanwhile, the short-circuit current density (Jsc), open-circuit voltage(Voc), and fill factor (FF) were improved to 20.58 mA/cm2, 1.09V, and 71.6%,respectively.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 12.25, 'to', 1],[63.0, 16.07, '%', 1],[7.0, 20.58, 'mA', 0],[10.0, 2, ',', 0],[12.0, 1.09, 'V', 0],[17.0, 71.6, '%', 0]

ZnO
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68804, 68805)
 The enhancement in performance is attributed to the modifiedinterface in ETL with stair-case band alignment of ZnO/AZ<missing VAR>O/CH3NH3PbI3, whichallows more efficient extraction of photogenerated electrons in the CH3NH3PbI3active layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 12.25, 'to', 2],[130.0, 16.07, '%', 2],[57.0, 20.58, 'mA', 1],[54.0, 2, ',', 1],[52.0, 1.09, 'V', 1],[47.0, 71.6, '%', 1]

O/CH3NH3PbI3
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68809, 68819)
 The enhancement in performance is attributed to the modifiedinterface in ETL with stair-case band alignment of ZnO/AZ<missing VAR>O/CH3NH3PbI3, whichallows more efficient extraction of photogenerated electrons in the CH3NH3PbI3active layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[137.0, 12.25, 'to', 2],[135.0, 16.07, '%', 2],[62.0, 20.58, 'mA', 1],[59.0, 2, ',', 1],[57.0, 1.09, 'V', 1],[52.0, 71.6, '%', 1]

CH3NH3PbI3
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68843, 68851)
 The enhancement in performance is attributed to the modifiedinterface in ETL with stair-case band alignment of ZnO/AZ<missing VAR>O/CH3NH3PbI3, whichallows more efficient extraction of photogenerated electrons in the CH3NH3PbI3active layer.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 12.25, 'to', 2],[169.0, 16.07, '%', 2],[96.0, 20.58, 'mA', 1],[93.0, 2, ',', 1],[91.0, 1.09, 'V', 1],[86.0, 71.6, '%', 1]

ZnO
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68872, 68873)
 Thus, it is demonstrated that the ZnO/AZ<missing VAR>O bilayer ETLs wouldbenefit the electron extraction and contribute in enhancing the performance ofperovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 12.25, 'to', 3],[198.0, 16.07, '%', 3],[125.0, 20.58, 'mA', 2],[122.0, 2, ',', 2],[120.0, 1.09, 'V', 2],[115.0, 71.6, '%', 2]

O
###A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells|Shang-Hsuan Wu,Ming-Yi Lin,Sheng-Hao Chang,Wei-Chen Tu,Chih-Wei Chu,Yia-Chung Chang###
(68877, 68877)
 Thus, it is demonstrated that the ZnO/AZ<missing VAR>O bilayer ETLs wouldbenefit the electron extraction and contribute in enhancing the performance ofperovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 12.25, 'to', 3],[203.0, 16.07, '%', 3],[130.0, 20.58, 'mA', 2],[127.0, 2, ',', 2],[125.0, 1.09, 'V', 2],[120.0, 71.6, '%', 2]

N
###Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures|Zi He,Ji Hong Gu,Wei E. I. Sha,Ru Shan Chen###
(68962, 68962)
 Metallic nanoparticles (NPs) support localized surface plasmon resonances(L<missing VAR>SPRs), which enable to concentrate sunlight at the active layer of solarcells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SP
###Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures|Zi He,Ji Hong Gu,Wei E. I. Sha,Ru Shan Chen###
(68979, 68980)
 Metallic nanoparticles (NPs) support localized surface plasmon resonances(L<missing VAR>SPRs), which enable to concentrate sunlight at the active layer of solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures|Zi He,Ji Hong Gu,Wei E. I. Sha,Ru Shan Chen###
(69092, 69092)
 Itis tremendously difficult to accurately and efficiently simulate near-fieldmultiple scattering effects from plasmonic NPs embedded into solar cells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures|Zi He,Ji Hong Gu,Wei E. I. Sha,Ru Shan Chen###
(69104, 69104)
 Inthis work, a preconditioned volume integral equation (VIE) is proposed to modelplasmonic organic solar cells (OSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures|Zi He,Ji Hong Gu,Wei E. I. Sha,Ru Shan Chen###
(69123, 69124)
 Inthis work, a preconditioned volume integral equation (VIE) is proposed to modelplasmonic organic solar cells (OSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures|Zi He,Ji Hong Gu,Wei E. I. Sha,Ru Shan Chen###
(69145, 69149)
 Inthis work, a preconditioned volume integral equation (VIE) is proposed to modelplasmonic organic solar cells (OSCs).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures|Zi He,Ji Hong Gu,Wei E. I. Sha,Ru Shan Chen###
(69182, 69182)
 As a result,better convergence and higher computing efficiency are achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures|Zi He,Ji Hong Gu,Wei E. I. Sha,Ru Shan Chen###
(69284, 69286)
 Angular responses of theplasmonic OSCs show the super-Lambertian absorption on the plasmon resonancebut near-Lambertian absorption off the plasmon resonance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###Efficient Volumetric Method of Moments for Modeling Plasmonic Thin-Film Solar Cells with Periodic Structures|Zi He,Ji Hong Gu,Wei E. I. Sha,Ru Shan Chen###
(69364, 69366)
 The volumetric methodof moments and explored physical understanding are of great help to investigatethe optical responses of OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69381, 69381)
Potential of PEDOT<missing VAR>PSS as a hole selective front contact for silicon heterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, ',', 1],[181.0, 14.8, '%', 2],[195.0, 660, 'mV', 2],[297.0, 400, 'm', 4]

O
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69384, 69384)
Potential of PEDOT<missing VAR>PSS as a hole selective front contact for silicon heterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 3, ',', 1],[178.0, 14.8, '%', 2],[192.0, 660, 'mV', 2],[294.0, 400, 'm', 4]

PSS
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69386, 69388)
Potential of PEDOT<missing VAR>PSS as a hole selective front contact for silicon heterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, ',', 1],[174.0, 14.8, '%', 2],[188.0, 660, 'mV', 2],[290.0, 400, 'm', 4]

P
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69443, 69443)
 We show that the highly conductive polymerpoly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT<missing VAR>PSS) cansuccessfully be applied as a hole selective front contact in siliconheterojunction (SHJ) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, ',', 0],[119.0, 14.8, '%', 1],[133.0, 660, 'mV', 1],[235.0, 400, 'm', 3]

O
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69446, 69446)
 We show that the highly conductive polymerpoly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT<missing VAR>PSS) cansuccessfully be applied as a hole selective front contact in siliconheterojunction (SHJ) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 3, ',', 0],[116.0, 14.8, '%', 1],[130.0, 660, 'mV', 1],[232.0, 400, 'm', 3]

S
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69450, 69450)
 We show that the highly conductive polymerpoly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT<missing VAR>PSS) cansuccessfully be applied as a hole selective front contact in siliconheterojunction (SHJ) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, ',', 0],[112.0, 14.8, '%', 1],[126.0, 660, 'mV', 1],[228.0, 400, 'm', 3]

SH
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69482, 69483)
 We show that the highly conductive polymerpoly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT<missing VAR>PSS) cansuccessfully be applied as a hole selective front contact in siliconheterojunction (SHJ) solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 3, ',', 0],[79.0, 14.8, '%', 1],[93.0, 660, 'mV', 1],[195.0, 400, 'm', 3]

In
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69492, 69492)
 In combination with a superior electronselective heterojunction back contact based on amorphous silicon (a-Si),mono-crystalline n<missing VAR>-type silicon (c<missing VAR>-Si) solar cells reach power conversionefficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 3, ',', 1],[70.0, 14.8, '%', 0],[84.0, 660, 'mV', 0],[186.0, 400, 'm', 2]

Si
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69524, 69524)
 In combination with a superior electronselective heterojunction back contact based on amorphous silicon (a-Si),mono-crystalline n<missing VAR>-type silicon (c<missing VAR>-Si) solar cells reach power conversionefficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3, ',', 1],[38.0, 14.8, '%', 0],[52.0, 660, 'mV', 0],[154.0, 400, 'm', 2]

Si
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69542, 69542)
 In combination with a superior electronselective heterojunction back contact based on amorphous silicon (a-Si),mono-crystalline n<missing VAR>-type silicon (c<missing VAR>-Si) solar cells reach power conversionefficiencies up to 14.8% and high open-circuit voltages exceeding 660 mV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 3, ',', 1],[20.0, 14.8, '%', 0],[34.0, 660, 'mV', 0],[136.0, 400, 'm', 2]

P
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69586, 69586)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 3, ',', 2],[24.0, 14.8, '%', 1],[10.0, 660, 'mV', 1],[92.0, 400, 'm', 1]

O
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69589, 69589)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 3, ',', 2],[27.0, 14.8, '%', 1],[13.0, 660, 'mV', 1],[89.0, 400, 'm', 1]

PSS
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69591, 69593)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 3, ',', 2],[29.0, 14.8, '%', 1],[15.0, 660, 'mV', 1],[85.0, 400, 'm', 1]

Si
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69597, 69597)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 3, ',', 2],[35.0, 14.8, '%', 1],[21.0, 660, 'mV', 1],[81.0, 400, 'm', 1]

Si
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69601, 69601)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 3, ',', 2],[39.0, 14.8, '%', 1],[25.0, 660, 'mV', 1],[77.0, 400, 'm', 1]

I
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69646, 69646)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 3, ',', 2],[84.0, 14.8, '%', 1],[70.0, 660, 'mV', 1],[32.0, 400, 'm', 1]

P
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69652, 69652)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 3, ',', 2],[90.0, 14.8, '%', 1],[76.0, 660, 'mV', 1],[26.0, 400, 'm', 1]

O
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69655, 69655)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 3, ',', 2],[93.0, 14.8, '%', 1],[79.0, 660, 'mV', 1],[23.0, 400, 'm', 1]

PSS
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69657, 69659)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 3, ',', 2],[95.0, 14.8, '%', 1],[81.0, 660, 'mV', 1],[19.0, 400, 'm', 1]

Si
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69663, 69663)
 Sincein the PEDOT<missing VAR>PSS/c<missing VAR>-Si/a-Si solar cell the inferior hybrid junction isdetermining the electrical device performance we are capable of assessing therecombination velocity v<missing VAR>I at the PEDOT<missing VAR>PSS/c<missing VAR>-Si interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 3, ',', 2],[101.0, 14.8, '%', 1],[87.0, 660, 'mV', 1],[15.0, 400, 'm', 1]

I
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69673, 69673)
 An estimated v<missing VAR>I of 400 m/s<missing VAR> demonstrates, that while PEDOT<missing VAR>PSS shows an excellent selectivity onn<missing VAR>-type c<missing VAR>-Si, the passivation quality provided by the formation of a nativeoxide at the c<missing VAR>-Si surface restricts the performance of the hybrid junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 3, ',', 3],[111.0, 14.8, '%', 2],[97.0, 660, 'mV', 2],[5.0, 400, 'm', 0]

P
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69689, 69689)
 An estimated v<missing VAR>I of 400 m/s<missing VAR> demonstrates, that while PEDOT<missing VAR>PSS shows an excellent selectivity onn<missing VAR>-type c<missing VAR>-Si, the passivation quality provided by the formation of a nativeoxide at the c<missing VAR>-Si surface restricts the performance of the hybrid junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 3, ',', 3],[127.0, 14.8, '%', 2],[113.0, 660, 'mV', 2],[11.0, 400, 'm', 0]

O
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69692, 69692)
 An estimated v<missing VAR>I of 400 m/s<missing VAR> demonstrates, that while PEDOT<missing VAR>PSS shows an excellent selectivity onn<missing VAR>-type c<missing VAR>-Si, the passivation quality provided by the formation of a nativeoxide at the c<missing VAR>-Si surface restricts the performance of the hybrid junction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 3, ',', 3],[130.0, 14.8, '%', 2],[116.0, 660, 'mV', 2],[14.0, 400, 'm', 0]

PSS
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69694, 69696)
 An estimated v<missing VAR>I of 400 m/s<missing VAR> demonstrates, that while PEDOT<missing VAR>PSS shows an excellent selectivity onn<missing VAR>-type c<missing VAR>-Si, the passivation quality provided by the formation of a nativeoxide at the c<missing VAR>-Si surface restricts the performance of the hybrid junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 3, ',', 3],[132.0, 14.8, '%', 2],[118.0, 660, 'mV', 2],[16.0, 400, 'm', 0]

Si
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69715, 69715)
 An estimated v<missing VAR>I of 400 m/s<missing VAR> demonstrates, that while PEDOT<missing VAR>PSS shows an excellent selectivity onn<missing VAR>-type c<missing VAR>-Si, the passivation quality provided by the formation of a nativeoxide at the c<missing VAR>-Si surface restricts the performance of the hybrid junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 3, ',', 3],[153.0, 14.8, '%', 2],[139.0, 660, 'mV', 2],[37.0, 400, 'm', 0]

Si
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69747, 69747)
 An estimated v<missing VAR>I of 400 m/s<missing VAR> demonstrates, that while PEDOT<missing VAR>PSS shows an excellent selectivity onn<missing VAR>-type c<missing VAR>-Si, the passivation quality provided by the formation of a nativeoxide at the c<missing VAR>-Si surface restricts the performance of the hybrid junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 3, ',', 3],[185.0, 14.8, '%', 2],[171.0, 660, 'mV', 2],[69.0, 400, 'm', 0]

P
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69810, 69810)
Furthermore, by comparing the measured external quantum efficiency with opticalsimulations, we quantify the losses due to parasitic absorption of PEDOT<missing VAR>PSSand reflection of the device layer stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[380.0, 3, ',', 4],[248.0, 14.8, '%', 3],[234.0, 660, 'mV', 3],[132.0, 400, 'm', 1]

O
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69813, 69813)
Furthermore, by comparing the measured external quantum efficiency with opticalsimulations, we quantify the losses due to parasitic absorption of PEDOT<missing VAR>PSSand reflection of the device layer stack.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 3, ',', 4],[251.0, 14.8, '%', 3],[237.0, 660, 'mV', 3],[135.0, 400, 'm', 1]

PSS
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69815, 69817)
Furthermore, by comparing the measured external quantum efficiency with opticalsimulations, we quantify the losses due to parasitic absorption of PEDOT<missing VAR>PSSand reflection of the device layer stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 3, ',', 4],[253.0, 14.8, '%', 3],[239.0, 660, 'mV', 3],[137.0, 400, 'm', 1]

P
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69879, 69879)
 By pointing out ways to betterpassivate the hybrid interface and to increase the photocurrent we discuss thefull potential of PEDOT<missing VAR>PSS as a front contact in SHJ<missing VAR> solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 3, ',', 5],[317.0, 14.8, '%', 4],[303.0, 660, 'mV', 4],[201.0, 400, 'm', 2]

O
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69882, 69882)
 By pointing out ways to betterpassivate the hybrid interface and to increase the photocurrent we discuss thefull potential of PEDOT<missing VAR>PSS as a front contact in SHJ<missing VAR> solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[452.0, 3, ',', 5],[320.0, 14.8, '%', 4],[306.0, 660, 'mV', 4],[204.0, 400, 'm', 2]

PSS
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69884, 69886)
 By pointing out ways to betterpassivate the hybrid interface and to increase the photocurrent we discuss thefull potential of PEDOT<missing VAR>PSS as a front contact in SHJ<missing VAR> solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[454.0, 3, ',', 5],[322.0, 14.8, '%', 4],[308.0, 660, 'mV', 4],[206.0, 400, 'm', 2]

SH
###Potential of PEDOT:PSS as a hole selective front contact for silicon heterojunction solar cells|Sara Jäckle,Martin Liebhaber,Clemens Gersmann,Mathias Mews,Klaus Jäger,Silke Christiansen,Klaus Lips###
(69898, 69899)
 By pointing out ways to betterpassivate the hybrid interface and to increase the photocurrent we discuss thefull potential of PEDOT<missing VAR>PSS as a front contact in SHJ<missing VAR> solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[468.0, 3, ',', 5],[336.0, 14.8, '%', 4],[322.0, 660, 'mV', 4],[220.0, 400, 'm', 2]

(OPV)
###An Efficient Descriptor Model for Designing Materials for Solar Cells|Fahhad H Alharbi,Sergey N Rashkeev,Fedwa El-Mellouhi,Hans P Lüthi,Nouar Tabet,Sabre Kais###
(70207, 70211)
 Although the focus of this work is on organic photovoltaics(OPV), for which the original Scharber model was developed, the model presentedhere is applicable also to other solar cell technologies.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2006, ',', 3],[68.0, 18, ',', 2]

(PV)
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70405, 70408)
 The increase in the temperature of photovoltaic (PV) solar cells affectsnegatively their power conversion efficiency and decreases their lifetime.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 6, '%', 7],[376.0, 19, '%', 9],[382.0, 6, '%', 9],[415.0, 75, '%', 10]

PV
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70474, 70475)
Therefore, it is crucial to limit the PV cell temperature by effectivelyremoving the excess heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 6, '%', 5],[309.0, 19, '%', 7],[315.0, 6, '%', 7],[348.0, 75, '%', 8]

PC
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70506, 70507)
 Conventional thermal phase change materials (PCMs)and thermal interface materials (T<missing VAR>IMs) do not possess the thermal conductivityvalues sufficient for thermal management of the next generation of PV cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 6, '%', 4],[277.0, 19, '%', 6],[283.0, 6, '%', 6],[316.0, 75, '%', 7]

I
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70522, 70522)
 Conventional thermal phase change materials (PCMs)and thermal interface materials (T<missing VAR>IMs) do not possess the thermal conductivityvalues sufficient for thermal management of the next generation of PV cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 6, '%', 4],[262.0, 19, '%', 6],[268.0, 6, '%', 6],[301.0, 75, '%', 7]

PV
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70559, 70560)
 Conventional thermal phase change materials (PCMs)and thermal interface materials (T<missing VAR>IMs) do not possess the thermal conductivityvalues sufficient for thermal management of the next generation of PV cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 6, '%', 4],[224.0, 19, '%', 6],[230.0, 6, '%', 6],[263.0, 75, '%', 7]

In
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70565, 70565)
 Inthis paper, we report the results of investigation of the increased efficiencyof PV cells with the use of graphene-enhanced T<missing VAR>IMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 6, '%', 3],[219.0, 19, '%', 5],[225.0, 6, '%', 5],[258.0, 75, '%', 6]

PV
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70596, 70597)
 Inthis paper, we report the results of investigation of the increased efficiencyof PV cells with the use of graphene-enhanced T<missing VAR>IMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 6, '%', 3],[187.0, 19, '%', 5],[193.0, 6, '%', 5],[226.0, 75, '%', 6]

I
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70614, 70614)
 Inthis paper, we report the results of investigation of the increased efficiencyof PV cells with the use of graphene-enhanced T<missing VAR>IMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 6, '%', 3],[170.0, 19, '%', 5],[176.0, 6, '%', 5],[209.0, 75, '%', 6]

I
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70684, 70684)
 We prepared T<missing VAR>IMs with up to 6% of graphene designedspecifically for PV cell application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 6, '%', 0],[100.0, 19, '%', 2],[106.0, 6, '%', 2],[139.0, 75, '%', 3]

PV
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70707, 70708)
 We prepared T<missing VAR>IMs with up to 6% of graphene designedspecifically for PV cell application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 6, '%', 0],[76.0, 19, '%', 2],[82.0, 6, '%', 2],[115.0, 75, '%', 3]

I
###Graphene-Enhanced Thermal Interface Materials for Thermal Management of Photovoltaic Solar Cells|M. Saadah,D. Gamalath,E. Hernandez,A. A. Balandin###
(70800, 70800)
 It was found that the drop in the output voltage ofthe solar panel under two-sun concentrated illumination can be reduced from 19%to 6% when graphene-enhanced T<missing VAR>IMs are used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 6, '%', 2],[16.0, 19, '%', 0],[10.0, 6, '%', 0],[23.0, 75, '%', 1]

In
###Luminescent Waveguides In-situ Integrated with Organic Solar Cells for Internet of Things|Sadra Sadeghi,Mertcan Han,Shashi Bhushan Srivastava,Sedat Nizamoglu###
(70853, 70853)
Luminescent Waveguides In-situ Integrated with Organic Solar Cells for Internet of Things.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 91, '%', 4],[314.0, 35, 'meters', 5]

In
###Luminescent Waveguides In-situ Integrated with Organic Solar Cells for Internet of Things|Sadra Sadeghi,Mertcan Han,Shashi Bhushan Srivastava,Sedat Nizamoglu###
(70958, 70958)
 Inthis study, we report a transparent, luminescent, and elastomeric opticalwaveguide incorporating quantum dots that is in-situ coupled with organic solarcell array made of P3HT<missing VAR>PC61BM<missing VAR> bulk heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 91, '%', 1],[209.0, 35, 'meters', 2]

P3H
###Luminescent Waveguides In-situ Integrated with Organic Solar Cells for Internet of Things|Sadra Sadeghi,Mertcan Han,Shashi Bhushan Srivastava,Sedat Nizamoglu###
(71018, 71020)
 Inthis study, we report a transparent, luminescent, and elastomeric opticalwaveguide incorporating quantum dots that is in-situ coupled with organic solarcell array made of P3HT<missing VAR>PC61BM<missing VAR> bulk heterojunction.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 91, '%', 1],[147.0, 35, 'meters', 2]

PC61B
###Luminescent Waveguides In-situ Integrated with Organic Solar Cells for Internet of Things|Sadra Sadeghi,Mertcan Han,Shashi Bhushan Srivastava,Sedat Nizamoglu###
(71022, 71025)
 Inthis study, we report a transparent, luminescent, and elastomeric opticalwaveguide incorporating quantum dots that is in-situ coupled with organic solarcell array made of P3HT<missing VAR>PC61BM<missing VAR> bulk heterojunction.
Featurization terminated normally.
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 91, '%', 1],[142.0, 35, 'meters', 2]

CdSeZnS
###Luminescent Waveguides In-situ Integrated with Organic Solar Cells for Internet of Things|Sadra Sadeghi,Mertcan Han,Shashi Bhushan Srivastava,Sedat Nizamoglu###
(71033, 71036)
 CdSeZnS Q<missing VAR>Ds have aphotoluminescence quantum yield (PLQY) of 91% and are synthetically engineeredto match their photoluminescence spectra with the photo-response of P3HT<missing VAR>PC61BM<missing VAR>solar cells for efficient energy harvesting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 91, '%', 0],[131.0, 35, 'meters', 1]

Ds
###Luminescent Waveguides In-situ Integrated with Organic Solar Cells for Internet of Things|Sadra Sadeghi,Mertcan Han,Shashi Bhushan Srivastava,Sedat Nizamoglu###
(71039, 71039)
 CdSeZnS Q<missing VAR>Ds have aphotoluminescence quantum yield (PLQY) of 91% and are synthetically engineeredto match their photoluminescence spectra with the photo-response of P3HT<missing VAR>PC61BM<missing VAR>solar cells for efficient energy harvesting.
EXCEPTION 3: IndexError for Ds
P
[22.0, 91, '%', 0],[128.0, 35, 'meters', 1]

Cu
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(71791, 71791)
 Cu(In,Ga)Se2 based solar cells exceed power conversion efficiencies of 23 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 84.9, '%', 1]

In
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(71793, 71793)
 Cu(In,Ga)Se2 based solar cells exceed power conversion efficiencies of 23 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 84.9, '%', 1]

Ga
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(71795, 71795)
 Cu(In,Ga)Se2 based solar cells exceed power conversion efficiencies of 23 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 84.9, '%', 1]

Se2
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(71797, 71798)
 Cu(In,Ga)Se2 based solar cells exceed power conversion efficiencies of 23 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 84.9, '%', 1]

Si
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(71861, 71861)
Yet, the fill factor of these solar cells, with best values around 80 %, isrelatively low (Si reaches 84.9%) mostly due to diode factors greater than one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 84.9, '%', 0]

Cu
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(71909, 71909)
Recently, we proposed metastable defects, a general feature of the Cu(In,Ga)Se2alloy, to be the origin of the increased diode factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 84.9, '%', 1]

In
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(71911, 71911)
Recently, we proposed metastable defects, a general feature of the Cu(In,Ga)Se2alloy, to be the origin of the increased diode factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 84.9, '%', 1]

Ga
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(71913, 71913)
Recently, we proposed metastable defects, a general feature of the Cu(In,Ga)Se2alloy, to be the origin of the increased diode factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 84.9, '%', 1]

Se2
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(71915, 71916)
Recently, we proposed metastable defects, a general feature of the Cu(In,Ga)Se2alloy, to be the origin of the increased diode factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 84.9, '%', 1]

Ag
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72188, 72188)
 Interestingly, the lowest diode factor (optical and electrical) andconsequently highest fill factor of 81.0 % is obtained by Ag alloying, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 84.9, '%', 6]

Ag
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72202, 72202)
 an(Ag,Cu)(In,Ga)Se2 absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 84.9, '%', 7]

Cu
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72204, 72204)
 an(Ag,Cu)(In,Ga)Se2 absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 84.9, '%', 7]

In
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72207, 72207)
 an(Ag,Cu)(In,Ga)Se2 absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 84.9, '%', 7]

Ga
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72209, 72209)
 an(Ag,Cu)(In,Ga)Se2 absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 84.9, '%', 7]

Se2
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72211, 72212)
 an(Ag,Cu)(In,Ga)Se2 absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 84.9, '%', 7]

Cu
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72246, 72246)
 This finding hints to a pathway to increase fillfactors and thus efficiencies for Cu(In,Ga)Se2-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 84.9, '%', 8]

In
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72248, 72248)
 This finding hints to a pathway to increase fillfactors and thus efficiencies for Cu(In,Ga)Se2-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 84.9, '%', 8]

Ga
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72250, 72250)
 This finding hints to a pathway to increase fillfactors and thus efficiencies for Cu(In,Ga)Se2-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 84.9, '%', 8]

Se2
###Metastable defects decrease the fill factor of solar cells|Thomas Paul Weiss,Omar Ramírez,Stefan Paetel,Wolfram Witte,Jiro Nishinaga,Thomas Feurer,Susanne Siebentritt###
(72252, 72253)
 This finding hints to a pathway to increase fillfactors and thus efficiencies for Cu(In,Ga)Se2-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 84.9, '%', 8]

III
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72280, 72282)
Predicted annual energy yield of III-V/c<missing VAR>-Si tandem solar cells modelling the effect of changing spectrum on current-matching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 30, '%', 1],[409.0, 31, '%', 6],[431.0, 2.8, '%', 6],[581.0, 25, '%', 10]

V
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72284, 72284)
Predicted annual energy yield of III-V/c<missing VAR>-Si tandem solar cells modelling the effect of changing spectrum on current-matching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 30, '%', 1],[407.0, 31, '%', 6],[429.0, 2.8, '%', 6],[579.0, 25, '%', 10]

Si
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72288, 72288)
Predicted annual energy yield of III-V/c<missing VAR>-Si tandem solar cells modelling the effect of changing spectrum on current-matching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 30, '%', 1],[403.0, 31, '%', 6],[425.0, 2.8, '%', 6],[575.0, 25, '%', 10]

III
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72570, 72572)
 To investigate the impact of this issue the energy yield(%) of tandem solar cells comprising a III-V wide-bandgap solar cell connectedelectrically and optically in series with a silicon bottom cell was simulatedover a full year using measured spectral data from Denver, CO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 30, '%', 3],[119.0, 31, '%', 2],[141.0, 2.8, '%', 2],[291.0, 25, '%', 6]

V
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72574, 72574)
 To investigate the impact of this issue the energy yield(%) of tandem solar cells comprising a III-V wide-bandgap solar cell connectedelectrically and optically in series with a silicon bottom cell was simulatedover a full year using measured spectral data from Denver, CO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 30, '%', 3],[117.0, 31, '%', 2],[139.0, 2.8, '%', 2],[289.0, 25, '%', 6]

CO
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72633, 72634)
 To investigate the impact of this issue the energy yield(%) of tandem solar cells comprising a III-V wide-bandgap solar cell connectedelectrically and optically in series with a silicon bottom cell was simulatedover a full year using measured spectral data from Denver, CO.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 30, '%', 3],[57.0, 31, '%', 2],[79.0, 2.8, '%', 2],[229.0, 25, '%', 6]

V
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72653, 72653)
 Top cells withbandgaps from 1.5-1.9 e<missing VAR>V were modelled using an external radiative efficiencymethod.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 30, '%', 4],[38.0, 31, '%', 1],[60.0, 2.8, '%', 1],[210.0, 25, '%', 5]

V
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72704, 72704)
 The predicted annual energy yields were as high as 31% with an optimum1.8 e<missing VAR>V top cell, only 2.8% lower (absolute) than the AM1.5G predictedefficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 30, '%', 5],[13.0, 31, '%', 0],[9.0, 2.8, '%', 0],[159.0, 25, '%', 4]

III
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72868, 72870)
 Our results indicate that AM1.5G basedoptimization of sub-cells can be effectively employed to achieve high energyyields of >25% for III-V/Si tandem solar cells in mid-latitude US locations,despite the continuous variation in spectra throughout a calendar year.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[546.0, 30, '%', 9],[177.0, 31, '%', 4],[155.0, 2.8, '%', 4],[5.0, 25, '%', 0]

V/Si
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72872, 72874)
 Our results indicate that AM1.5G basedoptimization of sub-cells can be effectively employed to achieve high energyyields of >25% for III-V/Si tandem solar cells in mid-latitude US locations,despite the continuous variation in spectra throughout a calendar year.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[550.0, 30, '%', 9],[181.0, 31, '%', 4],[159.0, 2.8, '%', 4],[9.0, 25, '%', 0]

US
###Predicted annual energy yield of III-V/c-Si tandem solar cells: modelling the effect of changing spectrum on current-matching|Ian Mathews,Shenghui Lei,Ronan Frizzell###
(72888, 72889)
 Our results indicate that AM1.5G basedoptimization of sub-cells can be effectively employed to achieve high energyyields of >25% for III-V/Si tandem solar cells in mid-latitude US locations,despite the continuous variation in spectra throughout a calendar year.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[566.0, 30, '%', 9],[197.0, 31, '%', 4],[175.0, 2.8, '%', 4],[25.0, 25, '%', 0]

(Sr)
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(72967, 72969)
 The incorporation of even small amounts of strontium (Sr) into lead-basedquadruple cation hybrid perovskite solar cells results in a systematic increaseof the open circuit voltage (Voc) in pin-type perovskite solar cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 1.18, 'V', 5],[352.0, 1.23, 'V', 5],[386.0, 110, 'meV', 5],[480.0, 20.3, '%', 6]

P
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73044, 73044)
 Wedemonstrate via transient and absolute photoluminescence (PL) experiments howthe incorporation of Sr significantly reduces the non-radiative recombinationlosses in the neat perovskite layer and specifically at the perovskite/C60interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 1.18, 'V', 4],[277.0, 1.23, 'V', 4],[311.0, 110, 'meV', 4],[405.0, 20.3, '%', 5]

Sr
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73059, 73059)
 Wedemonstrate via transient and absolute photoluminescence (PL) experiments howthe incorporation of Sr significantly reduces the non-radiative recombinationlosses in the neat perovskite layer and specifically at the perovskite/C60interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 1.18, 'V', 4],[262.0, 1.23, 'V', 4],[296.0, 110, 'meV', 4],[390.0, 20.3, '%', 5]

C60
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73096, 73097)
 Wedemonstrate via transient and absolute photoluminescence (PL) experiments howthe incorporation of Sr significantly reduces the non-radiative recombinationlosses in the neat perovskite layer and specifically at the perovskite/C60interface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 1.18, 'V', 4],[224.0, 1.23, 'V', 4],[258.0, 110, 'meV', 4],[352.0, 20.3, '%', 5]

Sr
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73109, 73109)
 We show that Sr segregates at the perovskite surface, where itinduces important changes of morphology and energetics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 1.18, 'V', 3],[212.0, 1.23, 'V', 3],[246.0, 110, 'meV', 3],[340.0, 20.3, '%', 4]

Sr
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73148, 73148)
 Notably, theSr-enriched surface exhibits a wider band gap and a more n<missing VAR>-type character,accompanied with significantly stronger surface band bending.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 1.18, 'V', 2],[173.0, 1.23, 'V', 2],[207.0, 110, 'meV', 2],[301.0, 20.3, '%', 3]

As
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73193, 73193)
 As a result, weobserve a significant increase of the quasi-Fermi level splitting in the neatperovskite by reduced surface recombination and more importantly, a strongreduction of losses attributed to non-radiative recombination at the interfaceto the C60 electron-transporting layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1.18, 'V', 1],[128.0, 1.23, 'V', 1],[162.0, 110, 'meV', 1],[256.0, 20.3, '%', 2]

C60
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73279, 73280)
 As a result, weobserve a significant increase of the quasi-Fermi level splitting in the neatperovskite by reduced surface recombination and more importantly, a strongreduction of losses attributed to non-radiative recombination at the interfaceto the C60 electron-transporting layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.18, 'V', 1],[41.0, 1.23, 'V', 1],[75.0, 110, 'meV', 1],[169.0, 20.3, '%', 2]

Sr
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73378, 73378)
 Our work shows that simply adding a small amount of Sr to theprecursor solutions induces a beneficial surface modification in theperovskite, without requiring any post treatment, resulting in high efficiencysolar cells with power conversion efficiency (PCE) up to 20.3%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1.18, 'V', 1],[57.0, 1.23, 'V', 1],[23.0, 110, 'meV', 1],[71.0, 20.3, '%', 0]

PC
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73440, 73441)
 Our work shows that simply adding a small amount of Sr to theprecursor solutions induces a beneficial surface modification in theperovskite, without requiring any post treatment, resulting in high efficiencysolar cells with power conversion efficiency (PCE) up to 20.3%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 1.18, 'V', 1],[119.0, 1.23, 'V', 1],[85.0, 110, 'meV', 1],[8.0, 20.3, '%', 0]

Sr
###High Open Circuit Voltages in pin-Type Perovskite Solar Cells through Strontium Addition|Pietro Caprioglio,Fengshuo Zu,Christian M. Wolff,José A. Márquez Prieto,Martin Stolterfoht,Norbert Koch,Thomas Unold,Bernd Rech,Steve Albrecht,Dieter Neher###
(73474, 73474)
 Our resultsdemonstrate very high Voc values and efficiencies in Sr-containing quadruplecation perovskite pin solar cells and highlight the imperative importance ofaddressing and minimizing the recombination losses at the interface betweenperovskite and charge transporting layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1.18, 'V', 2],[153.0, 1.23, 'V', 2],[119.0, 110, 'meV', 2],[25.0, 20.3, '%', 1]

GaInP
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73550, 73552)
Inverted rear-heterojunction GaInP solar cells using Te memory effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 35, 'meV', 4],[417.0, 1.32, 'mA', 6],[420.0, 2, ',', 6],[442.0, 0.35, 'mA', 6],[562.0, 147, 'ohms', 8]

Te
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73560, 73560)
Inverted rear-heterojunction GaInP solar cells using Te memory effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 35, 'meV', 4],[409.0, 1.32, 'mA', 6],[412.0, 2, ',', 6],[434.0, 0.35, 'mA', 6],[554.0, 147, 'ohms', 8]

GaAs
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73585, 73586)
 Tellurium allows attaining heavy n<missing VAR>-type doping levels in GaAs, which issuited to achieve very low contact resistivities in solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 35, 'meV', 3],[383.0, 1.32, 'mA', 5],[386.0, 2, ',', 5],[408.0, 0.35, 'mA', 5],[528.0, 147, 'ohms', 7]

OVP
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73632, 73634)
 Besides, itmodifies the energy bandgap of M<missing VAR>OVPE<missing VAR>-grown GaInP by reducing the group-IIIsublattice ordering and presents a strong memory effect which induces residualn<missing VAR>-type doping in subsequent layers, potentially detrimental to the performanceof the solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 35, 'meV', 2],[335.0, 1.32, 'mA', 4],[338.0, 2, ',', 4],[360.0, 0.35, 'mA', 4],[480.0, 147, 'ohms', 6]

GaInP
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73639, 73641)
 Besides, itmodifies the energy bandgap of M<missing VAR>OVPE<missing VAR>-grown GaInP by reducing the group-IIIsublattice ordering and presents a strong memory effect which induces residualn<missing VAR>-type doping in subsequent layers, potentially detrimental to the performanceof the solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 35, 'meV', 2],[328.0, 1.32, 'mA', 4],[331.0, 2, ',', 4],[353.0, 0.35, 'mA', 4],[473.0, 147, 'ohms', 6]

III
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73651, 73653)
 Besides, itmodifies the energy bandgap of M<missing VAR>OVPE<missing VAR>-grown GaInP by reducing the group-IIIsublattice ordering and presents a strong memory effect which induces residualn<missing VAR>-type doping in subsequent layers, potentially detrimental to the performanceof the solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 35, 'meV', 2],[316.0, 1.32, 'mA', 4],[319.0, 2, ',', 4],[341.0, 0.35, 'mA', 4],[461.0, 147, 'ohms', 6]

In
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73712, 73712)
 In this work, we present an inverted rear-heterojunctionGaInP solar cell that employs a thick Te-doped GaInP layer as absorber, with adoping profile obtained exclusively by controlling the memory effect of Tecoming from the preceding growth of a heavily doped GaAs contact layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 35, 'meV', 1],[257.0, 1.32, 'mA', 3],[260.0, 2, ',', 3],[282.0, 0.35, 'mA', 3],[402.0, 147, 'ohms', 5]

GaInP
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73732, 73734)
 In this work, we present an inverted rear-heterojunctionGaInP solar cell that employs a thick Te-doped GaInP layer as absorber, with adoping profile obtained exclusively by controlling the memory effect of Tecoming from the preceding growth of a heavily doped GaAs contact layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 35, 'meV', 1],[235.0, 1.32, 'mA', 3],[238.0, 2, ',', 3],[260.0, 0.35, 'mA', 3],[380.0, 147, 'ohms', 5]

Te
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73748, 73748)
 In this work, we present an inverted rear-heterojunctionGaInP solar cell that employs a thick Te-doped GaInP layer as absorber, with adoping profile obtained exclusively by controlling the memory effect of Tecoming from the preceding growth of a heavily doped GaAs contact layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 35, 'meV', 1],[221.0, 1.32, 'mA', 3],[224.0, 2, ',', 3],[246.0, 0.35, 'mA', 3],[366.0, 147, 'ohms', 5]

GaInP
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73752, 73754)
 In this work, we present an inverted rear-heterojunctionGaInP solar cell that employs a thick Te-doped GaInP layer as absorber, with adoping profile obtained exclusively by controlling the memory effect of Tecoming from the preceding growth of a heavily doped GaAs contact layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 35, 'meV', 1],[215.0, 1.32, 'mA', 3],[218.0, 2, ',', 3],[240.0, 0.35, 'mA', 3],[360.0, 147, 'ohms', 5]

Te
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73788, 73788)
 In this work, we present an inverted rear-heterojunctionGaInP solar cell that employs a thick Te-doped GaInP layer as absorber, with adoping profile obtained exclusively by controlling the memory effect of Tecoming from the preceding growth of a heavily doped GaAs contact layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 35, 'meV', 1],[181.0, 1.32, 'mA', 3],[184.0, 2, ',', 3],[206.0, 0.35, 'mA', 3],[326.0, 147, 'ohms', 5]

GaAs
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73809, 73810)
 In this work, we present an inverted rear-heterojunctionGaInP solar cell that employs a thick Te-doped GaInP layer as absorber, with adoping profile obtained exclusively by controlling the memory effect of Tecoming from the preceding growth of a heavily doped GaAs contact layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 35, 'meV', 1],[159.0, 1.32, 'mA', 3],[162.0, 2, ',', 3],[184.0, 0.35, 'mA', 3],[304.0, 147, 'ohms', 5]

In
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73817, 73817)
 In thisway, GaInP is partially disordered with the use of no additional surfactant,leading to an increase in the solar cell bandgap of around 35 meV as comparedto traditional samples doped with silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 35, 'meV', 0],[152.0, 1.32, 'mA', 2],[155.0, 2, ',', 2],[177.0, 0.35, 'mA', 2],[297.0, 147, 'ohms', 4]

GaInP
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73825, 73827)
 In thisway, GaInP is partially disordered with the use of no additional surfactant,leading to an increase in the solar cell bandgap of around 35 meV as comparedto traditional samples doped with silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 35, 'meV', 0],[142.0, 1.32, 'mA', 2],[145.0, 2, ',', 2],[167.0, 0.35, 'mA', 2],[287.0, 147, 'ohms', 4]

In
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73892, 73892)
 In the proof-of-concept experimentaldevices developed so far, the use of a rear-heterojunction configuration andthe bandgap increase results in a global open-circuit voltage enhancement of109 m<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 35, 'meV', 1],[77.0, 1.32, 'mA', 1],[80.0, 2, ',', 1],[102.0, 0.35, 'mA', 1],[222.0, 147, 'ohms', 3]

V
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(73959, 73959)
 In the proof-of-concept experimentaldevices developed so far, the use of a rear-heterojunction configuration andthe bandgap increase results in a global open-circuit voltage enhancement of109 m<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 35, 'meV', 1],[10.0, 1.32, 'mA', 1],[13.0, 2, ',', 1],[35.0, 0.35, 'mA', 1],[155.0, 147, 'ohms', 3]

I
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(74029, 74029)
 These preliminary results are discussed by analyzing the I-Vcurve parameters and quantum efficiencies of a Te-doped rear-heterojunction, aSi-doped rear-heterojunction and a Si-doped front-junction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 35, 'meV', 3],[60.0, 1.32, 'mA', 1],[57.0, 2, ',', 1],[35.0, 0.35, 'mA', 1],[85.0, 147, 'ohms', 1]

V
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(74031, 74031)
 These preliminary results are discussed by analyzing the I-Vcurve parameters and quantum efficiencies of a Te-doped rear-heterojunction, aSi-doped rear-heterojunction and a Si-doped front-junction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 35, 'meV', 3],[62.0, 1.32, 'mA', 1],[59.0, 2, ',', 1],[37.0, 0.35, 'mA', 1],[83.0, 147, 'ohms', 1]

Te
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(74048, 74048)
 These preliminary results are discussed by analyzing the I-Vcurve parameters and quantum efficiencies of a Te-doped rear-heterojunction, aSi-doped rear-heterojunction and a Si-doped front-junction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 35, 'meV', 3],[79.0, 1.32, 'mA', 1],[76.0, 2, ',', 1],[54.0, 0.35, 'mA', 1],[66.0, 147, 'ohms', 1]

Si
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(74060, 74060)
 These preliminary results are discussed by analyzing the I-Vcurve parameters and quantum efficiencies of a Te-doped rear-heterojunction, aSi-doped rear-heterojunction and a Si-doped front-junction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 35, 'meV', 3],[91.0, 1.32, 'mA', 1],[88.0, 2, ',', 1],[66.0, 0.35, 'mA', 1],[54.0, 147, 'ohms', 1]

Si
###Inverted rear-heterojunction GaInP solar cells using Te memory effect|Manuel Hinojosa,Iván García,Ignacio Rey-Stolle,Carlos Algora###
(74072, 74072)
 These preliminary results are discussed by analyzing the I-Vcurve parameters and quantum efficiencies of a Te-doped rear-heterojunction, aSi-doped rear-heterojunction and a Si-doped front-junction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 35, 'meV', 3],[103.0, 1.32, 'mA', 1],[100.0, 2, ',', 1],[78.0, 0.35, 'mA', 1],[42.0, 147, 'ohms', 1]

C
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74175, 74175)
Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 22, '%', 0],[229.0, 5, 'eV', 4],[377.0, 20.98, 'mA', 7],[409.0, 2000, 'nm', 7],[444.0, 21.7, '%', 8]

S
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74179, 74179)
Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 22, '%', 0],[225.0, 5, 'eV', 4],[373.0, 20.98, 'mA', 7],[405.0, 2000, 'nm', 7],[440.0, 21.7, '%', 8]

Se
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74181, 74181)
Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 22, '%', 0],[223.0, 5, 'eV', 4],[371.0, 20.98, 'mA', 7],[403.0, 2000, 'nm', 7],[438.0, 21.7, '%', 8]

Cu2ZnSnS4
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74235, 74240)
 We simulated photovoltaic characteristics of single heterojunction solar cellwith Cu2ZnSnS4 and Cu2ZnSnSe4 absorber layer numerically using one dimensionalsolar cell capacitance simulator (SCAPS-1D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 22, '%', 1],[164.0, 5, 'eV', 3],[312.0, 20.98, 'mA', 6],[344.0, 2000, 'nm', 6],[379.0, 21.7, '%', 7]

Cu2ZnSnSe4
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74244, 74249)
 We simulated photovoltaic characteristics of single heterojunction solar cellwith Cu2ZnSnS4 and Cu2ZnSnSe4 absorber layer numerically using one dimensionalsolar cell capacitance simulator (SCAPS-1D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 22, '%', 1],[155.0, 5, 'eV', 3],[303.0, 20.98, 'mA', 6],[335.0, 2000, 'nm', 6],[370.0, 21.7, '%', 7]

SC
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74273, 74274)
 We simulated photovoltaic characteristics of single heterojunction solar cellwith Cu2ZnSnS4 and Cu2ZnSnSe4 absorber layer numerically using one dimensionalsolar cell capacitance simulator (SCAPS-1D).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 22, '%', 1],[130.0, 5, 'eV', 3],[278.0, 20.98, 'mA', 6],[310.0, 2000, 'nm', 6],[345.0, 21.7, '%', 7]

PS
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74276, 74277)
 We simulated photovoltaic characteristics of single heterojunction solar cellwith Cu2ZnSnS4 and Cu2ZnSnSe4 absorber layer numerically using one dimensionalsolar cell capacitance simulator (SCAPS-1D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 22, '%', 1],[127.0, 5, 'eV', 3],[275.0, 20.98, 'mA', 6],[307.0, 2000, 'nm', 6],[342.0, 21.7, '%', 7]

CdS/ZnO
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74286, 74290)
 n<missing VAR>-CdS/ZnO double buffer layer isused for hetrostructure interfaces with the absorber layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[76.0, 22, '%', 2],[114.0, 5, 'eV', 2],[262.0, 20.98, 'mA', 5],[294.0, 2000, 'nm', 5],[329.0, 21.7, '%', 6]

Mo
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74388, 74388)
 Theperformance is optimized first for the single junction solar cell with Mo asback contact material with work function 5 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 22, '%', 4],[16.0, 5, 'eV', 0],[164.0, 20.98, 'mA', 3],[196.0, 2000, 'nm', 3],[231.0, 21.7, '%', 4]

C
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74413, 74413)
 A double junction CZTS/CZTSetandem cell structure is realized keeping the same material properties as isused in the single CZTS and CZTSe solar cell simulation and considering theflat band condition at the interface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 22, '%', 5],[9.0, 5, 'eV', 1],[139.0, 20.98, 'mA', 2],[171.0, 2000, 'nm', 2],[206.0, 21.7, '%', 3]

S/C
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74416, 74418)
 A double junction CZTS/CZTSetandem cell structure is realized keeping the same material properties as isused in the single CZTS and CZTSe solar cell simulation and considering theflat band condition at the interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[206.0, 22, '%', 5],[12.0, 5, 'eV', 1],[134.0, 20.98, 'mA', 2],[166.0, 2000, 'nm', 2],[201.0, 21.7, '%', 3]

Se
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74421, 74421)
 A double junction CZTS/CZTSetandem cell structure is realized keeping the same material properties as isused in the single CZTS and CZTSe solar cell simulation and considering theflat band condition at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 22, '%', 5],[17.0, 5, 'eV', 1],[131.0, 20.98, 'mA', 2],[163.0, 2000, 'nm', 2],[198.0, 21.7, '%', 3]

C
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74457, 74457)
 A double junction CZTS/CZTSetandem cell structure is realized keeping the same material properties as isused in the single CZTS and CZTSe solar cell simulation and considering theflat band condition at the interface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 22, '%', 5],[53.0, 5, 'eV', 1],[95.0, 20.98, 'mA', 2],[127.0, 2000, 'nm', 2],[162.0, 21.7, '%', 3]

S
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74460, 74460)
 A double junction CZTS/CZTSetandem cell structure is realized keeping the same material properties as isused in the single CZTS and CZTSe solar cell simulation and considering theflat band condition at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 22, '%', 5],[56.0, 5, 'eV', 1],[92.0, 20.98, 'mA', 2],[124.0, 2000, 'nm', 2],[159.0, 21.7, '%', 3]

C
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74464, 74464)
 A double junction CZTS/CZTSetandem cell structure is realized keeping the same material properties as isused in the single CZTS and CZTSe solar cell simulation and considering theflat band condition at the interface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 22, '%', 5],[60.0, 5, 'eV', 1],[88.0, 20.98, 'mA', 2],[120.0, 2000, 'nm', 2],[155.0, 21.7, '%', 3]

Se
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74467, 74467)
 A double junction CZTS/CZTSetandem cell structure is realized keeping the same material properties as isused in the single CZTS and CZTSe solar cell simulation and considering theflat band condition at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 22, '%', 5],[63.0, 5, 'eV', 1],[85.0, 20.98, 'mA', 2],[117.0, 2000, 'nm', 2],[152.0, 21.7, '%', 3]

C
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74532, 74532)
 TheCZTS/CZTSe short circuit current density is  20.98 mA/cm2 for current matched211.33 nm thick CZTS top cell in conjunction with 2000 nm bottom cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 22, '%', 7],[128.0, 5, 'eV', 3],[20.0, 20.98, 'mA', 0],[52.0, 2000, 'nm', 0],[87.0, 21.7, '%', 1]

S/C
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74535, 74537)
 TheCZTS/CZTSe short circuit current density is  20.98 mA/cm2 for current matched211.33 nm thick CZTS top cell in conjunction with 2000 nm bottom cell.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[325.0, 22, '%', 7],[131.0, 5, 'eV', 3],[15.0, 20.98, 'mA', 0],[47.0, 2000, 'nm', 0],[82.0, 21.7, '%', 1]

Se
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74540, 74540)
 TheCZTS/CZTSe short circuit current density is  20.98 mA/cm2 for current matched211.33 nm thick CZTS top cell in conjunction with 2000 nm bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 22, '%', 7],[136.0, 5, 'eV', 3],[12.0, 20.98, 'mA', 0],[44.0, 2000, 'nm', 0],[79.0, 21.7, '%', 1]

C
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74570, 74570)
 TheCZTS/CZTSe short circuit current density is  20.98 mA/cm2 for current matched211.33 nm thick CZTS top cell in conjunction with 2000 nm bottom cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 22, '%', 7],[166.0, 5, 'eV', 3],[18.0, 20.98, 'mA', 0],[14.0, 2000, 'nm', 0],[49.0, 21.7, '%', 1]

S
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74573, 74573)
 TheCZTS/CZTSe short circuit current density is  20.98 mA/cm2 for current matched211.33 nm thick CZTS top cell in conjunction with 2000 nm bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 22, '%', 7],[169.0, 5, 'eV', 3],[21.0, 20.98, 'mA', 0],[11.0, 2000, 'nm', 0],[46.0, 21.7, '%', 1]

V
###Simulation studies of CZT(S,Se) single and tandem junction solar cells towards possibilities for higher efficiencies up to 22%|Goutam K Gupta,Ambesh Dixit###
(74632, 74632)
 Themaximum efficiency obtained under the flat band condition at the contact is21.7% with open circuit voltage 1.324 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 22, '%', 8],[228.0, 5, 'eV', 4],[80.0, 20.98, 'mA', 1],[48.0, 2000, 'nm', 1],[13.0, 21.7, '%', 0]

CH3NH3PbI3
###Quantification of Ion Migration in CH3NH3PbI3 Perovskite Solar Cells by Transient Capacitance Measurements|Moritz H. Futscher,Ju Min Lee,Lucie McGovern,Loreta A. Muscarella,Tianyi Wang,Muhammad Irfan Haider,Azhar Fakharuddin,Lukas Schmidt-Mende,Bruno Ehrler###
(74653, 74661)
Quantification of Ion Migration in CH3NH3PbI3 Perovskite Solar Cells by Transient Capacitance Measurements.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Quantification of Ion Migration in CH3NH3PbI3 Perovskite Solar Cells by Transient Capacitance Measurements|Moritz H. Futscher,Ju Min Lee,Lucie McGovern,Loreta A. Muscarella,Tianyi Wang,Muhammad Irfan Haider,Azhar Fakharuddin,Lukas Schmidt-Mende,Bruno Ehrler###
(74804, 74805)
 We use transient ion-drift measurements toquantify activation energy, diffusion coefficient, and concentration of mobileions in methylammonium lead triiodide (M<missing VAR>APbI3) perovskite solar cells, and findthat their properties change close to the tetragonal-to-orthorhombic phasetransition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Quantification of Ion Migration in CH3NH3PbI3 Perovskite Solar Cells by Transient Capacitance Measurements|Moritz H. Futscher,Ju Min Lee,Lucie McGovern,Loreta A. Muscarella,Tianyi Wang,Muhammad Irfan Haider,Azhar Fakharuddin,Lukas Schmidt-Mende,Bruno Ehrler###
(74878, 74878)
 We identify three migrating ion species which weattribute to the migration of iodide (I-) and methylammonium (M<missing VAR>A+).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Quantification of Ion Migration in CH3NH3PbI3 Perovskite Solar Cells by Transient Capacitance Measurements|Moritz H. Futscher,Ju Min Lee,Lucie McGovern,Loreta A. Muscarella,Tianyi Wang,Muhammad Irfan Haider,Azhar Fakharuddin,Lukas Schmidt-Mende,Bruno Ehrler###
(74937, 74937)
 We findthat the concentration of mobile M<missing VAR>A+ ions is one order of magnitude higher thanthe one of mobile I- ions, and that the diffusion coefficient of mobile M<missing VAR>A+ions is three orders of magnitude lower than the one for mobile I- ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Quantification of Ion Migration in CH3NH3PbI3 Perovskite Solar Cells by Transient Capacitance Measurements|Moritz H. Futscher,Ju Min Lee,Lucie McGovern,Loreta A. Muscarella,Tianyi Wang,Muhammad Irfan Haider,Azhar Fakharuddin,Lukas Schmidt-Mende,Bruno Ehrler###
(74986, 74986)
 We findthat the concentration of mobile M<missing VAR>A+ ions is one order of magnitude higher thanthe one of mobile I- ions, and that the diffusion coefficient of mobile M<missing VAR>A+ions is three orders of magnitude lower than the one for mobile I- ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Quantification of Ion Migration in CH3NH3PbI3 Perovskite Solar Cells by Transient Capacitance Measurements|Moritz H. Futscher,Ju Min Lee,Lucie McGovern,Loreta A. Muscarella,Tianyi Wang,Muhammad Irfan Haider,Azhar Fakharuddin,Lukas Schmidt-Mende,Bruno Ehrler###
(75011, 75011)
 Wefurthermore observe that the activation energy of mobile I- ions (0.29 e<missing VAR>V) ishighly reproducible for different devices, while the activation energy ofmobile M<missing VAR>A+ depends strongly on device fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Quantification of Ion Migration in CH3NH3PbI3 Perovskite Solar Cells by Transient Capacitance Measurements|Moritz H. Futscher,Ju Min Lee,Lucie McGovern,Loreta A. Muscarella,Tianyi Wang,Muhammad Irfan Haider,Azhar Fakharuddin,Lukas Schmidt-Mende,Bruno Ehrler###
(75020, 75020)
 Wefurthermore observe that the activation energy of mobile I- ions (0.29 e<missing VAR>V) ishighly reproducible for different devices, while the activation energy ofmobile M<missing VAR>A+ depends strongly on device fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Quantification of Ion Migration in CH3NH3PbI3 Perovskite Solar Cells by Transient Capacitance Measurements|Moritz H. Futscher,Ju Min Lee,Lucie McGovern,Loreta A. Muscarella,Tianyi Wang,Muhammad Irfan Haider,Azhar Fakharuddin,Lukas Schmidt-Mende,Bruno Ehrler###
(75080, 75082)
 This quantification ofmobile ions in M<missing VAR>APbI3 will lead to a better understanding of ion migration andits role in operation and degradation of perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Experimental demonstration of ions induced electric field in perovskite solar cells|Zeguo Tang,Takashi Minemoto###
(75180, 75180)
 The anomalous hysteresis is reported in photo current density-voltage (J<missing VAR>-V)curves of perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Experimental demonstration of ions induced electric field in perovskite solar cells|Zeguo Tang,Takashi Minemoto###
(75352, 75352)
 the intrinsic perovskite layer issituated in an electric field built by p<missing VAR>-type (Spiro-OMeTAD) and n<missing VAR>-type (TiO2)layers, the poling process also works in such devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(TiO2)
###Experimental demonstration of ions induced electric field in perovskite solar cells|Zeguo Tang,Takashi Minemoto###
(75365, 75369)
 the intrinsic perovskite layer issituated in an electric field built by p<missing VAR>-type (Spiro-OMeTAD) and n<missing VAR>-type (TiO2)layers, the poling process also works in such devices.
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Experimental demonstration of ions induced electric field in perovskite solar cells|Zeguo Tang,Takashi Minemoto###
(75433, 75433)
 As a consequence, less collection of photogenerated carriers ispredicted due to the built-in electric field is partially screened.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Experimental demonstration of ions induced electric field in perovskite solar cells|Zeguo Tang,Takashi Minemoto###
(75541, 75541)
The anomalous hysteresis observed on J<missing VAR>-V curves is explained based on theinsight of ions migrations under bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Design of Lead-Free Inorganic Halide Perovskites for Solar Cells via Cation-Transmutation|Xin-Gang Zhao,Ji-Hui Yang,Yuhao Fu,Dongwen Yang,Qiaoling Xu,Liping Yu,Su-Huai Wei,Lijun Zhang###
(75719, 75727)
 Hybrid organic-inorganic halide perovskites with the prototype material ofCH3NH3PbI3 have recently attracted intense interest as low-costand high-performance photovoltaic absorbers.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 20, '%', 1]

Pb
###Design of Lead-Free Inorganic Halide Perovskites for Solar Cells via Cation-Transmutation|Xin-Gang Zhao,Ji-Hui Yang,Yuhao Fu,Dongwen Yang,Qiaoling Xu,Liping Yu,Su-Huai Wei,Lijun Zhang###
(75890, 75890)
 Here, we address these issues by exploiting thestrategy of cation-transmutation to design stable inorganic Pb-free halideperovskites for solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 20, '%', 1]

Pb
###Design of Lead-Free Inorganic Halide Perovskites for Solar Cells via Cation-Transmutation|Xin-Gang Zhao,Ji-Hui Yang,Yuhao Fu,Dongwen Yang,Qiaoling Xu,Liping Yu,Su-Huai Wei,Lijun Zhang###
(76092, 76092)
 Withphotovoltaic-functionality-directed materials screening, we identify elevenoptimal materials with intrinsic thermodynamic stability, suitable band gaps,small carrier effective masses, and low excitons binding energies as promisingcandidates to replace Pb-based photovoltaic absorbers in perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 20, '%', 4]

Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76182, 76182)
Ge virtual substrates for high efficiency III-V solar cells applications, potential and challenges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 5, 'um', 4]

III
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76194, 76196)
Ge virtual substrates for high efficiency III-V solar cells applications, potential and challenges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 5, 'um', 4]

V
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76198, 76198)
Ge virtual substrates for high efficiency III-V solar cells applications, potential and challenges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 5, 'um', 4]

Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76224, 76224)
 Virtual substrates based on thin Ge layers on Si by direct deposition haveachieved high quality recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 5, 'um', 3]

Si
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76230, 76230)
 Virtual substrates based on thin Ge layers on Si by direct deposition haveachieved high quality recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 5, 'um', 3]

III
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76260, 76262)
 Their application to high efficiency III-Vsolar cells is analyzed in this work.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 5, 'um', 2]

V
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76264, 76264)
 Their application to high efficiency III-Vsolar cells is analyzed in this work.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 5, 'um', 2]

Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76286, 76286)
 Replacing traditional Ge substrates withGe/Si virtual substrates in standard lattice-matched and upright metamorphicGaInP/Ga(In)As/Ge solar cells is feasible according to our calculations usingrealistic parameters of state-of-the-art Ge solar cells but with thin bases (<5um).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 5, 'um', 1]

Ge/Si
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76293, 76295)
 Replacing traditional Ge substrates withGe/Si virtual substrates in standard lattice-matched and upright metamorphicGaInP/Ga(In)As/Ge solar cells is feasible according to our calculations usingrealistic parameters of state-of-the-art Ge solar cells but with thin bases (<5um).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[152.0, 5, 'um', 1]

GaInP/Ga(In)As/Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76316, 76326)
 Replacing traditional Ge substrates withGe/Si virtual substrates in standard lattice-matched and upright metamorphicGaInP/Ga(In)As/Ge solar cells is feasible according to our calculations usingrealistic parameters of state-of-the-art Ge solar cells but with thin bases (<5um).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[121.0, 5, 'um', 1]

Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76361, 76361)
 Replacing traditional Ge substrates withGe/Si virtual substrates in standard lattice-matched and upright metamorphicGaInP/Ga(In)As/Ge solar cells is feasible according to our calculations usingrealistic parameters of state-of-the-art Ge solar cells but with thin bases (<5um).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 5, 'um', 1]

Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76400, 76400)
 The first experimental steps are tackled by implementing Gesingle-junction and full GaInP/Ga(In)As/Ge triple-junction solar cells onmedium quality Ge/Si virtual substrates with 5um thick Ge layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 5, 'um', 0]

GaInP/Ga(In)As/Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76411, 76421)
 The first experimental steps are tackled by implementing Gesingle-junction and full GaInP/Ga(In)As/Ge triple-junction solar cells onmedium quality Ge/Si virtual substrates with 5um thick Ge layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, 5, 'um', 0]

Ge/Si
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76438, 76440)
 The first experimental steps are tackled by implementing Gesingle-junction and full GaInP/Ga(In)As/Ge triple-junction solar cells onmedium quality Ge/Si virtual substrates with 5um thick Ge layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[7.0, 5, 'um', 0]

Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76451, 76451)
 The first experimental steps are tackled by implementing Gesingle-junction and full GaInP/Ga(In)As/Ge triple-junction solar cells onmedium quality Ge/Si virtual substrates with 5um thick Ge layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 5, 'um', 0]

Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76473, 76473)
 The resultsshow that the photocurrent in the Ge bottom cell is barely enough to achievecurrent matching with the upper subcells, but the overall performance is poordue to low voltages in the junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 5, 'um', 1]

Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76569, 76569)
 Moreover, observed cracks in thetriple-junction structure point to the need to reduce the thickness of the Ge +III-V structure or using other advanced approaches to mitigate the thermalexpansion coefficient mismatch effects, such as using embedded porous silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 5, 'um', 2]

III
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76574, 76576)
 Moreover, observed cracks in thetriple-junction structure point to the need to reduce the thickness of the Ge +III-V structure or using other advanced approaches to mitigate the thermalexpansion coefficient mismatch effects, such as using embedded porous silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 5, 'um', 2]

V
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76578, 76578)
 Moreover, observed cracks in thetriple-junction structure point to the need to reduce the thickness of the Ge +III-V structure or using other advanced approaches to mitigate the thermalexpansion coefficient mismatch effects, such as using embedded porous silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 5, 'um', 2]

Ge/Si
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76646, 76648)
Next experimental work will pursue this objective and use more advanced Ge/Sivirtual substrates available with lower threading dislocation densities anddifferent Ge thicknesses.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[199.0, 5, 'um', 3]

Ge
###Ge virtual substrates for high efficiency III-V solar cells: applications, potential and challenges|Iván García,Manuel Hinojosa,Iván Lombardero,Luis Cifuentes,Ignacio Rey-Stolle,Carlos Algora,Huy Nguyen,Stuart Edwards,Aled Morgan,Andrew Johnson###
(76672, 76672)
Next experimental work will pursue this objective and use more advanced Ge/Sivirtual substrates available with lower threading dislocation densities anddifferent Ge thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 5, 'um', 3]

Si
###Glass engineering to enhance Si solar cells: a case study of Pr$^{3+}$-Yb$^{3+}$ codoped tellurite-tungstate as spectral converter|Maiara Mitiko Taniguchi,Vitor Santaella Zanuto,Pablo Portes,Luis Carlos Malacarne,Nelson Guilherme Astrath,Jorge Diego Marconi,Marcos Paulo Belançon###
(76693, 76693)
Glass engineering to enhance Si solar cells a case study of Pr3+-Yb3+ codoped tellurite-tungstate as spectral converter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Glass engineering to enhance Si solar cells: a case study of Pr$^{3+}$-Yb$^{3+}$ codoped tellurite-tungstate as spectral converter|Maiara Mitiko Taniguchi,Vitor Santaella Zanuto,Pablo Portes,Luis Carlos Malacarne,Nelson Guilherme Astrath,Jorge Diego Marconi,Marcos Paulo Belançon###
(76851, 76851)
 Here we present a detailed spectroscopicstudy of photoluminescence in tellurite-tungstate glasses doped and codopedwith Pr3+-Yb3+ and Ag nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F5
###Glass engineering to enhance Si solar cells: a case study of Pr$^{3+}$-Yb$^{3+}$ codoped tellurite-tungstate as spectral converter|Maiara Mitiko Taniguchi,Vitor Santaella Zanuto,Pablo Portes,Luis Carlos Malacarne,Nelson Guilherme Astrath,Jorge Diego Marconi,Marcos Paulo Belançon###
(76934, 76935)
 Fluorescence quenching of 2 F5/2 level ofYb3+ is observed by increasing the concentration of Pr3+, as well asby the addition of Ag nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Glass engineering to enhance Si solar cells: a case study of Pr$^{3+}$-Yb$^{3+}$ codoped tellurite-tungstate as spectral converter|Maiara Mitiko Taniguchi,Vitor Santaella Zanuto,Pablo Portes,Luis Carlos Malacarne,Nelson Guilherme Astrath,Jorge Diego Marconi,Marcos Paulo Belançon###
(76982, 76982)
 Fluorescence quenching of 2 F5/2 level ofYb3+ is observed by increasing the concentration of Pr3+, as well asby the addition of Ag nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Glass engineering to enhance Si solar cells: a case study of Pr$^{3+}$-Yb$^{3+}$ codoped tellurite-tungstate as spectral converter|Maiara Mitiko Taniguchi,Vitor Santaella Zanuto,Pablo Portes,Luis Carlos Malacarne,Nelson Guilherme Astrath,Jorge Diego Marconi,Marcos Paulo Belançon###
(76987, 76987)
 In addition, a discussion on thepotential of this glass to increase energy production in spectral converters ispresented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UV
###Glass engineering to enhance Si solar cells: a case study of Pr$^{3+}$-Yb$^{3+}$ codoped tellurite-tungstate as spectral converter|Maiara Mitiko Taniguchi,Vitor Santaella Zanuto,Pablo Portes,Luis Carlos Malacarne,Nelson Guilherme Astrath,Jorge Diego Marconi,Marcos Paulo Belançon###
(77189, 77190)
The focus on extending the lifespan by reducing UV induced degradation seems tobe a more effective approach than the development of spectral converters for Sisolar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Glass engineering to enhance Si solar cells: a case study of Pr$^{3+}$-Yb$^{3+}$ codoped tellurite-tungstate as spectral converter|Maiara Mitiko Taniguchi,Vitor Santaella Zanuto,Pablo Portes,Luis Carlos Malacarne,Nelson Guilherme Astrath,Jorge Diego Marconi,Marcos Paulo Belançon###
(77225, 77225)
The focus on extending the lifespan by reducing UV induced degradation seems tobe a more effective approach than the development of spectral converters for Sisolar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77265, 77266)
 Silicon heterojunction (SHJ) solar cells represent a promising technologicalapproach towards higher photovoltaics efficiencies and lower fabrication cost.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 1.2, 'V', 3]

SH
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77313, 77314)
While the device physics of SHJ<missing VAR> solar cells have been studied extensively inthe past, the ways in which nanoscopic electronic processes such ascharge-carrier generation, recombination, trapping, and percolation affect SHJ<missing VAR>device properties macroscopically have yet to be fully understood.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 1.2, 'V', 2]

SH
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77375, 77376)
While the device physics of SHJ<missing VAR> solar cells have been studied extensively inthe past, the ways in which nanoscopic electronic processes such ascharge-carrier generation, recombination, trapping, and percolation affect SHJ<missing VAR>device properties macroscopically have yet to be fully understood.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 1.2, 'V', 2]

SiH
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77430, 77431)
 We reportthe study of atomic scale current percolation at state-of-the-art a-SiH/c<missing VAR>-Siheterojunction solar cells under ambient operating conditions, revealing theprofound complexity of electronic SHJ<missing VAR> interface processes.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 1.2, 'V', 1]

Si
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77435, 77435)
 We reportthe study of atomic scale current percolation at state-of-the-art a-SiH/c<missing VAR>-Siheterojunction solar cells under ambient operating conditions, revealing theprofound complexity of electronic SHJ<missing VAR> interface processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1.2, 'V', 1]

SH
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77466, 77467)
 We reportthe study of atomic scale current percolation at state-of-the-art a-SiH/c<missing VAR>-Siheterojunction solar cells under ambient operating conditions, revealing theprofound complexity of electronic SHJ<missing VAR> interface processes.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1.2, 'V', 1]

F
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77489, 77489)
 Using conductionatomic force microscopy (c<missing VAR>AFM), it is shown that the macroscopiccurrent-voltage characteristics of SHJ<missing VAR> solar cells is governed by the averageof local nanometer-sized percolation pathways associated with bandtail statesof the doped a-SiH selective contact leading to above bandgap open circuitvoltages (VmboxOC) as high as 1.2 V (VmboxOC>e<missing VAR>E<missing VAR>mboxgapmboxSi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 1.2, 'V', 0]

SH
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77515, 77516)
 Using conductionatomic force microscopy (c<missing VAR>AFM), it is shown that the macroscopiccurrent-voltage characteristics of SHJ<missing VAR> solar cells is governed by the averageof local nanometer-sized percolation pathways associated with bandtail statesof the doped a-SiH selective contact leading to above bandgap open circuitvoltages (VmboxOC) as high as 1.2 V (VmboxOC>e<missing VAR>E<missing VAR>mboxgapmboxSi).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.2, 'V', 0]

SiH
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77563, 77564)
 Using conductionatomic force microscopy (c<missing VAR>AFM), it is shown that the macroscopiccurrent-voltage characteristics of SHJ<missing VAR> solar cells is governed by the averageof local nanometer-sized percolation pathways associated with bandtail statesof the doped a-SiH selective contact leading to above bandgap open circuitvoltages (VmboxOC) as high as 1.2 V (VmboxOC>e<missing VAR>E<missing VAR>mboxgapmboxSi).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 1.2, 'V', 0]

V
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77586, 77586)
 Using conductionatomic force microscopy (c<missing VAR>AFM), it is shown that the macroscopiccurrent-voltage characteristics of SHJ<missing VAR> solar cells is governed by the averageof local nanometer-sized percolation pathways associated with bandtail statesof the doped a-SiH selective contact leading to above bandgap open circuitvoltages (VmboxOC) as high as 1.2 V (VmboxOC>e<missing VAR>E<missing VAR>mboxgapmboxSi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1.2, 'V', 0]

C
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77589, 77589)
 Using conductionatomic force microscopy (c<missing VAR>AFM), it is shown that the macroscopiccurrent-voltage characteristics of SHJ<missing VAR> solar cells is governed by the averageof local nanometer-sized percolation pathways associated with bandtail statesof the doped a-SiH selective contact leading to above bandgap open circuitvoltages (VmboxOC) as high as 1.2 V (VmboxOC>e<missing VAR>E<missing VAR>mboxgapmboxSi).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1.2, 'V', 0]

V
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77600, 77600)
 Using conductionatomic force microscopy (c<missing VAR>AFM), it is shown that the macroscopiccurrent-voltage characteristics of SHJ<missing VAR> solar cells is governed by the averageof local nanometer-sized percolation pathways associated with bandtail statesof the doped a-SiH selective contact leading to above bandgap open circuitvoltages (VmboxOC) as high as 1.2 V (VmboxOC>e<missing VAR>E<missing VAR>mboxgapmboxSi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1.2, 'V', 0]

OC
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77602, 77603)
 Using conductionatomic force microscopy (c<missing VAR>AFM), it is shown that the macroscopiccurrent-voltage characteristics of SHJ<missing VAR> solar cells is governed by the averageof local nanometer-sized percolation pathways associated with bandtail statesof the doped a-SiH selective contact leading to above bandgap open circuitvoltages (VmboxOC) as high as 1.2 V (VmboxOC>e<missing VAR>E<missing VAR>mboxgapmboxSi).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1.2, 'V', 0]

Si
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77612, 77612)
 Using conductionatomic force microscopy (c<missing VAR>AFM), it is shown that the macroscopiccurrent-voltage characteristics of SHJ<missing VAR> solar cells is governed by the averageof local nanometer-sized percolation pathways associated with bandtail statesof the doped a-SiH selective contact leading to above bandgap open circuitvoltages (VmboxOC) as high as 1.2 V (VmboxOC>e<missing VAR>E<missing VAR>mboxgapmboxSi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1.2, 'V', 0]

SiH
###Imaging of bandtail states in silicon heterojunction solar cells|M. Y. Teferi,H. Malissa,A. B. Morales-Vilches,C. T. Trinh,L. Korte,B. Stannowski,C. C. Williams,C. Boehme,K. Lips###
(77721, 77722)
 We show that the broad distribution of local photovoltage is a directconsequence of randomly trapped charges at a-SiH dangling bond defects whichlead to strong local potential fluctuations and induce random telegraph noiseof the dark current.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 1.2, 'V', 2]

Cu2ZnSnS4
###Non-destructive determination of phase, size, and strain of individual grains in polycrystalline photovoltaic materials|Mariana Mar Lucas,Tiago Ramos,Peter S. Jørgensen,Stela Canulescu,Peter Kenesei,Jonathan Wright,Henning F. Poulsen,Jens W. Andreasen###
(77934, 77939)
Specifically, we present a comprehensive study of 597 grains in the absorberlayer of a 1.64% efficient Cu2ZnSnS4 (CZTS) thin-film solar cell, from which 15grains correspond to the secondary phase ZnS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 597, 'grains', 0],[5.0, 1.64, '%', 0],[140.0, 70, 'MPa', 2],[165.0, 145, 'MPa', 2],[183.0, 3, 'D', 3],[213.0, 41, '%', 4],[267.0, 221, '>', 5]

C
###Non-destructive determination of phase, size, and strain of individual grains in polycrystalline photovoltaic materials|Mariana Mar Lucas,Tiago Ramos,Peter S. Jørgensen,Stela Canulescu,Peter Kenesei,Jonathan Wright,Henning F. Poulsen,Jens W. Andreasen###
(77942, 77942)
Specifically, we present a comprehensive study of 597 grains in the absorberlayer of a 1.64% efficient Cu2ZnSnS4 (CZTS) thin-film solar cell, from which 15grains correspond to the secondary phase ZnS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 597, 'grains', 0],[13.0, 1.64, '%', 0],[137.0, 70, 'MPa', 2],[162.0, 145, 'MPa', 2],[180.0, 3, 'D', 3],[210.0, 41, '%', 4],[264.0, 221, '>', 5]

S
###Non-destructive determination of phase, size, and strain of individual grains in polycrystalline photovoltaic materials|Mariana Mar Lucas,Tiago Ramos,Peter S. Jørgensen,Stela Canulescu,Peter Kenesei,Jonathan Wright,Henning F. Poulsen,Jens W. Andreasen###
(77945, 77945)
Specifically, we present a comprehensive study of 597 grains in the absorberlayer of a 1.64% efficient Cu2ZnSnS4 (CZTS) thin-film solar cell, from which 15grains correspond to the secondary phase ZnS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 597, 'grains', 0],[16.0, 1.64, '%', 0],[134.0, 70, 'MPa', 2],[159.0, 145, 'MPa', 2],[177.0, 3, 'D', 3],[207.0, 41, '%', 4],[261.0, 221, '>', 5]

ZnS
###Non-destructive determination of phase, size, and strain of individual grains in polycrystalline photovoltaic materials|Mariana Mar Lucas,Tiago Ramos,Peter S. Jørgensen,Stela Canulescu,Peter Kenesei,Jonathan Wright,Henning F. Poulsen,Jens W. Andreasen###
(77976, 77977)
Specifically, we present a comprehensive study of 597 grains in the absorberlayer of a 1.64% efficient Cu2ZnSnS4 (CZTS) thin-film solar cell, from which 15grains correspond to the secondary phase ZnS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 597, 'grains', 0],[47.0, 1.64, '%', 0],[102.0, 70, 'MPa', 2],[127.0, 145, 'MPa', 2],[145.0, 3, 'D', 3],[175.0, 41, '%', 4],[229.0, 221, '>', 5]

At
###Non-destructive determination of phase, size, and strain of individual grains in polycrystalline photovoltaic materials|Mariana Mar Lucas,Tiago Ramos,Peter S. Jørgensen,Stela Canulescu,Peter Kenesei,Jonathan Wright,Henning F. Poulsen,Jens W. Andreasen###
(78107, 78107)
 At the grainlevel, we derive a 3D stress tensor that deviates from the biaxial modelusually assumed for thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 597, 'grains', 3],[178.0, 1.64, '%', 3],[28.0, 70, 'MPa', 1],[3.0, 145, 'MPa', 1],[15.0, 3, 'D', 0],[45.0, 41, '%', 1],[99.0, 221, '>', 2]

In
###Energetics and Kinetics Requirements for Organic Solar Cells to 2 Break the 20% Power Conversion Efficiency Barrier|Oskar J Sandberg,Ardalan Armin###
(78377, 78377)
 In case of organicsolar cells both energetics and kinetics of three different species play roleexcitons, charge transfer states and charge separated states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2, 'Break', 2],[54.0, 20, '%', 2]

In
###Energetics and Kinetics Requirements for Organic Solar Cells to 2 Break the 20% Power Conversion Efficiency Barrier|Oskar J Sandberg,Ardalan Armin###
(78429, 78429)
 In this work, weclarify the effect of the relative energetics and kinetics of these species onthe recombination and generation dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'Break', 3],[106.0, 20, '%', 3]

C
###Energetics and Kinetics Requirements for Organic Solar Cells to 2 Break the 20% Power Conversion Efficiency Barrier|Oskar J Sandberg,Ardalan Armin###
(78575, 78575)
 Furthermore, we clarifythe essential requirements for equilibrium between excitons, CT<missing VAR> states andcharge carriers to occur.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 2, 'Break', 5],[252.0, 20, '%', 5]

AlSb
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(78711, 78712)
Theoretical simulation and design of AlSb thin films solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 500, 'nm', 3],[332.0, 10.6, '%', 4],[336.0, 15.3, '%', 4],[453.0, 100, 'nm', 5]

AlSb
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(78742, 78743)
 The effects of thickness, doping concentration and recombination of AlSbfilms on the performance of CdS/AlSb cells are simulated by one dimensionalsimulation program called analysis of microelectronic and photonicstructures(AM<missing VAR>PS1D) soft ware to understand the influence of materialcharacteristic (such as carrier concentration and thickness) on the solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 500, 'nm', 2],[301.0, 10.6, '%', 3],[305.0, 15.3, '%', 3],[422.0, 100, 'nm', 4]

CdS/AlSb
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(78756, 78760)
 The effects of thickness, doping concentration and recombination of AlSbfilms on the performance of CdS/AlSb cells are simulated by one dimensionalsimulation program called analysis of microelectronic and photonicstructures(AM<missing VAR>PS1D) soft ware to understand the influence of materialcharacteristic (such as carrier concentration and thickness) on the solarcells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[264.0, 500, 'nm', 2],[284.0, 10.6, '%', 3],[288.0, 15.3, '%', 3],[405.0, 100, 'nm', 4]

PS1
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(78796, 78798)
 The effects of thickness, doping concentration and recombination of AlSbfilms on the performance of CdS/AlSb cells are simulated by one dimensionalsimulation program called analysis of microelectronic and photonicstructures(AM<missing VAR>PS1D) soft ware to understand the influence of materialcharacteristic (such as carrier concentration and thickness) on the solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 500, 'nm', 2],[246.0, 10.6, '%', 3],[250.0, 15.3, '%', 3],[367.0, 100, 'nm', 4]

CdS/AlSb
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(78859, 78863)
 The methods to improve the performance of CdS/AlSb cells by optimizingthe properties of AlSb have been found.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[161.0, 500, 'nm', 1],[181.0, 10.6, '%', 2],[185.0, 15.3, '%', 2],[302.0, 100, 'nm', 3]

AlSb
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(78878, 78879)
 The methods to improve the performance of CdS/AlSb cells by optimizingthe properties of AlSb have been found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 500, 'nm', 1],[165.0, 10.6, '%', 2],[169.0, 15.3, '%', 2],[286.0, 100, 'nm', 3]

AlSb
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(78900, 78901)
 The results show that the thicker AlSbfilm can improve the long wave response for the higher short-circuit currentdensity (Jsc ) of CdS/AlSb solar cells and the higher carrier concentration ofthe film can improve open-circuit voltage (Voc ) and fill factor (FF), and itsoptical thickness for CdS/AlSb solar cells is in the range of 500nm2000nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 500, 'nm', 0],[143.0, 10.6, '%', 1],[147.0, 15.3, '%', 1],[264.0, 100, 'nm', 2]

CdS/AlSb
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(78940, 78944)
 The results show that the thicker AlSbfilm can improve the long wave response for the higher short-circuit currentdensity (Jsc ) of CdS/AlSb solar cells and the higher carrier concentration ofthe film can improve open-circuit voltage (Voc ) and fill factor (FF), and itsoptical thickness for CdS/AlSb solar cells is in the range of 500nm2000nm.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[80.0, 500, 'nm', 0],[100.0, 10.6, '%', 1],[104.0, 15.3, '%', 1],[221.0, 100, 'nm', 2]

(FF)
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(78988, 78991)
 The results show that the thicker AlSbfilm can improve the long wave response for the higher short-circuit currentdensity (Jsc ) of CdS/AlSb solar cells and the higher carrier concentration ofthe film can improve open-circuit voltage (Voc ) and fill factor (FF), and itsoptical thickness for CdS/AlSb solar cells is in the range of 500nm2000nm.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 500, 'nm', 0],[53.0, 10.6, '%', 1],[57.0, 15.3, '%', 1],[174.0, 100, 'nm', 2]

CdS/AlSb
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(79005, 79009)
 The results show that the thicker AlSbfilm can improve the long wave response for the higher short-circuit currentdensity (Jsc ) of CdS/AlSb solar cells and the higher carrier concentration ofthe film can improve open-circuit voltage (Voc ) and fill factor (FF), and itsoptical thickness for CdS/AlSb solar cells is in the range of 500nm2000nm.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[15.0, 500, 'nm', 0],[35.0, 10.6, '%', 1],[39.0, 15.3, '%', 1],[156.0, 100, 'nm', 2]

AlSbTe
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(79056, 79058)
 Theconversion efficiency can be improved from 10.6% to15.3% for introducingAlSbTe, AlSbCu and ZnTeCu thin films to CdS/ AlSb structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 500, 'nm', 1],[12.0, 10.6, '%', 0],[8.0, 15.3, '%', 0],[107.0, 100, 'nm', 1]

AlSbCu
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(79061, 79063)
 Theconversion efficiency can be improved from 10.6% to15.3% for introducingAlSbTe, AlSbCu and ZnTeCu thin films to CdS/ AlSb structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 500, 'nm', 1],[17.0, 10.6, '%', 0],[13.0, 15.3, '%', 0],[102.0, 100, 'nm', 1]

ZnTeCu
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(79067, 79069)
 Theconversion efficiency can be improved from 10.6% to15.3% for introducingAlSbTe, AlSbCu and ZnTeCu thin films to CdS/ AlSb structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 500, 'nm', 1],[23.0, 10.6, '%', 0],[19.0, 15.3, '%', 0],[96.0, 100, 'nm', 1]

CdS
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(79077, 79078)
 Theconversion efficiency can be improved from 10.6% to15.3% for introducingAlSbTe, AlSbCu and ZnTeCu thin films to CdS/ AlSb structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 500, 'nm', 1],[33.0, 10.6, '%', 0],[29.0, 15.3, '%', 0],[87.0, 100, 'nm', 1]

AlSb
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(79081, 79082)
 Theconversion efficiency can be improved from 10.6% to15.3% for introducingAlSbTe, AlSbCu and ZnTeCu thin films to CdS/ AlSb structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 500, 'nm', 1],[37.0, 10.6, '%', 0],[33.0, 15.3, '%', 0],[83.0, 100, 'nm', 1]

AlSbTe
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(79095, 79097)
 Furthermore,the thicker AlSbTe film can improve the short wave response for the higher Jscof the cells, and its optical thickness CdS/AlSbTe/AlSb/ZnTeCu solar cells isin the range of 100nm200nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 500, 'nm', 2],[51.0, 10.6, '%', 1],[47.0, 15.3, '%', 1],[68.0, 100, 'nm', 0]

CdS/AlSbTe/AlSb/ZnTeCu
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(79137, 79149)
 Furthermore,the thicker AlSbTe film can improve the short wave response for the higher Jscof the cells, and its optical thickness CdS/AlSbTe/AlSb/ZnTeCu solar cells isin the range of 100nm200nm.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[113.0, 500, 'nm', 2],[93.0, 10.6, '%', 1],[89.0, 15.3, '%', 1],[16.0, 100, 'nm', 0]

FF
###Theoretical simulation and design of AlSb thin films solar cells|Huijin Song,Zilong Wang,Jingwen Wang,Qiang Yan,Kai Xia,Xiangfeng Deng,Minqiang Li###
(79189, 79190)
 And the lower doping concentration can promote Vocand FF to improve the characteristic of the cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 500, 'nm', 3],[145.0, 10.6, '%', 2],[141.0, 15.3, '%', 2],[24.0, 100, 'nm', 1]

F
###Effect of plasmonic Aluminum nanoparticles shapes on optical absorption enhancement in silicon thin-film solar cells|Maedeh Rassekh,Reza Shirmohammadi,Roghayeh Ghasempour,Fatemeh Razi Astaraei,Saber Farjami Shayesteh###
(79408, 79408)
 Here we investigate, using the FiniteDifference Time Domain (FDTD) method, how different shapes of aluminumnanoparticles affect absorption enhancement in silicon thin-film solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 30, '%', 1]

Se
###Anomaly segmentation model for defects detection in electroluminescence images of heterojunction solar cells|Alexey Korovin,Artem Vasilyev,Fedor Egorov,Dmitry Saykin,Evgeny Terukov,Igor Shakhray,Leonid Zhukov,Semen Budennyy###
(79713, 79713)
 This paper presents adeep-learning-based automatic detection model SeMaCNN for classification andsemantic segmentation of electroluminescent images for solar cell qualityevaluation and anomalies detection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 92.5, '%', 4],[218.0, 95.8, '%', 4],[224.0, 94.8, '%', 4],[233.0, 96.9, '%', 4],[247.0, 1049, 'manually', 4],[291.0, 94.6, '%', 5],[301.0, 91.1, '%', 5]

CNN
###Anomaly segmentation model for defects detection in electroluminescence images of heterojunction solar cells|Alexey Korovin,Artem Vasilyev,Fedor Egorov,Dmitry Saykin,Evgeny Terukov,Igor Shakhray,Leonid Zhukov,Semen Budennyy###
(79715, 79717)
 This paper presents adeep-learning-based automatic detection model SeMaCNN for classification andsemantic segmentation of electroluminescent images for solar cell qualityevaluation and anomalies detection.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 92.5, '%', 4],[214.0, 95.8, '%', 4],[220.0, 94.8, '%', 4],[229.0, 96.9, '%', 4],[243.0, 1049, 'manually', 4],[287.0, 94.6, '%', 5],[297.0, 91.1, '%', 5]

F1
###Anomaly segmentation model for defects detection in electroluminescence images of heterojunction solar cells|Alexey Korovin,Artem Vasilyev,Fedor Egorov,Dmitry Saykin,Evgeny Terukov,Igor Shakhray,Leonid Zhukov,Semen Budennyy###
(79926, 79927)
 Ourmodel achieves the accuracy of 92.5%, F1 score 95.8%, recall 94.8%, andprecision 96.9% within the validation subset consisting of 1049 manuallyannotated images.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 92.5, '%', 0],[4.0, 95.8, '%', 0],[10.0, 94.8, '%', 0],[19.0, 96.9, '%', 0],[33.0, 1049, 'manually', 0],[77.0, 94.6, '%', 1],[87.0, 91.1, '%', 1]

PV
###Anomaly segmentation model for defects detection in electroluminescence images of heterojunction solar cells|Alexey Korovin,Artem Vasilyev,Fedor Egorov,Dmitry Saykin,Evgeny Terukov,Igor Shakhray,Leonid Zhukov,Semen Budennyy###
(79986, 79987)
 The model was also tested on the open ELPV dataset anddemonstrates stable performance with accuracy 94.6% and F1 score 91.1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 92.5, '%', 1],[55.0, 95.8, '%', 1],[49.0, 94.8, '%', 1],[40.0, 96.9, '%', 1],[26.0, 1049, 'manually', 1],[17.0, 94.6, '%', 0],[27.0, 91.1, '%', 0]

F1
###Anomaly segmentation model for defects detection in electroluminescence images of heterojunction solar cells|Alexey Korovin,Artem Vasilyev,Fedor Egorov,Dmitry Saykin,Evgeny Terukov,Igor Shakhray,Leonid Zhukov,Semen Budennyy###
(80009, 80010)
 The model was also tested on the open ELPV dataset anddemonstrates stable performance with accuracy 94.6% and F1 score 91.1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 92.5, '%', 1],[78.0, 95.8, '%', 1],[72.0, 94.8, '%', 1],[63.0, 96.9, '%', 1],[49.0, 1049, 'manually', 1],[5.0, 94.6, '%', 0],[4.0, 91.1, '%', 0]

Se
###Anomaly segmentation model for defects detection in electroluminescence images of heterojunction solar cells|Alexey Korovin,Artem Vasilyev,Fedor Egorov,Dmitry Saykin,Evgeny Terukov,Igor Shakhray,Leonid Zhukov,Semen Budennyy###
(80021, 80021)
 TheSeMaCNN model demonstrates a good balance between its performance andcomputational costs, which make it applicable for integrating into qualitycontrol systems of solar cell manufacturing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 92.5, '%', 2],[90.0, 95.8, '%', 2],[84.0, 94.8, '%', 2],[75.0, 96.9, '%', 2],[61.0, 1049, 'manually', 2],[17.0, 94.6, '%', 1],[7.0, 91.1, '%', 1]

CNN
###Anomaly segmentation model for defects detection in electroluminescence images of heterojunction solar cells|Alexey Korovin,Artem Vasilyev,Fedor Egorov,Dmitry Saykin,Evgeny Terukov,Igor Shakhray,Leonid Zhukov,Semen Budennyy###
(80023, 80025)
 TheSeMaCNN model demonstrates a good balance between its performance andcomputational costs, which make it applicable for integrating into qualitycontrol systems of solar cell manufacturing.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 92.5, '%', 2],[92.0, 95.8, '%', 2],[86.0, 94.8, '%', 2],[77.0, 96.9, '%', 2],[63.0, 1049, 'manually', 2],[19.0, 94.6, '%', 1],[9.0, 91.1, '%', 1]

III
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80101, 80103)
Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 16, 'mm', 3],[150.0, 3.5, 'um', 3],[171.0, 10, 'ns', 3],[283.0, 0.1, 'cm', 5],[322.0, 1.07, 'V', 5]

V
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80105, 80105)
Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 16, 'mm', 3],[148.0, 3.5, 'um', 3],[169.0, 10, 'ns', 3],[281.0, 0.1, 'cm', 5],[320.0, 1.07, 'V', 5]

GaAs
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80113, 80114)
Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 16, 'mm', 3],[139.0, 3.5, 'um', 3],[160.0, 10, 'ns', 3],[272.0, 0.1, 'cm', 5],[311.0, 1.07, 'V', 5]

III
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80132, 80134)
 Like many optoelectronics, the highest quality III-V solar cells start out asthin single-crystalline multilayers on GaAs substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 16, 'mm', 2],[119.0, 3.5, 'um', 2],[140.0, 10, 'ns', 2],[252.0, 0.1, 'cm', 4],[291.0, 1.07, 'V', 4]

V
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80136, 80136)
 Like many optoelectronics, the highest quality III-V solar cells start out asthin single-crystalline multilayers on GaAs substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 16, 'mm', 2],[117.0, 3.5, 'um', 2],[138.0, 10, 'ns', 2],[250.0, 0.1, 'cm', 4],[289.0, 1.07, 'V', 4]

GaAs
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80159, 80160)
 Like many optoelectronics, the highest quality III-V solar cells start out asthin single-crystalline multilayers on GaAs substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 16, 'mm', 2],[93.0, 3.5, 'um', 2],[114.0, 10, 'ns', 2],[226.0, 0.1, 'cm', 4],[265.0, 1.07, 'V', 4]

III
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80210, 80212)
 Separating these devicelayers from their growth substrate enables higher performing devices and waferreuse, both of which are critical for III-V solar cell viability in aterrestrial market.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 16, 'mm', 1],[41.0, 3.5, 'um', 1],[62.0, 10, 'ns', 1],[174.0, 0.1, 'cm', 3],[213.0, 1.07, 'V', 3]

V
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80214, 80214)
 Separating these devicelayers from their growth substrate enables higher performing devices and waferreuse, both of which are critical for III-V solar cell viability in aterrestrial market.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 16, 'mm', 1],[39.0, 3.5, 'um', 1],[60.0, 10, 'ns', 1],[172.0, 0.1, 'cm', 3],[211.0, 1.07, 'V', 3]

GaAs
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80257, 80258)
 Here, we remove rigidly-bonded, lattice-matched, 16 mm2x<missing VAR> 3.5 um thick GaAs devices off a GaAs substrate using a 10 ns, unfocusedNdYAG<missing VAR> laser pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 16, 'mm', 0],[4.0, 3.5, 'um', 0],[16.0, 10, 'ns', 0],[128.0, 0.1, 'cm', 2],[167.0, 1.07, 'V', 2]

GaAs
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80266, 80267)
 Here, we remove rigidly-bonded, lattice-matched, 16 mm2x<missing VAR> 3.5 um thick GaAs devices off a GaAs substrate using a 10 ns, unfocusedNdYAG<missing VAR> laser pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 16, 'mm', 0],[13.0, 3.5, 'um', 0],[7.0, 10, 'ns', 0],[119.0, 0.1, 'cm', 2],[158.0, 1.07, 'V', 2]

NdY
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80280, 80281)
 Here, we remove rigidly-bonded, lattice-matched, 16 mm2x<missing VAR> 3.5 um thick GaAs devices off a GaAs substrate using a 10 ns, unfocusedNdYAG<missing VAR> laser pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 16, 'mm', 0],[27.0, 3.5, 'um', 0],[6.0, 10, 'ns', 0],[105.0, 0.1, 'cm', 2],[144.0, 1.07, 'V', 2]

W
###Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates|Benjamin A. Reeves,Myles A. Steiner,Thomas E. Carver,Ze Zhang,Aaron M. Lindenberg,Bruce M. Clemens###
(80440, 80440)
 After minutes of selective wet-chemical etching and front contactdeposition, our champion 0.1 cm2 device showed a (17.4 +/- 0.5) % powerconversion efficiency and an open-circuit voltage of 1.07 V, using AM<missing VAR>1.5 direct(1000 W m<missing VAR>-2) with no anti-reflection coating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 16, 'mm', 2],[187.0, 3.5, 'um', 2],[166.0, 10, 'ns', 2],[54.0, 0.1, 'cm', 0],[15.0, 1.07, 'V', 0]

C
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80598, 80598)
Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p<missing VAR>-CELIV).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80602, 80602)
Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p<missing VAR>-CELIV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80808, 80808)
 Our setup is based on theintegration of photogenerated charge extraction by linearly increasing voltage(p<missing VAR>-CELIV) with a scanning confocal optical microscope (SCOM) towards across-sectional sensitive p<missing VAR>-CELIV (cs-p<missing VAR>-CELIV) system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80812, 80812)
 Our setup is based on theintegration of photogenerated charge extraction by linearly increasing voltage(p<missing VAR>-CELIV) with a scanning confocal optical microscope (SCOM) towards across-sectional sensitive p<missing VAR>-CELIV (cs-p<missing VAR>-CELIV) system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCO
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80828, 80830)
 Our setup is based on theintegration of photogenerated charge extraction by linearly increasing voltage(p<missing VAR>-CELIV) with a scanning confocal optical microscope (SCOM) towards across-sectional sensitive p<missing VAR>-CELIV (cs-p<missing VAR>-CELIV) system.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80847, 80847)
 Our setup is based on theintegration of photogenerated charge extraction by linearly increasing voltage(p<missing VAR>-CELIV) with a scanning confocal optical microscope (SCOM) towards across-sectional sensitive p<missing VAR>-CELIV (cs-p<missing VAR>-CELIV) system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IV
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80850, 80851)
 Our setup is based on theintegration of photogenerated charge extraction by linearly increasing voltage(p<missing VAR>-CELIV) with a scanning confocal optical microscope (SCOM) towards across-sectional sensitive p<missing VAR>-CELIV (cs-p<missing VAR>-CELIV) system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80858, 80858)
 Our setup is based on theintegration of photogenerated charge extraction by linearly increasing voltage(p<missing VAR>-CELIV) with a scanning confocal optical microscope (SCOM) towards across-sectional sensitive p<missing VAR>-CELIV (cs-p<missing VAR>-CELIV) system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80862, 80862)
 Our setup is based on theintegration of photogenerated charge extraction by linearly increasing voltage(p<missing VAR>-CELIV) with a scanning confocal optical microscope (SCOM) towards across-sectional sensitive p<missing VAR>-CELIV (cs-p<missing VAR>-CELIV) system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80868, 80868)
 As geminaterecombination of excess carriers is the most frequent radiative pathway forelectrons and holes in solar cells at low power density of illumination, whilenongeminate recombination dominates at high power, enhanced nongeminaterecombination occurs at the SCOM<missing VAR> focal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCO
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80950, 80952)
 As geminaterecombination of excess carriers is the most frequent radiative pathway forelectrons and holes in solar cells at low power density of illumination, whilenongeminate recombination dominates at high power, enhanced nongeminaterecombination occurs at the SCOM<missing VAR> focal plane.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80969, 80969)
 Thus, the cs-p<missing VAR>-CELIV signalprovides enhanced information on the mobility of all of the cross-sectionallayers, except for the focal plane.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IV
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(80972, 80973)
 Thus, the cs-p<missing VAR>-CELIV signalprovides enhanced information on the mobility of all of the cross-sectionallayers, except for the focal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(81091, 81091)
 To demonstrate our technique, weuse it to investigate the carrier mobility in a hydrogenated amorphous silicon(a-SiH) solar cell.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(81113, 81113)
 The mobility profile obtained by cs-p<missing VAR>-CELIV correlateswell with the H content profile, measured independently, and is in excellentagreement with models suggesting a critical role of Si-H bonding in locallydetermining the carrier mobility in a-SiH.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IV
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(81116, 81117)
 The mobility profile obtained by cs-p<missing VAR>-CELIV correlateswell with the H content profile, measured independently, and is in excellentagreement with models suggesting a critical role of Si-H bonding in locallydetermining the carrier mobility in a-SiH.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(81128, 81128)
 The mobility profile obtained by cs-p<missing VAR>-CELIV correlateswell with the H content profile, measured independently, and is in excellentagreement with models suggesting a critical role of Si-H bonding in locallydetermining the carrier mobility in a-SiH.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(81165, 81165)
 The mobility profile obtained by cs-p<missing VAR>-CELIV correlateswell with the H content profile, measured independently, and is in excellentagreement with models suggesting a critical role of Si-H bonding in locallydetermining the carrier mobility in a-SiH.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(81167, 81167)
 The mobility profile obtained by cs-p<missing VAR>-CELIV correlateswell with the H content profile, measured independently, and is in excellentagreement with models suggesting a critical role of Si-H bonding in locallydetermining the carrier mobility in a-SiH.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiH
###Cross-sectional profile of photocarrier mobility in thin film solar cell via nongeminate recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)|Noah B. Stocek,Miguel J. Young,Reg Bauld,Tianhao Ouyang,Giovanni Fanchini###
(81188, 81189)
 The mobility profile obtained by cs-p<missing VAR>-CELIV correlateswell with the H content profile, measured independently, and is in excellentagreement with models suggesting a critical role of Si-H bonding in locallydetermining the carrier mobility in a-SiH.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Narrow-bandwidth solar upconversion: design principles, efficiency limits, and case studies|Justin A. Briggs,Ashwin C. Atre,Jennifer A. Dionne###
(81274, 81274)
 Asupconverter bandwidths are increased from 0 to 0.5 eV, maximum cellefficiencies increase from the Shockley-Queisser limit of 30.58% to over 43%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0, 'to', 0],[13.0, 0.5, 'eV', 0],[37.0, 30.58, '%', 0],[44.0, 43, '%', 0],[125.0, 1, '%', 2]

In
###Organic solar cell efficiencies under the aspect of reduced surface recombination velocities|A. Wagenpfahl,C. Deibel,V. Dyakonov###
(81717, 81717)
 In thismanuscript, using a macroscopic effective medium simulation, we consider how areduced bulk recombination process in combination with finite surfacerecombination velocities affect the power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(81910, 81910)
Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 21.74, '%', 4],[232.0, 12.6, '%', 4]

SSe
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(81913, 81914)
Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 21.74, '%', 4],[228.0, 12.6, '%', 4]

C
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(81964, 81964)
 A coupled optoelectronic model was implemented along with the differentialevolution algorithm to assess the efficacy of grading the bandgap of the CZTSSelayer for enhancing the power conversion efficiency of thin-film CZTSSe solarcells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 21.74, '%', 3],[178.0, 12.6, '%', 3]

SSe
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(81967, 81968)
 A coupled optoelectronic model was implemented along with the differentialevolution algorithm to assess the efficacy of grading the bandgap of the CZTSSelayer for enhancing the power conversion efficiency of thin-film CZTSSe solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 21.74, '%', 3],[174.0, 12.6, '%', 3]

C
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(81991, 81991)
 A coupled optoelectronic model was implemented along with the differentialevolution algorithm to assess the efficacy of grading the bandgap of the CZTSSelayer for enhancing the power conversion efficiency of thin-film CZTSSe solarcells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 21.74, '%', 3],[151.0, 12.6, '%', 3]

SSe
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(81994, 81995)
 A coupled optoelectronic model was implemented along with the differentialevolution algorithm to assess the efficacy of grading the bandgap of the CZTSSelayer for enhancing the power conversion efficiency of thin-film CZTSSe solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 21.74, '%', 3],[147.0, 12.6, '%', 3]

C
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(82127, 82127)
 An efficiency of 21.74% is predicted with sinusoidal grading of a870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achievedexperimentally with a 2200-nm-thick homogeneous CZTSSe layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 21.74, '%', 0],[15.0, 12.6, '%', 0]

SSe
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(82130, 82131)
 An efficiency of 21.74% is predicted with sinusoidal grading of a870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achievedexperimentally with a 2200-nm-thick homogeneous CZTSSe layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 21.74, '%', 0],[11.0, 12.6, '%', 0]

C
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(82164, 82164)
 An efficiency of 21.74% is predicted with sinusoidal grading of a870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achievedexperimentally with a 2200-nm-thick homogeneous CZTSSe layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 21.74, '%', 0],[22.0, 12.6, '%', 0]

SSe
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(82167, 82168)
 An efficiency of 21.74% is predicted with sinusoidal grading of a870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achievedexperimentally with a 2200-nm-thick homogeneous CZTSSe layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 21.74, '%', 0],[25.0, 12.6, '%', 0]

C
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(82238, 82238)
 Highelectron-hole-pair generation rates in the narrow-bandgap regions and a highopen-circuit voltage due to a wider bandgap close to the front and rear facesof the CZTSSe layer are responsible for the high enhancement of efficiency.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 21.74, '%', 1],[96.0, 12.6, '%', 1]

SSe
###Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer|Faiz Ahmad,Akhlesh Lakhtakia,Tom H. Anderson,Peter B. Monk###
(82241, 82242)
 Highelectron-hole-pair generation rates in the narrow-bandgap regions and a highopen-circuit voltage due to a wider bandgap close to the front and rear facesof the CZTSSe layer are responsible for the high enhancement of efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 21.74, '%', 1],[99.0, 12.6, '%', 1]

At
###Intense Internal and External Fluorescence as Solar Cells Approach the Shockley-Queisser Efficiency Limit|Owen D. Miller,Eli Yablonovitch,Sarah R. Kurtz###
(82423, 82423)
 At open-circuit,efficient external fluorescence is an indicator of low internal optical losses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 90, '%', 3]

(SCs)
###Modeling of high-efficiency silicon solar cells in realistic operating conditions|A. V. Sachenko,A. I. Shkrebtii,R. M. Korkishko,V. P. Kostylyov,N. R. Kulish,I. O. Sokolovskyi###
(82635, 82638)
 The selfconsistent model for the temperature dependence of photoconversionefficiency eta for highly efficient silicon solar cells (SCs) is developed.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Modeling of high-efficiency silicon solar cells in realistic operating conditions|A. V. Sachenko,A. I. Shkrebtii,R. M. Korkishko,V. P. Kostylyov,N. R. Kulish,I. O. Sokolovskyi###
(82683, 82684)
It is demonstrated that effect of the efficiency decrease due to increasingtemperature is less pronounced in the SCs with lower surface recombinationvelocity, thus offering a possibility to improve the cells performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Modeling of high-efficiency silicon solar cells in realistic operating conditions|A. V. Sachenko,A. I. Shkrebtii,R. M. Korkishko,V. P. Kostylyov,N. R. Kulish,I. O. Sokolovskyi###
(82758, 82759)
 The SC operating temperature isdetermined by self-consistently solving the photocurrent, photovoltage, andenergy balance equations, considering both radiative and convective coolingmechanisms.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Modeling of high-efficiency silicon solar cells in realistic operating conditions|A. V. Sachenko,A. I. Shkrebtii,R. M. Korkishko,V. P. Kostylyov,N. R. Kulish,I. O. Sokolovskyi###
(82814, 82815)
 The SC temperature is shown to be substantially higher than theambient temperature even at very high convection coefficients, such as, e.g.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Modeling of high-efficiency silicon solar cells in realistic operating conditions|A. V. Sachenko,A. I. Shkrebtii,R. M. Korkishko,V. P. Kostylyov,N. R. Kulish,I. O. Sokolovskyi###
(82867, 82867)
,300 W / (m<missing VAR>2 cdot K), used in our examples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Modeling of high-efficiency silicon solar cells in realistic operating conditions|A. V. Sachenko,A. I. Shkrebtii,R. M. Korkishko,V. P. Kostylyov,N. R. Kulish,I. O. Sokolovskyi###
(82877, 82877)
,300 W / (m<missing VAR>2 cdot K), used in our examples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Modeling of high-efficiency silicon solar cells in realistic operating conditions|A. V. Sachenko,A. I. Shkrebtii,R. M. Korkishko,V. P. Kostylyov,N. R. Kulish,I. O. Sokolovskyi###
(82919, 82920)
 The photoconversion efficiencyfor this case is substantially below the efficiency of thermally stabilized SC,for which the operating temperature is close to the external temperature.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Modeling of high-efficiency silicon solar cells in realistic operating conditions|A. V. Sachenko,A. I. Shkrebtii,R. M. Korkishko,V. P. Kostylyov,N. R. Kulish,I. O. Sokolovskyi###
(83000, 83001)
  The open-circuit voltage and photoconversion efficiency of the high-qualitysilicon solar cells under concentrated illumination are also investigatedincluding the tradeoff between SCs heating and cooling processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83034, 83036)
Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 33.1, '%', 3],[185.0, 27.4, '%', 3],[237.0, 34.5, '%', 4]

AlGaAs
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83059, 83061)
 An optoelectronic optimization was carried out for an AlGaAs solar cellcontaining (i) an n<missing VAR>-AlGaAs absorber layer with a graded bandgap and (ii) aperiodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Aubackcontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 33.1, '%', 2],[160.0, 27.4, '%', 2],[212.0, 34.5, '%', 3]

AlGaAs
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83078, 83080)
 An optoelectronic optimization was carried out for an AlGaAs solar cellcontaining (i) an n<missing VAR>-AlGaAs absorber layer with a graded bandgap and (ii) aperiodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Aubackcontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 33.1, '%', 2],[141.0, 27.4, '%', 2],[193.0, 34.5, '%', 3]

Ag
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83107, 83107)
 An optoelectronic optimization was carried out for an AlGaAs solar cellcontaining (i) an n<missing VAR>-AlGaAs absorber layer with a graded bandgap and (ii) aperiodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Aubackcontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 33.1, '%', 2],[114.0, 27.4, '%', 2],[166.0, 34.5, '%', 3]

Pd
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83119, 83119)
 An optoelectronic optimization was carried out for an AlGaAs solar cellcontaining (i) an n<missing VAR>-AlGaAs absorber layer with a graded bandgap and (ii) aperiodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Aubackcontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 33.1, '%', 2],[102.0, 27.4, '%', 2],[154.0, 34.5, '%', 3]

Ge
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83121, 83121)
 An optoelectronic optimization was carried out for an AlGaAs solar cellcontaining (i) an n<missing VAR>-AlGaAs absorber layer with a graded bandgap and (ii) aperiodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Aubackcontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 33.1, '%', 2],[100.0, 27.4, '%', 2],[152.0, 34.5, '%', 3]

Au
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83123, 83123)
 An optoelectronic optimization was carried out for an AlGaAs solar cellcontaining (i) an n<missing VAR>-AlGaAs absorber layer with a graded bandgap and (ii) aperiodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Aubackcontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 33.1, '%', 2],[98.0, 27.4, '%', 2],[150.0, 34.5, '%', 3]

AlGaAs
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83176, 83178)
 An efficiency of 33.1% with the 2000-nm-thick n<missing VAR>-AlGaAs absorberlayer is predicted with linearly graded bandgap along with silver backreflectorand localized ohmic backcontacts, in comparison to 27.4% efficiency obtainedwith homogeneous bandgap and a continuous ohmic backcontact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 33.1, '%', 0],[43.0, 27.4, '%', 0],[95.0, 34.5, '%', 1]

Ag
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83307, 83307)
 Thus,grading the bandgap of the absorber layer, along with a periodically corrugatedAg backreflector and localized ohmic Pd-Ge-Au backcontacts can help realizeultrathin and high-efficient AlGaAs solar cells for terrestrial applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 33.1, '%', 2],[86.0, 27.4, '%', 2],[34.0, 34.5, '%', 1]

Pd
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83317, 83317)
 Thus,grading the bandgap of the absorber layer, along with a periodically corrugatedAg backreflector and localized ohmic Pd-Ge-Au backcontacts can help realizeultrathin and high-efficient AlGaAs solar cells for terrestrial applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 33.1, '%', 2],[96.0, 27.4, '%', 2],[44.0, 34.5, '%', 1]

Ge
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83319, 83319)
 Thus,grading the bandgap of the absorber layer, along with a periodically corrugatedAg backreflector and localized ohmic Pd-Ge-Au backcontacts can help realizeultrathin and high-efficient AlGaAs solar cells for terrestrial applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 33.1, '%', 2],[98.0, 27.4, '%', 2],[46.0, 34.5, '%', 1]

Au
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83321, 83321)
 Thus,grading the bandgap of the absorber layer, along with a periodically corrugatedAg backreflector and localized ohmic Pd-Ge-Au backcontacts can help realizeultrathin and high-efficient AlGaAs solar cells for terrestrial applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 33.1, '%', 2],[100.0, 27.4, '%', 2],[48.0, 34.5, '%', 1]

AlGaAs
###Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells|Faiz Ahmad,Akhlesh Lakhtakia,Peter B. Monk###
(83340, 83342)
 Thus,grading the bandgap of the absorber layer, along with a periodically corrugatedAg backreflector and localized ohmic Pd-Ge-Au backcontacts can help realizeultrathin and high-efficient AlGaAs solar cells for terrestrial applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 33.1, '%', 2],[119.0, 27.4, '%', 2],[67.0, 34.5, '%', 1]

F
###Perovskite-perovskite tandem photovoltaics with optimized bandgaps|Giles E. Eperon,Tomas Leijtens,Kevin A. Bush,Rohit Prasanna,Thomas Green,Jacob Tse-Wei Wang,David P. McMeekin,George Volonakis,Rebecca L. Milot,Richard May,Axel Palmstrom,Daniel J. Slotcavage,Rebecca A. Belisle,Jay B. Patel,Elizabeth S. Parrott,Rebecca J. Sutton,Wen Ma,Farhad Moghadam,Bert Conings,Aslihan Babayigit,Hans-Gerd Boyen,Stacey Bent,Feliciano Giustino,Laura M. Herz,Michael B. Johnston,Michael D. McGehee,Henry J. Snaith###
(83427, 83427)
 We develop an infrared absorbing 1.2eV bandgapperovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, that can deliver 14.8 %efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1.2, 'eV', 0],[85.0, 1.65, 'volts', 1]

Cs0.25Sn0.5Pb0.5I3
###Perovskite-perovskite tandem photovoltaics with optimized bandgaps|Giles E. Eperon,Tomas Leijtens,Kevin A. Bush,Rohit Prasanna,Thomas Green,Jacob Tse-Wei Wang,David P. McMeekin,George Volonakis,Rebecca L. Milot,Richard May,Axel Palmstrom,Daniel J. Slotcavage,Rebecca A. Belisle,Jay B. Patel,Elizabeth S. Parrott,Rebecca J. Sutton,Wen Ma,Farhad Moghadam,Bert Conings,Aslihan Babayigit,Hans-Gerd Boyen,Stacey Bent,Feliciano Giustino,Laura M. Herz,Michael B. Johnston,Michael D. McGehee,Henry J. Snaith###
(83430, 83437)
 We develop an infrared absorbing 1.2eV bandgapperovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, that can deliver 14.8 %efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0.7058823529411765,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1.2, 'eV', 0],[75.0, 1.65, 'volts', 1]

F
###Perovskite-perovskite tandem photovoltaics with optimized bandgaps|Giles E. Eperon,Tomas Leijtens,Kevin A. Bush,Rohit Prasanna,Thomas Green,Jacob Tse-Wei Wang,David P. McMeekin,George Volonakis,Rebecca L. Milot,Richard May,Axel Palmstrom,Daniel J. Slotcavage,Rebecca A. Belisle,Jay B. Patel,Elizabeth S. Parrott,Rebecca J. Sutton,Wen Ma,Farhad Moghadam,Bert Conings,Aslihan Babayigit,Hans-Gerd Boyen,Stacey Bent,Feliciano Giustino,Laura M. Herz,Michael B. Johnston,Michael D. McGehee,Henry J. Snaith###
(83471, 83471)
 By combining this material with a wider bandgapFA0.83Cs0.17Pb(I0.5Br0.5)3 material, we reach monolithic twoterminal tandem efficiencies of 17.0 % with over 1.65 volts open-circuitvoltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1.2, 'eV', 1],[41.0, 1.65, 'volts', 0]

Cs0.17Pb(I0.5Br0.5)3
###Perovskite-perovskite tandem photovoltaics with optimized bandgaps|Giles E. Eperon,Tomas Leijtens,Kevin A. Bush,Rohit Prasanna,Thomas Green,Jacob Tse-Wei Wang,David P. McMeekin,George Volonakis,Rebecca L. Milot,Richard May,Axel Palmstrom,Daniel J. Slotcavage,Rebecca A. Belisle,Jay B. Patel,Elizabeth S. Parrott,Rebecca J. Sutton,Wen Ma,Farhad Moghadam,Bert Conings,Aslihan Babayigit,Hans-Gerd Boyen,Stacey Bent,Feliciano Giustino,Laura M. Herz,Michael B. Johnston,Michael D. McGehee,Henry J. Snaith###
(83474, 83483)
 By combining this material with a wider bandgapFA0.83Cs0.17Pb(I0.5Br0.5)3 material, we reach monolithic twoterminal tandem efficiencies of 17.0 % with over 1.65 volts open-circuitvoltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3597122302158273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3597122302158273,0,0.0407673860911271,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23980815347721823,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.2, 'eV', 1],[29.0, 1.65, 'volts', 0]

Sn
###Perovskite-perovskite tandem photovoltaics with optimized bandgaps|Giles E. Eperon,Tomas Leijtens,Kevin A. Bush,Rohit Prasanna,Thomas Green,Jacob Tse-Wei Wang,David P. McMeekin,George Volonakis,Rebecca L. Milot,Richard May,Axel Palmstrom,Daniel J. Slotcavage,Rebecca A. Belisle,Jay B. Patel,Elizabeth S. Parrott,Rebecca J. Sutton,Wen Ma,Farhad Moghadam,Bert Conings,Aslihan Babayigit,Hans-Gerd Boyen,Stacey Bent,Feliciano Giustino,Laura M. Herz,Michael B. Johnston,Michael D. McGehee,Henry J. Snaith###
(83590, 83590)
 Crucially, we find that our infrared absorbingperovskite cells exhibit excellent thermal and atmospheric stability,unprecedented for Sn based perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 1.2, 'eV', 3],[78.0, 1.65, 'volts', 2]

III
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83664, 83666)
Designing III-V Multijunction Solar Cells on Silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 32, '%', 7],[424.0, 36, '%', 7]

V
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83668, 83668)
Designing III-V Multijunction Solar Cells on Silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 32, '%', 7],[422.0, 36, '%', 7]

Si
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83685, 83685)
 Single junction Si solar cells dominate photovoltaics but are close to theirefficiency limits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 32, '%', 6],[405.0, 36, '%', 6]

Si
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83755, 83755)
 This paper presents ideal limiting efficiencies for tandemand triple junction multijunction solar cells subject only to the constraint ofthe Si bandgap and therefore recommending optimum cell structures departingfrom the single junction ideal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 32, '%', 5],[335.0, 36, '%', 5]

III
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83791, 83793)
 The use of III-V materials is considered, usinga novel growth method capable of yielding low defect density III-V layers onSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 32, '%', 4],[297.0, 36, '%', 4]

V
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83795, 83795)
 The use of III-V materials is considered, usinga novel growth method capable of yielding low defect density III-V layers onSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 32, '%', 4],[295.0, 36, '%', 4]

III
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83827, 83829)
 The use of III-V materials is considered, usinga novel growth method capable of yielding low defect density III-V layers onSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 32, '%', 4],[261.0, 36, '%', 4]

V
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83831, 83831)
 The use of III-V materials is considered, usinga novel growth method capable of yielding low defect density III-V layers onSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 32, '%', 4],[259.0, 36, '%', 4]

Si
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83838, 83838)
 The use of III-V materials is considered, usinga novel growth method capable of yielding low defect density III-V layers onSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 32, '%', 4],[252.0, 36, '%', 4]

In
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(83841, 83841)
 In order to evaluate the real potential of these proposed multijunctiondesigns, a quantitative model is presented, the strength of which is the jointmodelling of external quantum efficiency and current-voltage characteristicsusing the same parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 32, '%', 3],[249.0, 36, '%', 3]

III
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(84168, 84170)
 This demonstrates that efficiencieswithin a few percent of world records are realistically achievable without theuse of concentrating optics, with growth methods being developed formultijunction cells combining III-V and Si materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 32, '%', 1],[78.0, 36, '%', 1]

V
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(84172, 84172)
 This demonstrates that efficiencieswithin a few percent of world records are realistically achievable without theuse of concentrating optics, with growth methods being developed formultijunction cells combining III-V and Si materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 32, '%', 1],[82.0, 36, '%', 1]

Si
###Designing III-V Multijunction Solar Cells on Silicon|J. P. Connolly,D. Mencaraglia,C. Renard,D. Bouchier###
(84176, 84176)
 This demonstrates that efficiencieswithin a few percent of world records are realistically achievable without theuse of concentrating optics, with growth methods being developed formultijunction cells combining III-V and Si materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 32, '%', 1],[86.0, 36, '%', 1]

P
###On Quantum Coherence Effects in Photo and Solar Cells|Kimberly Chapin,Konstantin Dorfman,Anatoly Svidzinsky,Marlan Scully###
(84332, 84332)
P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 106, ',', 4]

InGaN/GaN
###Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications|Stylianos A. Kazazis,Elena Papadomanolaki,Eleftherios Iliopoulos###
(84370, 84375)
Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[152.0, 14, '%', 3]

InGaN
###Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications|Stylianos A. Kazazis,Elena Papadomanolaki,Eleftherios Iliopoulos###
(84400, 84402)
 The photovoltaic properties of (0001) n<missing VAR>-InGaN/p<missing VAR>-GaN single heterojunctionswere investigated numerically and compared with those of conventionalp<missing VAR>-GaN/i<missing VAR>-InGaN/n<missing VAR>-GaN structures, employing realistic material parameters.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 14, '%', 2]

GaN
###Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications|Stylianos A. Kazazis,Elena Papadomanolaki,Eleftherios Iliopoulos###
(84406, 84407)
 The photovoltaic properties of (0001) n<missing VAR>-InGaN/p<missing VAR>-GaN single heterojunctionswere investigated numerically and compared with those of conventionalp<missing VAR>-GaN/i<missing VAR>-InGaN/n<missing VAR>-GaN structures, employing realistic material parameters.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 14, '%', 2]

GaN
###Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications|Stylianos A. Kazazis,Elena Papadomanolaki,Eleftherios Iliopoulos###
(84435, 84436)
 The photovoltaic properties of (0001) n<missing VAR>-InGaN/p<missing VAR>-GaN single heterojunctionswere investigated numerically and compared with those of conventionalp<missing VAR>-GaN/i<missing VAR>-InGaN/n<missing VAR>-GaN structures, employing realistic material parameters.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 14, '%', 2]

InGaN
###Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications|Stylianos A. Kazazis,Elena Papadomanolaki,Eleftherios Iliopoulos###
(84440, 84442)
 The photovoltaic properties of (0001) n<missing VAR>-InGaN/p<missing VAR>-GaN single heterojunctionswere investigated numerically and compared with those of conventionalp<missing VAR>-GaN/i<missing VAR>-InGaN/n<missing VAR>-GaN structures, employing realistic material parameters.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 14, '%', 2]

GaN
###Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications|Stylianos A. Kazazis,Elena Papadomanolaki,Eleftherios Iliopoulos###
(84446, 84447)
 The photovoltaic properties of (0001) n<missing VAR>-InGaN/p<missing VAR>-GaN single heterojunctionswere investigated numerically and compared with those of conventionalp<missing VAR>-GaN/i<missing VAR>-InGaN/n<missing VAR>-GaN structures, employing realistic material parameters.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 14, '%', 2]

In
###Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications|Stylianos A. Kazazis,Elena Papadomanolaki,Eleftherios Iliopoulos###
(84496, 84496)
 Thisalternative device architecture exploits the large polarization fields, andhigh efficiency modules are achieved for In-rich, partially relaxed andcoherently strained InGaN films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 14, '%', 1]

InGaN
###Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications|Stylianos A. Kazazis,Elena Papadomanolaki,Eleftherios Iliopoulos###
(84512, 84514)
 Thisalternative device architecture exploits the large polarization fields, andhigh efficiency modules are achieved for In-rich, partially relaxed andcoherently strained InGaN films.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 14, '%', 1]

InGaN
###Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications|Stylianos A. Kazazis,Elena Papadomanolaki,Eleftherios Iliopoulos###
(84557, 84559)
 Conversion efficiencies up to 14% under AM1.5Gillumination can be reached, revealing the true potential of InGaN singlejunction solar cells with proper design.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 14, '%', 0]

In
###Microcavity effects on the generation, fluorescence, and diffusion of excitons in organic solar cells|G. Kozyreff,D. C. Urbanek,L. T. Vuong,O. Nieto-Silleras,J. Martorell###
(84967, 84967)
 In this way, the diffusion length can beincreased and the device performance significantly improved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IO
###Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)|Eran Edri,Saar Kirmayer,Alex Henning,Sabyasachi Mukhopadhyay,Konstantin Gartsman,Yossi Rosenwaks,Gary Hodes,David Cahen###
(85016, 85017)
Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)|Eran Edri,Saar Kirmayer,Alex Henning,Sabyasachi Mukhopadhyay,Konstantin Gartsman,Yossi Rosenwaks,Gary Hodes,David Cahen###
(85058, 85066)
 CH3NH3PbI3-based solar cells were characterized with electron beam-inducedcurrent (E<missing VAR>BIC), and compared to CH3NH3PbI3-xClx ones.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)|Eran Edri,Saar Kirmayer,Alex Henning,Sabyasachi Mukhopadhyay,Konstantin Gartsman,Yossi Rosenwaks,Gary Hodes,David Cahen###
(85093, 85093)
 CH3NH3PbI3-based solar cells were characterized with electron beam-inducedcurrent (E<missing VAR>BIC), and compared to CH3NH3PbI3-xClx ones.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3-x
###Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)|Eran Edri,Saar Kirmayer,Alex Henning,Sabyasachi Mukhopadhyay,Konstantin Gartsman,Yossi Rosenwaks,Gary Hodes,David Cahen###
(85103, 85113)
 CH3NH3PbI3-based solar cells were characterized with electron beam-inducedcurrent (E<missing VAR>BIC), and compared to CH3NH3PbI3-xClx ones.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

BIC
###Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)|Eran Edri,Saar Kirmayer,Alex Henning,Sabyasachi Mukhopadhyay,Konstantin Gartsman,Yossi Rosenwaks,Gary Hodes,David Cahen###
(85177, 85179)
 Effective diffusion lengths, LD, (from E<missing VAR>BIC profile) show thatholes are extracted significantly more efficiently than electrons inCH3NH3PbI3, explaining why CH3NH3PbI3-based cells require mesoporous electronconductors, while CH3NH3PbI3-xClx ones, where LD values are comparable for bothcharge types, do not.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)|Eran Edri,Saar Kirmayer,Alex Henning,Sabyasachi Mukhopadhyay,Konstantin Gartsman,Yossi Rosenwaks,Gary Hodes,David Cahen###
(85208, 85216)
 Effective diffusion lengths, LD, (from E<missing VAR>BIC profile) show thatholes are extracted significantly more efficiently than electrons inCH3NH3PbI3, explaining why CH3NH3PbI3-based cells require mesoporous electronconductors, while CH3NH3PbI3-xClx ones, where LD values are comparable for bothcharge types, do not.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)|Eran Edri,Saar Kirmayer,Alex Henning,Sabyasachi Mukhopadhyay,Konstantin Gartsman,Yossi Rosenwaks,Gary Hodes,David Cahen###
(85223, 85231)
 Effective diffusion lengths, LD, (from E<missing VAR>BIC profile) show thatholes are extracted significantly more efficiently than electrons inCH3NH3PbI3, explaining why CH3NH3PbI3-based cells require mesoporous electronconductors, while CH3NH3PbI3-xClx ones, where LD values are comparable for bothcharge types, do not.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3-x
###Why Lead Methylammonium tri-IODIDE perovskite-based solar cells requires a mesoporous electron transporting scaffold (but not necessarily a hole conductor)|Eran Edri,Saar Kirmayer,Alex Henning,Sabyasachi Mukhopadhyay,Konstantin Gartsman,Yossi Rosenwaks,Gary Hodes,David Cahen###
(85249, 85259)
 Effective diffusion lengths, LD, (from E<missing VAR>BIC profile) show thatholes are extracted significantly more efficiently than electrons inCH3NH3PbI3, explaining why CH3NH3PbI3-based cells require mesoporous electronconductors, while CH3NH3PbI3-xClx ones, where LD values are comparable for bothcharge types, do not.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

GeS0.25Se0.75
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85313, 85317)
Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS0.25Se0.75 (I2) Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(I2)
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85319, 85322)
Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS0.25Se0.75 (I2) Crystals.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85327, 85327)
 In the present investigation, the author has employed a Chemical VapourTransport (CVT) technique to grow the crystals of GeS0.25Se0.75 usingiodine as a transporting agent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CV
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85354, 85355)
 In the present investigation, the author has employed a Chemical VapourTransport (CVT) technique to grow the crystals of GeS0.25Se0.75 usingiodine as a transporting agent.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeS0.25Se0.75
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85371, 85375)
 In the present investigation, the author has employed a Chemical VapourTransport (CVT) technique to grow the crystals of GeS0.25Se0.75 usingiodine as a transporting agent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85410, 85410)
 The grown crystals were then characterized fora Photoelectrochemical(PE<missing VAR>C) study to find out solar parameters e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85412, 85412)
 The grown crystals were then characterized fora Photoelectrochemical(PE<missing VAR>C) study to find out solar parameters e.g.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FF)
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85437, 85440)
 Fill Factor(FF), Open Circuit Voltage (Voc), Short Circuit Current (Isc), and Efficiency(n).
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85511, 85511)
  Keywords Crystal growth, PE<missing VAR>C solar cell, fill factor, efficiency, SolarEnergy<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Growth and Photoelectrochemical Study of Germanium Sulphoselenide GeS$_{0.25}$Se$_{0.75}$ (I2) Crystals|Love Trivedi,Sandip Unadkat,Aastha Anish Patel###
(85513, 85513)
  Keywords Crystal growth, PE<missing VAR>C solar cell, fill factor, efficiency, SolarEnergy<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85564, 85565)
Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 12.4, '%', 0],[15.0, 0.3, 'V', 0],[78.0, 0.345, 'V', 1],[101.0, 12.6, '%', 1],[347.0, 8.84, '%', 5],[359.0, 0.391, 'V', 5],[456.0, 12.2, '%', 7],[575.0, 12.4, '%', 9],[585.0, 13.6, '%', 9],[599.0, 0.297, 'V', 9]

C
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85594, 85594)
 The limiting factor preventing kesterite (CZTSSe) thin film solar cellperformance further improvement is the large open-circuit voltage deficit(Voc,def) issue, which is 0.345V for the current world record device with anefficiency of 12.6%.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 12.4, '%', 1],[14.0, 0.3, 'V', 1],[49.0, 0.345, 'V', 0],[72.0, 12.6, '%', 0],[318.0, 8.84, '%', 4],[330.0, 0.391, 'V', 4],[427.0, 12.2, '%', 6],[546.0, 12.4, '%', 8],[556.0, 13.6, '%', 8],[570.0, 0.297, 'V', 8]

Se
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85598, 85598)
 The limiting factor preventing kesterite (CZTSSe) thin film solar cellperformance further improvement is the large open-circuit voltage deficit(Voc,def) issue, which is 0.345V for the current world record device with anefficiency of 12.6%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 12.4, '%', 1],[18.0, 0.3, 'V', 1],[45.0, 0.345, 'V', 0],[68.0, 12.6, '%', 0],[314.0, 8.84, '%', 4],[326.0, 0.391, 'V', 4],[423.0, 12.2, '%', 6],[542.0, 12.4, '%', 8],[552.0, 13.6, '%', 8],[566.0, 0.297, 'V', 8]

In
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85670, 85670)
 In this work, SnCl4 and SnCl22H2O are respectively usedas tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO)solution processed CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 12.4, '%', 2],[90.0, 0.3, 'V', 2],[27.0, 0.345, 'V', 1],[4.0, 12.6, '%', 1],[242.0, 8.84, '%', 3],[254.0, 0.391, 'V', 3],[351.0, 12.2, '%', 5],[470.0, 12.4, '%', 7],[480.0, 13.6, '%', 7],[494.0, 0.297, 'V', 7]

SnCl4
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85677, 85679)
 In this work, SnCl4 and SnCl22H2O are respectively usedas tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO)solution processed CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 12.4, '%', 2],[97.0, 0.3, 'V', 2],[34.0, 0.345, 'V', 1],[11.0, 12.6, '%', 1],[233.0, 8.84, '%', 3],[245.0, 0.391, 'V', 3],[342.0, 12.2, '%', 5],[461.0, 12.4, '%', 7],[471.0, 13.6, '%', 7],[485.0, 0.297, 'V', 7]

SnCl22H2O
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85683, 85689)
 In this work, SnCl4 and SnCl22H2O are respectively usedas tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO)solution processed CZTSSe solar cells.
Featurization terminated normally.
0.07692307692307693,0,0,0,0,0,0,0.038461538461538464,0,0,0,0,0,0,0,0,0.8461538461538461,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.038461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 12.4, '%', 2],[103.0, 0.3, 'V', 2],[40.0, 0.345, 'V', 1],[17.0, 12.6, '%', 1],[223.0, 8.84, '%', 3],[235.0, 0.391, 'V', 3],[332.0, 12.2, '%', 5],[451.0, 12.4, '%', 7],[461.0, 13.6, '%', 7],[475.0, 0.297, 'V', 7]

O
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85726, 85726)
 In this work, SnCl4 and SnCl22H2O are respectively usedas tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO)solution processed CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 12.4, '%', 2],[146.0, 0.3, 'V', 2],[83.0, 0.345, 'V', 1],[60.0, 12.6, '%', 1],[186.0, 8.84, '%', 3],[198.0, 0.391, 'V', 3],[295.0, 12.2, '%', 5],[414.0, 12.4, '%', 7],[424.0, 13.6, '%', 7],[438.0, 0.297, 'V', 7]

C
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85734, 85734)
 In this work, SnCl4 and SnCl22H2O are respectively usedas tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO)solution processed CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 12.4, '%', 2],[154.0, 0.3, 'V', 2],[91.0, 0.345, 'V', 1],[68.0, 12.6, '%', 1],[178.0, 8.84, '%', 3],[190.0, 0.391, 'V', 3],[287.0, 12.2, '%', 5],[406.0, 12.4, '%', 7],[416.0, 13.6, '%', 7],[430.0, 0.297, 'V', 7]

SSe
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85737, 85738)
 In this work, SnCl4 and SnCl22H2O are respectively usedas tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO)solution processed CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 12.4, '%', 2],[157.0, 0.3, 'V', 2],[94.0, 0.345, 'V', 1],[71.0, 12.6, '%', 1],[174.0, 8.84, '%', 3],[186.0, 0.391, 'V', 3],[283.0, 12.2, '%', 5],[402.0, 12.4, '%', 7],[412.0, 13.6, '%', 7],[426.0, 0.297, 'V', 7]

SO
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85764, 85765)
 Different complexations of tin compoundswith thiourea and DMSO lead to different reaction pathways from solution toabsorber material and thus dramatic difference in photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 12.4, '%', 3],[184.0, 0.3, 'V', 3],[121.0, 0.345, 'V', 2],[98.0, 12.6, '%', 2],[147.0, 8.84, '%', 2],[159.0, 0.391, 'V', 2],[256.0, 12.2, '%', 4],[375.0, 12.4, '%', 6],[385.0, 13.6, '%', 6],[399.0, 0.297, 'V', 6]

SnS
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85828, 85829)
 Thecoordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S inthe precursor film, which converted to selenides first and then fused toCZTSSe, resulting in poor film quality and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 12.4, '%', 4],[248.0, 0.3, 'V', 4],[185.0, 0.345, 'V', 3],[162.0, 12.6, '%', 3],[83.0, 8.84, '%', 1],[95.0, 0.391, 'V', 1],[192.0, 12.2, '%', 3],[311.0, 12.4, '%', 5],[321.0, 13.6, '%', 5],[335.0, 0.297, 'V', 5]

ZnS
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85833, 85834)
 Thecoordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S inthe precursor film, which converted to selenides first and then fused toCZTSSe, resulting in poor film quality and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 12.4, '%', 4],[253.0, 0.3, 'V', 4],[190.0, 0.345, 'V', 3],[167.0, 12.6, '%', 3],[78.0, 8.84, '%', 1],[90.0, 0.391, 'V', 1],[187.0, 12.2, '%', 3],[306.0, 12.4, '%', 5],[316.0, 13.6, '%', 5],[330.0, 0.297, 'V', 5]

Cu2S
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85838, 85840)
 Thecoordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S inthe precursor film, which converted to selenides first and then fused toCZTSSe, resulting in poor film quality and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 12.4, '%', 4],[258.0, 0.3, 'V', 4],[195.0, 0.345, 'V', 3],[172.0, 12.6, '%', 3],[72.0, 8.84, '%', 1],[84.0, 0.391, 'V', 1],[181.0, 12.2, '%', 3],[300.0, 12.4, '%', 5],[310.0, 13.6, '%', 5],[324.0, 0.297, 'V', 5]

C
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85871, 85871)
 Thecoordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S inthe precursor film, which converted to selenides first and then fused toCZTSSe, resulting in poor film quality and device performance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 12.4, '%', 4],[291.0, 0.3, 'V', 4],[228.0, 0.345, 'V', 3],[205.0, 12.6, '%', 3],[41.0, 8.84, '%', 1],[53.0, 0.391, 'V', 1],[150.0, 12.2, '%', 3],[269.0, 12.4, '%', 5],[279.0, 13.6, '%', 5],[293.0, 0.297, 'V', 5]

SSe
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85874, 85875)
 Thecoordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S inthe precursor film, which converted to selenides first and then fused toCZTSSe, resulting in poor film quality and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 12.4, '%', 4],[294.0, 0.3, 'V', 4],[231.0, 0.345, 'V', 3],[208.0, 12.6, '%', 3],[37.0, 8.84, '%', 1],[49.0, 0.391, 'V', 1],[146.0, 12.2, '%', 3],[265.0, 12.4, '%', 5],[275.0, 13.6, '%', 5],[289.0, 0.297, 'V', 5]

SO
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85942, 85943)
 Thecoordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTSphase in the precursor film which directed converted to CZTSSe duringselenization, resulting in compositional uniform absorber and high deviceperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 12.4, '%', 6],[362.0, 0.3, 'V', 6],[299.0, 0.345, 'V', 5],[276.0, 12.6, '%', 5],[30.0, 8.84, '%', 1],[18.0, 0.391, 'V', 1],[78.0, 12.2, '%', 1],[197.0, 12.4, '%', 3],[207.0, 13.6, '%', 3],[221.0, 0.297, 'V', 3]

C
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85953, 85953)
 Thecoordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTSphase in the precursor film which directed converted to CZTSSe duringselenization, resulting in compositional uniform absorber and high deviceperformance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 12.4, '%', 6],[373.0, 0.3, 'V', 6],[310.0, 0.345, 'V', 5],[287.0, 12.6, '%', 5],[41.0, 8.84, '%', 1],[29.0, 0.391, 'V', 1],[68.0, 12.2, '%', 1],[187.0, 12.4, '%', 3],[197.0, 13.6, '%', 3],[211.0, 0.297, 'V', 3]

S
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85956, 85956)
 Thecoordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTSphase in the precursor film which directed converted to CZTSSe duringselenization, resulting in compositional uniform absorber and high deviceperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[407.0, 12.4, '%', 6],[376.0, 0.3, 'V', 6],[313.0, 0.345, 'V', 5],[290.0, 12.6, '%', 5],[44.0, 8.84, '%', 1],[32.0, 0.391, 'V', 1],[65.0, 12.2, '%', 1],[184.0, 12.4, '%', 3],[194.0, 13.6, '%', 3],[208.0, 0.297, 'V', 3]

C
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85977, 85977)
 Thecoordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTSphase in the precursor film which directed converted to CZTSSe duringselenization, resulting in compositional uniform absorber and high deviceperformance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 12.4, '%', 6],[397.0, 0.3, 'V', 6],[334.0, 0.345, 'V', 5],[311.0, 12.6, '%', 5],[65.0, 8.84, '%', 1],[53.0, 0.391, 'V', 1],[44.0, 12.2, '%', 1],[163.0, 12.4, '%', 3],[173.0, 13.6, '%', 3],[187.0, 0.297, 'V', 3]

SSe
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(85980, 85981)
 Thecoordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTSphase in the precursor film which directed converted to CZTSSe duringselenization, resulting in compositional uniform absorber and high deviceperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 12.4, '%', 6],[400.0, 0.3, 'V', 6],[337.0, 0.345, 'V', 5],[314.0, 12.6, '%', 5],[68.0, 8.84, '%', 1],[56.0, 0.391, 'V', 1],[40.0, 12.2, '%', 1],[159.0, 12.4, '%', 3],[169.0, 13.6, '%', 3],[183.0, 0.297, 'V', 3]

V
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(86037, 86037)
 A device with active area efficiency 12.2% and a Voc,def of 0.344V was achieved from Sn4+ solution processed absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[488.0, 12.4, '%', 7],[457.0, 0.3, 'V', 7],[394.0, 0.345, 'V', 6],[371.0, 12.6, '%', 6],[125.0, 8.84, '%', 2],[113.0, 0.391, 'V', 2],[16.0, 12.2, '%', 0],[103.0, 12.4, '%', 2],[113.0, 13.6, '%', 2],[127.0, 0.297, 'V', 2]

C
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(86059, 86059)
 Furthermore, CZTSSe/CdSheterojunction heat treatment (JHT) significantly improved Sn4+ deviceperformance but had slightly negative effect on Sn2+ device.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[510.0, 12.4, '%', 8],[479.0, 0.3, 'V', 8],[416.0, 0.345, 'V', 7],[393.0, 12.6, '%', 7],[147.0, 8.84, '%', 3],[135.0, 0.391, 'V', 3],[38.0, 12.2, '%', 1],[81.0, 12.4, '%', 1],[91.0, 13.6, '%', 1],[105.0, 0.297, 'V', 1]

SSe/CdS
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(86062, 86066)
 Furthermore, CZTSSe/CdSheterojunction heat treatment (JHT) significantly improved Sn4+ deviceperformance but had slightly negative effect on Sn2+ device.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[513.0, 12.4, '%', 8],[482.0, 0.3, 'V', 8],[419.0, 0.345, 'V', 7],[396.0, 12.6, '%', 7],[150.0, 8.84, '%', 3],[138.0, 0.391, 'V', 3],[41.0, 12.2, '%', 1],[74.0, 12.4, '%', 1],[84.0, 13.6, '%', 1],[98.0, 0.297, 'V', 1]

C
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(86117, 86117)
 A champion CZTSSesolar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)and low Voc,def of 0.297 V was achieved from Sn4+ solution.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[568.0, 12.4, '%', 9],[537.0, 0.3, 'V', 9],[474.0, 0.345, 'V', 8],[451.0, 12.6, '%', 8],[205.0, 8.84, '%', 4],[193.0, 0.391, 'V', 4],[96.0, 12.2, '%', 2],[23.0, 12.4, '%', 0],[33.0, 13.6, '%', 0],[47.0, 0.297, 'V', 0]

SSe
###Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V|Yuancai Gong,Yifan Zhang,Erin Jedlicka,Rajiv Giridharagopal,James A. Clark,Weibo Yan,Chuanyou Niu,Ruichan Qiu,Jingjing Jiang,Shaotang Yu,Sanping Wu,Hugh W. Hillhouse,David S. Ginger,Wei Huang,Hao Xin###
(86120, 86121)
 A champion CZTSSesolar cell with a total area efficiency of 12.4% (active are efficiency 13.6%)and low Voc,def of 0.297 V was achieved from Sn4+ solution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[571.0, 12.4, '%', 9],[540.0, 0.3, 'V', 9],[477.0, 0.345, 'V', 8],[454.0, 12.6, '%', 8],[208.0, 8.84, '%', 4],[196.0, 0.391, 'V', 4],[99.0, 12.2, '%', 2],[19.0, 12.4, '%', 0],[29.0, 13.6, '%', 0],[43.0, 0.297, 'V', 0]

BPV
###On the energy conversion efficiency of the bulk photovoltaic effect|Andreas Pusch,Udo Römer,Dimitrie Culcer,Nicholas J. Ekins-Daukes###
(86307, 86309)
 The bulk photovoltaic effect (BPVE) leads to directed photo-currents andphoto-voltages in bulk materials.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[580.0, 2, 'D', 10],[642.0, 3, 'D', 10]

BPV
###On the energy conversion efficiency of the bulk photovoltaic effect|Andreas Pusch,Udo Römer,Dimitrie Culcer,Nicholas J. Ekins-Daukes###
(86392, 86394)
 Unlike photo-voltages in p-n junction solarcells that are limited by carrier recombination to values below the bandgapenergy of the absorbing material, the BPVE<missing VAR> photo-voltages have been shown togreatly exceed the bandgap energy.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[495.0, 2, 'D', 9],[557.0, 3, 'D', 9]

BPV
###On the energy conversion efficiency of the bulk photovoltaic effect|Andreas Pusch,Udo Römer,Dimitrie Culcer,Nicholas J. Ekins-Daukes###
(86425, 86427)
 Therefore the BPVE<missing VAR> is not subject to theShockley-Queisser limit for sunlight to electricity conversion in singlejunction solar cells and experimental claims of efficiencies beyond this limithave been made.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[462.0, 2, 'D', 8],[524.0, 3, 'D', 8]

BPV
###On the energy conversion efficiency of the bulk photovoltaic effect|Andreas Pusch,Udo Römer,Dimitrie Culcer,Nicholas J. Ekins-Daukes###
(86501, 86503)
 Here, we show that BPVE<missing VAR> energy conversion efficiencies are, inpractice, orders of magnitude below the Shockley-Queisser limit of singlejunction solar cells and are subject to different, more stringent limits.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 2, 'D', 7],[448.0, 3, 'D', 7]

BPV
###On the energy conversion efficiency of the bulk photovoltaic effect|Andreas Pusch,Udo Römer,Dimitrie Culcer,Nicholas J. Ekins-Daukes###
(86571, 86573)
 Thename BPVE<missing VAR> stands for two different fundamental effects, the shift current andthe injection current.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 2, 'D', 6],[378.0, 3, 'D', 6]

In
###On the energy conversion efficiency of the bulk photovoltaic effect|Andreas Pusch,Udo Römer,Dimitrie Culcer,Nicholas J. Ekins-Daukes###
(86605, 86605)
 In both of these, the voltage bias necessary to produceelectrical energy, accelerates both, intrinsic and photo-generated, carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 2, 'D', 5],[346.0, 3, 'D', 5]

BPV
###On the energy conversion efficiency of the bulk photovoltaic effect|Andreas Pusch,Udo Römer,Dimitrie Culcer,Nicholas J. Ekins-Daukes###
(86668, 86670)
We discuss how energy conservation alone fundamentally limits the BPVE<missing VAR> to abandgap-dependent value that exceeds the Shockley Queisser limit only for verysmall bandgaps.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 2, 'D', 4],[281.0, 3, 'D', 4]

BPV
###On the energy conversion efficiency of the bulk photovoltaic effect|Andreas Pusch,Udo Römer,Dimitrie Culcer,Nicholas J. Ekins-Daukes###
(86914, 86916)
 Finally, we calculate theenergy conversion efficiency for an example 2D material that has been suggestedas candidate material for high efficiency BPVE<missing VAR> based solar cells and show thatthe efficiency is very similar to the efficiency of known 3D materials.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, 'D', 0],[35.0, 3, 'D', 0]

In
###Device Engineering of Perovskite Solar Cells to Achieve Near Ideal Efficiency|Sumanshu Agarwal,Pradeep R. Nair###
(87049, 87049)
 In this manuscript, we address theseaspects through theoretical calculations and detailed numerical simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 25, '%', 4],[239.0, 85, '%', 4]

I
###Semi-Transparent Solar Cell enabled by Frequency Selective Light Trapping|Duncan C. Wheeler,Yichen Shen,Yi Yang,Svetlana V. Boriskina,Yi Huang,Ognjen Ilic,Gang Chen,Marin Soljacic###
(87443, 87443)
 A nanoparticle scattering layer and photonic stackback reflector create a selective trapping effect by total internal reflectionwithin a medium, increasing absorption of IR<missing VAR> light.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 255, 'nm', 1],[49.0, 1.1, '%', 1],[129.0, 12.0, '%', 2],[132.0, 0.4, '%', 2],[146.0, 60.2, '%', 2],[149.0, 1.3, '%', 2],[153.0, 13.3, '%', 2]

TiO2
###Semi-Transparent Solar Cell enabled by Frequency Selective Light Trapping|Duncan C. Wheeler,Yichen Shen,Yi Yang,Svetlana V. Boriskina,Yi Huang,Ognjen Ilic,Gang Chen,Marin Soljacic###
(87470, 87472)
 We propose a strongfrequency selective scattering layer using spherical TiO2 nanoparticles withradius of 255 nm and area density of 1.1% in a medium with index of refractionof 1.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 255, 'nm', 0],[20.0, 1.1, '%', 0],[100.0, 12.0, '%', 1],[103.0, 0.4, '%', 1],[117.0, 60.2, '%', 1],[120.0, 1.3, '%', 1],[124.0, 13.3, '%', 1]

(PSC)
###Dipole-field-assisted charge extraction in metal-perovskite-metal back-contact solar cells|Xiongfeng Lin,Askhat N. Jumabekov,Niraj N. Lal,Alexander R. Pascoe,Daniel E. Gomez,Noel W. Duffy,Anthony S. R. Chesman,Kallista Sears,Maxime Fournier,Yupeng Zhang,Qiaoliang Bao,Yibing Cheng,Leone Spiccia,Udo Bach###
(88131, 88135)
 Herein wepresent a simple charge transport layer-free perovskite solar cell (PSC),comprising only a perovskite layer with two interdigitated gold back-contacts.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 600, 'mV', 2],[140.0, 12.1, 'mA', 3]

S
###Dipole-field-assisted charge extraction in metal-perovskite-metal back-contact solar cells|Xiongfeng Lin,Askhat N. Jumabekov,Niraj N. Lal,Alexander R. Pascoe,Daniel E. Gomez,Noel W. Duffy,Anthony S. R. Chesman,Kallista Sears,Maxime Fournier,Yupeng Zhang,Qiaoliang Bao,Yibing Cheng,Leone Spiccia,Udo Bach###
(88182, 88182)
Charge extraction is achieved via self-assembled molecular monolayers (SAMs)and their associated dipole fields at the metal/perovskite interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 600, 'mV', 1],[93.0, 12.1, 'mA', 2]

S
###Dipole-field-assisted charge extraction in metal-perovskite-metal back-contact solar cells|Xiongfeng Lin,Askhat N. Jumabekov,Niraj N. Lal,Alexander R. Pascoe,Daniel E. Gomez,Noel W. Duffy,Anthony S. R. Chesman,Kallista Sears,Maxime Fournier,Yupeng Zhang,Qiaoliang Bao,Yibing Cheng,Leone Spiccia,Udo Bach###
(88221, 88221)
Photovoltages of approximately 600 mV generated by SAM<missing VAR>-modified PSCs areequivalent to the built-in potential generated by individual dipole layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 600, 'mV', 0],[54.0, 12.1, 'mA', 1]

PSCs
###Dipole-field-assisted charge extraction in metal-perovskite-metal back-contact solar cells|Xiongfeng Lin,Askhat N. Jumabekov,Niraj N. Lal,Alexander R. Pascoe,Daniel E. Gomez,Noel W. Duffy,Anthony S. R. Chesman,Kallista Sears,Maxime Fournier,Yupeng Zhang,Qiaoliang Bao,Yibing Cheng,Leone Spiccia,Udo Bach###
(88227, 88229)
Photovoltages of approximately 600 mV generated by SAM<missing VAR>-modified PSCs areequivalent to the built-in potential generated by individual dipole layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 600, 'mV', 0],[46.0, 12.1, 'mA', 1]

S
###Upper limit to the photovoltaic efficiency of imperfect crystals|Sunghyun Kim,José A. Márquez,Thomas Unold,Aron Walsh###
(88333, 88333)
 The Shockley-Queisser (SQ) limit provides a convenient metric for predictinglight-to-electricity conversion efficiency of a solar cell based on the bandgap of the light-absorbing layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 20, '%', 4],[217.0, 32, '%', 4],[258.0, 31, '%', 5]

In
###Upper limit to the photovoltaic efficiency of imperfect crystals|Sunghyun Kim,José A. Márquez,Thomas Unold,Aron Walsh###
(88392, 88392)
 In reality, few materials approach thisradiative limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 20, '%', 3],[158.0, 32, '%', 3],[199.0, 31, '%', 4]

Cu2ZnSnSe4
###Upper limit to the photovoltaic efficiency of imperfect crystals|Sunghyun Kim,José A. Márquez,Thomas Unold,Aron Walsh###
(88525, 88530)
When applied to kesterite solar cells, we reveal an intrinsic limit of 20% formathrmCu2ZnSnSe4, which falls far below the SQ<missing VAR> limit of 32%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 20, '%', 0],[20.0, 32, '%', 0],[61.0, 31, '%', 1]

S
###Upper limit to the photovoltaic efficiency of imperfect crystals|Sunghyun Kim,José A. Márquez,Thomas Unold,Aron Walsh###
(88543, 88543)
When applied to kesterite solar cells, we reveal an intrinsic limit of 20% formathrmCu2ZnSnSe4, which falls far below the SQ<missing VAR> limit of 32%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 20, '%', 0],[7.0, 32, '%', 0],[48.0, 31, '%', 1]

N
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(88954, 88954)
Detailed study of N,N-(diisopropylphenyl)- terrylene-3,411,12-bis(dicarboximide) as electron acceptor for solar cells application.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, -3, ',', 0],[14.0, 11, ',', 0],[45.0, -3, ',', 1],[49.0, 11, ',', 1]

N
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(88956, 88956)
Detailed study of N,N-(diisopropylphenyl)- terrylene-3,411,12-bis(dicarboximide) as electron acceptor for solar cells application.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, -3, ',', 0],[12.0, 11, ',', 0],[43.0, -3, ',', 1],[47.0, 11, ',', 1]

I
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(89015, 89015)
 We report on terrylene-3,411,12-bis(dicarboximide) (TDI) as electronacceptor for bulk-heterojunction solar cells using poly(3-hexyl thiophene)(P3HT) as complementary donor component.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, -3, ',', 1],[47.0, 11, ',', 1],[16.0, -3, ',', 0],[12.0, 11, ',', 0]

P3H
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(89048, 89050)
 We report on terrylene-3,411,12-bis(dicarboximide) (TDI) as electronacceptor for bulk-heterojunction solar cells using poly(3-hexyl thiophene)(P3HT) as complementary donor component.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, -3, ',', 1],[80.0, 11, ',', 1],[49.0, -3, ',', 0],[45.0, 11, ',', 0]

P3H
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(89084, 89086)
 Enhanced absorption was observed inthe blend compared to pure P3HT<missing VAR>.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, -3, ',', 2],[116.0, 11, ',', 2],[85.0, -3, ',', 1],[81.0, 11, ',', 1]

As
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(89090, 89090)
 As shown by the very efficientphotoluminescence (PL) quenching, the generated excitons are collected at theinterface between the donor and acceptor, where they separate into chargeswhich we detect by photoinduced absorption and electron-spin resonance (ESR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, -3, ',', 3],[122.0, 11, ',', 3],[91.0, -3, ',', 2],[87.0, 11, ',', 2]

P
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(89106, 89106)
 As shown by the very efficientphotoluminescence (PL) quenching, the generated excitons are collected at theinterface between the donor and acceptor, where they separate into chargeswhich we detect by photoinduced absorption and electron-spin resonance (ESR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, -3, ',', 3],[138.0, 11, ',', 3],[107.0, -3, ',', 2],[103.0, 11, ',', 2]

F
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(89189, 89189)
Time-of-flight (T<missing VAR>OF) photoconductivity measurements reveal a good electronmobility of 10-3 cm2 V-1 s<missing VAR>-1 in the blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, -3, ',', 4],[221.0, 11, ',', 4],[190.0, -3, ',', 3],[186.0, 11, ',', 3]

V
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(89216, 89216)
Time-of-flight (T<missing VAR>OF) photoconductivity measurements reveal a good electronmobility of 10-3 cm2 V-1 s<missing VAR>-1 in the blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, -3, ',', 4],[248.0, 11, ',', 4],[217.0, -3, ',', 3],[213.0, 11, ',', 3]

I
###Detailed study of N,N'-(diisopropylphenyl)- terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application|Julien Gorenflot,Andreas Sperlich,Andreas Baumann,Daniel Rauh,Aleksey Vasilev,Chen Li,Martin Baumgarten,Carsten Deibel,Vladimir Dyakonov###
(89332, 89332)
 Supported by the external quantumefficiency (EQE) spectrum as well as morphological studies by way of X<missing VAR>-raydiffraction and atomic force microscopy, we explain our observation by theformation of a TDI hole blocking layer at the anode interface which preventsthe efficiently generated charges to be extracted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, -3, ',', 6],[364.0, 11, ',', 6],[333.0, -3, ',', 5],[329.0, 11, ',', 5]

(PCEs)
###A General Approach to High Efficiency Perovskite Solar Cells by Any Antisolvent|Alexander D. Taylor,Qing Sun,Katelyn P. Goetz,Qingzhi An,Tim Schramm,Yvonne Hofstetter,Maximillian Litterst,Fabian Paulus,Yana Vaynzof###
(89658, 89662)
 Depending on these two factors, each antisolvent can beutilized to produce high performance devices reaching power conversionefficiencies (PCEs) that exceed 21%.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[6.0, 21, '%', 0]

Cu2ZnSnS4
###Ab initio calculation of the detailed balance limit to the photovoltaic efficiency of single p-n junction kesterite solar cells|Sunghyun Kim,Aron Walsh###
(89997, 90002)
 Forkesterite-structured Cu2ZnSnS4, the radiative limit is reached for a filmthickness of around 2.6 micrometer, where the efficiency gain due to lightabsorption is counterbalanced by losses due to the increase in recombinationcurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2.6, 'micrometer', 0]

InGaN
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90091, 90093)
Study of simulations of double graded InGaN solar cell structures.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 60, '%', 7]

InGaN
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90114, 90116)
 The performances of various configurations of InGaN solar cells are comparedusing nextnano software.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 60, '%', 6]

GaN/InGaN
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90150, 90155)
 Here we compare a flat base graded wall GaN/InGaNstructure, with an InxGa1-xN well with sharp GaN contact layers, and anInxGa1-xN structure with InxGa1-xN contact layers, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[308.0, 60, '%', 5]

Ga1-xN
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90166, 90170)
 Here we compare a flat base graded wall GaN/InGaNstructure, with an InxGa1-xN well with sharp GaN contact layers, and anInxGa1-xN structure with InxGa1-xN contact layers, i.e.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[293.0, 60, '%', 5]

GaN
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90178, 90179)
 Here we compare a flat base graded wall GaN/InGaNstructure, with an InxGa1-xN well with sharp GaN contact layers, and anInxGa1-xN structure with InxGa1-xN contact layers, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 60, '%', 5]

Ga1-xN
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90192, 90196)
 Here we compare a flat base graded wall GaN/InGaNstructure, with an InxGa1-xN well with sharp GaN contact layers, and anInxGa1-xN structure with InxGa1-xN contact layers, i.e.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[267.0, 60, '%', 5]

Ga1-xN
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90203, 90207)
 Here we compare a flat base graded wall GaN/InGaNstructure, with an InxGa1-xN well with sharp GaN contact layers, and anInxGa1-xN structure with InxGa1-xN contact layers, i.e.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[256.0, 60, '%', 5]

V
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90354, 90354)
 The solar cells arecharacterized by their open-circuit voltage, Voc, short circuit current, Isc,solar efficiency, and energy band diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 60, '%', 2]

I
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90365, 90365)
 The solar cells arecharacterized by their open-circuit voltage, Voc, short circuit current, Isc,solar efficiency, and energy band diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 60, '%', 2]

I
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90399, 90399)
 The results indicate that anincrease in Isc and efficiency results from increasing both the fixed and themaximum indium compositions, while the Voc decreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 60, '%', 1]

V
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90434, 90434)
 The results indicate that anincrease in Isc and efficiency results from increasing both the fixed and themaximum indium compositions, while the Voc decreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 60, '%', 1]

InGaN
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90455, 90457)
 The maximum efficiencyis obtained for the InGaN well with 60% In.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 60, '%', 0]

In
###Study of simulations of double graded InGaN solar cell structures|Mirsaeid Sarollahi,Manal A. Aldawsari,Rohith Allaparthi,Malak A. Refaei,Reem Alhelais,Md Helal Uddin Maruf,Yuriy Mazur,Morgan E. Ware###
(90466, 90466)
 The maximum efficiencyis obtained for the InGaN well with 60% In.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 60, '%', 0]

CI
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(90839, 90840)
Efficiency enhancement of ultrathin CIG<missing VAR>S solar cells by optimal bandgap grading.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 27.7, '%', 4],[259.0, 22, '%', 4],[300.0, 22.89, '%', 5]

S
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(90842, 90842)
Efficiency enhancement of ultrathin CIG<missing VAR>S solar cells by optimal bandgap grading.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 27.7, '%', 4],[257.0, 22, '%', 4],[298.0, 22.89, '%', 5]

CI
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(90871, 90872)
 The power conversion efficiency of an ultrathin CIG<missing VAR>S solar cell was maximizedusing a coupled optoelectronic model to determine the optimal bandgap gradingof the nonhomogeneous CIG<missing VAR>S layer in the thickness direction.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 27.7, '%', 3],[227.0, 22, '%', 3],[268.0, 22.89, '%', 4]

S
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(90874, 90874)
 The power conversion efficiency of an ultrathin CIG<missing VAR>S solar cell was maximizedusing a coupled optoelectronic model to determine the optimal bandgap gradingof the nonhomogeneous CIG<missing VAR>S layer in the thickness direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 27.7, '%', 3],[225.0, 22, '%', 3],[266.0, 22.89, '%', 4]

CI
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(90914, 90915)
 The power conversion efficiency of an ultrathin CIG<missing VAR>S solar cell was maximizedusing a coupled optoelectronic model to determine the optimal bandgap gradingof the nonhomogeneous CIG<missing VAR>S layer in the thickness direction.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 27.7, '%', 3],[184.0, 22, '%', 3],[225.0, 22.89, '%', 4]

S
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(90917, 90917)
 The power conversion efficiency of an ultrathin CIG<missing VAR>S solar cell was maximizedusing a coupled optoelectronic model to determine the optimal bandgap gradingof the nonhomogeneous CIG<missing VAR>S layer in the thickness direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 27.7, '%', 3],[182.0, 22, '%', 3],[223.0, 22.89, '%', 4]

CI
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(90939, 90940)
 The bandgap of theCIG<missing VAR>S layer was either sinusoidally or linearly graded, and the solar cell wasmodeled to have a metallic backreflector corrugated periodically along a fixeddirection in the plane.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 27.7, '%', 2],[159.0, 22, '%', 2],[200.0, 22.89, '%', 3]

S
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(90942, 90942)
 The bandgap of theCIG<missing VAR>S layer was either sinusoidally or linearly graded, and the solar cell wasmodeled to have a metallic backreflector corrugated periodically along a fixeddirection in the plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 27.7, '%', 2],[157.0, 22, '%', 2],[198.0, 22.89, '%', 3]

CI
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(91072, 91073)
 An efficiency of 27.7% with theconventional 2200-nm-thick CIG<missing VAR>S layer is predicted with sinusoidal bandgapgrading, in comparison to 22% efficiency obtained experimentally withhomogeneous bandgap.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 27.7, '%', 0],[26.0, 22, '%', 0],[67.0, 22.89, '%', 1]

S
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(91075, 91075)
 An efficiency of 27.7% with theconventional 2200-nm-thick CIG<missing VAR>S layer is predicted with sinusoidal bandgapgrading, in comparison to 22% efficiency obtained experimentally withhomogeneous bandgap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 27.7, '%', 0],[24.0, 22, '%', 0],[65.0, 22.89, '%', 1]

CI
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(91155, 91156)
 Furthermore, the inclusion of sinusoidal grading increasesthe predicted efficiency to 22.89% with just a 600-nm-thick CIG<missing VAR>S layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 27.7, '%', 1],[56.0, 22, '%', 1],[15.0, 22.89, '%', 0]

S
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(91158, 91158)
 Furthermore, the inclusion of sinusoidal grading increasesthe predicted efficiency to 22.89% with just a 600-nm-thick CIG<missing VAR>S layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 27.7, '%', 1],[59.0, 22, '%', 1],[18.0, 22.89, '%', 0]

CI
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(91246, 91247)
 Thesehigh efficiencies arise due to a large electron-hole-pair generation rate inthe narrow-bandgap regions and the elevation of the open-circuit voltage due toa wider bandgap in the region toward the front surface of the CIG<missing VAR>S layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 27.7, '%', 2],[147.0, 22, '%', 2],[106.0, 22.89, '%', 1]

S
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(91249, 91249)
 Thesehigh efficiencies arise due to a large electron-hole-pair generation rate inthe narrow-bandgap regions and the elevation of the open-circuit voltage due toa wider bandgap in the region toward the front surface of the CIG<missing VAR>S layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 27.7, '%', 2],[150.0, 22, '%', 2],[109.0, 22.89, '%', 1]

CI
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(91293, 91294)
 Thus,bandgap nonhomogeneity, in conjunction with periodic corrugation of thebackreflector, can be effective in realizing ultrathin CIG<missing VAR>S solar cells thatcan help overcome the scarcity of indium.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 27.7, '%', 3],[194.0, 22, '%', 3],[153.0, 22.89, '%', 2]

S
###Efficiency enhancement of ultrathin CIGS solar cells by optimal bandgap grading|Faiz Ahmad,Tom H. Anderson,Peter B. Monk,Akhlesh Lakhtakia###
(91296, 91296)
 Thus,bandgap nonhomogeneity, in conjunction with periodic corrugation of thebackreflector, can be effective in realizing ultrathin CIG<missing VAR>S solar cells thatcan help overcome the scarcity of indium.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 27.7, '%', 3],[197.0, 22, '%', 3],[156.0, 22.89, '%', 2]

Au
###Design guidelines for efficient plasmonic solar cells exploiting the trade-off between scattering and metallic absorption|Xiaofeng Li,Nicholas P. Hylton,Vincenzo Giannini,Ned J. Ekins-Daukes,Stefan A. Maier###
(92140, 92140)
 The workis extended to include comprehensive optoelectronic simulations of plasmonicsolar cells in which the scattering metals are made from either Au, Ag or Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Design guidelines for efficient plasmonic solar cells exploiting the trade-off between scattering and metallic absorption|Xiaofeng Li,Nicholas P. Hylton,Vincenzo Giannini,Ned J. Ekins-Daukes,Stefan A. Maier###
(92143, 92143)
 The workis extended to include comprehensive optoelectronic simulations of plasmonicsolar cells in which the scattering metals are made from either Au, Ag or Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Design guidelines for efficient plasmonic solar cells exploiting the trade-off between scattering and metallic absorption|Xiaofeng Li,Nicholas P. Hylton,Vincenzo Giannini,Ned J. Ekins-Daukes,Stefan A. Maier###
(92147, 92147)
 The workis extended to include comprehensive optoelectronic simulations of plasmonicsolar cells in which the scattering metals are made from either Au, Ag or Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Design guidelines for efficient plasmonic solar cells exploiting the trade-off between scattering and metallic absorption|Xiaofeng Li,Nicholas P. Hylton,Vincenzo Giannini,Ned J. Ekins-Daukes,Stefan A. Maier###
(92157, 92157)
We show that Al particles provide the closest approximation to the optimizedparticle refractive index and therefore exhibit the smallest parasiticabsorption and correspondingly lead to the greatest solar cell efficiencyenhancements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Design guidelines for efficient plasmonic solar cells exploiting the trade-off between scattering and metallic absorption|Xiaofeng Li,Nicholas P. Hylton,Vincenzo Giannini,Ned J. Ekins-Daukes,Stefan A. Maier###
(92226, 92226)
 Indeed, for the Al particles we report a full-band enhancement ofexternal quantum efficiency over the reference device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Solar water splitting: efficiency discussion|Jurga Juodkazyte,Gediminas Seniutinas,Benjaminas Sebeka,Irena Savickaja,Tadas Malinauskas,Kazimieras Badokas,Kestutis Juodkazis,Saulius Juodkazis###
(92309, 92309)
 The current state of the art in direct water splitting inphoto-electrochemical cells (PE<missing VAR>Cs) is presented together with (i) a case studyof water splitting using a simple solar cell with the most efficient watersplitting electrodes and (ii) a detailed mechanism analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1.23, 'V', 2],[191.0, 52, '%', 3],[204.0, 0.7, '%', 3],[298.0, 10, '%', 4],[320.0, 18, '%', 4]

Cs
###Solar water splitting: efficiency discussion|Jurga Juodkazyte,Gediminas Seniutinas,Benjaminas Sebeka,Irena Savickaja,Tadas Malinauskas,Kazimieras Badokas,Kestutis Juodkazis,Saulius Juodkazis###
(92311, 92311)
 The current state of the art in direct water splitting inphoto-electrochemical cells (PE<missing VAR>Cs) is presented together with (i) a case studyof water splitting using a simple solar cell with the most efficient watersplitting electrodes and (ii) a detailed mechanism analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 1.23, 'V', 2],[189.0, 52, '%', 3],[202.0, 0.7, '%', 3],[296.0, 10, '%', 4],[318.0, 18, '%', 4]

Si/Ni
###Solar water splitting: efficiency discussion|Jurga Juodkazyte,Gediminas Seniutinas,Benjaminas Sebeka,Irena Savickaja,Tadas Malinauskas,Kazimieras Badokas,Kestutis Juodkazis,Saulius Juodkazis###
(92520, 92522)
  Solar hydrogen production with electrical-to-hydrogen conversion efficiencyof 52% is demonstrated using a simple 0.7%-efficient n<missing VAR>-Si/Ni Schottky solarcell connected to a water electrolysis cell.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 1.23, 'V', 1],[20.0, 52, '%', 0],[7.0, 0.7, '%', 0],[85.0, 10, '%', 1],[107.0, 18, '%', 1]

Si
###Solar water splitting: efficiency discussion|Jurga Juodkazyte,Gediminas Seniutinas,Benjaminas Sebeka,Irena Savickaja,Tadas Malinauskas,Kazimieras Badokas,Kestutis Juodkazis,Saulius Juodkazis###
(92638, 92638)
 This case study shows thatseparation of the processes of solar harvesting and electrolysis avoidsphoto-electrode corrosion and utilizes optimal electrodes for hydrogen andoxygen evolution reactions and achieves 10% efficiency in light-to-hydrogenconversion with a standard 18% efficient household roof Si-solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 1.23, 'V', 2],[138.0, 52, '%', 1],[125.0, 0.7, '%', 1],[31.0, 10, '%', 0],[9.0, 18, '%', 0]

PbS/CdS
###Investigating the effect of different quantum dots on the absorption spectrum and characteristics of quantum dot sensitized solar cells|Hossein Vahid Dastjerdi,Hamidreza Fallah,Morteza Hajimahmoodzadeh###
(92976, 92980)
 Then we experimentally studied one of the cells thatgive the best simulation result (PbS/CdS co-sensitized).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

TiO2
###Investigating the effect of different quantum dots on the absorption spectrum and characteristics of quantum dot sensitized solar cells|Hossein Vahid Dastjerdi,Hamidreza Fallah,Morteza Hajimahmoodzadeh###
(93003, 93005)
 We deposited thequantum dots on transparent TiO2, and we obtained the light absorption,efficiency, and other characteristics of cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbS/CdS
###Investigating the effect of different quantum dots on the absorption spectrum and characteristics of quantum dot sensitized solar cells|Hossein Vahid Dastjerdi,Hamidreza Fallah,Morteza Hajimahmoodzadeh###
(93064, 93068)
 Further, we investigated theeffect of cobalt sulfide as the counter electrode in PbS/CdS, instead ofplatinum and gold, and we found that the efficiency has increased.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

At
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93208, 93208)
 At first,non-dominated sorting genetic algorithmII (NSG<missing VAR>A-II) producedPareto-optimal-solutions sets for respective cell designs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 15, 'different', 1]

II
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93223, 93224)
 At first,non-dominated sorting genetic algorithmII (NSG<missing VAR>A-II) producedPareto-optimal-solutions sets for respective cell designs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 15, 'different', 1]

NS
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93227, 93228)
 At first,non-dominated sorting genetic algorithmII (NSG<missing VAR>A-II) producedPareto-optimal-solutions sets for respective cell designs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 15, 'different', 1]

I
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93233, 93233)
 At first,non-dominated sorting genetic algorithmII (NSG<missing VAR>A-II) producedPareto-optimal-solutions sets for respective cell designs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 15, 'different', 1]

NS
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93280, 93281)
 Then, oninvestigating quantum efficiencies of all cell designs produced by NSG<missing VAR>A-II, weapplied a new multi-objective optimization algorithmII (OptIA-II) to discoverthe Pareto fronts of select (three) best cell designs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 15, 'different', 2]

II
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93285, 93286)
 Then, oninvestigating quantum efficiencies of all cell designs produced by NSG<missing VAR>A-II, weapplied a new multi-objective optimization algorithmII (OptIA-II) to discoverthe Pareto fronts of select (three) best cell designs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 15, 'different', 2]

II
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93305, 93306)
 Then, oninvestigating quantum efficiencies of all cell designs produced by NSG<missing VAR>A-II, weapplied a new multi-objective optimization algorithmII (OptIA-II) to discoverthe Pareto fronts of select (three) best cell designs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 15, 'different', 2]

I
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93310, 93310)
 Then, oninvestigating quantum efficiencies of all cell designs produced by NSG<missing VAR>A-II, weapplied a new multi-objective optimization algorithmII (OptIA-II) to discoverthe Pareto fronts of select (three) best cell designs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 15, 'different', 2]

I
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93314, 93314)
 Then, oninvestigating quantum efficiencies of all cell designs produced by NSG<missing VAR>A-II, weapplied a new multi-objective optimization algorithmII (OptIA-II) to discoverthe Pareto fronts of select (three) best cell designs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 15, 'different', 2]

I
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93348, 93348)
 Our designed OptIA-IIalgorithm improved the quantum efficiencies of all select cell designs andreduced their fabrication costs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 15, 'different', 3]

II
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93351, 93352)
 Our designed OptIA-IIalgorithm improved the quantum efficiencies of all select cell designs andreduced their fabrication costs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 15, 'different', 3]

O
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93423, 93423)
 We observed that the cell design comprising anoptimally doped zinc-oxide-based transparent conductive oxide (T<missing VAR>CO) layer andrough silver back reflector (BR) offered a quantum efficiency (Qe) of0.6031.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 15, 'different', 4]

B
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93440, 93440)
 We observed that the cell design comprising anoptimally doped zinc-oxide-based transparent conductive oxide (T<missing VAR>CO) layer andrough silver back reflector (BR) offered a quantum efficiency (Qe) of0.6031.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 15, 'different', 4]

CO
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93518, 93519)
 It derives a relationship between quantum efficiency, Qeof a cell with its T<missing VAR>CO layers<missing VAR> doping methods and T<missing VAR>CO and BR<missing VAR> layers<missing VAR> materialtypes.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 15, 'different', 6]

CO
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93531, 93532)
 It derives a relationship between quantum efficiency, Qeof a cell with its T<missing VAR>CO layers<missing VAR> doping methods and T<missing VAR>CO and BR<missing VAR> layers<missing VAR> materialtypes.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 15, 'different', 6]

B
###Design and characterization of effective solar cells|Varun Ojha,Giorgio Jansen,Andrea Patane,Antonino La Magna,Vittorio Romano,Giuseppe Nicosia###
(93536, 93536)
 It derives a relationship between quantum efficiency, Qeof a cell with its T<missing VAR>CO layers<missing VAR> doping methods and T<missing VAR>CO and BR<missing VAR> layers<missing VAR> materialtypes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 15, 'different', 6]

In
###Thermoelectrical Field Effects in Low Dimensional Structure Solar Cells|Stefan Kettemann,Jean-Francois Guillemoles###
(93801, 93801)
 In particular, it isshown that the insertion of a quantum well can enhance the efficiency beyondone of the single gap cell, due to the presence of temperature jumps at theheterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Polymer-Fullerene Bulk Heterojunction Solar Cells|Carsten Deibel,Vladimir Dyakonov###
(94027, 94027)
 In this review, we will present anoverview of the physical function of organic solar cells, theirstate-of-the-art performance and limitations, as well as novel concepts toachieve a better material stability and higher power conversion efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Carrier Multiplication in Graphene|Torben Winzer,Andreas Knorr,Ermin Malic###
(94212, 94212)
 In particular, it is of fundamental interest to address thequestion whether Auger-type processes significantly influence the carrierdynamics in graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Reduced Coulomb interaction in organic solar cells by the introduction of inorganic high-k nanostructured materials|Miriam Engel,David Schaefer,Daniel Erni,Niels Benson,Roland Schmechel###
(94511, 94511)
 In this article a concept is introduced, which allows for reduced Coulombinteraction in organic solar cells and as such for enhanced power conversionefficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 20, 'nm', 2]

P3H
###Reduced Coulomb interaction in organic solar cells by the introduction of inorganic high-k nanostructured materials|Miriam Engel,David Schaefer,Daniel Erni,Niels Benson,Roland Schmechel###
(94740, 94742)
 The concept isimplemented using P3HT<missing VAR>PCBM<missing VAR> solar cells with integrated high-k<missing VAR> nanoparticles(strontium titanate).
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 20, 'nm', 1]

PCB
###Reduced Coulomb interaction in organic solar cells by the introduction of inorganic high-k nanostructured materials|Miriam Engel,David Schaefer,Daniel Erni,Niels Benson,Roland Schmechel###
(94744, 94746)
 The concept isimplemented using P3HT<missing VAR>PCBM<missing VAR> solar cells with integrated high-k<missing VAR> nanoparticles(strontium titanate).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 20, 'nm', 1]

Ga1-ySb
###Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(94846, 94850)
Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[135.0, 0, '<', 1],[311.0, 15, '%', 5]

Ga1-xAs
###Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(94853, 94857)
Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[128.0, 0, '<', 1],[304.0, 15, '%', 5]

II
###Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(94861, 94862)
Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0, '<', 1],[299.0, 15, '%', 5]

GaAs
###Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(94909, 94910)
 We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAsabsorber with built-in GaSb type-II quantum dots (Q<missing VAR>Ds) [a gradual AlxGa1-xAsabsorber with built-in AlyGa1-ySb Q<missing VAR>Ds (0<xy<0.40) as a variant] separated fromthe depletion region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0, '<', 0],[251.0, 15, '%', 4]

Ga1-xAs
###Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(94921, 94925)
 We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAsabsorber with built-in GaSb type-II quantum dots (Q<missing VAR>Ds) [a gradual AlxGa1-xAsabsorber with built-in AlyGa1-ySb Q<missing VAR>Ds (0<xy<0.40) as a variant] separated fromthe depletion region.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[60.0, 0, '<', 0],[236.0, 15, '%', 4]

GaSb
###Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(94936, 94937)
 We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAsabsorber with built-in GaSb type-II quantum dots (Q<missing VAR>Ds) [a gradual AlxGa1-xAsabsorber with built-in AlyGa1-ySb Q<missing VAR>Ds (0<xy<0.40) as a variant] separated fromthe depletion region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 0, '<', 0],[224.0, 15, '%', 4]

II
###Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(94941, 94942)
 We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAsabsorber with built-in GaSb type-II quantum dots (Q<missing VAR>Ds) [a gradual AlxGa1-xAsabsorber with built-in AlyGa1-ySb Q<missing VAR>Ds (0<xy<0.40) as a variant] separated fromthe depletion region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0, '<', 0],[219.0, 15, '%', 4]

Ds
###Modification of band alignment at interface of AlyGa1-ySb/AlxGa1-xAs type-II quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions|A. Kechiantz,A. Afanasev,J. -L. Lazzari###
(94950, 94950)
 We propose a new intermediate band GaAs solar cell comprising an AlxGa1-xAsabsorber with built-in GaSb type-II quantum dots (Q<missing VAR>Ds) [a gradual AlxGa1-xAsabsorber with built-in AlyGa1-ySb Q<missing VAR>Ds (0<xy<0.40) as a variant] separated fromthe depletion region.
EXCEPTION 3: IndexError for Ds
Ga1-xAs
[35.0, 0, '<', 0],[211.0, 15, '%', 4]

(IBSC)
###Study on the Fermi level of microstructured Silicon with impurities introduced by chalcogenides and their affect on solar cell efficiency|Huili He,Changshui Chen,Fang Wang,Songhao Liu###
(95363, 95368)
 So it holds great promise in theintermediate band solar cell (IBSC).
Featurization successful!
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IBSC
###Study on the Fermi level of microstructured Silicon with impurities introduced by chalcogenides and their affect on solar cell efficiency|Huili He,Changshui Chen,Fang Wang,Songhao Liu###
(95541, 95544)
 Then the theoretical conversion efficiency of thecorresponding IBSC is discussed with the Detailed Balance Theory.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96092, 96094)
 We systematically investigate the holeinjection dynamics from M<missing VAR>APbI3 perovskite to three typical hole transportmaterials (HT<missing VAR>Ms) PEDOT<missing VAR>PSS, PT<missing VAR>AA and NiOx<missing VAR> by means of pump-probetransmission measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 1, 'and', 2],[185.0, 2, 'ps', 2],[213.0, 40, 'ps', 2]

H
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96112, 96112)
 We systematically investigate the holeinjection dynamics from M<missing VAR>APbI3 perovskite to three typical hole transportmaterials (HT<missing VAR>Ms) PEDOT<missing VAR>PSS, PT<missing VAR>AA and NiOx<missing VAR> by means of pump-probetransmission measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 1, 'and', 2],[167.0, 2, 'ps', 2],[195.0, 40, 'ps', 2]

P
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96117, 96117)
 We systematically investigate the holeinjection dynamics from M<missing VAR>APbI3 perovskite to three typical hole transportmaterials (HT<missing VAR>Ms) PEDOT<missing VAR>PSS, PT<missing VAR>AA and NiOx<missing VAR> by means of pump-probetransmission measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 1, 'and', 2],[162.0, 2, 'ps', 2],[190.0, 40, 'ps', 2]

O
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96120, 96120)
 We systematically investigate the holeinjection dynamics from M<missing VAR>APbI3 perovskite to three typical hole transportmaterials (HT<missing VAR>Ms) PEDOT<missing VAR>PSS, PT<missing VAR>AA and NiOx<missing VAR> by means of pump-probetransmission measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1, 'and', 2],[159.0, 2, 'ps', 2],[187.0, 40, 'ps', 2]

PSS
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96122, 96124)
 We systematically investigate the holeinjection dynamics from M<missing VAR>APbI3 perovskite to three typical hole transportmaterials (HT<missing VAR>Ms) PEDOT<missing VAR>PSS, PT<missing VAR>AA and NiOx<missing VAR> by means of pump-probetransmission measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1, 'and', 2],[155.0, 2, 'ps', 2],[183.0, 40, 'ps', 2]

P
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96127, 96127)
 We systematically investigate the holeinjection dynamics from M<missing VAR>APbI3 perovskite to three typical hole transportmaterials (HT<missing VAR>Ms) PEDOT<missing VAR>PSS, PT<missing VAR>AA and NiOx<missing VAR> by means of pump-probetransmission measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 1, 'and', 2],[152.0, 2, 'ps', 2],[180.0, 40, 'ps', 2]

NiO
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96134, 96135)
 We systematically investigate the holeinjection dynamics from M<missing VAR>APbI3 perovskite to three typical hole transportmaterials (HT<missing VAR>Ms) PEDOT<missing VAR>PSS, PT<missing VAR>AA and NiOx<missing VAR> by means of pump-probetransmission measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 1, 'and', 2],[144.0, 2, 'ps', 2],[172.0, 40, 'ps', 2]

PbI3/H
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96166, 96170)
 We photoexcite only near the M<missing VAR>APbI3/HTM interfaceor near the back surface, and measure the differential transient transmissionbetween the two excitation configurations to extract the carrier dynamicsdirectly related to the hole injection.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[108.0, 1, 'and', 1],[109.0, 2, 'ps', 1],[137.0, 40, 'ps', 1]

P
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96256, 96256)
 The differential transmission signalsdirectly monitor the hole injections to PT<missing VAR>AA and PEDOT<missing VAR>PSS being completewithin 1 and 2 ps, respectively, and that to NiOx<missing VAR> exhibiting an additionalslow process of 40 ps time scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1, 'and', 0],[23.0, 2, 'ps', 0],[51.0, 40, 'ps', 0]

P
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96263, 96263)
 The differential transmission signalsdirectly monitor the hole injections to PT<missing VAR>AA and PEDOT<missing VAR>PSS being completewithin 1 and 2 ps, respectively, and that to NiOx<missing VAR> exhibiting an additionalslow process of 40 ps time scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1, 'and', 0],[16.0, 2, 'ps', 0],[44.0, 40, 'ps', 0]

O
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96266, 96266)
 The differential transmission signalsdirectly monitor the hole injections to PT<missing VAR>AA and PEDOT<missing VAR>PSS being completewithin 1 and 2 ps, respectively, and that to NiOx<missing VAR> exhibiting an additionalslow process of 40 ps time scale.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1, 'and', 0],[13.0, 2, 'ps', 0],[41.0, 40, 'ps', 0]

PSS
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96268, 96270)
 The differential transmission signalsdirectly monitor the hole injections to PT<missing VAR>AA and PEDOT<missing VAR>PSS being completewithin 1 and 2 ps, respectively, and that to NiOx<missing VAR> exhibiting an additionalslow process of 40 ps time scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, 'and', 0],[9.0, 2, 'ps', 0],[37.0, 40, 'ps', 0]

NiO
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96291, 96292)
 The differential transmission signalsdirectly monitor the hole injections to PT<missing VAR>AA and PEDOT<missing VAR>PSS being completewithin 1 and 2 ps, respectively, and that to NiOx<missing VAR> exhibiting an additionalslow process of 40 ps time scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1, 'and', 0],[12.0, 2, 'ps', 0],[15.0, 40, 'ps', 0]

PbI3/H
###Direct Observation of Sub-picosecond Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy|Kunie Ishioka,Bobby G. Barker Jr.,Masatoshi Yanagida,Yasuhiro Shirai,Kenjiro Miyano###
(96356, 96360)
 The obtained injection dynamics are discussedin comparison with the device performance of the solar cells containing thesame M<missing VAR>APbI3/HTM interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[78.0, 1, 'and', 1],[77.0, 2, 'ps', 1],[49.0, 40, 'ps', 1]

C
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96402, 96402)
Role of contact work function, back surface field and conduction band offset in CZTS solar cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 70, '%', 4],[274.0, 5.2, 'eV', 6],[321.0, 0.1, 'eV', 8]

S
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96405, 96405)
Role of contact work function, back surface field and conduction band offset in CZTS solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 70, '%', 4],[271.0, 5.2, 'eV', 6],[318.0, 0.1, 'eV', 8]

Cu2ZnSnS4
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96432, 96437)
 We employ simulation based approach for enhancing the efficiency of Cu2ZnSnS4(CZTS) based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 70, '%', 3],[239.0, 5.2, 'eV', 5],[286.0, 0.1, 'eV', 7]

C
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96441, 96441)
 We employ simulation based approach for enhancing the efficiency of Cu2ZnSnS4(CZTS) based solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 70, '%', 3],[235.0, 5.2, 'eV', 5],[282.0, 0.1, 'eV', 7]

S
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96444, 96444)
 We employ simulation based approach for enhancing the efficiency of Cu2ZnSnS4(CZTS) based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 70, '%', 3],[232.0, 5.2, 'eV', 5],[279.0, 0.1, 'eV', 7]

(CBO)
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96520, 96524)
 We then explore the effects of (a) conduction bandoffset (CBO) at CZTS/CdS junction, (b) back surface field (BSF) due to anadditional layer with higher carrier density, and (c) high work function backcontact.
Featurization successful!
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 70, '%', 1],[152.0, 5.2, 'eV', 3],[199.0, 0.1, 'eV', 5]

C
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96528, 96528)
 We then explore the effects of (a) conduction bandoffset (CBO) at CZTS/CdS junction, (b) back surface field (BSF) due to anadditional layer with higher carrier density, and (c) high work function backcontact.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 70, '%', 1],[148.0, 5.2, 'eV', 3],[195.0, 0.1, 'eV', 5]

S/CdS
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96531, 96534)
 We then explore the effects of (a) conduction bandoffset (CBO) at CZTS/CdS junction, (b) back surface field (BSF) due to anadditional layer with higher carrier density, and (c) high work function backcontact.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[73.0, 70, '%', 1],[142.0, 5.2, 'eV', 3],[189.0, 0.1, 'eV', 5]

(BSF)
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96549, 96553)
 We then explore the effects of (a) conduction bandoffset (CBO) at CZTS/CdS junction, (b) back surface field (BSF) due to anadditional layer with higher carrier density, and (c) high work function backcontact.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 70, '%', 1],[123.0, 5.2, 'eV', 3],[170.0, 0.1, 'eV', 5]

BSF
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96634, 96636)
 We also observe that utilizing BSF in the configurationcan reduce the high work function requirement of the back contact.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 70, '%', 1],[40.0, 5.2, 'eV', 1],[87.0, 0.1, 'eV', 3]

Ni
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96687, 96687)
, using Ni), a BSF layer (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 70, '%', 3],[11.0, 5.2, 'eV', 1],[36.0, 0.1, 'eV', 1]

BSF
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96693, 96695)
, using Ni), a BSF layer (e.g.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 70, '%', 3],[17.0, 5.2, 'eV', 1],[28.0, 0.1, 'eV', 1]

S
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96709, 96709)
, using SnS), and a CBOof 0.1 eV (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 70, '%', 4],[33.0, 5.2, 'eV', 2],[14.0, 0.1, 'eV', 0]

CBO
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96717, 96719)
, using SnS), and a CBOof 0.1 eV (e.g.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 70, '%', 4],[41.0, 5.2, 'eV', 2],[4.0, 0.1, 'eV', 0]

S
###Role of contact work function, back surface field and conduction band offset in CZTS solar cell|Atul Kumar,Ajay D. Thakur###
(96735, 96735)
, using ZnS) constitute an optimal configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 70, '%', 5],[59.0, 5.2, 'eV', 3],[12.0, 0.1, 'eV', 1]

(II)
###Organic-inorganic Copper(II)-based Material: a Low-Toxic, Highly Stable Light Absorber beyond Organolead Perovskites|Xiaolei Li,Xiangli Zhong,Yue Hu,Bochao Li,Yusong Sheng,Yang Zhang,Chao Weng,Ming Feng,Hongwei Han,Jinbin Wang###
(96760, 96763)
Organic-inorganic Copper(II)-based Material a Low-Toxic, Highly Stable Light Absorber beyond Organolead Perovskites.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 90, 'degree', 3],[331.0, 0.5, '%', 5]

C6H4NH2CuBr2I
###Organic-inorganic Copper(II)-based Material: a Low-Toxic, Highly Stable Light Absorber beyond Organolead Perovskites|Xiaolei Li,Xiangli Zhong,Yue Hu,Bochao Li,Yusong Sheng,Yang Zhang,Chao Weng,Ming Feng,Hongwei Han,Jinbin Wang###
(96909, 96919)
 Here, for the first time,we report a lead-free, highly stable C6H4NH2CuBr2I compound.
Featurization terminated normally.
0.35294117647058826,0,0,0,0,0.35294117647058826,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 90, 'degree', 1],[175.0, 0.5, '%', 3]

C6H4NH2CuBr2I
###Organic-inorganic Copper(II)-based Material: a Low-Toxic, Highly Stable Light Absorber beyond Organolead Perovskites|Xiaolei Li,Xiangli Zhong,Yue Hu,Bochao Li,Yusong Sheng,Yang Zhang,Chao Weng,Ming Feng,Hongwei Han,Jinbin Wang###
(96926, 96936)
 The C6H4NH2CuBr2Ifilms exhibit extraordinary hydrophobic behavior with a contact angle ofapproximately 90 degree, and their X<missing VAR>-ray diffraction patterns remain unchangedeven after four hours of water immersion.
Featurization terminated normally.
0.35294117647058826,0,0,0,0,0.35294117647058826,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 90, 'degree', 0],[158.0, 0.5, '%', 2]

UV
###Organic-inorganic Copper(II)-based Material: a Low-Toxic, Highly Stable Light Absorber beyond Organolead Perovskites|Xiaolei Li,Xiangli Zhong,Yue Hu,Bochao Li,Yusong Sheng,Yang Zhang,Chao Weng,Ming Feng,Hongwei Han,Jinbin Wang###
(96996, 96997)
 UV-Vis absorption spectrum shows thatC6H4NH2CuBr2I compound has an excellent optical absorption over the entirevisible spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[35.0, 90, 'degree', 1],[97.0, 0.5, '%', 1]

C6H4NH2CuBr2I
###Organic-inorganic Copper(II)-based Material: a Low-Toxic, Highly Stable Light Absorber beyond Organolead Perovskites|Xiaolei Li,Xiangli Zhong,Yue Hu,Bochao Li,Yusong Sheng,Yang Zhang,Chao Weng,Ming Feng,Hongwei Han,Jinbin Wang###
(97010, 97020)
 UV-Vis absorption spectrum shows thatC6H4NH2CuBr2I compound has an excellent optical absorption over the entirevisible spectrum.
Featurization terminated normally.
0.35294117647058826,0,0,0,0,0.35294117647058826,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 90, 'degree', 1],[74.0, 0.5, '%', 1]

In
###Triplet-sensitization by lead halide perovskite thin films for near-infrared-to-visible upconversion|Lea Nienhaus,Juan-Pablo Correa-Baena,Sarah Wieghold,Markus Einzinger,Ting-An Lin,Katherine E. Shulenberger,Nathan D. Klein,Mengfei Wu,Vladimir Bulovic,Tonio Buonassisi,Marc A. Baldo,Moungi G. Bawendi###
(97299, 97299)
 In this contribution, we takeadvantage of long carrier lifetimes and carrier diffusion lengths in perovskitethin films, their high absorption cross sections throughout the visiblespectrum, as well as the strong spin-orbit coupling owing to the abundance ofheavy atoms to sensitize the upconverter rubrene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 3, '%', 2],[202.0, 785, 'nm', 2]

In
###Pitfalls and prospects of optical spectroscopy to characterize perovskite-transport layer interfaces|Eline M. Hutter,Thomas Kirchartz,Bruno Ehrler,David Cahen,Elizabeth von Hauff###
(97637, 97637)
 In this perspective, we critically examine theapplication of optical spectroscopy to characterize the quality of thetransport layer-perovskite interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Pitfalls and prospects of optical spectroscopy to characterize perovskite-transport layer interfaces|Eline M. Hutter,Thomas Kirchartz,Bruno Ehrler,David Cahen,Elizabeth von Hauff###
(97722, 97722)
 We highlight the power of complementarystudies that use both continuous wave (cw) and time-resolved photoluminescence(PL) to understand non-radiative losses, and additional transientspectroscopies for characterizing the potential for loss-less carrierextraction at the solar cell interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Ultrafast polarization control of zero-bias photocurrent and terahertz emission in hybrid organic perovskites|Petr A. Obraztsov,Dmitry Lyashenko,Pavel A. Chizhov,Kuniaki Konishi,Natsuki Nemoto,Makoto Kuwata-Gonokami,Eric Welch,Alexander N. Obraztsov,Alex Zakhidov###
(97889, 97889)
 Methylammonium lead iodide (M<missing VAR>API) is a benchmark hybrid organic perovskitematerial, which is used for the low-cost, printed solar cells with over 20percent power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 150, 'fs', 2]

PI
###Ultrafast polarization control of zero-bias photocurrent and terahertz emission in hybrid organic perovskites|Petr A. Obraztsov,Dmitry Lyashenko,Pavel A. Chizhov,Kuniaki Konishi,Natsuki Nemoto,Makoto Kuwata-Gonokami,Eric Welch,Alexander N. Obraztsov,Alex Zakhidov###
(97965, 97966)
 Yet, the nature of light-matterinteraction in M<missing VAR>API as well as the exact physical mechanism behind deviceoperation is currently debated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 150, 'fs', 1]

PI
###Ultrafast polarization control of zero-bias photocurrent and terahertz emission in hybrid organic perovskites|Petr A. Obraztsov,Dmitry Lyashenko,Pavel A. Chizhov,Kuniaki Konishi,Natsuki Nemoto,Makoto Kuwata-Gonokami,Eric Welch,Alexander N. Obraztsov,Alex Zakhidov###
(98034, 98035)
 Here we report room temperature, ultrafastphotocurrent and freespace terahertz (T<missing VAR>Hz) emission generation from unbiasedM<missing VAR>API induced by 150 fs light pulses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 150, 'fs', 0]

BPV
###Ultrafast polarization control of zero-bias photocurrent and terahertz emission in hybrid organic perovskites|Petr A. Obraztsov,Dmitry Lyashenko,Pavel A. Chizhov,Kuniaki Konishi,Natsuki Nemoto,Makoto Kuwata-Gonokami,Eric Welch,Alexander N. Obraztsov,Alex Zakhidov###
(98075, 98077)
 Polarization dependence of the observedphotoresponse is consistent with the Bulk Photovoltaic Effect (BPVE) caused bya combination of injection and shift currents.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 150, 'fs', 1]

BPV
###Ultrafast polarization control of zero-bias photocurrent and terahertz emission in hybrid organic perovskites|Petr A. Obraztsov,Dmitry Lyashenko,Pavel A. Chizhov,Kuniaki Konishi,Natsuki Nemoto,Makoto Kuwata-Gonokami,Eric Welch,Alexander N. Obraztsov,Alex Zakhidov###
(98162, 98164)
 Moreover, ballistic by nature shift and injection BPVE<missing VAR>photocurrents may enable third generation perovskite solar cells withefficiency that exceed the ShockleyQueisser limit.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 150, 'fs', 3]

II
###Device physics of van der Waals heterojunction solar cells|Marco M. Furchi,Florian Höller,Lukas Dobusch,Dmitry K. Polyushkin,Simone Schuler,Thomas Mueller###
(98407, 98408)
 Here, wepresent a device model that is able to fully reproduce the current-voltagecharacteristics of type-II van der Waals heterojunctions under opticalillumination, including some peculiar behaviors such as exceedingly highideality factors or bias-dependent photocurrents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In0.51Ga0.49P
###Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations|Mohammad Jobayer Hossain,Bibek Tiwari,Indranil Bhattacharya###
(98651, 98655)
 A high theoretical efficiency of 47.2% was achieved by a novel combination ofIn0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in asimulated quadruple junction solar cell under 1 sun concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.245,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 47.2, '%', 0],[41.0, 1, 'sun', 0],[60.0, 1.9, 'eV', 1],[62.0, 1.42, 'eV', 1],[64.0, 1.08, 'eV', 1],[67.0, 0.55, 'eV', 1],[210.0, 14.7, 'mA', 4],[213.0, 2, ',', 4],[215.0, 3.38, 'V', 4],[235.0, 1, 'sun', 5],[240.0, 1.5, 'global', 5]

GaAs
###Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations|Mohammad Jobayer Hossain,Bibek Tiwari,Indranil Bhattacharya###
(98658, 98659)
 A high theoretical efficiency of 47.2% was achieved by a novel combination ofIn0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in asimulated quadruple junction solar cell under 1 sun concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 47.2, '%', 0],[37.0, 1, 'sun', 0],[56.0, 1.9, 'eV', 1],[58.0, 1.42, 'eV', 1],[60.0, 1.08, 'eV', 1],[63.0, 0.55, 'eV', 1],[206.0, 14.7, 'mA', 4],[209.0, 2, ',', 4],[211.0, 3.38, 'V', 4],[231.0, 1, 'sun', 5],[236.0, 1.5, 'global', 5]

In0.24Ga0.76As
###Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations|Mohammad Jobayer Hossain,Bibek Tiwari,Indranil Bhattacharya###
(98662, 98666)
 A high theoretical efficiency of 47.2% was achieved by a novel combination ofIn0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in asimulated quadruple junction solar cell under 1 sun concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 47.2, '%', 0],[30.0, 1, 'sun', 0],[49.0, 1.9, 'eV', 1],[51.0, 1.42, 'eV', 1],[53.0, 1.08, 'eV', 1],[56.0, 0.55, 'eV', 1],[199.0, 14.7, 'mA', 4],[202.0, 2, ',', 4],[204.0, 3.38, 'V', 4],[224.0, 1, 'sun', 5],[229.0, 1.5, 'global', 5]

In0.19Ga0.81Sb
###Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations|Mohammad Jobayer Hossain,Bibek Tiwari,Indranil Bhattacharya###
(98670, 98674)
 A high theoretical efficiency of 47.2% was achieved by a novel combination ofIn0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in asimulated quadruple junction solar cell under 1 sun concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.405,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.095,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 47.2, '%', 0],[22.0, 1, 'sun', 0],[41.0, 1.9, 'eV', 1],[43.0, 1.42, 'eV', 1],[45.0, 1.08, 'eV', 1],[48.0, 0.55, 'eV', 1],[191.0, 14.7, 'mA', 4],[194.0, 2, ',', 4],[196.0, 3.38, 'V', 4],[216.0, 1, 'sun', 5],[221.0, 1.5, 'global', 5]

In
###Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations|Mohammad Jobayer Hossain,Bibek Tiwari,Indranil Bhattacharya###
(98880, 98880)
 In our design, we considered 1 sun, AM<missing VAR> 1.5 global solar spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 47.2, '%', 5],[184.0, 1, 'sun', 5],[165.0, 1.9, 'eV', 4],[163.0, 1.42, 'eV', 4],[161.0, 1.08, 'eV', 4],[158.0, 0.55, 'eV', 4],[15.0, 14.7, 'mA', 1],[12.0, 2, ',', 1],[10.0, 3.38, 'V', 1],[10.0, 1, 'sun', 0],[15.0, 1.5, 'global', 0]

In
###Diffusive external light-trap for solar cells|Ido Frenkel,Shilpi Shital,Avi Niv###
(99151, 99151)
 In this paper, we study the effectiveness of externallight-traps with diffusive inner reflecting walls.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99294, 99295)
 Non-fullerene acceptor (NFA)-based ternary bulk heterojunction solar cells(T<missing VAR>SC) are the most efficient organic solar cells (OSCs) today due to theirbroader absorption and quantum efficiencies (QE) often surpassing those ofcorresponding binary blends.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.5, 'eV', 2]

C
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99315, 99315)
 Non-fullerene acceptor (NFA)-based ternary bulk heterojunction solar cells(T<missing VAR>SC) are the most efficient organic solar cells (OSCs) today due to theirbroader absorption and quantum efficiencies (QE) often surpassing those ofcorresponding binary blends.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0.5, 'eV', 2]

(OSCs)
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99332, 99336)
 Non-fullerene acceptor (NFA)-based ternary bulk heterojunction solar cells(T<missing VAR>SC) are the most efficient organic solar cells (OSCs) today due to theirbroader absorption and quantum efficiencies (QE) often surpassing those ofcorresponding binary blends.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.5, 'eV', 2]

PB
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99428, 99429)
 We study how the energetics driving chargetransfer at the electron donorelectron acceptor (D<missing VAR>/A) interfaces impact the QEin blends of PBD<missing VAR>B-T<missing VAR>-2F donor with several pairs of lower bandgap NFAs.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.5, 'eV', 1]

B
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99431, 99431)
 We study how the energetics driving chargetransfer at the electron donorelectron acceptor (D<missing VAR>/A) interfaces impact the QEin blends of PBD<missing VAR>B-T<missing VAR>-2F donor with several pairs of lower bandgap NFAs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.5, 'eV', 1]

F
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99436, 99436)
 We study how the energetics driving chargetransfer at the electron donorelectron acceptor (D<missing VAR>/A) interfaces impact the QEin blends of PBD<missing VAR>B-T<missing VAR>-2F donor with several pairs of lower bandgap NFAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.5, 'eV', 1]

NFAs
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99452, 99454)
 We study how the energetics driving chargetransfer at the electron donorelectron acceptor (D<missing VAR>/A) interfaces impact the QEin blends of PBD<missing VAR>B-T<missing VAR>-2F donor with several pairs of lower bandgap NFAs.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.5, 'eV', 1]

As
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99457, 99457)
 As inbinary blends, the ionization energy offset between donor and acceptor(DeltaIE) controls the QE and maximizes for DeltaIE<missing VAR> > 0.5 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.5, 'eV', 0]

I
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99486, 99486)
 As inbinary blends, the ionization energy offset between donor and acceptor(DeltaIE) controls the QE and maximizes for DeltaIE<missing VAR> > 0.5 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.5, 'eV', 0]

I
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99504, 99504)
 As inbinary blends, the ionization energy offset between donor and acceptor(DeltaIE) controls the QE and maximizes for DeltaIE<missing VAR> > 0.5 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.5, 'eV', 0]

I
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99516, 99516)
 However,DeltaIE<missing VAR> is not controlled by the individual NFAs IEs but by their average,weighted for their blending ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.5, 'eV', 1]

NFAs
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99531, 99533)
 However,DeltaIE<missing VAR> is not controlled by the individual NFAs IEs but by their average,weighted for their blending ratio.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.5, 'eV', 1]

IEs
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99535, 99536)
 However,DeltaIE<missing VAR> is not controlled by the individual NFAs IEs but by their average,weighted for their blending ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0
[27.0, 0.5, 'eV', 1]

PB
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99580, 99581)
 Using this property, we improved the QE of aPBD<missing VAR>B-T<missing VAR>-2FIE<missing VAR>ICO binary blend that had an insufficient DeltaIE<missing VAR> for chargegeneration by adding a deep IE<missing VAR> third component IT<missing VAR>-4F.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.5, 'eV', 2]

B
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99583, 99583)
 Using this property, we improved the QE of aPBD<missing VAR>B-T<missing VAR>-2FIE<missing VAR>ICO binary blend that had an insufficient DeltaIE<missing VAR> for chargegeneration by adding a deep IE<missing VAR> third component IT<missing VAR>-4F.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.5, 'eV', 2]

FI
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99588, 99589)
 Using this property, we improved the QE of aPBD<missing VAR>B-T<missing VAR>-2FIE<missing VAR>ICO binary blend that had an insufficient DeltaIE<missing VAR> for chargegeneration by adding a deep IE<missing VAR> third component IT<missing VAR>-4F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.5, 'eV', 2]

ICO
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99591, 99593)
 Using this property, we improved the QE of aPBD<missing VAR>B-T<missing VAR>-2FIE<missing VAR>ICO binary blend that had an insufficient DeltaIE<missing VAR> for chargegeneration by adding a deep IE<missing VAR> third component IT<missing VAR>-4F.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.5, 'eV', 2]

I
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99608, 99608)
 Using this property, we improved the QE of aPBD<missing VAR>B-T<missing VAR>-2FIE<missing VAR>ICO binary blend that had an insufficient DeltaIE<missing VAR> for chargegeneration by adding a deep IE<missing VAR> third component IT<missing VAR>-4F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.5, 'eV', 2]

I
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99626, 99626)
 Using this property, we improved the QE of aPBD<missing VAR>B-T<missing VAR>-2FIE<missing VAR>ICO binary blend that had an insufficient DeltaIE<missing VAR> for chargegeneration by adding a deep IE<missing VAR> third component IT<missing VAR>-4F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 0.5, 'eV', 2]

I
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99633, 99633)
 Using this property, we improved the QE of aPBD<missing VAR>B-T<missing VAR>-2FIE<missing VAR>ICO binary blend that had an insufficient DeltaIE<missing VAR> for chargegeneration by adding a deep IE<missing VAR> third component IT<missing VAR>-4F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.5, 'eV', 2]

F
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99637, 99637)
 Using this property, we improved the QE of aPBD<missing VAR>B-T<missing VAR>-2FIE<missing VAR>ICO binary blend that had an insufficient DeltaIE<missing VAR> for chargegeneration by adding a deep IE<missing VAR> third component IT<missing VAR>-4F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.5, 'eV', 2]

NFAs
###Rationalizing the influence of tunable energy levels on quantum efficiency to design optimal non-fullerene acceptor-based ternary organic solar cells|Safakath Karuthedath,Sri H. K . Paleti,Anirudh Sharma,Hang Yin,Catherine S. P. De Castro,Si Chen,Han Xi,Nisreen Alshehri,Nicolas Ramos,Jafar I. Khan,Jaime Martin,Gang Li,Frédéric Laquai,Derya Baran,Julien Gorenflot###
(99644, 99646)
 Combining two NFAsenables to optimize the D<missing VAR>/A energy alignment and cells QE without molecularengineering.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.5, 'eV', 3]

(NFAs)
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99742, 99746)
 Efficiencies of organic solar cells have practically doubled since thedevelopment of non-fullerene acceptors (NFAs).
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 75, 'Debye', 4]

NF
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99765, 99766)
 However, generic chemical designrules for donor-NFA combinations are still needed.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 75, 'Debye', 3]

PC
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99896, 99897)
 By analyzing a series of PCE<missing VAR>10NFA solar cells, with NFAsincluding Y6, IE<missing VAR>ICO, and IT<missing VAR>IC, as well as their halogenated derivatives, it issuggested that the molecular quadrupole moment of ca 75 Debye A balances thelosses in the open circuit voltage and gains in charge generation efficiency.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 75, 'Debye', 0]

NF
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99900, 99901)
 By analyzing a series of PCE<missing VAR>10NFA solar cells, with NFAsincluding Y6, IE<missing VAR>ICO, and IT<missing VAR>IC, as well as their halogenated derivatives, it issuggested that the molecular quadrupole moment of ca 75 Debye A balances thelosses in the open circuit voltage and gains in charge generation efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 75, 'Debye', 0]

NFAs
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99911, 99913)
 By analyzing a series of PCE<missing VAR>10NFA solar cells, with NFAsincluding Y6, IE<missing VAR>ICO, and IT<missing VAR>IC, as well as their halogenated derivatives, it issuggested that the molecular quadrupole moment of ca 75 Debye A balances thelosses in the open circuit voltage and gains in charge generation efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 75, 'Debye', 0]

Y6
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99918, 99919)
 By analyzing a series of PCE<missing VAR>10NFA solar cells, with NFAsincluding Y6, IE<missing VAR>ICO, and IT<missing VAR>IC, as well as their halogenated derivatives, it issuggested that the molecular quadrupole moment of ca 75 Debye A balances thelosses in the open circuit voltage and gains in charge generation efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 75, 'Debye', 0]

I
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99922, 99922)
 By analyzing a series of PCE<missing VAR>10NFA solar cells, with NFAsincluding Y6, IE<missing VAR>ICO, and IT<missing VAR>IC, as well as their halogenated derivatives, it issuggested that the molecular quadrupole moment of ca 75 Debye A balances thelosses in the open circuit voltage and gains in charge generation efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 75, 'Debye', 0]

ICO
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99924, 99926)
 By analyzing a series of PCE<missing VAR>10NFA solar cells, with NFAsincluding Y6, IE<missing VAR>ICO, and IT<missing VAR>IC, as well as their halogenated derivatives, it issuggested that the molecular quadrupole moment of ca 75 Debye A balances thelosses in the open circuit voltage and gains in charge generation efficiency.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 75, 'Debye', 0]

I
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99931, 99931)
 By analyzing a series of PCE<missing VAR>10NFA solar cells, with NFAsincluding Y6, IE<missing VAR>ICO, and IT<missing VAR>IC, as well as their halogenated derivatives, it issuggested that the molecular quadrupole moment of ca 75 Debye A balances thelosses in the open circuit voltage and gains in charge generation efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 75, 'Debye', 0]

IC
###Chemical design rules for non-fullerene acceptors in organic solar cells|A. Markina,K. -H. Lin,W. Liu,C. Poelking,Y. Firdaus,D. R. Villalva,J. I. Khan,S. H. K. Paleti,G. T. Harrison,J. Gorenflot,W. Zhang,S. De Wolf,I. McCulloch,T. D. Anthopoulos,D. Baran,F. Laquai,D. Andrienko###
(99933, 99934)
 By analyzing a series of PCE<missing VAR>10NFA solar cells, with NFAsincluding Y6, IE<missing VAR>ICO, and IT<missing VAR>IC, as well as their halogenated derivatives, it issuggested that the molecular quadrupole moment of ca 75 Debye A balances thelosses in the open circuit voltage and gains in charge generation efficiency.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 75, 'Debye', 0]

Pb
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100032, 100032)
Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 10, 'mol', 6],[365.0, 18.5, '%', 7],[373.0, 23.1, '%', 7]

Sn
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100034, 100034)
Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 10, 'mol', 6],[363.0, 18.5, '%', 7],[371.0, 23.1, '%', 7]

(SnF2)
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100059, 100063)
 Tin fluoride (SnF2) is an indispensable additive for high-efficiency Pb-Snperovskite solar cells (PSCs).
Featurization successful!
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 10, 'mol', 5],[334.0, 18.5, '%', 6],[342.0, 23.1, '%', 6]

Pb
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100079, 100079)
 Tin fluoride (SnF2) is an indispensable additive for high-efficiency Pb-Snperovskite solar cells (PSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 10, 'mol', 5],[318.0, 18.5, '%', 6],[326.0, 23.1, '%', 6]

Sn
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100081, 100081)
 Tin fluoride (SnF2) is an indispensable additive for high-efficiency Pb-Snperovskite solar cells (PSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 10, 'mol', 5],[316.0, 18.5, '%', 6],[324.0, 23.1, '%', 6]

(PSCs)
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100090, 100094)
 Tin fluoride (SnF2) is an indispensable additive for high-efficiency Pb-Snperovskite solar cells (PSCs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 10, 'mol', 5],[303.0, 18.5, '%', 6],[311.0, 23.1, '%', 6]

SnF2
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100108, 100110)
 However, the spatial distribution of SnF2 in theperovskite absorber is seldom investigated while essential for a comprehensiveunderstanding of the exact role of the SnF2 additive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 10, 'mol', 4],[287.0, 18.5, '%', 5],[295.0, 23.1, '%', 5]

SnF2
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100152, 100154)
 However, the spatial distribution of SnF2 in theperovskite absorber is seldom investigated while essential for a comprehensiveunderstanding of the exact role of the SnF2 additive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 10, 'mol', 4],[243.0, 18.5, '%', 5],[251.0, 23.1, '%', 5]

SnF2
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100175, 100177)
 Herein, we revealed thespatial distribution of SnF2 additive and made structure-optoelectronicproperties-flexible photovoltaic performance correlation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 10, 'mol', 3],[220.0, 18.5, '%', 4],[228.0, 23.1, '%', 4]

SnF2
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100214, 100216)
 We observed thechemical transformation of SnF2 to a fluorinated oxy-phase on the Pb-Snperovskite film surface, due to its rapid oxidation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 10, 'mol', 2],[181.0, 18.5, '%', 3],[189.0, 23.1, '%', 3]

Pb
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100232, 100232)
 We observed thechemical transformation of SnF2 to a fluorinated oxy-phase on the Pb-Snperovskite film surface, due to its rapid oxidation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 10, 'mol', 2],[165.0, 18.5, '%', 3],[173.0, 23.1, '%', 3]

Sn
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100234, 100234)
 We observed thechemical transformation of SnF2 to a fluorinated oxy-phase on the Pb-Snperovskite film surface, due to its rapid oxidation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 10, 'mol', 2],[163.0, 18.5, '%', 3],[171.0, 23.1, '%', 3]

In
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100255, 100255)
 In addition, at the buriedperovskite interface, we detected and visualized the accumulation of F- ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 10, 'mol', 1],[142.0, 18.5, '%', 2],[150.0, 23.1, '%', 2]

F
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100286, 100286)
 In addition, at the buriedperovskite interface, we detected and visualized the accumulation of F- ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 10, 'mol', 1],[111.0, 18.5, '%', 2],[119.0, 23.1, '%', 2]

Pb
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100309, 100309)
We found that the photoluminescence quantum yield of Pb-Sn perovskite reachedthe highest value with 10 mol% SnF2 in the precursor solution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 10, 'mol', 0],[88.0, 18.5, '%', 1],[96.0, 23.1, '%', 1]

Sn
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100311, 100311)
We found that the photoluminescence quantum yield of Pb-Sn perovskite reachedthe highest value with 10 mol% SnF2 in the precursor solution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 10, 'mol', 0],[86.0, 18.5, '%', 1],[94.0, 23.1, '%', 1]

SnF2
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100328, 100330)
We found that the photoluminescence quantum yield of Pb-Sn perovskite reachedthe highest value with 10 mol% SnF2 in the precursor solution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 10, 'mol', 0],[67.0, 18.5, '%', 1],[75.0, 23.1, '%', 1]

Pb
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100367, 100367)
 When integratingthe optimized absorber in flexible devices, we obtained the flexible Pb-Snperovskite narrow bandgap (1.24 e<missing VAR>V) solar cells with an efficiency of 18.5% anddemonstrated 23.1%-efficient flexible 4-terminal all-perovskite tandem cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 10, 'mol', 1],[30.0, 18.5, '%', 0],[38.0, 23.1, '%', 0]

Sn
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100369, 100369)
 When integratingthe optimized absorber in flexible devices, we obtained the flexible Pb-Snperovskite narrow bandgap (1.24 e<missing VAR>V) solar cells with an efficiency of 18.5% anddemonstrated 23.1%-efficient flexible 4-terminal all-perovskite tandem cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 10, 'mol', 1],[28.0, 18.5, '%', 0],[36.0, 23.1, '%', 0]

V
###Revealing the role of tin fluoride additive in narrow bandgap Pb-Sn perovskites for highly efficient flexible all-perovskite tandem cells|Johnpaul K. Pious,Yannick Zwirner,Huagui Lai,Selina Olthof,Quentin Jeangros,Evgeniia Gilshtein,Radha K. Kothandaraman,Kerem Artuk,Philipp Wechsler,Cong Chen,Christian M. Wolff,Dewei Zhao,Ayodhya. N. Tiwari,Fan Fu###
(100382, 100382)
 When integratingthe optimized absorber in flexible devices, we obtained the flexible Pb-Snperovskite narrow bandgap (1.24 e<missing VAR>V) solar cells with an efficiency of 18.5% anddemonstrated 23.1%-efficient flexible 4-terminal all-perovskite tandem cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 10, 'mol', 1],[15.0, 18.5, '%', 0],[23.0, 23.1, '%', 0]

TiO2
###Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells|Tian-Li Feng,Guang-Wei Deng,Yi Xia,Feng-Cheng Wu,Ping Cui,Hai-Ping Lan,Zhen-Yu Zhang###
(100451, 100453)
Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 57, '%', 3],[198.0, 53, '%', 3]

TiO2
###Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells|Tian-Li Feng,Guang-Wei Deng,Yi Xia,Feng-Cheng Wu,Ping Cui,Hai-Ping Lan,Zhen-Yu Zhang###
(100515, 100517)
 The novel concept of non-compensated n-p codoping has made it possible tocreate tunable intermediate bands in the intrinsic band gap of TiO2, making thecodoped TiO2 a promising material for developing intermediate band solar cells(IBSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 57, '%', 2],[134.0, 53, '%', 2]

TiO2
###Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells|Tian-Li Feng,Guang-Wei Deng,Yi Xia,Feng-Cheng Wu,Ping Cui,Hai-Ping Lan,Zhen-Yu Zhang###
(100527, 100529)
 The novel concept of non-compensated n-p codoping has made it possible tocreate tunable intermediate bands in the intrinsic band gap of TiO2, making thecodoped TiO2 a promising material for developing intermediate band solar cells(IBSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 57, '%', 2],[122.0, 53, '%', 2]

(IBSCs)
###Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells|Tian-Li Feng,Guang-Wei Deng,Yi Xia,Feng-Cheng Wu,Ping Cui,Hai-Ping Lan,Zhen-Yu Zhang###
(100550, 100555)
 The novel concept of non-compensated n-p codoping has made it possible tocreate tunable intermediate bands in the intrinsic band gap of TiO2, making thecodoped TiO2 a promising material for developing intermediate band solar cells(IBSCs).
Featurization successful!
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 57, '%', 2],[96.0, 53, '%', 2]

IBSCs
###Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells|Tian-Li Feng,Guang-Wei Deng,Yi Xia,Feng-Cheng Wu,Ping Cui,Hai-Ping Lan,Zhen-Yu Zhang###
(100574, 100577)
 Here we investigate the quantum efficiency of such IBSCs within twoscenarios - with and without current extracted from the extended intermediateband.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 57, '%', 1],[74.0, 53, '%', 1]

TiO2
###Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells|Tian-Li Feng,Guang-Wei Deng,Yi Xia,Feng-Cheng Wu,Ping Cui,Hai-Ping Lan,Zhen-Yu Zhang###
(100725, 100727)
 We alsoobtain various key quantities of the circuits, a useful step in realisticdevelopment of TiO2 based solar cells invoking device integration.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 57, '%', 1],[74.0, 53, '%', 1]

I
###Equivalent Circuit Description of Non-compensated n-p Codoped TiO2 as Intermediate Band Solar Cells|Tian-Li Feng,Guang-Wei Deng,Yi Xia,Feng-Cheng Wu,Ping Cui,Hai-Ping Lan,Zhen-Yu Zhang###
(100835, 100835)
 Theseequivalent circuit results are also compared with the efficiencies obtaineddirectly from consideration of electron transition between the energy bands,and both approaches reveal the intriguing existence of double peaks in themaximum quantum efficiency as a function of the relative location of IBs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 57, '%', 2],[184.0, 53, '%', 2]

AlInN
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(100853, 100855)
Design of n<missing VAR>-AlInN on p<missing VAR>-silicon heterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.7, 'eV', 1],[76.0, 6.2, 'eV', 1],[338.0, 18, '%', 5],[372.0, 23.6, '%', 5],[447.0, 500, 'nm', 6]

(AlInN)
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(100876, 100880)
 Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaicdevices thanks to their wide direct bandgap energy that covers the solarspectrum from 0.7 eV (InN) to 6.2 eV (AlN), and their superior resistance tohigh temperatures and high-energy particles.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.7, 'eV', 0],[51.0, 6.2, 'eV', 0],[313.0, 18, '%', 4],[347.0, 23.6, '%', 4],[422.0, 500, 'nm', 5]

(InN)
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(100925, 100928)
 Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaicdevices thanks to their wide direct bandgap energy that covers the solarspectrum from 0.7 eV (InN) to 6.2 eV (AlN), and their superior resistance tohigh temperatures and high-energy particles.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 0.7, 'eV', 0],[3.0, 6.2, 'eV', 0],[265.0, 18, '%', 4],[299.0, 23.6, '%', 4],[374.0, 500, 'nm', 5]

(AlN)
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(100933, 100936)
 Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaicdevices thanks to their wide direct bandgap energy that covers the solarspectrum from 0.7 eV (InN) to 6.2 eV (AlN), and their superior resistance tohigh temperatures and high-energy particles.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.7, 'eV', 0],[2.0, 6.2, 'eV', 0],[257.0, 18, '%', 4],[291.0, 23.6, '%', 4],[366.0, 500, 'nm', 5]

In
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(100963, 100963)
 In this paper, we report thedesign of AlInN on silicon heterojunctions, with the aim to explore theirpotential for solar cell devices through the analysis and optimization of theproperties of the AlInN on Si heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.7, 'eV', 1],[32.0, 6.2, 'eV', 1],[230.0, 18, '%', 3],[264.0, 23.6, '%', 3],[339.0, 500, 'nm', 4]

AlInN
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(100981, 100983)
 In this paper, we report thedesign of AlInN on silicon heterojunctions, with the aim to explore theirpotential for solar cell devices through the analysis and optimization of theproperties of the AlInN on Si heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.7, 'eV', 1],[50.0, 6.2, 'eV', 1],[210.0, 18, '%', 3],[244.0, 23.6, '%', 3],[319.0, 500, 'nm', 4]

AlInN
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101036, 101038)
 In this paper, we report thedesign of AlInN on silicon heterojunctions, with the aim to explore theirpotential for solar cell devices through the analysis and optimization of theproperties of the AlInN on Si heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.7, 'eV', 1],[105.0, 6.2, 'eV', 1],[155.0, 18, '%', 3],[189.0, 23.6, '%', 3],[264.0, 500, 'nm', 4]

Si
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101042, 101042)
 In this paper, we report thedesign of AlInN on silicon heterojunctions, with the aim to explore theirpotential for solar cell devices through the analysis and optimization of theproperties of the AlInN on Si heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0.7, 'eV', 1],[111.0, 6.2, 'eV', 1],[151.0, 18, '%', 3],[185.0, 23.6, '%', 3],[260.0, 500, 'nm', 4]

In
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101047, 101047)
 In particular, we study theinfluence of the AlInN bandgap energy, AlInN thickness and carrierconcentration, silicon surface recombination, interface defects and Si waferquality on the photovoltaic properties (conversion efficiency and externalquantum efficiency) of the AlInN on Si heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 0.7, 'eV', 2],[116.0, 6.2, 'eV', 2],[146.0, 18, '%', 2],[180.0, 23.6, '%', 2],[255.0, 500, 'nm', 3]

AlInN
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101065, 101067)
 In particular, we study theinfluence of the AlInN bandgap energy, AlInN thickness and carrierconcentration, silicon surface recombination, interface defects and Si waferquality on the photovoltaic properties (conversion efficiency and externalquantum efficiency) of the AlInN on Si heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.7, 'eV', 2],[134.0, 6.2, 'eV', 2],[126.0, 18, '%', 2],[160.0, 23.6, '%', 2],[235.0, 500, 'nm', 3]

AlInN
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101074, 101076)
 In particular, we study theinfluence of the AlInN bandgap energy, AlInN thickness and carrierconcentration, silicon surface recombination, interface defects and Si waferquality on the photovoltaic properties (conversion efficiency and externalquantum efficiency) of the AlInN on Si heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.7, 'eV', 2],[143.0, 6.2, 'eV', 2],[117.0, 18, '%', 2],[151.0, 23.6, '%', 2],[226.0, 500, 'nm', 3]

Si
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101101, 101101)
 In particular, we study theinfluence of the AlInN bandgap energy, AlInN thickness and carrierconcentration, silicon surface recombination, interface defects and Si waferquality on the photovoltaic properties (conversion efficiency and externalquantum efficiency) of the AlInN on Si heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 0.7, 'eV', 2],[170.0, 6.2, 'eV', 2],[92.0, 18, '%', 2],[126.0, 23.6, '%', 2],[201.0, 500, 'nm', 3]

AlInN
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101135, 101137)
 In particular, we study theinfluence of the AlInN bandgap energy, AlInN thickness and carrierconcentration, silicon surface recombination, interface defects and Si waferquality on the photovoltaic properties (conversion efficiency and externalquantum efficiency) of the AlInN on Si heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 0.7, 'eV', 2],[204.0, 6.2, 'eV', 2],[56.0, 18, '%', 2],[90.0, 23.6, '%', 2],[165.0, 500, 'nm', 3]

Si
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101141, 101141)
 In particular, we study theinfluence of the AlInN bandgap energy, AlInN thickness and carrierconcentration, silicon surface recombination, interface defects and Si waferquality on the photovoltaic properties (conversion efficiency and externalquantum efficiency) of the AlInN on Si heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 0.7, 'eV', 2],[210.0, 6.2, 'eV', 2],[52.0, 18, '%', 2],[86.0, 23.6, '%', 2],[161.0, 500, 'nm', 3]

AlInN
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101172, 101174)
 Optimized AlInN on Siheterostructure shows a conversion efficiency of 18% under 1-sun AM1.5Gillumination for low-quality Si wafers, which increases to 23.6% forhigh-quality Si wafers and incorporating a properly designed anti-reflectivelayer.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 0.7, 'eV', 4],[241.0, 6.2, 'eV', 4],[19.0, 18, '%', 0],[53.0, 23.6, '%', 0],[128.0, 500, 'nm', 1]

Si
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101178, 101178)
 Optimized AlInN on Siheterostructure shows a conversion efficiency of 18% under 1-sun AM1.5Gillumination for low-quality Si wafers, which increases to 23.6% forhigh-quality Si wafers and incorporating a properly designed anti-reflectivelayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 0.7, 'eV', 4],[247.0, 6.2, 'eV', 4],[15.0, 18, '%', 0],[49.0, 23.6, '%', 0],[124.0, 500, 'nm', 1]

Si
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101216, 101216)
 Optimized AlInN on Siheterostructure shows a conversion efficiency of 18% under 1-sun AM1.5Gillumination for low-quality Si wafers, which increases to 23.6% forhigh-quality Si wafers and incorporating a properly designed anti-reflectivelayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 0.7, 'eV', 4],[285.0, 6.2, 'eV', 4],[23.0, 18, '%', 0],[11.0, 23.6, '%', 0],[86.0, 500, 'nm', 1]

Si
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101237, 101237)
 Optimized AlInN on Siheterostructure shows a conversion efficiency of 18% under 1-sun AM1.5Gillumination for low-quality Si wafers, which increases to 23.6% forhigh-quality Si wafers and incorporating a properly designed anti-reflectivelayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 0.7, 'eV', 4],[306.0, 6.2, 'eV', 4],[44.0, 18, '%', 0],[10.0, 23.6, '%', 0],[65.0, 500, 'nm', 1]

In
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101259, 101259)
 In comparison with standard Si solar cells without AlInN, the externalquantum efficient of the devices increases for wavelengths below 500 nm, makingthem appealing for space applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 0.7, 'eV', 5],[328.0, 6.2, 'eV', 5],[66.0, 18, '%', 1],[32.0, 23.6, '%', 1],[43.0, 500, 'nm', 0]

Si
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101267, 101267)
 In comparison with standard Si solar cells without AlInN, the externalquantum efficient of the devices increases for wavelengths below 500 nm, makingthem appealing for space applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 0.7, 'eV', 5],[336.0, 6.2, 'eV', 5],[74.0, 18, '%', 1],[40.0, 23.6, '%', 1],[35.0, 500, 'nm', 0]

AlInN
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101275, 101277)
 In comparison with standard Si solar cells without AlInN, the externalquantum efficient of the devices increases for wavelengths below 500 nm, makingthem appealing for space applications.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 0.7, 'eV', 5],[344.0, 6.2, 'eV', 5],[82.0, 18, '%', 1],[48.0, 23.6, '%', 1],[25.0, 500, 'nm', 0]

AlInN
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101329, 101331)
 These results lead to the AlInN on Siheterojunction a promising future as a novel technology for solar cell devices.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 0.7, 'eV', 6],[398.0, 6.2, 'eV', 6],[136.0, 18, '%', 2],[102.0, 23.6, '%', 2],[27.0, 500, 'nm', 1]

Si
###Design of n-AlInN on p-silicon heterojunction solar cells|R. Blasco,F. B. Naranjo,S. Valdueza-Felip###
(101335, 101335)
 These results lead to the AlInN on Siheterojunction a promising future as a novel technology for solar cell devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 0.7, 'eV', 6],[404.0, 6.2, 'eV', 6],[142.0, 18, '%', 2],[108.0, 23.6, '%', 2],[33.0, 500, 'nm', 1]

In
###Loss Mechanism Analyses of Perovskite Solar Cells with an Equivalent Circuit Model|Ting Xu,Zi-Shuai Wang,Xuan-Hua Li,Wei E. I. Sha###
(101841, 101841)
 In thiswork, based on semiconductor physics, the expressions of bulk and surfacerecombination currents are analytically derived.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 2, '%', 4]

F
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102506, 102506)
Herein, we introduce the spontaneous radiative cooling effect into theperovskite solar cell and amplified this effect via functional structure designof a full-carbon electrode (F-CE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 19, '%', 1],[25.0, 23, '%', 1],[245.0, 2000, 'hours', 4]

C
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102508, 102508)
Herein, we introduce the spontaneous radiative cooling effect into theperovskite solar cell and amplified this effect via functional structure designof a full-carbon electrode (F-CE).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 19, '%', 1],[23.0, 23, '%', 1],[243.0, 2000, 'hours', 4]

F
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102542, 102542)
 Firstly, with interface engineering, >19%and >23% power conversion efficiencies of F-CE<missing VAR> based inorganic CsPbI3 andhybrid perovskite solar cells have been achieved, respectively, both of whichare the highest reported efficiencies based on carbon electrode and arecomparative to the results for metal electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 19, '%', 0],[11.0, 23, '%', 0],[209.0, 2000, 'hours', 3]

C
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102544, 102544)
 Firstly, with interface engineering, >19%and >23% power conversion efficiencies of F-CE<missing VAR> based inorganic CsPbI3 andhybrid perovskite solar cells have been achieved, respectively, both of whichare the highest reported efficiencies based on carbon electrode and arecomparative to the results for metal electrodes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 19, '%', 0],[13.0, 23, '%', 0],[207.0, 2000, 'hours', 3]

CsPbI3
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102551, 102554)
 Firstly, with interface engineering, >19%and >23% power conversion efficiencies of F-CE<missing VAR> based inorganic CsPbI3 andhybrid perovskite solar cells have been achieved, respectively, both of whichare the highest reported efficiencies based on carbon electrode and arecomparative to the results for metal electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 19, '%', 0],[20.0, 23, '%', 0],[197.0, 2000, 'hours', 3]

F
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102635, 102635)
 Highly efficient thermalradiation of this F-CE<missing VAR> can reduce the temperature of the operating cell byabout 10 degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 19, '%', 1],[104.0, 23, '%', 1],[116.0, 2000, 'hours', 2]

C
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102637, 102637)
 Highly efficient thermalradiation of this F-CE<missing VAR> can reduce the temperature of the operating cell byabout 10 degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 19, '%', 1],[106.0, 23, '%', 1],[114.0, 2000, 'hours', 2]

C
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102664, 102664)
 Highly efficient thermalradiation of this F-CE<missing VAR> can reduce the temperature of the operating cell byabout 10 degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 19, '%', 1],[133.0, 23, '%', 1],[87.0, 2000, 'hours', 2]

CsPbI3
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102732, 102735)
 Especially, the CsPbI3 PSCsexhibited no efficiency degradation after 2000 hours of continuous operationaltracking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 19, '%', 3],[201.0, 23, '%', 3],[16.0, 2000, 'hours', 0]

PSCs
###Spontaneous Radiative Cooling to Enhance the Operational Stability of Perovskite Solar Cells via a Black-body-like Full Carbon Electrode|Bingcheng Yu,Jiangjian Shi,Yiming Li,Shan Tan,Yuqi Cui,Fanqi Meng,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng###
(102737, 102739)
 Especially, the CsPbI3 PSCsexhibited no efficiency degradation after 2000 hours of continuous operationaltracking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 19, '%', 3],[206.0, 23, '%', 3],[12.0, 2000, 'hours', 0]

InGaN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(102968, 102970)
Simulation study of a new InGaN p<missing VAR>-layer free Schottky based solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 17.8, '%', 7],[388.0, 19.0, '%', 7],[505.0, 18.2, '%', 8],[510.0, 19.8, '%', 8]

(InGaN)
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103019, 103023)
 On the road towards next generation high efficiency solar cells, the ternaryIndium Gallium Nitride (InGaN) alloy is a good passenger since it allows tocover the whole solar spectrum through the change in its Indium composition.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 17.8, '%', 6],[335.0, 19.0, '%', 6],[452.0, 18.2, '%', 7],[457.0, 19.8, '%', 7]

InGaN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103086, 103088)
The choice of the main structure of the InGaN solar cell is however crucial.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 17.8, '%', 5],[270.0, 19.0, '%', 5],[387.0, 18.2, '%', 6],[392.0, 19.8, '%', 6]

InGaN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103189, 103191)
Unfortunately, one of the main drawbacks of InGaN is linked to its p<missing VAR>-typedoping, which is very difficult to realize since it involves complextechnological processes that are difficult to master and that highly impact thelayer quality.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 17.8, '%', 2],[167.0, 19.0, '%', 2],[284.0, 18.2, '%', 3],[289.0, 19.8, '%', 3]

In
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103260, 103260)
 In this paper, the InGaN p-n junction (PN) and p<missing VAR>-in junction(PIN) based solar cells are numerically studied using the most realisticmodels, and optimized through mathematically rigorous multivariate optimizationapproaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 17.8, '%', 1],[98.0, 19.0, '%', 1],[215.0, 18.2, '%', 2],[220.0, 19.8, '%', 2]

InGaN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103269, 103271)
 In this paper, the InGaN p-n junction (PN) and p<missing VAR>-in junction(PIN) based solar cells are numerically studied using the most realisticmodels, and optimized through mathematically rigorous multivariate optimizationapproaches.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 17.8, '%', 1],[87.0, 19.0, '%', 1],[204.0, 18.2, '%', 2],[209.0, 19.8, '%', 2]

(PN)
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103279, 103282)
 In this paper, the InGaN p-n junction (PN) and p<missing VAR>-in junction(PIN) based solar cells are numerically studied using the most realisticmodels, and optimized through mathematically rigorous multivariate optimizationapproaches.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 17.8, '%', 1],[76.0, 19.0, '%', 1],[193.0, 18.2, '%', 2],[198.0, 19.8, '%', 2]

(PIN)
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103293, 103297)
 In this paper, the InGaN p-n junction (PN) and p<missing VAR>-in junction(PIN) based solar cells are numerically studied using the most realisticmodels, and optimized through mathematically rigorous multivariate optimizationapproaches.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 17.8, '%', 1],[61.0, 19.0, '%', 1],[178.0, 18.2, '%', 2],[183.0, 19.8, '%', 2]

PN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103366, 103367)
 This analysis evidences optimal efficiencies of 17.8% and 19.0% forthe PN and PIN structures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 17.8, '%', 0],[8.0, 19.0, '%', 0],[108.0, 18.2, '%', 1],[113.0, 19.8, '%', 1]

PIN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103371, 103373)
 This analysis evidences optimal efficiencies of 17.8% and 19.0% forthe PN and PIN structures.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 17.8, '%', 0],[13.0, 19.0, '%', 0],[102.0, 18.2, '%', 1],[107.0, 19.8, '%', 1]

InGaN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103400, 103402)
 It also leads to propose, analyze and optimizeplayer free InGaN Schottky-Based Solar Cells (SBSC) the Schottky structure anda new M<missing VAR>IN structure for which the optimal efficiencies are shown to be a littlehigher than for the conventional structures respectively 18.2% and 19.8%.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 17.8, '%', 1],[42.0, 19.0, '%', 1],[73.0, 18.2, '%', 0],[78.0, 19.8, '%', 0]

(SBSC)
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103412, 103417)
 It also leads to propose, analyze and optimizeplayer free InGaN Schottky-Based Solar Cells (SBSC) the Schottky structure anda new M<missing VAR>IN structure for which the optimal efficiencies are shown to be a littlehigher than for the conventional structures respectively 18.2% and 19.8%.
Featurization successful!
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 17.8, '%', 1],[54.0, 19.0, '%', 1],[58.0, 18.2, '%', 0],[63.0, 19.8, '%', 0]

IN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103433, 103434)
 It also leads to propose, analyze and optimizeplayer free InGaN Schottky-Based Solar Cells (SBSC) the Schottky structure anda new M<missing VAR>IN structure for which the optimal efficiencies are shown to be a littlehigher than for the conventional structures respectively 18.2% and 19.8%.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 17.8, '%', 1],[75.0, 19.0, '%', 1],[41.0, 18.2, '%', 0],[46.0, 19.8, '%', 0]

IN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103526, 103527)
 The new M<missing VAR>IN structure is shown to exhibit the widest toleranceson the layers thicknesses and dopings.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 17.8, '%', 3],[168.0, 19.0, '%', 3],[51.0, 18.2, '%', 2],[46.0, 19.8, '%', 2]

In
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103559, 103559)
 In addition to its being player free,this is another advantage of the M<missing VAR>IN structure since it implies its betterreliability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 17.8, '%', 4],[201.0, 19.0, '%', 4],[84.0, 18.2, '%', 3],[79.0, 19.8, '%', 3]

IN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103588, 103589)
 In addition to its being player free,this is another advantage of the M<missing VAR>IN structure since it implies its betterreliability.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 17.8, '%', 4],[230.0, 19.0, '%', 4],[113.0, 18.2, '%', 3],[108.0, 19.8, '%', 3]

InGaN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103614, 103616)
 Therefore, these new InGaN SBSC are shown to be alternatives tothe conventional structures that allow removing the p<missing VAR>-type doping of InGaNwhile giving photovoltaic (PV) performances at least comparable to the standardmultilayers PN or PIN structures.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 17.8, '%', 5],[256.0, 19.0, '%', 5],[139.0, 18.2, '%', 4],[134.0, 19.8, '%', 4]

SBSC
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103618, 103621)
 Therefore, these new InGaN SBSC are shown to be alternatives tothe conventional structures that allow removing the p<missing VAR>-type doping of InGaNwhile giving photovoltaic (PV) performances at least comparable to the standardmultilayers PN or PIN structures.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 17.8, '%', 5],[260.0, 19.0, '%', 5],[143.0, 18.2, '%', 4],[138.0, 19.8, '%', 4]

InGaN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103658, 103660)
 Therefore, these new InGaN SBSC are shown to be alternatives tothe conventional structures that allow removing the p<missing VAR>-type doping of InGaNwhile giving photovoltaic (PV) performances at least comparable to the standardmultilayers PN or PIN structures.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 17.8, '%', 5],[300.0, 19.0, '%', 5],[183.0, 18.2, '%', 4],[178.0, 19.8, '%', 4]

(PV)
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103669, 103672)
 Therefore, these new InGaN SBSC are shown to be alternatives tothe conventional structures that allow removing the p<missing VAR>-type doping of InGaNwhile giving photovoltaic (PV) performances at least comparable to the standardmultilayers PN or PIN structures.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 17.8, '%', 5],[311.0, 19.0, '%', 5],[194.0, 18.2, '%', 4],[189.0, 19.8, '%', 4]

PN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103691, 103692)
 Therefore, these new InGaN SBSC are shown to be alternatives tothe conventional structures that allow removing the p<missing VAR>-type doping of InGaNwhile giving photovoltaic (PV) performances at least comparable to the standardmultilayers PN or PIN structures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 17.8, '%', 5],[333.0, 19.0, '%', 5],[216.0, 18.2, '%', 4],[211.0, 19.8, '%', 4]

PIN
###Simulation study of a new InGaN p-layer free Schottky based solar cell|Abdoulwahab Adaine,Sidi Ould Saad Hamady,Nicolas Fressengeas###
(103696, 103698)
 Therefore, these new InGaN SBSC are shown to be alternatives tothe conventional structures that allow removing the p<missing VAR>-type doping of InGaNwhile giving photovoltaic (PV) performances at least comparable to the standardmultilayers PN or PIN structures.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 17.8, '%', 5],[338.0, 19.0, '%', 5],[221.0, 18.2, '%', 4],[216.0, 19.8, '%', 4]

ZnO
###Measurement of light diffusion in ZnO nanowire forests|Marijn A. M. Versteegh,Ruben E. C. van der Wel,Jaap I. Dijkhuis###
(103915, 103916)
Measurement of light diffusion in ZnO nanowire forests.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Measurement of light diffusion in ZnO nanowire forests|Marijn A. M. Versteegh,Ruben E. C. van der Wel,Jaap I. Dijkhuis###
(104023, 104024)
 Our measurements ondisordered ZnO nanowire arrays, nanowire forests, indicate that the photonmean free path and the dwell time of light can be well predicted from SEMimages.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Measurement of light diffusion in ZnO nanowire forests|Marijn A. M. Versteegh,Ruben E. C. van der Wel,Jaap I. Dijkhuis###
(104073, 104073)
 Our measurements ondisordered ZnO nanowire arrays, nanowire forests, indicate that the photonmean free path and the dwell time of light can be well predicted from SEMimages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuAlO2/Cu
###Inverted Perovskite Photovoltaics using Flame Spray Pyrolysis Solution based CuAlO2/Cu-O Hole Selective Contact|Achilleas Savva,Ioannis T. Papadas,Dimitris Tsikritzis,Apostolos Ioakeimidis,Fedros Galatopoulos,Konstantinos Kapnisis,Roland Fuhrer,Benjamin Hartmeier,Marek F. Oszajca,Norman A. Luechinger,Stella Kennou,Gerasimos Armatas,Stelios A. Choulis###
(104107, 104112)
Inverted Perovskite Photovoltaics using Flame Spray Pyrolysis Solution based CuAlO2/Cu-O Hole Selective Contact.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Inverted Perovskite Photovoltaics using Flame Spray Pyrolysis Solution based CuAlO2/Cu-O Hole Selective Contact|Achilleas Savva,Ioannis T. Papadas,Dimitris Tsikritzis,Apostolos Ioakeimidis,Fedros Galatopoulos,Konstantinos Kapnisis,Roland Fuhrer,Benjamin Hartmeier,Marek F. Oszajca,Norman A. Luechinger,Stella Kennou,Gerasimos Armatas,Stelios A. Choulis###
(104114, 104114)
Inverted Perovskite Photovoltaics using Flame Spray Pyrolysis Solution based CuAlO2/Cu-O Hole Selective Contact.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsF
###Nitrobenzene as Additive to Improve Reproducibility and Degradation Resistance of Highly Efficient Methylammonium-Free Inverted Perovskite Solar Cells|Apostolos Ioakeimidis,Stelios. A. Choulis###
(104416, 104417)
 We show that the addition of 1 % (v/v) nitrobenzene within the perovskiteformulation can be used as a method to improve the power conversion efficiencyand reliability performance of methylammonium-free (CsFA) inverted perovskitesolar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Nitrobenzene as Additive to Improve Reproducibility and Degradation Resistance of Highly Efficient Methylammonium-Free Inverted Perovskite Solar Cells|Apostolos Ioakeimidis,Stelios. A. Choulis###
(104439, 104440)
 Addition of nitrobenzene increased PCE<missing VAR> due to defect passivationand provides smoother films resulting in PVSCs with narrower PCE<missing VAR> distribution.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PVSCs
###Nitrobenzene as Additive to Improve Reproducibility and Degradation Resistance of Highly Efficient Methylammonium-Free Inverted Perovskite Solar Cells|Apostolos Ioakeimidis,Stelios. A. Choulis###
(104464, 104467)
 Addition of nitrobenzene increased PCE<missing VAR> due to defect passivationand provides smoother films resulting in PVSCs with narrower PCE<missing VAR> distribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Nitrobenzene as Additive to Improve Reproducibility and Degradation Resistance of Highly Efficient Methylammonium-Free Inverted Perovskite Solar Cells|Apostolos Ioakeimidis,Stelios. A. Choulis###
(104473, 104474)
 Addition of nitrobenzene increased PCE<missing VAR> due to defect passivationand provides smoother films resulting in PVSCs with narrower PCE<missing VAR> distribution.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PVSCs
###Nitrobenzene as Additive to Improve Reproducibility and Degradation Resistance of Highly Efficient Methylammonium-Free Inverted Perovskite Solar Cells|Apostolos Ioakeimidis,Stelios. A. Choulis###
(104496, 104499)
Moreover, the nitrobenzene additive methylammonium-free hybrid PVSCs exhibitprolonged lifetime compare to additive free PVSCs due to enhanced air andmoisture degradation resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PVSCs
###Nitrobenzene as Additive to Improve Reproducibility and Degradation Resistance of Highly Efficient Methylammonium-Free Inverted Perovskite Solar Cells|Apostolos Ioakeimidis,Stelios. A. Choulis###
(104516, 104519)
Moreover, the nitrobenzene additive methylammonium-free hybrid PVSCs exhibitprolonged lifetime compare to additive free PVSCs due to enhanced air andmoisture degradation resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaN/GaN
###Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells|M. Auf der Maur,G. Moses,J. M. Gordon,X. Huang,Y. Zhao,E. A. Katz###
(104567, 104572)
Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[62.0, 725, 'K', 1]

InGaN/GaN
###Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells|M. Auf der Maur,G. Moses,J. M. Gordon,X. Huang,Y. Zhao,E. A. Katz###
(104614, 104619)
 We have analyzed the temperature and intensity dependence of the open-circuitvoltage of InGaN/GaN multi-quantum well solar cells up to 725 K and more than1000 suns.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[15.0, 725, 'K', 0]

BC
###Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells|M. Auf der Maur,G. Moses,J. M. Gordon,X. Huang,Y. Zhao,E. A. Katz###
(104659, 104660)
 We show that the simple ABC model routinely used to analyze themeasured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce thetemperature and intensity dependence of the measured open-circuit voltage if atemperature-dependent Shockley-Read-Hall lifetime is used and device heating istaken into account.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 725, 'K', 1]

InGaN/GaN
###Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells|M. Auf der Maur,G. Moses,J. M. Gordon,X. Huang,Y. Zhao,E. A. Katz###
(104685, 104690)
 We show that the simple ABC model routinely used to analyze themeasured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce thetemperature and intensity dependence of the measured open-circuit voltage if atemperature-dependent Shockley-Read-Hall lifetime is used and device heating istaken into account.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[51.0, 725, 'K', 1]

Ds
###Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells|M. Auf der Maur,G. Moses,J. M. Gordon,X. Huang,Y. Zhao,E. A. Katz###
(104694, 104694)
 We show that the simple ABC model routinely used to analyze themeasured quantum efficiency data of InGaN/GaN LEDs can accurately reproduce thetemperature and intensity dependence of the measured open-circuit voltage if atemperature-dependent Shockley-Read-Hall lifetime is used and device heating istaken into account.
EXCEPTION 3: IndexError for Ds
[60.0, 725, 'K', 1]

In
###Intermediate Mirrors to Reach Theoretical Efficiency Limits of Multi-Bandgap Solar Cells|Vidya Ganapati,Chi-Sing Ho,Eli Yablonovitch###
(104983, 104983)
 In this work, we quantitativelyestablish the efficiency increase possible with the use of intermediateselective reflectors between cells in a tandem stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 6, '%', 1]

As
###Intermediate Mirrors to Reach Theoretical Efficiency Limits of Multi-Bandgap Solar Cells|Vidya Ganapati,Chi-Sing Ho,Eli Yablonovitch###
(105157, 105157)
 As the incoming sunlight is within theescape cone, it is transmitted on to the next cell, while most of theinternally trapped luminescence is reflected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 6, '%', 3]

C
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105276, 105276)
 We investigate physics based design of colloidal quantum dot (CQD) solarcells using self-consistent computational modeling.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, -3, ',', 2],[169.0, 37, '%', 3],[354.0, -3, ',', 6],[371.0, 20, '%', 6]

N
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105342, 105342)
 The significance of bandalignment engineering and optimized carrier mobility are quantitativelyexplored as a function of sub bandgap defect densities (Nt) in the bulk CQD.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, -3, ',', 1],[103.0, 37, '%', 2],[288.0, -3, ',', 5],[305.0, 20, '%', 5]

C
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105352, 105352)
 The significance of bandalignment engineering and optimized carrier mobility are quantitativelyexplored as a function of sub bandgap defect densities (Nt) in the bulk CQD.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, -3, ',', 1],[93.0, 37, '%', 2],[278.0, -3, ',', 5],[295.0, 20, '%', 5]

N
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105360, 105360)
For Nt<missing VAR> leq 1015 cm-3, band alignment engineering near the interfaceof CQD and the metal contact could significantly improve open circuit voltageby suppressing the forward bias dark current.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, -3, ',', 0],[85.0, 37, '%', 1],[270.0, -3, ',', 4],[287.0, 20, '%', 4]

C
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105388, 105388)
For Nt<missing VAR> leq 1015 cm-3, band alignment engineering near the interfaceof CQD and the metal contact could significantly improve open circuit voltageby suppressing the forward bias dark current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, -3, ',', 0],[57.0, 37, '%', 1],[242.0, -3, ',', 4],[259.0, 20, '%', 4]

C
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105462, 105462)
 This effect could enhance cellefficiency up to 37% for thinner (< 1 mu m) CQD layers.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, -3, ',', 1],[17.0, 37, '%', 0],[168.0, -3, ',', 3],[185.0, 20, '%', 3]

C
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105484, 105484)
 For thicker (> 1mu m) CQD layer, the effect of band engineering is diminished as the forwardbias dark current becomes diffusion-limited and less dependent on theinterfacial band offsets.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, -3, ',', 2],[39.0, 37, '%', 1],[146.0, -3, ',', 2],[163.0, 20, '%', 2]

C
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105552, 105552)
 An optimal carrier mobility in CQD lies in the range 10-2 cm2/Vs - 100 cm2/Vs and shows variation as a function of CQD layerthickness and the interfacial band offset.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, -3, ',', 3],[107.0, 37, '%', 2],[78.0, -3, ',', 1],[95.0, 20, '%', 1]

C
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105599, 105599)
 An optimal carrier mobility in CQD lies in the range 10-2 cm2/Vs - 100 cm2/Vs and shows variation as a function of CQD layerthickness and the interfacial band offset.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, -3, ',', 3],[154.0, 37, '%', 2],[31.0, -3, ',', 1],[48.0, 20, '%', 1]

N
###Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells|Roha Saad,Nauman Z. Butt###
(105621, 105621)
 For Nt<missing VAR> approx 1014 cm-3,an optimally designed cell could provide 20% efficiency under AM1.5G solarspectrum without employing advanced structural optimizations such as thenanostructured electrodes.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, -3, ',', 4],[176.0, 37, '%', 3],[9.0, -3, ',', 0],[26.0, 20, '%', 0]

PbI3
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(105772, 105774)
Influence of drying temperature on morphology of M<missing VAR>APbI3 thin films and the performance of solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[445.0, 60, 'oC', 11],[456.0, 14.4, '%', 11]

CH3NH3PbI3
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(105878, 105886)
 Weused the anti-solvent method to prepare CH3NH3PbI3 thin films by spincoating and dried them at various temperature to transform adductM<missing VAR>AI.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 60, 'oC', 8],[344.0, 14.4, '%', 8]

I
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(105920, 105920)
 Weused the anti-solvent method to prepare CH3NH3PbI3 thin films by spincoating and dried them at various temperature to transform adductM<missing VAR>AI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 60, 'oC', 8],[310.0, 14.4, '%', 8]

PbI2
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(105922, 105924)
PbI2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 60, 'oC', 7],[306.0, 14.4, '%', 7]

SO
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(105928, 105929)
DMSO into CH3NH3PbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 60, 'oC', 6],[301.0, 14.4, '%', 6]

CH3NH3PbI3
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(105933, 105941)
DMSO into CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 60, 'oC', 6],[289.0, 14.4, '%', 6]

PbI3
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(105969, 105971)
 We researched in detail on therelationship between surface morphology of M<missing VAR>APbI3 thin films fabricated bythe anti-solvent method and various drying temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 60, 'oC', 5],[259.0, 14.4, '%', 5]

CH3NH3PbI3
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(106018, 106026)
 We found that surfaceroughness and grain size of CH3NH3PbI3 films together increased withincreasing drying temperature.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 60, 'oC', 4],[204.0, 14.4, '%', 4]

FF
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(106096, 106097)
 The larger grain size could efficiently reducecrystal boundaries which is advantageous for the suppression of photo-inducedcharge carrier recombination resulting in increase of FF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 60, 'oC', 3],[133.0, 14.4, '%', 3]

H
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(106147, 106147)
 However, increase ofsurface roughness resulted in larger contact area at interface which mightproduce more tarp states and poorer wettability of HTM solution leading indecrease of Jsc.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 60, 'oC', 2],[83.0, 14.4, '%', 2]

PbI3
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(106173, 106175)
 Surface morphology of M<missing VAR>APbI3 layer on the performance of solarcell devices is also an important research issue.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 60, 'oC', 1],[55.0, 14.4, '%', 1]

CH3NH3PbI3
###Influence of drying temperature on morphology of MAPbI$_3$ thin films and the performance of solar cells|Hao Zhang,Yalan Wang,Hong Wang,Meryang Ma,Shuai Dong,Qingyu Xu###
(106242, 106250)
 By optimizing the dryingtemperature to 60 oC, the highest efficiency of 14.4% was achieved for theCH3NH3PbI3-based solar cell devices.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 60, 'oC', 0],[12.0, 14.4, '%', 0]

In
###Concept of round non-flat thin film solar cells and their power conversion efficiency calculation|Jabbar Ganji###
(106348, 106348)
 In thistechnology, semiconductor layers with a thickness of micrometer are depositedon thick enough substrates to maintain physical consistency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 3, 'D', 3]

In
###Concept of round non-flat thin film solar cells and their power conversion efficiency calculation|Jabbar Ganji###
(106479, 106479)
 Inthis study, a method was first proposed to calculate the efficiency of suchcells without the need for 3D simulation, and then it is investigated usingnon-flat conical and paraboloid substrates as a novel method to enhance thelight trapping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'D', 0]

As
###Concept of round non-flat thin film solar cells and their power conversion efficiency calculation|Jabbar Ganji###
(106569, 106569)
 As a result, a significant increase in the efficiency of thestudied non-flat cells was observed and reported in comparison with the flatcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 3, 'D', 1]

In
###Concept of round non-flat thin film solar cells and their power conversion efficiency calculation|Jabbar Ganji###
(106623, 106623)
 In addition, the paraboloid shape shows a better performance than thatof the conical, to use as the cells<missing VAR> substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 3, 'D', 2]

CdS
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106688, 106689)
Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 20, 'nm', 2],[331.0, 3, '%', 5],[348.0, 47, '%', 6]

In
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106714, 106714)
 In this research, the effect of Magnesium Fluoride (MgF2) Anti-Reflection(AR) layer was investigated in quantum dot sensitized solar cells (QDSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 20, 'nm', 1],[306.0, 3, '%', 4],[323.0, 47, '%', 5]

(MgF2)
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106731, 106735)
 In this research, the effect of Magnesium Fluoride (MgF2) Anti-Reflection(AR) layer was investigated in quantum dot sensitized solar cells (QDSCs).
Featurization successful!
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 20, 'nm', 1],[285.0, 3, '%', 4],[302.0, 47, '%', 5]

Cs
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106769, 106769)
 In this research, the effect of Magnesium Fluoride (MgF2) Anti-Reflection(AR) layer was investigated in quantum dot sensitized solar cells (QDSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 20, 'nm', 1],[251.0, 3, '%', 4],[268.0, 47, '%', 5]

MgF2
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106773, 106775)
 MgF2nanoparticles with the dominant size of 20 nm were grown by a thermalevaporation method and a thin layer was formed on the front side of thefluorine-doped tin oxide (FT<missing VAR>O) substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 20, 'nm', 0],[245.0, 3, '%', 3],[262.0, 47, '%', 4]

F
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106840, 106840)
 MgF2nanoparticles with the dominant size of 20 nm were grown by a thermalevaporation method and a thin layer was formed on the front side of thefluorine-doped tin oxide (FT<missing VAR>O) substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 20, 'nm', 0],[180.0, 3, '%', 3],[197.0, 47, '%', 4]

O
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106842, 106842)
 MgF2nanoparticles with the dominant size of 20 nm were grown by a thermalevaporation method and a thin layer was formed on the front side of thefluorine-doped tin oxide (FT<missing VAR>O) substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 20, 'nm', 0],[178.0, 3, '%', 3],[195.0, 47, '%', 4]

In
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106848, 106848)
 In order to study the effect of theAR<missing VAR> layer on the efficiency of solar cells, this substrate was utilized in CdSQDSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 20, 'nm', 1],[172.0, 3, '%', 2],[189.0, 47, '%', 3]

CdS
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106893, 106894)
 In order to study the effect of theAR<missing VAR> layer on the efficiency of solar cells, this substrate was utilized in CdSQDSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 20, 'nm', 1],[126.0, 3, '%', 2],[143.0, 47, '%', 3]

SCs
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106899, 106900)
 In order to study the effect of theAR<missing VAR> layer on the efficiency of solar cells, this substrate was utilized in CdSQDSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 20, 'nm', 1],[120.0, 3, '%', 2],[137.0, 47, '%', 3]

In
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106903, 106903)
 In this conventional structure of QDSC, TiO2 nanocrystals (NCs) wereapplied on the FT<missing VAR>O substrate, and then it was sensitized with CdS quantum dots(Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 20, 'nm', 2],[117.0, 3, '%', 1],[134.0, 47, '%', 2]

SC
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106915, 106916)
 In this conventional structure of QDSC, TiO2 nanocrystals (NCs) wereapplied on the FT<missing VAR>O substrate, and then it was sensitized with CdS quantum dots(Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 20, 'nm', 2],[104.0, 3, '%', 1],[121.0, 47, '%', 2]

TiO2
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106919, 106921)
 In this conventional structure of QDSC, TiO2 nanocrystals (NCs) wereapplied on the FT<missing VAR>O substrate, and then it was sensitized with CdS quantum dots(Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 20, 'nm', 2],[99.0, 3, '%', 1],[116.0, 47, '%', 2]

(NCs)
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106925, 106928)
 In this conventional structure of QDSC, TiO2 nanocrystals (NCs) wereapplied on the FT<missing VAR>O substrate, and then it was sensitized with CdS quantum dots(Q<missing VAR>Ds).
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 20, 'nm', 2],[92.0, 3, '%', 1],[109.0, 47, '%', 2]

F
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106939, 106939)
 In this conventional structure of QDSC, TiO2 nanocrystals (NCs) wereapplied on the FT<missing VAR>O substrate, and then it was sensitized with CdS quantum dots(Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 20, 'nm', 2],[81.0, 3, '%', 1],[98.0, 47, '%', 2]

O
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106941, 106941)
 In this conventional structure of QDSC, TiO2 nanocrystals (NCs) wereapplied on the FT<missing VAR>O substrate, and then it was sensitized with CdS quantum dots(Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 20, 'nm', 2],[79.0, 3, '%', 1],[96.0, 47, '%', 2]

CdS
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106958, 106959)
 In this conventional structure of QDSC, TiO2 nanocrystals (NCs) wereapplied on the FT<missing VAR>O substrate, and then it was sensitized with CdS quantum dots(Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 20, 'nm', 2],[61.0, 3, '%', 1],[78.0, 47, '%', 2]

Ds
###Enhancement in Power Conversion Efficiency of CdS Quantum Dot Sensitized Solar Cells Through a Decrease in Light Reflection|Farzaneh Ahangarani Farahani,Atila Poro,Maryam Rezaee,Mehdi Sameni###
(106968, 106968)
 In this conventional structure of QDSC, TiO2 nanocrystals (NCs) wereapplied on the FT<missing VAR>O substrate, and then it was sensitized with CdS quantum dots(Q<missing VAR>Ds).
EXCEPTION 3: IndexError for Ds
SCs
[179.0, 20, 'nm', 2],[52.0, 3, '%', 1],[69.0, 47, '%', 2]

Cu2O
###New hybrid organic-inorganic ferrophotovoltaic perovskites nanoparticles with high voltage for indoor and IoT applications|Rémi Ndioukane,Fanta Baldé,Ndéye C. Y. Fall,Diouma Kobor,Laurence Motte###
(107238, 107240)
 One of the moststudied oxides to date as a photovoltaic active layer is the cuprous oxideCu2O.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1.3, 'eV', 2],[12.0, 2.1, 'eV', 1],[48.0, 4, '%', 2],[411.0, 3550, 'lux', 12],[428.0, 15, 'and', 12],[429.0, 30, 'min', 12],[447.0, 5.17, 'and', 12],[448.0, 5.86, 'V', 12]

In
###New hybrid organic-inorganic ferrophotovoltaic perovskites nanoparticles with high voltage for indoor and IoT applications|Rémi Ndioukane,Fanta Baldé,Ndéye C. Y. Fall,Diouma Kobor,Laurence Motte###
(107292, 107292)
 In this paperwe propose to study an emerging type of solar cell that is based onferroelectricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 1.3, 'eV', 5],[40.0, 2.1, 'eV', 2],[4.0, 4, '%', 1],[359.0, 3550, 'lux', 9],[376.0, 15, 'and', 9],[377.0, 30, 'min', 9],[395.0, 5.17, 'and', 9],[396.0, 5.86, 'V', 9]

In
###New hybrid organic-inorganic ferrophotovoltaic perovskites nanoparticles with high voltage for indoor and IoT applications|Rémi Ndioukane,Fanta Baldé,Ndéye C. Y. Fall,Diouma Kobor,Laurence Motte###
(107331, 107331)
 In this type of solar cell, a p-n junction is not necessarilyrequired, unlike conventional solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1.3, 'eV', 6],[79.0, 2.1, 'eV', 3],[43.0, 4, '%', 2],[320.0, 3550, 'lux', 8],[337.0, 15, 'and', 8],[338.0, 30, 'min', 8],[356.0, 5.17, 'and', 8],[357.0, 5.86, 'V', 8]

P
###New hybrid organic-inorganic ferrophotovoltaic perovskites nanoparticles with high voltage for indoor and IoT applications|Rémi Ndioukane,Fanta Baldé,Ndéye C. Y. Fall,Diouma Kobor,Laurence Motte###
(107537, 107537)
 PZ<missing VAR>N-4.5PT<missing VAR> nanoparticles were dispersed ina biopolymer matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 1.3, 'eV', 11],[285.0, 2.1, 'eV', 8],[249.0, 4, '%', 7],[114.0, 3550, 'lux', 3],[131.0, 15, 'and', 3],[132.0, 30, 'min', 3],[150.0, 5.17, 'and', 3],[151.0, 5.86, 'V', 3]

N
###New hybrid organic-inorganic ferrophotovoltaic perovskites nanoparticles with high voltage for indoor and IoT applications|Rémi Ndioukane,Fanta Baldé,Ndéye C. Y. Fall,Diouma Kobor,Laurence Motte###
(107539, 107539)
 PZ<missing VAR>N-4.5PT<missing VAR> nanoparticles were dispersed ina biopolymer matrix.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 1.3, 'eV', 11],[287.0, 2.1, 'eV', 8],[251.0, 4, '%', 7],[112.0, 3550, 'lux', 3],[129.0, 15, 'and', 3],[130.0, 30, 'min', 3],[148.0, 5.17, 'and', 3],[149.0, 5.86, 'V', 3]

P
###New hybrid organic-inorganic ferrophotovoltaic perovskites nanoparticles with high voltage for indoor and IoT applications|Rémi Ndioukane,Fanta Baldé,Ndéye C. Y. Fall,Diouma Kobor,Laurence Motte###
(107542, 107542)
 PZ<missing VAR>N-4.5PT<missing VAR> nanoparticles were dispersed ina biopolymer matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 1.3, 'eV', 11],[290.0, 2.1, 'eV', 8],[254.0, 4, '%', 7],[109.0, 3550, 'lux', 3],[126.0, 15, 'and', 3],[127.0, 30, 'min', 3],[145.0, 5.17, 'and', 3],[146.0, 5.86, 'V', 3]

I
###New hybrid organic-inorganic ferrophotovoltaic perovskites nanoparticles with high voltage for indoor and IoT applications|Rémi Ndioukane,Fanta Baldé,Ndéye C. Y. Fall,Diouma Kobor,Laurence Motte###
(107601, 107601)
 Hybrid thin films with these inorganic nanoparticlesembedded in a biopolymer have been successfully fabricated by spin coating onIT<missing VAR>O substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[417.0, 1.3, 'eV', 12],[349.0, 2.1, 'eV', 9],[313.0, 4, '%', 8],[50.0, 3550, 'lux', 2],[67.0, 15, 'and', 2],[68.0, 30, 'min', 2],[86.0, 5.17, 'and', 2],[87.0, 5.86, 'V', 2]

O
###New hybrid organic-inorganic ferrophotovoltaic perovskites nanoparticles with high voltage for indoor and IoT applications|Rémi Ndioukane,Fanta Baldé,Ndéye C. Y. Fall,Diouma Kobor,Laurence Motte###
(107603, 107603)
 Hybrid thin films with these inorganic nanoparticlesembedded in a biopolymer have been successfully fabricated by spin coating onIT<missing VAR>O substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 1.3, 'eV', 12],[351.0, 2.1, 'eV', 9],[315.0, 4, '%', 8],[48.0, 3550, 'lux', 2],[65.0, 15, 'and', 2],[66.0, 30, 'min', 2],[84.0, 5.17, 'and', 2],[85.0, 5.86, 'V', 2]

InAs
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107707, 107708)
Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 2.3, 'ps', 5],[302.0, 3, 'ps', 5],[305.0, 30, 'ps', 5],[409.0, 100, 'ps', 6]

AlAsSb
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107710, 107712)
Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 2.3, 'ps', 5],[298.0, 3, 'ps', 5],[301.0, 30, 'ps', 5],[405.0, 100, 'ps', 6]

N
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107726, 107726)
 Semiconductor nanowires (NWs) have shown evidence of robust hot carriereffects due to their small dimensions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 2.3, 'ps', 4],[284.0, 3, 'ps', 4],[287.0, 30, 'ps', 4],[391.0, 100, 'ps', 5]

III
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107831, 107833)
 Among various III-V semiconductors, indium arsenide (InAs) NWs arepromising candidates for their applications in advanced light harvestingdevices due to their high photo-absorptivity and high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2.3, 'ps', 2],[177.0, 3, 'ps', 2],[180.0, 30, 'ps', 2],[284.0, 100, 'ps', 3]

V
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107835, 107835)
 Among various III-V semiconductors, indium arsenide (InAs) NWs arepromising candidates for their applications in advanced light harvestingdevices due to their high photo-absorptivity and high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2.3, 'ps', 2],[175.0, 3, 'ps', 2],[178.0, 30, 'ps', 2],[282.0, 100, 'ps', 3]

(InAs)
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107844, 107847)
 Among various III-V semiconductors, indium arsenide (InAs) NWs arepromising candidates for their applications in advanced light harvestingdevices due to their high photo-absorptivity and high mobility.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2.3, 'ps', 2],[163.0, 3, 'ps', 2],[166.0, 30, 'ps', 2],[270.0, 100, 'ps', 3]

N
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107849, 107849)
 Among various III-V semiconductors, indium arsenide (InAs) NWs arepromising candidates for their applications in advanced light harvestingdevices due to their high photo-absorptivity and high mobility.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 2.3, 'ps', 2],[161.0, 3, 'ps', 2],[164.0, 30, 'ps', 2],[268.0, 100, 'ps', 3]

InAs
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107913, 107914)
 Here, weinvestigate the hot carrier dynamics in InAs-AlAsSb core-shell NWs, as well asbare-core InAs NWs, using ultrafast pump-probe spectroscopy with widely tunedpump and probe energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2.3, 'ps', 1],[96.0, 3, 'ps', 1],[99.0, 30, 'ps', 1],[203.0, 100, 'ps', 2]

AlAsSb
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107916, 107918)
 Here, weinvestigate the hot carrier dynamics in InAs-AlAsSb core-shell NWs, as well asbare-core InAs NWs, using ultrafast pump-probe spectroscopy with widely tunedpump and probe energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2.3, 'ps', 1],[92.0, 3, 'ps', 1],[95.0, 30, 'ps', 1],[199.0, 100, 'ps', 2]

N
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107924, 107924)
 Here, weinvestigate the hot carrier dynamics in InAs-AlAsSb core-shell NWs, as well asbare-core InAs NWs, using ultrafast pump-probe spectroscopy with widely tunedpump and probe energies.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2.3, 'ps', 1],[86.0, 3, 'ps', 1],[89.0, 30, 'ps', 1],[193.0, 100, 'ps', 2]

InAs
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107939, 107940)
 Here, weinvestigate the hot carrier dynamics in InAs-AlAsSb core-shell NWs, as well asbare-core InAs NWs, using ultrafast pump-probe spectroscopy with widely tunedpump and probe energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2.3, 'ps', 1],[70.0, 3, 'ps', 1],[73.0, 30, 'ps', 1],[177.0, 100, 'ps', 2]

N
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107942, 107942)
 Here, weinvestigate the hot carrier dynamics in InAs-AlAsSb core-shell NWs, as well asbare-core InAs NWs, using ultrafast pump-probe spectroscopy with widely tunedpump and probe energies.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2.3, 'ps', 1],[68.0, 3, 'ps', 1],[71.0, 30, 'ps', 1],[175.0, 100, 'ps', 2]

O
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(107994, 107994)
 We have found a lifetime of 2.3 ps for longitudinaloptical (L<missing VAR>O) phonons and hot electron lifetimes of about 3 ps and 30 ps forcarrier-carrier interactions and electron-phonon interactions, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2.3, 'ps', 0],[16.0, 3, 'ps', 0],[19.0, 30, 'ps', 0],[123.0, 100, 'ps', 1]

In
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(108036, 108036)
 Inaddition, we have investigated the electronic states in the AlAsSb-shell andfound that, despite the large band offset of the core-shell design in theconduction band, excited carriers remain in the shell longer than 100 ps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2.3, 'ps', 1],[26.0, 3, 'ps', 1],[23.0, 30, 'ps', 1],[81.0, 100, 'ps', 0]

AlAsSb
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(108058, 108060)
 Inaddition, we have investigated the electronic states in the AlAsSb-shell andfound that, despite the large band offset of the core-shell design in theconduction band, excited carriers remain in the shell longer than 100 ps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2.3, 'ps', 1],[48.0, 3, 'ps', 1],[45.0, 30, 'ps', 1],[57.0, 100, 'ps', 0]

N
###Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires|Daniel Sandner,Hamidreza Esmaielpour,Fabio del Giudice,Matthias Nuber,Reinhard Kienberger,Gregor Koblmüller,Hristo Iglev###
(108139, 108139)
 Ourresults indicate evidence of plasmon-tailored core-shell NWs for efficientlight harvesting devices, which could open potential avenues for improving theefficiency of photovoltaic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2.3, 'ps', 2],[129.0, 3, 'ps', 2],[126.0, 30, 'ps', 2],[22.0, 100, 'ps', 1]

Al
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108199, 108199)
Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga(1-x)As
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108203, 108209)
Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

C
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108236, 108236)
 The quantum well solar cell (Q<missing VAR>WSC) is a p<missing VAR> - i<missing VAR> - n<missing VAR> solar cell with quantumwells in the intrinsic region.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108284, 108286)
 Previous work has shown that Q<missing VAR>WSCs have agreater open circuit voltage (Voc) than would be provided by a cell with thequantum well effective bandgap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108351, 108353)
 This suggests that the fundamental efficiencylimits of Q<missing VAR>WSCs are greater than those of single bandgap solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108384, 108386)
 Thefollowing work investigates Q<missing VAR>WSCs in the GaAs/AlxGa1-xAs materials system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108392, 108393)
 Thefollowing work investigates Q<missing VAR>WSCs in the GaAs/AlxGa1-xAs materials system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xAs
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108396, 108400)
 Thefollowing work investigates Q<missing VAR>WSCs in the GaAs/AlxGa1-xAs materials system.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

WSC
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108421, 108423)
 Thedesign and optimisation of a Q<missing VAR>WSC in this system requires studies of thevoltage and current dependencies on the aluminium fraction.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108458, 108460)
 Q<missing VAR>WSCs withdifferent aluminium fractions have been studied and show an increasing Voc withincreasing barrier aluminium composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSC
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108541, 108543)
 We develop a model of the QE to test novelQ<missing VAR>WSC designs with a view to minimising this problem.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSC
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108772, 108774)
 A model of the QE ofcompositionally graded Q<missing VAR>WSC solar cells with back surface mirrors is developedin order to analyse the effect of these design changes.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSC
###Modelling and Optimising GaAs/Al(x)Ga(1-x)As Multiple Quantum Well Solar Cells|James P. Connolly###
(108834, 108836)
 These changes areimplemented separately in a number of Q<missing VAR>WSC designs and the resultingexperimental data compared with the model.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(108925, 108925)
 Following the recent success of monolithically integrated Perovskite/Sitandem solar cells, great interest has been raised in searching for alternativewide bandgap top-cell materials with prospects of a fully earth-abundant,stable and efficient tandem solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 10, 'nm', 6],[437.0, 715, 'mV', 9],[498.0, 1.1, '%', 10],[509.0, 900, 'mV', 10]

Cs
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109002, 109002)
 Thin film chalcogenides (T<missing VAR>FCs) such asthe Cu2ZnSnS4 (CZTS) could be suitable top-cell materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 10, 'nm', 5],[360.0, 715, 'mV', 8],[421.0, 1.1, '%', 9],[432.0, 900, 'mV', 9]

Cu2ZnSnS4
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109012, 109017)
 Thin film chalcogenides (T<missing VAR>FCs) such asthe Cu2ZnSnS4 (CZTS) could be suitable top-cell materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 10, 'nm', 5],[345.0, 715, 'mV', 8],[406.0, 1.1, '%', 9],[417.0, 900, 'mV', 9]

C
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109020, 109020)
 Thin film chalcogenides (T<missing VAR>FCs) such asthe Cu2ZnSnS4 (CZTS) could be suitable top-cell materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 10, 'nm', 5],[342.0, 715, 'mV', 8],[403.0, 1.1, '%', 9],[414.0, 900, 'mV', 9]

S
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109023, 109023)
 Thin film chalcogenides (T<missing VAR>FCs) such asthe Cu2ZnSnS4 (CZTS) could be suitable top-cell materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 10, 'nm', 5],[339.0, 715, 'mV', 8],[400.0, 1.1, '%', 9],[411.0, 900, 'mV', 9]

FCs
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109043, 109044)
 However, T<missing VAR>FCs havethe disadvantage that generally at least one high temperature step (>500 C) isneeded during the synthesis, which could contaminate the Si bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 10, 'nm', 4],[318.0, 715, 'mV', 7],[379.0, 1.1, '%', 8],[390.0, 900, 'mV', 8]

C
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109073, 109073)
 However, T<missing VAR>FCs havethe disadvantage that generally at least one high temperature step (>500 C) isneeded during the synthesis, which could contaminate the Si bottom cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 10, 'nm', 4],[289.0, 715, 'mV', 7],[350.0, 1.1, '%', 8],[361.0, 900, 'mV', 8]

Si
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109096, 109096)
 However, T<missing VAR>FCs havethe disadvantage that generally at least one high temperature step (>500 C) isneeded during the synthesis, which could contaminate the Si bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 10, 'nm', 4],[266.0, 715, 'mV', 7],[327.0, 1.1, '%', 8],[338.0, 900, 'mV', 8]

C
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109121, 109121)
 Here,we systematically investigate the monolithic integration of CZTS on a Si bottomsolar cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 10, 'nm', 3],[241.0, 715, 'mV', 6],[302.0, 1.1, '%', 7],[313.0, 900, 'mV', 7]

S
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109124, 109124)
 Here,we systematically investigate the monolithic integration of CZTS on a Si bottomsolar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 10, 'nm', 3],[238.0, 715, 'mV', 6],[299.0, 1.1, '%', 7],[310.0, 900, 'mV', 7]

Si
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109130, 109130)
 Here,we systematically investigate the monolithic integration of CZTS on a Si bottomsolar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 10, 'nm', 3],[232.0, 715, 'mV', 6],[293.0, 1.1, '%', 7],[304.0, 900, 'mV', 7]

OP
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109161, 109162)
 A thermally resilient double-sided Tunnel Oxide Passivated Contact(T<missing VAR>OPCon) structure is used as bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 10, 'nm', 2],[200.0, 715, 'mV', 5],[261.0, 1.1, '%', 6],[272.0, 900, 'mV', 6]

TiN
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109190, 109191)
 A thin (<25 nm) TiN layer betweenthe top and bottom cells, doubles as diffusion barrier and recombination layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 10, 'nm', 1],[171.0, 715, 'mV', 4],[232.0, 1.1, '%', 5],[243.0, 900, 'mV', 5]

TiN
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109231, 109232)
We show that TiN successfully mitigates in-diffusion of CZTS elements into thec<missing VAR>-Si bulk during the high temperature sulfurization process, and find noevidence of electrically active deep Si bulk defects in samples protected byjust 10 nm TiN.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 10, 'nm', 0],[130.0, 715, 'mV', 3],[191.0, 1.1, '%', 4],[202.0, 900, 'mV', 4]

C
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109244, 109244)
We show that TiN successfully mitigates in-diffusion of CZTS elements into thec<missing VAR>-Si bulk during the high temperature sulfurization process, and find noevidence of electrically active deep Si bulk defects in samples protected byjust 10 nm TiN.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 10, 'nm', 0],[118.0, 715, 'mV', 3],[179.0, 1.1, '%', 4],[190.0, 900, 'mV', 4]

S
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109247, 109247)
We show that TiN successfully mitigates in-diffusion of CZTS elements into thec<missing VAR>-Si bulk during the high temperature sulfurization process, and find noevidence of electrically active deep Si bulk defects in samples protected byjust 10 nm TiN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 10, 'nm', 0],[115.0, 715, 'mV', 3],[176.0, 1.1, '%', 4],[187.0, 900, 'mV', 4]

Si
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109258, 109258)
We show that TiN successfully mitigates in-diffusion of CZTS elements into thec<missing VAR>-Si bulk during the high temperature sulfurization process, and find noevidence of electrically active deep Si bulk defects in samples protected byjust 10 nm TiN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 10, 'nm', 0],[104.0, 715, 'mV', 3],[165.0, 1.1, '%', 4],[176.0, 900, 'mV', 4]

Si
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109292, 109292)
We show that TiN successfully mitigates in-diffusion of CZTS elements into thec<missing VAR>-Si bulk during the high temperature sulfurization process, and find noevidence of electrically active deep Si bulk defects in samples protected byjust 10 nm TiN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 10, 'nm', 0],[70.0, 715, 'mV', 3],[131.0, 1.1, '%', 4],[142.0, 900, 'mV', 4]

TiN
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109310, 109311)
We show that TiN successfully mitigates in-diffusion of CZTS elements into thec<missing VAR>-Si bulk during the high temperature sulfurization process, and find noevidence of electrically active deep Si bulk defects in samples protected byjust 10 nm TiN.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 10, 'nm', 0],[51.0, 715, 'mV', 3],[112.0, 1.1, '%', 4],[123.0, 900, 'mV', 4]

Si
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109326, 109326)
 Post-process minority carrier lifetime in Si exceeded 1.5 ,s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 10, 'nm', 1],[36.0, 715, 'mV', 2],[97.0, 1.1, '%', 3],[108.0, 900, 'mV', 3]

C
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109404, 109404)
 Based on these results, we demonstrate a firstproof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1%and a Voc of 900 mV.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 10, 'nm', 4],[42.0, 715, 'mV', 1],[19.0, 1.1, '%', 0],[30.0, 900, 'mV', 0]

S/Si
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109407, 109409)
 Based on these results, we demonstrate a firstproof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1%and a Voc of 900 mV.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[99.0, 10, 'nm', 4],[45.0, 715, 'mV', 1],[14.0, 1.1, '%', 0],[25.0, 900, 'mV', 0]

Si
###Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier|Alireza Hajijafarassar,Filipe Martinho,Fredrik Stulen,Sigbjørn Grini,Simón López-Mariño,Moises Espíndola-Rodríguez,Max Döbeli,Stela Canulescu,Eugen Stamate,Mungunshagai Gansukh,Sara Engberg,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(109466, 109466)
 A general implication of this study is that the growth ofcomplex semiconductors on Si using high temperature steps is technicallyfeasible, and can potentially lead to efficient monolithically integratedtwo-terminal tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 10, 'nm', 5],[104.0, 715, 'mV', 2],[43.0, 1.1, '%', 1],[32.0, 900, 'mV', 1]

U
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109520, 109520)
UMG silicon for solar PV from defects detection to PV module degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 100, '%', 3],[186.0, 20.76, '%', 4],[219.0, 20.76, '%', 5],[241.0, 100, '%', 5],[347.0, 100, '%', 8],[421.0, 24, 'months', 9],[450.0, 25, 'C', 9]

PV
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109530, 109531)
UMG silicon for solar PV from defects detection to PV module degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 100, '%', 3],[175.0, 20.76, '%', 4],[208.0, 20.76, '%', 5],[230.0, 100, '%', 5],[336.0, 100, '%', 8],[410.0, 24, 'months', 9],[439.0, 25, 'C', 9]

PV
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109541, 109542)
UMG silicon for solar PV from defects detection to PV module degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 100, '%', 3],[164.0, 20.76, '%', 4],[197.0, 20.76, '%', 5],[219.0, 100, '%', 5],[325.0, 100, '%', 8],[399.0, 24, 'months', 9],[428.0, 25, 'C', 9]

U
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109558, 109558)
 Upgraded metallurgical grade silicon (UMG-Si) for photovoltaic (PV) solarapplications has been manufactured through the metallurgical route by means ofthe process developed by Ferrosolar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 100, '%', 2],[148.0, 20.76, '%', 3],[181.0, 20.76, '%', 4],[203.0, 100, '%', 4],[309.0, 100, '%', 7],[383.0, 24, 'months', 8],[412.0, 25, 'C', 8]

Si
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109562, 109562)
 Upgraded metallurgical grade silicon (UMG-Si) for photovoltaic (PV) solarapplications has been manufactured through the metallurgical route by means ofthe process developed by Ferrosolar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 100, '%', 2],[144.0, 20.76, '%', 3],[177.0, 20.76, '%', 4],[199.0, 100, '%', 4],[305.0, 100, '%', 7],[379.0, 24, 'months', 8],[408.0, 25, 'C', 8]

(PV)
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109569, 109572)
 Upgraded metallurgical grade silicon (UMG-Si) for photovoltaic (PV) solarapplications has been manufactured through the metallurgical route by means ofthe process developed by Ferrosolar.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 100, '%', 2],[134.0, 20.76, '%', 3],[167.0, 20.76, '%', 4],[189.0, 100, '%', 4],[295.0, 100, '%', 7],[369.0, 24, 'months', 8],[398.0, 25, 'C', 8]

In
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109611, 109611)
 In an ambitious mass production test,performed in commercial solar cells and modules production lines, the siliconwas proven to be appropriate for photovoltaics applications (Fornies et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 100, '%', 1],[95.0, 20.76, '%', 2],[128.0, 20.76, '%', 3],[150.0, 100, '%', 3],[256.0, 100, '%', 6],[330.0, 24, 'months', 7],[359.0, 25, 'C', 7]

U
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109764, 109764)
 Energies 12), reaching, in a conventional productionline, up to 20.76% of solar cell efficiency with multicrystalline cells made of100% UMG silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 100, '%', 2],[58.0, 20.76, '%', 1],[25.0, 20.76, '%', 0],[3.0, 100, '%', 0],[103.0, 100, '%', 3],[177.0, 24, 'months', 4],[206.0, 25, 'C', 4]

In
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109771, 109771)
 In this paper we present more results from the mentionedmassive test.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 100, '%', 3],[65.0, 20.76, '%', 2],[32.0, 20.76, '%', 1],[10.0, 100, '%', 1],[96.0, 100, '%', 2],[170.0, 24, 'months', 3],[199.0, 25, 'C', 3]

U
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109822, 109822)
 Defect engineering is being applied to improve the bulk lifetimeof the UMG wafers and to guide in the identification of the limiting defects inthe material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 100, '%', 4],[116.0, 20.76, '%', 3],[83.0, 20.76, '%', 2],[61.0, 100, '%', 2],[45.0, 100, '%', 1],[119.0, 24, 'months', 2],[148.0, 25, 'C', 2]

U
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109870, 109870)
 Moreover, the modules produced with 100% UMG silicon solar cellswere installed together with the modules produced in the same production linewith polysilicon material to assess the degradation of the UMG silicon whencompared to polysilicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 100, '%', 5],[164.0, 20.76, '%', 4],[131.0, 20.76, '%', 3],[109.0, 100, '%', 3],[3.0, 100, '%', 0],[71.0, 24, 'months', 1],[100.0, 25, 'C', 1]

U
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109924, 109924)
 Moreover, the modules produced with 100% UMG silicon solar cellswere installed together with the modules produced in the same production linewith polysilicon material to assess the degradation of the UMG silicon whencompared to polysilicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 100, '%', 5],[218.0, 20.76, '%', 4],[185.0, 20.76, '%', 3],[163.0, 100, '%', 3],[57.0, 100, '%', 0],[17.0, 24, 'months', 1],[46.0, 25, 'C', 1]

PV
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109947, 109948)
 After 24 months of outdoor PV generation, thedegradation, in terms of Performance Ratio at 25C (25PR) diminution, has beenthe same for both types of modules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 100, '%', 6],[241.0, 20.76, '%', 5],[208.0, 20.76, '%', 4],[186.0, 100, '%', 4],[80.0, 100, '%', 1],[6.0, 24, 'months', 0],[22.0, 25, 'C', 0]

P
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(109974, 109974)
 After 24 months of outdoor PV generation, thedegradation, in terms of Performance Ratio at 25C (25PR) diminution, has beenthe same for both types of modules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 100, '%', 6],[268.0, 20.76, '%', 5],[235.0, 20.76, '%', 4],[213.0, 100, '%', 4],[107.0, 100, '%', 1],[33.0, 24, 'months', 0],[4.0, 25, 'C', 0]

C
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(110014, 110014)
 Additionally, a Life Cycle Assessment (L<missing VAR>CA)has been performed for this UMG silicon and state-of-the-art Siemenspolysilicon to compare the environmental impact of both silicon feedstocks.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 100, '%', 7],[308.0, 20.76, '%', 6],[275.0, 20.76, '%', 5],[253.0, 100, '%', 5],[147.0, 100, '%', 2],[73.0, 24, 'months', 1],[44.0, 25, 'C', 1]

U
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(110029, 110029)
 Additionally, a Life Cycle Assessment (L<missing VAR>CA)has been performed for this UMG silicon and state-of-the-art Siemenspolysilicon to compare the environmental impact of both silicon feedstocks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 100, '%', 7],[323.0, 20.76, '%', 6],[290.0, 20.76, '%', 5],[268.0, 100, '%', 5],[162.0, 100, '%', 2],[88.0, 24, 'months', 1],[59.0, 25, 'C', 1]

U
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(110127, 110127)
 Theresults presented in this paper; chemical analysis of wafers, defectengineering, low degradation, average efficiency and environmental assessment,lead to a complete study of UMG silicon, confirming its potential to be used asraw material for PV applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[430.0, 100, '%', 8],[421.0, 20.76, '%', 7],[388.0, 20.76, '%', 6],[366.0, 100, '%', 6],[260.0, 100, '%', 3],[186.0, 24, 'months', 2],[157.0, 25, 'C', 2]

PV
###UMG silicon for solar PV: from defects detection to PV module degradation|Eduardo Fornies,Carlos del Canizo,Laura Mendez,Alejandro Souto,Antonio Perez-Vazquez,Daniel Garrain###
(110155, 110156)
 Theresults presented in this paper; chemical analysis of wafers, defectengineering, low degradation, average efficiency and environmental assessment,lead to a complete study of UMG silicon, confirming its potential to be used asraw material for PV applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[458.0, 100, '%', 8],[449.0, 20.76, '%', 7],[416.0, 20.76, '%', 6],[394.0, 100, '%', 6],[288.0, 100, '%', 3],[214.0, 24, 'months', 2],[185.0, 25, 'C', 2]

VOC
###Understanding and Minimizing $V_{OC}$ Losses in All-Perovskite Tandem Photovoltaics|Jarla Thiesbrummel,Francisco Peña-Camargo,Kai Oliver Brinkmann,Emilio Gutierrez-Partida,Fengjiu Yang,Jonathan Warby,Steve Albrecht,Dieter Neher,Thomas Riedl,Henry J. Snaith,Martin Stolterfoht,Felix Lang###
(110175, 110177)
Understanding and Minimizing VOC Losses in All-Perovskite Tandem Photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 120, 'mV', 6],[413.0, 2.0, 'V', 7],[425.0, 23.7, '%', 7],[450.0, 25.2, '%', 8],[456.0, 27.0, '%', 8],[529.0, 28.4, '%', 9]

(VOC)
###Understanding and Minimizing $V_{OC}$ Losses in All-Perovskite Tandem Photovoltaics|Jarla Thiesbrummel,Francisco Peña-Camargo,Kai Oliver Brinkmann,Emilio Gutierrez-Partida,Fengjiu Yang,Jonathan Warby,Steve Albrecht,Dieter Neher,Thomas Riedl,Henry J. Snaith,Martin Stolterfoht,Felix Lang###
(110476, 110480)
We consecutively improve the high-gap perovskite subcell through amulti-faceted approach, allowing us to enhance the open-circuit voltage(VOC) of the subcell by up to 120 mV.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 120, 'mV', 0],[110.0, 2.0, 'V', 1],[122.0, 23.7, '%', 1],[147.0, 25.2, '%', 2],[153.0, 27.0, '%', 2],[226.0, 28.4, '%', 3]

VOC
###Understanding and Minimizing $V_{OC}$ Losses in All-Perovskite Tandem Photovoltaics|Jarla Thiesbrummel,Francisco Peña-Camargo,Kai Oliver Brinkmann,Emilio Gutierrez-Partida,Fengjiu Yang,Jonathan Warby,Steve Albrecht,Dieter Neher,Thomas Riedl,Henry J. Snaith,Martin Stolterfoht,Felix Lang###
(110541, 110543)
 Due to the (quasi) lossless indiumoxide interconnect which we employ for the first time in all-perovskitetandems, the VOC improvements achieved in the high-gap perovskitestranslate directly to improved all-perovskite tandem solar cells with achampion VOC of 2.00 V and a stabilized efficiency of 23.7%.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 120, 'mV', 1],[47.0, 2.0, 'V', 0],[59.0, 23.7, '%', 0],[84.0, 25.2, '%', 1],[90.0, 27.0, '%', 1],[163.0, 28.4, '%', 2]

VOC
###Understanding and Minimizing $V_{OC}$ Losses in All-Perovskite Tandem Photovoltaics|Jarla Thiesbrummel,Francisco Peña-Camargo,Kai Oliver Brinkmann,Emilio Gutierrez-Partida,Fengjiu Yang,Jonathan Warby,Steve Albrecht,Dieter Neher,Thomas Riedl,Henry J. Snaith,Martin Stolterfoht,Felix Lang###
(110585, 110587)
 Due to the (quasi) lossless indiumoxide interconnect which we employ for the first time in all-perovskitetandems, the VOC improvements achieved in the high-gap perovskitestranslate directly to improved all-perovskite tandem solar cells with achampion VOC of 2.00 V and a stabilized efficiency of 23.7%.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 120, 'mV', 1],[3.0, 2.0, 'V', 0],[15.0, 23.7, '%', 0],[40.0, 25.2, '%', 1],[46.0, 27.0, '%', 1],[119.0, 28.4, '%', 2]

In
###Pushing limits of photovoltaics and photodetection using radial junction nanowire devices|Vidur Raj,Yi Zhu,Kaushal Vora,Lan Fu,Hark Hoe Tan,Chennupati Jagadish###
(111238, 111238)
 Incomparison, the axial junction planar device made using same substrate asabsorber showed less than 1% solar cell efficiency and almost no photodetectionat 0 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 17.2, '%', 1],[3.0, 50, 'ps', 1],[35.0, 1, '%', 0],[54.0, 0, 'V', 0]

III
###Pushing limits of photovoltaics and photodetection using radial junction nanowire devices|Vidur Raj,Yi Zhu,Kaushal Vora,Lan Fu,Hark Hoe Tan,Chennupati Jagadish###
(111372, 111374)
 The proposeddevice holds huge promise for III-V based photovoltaics and photodetectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 17.2, '%', 3],[137.0, 50, 'ps', 3],[99.0, 1, '%', 2],[80.0, 0, 'V', 2]

V
###Pushing limits of photovoltaics and photodetection using radial junction nanowire devices|Vidur Raj,Yi Zhu,Kaushal Vora,Lan Fu,Hark Hoe Tan,Chennupati Jagadish###
(111376, 111376)
 The proposeddevice holds huge promise for III-V based photovoltaics and photodetectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 17.2, '%', 3],[141.0, 50, 'ps', 3],[103.0, 1, '%', 2],[84.0, 0, 'V', 2]

ZnO
###Urchin-inspired zinc oxide as building blocks for nanostructured solar cells|Jamil Elias,Mikhael Bechelany,Ivo Utke,Rolf Erni,Davood Hosseini,Johann Michler,Laetitia Philippe###
(111905, 111906)
The performance of single-layer arrays of urchin-inspired ZnO nanowire buildingblocks competes to that of planar nanowire carpets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 15, '%', 2],[107.0, 35, '%', 2],[138.0, 90, '%', 3],[156.0, 1.33, '%', 4]

CdSe
###Urchin-inspired zinc oxide as building blocks for nanostructured solar cells|Jamil Elias,Mikhael Bechelany,Ivo Utke,Rolf Erni,Davood Hosseini,Johann Michler,Laetitia Philippe###
(111960, 111961)
 We illustrate thiscapability by fabricating fully-inorganic extremely thin absorber solar cellsusing CdSe as absorber and CuSCN as hole-collector material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 15, '%', 1],[52.0, 35, '%', 1],[83.0, 90, '%', 2],[101.0, 1.33, '%', 3]

CuSCN
###Urchin-inspired zinc oxide as building blocks for nanostructured solar cells|Jamil Elias,Mikhael Bechelany,Ivo Utke,Rolf Erni,Davood Hosseini,Johann Michler,Laetitia Philippe###
(111969, 111972)
 We illustrate thiscapability by fabricating fully-inorganic extremely thin absorber solar cellsusing CdSe as absorber and CuSCN as hole-collector material.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 15, '%', 1],[41.0, 35, '%', 1],[72.0, 90, '%', 2],[90.0, 1.33, '%', 3]

P
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112168, 112168)
 This includes the first observations of the anomalous photovoltaiceffect (APE) and the bulk photovoltaic effect (BPE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BP
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112183, 112184)
 This includes the first observations of the anomalous photovoltaiceffect (APE) and the bulk photovoltaic effect (BPE).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112219, 112222)
BiFeO3, CsSnI3, CH3NH3PbI3) in solar cells emphasises that polar semiconductorscan be used in conventional photovoltaic architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsSnI3
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112225, 112228)
BiFeO3, CsSnI3, CH3NH3PbI3) in solar cells emphasises that polar semiconductorscan be used in conventional photovoltaic architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112238, 112239)
BiFeO3, CsSnI3, CH3NH3PbI3) in solar cells emphasises that polar semiconductorscan be used in conventional photovoltaic architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112310, 112310)
 We review developmentsin this field, with a particular emphasis on the materials known to display theAPE<missing VAR>/BPE<missing VAR> (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BP
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112313, 112314)
 We review developmentsin this field, with a particular emphasis on the materials known to display theAPE<missing VAR>/BPE<missing VAR> (e.g.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnS
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112323, 112324)
 ZnS, CdTe, SbSI), and the theoretical explanation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112327, 112328)
 ZnS, CdTe, SbSI), and the theoretical explanation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112333, 112333)
 ZnS, CdTe, SbSI), and the theoretical explanation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ferroelectric Materials for Solar Energy Conversion: Photoferroics Revisited|Keith T. Butler,Jarvist M. Frost,Aron Walsh###
(112375, 112375)
 In addition to discussing the implications of aferroelectric absorber layer, and the solid state theory of polarisation (Berryphase analysis), design principles and opportunities for high-efficiencyferroelectric photovoltaics are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112482, 112482)
 Solar cells with the structure IT<missing VAR>O-PEDOT<missing VAR>PSS-AgSnS-Al were fabricated withthe active layer of tin sulphide with silver nano-particles (AgSnS) grown bythermal co-evaporation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 40, '%', 4]

O
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112484, 112484)
 Solar cells with the structure IT<missing VAR>O-PEDOT<missing VAR>PSS-AgSnS-Al were fabricated withthe active layer of tin sulphide with silver nano-particles (AgSnS) grown bythermal co-evaporation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 40, '%', 4]

P
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112486, 112486)
 Solar cells with the structure IT<missing VAR>O-PEDOT<missing VAR>PSS-AgSnS-Al were fabricated withthe active layer of tin sulphide with silver nano-particles (AgSnS) grown bythermal co-evaporation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 40, '%', 4]

O
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112489, 112489)
 Solar cells with the structure IT<missing VAR>O-PEDOT<missing VAR>PSS-AgSnS-Al were fabricated withthe active layer of tin sulphide with silver nano-particles (AgSnS) grown bythermal co-evaporation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 40, '%', 4]

PSS
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112491, 112493)
 Solar cells with the structure IT<missing VAR>O-PEDOT<missing VAR>PSS-AgSnS-Al were fabricated withthe active layer of tin sulphide with silver nano-particles (AgSnS) grown bythermal co-evaporation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 40, '%', 4]

AgSnS
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112495, 112497)
 Solar cells with the structure IT<missing VAR>O-PEDOT<missing VAR>PSS-AgSnS-Al were fabricated withthe active layer of tin sulphide with silver nano-particles (AgSnS) grown bythermal co-evaporation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 40, '%', 4]

Al
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112499, 112499)
 Solar cells with the structure IT<missing VAR>O-PEDOT<missing VAR>PSS-AgSnS-Al were fabricated withthe active layer of tin sulphide with silver nano-particles (AgSnS) grown bythermal co-evaporation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 40, '%', 4]

(AgSnS)
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112528, 112532)
 Solar cells with the structure IT<missing VAR>O-PEDOT<missing VAR>PSS-AgSnS-Al were fabricated withthe active layer of tin sulphide with silver nano-particles (AgSnS) grown bythermal co-evaporation.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 40, '%', 4]

Ag
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112602, 112602)
 Results showed that the Ag nanoparticles act asscattering centers, resulting in longer optical path lengths for incidentlight.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 40, '%', 2]

I
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112684, 112684)
 This in turn results in more charge carriers being generated and thusenhances the efficiency of the structure as compared to the pristineIT<missing VAR>O-PEDOT<missing VAR>PSS-SnS-Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 40, '%', 1]

O
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112686, 112686)
 This in turn results in more charge carriers being generated and thusenhances the efficiency of the structure as compared to the pristineIT<missing VAR>O-PEDOT<missing VAR>PSS-SnS-Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 40, '%', 1]

P
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112688, 112688)
 This in turn results in more charge carriers being generated and thusenhances the efficiency of the structure as compared to the pristineIT<missing VAR>O-PEDOT<missing VAR>PSS-SnS-Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 40, '%', 1]

O
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112691, 112691)
 This in turn results in more charge carriers being generated and thusenhances the efficiency of the structure as compared to the pristineIT<missing VAR>O-PEDOT<missing VAR>PSS-SnS-Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 40, '%', 1]

PSS
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112693, 112695)
 This in turn results in more charge carriers being generated and thusenhances the efficiency of the structure as compared to the pristineIT<missing VAR>O-PEDOT<missing VAR>PSS-SnS-Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 40, '%', 1]

SnS
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112697, 112698)
 This in turn results in more charge carriers being generated and thusenhances the efficiency of the structure as compared to the pristineIT<missing VAR>O-PEDOT<missing VAR>PSS-SnS-Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 40, '%', 1]

Al
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112700, 112700)
 This in turn results in more charge carriers being generated and thusenhances the efficiency of the structure as compared to the pristineIT<missing VAR>O-PEDOT<missing VAR>PSS-SnS-Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 40, '%', 1]

SnS
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112715, 112716)
 The plasmonic solar cells of SnS showed animprovement of more than 40%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 40, '%', 0]

SnS
###Improved Efficiency of Plasmonic Tin Sulfide Solar Cells|Priyal Jain,P. Arun###
(112764, 112765)
 The results are encouraging and suggests moreconcerted effort needs to be made on SnS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 40, '%', 1]

SH
###A concept for Lithography-free patterning of silicon heterojunction back-contacted solar cells by laser processing|Bugra Turan,Kaining Ding,Stefan Haas###
(113154, 113155)
 Silicon heterojunction (SHJ) solar cells with an interdigitated back-contact(IBC) exhibit high conversion efficiencies of up to 25.6%.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 25.6, '%', 0]

(IBC)
###A concept for Lithography-free patterning of silicon heterojunction back-contacted solar cells by laser processing|Bugra Turan,Kaining Ding,Stefan Haas###
(113174, 113178)
 Silicon heterojunction (SHJ) solar cells with an interdigitated back-contact(IBC) exhibit high conversion efficiencies of up to 25.6%.
Featurization successful!
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 25.6, '%', 0]

IBC
###A concept for Lithography-free patterning of silicon heterojunction back-contacted solar cells by laser processing|Bugra Turan,Kaining Ding,Stefan Haas###
(113295, 113297)
 We propose a patterning approach for IBC SHJ<missing VAR> solar cells free of anyphoto-lithography with the help of laser-induced forward transfer (L<missing VAR>IFT) of theindividual layer stacks to create the required back-contact pattern.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 25.6, '%', 3]

SH
###A concept for Lithography-free patterning of silicon heterojunction back-contacted solar cells by laser processing|Bugra Turan,Kaining Ding,Stefan Haas###
(113299, 113300)
 We propose a patterning approach for IBC SHJ<missing VAR> solar cells free of anyphoto-lithography with the help of laser-induced forward transfer (L<missing VAR>IFT) of theindividual layer stacks to create the required back-contact pattern.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 25.6, '%', 3]

IF
###A concept for Lithography-free patterning of silicon heterojunction back-contacted solar cells by laser processing|Bugra Turan,Kaining Ding,Stefan Haas###
(113336, 113337)
 We propose a patterning approach for IBC SHJ<missing VAR> solar cells free of anyphoto-lithography with the help of laser-induced forward transfer (L<missing VAR>IFT) of theindividual layer stacks to create the required back-contact pattern.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 25.6, '%', 3]

BSF
###A concept for Lithography-free patterning of silicon heterojunction back-contacted solar cells by laser processing|Bugra Turan,Kaining Ding,Stefan Haas###
(113434, 113436)
 Theconcept has the potential to lower the number of processing steps significantlywhile at the same time giving a large degree of freedom in the processingconditions optimization of emitter and BSF since deposition of theintrinsic/doped layers and processing of the wafer are all independent fromeach other.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 25.6, '%', 4]

AlGaAs/GaAs
###Modeling of novel lateral AlGaAs/GaAs quantum well solar cell|M. Rashidi,Asghar Asgari###
(113493, 113498)
Modeling of novel lateral AlGaAs/GaAs quantum well solar cell.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Modeling of novel lateral AlGaAs/GaAs quantum well solar cell|M. Rashidi,Asghar Asgari###
(113509, 113509)
 In this paper, a novel lateral quantum well solar cell has been introduced,and the structural parameters effects of these nano-structures on theperformance of the device have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Micro-engineered CH$_3$NH$_3$PbI$_3$ nanowire/graphene phototransistor for low intensity light detection at room temperature|M. Spina,M. Lehmann,B. Náfrádi,L. Bernard,E. Bonvin,R. Gaál,A. Magrez,L. Forró,E. Horváth###
(113875, 113883)
Micro-engineered CH3NH3PbI3 nanowire/graphene phototransistor for low intensity light detection at room temperature.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 20.1, '%', 1],[129.0, 180, 'A', 2]

W
###Micro-engineered CH$_3$NH$_3$PbI$_3$ nanowire/graphene phototransistor for low intensity light detection at room temperature|M. Spina,M. Lehmann,B. Náfrádi,L. Bernard,E. Bonvin,R. Gaál,A. Magrez,L. Forró,E. Horváth###
(114009, 114009)
 Recently the peculiar light harvestingproperties of organometal halide perovskites have been exploited inphotodetectors where responsivities of 3.5 A/W and 180 A/W have beenrespectively achieved for pure perovskite-based devices and hybridnanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 20.1, '%', 1],[3.0, 180, 'A', 0]

W
###Micro-engineered CH$_3$NH$_3$PbI$_3$ nanowire/graphene phototransistor for low intensity light detection at room temperature|M. Spina,M. Lehmann,B. Náfrádi,L. Bernard,E. Bonvin,R. Gaál,A. Magrez,L. Forró,E. Horváth###
(114014, 114014)
 Recently the peculiar light harvestingproperties of organometal halide perovskites have been exploited inphotodetectors where responsivities of 3.5 A/W and 180 A/W have beenrespectively achieved for pure perovskite-based devices and hybridnanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 20.1, '%', 1],[2.0, 180, 'A', 0]

W
###Micro-engineered CH$_3$NH$_3$PbI$_3$ nanowire/graphene phototransistor for low intensity light detection at room temperature|M. Spina,M. Lehmann,B. Náfrádi,L. Bernard,E. Bonvin,R. Gaál,A. Magrez,L. Forró,E. Horváth###
(114095, 114095)
 Here, we report on the first hybrid phototransistors where theperformance of a network of photoactive Methylammonium Lead Iodide nanowires(hereafter M<missing VAR>APbI3NW) are enhanced by CVD<missing VAR>-grown monolayer graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 20.1, '%', 2],[83.0, 180, 'A', 1]

CV
###Micro-engineered CH$_3$NH$_3$PbI$_3$ nanowire/graphene phototransistor for low intensity light detection at room temperature|M. Spina,M. Lehmann,B. Náfrádi,L. Bernard,E. Bonvin,R. Gaál,A. Magrez,L. Forró,E. Horváth###
(114104, 114105)
 Here, we report on the first hybrid phototransistors where theperformance of a network of photoactive Methylammonium Lead Iodide nanowires(hereafter M<missing VAR>APbI3NW) are enhanced by CVD<missing VAR>-grown monolayer graphene.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 20.1, '%', 2],[92.0, 180, 'A', 1]

W
###Micro-engineered CH$_3$NH$_3$PbI$_3$ nanowire/graphene phototransistor for low intensity light detection at room temperature|M. Spina,M. Lehmann,B. Náfrádi,L. Bernard,E. Bonvin,R. Gaál,A. Magrez,L. Forró,E. Horváth###
(114137, 114137)
 Thesedevices show responsivities as high as 2.6x<missing VAR>106 A/W in the visible rangeshowing potential as room-temperature single-electron detector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 20.1, '%', 3],[125.0, 180, 'A', 2]

I
###Opposites Attract, Muons as Direct Probes for Iodide Diffusion in Methyl Ammonium Lead Iodide|D. W. Ferdani,A. L. Johnson,S. E. Lewis,P. J. Baker,P. J. Cameron###
(114354, 114354)
 Here we use muon spin relaxationto directly probe iodide diffusion in methyl ammonium lead iodide (M<missing VAR>API).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 300, 'K', 2]

PI
###Opposites Attract, Muons as Direct Probes for Iodide Diffusion in Methyl Ammonium Lead Iodide|D. W. Ferdani,A. L. Johnson,S. E. Lewis,P. J. Baker,P. J. Cameron###
(114490, 114491)
 The experiment was carried out in the dark with no externalbiases applied and allowed us to calculate a diffusion coefficient of 1.6x<missing VAR>10-14 cm2/s<missing VAR> for iodide in M<missing VAR>API at 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 300, 'K', 0]

P
###Determining the True Optical Gap in a High-Performance Organic Photovoltaic Polymer Using Single-Molecule Spectroscopy|Gordon J. Hedley,Florian Steiner,Jan Vogelsang,John M. Lupton###
(114633, 114633)
 Here, we reportthat the true optical gap of one prototypical material, PT<missing VAR>B7, is in fact atsignificantly higher energy than has previously been reported, indicating thatthe red absorption utilized in these materials in solar cells is entirely dueto chain aggregation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B7
###Determining the True Optical Gap in a High-Performance Organic Photovoltaic Polymer Using Single-Molecule Spectroscopy|Gordon J. Hedley,Florian Steiner,Jan Vogelsang,John M. Lupton###
(114635, 114636)
 Here, we reportthat the true optical gap of one prototypical material, PT<missing VAR>B7, is in fact atsignificantly higher energy than has previously been reported, indicating thatthe red absorption utilized in these materials in solar cells is entirely dueto chain aggregation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Determining the True Optical Gap in a High-Performance Organic Photovoltaic Polymer Using Single-Molecule Spectroscopy|Gordon J. Hedley,Florian Steiner,Jan Vogelsang,John M. Lupton###
(114718, 114718)
 Using single-molecule spectroscopy we find that PL<missing VAR> fromisolated nanoscale aggregates consists of multiple independently emittingchromophores.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Determining the True Optical Gap in a High-Performance Organic Photovoltaic Polymer Using Single-Molecule Spectroscopy|Gordon J. Hedley,Florian Steiner,Jan Vogelsang,John M. Lupton###
(114744, 114744)
 At the single-molecule level, however, straight single chainswith a high degree of emission polarization are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Determining the True Optical Gap in a High-Performance Organic Photovoltaic Polymer Using Single-Molecule Spectroscopy|Gordon J. Hedley,Florian Steiner,Jan Vogelsang,John M. Lupton###
(114786, 114786)
 The PL<missing VAR> is found to be0.4 e<missing VAR>V higher in energy, with a longer lifetime than the red aggregates, andis attributed to single chromophores.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Determining the True Optical Gap in a High-Performance Organic Photovoltaic Polymer Using Single-Molecule Spectroscopy|Gordon J. Hedley,Florian Steiner,Jan Vogelsang,John M. Lupton###
(114801, 114801)
 The PL<missing VAR> is found to be0.4 e<missing VAR>V higher in energy, with a longer lifetime than the red aggregates, andis attributed to single chromophores.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Determining the True Optical Gap in a High-Performance Organic Photovoltaic Polymer Using Single-Molecule Spectroscopy|Gordon J. Hedley,Florian Steiner,Jan Vogelsang,John M. Lupton###
(114862, 114862)
 Our findings indicate that the impressivelight-harvesting abilities of PT<missing VAR>B7 in the red spectral region arises solelyfrom chain aggregation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B7
###Determining the True Optical Gap in a High-Performance Organic Photovoltaic Polymer Using Single-Molecule Spectroscopy|Gordon J. Hedley,Florian Steiner,Jan Vogelsang,John M. Lupton###
(114864, 114865)
 Our findings indicate that the impressivelight-harvesting abilities of PT<missing VAR>B7 in the red spectral region arises solelyfrom chain aggregation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Enhancement of perovskite solar cells by plasmonic nanoparticles|Mikhail Omelyanovich,Sergey Makarov,Valentin Milichko,Constantin Simovski###
(115143, 115143)
 In our work we showthat to cure this shortage is possible complementing the basic structure by aninexpensive plasmonic array.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3, '%', 1]

TiO2
###Large diffusion lengths of excitons in perovskite and ${\it TiO_2}$ heterojunction|Zhyrair Gevorkian,Vladimir Gasparian,Yurii Lozovik###
(115214, 115216)
Large diffusion lengths of excitons in perovskite and it TiO2 heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Large diffusion lengths of excitons in perovskite and ${\it TiO_2}$ heterojunction|Zhyrair Gevorkian,Vladimir Gasparian,Yurii Lozovik###
(115364, 115366)
 The transport mean free path of charged carriers in a perovskite/itTiO2 heterojunction that is an important constituent of the solar cells havebeen analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Do ultrafast exciton-polaron decoherence dynamics govern photocarrier generation efficiencies in polymer solar cells?|E. Vella,H. Li,P. Gregoire,Sachetan M. Tuladhar,Michelle S. Vezie,Sheridan Few,Claudia M. Bazan,Jenny Nelson,Carlos Silva-Acuna,Eric R Bittner###
(115564, 115564)
In such systems the primary dissociation of an optical excitation into a pairof photocarriers has been recently shown to be extremely rapid and efficient,but the physical reason for this remains unclear.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 20, ',', 3]

Cs
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(115879, 115879)
 Hybrid AMX3 perovskites (ACs, CH3NH3; M<missing VAR>Sn, Pb; X<missing VAR>halide) haverevolutionized the scenario of emerging photovoltaic technologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2009, 'by', 1],[68.0, 15, '%', 2]

CH3NH3
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(115882, 115887)
 Hybrid AMX3 perovskites (ACs, CH3NH3; M<missing VAR>Sn, Pb; X<missing VAR>halide) haverevolutionized the scenario of emerging photovoltaic technologies.
Featurization terminated normally.
0.75,0,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2009, 'by', 1],[60.0, 15, '%', 2]

Sn
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(115891, 115891)
 Hybrid AMX3 perovskites (ACs, CH3NH3; M<missing VAR>Sn, Pb; X<missing VAR>halide) haverevolutionized the scenario of emerging photovoltaic technologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2009, 'by', 1],[56.0, 15, '%', 2]

Pb
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(115894, 115894)
 Hybrid AMX3 perovskites (ACs, CH3NH3; M<missing VAR>Sn, Pb; X<missing VAR>halide) haverevolutionized the scenario of emerging photovoltaic technologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2009, 'by', 1],[53.0, 15, '%', 2]

CH3NH3PbI3
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(115958, 115966)
 CH3NH3PbI3 has so far dominated the field, while the similarCH3NH3SnI3 has not been explored for photovoltaic applications, despite thereduced band-gap.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2009, 'by', 2],[11.0, 15, '%', 1]

CH3NH3SnI3
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(115988, 115996)
 CH3NH3PbI3 has so far dominated the field, while the similarCH3NH3SnI3 has not been explored for photovoltaic applications, despite thereduced band-gap.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2009, 'by', 2],[41.0, 15, '%', 1]

Pb
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(116029, 116029)
 Replacement of Pb by the more environment-friendly Sn wouldfacilitate the large uptake of perovskite-based photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2009, 'by', 3],[82.0, 15, '%', 2]

Sn
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(116041, 116041)
 Replacement of Pb by the more environment-friendly Sn wouldfacilitate the large uptake of perovskite-based photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2009, 'by', 3],[94.0, 15, '%', 2]

W
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(116119, 116119)
 Here we developan effective G<missing VAR>W method incorporating spin-orbit coupling which allows us toaccurately model the electronic, optical and transport properties of CH3NH3SnI3and CH3NH3PbI3, opening the way to new materials design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 2009, 'by', 5],[172.0, 15, '%', 4]

CH3NH3SnI3
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(116159, 116167)
 Here we developan effective G<missing VAR>W method incorporating spin-orbit coupling which allows us toaccurately model the electronic, optical and transport properties of CH3NH3SnI3and CH3NH3PbI3, opening the way to new materials design.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2009, 'by', 5],[212.0, 15, '%', 4]

CH3NH3PbI3
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(116172, 116180)
 Here we developan effective G<missing VAR>W method incorporating spin-orbit coupling which allows us toaccurately model the electronic, optical and transport properties of CH3NH3SnI3and CH3NH3PbI3, opening the way to new materials design.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 2009, 'by', 5],[225.0, 15, '%', 4]

CH3NH3SnI3
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(116203, 116211)
 The differentCH3NH3SnI3 and CH3NH3PbI3 properties are discussed in light of theirexploitation for solar cells, and found to be entirely due to relativisticeffects.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 2009, 'by', 6],[256.0, 15, '%', 5]

CH3NH3PbI3
###Relativistic Solar Cells|Paolo Umari,Edoardo Mosconi,Filippo De Angelis###
(116215, 116223)
 The differentCH3NH3SnI3 and CH3NH3PbI3 properties are discussed in light of theirexploitation for solar cells, and found to be entirely due to relativisticeffects.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 2009, 'by', 6],[268.0, 15, '%', 5]

CuGa1-xFe
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116293, 116298)
First-principles analysis of the intermediate band in CuGa1-xFex<missing VAR>S2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

S2
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116300, 116301)
First-principles analysis of the intermediate band in CuGa1-xFex<missing VAR>S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGa1-xFe
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116333, 116338)
 We present a comprehensive study of the electronic, magnetic, and opticalproperties of CuGa1-xFex<missing VAR>S2, as a promising candidate forintermediate-band (IB) solar cells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

S2
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116340, 116341)
 We present a comprehensive study of the electronic, magnetic, and opticalproperties of CuGa1-xFex<missing VAR>S2, as a promising candidate forintermediate-band (IB) solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(IB)
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116359, 116362)
 We present a comprehensive study of the electronic, magnetic, and opticalproperties of CuGa1-xFex<missing VAR>S2, as a promising candidate forintermediate-band (IB) solar cells.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116401, 116401)
 We use hybrid exchange-correlationfunctional within the density functional theory framework, and show that Fedoping induces unoccupied states 1.6-1.9 e<missing VAR>V above the valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116417, 116417)
 We use hybrid exchange-correlationfunctional within the density functional theory framework, and show that Fedoping induces unoccupied states 1.6-1.9 e<missing VAR>V above the valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116430, 116430)
 The IBssignificantly enhance the optical absorption in lower energy part of thespectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IB
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116496, 116497)
 We find that at moderate n<missing VAR>-type co-doping concentration, the addedcharge occupies part of the IB in the gap, but large concentrations lower theenergy of the occupied IB toward the valence band.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IB
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116525, 116526)
 We find that at moderate n<missing VAR>-type co-doping concentration, the addedcharge occupies part of the IB in the gap, but large concentrations lower theenergy of the occupied IB toward the valence band.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116546, 116546)
 Moreover, we show that Feimpurities tend to cluster within the compound and they chooseantiferromagnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IB
###First-principles analysis of the intermediate band in CuGa$_{1-x}$Fe$_x$S$_2$|J. Koskelo,J. Hashemi,S. Huotari,M. Hakala###
(116610, 116611)
 The findings can have a significant effect inunderstanding this material and help to synthesize more efficient IB solarcells.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnSnS3
###ZnSnS3 : Structure Prediction, Ferroelectricity, and Solar Cell Applications|Radi A. Jishi,Marcus A. Lucas###
(116627, 116630)
ZnSnS3  Structure Prediction, Ferroelectricity, and Solar Cell Applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 1.28, 'eV', 7]

ZnSnO3
###ZnSnS3 : Structure Prediction, Ferroelectricity, and Solar Cell Applications|Radi A. Jishi,Marcus A. Lucas###
(116818, 116821)
 Here, weaddress the band gap issue by investigating, in particular, the substitution ofsulphur for oxygen in the perovskite structure ZnSnO3 .
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1.28, 'eV', 3]

ZnSnS3
###ZnSnS3 : Structure Prediction, Ferroelectricity, and Solar Cell Applications|Radi A. Jishi,Marcus A. Lucas###
(116848, 116851)
 Using evolutionarymethods we identify the stable and metastable structures of ZnSnS3 and comparethem to those previously characterized for ZnSnO3 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1.28, 'eV', 2]

ZnSnO3
###ZnSnS3 : Structure Prediction, Ferroelectricity, and Solar Cell Applications|Radi A. Jishi,Marcus A. Lucas###
(116870, 116873)
 Using evolutionarymethods we identify the stable and metastable structures of ZnSnS3 and comparethem to those previously characterized for ZnSnO3 .
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 1.28, 'eV', 2]

ZnSnS3
###ZnSnS3 : Structure Prediction, Ferroelectricity, and Solar Cell Applications|Radi A. Jishi,Marcus A. Lucas###
(116886, 116889)
 Our results suggest thatZnSnS3 forms a monoclinic structure followed by metastable ilmenite andlithium-niobate structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1.28, 'eV', 1]

N
###Suppressing photochemical reactions with quantized light fields|Javier Galego,Francisco J. Garcia-Vidal,Johannes Feist###
(117174, 117174)
, as the primary photochemical event inhuman vision, where it stores electronic energy in the molecular structure, orfor possible applications in solar energy storage and as memories, switches,and actuators; but it can also have detrimental effects, for example as animportant damage pathway under solar irradiation of D<missing VAR>NA, or as a limitingfactor for the efficiency of organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPb
###The impact of the halide cage on the electronic properties of fully inorganic caesium lead halide perovskites|Z. Yang,A. Surrente,K. Galkowski,A. Miyata,O. Portugall,R. J. Sutton,A. A. Haghighirad,H. J. Snaith,D. K. Maude,P. Plochocka,R. J. Nicholas###
(117554, 117555)
 By performing magnetotransmission measurements, we determine with high accuracy the exciton bindingenergy and reduced mass of fully inorganic CsPbX<missing VAR>3 perovskites (X<missing VAR>I, Br, andan alloy of these).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, -270, ',', 1]

I
###The impact of the halide cage on the electronic properties of fully inorganic caesium lead halide perovskites|Z. Yang,A. Surrente,K. Galkowski,A. Miyata,O. Portugall,R. J. Sutton,A. A. Haghighirad,H. J. Snaith,D. K. Maude,P. Plochocka,R. J. Nicholas###
(117563, 117563)
 By performing magnetotransmission measurements, we determine with high accuracy the exciton bindingenergy and reduced mass of fully inorganic CsPbX<missing VAR>3 perovskites (X<missing VAR>I, Br, andan alloy of these).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, -270, ',', 1]

Br
###The impact of the halide cage on the electronic properties of fully inorganic caesium lead halide perovskites|Z. Yang,A. Surrente,K. Galkowski,A. Miyata,O. Portugall,R. J. Sutton,A. A. Haghighirad,H. J. Snaith,D. K. Maude,P. Plochocka,R. J. Nicholas###
(117566, 117566)
 By performing magnetotransmission measurements, we determine with high accuracy the exciton bindingenergy and reduced mass of fully inorganic CsPbX<missing VAR>3 perovskites (X<missing VAR>I, Br, andan alloy of these).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, -270, ',', 1]

K
###The impact of the halide cage on the electronic properties of fully inorganic caesium lead halide perovskites|Z. Yang,A. Surrente,K. Galkowski,A. Miyata,O. Portugall,R. J. Sutton,A. A. Haghighirad,H. J. Snaith,D. K. Maude,P. Plochocka,R. J. Nicholas###
(117617, 117617)
 The well behaved (continuous) evolution of the band gapwith temperature in the range 4-270,K suggests that fully inorganicperovskites do not undergo structural phase transitions like their hybridcounterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, -270, ',', 0]

CuGaO2
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(117776, 117779)
Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaO2
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(117806, 117809)
 Delafossites like CuGaO2 have appeared as promising p<missing VAR>-type semiconductormaterials for opto-electronic applications mainly due to their high opticaltransparency and electrical conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(117900, 117900)
 In this article, we report anovel surfactant-assisted hydrothermal synthesis method, which allows thedevelopment of ultrafine (5 nm) monodispersed p<missing VAR>-type CuGaO2 nanoparticles(NPs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaO2
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(117952, 117955)
 In this article, we report anovel surfactant-assisted hydrothermal synthesis method, which allows thedevelopment of ultrafine (5 nm) monodispersed p<missing VAR>-type CuGaO2 nanoparticles(NPs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(117961, 117961)
 In this article, we report anovel surfactant-assisted hydrothermal synthesis method, which allows thedevelopment of ultrafine (5 nm) monodispersed p<missing VAR>-type CuGaO2 nanoparticles(NPs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(117974, 117975)
 We show that DMSO can be used as a ligand and dispersing solvent forstabilizing the CuGaO2 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaO2
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118002, 118005)
 We show that DMSO can be used as a ligand and dispersing solvent forstabilizing the CuGaO2 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118007, 118007)
 We show that DMSO can be used as a ligand and dispersing solvent forstabilizing the CuGaO2 NPs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaO2
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118037, 118040)
 The resulting dispersion is used for thefabrication of dense, compact functional CuGaO2 electronic layer withproperties relevant to advanced optoelectronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118062, 118062)
 As a proof ofconcept, the surfactant-assisted hydrothermal synthesized CuGaO2 isincorporated as a hole transporting layer (HTL) in the inverted p-i-n<missing VAR>perovskite solar cell device architecture providing improved hole carrierselectivity and power conversion efficiency compared to conventional PEDOT<missing VAR>PSSHTL based perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaO2
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118084, 118087)
 As a proof ofconcept, the surfactant-assisted hydrothermal synthesized CuGaO2 isincorporated as a hole transporting layer (HTL) in the inverted p-i-n<missing VAR>perovskite solar cell device architecture providing improved hole carrierselectivity and power conversion efficiency compared to conventional PEDOT<missing VAR>PSSHTL based perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118105, 118105)
 As a proof ofconcept, the surfactant-assisted hydrothermal synthesized CuGaO2 isincorporated as a hole transporting layer (HTL) in the inverted p-i-n<missing VAR>perovskite solar cell device architecture providing improved hole carrierselectivity and power conversion efficiency compared to conventional PEDOT<missing VAR>PSSHTL based perovskite solar cells.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118158, 118158)
 As a proof ofconcept, the surfactant-assisted hydrothermal synthesized CuGaO2 isincorporated as a hole transporting layer (HTL) in the inverted p-i-n<missing VAR>perovskite solar cell device architecture providing improved hole carrierselectivity and power conversion efficiency compared to conventional PEDOT<missing VAR>PSSHTL based perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118161, 118161)
 As a proof ofconcept, the surfactant-assisted hydrothermal synthesized CuGaO2 isincorporated as a hole transporting layer (HTL) in the inverted p-i-n<missing VAR>perovskite solar cell device architecture providing improved hole carrierselectivity and power conversion efficiency compared to conventional PEDOT<missing VAR>PSSHTL based perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSS
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118163, 118165)
 As a proof ofconcept, the surfactant-assisted hydrothermal synthesized CuGaO2 isincorporated as a hole transporting layer (HTL) in the inverted p-i-n<missing VAR>perovskite solar cell device architecture providing improved hole carrierselectivity and power conversion efficiency compared to conventional PEDOT<missing VAR>PSSHTL based perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells|Ioannis T. Papadas,Achilleas Savva,Apostolos Ioakeimidis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(118168, 118168)
 As a proof ofconcept, the surfactant-assisted hydrothermal synthesized CuGaO2 isincorporated as a hole transporting layer (HTL) in the inverted p-i-n<missing VAR>perovskite solar cell device architecture providing improved hole carrierselectivity and power conversion efficiency compared to conventional PEDOT<missing VAR>PSSHTL based perovskite solar cells.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Application of Genetic Algorithm for More Efficient Multi-Layer Thickness Optimization in Solar Cells|Premkumar Vincent,Gwenaelle Cunha Sergio,Jaewon Jang,In Man Kang,Jaehoon Park,Hyeok Kim,Minho Lee,Jin-Hyuk Bae###
(118485, 118487)
 We have used a well-studied P3HT<missing VAR>-based structure to test ouralgorithm.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 100, '%', 1],[33.0, 60.84, '%', 1]

Ag
###Effective Absorption Enhancement in Small Molecule Organic Solar Cells by Employing Trapezoid Gratings|Xiang Chun-Ping,Liu Jie-Tao,Jin Yu,Xu Bin-Zong,Wang Wei-Min,Wei Xin,Song Guo-Feng,Xu Yun###
(118696, 118696)
The simulated results show that the surface plasmon along the semitransparentmetallic Ag anode is excited by introducing the periodical trapezoid gratings,which induce high intensity field increment in the donor layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Imaging the Long Transport Lengths of Photo-generated Carriers in Oriented Perovskite Films|Shuhao Liu,Lili Wang,Wei-Chun Lin,Sukrit Sucharitakul,Clemens Burda,Xuan. P. A. Gao###
(119070, 119078)
 We fabricated highly oriented crystalline CH3NH3PbI3(M<missing VAR>APbI3) thin film lateral transport devices with long channel length ( 120mum).
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 100, 'nm', 2]

I3
###Imaging the Long Transport Lengths of Photo-generated Carriers in Oriented Perovskite Films|Shuhao Liu,Lili Wang,Wei-Chun Lin,Sukrit Sucharitakul,Clemens Burda,Xuan. P. A. Gao###
(119085, 119086)
 We fabricated highly oriented crystalline CH3NH3PbI3(M<missing VAR>APbI3) thin film lateral transport devices with long channel length ( 120mum).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 100, 'nm', 2]

In
###Magnetic fields: a tool for the study of organic solar cells|S. Oviedo-Casado,A. Urbina,J. Prior###
(119356, 119356)
 In this article we proposestudying the properties and behaviour of organic solar cells through themodification of photocurrent generation when an external magnetic field isapplied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlN
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119619, 119620)
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by R<missing VAR>F sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 1.5, '%', 3]

In
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119636, 119636)
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by R<missing VAR>F sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 1.5, '%', 3]

AlInN
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119640, 119642)
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by R<missing VAR>F sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 1.5, '%', 3]

Si
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119646, 119646)
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by R<missing VAR>F sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 1.5, '%', 3]

F
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119655, 119655)
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by R<missing VAR>F sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 1.5, '%', 3]

AlN
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119672, 119673)
 We report the influence of the AlN interlayer thickness (0-15 nm) on thephotovoltaic properties of Al0.37In0.63N on Si heterojunction solar cellsdeposited by radio frequency sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 1.5, '%', 2]

Al0.37In0.63N
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119698, 119702)
 We report the influence of the AlN interlayer thickness (0-15 nm) on thephotovoltaic properties of Al0.37In0.63N on Si heterojunction solar cellsdeposited by radio frequency sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.185,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.315,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 1.5, '%', 2]

Si
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119706, 119706)
 We report the influence of the AlN interlayer thickness (0-15 nm) on thephotovoltaic properties of Al0.37In0.63N on Si heterojunction solar cellsdeposited by radio frequency sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 1.5, '%', 2]

AlInN
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119788, 119790)
 The poor junction band alignment andthe presence of a 2-3 nm thick amorphous layer at the interface mitigates theresponse in devices fabricated by direct deposition of n<missing VAR>-AlInN on p<missing VAR>-Si(111).
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 1.5, '%', 1]

AlN
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119813, 119814)
Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality andthe interface alignment leading to devices with a conversion efficiency of 1.5%under 1-sun AM1.5G illumination.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1.5, '%', 0]

AlInN
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119824, 119826)
Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality andthe interface alignment leading to devices with a conversion efficiency of 1.5%under 1-sun AM1.5G illumination.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1.5, '%', 0]

AlN
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119902, 119903)
 For thicker buffers the performance lessensdue to inefficient tunnel transport through the AlN.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1.5, '%', 1]

In
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119921, 119921)
 These results demonstratethe feasibility of using In-rich AlInN alloys deposited by radio frequencysputtering as novel electron-selective contacts to Si-heterojunction solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1.5, '%', 2]

AlInN
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119925, 119927)
 These results demonstratethe feasibility of using In-rich AlInN alloys deposited by radio frequencysputtering as novel electron-selective contacts to Si-heterojunction solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.5, '%', 2]

Si
###Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering|S. Valdueza-Felip,A. Núñez-Cascajero,R. Blasco,D. Montero,L. Grenet,M. de la Mata,S. Fernández,L. Rodríguez-De Marcos,S. I. Molina,J. Olea,F. B. Naranjo###
(119954, 119954)
 These results demonstratethe feasibility of using In-rich AlInN alloys deposited by radio frequencysputtering as novel electron-selective contacts to Si-heterojunction solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1.5, '%', 2]

Bi2FeCrO6
###Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling|A. Quattropani,A. S. Makhort,M. V. Rastei,G. Versini,G. Schmerber,S. Barre,A. Dinia,A. Slaoui,J. -L. Rehspringer,T. Fix,S. Colis,B. Kundys###
(119980, 119985)
Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2FeCrO6
###Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling|A. Quattropani,A. S. Makhort,M. V. Rastei,G. Versini,G. Schmerber,S. Barre,A. Dinia,A. Slaoui,J. -L. Rehspringer,T. Fix,S. Colis,B. Kundys###
(120189, 120194)
 Furthermore, we obtain insightinto light induced nonequilibrium charge carrier dynamics in Bi2FeCrO6 filmsinvolving not only charge generation, but also recombination processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling|A. Quattropani,A. S. Makhort,M. V. Rastei,G. Versini,G. Schmerber,S. Barre,A. Dinia,A. Slaoui,J. -L. Rehspringer,T. Fix,S. Colis,B. Kundys###
(120219, 120219)
 At theferroelectric remanence, light is able to electrically depolarize the filmswith remanent and transient effects as evidenced by electrical andpiezoresponse force microscopy (PFM) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PF
###Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling|A. Quattropani,A. S. Makhort,M. V. Rastei,G. Versini,G. Schmerber,S. Barre,A. Dinia,A. Slaoui,J. -L. Rehspringer,T. Fix,S. Colis,B. Kundys###
(120274, 120275)
 At theferroelectric remanence, light is able to electrically depolarize the filmswith remanent and transient effects as evidenced by electrical andpiezoresponse force microscopy (PFM) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Modeling based screening for optimal carrier selective material for Si based solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(120372, 120372)
Modeling based screening for optimal carrier selective material for Si based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 0.2, 'eV', 5]

(CS)
###Modeling based screening for optimal carrier selective material for Si based solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(120385, 120388)
 Carrier selective (CS) silicon solar cells are increasingly explored using avariety of different materials.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0.2, 'eV', 4]

CS
###Modeling based screening for optimal carrier selective material for Si based solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(120429, 120430)
 However, the optimum properties of such CSmaterials are not well understood.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 0.2, 'eV', 3]

In
###Modeling based screening for optimal carrier selective material for Si based solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(120444, 120444)
 In this context, through detailed analyticaland numerical modeling, here we provide several interesting insights on theefficiency tradeoff with CS material properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 0.2, 'eV', 2]

CS
###Modeling based screening for optimal carrier selective material for Si based solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(120488, 120489)
 In this context, through detailed analyticaland numerical modeling, here we provide several interesting insights on theefficiency tradeoff with CS material properties.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.2, 'eV', 2]

V
###Modeling based screening for optimal carrier selective material for Si based solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(120558, 120558)
 Otherwise, a band offset of around 0.2eV-0.4e<missing VAR>V provides sufficientband bending to reduce the effect of interface recombination, thus improvingthe performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.2, 'eV', 0]

CS
###Modeling based screening for optimal carrier selective material for Si based solar cells|Nithin Chatterji,Aldrin Antony,Pradeep R. Nair###
(120666, 120667)
 Additionally, doping density anddielectric constant of CS layers have a similar effect as band offset on solarcell performance.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 0.2, 'eV', 2]

(PSC)
###Ion Induced Passivation of Grain Boundaries in Perovskite Solar Cells|Vikas Nandal,Pradeep R. Nair###
(120817, 120821)
 Demonstration of high-efficiency large area cells with excellent stability isan important requirement towards commercialization of perovskite solar cells(PSC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Ion Induced Passivation of Grain Boundaries in Perovskite Solar Cells|Vikas Nandal,Pradeep R. Nair###
(120935, 120937)
 Here,we develop a modeling framework to address performance limitation due to G<missing VAR>Bs inlarge area PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Ion Induced Passivation of Grain Boundaries in Perovskite Solar Cells|Vikas Nandal,Pradeep R. Nair###
(121056, 121056)
 Interestingly, we find that ions at G<missing VAR>Bs lead to significant performancerecovery through field effect passivation, which is influenced by criticalparameters like density and polarity of ions, and the location of G<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Ion Induced Passivation of Grain Boundaries in Perovskite Solar Cells|Vikas Nandal,Pradeep R. Nair###
(121118, 121120)
 Theseresults have interesting implications towards long-term stability and hence arerelevant for the performance optimization of large area polycrystalline basedthin film solar cells such as PSCs, CIG<missing VAR>S, CZTS, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Ion Induced Passivation of Grain Boundaries in Perovskite Solar Cells|Vikas Nandal,Pradeep R. Nair###
(121123, 121124)
 Theseresults have interesting implications towards long-term stability and hence arerelevant for the performance optimization of large area polycrystalline basedthin film solar cells such as PSCs, CIG<missing VAR>S, CZTS, etc.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Ion Induced Passivation of Grain Boundaries in Perovskite Solar Cells|Vikas Nandal,Pradeep R. Nair###
(121126, 121126)
 Theseresults have interesting implications towards long-term stability and hence arerelevant for the performance optimization of large area polycrystalline basedthin film solar cells such as PSCs, CIG<missing VAR>S, CZTS, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ion Induced Passivation of Grain Boundaries in Perovskite Solar Cells|Vikas Nandal,Pradeep R. Nair###
(121129, 121129)
 Theseresults have interesting implications towards long-term stability and hence arerelevant for the performance optimization of large area polycrystalline basedthin film solar cells such as PSCs, CIG<missing VAR>S, CZTS, etc.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Ion Induced Passivation of Grain Boundaries in Perovskite Solar Cells|Vikas Nandal,Pradeep R. Nair###
(121132, 121132)
 Theseresults have interesting implications towards long-term stability and hence arerelevant for the performance optimization of large area polycrystalline basedthin film solar cells such as PSCs, CIG<missing VAR>S, CZTS, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Detailed Performance Loss Analysis of Silicon Solar Cells using High-Throughput Metrology Methods|Mohammad Jobayer Hossain,Geoffrey Gregory,Hardik Patel,Siyu Guo,Eric J. Schneller,Andrew M. Gabor,Zhihao Yang,Adrienne L. Blum,Kristopher O. Davis###
(121173, 121173)
 In this work, novel, high-throughput metrology methods are used to perform adetailed performance loss analysis of approximately 400 industrial crystallinesilicon solar cells, all coming from the same production line.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 400, 'industrial', 0]

VOC
###Detailed Performance Loss Analysis of Silicon Solar Cells using High-Throughput Metrology Methods|Mohammad Jobayer Hossain,Geoffrey Gregory,Hardik Patel,Siyu Guo,Eric J. Schneller,Andrew M. Gabor,Zhihao Yang,Adrienne L. Blum,Kristopher O. Davis###
(121347, 121349)
 More traditionalmeasurements, like illuminated current-voltage, Suns-VOC, and photoluminescenceimaging are also used to carry out the loss analysis.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 400, 'industrial', 3]

HB
###Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells|Pablo G. Linares,Elisa Antolín,Antonio Martí###
(121593, 121594)
 Practical device architectures are proposed here for the implementation ofthree-terminal heterojunction bipolar transistor solar cells (3T<missing VAR>-HBT<missing VAR>SCs).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells|Pablo G. Linares,Elisa Antolín,Antonio Martí###
(121597, 121597)
 Practical device architectures are proposed here for the implementation ofthree-terminal heterojunction bipolar transistor solar cells (3T<missing VAR>-HBT<missing VAR>SCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells|Pablo G. Linares,Elisa Antolín,Antonio Martí###
(121661, 121661)
 In addition, thesimplified n-p-n<missing VAR> (or p-n-p) structure does not require the use of tunneljunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells|Pablo G. Linares,Elisa Antolín,Antonio Martí###
(121707, 121707)
 In this framework, four architectures are proposed and discussed inthis paper 1) one in which the top cell is based on silicon and the bottomcell is based on a heterojunction between silicon and III-V nanomaterials; 2)one in which the top cell is made of amorphous silicon and the bottom cell ismade of an amorphous silicon-silicon heterojunction; 3) one based on the use ofIII-V semiconductors aimed at space applications; and 4) one in which the topcell is based on a perovskite material and the bottom cell is made of aperovskite-silicon heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells|Pablo G. Linares,Elisa Antolín,Antonio Martí###
(121781, 121783)
 In this framework, four architectures are proposed and discussed inthis paper 1) one in which the top cell is based on silicon and the bottomcell is based on a heterojunction between silicon and III-V nanomaterials; 2)one in which the top cell is made of amorphous silicon and the bottom cell ismade of an amorphous silicon-silicon heterojunction; 3) one based on the use ofIII-V semiconductors aimed at space applications; and 4) one in which the topcell is based on a perovskite material and the bottom cell is made of aperovskite-silicon heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells|Pablo G. Linares,Elisa Antolín,Antonio Martí###
(121785, 121785)
 In this framework, four architectures are proposed and discussed inthis paper 1) one in which the top cell is based on silicon and the bottomcell is based on a heterojunction between silicon and III-V nanomaterials; 2)one in which the top cell is made of amorphous silicon and the bottom cell ismade of an amorphous silicon-silicon heterojunction; 3) one based on the use ofIII-V semiconductors aimed at space applications; and 4) one in which the topcell is based on a perovskite material and the bottom cell is made of aperovskite-silicon heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells|Pablo G. Linares,Elisa Antolín,Antonio Martí###
(121858, 121860)
 In this framework, four architectures are proposed and discussed inthis paper 1) one in which the top cell is based on silicon and the bottomcell is based on a heterojunction between silicon and III-V nanomaterials; 2)one in which the top cell is made of amorphous silicon and the bottom cell ismade of an amorphous silicon-silicon heterojunction; 3) one based on the use ofIII-V semiconductors aimed at space applications; and 4) one in which the topcell is based on a perovskite material and the bottom cell is made of aperovskite-silicon heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells|Pablo G. Linares,Elisa Antolín,Antonio Martí###
(121862, 121862)
 In this framework, four architectures are proposed and discussed inthis paper 1) one in which the top cell is based on silicon and the bottomcell is based on a heterojunction between silicon and III-V nanomaterials; 2)one in which the top cell is made of amorphous silicon and the bottom cell ismade of an amorphous silicon-silicon heterojunction; 3) one based on the use ofIII-V semiconductors aimed at space applications; and 4) one in which the topcell is based on a perovskite material and the bottom cell is made of aperovskite-silicon heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Advanced material system for the design of an intermediate band solar cell: type-II CdTe quantum dots in a ZnCdSe matrix|V. Deligiannakis,G. Ranepura,I. L. Kuskovsky,M. C. Tamargo###
(121963, 121964)
Advanced material system for the design of an intermediate band solar cell type-II CdTe quantum dots in a ZnCdSe matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 100, 'periods', 3]

CdTe
###Advanced material system for the design of an intermediate band solar cell: type-II CdTe quantum dots in a ZnCdSe matrix|V. Deligiannakis,G. Ranepura,I. L. Kuskovsky,M. C. Tamargo###
(121966, 121967)
Advanced material system for the design of an intermediate band solar cell type-II CdTe quantum dots in a ZnCdSe matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 100, 'periods', 3]

ZnCdSe
###Advanced material system for the design of an intermediate band solar cell: type-II CdTe quantum dots in a ZnCdSe matrix|V. Deligiannakis,G. Ranepura,I. L. Kuskovsky,M. C. Tamargo###
(121977, 121979)
Advanced material system for the design of an intermediate band solar cell type-II CdTe quantum dots in a ZnCdSe matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 100, 'periods', 3]

CdTe
###Advanced material system for the design of an intermediate band solar cell: type-II CdTe quantum dots in a ZnCdSe matrix|V. Deligiannakis,G. Ranepura,I. L. Kuskovsky,M. C. Tamargo###
(121988, 121989)
 We explore CdTe fractional monolayer quantum dots (Q<missing VAR>Ds) in a ZnCdSe hostmatrix for potential application in an intermediate band solar cell device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 100, 'periods', 2]

Ds
###Advanced material system for the design of an intermediate band solar cell: type-II CdTe quantum dots in a ZnCdSe matrix|V. Deligiannakis,G. Ranepura,I. L. Kuskovsky,M. C. Tamargo###
(122001, 122001)
 We explore CdTe fractional monolayer quantum dots (Q<missing VAR>Ds) in a ZnCdSe hostmatrix for potential application in an intermediate band solar cell device.
EXCEPTION 3: IndexError for Ds
ZnCdSe
[135.0, 100, 'periods', 2]

Fe2O3
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122365, 122368)
 Solution processed gamma-Fe2O3 nanoparticles via the solvothermalcolloidal synthesis in conjunction with ligand-exchange method are used forinterface modification of the top electrode in inverted perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122426, 122426)
In comparison to more conventional top electrodes such as PC(70)BM<missing VAR>/Al andPC(70)BM<missing VAR>/AZ<missing VAR>O/Al, we show that incorporation of a gamma-Fe2O3 provides analternative solution processed top electrode (PC(70)BM<missing VAR>/gamma-Fe2O3/Al) thatnot only results in comparable power conversion efficiencies but also improvedthermal stability of inverted perovskite photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122449, 122449)
In comparison to more conventional top electrodes such as PC(70)BM<missing VAR>/Al andPC(70)BM<missing VAR>/AZ<missing VAR>O/Al, we show that incorporation of a gamma-Fe2O3 provides analternative solution processed top electrode (PC(70)BM<missing VAR>/gamma-Fe2O3/Al) thatnot only results in comparable power conversion efficiencies but also improvedthermal stability of inverted perovskite photovoltaics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122452, 122452)
In comparison to more conventional top electrodes such as PC(70)BM<missing VAR>/Al andPC(70)BM<missing VAR>/AZ<missing VAR>O/Al, we show that incorporation of a gamma-Fe2O3 provides analternative solution processed top electrode (PC(70)BM<missing VAR>/gamma-Fe2O3/Al) thatnot only results in comparable power conversion efficiencies but also improvedthermal stability of inverted perovskite photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122462, 122462)
In comparison to more conventional top electrodes such as PC(70)BM<missing VAR>/Al andPC(70)BM<missing VAR>/AZ<missing VAR>O/Al, we show that incorporation of a gamma-Fe2O3 provides analternative solution processed top electrode (PC(70)BM<missing VAR>/gamma-Fe2O3/Al) thatnot only results in comparable power conversion efficiencies but also improvedthermal stability of inverted perovskite photovoltaics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/Al
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122467, 122469)
In comparison to more conventional top electrodes such as PC(70)BM<missing VAR>/Al andPC(70)BM<missing VAR>/AZ<missing VAR>O/Al, we show that incorporation of a gamma-Fe2O3 provides analternative solution processed top electrode (PC(70)BM<missing VAR>/gamma-Fe2O3/Al) thatnot only results in comparable power conversion efficiencies but also improvedthermal stability of inverted perovskite photovoltaics.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe2O3
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122486, 122489)
In comparison to more conventional top electrodes such as PC(70)BM<missing VAR>/Al andPC(70)BM<missing VAR>/AZ<missing VAR>O/Al, we show that incorporation of a gamma-Fe2O3 provides analternative solution processed top electrode (PC(70)BM<missing VAR>/gamma-Fe2O3/Al) thatnot only results in comparable power conversion efficiencies but also improvedthermal stability of inverted perovskite photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122512, 122512)
In comparison to more conventional top electrodes such as PC(70)BM<missing VAR>/Al andPC(70)BM<missing VAR>/AZ<missing VAR>O/Al, we show that incorporation of a gamma-Fe2O3 provides analternative solution processed top electrode (PC(70)BM<missing VAR>/gamma-Fe2O3/Al) thatnot only results in comparable power conversion efficiencies but also improvedthermal stability of inverted perovskite photovoltaics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122522, 122522)
In comparison to more conventional top electrodes such as PC(70)BM<missing VAR>/Al andPC(70)BM<missing VAR>/AZ<missing VAR>O/Al, we show that incorporation of a gamma-Fe2O3 provides analternative solution processed top electrode (PC(70)BM<missing VAR>/gamma-Fe2O3/Al) thatnot only results in comparable power conversion efficiencies but also improvedthermal stability of inverted perovskite photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122592, 122592)
 The origin of improvedstability of inverted perovskite solar cells incorporating PC(70)BM<missing VAR>/gamma-Fe2O3/Al under accelerated heat lifetime conditions is attributed tothe acidic surface nature of gamma-Fe2O3 and reduced charge trapped densitywithin PC(70)BM<missing VAR>/ gamma-Fe2O3/Al top electrode interfaces.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3/Al
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122599, 122604)
 The origin of improvedstability of inverted perovskite solar cells incorporating PC(70)BM<missing VAR>/gamma-Fe2O3/Al under accelerated heat lifetime conditions is attributed tothe acidic surface nature of gamma-Fe2O3 and reduced charge trapped densitywithin PC(70)BM<missing VAR>/ gamma-Fe2O3/Al top electrode interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe2O3
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122635, 122638)
 The origin of improvedstability of inverted perovskite solar cells incorporating PC(70)BM<missing VAR>/gamma-Fe2O3/Al under accelerated heat lifetime conditions is attributed tothe acidic surface nature of gamma-Fe2O3 and reduced charge trapped densitywithin PC(70)BM<missing VAR>/ gamma-Fe2O3/Al top electrode interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122658, 122658)
 The origin of improvedstability of inverted perovskite solar cells incorporating PC(70)BM<missing VAR>/gamma-Fe2O3/Al under accelerated heat lifetime conditions is attributed tothe acidic surface nature of gamma-Fe2O3 and reduced charge trapped densitywithin PC(70)BM<missing VAR>/ gamma-Fe2O3/Al top electrode interfaces.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3/Al
###Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics|Ioannis T. Papadas,Fedros Galatopoulos,Gerasimos S. Armatas,Nir Tessler,Stelios A. Choulis###
(122664, 122669)
 The origin of improvedstability of inverted perovskite solar cells incorporating PC(70)BM<missing VAR>/gamma-Fe2O3/Al under accelerated heat lifetime conditions is attributed tothe acidic surface nature of gamma-Fe2O3 and reduced charge trapped densitywithin PC(70)BM<missing VAR>/ gamma-Fe2O3/Al top electrode interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(HOP)
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(122719, 122723)
 Hybrid organolead perovskites (HOP) have started to establish themselves inthe field of photovoltaics, mainly due to their great optoelectronic propertiesand steadily improving solar cell efficiency.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HOP
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(122851, 122853)
 Here, we investigate, via neutron and Raman spectroscopies,the optical phonon spectrum of four different HOP single crystals M<missing VAR>APbBr3,FAPbBr3, M<missing VAR>APbI3, and alpha-FAPbI3.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbBr3
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(122861, 122863)
 Here, we investigate, via neutron and Raman spectroscopies,the optical phonon spectrum of four different HOP single crystals M<missing VAR>APbBr3,FAPbBr3, M<missing VAR>APbI3, and alpha-FAPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(122867, 122867)
 Here, we investigate, via neutron and Raman spectroscopies,the optical phonon spectrum of four different HOP single crystals M<missing VAR>APbBr3,FAPbBr3, M<missing VAR>APbI3, and alpha-FAPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbBr3
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(122869, 122871)
 Here, we investigate, via neutron and Raman spectroscopies,the optical phonon spectrum of four different HOP single crystals M<missing VAR>APbBr3,FAPbBr3, M<missing VAR>APbI3, and alpha-FAPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(122876, 122878)
 Here, we investigate, via neutron and Raman spectroscopies,the optical phonon spectrum of four different HOP single crystals M<missing VAR>APbBr3,FAPbBr3, M<missing VAR>APbI3, and alpha-FAPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(122885, 122885)
 Here, we investigate, via neutron and Raman spectroscopies,the optical phonon spectrum of four different HOP single crystals M<missing VAR>APbBr3,FAPbBr3, M<missing VAR>APbI3, and alpha-FAPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(122887, 122889)
 Here, we investigate, via neutron and Raman spectroscopies,the optical phonon spectrum of four different HOP single crystals M<missing VAR>APbBr3,FAPbBr3, M<missing VAR>APbI3, and alpha-FAPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(122924, 122924)
 Low temperature spectra revealweakly dispersive optical phonons, at energies as low as 2-5meV, which seem tobe the origin of the limit of the charge carriers mobilities in thesematerials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Direct evidence of weakly dispersed and strongly anharmonic optical phonons in hybrid perovskites|A. C. Ferreira,S. Paofai,A. Létoublon,J. Ollivier,S. Raymond,B. Hehlen,B. Rufflé,S. Cordier,C. Katan,J. Even,P. Bourges###
(123016, 123016)
 The temperature dependence of our neutron spectra shows as well asignificant anharmonic behaviour, resulting in optical phonon overdamping attemperatures as low as 80K, questionning the validity of the quasi-particlepicture for the low energy optical modes at room temperature where the solarcells operate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123074, 123074)
Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 4, 'at', 5],[289.0, 1.78, 'to', 5],[290.0, 1.51, 'eV', 5],[312.0, 32, '%', 5]

BaZrS3
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123080, 123083)
Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 4, 'at', 5],[280.0, 1.78, 'to', 5],[281.0, 1.51, 'eV', 5],[303.0, 32, '%', 5]

BaZrS3
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123094, 123097)
 BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess adirect band gap, an exceptionally strong near band edge light absorption, andgood carrier transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 4, 'at', 4],[266.0, 1.78, 'to', 4],[267.0, 1.51, 'eV', 4],[289.0, 32, '%', 4]

V
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123229, 123229)
 However, its reported band gap in the range of 1.7-1.8 e<missing VAR>V is larger thanthe optimal value required to reach the Shockley-Queisser limit of a singlejunction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 4, 'at', 2],[134.0, 1.78, 'to', 2],[135.0, 1.51, 'eV', 2],[157.0, 32, '%', 2]

Ba
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123284, 123284)
 Here we report the synthesis of Ba(Zr1-xTix)S3 perovskitecompounds with a reduced band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 4, 'at', 1],[79.0, 1.78, 'to', 1],[80.0, 1.51, 'eV', 1],[102.0, 32, '%', 1]

Zr1-x
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123286, 123289)
 Here we report the synthesis of Ba(Zr1-xTix)S3 perovskitecompounds with a reduced band gap.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[59.0, 4, 'at', 1],[74.0, 1.78, 'to', 1],[75.0, 1.51, 'eV', 1],[97.0, 32, '%', 1]

S3
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123292, 123293)
 Here we report the synthesis of Ba(Zr1-xTix)S3 perovskitecompounds with a reduced band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 4, 'at', 1],[70.0, 1.78, 'to', 1],[71.0, 1.51, 'eV', 1],[93.0, 32, '%', 1]

Ti
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123319, 123319)
 It is found that Ti alloying is extremelyeffective in band gap reduction of BaZrS3 a mere 4 at% alloying decreases theband gap from 1.78 to 1.51 eV, resulting in a theoretical maximum powerconversion efficiency of 32%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 4, 'at', 0],[44.0, 1.78, 'to', 0],[45.0, 1.51, 'eV', 0],[67.0, 32, '%', 0]

BaZrS3
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123340, 123343)
 It is found that Ti alloying is extremelyeffective in band gap reduction of BaZrS3 a mere 4 at% alloying decreases theband gap from 1.78 to 1.51 eV, resulting in a theoretical maximum powerconversion efficiency of 32%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 4, 'at', 0],[20.0, 1.78, 'to', 0],[21.0, 1.51, 'eV', 0],[43.0, 32, '%', 0]

Ti
###Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics|Xiucheng Wei,Haolei Hui,Samanthe Perera,Aaron Sheng,David F. Watson,Yi-Yang Sun,Quanxi Jia,Shengbai Zhang,Hao Zeng###
(123392, 123392)
 Higher Ti-alloying concentration is found todestabilize the distorted chalcogenide perovskite phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 4, 'at', 1],[29.0, 1.78, 'to', 1],[28.0, 1.51, 'eV', 1],[6.0, 32, '%', 1]

Si
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123454, 123454)
Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si The case of CZTS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 1.06, 'V', 5],[298.0, 3.9, '%', 5]

C
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123462, 123462)
Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si The case of CZTS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 1.06, 'V', 5],[290.0, 3.9, '%', 5]

S
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123465, 123465)
Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si The case of CZTS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 1.06, 'V', 5],[287.0, 3.9, '%', 5]

Si
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123546, 123546)
However, this can be challenging when it involves high-temperature reactiveprocesses, which would risk damaging the Si bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 1.06, 'V', 3],[206.0, 3.9, '%', 3]

Cu2ZnSnS4
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123594, 123599)
 One such case is thehigh-temperature sulfurization/selenization in thin film chalcogenide solarcells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 1.06, 'V', 2],[153.0, 3.9, '%', 2]

C
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123602, 123602)
 One such case is thehigh-temperature sulfurization/selenization in thin film chalcogenide solarcells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1.06, 'V', 2],[150.0, 3.9, '%', 2]

S
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123605, 123605)
 One such case is thehigh-temperature sulfurization/selenization in thin film chalcogenide solarcells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1.06, 'V', 2],[147.0, 3.9, '%', 2]

TiN
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123634, 123635)
 Here, by usingvery thin (<10 nm) TiN-based diffusion barriers at the interface, withdifferent composition and properties, we demonstrate on a device level that theprotection of the Si bottom cell is largely dependent on the barrier layerengineering.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1.06, 'V', 1],[117.0, 3.9, '%', 1]

Si
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123685, 123685)
 Here, by usingvery thin (<10 nm) TiN-based diffusion barriers at the interface, withdifferent composition and properties, we demonstrate on a device level that theprotection of the Si bottom cell is largely dependent on the barrier layerengineering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 1.06, 'V', 1],[67.0, 3.9, '%', 1]

C
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123713, 123713)
 Several monolithic CZTS/Si tandem solar cells with open-circuitvoltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved,indicating a performance comparable to conventional interfacial layers based ontransparent conductive oxides, and pointing to a promising alternative designin solar energy conversion devices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1.06, 'V', 0],[39.0, 3.9, '%', 0]

S/Si
###Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS|Filipe Martinho,Alireza Hajijafarassar,Simón Lopez-Marino,Moises Espíndola-Rodríguez,Sara Engberg,Mungunshagai Gansukh,Fredrik Stulen,Sigbjørn Grini,Stela Canulescu,Eugen Stamate,Andrea Crovetto,Lasse Vines,Jørgen Schou,Ole Hansen###
(123716, 123718)
 Several monolithic CZTS/Si tandem solar cells with open-circuitvoltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved,indicating a performance comparable to conventional interfacial layers based ontransparent conductive oxides, and pointing to a promising alternative designin solar energy conversion devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[24.0, 1.06, 'V', 0],[34.0, 3.9, '%', 0]

PV
###Computational Simulation and Analysis of Major Control Parameters of Time-Dependent PV/T Collectors|Jimeng Shi,Cheng-Xian Lin###
(123845, 123846)
Computational Simulation and Analysis of Major Control Parameters of Time-Dependent PV/T<missing VAR> Collectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 1, 'hour', 4]

In
###Computational Simulation and Analysis of Major Control Parameters of Time-Dependent PV/T Collectors|Jimeng Shi,Cheng-Xian Lin###
(123853, 123853)
 In order to improve performance of photovoltaic/thermal (or PV/T<missing VAR> forsimplicity) collectors, this paper firstly validated a previous computationalthermal model and then introduced an improved computational thermal model toinvestigate the effects of the major control parameters on the thermalperformance of PV/T<missing VAR> collectors, including solar cell temperature, back surfacetemperature, and outlet water temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 1, 'hour', 3]

PV
###Computational Simulation and Analysis of Major Control Parameters of Time-Dependent PV/T Collectors|Jimeng Shi,Cheng-Xian Lin###
(123872, 123873)
 In order to improve performance of photovoltaic/thermal (or PV/T<missing VAR> forsimplicity) collectors, this paper firstly validated a previous computationalthermal model and then introduced an improved computational thermal model toinvestigate the effects of the major control parameters on the thermalperformance of PV/T<missing VAR> collectors, including solar cell temperature, back surfacetemperature, and outlet water temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 1, 'hour', 3]

PV
###Computational Simulation and Analysis of Major Control Parameters of Time-Dependent PV/T Collectors|Jimeng Shi,Cheng-Xian Lin###
(123951, 123952)
 In order to improve performance of photovoltaic/thermal (or PV/T<missing VAR> forsimplicity) collectors, this paper firstly validated a previous computationalthermal model and then introduced an improved computational thermal model toinvestigate the effects of the major control parameters on the thermalperformance of PV/T<missing VAR> collectors, including solar cell temperature, back surfacetemperature, and outlet water temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 1, 'hour', 3]

PV
###Computational Simulation and Analysis of Major Control Parameters of Time-Dependent PV/T Collectors|Jimeng Shi,Cheng-Xian Lin###
(123999, 124000)
 Besides, a computational electricalmodel of PV/T<missing VAR> system was also introduced to elaborate the relationship ofvoltage, current and power of a PV module (MSX60 polycrystalline solar cell)used in an experiment in the literature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 1, 'hour', 2]

PV
###Computational Simulation and Analysis of Major Control Parameters of Time-Dependent PV/T Collectors|Jimeng Shi,Cheng-Xian Lin###
(124036, 124037)
 Besides, a computational electricalmodel of PV/T<missing VAR> system was also introduced to elaborate the relationship ofvoltage, current and power of a PV module (MSX60 polycrystalline solar cell)used in an experiment in the literature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, 'hour', 2]

At
###Computational Simulation and Analysis of Major Control Parameters of Time-Dependent PV/T Collectors|Jimeng Shi,Cheng-Xian Lin###
(124133, 124133)
 At last, severalsuggestions to improve the efficiency of PV/T<missing VAR> system were illustrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1, 'hour', 1]

PV
###Computational Simulation and Analysis of Major Control Parameters of Time-Dependent PV/T Collectors|Jimeng Shi,Cheng-Xian Lin###
(124153, 124154)
 At last, severalsuggestions to improve the efficiency of PV/T<missing VAR> system were illustrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1, 'hour', 1]

V
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124235, 124235)
 Among the parameters determining the efficiency of an organic solar cell, theopen-circuit voltage (VtextOC) is the one with most room for improvement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124238, 124238)
 Among the parameters determining the efficiency of an organic solar cell, theopen-circuit voltage (VtextOC) is the one with most room for improvement.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124271, 124271)
Existing models for the description of VtextOC assume that photogeneratedcharge carriers are thermalized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OC
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124273, 124274)
Existing models for the description of VtextOC assume that photogeneratedcharge carriers are thermalized.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124314, 124314)
 Here, we demonstrate that quasi-equilibriumconcepts cannot fully describe VtextOC of disordered organic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OC
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124316, 124317)
 Here, we demonstrate that quasi-equilibriumconcepts cannot fully describe VtextOC of disordered organic devices.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124348, 124348)
 Fortwo representative donoracceptor blends it is shown that VtextOC isactually 0.1-0.2 V higher than it would be if the system was in thermodynamicequilibrium.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OC
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124350, 124351)
 Fortwo representative donoracceptor blends it is shown that VtextOC isactually 0.1-0.2 V higher than it would be if the system was in thermodynamicequilibrium.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124362, 124362)
 Fortwo representative donoracceptor blends it is shown that VtextOC isactually 0.1-0.2 V higher than it would be if the system was in thermodynamicequilibrium.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124492, 124492)
 These findings indicate that organic solar cells work as nonequilibriumdevices, in which part of the photon excess energy is harvested in the form ofan enhanced VtextOC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OC
###Slow Relaxation of Photogenerated Charge Carriers Boosts Open-Circuit Voltage of Organic Solar Cells|Tanvi Upreti,Sebastian Wilken,Huotian Zhang,Martijn Kemerink###
(124494, 124495)
 These findings indicate that organic solar cells work as nonequilibriumdevices, in which part of the photon excess energy is harvested in the form ofan enhanced VtextOC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Understanding the Effect of Lead Iodide Excess on the Performance of Methylammonium Lead Iodide Perovskite Solar Cells|Zeeshan Ahmad,Rebecca A. Scheidt,Matthew P. Hautzinger,Kai Zhu,Matthew C. Beard,Giulia Galli###
(124655, 124655)
 We show how type I and IIband alignments arising under different conditions result in either passivationof surface defects or hole injection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Understanding the Effect of Lead Iodide Excess on the Performance of Methylammonium Lead Iodide Perovskite Solar Cells|Zeeshan Ahmad,Rebecca A. Scheidt,Matthew P. Hautzinger,Kai Zhu,Matthew C. Beard,Giulia Galli###
(124659, 124660)
 We show how type I and IIband alignments arising under different conditions result in either passivationof surface defects or hole injection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Programmable Charge Trap for Junction-less selective extraction of holes in Solar Cells|Swasti Bhatia,Aldrin Antony,Pradeep R. Nair###
(124972, 124972)
 In this context, here we propose anew paradigm for selective extraction for majority carriers through novel usageof the programmable charge trap which comprises of Oxide-Nitride-Oxide (ONO)stack and has the primary function of holding electrically injected charge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(ONO)
###Programmable Charge Trap for Junction-less selective extraction of holes in Solar Cells|Swasti Bhatia,Aldrin Antony,Pradeep R. Nair###
(125033, 125037)
 In this context, here we propose anew paradigm for selective extraction for majority carriers through novel usageof the programmable charge trap which comprises of Oxide-Nitride-Oxide (ONO)stack and has the primary function of holding electrically injected charge.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Characterizing the Influence of Charge Extraction Layers on the Performance of Triple-Cation Perovskite Solar Cells|Johanna Siekmann,Ashish Kulkarni,Samah Akel,Benjamin Klingebiel,Michael Saliba,Uwe Rau,Thomas Kirchartz###
(125711, 125711)
 In this work, high-qualityperovskite thin films and devices are fabricated with different fullerene-basedelectron transport layers and different self-assembled monolayers as holetransport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Characterizing the Influence of Charge Extraction Layers on the Performance of Triple-Cation Perovskite Solar Cells|Johanna Siekmann,Ashish Kulkarni,Samah Akel,Benjamin Klingebiel,Michael Saliba,Uwe Rau,Thomas Kirchartz###
(125850, 125850)
 In addition, we highlight thelimitations and problems of the different measurements, the insights gained bycombining different methods and the different strategies to extract informationfrom the experimental raw data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs/InGaAs
###Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells|Tingyi Gu,Mohamed A. El-Emawy,Kai Yang,Andreas Stintz,Luke F. Lester###
(125936, 125941)
Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[327.0, 0.914, 'V', 5],[331.0, 8.85, '%', 5],[336.0, 0.834, 'V', 5],[340.0, 7.41, '%', 5],[367.0, 2, ',', 5],[380.0, 0.665, 'V', 5],[384.0, 7.04, '%', 5],[388.0, 0.675, 'V', 5],[392.0, 8.17, '%', 5]

InAs/InGaAs
###Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells|Tingyi Gu,Mohamed A. El-Emawy,Kai Yang,Andreas Stintz,Luke F. Lester###
(125956, 125961)
 The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diodestructure with six layers of InAs Q<missing VAR>Ds embedded in InGaAs quantum wells placedwithin a 200-nm intrinsic GaAs region.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[307.0, 0.914, 'V', 4],[311.0, 8.85, '%', 4],[316.0, 0.834, 'V', 4],[320.0, 7.41, '%', 4],[347.0, 2, ',', 4],[360.0, 0.665, 'V', 4],[364.0, 7.04, '%', 4],[368.0, 0.675, 'V', 4],[372.0, 8.17, '%', 4]

InAs
###Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells|Tingyi Gu,Mohamed A. El-Emawy,Kai Yang,Andreas Stintz,Luke F. Lester###
(126002, 126003)
 The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diodestructure with six layers of InAs Q<missing VAR>Ds embedded in InGaAs quantum wells placedwithin a 200-nm intrinsic GaAs region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 0.914, 'V', 4],[269.0, 8.85, '%', 4],[274.0, 0.834, 'V', 4],[278.0, 7.41, '%', 4],[305.0, 2, ',', 4],[318.0, 0.665, 'V', 4],[322.0, 7.04, '%', 4],[326.0, 0.675, 'V', 4],[330.0, 8.17, '%', 4]

Ds
###Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells|Tingyi Gu,Mohamed A. El-Emawy,Kai Yang,Andreas Stintz,Luke F. Lester###
(126006, 126006)
 The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diodestructure with six layers of InAs Q<missing VAR>Ds embedded in InGaAs quantum wells placedwithin a 200-nm intrinsic GaAs region.
EXCEPTION 3: IndexError for Ds
InGaAs
[262.0, 0.914, 'V', 4],[266.0, 8.85, '%', 4],[271.0, 0.834, 'V', 4],[275.0, 7.41, '%', 4],[302.0, 2, ',', 4],[315.0, 0.665, 'V', 4],[319.0, 7.04, '%', 4],[323.0, 0.675, 'V', 4],[327.0, 8.17, '%', 4]

GaAs
###Role of photon recycling in perovskite solar cells|Mohammad Ryyan Khan,Xufeng Wang,Reza Asadpour,Mark Lundstrom,Muhammad A. Alam###
(126391, 126392)
 Nearly perfect photon recycling helped GaAs cells achieve the highestefficiency ever reported for a solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 96, '%', 6]

GaAs
###Role of photon recycling in perovskite solar cells|Mohammad Ryyan Khan,Xufeng Wang,Reza Asadpour,Mark Lundstrom,Muhammad A. Alam###
(126458, 126459)
 Recent reports of photon recyclingin perovskite solar cells suggest that, once optimized, it may as well achieveGaAs-like performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 96, '%', 5]

In
###Role of photon recycling in perovskite solar cells|Mohammad Ryyan Khan,Xufeng Wang,Reza Asadpour,Mark Lundstrom,Muhammad A. Alam###
(126466, 126466)
 In this paper, we show that GaAs and perovskite cellsrecycle photons in different ways.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 96, '%', 4]

GaAs
###Role of photon recycling in perovskite solar cells|Mohammad Ryyan Khan,Xufeng Wang,Reza Asadpour,Mark Lundstrom,Muhammad A. Alam###
(126479, 126480)
 In this paper, we show that GaAs and perovskite cellsrecycle photons in different ways.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 96, '%', 4]

GaAs
###Role of photon recycling in perovskite solar cells|Mohammad Ryyan Khan,Xufeng Wang,Reza Asadpour,Mark Lundstrom,Muhammad A. Alam###
(126575, 126576)
 GaAs cells have no such limitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 96, '%', 2]

GaAs
###Role of photon recycling in perovskite solar cells|Mohammad Ryyan Khan,Xufeng Wang,Reza Asadpour,Mark Lundstrom,Muhammad A. Alam###
(126711, 126712)
 The mirror reflectivity restriction wasfar more relaxed for the thicker (2-3um) GaAs cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 96, '%', 1]

In
###A Microscopic Perspective on Photovoltaic Reciprocity in Ultrathin Solar Cells|Urs Aeberhard,Uwe Rau###
(126918, 126918)
 In many cases, the dependence ofdensity and spatial variation of electronic and optical device states on thepoint of operation is modest and the reciprocity relation holds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A Microscopic Perspective on Photovoltaic Reciprocity in Ultrathin Solar Cells|Urs Aeberhard,Uwe Rau###
(126978, 126978)
 Innanostructure-based photovoltaic devices exploiting confined modes, however,the underlying assumptions are no longer justifiable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A Microscopic Perspective on Photovoltaic Reciprocity in Ultrathin Solar Cells|Urs Aeberhard,Uwe Rau###
(127015, 127015)
 In the case of ultrathinabsorber solar cells, the modification of the electronic structure with appliedbias is significant due to the large variation of the built-in field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###A Microscopic Perspective on Photovoltaic Reciprocity in Ultrathin Solar Cells|Urs Aeberhard,Uwe Rau###
(127183, 127184)
 Thisfailure is demonstrated here by numerical simulation of both spectralquantities at normal incidence and emission for an ultrathin GaAs p-i-n<missing VAR> solarcell using an advanced quantum kinetic formalism based on non-equilibriumGreens<missing VAR> functions of coupled photons and charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3-x
###High performance of mixed halide perovskite solar cells: role of halogen atom and plasmonic nanoparticles on the ideal current density of cell|Mohammad Ali Mohebpour,Mohaddeseh Saffari,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(127447, 127457)
 To be able to increase the efficiency of perovskite solar cells which is oneof the most substantial challenges ahead in photovoltaic industry, thestructural and optical properties of perovskite CH3NH3PbI3-xBrx for valuesx<missing VAR>1-3 have been studied employing density functional theory (DFT).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[257.0, 22, '%', 4]

CH3NH3PbI3
###High performance of mixed halide perovskite solar cells: role of halogen atom and plasmonic nanoparticles on the ideal current density of cell|Mohammad Ali Mohebpour,Mohaddeseh Saffari,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(127579, 127587)
 The results of DFT calculations indicatethat adding halogen bromide to CH3NH3PbI3 compound causes the relocation ofenergy bands in band structure which its consequence is increasing the bandgap.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 22, '%', 2]

In
###High performance of mixed halide perovskite solar cells: role of halogen atom and plasmonic nanoparticles on the ideal current density of cell|Mohammad Ali Mohebpour,Mohaddeseh Saffari,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(127626, 127626)
In addition, the effect of increasing Br in this structure can be seen as areduction in lattice constant, refractive index, extinction and absorptioncoefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 22, '%', 1]

Br
###High performance of mixed halide perovskite solar cells: role of halogen atom and plasmonic nanoparticles on the ideal current density of cell|Mohammad Ali Mohebpour,Mohaddeseh Saffari,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(127639, 127639)
In addition, the effect of increasing Br in this structure can be seen as areduction in lattice constant, refractive index, extinction and absorptioncoefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 22, '%', 1]

As
###High performance of mixed halide perovskite solar cells: role of halogen atom and plasmonic nanoparticles on the ideal current density of cell|Mohammad Ali Mohebpour,Mohaddeseh Saffari,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(127682, 127682)
 As well, results of the simulation suggest a significant currentdensity enhancement as much as 22% can be achieved by an optimized array ofPlatinum nanoparticles that is remarkable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 22, '%', 0]

In
###Experimental Determination of Power Losses and Heat Generation in Solar Cells for Photovoltaic-Thermal Applications|Bruno Lorenzi,Maurizio Acciarri,Dario Narducci###
(127941, 127941)
 In this workwe establish a framework in which all the solar cell losses are defined anddescribed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Experimental Determination of Power Losses and Heat Generation in Solar Cells for Photovoltaic-Thermal Applications|Bruno Lorenzi,Maurizio Acciarri,Dario Narducci###
(128130, 128131)
 Applying this methodto three different types of devices (bulk, thin film, and multi-junction) wecould exploit the relationships among losses for the main three generations ofPV cells available nowadays.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Experimental Determination of Power Losses and Heat Generation in Solar Cells for Photovoltaic-Thermal Applications|Bruno Lorenzi,Maurizio Acciarri,Dario Narducci###
(128140, 128140)
 In addition, since the model is explicitlywavelength-dependent, we could show how thermal losses in all cells occur overthe whole solar spectrum, and not only in the infrared region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128338, 128340)
 Here we show that PbI2/AI-terminatedlead-iodide-perovskite (APbI3; ACs+/ methylammonium(M<missing VAR>A)) interfaced withthe charge transport medium of graphene or TiO2 exhibits the sizable/robustRashba-Dresselhaus (RD) effect using density-functional-theory and ab initiomolecular dynamics (AIMD) simulations above cubic-phase temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 330, 'K', 2]

I
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128343, 128343)
 Here we show that PbI2/AI-terminatedlead-iodide-perovskite (APbI3; ACs+/ methylammonium(M<missing VAR>A)) interfaced withthe charge transport medium of graphene or TiO2 exhibits the sizable/robustRashba-Dresselhaus (RD) effect using density-functional-theory and ab initiomolecular dynamics (AIMD) simulations above cubic-phase temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 330, 'K', 2]

PbI3
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128356, 128358)
 Here we show that PbI2/AI-terminatedlead-iodide-perovskite (APbI3; ACs+/ methylammonium(M<missing VAR>A)) interfaced withthe charge transport medium of graphene or TiO2 exhibits the sizable/robustRashba-Dresselhaus (RD) effect using density-functional-theory and ab initiomolecular dynamics (AIMD) simulations above cubic-phase temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 330, 'K', 2]

Cs
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128362, 128362)
 Here we show that PbI2/AI-terminatedlead-iodide-perovskite (APbI3; ACs+/ methylammonium(M<missing VAR>A)) interfaced withthe charge transport medium of graphene or TiO2 exhibits the sizable/robustRashba-Dresselhaus (RD) effect using density-functional-theory and ab initiomolecular dynamics (AIMD) simulations above cubic-phase temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 330, 'K', 2]

TiO2
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128392, 128394)
 Here we show that PbI2/AI-terminatedlead-iodide-perovskite (APbI3; ACs+/ methylammonium(M<missing VAR>A)) interfaced withthe charge transport medium of graphene or TiO2 exhibits the sizable/robustRashba-Dresselhaus (RD) effect using density-functional-theory and ab initiomolecular dynamics (AIMD) simulations above cubic-phase temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 330, 'K', 2]

I
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128437, 128437)
 Here we show that PbI2/AI-terminatedlead-iodide-perovskite (APbI3; ACs+/ methylammonium(M<missing VAR>A)) interfaced withthe charge transport medium of graphene or TiO2 exhibits the sizable/robustRashba-Dresselhaus (RD) effect using density-functional-theory and ab initiomolecular dynamics (AIMD) simulations above cubic-phase temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 330, 'K', 2]

At
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128453, 128453)
 At thePbI2-terminated graphene/CsPbI3(001) interface, ferroelectric distortiontowards graphene facilitates an inversion breaking field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 330, 'K', 1]

PbI2
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128458, 128460)
 At thePbI2-terminated graphene/CsPbI3(001) interface, ferroelectric distortiontowards graphene facilitates an inversion breaking field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 330, 'K', 1]

I3
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128468, 128469)
 At thePbI2-terminated graphene/CsPbI3(001) interface, ferroelectric distortiontowards graphene facilitates an inversion breaking field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 330, 'K', 1]

At
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128497, 128497)
 At the M<missing VAR>AI-terminatedTiO2/M<missing VAR>APbI3(001) interface, the enrooted alignment of M<missing VAR>A+ towardsTiO2 by short-strong hydrogen-bonding and the concomitant PbI3 distortionpreserve the RD interactions even above 330 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 330, 'K', 0]

I
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128503, 128503)
 At the M<missing VAR>AI-terminatedTiO2/M<missing VAR>APbI3(001) interface, the enrooted alignment of M<missing VAR>A+ towardsTiO2 by short-strong hydrogen-bonding and the concomitant PbI3 distortionpreserve the RD interactions even above 330 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 330, 'K', 0]

TiO2
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128508, 128510)
 At the M<missing VAR>AI-terminatedTiO2/M<missing VAR>APbI3(001) interface, the enrooted alignment of M<missing VAR>A+ towardsTiO2 by short-strong hydrogen-bonding and the concomitant PbI3 distortionpreserve the RD interactions even above 330 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 330, 'K', 0]

I3
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128515, 128516)
 At the M<missing VAR>AI-terminatedTiO2/M<missing VAR>APbI3(001) interface, the enrooted alignment of M<missing VAR>A+ towardsTiO2 by short-strong hydrogen-bonding and the concomitant PbI3 distortionpreserve the RD interactions even above 330 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 330, 'K', 0]

TiO2
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128539, 128541)
 At the M<missing VAR>AI-terminatedTiO2/M<missing VAR>APbI3(001) interface, the enrooted alignment of M<missing VAR>A+ towardsTiO2 by short-strong hydrogen-bonding and the concomitant PbI3 distortionpreserve the RD interactions even above 330 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 330, 'K', 0]

PbI3
###Rashba-Dresselhaus Effect in Inorganic/Organic Lead Iodide Perovskite Interfaces|Chang Woo Myung,Saqib Javaid,Kwang S. Kim,Geunsik Lee###
(128559, 128561)
 At the M<missing VAR>AI-terminatedTiO2/M<missing VAR>APbI3(001) interface, the enrooted alignment of M<missing VAR>A+ towardsTiO2 by short-strong hydrogen-bonding and the concomitant PbI3 distortionpreserve the RD interactions even above 330 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 330, 'K', 0]

(VOC)
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128760, 128764)
 Photon recycling is required for a solar cell to achieve an open-circuitvoltage (VOC) and power conversion efficiency (PCE) approaching theShockley-Queisser theoretical limit.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 2.0, '%', 3],[254.0, 77, 'mV', 3],[348.0, 10, '%', 4]

PC
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128775, 128776)
 Photon recycling is required for a solar cell to achieve an open-circuitvoltage (VOC) and power conversion efficiency (PCE) approaching theShockley-Queisser theoretical limit.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2.0, '%', 3],[242.0, 77, 'mV', 3],[336.0, 10, '%', 4]

In
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128794, 128794)
 In metal halide perovskite solar cells,the achievable performance gains from photon recycling remain uncertain due tohigh variability in perovskite material quality and the non-radiativerecombination rate (k<missing VAR>1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2.0, '%', 2],[224.0, 77, 'mV', 2],[318.0, 10, '%', 3]

In
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128862, 128862)
 In this work, we study state-of-the-arttextrmCs0.05(textrmM<missing VAR>A0.17textrmFA0.83)0.95textrmPb(textrmI0.83textrmBr0.17)3films and analyze the impact of varying non-radiative recombination rates onphoton recycling and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2.0, '%', 1],[156.0, 77, 'mV', 1],[250.0, 10, '%', 2]

Cs0.05
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128883, 128884)
 In this work, we study state-of-the-arttextrmCs0.05(textrmM<missing VAR>A0.17textrmFA0.83)0.95textrmPb(textrmI0.83textrmBr0.17)3films and analyze the impact of varying non-radiative recombination rates onphoton recycling and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2.0, '%', 1],[134.0, 77, 'mV', 1],[228.0, 10, '%', 2]

F
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128891, 128891)
 In this work, we study state-of-the-arttextrmCs0.05(textrmM<missing VAR>A0.17textrmFA0.83)0.95textrmPb(textrmI0.83textrmBr0.17)3films and analyze the impact of varying non-radiative recombination rates onphoton recycling and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2.0, '%', 1],[127.0, 77, 'mV', 1],[221.0, 10, '%', 2]

Pb
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128897, 128897)
 In this work, we study state-of-the-arttextrmCs0.05(textrmM<missing VAR>A0.17textrmFA0.83)0.95textrmPb(textrmI0.83textrmBr0.17)3films and analyze the impact of varying non-radiative recombination rates onphoton recycling and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2.0, '%', 1],[121.0, 77, 'mV', 1],[215.0, 10, '%', 2]

I0.83
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128900, 128901)
 In this work, we study state-of-the-arttextrmCs0.05(textrmM<missing VAR>A0.17textrmFA0.83)0.95textrmPb(textrmI0.83textrmBr0.17)3films and analyze the impact of varying non-radiative recombination rates onphoton recycling and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2.0, '%', 1],[117.0, 77, 'mV', 1],[211.0, 10, '%', 2]

Br0.17
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128903, 128904)
 In this work, we study state-of-the-arttextrmCs0.05(textrmM<missing VAR>A0.17textrmFA0.83)0.95textrmPb(textrmI0.83textrmBr0.17)3films and analyze the impact of varying non-radiative recombination rates onphoton recycling and device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2.0, '%', 1],[114.0, 77, 'mV', 1],[208.0, 10, '%', 2]

P
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128976, 128976)
 Importantly, we predict the impact ofphoton recycling at the maximum power point (M<missing VAR>PP), demonstrating an absolutePCE<missing VAR> increase of up to 2.0% in the radiative limit, primarily due to a 77 mVincrease in VM<missing VAR>PP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2.0, '%', 0],[42.0, 77, 'mV', 0],[136.0, 10, '%', 1]

PC
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(128987, 128988)
 Importantly, we predict the impact ofphoton recycling at the maximum power point (M<missing VAR>PP), demonstrating an absolutePCE<missing VAR> increase of up to 2.0% in the radiative limit, primarily due to a 77 mVincrease in VM<missing VAR>PP.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2.0, '%', 0],[30.0, 77, 'mV', 0],[124.0, 10, '%', 1]

V
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(129025, 129025)
 Importantly, we predict the impact ofphoton recycling at the maximum power point (M<missing VAR>PP), demonstrating an absolutePCE<missing VAR> increase of up to 2.0% in the radiative limit, primarily due to a 77 mVincrease in VM<missing VAR>PP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2.0, '%', 0],[7.0, 77, 'mV', 0],[87.0, 10, '%', 1]

PP
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(129027, 129028)
 Importantly, we predict the impact ofphoton recycling at the maximum power point (M<missing VAR>PP), demonstrating an absolutePCE<missing VAR> increase of up to 2.0% in the radiative limit, primarily due to a 77 mVincrease in VM<missing VAR>PP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2.0, '%', 0],[9.0, 77, 'mV', 0],[84.0, 10, '%', 1]

C
###State-of-the-Art Perovskite Solar Cells Benefit from Photon Recycling at Maximum Power Point|Roberto Brenes,Madeleine Laitz,Joel Jean,Dane W. deQuilettes,Vladimir Bulovic###
(129099, 129099)
 Even with finite non-radiative recombination, benefitsfrom photon recycling can be achieved when non-radiative lifetimes and externalLED electroluminescence efficiencies measured at open-circuit,QeLED(textrmVOC), exceed 2 mus<missing VAR> and 10%, respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2.0, '%', 1],[81.0, 77, 'mV', 1],[13.0, 10, '%', 0]

CdTe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129178, 129179)
Enhancing CdTe Solar Cell Performance by Reducing the Ideal Bandgap of CdTe through CdTe1-xSex Alloying.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 1.48, 'eV', 1],[395.0, 1.48, 'eV', 5]

CdTe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129199, 129200)
Enhancing CdTe Solar Cell Performance by Reducing the Ideal Bandgap of CdTe through CdTe1-xSex Alloying.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1.48, 'eV', 1],[374.0, 1.48, 'eV', 5]

CdTe1-x
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129204, 129208)
Enhancing CdTe Solar Cell Performance by Reducing the Ideal Bandgap of CdTe through CdTe1-xSex Alloying.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[70.0, 1.48, 'eV', 1],[366.0, 1.48, 'eV', 5]

CdTe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129214, 129215)
 CdTe is one of the leading materials for low cost, high efficiency thin-filmsolar cells, because it has a high absorption coefficient and a nearly idealband gap of 1.48 eV for solar cell according to the Shockley-Queisser limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1.48, 'eV', 0],[359.0, 1.48, 'eV', 4]

PC
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129318, 129319)
However, its solar to electricity power conversion efficiency (PCE) is hinderedby the relatively low open circuit voltage (VOC) due to intrinsic defectrelated issues.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1.48, 'eV', 1],[255.0, 1.48, 'eV', 3]

(VOC)
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129342, 129346)
However, its solar to electricity power conversion efficiency (PCE) is hinderedby the relatively low open circuit voltage (VOC) due to intrinsic defectrelated issues.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1.48, 'eV', 1],[228.0, 1.48, 'eV', 3]

CdTe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129377, 129378)
 Here, we propose the strategy of improving CdTe solar cellperformance byr reducing the ideal band gap of CdTe to gain moreshort-circuit current from long-wavelength absorption without sacrificing muchVOC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 1.48, 'eV', 2],[196.0, 1.48, 'eV', 2]

CdTe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129401, 129402)
 Here, we propose the strategy of improving CdTe solar cellperformance byr reducing the ideal band gap of CdTe to gain moreshort-circuit current from long-wavelength absorption without sacrificing muchVOC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1.48, 'eV', 2],[172.0, 1.48, 'eV', 2]

VOC
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129432, 129434)
 Here, we propose the strategy of improving CdTe solar cellperformance byr reducing the ideal band gap of CdTe to gain moreshort-circuit current from long-wavelength absorption without sacrificing muchVOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1.48, 'eV', 2],[140.0, 1.48, 'eV', 2]

CdTe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129439, 129440)
 Alloying CdTe with CdSe seems to be the most appropriate approach toreduce the band gap because of the large optical bowing and relatively smalllattice mismatch in this system, even though CdSe has larger band gap thanCdTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 1.48, 'eV', 3],[134.0, 1.48, 'eV', 1]

CdSe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129444, 129445)
 Alloying CdTe with CdSe seems to be the most appropriate approach toreduce the band gap because of the large optical bowing and relatively smalllattice mismatch in this system, even though CdSe has larger band gap thanCdTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 1.48, 'eV', 3],[129.0, 1.48, 'eV', 1]

CdSe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129506, 129507)
 Alloying CdTe with CdSe seems to be the most appropriate approach toreduce the band gap because of the large optical bowing and relatively smalllattice mismatch in this system, even though CdSe has larger band gap thanCdTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 1.48, 'eV', 3],[67.0, 1.48, 'eV', 1]

CdTe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129520, 129521)
 Alloying CdTe with CdSe seems to be the most appropriate approach toreduce the band gap because of the large optical bowing and relatively smalllattice mismatch in this system, even though CdSe has larger band gap thanCdTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 1.48, 'eV', 3],[53.0, 1.48, 'eV', 1]

CdTe1-x
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129558, 129562)
 Using the first principle hybrid functional calculation, we find that theminimum band gap of the CdTe1-xSex alloy can be reduced from 1.48 eV at x<missing VAR>0 to1.39 e<missing VAR>V at x<missing VAR>0.32.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[280.0, 1.48, 'eV', 4],[12.0, 1.48, 'eV', 0]

V
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129587, 129587)
 Using the first principle hybrid functional calculation, we find that theminimum band gap of the CdTe1-xSex alloy can be reduced from 1.48 eV at x<missing VAR>0 to1.39 e<missing VAR>V at x<missing VAR>0.32.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 1.48, 'eV', 4],[13.0, 1.48, 'eV', 0]

CdTe
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129638, 129639)
 We also show that the formation of the alloy can improve thedefect property, for example, p<missing VAR>-type doping of CdTe by CuCd can be greatlyenhanced by the alloying effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 1.48, 'eV', 5],[64.0, 1.48, 'eV', 1]

CuCd
###Enhancing CdTe Solar Cell Performance by Reducing the "Ideal" Bandgap of CdTe through CdTe1-xSex Alloying|Jingxiu Yang,Su-Huai Wei###
(129643, 129644)
 We also show that the formation of the alloy can improve thedefect property, for example, p<missing VAR>-type doping of CdTe by CuCd can be greatlyenhanced by the alloying effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 1.48, 'eV', 5],[69.0, 1.48, 'eV', 1]

S
###Voltage matching, étendue and ratchet steps in advanced concept solar cells|Andreas Pusch,Nicholas J. Ekins Daukes###
(129718, 129718)
 Many advanced solar cell concepts propose surpassing the Shockley Queisser(SQ) limit by introducing multiple quasi-Fermi level separations that arearranged in series and/or in parallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Voltage matching, étendue and ratchet steps in advanced concept solar cells|Andreas Pusch,Nicholas J. Ekins Daukes###
(129762, 129762)
 Exceeding the SQ<missing VAR> limit with any parallelarrangement involves intermediate states that deliver additional chargecarriers at, ideally, the same electro-chemical potential as the other elementsin the parallel network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs/AlGaAs
###Contribution to the study of sub-bandgap photon absorption in quantum dot InAs/AlGaAs intermediate band solar cells|Juan Villa,Iñigo Ramiro,José María Ripalda,Ignacio Tobías,Pablo García-Linares,Elisa Antolín,Antonio Martí###
(130148, 130153)
Contribution to the study of sub-bandgap photon absorption in quantum dot InAs/AlGaAs intermediate band solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[335.0, 9, 'K', 6]

(IBSCs)
###Contribution to the study of sub-bandgap photon absorption in quantum dot InAs/AlGaAs intermediate band solar cells|Juan Villa,Iñigo Ramiro,José María Ripalda,Ignacio Tobías,Pablo García-Linares,Elisa Antolín,Antonio Martí###
(130172, 130177)
 Intermediate band solar cells (IBSCs) pursue the increase in efficiency byabsorbing below-bandgap energy photons while preserving the output voltage.
Featurization successful!
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 9, 'K', 5]

IBSCs
###Contribution to the study of sub-bandgap photon absorption in quantum dot InAs/AlGaAs intermediate band solar cells|Juan Villa,Iñigo Ramiro,José María Ripalda,Ignacio Tobías,Pablo García-Linares,Elisa Antolín,Antonio Martí###
(130216, 130219)
Experimental IBSCs based on quantum dots have already demonstrated that bothbelow-bandgap photon absorption and the output voltage preservation, arepossible.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 9, 'K', 4]

Cd
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130559, 130559)
Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 150, 'C', 3],[179.0, 300, 'C', 3],[250.0, 6.5, 'nm', 4],[444.0, 150, 'C', 7],[565.0, 200, 'C', 8]

Cu
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130575, 130575)
Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 150, 'C', 3],[163.0, 300, 'C', 3],[234.0, 6.5, 'nm', 4],[428.0, 150, 'C', 7],[549.0, 200, 'C', 8]

In
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130577, 130577)
Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 150, 'C', 3],[161.0, 300, 'C', 3],[232.0, 6.5, 'nm', 4],[426.0, 150, 'C', 7],[547.0, 200, 'C', 8]

Ga
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130579, 130579)
Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 150, 'C', 3],[159.0, 300, 'C', 3],[230.0, 6.5, 'nm', 4],[424.0, 150, 'C', 7],[545.0, 200, 'C', 8]

Se2
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130581, 130582)
Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 150, 'C', 3],[156.0, 300, 'C', 3],[227.0, 6.5, 'nm', 4],[421.0, 150, 'C', 7],[542.0, 200, 'C', 8]

Cu
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130593, 130593)
 Cu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells are promising candidates for efficientsunlight harvesting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 150, 'C', 2],[145.0, 300, 'C', 2],[216.0, 6.5, 'nm', 3],[410.0, 150, 'C', 6],[531.0, 200, 'C', 7]

In
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130595, 130595)
 Cu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells are promising candidates for efficientsunlight harvesting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 150, 'C', 2],[143.0, 300, 'C', 2],[214.0, 6.5, 'nm', 3],[408.0, 150, 'C', 6],[529.0, 200, 'C', 7]

Ga
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130597, 130597)
 Cu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells are promising candidates for efficientsunlight harvesting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 150, 'C', 2],[141.0, 300, 'C', 2],[212.0, 6.5, 'nm', 3],[406.0, 150, 'C', 6],[527.0, 200, 'C', 7]

Se2
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130599, 130600)
 Cu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells are promising candidates for efficientsunlight harvesting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 150, 'C', 2],[138.0, 300, 'C', 2],[209.0, 6.5, 'nm', 3],[403.0, 150, 'C', 6],[524.0, 200, 'C', 7]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130603, 130604)
 Cu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells are promising candidates for efficientsunlight harvesting.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 150, 'C', 2],[134.0, 300, 'C', 2],[205.0, 6.5, 'nm', 3],[399.0, 150, 'C', 6],[520.0, 200, 'C', 7]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130606, 130606)
 Cu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells are promising candidates for efficientsunlight harvesting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 150, 'C', 2],[132.0, 300, 'C', 2],[203.0, 6.5, 'nm', 3],[397.0, 150, 'C', 6],[518.0, 200, 'C', 7]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130712, 130713)
 Here, we investigate thethermally-induced degradation processes in a set of CIG<missing VAR>Se-based solar cellsthat were annealed at temperatures between 150C and 300C.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 150, 'C', 0],[25.0, 300, 'C', 0],[96.0, 6.5, 'nm', 1],[290.0, 150, 'C', 4],[411.0, 200, 'C', 5]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130715, 130715)
 Here, we investigate thethermally-induced degradation processes in a set of CIG<missing VAR>Se-based solar cellsthat were annealed at temperatures between 150C and 300C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 150, 'C', 0],[23.0, 300, 'C', 0],[94.0, 6.5, 'nm', 1],[288.0, 150, 'C', 4],[409.0, 200, 'C', 5]

P
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130754, 130754)
 Using correlativeatom probe tomography (APT)/transmission electron microscope (TEM), we foundthat the buffer-absorber interface is not sharp but consists of an interfacialzone (2 - 6.5 nm wide) where a gradient of constituent elements belonging tothe CdS buffer and CIG<missing VAR>Se absorber appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 150, 'C', 1],[16.0, 300, 'C', 1],[55.0, 6.5, 'nm', 0],[249.0, 150, 'C', 3],[370.0, 200, 'C', 4]

CdS
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130833, 130834)
 Using correlativeatom probe tomography (APT)/transmission electron microscope (TEM), we foundthat the buffer-absorber interface is not sharp but consists of an interfacialzone (2 - 6.5 nm wide) where a gradient of constituent elements belonging tothe CdS buffer and CIG<missing VAR>Se absorber appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 150, 'C', 1],[95.0, 300, 'C', 1],[24.0, 6.5, 'nm', 0],[169.0, 150, 'C', 3],[290.0, 200, 'C', 4]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130840, 130841)
 Using correlativeatom probe tomography (APT)/transmission electron microscope (TEM), we foundthat the buffer-absorber interface is not sharp but consists of an interfacialzone (2 - 6.5 nm wide) where a gradient of constituent elements belonging tothe CdS buffer and CIG<missing VAR>Se absorber appears.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 150, 'C', 1],[102.0, 300, 'C', 1],[31.0, 6.5, 'nm', 0],[162.0, 150, 'C', 3],[283.0, 200, 'C', 4]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130843, 130843)
 Using correlativeatom probe tomography (APT)/transmission electron microscope (TEM), we foundthat the buffer-absorber interface is not sharp but consists of an interfacialzone (2 - 6.5 nm wide) where a gradient of constituent elements belonging tothe CdS buffer and CIG<missing VAR>Se absorber appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 150, 'C', 1],[105.0, 300, 'C', 1],[34.0, 6.5, 'nm', 0],[160.0, 150, 'C', 3],[281.0, 200, 'C', 4]

Cd
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130858, 130858)
 An enhanced short-range Cdin-diffusion inside the CIG<missing VAR>Se was observed whenever a low Ga/(Ga+In) ratiooccurred at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 150, 'C', 2],[120.0, 300, 'C', 2],[49.0, 6.5, 'nm', 1],[145.0, 150, 'C', 2],[266.0, 200, 'C', 3]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130869, 130870)
 An enhanced short-range Cdin-diffusion inside the CIG<missing VAR>Se was observed whenever a low Ga/(Ga+In) ratiooccurred at the interface.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 150, 'C', 2],[131.0, 300, 'C', 2],[60.0, 6.5, 'nm', 1],[133.0, 150, 'C', 2],[254.0, 200, 'C', 3]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130872, 130872)
 An enhanced short-range Cdin-diffusion inside the CIG<missing VAR>Se was observed whenever a low Ga/(Ga+In) ratiooccurred at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 150, 'C', 2],[134.0, 300, 'C', 2],[63.0, 6.5, 'nm', 1],[131.0, 150, 'C', 2],[252.0, 200, 'C', 3]

Ga
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130887, 130887)
 An enhanced short-range Cdin-diffusion inside the CIG<missing VAR>Se was observed whenever a low Ga/(Ga+In) ratiooccurred at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 150, 'C', 2],[149.0, 300, 'C', 2],[78.0, 6.5, 'nm', 1],[116.0, 150, 'C', 2],[237.0, 200, 'C', 3]

In
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130889, 130889)
 An enhanced short-range Cdin-diffusion inside the CIG<missing VAR>Se was observed whenever a low Ga/(Ga+In) ratiooccurred at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 150, 'C', 2],[151.0, 300, 'C', 2],[80.0, 6.5, 'nm', 1],[114.0, 150, 'C', 2],[235.0, 200, 'C', 3]

Ga
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130916, 130916)
 This might indicate the presence of Ga vacancies asa channeling defect for Cd in-diffusion inside the CIG<missing VAR>Se layer leading to aburied pn-homojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 150, 'C', 3],[178.0, 300, 'C', 3],[107.0, 6.5, 'nm', 2],[87.0, 150, 'C', 1],[208.0, 200, 'C', 2]

Cd
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130931, 130931)
 This might indicate the presence of Ga vacancies asa channeling defect for Cd in-diffusion inside the CIG<missing VAR>Se layer leading to aburied pn-homojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 150, 'C', 3],[193.0, 300, 'C', 3],[122.0, 6.5, 'nm', 2],[72.0, 150, 'C', 1],[193.0, 200, 'C', 2]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130941, 130942)
 This might indicate the presence of Ga vacancies asa channeling defect for Cd in-diffusion inside the CIG<missing VAR>Se layer leading to aburied pn-homojunction.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 150, 'C', 3],[203.0, 300, 'C', 3],[132.0, 6.5, 'nm', 2],[61.0, 150, 'C', 1],[182.0, 200, 'C', 2]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130944, 130944)
 This might indicate the presence of Ga vacancies asa channeling defect for Cd in-diffusion inside the CIG<missing VAR>Se layer leading to aburied pn-homojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 150, 'C', 3],[206.0, 300, 'C', 3],[135.0, 6.5, 'nm', 2],[59.0, 150, 'C', 1],[180.0, 200, 'C', 2]

Cd
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130976, 130976)
 We evidence that a considerable amount of Cd is foundinside the CIG<missing VAR>Se layer at annealing temperatures higher than 150C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 150, 'C', 4],[238.0, 300, 'C', 4],[167.0, 6.5, 'nm', 3],[27.0, 150, 'C', 0],[148.0, 200, 'C', 1]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130987, 130988)
 We evidence that a considerable amount of Cd is foundinside the CIG<missing VAR>Se layer at annealing temperatures higher than 150C.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 150, 'C', 4],[249.0, 300, 'C', 4],[178.0, 6.5, 'nm', 3],[15.0, 150, 'C', 0],[136.0, 200, 'C', 1]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(130990, 130990)
 We evidence that a considerable amount of Cd is foundinside the CIG<missing VAR>Se layer at annealing temperatures higher than 150C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 150, 'C', 4],[252.0, 300, 'C', 4],[181.0, 6.5, 'nm', 3],[13.0, 150, 'C', 0],[134.0, 200, 'C', 1]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131023, 131024)
 Furtherinvestigations of the elemental redistribution inside the CIG<missing VAR>Se layer combinedwith C-V measurements support the formation of CdCu donor like defects deepinside the p<missing VAR>-type CIG<missing VAR>Se which lead to a strong compensation of the CIG<missing VAR>Se layerand hence to strong deterioration of cell efficiency at annealing temperatureshigher than 200C.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 150, 'C', 5],[285.0, 300, 'C', 5],[214.0, 6.5, 'nm', 4],[20.0, 150, 'C', 1],[100.0, 200, 'C', 0]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131026, 131026)
 Furtherinvestigations of the elemental redistribution inside the CIG<missing VAR>Se layer combinedwith C-V measurements support the formation of CdCu donor like defects deepinside the p<missing VAR>-type CIG<missing VAR>Se which lead to a strong compensation of the CIG<missing VAR>Se layerand hence to strong deterioration of cell efficiency at annealing temperatureshigher than 200C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 150, 'C', 5],[288.0, 300, 'C', 5],[217.0, 6.5, 'nm', 4],[23.0, 150, 'C', 1],[98.0, 200, 'C', 0]

C
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131035, 131035)
 Furtherinvestigations of the elemental redistribution inside the CIG<missing VAR>Se layer combinedwith C-V measurements support the formation of CdCu donor like defects deepinside the p<missing VAR>-type CIG<missing VAR>Se which lead to a strong compensation of the CIG<missing VAR>Se layerand hence to strong deterioration of cell efficiency at annealing temperatureshigher than 200C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 150, 'C', 5],[297.0, 300, 'C', 5],[226.0, 6.5, 'nm', 4],[32.0, 150, 'C', 1],[89.0, 200, 'C', 0]

V
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131037, 131037)
 Furtherinvestigations of the elemental redistribution inside the CIG<missing VAR>Se layer combinedwith C-V measurements support the formation of CdCu donor like defects deepinside the p<missing VAR>-type CIG<missing VAR>Se which lead to a strong compensation of the CIG<missing VAR>Se layerand hence to strong deterioration of cell efficiency at annealing temperatureshigher than 200C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 150, 'C', 5],[299.0, 300, 'C', 5],[228.0, 6.5, 'nm', 4],[34.0, 150, 'C', 1],[87.0, 200, 'C', 0]

CdCu
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131049, 131050)
 Furtherinvestigations of the elemental redistribution inside the CIG<missing VAR>Se layer combinedwith C-V measurements support the formation of CdCu donor like defects deepinside the p<missing VAR>-type CIG<missing VAR>Se which lead to a strong compensation of the CIG<missing VAR>Se layerand hence to strong deterioration of cell efficiency at annealing temperatureshigher than 200C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 150, 'C', 5],[311.0, 300, 'C', 5],[240.0, 6.5, 'nm', 4],[46.0, 150, 'C', 1],[74.0, 200, 'C', 0]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131069, 131070)
 Furtherinvestigations of the elemental redistribution inside the CIG<missing VAR>Se layer combinedwith C-V measurements support the formation of CdCu donor like defects deepinside the p<missing VAR>-type CIG<missing VAR>Se which lead to a strong compensation of the CIG<missing VAR>Se layerand hence to strong deterioration of cell efficiency at annealing temperatureshigher than 200C.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 150, 'C', 5],[331.0, 300, 'C', 5],[260.0, 6.5, 'nm', 4],[66.0, 150, 'C', 1],[54.0, 200, 'C', 0]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131072, 131072)
 Furtherinvestigations of the elemental redistribution inside the CIG<missing VAR>Se layer combinedwith C-V measurements support the formation of CdCu donor like defects deepinside the p<missing VAR>-type CIG<missing VAR>Se which lead to a strong compensation of the CIG<missing VAR>Se layerand hence to strong deterioration of cell efficiency at annealing temperatureshigher than 200C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 150, 'C', 5],[334.0, 300, 'C', 5],[263.0, 6.5, 'nm', 4],[69.0, 150, 'C', 1],[52.0, 200, 'C', 0]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131090, 131091)
 Furtherinvestigations of the elemental redistribution inside the CIG<missing VAR>Se layer combinedwith C-V measurements support the formation of CdCu donor like defects deepinside the p<missing VAR>-type CIG<missing VAR>Se which lead to a strong compensation of the CIG<missing VAR>Se layerand hence to strong deterioration of cell efficiency at annealing temperatureshigher than 200C.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 150, 'C', 5],[352.0, 300, 'C', 5],[281.0, 6.5, 'nm', 4],[87.0, 150, 'C', 1],[33.0, 200, 'C', 0]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131093, 131093)
 Furtherinvestigations of the elemental redistribution inside the CIG<missing VAR>Se layer combinedwith C-V measurements support the formation of CdCu donor like defects deepinside the p<missing VAR>-type CIG<missing VAR>Se which lead to a strong compensation of the CIG<missing VAR>Se layerand hence to strong deterioration of cell efficiency at annealing temperatureshigher than 200C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 150, 'C', 5],[355.0, 300, 'C', 5],[284.0, 6.5, 'nm', 4],[90.0, 150, 'C', 1],[31.0, 200, 'C', 0]

Cu
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131141, 131141)
 Hence, understanding the degradation processes inCu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells opens new opportunities for furtherimprovement of the long-term device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 150, 'C', 6],[403.0, 300, 'C', 6],[332.0, 6.5, 'nm', 5],[138.0, 150, 'C', 2],[17.0, 200, 'C', 1]

In
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131143, 131143)
 Hence, understanding the degradation processes inCu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells opens new opportunities for furtherimprovement of the long-term device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 150, 'C', 6],[405.0, 300, 'C', 6],[334.0, 6.5, 'nm', 5],[140.0, 150, 'C', 2],[19.0, 200, 'C', 1]

Ga
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131145, 131145)
 Hence, understanding the degradation processes inCu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells opens new opportunities for furtherimprovement of the long-term device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[410.0, 150, 'C', 6],[407.0, 300, 'C', 6],[336.0, 6.5, 'nm', 5],[142.0, 150, 'C', 2],[21.0, 200, 'C', 1]

Se2
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131147, 131148)
 Hence, understanding the degradation processes inCu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells opens new opportunities for furtherimprovement of the long-term device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 150, 'C', 6],[409.0, 300, 'C', 6],[338.0, 6.5, 'nm', 5],[144.0, 150, 'C', 2],[23.0, 200, 'C', 1]

CI
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131151, 131152)
 Hence, understanding the degradation processes inCu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells opens new opportunities for furtherimprovement of the long-term device performance.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 150, 'C', 6],[413.0, 300, 'C', 6],[342.0, 6.5, 'nm', 5],[148.0, 150, 'C', 2],[27.0, 200, 'C', 1]

Se
###Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell|Anna Koprek,Pawel Zabierowski,Marek Pawlowski,Luv Sharma,Christoph Freysoldt,Baptiste Gault,Roland Wuerz,Oana Cojocaru-Miredin###
(131154, 131154)
 Hence, understanding the degradation processes inCu(In,Ga)Se2 (CIG<missing VAR>Se)-based solar cells opens new opportunities for furtherimprovement of the long-term device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 150, 'C', 6],[416.0, 300, 'C', 6],[345.0, 6.5, 'nm', 5],[151.0, 150, 'C', 2],[30.0, 200, 'C', 1]

(OSCs)
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131662, 131666)
 The active layer crystallinity has long been associated with favourableorganic solar cells (OSCs) properties such as high mobility and Fill Factor.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 19, '%', 1],[222.0, 4, 'TIC', 3],[224.0, 4, 'TICO', 3]

In
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131685, 131685)
 Inparticular, this applies to acceptor materials such as fullerene-derivativesand the most recent Non-Fullerene Acceptors (NFAs), which are now surpassing19% of Power Conversion Efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 19, '%', 0],[203.0, 4, 'TIC', 2],[205.0, 4, 'TICO', 2]

(NFAs)
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131724, 131728)
 Inparticular, this applies to acceptor materials such as fullerene-derivativesand the most recent Non-Fullerene Acceptors (NFAs), which are now surpassing19% of Power Conversion Efficiency.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 19, '%', 0],[160.0, 4, 'TIC', 2],[162.0, 4, 'TICO', 2]

In
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131833, 131833)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 19, '%', 2],[55.0, 4, 'TIC', 0],[57.0, 4, 'TICO', 0]

NFAs
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131855, 131857)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 19, '%', 2],[31.0, 4, 'TIC', 0],[33.0, 4, 'TICO', 0]

I
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131862, 131862)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 19, '%', 2],[26.0, 4, 'TIC', 0],[28.0, 4, 'TICO', 0]

B
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131865, 131865)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 19, '%', 2],[23.0, 4, 'TIC', 0],[25.0, 4, 'TICO', 0]

I
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131869, 131869)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 19, '%', 2],[19.0, 4, 'TIC', 0],[21.0, 4, 'TICO', 0]

IC
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131871, 131872)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 19, '%', 2],[16.0, 4, 'TIC', 0],[18.0, 4, 'TICO', 0]

I
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131875, 131875)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 19, '%', 2],[13.0, 4, 'TIC', 0],[15.0, 4, 'TICO', 0]

IC
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131877, 131878)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 19, '%', 2],[10.0, 4, 'TIC', 0],[12.0, 4, 'TICO', 0]

I
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131883, 131883)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 19, '%', 2],[5.0, 4, 'TIC', 0],[7.0, 4, 'TICO', 0]

IC
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131885, 131886)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 19, '%', 2],[2.0, 4, 'TIC', 0],[4.0, 4, 'TICO', 0]

O
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131900, 131900)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 19, '%', 2],[12.0, 4, 'TIC', 0],[10.0, 4, 'TICO', 0]

NFAs
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131940, 131942)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 19, '%', 2],[52.0, 4, 'TIC', 0],[50.0, 4, 'TICO', 0]

NF
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131947, 131948)
 In this work, we investigate themolecular organisation of seven NFAs (o<missing VAR>-IDTBR<missing VAR>, ID<missing VAR>IC, IT<missing VAR>IC, m<missing VAR>-IT<missing VAR>IC, 4TIC, 4TICO,m<missing VAR>-4T<missing VAR>ICO), following the evolution of their packing motif in single-crystals,powder and thin films made with pure NFAs and donorNFA blends.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 19, '%', 2],[59.0, 4, 'TIC', 0],[57.0, 4, 'TICO', 0]

In
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131954, 131954)
 In general, weobserved a good correlation between the NFA single crystal packing and theirmolecular arrangement in the bulk heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 19, '%', 3],[66.0, 4, 'TIC', 1],[64.0, 4, 'TICO', 1]

NF
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(131974, 131975)
 In general, weobserved a good correlation between the NFA single crystal packing and theirmolecular arrangement in the bulk heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 19, '%', 3],[86.0, 4, 'TIC', 1],[84.0, 4, 'TICO', 1]

NF
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(132007, 132008)
 However, the NFA packingmotif is not directly affecting the device parameters but it provide an impacton the material propensity to form highly crystalline domain in the blend.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 19, '%', 4],[119.0, 4, 'TIC', 2],[117.0, 4, 'TICO', 2]

NF
###Understanding the Role of Non-Fullerene Acceptors Crystallinity on the Charge Transport Properties and Performance of Organic Solar Cells|Pierluigi Mondelli,Pascal Kaienburg,Francesco Silvestri,Rebecca Scatena,Claire Welton,Martine Grandjean,Vincent Lemaur,Eduardo Solano,Mathias Nyman,Peter Horton,Simon Coles,Esther Barrena,Moritz Riede,Paolo Radaelli,David Beljonne,Manjunatha Reddy,Graham Morse###
(132071, 132072)
Although that NFA crystallinity is required to obtain high mobility, the domainpurity is more important to limit the bimolecular recombination and to obtainhigh efficiency organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 19, '%', 5],[183.0, 4, 'TIC', 3],[181.0, 4, 'TICO', 3]

Be
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132152, 132152)
How Good Can 2D Excitonic Solar Cells Be?
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 0],[64.0, 19, '%', 2],[221.0, 6, '%', 4],[322.0, 9.22, '%', 6],[355.0, 2, 'D', 7],[374.0, 10, '%', 7],[385.0, 100, 'W', 7]

PC
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132227, 132228)
 Among them, the organic polymers and smallmolecules based solar cells have now exceeded 19% power conversion efficiency(PCE).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 2, 'D', 2],[11.0, 19, '%', 0],[145.0, 6, '%', 2],[246.0, 9.22, '%', 4],[279.0, 2, 'D', 5],[298.0, 10, '%', 5],[309.0, 100, 'W', 5]

OP
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132240, 132241)
 While organic photovoltaics (OPVs) are approaching maturity, the adventof strongly excitonic inorganic semiconductors such as two-dimensionaltransition metal dichalcogenides (TMDCs) has renewed interest in excitonicsolar cells due to their high-optical constants, stable inorganic structure andsub-nm film thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'D', 3],[24.0, 19, '%', 1],[132.0, 6, '%', 1],[233.0, 9.22, '%', 3],[266.0, 2, 'D', 4],[285.0, 10, '%', 4],[296.0, 100, 'W', 4]

Cs
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132286, 132286)
 While organic photovoltaics (OPVs) are approaching maturity, the adventof strongly excitonic inorganic semiconductors such as two-dimensionaltransition metal dichalcogenides (TMDCs) has renewed interest in excitonicsolar cells due to their high-optical constants, stable inorganic structure andsub-nm film thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2, 'D', 3],[70.0, 19, '%', 1],[87.0, 6, '%', 1],[188.0, 9.22, '%', 3],[221.0, 2, 'D', 4],[240.0, 10, '%', 4],[251.0, 100, 'W', 4]

C
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132352, 132352)
 While several reports have been published on TMDCbased PVs, achieving power conversion efficiencies higher than 6% under one-sunAM1.5G illumination has remained challenging.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 2, 'D', 4],[136.0, 19, '%', 2],[21.0, 6, '%', 0],[122.0, 9.22, '%', 2],[155.0, 2, 'D', 3],[174.0, 10, '%', 3],[185.0, 100, 'W', 3]

P
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132357, 132357)
 While several reports have been published on TMDCbased PVs, achieving power conversion efficiencies higher than 6% under one-sunAM1.5G illumination has remained challenging.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 2, 'D', 4],[141.0, 19, '%', 2],[16.0, 6, '%', 0],[117.0, 9.22, '%', 2],[150.0, 2, 'D', 3],[169.0, 10, '%', 3],[180.0, 100, 'W', 3]

C
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132435, 132435)
 Here, we perform a full opticaland electronic analysis of design, structure and performance of monolayer TMDCbased, single-junction excitonic PVs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 2, 'D', 5],[219.0, 19, '%', 3],[62.0, 6, '%', 1],[39.0, 9.22, '%', 1],[72.0, 2, 'D', 2],[91.0, 10, '%', 2],[102.0, 100, 'W', 2]

P
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132447, 132447)
 Here, we perform a full opticaland electronic analysis of design, structure and performance of monolayer TMDCbased, single-junction excitonic PVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 2, 'D', 5],[231.0, 19, '%', 3],[74.0, 6, '%', 1],[27.0, 9.22, '%', 1],[60.0, 2, 'D', 2],[79.0, 10, '%', 2],[90.0, 100, 'W', 2]

PC
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132468, 132469)
 Our computational model with optimizedproperties predicts a PCE<missing VAR> of 9.22% in a superlattice device structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 2, 'D', 6],[252.0, 19, '%', 4],[95.0, 6, '%', 2],[5.0, 9.22, '%', 0],[38.0, 2, 'D', 1],[57.0, 10, '%', 1],[68.0, 100, 'W', 1]

PC
###How Good Can 2D Excitonic Solar Cells Be?|Zekun Hu,Da Lin,Jason Lynch,Kevin Xu,Deep Jariwala###
(132502, 132503)
 Ouranalysis suggests that, while the PCE<missing VAR> for 2D excitonic solar cells may belimited to < 10%, a specific power > 100 W g<missing VAR>-1 may be achieved with ourproposed designs, making them attractive in aerospace, distributed remotesensing, and wearable electronics.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 2, 'D', 7],[286.0, 19, '%', 5],[129.0, 6, '%', 3],[28.0, 9.22, '%', 1],[4.0, 2, 'D', 0],[23.0, 10, '%', 0],[34.0, 100, 'W', 0]

Sn
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132608, 132608)
Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[461.0, 13.6, '%', 10],[482.0, 12.0, '%', 10],[487.0, 1, 'cm', 10]

S
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132610, 132610)
Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[459.0, 13.6, '%', 10],[480.0, 12.0, '%', 10],[485.0, 1, 'cm', 10]

Se
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132613, 132613)
Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 13.6, '%', 10],[477.0, 12.0, '%', 10],[482.0, 1, 'cm', 10]

Sn
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132631, 132631)
 Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materialsfor its earth-abundant reserves, environmental friendliness, and highstability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 13.6, '%', 9],[459.0, 12.0, '%', 9],[464.0, 1, 'cm', 9]

S
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132633, 132633)
 Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materialsfor its earth-abundant reserves, environmental friendliness, and highstability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 13.6, '%', 9],[457.0, 12.0, '%', 9],[462.0, 1, 'cm', 9]

Se
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132636, 132636)
 Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materialsfor its earth-abundant reserves, environmental friendliness, and highstability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[433.0, 13.6, '%', 9],[454.0, 12.0, '%', 9],[459.0, 1, 'cm', 9]

C
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132641, 132641)
 Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materialsfor its earth-abundant reserves, environmental friendliness, and highstability.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 13.6, '%', 9],[449.0, 12.0, '%', 9],[454.0, 1, 'cm', 9]

Se
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132645, 132645)
 Cu2ZnSn(S, Se)4 (CZTSSe) is one of most competitive photovoltaic materialsfor its earth-abundant reserves, environmental friendliness, and highstability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[424.0, 13.6, '%', 9],[445.0, 12.0, '%', 9],[450.0, 1, 'cm', 9]

C
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132692, 132692)
The quality of CZTSSe absorber determines the power-conversionefficiency (PCE) of CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 13.6, '%', 8],[398.0, 12.0, '%', 8],[403.0, 1, 'cm', 8]

SSe
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132695, 132696)
The quality of CZTSSe absorber determines the power-conversionefficiency (PCE) of CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 13.6, '%', 8],[394.0, 12.0, '%', 8],[399.0, 1, 'cm', 8]

PC
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132712, 132713)
The quality of CZTSSe absorber determines the power-conversionefficiency (PCE) of CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 13.6, '%', 8],[377.0, 12.0, '%', 8],[382.0, 1, 'cm', 8]

C
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132719, 132719)
The quality of CZTSSe absorber determines the power-conversionefficiency (PCE) of CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 13.6, '%', 8],[371.0, 12.0, '%', 8],[376.0, 1, 'cm', 8]

SSe
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132722, 132723)
The quality of CZTSSe absorber determines the power-conversionefficiency (PCE) of CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 13.6, '%', 8],[367.0, 12.0, '%', 8],[372.0, 1, 'cm', 8]

Cu
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132759, 132759)
 The absorbers<missing VAR> quality lies onpost-selenization process, which is the reaction of Cu-Zn-Sn precursor andselenium vapor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 13.6, '%', 7],[331.0, 12.0, '%', 7],[336.0, 1, 'cm', 7]

Zn
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132761, 132761)
 The absorbers<missing VAR> quality lies onpost-selenization process, which is the reaction of Cu-Zn-Sn precursor andselenium vapor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 13.6, '%', 7],[329.0, 12.0, '%', 7],[334.0, 1, 'cm', 7]

Sn
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132763, 132763)
 The absorbers<missing VAR> quality lies onpost-selenization process, which is the reaction of Cu-Zn-Sn precursor andselenium vapor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 13.6, '%', 7],[327.0, 12.0, '%', 7],[332.0, 1, 'cm', 7]

Se
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132900, 132900)
Here, in our dual-temperaturezone selenization scheme, a solid-liquid and solid-gas (solid precursor andliquid/gas phase Se) synergistic reaction strategy has been developed toprecisely regulate the selenization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 13.6, '%', 3],[190.0, 12.0, '%', 3],[195.0, 1, 'cm', 3]

Se
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132935, 132935)
 Pre-deposited excess liquid Se provideshigh Se chemical potential to drive a direct and fast formation of the CZTSSephase, significantly reducing the amount of binary and ternary compounds withinphase evolution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 13.6, '%', 2],[155.0, 12.0, '%', 2],[160.0, 1, 'cm', 2]

Se
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132942, 132942)
 Pre-deposited excess liquid Se provideshigh Se chemical potential to drive a direct and fast formation of the CZTSSephase, significantly reducing the amount of binary and ternary compounds withinphase evolution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 13.6, '%', 2],[148.0, 12.0, '%', 2],[153.0, 1, 'cm', 2]

C
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132966, 132966)
 Pre-deposited excess liquid Se provideshigh Se chemical potential to drive a direct and fast formation of the CZTSSephase, significantly reducing the amount of binary and ternary compounds withinphase evolution.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 13.6, '%', 2],[124.0, 12.0, '%', 2],[129.0, 1, 'cm', 2]

SSe
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(132969, 132970)
 Pre-deposited excess liquid Se provideshigh Se chemical potential to drive a direct and fast formation of the CZTSSephase, significantly reducing the amount of binary and ternary compounds withinphase evolution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 13.6, '%', 2],[120.0, 12.0, '%', 2],[125.0, 1, 'cm', 2]

Se
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133025, 133025)
 And organics removal can be accomplished via a synergisticoptimization of Se condensation and subsequent volatilization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 13.6, '%', 1],[65.0, 12.0, '%', 1],[70.0, 1, 'cm', 1]

C
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133047, 133047)
 We achieve ahigh-performance CZTSSe solar cell with a remarkable PCE<missing VAR> of 13.6%, and thehighest large-area PCE<missing VAR> of 12.0% (over 1cm2).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 13.6, '%', 0],[43.0, 12.0, '%', 0],[48.0, 1, 'cm', 0]

SSe
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133050, 133051)
 We achieve ahigh-performance CZTSSe solar cell with a remarkable PCE<missing VAR> of 13.6%, and thehighest large-area PCE<missing VAR> of 12.0% (over 1cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 13.6, '%', 0],[39.0, 12.0, '%', 0],[44.0, 1, 'cm', 0]

PC
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133063, 133064)
 We achieve ahigh-performance CZTSSe solar cell with a remarkable PCE<missing VAR> of 13.6%, and thehighest large-area PCE<missing VAR> of 12.0% (over 1cm2).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 13.6, '%', 0],[26.0, 12.0, '%', 0],[31.0, 1, 'cm', 0]

PC
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133084, 133085)
 We achieve ahigh-performance CZTSSe solar cell with a remarkable PCE<missing VAR> of 13.6%, and thehighest large-area PCE<missing VAR> of 12.0% (over 1cm2).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 13.6, '%', 0],[5.0, 12.0, '%', 0],[10.0, 1, 'cm', 0]

C
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133125, 133125)
 Our strategy will provide a newidea for further improving efficiency of CZTSSe solar cells via phase evolutionregulation, and also for other complicated multi-compound synthesis.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 13.6, '%', 1],[35.0, 12.0, '%', 1],[30.0, 1, 'cm', 1]

SSe
###Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Menghan Jiao,Bowen Zhang,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133128, 133129)
 Our strategy will provide a newidea for further improving efficiency of CZTSSe solar cells via phase evolutionregulation, and also for other complicated multi-compound synthesis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 13.6, '%', 1],[38.0, 12.0, '%', 1],[33.0, 1, 'cm', 1]

Sn
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133198, 133198)
 Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages ofenvironmental friendliness, low cost, and multi-scenario applications, and havedrawn extensive attention in recent years.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 12.63, '%', 5],[355.0, 13.2, '%', 5],[375.0, 538, 'mV', 5],[379.0, 0.7, ',', 5]

S
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133200, 133200)
 Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages ofenvironmental friendliness, low cost, and multi-scenario applications, and havedrawn extensive attention in recent years.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 12.63, '%', 5],[353.0, 13.2, '%', 5],[373.0, 538, 'mV', 5],[377.0, 0.7, ',', 5]

Se
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133203, 133203)
 Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages ofenvironmental friendliness, low cost, and multi-scenario applications, and havedrawn extensive attention in recent years.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 12.63, '%', 5],[350.0, 13.2, '%', 5],[370.0, 538, 'mV', 5],[374.0, 0.7, ',', 5]

C
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133208, 133208)
 Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages ofenvironmental friendliness, low cost, and multi-scenario applications, and havedrawn extensive attention in recent years.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 12.63, '%', 5],[345.0, 13.2, '%', 5],[365.0, 538, 'mV', 5],[369.0, 0.7, ',', 5]

Se
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133212, 133212)
 Flexible Cu2ZnSn(S, Se)4 (CZTSSe) solar cells take the advantages ofenvironmental friendliness, low cost, and multi-scenario applications, and havedrawn extensive attention in recent years.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 12.63, '%', 5],[341.0, 13.2, '%', 5],[361.0, 538, 'mV', 5],[365.0, 0.7, ',', 5]

C
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133314, 133314)
 Compared with rigid devices, thelack of alkali metal elements in the flexible substrate is the main factorlimiting the performance of flexible CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 12.63, '%', 4],[239.0, 13.2, '%', 4],[259.0, 538, 'mV', 4],[263.0, 0.7, ',', 4]

SSe
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133317, 133318)
 Compared with rigid devices, thelack of alkali metal elements in the flexible substrate is the main factorlimiting the performance of flexible CZTSSe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 12.63, '%', 4],[235.0, 13.2, '%', 4],[255.0, 538, 'mV', 4],[259.0, 0.7, ',', 4]

Rb
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133334, 133334)
 This work proposes aRb ion additive strategy to simultaneously regulate the CZTSSe film surfaceproperties and the CdS chemical bath deposition (CBD) processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 12.63, '%', 3],[219.0, 13.2, '%', 3],[239.0, 538, 'mV', 3],[243.0, 0.7, ',', 3]

C
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133350, 133350)
 This work proposes aRb ion additive strategy to simultaneously regulate the CZTSSe film surfaceproperties and the CdS chemical bath deposition (CBD) processes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 12.63, '%', 3],[203.0, 13.2, '%', 3],[223.0, 538, 'mV', 3],[227.0, 0.7, ',', 3]

SSe
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133353, 133354)
 This work proposes aRb ion additive strategy to simultaneously regulate the CZTSSe film surfaceproperties and the CdS chemical bath deposition (CBD) processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 12.63, '%', 3],[199.0, 13.2, '%', 3],[219.0, 538, 'mV', 3],[223.0, 0.7, ',', 3]

CdS
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133367, 133368)
 This work proposes aRb ion additive strategy to simultaneously regulate the CZTSSe film surfaceproperties and the CdS chemical bath deposition (CBD) processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 12.63, '%', 3],[185.0, 13.2, '%', 3],[205.0, 538, 'mV', 3],[209.0, 0.7, ',', 3]

CB
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133377, 133378)
 This work proposes aRb ion additive strategy to simultaneously regulate the CZTSSe film surfaceproperties and the CdS chemical bath deposition (CBD) processes.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 12.63, '%', 3],[175.0, 13.2, '%', 3],[195.0, 538, 'mV', 3],[199.0, 0.7, ',', 3]

Rb
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133398, 133398)
 Material andchemical characterization reveals that Rb ions can passivate the detrimentalSe0 cluster defect and additionally provide a more active surface for the CdSepitaxial growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 12.63, '%', 2],[155.0, 13.2, '%', 2],[175.0, 538, 'mV', 2],[179.0, 0.7, ',', 2]

Se0
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133411, 133412)
 Material andchemical characterization reveals that Rb ions can passivate the detrimentalSe0 cluster defect and additionally provide a more active surface for the CdSepitaxial growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 12.63, '%', 2],[141.0, 13.2, '%', 2],[161.0, 538, 'mV', 2],[165.0, 0.7, ',', 2]

CdS
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133436, 133437)
 Material andchemical characterization reveals that Rb ions can passivate the detrimentalSe0 cluster defect and additionally provide a more active surface for the CdSepitaxial growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 12.63, '%', 2],[116.0, 13.2, '%', 2],[136.0, 538, 'mV', 2],[140.0, 0.7, ',', 2]

Rb
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133448, 133448)
 Furthermore, Rb can also coordinate with thiourea (T<missing VAR>U) in theCBD<missing VAR> solution and improve the ion-by-ion deposition of the CdS layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 12.63, '%', 1],[105.0, 13.2, '%', 1],[125.0, 538, 'mV', 1],[129.0, 0.7, ',', 1]

U
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133462, 133462)
 Furthermore, Rb can also coordinate with thiourea (T<missing VAR>U) in theCBD<missing VAR> solution and improve the ion-by-ion deposition of the CdS layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 12.63, '%', 1],[91.0, 13.2, '%', 1],[111.0, 538, 'mV', 1],[115.0, 0.7, ',', 1]

CB
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133470, 133471)
 Furthermore, Rb can also coordinate with thiourea (T<missing VAR>U) in theCBD<missing VAR> solution and improve the ion-by-ion deposition of the CdS layer.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 12.63, '%', 1],[82.0, 13.2, '%', 1],[102.0, 538, 'mV', 1],[106.0, 0.7, ',', 1]

CdS
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133494, 133495)
 Furthermore, Rb can also coordinate with thiourea (T<missing VAR>U) in theCBD<missing VAR> solution and improve the ion-by-ion deposition of the CdS layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 12.63, '%', 1],[58.0, 13.2, '%', 1],[78.0, 538, 'mV', 1],[82.0, 0.7, ',', 1]

C
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133508, 133508)
 Finally,the flexible CZTSSe cell fabricated by this strategy has reached a hightotal-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOCand FF reaching 538 mV and 0.70, respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 12.63, '%', 0],[45.0, 13.2, '%', 0],[65.0, 538, 'mV', 0],[69.0, 0.7, ',', 0]

SSe
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133511, 133512)
 Finally,the flexible CZTSSe cell fabricated by this strategy has reached a hightotal-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOCand FF reaching 538 mV and 0.70, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 12.63, '%', 0],[41.0, 13.2, '%', 0],[61.0, 538, 'mV', 0],[65.0, 0.7, ',', 0]

VOC
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133562, 133564)
 Finally,the flexible CZTSSe cell fabricated by this strategy has reached a hightotal-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOCand FF reaching 538 mV and 0.70, respectively.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 12.63, '%', 0],[9.0, 13.2, '%', 0],[9.0, 538, 'mV', 0],[13.0, 0.7, ',', 0]

FF
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133569, 133570)
 Finally,the flexible CZTSSe cell fabricated by this strategy has reached a hightotal-area efficiency of 12.63% (active-area efficiency of 13.2%), with its VOCand FF reaching 538 mV and 0.70, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 12.63, '%', 0],[16.0, 13.2, '%', 0],[3.0, 538, 'mV', 0],[7.0, 0.7, ',', 0]

C
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133617, 133617)
 This work enriches the alkalimetal passivation strategies and provides new ideas for further improvingflexible CZTSSe solar cells in the future.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 12.63, '%', 1],[64.0, 13.2, '%', 1],[44.0, 538, 'mV', 1],[40.0, 0.7, ',', 1]

SSe
###Heterojunction interface regulation to realize high-performance flexible Kesterite solar cells|Xiao Xu,Jiazheng Zhou,Kang Yin,Jinlin Wang,Licheng Lou,Dongmei Li,Jiangjian Shi,Huijue Wu,Yanhong Luo,Qingbo Meng###
(133620, 133621)
 This work enriches the alkalimetal passivation strategies and provides new ideas for further improvingflexible CZTSSe solar cells in the future.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 12.63, '%', 1],[67.0, 13.2, '%', 1],[47.0, 538, 'mV', 1],[43.0, 0.7, ',', 1]

V
###Maximising and Stabilising Luminescence in Metal Halide Perovskite Device Structures|Mojtaba Abdi-Jalebi,Zahra Andaji-Garmaroudi,Stefania Cacovich,Camille Stavrakas,Bertrand Philippe,Johannes M. Richter,Mejd Alsari,Edward P. Booker,Eline M. Hutter,Andrew J. Pearson,Samuele Lilliu,Tom J Savenije,Håkan Rensmo,Giorgio Divitini,Caterina Ducati,Richard H. Friend,Samuel D. Stranks###
(133837, 133837)
 Furthermore, in mixed halide perovskite systemsdesigned for continuous bandgap tunability (bandgaps 1.7-1.9 e<missing VAR>V),photo-induced ion segregation leads to bandgap instabilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 100, '%', 1],[100.0, 66, '%', 2],[115.0, 95, '%', 2],[141.0, 40, 'cm', 3],[147.0, -1, ',', 3],[246.0, 15, '%', 4]

V
###Maximising and Stabilising Luminescence in Metal Halide Perovskite Device Structures|Mojtaba Abdi-Jalebi,Zahra Andaji-Garmaroudi,Stefania Cacovich,Camille Stavrakas,Bertrand Philippe,Johannes M. Richter,Mejd Alsari,Edward P. Booker,Eline M. Hutter,Andrew J. Pearson,Samuele Lilliu,Tom J Savenije,Håkan Rensmo,Giorgio Divitini,Caterina Ducati,Richard H. Friend,Samuel D. Stranks###
(133980, 133980)
 The high luminescence yields are achieved whilemaintaining high mobilities over 40 cm2V-1s<missing VAR>-1, giving the elusive combinationof both high luminescence and excellent charge transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 100, '%', 4],[43.0, 66, '%', 1],[28.0, 95, '%', 1],[2.0, 40, 'cm', 0],[4.0, -1, ',', 0],[103.0, 15, '%', 1]

Ds
###Maximising and Stabilising Luminescence in Metal Halide Perovskite Device Structures|Mojtaba Abdi-Jalebi,Zahra Andaji-Garmaroudi,Stefania Cacovich,Camille Stavrakas,Bertrand Philippe,Johannes M. Richter,Mejd Alsari,Edward P. Booker,Eline M. Hutter,Andrew J. Pearson,Samuele Lilliu,Tom J Savenije,Håkan Rensmo,Giorgio Divitini,Caterina Ducati,Richard H. Friend,Samuel D. Stranks###
(134250, 134250)
Our work represents a critical breakthrough in the construction of tunablehalide perovskite films and interfaces that can approach the efficiency limitsin tandem solar cells and coloured LEDs.
EXCEPTION 3: IndexError for Ds
[458.0, 100, '%', 8],[313.0, 66, '%', 5],[298.0, 95, '%', 5],[272.0, 40, 'cm', 4],[266.0, -1, ',', 4],[167.0, 15, '%', 3]

P
###Efficient and environmental-friendly perovskite solar cells via embedding plasmonic nanoparticles: an optical simulation study on realistic device architecture|George Perrakis,George Kakavelakis,George Kenanakis,Constantinos Petridis,Emmanuel Stratakis,Maria Kafesaki,Emmanuel Kymakis###
(134676, 134676)
 Interestingly, the combination of silver spheres inperovskite and aluminum spheres inside the hole transporting layer (PEDOT<missing VAR>PSS)of the solar cell leads to an even further enhancement, of up to 12%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 7.3, '%', 1],[38.0, 12, '%', 0]

O
###Efficient and environmental-friendly perovskite solar cells via embedding plasmonic nanoparticles: an optical simulation study on realistic device architecture|George Perrakis,George Kakavelakis,George Kenanakis,Constantinos Petridis,Emmanuel Stratakis,Maria Kafesaki,Emmanuel Kymakis###
(134679, 134679)
 Interestingly, the combination of silver spheres inperovskite and aluminum spheres inside the hole transporting layer (PEDOT<missing VAR>PSS)of the solar cell leads to an even further enhancement, of up to 12%.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 7.3, '%', 1],[35.0, 12, '%', 0]

S
###Efficient and environmental-friendly perovskite solar cells via embedding plasmonic nanoparticles: an optical simulation study on realistic device architecture|George Perrakis,George Kakavelakis,George Kenanakis,Constantinos Petridis,Emmanuel Stratakis,Maria Kafesaki,Emmanuel Kymakis###
(134683, 134683)
 Interestingly, the combination of silver spheres inperovskite and aluminum spheres inside the hole transporting layer (PEDOT<missing VAR>PSS)of the solar cell leads to an even further enhancement, of up to 12%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 7.3, '%', 1],[31.0, 12, '%', 0]

PSCs
###Efficient and environmental-friendly perovskite solar cells via embedding plasmonic nanoparticles: an optical simulation study on realistic device architecture|George Perrakis,George Kakavelakis,George Kenanakis,Constantinos Petridis,Emmanuel Stratakis,Maria Kafesaki,Emmanuel Kymakis###
(134741, 134743)
 Thisapproach allows the employment of much thinner perovskite layers in PSCs (up to150 nm) to reach the same photocurrent as the nanoparticles-free device andreducing thus significantly the toxicity of the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 7.3, '%', 2],[27.0, 12, '%', 1]

PSCs
###Efficient and environmental-friendly perovskite solar cells via embedding plasmonic nanoparticles: an optical simulation study on realistic device architecture|George Perrakis,George Kakavelakis,George Kenanakis,Constantinos Petridis,Emmanuel Stratakis,Maria Kafesaki,Emmanuel Kymakis###
(134834, 134836)
 Providing therequirements related to the size, shape, position, composition, andconcentration of nanoparticles for the PSCs photocurrent enhancement, our studyestablishes guidelines for a future development of highly-efficient,environmentally friendly and low-cost plasmonic perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 7.3, '%', 3],[120.0, 12, '%', 2]

I
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(134924, 134924)
Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 16, '%', 1]

NS
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(134927, 134928)
Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 16, '%', 1]

(NP)
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(134939, 134942)
 The efficiency of nanoparticle (NP) solar cells has grown impressively inrecent years, exceeding 16%.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 16, '%', 0]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(134979, 134980)
 However, the carrier mobility in NP solar cells,and in other optoelectronic applications remains low, thus critically limitingtheir performance.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 16, '%', 1]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135024, 135025)
 Therefore, carrier transport in NP solids needs to be betterunderstood to further improve the overall efficiency of NP solar celltechnology.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 16, '%', 2]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135054, 135055)
 Therefore, carrier transport in NP solids needs to be betterunderstood to further improve the overall efficiency of NP solar celltechnology.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 16, '%', 2]

I
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135140, 135140)
 To rise to this challenge, here we report thedevelopment of TRIDENS the Transport in Defected Nanoparticle SolidsSimulator, that adds three more hierarchical layers to our previously developedHINT<missing VAR>S code for nanoparticle solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 16, '%', 4]

NS
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135143, 135144)
 To rise to this challenge, here we report thedevelopment of TRIDENS the Transport in Defected Nanoparticle SolidsSimulator, that adds three more hierarchical layers to our previously developedHINT<missing VAR>S code for nanoparticle solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 16, '%', 4]

HIN
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135183, 135185)
 To rise to this challenge, here we report thedevelopment of TRIDENS the Transport in Defected Nanoparticle SolidsSimulator, that adds three more hierarchical layers to our previously developedHINT<missing VAR>S code for nanoparticle solar cells.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 16, '%', 4]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135187, 135187)
 To rise to this challenge, here we report thedevelopment of TRIDENS the Transport in Defected Nanoparticle SolidsSimulator, that adds three more hierarchical layers to our previously developedHINT<missing VAR>S code for nanoparticle solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 16, '%', 4]

In
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135200, 135200)
 In TRIDENS, we first introduced planardefects, such as twin planes and grain boundaries into individual NP SLs thatcomprised the order of 103 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 16, '%', 5]

I
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135204, 135204)
 In TRIDENS, we first introduced planardefects, such as twin planes and grain boundaries into individual NP SLs thatcomprised the order of 103 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 16, '%', 5]

NS
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135207, 135208)
 In TRIDENS, we first introduced planardefects, such as twin planes and grain boundaries into individual NP SLs thatcomprised the order of 103 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 16, '%', 5]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135241, 135242)
 In TRIDENS, we first introduced planardefects, such as twin planes and grain boundaries into individual NP SLs thatcomprised the order of 103 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 16, '%', 5]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135244, 135244)
 In TRIDENS, we first introduced planardefects, such as twin planes and grain boundaries into individual NP SLs thatcomprised the order of 103 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 16, '%', 5]

N
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135261, 135261)
 In TRIDENS, we first introduced planardefects, such as twin planes and grain boundaries into individual NP SLs thatcomprised the order of 103 NPs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 16, '%', 5]

HIN
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135271, 135273)
 Then we used HINT<missing VAR>S to simulate the transportacross tens of thousands of defected NP SLs, and constructed the distributionof the NP SL<missing VAR> mobilities with planar defects.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 16, '%', 6]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135275, 135275)
 Then we used HINT<missing VAR>S to simulate the transportacross tens of thousands of defected NP SLs, and constructed the distributionof the NP SL<missing VAR> mobilities with planar defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 16, '%', 6]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135298, 135299)
 Then we used HINT<missing VAR>S to simulate the transportacross tens of thousands of defected NP SLs, and constructed the distributionof the NP SL<missing VAR> mobilities with planar defects.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 16, '%', 6]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135301, 135301)
 Then we used HINT<missing VAR>S to simulate the transportacross tens of thousands of defected NP SLs, and constructed the distributionof the NP SL<missing VAR> mobilities with planar defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 16, '%', 6]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135318, 135319)
 Then we used HINT<missing VAR>S to simulate the transportacross tens of thousands of defected NP SLs, and constructed the distributionof the NP SL<missing VAR> mobilities with planar defects.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 16, '%', 6]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135321, 135321)
 Then we used HINT<missing VAR>S to simulate the transportacross tens of thousands of defected NP SLs, and constructed the distributionof the NP SL<missing VAR> mobilities with planar defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 16, '%', 6]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135340, 135341)
 Second, the defected NP SLs wereassembled into a resistor network with more than 104 NP SLs, thus representingabout 107 individual NPs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 16, '%', 7]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135343, 135343)
 Second, the defected NP SLs wereassembled into a resistor network with more than 104 NP SLs, thus representingabout 107 individual NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 16, '%', 7]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135368, 135369)
 Second, the defected NP SLs wereassembled into a resistor network with more than 104 NP SLs, thus representingabout 107 individual NPs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 16, '%', 7]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135371, 135371)
 Second, the defected NP SLs wereassembled into a resistor network with more than 104 NP SLs, thus representingabout 107 individual NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[407.0, 16, '%', 7]

N
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135387, 135387)
 Second, the defected NP SLs wereassembled into a resistor network with more than 104 NP SLs, thus representingabout 107 individual NPs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 16, '%', 7]

I
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135398, 135398)
 Finally, the TRIDENS results were analyzed by finitesize scaling to explore whether the percolation transition, separating thephase where the low mobility defected NP SLs percolate, from the phase wherethe high mobility undefected NP SLs percolate drives alow-mobility-to-high-mobility transport crossover that can be extrapolated tomacroscopic length scales.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[434.0, 16, '%', 8]

NS
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135401, 135402)
 Finally, the TRIDENS results were analyzed by finitesize scaling to explore whether the percolation transition, separating thephase where the low mobility defected NP SLs percolate, from the phase wherethe high mobility undefected NP SLs percolate drives alow-mobility-to-high-mobility transport crossover that can be extrapolated tomacroscopic length scales.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[437.0, 16, '%', 8]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135449, 135450)
 Finally, the TRIDENS results were analyzed by finitesize scaling to explore whether the percolation transition, separating thephase where the low mobility defected NP SLs percolate, from the phase wherethe high mobility undefected NP SLs percolate drives alow-mobility-to-high-mobility transport crossover that can be extrapolated tomacroscopic length scales.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[485.0, 16, '%', 8]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135452, 135452)
 Finally, the TRIDENS results were analyzed by finitesize scaling to explore whether the percolation transition, separating thephase where the low mobility defected NP SLs percolate, from the phase wherethe high mobility undefected NP SLs percolate drives alow-mobility-to-high-mobility transport crossover that can be extrapolated tomacroscopic length scales.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[488.0, 16, '%', 8]

NP
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135475, 135476)
 Finally, the TRIDENS results were analyzed by finitesize scaling to explore whether the percolation transition, separating thephase where the low mobility defected NP SLs percolate, from the phase wherethe high mobility undefected NP SLs percolate drives alow-mobility-to-high-mobility transport crossover that can be extrapolated tomacroscopic length scales.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[511.0, 16, '%', 8]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135478, 135478)
 Finally, the TRIDENS results were analyzed by finitesize scaling to explore whether the percolation transition, separating thephase where the low mobility defected NP SLs percolate, from the phase wherethe high mobility undefected NP SLs percolate drives alow-mobility-to-high-mobility transport crossover that can be extrapolated tomacroscopic length scales.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[514.0, 16, '%', 8]

S
###Describing transport in defected nanoparticle solids using a new, hierarchical, simulation tool, TRIDENS|Chase Hansen,Davis Unruh,Miguel Alba,Caroline Qian,Alex Abelson,Matt Law,Gergely T. Zimanyi###
(135561, 135561)
 Wedemonstrated that the E<missing VAR>S bimodal theorys<missing VAR> two-variable scaling function is aneffective tool to quantitatively characterize thislow-mobility-to-high-mobility transport crossover.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[597.0, 16, '%', 10]

GaAs/AlGaAs
###Two-dimensional GaAs/AlGaAs superlattice structures for solar cell applications: ultimate efficiency estimation|Jaroslaw Klos,Maciej Krawczyk###
(135621, 135626)
Two-dimensional GaAs/AlGaAs superlattice structures for solar cell applications ultimate efficiency estimation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs/AlGaAs
###Two-dimensional GaAs/AlGaAs superlattice structures for solar cell applications: ultimate efficiency estimation|Jaroslaw Klos,Maciej Krawczyk###
(135665, 135670)
 We calculate the band structure of a two-dimensional GaAs/AlGaAs superlatticeand estimate the ultimate efficiency of solar cells using this type ofstructure for solar energy conversion.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Al
###Two-dimensional GaAs/AlGaAs superlattice structures for solar cell applications: ultimate efficiency estimation|Jaroslaw Klos,Maciej Krawczyk###
(135800, 135800)
 The ultimate efficiency is determined versusstructural parameters including the filling fraction, the superlatticeconstant, the rod geometry and the concentration of Al in the matrix material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OPV)
###Unraveling the Role of Morphology on Organic Solar Cell Performance|Biswajit Ray,Pradeep R. Nair,Muhammad A. Alam###
(135904, 135908)
 Polymer based organic photovoltaic (OPV) technology offers a relativelyinexpensive option for solar energy conversion provided its efficiencyincreases beyond the current level (6-7%) along with significant improvementsin operational lifetime.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, -7, '%', 0]

In
###Unraveling the Role of Morphology on Organic Solar Cell Performance|Biswajit Ray,Pradeep R. Nair,Muhammad A. Alam###
(136102, 136102)
 In this article, we develop a uniqueprocess-device co-simulation framework based on phase-field model for phaseseparation coupled with self-consistent drift-diffusion transport toquantitatively explore the effects of the process conditions (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, -7, '%', 3]

In
###Unraveling the Role of Morphology on Organic Solar Cell Performance|Biswajit Ray,Pradeep R. Nair,Muhammad A. Alam###
(136272, 136272)
 In addition to providing anoptimization framework for OPV technology, our morphology-aware modelingapproach is ideally suited for a wide class of problems involving porousmaterials, block co-polymers, polymer colloids, OLED devices etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, -7, '%', 6]

OPV
###Unraveling the Role of Morphology on Organic Solar Cell Performance|Biswajit Ray,Pradeep R. Nair,Muhammad A. Alam###
(136289, 136291)
 In addition to providing anoptimization framework for OPV technology, our morphology-aware modelingapproach is ideally suited for a wide class of problems involving porousmaterials, block co-polymers, polymer colloids, OLED devices etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, -7, '%', 6]

O
###Unraveling the Role of Morphology on Organic Solar Cell Performance|Biswajit Ray,Pradeep R. Nair,Muhammad A. Alam###
(136345, 136345)
 In addition to providing anoptimization framework for OPV technology, our morphology-aware modelingapproach is ideally suited for a wide class of problems involving porousmaterials, block co-polymers, polymer colloids, OLED devices etc.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, -7, '%', 6]

CdSe
###A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells|Yu Ye,Lin Gan,Lun Dai,Yu Dai,Xuefeng Guo,Hu Meng,Bin Yu,Zujin Shi,Guogang Qin###
(136385, 136386)
A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 0.51, 'V', 4],[283.0, 2, ',', 4],[298.0, 1.25, '%', 4]

Si
###A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells|Yu Ye,Lin Gan,Lun Dai,Yu Dai,Xuefeng Guo,Hu Meng,Bin Yu,Zujin Shi,Guogang Qin###
(136504, 136504)
 Thismethod, with the merits of high pattern resolution and high alignmentaccuracy, free from additional etching or harsh process, universal to arbitrarysubstrates, compatible to Si microelectronic technology, can be easily appliedto diverse graphene-based devices, especially in array-based applications,where large-scale graphene patterns are desired.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.51, 'V', 2],[165.0, 2, ',', 2],[180.0, 1.25, '%', 2]

CdSe
###A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells|Yu Ye,Lin Gan,Lun Dai,Yu Dai,Xuefeng Guo,Hu Meng,Bin Yu,Zujin Shi,Guogang Qin###
(136573, 136574)
 We have applied this method tofabricate CdSe nanobelt (NB)/graphene Schottky junction solar cells, which havepotential application in integrated nano-optoelectronic systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.51, 'V', 1],[95.0, 2, ',', 1],[110.0, 1.25, '%', 1]

(NB)
###A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells|Yu Ye,Lin Gan,Lun Dai,Yu Dai,Xuefeng Guo,Hu Meng,Bin Yu,Zujin Shi,Guogang Qin###
(136578, 136581)
 We have applied this method tofabricate CdSe nanobelt (NB)/graphene Schottky junction solar cells, which havepotential application in integrated nano-optoelectronic systems.
Featurization successful!
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.51, 'V', 1],[88.0, 2, ',', 1],[103.0, 1.25, '%', 1]

CdSe
###A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells|Yu Ye,Lin Gan,Lun Dai,Yu Dai,Xuefeng Guo,Hu Meng,Bin Yu,Zujin Shi,Guogang Qin###
(136737, 136738)
 We attribute the highperformance of the cell to the as-patterned high-performance graphene, whichcan form an ideal Schottky contact with CdSe NB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0.51, 'V', 1],[68.0, 2, ',', 1],[53.0, 1.25, '%', 1]

NB
###A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells|Yu Ye,Lin Gan,Lun Dai,Yu Dai,Xuefeng Guo,Hu Meng,Bin Yu,Zujin Shi,Guogang Qin###
(136740, 136741)
 We attribute the highperformance of the cell to the as-patterned high-performance graphene, whichcan form an ideal Schottky contact with CdSe NB.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0.51, 'V', 1],[71.0, 2, ',', 1],[56.0, 1.25, '%', 1]

CdSe
###A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells|Yu Ye,Lin Gan,Lun Dai,Yu Dai,Xuefeng Guo,Hu Meng,Bin Yu,Zujin Shi,Guogang Qin###
(136771, 136772)
 Our results suggest both thedeveloped graphene patterning method and the as-fabricated CdSe nanobelt(NB)/graphene Schottky junction solar cells have reachable applicationprospect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.51, 'V', 2],[102.0, 2, ',', 2],[87.0, 1.25, '%', 2]

(NB)
###A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells|Yu Ye,Lin Gan,Lun Dai,Yu Dai,Xuefeng Guo,Hu Meng,Bin Yu,Zujin Shi,Guogang Qin###
(136777, 136780)
 Our results suggest both thedeveloped graphene patterning method and the as-fabricated CdSe nanobelt(NB)/graphene Schottky junction solar cells have reachable applicationprospect.
Featurization successful!
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 0.51, 'V', 2],[108.0, 2, ',', 2],[93.0, 1.25, '%', 2]

In
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(136941, 136941)
 In this work weexperimentally study the effects of different graphene-based ETLs in sensitizedM<missing VAR>API solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(136977, 136978)
 In this work weexperimentally study the effects of different graphene-based ETLs in sensitizedM<missing VAR>API solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137021, 137022)
 By means of time-integrated and picosecond time-resolvedphotoluminescence techniques, the carrier recombination dynamics in M<missing VAR>API filmsembedded in different ETLs is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137051, 137053)
 Using graphene doped mesoporousTiO2 (G+mTiO2) with the addition of a lithium-neutralized graphene oxide(G<missing VAR>O-Li) interlayer as ETL, we find that the carrier collection efficiency isincreased by about a factor two with respect to standard m<missing VAR>TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137060, 137061)
 Using graphene doped mesoporousTiO2 (G+mTiO2) with the addition of a lithium-neutralized graphene oxide(G<missing VAR>O-Li) interlayer as ETL, we find that the carrier collection efficiency isincreased by about a factor two with respect to standard m<missing VAR>TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137085, 137085)
 Using graphene doped mesoporousTiO2 (G+mTiO2) with the addition of a lithium-neutralized graphene oxide(G<missing VAR>O-Li) interlayer as ETL, we find that the carrier collection efficiency isincreased by about a factor two with respect to standard m<missing VAR>TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137087, 137087)
 Using graphene doped mesoporousTiO2 (G+mTiO2) with the addition of a lithium-neutralized graphene oxide(G<missing VAR>O-Li) interlayer as ETL, we find that the carrier collection efficiency isincreased by about a factor two with respect to standard m<missing VAR>TiO2.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137137, 137139)
 Using graphene doped mesoporousTiO2 (G+mTiO2) with the addition of a lithium-neutralized graphene oxide(G<missing VAR>O-Li) interlayer as ETL, we find that the carrier collection efficiency isincreased by about a factor two with respect to standard m<missing VAR>TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137166, 137167)
 Takingadvantage of the absorption coefficient dispersion, we probe the M<missing VAR>API layermorphology, along the thickness, finding that the M<missing VAR>API embedded in the ETLcomposed by G+mTiO2 plus G<missing VAR>O-Li brings to a very good crystalline quality of theM<missing VAR>API layer with a trap density about one order of magnitude lower than thatfound with the other ETLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137190, 137191)
 Takingadvantage of the absorption coefficient dispersion, we probe the M<missing VAR>API layermorphology, along the thickness, finding that the M<missing VAR>API embedded in the ETLcomposed by G+mTiO2 plus G<missing VAR>O-Li brings to a very good crystalline quality of theM<missing VAR>API layer with a trap density about one order of magnitude lower than thatfound with the other ETLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137211, 137213)
 Takingadvantage of the absorption coefficient dispersion, we probe the M<missing VAR>API layermorphology, along the thickness, finding that the M<missing VAR>API embedded in the ETLcomposed by G+mTiO2 plus G<missing VAR>O-Li brings to a very good crystalline quality of theM<missing VAR>API layer with a trap density about one order of magnitude lower than thatfound with the other ETLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137218, 137218)
 Takingadvantage of the absorption coefficient dispersion, we probe the M<missing VAR>API layermorphology, along the thickness, finding that the M<missing VAR>API embedded in the ETLcomposed by G+mTiO2 plus G<missing VAR>O-Li brings to a very good crystalline quality of theM<missing VAR>API layer with a trap density about one order of magnitude lower than thatfound with the other ETLs.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137220, 137220)
 Takingadvantage of the absorption coefficient dispersion, we probe the M<missing VAR>API layermorphology, along the thickness, finding that the M<missing VAR>API embedded in the ETLcomposed by G+mTiO2 plus G<missing VAR>O-Li brings to a very good crystalline quality of theM<missing VAR>API layer with a trap density about one order of magnitude lower than thatfound with the other ETLs.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137243, 137244)
 Takingadvantage of the absorption coefficient dispersion, we probe the M<missing VAR>API layermorphology, along the thickness, finding that the M<missing VAR>API embedded in the ETLcomposed by G+mTiO2 plus G<missing VAR>O-Li brings to a very good crystalline quality of theM<missing VAR>API layer with a trap density about one order of magnitude lower than thatfound with the other ETLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137286, 137286)
 In addition, this ETL freezes M<missing VAR>API at the tetragonalphase, regardless of the temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Graphene-based electron transport layers in perovskite solar cells: a step-up for an efficient carrier collection|F. Biccari,F. Gabelloni,E. Burzi,M. Gurioli,S. Pescetelli,A. Agresti,A. E. Del Rio Castillo,A. Ansaldo,E. Kymakis,F. Bonaccorso,A. Di Carlo,A. Vinattieri###
(137301, 137302)
 In addition, this ETL freezes M<missing VAR>API at the tetragonalphase, regardless of the temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137383, 137388)
Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4/CdS
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137442, 137450)
 We present evidence that band gap narrowing at the heterointerface may be amajor cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdSsolar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu2ZnSnS4
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137481, 137486)
 Band gap narrowing is caused by surface states that extend theCu2ZnSnS4 valence band into the forbidden gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137516, 137521)
 Those surface states areconsistently found in Cu2ZnSnS4, but not in Cu2ZnSnSe4, byfirst-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnSe4
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137530, 137535)
 Those surface states areconsistently found in Cu2ZnSnS4, but not in Cu2ZnSnSe4, byfirst-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137579, 137584)
 They do not simply arise from defects atsurfaces but are an intrinsic feature of Cu2ZnSnS4 surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137632, 137637)
 By includingthose states in a device model, the outcome of previously publishedtemperature-dependent open circuit voltage measurements on Cu2ZnSnS4solar cells can be reproduced quantitatively without necessarily assuming acliff-like conduction band offset with the CdS buffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137675, 137676)
 By includingthose states in a device model, the outcome of previously publishedtemperature-dependent open circuit voltage measurements on Cu2ZnSnS4solar cells can be reproduced quantitatively without necessarily assuming acliff-like conduction band offset with the CdS buffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137696, 137696)
 Ourfirst-principles calculations indicate that Zn-based alternative buffer layersare advantageous due to the ability of Zn to passivate those surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137721, 137721)
 Ourfirst-principles calculations indicate that Zn-based alternative buffer layersare advantageous due to the ability of Zn to passivate those surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137743, 137743)
Focusing future research on Zn-based buffers is expected to significantlyimprove the open circuit voltage and efficiency of pure-sulfide Cu2ZnSnS4solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4
###Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells|Andrea Crovetto,Mattias Palsgaard,Tue Gunst,Troels Markussen,Kurt Stokbro,Mads Brandbyge,Ole Hansen###
(137778, 137783)
Focusing future research on Zn-based buffers is expected to significantlyimprove the open circuit voltage and efficiency of pure-sulfide Cu2ZnSnS4solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(137900, 137900)
 We studied the recombination dynamics of charge carriers in organic bulkheterojunction solar cells made of the blend system poly(2,5-bis(3-dodecylthiophen-2-yl) thieno[2,3-b]thiophene) (pBTCT<missing VAR>-C12)[6,6]-phenyl-C61-butyricacid methyl ester (PC61BM) with a donor--acceptor ratio of 11 and 14.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, ',', 0],[13.0, 2, ',', 0],[7.0, 6, ',', 0],[350.0, 300, 'K', 5]

C12
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(137903, 137904)
 We studied the recombination dynamics of charge carriers in organic bulkheterojunction solar cells made of the blend system poly(2,5-bis(3-dodecylthiophen-2-yl) thieno[2,3-b]thiophene) (pBTCT<missing VAR>-C12)[6,6]-phenyl-C61-butyricacid methyl ester (PC61BM) with a donor--acceptor ratio of 11 and 14.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, ',', 0],[16.0, 2, ',', 0],[3.0, 6, ',', 0],[346.0, 300, 'K', 5]

C61
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(137914, 137915)
 We studied the recombination dynamics of charge carriers in organic bulkheterojunction solar cells made of the blend system poly(2,5-bis(3-dodecylthiophen-2-yl) thieno[2,3-b]thiophene) (pBTCT<missing VAR>-C12)[6,6]-phenyl-C61-butyricacid methyl ester (PC61BM) with a donor--acceptor ratio of 11 and 14.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, ',', 0],[27.0, 2, ',', 0],[7.0, 6, ',', 0],[335.0, 300, 'K', 5]

PC61B
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(137927, 137930)
 We studied the recombination dynamics of charge carriers in organic bulkheterojunction solar cells made of the blend system poly(2,5-bis(3-dodecylthiophen-2-yl) thieno[2,3-b]thiophene) (pBTCT<missing VAR>-C12)[6,6]-phenyl-C61-butyricacid methyl ester (PC61BM) with a donor--acceptor ratio of 11 and 14.
Featurization terminated normally.
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2, ',', 0],[40.0, 2, ',', 0],[20.0, 6, ',', 0],[320.0, 300, 'K', 5]

C
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(137981, 137981)
 Thetechniques of charge carrier extraction by linearly increasing voltage(photo-CELIV) and, as local probe, time-resolved microwave conductivity (TRMC)were used.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 2, ',', 1],[94.0, 2, ',', 1],[74.0, 6, ',', 1],[269.0, 300, 'K', 4]

V
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(137985, 137985)
 Thetechniques of charge carrier extraction by linearly increasing voltage(photo-CELIV) and, as local probe, time-resolved microwave conductivity (TRMC)were used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, ',', 1],[98.0, 2, ',', 1],[78.0, 6, ',', 1],[265.0, 300, 'K', 4]

C
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(138010, 138010)
 Thetechniques of charge carrier extraction by linearly increasing voltage(photo-CELIV) and, as local probe, time-resolved microwave conductivity (TRMC)were used.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2, ',', 1],[123.0, 2, ',', 1],[103.0, 6, ',', 1],[240.0, 300, 'K', 4]

C
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(138048, 138048)
 We observed a difference in the initially extracted charge carrierconcentration in the photo-CELIV experiment by one order of magnitude, which weassigned to an enhanced geminate recombination due to a fine interpenetratingnetwork with isolated phase regions in the 11 pBTCT<missing VAR>-C12PC61BM<missing VAR> bulkheterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, ',', 2],[161.0, 2, ',', 2],[141.0, 6, ',', 2],[202.0, 300, 'K', 3]

IV
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(138051, 138052)
 We observed a difference in the initially extracted charge carrierconcentration in the photo-CELIV experiment by one order of magnitude, which weassigned to an enhanced geminate recombination due to a fine interpenetratingnetwork with isolated phase regions in the 11 pBTCT<missing VAR>-C12PC61BM<missing VAR> bulkheterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, ',', 2],[164.0, 2, ',', 2],[144.0, 6, ',', 2],[198.0, 300, 'K', 3]

C
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(138115, 138115)
 We observed a difference in the initially extracted charge carrierconcentration in the photo-CELIV experiment by one order of magnitude, which weassigned to an enhanced geminate recombination due to a fine interpenetratingnetwork with isolated phase regions in the 11 pBTCT<missing VAR>-C12PC61BM<missing VAR> bulkheterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, ',', 2],[228.0, 2, ',', 2],[208.0, 6, ',', 2],[135.0, 300, 'K', 3]

C12PC61B
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(138118, 138123)
 We observed a difference in the initially extracted charge carrierconcentration in the photo-CELIV experiment by one order of magnitude, which weassigned to an enhanced geminate recombination due to a fine interpenetratingnetwork with isolated phase regions in the 11 pBTCT<missing VAR>-C12PC61BM<missing VAR> bulkheterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0.013333333333333334,0.9733333333333334,0,0,0,0,0,0,0,0,0.013333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 2, ',', 2],[231.0, 2, ',', 2],[211.0, 6, ',', 2],[127.0, 300, 'K', 3]

In
###Influence of Phase Segregation on Recombination Dynamics in Organic Bulk-Heterojunction Solar Cells|Andreas Baumann,Tom J. Savenije,Dharmapura Hanumantharaya K. Murthy,Martin Heeney,Vladimir Dyakonov,Carsten Deibel###
(138136, 138136)
 In contrast, extensive phase segregation in 14blend devices leads to an efficient polaron generation resulting in anincreased short circuit current density of the solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 2, ',', 3],[249.0, 2, ',', 3],[229.0, 6, ',', 3],[114.0, 300, 'K', 2]

BH
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138365, 138366)
 Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallicnitride endohedral fullerene 1-[3-(2-ethyl)hexoxycarbonyl]propyl-1-phenyl-Lu3NC80 (Lu3NC80-PCBE<missing VAR>H) show an open circuit voltage(VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acidmethyl ester (PC61BM).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.3, 'V', 0],[93.0, 6, ',', 0],[336.0, 2, 'times', 4]

Lu3NC80
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138410, 138414)
 Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallicnitride endohedral fullerene 1-[3-(2-ethyl)hexoxycarbonyl]propyl-1-phenyl-Lu3NC80 (Lu3NC80-PCBE<missing VAR>H) show an open circuit voltage(VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acidmethyl ester (PC61BM).
Featurization terminated normally.
0,0,0,0,0,0.9523809523809523,0.011904761904761904,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.3, 'V', 0],[45.0, 6, ',', 0],[288.0, 2, 'times', 4]

Lu3NC80
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138417, 138421)
 Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallicnitride endohedral fullerene 1-[3-(2-ethyl)hexoxycarbonyl]propyl-1-phenyl-Lu3NC80 (Lu3NC80-PCBE<missing VAR>H) show an open circuit voltage(VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acidmethyl ester (PC61BM).
Featurization terminated normally.
0,0,0,0,0,0.9523809523809523,0.011904761904761904,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.3, 'V', 0],[38.0, 6, ',', 0],[281.0, 2, 'times', 4]

PCB
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138423, 138425)
 Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallicnitride endohedral fullerene 1-[3-(2-ethyl)hexoxycarbonyl]propyl-1-phenyl-Lu3NC80 (Lu3NC80-PCBE<missing VAR>H) show an open circuit voltage(VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acidmethyl ester (PC61BM).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.3, 'V', 0],[34.0, 6, ',', 0],[277.0, 2, 'times', 4]

H
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138427, 138427)
 Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallicnitride endohedral fullerene 1-[3-(2-ethyl)hexoxycarbonyl]propyl-1-phenyl-Lu3NC80 (Lu3NC80-PCBE<missing VAR>H) show an open circuit voltage(VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acidmethyl ester (PC61BM).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.3, 'V', 0],[32.0, 6, ',', 0],[275.0, 2, 'times', 4]

(VOC)
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138441, 138445)
 Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallicnitride endohedral fullerene 1-[3-(2-ethyl)hexoxycarbonyl]propyl-1-phenyl-Lu3NC80 (Lu3NC80-PCBE<missing VAR>H) show an open circuit voltage(VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acidmethyl ester (PC61BM).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 0.3, 'V', 0],[14.0, 6, ',', 0],[257.0, 2, 'times', 4]

C
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138466, 138466)
 Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallicnitride endohedral fullerene 1-[3-(2-ethyl)hexoxycarbonyl]propyl-1-phenyl-Lu3NC80 (Lu3NC80-PCBE<missing VAR>H) show an open circuit voltage(VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acidmethyl ester (PC61BM).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.3, 'V', 0],[7.0, 6, ',', 0],[236.0, 2, 'times', 4]

PC61B
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138481, 138484)
 Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallicnitride endohedral fullerene 1-[3-(2-ethyl)hexoxycarbonyl]propyl-1-phenyl-Lu3NC80 (Lu3NC80-PCBE<missing VAR>H) show an open circuit voltage(VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acidmethyl ester (PC61BM).
Featurization terminated normally.
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.3, 'V', 0],[22.0, 6, ',', 0],[218.0, 2, 'times', 4]

PC
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138523, 138524)
 To fully exploit the potential of this acceptor moleculewith respect to the power conversion efficiency (PCE) of solar cells, the shortcircuit current (J<missing VAR>SC) should be improved to become competitive with the stateof the art solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.3, 'V', 1],[64.0, 6, ',', 1],[178.0, 2, 'times', 3]

C
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138547, 138547)
 To fully exploit the potential of this acceptor moleculewith respect to the power conversion efficiency (PCE) of solar cells, the shortcircuit current (J<missing VAR>SC) should be improved to become competitive with the stateof the art solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0.3, 'V', 1],[88.0, 6, ',', 1],[155.0, 2, 'times', 3]

SC
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138594, 138595)
 Here, we address factors influencing the J<missing VAR>SC in blendscontaining the high voltage absorber Lu3NC80-PCBE<missing VAR>H in view of bothphotogeneration but also transport and extraction of charge carriers.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.3, 'V', 2],[135.0, 6, ',', 2],[107.0, 2, 'times', 2]

Lu3NC80
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138612, 138616)
 Here, we address factors influencing the J<missing VAR>SC in blendscontaining the high voltage absorber Lu3NC80-PCBE<missing VAR>H in view of bothphotogeneration but also transport and extraction of charge carriers.
Featurization terminated normally.
0,0,0,0,0,0.9523809523809523,0.011904761904761904,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0.3, 'V', 2],[153.0, 6, ',', 2],[86.0, 2, 'times', 2]

PCB
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138618, 138620)
 Here, we address factors influencing the J<missing VAR>SC in blendscontaining the high voltage absorber Lu3NC80-PCBE<missing VAR>H in view of bothphotogeneration but also transport and extraction of charge carriers.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.3, 'V', 2],[159.0, 6, ',', 2],[82.0, 2, 'times', 2]

H
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138622, 138622)
 Here, we address factors influencing the J<missing VAR>SC in blendscontaining the high voltage absorber Lu3NC80-PCBE<missing VAR>H in view of bothphotogeneration but also transport and extraction of charge carriers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.3, 'V', 2],[163.0, 6, ',', 2],[80.0, 2, 'times', 2]

In
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138680, 138680)
In blends containing Lu3NC80-PCBE<missing VAR>H, we found 2 times weaker photoluminescencequenching, remainders of interchain excitons, and, most remarkably, tripletexcitons formed on the polymer chain, which were absent in the referenceP3HT<missing VAR>PC61BM<missing VAR> blends.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 0.3, 'V', 4],[221.0, 6, ',', 4],[22.0, 2, 'times', 0]

Lu3NC80
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138686, 138690)
In blends containing Lu3NC80-PCBE<missing VAR>H, we found 2 times weaker photoluminescencequenching, remainders of interchain excitons, and, most remarkably, tripletexcitons formed on the polymer chain, which were absent in the referenceP3HT<missing VAR>PC61BM<missing VAR> blends.
Featurization terminated normally.
0,0,0,0,0,0.9523809523809523,0.011904761904761904,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0.3, 'V', 4],[227.0, 6, ',', 4],[12.0, 2, 'times', 0]

PCB
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138692, 138694)
In blends containing Lu3NC80-PCBE<missing VAR>H, we found 2 times weaker photoluminescencequenching, remainders of interchain excitons, and, most remarkably, tripletexcitons formed on the polymer chain, which were absent in the referenceP3HT<missing VAR>PC61BM<missing VAR> blends.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 0.3, 'V', 4],[233.0, 6, ',', 4],[8.0, 2, 'times', 0]

H
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138696, 138696)
In blends containing Lu3NC80-PCBE<missing VAR>H, we found 2 times weaker photoluminescencequenching, remainders of interchain excitons, and, most remarkably, tripletexcitons formed on the polymer chain, which were absent in the referenceP3HT<missing VAR>PC61BM<missing VAR> blends.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 0.3, 'V', 4],[237.0, 6, ',', 4],[6.0, 2, 'times', 0]

P3H
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138758, 138760)
In blends containing Lu3NC80-PCBE<missing VAR>H, we found 2 times weaker photoluminescencequenching, remainders of interchain excitons, and, most remarkably, tripletexcitons formed on the polymer chain, which were absent in the referenceP3HT<missing VAR>PC61BM<missing VAR> blends.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 0.3, 'V', 4],[299.0, 6, ',', 4],[56.0, 2, 'times', 0]

PC61B
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138762, 138765)
In blends containing Lu3NC80-PCBE<missing VAR>H, we found 2 times weaker photoluminescencequenching, remainders of interchain excitons, and, most remarkably, tripletexcitons formed on the polymer chain, which were absent in the referenceP3HT<missing VAR>PC61BM<missing VAR> blends.
Featurization terminated normally.
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 0.3, 'V', 4],[303.0, 6, ',', 4],[60.0, 2, 'times', 0]

Lu3NC80
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138819, 138823)
 We show that electron back transfer to the triplet statealong with the lower exciton dissociation yield due to intramolecular chargetransfer in Lu3NC80-PCBE<missing VAR>H are responsible for the reduced photocurrent.
Featurization terminated normally.
0,0,0,0,0,0.9523809523809523,0.011904761904761904,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 0.3, 'V', 5],[360.0, 6, ',', 5],[117.0, 2, 'times', 1]

PCB
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138825, 138827)
 We show that electron back transfer to the triplet statealong with the lower exciton dissociation yield due to intramolecular chargetransfer in Lu3NC80-PCBE<missing VAR>H are responsible for the reduced photocurrent.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 0.3, 'V', 5],[366.0, 6, ',', 5],[123.0, 2, 'times', 1]

H
###Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes|Moritz Liedtke,Andreas Sperlich,Hannes Kraus,Andreas Baumann,Carsten Deibel,Maarten J. M. Wirix,Joachim Loos,Claudia M. Cardona,Vladimir Dyakonov###
(138829, 138829)
 We show that electron back transfer to the triplet statealong with the lower exciton dissociation yield due to intramolecular chargetransfer in Lu3NC80-PCBE<missing VAR>H are responsible for the reduced photocurrent.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 0.3, 'V', 5],[370.0, 6, ',', 5],[127.0, 2, 'times', 1]

In
###Enhancing Intrinsic Stability of Hybrid Perovskite Solar Cell by Strong, yet Balanced, Electronic Coupling|Fedwa El-Mellouhi,El Tayeb Bentria,Sergey N Rashkeev,Sabre Kais,Fahhad H Alharbi###
(139393, 139393)
 In the past few years, the meteoric development of hybrid organic--inorganicperovskite solar cells (PSC) astonished the community.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSC)
###Enhancing Intrinsic Stability of Hybrid Perovskite Solar Cell by Strong, yet Balanced, Electronic Coupling|Fedwa El-Mellouhi,El Tayeb Bentria,Sergey N Rashkeev,Sabre Kais,Fahhad H Alharbi###
(139426, 139430)
 In the past few years, the meteoric development of hybrid organic--inorganicperovskite solar cells (PSC) astonished the community.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSC
###Enhancing Intrinsic Stability of Hybrid Perovskite Solar Cell by Strong, yet Balanced, Electronic Coupling|Fedwa El-Mellouhi,El Tayeb Bentria,Sergey N Rashkeev,Sabre Kais,Fahhad H Alharbi###
(139500, 139502)
 Here, we report a mechanismto chemically stabilize PSC absorbers.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI6
###Enhancing Intrinsic Stability of Hybrid Perovskite Solar Cell by Strong, yet Balanced, Electronic Coupling|Fedwa El-Mellouhi,El Tayeb Bentria,Sergey N Rashkeev,Sabre Kais,Fahhad H Alharbi###
(139567, 139569)
 We propose to replace the widely usedmethylammonium cation (ceCH3NH3+) by alternative molecular cations allowingan enhanced electronic coupling between the cation and the cePbI6 octahedrawhile maintaining the band gap energy within the suitable range for solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Enhancing Intrinsic Stability of Hybrid Perovskite Solar Cell by Strong, yet Balanced, Electronic Coupling|Fedwa El-Mellouhi,El Tayeb Bentria,Sergey N Rashkeev,Sabre Kais,Fahhad H Alharbi###
(139794, 139796)
 This shall unlock the hindering instabilityproblem for PSCs and allow them to hit the market as a serious low-costcompetitor to silicon based solar cell technologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum-kinetic perspective on photovoltaic device operation in nanostructure-based solar cells|Urs Aeberhard###
(139964, 139964)
 In both cases, the local density of electronic and opticalstates deviates strongly from that in a homogeneous bulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Quantum-kinetic perspective on photovoltaic device operation in nanostructure-based solar cells|Urs Aeberhard###
(140007, 140007)
 At the sametime, non-local and coherent phenomena like tunneling or ballistic transportbecome increasingly relevant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Quantum-kinetic perspective on photovoltaic device operation in nanostructure-based solar cells|Urs Aeberhard###
(140045, 140045)
 As a consequence, the semi-classical, diffusivebulk picture conventionally assumed may no longer be appropriate to describethe physical processes of generation, transport, and recombination governingthe photovoltaic operation of such devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum-kinetic perspective on photovoltaic device operation in nanostructure-based solar cells|Urs Aeberhard###
(140119, 140119)
 In this review, we provide aquantum-kinetic perspective on photovoltaic device operation that reachesbeyond the limits of the standard simulation models for bulk solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSC)
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140441, 140445)
 One of the main challenges for perovskite solar cells (PSC) is theirstability, due to environment-induced perovskite decomposition.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140535, 140535)
 In this contribution,the influence of different contact metallization layers, such as aluminum (Al),silver (Ag), gold (Au) and nickel (Ni) on the storage stability of invertedplanar methylammonium lead iodide (M<missing VAR>API)-based perovskite solar cells withoutencapsulation has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Al)
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140564, 140566)
 In this contribution,the influence of different contact metallization layers, such as aluminum (Al),silver (Ag), gold (Au) and nickel (Ni) on the storage stability of invertedplanar methylammonium lead iodide (M<missing VAR>API)-based perovskite solar cells withoutencapsulation has been investigated.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Ag)
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140572, 140574)
 In this contribution,the influence of different contact metallization layers, such as aluminum (Al),silver (Ag), gold (Au) and nickel (Ni) on the storage stability of invertedplanar methylammonium lead iodide (M<missing VAR>API)-based perovskite solar cells withoutencapsulation has been investigated.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Au)
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140579, 140581)
 In this contribution,the influence of different contact metallization layers, such as aluminum (Al),silver (Ag), gold (Au) and nickel (Ni) on the storage stability of invertedplanar methylammonium lead iodide (M<missing VAR>API)-based perovskite solar cells withoutencapsulation has been investigated.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Ni)
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140587, 140589)
 In this contribution,the influence of different contact metallization layers, such as aluminum (Al),silver (Ag), gold (Au) and nickel (Ni) on the storage stability of invertedplanar methylammonium lead iodide (M<missing VAR>API)-based perovskite solar cells withoutencapsulation has been investigated.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140616, 140616)
 In this contribution,the influence of different contact metallization layers, such as aluminum (Al),silver (Ag), gold (Au) and nickel (Ni) on the storage stability of invertedplanar methylammonium lead iodide (M<missing VAR>API)-based perovskite solar cells withoutencapsulation has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140652, 140652)
 For this study current-voltage (J<missing VAR>-V) andimpedance measurements in combination with scanning electron microscope (SEM)and Energy-dispersive X<missing VAR>-ray spectroscopy (EDX) analysis were used to examineand correlate structural device information with the development of PSCelectrical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140675, 140675)
 For this study current-voltage (J<missing VAR>-V) andimpedance measurements in combination with scanning electron microscope (SEM)and Energy-dispersive X<missing VAR>-ray spectroscopy (EDX) analysis were used to examineand correlate structural device information with the development of PSCelectrical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSC
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140728, 140730)
 For this study current-voltage (J<missing VAR>-V) andimpedance measurements in combination with scanning electron microscope (SEM)and Energy-dispersive X<missing VAR>-ray spectroscopy (EDX) analysis were used to examineand correlate structural device information with the development of PSCelectrical properties.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140773, 140773)
 While a strong perovskite decomposition and furtheriodide diffusion to the contacts were detected for devices using Al, Ag or Auas cathode electrodes, the microstructure of Ni cathodes inhibits suchdecomposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140776, 140776)
 While a strong perovskite decomposition and furtheriodide diffusion to the contacts were detected for devices using Al, Ag or Auas cathode electrodes, the microstructure of Ni cathodes inhibits suchdecomposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140780, 140780)
 While a strong perovskite decomposition and furtheriodide diffusion to the contacts were detected for devices using Al, Ag or Auas cathode electrodes, the microstructure of Ni cathodes inhibits suchdecomposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140796, 140796)
 While a strong perovskite decomposition and furtheriodide diffusion to the contacts were detected for devices using Al, Ag or Auas cathode electrodes, the microstructure of Ni cathodes inhibits suchdecomposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140828, 140829)
 This experiment has allowed for the realization of M<missing VAR>APIbased solar cells with Ni contacts, which exhibit no efficiency decrease belowas-fabricated values for up to one month of storage and select AM<missing VAR>1.5 testing inambient atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Influence of the Cathodes Microstructure on the Stability of Inverted Planar Perovskite Solar Cells|Svetlana Sirotinskaya,Roland Schmechel,Niels Benson###
(140840, 140840)
 This experiment has allowed for the realization of M<missing VAR>APIbased solar cells with Ni contacts, which exhibit no efficiency decrease belowas-fabricated values for up to one month of storage and select AM<missing VAR>1.5 testing inambient atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices|Zhibing Wang,Conor P. Puls,Neal E. Staley,Yu Zhang,Aaron Todd,Jian Xu,Casey A. Howsare,Matthew J. Hollander,Joshua A. Robinson,Ying Liu###
(140960, 140960)
 Graphene has been used recently as a replacement for indium tin oxide (IT<missing VAR>O)for the transparent electrode of an organic photovoltaic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 90, '%', 3],[200.0, 1.23, '%', 4],[211.0, 532, 'nm', 4],[282.0, 3.98, '%', 6],[303.0, 3.86, '%', 6]

O
###Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices|Zhibing Wang,Conor P. Puls,Neal E. Staley,Yu Zhang,Aaron Todd,Jian Xu,Casey A. Howsare,Matthew J. Hollander,Joshua A. Robinson,Ying Liu###
(140962, 140962)
 Graphene has been used recently as a replacement for indium tin oxide (IT<missing VAR>O)for the transparent electrode of an organic photovoltaic device.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 90, '%', 3],[198.0, 1.23, '%', 4],[209.0, 532, 'nm', 4],[280.0, 3.98, '%', 6],[301.0, 3.86, '%', 6]

I
###Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices|Zhibing Wang,Conor P. Puls,Neal E. Staley,Yu Zhang,Aaron Todd,Jian Xu,Casey A. Howsare,Matthew J. Hollander,Joshua A. Robinson,Ying Liu###
(140997, 140997)
 Due to itslimited supply, IT<missing VAR>O is considered as a limiting factor for thecommercialization of organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 90, '%', 2],[163.0, 1.23, '%', 3],[174.0, 532, 'nm', 3],[245.0, 3.98, '%', 5],[266.0, 3.86, '%', 5]

O
###Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices|Zhibing Wang,Conor P. Puls,Neal E. Staley,Yu Zhang,Aaron Todd,Jian Xu,Casey A. Howsare,Matthew J. Hollander,Joshua A. Robinson,Ying Liu###
(140999, 140999)
 Due to itslimited supply, IT<missing VAR>O is considered as a limiting factor for thecommercialization of organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 90, '%', 2],[161.0, 1.23, '%', 3],[172.0, 532, 'nm', 3],[243.0, 3.98, '%', 5],[264.0, 3.86, '%', 5]

CV
###Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices|Zhibing Wang,Conor P. Puls,Neal E. Staley,Yu Zhang,Aaron Todd,Jian Xu,Casey A. Howsare,Matthew J. Hollander,Joshua A. Robinson,Ying Liu###
(141061, 141062)
 We explored the use of large-areagraphene grown on copper by chemical vapor deposition (CVD) and thentransferred to a glass substrate as an alternative transparent electrode.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 90, '%', 1],[98.0, 1.23, '%', 2],[109.0, 532, 'nm', 2],[180.0, 3.98, '%', 4],[201.0, 3.86, '%', 4]

I
###Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices|Zhibing Wang,Conor P. Puls,Neal E. Staley,Yu Zhang,Aaron Todd,Jian Xu,Casey A. Howsare,Matthew J. Hollander,Joshua A. Robinson,Ying Liu###
(141209, 141209)
 We fabricated organic hybrid solar cells utilizing thismaterial as an electrode and compared their performance with IT<missing VAR>O devicesfabricated using the same procedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 90, '%', 2],[49.0, 1.23, '%', 1],[38.0, 532, 'nm', 1],[33.0, 3.98, '%', 1],[54.0, 3.86, '%', 1]

O
###Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices|Zhibing Wang,Conor P. Puls,Neal E. Staley,Yu Zhang,Aaron Todd,Jian Xu,Casey A. Howsare,Matthew J. Hollander,Joshua A. Robinson,Ying Liu###
(141211, 141211)
 We fabricated organic hybrid solar cells utilizing thismaterial as an electrode and compared their performance with IT<missing VAR>O devicesfabricated using the same procedure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 90, '%', 2],[51.0, 1.23, '%', 1],[40.0, 532, 'nm', 1],[31.0, 3.98, '%', 1],[52.0, 3.86, '%', 1]

I
###Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices|Zhibing Wang,Conor P. Puls,Neal E. Staley,Yu Zhang,Aaron Todd,Jian Xu,Casey A. Howsare,Matthew J. Hollander,Joshua A. Robinson,Ying Liu###
(141256, 141256)
 We demonstrated power conversionefficiency up to 3.98%, higher than that of the IT<missing VAR>O device (3.86%), showingthat layer-transferred graphene promises to be a high quality, low-cost,flexible material for transparent electrodes in solar cell technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 90, '%', 3],[96.0, 1.23, '%', 2],[85.0, 532, 'nm', 2],[14.0, 3.98, '%', 0],[7.0, 3.86, '%', 0]

O
###Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices|Zhibing Wang,Conor P. Puls,Neal E. Staley,Yu Zhang,Aaron Todd,Jian Xu,Casey A. Howsare,Matthew J. Hollander,Joshua A. Robinson,Ying Liu###
(141258, 141258)
 We demonstrated power conversionefficiency up to 3.98%, higher than that of the IT<missing VAR>O device (3.86%), showingthat layer-transferred graphene promises to be a high quality, low-cost,flexible material for transparent electrodes in solar cell technology.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 90, '%', 3],[98.0, 1.23, '%', 2],[87.0, 532, 'nm', 2],[16.0, 3.98, '%', 0],[5.0, 3.86, '%', 0]

In
###Predictive modeling of ion migration induced degradation in perovskite solar cells|Vikas Nandal,Pradeep R. Nair###
(141454, 141454)
 In this context, here we provide acomprehensive analysis of ion migration effects in perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HO
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(141913, 141914)
 For a solar cell, the most important property is the power conversionefficiency which is dependent on the highest occupied molecular orbitals (HOM<missing VAR>O)values of the donor molecules.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[427.0, 350, 'and', 6],[428.0, 243, 'molecules', 6]

O
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(141916, 141916)
 For a solar cell, the most important property is the power conversionefficiency which is dependent on the highest occupied molecular orbitals (HOM<missing VAR>O)values of the donor molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[425.0, 350, 'and', 6],[426.0, 243, 'molecules', 6]

HO
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(141963, 141964)
 Recently, machine learning techniques haveproved to be very useful in building predictive models for HOM<missing VAR>O values of donorstructures of Organic Photovoltaic Cells (OPVs).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 350, 'and', 5],[378.0, 243, 'molecules', 5]

O
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(141966, 141966)
 Recently, machine learning techniques haveproved to be very useful in building predictive models for HOM<missing VAR>O values of donorstructures of Organic Photovoltaic Cells (OPVs).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 350, 'and', 5],[376.0, 243, 'molecules', 5]

OP
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(141986, 141987)
 Recently, machine learning techniques haveproved to be very useful in building predictive models for HOM<missing VAR>O values of donorstructures of Organic Photovoltaic Cells (OPVs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 350, 'and', 5],[355.0, 243, 'molecules', 5]

S
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142059, 142059)
 Molecularline notations such as SMILES or InChI are popular input representations fordescribing the molecular structure of donor molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 350, 'and', 3],[283.0, 243, 'molecules', 3]

S
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142064, 142064)
 Molecularline notations such as SMILES or InChI are popular input representations fordescribing the molecular structure of donor molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 350, 'and', 3],[278.0, 243, 'molecules', 3]

In
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142068, 142068)
 Molecularline notations such as SMILES or InChI are popular input representations fordescribing the molecular structure of donor molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 350, 'and', 3],[274.0, 243, 'molecules', 3]

I
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142070, 142070)
 Molecularline notations such as SMILES or InChI are popular input representations fordescribing the molecular structure of donor molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 350, 'and', 3],[272.0, 243, 'molecules', 3]

S
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142122, 142122)
 The two types of linerepresentations encode different information, such as SMILES defines the bondtypes while InChi defines protonation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 350, 'and', 2],[220.0, 243, 'molecules', 2]

S
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142127, 142127)
 The two types of linerepresentations encode different information, such as SMILES defines the bondtypes while InChi defines protonation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 350, 'and', 2],[215.0, 243, 'molecules', 2]

In
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142140, 142140)
 The two types of linerepresentations encode different information, such as SMILES defines the bondtypes while InChi defines protonation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 350, 'and', 2],[202.0, 243, 'molecules', 2]

In
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142148, 142148)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 350, 'and', 1],[194.0, 243, 'molecules', 1]

SI
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142175, 142176)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 350, 'and', 1],[166.0, 243, 'molecules', 1]

S
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142188, 142188)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 350, 'and', 1],[154.0, 243, 'molecules', 1]

S
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142193, 142193)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 350, 'and', 1],[149.0, 243, 'molecules', 1]

In
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142198, 142198)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 350, 'and', 1],[144.0, 243, 'molecules', 1]

I
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142200, 142200)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 350, 'and', 1],[142.0, 243, 'molecules', 1]

HO
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142210, 142211)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 350, 'and', 1],[131.0, 243, 'molecules', 1]

O
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142213, 142213)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 350, 'and', 1],[129.0, 243, 'molecules', 1]

C
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142250, 142250)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 350, 'and', 1],[92.0, 243, 'molecules', 1]

P
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142252, 142252)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 350, 'and', 1],[90.0, 243, 'molecules', 1]

HOPV
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142272, 142275)
 In this work, we present an ensembledeep neural network architecture, called SINet, which harnesses both the SMILESand InChI molecular representations to predict HOM<missing VAR>O values and leverage thepotential of transfer learning from a sizeable DFT-computed dataset- HarvardCE<missing VAR>P to build more robust predictive models for relatively smaller HOPVdatasets.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 350, 'and', 1],[67.0, 243, 'molecules', 1]

C
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142283, 142283)
 Harvard CE<missing VAR>P dataset contains molecular structures and properties for2.3 million candidate donor structures for OPV while HOPV contains DFT-computedand experimental values of 350 and 243 molecules respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 350, 'and', 0],[59.0, 243, 'molecules', 0]

P
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142285, 142285)
 Harvard CE<missing VAR>P dataset contains molecular structures and properties for2.3 million candidate donor structures for OPV while HOPV contains DFT-computedand experimental values of 350 and 243 molecules respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 350, 'and', 0],[57.0, 243, 'molecules', 0]

OPV
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142314, 142316)
 Harvard CE<missing VAR>P dataset contains molecular structures and properties for2.3 million candidate donor structures for OPV while HOPV contains DFT-computedand experimental values of 350 and 243 molecules respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 350, 'and', 0],[26.0, 243, 'molecules', 0]

HOPV
###Transfer Learning Using Ensemble Neural Networks for Organic Solar Cell Screening|Arindam Paul,Dipendra Jha,Reda Al-Bahrani,Wei-keng Liao,Alok Choudhary,Ankit Agrawal###
(142320, 142323)
 Harvard CE<missing VAR>P dataset contains molecular structures and properties for2.3 million candidate donor structures for OPV while HOPV contains DFT-computedand experimental values of 350 and 243 molecules respectively.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 350, 'and', 0],[19.0, 243, 'molecules', 0]

HB
###Effect of Ion Migration Induced Electrode Degradation on the Operational Stability of Perovskite Solar Cells|Boris Rivkin,Paul Fassl,Qing Sun,Alexander D. Taylor,Zhuoying Chen,Yana Vaynzof###
(142533, 142534)
 Recently it has been claimedthat one of the key contributors to the instability of perovskite solar cellsis ion migration induced electrode degradation, which can be avoided byincorporating inorganic hole blocking layers (HBL) in the device architecture.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effect of Ion Migration Induced Electrode Degradation on the Operational Stability of Perovskite Solar Cells|Boris Rivkin,Paul Fassl,Qing Sun,Alexander D. Taylor,Zhuoying Chen,Yana Vaynzof###
(142548, 142548)
In this work, we investigate the operational environmental stability ofmethylammonium lead iodide (M<missing VAR>APbI3) perovskite solar cells that contain eitheran inorganic or organic HBL<missing VAR>, with only the former effectively blocking ionsfrom migrating to the metal electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Effect of Ion Migration Induced Electrode Degradation on the Operational Stability of Perovskite Solar Cells|Boris Rivkin,Paul Fassl,Qing Sun,Alexander D. Taylor,Zhuoying Chen,Yana Vaynzof###
(142580, 142581)
In this work, we investigate the operational environmental stability ofmethylammonium lead iodide (M<missing VAR>APbI3) perovskite solar cells that contain eitheran inorganic or organic HBL<missing VAR>, with only the former effectively blocking ionsfrom migrating to the metal electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HB
###Effect of Ion Migration Induced Electrode Degradation on the Operational Stability of Perovskite Solar Cells|Boris Rivkin,Paul Fassl,Qing Sun,Alexander D. Taylor,Zhuoying Chen,Yana Vaynzof###
(142605, 142606)
In this work, we investigate the operational environmental stability ofmethylammonium lead iodide (M<missing VAR>APbI3) perovskite solar cells that contain eitheran inorganic or organic HBL<missing VAR>, with only the former effectively blocking ionsfrom migrating to the metal electrode.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HB
###Effect of Ion Migration Induced Electrode Degradation on the Operational Stability of Perovskite Solar Cells|Boris Rivkin,Paul Fassl,Qing Sun,Alexander D. Taylor,Zhuoying Chen,Yana Vaynzof###
(142685, 142686)
 This is confirmed by X<missing VAR>-ray photoemissionspectroscopy measured on electrodes of degraded devices, where only electrodesof devices with an organic HBL<missing VAR> show a significant iodine signal.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(142967, 142967)
 In the present work, westudy the potential of sputter-deposited aluminum-doped zinc oxide (AZ<missing VAR>O) as analternative to the widely used but relatively expensive indium tin oxide (IT<missing VAR>O)as cathode material in semitransparent polymer-fullerene solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 2.0, '%', 5],[382.0, 60, '%', 5]

O
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143002, 143002)
 In the present work, westudy the potential of sputter-deposited aluminum-doped zinc oxide (AZ<missing VAR>O) as analternative to the widely used but relatively expensive indium tin oxide (IT<missing VAR>O)as cathode material in semitransparent polymer-fullerene solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2.0, '%', 5],[347.0, 60, '%', 5]

I
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143033, 143033)
 In the present work, westudy the potential of sputter-deposited aluminum-doped zinc oxide (AZ<missing VAR>O) as analternative to the widely used but relatively expensive indium tin oxide (IT<missing VAR>O)as cathode material in semitransparent polymer-fullerene solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 2.0, '%', 5],[316.0, 60, '%', 5]

O
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143035, 143035)
 In the present work, westudy the potential of sputter-deposited aluminum-doped zinc oxide (AZ<missing VAR>O) as analternative to the widely used but relatively expensive indium tin oxide (IT<missing VAR>O)as cathode material in semitransparent polymer-fullerene solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 2.0, '%', 5],[314.0, 60, '%', 5]

Au
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143089, 143089)
Concerning the anode, we utilized an insulator/metal/insulator structure basedon ultra-thin Au films embedded between two evaporated MoO3 layers, with theouter MoO3 film (capping layer) serving as a light coupling layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 2.0, '%', 4],[260.0, 60, '%', 4]

MoO3
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143101, 143103)
Concerning the anode, we utilized an insulator/metal/insulator structure basedon ultra-thin Au films embedded between two evaporated MoO3 layers, with theouter MoO3 film (capping layer) serving as a light coupling layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 2.0, '%', 4],[246.0, 60, '%', 4]

MoO3
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143115, 143117)
Concerning the anode, we utilized an insulator/metal/insulator structure basedon ultra-thin Au films embedded between two evaporated MoO3 layers, with theouter MoO3 film (capping layer) serving as a light coupling layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 2.0, '%', 4],[232.0, 60, '%', 4]

I
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143149, 143149)
 Theperformance of the IT<missing VAR>O-free semitransparent solar cells is systematicallystudied as dependent on the thickness of the capping layer and the activelayer, as well as the illumination direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2.0, '%', 3],[200.0, 60, '%', 3]

O
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143151, 143151)
 Theperformance of the IT<missing VAR>O-free semitransparent solar cells is systematicallystudied as dependent on the thickness of the capping layer and the activelayer, as well as the illumination direction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 2.0, '%', 3],[198.0, 60, '%', 3]

I
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143313, 143313)
 With the conventional absorber materials studied herein, optimizedIT<missing VAR>O-free and semitransparent devices reached 2.0% power conversion efficiencyand a maximum optical transmission of 60%, with the device concept beingpotentially transferable to other absorber materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2.0, '%', 0],[36.0, 60, '%', 0]

O
###Semitransparent Polymer-Based Solar Cells with Aluminum-Doped Zinc Oxide Electrodes|Sebastian Wilken,Verena Wilkens,Dorothea Scheunemann,Regina-Elisabeth Nowak,Karsten von Maydell,Jürgen Parisi,Holger Borchert###
(143315, 143315)
 With the conventional absorber materials studied herein, optimizedIT<missing VAR>O-free and semitransparent devices reached 2.0% power conversion efficiencyand a maximum optical transmission of 60%, with the device concept beingpotentially transferable to other absorber materials.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2.0, '%', 0],[34.0, 60, '%', 0]

In
###Impact of a doping-induced space-charge region on the collection of photo-generated charge carriers in thin-film solar cells based on low-mobility semiconductors|Oskar J. Sandberg,Staffan Dahlström,Mathias Nyman,Sebastian Wilken,Dorothea Scheunemann,Ronald Österbacka###
(143520, 143520)
 In this work, the impact of a doping-induced space-chargeregion on the current-voltage characteristics of low-mobility solar celldevices has been clarified by means of analytical derivations and numericaldevice simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3
###Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells|Elaine McVay,Ahmad Zubair,Yuxuan Lin,Amirhasan Nourbakhsh,Tomás Palacios###
(143848, 143851)
Impact of Al2O3 Passivation on the Photovoltaic Performance of Vertical WSe2 Schottky Junction Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 29.5, '%', 4],[378.0, 380, 'mV', 6]

WSe2
###Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells|Elaine McVay,Ahmad Zubair,Yuxuan Lin,Amirhasan Nourbakhsh,Tomás Palacios###
(143867, 143869)
Impact of Al2O3 Passivation on the Photovoltaic Performance of Vertical WSe2 Schottky Junction Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 29.5, '%', 4],[360.0, 380, 'mV', 6]

Pt/WSe2
###Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells|Elaine McVay,Ahmad Zubair,Yuxuan Lin,Amirhasan Nourbakhsh,Tomás Palacios###
(144042, 144046)
 This paper studies Pt/WSe2 vertical Schottkyjunction solar cells with various WSe2 thicknesses in order to find theoptimum absorber thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[87.0, 29.5, '%', 1],[183.0, 380, 'mV', 3]

WSe2
###Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells|Elaine McVay,Ahmad Zubair,Yuxuan Lin,Amirhasan Nourbakhsh,Tomás Palacios###
(144063, 144065)
 This paper studies Pt/WSe2 vertical Schottkyjunction solar cells with various WSe2 thicknesses in order to find theoptimum absorber thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 29.5, '%', 1],[164.0, 380, 'mV', 3]

Al2O3
###Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells|Elaine McVay,Ahmad Zubair,Yuxuan Lin,Amirhasan Nourbakhsh,Tomás Palacios###
(144110, 144113)
Also, we show that the photovoltaic performance canbe improved via Al2O3 passivation which increases the EQE by up to 29.5% at410 nm wavelength incident light.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 29.5, '%', 0],[116.0, 380, 'mV', 2]

Al2O3
###Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells|Elaine McVay,Ahmad Zubair,Yuxuan Lin,Amirhasan Nourbakhsh,Tomás Palacios###
(144195, 144198)
 Thanks to the Al2O3 coating, this work demonstratesa device with open circuit voltage (VOC) of 380 mV and short circuitcurrent density (J<missing VAR>SC) of 10.7 m<missing VAR>A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 29.5, '%', 2],[31.0, 380, 'mV', 0]

(VOC)
###Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells|Elaine McVay,Ahmad Zubair,Yuxuan Lin,Amirhasan Nourbakhsh,Tomás Palacios###
(144222, 144226)
 Thanks to the Al2O3 coating, this work demonstratesa device with open circuit voltage (VOC) of 380 mV and short circuitcurrent density (J<missing VAR>SC) of 10.7 m<missing VAR>A/cm2.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 29.5, '%', 2],[3.0, 380, 'mV', 0]

C
###Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells|Elaine McVay,Ahmad Zubair,Yuxuan Lin,Amirhasan Nourbakhsh,Tomás Palacios###
(144245, 144245)
 Thanks to the Al2O3 coating, this work demonstratesa device with open circuit voltage (VOC) of 380 mV and short circuitcurrent density (J<missing VAR>SC) of 10.7 m<missing VAR>A/cm2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 29.5, '%', 2],[16.0, 380, 'mV', 0]

Pt/WSe2
###Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells|Elaine McVay,Ahmad Zubair,Yuxuan Lin,Amirhasan Nourbakhsh,Tomás Palacios###
(144281, 144285)
 Finally, the impact of Schottkybarrier height inhomogeneity at the Pt/WSe2 contact is investigated as asource of open circuit voltage lowering in these devices<missing PERIOD>
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[148.0, 29.5, '%', 3],[52.0, 380, 'mV', 1]

NiO
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144334, 144335)
Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144372, 144373)
 Favorable optoelectronic properties and ease of fabrication make NiO apromising hole transport layer for perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144413, 144414)
 To achieve maximumefficiency, the electronic levels of NiO need to be optimally aligned withthose of the perovskite absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144457, 144458)
 Applying surface modifiers by adsorbingspecies on the NiO surface, is one of the most widespread strategies to tuneits energy levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144593, 144594)
 Using density functional theory (DFT) calculations,we investigate the effect of single layer adsorption of twenty different alkalihalides on the electronic levels of NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VB
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144629, 144630)
 Our results show that alkali halidescan shift the position of the valence band maximum (VBM) of NiO to asurprisingly large extend in both directions, from -310 e<missing VAR>V to +159 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144636, 144637)
 Our results show that alkali halidescan shift the position of the valence band maximum (VBM) of NiO to asurprisingly large extend in both directions, from -310 e<missing VAR>V to +159 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144664, 144664)
 Our results show that alkali halidescan shift the position of the valence band maximum (VBM) of NiO to asurprisingly large extend in both directions, from -310 e<missing VAR>V to +159 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144673, 144673)
 Our results show that alkali halidescan shift the position of the valence band maximum (VBM) of NiO to asurprisingly large extend in both directions, from -310 e<missing VAR>V to +159 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VB
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144735, 144736)
 Weinterpret the direction and magnitude of the shift in terms of the surfacedipoles, formed by the adsorbed cations and anions, where the magnitude of theVBM<missing VAR> shift is a monotonic function of the surface coverage.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells|Sofia Apergi,Geert Brocks,Shuxia Tao###
(144786, 144787)
 Our results indicatethat with alkali halide surface modifiers, the electronic levels of NiO can betuned robustly and potentially match those of many perovskite compositions inperovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Perovskite/silicon tandem solar cells: Effect of luminescent coupling and bifaciality|Klaus Jäger,Peter Tillmann,Eugene A. Katz,Christiane Becker###
(145167, 145167)
 As a result, luminescent coupling strongly relaxes theconstraints on the top-cell bandgap in monolithic tandem devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 50, '%', 1]

In
###Perovskite/silicon tandem solar cells: Effect of luminescent coupling and bifaciality|Klaus Jäger,Peter Tillmann,Eugene A. Katz,Christiane Becker###
(145206, 145206)
 Incombination with bifacial operation, the optimum perovskite bandgap shifts from1.71 e<missing VAR>V to the range 1.60-1.65 e<missing VAR>V where already high-quality perovskitematerials exist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 50, '%', 2]

V
###Perovskite/silicon tandem solar cells: Effect of luminescent coupling and bifaciality|Klaus Jäger,Peter Tillmann,Eugene A. Katz,Christiane Becker###
(145234, 145234)
 Incombination with bifacial operation, the optimum perovskite bandgap shifts from1.71 e<missing VAR>V to the range 1.60-1.65 e<missing VAR>V where already high-quality perovskitematerials exist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 50, '%', 2]

V
###Perovskite/silicon tandem solar cells: Effect of luminescent coupling and bifaciality|Klaus Jäger,Peter Tillmann,Eugene A. Katz,Christiane Becker###
(145247, 145247)
 Incombination with bifacial operation, the optimum perovskite bandgap shifts from1.71 e<missing VAR>V to the range 1.60-1.65 e<missing VAR>V where already high-quality perovskitematerials exist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 50, '%', 2]

S
###Direct quantification of quasi-Fermi level splitting in organic semiconductor devices|Drew B. Riley,Oskar J. Sandberg,Nora M. Wilson,Wei Li,Stefan Zeiske,Nasim Zarrabi,Paul Meredith,Ronald Osterbacka,Ardalan Armin###
(145426, 145426)
 Thedominant non-radiative loss is intrinsic to the active layer and can bedetermined from the quasi-Fermi level splitting (QFLS) and the radiativethermodynamic limit of the photovoltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Direct quantification of quasi-Fermi level splitting in organic semiconductor devices|Drew B. Riley,Oskar J. Sandberg,Nora M. Wilson,Wei Li,Stefan Zeiske,Nasim Zarrabi,Paul Meredith,Ronald Osterbacka,Ardalan Armin###
(145456, 145456)
 Quantification of the QFLS in thinfilm devices with low mobility is challenging due to the excitonic nature ofphotoexcitation and additional sources of nonradiative loss associated with thedevice structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Direct quantification of quasi-Fermi level splitting in organic semiconductor devices|Drew B. Riley,Oskar J. Sandberg,Nora M. Wilson,Wei Li,Stefan Zeiske,Nasim Zarrabi,Paul Meredith,Ronald Osterbacka,Ardalan Armin###
(145587, 145587)
 This work outlines an experimental approach based onelectro-modulated photoluminescence, which can be used to directly measure theintrinsic non-radiative loss to the open-circuit voltage; thereby, quantifyingthe QFLS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Direct quantification of quasi-Fermi level splitting in organic semiconductor devices|Drew B. Riley,Oskar J. Sandberg,Nora M. Wilson,Wei Li,Stefan Zeiske,Nasim Zarrabi,Paul Meredith,Ronald Osterbacka,Ardalan Armin###
(145622, 145622)
 Drift-diffusion simulations are carried out to show that this methodaccurately predicts the QFLS in the bulk of the device regardless ofdevice-related non-radiative losses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Direct quantification of quasi-Fermi level splitting in organic semiconductor devices|Drew B. Riley,Oskar J. Sandberg,Nora M. Wilson,Wei Li,Stefan Zeiske,Nasim Zarrabi,Paul Meredith,Ronald Osterbacka,Ardalan Armin###
(145660, 145660)
 State-of-the-art PM<missing VAR>6Y6-based organicsolar cells are used as a model to test the experimental approach, and the QFLSis quantified and shown to be independent of device architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y6
###Direct quantification of quasi-Fermi level splitting in organic semiconductor devices|Drew B. Riley,Oskar J. Sandberg,Nora M. Wilson,Wei Li,Stefan Zeiske,Nasim Zarrabi,Paul Meredith,Ronald Osterbacka,Ardalan Armin###
(145663, 145664)
 State-of-the-art PM<missing VAR>6Y6-based organicsolar cells are used as a model to test the experimental approach, and the QFLSis quantified and shown to be independent of device architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Direct quantification of quasi-Fermi level splitting in organic semiconductor devices|Drew B. Riley,Oskar J. Sandberg,Nora M. Wilson,Wei Li,Stefan Zeiske,Nasim Zarrabi,Paul Meredith,Ronald Osterbacka,Ardalan Armin###
(145703, 145703)
 State-of-the-art PM<missing VAR>6Y6-based organicsolar cells are used as a model to test the experimental approach, and the QFLSis quantified and shown to be independent of device architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Direct quantification of quasi-Fermi level splitting in organic semiconductor devices|Drew B. Riley,Oskar J. Sandberg,Nora M. Wilson,Wei Li,Stefan Zeiske,Nasim Zarrabi,Paul Meredith,Ronald Osterbacka,Ardalan Armin###
(145747, 145747)
 This workprovides a method to quantify the QFLS of organic solar cells under operationalconditions, fully characterizing the different contributions to thenon-radiative losses of the open-circuit voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells|Koosha Nassiri Nazif,Alwin Daus,Jiho Hong,Nayeun Lee,Sam Vaziri,Aravindh Kumar,Frederick Nitta,Michelle Chen,Siavash Kananian,Raisul Islam,Kwan-Ho Kim,Jin-Hong Park,Ada Poon,Mark L. Brongersma,Eric Pop,Krishna C. Saraswat###
(145898, 145898)
 Semiconducting transition metal dichalcogenides (TMDs) are promising forflexible high-specific-power photovoltaics due to their ultrahigh opticalabsorption coefficients, desirable band gaps and self-passivated surfaces.
EXCEPTION 3: IndexError for Ds
PC
[115.0, 2, '%', 1],[288.0, 5.1, '%', 4],[415.0, -1, ',', 5]

FeMnO3
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146386, 146389)
All Inorganic pn Heterojunction Solar Cells by Solution Combustion Synthesis using n<missing VAR>type FeMnO3 Perovskite Photoactive Layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 54.3, '%', 8],[456.0, 0.05, '%', 8],[460.0, 100, 'mW', 8]

(FeMnO3)
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146427, 146432)
 This study outlines the synthesis and physicochemical characteristics of asolution-processable iron manganite (FeMnO3) nanoparticles via a chemicalcombustion method using tartartic acid as a fuel and demonstrates theperformance of this material as a n<missing VAR>-type photoactive layer in all-oxide solarcells.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 54.3, '%', 7],[413.0, 0.05, '%', 7],[417.0, 100, 'mW', 7]

(SCS)
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146514, 146518)
 It is shown that the solution combustion synthesis (SCS) method enablesthe formation of pure crystal phase FeMnO3 with controllable particle size.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 54.3, '%', 6],[327.0, 0.05, '%', 6],[331.0, 100, 'mW', 6]

FeMnO3
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146537, 146540)
 It is shown that the solution combustion synthesis (SCS) method enablesthe formation of pure crystal phase FeMnO3 with controllable particle size.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 54.3, '%', 6],[305.0, 0.05, '%', 6],[309.0, 100, 'mW', 6]

FeMnO3
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146578, 146581)
 XRDpattern and morphology images from TEM confirm the purity of FeMnO3 phase andthe relative small crystallite size (13 nm), firstly reported in theliterature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 54.3, '%', 5],[264.0, 0.05, '%', 5],[268.0, 100, 'mW', 5]

FeMnO3
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146632, 146635)
 Moreover, to assemble a network of connected FeMnO3 nanoparticles,b<missing VAR>eta-alanine was used as a capping agent and dimethylformamide (DMF) as apolar aprotic solvent for the colloidal dispersion of FeMnO3 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 54.3, '%', 4],[210.0, 0.05, '%', 4],[214.0, 100, 'mW', 4]

F
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146665, 146665)
 Moreover, to assemble a network of connected FeMnO3 nanoparticles,b<missing VAR>eta-alanine was used as a capping agent and dimethylformamide (DMF) as apolar aprotic solvent for the colloidal dispersion of FeMnO3 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 54.3, '%', 4],[180.0, 0.05, '%', 4],[184.0, 100, 'mW', 4]

FeMnO3
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146689, 146692)
 Moreover, to assemble a network of connected FeMnO3 nanoparticles,b<missing VAR>eta-alanine was used as a capping agent and dimethylformamide (DMF) as apolar aprotic solvent for the colloidal dispersion of FeMnO3 NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 54.3, '%', 4],[153.0, 0.05, '%', 4],[157.0, 100, 'mW', 4]

N
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146694, 146694)
 Moreover, to assemble a network of connected FeMnO3 nanoparticles,b<missing VAR>eta-alanine was used as a capping agent and dimethylformamide (DMF) as apolar aprotic solvent for the colloidal dispersion of FeMnO3 NPs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 54.3, '%', 4],[151.0, 0.05, '%', 4],[155.0, 100, 'mW', 4]

NiO/FeMnO3
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146739, 146745)
 The proposed method iscrucial to obtain functional solution processed NiO/FeMnO3 heterojunctioninorganic photovoltaics.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[63.0, 54.3, '%', 2],[100.0, 0.05, '%', 2],[104.0, 100, 'mW', 2]

V
###All Inorganic p_n Heterojunction Solar Cells by Solution Combustion Synthesis using n_type FeMnO3 Perovskite Photoactive Layer|Ioannis T. Papadas,Apostolos Ioakeimidis,Ioannis Vamvasakis,Polyvios Eleftheriou,Gerasimos S. Armatas,Stelios A. Choulis###
(146796, 146796)
 These solar cells demonstrate a high open circuit voltage of1.31 V with sufficient fill factor of 54.3% and low short circuit current of0.07 m<missing VAR>A cm-2 delivering a power conversion efficiency of 0.05% under 100 mWcm-2 illumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 54.3, '%', 0],[49.0, 0.05, '%', 0],[53.0, 100, 'mW', 0]

Sb2Se3/CdS
###Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages|Thomas Paul Weiss,Ignacio Minguez-Bacho,Elena Zuccalà,Michele Melchiorre,Nathalie Valle,Brahime El Adib,Tadahiro Yokosawa,Erdmann Spiecker,Julien Bachmann,Phillip J. Dale,Susanne Siebentritt###
(146932, 146938)
Post-deposition annealing and interfacial ALD buffer layers of Sb2Se3/CdS stacks for reduced interface recombination and increased open-circuit voltages.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[329.0, 485, 'mV', 7]

Sb2Se3
###Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages|Thomas Paul Weiss,Ignacio Minguez-Bacho,Elena Zuccalà,Michele Melchiorre,Nathalie Valle,Brahime El Adib,Tadahiro Yokosawa,Erdmann Spiecker,Julien Bachmann,Phillip J. Dale,Susanne Siebentritt###
(146964, 146967)
 Currently, Sb2Se3 thin films receive considerable research interest asa solar cell absorber material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 485, 'mV', 6]

Sb2Se3
###Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages|Thomas Paul Weiss,Ignacio Minguez-Bacho,Elena Zuccalà,Michele Melchiorre,Nathalie Valle,Brahime El Adib,Tadahiro Yokosawa,Erdmann Spiecker,Julien Bachmann,Phillip J. Dale,Susanne Siebentritt###
(147060, 147063)
 Polycrystalline thin film Sb2Se3absorbers and solar cells are prepared in substrate configuration and thedominant recombination path is studied using photoluminescence spectroscopy andtemperature dependent current-voltage characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 485, 'mV', 4]

CdS
###Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages|Thomas Paul Weiss,Ignacio Minguez-Bacho,Elena Zuccalà,Michele Melchiorre,Nathalie Valle,Brahime El Adib,Tadahiro Yokosawa,Erdmann Spiecker,Julien Bachmann,Phillip J. Dale,Susanne Siebentritt###
(147140, 147141)
 It is found that apost-deposition annealing after the CdS buffer layer deposition can effectivelyremove interface recombination since the activation energy of the dominantrecombination path becomes equal to the bandgap of the Sb2Se3 absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 485, 'mV', 3]

Sb2Se3
###Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages|Thomas Paul Weiss,Ignacio Minguez-Bacho,Elena Zuccalà,Michele Melchiorre,Nathalie Valle,Brahime El Adib,Tadahiro Yokosawa,Erdmann Spiecker,Julien Bachmann,Phillip J. Dale,Susanne Siebentritt###
(147193, 147196)
 It is found that apost-deposition annealing after the CdS buffer layer deposition can effectivelyremove interface recombination since the activation energy of the dominantrecombination path becomes equal to the bandgap of the Sb2Se3 absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 485, 'mV', 3]

Sb2Se3
###Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages|Thomas Paul Weiss,Ignacio Minguez-Bacho,Elena Zuccalà,Michele Melchiorre,Nathalie Valle,Brahime El Adib,Tadahiro Yokosawa,Erdmann Spiecker,Julien Bachmann,Phillip J. Dale,Susanne Siebentritt###
(147243, 147246)
 FinishedSb2Se3 solar cell devices reach open circuit voltages as high as 485 mV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 485, 'mV', 0]

TiO2
###Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages|Thomas Paul Weiss,Ignacio Minguez-Bacho,Elena Zuccalà,Michele Melchiorre,Nathalie Valle,Brahime El Adib,Tadahiro Yokosawa,Erdmann Spiecker,Julien Bachmann,Phillip J. Dale,Susanne Siebentritt###
(147335, 147337)
 It is shown that atomic layerdeposited intermediate buffer layers such as TiO2 or Sb2Se3 can pavethe way for overcoming this limitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 485, 'mV', 2]

Sb2Se3
###Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages|Thomas Paul Weiss,Ignacio Minguez-Bacho,Elena Zuccalà,Michele Melchiorre,Nathalie Valle,Brahime El Adib,Tadahiro Yokosawa,Erdmann Spiecker,Julien Bachmann,Phillip J. Dale,Susanne Siebentritt###
(147341, 147344)
 It is shown that atomic layerdeposited intermediate buffer layers such as TiO2 or Sb2Se3 can pavethe way for overcoming this limitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 485, 'mV', 2]

H
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147417, 147417)
 Due to their exceptional photovoltaic properties, metal halide perovskites(M<missing VAR>HPs) are extensively studied for their potential applications in solar cells.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 25, ',', 1],[191.0, 3, ',', 3],[297.0, 3, ',', 4]

In
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147443, 147443)
In recent years, the power conversion efficiencies of M<missing VAR>HPs-based solar cellsrapidly increased from the initial few % towards more than 25,% forsingle-junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 25, ',', 0],[165.0, 3, ',', 2],[271.0, 3, ',', 3]

H
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147461, 147461)
In recent years, the power conversion efficiencies of M<missing VAR>HPs-based solar cellsrapidly increased from the initial few % towards more than 25,% forsingle-junction devices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 25, ',', 0],[147.0, 3, ',', 2],[253.0, 3, ',', 3]

H
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147533, 147533)
 Therefore, also taking into account their low costsand ease of manufacturing, M<missing VAR>HPs-based solar cells have become thefastest-advancing photovoltaic technology.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 25, ',', 1],[75.0, 3, ',', 1],[181.0, 3, ',', 2]

In
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147558, 147558)
 In this regard, much of the recentwork has been dominated by absorber materials based on methylammonium M<missing VAR>HPs,such as M<missing VAR>APbX<missing VAR>3, where M<missing VAR>ACH3NH3 and X<missing VAR>Cl, Br and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 25, ',', 2],[50.0, 3, ',', 0],[156.0, 3, ',', 1]

H
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147595, 147595)
 In this regard, much of the recentwork has been dominated by absorber materials based on methylammonium M<missing VAR>HPs,such as M<missing VAR>APbX<missing VAR>3, where M<missing VAR>ACH3NH3 and X<missing VAR>Cl, Br and I.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 25, ',', 2],[13.0, 3, ',', 0],[119.0, 3, ',', 1]

Pb
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147606, 147606)
 In this regard, much of the recentwork has been dominated by absorber materials based on methylammonium M<missing VAR>HPs,such as M<missing VAR>APbX<missing VAR>3, where M<missing VAR>ACH3NH3 and X<missing VAR>Cl, Br and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 25, ',', 2],[2.0, 3, ',', 0],[108.0, 3, ',', 1]

CH3NH3
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147615, 147620)
 In this regard, much of the recentwork has been dominated by absorber materials based on methylammonium M<missing VAR>HPs,such as M<missing VAR>APbX<missing VAR>3, where M<missing VAR>ACH3NH3 and X<missing VAR>Cl, Br and I.
Featurization terminated normally.
0.75,0,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 25, ',', 2],[7.0, 3, ',', 0],[94.0, 3, ',', 1]

Cl
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147625, 147625)
 In this regard, much of the recentwork has been dominated by absorber materials based on methylammonium M<missing VAR>HPs,such as M<missing VAR>APbX<missing VAR>3, where M<missing VAR>ACH3NH3 and X<missing VAR>Cl, Br and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 25, ',', 2],[17.0, 3, ',', 0],[89.0, 3, ',', 1]

Br
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147628, 147628)
 In this regard, much of the recentwork has been dominated by absorber materials based on methylammonium M<missing VAR>HPs,such as M<missing VAR>APbX<missing VAR>3, where M<missing VAR>ACH3NH3 and X<missing VAR>Cl, Br and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 25, ',', 2],[20.0, 3, ',', 0],[86.0, 3, ',', 1]

I
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147632, 147632)
 In this regard, much of the recentwork has been dominated by absorber materials based on methylammonium M<missing VAR>HPs,such as M<missing VAR>APbX<missing VAR>3, where M<missing VAR>ACH3NH3 and X<missing VAR>Cl, Br and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 25, ',', 2],[24.0, 3, ',', 0],[82.0, 3, ',', 1]

K
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147683, 147683)
 Here, we presentthe results of contactless time-resolved photoconductivity measurements in anexceptionally wide range of temperatures of 4 to 290 textK that wereperformed for the various crystalline forms of the three parent M<missing VAR>APbX<missing VAR>3,i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 25, ',', 3],[75.0, 3, ',', 1],[31.0, 3, ',', 0]

Pb
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147712, 147712)
 Here, we presentthe results of contactless time-resolved photoconductivity measurements in anexceptionally wide range of temperatures of 4 to 290 textK that wereperformed for the various crystalline forms of the three parent M<missing VAR>APbX<missing VAR>3,i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 25, ',', 3],[104.0, 3, ',', 1],[2.0, 3, ',', 0]

PbCl3
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147726, 147728)
, M<missing VAR>APbCl3, M<missing VAR>APbBr3 and M<missing VAR>APbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 25, ',', 4],[118.0, 3, ',', 2],[12.0, 3, ',', 1]

PbBr3
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147733, 147735)
, M<missing VAR>APbCl3, M<missing VAR>APbBr3 and M<missing VAR>APbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 25, ',', 4],[125.0, 3, ',', 2],[19.0, 3, ',', 1]

PbI3
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147741, 147743)
, M<missing VAR>APbCl3, M<missing VAR>APbBr3 and M<missing VAR>APbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 25, ',', 4],[133.0, 3, ',', 2],[27.0, 3, ',', 1]

C
###Ultra-long charge carrier recombination time in methylammonium lead halide perovskites|A. Bojtor,S. Kollarics,B. G. Markus,A. Sienkiewicz,M. Kollar,L. Forro,F. Simon###
(147815, 147815)
 This approach was made possible bythe use of a high quality-factor (Q) microwave resonator, which cooperated witha commercially available microwave bridge equipped with an automatic frequencycontrol (AFC) and a helium gas-flow cryostat.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 25, ',', 5],[207.0, 3, ',', 3],[101.0, 3, ',', 2]

C
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(147885, 147885)
 Micro-structured anti reflective coatings (AR<missing VAR>C) have been identified as apromising solution to reduce optical losses in Concentrator Photovoltaicsmodules (CPV).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 250, 'x', 1],[324.0, 12, 'to', 5],[326.0, 14, '%', 5],[342.0, 15, 'to', 5],[344.0, 19, '%', 5],[419.0, 29.7, '%', 6]

(CPV)
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(147920, 147924)
 Micro-structured anti reflective coatings (AR<missing VAR>C) have been identified as apromising solution to reduce optical losses in Concentrator Photovoltaicsmodules (CPV).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 250, 'x', 1],[285.0, 12, 'to', 5],[287.0, 14, '%', 5],[303.0, 15, 'to', 5],[305.0, 19, '%', 5],[380.0, 29.7, '%', 6]

CPV
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(147941, 147943)
 We fabricated and tested in field a CPV modules made of 4sub-modules with a concentration factor of 250x, that embed either solar cellswith micro-structured encapsulating AR<missing VAR>C or solar cells with multilayer AR<missing VAR>C as areference.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 250, 'x', 0],[266.0, 12, 'to', 4],[268.0, 14, '%', 4],[284.0, 15, 'to', 4],[286.0, 19, '%', 4],[361.0, 29.7, '%', 5]

C
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(147991, 147991)
 We fabricated and tested in field a CPV modules made of 4sub-modules with a concentration factor of 250x, that embed either solar cellswith micro-structured encapsulating AR<missing VAR>C or solar cells with multilayer AR<missing VAR>C as areference.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 250, 'x', 0],[218.0, 12, 'to', 4],[220.0, 14, '%', 4],[236.0, 15, 'to', 4],[238.0, 19, '%', 4],[313.0, 29.7, '%', 5]

C
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148005, 148005)
 We fabricated and tested in field a CPV modules made of 4sub-modules with a concentration factor of 250x, that embed either solar cellswith micro-structured encapsulating AR<missing VAR>C or solar cells with multilayer AR<missing VAR>C as areference.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 250, 'x', 0],[204.0, 12, 'to', 4],[206.0, 14, '%', 4],[222.0, 15, 'to', 4],[224.0, 19, '%', 4],[299.0, 29.7, '%', 5]

C
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148025, 148025)
 The micro-structured encapsulating AR<missing VAR>C was made of semi-buriedsilica beads in polydimethylsiloxane (PDMS).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 250, 'x', 1],[184.0, 12, 'to', 3],[186.0, 14, '%', 3],[202.0, 15, 'to', 3],[204.0, 19, '%', 3],[279.0, 29.7, '%', 4]

P
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148047, 148047)
 The micro-structured encapsulating AR<missing VAR>C was made of semi-buriedsilica beads in polydimethylsiloxane (PDMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 250, 'x', 1],[162.0, 12, 'to', 3],[164.0, 14, '%', 3],[180.0, 15, 'to', 3],[182.0, 19, '%', 3],[257.0, 29.7, '%', 4]

S
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148050, 148050)
 The micro-structured encapsulating AR<missing VAR>C was made of semi-buriedsilica beads in polydimethylsiloxane (PDMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 250, 'x', 1],[159.0, 12, 'to', 3],[161.0, 14, '%', 3],[177.0, 15, 'to', 3],[179.0, 19, '%', 3],[254.0, 29.7, '%', 4]

(CSOC)
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148116, 148121)
 The module was in operation for 1year in the severe climatic conditions of Sherbrooke, Quebec, Canada, beforeextracting the sub-modules performance under Concentrator Standard OperatingCondition (CSOC).
Featurization successful!
0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 250, 'x', 2],[88.0, 12, 'to', 2],[90.0, 14, '%', 2],[106.0, 15, 'to', 2],[108.0, 19, '%', 2],[183.0, 29.7, '%', 3]

CSOC
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148241, 148244)
 Wereport an increase of 12 to 14% of the short-circuit current and of 15 to 19%of maximum power at CSOC for solar cells with a micro structured encapsulatingAR<missing VAR>C compared to the reference.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 250, 'x', 4],[32.0, 12, 'to', 0],[30.0, 14, '%', 0],[14.0, 15, 'to', 0],[12.0, 19, '%', 0],[60.0, 29.7, '%', 1]

C
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148265, 148265)
 Wereport an increase of 12 to 14% of the short-circuit current and of 15 to 19%of maximum power at CSOC for solar cells with a micro structured encapsulatingAR<missing VAR>C compared to the reference.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 250, 'x', 4],[56.0, 12, 'to', 0],[54.0, 14, '%', 0],[38.0, 15, 'to', 0],[36.0, 19, '%', 0],[39.0, 29.7, '%', 1]

CSOC
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148309, 148312)
 Despite a sub-optimal module design, we report asub-module efficiency of 29.7% at CSOC for a cell with micro-structuredencapsulating AR<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 250, 'x', 5],[100.0, 12, 'to', 1],[98.0, 14, '%', 1],[82.0, 15, 'to', 1],[80.0, 19, '%', 1],[5.0, 29.7, '%', 0]

C
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148331, 148331)
 Despite a sub-optimal module design, we report asub-module efficiency of 29.7% at CSOC for a cell with micro-structuredencapsulating AR<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 250, 'x', 5],[122.0, 12, 'to', 1],[120.0, 14, '%', 1],[104.0, 15, 'to', 1],[102.0, 19, '%', 1],[27.0, 29.7, '%', 0]

C
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148353, 148353)
 This proves the potential of micro-structured encapsulatingAR<missing VAR>C to improve CPV system performance and shows promise of reliability forsumi-buried microbeads in PDMS as encapsulating AR<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 250, 'x', 6],[144.0, 12, 'to', 2],[142.0, 14, '%', 2],[126.0, 15, 'to', 2],[124.0, 19, '%', 2],[49.0, 29.7, '%', 1]

CPV
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148359, 148361)
 This proves the potential of micro-structured encapsulatingAR<missing VAR>C to improve CPV system performance and shows promise of reliability forsumi-buried microbeads in PDMS as encapsulating AR<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[392.0, 250, 'x', 6],[150.0, 12, 'to', 2],[148.0, 14, '%', 2],[132.0, 15, 'to', 2],[130.0, 19, '%', 2],[55.0, 29.7, '%', 1]

P
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148388, 148388)
 This proves the potential of micro-structured encapsulatingAR<missing VAR>C to improve CPV system performance and shows promise of reliability forsumi-buried microbeads in PDMS as encapsulating AR<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[421.0, 250, 'x', 6],[179.0, 12, 'to', 2],[177.0, 14, '%', 2],[161.0, 15, 'to', 2],[159.0, 19, '%', 2],[84.0, 29.7, '%', 1]

S
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148391, 148391)
 This proves the potential of micro-structured encapsulatingAR<missing VAR>C to improve CPV system performance and shows promise of reliability forsumi-buried microbeads in PDMS as encapsulating AR<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[424.0, 250, 'x', 6],[182.0, 12, 'to', 2],[180.0, 14, '%', 2],[164.0, 15, 'to', 2],[162.0, 19, '%', 2],[87.0, 29.7, '%', 1]

C
###Outdoor Characterization of Solar Cells with Micro-structured Anti-Reflective Coating in a Concentrator Photovoltaic Module|Arnaud J. K. Leoga,Arnaud Ritou,Mathieu Blanchard,Lysandre Dirand,Yanis Prunier,Philippe St-Pierre,David Chuet,Philippe-Olivier Provost,Maite Volatier,Vincent Aimez,Gwenaelle Hamon,Abdelatif Jaouad,Christian Dubuc,Maxime Darnon###
(148399, 148399)
 This proves the potential of micro-structured encapsulatingAR<missing VAR>C to improve CPV system performance and shows promise of reliability forsumi-buried microbeads in PDMS as encapsulating AR<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 250, 'x', 6],[190.0, 12, 'to', 2],[188.0, 14, '%', 2],[172.0, 15, 'to', 2],[170.0, 19, '%', 2],[95.0, 29.7, '%', 1]

P
###Plasmonic multiple exciton generation|Jiantao Kong,Xueyuan Wu,Xin Wang,Michael J Naughton,Krzysztof Kempa###
(148736, 148736)
 This processcan be viewed as plasmon-enhanced multiple exciton generation (PMEG), with theresulting cell efficiency exceeding the Shockley-Queisser limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Plasmonic multiple exciton generation|Jiantao Kong,Xueyuan Wu,Xin Wang,Michael J Naughton,Krzysztof Kempa###
(148779, 148779)
 Wedemonstrate, that efficiency of the PMEG process, increases with decreasing ofthe semiconductor gap size, and illustrate that by considering in detail threesystems with gradually decreasing gap size GaAs, Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Plasmonic multiple exciton generation|Jiantao Kong,Xueyuan Wu,Xin Wang,Michael J Naughton,Krzysztof Kempa###
(148834, 148835)
 Wedemonstrate, that efficiency of the PMEG process, increases with decreasing ofthe semiconductor gap size, and illustrate that by considering in detail threesystems with gradually decreasing gap size GaAs, Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Plasmonic multiple exciton generation|Jiantao Kong,Xueyuan Wu,Xin Wang,Michael J Naughton,Krzysztof Kempa###
(148838, 148838)
 Wedemonstrate, that efficiency of the PMEG process, increases with decreasing ofthe semiconductor gap size, and illustrate that by considering in detail threesystems with gradually decreasing gap size GaAs, Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Plasmonic multiple exciton generation|Jiantao Kong,Xueyuan Wu,Xin Wang,Michael J Naughton,Krzysztof Kempa###
(148842, 148842)
 Wedemonstrate, that efficiency of the PMEG process, increases with decreasing ofthe semiconductor gap size, and illustrate that by considering in detail threesystems with gradually decreasing gap size GaAs, Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Optical Absorption Characteristics of Silicon Nanowires for Photovoltaic Applications|Vidur Parkash,Anand K. Kulkarni###
(149006, 149006)
 In this article we have presented calculationson the optical characteristics of nanowires made out of Silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hot Carrier Solar Cells : In the Making ?|A. Le Bris,L. Lombez,Jean Francois Guillemoles,R. Esteban,M. Laroche,Jj. Greffet,G. Boissier,P. Christol,S. Collin,Jl. Pelouard,P. Aschehoug,F. Pellé###
(149092, 149092)
Hot Carrier Solar Cells  In the Making ?
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###High Efficiency Graphene Solar Cells by Chemical Doping|Xiaochang Miao,Sefaattin Tongay,Maureen K. Petterson,Kara Berke,Andrew G. Rinzler,Bill R. Appleton,Arthur F. Hebard###
(149369, 149369)
 We demonstrate single layer graphene/n<missing VAR>-Si Schottky junction solar cells thatunder AM<missing VAR>1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 8.6, '%', 0],[90.0, 4.5, 'and', 1],[120.0, 6.0, 'Current', 1]

PC
###High Efficiency Graphene Solar Cells by Chemical Doping|Xiaochang Miao,Sefaattin Tongay,Maureen K. Petterson,Kara Berke,Andrew G. Rinzler,Bill R. Appleton,Arthur F. Hebard###
(149401, 149402)
 We demonstrate single layer graphene/n<missing VAR>-Si Schottky junction solar cells thatunder AM<missing VAR>1.5 illumination exhibit a power conversion efficiency (PCE) of 8.6%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 8.6, '%', 0],[57.0, 4.5, 'and', 1],[87.0, 6.0, 'Current', 1]

PC
###High Efficiency Graphene Solar Cells by Chemical Doping|Xiaochang Miao,Sefaattin Tongay,Maureen K. Petterson,Kara Berke,Andrew G. Rinzler,Bill R. Appleton,Arthur F. Hebard###
(149469, 149470)
This performance, achieved by doping the graphene withbis(trifluoromethanesulfonyl)amide, exceeds the native(undoped) deviceperformance by a factor of 4.5 and the best previously reported PCE<missing VAR> in similardevices by a factor of nearly 6. Current-voltage, capacitance-voltage andexternal quantum efficiency measurements show the enhancement to be due to thedoping induced shift in the graphene chemical potential which increases thegraphene carrier density (decreasing the cell series resistance) and increasesthe built-in potential.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 8.6, '%', 1],[10.0, 4.5, 'and', 0],[19.0, 6.0, 'Current', 0]

InGaP/InGaAsP
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149601, 149608)
Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

InGaP/InGaAsP
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149637, 149644)
 The carrier recombination dynamics of InGaP/InGaAsP quantum wells arereported for the first time.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149673, 149673)
 By studying the photoluminescence (PL) andtime-resolved PL<missing VAR> decay of InGaP/InGaAsP multiple-quantum-well(MQW)heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have verylow non-radiative recombination rate and high radiative efficiency compared tothe control InGaP sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149684, 149684)
 By studying the photoluminescence (PL) andtime-resolved PL<missing VAR> decay of InGaP/InGaAsP multiple-quantum-well(MQW)heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have verylow non-radiative recombination rate and high radiative efficiency compared tothe control InGaP sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaP/InGaAsP
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149691, 149698)
 By studying the photoluminescence (PL) andtime-resolved PL<missing VAR> decay of InGaP/InGaAsP multiple-quantum-well(MQW)heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have verylow non-radiative recombination rate and high radiative efficiency compared tothe control InGaP sample.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149708, 149708)
 By studying the photoluminescence (PL) andtime-resolved PL<missing VAR> decay of InGaP/InGaAsP multiple-quantum-well(MQW)heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have verylow non-radiative recombination rate and high radiative efficiency compared tothe control InGaP sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaP/InGaAsP
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149725, 149732)
 By studying the photoluminescence (PL) andtime-resolved PL<missing VAR> decay of InGaP/InGaAsP multiple-quantum-well(MQW)heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have verylow non-radiative recombination rate and high radiative efficiency compared tothe control InGaP sample.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

InGaP
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149770, 149772)
 By studying the photoluminescence (PL) andtime-resolved PL<missing VAR> decay of InGaP/InGaAsP multiple-quantum-well(MQW)heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have verylow non-radiative recombination rate and high radiative efficiency compared tothe control InGaP sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149787, 149787)
 Along with the analyses of PL<missing VAR> emission spectrum andexternal quantum efficiencies, it suggests that this is due to smallconfinement potentials in the conduction band but high confinement potentialsin the valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaP/InGaAsP
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149866, 149873)
 These results explain several features found inInGaP/InGaAsP MQW solar cells previously.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence|K. -H. Lee,K. W. J. Barnham,John S. Roberts,D. Alonso-Alvarez,N. P. Hylton,M. Fuhrer,N. J. Ekins-Daukes###
(149877, 149877)
 These results explain several features found inInGaP/InGaAsP MQW solar cells previously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A single diffractive optical element for implementing spectrum-splitting and beam-concentration functions simultaneously with high diffraction efficiency|Jia-Sheng Ye,Jin-Ze Wang,Qing-Li Huang,Bi-Zhen Dong,Yan Zhang,Guo-Zhen Yang###
(149931, 149931)
 In this paper, a novel method is proposed, and employed to design a singlediffractive optical element (DOE) for implementing spectrum-splitting andbeam-concentration (SSBC) functions simultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SSBC)
###A single diffractive optical element for implementing spectrum-splitting and beam-concentration functions simultaneously with high diffraction efficiency|Jia-Sheng Ye,Jin-Ze Wang,Qing-Li Huang,Bi-Zhen Dong,Yan Zhang,Guo-Zhen Yang###
(149989, 149994)
 In this paper, a novel method is proposed, and employed to design a singlediffractive optical element (DOE) for implementing spectrum-splitting andbeam-concentration (SSBC) functions simultaneously.
Featurization successful!
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSBC
###A single diffractive optical element for implementing spectrum-splitting and beam-concentration functions simultaneously with high diffraction efficiency|Jia-Sheng Ye,Jin-Ze Wang,Qing-Li Huang,Bi-Zhen Dong,Yan Zhang,Guo-Zhen Yang###
(150019, 150022)
 We develop an optimizationalgorithm, through which the SSBC DOE can be optimized within an arbitrarythickness range, according to the limitations of modern photolithographytechnology.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSBC
###A single diffractive optical element for implementing spectrum-splitting and beam-concentration functions simultaneously with high diffraction efficiency|Jia-Sheng Ye,Jin-Ze Wang,Qing-Li Huang,Bi-Zhen Dong,Yan Zhang,Guo-Zhen Yang###
(150078, 150081)
 Theoretical simulation results reveal that the designed SSBC DOEhas a high optical focusing efficiency.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSBC
###A single diffractive optical element for implementing spectrum-splitting and beam-concentration functions simultaneously with high diffraction efficiency|Jia-Sheng Ye,Jin-Ze Wang,Qing-Li Huang,Bi-Zhen Dong,Yan Zhang,Guo-Zhen Yang###
(150113, 150116)
 It is expected that the designed SSBCDOE should have practical applications in high-efficiency solar cell systems.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Quantum Wells in Photovoltaic Cells|C Rohr,P Abbott,I M Ballard,D B Bushnell,J P Connolly,N J Ekins- Daukes,K W J Barnham###
(150383, 150383)
 An alternativeor complementary (see section 1.4) approach is the quantum well cell (Q<missing VAR>WC).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 31, '%', 3],[174.0, 1.35, 'eV', 3]

TiO2
###A Comparison of Anodic TiO2 Nanotube Membranes used for Front-side Illuminated Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Mahmood Moradi,Gihoon Cha,Seulgi So,Kiyoung Lee,Marco Altomare,Patrik Schmuki###
(150668, 150670)
A Comparison of Anodic TiO2 Nanotube Membranes used for Front-side Illuminated Dye-Sensitized Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 8, '%', 3]

In
###A Comparison of Anodic TiO2 Nanotube Membranes used for Front-side Illuminated Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Mahmood Moradi,Gihoon Cha,Seulgi So,Kiyoung Lee,Marco Altomare,Patrik Schmuki###
(150695, 150695)
 In the present work we compare TiO2 nanotube lift-off strategies for theconstruction of front-side illuminated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 8, '%', 2]

TiO2
###A Comparison of Anodic TiO2 Nanotube Membranes used for Front-side Illuminated Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Mahmood Moradi,Gihoon Cha,Seulgi So,Kiyoung Lee,Marco Altomare,Patrik Schmuki###
(150707, 150709)
 In the present work we compare TiO2 nanotube lift-off strategies for theconstruction of front-side illuminated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 8, '%', 2]

Cs
###A Comparison of Anodic TiO2 Nanotube Membranes used for Front-side Illuminated Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Mahmood Moradi,Gihoon Cha,Seulgi So,Kiyoung Lee,Marco Altomare,Patrik Schmuki###
(150746, 150746)
 In the present work we compare TiO2 nanotube lift-off strategies for theconstruction of front-side illuminated dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 8, '%', 2]

F
###A Comparison of Anodic TiO2 Nanotube Membranes used for Front-side Illuminated Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Mahmood Moradi,Gihoon Cha,Seulgi So,Kiyoung Lee,Marco Altomare,Patrik Schmuki###
(150788, 150788)
Anodic nanotube layers were detached from the metallic back contact by usingdifferent techniques and transferred onto an FT<missing VAR>O substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 8, '%', 1]

O
###A Comparison of Anodic TiO2 Nanotube Membranes used for Front-side Illuminated Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Mahmood Moradi,Gihoon Cha,Seulgi So,Kiyoung Lee,Marco Altomare,Patrik Schmuki###
(150790, 150790)
Anodic nanotube layers were detached from the metallic back contact by usingdifferent techniques and transferred onto an FT<missing VAR>O substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 8, '%', 1]

SSC
###A Comparison of Anodic TiO2 Nanotube Membranes used for Front-side Illuminated Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Mahmood Moradi,Gihoon Cha,Seulgi So,Kiyoung Lee,Marco Altomare,Patrik Schmuki###
(150826, 150828)
 We show that if weuse an optimized potential step treatment to fabricate membranes, D<missing VAR>SSC cellefficiencies can be significantly increased (>8%).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 8, '%', 0]

TiO2
###A Comparison of Anodic TiO2 Nanotube Membranes used for Front-side Illuminated Dye-Sensitized Solar Cells|Fatemeh Mohammadpour,Mahmood Moradi,Gihoon Cha,Seulgi So,Kiyoung Lee,Marco Altomare,Patrik Schmuki###
(150888, 150890)
 This improved efficiency isascribed to higher specific dye-loading and enhanced electron transportproperties of optimally fabricated TiO2 nanotube membranes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 8, '%', 1]

(SCs)
###Modeling photoconversion efficiency of perovskite solar cells|A. V. Sachenko,V. P. Kostylyov,A. V. Bobyl,V. M. Vlasyuk,I. O. Sokolovskyi,E. I. Terukov,M. Evstigneev###
(150994, 150997)
 The results of this modeling compare favorablywith the experiment and indicate that the surfaces of the perovskite solarcells (SCs) are naturally textured.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 29, '%', 1],[96.0, 2.0, 'This', 2]

In
###Modeling photoconversion efficiency of perovskite solar cells|A. V. Sachenko,V. P. Kostylyov,A. V. Bobyl,V. M. Vlasyuk,I. O. Sokolovskyi,E. I. Terukov,M. Evstigneev###
(151070, 151070)
 In the realisticcase, the current-voltage curve ideality factor equals 2. This value is not dueto recombination in the space-charge region; rather, it can be explained bytaking into account the effect of the rear surface and high excitation level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 29, '%', 1],[23.0, 2.0, 'This', 0]

(SCs)
###Exploring the Way to Approach the Efficiency Limit of Perovskite Solar Cells by Drift-Diffusion Model|Xingang Ren,Zishuai Wang,Wei E. I. Sha,Wallace C. H. Choy###
(151255, 151258)
 Drift-diffusion model is an indispensable modeling tool to understand thecarrier dynamics (transport, recombination, and collection) and simulatepractical-efficiency of solar cells (SCs) through taking into account variouscarrier recombination losses existing in multilayered device structures.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Exploring the Way to Approach the Efficiency Limit of Perovskite Solar Cells by Drift-Diffusion Model|Xingang Ren,Zishuai Wang,Wei E. I. Sha,Wallace C. H. Choy###
(151305, 151306)
Exploring the way to predict and approach the SC efficiency limit by using thedrift-diffusion model will enable us to gain more physical insights and designguidelines for emerging photovoltaics, particularly perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Exploring the Way to Approach the Efficiency Limit of Perovskite Solar Cells by Drift-Diffusion Model|Xingang Ren,Zishuai Wang,Wei E. I. Sha,Wallace C. H. Choy###
(151396, 151397)
 Ourwork finds out that two procedures are the prerequisites for predicting andapproaching the SC efficiency limit.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Spin orbit coupling and Lorentz force enhanced efficiency of TiO2 based dye sensitized solar cells|U. M. Kannan,M. Venkat Narayana,Ganesh Kotnana,Jaipal Kandhadi,L. Giribabu,Surya Prakash Singh,S. Narayana Jammalamadaka###
(151797, 151799)
Spin orbit coupling and Lorentz force enhanced efficiency of TiO2 based dye sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 13, 'percent', 2]

TiO2
###Spin orbit coupling and Lorentz force enhanced efficiency of TiO2 based dye sensitized solar cells|U. M. Kannan,M. Venkat Narayana,Ganesh Kotnana,Jaipal Kandhadi,L. Giribabu,Surya Prakash Singh,S. Narayana Jammalamadaka###
(151851, 151853)
 We report on the effect of the strong spin orbit coupling and the Lorentzforce on the efficiency of TiO2 based dye sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 13, 'percent', 1]

Ho2O3
###Spin orbit coupling and Lorentz force enhanced efficiency of TiO2 based dye sensitized solar cells|U. M. Kannan,M. Venkat Narayana,Ganesh Kotnana,Jaipal Kandhadi,L. Giribabu,Surya Prakash Singh,S. Narayana Jammalamadaka###
(151873, 151876)
 Uponinclusion of Ho2O3, due to the strong spin orbit coupling of the rare earthHo3+ ion, we do see 13 percent enhancement in the efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 13, 'percent', 0]

V
###Spin orbit coupling and Lorentz force enhanced efficiency of TiO2 based dye sensitized solar cells|U. M. Kannan,M. Venkat Narayana,Ganesh Kotnana,Jaipal Kandhadi,L. Giribabu,Surya Prakash Singh,S. Narayana Jammalamadaka###
(152084, 152084)
 Increase in the absorbance and decrease in thephotoluminescence intensity suggests a decrease in the recombination rate,hinting an enhanced charge transport and is in accordance with ourelectrochemical impedance spectra and the J<missing VAR> V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 13, 'percent', 3]

PC
###Pathways towards 30% efficient single-junction perovskite solar cells and the role of mobile ions|Jonas Diekmann,Pietro Caprioglio,Moritz H. Futscher,Vincent M. Le Corre,Sebastian Reichert,Frank Jaiser,Malavika Arvind,Lorena Perdigon Toro,Emilio Gutierrez-Partida,Francisco Pena-Camargo,Carsten Deibel,Bruno Ehrler,Thomas Unold,Thomas Kirchartz,Dieter Neher,Martin Stolterfoht###
(152368, 152369)
 Perovskite semiconductors have demonstrated outstanding external luminescencequantum yields, enabling high power conversion efficiencies (PCE).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 30, '%', 1],[128.0, 30, '%', 3],[267.0, 10, 'cm', 5],[296.0, 95, '%', 5],[308.0, 31, '%', 6],[323.0, 1.4, 'eV', 6]

V
###Pathways towards 30% efficient single-junction perovskite solar cells and the role of mobile ions|Jonas Diekmann,Pietro Caprioglio,Moritz H. Futscher,Vincent M. Le Corre,Sebastian Reichert,Frank Jaiser,Malavika Arvind,Lorena Perdigon Toro,Emilio Gutierrez-Partida,Francisco Pena-Camargo,Carsten Deibel,Bruno Ehrler,Thomas Unold,Thomas Kirchartz,Dieter Neher,Martin Stolterfoht###
(152653, 152653)
 Importantly, we only consider parameters that havebeen already demonstrated in recent literature, that is a bulk lifetime of 10us, interfacial recombination velocities of 10 cm/s<missing VAR>, a perovskite bandgap of1.5 e<missing VAR>V and an EQE of 95%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 30, '%', 6],[156.0, 30, '%', 2],[17.0, 10, 'cm', 0],[12.0, 95, '%', 0],[24.0, 31, '%', 1],[39.0, 1.4, 'eV', 1]

PC
###Pathways towards 30% efficient single-junction perovskite solar cells and the role of mobile ions|Jonas Diekmann,Pietro Caprioglio,Moritz H. Futscher,Vincent M. Le Corre,Sebastian Reichert,Frank Jaiser,Malavika Arvind,Lorena Perdigon Toro,Emilio Gutierrez-Partida,Francisco Pena-Camargo,Carsten Deibel,Bruno Ehrler,Thomas Unold,Thomas Kirchartz,Dieter Neher,Martin Stolterfoht###
(152758, 152759)
 Thus, the results of this paper promise continuous PCE<missing VAR> improvementsuntil perovskites may become the most efficient single-junction solar celltechnology in the near future.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 30, '%', 9],[261.0, 30, '%', 5],[122.0, 10, 'cm', 3],[93.0, 95, '%', 3],[81.0, 31, '%', 2],[66.0, 1.4, 'eV', 2]

III
###Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions|Moritz Kölbach,Ciler Özen,Oliver Höhn,David Lackner,Markus Feifel,Fatwa F. Abdi,Matthias M. May###
(152839, 152841)
Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 20, '%', 3],[465.0, 1, '%', 7]

V/Si
###Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions|Moritz Kölbach,Ciler Özen,Oliver Höhn,David Lackner,Markus Feifel,Fatwa F. Abdi,Matthias M. May###
(152843, 152845)
Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[150.0, 20, '%', 3],[461.0, 1, '%', 7]

III
###Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions|Moritz Kölbach,Ciler Özen,Oliver Höhn,David Lackner,Markus Feifel,Fatwa F. Abdi,Matthias M. May###
(152867, 152869)
 Recently, significant progress in the development of III-V/Si dual-junctionsolar cells has been achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 20, '%', 2],[437.0, 1, '%', 6]

V/Si
###Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions|Moritz Kölbach,Ciler Özen,Oliver Höhn,David Lackner,Markus Feifel,Fatwa F. Abdi,Matthias M. May###
(152871, 152873)
 Recently, significant progress in the development of III-V/Si dual-junctionsolar cells has been achieved.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[122.0, 20, '%', 2],[433.0, 1, '%', 6]

Si
###Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions|Moritz Kölbach,Ciler Özen,Oliver Höhn,David Lackner,Markus Feifel,Fatwa F. Abdi,Matthias M. May###
(152905, 152905)
 This not only boosts the efficiency of Si-basedphotovoltaic solar cells, but also offers the possibility of highly efficientgreen hydrogen production via solar water splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 20, '%', 1],[401.0, 1, '%', 5]

Si
###Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions|Moritz Kölbach,Ciler Özen,Oliver Höhn,David Lackner,Markus Feifel,Fatwa F. Abdi,Matthias M. May###
(153129, 153129)
 Here, we initiallymodel the influence of the electrolyte layer thickness on the maximumachievable solar-to-hydrogen efficiency of a device with an Si bottom cell andshow how the top absorber bandgap has to be adapted to minimise efficiencylosses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 20, '%', 1],[177.0, 1, '%', 3]

S
###Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions|Moritz Kölbach,Ciler Özen,Oliver Höhn,David Lackner,Markus Feifel,Fatwa F. Abdi,Matthias M. May###
(153292, 153292)
 We show thatfine-tuning of the top absorber bandgap and the water layer thickness can leadto an ST<missing VAR>H efficiency increase of up to 1% absolute.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 20, '%', 4],[14.0, 1, '%', 0]

H
###Counterbalancing light absorption and ionic transport losses in the electrolyte for integrated solar water splitting with III-V/Si dual-junctions|Moritz Kölbach,Ciler Özen,Oliver Höhn,David Lackner,Markus Feifel,Fatwa F. Abdi,Matthias M. May###
(153294, 153294)
 We show thatfine-tuning of the top absorber bandgap and the water layer thickness can leadto an ST<missing VAR>H efficiency increase of up to 1% absolute.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 20, '%', 4],[12.0, 1, '%', 0]

(CdTe)
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153375, 153378)
Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 0.5, 'um', 5],[397.0, 50, 'nm', 6],[427.0, 13.26, '%', 7],[475.0, 27.35, '%', 8],[513.0, 83.68, '%', 9],[550.0, 49.78, 'mA', 9],[571.0, 300, 'K', 10]

(FeSi2)
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153386, 153390)
Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 0.5, 'um', 5],[385.0, 50, 'nm', 6],[415.0, 13.26, '%', 7],[463.0, 27.35, '%', 8],[501.0, 83.68, '%', 9],[538.0, 49.78, 'mA', 9],[559.0, 300, 'K', 10]

CdTe
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153415, 153416)
 Inorganic CdTe and FeSi2-based solar cells have recently drawn a lot ofattention because they offer superior thermal stability and good optoelectronicproperties compared to conventional solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 0.5, 'um', 4],[359.0, 50, 'nm', 5],[389.0, 13.26, '%', 6],[437.0, 27.35, '%', 7],[475.0, 83.68, '%', 8],[512.0, 49.78, 'mA', 8],[533.0, 300, 'K', 9]

FeSi2
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153420, 153422)
 Inorganic CdTe and FeSi2-based solar cells have recently drawn a lot ofattention because they offer superior thermal stability and good optoelectronicproperties compared to conventional solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 0.5, 'um', 4],[353.0, 50, 'nm', 5],[383.0, 13.26, '%', 6],[431.0, 27.35, '%', 7],[469.0, 83.68, '%', 8],[506.0, 49.78, 'mA', 8],[527.0, 300, 'K', 9]

In
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153477, 153477)
 In this work, a uniquealternative technique is presented by using FeSi2 as a secondary absorber layerand In2S3 as the window layer for improving photovoltaic (PV) performanceparameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 0.5, 'um', 3],[298.0, 50, 'nm', 4],[328.0, 13.26, '%', 5],[376.0, 27.35, '%', 6],[414.0, 83.68, '%', 7],[451.0, 49.78, 'mA', 7],[472.0, 300, 'K', 8]

FeSi2
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153501, 153503)
 In this work, a uniquealternative technique is presented by using FeSi2 as a secondary absorber layerand In2S3 as the window layer for improving photovoltaic (PV) performanceparameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 0.5, 'um', 3],[272.0, 50, 'nm', 4],[302.0, 13.26, '%', 5],[350.0, 27.35, '%', 6],[388.0, 83.68, '%', 7],[425.0, 49.78, 'mA', 7],[446.0, 300, 'K', 8]

In2S3
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153518, 153521)
 In this work, a uniquealternative technique is presented by using FeSi2 as a secondary absorber layerand In2S3 as the window layer for improving photovoltaic (PV) performanceparameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0.5, 'um', 3],[254.0, 50, 'nm', 4],[284.0, 13.26, '%', 5],[332.0, 27.35, '%', 6],[370.0, 83.68, '%', 7],[407.0, 49.78, 'mA', 7],[428.0, 300, 'K', 8]

(PV)
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153537, 153540)
 In this work, a uniquealternative technique is presented by using FeSi2 as a secondary absorber layerand In2S3 as the window layer for improving photovoltaic (PV) performanceparameters.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 0.5, 'um', 3],[235.0, 50, 'nm', 4],[265.0, 13.26, '%', 5],[313.0, 27.35, '%', 6],[351.0, 83.68, '%', 7],[388.0, 49.78, 'mA', 7],[409.0, 300, 'K', 8]

SC
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153552, 153553)
 Simulating on SCAPS-1D<missing VAR>, the proposed double-absorber(Cu/FT<missing VAR>O/In2S3/CdTe/FeSi2/Ni) structure is thoroughly examined and analyzed.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.5, 'um', 2],[222.0, 50, 'nm', 3],[252.0, 13.26, '%', 4],[300.0, 27.35, '%', 5],[338.0, 83.68, '%', 6],[375.0, 49.78, 'mA', 6],[396.0, 300, 'K', 7]

PS
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153555, 153556)
 Simulating on SCAPS-1D<missing VAR>, the proposed double-absorber(Cu/FT<missing VAR>O/In2S3/CdTe/FeSi2/Ni) structure is thoroughly examined and analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 0.5, 'um', 2],[219.0, 50, 'nm', 3],[249.0, 13.26, '%', 4],[297.0, 27.35, '%', 5],[335.0, 83.68, '%', 6],[372.0, 49.78, 'mA', 6],[393.0, 300, 'K', 7]

Cu/F
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153572, 153574)
 Simulating on SCAPS-1D<missing VAR>, the proposed double-absorber(Cu/FT<missing VAR>O/In2S3/CdTe/FeSi2/Ni) structure is thoroughly examined and analyzed.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[139.0, 0.5, 'um', 2],[201.0, 50, 'nm', 3],[231.0, 13.26, '%', 4],[279.0, 27.35, '%', 5],[317.0, 83.68, '%', 6],[354.0, 49.78, 'mA', 6],[375.0, 300, 'K', 7]

O/In2S3/CdTe/FeSi2
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153576, 153588)
 Simulating on SCAPS-1D<missing VAR>, the proposed double-absorber(Cu/FT<missing VAR>O/In2S3/CdTe/FeSi2/Ni) structure is thoroughly examined and analyzed.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[125.0, 0.5, 'um', 2],[187.0, 50, 'nm', 3],[217.0, 13.26, '%', 4],[265.0, 27.35, '%', 5],[303.0, 83.68, '%', 6],[340.0, 49.78, 'mA', 6],[361.0, 300, 'K', 7]

Ni
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153590, 153590)
 Simulating on SCAPS-1D<missing VAR>, the proposed double-absorber(Cu/FT<missing VAR>O/In2S3/CdTe/FeSi2/Ni) structure is thoroughly examined and analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0.5, 'um', 2],[185.0, 50, 'nm', 3],[215.0, 13.26, '%', 4],[263.0, 27.35, '%', 5],[301.0, 83.68, '%', 6],[338.0, 49.78, 'mA', 6],[359.0, 300, 'K', 7]

N
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153628, 153628)
 Thewindow layer thickness, absorber layer thickness, acceptor density (NA), donordensity (ND), defect density (Nt), series resistance (R<missing VAR>S), and shunt resistance(Rsh) were simulated in detail for optimization of the above configuration toimprove PV performance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.5, 'um', 1],[147.0, 50, 'nm', 2],[177.0, 13.26, '%', 3],[225.0, 27.35, '%', 4],[263.0, 83.68, '%', 5],[300.0, 49.78, 'mA', 5],[321.0, 300, 'K', 6]

N
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153639, 153639)
 Thewindow layer thickness, absorber layer thickness, acceptor density (NA), donordensity (ND), defect density (Nt), series resistance (R<missing VAR>S), and shunt resistance(Rsh) were simulated in detail for optimization of the above configuration toimprove PV performance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.5, 'um', 1],[136.0, 50, 'nm', 2],[166.0, 13.26, '%', 3],[214.0, 27.35, '%', 4],[252.0, 83.68, '%', 5],[289.0, 49.78, 'mA', 5],[310.0, 300, 'K', 6]

S
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153659, 153659)
 Thewindow layer thickness, absorber layer thickness, acceptor density (NA), donordensity (ND), defect density (Nt), series resistance (R<missing VAR>S), and shunt resistance(Rsh) were simulated in detail for optimization of the above configuration toimprove PV performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.5, 'um', 1],[116.0, 50, 'nm', 2],[146.0, 13.26, '%', 3],[194.0, 27.35, '%', 4],[232.0, 83.68, '%', 5],[269.0, 49.78, 'mA', 5],[290.0, 300, 'K', 6]

PV
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153699, 153700)
 Thewindow layer thickness, absorber layer thickness, acceptor density (NA), donordensity (ND), defect density (Nt), series resistance (R<missing VAR>S), and shunt resistance(Rsh) were simulated in detail for optimization of the above configuration toimprove PV performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.5, 'um', 1],[75.0, 50, 'nm', 2],[105.0, 13.26, '%', 3],[153.0, 27.35, '%', 4],[191.0, 83.68, '%', 5],[228.0, 49.78, 'mA', 5],[249.0, 300, 'K', 6]

CdTe
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153730, 153731)
 According to this study, 0.5 um is the optimizedthickness for both the CdTe and FeSi2 absorber layers in order to maximizeefficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.5, 'um', 0],[44.0, 50, 'nm', 1],[74.0, 13.26, '%', 2],[122.0, 27.35, '%', 3],[160.0, 83.68, '%', 4],[197.0, 49.78, 'mA', 4],[218.0, 300, 'K', 5]

FeSi2
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153735, 153737)
 According to this study, 0.5 um is the optimizedthickness for both the CdTe and FeSi2 absorber layers in order to maximizeefficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.5, 'um', 0],[38.0, 50, 'nm', 1],[68.0, 13.26, '%', 2],[116.0, 27.35, '%', 3],[154.0, 83.68, '%', 4],[191.0, 49.78, 'mA', 4],[212.0, 300, 'K', 5]

CdTe
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153783, 153784)
 Forusing CdTe as a single absorber, the efficiency is achieved by 13.26%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.5, 'um', 2],[8.0, 50, 'nm', 1],[21.0, 13.26, '%', 0],[69.0, 27.35, '%', 1],[107.0, 83.68, '%', 2],[144.0, 49.78, 'mA', 2],[165.0, 300, 'K', 3]

CdTe
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153816, 153817)
 But forusing CdTe and FeSi2 as a dual absorber, the efficiency is enhanced and theobtaining value is 27.35%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.5, 'um', 3],[41.0, 50, 'nm', 2],[11.0, 13.26, '%', 1],[36.0, 27.35, '%', 0],[74.0, 83.68, '%', 1],[111.0, 49.78, 'mA', 1],[132.0, 300, 'K', 2]

FeSi2
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153821, 153823)
 But forusing CdTe and FeSi2 as a dual absorber, the efficiency is enhanced and theobtaining value is 27.35%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.5, 'um', 3],[46.0, 50, 'nm', 2],[16.0, 13.26, '%', 1],[30.0, 27.35, '%', 0],[68.0, 83.68, '%', 1],[105.0, 49.78, 'mA', 1],[126.0, 300, 'K', 2]

(FF)
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153884, 153887)
 The other parameters are also improved and theobtaining values for fill factor (FF) are 83.68%, open-circuit voltage (Voc) is0.6566V, and short circuit current density (J<missing VAR>Sc) is 49.78 mA/cm2.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0.5, 'um', 4],[109.0, 50, 'nm', 3],[79.0, 13.26, '%', 2],[31.0, 27.35, '%', 1],[4.0, 83.68, '%', 0],[41.0, 49.78, 'mA', 0],[62.0, 300, 'K', 1]

V
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153909, 153909)
 The other parameters are also improved and theobtaining values for fill factor (FF) are 83.68%, open-circuit voltage (Voc) is0.6566V, and short circuit current density (J<missing VAR>Sc) is 49.78 mA/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 0.5, 'um', 4],[134.0, 50, 'nm', 3],[104.0, 13.26, '%', 2],[56.0, 27.35, '%', 1],[18.0, 83.68, '%', 0],[19.0, 49.78, 'mA', 0],[40.0, 300, 'K', 1]

Sc
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153924, 153924)
 The other parameters are also improved and theobtaining values for fill factor (FF) are 83.68%, open-circuit voltage (Voc) is0.6566V, and short circuit current density (J<missing VAR>Sc) is 49.78 mA/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0.5, 'um', 4],[149.0, 50, 'nm', 3],[119.0, 13.26, '%', 2],[71.0, 27.35, '%', 1],[33.0, 83.68, '%', 0],[4.0, 49.78, 'mA', 0],[25.0, 300, 'K', 1]

FeSi2
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(153965, 153967)
 The additionof the FeSi2 layer to the cell structure has resulted in a significant quantumefficiency (QE) enhancement because of the rise in solar spectrum absorption atlonger wavelengths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 0.5, 'um', 6],[190.0, 50, 'nm', 5],[160.0, 13.26, '%', 4],[112.0, 27.35, '%', 3],[74.0, 83.68, '%', 2],[37.0, 49.78, 'mA', 2],[16.0, 300, 'K', 1]

CdTe
###Design and numerical investigation of cadmium telluride (CdTe) and iron silicide (FeSi2) based double absorber solar cells to enhance power conversion efficiency|Md. Ferdous Rahman,M. J. A. Habib,Md. Hasan Ali,M. H. K. Rubel,M. Rounakul Islam,Abu Bakar Md. Ismail,M. Khalid Hossain###
(154058, 154059)
 The findings of this work offer a promising approach forproducing high-performance and reasonably priced CdTe-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 0.5, 'um', 7],[283.0, 50, 'nm', 6],[253.0, 13.26, '%', 5],[205.0, 27.35, '%', 4],[167.0, 83.68, '%', 3],[130.0, 49.78, 'mA', 3],[109.0, 300, 'K', 2]

TiO2
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(154554, 154556)
Phosphorene and Doped Monolayers Interfaced TiO2 with Type-II Band Alignments Novel Excitonic Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 98, '%', 6]

II
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(154562, 154563)
Phosphorene and Doped Monolayers Interfaced TiO2 with Type-II Band Alignments Novel Excitonic Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 98, '%', 6]

V
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(154634, 154634)
 Phosphorene, a new elemental two dimensional (2D) material recently isolatedby mechanical exfoliation, holds the feature of a direct band gap of around 2.0e<missing VAR>V, overcoming graphenes<missing VAR> weaknesses (zero band gap) to realize the potentialapplication in optoelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 98, '%', 5]

II
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(154743, 154744)
 Here, we theoretically investigated three type-IIheterostructures based on perfect phosphorene and its doped monolayersinterfaced with TiO2(110) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 98, '%', 3]

O2
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(154771, 154772)
 Here, we theoretically investigated three type-IIheterostructures based on perfect phosphorene and its doped monolayersinterfaced with TiO2(110) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 98, '%', 3]

Cs
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(154853, 154853)
 Threeexcitonic solar cells (X<missing VAR>SCs) based on the phosphorene-TiO2 heterojunctionshave been proposed, which exhibit high power conversion efficiencies dozens oftimes higher than conventional solar cells, comparable to MoS2/WS2 X<missing VAR>SC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 98, '%', 1]

TiO2
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(154864, 154866)
 Threeexcitonic solar cells (X<missing VAR>SCs) based on the phosphorene-TiO2 heterojunctionshave been proposed, which exhibit high power conversion efficiencies dozens oftimes higher than conventional solar cells, comparable to MoS2/WS2 X<missing VAR>SC.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 98, '%', 1]

MoS2/WS2
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(154912, 154918)
 Threeexcitonic solar cells (X<missing VAR>SCs) based on the phosphorene-TiO2 heterojunctionshave been proposed, which exhibit high power conversion efficiencies dozens oftimes higher than conventional solar cells, comparable to MoS2/WS2 X<missing VAR>SC.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[76.0, 98, '%', 1]

SC
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(154921, 154922)
 Threeexcitonic solar cells (X<missing VAR>SCs) based on the phosphorene-TiO2 heterojunctionshave been proposed, which exhibit high power conversion efficiencies dozens oftimes higher than conventional solar cells, comparable to MoS2/WS2 X<missing VAR>SC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 98, '%', 1]

SC
###Phosphorene and Doped Monolayers Interfaced TiO$_2$ with Type-II Band Alignments: Novel Excitonic Solar Cells|Liujiang Zhou,Jin Zhang,Zhiwen Zhuo,Liangzhi Kou,Wei Ma,Bin Shao,Aijun Du,Sheng Meng,Thomas Frauenheim###
(155026, 155027)
The nonadiabatic molecular dynamics within the time-dependent densityfunctional theory framework shows ultrafast electron transfer time of6.1-10.8 fs, and slow electron-hole recombination of 0.58-1.08 ps,yielding >98% quantum efficiency for charge separation, further guaranteeingthe practical power conversion efficiencies in X<missing VAR>SC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 98, '%', 0]

SPC
###Optimization of broadband omnidirectional antireflection coatings for solar cells|Xia Guo,Qiaoli Liu,Chong Li,Hongyi Zhou,Benshun Lv,Yajie Feng,Huaqiang Wang,Wuming Liu###
(155461, 155463)
 Our numerical simulationand comparison data with other optimization methods suggest that thisoptimization method combining ant colony algorithm method with SPCTRL2 solarspectral irradiance can effectively push the efficient solar cell toward higherquantum efficiency, thus enabling high utilization efficiency of solarirradiance.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 300, ',', 2],[108.0, 0.26, '%', 1],[104.0, 1.37, '%', 1],[99.0, 4.24, '%', 1],[93.0, 3, 'cities', 1]

As
###Lifetime enhancement for multi-photon absorption in intermediate band solar cells|Anibal Thiago Bezerra,Nelson Studart###
(155992, 155992)
 As a result,the efficiency in the generation of current was found to be directly correlatedto the relationship between optical generation and recombination ratesregarding to the scattering to the ratchet state rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Hybrid Halide Perovskites: Fundamental Theory and Materials Design|Marina R. Filip,George Volonakis,Feliciano Giustino###
(156397, 156405)
 Theprototypical compound, methylammonium lead iodide, CH3NH3PbI3 is a direct bandgap semiconductor with a band gap in the visible, high charge carrier mobility,long diffusion length and low excitonic binding energy.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2012, 'marked', 3],[134.0, 10, '%', 3],[98.0, 22.7, '%', 2]

CH3NH3PbI3
###Hybrid Halide Perovskites: Fundamental Theory and Materials Design|Marina R. Filip,George Volonakis,Feliciano Giustino###
(156474, 156482)
 Due to these idealproperties, CH3NH3PbI3 is also drawing interest across many other applicationsbeyond photovoltaics, such as light emitting devices, lasers, photocatalystsand transistors.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2012, 'marked', 4],[211.0, 10, '%', 4],[175.0, 22.7, '%', 3]

In
###Hybrid Halide Perovskites: Fundamental Theory and Materials Design|Marina R. Filip,George Volonakis,Feliciano Giustino###
(156624, 156624)
 In this context, ab initio computational modelling canplay a key role in providing a physical interpretation of experimentalmeasurements, and guiding the design of novel halide perovskites with tailoredproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[392.0, 2012, 'marked', 6],[361.0, 10, '%', 6],[325.0, 22.7, '%', 5]

In
###Hybrid Halide Perovskites: Fundamental Theory and Materials Design|Marina R. Filip,George Volonakis,Feliciano Giustino###
(156692, 156692)
 In this chapter we will present an account of the contributions tothis fast developing field of research from our computational modelling group.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[460.0, 2012, 'marked', 7],[429.0, 10, '%', 7],[393.0, 22.7, '%', 6]

TiO2
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(156776, 156778)
Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 52.7, '%', 6],[335.0, 56.7, '%', 7]

As
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(156781, 156781)
 As an appealing concept for developing next-generation solar cells,intermediate-band solar cells (IBSCs) promise to drastically increase thequantum efficiency of photovoltaic conversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 52.7, '%', 5],[332.0, 56.7, '%', 6]

(IBSCs)
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(156811, 156816)
 As an appealing concept for developing next-generation solar cells,intermediate-band solar cells (IBSCs) promise to drastically increase thequantum efficiency of photovoltaic conversion.
Featurization successful!
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 52.7, '%', 5],[297.0, 56.7, '%', 6]

IBSCs
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(156872, 156875)
 Yet to date, a standingchallenge lies in the lack of materials suitable for developing IBSCs.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 52.7, '%', 4],[238.0, 56.7, '%', 5]

I
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(156920, 156920)
Recently, a new doping approach, termed non-compensated n-p codoping, has beenproposed to construct intermediate bands (IBs) in the intrinsic energy bandgaps of oxide semiconductors such as TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 52.7, '%', 3],[193.0, 56.7, '%', 4]

TiO2
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(156947, 156949)
Recently, a new doping approach, termed non-compensated n-p codoping, has beenproposed to construct intermediate bands (IBs) in the intrinsic energy bandgaps of oxide semiconductors such as TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 52.7, '%', 3],[164.0, 56.7, '%', 4]

IBSCs
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(156969, 156972)
 We explore theoretically theoptimal quantum efficiency of IBSCs based on non-compensated n-p codopedTiO2 under two different design schemes.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 52.7, '%', 2],[141.0, 56.7, '%', 3]

TiO2
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(156989, 156991)
 We explore theoretically theoptimal quantum efficiency of IBSCs based on non-compensated n-p codopedTiO2 under two different design schemes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 52.7, '%', 2],[122.0, 56.7, '%', 3]

IB
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(157033, 157034)
 The first preserves the idealcondition that no electrical current be extracted from the IB.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 52.7, '%', 1],[79.0, 56.7, '%', 2]

TiO2
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(157054, 157056)
 Thecorresponding maximum quantum efficiency for the codoped TiO2 can reach52.7%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 52.7, '%', 0],[57.0, 56.7, '%', 1]

In
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(157067, 157067)
 In the second scheme, current is also extracted from the IB, resultingin a further enhancement in the maximum efficiency to 56.7%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 52.7, '%', 1],[46.0, 56.7, '%', 0]

IB
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(157088, 157089)
 In the second scheme, current is also extracted from the IB, resultingin a further enhancement in the maximum efficiency to 56.7%.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 52.7, '%', 1],[24.0, 56.7, '%', 0]

IB
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(157136, 157137)
 Our findings alsorelax the stringent requirement that the IB location be close to the optimumvalue, making it more feasible to realize IBSCs with high quantum efficiencies.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 52.7, '%', 2],[23.0, 56.7, '%', 1]

IBSCs
###Quantum Efficiency of Intermediate-Band Solar Cells Based on Non-Compensated n-p Codoped TiO2|Fengcheng Wu,Haiping Lan,Zhenyu Zhang,Ping Cui###
(157167, 157170)
 Our findings alsorelax the stringent requirement that the IB location be close to the optimumvalue, making it more feasible to realize IBSCs with high quantum efficiencies.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 52.7, '%', 2],[54.0, 56.7, '%', 1]

In
###Photochemical dynamics under incoherent illumination: light harvesting in self-assembled molecular J-aggregates|Luis Felipe Morales-Curiel,Roberto de J. León-Montiel###
(157418, 157418)
 In natural conditions, J<missing VAR>-aggregates would be subjected toan incoherent source of light (as is sunlight), which would illuminate thewhole photosynthetic complex rather than a single molecule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Photochemical dynamics under incoherent illumination: light harvesting in self-assembled molecular J-aggregates|Luis Felipe Morales-Curiel,Roberto de J. León-Montiel###
(157483, 157483)
 In this work, wepresent the first study of the efficiency of photosynthetic energy transport inself-assembled molecular aggregates under incoherent sunlight illumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BO
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(157683, 157684)
Photophysical Properties of BOD<missing VAR>IPY-derivatives for the Implementation of Organic Solar Cells A Computational Approach.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IPY
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(157686, 157688)
Photophysical Properties of BOD<missing VAR>IPY-derivatives for the Implementation of Organic Solar Cells A Computational Approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BO
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(157773, 157774)
 Here, we provide a computationalstudy of power conversion efficiency optimization of BOD<missing VAR>IPY-derivatives bymeans of their associated open circuit voltage, short-circuit density, and fillfactor.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IPY
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(157776, 157778)
 Here, we provide a computationalstudy of power conversion efficiency optimization of BOD<missing VAR>IPY-derivatives bymeans of their associated open circuit voltage, short-circuit density, and fillfactor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(157815, 157815)
 In so doing, we compute for the derivatives geometrical structures,energy levels of frontier molecular orbitals, absorption spectra, lightcollection efficiencies, and exciton binding energies, via density functionaltheory (DFT) and time dependent (TD)--DFT calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BO
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(157925, 157926)
 We fully-characterizefour D<missing VAR>--pi--A (BOD<missing VAR>IPY) molecular systems of high efficiency and improvedJ<missing VAR>sc that are well suited for integration into bulk heterojunction (BHJ)organic solar cells as electron-donor materials in the active layer.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(157930, 157930)
 We fully-characterizefour D<missing VAR>--pi--A (BOD<missing VAR>IPY) molecular systems of high efficiency and improvedJ<missing VAR>sc that are well suited for integration into bulk heterojunction (BHJ)organic solar cells as electron-donor materials in the active layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BH
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(157970, 157971)
 We fully-characterizefour D<missing VAR>--pi--A (BOD<missing VAR>IPY) molecular systems of high efficiency and improvedJ<missing VAR>sc that are well suited for integration into bulk heterojunction (BHJ)organic solar cells as electron-donor materials in the active layer.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(158044, 158045)
 Ourresults are two-fold We found that molecular complexes with an structuralisoxazoline ring exhibit a higher power conversion efficiency (PCE), a usefulresult for improving the BHJ<missing VAR> current, and, on the other hand, by consideringthe molecular systems as electron-acceptor materials, with P3HT<missing VAR> as theelectron-donor in the active layer, we found a high PCE<missing VAR> compound favorabilitywith a pyrrolidine ring in its structure, in contrast to the molecular systemsbuilt with an isoxazoline ring.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BH
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(158063, 158064)
 Ourresults are two-fold We found that molecular complexes with an structuralisoxazoline ring exhibit a higher power conversion efficiency (PCE), a usefulresult for improving the BHJ<missing VAR> current, and, on the other hand, by consideringthe molecular systems as electron-acceptor materials, with P3HT<missing VAR> as theelectron-donor in the active layer, we found a high PCE<missing VAR> compound favorabilitywith a pyrrolidine ring in its structure, in contrast to the molecular systemsbuilt with an isoxazoline ring.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(158104, 158106)
 Ourresults are two-fold We found that molecular complexes with an structuralisoxazoline ring exhibit a higher power conversion efficiency (PCE), a usefulresult for improving the BHJ<missing VAR> current, and, on the other hand, by consideringthe molecular systems as electron-acceptor materials, with P3HT<missing VAR> as theelectron-donor in the active layer, we found a high PCE<missing VAR> compound favorabilitywith a pyrrolidine ring in its structure, in contrast to the molecular systemsbuilt with an isoxazoline ring.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(158135, 158136)
 Ourresults are two-fold We found that molecular complexes with an structuralisoxazoline ring exhibit a higher power conversion efficiency (PCE), a usefulresult for improving the BHJ<missing VAR> current, and, on the other hand, by consideringthe molecular systems as electron-acceptor materials, with P3HT<missing VAR> as theelectron-donor in the active layer, we found a high PCE<missing VAR> compound favorabilitywith a pyrrolidine ring in its structure, in contrast to the molecular systemsbuilt with an isoxazoline ring.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BO
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(158202, 158203)
 The theoretical characterization of theelectronic properties of the BOD<missing VAR>IPY-derivatives here provided, computed with acombination of ab-initio methods and quantum models, can be readily applied toother sets of molecular complexes in order to hierarchize optimal powerconversion efficiency.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IPY
###Photophysical Properties of BODIPY-derivatives for the Implementation of Organic Solar Cells: A Computational Approach|Duvalier Madrid-Usuga,Alejandro Ortiz,John H. Reina###
(158205, 158207)
 The theoretical characterization of theelectronic properties of the BOD<missing VAR>IPY-derivatives here provided, computed with acombination of ab-initio methods and quantum models, can be readily applied toother sets of molecular complexes in order to hierarchize optimal powerconversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Study of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres|S. A. Tomas###
(158302, 158303)
Study of the band--gap shift in CdS films Influence of thermal annealing in different atmospheres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Study of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres|S. A. Tomas###
(158345, 158346)
 We study by photoacoustic spectroscopy the band--gap shift effect of CdSfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Study of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres|S. A. Tomas###
(158354, 158355)
 The CdS films were grown by chemical bath deposition and exposed todifferent annealing atmospheres over a range of temperature in which the samplestructure is observed to change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS/CdTe
###Study of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres|S. A. Tomas###
(158507, 158511)
 It allows usto know a possible procedure to obtain low--resistivity CdS/CdTe solar cellswith high--quantum efficiency.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

BH
###Universality in Intensity Modulated Photocurrent in Bulk-Heterojunction Polymer Solar Cells|Monojit Bag,K. S. Narayan###
(158849, 158850)
 We observe a universal feature in the frequency dependence of intensitymodulated photocurrent Iph based on studies of a variety of efficientbulk-heterojunction polymer solar cells (BHJ<missing VAR>-PSCs).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 5, 'kHz', 1],[44.0, 10, 'kHz', 1]

Cs
###Universality in Intensity Modulated Photocurrent in Bulk-Heterojunction Polymer Solar Cells|Monojit Bag,K. S. Narayan###
(158855, 158855)
 We observe a universal feature in the frequency dependence of intensitymodulated photocurrent Iph based on studies of a variety of efficientbulk-heterojunction polymer solar cells (BHJ<missing VAR>-PSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 5, 'kHz', 1],[39.0, 10, 'kHz', 1]

F
###Universality in Intensity Modulated Photocurrent in Bulk-Heterojunction Polymer Solar Cells|Monojit Bag,K. S. Narayan###
(158955, 158955)
 This feature of Iph appearsin the form of a local maximum in the 5 kHz < frequency < 10 kHz range and isobserved to be largely independent of the external parameters such as modulatedlight intensity (Lac), wavelength, temperature (T), and external field (E<missing VAR>F)over a wide range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 5, 'kHz', 0],[61.0, 10, 'kHz', 0]

InGaN/GaN
###The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell|Saina Haghkish,Asghar Asgari###
(159590, 159595)
The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[175.0, 3, 'samples', 3],[233.0, 3.2, '%', 3]

W
###The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell|Saina Haghkish,Asghar Asgari###
(159599, 159599)
The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 3, 'samples', 3],[229.0, 3.2, '%', 3]

GaN
###The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell|Saina Haghkish,Asghar Asgari###
(159633, 159634)
 Following letter introduces a theoretical approach to investigate the effectof two-step GaN barrier layer growth methodology on the performance ofInGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grownon top of each quantum well followed by a higher temperature GaN barrier layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 3, 'samples', 2],[194.0, 3.2, '%', 2]

InGaN/GaN
###The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell|Saina Haghkish,Asghar Asgari###
(159653, 159658)
 Following letter introduces a theoretical approach to investigate the effectof two-step GaN barrier layer growth methodology on the performance ofInGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grownon top of each quantum well followed by a higher temperature GaN barrier layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[112.0, 3, 'samples', 2],[170.0, 3.2, '%', 2]

W
###The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell|Saina Haghkish,Asghar Asgari###
(159662, 159662)
 Following letter introduces a theoretical approach to investigate the effectof two-step GaN barrier layer growth methodology on the performance ofInGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grownon top of each quantum well followed by a higher temperature GaN barrier layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 3, 'samples', 2],[166.0, 3.2, '%', 2]

GaN
###The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell|Saina Haghkish,Asghar Asgari###
(159679, 159680)
 Following letter introduces a theoretical approach to investigate the effectof two-step GaN barrier layer growth methodology on the performance ofInGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grownon top of each quantum well followed by a higher temperature GaN barrier layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 3, 'samples', 2],[148.0, 3.2, '%', 2]

GaN
###The effects of cap layer thickness on the performance of InGaN/GaN MQW solar cell|Saina Haghkish,Asghar Asgari###
(159713, 159714)
 Following letter introduces a theoretical approach to investigate the effectof two-step GaN barrier layer growth methodology on the performance ofInGaN/GaN MQW solar cell, in which a lower temperature GaN cap layer was grownon top of each quantum well followed by a higher temperature GaN barrier layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3, 'samples', 2],[114.0, 3.2, '%', 2]

Si
###Search for potential precursors for Si-atomic layer deposition- a quantum chemical study|P. Vajeeston,H. Fjellvåg,a,O. Nilsen###
(159860, 159860)
Search for potential precursors for Si-atomic layer deposition- a quantum chemical study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 85, 'Si', 3]

Si
###Search for potential precursors for Si-atomic layer deposition- a quantum chemical study|P. Vajeeston,H. Fjellvåg,a,O. Nilsen###
(159967, 159967)
 The purpose of thisstudy is to screen a wide variety of Si content precursors for Si ALD reactionsusing state-of-the-art density-functional calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 85, 'Si', 1]

Si
###Search for potential precursors for Si-atomic layer deposition- a quantum chemical study|P. Vajeeston,H. Fjellvåg,a,O. Nilsen###
(159975, 159975)
 The purpose of thisstudy is to screen a wide variety of Si content precursors for Si ALD reactionsusing state-of-the-art density-functional calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 85, 'Si', 1]

Si
###Search for potential precursors for Si-atomic layer deposition- a quantum chemical study|P. Vajeeston,H. Fjellvåg,a,O. Nilsen###
(160024, 160024)
 Among the studied 85 Sicontent precursors we found that C7H12OSi(Methoxy-trivinyl-silane) and C7H9NSi(Benzyliminosilane) show positive indications for ALD reactivity for Sideposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 85, 'Si', 0]

C7H9NSi
###Search for potential precursors for Si-atomic layer deposition- a quantum chemical study|P. Vajeeston,H. Fjellvåg,a,O. Nilsen###
(160035, 160040)
 Among the studied 85 Sicontent precursors we found that C7H12OSi(Methoxy-trivinyl-silane) and C7H9NSi(Benzyliminosilane) show positive indications for ALD reactivity for Sideposition.
Featurization terminated normally.
0.5,0,0,0,0,0.3888888888888889,0.05555555555555555,0,0,0,0,0,0,0.05555555555555555,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 85, 'Si', 0]

Si
###Search for potential precursors for Si-atomic layer deposition- a quantum chemical study|P. Vajeeston,H. Fjellvåg,a,O. Nilsen###
(160063, 160063)
 Among the studied 85 Sicontent precursors we found that C7H12OSi(Methoxy-trivinyl-silane) and C7H9NSi(Benzyliminosilane) show positive indications for ALD reactivity for Sideposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 85, 'Si', 0]

In
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160422, 160422)
 In general, perovskite solar cells (PSC) with a sensitized or thin filmarchitecture absorb light from a single illumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 20.1, '%', 2]

(PSC)
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160433, 160437)
 In general, perovskite solar cells (PSC) with a sensitized or thin filmarchitecture absorb light from a single illumination.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 20.1, '%', 2]

PSC
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160475, 160477)
 This paper reported a PSCarchitecture with a semitransparent Au/IT<missing VAR>O counter electrode, which allowslight to pass it partially.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 20.1, '%', 1]

Au/I
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160488, 160490)
 This paper reported a PSCarchitecture with a semitransparent Au/IT<missing VAR>O counter electrode, which allowslight to pass it partially.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[92.0, 20.1, '%', 1]

O
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160492, 160492)
 This paper reported a PSCarchitecture with a semitransparent Au/IT<missing VAR>O counter electrode, which allowslight to pass it partially.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 20.1, '%', 1]

F
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160534, 160534)
 When the device was illuminated simultaneously fromboth the FT<missing VAR>O and Au/IT<missing VAR>O sides, the PSC has achieved an overall power conversionefficiency (PCE) as high as 20.1% under high light intensity (1.4 sun), whichis much higher than that of the single-irradiation system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 20.1, '%', 0]

O
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160536, 160536)
 When the device was illuminated simultaneously fromboth the FT<missing VAR>O and Au/IT<missing VAR>O sides, the PSC has achieved an overall power conversionefficiency (PCE) as high as 20.1% under high light intensity (1.4 sun), whichis much higher than that of the single-irradiation system.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 20.1, '%', 0]

Au/I
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160540, 160542)
 When the device was illuminated simultaneously fromboth the FT<missing VAR>O and Au/IT<missing VAR>O sides, the PSC has achieved an overall power conversionefficiency (PCE) as high as 20.1% under high light intensity (1.4 sun), whichis much higher than that of the single-irradiation system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[40.0, 20.1, '%', 0]

O
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160544, 160544)
 When the device was illuminated simultaneously fromboth the FT<missing VAR>O and Au/IT<missing VAR>O sides, the PSC has achieved an overall power conversionefficiency (PCE) as high as 20.1% under high light intensity (1.4 sun), whichis much higher than that of the single-irradiation system.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 20.1, '%', 0]

PSC
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160551, 160553)
 When the device was illuminated simultaneously fromboth the FT<missing VAR>O and Au/IT<missing VAR>O sides, the PSC has achieved an overall power conversionefficiency (PCE) as high as 20.1% under high light intensity (1.4 sun), whichis much higher than that of the single-irradiation system.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 20.1, '%', 0]

PC
###Exceed Improved Efficient Perovskite Solar Cells Under Dual-Irradiation System|Tao Ye,Xianqiang Li,Shaoyang Ma,Dan Wu,Lei Wei,Xiaohong Tang,Jian Wei Xu,Seeram Ramakrishna,Chellappan Vijila,Xizu Wang###
(160571, 160572)
 When the device was illuminated simultaneously fromboth the FT<missing VAR>O and Au/IT<missing VAR>O sides, the PSC has achieved an overall power conversionefficiency (PCE) as high as 20.1% under high light intensity (1.4 sun), whichis much higher than that of the single-irradiation system.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 20.1, '%', 0]

(NH4)PbI3
###Structural and Electronic Properties of Hybrid Perovskites for High-Efficiency Thin-Film Photovoltaics from First-Principles|Federico Brivio,Alison B. Walker,Aron Walsh###
(160999, 161006)
(NH4)PbI3 and (CH3NH3)PbI3], are largely unknown.
Featurization terminated normally.
0.4444444444444444,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 15, '%', 2]

H3
###Structural and Electronic Properties of Hybrid Perovskites for High-Efficiency Thin-Film Photovoltaics from First-Principles|Federico Brivio,Alison B. Walker,Aron Walsh###
(161015, 161016)
(NH4)PbI3 and (CH3NH3)PbI3], are largely unknown.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 15, '%', 2]

I3
###Structural and Electronic Properties of Hybrid Perovskites for High-Efficiency Thin-Film Photovoltaics from First-Principles|Federico Brivio,Alison B. Walker,Aron Walsh###
(161019, 161020)
(NH4)PbI3 and (CH3NH3)PbI3], are largely unknown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 15, '%', 2]

SnS
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161174, 161175)
Photovoltaic performance of n<missing VAR>-type SnS active layer in IT<missing VAR>O/PEDOT<missing VAR>PSS/SnS/Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161183, 161183)
Photovoltaic performance of n<missing VAR>-type SnS active layer in IT<missing VAR>O/PEDOT<missing VAR>PSS/SnS/Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/P
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161185, 161187)
Photovoltaic performance of n<missing VAR>-type SnS active layer in IT<missing VAR>O/PEDOT<missing VAR>PSS/SnS/Al structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161190, 161190)
Photovoltaic performance of n<missing VAR>-type SnS active layer in IT<missing VAR>O/PEDOT<missing VAR>PSS/SnS/Al structure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSS/SnS/Al
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161192, 161199)
Photovoltaic performance of n<missing VAR>-type SnS active layer in IT<missing VAR>O/PEDOT<missing VAR>PSS/SnS/Al structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161236, 161236)
 The present paper discusses the influence of Tin Sulphides<missing VAR> grain size on theperformance of IT<missing VAR>O/PEDOT<missing VAR>PSS/SnS/Al structured solar cells fabricated bythermal evaporation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/P
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161238, 161240)
 The present paper discusses the influence of Tin Sulphides<missing VAR> grain size on theperformance of IT<missing VAR>O/PEDOT<missing VAR>PSS/SnS/Al structured solar cells fabricated bythermal evaporation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161243, 161243)
 The present paper discusses the influence of Tin Sulphides<missing VAR> grain size on theperformance of IT<missing VAR>O/PEDOT<missing VAR>PSS/SnS/Al structured solar cells fabricated bythermal evaporation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSS/SnS/Al
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161245, 161252)
 The present paper discusses the influence of Tin Sulphides<missing VAR> grain size on theperformance of IT<missing VAR>O/PEDOT<missing VAR>PSS/SnS/Al structured solar cells fabricated bythermal evaporation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SnS
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161304, 161305)
 The grain sizes were maintained in the range of 11-18nmby controlling the thickness of SnS films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnS
###Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure|Priyal Jain,P. Arun###
(161410, 161411)
 While the open circuit voltage (Voc)was found to be a constant for this structure, Parameters such as short circuitcurrent density (Jsc), series resistance (Rs), parallel resistance (Rp),ideality factor and the overall efficiency were found to be dependent on theSnS grain size and incident light intensity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Semiconducting Carbon Nanotubes in Photovoltaic Blends: the case of PTB7:PC60BM:(6,5) SWNT|Diana Gisell Figueroa del Valle,Giuseppe M. Paternò,Francesco Scotognella###
(161487, 161487)
Semiconducting Carbon Nanotubes in Photovoltaic Blends the case of PT<missing VAR>B7PC60BM<missing VAR>(6,5) SWNT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 6, ',', 0],[181.0, 6, ',', 3]

B7PC60B
###Semiconducting Carbon Nanotubes in Photovoltaic Blends: the case of PTB7:PC60BM:(6,5) SWNT|Diana Gisell Figueroa del Valle,Giuseppe M. Paternò,Francesco Scotognella###
(161489, 161494)
Semiconducting Carbon Nanotubes in Photovoltaic Blends the case of PT<missing VAR>B7PC60BM<missing VAR>(6,5) SWNT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.11594202898550725,0.8695652173913043,0,0,0,0,0,0,0,0,0.014492753623188406,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 6, ',', 0],[174.0, 6, ',', 3]

SWN
###Semiconducting Carbon Nanotubes in Photovoltaic Blends: the case of PTB7:PC60BM:(6,5) SWNT|Diana Gisell Figueroa del Valle,Giuseppe M. Paternò,Francesco Scotognella###
(161502, 161504)
Semiconducting Carbon Nanotubes in Photovoltaic Blends the case of PT<missing VAR>B7PC60BM<missing VAR>(6,5) SWNT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 6, ',', 0],[164.0, 6, ',', 3]

P
###Semiconducting Carbon Nanotubes in Photovoltaic Blends: the case of PTB7:PC60BM:(6,5) SWNT|Diana Gisell Figueroa del Valle,Giuseppe M. Paternò,Francesco Scotognella###
(161642, 161642)
 Here, we studied thephotophysics of a ternary system in which the polymer PT<missing VAR>B7 and the fullerenederivative PCBM<missing VAR> are integrated with (6,5) SWNTs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 6, ',', 3],[26.0, 6, ',', 0]

B7
###Semiconducting Carbon Nanotubes in Photovoltaic Blends: the case of PTB7:PC60BM:(6,5) SWNT|Diana Gisell Figueroa del Valle,Giuseppe M. Paternò,Francesco Scotognella###
(161644, 161645)
 Here, we studied thephotophysics of a ternary system in which the polymer PT<missing VAR>B7 and the fullerenederivative PCBM<missing VAR> are integrated with (6,5) SWNTs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 6, ',', 3],[23.0, 6, ',', 0]

PCB
###Semiconducting Carbon Nanotubes in Photovoltaic Blends: the case of PTB7:PC60BM:(6,5) SWNT|Diana Gisell Figueroa del Valle,Giuseppe M. Paternò,Francesco Scotognella###
(161656, 161658)
 Here, we studied thephotophysics of a ternary system in which the polymer PT<missing VAR>B7 and the fullerenederivative PCBM<missing VAR> are integrated with (6,5) SWNTs.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 6, ',', 3],[10.0, 6, ',', 0]

SWN
###Semiconducting Carbon Nanotubes in Photovoltaic Blends: the case of PTB7:PC60BM:(6,5) SWNT|Diana Gisell Figueroa del Valle,Giuseppe M. Paternò,Francesco Scotognella###
(161673, 161675)
 Here, we studied thephotophysics of a ternary system in which the polymer PT<missing VAR>B7 and the fullerenederivative PCBM<missing VAR> are integrated with (6,5) SWNTs.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 6, ',', 3],[5.0, 6, ',', 0]

SWN
###Semiconducting Carbon Nanotubes in Photovoltaic Blends: the case of PTB7:PC60BM:(6,5) SWNT|Diana Gisell Figueroa del Valle,Giuseppe M. Paternò,Francesco Scotognella###
(161690, 161692)
 We highlight the contributionof SWNTs in the exciton dissociation and in the charge transfer process.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 6, ',', 4],[22.0, 6, ',', 1]

GaAs
###Electronic and hole spectra of layered systems of cylindrical rod arrays: solar cell application|J. W. Klos,M. Krawczyk###
(162104, 162105)
 We have computed the electronic and hole spectra of a 3D superlatticeconsisting of layers of GaAs rods of finite height arranged in a hexagonallattice and embedded in an AlGaAs matrix, alternating with spacer layers ofhomogeneous AlAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, 'D', 0]

AlGaAs
###Electronic and hole spectra of layered systems of cylindrical rod arrays: solar cell application|J. W. Klos,M. Krawczyk###
(162134, 162136)
 We have computed the electronic and hole spectra of a 3D superlatticeconsisting of layers of GaAs rods of finite height arranged in a hexagonallattice and embedded in an AlGaAs matrix, alternating with spacer layers ofhomogeneous AlAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3, 'D', 0]

AlAs
###Electronic and hole spectra of layered systems of cylindrical rod arrays: solar cell application|J. W. Klos,M. Krawczyk###
(162154, 162155)
 We have computed the electronic and hole spectra of a 3D superlatticeconsisting of layers of GaAs rods of finite height arranged in a hexagonallattice and embedded in an AlGaAs matrix, alternating with spacer layers ofhomogeneous AlAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 3, 'D', 0]

(SCs)
###The influence of base thickness on textured silicon solar cells' efficiency|A. V. Sachenko,V. P. Kostylyov,A. V. Bobyl,V. N. Vlasiuk,I. O. Sokolovskyi,V. N. Verbitskiy,E. I. Terukov,M. Z. Shvarts,M. Evstigneev###
(162619, 162622)
 The transformation of the long-wavelength edge of the external quantum exit(EQE) formation mechanisms in textured silicon solar cells (SCs) is revealed,depending on their thickness.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 3, 'cm', 3]

SC
###The influence of base thickness on textured silicon solar cells' efficiency|A. V. Sachenko,V. P. Kostylyov,A. V. Bobyl,V. N. Vlasiuk,I. O. Sokolovskyi,V. N. Verbitskiy,E. I. Terukov,M. Z. Shvarts,M. Evstigneev###
(162701, 162702)
 The expressions allow optimal SC base thicknessvalues calculation from the condition of maximal photoconversion efficiencytaking into account surface recombination velocity.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3, 'cm', 1]

In
###The influence of base thickness on textured silicon solar cells' efficiency|A. V. Sachenko,V. P. Kostylyov,A. V. Bobyl,V. N. Vlasiuk,I. O. Sokolovskyi,V. N. Verbitskiy,E. I. Terukov,M. Z. Shvarts,M. Evstigneev###
(162741, 162741)
 In particular, it was foundthat optimal 100-mum<missing VAR> base thickness corresponds to the surface recombinationvelocity of about 3 cm/s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, 'cm', 0]

In
###Insights into the Unusual Semiconducting Behavior in Low-Dimensional Boron|Shao-Gang Xu,Xiao-Tian Li,Yu-Jun Zhao,Wang-Ping Xu,Ji-Hai Liao,Xiu-Wen Zhang,Hu Xu,Xiao-Bao Yang###
(163198, 163198)
 In addition, it is feasible to accomplish bandgap engineering by rationally designing various structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 20, '%', 1]

In
###Towards Photoferroic Materials by Design: Recent Progresses and Perspective|Ivano E. Castelli,Thomas Olsen,Yunzhong Chen###
(163465, 163465)
 In this perspective, we discussthe recent experimental progresses and challenges for the synthesis of thesematerials and the theoretical discovery of novel photoferroic materials using ahigh-throughput approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163803, 163803)
 Upgraded metallurgical-grade (UMG) Si is obtained via a purification routealternative to the one used for conventional polysilicon and with significantlyreduced environmental impact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 600, 'us', 1],[219.0, 20, 'and', 3],[220.0, 250, 'times', 3],[238.0, 645, 'us', 3]

Si
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163808, 163808)
 Upgraded metallurgical-grade (UMG) Si is obtained via a purification routealternative to the one used for conventional polysilicon and with significantlyreduced environmental impact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 600, 'us', 1],[214.0, 20, 'and', 3],[215.0, 250, 'times', 3],[233.0, 645, 'us', 3]

U
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163878, 163878)
 Additionally, despite a lower purity level in thefeedstock than polysilicon, UMG-Si has demonstrated potential for thefabrication of highly efficient and low-cost solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 600, 'us', 2],[144.0, 20, 'and', 2],[145.0, 250, 'times', 2],[163.0, 645, 'us', 2]

Si
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163882, 163882)
 Additionally, despite a lower purity level in thefeedstock than polysilicon, UMG-Si has demonstrated potential for thefabrication of highly efficient and low-cost solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 600, 'us', 2],[140.0, 20, 'and', 2],[141.0, 250, 'times', 2],[159.0, 645, 'us', 2]

U
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163929, 163929)
 Low initial bulkcarrier lifetimes recorded in UMG-Si bare wafers can be improved by means of anadequate Phosphorus Diffusion Gettering (PDG) process to the level of mc-Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 600, 'us', 3],[93.0, 20, 'and', 1],[94.0, 250, 'times', 1],[112.0, 645, 'us', 1]

Si
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163933, 163933)
 Low initial bulkcarrier lifetimes recorded in UMG-Si bare wafers can be improved by means of anadequate Phosphorus Diffusion Gettering (PDG) process to the level of mc-Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 600, 'us', 3],[89.0, 20, 'and', 1],[90.0, 250, 'times', 1],[108.0, 645, 'us', 1]

P
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163963, 163963)
 Low initial bulkcarrier lifetimes recorded in UMG-Si bare wafers can be improved by means of anadequate Phosphorus Diffusion Gettering (PDG) process to the level of mc-Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 600, 'us', 3],[59.0, 20, 'and', 1],[60.0, 250, 'times', 1],[78.0, 645, 'us', 1]

Si
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163980, 163980)
 Low initial bulkcarrier lifetimes recorded in UMG-Si bare wafers can be improved by means of anadequate Phosphorus Diffusion Gettering (PDG) process to the level of mc-Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 600, 'us', 3],[42.0, 20, 'and', 1],[43.0, 250, 'times', 1],[61.0, 645, 'us', 1]

In
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163983, 163983)
 Inthis letter, optimized PDG processes for UMG-Si are reported, resulting inincreased values between 20 and 250 times the original carrier lifetimes andrecord figures above 645 us.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 600, 'us', 4],[39.0, 20, 'and', 0],[40.0, 250, 'times', 0],[58.0, 645, 'us', 0]

P
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(163993, 163993)
 Inthis letter, optimized PDG processes for UMG-Si are reported, resulting inincreased values between 20 and 250 times the original carrier lifetimes andrecord figures above 645 us.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 600, 'us', 4],[29.0, 20, 'and', 0],[30.0, 250, 'times', 0],[48.0, 645, 'us', 0]

U
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(164001, 164001)
 Inthis letter, optimized PDG processes for UMG-Si are reported, resulting inincreased values between 20 and 250 times the original carrier lifetimes andrecord figures above 645 us.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 600, 'us', 4],[21.0, 20, 'and', 0],[22.0, 250, 'times', 0],[40.0, 645, 'us', 0]

Si
###Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering|Nerea Dasilva-Villanueva,Sergio Catalán-Gómez,David Fuertes Marrón,Miguel García-Corpas,Carlos del Cañizo###
(164005, 164005)
 Inthis letter, optimized PDG processes for UMG-Si are reported, resulting inincreased values between 20 and 250 times the original carrier lifetimes andrecord figures above 645 us.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 600, 'us', 4],[17.0, 20, 'and', 0],[18.0, 250, 'times', 0],[36.0, 645, 'us', 0]

In
###Synthesis and optical characterization of perovskite layer for solar cell application|Manoj Pandey,Dipendra Hamal,Bijaya Basnet,Bhim Kafle###
(164141, 164141)
 In the present work, the band gap and reflectance were reducedthrough solvent engineering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.24, 'eV', 1]

F
###Synthesis and optical characterization of perovskite layer for solar cell application|Manoj Pandey,Dipendra Hamal,Bijaya Basnet,Bhim Kafle###
(164191, 164191)
 We found that perovskite thin films produced usingDMF (Dimethyl formamide) solvent had a band gap that was 0.24 eV less thanthose produced using IPA (Isopropyl Alcohol) solvent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.24, 'eV', 0]

IP
###Synthesis and optical characterization of perovskite layer for solar cell application|Manoj Pandey,Dipendra Hamal,Bijaya Basnet,Bhim Kafle###
(164225, 164226)
 We found that perovskite thin films produced usingDMF (Dimethyl formamide) solvent had a band gap that was 0.24 eV less thanthose produced using IPA (Isopropyl Alcohol) solvent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.24, 'eV', 0]

F
###Synthesis and optical characterization of perovskite layer for solar cell application|Manoj Pandey,Dipendra Hamal,Bijaya Basnet,Bhim Kafle###
(164251, 164251)
 Perovskite thin filmsproduced using DMF solvent also exhibited considerably lower solar spectrumreflectance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.24, 'eV', 1]

BCS
###Exciton dissociation mediated by phonons in organic photovoltaics|Stepan Fomichev,Leonard Ruocco,Alexandra Tully,Mona Berciu###
(164353, 164355)
 It is well known that phonons can overscreen the bare Coulombelectron-electron repulsion, turning it into the effective attraction thatbinds the Cooper pairs responsible for BCS superconductivity.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells|Muluneh G. Abebe,Aimi Abass,Guillaume Gomard,Lin Zschiedrich,Uli Lemmer,Bryce S. Richards,Carsten Rockstuhl,Ulrich W. Paetzold###
(164707, 164707)
 To this end, we propose a theoretical framework to calculatethe open-circuit voltage enhancement resulting from photon recycling (DeltaVmathrmPR<missing VAR>mathrmoc) with rigorous wave-optical treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 80, 'mV', 5],[335.0, 240, 'mV', 5],[408.0, 2, '%', 6],[426.0, 100, 'mV', 6]

P
###Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells|Muluneh G. Abebe,Aimi Abass,Guillaume Gomard,Lin Zschiedrich,Uli Lemmer,Bryce S. Richards,Carsten Rockstuhl,Ulrich W. Paetzold###
(164709, 164709)
 To this end, we propose a theoretical framework to calculatethe open-circuit voltage enhancement resulting from photon recycling (DeltaVmathrmPR<missing VAR>mathrmoc) with rigorous wave-optical treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 80, 'mV', 5],[333.0, 240, 'mV', 5],[406.0, 2, '%', 6],[424.0, 100, 'mV', 6]

V
###Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells|Muluneh G. Abebe,Aimi Abass,Guillaume Gomard,Lin Zschiedrich,Uli Lemmer,Bryce S. Richards,Carsten Rockstuhl,Ulrich W. Paetzold###
(164774, 164774)
 We derive an explicit expression for DeltaVmathrmPR<missing VAR>mathrmoc, which reveals its dependence on internalquantum luminescence efficiency, parasitic reabsorption, and on photon escapeprobabilities of reemmited photons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 80, 'mV', 3],[268.0, 240, 'mV', 3],[341.0, 2, '%', 4],[359.0, 100, 'mV', 4]

P
###Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells|Muluneh G. Abebe,Aimi Abass,Guillaume Gomard,Lin Zschiedrich,Uli Lemmer,Bryce S. Richards,Carsten Rockstuhl,Ulrich W. Paetzold###
(164776, 164776)
 We derive an explicit expression for DeltaVmathrmPR<missing VAR>mathrmoc, which reveals its dependence on internalquantum luminescence efficiency, parasitic reabsorption, and on photon escapeprobabilities of reemmited photons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 80, 'mV', 3],[266.0, 240, 'mV', 3],[339.0, 2, '%', 4],[357.0, 100, 'mV', 4]

V
###Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells|Muluneh G. Abebe,Aimi Abass,Guillaume Gomard,Lin Zschiedrich,Uli Lemmer,Bryce S. Richards,Carsten Rockstuhl,Ulrich W. Paetzold###
(164930, 164930)
 We demonstratethe strengths and validity of our framework by determining the impact of photonrecycling on the Vmathrmoc of a conventional planar organo-metal halideperovskite thin-film solar cell and compare it to established reference caseswith perfect antireflection and Lambertian light scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 80, 'mV', 1],[112.0, 240, 'mV', 1],[185.0, 2, '%', 2],[203.0, 100, 'mV', 2]

V
###Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells|Muluneh G. Abebe,Aimi Abass,Guillaume Gomard,Lin Zschiedrich,Uli Lemmer,Bryce S. Richards,Carsten Rockstuhl,Ulrich W. Paetzold###
(164998, 164998)
 Our calculationsreveal Delta VmathrmPR<missing VAR>mathrmoc values of up to 80 mV for theconsidered device stack in the absence of angular restriction and up to 240 mVwhen the escape cone above the cell is restricted tothetamathrmout2.5circ around the cell normal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 80, 'mV', 0],[44.0, 240, 'mV', 0],[117.0, 2, '%', 1],[135.0, 100, 'mV', 1]

P
###Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells|Muluneh G. Abebe,Aimi Abass,Guillaume Gomard,Lin Zschiedrich,Uli Lemmer,Bryce S. Richards,Carsten Rockstuhl,Ulrich W. Paetzold###
(165000, 165000)
 Our calculationsreveal Delta VmathrmPR<missing VAR>mathrmoc values of up to 80 mV for theconsidered device stack in the absence of angular restriction and up to 240 mVwhen the escape cone above the cell is restricted tothetamathrmout2.5circ around the cell normal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 80, 'mV', 0],[42.0, 240, 'mV', 0],[115.0, 2, '%', 1],[133.0, 100, 'mV', 1]

V
###Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells|Muluneh G. Abebe,Aimi Abass,Guillaume Gomard,Lin Zschiedrich,Uli Lemmer,Bryce S. Richards,Carsten Rockstuhl,Ulrich W. Paetzold###
(165125, 165125)
 These improvementsimpose severe constraints on the parasitic absorption as a parasiticreabsorption probability of only 2% reduces the DeltaVmathrmPR<missing VAR>mathrmoc to 100 mV for the same angular restriction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 80, 'mV', 1],[83.0, 240, 'mV', 1],[10.0, 2, '%', 0],[8.0, 100, 'mV', 0]

P
###Rigorous Treatment of Photon Recycling in Thermodynamics of Photovoltaics: The Case of Perovskite Thin-Film Solar Cells|Muluneh G. Abebe,Aimi Abass,Guillaume Gomard,Lin Zschiedrich,Uli Lemmer,Bryce S. Richards,Carsten Rockstuhl,Ulrich W. Paetzold###
(165127, 165127)
 These improvementsimpose severe constraints on the parasitic absorption as a parasiticreabsorption probability of only 2% reduces the DeltaVmathrmPR<missing VAR>mathrmoc to 100 mV for the same angular restriction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 80, 'mV', 1],[85.0, 240, 'mV', 1],[12.0, 2, '%', 0],[6.0, 100, 'mV', 0]

In
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165201, 165201)
 In conventional solar cell semiconductor materials (predominantly Si) photonswith energy higher than the band gap initially generate hot electrons andholes, which subsequently cool down to the band edge by phonon emission.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165216, 165216)
 In conventional solar cell semiconductor materials (predominantly Si) photonswith energy higher than the band gap initially generate hot electrons andholes, which subsequently cool down to the band edge by phonon emission.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165392, 165392)
 If the excess energy is more than the band gap it can inprinciple be utilized through a process known as carrier multiplication (CM) inwhich a single absorbed photon generates two (or more) pairs of electrons andholes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165436, 165436)
 Thus, through CM<missing VAR> the photon energy above twice the band gap enhances thephotocurrent of a solar cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165471, 165471)
 In this review, we discuss recent progress in CM<missing VAR>research in terms of fundamental understanding, emergence of new materials forefficient CM<missing VAR>, and CM<missing VAR> based solar cell applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165488, 165488)
 In this review, we discuss recent progress in CM<missing VAR>research in terms of fundamental understanding, emergence of new materials forefficient CM<missing VAR>, and CM<missing VAR> based solar cell applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165518, 165518)
 In this review, we discuss recent progress in CM<missing VAR>research in terms of fundamental understanding, emergence of new materials forefficient CM<missing VAR>, and CM<missing VAR> based solar cell applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165524, 165524)
 In this review, we discuss recent progress in CM<missing VAR>research in terms of fundamental understanding, emergence of new materials forefficient CM<missing VAR>, and CM<missing VAR> based solar cell applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165550, 165550)
 Based on our currentunderstanding, the CM<missing VAR> threshold can get close to the minimal value of twice theband gap in materials where a photon induces an asymmetric electronictransition from a deeper valence band or to a higher conduction band.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165624, 165624)
 Inaddition, the material must have a low exciton binding energy and high chargecarrier mobility, so that photoexcitation leads directly to the formation offree charges that can readily be extracted at external electrodes of aphotovoltaic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbSe
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165717, 165718)
 Percolative networks of coupled PbSe quantum dots, Sn/Pbbased halide perovskites, and transition metal dichalcogenides such as MoTe2fulfill these requirements to a large extent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn/Pb
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165725, 165727)
 Percolative networks of coupled PbSe quantum dots, Sn/Pbbased halide perovskites, and transition metal dichalcogenides such as MoTe2fulfill these requirements to a large extent.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MoTe2
###Emergence of New Materials for Exploiting Highly Efficient Carrier Multiplication in Photovoltaics|Sourav Maiti,Marco van der Laan,Deepika Poonia,Peter Schall,Sachin Kinge,Laurens D. A. Siebbeles###
(165749, 165751)
 Percolative networks of coupled PbSe quantum dots, Sn/Pbbased halide perovskites, and transition metal dichalcogenides such as MoTe2fulfill these requirements to a large extent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies|Rita Maji,Eleonora Luppi,Nathalie Capron,Elena Degoli###
(165971, 165971)
 G<missing VAR>Bs can inducecharge carriers recombination significantly reducing carrier lifetimes andtherefore they can be detrimental for Si device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies|Rita Maji,Eleonora Luppi,Nathalie Capron,Elena Degoli###
(166007, 166007)
 We studied thecorrelation between structural, energetic and electronic properties ofSigma3111 Si G<missing VAR>B in the presence of vacancies, strain and multiple Osegregation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies|Rita Maji,Eleonora Luppi,Nathalie Capron,Elena Degoli###
(166010, 166010)
 We studied thecorrelation between structural, energetic and electronic properties ofSigma3111 Si G<missing VAR>B in the presence of vacancies, strain and multiple Osegregation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies|Rita Maji,Eleonora Luppi,Nathalie Capron,Elena Degoli###
(166029, 166029)
 We studied thecorrelation between structural, energetic and electronic properties ofSigma3111 Si G<missing VAR>B in the presence of vacancies, strain and multiple Osegregation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies|Rita Maji,Eleonora Luppi,Nathalie Capron,Elena Degoli###
(166132, 166132)
 We analysed tensileand compressive strain and we obtained that local tensile strain around Oimpurities is very effective for segregation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies|Rita Maji,Eleonora Luppi,Nathalie Capron,Elena Degoli###
(166163, 166163)
 We also studied the role ofmultiple O impurities in the presence of Si vacancies finding that thesegregation is favorite for those structures which have restored tetrahedralcovalent bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies|Rita Maji,Eleonora Luppi,Nathalie Capron,Elena Degoli###
(166175, 166175)
 We also studied the role ofmultiple O impurities in the presence of Si vacancies finding that thesegregation is favorite for those structures which have restored tetrahedralcovalent bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies|Rita Maji,Eleonora Luppi,Nathalie Capron,Elena Degoli###
(166287, 166287)
 This analysis was the starting point to correlate the change ofthe electronic properties in Sigma3111Si G<missing VAR>Bs with O impurities in thepresence of strain and vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Ab initio study of oxygen segregation in silicon grain boundaries: the role of strain and vacancies|Rita Maji,Eleonora Luppi,Nathalie Capron,Elena Degoli###
(166294, 166294)
 This analysis was the starting point to correlate the change ofthe electronic properties in Sigma3111Si G<missing VAR>Bs with O impurities in thepresence of strain and vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166505, 166505)
 Light trapping in sub-wavelength semiconductor nanowires (NWs) offers apromising approach to simultaneously reducing material consumption andenhancing photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1, 'in', 1],[170.0, 350, '%', 2],[373.0, 11, ',', 4]

NW
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166552, 166553)
 Nevertheless, the absorption efficiency ofa NW, defined by the ratio of optical absorption cross section to the NWdiameter, lingers around 1 in existing NW photonic devices, and the absorptionenhancement suffers from a narrow spectral width.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1, 'in', 0],[122.0, 350, '%', 1],[325.0, 11, ',', 3]

NW
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166578, 166579)
 Nevertheless, the absorption efficiency ofa NW, defined by the ratio of optical absorption cross section to the NWdiameter, lingers around 1 in existing NW photonic devices, and the absorptionenhancement suffers from a narrow spectral width.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1, 'in', 0],[96.0, 350, '%', 1],[299.0, 11, ',', 3]

NW
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166592, 166593)
 Nevertheless, the absorption efficiency ofa NW, defined by the ratio of optical absorption cross section to the NWdiameter, lingers around 1 in existing NW photonic devices, and the absorptionenhancement suffers from a narrow spectral width.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1, 'in', 0],[82.0, 350, '%', 1],[285.0, 11, ',', 3]

N
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166648, 166648)
 Here, we show that theabsorption efficiency can be significantly improved in NWs with higherrefractive indices, by an experimental observation of up to 350% externalquantum efficiency (EQE) in lead sulfide (PbS) NW resonators, a 3-fold increasecompared to Si NWs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1, 'in', 1],[27.0, 350, '%', 0],[230.0, 11, ',', 2]

(PbS)
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166697, 166700)
 Here, we show that theabsorption efficiency can be significantly improved in NWs with higherrefractive indices, by an experimental observation of up to 350% externalquantum efficiency (EQE) in lead sulfide (PbS) NW resonators, a 3-fold increasecompared to Si NWs.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 1, 'in', 1],[22.0, 350, '%', 0],[178.0, 11, ',', 2]

NW
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166702, 166703)
 Here, we show that theabsorption efficiency can be significantly improved in NWs with higherrefractive indices, by an experimental observation of up to 350% externalquantum efficiency (EQE) in lead sulfide (PbS) NW resonators, a 3-fold increasecompared to Si NWs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 1, 'in', 1],[27.0, 350, '%', 0],[175.0, 11, ',', 2]

Si
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166721, 166721)
 Here, we show that theabsorption efficiency can be significantly improved in NWs with higherrefractive indices, by an experimental observation of up to 350% externalquantum efficiency (EQE) in lead sulfide (PbS) NW resonators, a 3-fold increasecompared to Si NWs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1, 'in', 1],[46.0, 350, '%', 0],[157.0, 11, ',', 2]

N
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166723, 166723)
 Here, we show that theabsorption efficiency can be significantly improved in NWs with higherrefractive indices, by an experimental observation of up to 350% externalquantum efficiency (EQE) in lead sulfide (PbS) NW resonators, a 3-fold increasecompared to Si NWs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 1, 'in', 1],[48.0, 350, '%', 0],[155.0, 11, ',', 2]

N
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166747, 166747)
 Furthermore, broadband absorption enhancement is achievedin single tapered NWs, where light of various wavelengths is absorbed atsegments with different diameters analogous to a tandem solar cell.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 1, 'in', 2],[72.0, 350, '%', 1],[131.0, 11, ',', 1]

NW
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166797, 166798)
 Overall,the single NW Schottky junction solar cells benefit from optical resonance,near bandgap open circuit voltage, and long minority carrier diffusion length,demonstrating power conversion efficiency (PCE) comparable to single Si NWcoaxial p-n junction cells11, but with much simpler fabrication processes.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 1, 'in', 3],[122.0, 350, '%', 2],[80.0, 11, ',', 0]

PC
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166852, 166853)
 Overall,the single NW Schottky junction solar cells benefit from optical resonance,near bandgap open circuit voltage, and long minority carrier diffusion length,demonstrating power conversion efficiency (PCE) comparable to single Si NWcoaxial p-n junction cells11, but with much simpler fabrication processes.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 1, 'in', 3],[177.0, 350, '%', 2],[25.0, 11, ',', 0]

Si
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166863, 166863)
 Overall,the single NW Schottky junction solar cells benefit from optical resonance,near bandgap open circuit voltage, and long minority carrier diffusion length,demonstrating power conversion efficiency (PCE) comparable to single Si NWcoaxial p-n junction cells11, but with much simpler fabrication processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 1, 'in', 3],[188.0, 350, '%', 2],[15.0, 11, ',', 0]

NW
###Broadband Quantum Efficiency Enhancement in High Index Nanowires Resonators|Yiming Yang,Xingyue Peng,Steven Hyatt,Dong Yu###
(166865, 166866)
 Overall,the single NW Schottky junction solar cells benefit from optical resonance,near bandgap open circuit voltage, and long minority carrier diffusion length,demonstrating power conversion efficiency (PCE) comparable to single Si NWcoaxial p-n junction cells11, but with much simpler fabrication processes.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 1, 'in', 3],[190.0, 350, '%', 2],[12.0, 11, ',', 0]

C
###Highly Efficient Carrier Multiplication in van der Waals layered Materials|Ji-Hee Kim,Matthew R. Bergren,Jin Cheol Park,Subash Adhikari,Michael Lorke,Thomas Fraunheim,Duk-Hyun Choe,Beom Kim,Hyunyong Choi,Tom Gregorkiewicz,Young Hee Lee###
(166928, 166928)
 Carrier multiplication (CM), a photo-physical process to generate multipleelectron-hole pairs by exploiting excess energy of free carriers, is exploredfor efficient photovoltaic conversion of photons from the blue solar band,predominantly wasted as heat in standard solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 100, '%', 2]

C
###Highly Efficient Carrier Multiplication in van der Waals layered Materials|Ji-Hee Kim,Matthew R. Bergren,Jin Cheol Park,Subash Adhikari,Michael Lorke,Thomas Fraunheim,Duk-Hyun Choe,Beom Kim,Hyunyong Choi,Tom Gregorkiewicz,Young Hee Lee###
(167038, 167038)
 Current state-of-the-artapproaches with nanomaterials have demonstrated improved CM<missing VAR> but are notsatisfactory due to high energy loss and inherent difficulties with carrierextraction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 100, '%', 1]

C
###Highly Efficient Carrier Multiplication in van der Waals layered Materials|Ji-Hee Kim,Matthew R. Bergren,Jin Cheol Park,Subash Adhikari,Michael Lorke,Thomas Fraunheim,Duk-Hyun Choe,Beom Kim,Hyunyong Choi,Tom Gregorkiewicz,Young Hee Lee###
(167085, 167085)
 Here, we report ultra-efficient CM<missing VAR> in van der Waals (vdW) layeredmaterials that commences at the energy conservation limit and proceeds withnearly 100% conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 100, '%', 0]

W
###Highly Efficient Carrier Multiplication in van der Waals layered Materials|Ji-Hee Kim,Matthew R. Bergren,Jin Cheol Park,Subash Adhikari,Michael Lorke,Thomas Fraunheim,Duk-Hyun Choe,Beom Kim,Hyunyong Choi,Tom Gregorkiewicz,Young Hee Lee###
(167098, 167098)
 Here, we report ultra-efficient CM<missing VAR> in van der Waals (vdW) layeredmaterials that commences at the energy conservation limit and proceeds withnearly 100% conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 100, '%', 0]

W
###Highly Efficient Carrier Multiplication in van der Waals layered Materials|Ji-Hee Kim,Matthew R. Bergren,Jin Cheol Park,Subash Adhikari,Michael Lorke,Thomas Fraunheim,Duk-Hyun Choe,Beom Kim,Hyunyong Choi,Tom Gregorkiewicz,Young Hee Lee###
(167203, 167203)
 Strong Coulomb interactions between electrons confinedwithin vdW layers allow rapid electron-electron scattering to prevail overelectron-phonon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 100, '%', 2]

C
###Highly Efficient Carrier Multiplication in van der Waals layered Materials|Ji-Hee Kim,Matthew R. Bergren,Jin Cheol Park,Subash Adhikari,Michael Lorke,Thomas Fraunheim,Duk-Hyun Choe,Beom Kim,Hyunyong Choi,Tom Gregorkiewicz,Young Hee Lee###
(167265, 167265)
 Additionally, the presence of electron pocketsspread over momentum space could also contribute to the high CM<missing VAR> efficiency.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 100, '%', 3]

C
###Highly Efficient Carrier Multiplication in van der Waals layered Materials|Ji-Hee Kim,Matthew R. Bergren,Jin Cheol Park,Subash Adhikari,Michael Lorke,Thomas Fraunheim,Duk-Hyun Choe,Beom Kim,Hyunyong Choi,Tom Gregorkiewicz,Young Hee Lee###
(167291, 167291)
Combining with high conductivity and optimal bandgap, these superior CM<missing VAR>characteristics identify vdW materials for third-generation solar cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 100, '%', 4]

W
###Highly Efficient Carrier Multiplication in van der Waals layered Materials|Ji-Hee Kim,Matthew R. Bergren,Jin Cheol Park,Subash Adhikari,Michael Lorke,Thomas Fraunheim,Duk-Hyun Choe,Beom Kim,Hyunyong Choi,Tom Gregorkiewicz,Young Hee Lee###
(167300, 167300)
Combining with high conductivity and optimal bandgap, these superior CM<missing VAR>characteristics identify vdW materials for third-generation solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 100, '%', 4]

CV
###Colloidal Quantum Dot Tandem Solar Cells Using CVD Graphene as An Atomically Thin Intermediate Recombination Layer|Yu Bi,Santanu Pradhan,Mehmet Zafer Akgul,Shuchi Gupta,Alexandros Stavrinadis,Jianjun Wang,Gerasimos Konstantatos###
(167769, 167770)
Colloidal Quantum Dot Tandem Solar Cells Using CVD<missing VAR> Graphene as An Atomically Thin Intermediate Recombination Layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 1.4, 'and', 8],[383.0, 0.95, 'eV', 8],[402.0, 7, '%', 8]

I
###Colloidal Quantum Dot Tandem Solar Cells Using CVD Graphene as An Atomically Thin Intermediate Recombination Layer|Yu Bi,Santanu Pradhan,Mehmet Zafer Akgul,Shuchi Gupta,Alexandros Stavrinadis,Jianjun Wang,Gerasimos Konstantatos###
(167919, 167919)
 Secondlyidentifying the appropriate intermediate layer (IML) to connect the subcells isnecessary to minimize the optical and electronic losses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 1.4, 'and', 4],[234.0, 0.95, 'eV', 4],[253.0, 7, '%', 4]

PbS
###Colloidal Quantum Dot Tandem Solar Cells Using CVD Graphene as An Atomically Thin Intermediate Recombination Layer|Yu Bi,Santanu Pradhan,Mehmet Zafer Akgul,Shuchi Gupta,Alexandros Stavrinadis,Jianjun Wang,Gerasimos Konstantatos###
(167952, 167953)
 PbS colloidal quantumdots (CQ<missing VAR>Ds) are a notable choice for the subcells due to their low cost,solution processibility and remarkable wide range band gap tunability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 1.4, 'and', 3],[200.0, 0.95, 'eV', 3],[219.0, 7, '%', 3]

C
###Colloidal Quantum Dot Tandem Solar Cells Using CVD Graphene as An Atomically Thin Intermediate Recombination Layer|Yu Bi,Santanu Pradhan,Mehmet Zafer Akgul,Shuchi Gupta,Alexandros Stavrinadis,Jianjun Wang,Gerasimos Konstantatos###
(167963, 167963)
 PbS colloidal quantumdots (CQ<missing VAR>Ds) are a notable choice for the subcells due to their low cost,solution processibility and remarkable wide range band gap tunability.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 1.4, 'and', 3],[190.0, 0.95, 'eV', 3],[209.0, 7, '%', 3]

Ds
###Colloidal Quantum Dot Tandem Solar Cells Using CVD Graphene as An Atomically Thin Intermediate Recombination Layer|Yu Bi,Santanu Pradhan,Mehmet Zafer Akgul,Shuchi Gupta,Alexandros Stavrinadis,Jianjun Wang,Gerasimos Konstantatos###
(167965, 167965)
 PbS colloidal quantumdots (CQ<missing VAR>Ds) are a notable choice for the subcells due to their low cost,solution processibility and remarkable wide range band gap tunability.
EXCEPTION 3: IndexError for Ds
I
[187.0, 1.4, 'and', 3],[188.0, 0.95, 'eV', 3],[207.0, 7, '%', 3]

BH
###Sequentially Deposited versus Conventional Nonfullerene Organic Solar Cells: Interfacial Trap States, Vertical Stratification, and Exciton Dissociation|Jiangbin Zhang,Moritz H. Futscher,Vincent Lami,Felix U. Kosasih,Changsoon Cho,Qinying Gu,Aditya Sadhanala,Andrew J. Pearson,Bin Kan,Giorgio Divitini,Xiangjian Wan,Daniel Credgington,Neil C. Greenham,Yongsheng Chen,Caterina Ducati,Bruno Ehrler,Yana Vaynzof,Richard H. Friend,Artem A. Bakulin###
(168244, 168245)
 Bulk-heterojunction (BHJ) non-fullerene organic solar cells prepared fromsequentially deposited donor and acceptor layers (sq-BHJ) have recently beenpromising to be highly efficient, environmentally friendly, and compatible withlarge area and roll-to-toll fabrication.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 50, '%', 3]

BH
###Sequentially Deposited versus Conventional Nonfullerene Organic Solar Cells: Interfacial Trap States, Vertical Stratification, and Exciton Dissociation|Jiangbin Zhang,Moritz H. Futscher,Vincent Lami,Felix U. Kosasih,Changsoon Cho,Qinying Gu,Aditya Sadhanala,Andrew J. Pearson,Bin Kan,Giorgio Divitini,Xiangjian Wan,Daniel Credgington,Neil C. Greenham,Yongsheng Chen,Caterina Ducati,Bruno Ehrler,Yana Vaynzof,Richard H. Friend,Artem A. Bakulin###
(168279, 168280)
 Bulk-heterojunction (BHJ) non-fullerene organic solar cells prepared fromsequentially deposited donor and acceptor layers (sq-BHJ) have recently beenpromising to be highly efficient, environmentally friendly, and compatible withlarge area and roll-to-toll fabrication.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 50, '%', 3]

BH
###Sequentially Deposited versus Conventional Nonfullerene Organic Solar Cells: Interfacial Trap States, Vertical Stratification, and Exciton Dissociation|Jiangbin Zhang,Moritz H. Futscher,Vincent Lami,Felix U. Kosasih,Changsoon Cho,Qinying Gu,Aditya Sadhanala,Andrew J. Pearson,Bin Kan,Giorgio Divitini,Xiangjian Wan,Daniel Credgington,Neil C. Greenham,Yongsheng Chen,Caterina Ducati,Bruno Ehrler,Yana Vaynzof,Richard H. Friend,Artem A. Bakulin###
(168486, 168487)
Correlation with the luminescent efficiency of interfacial states and itsnon-radiative recombination, interfacial trap states are characterized to beabout 50% more populated in the sq-BHJ<missing VAR> than as-cast BHJ<missing VAR> (c<missing VAR>-BHJ), which probablylimits the device voltage output.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 50, '%', 0]

BH
###Sequentially Deposited versus Conventional Nonfullerene Organic Solar Cells: Interfacial Trap States, Vertical Stratification, and Exciton Dissociation|Jiangbin Zhang,Moritz H. Futscher,Vincent Lami,Felix U. Kosasih,Changsoon Cho,Qinying Gu,Aditya Sadhanala,Andrew J. Pearson,Bin Kan,Giorgio Divitini,Xiangjian Wan,Daniel Credgington,Neil C. Greenham,Yongsheng Chen,Caterina Ducati,Bruno Ehrler,Yana Vaynzof,Richard H. Friend,Artem A. Bakulin###
(168496, 168497)
Correlation with the luminescent efficiency of interfacial states and itsnon-radiative recombination, interfacial trap states are characterized to beabout 50% more populated in the sq-BHJ<missing VAR> than as-cast BHJ<missing VAR> (c<missing VAR>-BHJ), which probablylimits the device voltage output.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 50, '%', 0]

BH
###Sequentially Deposited versus Conventional Nonfullerene Organic Solar Cells: Interfacial Trap States, Vertical Stratification, and Exciton Dissociation|Jiangbin Zhang,Moritz H. Futscher,Vincent Lami,Felix U. Kosasih,Changsoon Cho,Qinying Gu,Aditya Sadhanala,Andrew J. Pearson,Bin Kan,Giorgio Divitini,Xiangjian Wan,Daniel Credgington,Neil C. Greenham,Yongsheng Chen,Caterina Ducati,Bruno Ehrler,Yana Vaynzof,Richard H. Friend,Artem A. Bakulin###
(168503, 168504)
Correlation with the luminescent efficiency of interfacial states and itsnon-radiative recombination, interfacial trap states are characterized to beabout 50% more populated in the sq-BHJ<missing VAR> than as-cast BHJ<missing VAR> (c<missing VAR>-BHJ), which probablylimits the device voltage output.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 50, '%', 0]

(PSCs)
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168730, 168734)
 While perovskite solar cells (PSCs) are now reaching high power conversionefficiencies (PCEs), further performance improvement requires a fine managementand an optimization of the light pathway and harvesting in the cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 1, 'D', 6]

(PCEs)
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168751, 168755)
 While perovskite solar cells (PSCs) are now reaching high power conversionefficiencies (PCEs), further performance improvement requires a fine managementand an optimization of the light pathway and harvesting in the cells.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[335.0, 1, 'D', 6]

In
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168849, 168849)
 In the present work, we have considered a typical methylammonium leadiodide (M<missing VAR>API) solar cell built on a fluorine-doped tin oxide (FT<missing VAR>O) electrode ofhigh roughness (43 nm RMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 1, 'D', 4]

I
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168879, 168879)
 In the present work, we have considered a typical methylammonium leadiodide (M<missing VAR>API) solar cell built on a fluorine-doped tin oxide (FT<missing VAR>O) electrode ofhigh roughness (43 nm RMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 1, 'D', 4]

F
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168901, 168901)
 In the present work, we have considered a typical methylammonium leadiodide (M<missing VAR>API) solar cell built on a fluorine-doped tin oxide (FT<missing VAR>O) electrode ofhigh roughness (43 nm RMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 1, 'D', 4]

O
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168903, 168903)
 In the present work, we have considered a typical methylammonium leadiodide (M<missing VAR>API) solar cell built on a fluorine-doped tin oxide (FT<missing VAR>O) electrode ofhigh roughness (43 nm RMS).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 1, 'D', 4]

S
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168922, 168922)
 In the present work, we have considered a typical methylammonium leadiodide (M<missing VAR>API) solar cell built on a fluorine-doped tin oxide (FT<missing VAR>O) electrode ofhigh roughness (43 nm RMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1, 'D', 4]

V
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168937, 168937)
 By variable-angle spectroscopic ellipsometry (VASE)of the full PSC device, we have been able to determine the optical constants ofall the device layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 1, 'D', 3]

S
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168939, 168939)
 By variable-angle spectroscopic ellipsometry (VASE)of the full PSC device, we have been able to determine the optical constants ofall the device layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 1, 'D', 3]

PSC
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(168950, 168952)
 By variable-angle spectroscopic ellipsometry (VASE)of the full PSC device, we have been able to determine the optical constants ofall the device layers.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1, 'D', 3]

F
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(169110, 169110)
 We show that the 1D model, while insufficient to describescattering by the FT<missing VAR>O plate alone, gives an accurate description of the fulldevice optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1, 'D', 0]

O
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(169112, 169112)
 We show that the 1D model, while insufficient to describescattering by the FT<missing VAR>O plate alone, gives an accurate description of the fulldevice optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1, 'D', 0]

I
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(169178, 169178)
 By comparison with the experimental external quantumefficiency (EQE), we estimate the internal quantum efficiency (IQE) and theeffect of the losses related to electron transfer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1, 'D', 1]

PSC
###Light management in highly-textured perovskite solar cells: From full-device ellipsometry characterization to optical modelling for quantum efficiency optimization|Chenxi Ma,Daming Zheng,Dominique Demaille,Bruno Gallas,Catherine Schwob,Thierry Pauporté,Laurent Coolen###
(169256, 169258)
 Based on this work, wefinally discuss the optical losses mechanisms and the possible strategies thatcan be implemented to improve light management within PSC devices and furtherincrease their performances.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 1, 'D', 2]

(PV)
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169376, 169379)
 Interfacial dissociation of tripletexcitons constitutes a viable mechanism for enhancing photovoltaic (PV)efficiencies in polymer heterojunction-based solar cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 1.65, 'eV', 5]

PV
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169399, 169400)
 The PV efficiencyfrom polymer solar cells utilizing a ladder-type poly (para-phenylene) polymer(PhL<missing VAR>PPP) with trace quantity of Pd atoms and a fullerene derivative (PCBM) ismuch higher than its counterpart (MeL<missing VAR>PPP) with no Pd atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 1.65, 'eV', 4]

P
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169437, 169437)
 The PV efficiencyfrom polymer solar cells utilizing a ladder-type poly (para-phenylene) polymer(PhL<missing VAR>PPP) with trace quantity of Pd atoms and a fullerene derivative (PCBM) ismuch higher than its counterpart (MeL<missing VAR>PPP) with no Pd atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 1.65, 'eV', 4]

Pd
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169448, 169448)
 The PV efficiencyfrom polymer solar cells utilizing a ladder-type poly (para-phenylene) polymer(PhL<missing VAR>PPP) with trace quantity of Pd atoms and a fullerene derivative (PCBM) ismuch higher than its counterpart (MeL<missing VAR>PPP) with no Pd atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 1.65, 'eV', 4]

PCB
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169461, 169463)
 The PV efficiencyfrom polymer solar cells utilizing a ladder-type poly (para-phenylene) polymer(PhL<missing VAR>PPP) with trace quantity of Pd atoms and a fullerene derivative (PCBM) ismuch higher than its counterpart (MeL<missing VAR>PPP) with no Pd atom.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 1.65, 'eV', 4]

P
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169485, 169485)
 The PV efficiencyfrom polymer solar cells utilizing a ladder-type poly (para-phenylene) polymer(PhL<missing VAR>PPP) with trace quantity of Pd atoms and a fullerene derivative (PCBM) ismuch higher than its counterpart (MeL<missing VAR>PPP) with no Pd atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 1.65, 'eV', 4]

Pd
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169492, 169492)
 The PV efficiencyfrom polymer solar cells utilizing a ladder-type poly (para-phenylene) polymer(PhL<missing VAR>PPP) with trace quantity of Pd atoms and a fullerene derivative (PCBM) ismuch higher than its counterpart (MeL<missing VAR>PPP) with no Pd atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1.65, 'eV', 4]

C
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169528, 169528)
 Evidence ispresented for the formation of a weak ground-state charge-transfer complex(CT<missing VAR>C) in the blended films of the polymer and PCBM<missing VAR>, using photo-inducedabsorption (PIA) spectroscopy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 1.65, 'eV', 3]

C
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169530, 169530)
 Evidence ispresented for the formation of a weak ground-state charge-transfer complex(CT<missing VAR>C) in the blended films of the polymer and PCBM<missing VAR>, using photo-inducedabsorption (PIA) spectroscopy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1.65, 'eV', 3]

PCB
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169549, 169551)
 Evidence ispresented for the formation of a weak ground-state charge-transfer complex(CT<missing VAR>C) in the blended films of the polymer and PCBM<missing VAR>, using photo-inducedabsorption (PIA) spectroscopy.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1.65, 'eV', 3]

PI
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169565, 169566)
 Evidence ispresented for the formation of a weak ground-state charge-transfer complex(CT<missing VAR>C) in the blended films of the polymer and PCBM<missing VAR>, using photo-inducedabsorption (PIA) spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 1.65, 'eV', 3]

C
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169575, 169575)
 The CT<missing VAR>C state in MeL<missing VAR>PPPPCBM<missing VAR> has a singletcharacter to it, resulting in a radiative recombination.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1.65, 'eV', 2]

C
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169577, 169577)
 The CT<missing VAR>C state in MeL<missing VAR>PPPPCBM<missing VAR> has a singletcharacter to it, resulting in a radiative recombination.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 1.65, 'eV', 2]

PPPPCB
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169585, 169590)
 The CT<missing VAR>C state in MeL<missing VAR>PPPPCBM<missing VAR> has a singletcharacter to it, resulting in a radiative recombination.
Featurization terminated normally.
0,0,0,0,0.16666666666666666,0.16666666666666666,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 1.65, 'eV', 2]

In
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169618, 169618)
 In contrast, the CT<missing VAR>Cstates in PhL<missing VAR>PPPPCBM<missing VAR> are more localized with a triplet character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1.65, 'eV', 1]

C
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169625, 169625)
 In contrast, the CT<missing VAR>Cstates in PhL<missing VAR>PPPPCBM<missing VAR> are more localized with a triplet character.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1.65, 'eV', 1]

C
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169627, 169627)
 In contrast, the CT<missing VAR>Cstates in PhL<missing VAR>PPPPCBM<missing VAR> are more localized with a triplet character.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1.65, 'eV', 1]

PPPPCB
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169636, 169641)
 In contrast, the CT<missing VAR>Cstates in PhL<missing VAR>PPPPCBM<missing VAR> are more localized with a triplet character.
Featurization terminated normally.
0,0,0,0,0.16666666666666666,0.16666666666666666,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.65, 'eV', 1]

PPPPCB
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169677, 169682)
 Anabsorption peak at 1.65 eV is observed in PhL<missing VAR>PPPPCBM<missing VAR> blend in the PIA, whichmay be converted to weakly-bound polaron-pairs, contributing to the enhancementof PV efficiency.
Featurization terminated normally.
0,0,0,0,0.16666666666666666,0.16666666666666666,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1.65, 'eV', 0]

PI
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169691, 169692)
 Anabsorption peak at 1.65 eV is observed in PhL<missing VAR>PPPPCBM<missing VAR> blend in the PIA, whichmay be converted to weakly-bound polaron-pairs, contributing to the enhancementof PV efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1.65, 'eV', 0]

PV
###The role of triplet excitons in enhancing polymer solar cell efficiency: a photo-induced absorption study|K. Yang,U. Scherf,S. Guha###
(169727, 169728)
 Anabsorption peak at 1.65 eV is observed in PhL<missing VAR>PPPPCBM<missing VAR> blend in the PIA, whichmay be converted to weakly-bound polaron-pairs, contributing to the enhancementof PV efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1.65, 'eV', 0]

P3H
###Effect of doping on performance of organic solar cells|V. A. Trukhanov,V. V. Bruevich,D. Yu. Paraschuk###
(169873, 169875)
For bulk heterojunction cells, the modeling shows that for the most studiedmaterial pair (poly-3-hexylthiophene, P3HT<missing VAR>, and phenyl-C61-butyric acid methylester, PCBM) doping decreases the short-circuit current density (J<missing VAR>SC), fillfactor (FF) and efficiency.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C61
###Effect of doping on performance of organic solar cells|V. A. Trukhanov,V. V. Bruevich,D. Yu. Paraschuk###
(169883, 169884)
For bulk heterojunction cells, the modeling shows that for the most studiedmaterial pair (poly-3-hexylthiophene, P3HT<missing VAR>, and phenyl-C61-butyric acid methylester, PCBM) doping decreases the short-circuit current density (J<missing VAR>SC), fillfactor (FF) and efficiency.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCB
###Effect of doping on performance of organic solar cells|V. A. Trukhanov,V. V. Bruevich,D. Yu. Paraschuk###
(169896, 169898)
For bulk heterojunction cells, the modeling shows that for the most studiedmaterial pair (poly-3-hexylthiophene, P3HT<missing VAR>, and phenyl-C61-butyric acid methylester, PCBM) doping decreases the short-circuit current density (J<missing VAR>SC), fillfactor (FF) and efficiency.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Effect of doping on performance of organic solar cells|V. A. Trukhanov,V. V. Bruevich,D. Yu. Paraschuk###
(169919, 169919)
For bulk heterojunction cells, the modeling shows that for the most studiedmaterial pair (poly-3-hexylthiophene, P3HT<missing VAR>, and phenyl-C61-butyric acid methylester, PCBM) doping decreases the short-circuit current density (J<missing VAR>SC), fillfactor (FF) and efficiency.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FF)
###Effect of doping on performance of organic solar cells|V. A. Trukhanov,V. V. Bruevich,D. Yu. Paraschuk###
(169928, 169931)
For bulk heterojunction cells, the modeling shows that for the most studiedmaterial pair (poly-3-hexylthiophene, P3HT<missing VAR>, and phenyl-C61-butyric acid methylester, PCBM) doping decreases the short-circuit current density (J<missing VAR>SC), fillfactor (FF) and efficiency.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Effect of doping on performance of organic solar cells|V. A. Trukhanov,V. V. Bruevich,D. Yu. Paraschuk###
(170059, 170060)
 For planarheterojunction cells, the modeling shows that if the acceptor layer is n<missing VAR> doped,and the donor layer is p<missing VAR> doped, the open-circuit voltage, J<missing VAR>SC, FF and hence theefficiency can be increased by doping.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Effect of doping on performance of organic solar cells|V. A. Trukhanov,V. V. Bruevich,D. Yu. Paraschuk###
(170063, 170064)
 For planarheterojunction cells, the modeling shows that if the acceptor layer is n<missing VAR> doped,and the donor layer is p<missing VAR> doped, the open-circuit voltage, J<missing VAR>SC, FF and hence theefficiency can be increased by doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Effect of doping on performance of organic solar cells|V. A. Trukhanov,V. V. Bruevich,D. Yu. Paraschuk###
(170116, 170117)
 Inversely, when the acceptor is p<missing VAR> doped,and the donor is n<missing VAR> doped; FF decreases rapidly with increasing dopantconcentrations so that the current-voltage curve becomes S shaped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of doping on performance of organic solar cells|V. A. Trukhanov,V. V. Bruevich,D. Yu. Paraschuk###
(170146, 170146)
 Inversely, when the acceptor is p<missing VAR> doped,and the donor is n<missing VAR> doped; FF decreases rapidly with increasing dopantconcentrations so that the current-voltage curve becomes S shaped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###A Vertical Architecture for Increasing Photogalvanic Solar Cell Efficiency: Theory and Modeling|Mohammad Ali Mahmoudzadeh,John D. W. Madden###
(170455, 170455)
 As a result, unreasonably fast electrode kinetics are no longerrequired.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 13, '%', 4]

In
###Computational design of high performance hybrid perovskite on silicon tandem solar cells|A. Rolland,L. Pedesseau,A. Beck,M. Kepenekian,C. Katan,Y. Huang,S. Wang,C. Cornet,O. Durand,J. Even###
(170705, 170705)
 In this study, the optoelectronic properties of a monolithically integratedseries-connected tandem solar cell are simulated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 20, '%', 5],[363.0, 27, '%', 7],[395.0, 17.3, '%', 7],[407.0, 17.9, '%', 7]

I3
###Computational design of high performance hybrid perovskite on silicon tandem solar cells|A. Rolland,L. Pedesseau,A. Beck,M. Kepenekian,C. Katan,Y. Huang,S. Wang,C. Cornet,O. Durand,J. Even###
(170849, 170850)
 The cell consists in amethylammonium mixed bromide-iodide lead perovskite, CH3NH3PbI3(1-x)Br3x<missing VAR> (0 < x<missing VAR>< 1), top sub-cell and a single-crystalline silicon bottom sub-cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 20, '%', 3],[218.0, 27, '%', 5],[250.0, 17.3, '%', 5],[262.0, 17.9, '%', 5]

Br3
###Computational design of high performance hybrid perovskite on silicon tandem solar cells|A. Rolland,L. Pedesseau,A. Beck,M. Kepenekian,C. Katan,Y. Huang,S. Wang,C. Cornet,O. Durand,J. Even###
(170856, 170857)
 The cell consists in amethylammonium mixed bromide-iodide lead perovskite, CH3NH3PbI3(1-x)Br3x<missing VAR> (0 < x<missing VAR>< 1), top sub-cell and a single-crystalline silicon bottom sub-cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 20, '%', 3],[211.0, 27, '%', 5],[243.0, 17.3, '%', 5],[255.0, 17.9, '%', 5]

Si
###Computational design of high performance hybrid perovskite on silicon tandem solar cells|A. Rolland,L. Pedesseau,A. Beck,M. Kepenekian,C. Katan,Y. Huang,S. Wang,C. Cornet,O. Durand,J. Even###
(170899, 170899)
 A Si-basedtunnel junction connects the two sub-cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 20, '%', 2],[169.0, 27, '%', 4],[201.0, 17.3, '%', 4],[213.0, 17.9, '%', 4]

Si
###Computational design of high performance hybrid perovskite on silicon tandem solar cells|A. Rolland,L. Pedesseau,A. Beck,M. Kepenekian,C. Katan,Y. Huang,S. Wang,C. Cornet,O. Durand,J. Even###
(171143, 171143)
 A maximum efficiency of 27% is predictedfor the tandem cell, exceeding the efficiencies of stand-alone silicon (17.3%)and perovskite cells (17.9%) taken for our simulations, and more importantly,that of the record crystalline Si cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 20, '%', 2],[75.0, 27, '%', 0],[43.0, 17.3, '%', 0],[31.0, 17.9, '%', 0]

PC
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171173, 171174)
Perovskite Twin Solar Device with Estimated 50% Bifacial PCE<missing VAR> Potential and New Solar Material Options.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 50, '%', 0],[63.0, 25, '%', 1],[160.0, 30, '%', 3],[176.0, 50, '%', 4],[220.0, 1.7, 'V', 5]

F
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171307, 171307)
 Herethe construction of a low-cost FAPbI3 twin solar cell is proposed with assumedPCE<missing VAR> of 30%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 50, '%', 3],[70.0, 25, '%', 2],[27.0, 30, '%', 0],[43.0, 50, '%', 1],[87.0, 1.7, 'V', 2]

PbI3
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171309, 171311)
 Herethe construction of a low-cost FAPbI3 twin solar cell is proposed with assumedPCE<missing VAR> of 30%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 50, '%', 3],[72.0, 25, '%', 2],[23.0, 30, '%', 0],[39.0, 50, '%', 1],[83.0, 1.7, 'V', 2]

PC
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171328, 171329)
 Herethe construction of a low-cost FAPbI3 twin solar cell is proposed with assumedPCE<missing VAR> of 30%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 50, '%', 3],[91.0, 25, '%', 2],[5.0, 30, '%', 0],[21.0, 50, '%', 1],[65.0, 1.7, 'V', 2]

TiO2
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171499, 171501)
 Further, the substitution ot TiO2 (rutile) byferroelectric and photo-catalytically active Bi2SiO5 with its comparable energygap is sugested.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 50, '%', 7],[262.0, 25, '%', 6],[165.0, 30, '%', 4],[149.0, 50, '%', 3],[105.0, 1.7, 'V', 2]

Bi2SiO5
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171520, 171524)
 Further, the substitution ot TiO2 (rutile) byferroelectric and photo-catalytically active Bi2SiO5 with its comparable energygap is sugested.
Featurization terminated normally.
0,0,0,0,0,0,0,0.625,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 50, '%', 7],[283.0, 25, '%', 6],[186.0, 30, '%', 4],[170.0, 50, '%', 3],[126.0, 1.7, 'V', 2]

CuO1-x
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171542, 171546)
 CuO1-x could serve as new back electrode material due to itshigh electric conductivity.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[374.0, 50, '%', 8],[305.0, 25, '%', 7],[208.0, 30, '%', 5],[192.0, 50, '%', 4],[148.0, 1.7, 'V', 3]

In
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171576, 171576)
 In addition, an environmentally benign(Cs,FA)2(Na,Cu,Ag)Bi(I,Br)6 elpasolite solar absorber material is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 50, '%', 9],[339.0, 25, '%', 8],[242.0, 30, '%', 6],[226.0, 50, '%', 5],[182.0, 1.7, 'V', 4]

Cs
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171589, 171589)
 In addition, an environmentally benign(Cs,FA)2(Na,Cu,Ag)Bi(I,Br)6 elpasolite solar absorber material is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[421.0, 50, '%', 9],[352.0, 25, '%', 8],[255.0, 30, '%', 6],[239.0, 50, '%', 5],[195.0, 1.7, 'V', 4]

F
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171591, 171591)
 In addition, an environmentally benign(Cs,FA)2(Na,Cu,Ag)Bi(I,Br)6 elpasolite solar absorber material is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 50, '%', 9],[354.0, 25, '%', 8],[257.0, 30, '%', 6],[241.0, 50, '%', 5],[197.0, 1.7, 'V', 4]

Na
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171596, 171596)
 In addition, an environmentally benign(Cs,FA)2(Na,Cu,Ag)Bi(I,Br)6 elpasolite solar absorber material is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 50, '%', 9],[359.0, 25, '%', 8],[262.0, 30, '%', 6],[246.0, 50, '%', 5],[202.0, 1.7, 'V', 4]

Cu
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171598, 171598)
 In addition, an environmentally benign(Cs,FA)2(Na,Cu,Ag)Bi(I,Br)6 elpasolite solar absorber material is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[430.0, 50, '%', 9],[361.0, 25, '%', 8],[264.0, 30, '%', 6],[248.0, 50, '%', 5],[204.0, 1.7, 'V', 4]

Ag
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171600, 171600)
 In addition, an environmentally benign(Cs,FA)2(Na,Cu,Ag)Bi(I,Br)6 elpasolite solar absorber material is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 50, '%', 9],[363.0, 25, '%', 8],[266.0, 30, '%', 6],[250.0, 50, '%', 5],[206.0, 1.7, 'V', 4]

Bi
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171602, 171602)
 In addition, an environmentally benign(Cs,FA)2(Na,Cu,Ag)Bi(I,Br)6 elpasolite solar absorber material is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[434.0, 50, '%', 9],[365.0, 25, '%', 8],[268.0, 30, '%', 6],[252.0, 50, '%', 5],[208.0, 1.7, 'V', 4]

I
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171604, 171604)
 In addition, an environmentally benign(Cs,FA)2(Na,Cu,Ag)Bi(I,Br)6 elpasolite solar absorber material is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 50, '%', 9],[367.0, 25, '%', 8],[270.0, 30, '%', 6],[254.0, 50, '%', 5],[210.0, 1.7, 'V', 4]

Br
###Perovskite Twin Solar Device with Estimated 50% Bifacial PCE Potential and New Solar Material Options|Hans Hermann Otto###
(171606, 171606)
 In addition, an environmentally benign(Cs,FA)2(Na,Cu,Ag)Bi(I,Br)6 elpasolite solar absorber material is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 50, '%', 9],[369.0, 25, '%', 8],[272.0, 30, '%', 6],[256.0, 50, '%', 5],[212.0, 1.7, 'V', 4]

Si
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171699, 171699)
SiNxTb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 1.2, 'W', 4],[318.0, 0.15, 'W', 4]

SiN
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171736, 171737)
 SiN x<missing VAR>  Tb 3+-Yb 3+, an efficient down-conversion layer compatible withsilicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x<missing VAR> down-conversionlayers compatible with silicon Photovoltaic Technology were prepared byreactive magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 1.2, 'W', 3],[280.0, 0.15, 'W', 3]

Tb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171742, 171742)
 SiN x<missing VAR>  Tb 3+-Yb 3+, an efficient down-conversion layer compatible withsilicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x<missing VAR> down-conversionlayers compatible with silicon Photovoltaic Technology were prepared byreactive magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 1.2, 'W', 3],[275.0, 0.15, 'W', 3]

Yb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171747, 171747)
 SiN x<missing VAR>  Tb 3+-Yb 3+, an efficient down-conversion layer compatible withsilicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x<missing VAR> down-conversionlayers compatible with silicon Photovoltaic Technology were prepared byreactive magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 1.2, 'W', 3],[270.0, 0.15, 'W', 3]

Tb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171778, 171778)
 SiN x<missing VAR>  Tb 3+-Yb 3+, an efficient down-conversion layer compatible withsilicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x<missing VAR> down-conversionlayers compatible with silicon Photovoltaic Technology were prepared byreactive magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 1.2, 'W', 3],[239.0, 0.15, 'W', 3]

Yb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171783, 171783)
 SiN x<missing VAR>  Tb 3+-Yb 3+, an efficient down-conversion layer compatible withsilicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x<missing VAR> down-conversionlayers compatible with silicon Photovoltaic Technology were prepared byreactive magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 1.2, 'W', 3],[234.0, 0.15, 'W', 3]

SiN
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171792, 171793)
 SiN x<missing VAR>  Tb 3+-Yb 3+, an efficient down-conversion layer compatible withsilicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x<missing VAR> down-conversionlayers compatible with silicon Photovoltaic Technology were prepared byreactive magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 1.2, 'W', 3],[224.0, 0.15, 'W', 3]

Tb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171836, 171836)
 Efficient sensitization of Tb 3+ ions througha SiN x<missing VAR> host matrix and cooperative energy transfer between Tb 3+ and Yb 3+ions were evidenced as driving mechanisms of the down-conversion process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1.2, 'W', 2],[181.0, 0.15, 'W', 2]

SiN
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171848, 171849)
 Efficient sensitization of Tb 3+ ions througha SiN x<missing VAR> host matrix and cooperative energy transfer between Tb 3+ and Yb 3+ions were evidenced as driving mechanisms of the down-conversion process.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1.2, 'W', 2],[168.0, 0.15, 'W', 2]

Tb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171867, 171867)
 Efficient sensitization of Tb 3+ ions througha SiN x<missing VAR> host matrix and cooperative energy transfer between Tb 3+ and Yb 3+ions were evidenced as driving mechanisms of the down-conversion process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1.2, 'W', 2],[150.0, 0.15, 'W', 2]

Yb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171874, 171874)
 Efficient sensitization of Tb 3+ ions througha SiN x<missing VAR> host matrix and cooperative energy transfer between Tb 3+ and Yb 3+ions were evidenced as driving mechanisms of the down-conversion process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1.2, 'W', 2],[143.0, 0.15, 'W', 2]

In
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171903, 171903)
 Inthis paper, the film composition and microstructure are investigated alongsidetheir optical properties, with the aim of maximizing the rare earth ionsincorporation and emission efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 1.2, 'W', 1],[114.0, 0.15, 'W', 1]

Yb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(171976, 171976)
 An optimized layer achieving the highestYb 3+ emission intensity was obtained by reactive magnetron co-sputtering in anitride rich atmosphere for 1.2 W/cm2 and 0.15 W/cm2 power densityapplied on the Tb and Yb targets, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1.2, 'W', 0],[41.0, 0.15, 'W', 0]

Tb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(172033, 172033)
 An optimized layer achieving the highestYb 3+ emission intensity was obtained by reactive magnetron co-sputtering in anitride rich atmosphere for 1.2 W/cm2 and 0.15 W/cm2 power densityapplied on the Tb and Yb targets, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1.2, 'W', 0],[16.0, 0.15, 'W', 0]

Yb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(172037, 172037)
 An optimized layer achieving the highestYb 3+ emission intensity was obtained by reactive magnetron co-sputtering in anitride rich atmosphere for 1.2 W/cm2 and 0.15 W/cm2 power densityapplied on the Tb and Yb targets, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.2, 'W', 0],[20.0, 0.15, 'W', 0]

C
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(172061, 172061)
 It was determined thatdepositing at 200 textdegreeC and annealing at 850 textdegreeC leads tocomparable Yb 3+ emission intensity than depositing at 500 textdegreeC andannealing at 600 textdegreeC, which is promising for applications towardsilicon solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1.2, 'W', 1],[44.0, 0.15, 'W', 1]

C
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(172072, 172072)
 It was determined thatdepositing at 200 textdegreeC and annealing at 850 textdegreeC leads tocomparable Yb 3+ emission intensity than depositing at 500 textdegreeC andannealing at 600 textdegreeC, which is promising for applications towardsilicon solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1.2, 'W', 1],[55.0, 0.15, 'W', 1]

Yb
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(172081, 172081)
 It was determined thatdepositing at 200 textdegreeC and annealing at 850 textdegreeC leads tocomparable Yb 3+ emission intensity than depositing at 500 textdegreeC andannealing at 600 textdegreeC, which is promising for applications towardsilicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1.2, 'W', 1],[64.0, 0.15, 'W', 1]

C
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(172099, 172099)
 It was determined thatdepositing at 200 textdegreeC and annealing at 850 textdegreeC leads tocomparable Yb 3+ emission intensity than depositing at 500 textdegreeC andannealing at 600 textdegreeC, which is promising for applications towardsilicon solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1.2, 'W', 1],[82.0, 0.15, 'W', 1]

C
###SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process|Lucile Dumont,Julien Cardin,Patrizio Benzo,Marzia Carrada,Christophe Labbe,Andrea L. Richard,David C. Ingram,Wojciech M. Jadwisienczak,Fabrice Gourbilleau###
(172111, 172111)
 It was determined thatdepositing at 200 textdegreeC and annealing at 850 textdegreeC leads tocomparable Yb 3+ emission intensity than depositing at 500 textdegreeC andannealing at 600 textdegreeC, which is promising for applications towardsilicon solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1.2, 'W', 1],[94.0, 0.15, 'W', 1]

S
###Accelerated Discovery of Efficient Solar-cell Materials using Quantum and Machine-learning Methods|Kamal Choudhary,Marnik Bercx,Jie Jiang,Ruth Pachter,Dirk Lamoen,Francesca Tavazza###
(172296, 172296)
 We calculated the spectroscopiclimited maximum efficiency (SLME) using Tran-Blaha modified Becke-Johnsonpotential for 5097 non-metallic materials and identified 1997 candidates withan SLME higher than 10%, including 934 candidates with suitable convex-hullstability and effective carrier mass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 5097, 'non', 0],[31.0, 1997, 'candidates', 0],[47.0, 10, '%', 0],[52.0, 934, 'candidates', 0],[77.0, 2, 'D', 1]

S
###Accelerated Discovery of Efficient Solar-cell Materials using Quantum and Machine-learning Methods|Kamal Choudhary,Marnik Bercx,Jie Jiang,Ruth Pachter,Dirk Lamoen,Francesca Tavazza###
(172334, 172334)
 We calculated the spectroscopiclimited maximum efficiency (SLME) using Tran-Blaha modified Becke-Johnsonpotential for 5097 non-metallic materials and identified 1997 candidates withan SLME higher than 10%, including 934 candidates with suitable convex-hullstability and effective carrier mass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5097, 'non', 0],[7.0, 1997, 'candidates', 0],[9.0, 10, '%', 0],[14.0, 934, 'candidates', 0],[39.0, 2, 'D', 1]

W0
###Accelerated Discovery of Efficient Solar-cell Materials using Quantum and Machine-learning Methods|Kamal Choudhary,Marnik Bercx,Jie Jiang,Ruth Pachter,Dirk Lamoen,Francesca Tavazza###
(172397, 172398)
 Screening for 2D-layered cases, we found58 potential materials and performed G<missing VAR>0W0 calculations on a subset to estimatethe prediction-uncertainty.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 5097, 'non', 1],[70.0, 1997, 'candidates', 1],[54.0, 10, '%', 1],[49.0, 934, 'candidates', 1],[24.0, 2, 'D', 0]

As
###Accelerated Discovery of Efficient Solar-cell Materials using Quantum and Machine-learning Methods|Kamal Choudhary,Marnik Bercx,Jie Jiang,Ruth Pachter,Dirk Lamoen,Francesca Tavazza###
(172420, 172420)
 As the above DFT methods are still computationallyexpensive, we developed a high accuracy machine learning model to pre-screenefficient materials and applied it to over a million materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 5097, 'non', 2],[93.0, 1997, 'candidates', 2],[77.0, 10, '%', 2],[72.0, 934, 'candidates', 2],[47.0, 2, 'D', 1]

V
###Accelerated Discovery of Efficient Solar-cell Materials using Quantum and Machine-learning Methods|Kamal Choudhary,Marnik Bercx,Jie Jiang,Ruth Pachter,Dirk Lamoen,Francesca Tavazza###
(172557, 172557)
gov/knc6/J<missing VAR>VASP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 5097, 'non', 7],[230.0, 1997, 'candidates', 7],[214.0, 10, '%', 7],[209.0, 934, 'candidates', 7],[184.0, 2, 'D', 6]

SP
###Accelerated Discovery of Efficient Solar-cell Materials using Quantum and Machine-learning Methods|Kamal Choudhary,Marnik Bercx,Jie Jiang,Ruth Pachter,Dirk Lamoen,Francesca Tavazza###
(172559, 172560)
gov/knc6/J<missing VAR>VASP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 5097, 'non', 7],[232.0, 1997, 'candidates', 7],[216.0, 10, '%', 7],[211.0, 934, 'candidates', 7],[186.0, 2, 'D', 6]

In0.51Ga0.49P
###Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency|Mohammad Jobayer Hossain###
(172678, 172682)
 A high photon to electricity conversion efficiency of 47.2082% was achievedby a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As andIn0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.245,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 47.2082, '%', 0],[55.0, 1.9, 'eV', 1],[57.0, 1.42, 'eV', 1],[59.0, 1.08, 'eV', 1],[62.0, 0.55, 'eV', 1],[260.0, 14.7, 'mA', 5],[263.0, 2, ',', 5],[265.0, 3.3731, 'V', 5],[268.0, 0.9553, 'respectively', 5],[280.0, 1, 'sun', 6],[355.0, 18.5, 'mA', 9],[358.0, 2, ',', 9],[368.0, 3.4104, 'and', 9],[378.0, 0.9557, ',', 9],[405.0, 44.5473, '%', 9]

GaAs
###Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency|Mohammad Jobayer Hossain###
(172685, 172686)
 A high photon to electricity conversion efficiency of 47.2082% was achievedby a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As andIn0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 47.2082, '%', 0],[51.0, 1.9, 'eV', 1],[53.0, 1.42, 'eV', 1],[55.0, 1.08, 'eV', 1],[58.0, 0.55, 'eV', 1],[256.0, 14.7, 'mA', 5],[259.0, 2, ',', 5],[261.0, 3.3731, 'V', 5],[264.0, 0.9553, 'respectively', 5],[276.0, 1, 'sun', 6],[351.0, 18.5, 'mA', 9],[354.0, 2, ',', 9],[364.0, 3.4104, 'and', 9],[374.0, 0.9557, ',', 9],[401.0, 44.5473, '%', 9]

In0.24Ga0.76As
###Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency|Mohammad Jobayer Hossain###
(172689, 172693)
 A high photon to electricity conversion efficiency of 47.2082% was achievedby a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As andIn0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 47.2082, '%', 0],[44.0, 1.9, 'eV', 1],[46.0, 1.42, 'eV', 1],[48.0, 1.08, 'eV', 1],[51.0, 0.55, 'eV', 1],[249.0, 14.7, 'mA', 5],[252.0, 2, ',', 5],[254.0, 3.3731, 'V', 5],[257.0, 0.9553, 'respectively', 5],[269.0, 1, 'sun', 6],[344.0, 18.5, 'mA', 9],[347.0, 2, ',', 9],[357.0, 3.4104, 'and', 9],[367.0, 0.9557, ',', 9],[394.0, 44.5473, '%', 9]

In0.19Ga0.81Sb
###Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency|Mohammad Jobayer Hossain###
(172698, 172702)
 A high photon to electricity conversion efficiency of 47.2082% was achievedby a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As andIn0.19Ga0.81Sb subcell layers in a quadruple junction solar cell design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.405,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.095,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 47.2082, '%', 0],[35.0, 1.9, 'eV', 1],[37.0, 1.42, 'eV', 1],[39.0, 1.08, 'eV', 1],[42.0, 0.55, 'eV', 1],[240.0, 14.7, 'mA', 5],[243.0, 2, ',', 5],[245.0, 3.3731, 'V', 5],[248.0, 0.9553, 'respectively', 5],[260.0, 1, 'sun', 6],[335.0, 18.5, 'mA', 9],[338.0, 2, ',', 9],[348.0, 3.4104, 'and', 9],[358.0, 0.9557, ',', 9],[385.0, 44.5473, '%', 9]

III
###Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency|Mohammad Jobayer Hossain###
(172754, 172756)
 This novel III-V arrangement enables the cell to absorb photonsfrom the ultraviolet to deep infrared wavelengths of the solar spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 47.2082, '%', 2],[17.0, 1.9, 'eV', 1],[15.0, 1.42, 'eV', 1],[13.0, 1.08, 'eV', 1],[10.0, 0.55, 'eV', 1],[186.0, 14.7, 'mA', 3],[189.0, 2, ',', 3],[191.0, 3.3731, 'V', 3],[194.0, 0.9553, 'respectively', 3],[206.0, 1, 'sun', 4],[281.0, 18.5, 'mA', 7],[284.0, 2, ',', 7],[294.0, 3.4104, 'and', 7],[304.0, 0.9557, ',', 7],[331.0, 44.5473, '%', 7]

V
###Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency|Mohammad Jobayer Hossain###
(172758, 172758)
 This novel III-V arrangement enables the cell to absorb photonsfrom the ultraviolet to deep infrared wavelengths of the solar spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 47.2082, '%', 2],[21.0, 1.9, 'eV', 1],[19.0, 1.42, 'eV', 1],[17.0, 1.08, 'eV', 1],[14.0, 0.55, 'eV', 1],[184.0, 14.7, 'mA', 3],[187.0, 2, ',', 3],[189.0, 3.3731, 'V', 3],[192.0, 0.9553, 'respectively', 3],[204.0, 1, 'sun', 4],[279.0, 18.5, 'mA', 7],[282.0, 2, ',', 7],[292.0, 3.4104, 'and', 7],[302.0, 0.9557, ',', 7],[329.0, 44.5473, '%', 7]

In
###Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Optimized Quantum Efficiency|Mohammad Jobayer Hossain###
(172953, 172953)
 In the designprocess, 1 sun AM<missing VAR>1.5 global solar spectrum was considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 47.2082, '%', 6],[216.0, 1.9, 'eV', 5],[214.0, 1.42, 'eV', 5],[212.0, 1.08, 'eV', 5],[209.0, 0.55, 'eV', 5],[11.0, 14.7, 'mA', 1],[8.0, 2, ',', 1],[6.0, 3.3731, 'V', 1],[3.0, 0.9553, 'respectively', 1],[9.0, 1, 'sun', 0],[84.0, 18.5, 'mA', 3],[87.0, 2, ',', 3],[97.0, 3.4104, 'and', 3],[107.0, 0.9557, ',', 3],[134.0, 44.5473, '%', 3]

TiO2
###Strongly enhanced upconversion in trivalent erbium ions by tailored gold nanostructures: toward high-efficient silicon-based photovoltaics|Jeppe Christiansen,Joakim Vester-Petersen,Søren Roesgaard,Søren H. Møller,Rasmus E. Christiansen,Ole Sigmund,Søren P. Madsen,Peter Balling,Brian Julsgaard###
(173266, 173268)
 We employ tailored gold nanostructures to vastlyimprove the upconversion efficiency in erbium-doped TiO2 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1500, 'to', 1],[77.0, 980, 'nm', 1],[86.0, 1500, 'nm', 2],[153.0, 1.7, 'Wcm', 3]

In
###Strongly enhanced upconversion in trivalent erbium ions by tailored gold nanostructures: toward high-efficient silicon-based photovoltaics|Jeppe Christiansen,Joakim Vester-Petersen,Søren Roesgaard,Søren H. Møller,Rasmus E. Christiansen,Ole Sigmund,Søren P. Madsen,Peter Balling,Brian Julsgaard###
(173310, 173310)
 In qualitative agreement with atheoretical model, the samples show substantial electric-field enhancementsinside the upconverting films for excitation at 1500 nm for both s<missing VAR>- andp<missing VAR>-polarization under a wide range of incidence angles and excitationintensities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 1500, 'to', 3],[121.0, 980, 'nm', 3],[44.0, 1500, 'nm', 0],[111.0, 1.7, 'Wcm', 1]

P
###Next Generation Quantum Dots Based Multijunction Photovoltaics|Ankul Prajapati,Bade M H###
(173541, 173541)
 Photovoltaic cells (PVc), as an energy provider to the next generation andthe biggest source of renewable energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Next Generation Quantum Dots Based Multijunction Photovoltaics|Ankul Prajapati,Bade M H###
(173601, 173601)
 Since the last decade improvingefficiency and reducing the cost of PVc has been a subject of active researchamong scientists.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Next Generation Quantum Dots Based Multijunction Photovoltaics|Ankul Prajapati,Bade M H###
(173877, 173877)
 To utilize the maximum part of the spectrum ofsolar energy reaching to the earth and making effective energy production, herewe introduce the complete cell architecture and numerical investigation onquantum dot based solar cells (QDSCs) with a heterostructure multijunctionapproach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Next Generation Quantum Dots Based Multijunction Photovoltaics|Ankul Prajapati,Bade M H###
(173941, 173942)
 We majorly focused on improving the electrical andoptical properties of the QDSCs achieved by different materials and structuralapproaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Next Generation Quantum Dots Based Multijunction Photovoltaics|Ankul Prajapati,Bade M H###
(173971, 173972)
 Here, we report a heterostructure II-Type of band alignmentengineering strategy for QDSCs interfaces that significantly enhances theefficiency descriptors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Next Generation Quantum Dots Based Multijunction Photovoltaics|Ankul Prajapati,Bade M H###
(173991, 173992)
 Here, we report a heterostructure II-Type of band alignmentengineering strategy for QDSCs interfaces that significantly enhances theefficiency descriptors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Next Generation Quantum Dots Based Multijunction Photovoltaics|Ankul Prajapati,Bade M H###
(174010, 174010)
 In the context of intermediate band solar cell (IBSC),we investigated optical properties of Q<missing VAR>Ds and strain effects on multilayer PVcand we summarize the strain effect in Q<missing VAR>Ds growth and local energy band bendingof conduction band (CB) and valence band (VB).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(IBSC)
###Next Generation Quantum Dots Based Multijunction Photovoltaics|Ankul Prajapati,Bade M H###
(174026, 174031)
 In the context of intermediate band solar cell (IBSC),we investigated optical properties of Q<missing VAR>Ds and strain effects on multilayer PVcand we summarize the strain effect in Q<missing VAR>Ds growth and local energy band bendingof conduction band (CB) and valence band (VB).
Featurization successful!
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Next Generation Quantum Dots Based Multijunction Photovoltaics|Ankul Prajapati,Bade M H###
(174046, 174046)
 In the context of intermediate band solar cell (IBSC),we investigated optical properties of Q<missing VAR>Ds and strain effects on multilayer PVcand we summarize the strain effect in Q<missing VAR>Ds growth and local energy band bendingof conduction band (CB) and valence band (VB).
EXCEPTION 3: IndexError for Ds
P
Abstract does not contain any numbers.

MoS2
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174245, 174247)
 Here we report an open-circuit voltage of 1.02 Vin a 120 nm-thick vertically stacked homojunction fabricated withsubstitutionally doped MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.6, 'V', 1],[25.0, 1.02, 'V', 0],[19.0, 120, 'nm', 0]

MoS2
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174277, 174279)
 This high open-circuit voltage is consistent withthe band alignment in the MoS2 homojunction, which is more favourable than inwidely-used TMDC heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.6, 'V', 2],[57.0, 1.02, 'V', 1],[51.0, 120, 'nm', 1]

C
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174304, 174304)
 This high open-circuit voltage is consistent withthe band alignment in the MoS2 homojunction, which is more favourable than inwidely-used TMDC heterostructures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.6, 'V', 2],[84.0, 1.02, 'V', 1],[78.0, 120, 'nm', 1]

MoS2
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174334, 174336)
 It is also attributed to the highperformance of the substitutionally doped MoS2, in particular the p<missing VAR>-typematerial doped with Nb, which is demonstrated by the observation ofelectroluminescence from tunnelling graphene/BN/MoS2 structures in spite of theindirect nature of bulk MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 0.6, 'V', 3],[114.0, 1.02, 'V', 2],[108.0, 120, 'nm', 2]

Nb
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174356, 174356)
 It is also attributed to the highperformance of the substitutionally doped MoS2, in particular the p<missing VAR>-typematerial doped with Nb, which is demonstrated by the observation ofelectroluminescence from tunnelling graphene/BN/MoS2 structures in spite of theindirect nature of bulk MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.6, 'V', 3],[136.0, 1.02, 'V', 2],[130.0, 120, 'nm', 2]

BN/MoS2
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174382, 174387)
 It is also attributed to the highperformance of the substitutionally doped MoS2, in particular the p<missing VAR>-typematerial doped with Nb, which is demonstrated by the observation ofelectroluminescence from tunnelling graphene/BN/MoS2 structures in spite of theindirect nature of bulk MoS2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[180.0, 0.6, 'V', 3],[162.0, 1.02, 'V', 2],[156.0, 120, 'nm', 2]

MoS2
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174408, 174410)
 It is also attributed to the highperformance of the substitutionally doped MoS2, in particular the p<missing VAR>-typematerial doped with Nb, which is demonstrated by the observation ofelectroluminescence from tunnelling graphene/BN/MoS2 structures in spite of theindirect nature of bulk MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 0.6, 'V', 3],[188.0, 1.02, 'V', 2],[182.0, 120, 'nm', 2]

C
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174426, 174426)
 We find that illuminating the TMDC/metal contactsdecreases the measured open-circuit voltage in MoS2 van der Waals homojunctionsbecause they are photoactive, which points to the need of developinglow-resistance, ohmic contacts to doped MoS2 in order to achieve highefficiency in practical devices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 0.6, 'V', 4],[206.0, 1.02, 'V', 3],[200.0, 120, 'nm', 3]

MoS2
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174447, 174449)
 We find that illuminating the TMDC/metal contactsdecreases the measured open-circuit voltage in MoS2 van der Waals homojunctionsbecause they are photoactive, which points to the need of developinglow-resistance, ohmic contacts to doped MoS2 in order to achieve highefficiency in practical devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 0.6, 'V', 4],[227.0, 1.02, 'V', 3],[221.0, 120, 'nm', 3]

MoS2
###High open-circuit voltage in transition metal dichalcogenide solar cells|Simon A. Svatek,C. Bueno,Der-Yuh Lin,James Kerfoot,Carlos Macías,Marius H. Zehender,Ignacio Tobías,Pablo García-Linares,Takashi Taniguchi,Kenji Watanabe,Peter Beton,Elisa Antolín###
(174497, 174499)
 We find that illuminating the TMDC/metal contactsdecreases the measured open-circuit voltage in MoS2 van der Waals homojunctionsbecause they are photoactive, which points to the need of developinglow-resistance, ohmic contacts to doped MoS2 in order to achieve highefficiency in practical devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 0.6, 'V', 4],[277.0, 1.02, 'V', 3],[271.0, 120, 'nm', 3]

In
###A DFT computational design and exploration of novel direct band gap silver-thallium double perovskites|Syed Zuhair Abbas Shah,Shanawer Niaz,Tabassum Nasir,James Sifuna###
(175270, 175270)
 In this scenario, the innovative materials forphotovoltaic and thermoelectric device applications are required by addressingcurrent issues of instability and efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 25.2, '%', 1]

In
###A DFT computational design and exploration of novel direct band gap silver-thallium double perovskites|Syed Zuhair Abbas Shah,Shanawer Niaz,Tabassum Nasir,James Sifuna###
(175364, 175364)
 In the current article, we investigated innovativesmall direct band gap double perovskites (elapsolite) Cs2AgTlX<missing VAR>6 (X<missing VAR> Cl,Br) with a comprehensive discussion on structural, electronic, optical, andthermoelectric properties using a first-principles approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 25.2, '%', 1]

Cs2AgTl
###A DFT computational design and exploration of novel direct band gap silver-thallium double perovskites|Syed Zuhair Abbas Shah,Shanawer Niaz,Tabassum Nasir,James Sifuna###
(175396, 175399)
 In the current article, we investigated innovativesmall direct band gap double perovskites (elapsolite) Cs2AgTlX<missing VAR>6 (X<missing VAR> Cl,Br) with a comprehensive discussion on structural, electronic, optical, andthermoelectric properties using a first-principles approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 25.2, '%', 1]

Cl
###A DFT computational design and exploration of novel direct band gap silver-thallium double perovskites|Syed Zuhair Abbas Shah,Shanawer Niaz,Tabassum Nasir,James Sifuna###
(175406, 175406)
 In the current article, we investigated innovativesmall direct band gap double perovskites (elapsolite) Cs2AgTlX<missing VAR>6 (X<missing VAR> Cl,Br) with a comprehensive discussion on structural, electronic, optical, andthermoelectric properties using a first-principles approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 25.2, '%', 1]

Br
###A DFT computational design and exploration of novel direct band gap silver-thallium double perovskites|Syed Zuhair Abbas Shah,Shanawer Niaz,Tabassum Nasir,James Sifuna###
(175410, 175410)
 In the current article, we investigated innovativesmall direct band gap double perovskites (elapsolite) Cs2AgTlX<missing VAR>6 (X<missing VAR> Cl,Br) with a comprehensive discussion on structural, electronic, optical, andthermoelectric properties using a first-principles approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 25.2, '%', 1]

PP
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175645, 175646)
Nature of excitons in PPDT2FBT<missing VAR> PCBM<missing VAR> solar cell Role played by PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, ',', 3],[186.0, 5, ',', 3],[191.0, -4, ',', 3],[210.0, 1, ',', 3],[212.0, 2, ',', 3],[235.0, 6, ',', 3],[394.0, 63, '%', 5],[403.0, 1, '%', 5],[425.0, 20, '%', 6],[462.0, 50, '%', 7]

FB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175650, 175651)
Nature of excitons in PPDT2FBT<missing VAR> PCBM<missing VAR> solar cell Role played by PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2, ',', 3],[181.0, 5, ',', 3],[186.0, -4, ',', 3],[205.0, 1, ',', 3],[207.0, 2, ',', 3],[230.0, 6, ',', 3],[389.0, 63, '%', 5],[398.0, 1, '%', 5],[420.0, 20, '%', 6],[457.0, 50, '%', 7]

PCB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175654, 175656)
Nature of excitons in PPDT2FBT<missing VAR> PCBM<missing VAR> solar cell Role played by PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2, ',', 3],[176.0, 5, ',', 3],[181.0, -4, ',', 3],[200.0, 1, ',', 3],[202.0, 2, ',', 3],[225.0, 6, ',', 3],[384.0, 63, '%', 5],[393.0, 1, '%', 5],[415.0, 20, '%', 6],[452.0, 50, '%', 7]

PCB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175669, 175671)
Nature of excitons in PPDT2FBT<missing VAR> PCBM<missing VAR> solar cell Role played by PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, ',', 3],[161.0, 5, ',', 3],[166.0, -4, ',', 3],[185.0, 1, ',', 3],[187.0, 2, ',', 3],[210.0, 6, ',', 3],[369.0, 63, '%', 5],[378.0, 1, '%', 5],[400.0, 20, '%', 6],[437.0, 50, '%', 7]

In
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175675, 175675)
 In organic semiconductor based bulk heterojunction solar cells, the presenceof acceptor increases the formation of charge transfer (CT) excitons, therebyleading to higher exciton dissociation probabilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, ',', 2],[157.0, 5, ',', 2],[162.0, -4, ',', 2],[181.0, 1, ',', 2],[183.0, 2, ',', 2],[206.0, 6, ',', 2],[365.0, 63, '%', 4],[374.0, 1, '%', 4],[396.0, 20, '%', 5],[433.0, 50, '%', 6]

C
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175714, 175714)
 In organic semiconductor based bulk heterojunction solar cells, the presenceof acceptor increases the formation of charge transfer (CT) excitons, therebyleading to higher exciton dissociation probabilities.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2, ',', 2],[118.0, 5, ',', 2],[123.0, -4, ',', 2],[142.0, 1, ',', 2],[144.0, 2, ',', 2],[167.0, 6, ',', 2],[326.0, 63, '%', 4],[335.0, 1, '%', 4],[357.0, 20, '%', 5],[394.0, 50, '%', 6]

In
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175737, 175737)
 In this work we usedsteady state E<missing VAR>A measurements to probe the change in the nature of excitons asthe blend composition of the solar cell active layer material is varied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, ',', 1],[95.0, 5, ',', 1],[100.0, -4, ',', 1],[119.0, 1, ',', 1],[121.0, 2, ',', 1],[144.0, 6, ',', 1],[303.0, 63, '%', 3],[312.0, 1, '%', 3],[334.0, 20, '%', 4],[371.0, 50, '%', 5]

PP
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175868, 175869)
 Weinvestigated blends ofpoly[(2,5-bis(2-hexyldecyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]thiadiazole)](PPDT2FBT) and (6,6)-Phenyl C71 butyric acid methyl ester (PCBM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, ',', 0],[36.0, 5, ',', 0],[31.0, -4, ',', 0],[12.0, 1, ',', 0],[10.0, 2, ',', 0],[12.0, 6, ',', 0],[171.0, 63, '%', 2],[180.0, 1, '%', 2],[202.0, 20, '%', 3],[239.0, 50, '%', 4]

FB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175873, 175874)
 Weinvestigated blends ofpoly[(2,5-bis(2-hexyldecyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]thiadiazole)](PPDT2FBT) and (6,6)-Phenyl C71 butyric acid methyl ester (PCBM).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, ',', 0],[41.0, 5, ',', 0],[36.0, -4, ',', 0],[17.0, 1, ',', 0],[15.0, 2, ',', 0],[7.0, 6, ',', 0],[166.0, 63, '%', 2],[175.0, 1, '%', 2],[197.0, 20, '%', 3],[234.0, 50, '%', 4]

C71
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175888, 175889)
 Weinvestigated blends ofpoly[(2,5-bis(2-hexyldecyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]thiadiazole)](PPDT2FBT) and (6,6)-Phenyl C71 butyric acid methyl ester (PCBM).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, ',', 0],[56.0, 5, ',', 0],[51.0, -4, ',', 0],[32.0, 1, ',', 0],[30.0, 2, ',', 0],[7.0, 6, ',', 0],[151.0, 63, '%', 2],[160.0, 1, '%', 2],[182.0, 20, '%', 3],[219.0, 50, '%', 4]

PCB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175900, 175902)
 Weinvestigated blends ofpoly[(2,5-bis(2-hexyldecyloxy)phenylene)-alt-(5,6-difluoro-4,7-di(thiophen-2-yl)benzo[c]-[1,2,5]thiadiazole)](PPDT2FBT) and (6,6)-Phenyl C71 butyric acid methyl ester (PCBM).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, ',', 0],[68.0, 5, ',', 0],[63.0, -4, ',', 0],[44.0, 1, ',', 0],[42.0, 2, ',', 0],[19.0, 6, ',', 0],[138.0, 63, '%', 2],[147.0, 1, '%', 2],[169.0, 20, '%', 3],[206.0, 50, '%', 4]

PCB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175938, 175940)
 Analysis ofthe E<missing VAR>A spectra showed that in presence of fullerene based acceptor, like PCBM<missing VAR>,CT<missing VAR> characteristics of the excitons were modified, though, no new CT<missing VAR> signaturewas observed in the blend.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, ',', 1],[106.0, 5, ',', 1],[101.0, -4, ',', 1],[82.0, 1, ',', 1],[80.0, 2, ',', 1],[57.0, 6, ',', 1],[100.0, 63, '%', 1],[109.0, 1, '%', 1],[131.0, 20, '%', 2],[168.0, 50, '%', 3]

C
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175945, 175945)
 Analysis ofthe E<missing VAR>A spectra showed that in presence of fullerene based acceptor, like PCBM<missing VAR>,CT<missing VAR> characteristics of the excitons were modified, though, no new CT<missing VAR> signaturewas observed in the blend.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2, ',', 1],[113.0, 5, ',', 1],[108.0, -4, ',', 1],[89.0, 1, ',', 1],[87.0, 2, ',', 1],[64.0, 6, ',', 1],[95.0, 63, '%', 1],[104.0, 1, '%', 1],[126.0, 20, '%', 2],[163.0, 50, '%', 3]

C
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175968, 175968)
 Analysis ofthe E<missing VAR>A spectra showed that in presence of fullerene based acceptor, like PCBM<missing VAR>,CT<missing VAR> characteristics of the excitons were modified, though, no new CT<missing VAR> signaturewas observed in the blend.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2, ',', 1],[136.0, 5, ',', 1],[131.0, -4, ',', 1],[112.0, 1, ',', 1],[110.0, 2, ',', 1],[87.0, 6, ',', 1],[72.0, 63, '%', 1],[81.0, 1, '%', 1],[103.0, 20, '%', 2],[140.0, 50, '%', 3]

C
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(175991, 175991)
 Enhancement in the CT<missing VAR> characteristic in the blendwas reflected in the photoluminescence (PL) measurements of the blends, where,PL<missing VAR> quenching of sim 63% was observed for 1% PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, ',', 2],[159.0, 5, ',', 2],[154.0, -4, ',', 2],[135.0, 1, ',', 2],[133.0, 2, ',', 2],[110.0, 6, ',', 2],[49.0, 63, '%', 0],[58.0, 1, '%', 0],[80.0, 20, '%', 1],[117.0, 50, '%', 2]

P
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(176014, 176014)
 Enhancement in the CT<missing VAR> characteristic in the blendwas reflected in the photoluminescence (PL) measurements of the blends, where,PL<missing VAR> quenching of sim 63% was observed for 1% PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 2, ',', 2],[182.0, 5, ',', 2],[177.0, -4, ',', 2],[158.0, 1, ',', 2],[156.0, 2, ',', 2],[133.0, 6, ',', 2],[26.0, 63, '%', 0],[35.0, 1, '%', 0],[57.0, 20, '%', 1],[94.0, 50, '%', 2]

P
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(176031, 176031)
 Enhancement in the CT<missing VAR> characteristic in the blendwas reflected in the photoluminescence (PL) measurements of the blends, where,PL<missing VAR> quenching of sim 63% was observed for 1% PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 2, ',', 2],[199.0, 5, ',', 2],[194.0, -4, ',', 2],[175.0, 1, ',', 2],[173.0, 2, ',', 2],[150.0, 6, ',', 2],[9.0, 63, '%', 0],[18.0, 1, '%', 0],[40.0, 20, '%', 1],[77.0, 50, '%', 2]

PCB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(176052, 176054)
 Enhancement in the CT<missing VAR> characteristic in the blendwas reflected in the photoluminescence (PL) measurements of the blends, where,PL<missing VAR> quenching of sim 63% was observed for 1% PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2, ',', 2],[220.0, 5, ',', 2],[215.0, -4, ',', 2],[196.0, 1, ',', 2],[194.0, 2, ',', 2],[171.0, 6, ',', 2],[12.0, 63, '%', 0],[3.0, 1, '%', 0],[17.0, 20, '%', 1],[54.0, 50, '%', 2]

PCB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(176074, 176076)
 The quenching reachessaturation at about 20% PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 2, ',', 3],[242.0, 5, ',', 3],[237.0, -4, ',', 3],[218.0, 1, ',', 3],[216.0, 2, ',', 3],[193.0, 6, ',', 3],[34.0, 63, '%', 1],[25.0, 1, '%', 1],[3.0, 20, '%', 0],[32.0, 50, '%', 1]

PCB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(176111, 176113)
 However, the maximum efficiency of the deviceswas obtained for the blend having 50% PCBM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 2, ',', 4],[279.0, 5, ',', 4],[274.0, -4, ',', 4],[255.0, 1, ',', 4],[253.0, 2, ',', 4],[230.0, 6, ',', 4],[71.0, 63, '%', 2],[62.0, 1, '%', 2],[40.0, 20, '%', 1],[3.0, 50, '%', 0]

PCB
###Nature of excitons in PPDT2FBT: PCBM solar cell: Role played by PCBM|Subhamoy Sahoo,Dhruvajyoti Barah,Dinesh Kumar S,Nithin Xavier,Soumya Dutta,Debdutta Ray,Jayeeta Bhattacharyya###
(176143, 176145)
 Comparing experimental resultswith simulations, the variation of the device efficiency with PCBM<missing VAR> percentagewas shown to be arising from multiple factors like increase in polarizabilityand dipole moment of excitons, and the efficiency of the carrier collectionfrom the bulk of the active layer.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 2, ',', 5],[311.0, 5, ',', 5],[306.0, -4, ',', 5],[287.0, 1, ',', 5],[285.0, 2, ',', 5],[262.0, 6, ',', 5],[103.0, 63, '%', 3],[94.0, 1, '%', 3],[72.0, 20, '%', 2],[35.0, 50, '%', 1]

Pd
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176230, 176230)
Two-Dimensional -PdX<missing VAR>2 (X<missing VAR>  S, Te) Monolayers for Efficient Solar Energy Conversion Applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 2],[418.0, 23, '%', 6],[435.0, 21, '%', 6],[453.0, 18, '%', 6]

S
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176238, 176238)
Two-Dimensional -PdX<missing VAR>2 (X<missing VAR>  S, Te) Monolayers for Efficient Solar Energy Conversion Applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'D', 2],[410.0, 23, '%', 6],[427.0, 21, '%', 6],[445.0, 18, '%', 6]

Te
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176241, 176241)
Two-Dimensional -PdX<missing VAR>2 (X<missing VAR>  S, Te) Monolayers for Efficient Solar Energy Conversion Applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'D', 2],[407.0, 23, '%', 6],[424.0, 21, '%', 6],[442.0, 18, '%', 6]

Pd
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176335, 176335)
 Based on first principles calculations, we showthat novel 2D beta-PdX<missing VAR>2 (X<missing VAR>  S, Te) monolayer possesses excellentstabilities and great potentials in solar energy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'D', 0],[313.0, 23, '%', 4],[330.0, 21, '%', 4],[348.0, 18, '%', 4]

S
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176343, 176343)
 Based on first principles calculations, we showthat novel 2D beta-PdX<missing VAR>2 (X<missing VAR>  S, Te) monolayer possesses excellentstabilities and great potentials in solar energy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'D', 0],[305.0, 23, '%', 4],[322.0, 21, '%', 4],[340.0, 18, '%', 4]

Te
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176346, 176346)
 Based on first principles calculations, we showthat novel 2D beta-PdX<missing VAR>2 (X<missing VAR>  S, Te) monolayer possesses excellentstabilities and great potentials in solar energy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 0],[302.0, 23, '%', 4],[319.0, 21, '%', 4],[337.0, 18, '%', 4]

Pd
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176388, 176388)
Comprehensive studies show that the beta-PdX<missing VAR>2 monolayer exhibitssemiconductor characteristics with an indirect gap, suitable band alignment,efficient carrier separation, and high solar to hydrogen (ST<missing VAR>H) efficiencies,supporting its good photoelectronic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, 'D', 1],[260.0, 23, '%', 3],[277.0, 21, '%', 3],[295.0, 18, '%', 3]

S
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176436, 176436)
Comprehensive studies show that the beta-PdX<missing VAR>2 monolayer exhibitssemiconductor characteristics with an indirect gap, suitable band alignment,efficient carrier separation, and high solar to hydrogen (ST<missing VAR>H) efficiencies,supporting its good photoelectronic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, 'D', 1],[212.0, 23, '%', 3],[229.0, 21, '%', 3],[247.0, 18, '%', 3]

H
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176438, 176438)
Comprehensive studies show that the beta-PdX<missing VAR>2 monolayer exhibitssemiconductor characteristics with an indirect gap, suitable band alignment,efficient carrier separation, and high solar to hydrogen (ST<missing VAR>H) efficiencies,supporting its good photoelectronic performance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2, 'D', 1],[210.0, 23, '%', 3],[227.0, 21, '%', 3],[245.0, 18, '%', 3]

Pd
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176534, 176534)
 The surface catalytic andadsorption/intercalation energies calculation reveals that the photogeneratedholes have adequate driving forces to render hydrogen reduction half-reactionsto proceed spontaneously and the ability to cover and incorporate watermolecules on beta-PdX<missing VAR>2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, 'D', 2],[114.0, 23, '%', 2],[131.0, 21, '%', 2],[149.0, 18, '%', 2]

Pd
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176548, 176548)
 Besides, the beta-PdX<missing VAR>2 monolayeris promising donor material for excitonic solar cells with high photovoltaicperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 2, 'D', 3],[100.0, 23, '%', 1],[117.0, 21, '%', 1],[135.0, 18, '%', 1]

II
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176617, 176618)
 More importantly, due to suitable donor band gap and smallconduction band offset in the proposed type-II heterostructure, the calculatedpower conversion efficiencies (PCE) is calculated up to 23%(beta-PdX<missing VAR>2/WTe2), 21% (beta-PdX<missing VAR>2/ MoTe2) and 18%(beta-PdTe2/beta-PdX<missing VAR>2), making it a promising candidate for solarenergy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 2, 'D', 4],[30.0, 23, '%', 0],[47.0, 21, '%', 0],[65.0, 18, '%', 0]

PC
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176635, 176636)
 More importantly, due to suitable donor band gap and smallconduction band offset in the proposed type-II heterostructure, the calculatedpower conversion efficiencies (PCE) is calculated up to 23%(beta-PdX<missing VAR>2/WTe2), 21% (beta-PdX<missing VAR>2/ MoTe2) and 18%(beta-PdTe2/beta-PdX<missing VAR>2), making it a promising candidate for solarenergy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 2, 'D', 4],[12.0, 23, '%', 0],[29.0, 21, '%', 0],[47.0, 18, '%', 0]

Pd
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176655, 176655)
 More importantly, due to suitable donor band gap and smallconduction band offset in the proposed type-II heterostructure, the calculatedpower conversion efficiencies (PCE) is calculated up to 23%(beta-PdX<missing VAR>2/WTe2), 21% (beta-PdX<missing VAR>2/ MoTe2) and 18%(beta-PdTe2/beta-PdX<missing VAR>2), making it a promising candidate for solarenergy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 2, 'D', 4],[7.0, 23, '%', 0],[10.0, 21, '%', 0],[28.0, 18, '%', 0]

Te2
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176660, 176661)
 More importantly, due to suitable donor band gap and smallconduction band offset in the proposed type-II heterostructure, the calculatedpower conversion efficiencies (PCE) is calculated up to 23%(beta-PdX<missing VAR>2/WTe2), 21% (beta-PdX<missing VAR>2/ MoTe2) and 18%(beta-PdTe2/beta-PdX<missing VAR>2), making it a promising candidate for solarenergy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 2, 'D', 4],[12.0, 23, '%', 0],[4.0, 21, '%', 0],[22.0, 18, '%', 0]

Pd
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176671, 176671)
 More importantly, due to suitable donor band gap and smallconduction band offset in the proposed type-II heterostructure, the calculatedpower conversion efficiencies (PCE) is calculated up to 23%(beta-PdX<missing VAR>2/WTe2), 21% (beta-PdX<missing VAR>2/ MoTe2) and 18%(beta-PdTe2/beta-PdX<missing VAR>2), making it a promising candidate for solarenergy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 2, 'D', 4],[23.0, 23, '%', 0],[6.0, 21, '%', 0],[12.0, 18, '%', 0]

Te2
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176677, 176678)
 More importantly, due to suitable donor band gap and smallconduction band offset in the proposed type-II heterostructure, the calculatedpower conversion efficiencies (PCE) is calculated up to 23%(beta-PdX<missing VAR>2/WTe2), 21% (beta-PdX<missing VAR>2/ MoTe2) and 18%(beta-PdTe2/beta-PdX<missing VAR>2), making it a promising candidate for solarenergy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 2, 'D', 4],[29.0, 23, '%', 0],[12.0, 21, '%', 0],[5.0, 18, '%', 0]

PdTe2
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176690, 176692)
 More importantly, due to suitable donor band gap and smallconduction band offset in the proposed type-II heterostructure, the calculatedpower conversion efficiencies (PCE) is calculated up to 23%(beta-PdX<missing VAR>2/WTe2), 21% (beta-PdX<missing VAR>2/ MoTe2) and 18%(beta-PdTe2/beta-PdX<missing VAR>2), making it a promising candidate for solarenergy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 2, 'D', 4],[42.0, 23, '%', 0],[25.0, 21, '%', 0],[7.0, 18, '%', 0]

Pd
###Two-Dimensional $β$-PdX$_2$ (X = S, Te) Monolayers for Efficient Solar Energy Conversion Applications|Mukesh Jakhar,Ashok Kumar###
(176696, 176696)
 More importantly, due to suitable donor band gap and smallconduction band offset in the proposed type-II heterostructure, the calculatedpower conversion efficiencies (PCE) is calculated up to 23%(beta-PdX<missing VAR>2/WTe2), 21% (beta-PdX<missing VAR>2/ MoTe2) and 18%(beta-PdTe2/beta-PdX<missing VAR>2), making it a promising candidate for solarenergy conversion applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 2, 'D', 4],[48.0, 23, '%', 0],[31.0, 21, '%', 0],[13.0, 18, '%', 0]

P3H
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(176754, 176756)
Dynamics of the sub-ambient gelation and shearing of solutions of P3HT<missing VAR> incorporated with a non-fullerene acceptor o<missing VAR>-IDTBR<missing VAR> towards active layer formation in bulk heterojunction organic solar cells.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 6, ',', 5]

I
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(176773, 176773)
Dynamics of the sub-ambient gelation and shearing of solutions of P3HT<missing VAR> incorporated with a non-fullerene acceptor o<missing VAR>-IDTBR<missing VAR> towards active layer formation in bulk heterojunction organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 6, ',', 5]

B
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(176776, 176776)
Dynamics of the sub-ambient gelation and shearing of solutions of P3HT<missing VAR> incorporated with a non-fullerene acceptor o<missing VAR>-IDTBR<missing VAR> towards active layer formation in bulk heterojunction organic solar cells.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 6, ',', 5]

(OSCs)
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(176806, 176810)
 Organic solar cells (OSCs) containing an active layer consisting of ananostructured blend of a conjugated polymer like poly(3-hexylthiophene) (P3HT)and an electron acceptor molecule have the potential of competing againstsilicon-based photovoltaic panels.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 6, ',', 4]

P3H
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(176849, 176851)
 Organic solar cells (OSCs) containing an active layer consisting of ananostructured blend of a conjugated polymer like poly(3-hexylthiophene) (P3HT)and an electron acceptor molecule have the potential of competing againstsilicon-based photovoltaic panels.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 6, ',', 4]

He
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(176953, 176953)
 Recently, He et al.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 6, ',', 1]

P3H
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(176973, 176975)
, have reported that the gelation of P3HT<missing VAR> with[6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) under sub-ambientconditions can provide a continuous extrusion/coating based route to theprocessing of organic solar cells and that increases in power conversionefficiencies (PCEs) of the P3HT<missing VAR>/PC60BM<missing VAR> active layer are possible under certainshearing and thermal histories of the P3HT<missing VAR>/PC60BM<missing VAR> gels.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 6, ',', 0]

C61
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(176989, 176990)
, have reported that the gelation of P3HT<missing VAR> with[6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) under sub-ambientconditions can provide a continuous extrusion/coating based route to theprocessing of organic solar cells and that increases in power conversionefficiencies (PCEs) of the P3HT<missing VAR>/PC60BM<missing VAR> active layer are possible under certainshearing and thermal histories of the P3HT<missing VAR>/PC60BM<missing VAR> gels.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 6, ',', 0]

PC60B
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177001, 177004)
, have reported that the gelation of P3HT<missing VAR> with[6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) under sub-ambientconditions can provide a continuous extrusion/coating based route to theprocessing of organic solar cells and that increases in power conversionefficiencies (PCEs) of the P3HT<missing VAR>/PC60BM<missing VAR> active layer are possible under certainshearing and thermal histories of the P3HT<missing VAR>/PC60BM<missing VAR> gels.
Featurization terminated normally.
0,0,0,0,0.016129032258064516,0.967741935483871,0,0,0,0,0,0,0,0,0.016129032258064516,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 6, ',', 0]

(PCEs)
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177063, 177067)
, have reported that the gelation of P3HT<missing VAR> with[6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) under sub-ambientconditions can provide a continuous extrusion/coating based route to theprocessing of organic solar cells and that increases in power conversionefficiencies (PCEs) of the P3HT<missing VAR>/PC60BM<missing VAR> active layer are possible under certainshearing and thermal histories of the P3HT<missing VAR>/PC60BM<missing VAR> gels.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[81.0, 6, ',', 0]

P3H
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177073, 177075)
, have reported that the gelation of P3HT<missing VAR> with[6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) under sub-ambientconditions can provide a continuous extrusion/coating based route to theprocessing of organic solar cells and that increases in power conversionefficiencies (PCEs) of the P3HT<missing VAR>/PC60BM<missing VAR> active layer are possible under certainshearing and thermal histories of the P3HT<missing VAR>/PC60BM<missing VAR> gels.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 6, ',', 0]

PC60B
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177078, 177081)
, have reported that the gelation of P3HT<missing VAR> with[6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) under sub-ambientconditions can provide a continuous extrusion/coating based route to theprocessing of organic solar cells and that increases in power conversionefficiencies (PCEs) of the P3HT<missing VAR>/PC60BM<missing VAR> active layer are possible under certainshearing and thermal histories of the P3HT<missing VAR>/PC60BM<missing VAR> gels.
Featurization terminated normally.
0,0,0,0,0.016129032258064516,0.967741935483871,0,0,0,0,0,0,0,0,0.016129032258064516,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 6, ',', 0]

P3H
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177109, 177111)
, have reported that the gelation of P3HT<missing VAR> with[6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) under sub-ambientconditions can provide a continuous extrusion/coating based route to theprocessing of organic solar cells and that increases in power conversionefficiencies (PCEs) of the P3HT<missing VAR>/PC60BM<missing VAR> active layer are possible under certainshearing and thermal histories of the P3HT<missing VAR>/PC60BM<missing VAR> gels.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 6, ',', 0]

PC60B
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177114, 177117)
, have reported that the gelation of P3HT<missing VAR> with[6,6]-phenyl-C61-butyric acid methyl ester (PC60BM) under sub-ambientconditions can provide a continuous extrusion/coating based route to theprocessing of organic solar cells and that increases in power conversionefficiencies (PCEs) of the P3HT<missing VAR>/PC60BM<missing VAR> active layer are possible under certainshearing and thermal histories of the P3HT<missing VAR>/PC60BM<missing VAR> gels.
Featurization terminated normally.
0,0,0,0,0.016129032258064516,0.967741935483871,0,0,0,0,0,0,0,0,0.016129032258064516,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 6, ',', 0]

P3H
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177155, 177157)
 Here oscillatory andsteady torsional flows were used to investigate the gel formation dynamics ofP3HT<missing VAR> with a recently proposed non-fullerene o<missing VAR>-IDTBR<missing VAR> under sub-ambientconditions.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 6, ',', 1]

I
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177174, 177174)
 Here oscillatory andsteady torsional flows were used to investigate the gel formation dynamics ofP3HT<missing VAR> with a recently proposed non-fullerene o<missing VAR>-IDTBR<missing VAR> under sub-ambientconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 6, ',', 1]

B
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177177, 177177)
 Here oscillatory andsteady torsional flows were used to investigate the gel formation dynamics ofP3HT<missing VAR> with a recently proposed non-fullerene o<missing VAR>-IDTBR<missing VAR> under sub-ambientconditions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 6, ',', 1]

P3H
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177244, 177246)
 The gel strengths defined on the basis of linear viscoelasticmaterial functions as determined via small-amplitude oscillatory shear wereobserved to be functions of the P3HT<missing VAR> and o<missing VAR>-IDTBR<missing VAR> concentrations, the solventused and the shearing conditions.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 6, ',', 2]

I
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177253, 177253)
 The gel strengths defined on the basis of linear viscoelasticmaterial functions as determined via small-amplitude oscillatory shear wereobserved to be functions of the P3HT<missing VAR> and o<missing VAR>-IDTBR<missing VAR> concentrations, the solventused and the shearing conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 6, ',', 2]

B
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177256, 177256)
 The gel strengths defined on the basis of linear viscoelasticmaterial functions as determined via small-amplitude oscillatory shear wereobserved to be functions of the P3HT<missing VAR> and o<missing VAR>-IDTBR<missing VAR> concentrations, the solventused and the shearing conditions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 6, ',', 2]

P3H
###Dynamics of the sub-ambient gelation and shearing of solutions of P3HT incorporated with a non-fullerene acceptor o-IDTBR towards active layer formation in bulk heterojunction organic solar cells|Li Quan,Dongrun Ju,Stephanie Lee,Dilhan M. Kalyon###
(177388, 177390)
 Overall, the gels which formed upon quenchingto sub-zero temperatures were found to be stable during small-amplitudeoscillatory shear (linear viscoelastic range) but broke down even at therelatively low shear rates associated with steady torsional flows, suggestingthat the shearing conditions used during the processing of gels of P3HT<missing VAR> withsmall molecule acceptor blends can alter the gel structure and possibly affectthe resulting active layer performance.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 6, ',', 3]

(UC)
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177510, 177513)
 Solar photons possessing energy less than the band-gap of a single-junctionsolar cell can be utilized via the up-conversion (UC) of two or more photons,resulting in the emission of a single above-bandgap photon.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[239.0, 6, '%', 4],[243.0, 1493, 'nm', 4],[300.0, 2.95, 'x', 5],[330.0, 1.5, 'x', 5],[479.0, 1, 'mm', 7]

UC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177563, 177564)
 Due to thenon-linear nature of UC, highly concentrated light is required, which istypically much greater than the practical concentration limits of a solar cell.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[188.0, 6, '%', 3],[192.0, 1493, 'nm', 3],[249.0, 2.95, 'x', 4],[279.0, 1.5, 'x', 4],[428.0, 1, 'mm', 6]

UC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177630, 177631)
It has been proposed that concentrating up-conversion solar cells (UC-SC) withoptical elements integrated into the device could help realize the high solarirradiance required.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[121.0, 6, '%', 2],[125.0, 1493, 'nm', 2],[182.0, 2.95, 'x', 3],[212.0, 1.5, 'x', 3],[361.0, 1, 'mm', 5]

C
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177634, 177634)
It has been proposed that concentrating up-conversion solar cells (UC-SC) withoptical elements integrated into the device could help realize the high solarirradiance required.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 6, '%', 2],[122.0, 1493, 'nm', 2],[179.0, 2.95, 'x', 3],[209.0, 1.5, 'x', 3],[358.0, 1, 'mm', 5]

UC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177684, 177685)
 To avoid scattering problems arising from common UCmaterials based on micro-crystalline powders, in this work concentrators areinvestigated with mono-crystalline up-converters in silicon-based tandemdevices.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[67.0, 6, '%', 1],[71.0, 1493, 'nm', 1],[128.0, 2.95, 'x', 2],[158.0, 1.5, 'x', 2],[307.0, 1, 'mm', 4]

W
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177767, 177767)
 An external quantum efficiency (EQE) of 6% with 1493 nm infraredillumination at 876 W/m<missing VAR>2 was obtained in upconverter device with concaveintegrated optics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 6, '%', 0],[11.0, 1493, 'nm', 0],[46.0, 2.95, 'x', 1],[76.0, 1.5, 'x', 1],[225.0, 1, 'mm', 3]

At
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177792, 177792)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 6, '%', 1],[36.0, 1493, 'nm', 1],[21.0, 2.95, 'x', 0],[51.0, 1.5, 'x', 0],[200.0, 1, 'mm', 2]

W
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177804, 177804)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 6, '%', 1],[48.0, 1493, 'nm', 1],[9.0, 2.95, 'x', 0],[39.0, 1.5, 'x', 0],[188.0, 1, 'mm', 2]

UC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177836, 177837)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[84.0, 6, '%', 1],[80.0, 1493, 'nm', 1],[23.0, 2.95, 'x', 0],[6.0, 1.5, 'x', 0],[155.0, 1, 'mm', 2]

SC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177839, 177840)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 6, '%', 1],[83.0, 1493, 'nm', 1],[26.0, 2.95, 'x', 0],[3.0, 1.5, 'x', 0],[152.0, 1, 'mm', 2]

UC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177856, 177857)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[104.0, 6, '%', 1],[100.0, 1493, 'nm', 1],[43.0, 2.95, 'x', 0],[13.0, 1.5, 'x', 0],[135.0, 1, 'mm', 2]

SC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177859, 177860)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 6, '%', 1],[103.0, 1493, 'nm', 1],[46.0, 2.95, 'x', 0],[16.0, 1.5, 'x', 0],[132.0, 1, 'mm', 2]

CPC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177864, 177866)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 6, '%', 1],[108.0, 1493, 'nm', 1],[51.0, 2.95, 'x', 0],[21.0, 1.5, 'x', 0],[126.0, 1, 'mm', 2]

W
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177875, 177875)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 6, '%', 1],[119.0, 1493, 'nm', 1],[62.0, 2.95, 'x', 0],[32.0, 1.5, 'x', 0],[117.0, 1, 'mm', 2]

CPC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177882, 177884)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 6, '%', 1],[126.0, 1493, 'nm', 1],[69.0, 2.95, 'x', 0],[39.0, 1.5, 'x', 0],[108.0, 1, 'mm', 2]

UC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177886, 177887)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[134.0, 6, '%', 1],[130.0, 1493, 'nm', 1],[73.0, 2.95, 'x', 0],[43.0, 1.5, 'x', 0],[105.0, 1, 'mm', 2]

SC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177889, 177890)
 At an irradiance higher than 90 W/m<missing VAR>2 (equivalent to 2.95xin the 1450-1600 nm range), the non-concentrating UC-SC exhibited 1.5x higherEQE than the UC-SC with CPC, while below 90 W/m<missing VAR>2 the CPC UC-SC exhibited1.95x<missing VAR> higher EQE than the non-concentrating reference device.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 6, '%', 1],[133.0, 1493, 'nm', 1],[76.0, 2.95, 'x', 0],[46.0, 1.5, 'x', 0],[102.0, 1, 'mm', 2]

UC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177932, 177933)
 Due to thenegligible scattering of the UC layer, the distribution of localized irradianceis revealed along with its effect on the performance of devices.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[180.0, 6, '%', 2],[176.0, 1493, 'nm', 2],[119.0, 2.95, 'x', 1],[89.0, 1.5, 'x', 1],[59.0, 1, 'mm', 1]

UC
###Single crystal monolithic up-converter solar cell device tandems with integrated optics|Georgios E. Arnaoutakis,Elena Favilla,Mauro Tonelli,Bryce S. Richards###
(177998, 177999)
 It is foundthat irradiance is accumulated within the first 1 mm of the UC layer with peaksat variable depths according to the concentrating scheme.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[246.0, 6, '%', 3],[242.0, 1493, 'nm', 3],[185.0, 2.95, 'x', 2],[155.0, 1.5, 'x', 2],[6.0, 1, 'mm', 0]

I
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178133, 178133)
Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule ID<missing VAR>IC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 122, ',', 3],[275.0, 166, ',', 5]

IC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178135, 178136)
Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule ID<missing VAR>IC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 122, ',', 3],[272.0, 166, ',', 5]

As
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178139, 178139)
 As emphasized in a recent review article [Chem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 122, ',', 2],[269.0, 166, ',', 4]

(OSC)
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178178, 178182)
 122, 14180 (2022)],organic solar cell (OSC) photoconversion efficiency has been rapidly evolvingwith results increasingly comparable to those of traditional inorganic solarcells.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 122, ',', 0],[226.0, 166, ',', 2]

OSC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178224, 178226)
 Historically, OSC performance improvement focused first on themorphology of P3HT<missing VAR>PC61BM<missing VAR> solar cells then went through different stages toshift lately interest towards nonfullerene acceptors (NFAs) as a replacement ofPC61BM<missing VAR> acceptor (ACC) molecule.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 122, ',', 1],[182.0, 166, ',', 1]

P3H
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178245, 178247)
 Historically, OSC performance improvement focused first on themorphology of P3HT<missing VAR>PC61BM<missing VAR> solar cells then went through different stages toshift lately interest towards nonfullerene acceptors (NFAs) as a replacement ofPC61BM<missing VAR> acceptor (ACC) molecule.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 122, ',', 1],[161.0, 166, ',', 1]

PC61B
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178249, 178252)
 Historically, OSC performance improvement focused first on themorphology of P3HT<missing VAR>PC61BM<missing VAR> solar cells then went through different stages toshift lately interest towards nonfullerene acceptors (NFAs) as a replacement ofPC61BM<missing VAR> acceptor (ACC) molecule.
Featurization terminated normally.
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 122, ',', 1],[156.0, 166, ',', 1]

(NFAs)
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178284, 178288)
 Historically, OSC performance improvement focused first on themorphology of P3HT<missing VAR>PC61BM<missing VAR> solar cells then went through different stages toshift lately interest towards nonfullerene acceptors (NFAs) as a replacement ofPC61BM<missing VAR> acceptor (ACC) molecule.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 122, ',', 1],[120.0, 166, ',', 1]

PC61B
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178299, 178302)
 Historically, OSC performance improvement focused first on themorphology of P3HT<missing VAR>PC61BM<missing VAR> solar cells then went through different stages toshift lately interest towards nonfullerene acceptors (NFAs) as a replacement ofPC61BM<missing VAR> acceptor (ACC) molecule.
Featurization terminated normally.
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 122, ',', 1],[106.0, 166, ',', 1]

C
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178310, 178310)
 Historically, OSC performance improvement focused first on themorphology of P3HT<missing VAR>PC61BM<missing VAR> solar cells then went through different stages toshift lately interest towards nonfullerene acceptors (NFAs) as a replacement ofPC61BM<missing VAR> acceptor (ACC) molecule.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 122, ',', 1],[98.0, 166, ',', 1]

NFAs
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178359, 178361)
 Here, we use density-functional theory (DFT)and time-dependent (TD) DFT to investigate four novel NFAs of A-D<missing VAR>-A(acceptor-donor-acceptor) form derived from the recently synthesized ID<missing VAR>IC-4Cl[Dyes and Pigments 166, 196 (2019)].
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 122, ',', 2],[47.0, 166, ',', 0]

I
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178392, 178392)
 Here, we use density-functional theory (DFT)and time-dependent (TD) DFT to investigate four novel NFAs of A-D<missing VAR>-A(acceptor-donor-acceptor) form derived from the recently synthesized ID<missing VAR>IC-4Cl[Dyes and Pigments 166, 196 (2019)].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 122, ',', 2],[16.0, 166, ',', 0]

IC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178394, 178395)
 Here, we use density-functional theory (DFT)and time-dependent (TD) DFT to investigate four novel NFAs of A-D<missing VAR>-A(acceptor-donor-acceptor) form derived from the recently synthesized ID<missing VAR>IC-4Cl[Dyes and Pigments 166, 196 (2019)].
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 122, ',', 2],[13.0, 166, ',', 0]

Cl
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178398, 178398)
 Here, we use density-functional theory (DFT)and time-dependent (TD) DFT to investigate four novel NFAs of A-D<missing VAR>-A(acceptor-donor-acceptor) form derived from the recently synthesized ID<missing VAR>IC-4Cl[Dyes and Pigments 166, 196 (2019)].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 122, ',', 2],[10.0, 166, ',', 0]

I
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178436, 178436)
 Our level of theory is carefully evalutedfor ID<missing VAR>IC-4Cl and then applied to the four novel NFAs in order to understand howchemical modifications lead to physical changes in cyclic voltammetry (CV)frontier molecular orbital (FM<missing VAR>O) energies and absorption spectra insolution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 122, ',', 3],[28.0, 166, ',', 1]

IC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178438, 178439)
 Our level of theory is carefully evalutedfor ID<missing VAR>IC-4Cl and then applied to the four novel NFAs in order to understand howchemical modifications lead to physical changes in cyclic voltammetry (CV)frontier molecular orbital (FM<missing VAR>O) energies and absorption spectra insolution.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 122, ',', 3],[30.0, 166, ',', 1]

Cl
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178442, 178442)
 Our level of theory is carefully evalutedfor ID<missing VAR>IC-4Cl and then applied to the four novel NFAs in order to understand howchemical modifications lead to physical changes in cyclic voltammetry (CV)frontier molecular orbital (FM<missing VAR>O) energies and absorption spectra insolution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 122, ',', 3],[34.0, 166, ',', 1]

NFAs
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178458, 178460)
 Our level of theory is carefully evalutedfor ID<missing VAR>IC-4Cl and then applied to the four novel NFAs in order to understand howchemical modifications lead to physical changes in cyclic voltammetry (CV)frontier molecular orbital (FM<missing VAR>O) energies and absorption spectra insolution.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 122, ',', 3],[50.0, 166, ',', 1]

(CV)
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178491, 178494)
 Our level of theory is carefully evalutedfor ID<missing VAR>IC-4Cl and then applied to the four novel NFAs in order to understand howchemical modifications lead to physical changes in cyclic voltammetry (CV)frontier molecular orbital (FM<missing VAR>O) energies and absorption spectra insolution.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 122, ',', 3],[83.0, 166, ',', 1]

F
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178504, 178504)
 Our level of theory is carefully evalutedfor ID<missing VAR>IC-4Cl and then applied to the four novel NFAs in order to understand howchemical modifications lead to physical changes in cyclic voltammetry (CV)frontier molecular orbital (FM<missing VAR>O) energies and absorption spectra insolution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 122, ',', 3],[96.0, 166, ',', 1]

O
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178506, 178506)
 Our level of theory is carefully evalutedfor ID<missing VAR>IC-4Cl and then applied to the four novel NFAs in order to understand howchemical modifications lead to physical changes in cyclic voltammetry (CV)frontier molecular orbital (FM<missing VAR>O) energies and absorption spectra insolution.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 122, ',', 3],[98.0, 166, ',', 1]

NFAs
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178546, 178548)
Finally we design and apply a new type of Scharber plot for NFAs basedupon some simple but we think reasonable assumptions.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 122, ',', 4],[138.0, 166, ',', 2]

ON
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178588, 178589)
 Unlike the originalScharber plots where a larger D<missing VAR>ON band gap favors a larger PCE<missing VAR>, our modifiedScharber plot reflects the fact that a smaller ACC band gap may favor PCE<missing VAR> byfilling in gaps in the D<missing VAR>ON acceptor spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 122, ',', 5],[180.0, 166, ',', 3]

PC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178601, 178602)
 Unlike the originalScharber plots where a larger D<missing VAR>ON band gap favors a larger PCE<missing VAR>, our modifiedScharber plot reflects the fact that a smaller ACC band gap may favor PCE<missing VAR> byfilling in gaps in the D<missing VAR>ON acceptor spectrum.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[441.0, 122, ',', 5],[193.0, 166, ',', 3]

CC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178628, 178629)
 Unlike the originalScharber plots where a larger D<missing VAR>ON band gap favors a larger PCE<missing VAR>, our modifiedScharber plot reflects the fact that a smaller ACC band gap may favor PCE<missing VAR> byfilling in gaps in the D<missing VAR>ON acceptor spectrum.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[468.0, 122, ',', 5],[220.0, 166, ',', 3]

PC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178639, 178640)
 Unlike the originalScharber plots where a larger D<missing VAR>ON band gap favors a larger PCE<missing VAR>, our modifiedScharber plot reflects the fact that a smaller ACC band gap may favor PCE<missing VAR> byfilling in gaps in the D<missing VAR>ON acceptor spectrum.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[479.0, 122, ',', 5],[231.0, 166, ',', 3]

ON
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178657, 178658)
 Unlike the originalScharber plots where a larger D<missing VAR>ON band gap favors a larger PCE<missing VAR>, our modifiedScharber plot reflects the fact that a smaller ACC band gap may favor PCE<missing VAR> byfilling in gaps in the D<missing VAR>ON acceptor spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[497.0, 122, ',', 5],[249.0, 166, ',', 3]

CV
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178719, 178720)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[559.0, 122, ',', 6],[311.0, 166, ',', 4]

O
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178735, 178735)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[575.0, 122, ',', 6],[327.0, 166, ',', 4]

HO
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178747, 178748)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[587.0, 122, ',', 6],[339.0, 166, ',', 4]

O
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178750, 178750)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[590.0, 122, ',', 6],[342.0, 166, ',', 4]

P
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178763, 178763)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[603.0, 122, ',', 6],[355.0, 166, ',', 4]

CC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178767, 178768)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[607.0, 122, ',', 6],[359.0, 166, ',', 4]

PC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178770, 178771)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[610.0, 122, ',', 6],[362.0, 166, ',', 4]

I
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178784, 178784)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[624.0, 122, ',', 6],[376.0, 166, ',', 4]

IC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178786, 178787)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[626.0, 122, ',', 6],[378.0, 166, ',', 4]

Cl
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178790, 178790)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[630.0, 122, ',', 6],[382.0, 166, ',', 4]

CC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178793, 178794)
 We predict that only thecandidate molecule with the least good acceptor A, with the highest frontiermolecular orbital energies, and one of the larger CV lowest unoccupiedmolecular orbital (LUMO) highest unoccupied molecular orbital (HOM<missing VAR>O) gaps, willyield a PM<missing VAR>6ACC PCE<missing VAR> exceeding that of the parent ID<missing VAR>IC-4Cl ACC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[633.0, 122, ',', 6],[385.0, 166, ',', 4]

HO
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178823, 178824)
 This candidatealso shows the largest oscillator strength for the primary 1 (HOM<missing VAR>O,LUMO)charge-transfer transition and the largest degree of delocalization of chargetransfer of any of the ACC molecules investigated here.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[663.0, 122, ',', 7],[415.0, 166, ',', 5]

O
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178826, 178826)
 This candidatealso shows the largest oscillator strength for the primary 1 (HOM<missing VAR>O,LUMO)charge-transfer transition and the largest degree of delocalization of chargetransfer of any of the ACC molecules investigated here.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[666.0, 122, ',', 7],[418.0, 166, ',', 5]

O
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178831, 178831)
 This candidatealso shows the largest oscillator strength for the primary 1 (HOM<missing VAR>O,LUMO)charge-transfer transition and the largest degree of delocalization of chargetransfer of any of the ACC molecules investigated here.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[671.0, 122, ',', 7],[423.0, 166, ',', 5]

CC
###Density-Functional Theory (DFT) and Time-Dependent DFT Study of the Chemical and Physical Origins of Key Photoproperties of End-Group Derivatives of the Nonfullerene Bulk Heterojunction Organic Solar Cell Acceptor Molecule IDIC|Taouali W,Alimi K,Nangraj A. S.,Casida M. E###
(178869, 178870)
 This candidatealso shows the largest oscillator strength for the primary 1 (HOM<missing VAR>O,LUMO)charge-transfer transition and the largest degree of delocalization of chargetransfer of any of the ACC molecules investigated here.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[709.0, 122, ',', 7],[461.0, 166, ',', 5]

MoS2
###Efficient Multiple Exciton Generation in Monolayer MoS2|Ashish Soni,Dushyant Kushavah,Li-Syuan Lu,Wen-Hao Chang,Suman Kalyan Pal###
(178899, 178901)
Efficient Multiple Exciton Generation in Monolayer MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 86, '%', 4]

Ds
###Efficient Multiple Exciton Generation in Monolayer MoS2|Ashish Soni,Dushyant Kushavah,Li-Syuan Lu,Wen-Hao Chang,Suman Kalyan Pal###
(179042, 179042)
 Recently, monolayer transition metal dichalcogenides (TMDs) haveemerged as promising light-harvesting materials because of their highabsorption coefficient.
EXCEPTION 3: IndexError for Ds
W
[59.0, 86, '%', 1]

PV
###Effect of Solar-Terrestrial Phenomena on Solar Cell's Efficiency|Kashif Bin Zaheer,Waseem Ahmed Ansari,Syed Mohammad Murshid Raza###
(179285, 179286)
 It is assumed that the solar cell efficiency of PV device is closely relatedto the solar irradiance, considered the solar parameter Global Solar Irradiance(G) and the meteorological parameters like daily data of Earth Skin Temperature(E), Average Temperature (T), Relative Humidity (H) and Dew Frost Point (D),for the coastal city Karachi and a non-coastal city Jacobabad, K and J<missing VAR> is usedas a subscripts for parameters of Karachi and Jacobabad respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 93, '%', 5]

(H)
###Effect of Solar-Terrestrial Phenomena on Solar Cell's Efficiency|Kashif Bin Zaheer,Waseem Ahmed Ansari,Syed Mohammad Murshid Raza###
(179366, 179368)
 It is assumed that the solar cell efficiency of PV device is closely relatedto the solar irradiance, considered the solar parameter Global Solar Irradiance(G) and the meteorological parameters like daily data of Earth Skin Temperature(E), Average Temperature (T), Relative Humidity (H) and Dew Frost Point (D),for the coastal city Karachi and a non-coastal city Jacobabad, K and J<missing VAR> is usedas a subscripts for parameters of Karachi and Jacobabad respectively.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 93, '%', 5]

K
###Effect of Solar-Terrestrial Phenomena on Solar Cell's Efficiency|Kashif Bin Zaheer,Waseem Ahmed Ansari,Syed Mohammad Murshid Raza###
(179407, 179407)
 It is assumed that the solar cell efficiency of PV device is closely relatedto the solar irradiance, considered the solar parameter Global Solar Irradiance(G) and the meteorological parameters like daily data of Earth Skin Temperature(E), Average Temperature (T), Relative Humidity (H) and Dew Frost Point (D),for the coastal city Karachi and a non-coastal city Jacobabad, K and J<missing VAR> is usedas a subscripts for parameters of Karachi and Jacobabad respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 93, '%', 5]

In
###Effect of Solar-Terrestrial Phenomena on Solar Cell's Efficiency|Kashif Bin Zaheer,Waseem Ahmed Ansari,Syed Mohammad Murshid Raza###
(179531, 179531)
 In mostcases results show good correlation among monthly actual and monthly forecastedvalues of all the predictors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 93, '%', 2]

SC
###TASC-1D-cSi: a simulation tool to scrutinize the thermal impacts on the performances of crystalline silicon solar cells|Olivier Dupré,Mohamed Amara,Rodolphe Vaillon###
(179723, 179724)
T<missing VAR>ASC-1D-cSi a simulation tool to scrutinize the thermal impacts on the performances of crystalline silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 1, 'D', 2]

Si
###TASC-1D-cSi: a simulation tool to scrutinize the thermal impacts on the performances of crystalline silicon solar cells|Olivier Dupré,Mohamed Amara,Rodolphe Vaillon###
(179730, 179730)
T<missing VAR>ASC-1D-cSi a simulation tool to scrutinize the thermal impacts on the performances of crystalline silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1, 'D', 2]

SC
###TASC-1D-cSi: a simulation tool to scrutinize the thermal impacts on the performances of crystalline silicon solar cells|Olivier Dupré,Mohamed Amara,Rodolphe Vaillon###
(179815, 179816)
 T<missing VAR>ASC-1D<missing VAR>(Thermal Analysis of Solar Cells - 1D, version c<missing VAR>Si) solves the coupledelectrical, radiative and thermal transport problems for a crystalline siliconcell, as a function of irradiation and thermal conditions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1, 'D', 0]

Si
###TASC-1D-cSi: a simulation tool to scrutinize the thermal impacts on the performances of crystalline silicon solar cells|Olivier Dupré,Mohamed Amara,Rodolphe Vaillon###
(179840, 179840)
 T<missing VAR>ASC-1D<missing VAR>(Thermal Analysis of Solar Cells - 1D, version c<missing VAR>Si) solves the coupledelectrical, radiative and thermal transport problems for a crystalline siliconcell, as a function of irradiation and thermal conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1, 'D', 0]

In
###TASC-1D-cSi: a simulation tool to scrutinize the thermal impacts on the performances of crystalline silicon solar cells|Olivier Dupré,Mohamed Amara,Rodolphe Vaillon###
(179892, 179892)
 In addition to theelectrical outputs that are obtained with the existing simulation tools, itprovides the cell equilibrium temperature as well as the spatial and spectraldistributions of many relevant quantities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1, 'D', 1]

III
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180212, 180214)
Growth Route Toward III-V Multispectral Solar Cells on Silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 29.6, '%', 8],[481.0, 30.3, '%', 9]

V
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180216, 180216)
Growth Route Toward III-V Multispectral Solar Cells on Silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[402.0, 29.6, '%', 8],[479.0, 30.3, '%', 9]

Ge
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180252, 180252)
 To date, high efficiency multijunction solar cells have been developed on Geor GaAs substrates for space applications, and terrestrial applications arehampered by high fabrication costs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 29.6, '%', 7],[443.0, 30.3, '%', 8]

GaAs
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180257, 180258)
 To date, high efficiency multijunction solar cells have been developed on Geor GaAs substrates for space applications, and terrestrial applications arehampered by high fabrication costs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 29.6, '%', 7],[437.0, 30.3, '%', 8]

In
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180289, 180289)
 In order to reduce this cost, we propose abreakthrough technique of III-V compound heteroepitaxy on Si substrates withoutgeneration of defects critical to PV applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 29.6, '%', 6],[406.0, 30.3, '%', 7]

III
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180315, 180317)
 In order to reduce this cost, we propose abreakthrough technique of III-V compound heteroepitaxy on Si substrates withoutgeneration of defects critical to PV applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 29.6, '%', 6],[378.0, 30.3, '%', 7]

V
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180319, 180319)
 In order to reduce this cost, we propose abreakthrough technique of III-V compound heteroepitaxy on Si substrates withoutgeneration of defects critical to PV applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 29.6, '%', 6],[376.0, 30.3, '%', 7]

Si
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180327, 180327)
 In order to reduce this cost, we propose abreakthrough technique of III-V compound heteroepitaxy on Si substrates withoutgeneration of defects critical to PV applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 29.6, '%', 6],[368.0, 30.3, '%', 7]

PV
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180344, 180345)
 In order to reduce this cost, we propose abreakthrough technique of III-V compound heteroepitaxy on Si substrates withoutgeneration of defects critical to PV applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 29.6, '%', 6],[350.0, 30.3, '%', 7]

Ga1-x
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180373, 180376)
 With this technique weexpect to achieve perfect integration of heterogeneous Ga1-xInxAsmicro-crystals on Si substrates.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[242.0, 29.6, '%', 5],[319.0, 30.3, '%', 6]

As
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180378, 180378)
 With this technique weexpect to achieve perfect integration of heterogeneous Ga1-xInxAsmicro-crystals on Si substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 29.6, '%', 5],[317.0, 30.3, '%', 6]

Si
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180387, 180387)
 With this technique weexpect to achieve perfect integration of heterogeneous Ga1-xInxAsmicro-crystals on Si substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 29.6, '%', 5],[308.0, 30.3, '%', 6]

In
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180392, 180392)
 In this paper, we show that this is the casefor x<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 29.6, '%', 4],[303.0, 30.3, '%', 5]

GaAs
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180420, 180421)
 GaAs crystals were grown by Epitaxial Lateral Overgrowth on Si (100)wafers covered with a thin SiO2 nanostructured layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 29.6, '%', 3],[274.0, 30.3, '%', 4]

Si
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180439, 180439)
 GaAs crystals were grown by Epitaxial Lateral Overgrowth on Si (100)wafers covered with a thin SiO2 nanostructured layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 29.6, '%', 3],[256.0, 30.3, '%', 4]

SiO2
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180456, 180458)
 GaAs crystals were grown by Epitaxial Lateral Overgrowth on Si (100)wafers covered with a thin SiO2 nanostructured layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 29.6, '%', 3],[237.0, 30.3, '%', 4]

B
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180486, 180486)
 The cristallographicstructure of these crystals is analysed by MEB and TEM imaging.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 29.6, '%', 2],[209.0, 30.3, '%', 3]

GaAs
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180512, 180513)
 Micro-Raman andMicro-Photomuminescence spectra of GaAs crystals grown with differentconditions are compared with those of a reference GaAs wafer in order to havemore insight on eventual local strains and their cristallinity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 29.6, '%', 1],[182.0, 30.3, '%', 2]

GaAs
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180540, 180541)
 Micro-Raman andMicro-Photomuminescence spectra of GaAs crystals grown with differentconditions are compared with those of a reference GaAs wafer in order to havemore insight on eventual local strains and their cristallinity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 29.6, '%', 1],[154.0, 30.3, '%', 2]

GaAs/Si
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180596, 180599)
 This work aimsat developping building blocks to further develop a GaAs/Si tandem demonstratorwith a potential conversion efficiency of 29.6% under AM1.5G spectrum withoutconcentration, as inferred from our realistic modeling.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[19.0, 29.6, '%', 0],[96.0, 30.3, '%', 1]

GaInP/GaAs
###Growth Route Toward III-V Multispectral Solar Cells on Silicon|C. Renard,N. Cherkashin,A. Jaffré,T. Molière,L. Vincent,A. Michel,J. Alvarez,J. P. Connolly,J. -P. Kleider,D. Mencaraglia,D. Bouchier###
(180707, 180712)
 This paper shows thatEpitaxial Lateral Overgrowth has a very interesting potential to developmultijunction solar cells on silicon approaching the today 30.3% world recordof a GaInP/GaAs tandem cell under the same illumination conditions, but on acostlier substrate than silicon.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 29.6, '%', 1],[12.0, 30.3, '%', 0]

In
###Atomistic origins of high-performance in hybrid halide perovskite solar cells|Jarvist M. Frost,Keith T. Butler,Federico Brivio,Christopher H. Hendon,Mark van Schilfgaarde,Aron Walsh###
(181397, 181397)
 In addition to the basicoptoelectronic properties essential for an efficient photovoltaic device(spectrally suitable band gap, high optical absorption, low carrier effectivemasses), the materials are structurally and compositionally flexible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Atomistic origins of high-performance in hybrid halide perovskite solar cells|Jarvist M. Frost,Keith T. Butler,Federico Brivio,Christopher H. Hendon,Mark van Schilfgaarde,Aron Walsh###
(181468, 181468)
 As weshow, hybrid perovskites exhibit spontaneous electric polarisation; we alsosuggest ways in which this can be tuned through judicious choice of the organiccation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Steric engineering of metal-halide perovskites with tunable optical band gaps|Marina R. Filip,Giles E. Eperon,Henry J. Snaith,Feliciano Giustino###
(181837, 181837)
 In thiscontext, rational in silico design represents a powerful tool for mapping thevast materials landscape and accelerating discovery.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuSbS2
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182116, 182119)
Accelerated development of CuSbS2 thin film photovoltaic device prototypes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 1, '%', 6]

CuSbS2
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182342, 182345)
 Here, we demonstrate an acceleratedapproach to development of thin film photovoltaic device prototypes based onthe novel CuSbS2 absorber, using the device architecture employed forCuInxGa(1-x)Se2 (CIG<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1, '%', 2]

Cu
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182363, 182363)
 Here, we demonstrate an acceleratedapproach to development of thin film photovoltaic device prototypes based onthe novel CuSbS2 absorber, using the device architecture employed forCuInxGa(1-x)Se2 (CIG<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1, '%', 2]

Ga(1-x)Se2
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182365, 182372)
 Here, we demonstrate an acceleratedapproach to development of thin film photovoltaic device prototypes based onthe novel CuSbS2 absorber, using the device architecture employed forCuInxGa(1-x)Se2 (CIG<missing VAR>S).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[114.0, 1, '%', 2]

CI
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182375, 182376)
 Here, we demonstrate an acceleratedapproach to development of thin film photovoltaic device prototypes based onthe novel CuSbS2 absorber, using the device architecture employed forCuInxGa(1-x)Se2 (CIG<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 1, '%', 2]

S
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182378, 182378)
 Here, we demonstrate an acceleratedapproach to development of thin film photovoltaic device prototypes based onthe novel CuSbS2 absorber, using the device architecture employed forCuInxGa(1-x)Se2 (CIG<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 1, '%', 2]

CuSbS2
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182397, 182400)
 The newly developed three-stage, self-regulated CuSbS2growth process enables the study of PV device performance trends as a functionof phase purity, crystallographic orientation, layer thickness of the absorber,and numerous back contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1, '%', 1]

PV
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182415, 182416)
 The newly developed three-stage, self-regulated CuSbS2growth process enables the study of PV device performance trends as a functionof phase purity, crystallographic orientation, layer thickness of the absorber,and numerous back contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1, '%', 1]

CuSbS2
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182474, 182477)
 This exploration results in initial CuSbS2 deviceprototypes with 1% conversion efficiency; currently limited by lowshort-circuit current due to poor collection of photoexcited electrons, and asmall open-circuit voltage due to a cliff-type conduction band offset at theCuSbS2/CdS interface (suggested by first-principles calculations).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1, '%', 0]

CuSbS2/CdS
###Accelerated development of CuSbS2 thin film photovoltaic device prototypes|Adam W. Welch,Lauryn L. Baranowski,Pawel Zawadzki,Clay DeHart,Steve Johnston,Stephan Lany,Colin A. Wolden,Andriy Zakutayev###
(182558, 182564)
 This exploration results in initial CuSbS2 deviceprototypes with 1% conversion efficiency; currently limited by lowshort-circuit current due to poor collection of photoexcited electrons, and asmall open-circuit voltage due to a cliff-type conduction band offset at theCuSbS2/CdS interface (suggested by first-principles calculations).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[72.0, 1, '%', 0]

(SC)
###Silicon solar cells efficiency analysis. Doping type and level optimization|A. V. Sachenko,V. P. Kostylyov,M. V. Gerasymenko,R. M. Korkishko,N. R. Kulish,M. I. Slipchenko,I. O. Sokolovskyi,V. V. Chernenko###
(182684, 182687)
 The theoretical analysis of photovoltaic conversion efficiency of highlyeffective silicon solar cells (SC) is performed for n<missing VAR>-type and p<missing VAR>-type bases.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Silicon solar cells efficiency analysis. Doping type and level optimization|A. V. Sachenko,V. P. Kostylyov,M. V. Gerasymenko,R. M. Korkishko,N. R. Kulish,M. I. Slipchenko,I. O. Sokolovskyi,V. V. Chernenko###
(182752, 182752)
The case is considered when the Shockley-Read-Hall recombination in the siliconbulk is determined by the deep level of Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Silicon solar cells efficiency analysis. Doping type and level optimization|A. V. Sachenko,V. P. Kostylyov,M. V. Gerasymenko,R. M. Korkishko,N. R. Kulish,M. I. Slipchenko,I. O. Sokolovskyi,V. V. Chernenko###
(182803, 182804)
 It is shown that due to theasymmetry of the recombination parameters of this level the photovoltaicconversion efficiency is increasing in the SC with the n<missing VAR>-type base anddecreasing in the SC with the p<missing VAR>-type base with the increase in doping.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Silicon solar cells efficiency analysis. Doping type and level optimization|A. V. Sachenko,V. P. Kostylyov,M. V. Gerasymenko,R. M. Korkishko,N. R. Kulish,M. I. Slipchenko,I. O. Sokolovskyi,V. V. Chernenko###
(182825, 182826)
 It is shown that due to theasymmetry of the recombination parameters of this level the photovoltaicconversion efficiency is increasing in the SC with the n<missing VAR>-type base anddecreasing in the SC with the p<missing VAR>-type base with the increase in doping.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiH
###Silicon solar cells efficiency analysis. Doping type and level optimization|A. V. Sachenko,V. P. Kostylyov,M. V. Gerasymenko,R. M. Korkishko,N. R. Kulish,M. I. Slipchenko,I. O. Sokolovskyi,V. V. Chernenko###
(182930, 182931)
 Theexperimental results are presented for the key characteristics of the solarcells based on alpha-SiH-n<missing VAR>-Si heterojunctions with intrinsic thin layer(HIT).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Silicon solar cells efficiency analysis. Doping type and level optimization|A. V. Sachenko,V. P. Kostylyov,M. V. Gerasymenko,R. M. Korkishko,N. R. Kulish,M. I. Slipchenko,I. O. Sokolovskyi,V. V. Chernenko###
(182935, 182935)
 Theexperimental results are presented for the key characteristics of the solarcells based on alpha-SiH-n<missing VAR>-Si heterojunctions with intrinsic thin layer(HIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HI
###Silicon solar cells efficiency analysis. Doping type and level optimization|A. V. Sachenko,V. P. Kostylyov,M. V. Gerasymenko,R. M. Korkishko,N. R. Kulish,M. I. Slipchenko,I. O. Sokolovskyi,V. V. Chernenko###
(182949, 182950)
 Theexperimental results are presented for the key characteristics of the solarcells based on alpha-SiH-n<missing VAR>-Si heterojunctions with intrinsic thin layer(HIT).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HI
###Silicon solar cells efficiency analysis. Doping type and level optimization|A. V. Sachenko,V. P. Kostylyov,M. V. Gerasymenko,R. M. Korkishko,N. R. Kulish,M. I. Slipchenko,I. O. Sokolovskyi,V. V. Chernenko###
(182975, 182976)
 A comparison between the experimental and calculated values of the HIT<missing VAR>cells characteristics is made.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Silicon solar cells efficiency analysis. Doping type and level optimization|A. V. Sachenko,V. P. Kostylyov,M. V. Gerasymenko,R. M. Korkishko,N. R. Kulish,M. I. Slipchenko,I. O. Sokolovskyi,V. V. Chernenko###
(183031, 183032)
 The surface recombination velocity and seriesresistance are determined from it with a complete coincidence of theexperimental and calculated SC parameters values.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183069, 183071)
Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 40, '%', 6],[372.0, 20, 'nm', 6]

Cs
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183092, 183092)
 Two-dimensional transition metal dichalcogenides (TMDCs) have recentlyattracted attention due to their superlative optical and electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 40, '%', 5],[351.0, 20, 'nm', 5]

In
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183122, 183122)
In particular, their extraordinary optical absorption and semiconducting bandgap have enabled demonstrations of photovoltaic response from heterostructurescomposed of TMDCs and other organic or inorganic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 40, '%', 4],[321.0, 20, 'nm', 4]

Cs
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183168, 183168)
In particular, their extraordinary optical absorption and semiconducting bandgap have enabled demonstrations of photovoltaic response from heterostructurescomposed of TMDCs and other organic or inorganic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 40, '%', 4],[275.0, 20, 'nm', 4]

Cs
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183239, 183239)
 However, theseearly studies were limited to devices at the micrometer scale and/or failed toexploit the unique optical absorption properties of single-layer TMDCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 40, '%', 3],[204.0, 20, 'nm', 3]

II
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183265, 183266)
 Here wepresent an experimental realization of a large-area type-II photovoltaicheterojunction using single-layer molybdenum disulfide (MoS2) as the primaryabsorber, by coupling it to the organic pi-donor polymer PT<missing VAR>B7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 40, '%', 2],[177.0, 20, 'nm', 2]

(MoS2)
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183283, 183287)
 Here wepresent an experimental realization of a large-area type-II photovoltaicheterojunction using single-layer molybdenum disulfide (MoS2) as the primaryabsorber, by coupling it to the organic pi-donor polymer PT<missing VAR>B7.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 40, '%', 2],[156.0, 20, 'nm', 2]

P
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183317, 183317)
 Here wepresent an experimental realization of a large-area type-II photovoltaicheterojunction using single-layer molybdenum disulfide (MoS2) as the primaryabsorber, by coupling it to the organic pi-donor polymer PT<missing VAR>B7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 40, '%', 2],[126.0, 20, 'nm', 2]

B7
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183319, 183320)
 Here wepresent an experimental realization of a large-area type-II photovoltaicheterojunction using single-layer molybdenum disulfide (MoS2) as the primaryabsorber, by coupling it to the organic pi-donor polymer PT<missing VAR>B7.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 40, '%', 2],[123.0, 20, 'nm', 2]

C
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183329, 183329)
 ThisTMDC-polymer heterojunction exhibits photoluminescence intensity that istunable as a function of the thickness of the polymer layer, ultimatelyenabling complete quenching of the TMDC photoluminescence.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 40, '%', 1],[114.0, 20, 'nm', 1]

C
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183385, 183385)
 ThisTMDC-polymer heterojunction exhibits photoluminescence intensity that istunable as a function of the thickness of the polymer layer, ultimatelyenabling complete quenching of the TMDC photoluminescence.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 40, '%', 1],[58.0, 20, 'nm', 1]

C
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183406, 183406)
 The strong opticalabsorption in the TMDC-polymer heterojunction produces an internal quantumefficiency exceeding 40% for an overall cell thickness of less than 20 nm,resulting in exceptional current density per absorbing thickness in comparisonto other organic and inorganic solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 40, '%', 0],[37.0, 20, 'nm', 0]

II
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183509, 183510)
 Furthermore, this work provides newinsight into the recombination processes in type-II TMDC-polymerheterojunctions and thus provides quantitative guidance to ongoing efforts torealize efficient TMDC-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 40, '%', 1],[66.0, 20, 'nm', 1]

C
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183515, 183515)
 Furthermore, this work provides newinsight into the recombination processes in type-II TMDC-polymerheterojunctions and thus provides quantitative guidance to ongoing efforts torealize efficient TMDC-based solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 40, '%', 1],[72.0, 20, 'nm', 1]

C
###Mutual Photoluminescence Quenching and Photovoltaic Effect in Large-Area Single-Layer MoS2-Polymer Heterojunctions|Tejas A. Shastry,Itamar Balla,Hadallia Bergeron,Samuel H. Amsterdam,Tobin J. Marks,Mark C. Hersam###
(183548, 183548)
 Furthermore, this work provides newinsight into the recombination processes in type-II TMDC-polymerheterojunctions and thus provides quantitative guidance to ongoing efforts torealize efficient TMDC-based solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 40, '%', 1],[105.0, 20, 'nm', 1]

BH
###Exciton delocalization incorporated drift-diffusion model for bulk-heterojunction organic solar cells|Zi Shuai Wang,Wei E. I. Sha,Wallace C. H. Choy###
(183633, 183634)
 Modeling the charge-generation process is highly important to understanddevice physics and optimize power conversion efficiency of bulk-heterojunction(BHJ) organic solar cells (OSCs).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###Exciton delocalization incorporated drift-diffusion model for bulk-heterojunction organic solar cells|Zi Shuai Wang,Wei E. I. Sha,Wallace C. H. Choy###
(183644, 183648)
 Modeling the charge-generation process is highly important to understanddevice physics and optimize power conversion efficiency of bulk-heterojunction(BHJ) organic solar cells (OSCs).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Exciton delocalization incorporated drift-diffusion model for bulk-heterojunction organic solar cells|Zi Shuai Wang,Wei E. I. Sha,Wallace C. H. Choy###
(183692, 183692)
 In this work, we developed a systematic numericalsimulation to describe the charge-generation process by a modifieddrift-diffusion model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSC
###Exciton delocalization incorporated drift-diffusion model for bulk-heterojunction organic solar cells|Zi Shuai Wang,Wei E. I. Sha,Wallace C. H. Choy###
(183894, 183896)
 By changing the exciton delocalization ratio, OSCperformances are comprehensively investigated under the conditions ofshort-circuit and open-circuit.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Exciton delocalization incorporated drift-diffusion model for bulk-heterojunction organic solar cells|Zi Shuai Wang,Wei E. I. Sha,Wallace C. H. Choy###
(183952, 183952)
 As a fundamental electricalanalysis of the delocalization mechanism, our work is important to understandand optimize the high-performance OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###Exciton delocalization incorporated drift-diffusion model for bulk-heterojunction organic solar cells|Zi Shuai Wang,Wei E. I. Sha,Wallace C. H. Choy###
(183995, 183997)
 As a fundamental electricalanalysis of the delocalization mechanism, our work is important to understandand optimize the high-performance OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Omnidirectional and broadband absorption enhancement from trapezoidal Mie resonators in semiconductor metasurfaces|Ragip A. Pala,Serkan Butun,Koray Aydin,Harry A. Atwater###
(184312, 184312)
A crossed trapezoid resonator shape of rectangular cross section is used toexcite broadband Mie resonances across the visible and near-IR<missing VAR> spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 12.0, 'mA', 2],[80.0, 210, 'nm', 2]

Si
###Omnidirectional and broadband absorption enhancement from trapezoidal Mie resonators in semiconductor metasurfaces|Ragip A. Pala,Serkan Butun,Koray Aydin,Harry A. Atwater###
(184398, 184398)
 A shortcircuit current density of 12.0 mA/cm2 is achieved in 210 nm thick patterned Sifilms, yielding a 4-fold increase compared to planar films of the samethickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 12.0, 'mA', 0],[6.0, 210, 'nm', 0]

V
###Bilayer Phosphorene: Effect of Stacking Order on Bandgap and its Potential Applications in Thin-Film Solar Cells|Jun Dai,Xiao Cheng Zeng###
(184611, 184611)
 Phosphorene, a monolayer of black phosphorus, is promising for nanoelectronicapplications not only because it is a natural p<missing VAR>-type semiconductor but also itpossesses a layer-number dependent direct bandgap (in the range of 0.3 eV1.5e<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.3, 'eV', 0],[120.0, 0.56, 'eV', 3],[246.0, 18, '%', 5],[251.0, 16, '%', 5]

V
###Bilayer Phosphorene: Effect of Stacking Order on Bandgap and its Potential Applications in Thin-Film Solar Cells|Jun Dai,Xiao Cheng Zeng###
(184691, 184691)
 We find that the direct bandgap of the bilayers can vary from 0.78 -1.04 e<missing VAR>V with three different stacking orders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.3, 'eV', 2],[40.0, 0.56, 'eV', 1],[166.0, 18, '%', 3],[171.0, 16, '%', 3]

In
###Bilayer Phosphorene: Effect of Stacking Order on Bandgap and its Potential Applications in Thin-Film Solar Cells|Jun Dai,Xiao Cheng Zeng###
(184704, 184704)
 In addition, a vertical electricfield can further reduce the bandgap down to 0.56 eV (at the field strength 0.5V/AA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 0.3, 'eV', 3],[27.0, 0.56, 'eV', 0],[153.0, 18, '%', 2],[158.0, 16, '%', 2]

V
###Bilayer Phosphorene: Effect of Stacking Order on Bandgap and its Potential Applications in Thin-Film Solar Cells|Jun Dai,Xiao Cheng Zeng###
(184745, 184745)
 In addition, a vertical electricfield can further reduce the bandgap down to 0.56 eV (at the field strength 0.5V/AA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0.3, 'eV', 3],[14.0, 0.56, 'eV', 0],[112.0, 18, '%', 2],[117.0, 16, '%', 2]

MoS2
###Bilayer Phosphorene: Effect of Stacking Order on Bandgap and its Potential Applications in Thin-Film Solar Cells|Jun Dai,Xiao Cheng Zeng###
(184771, 184773)
 More importantly, we find that when a monolayer of MoS2 issuperimposed with the p<missing VAR>-type AA- or AB-stacked bilayer phosphorene, thecombined tri-layer can be an effective solar-cell material with type-IIheterojunction alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0.3, 'eV', 4],[40.0, 0.56, 'eV', 1],[84.0, 18, '%', 1],[89.0, 16, '%', 1]

B
###Bilayer Phosphorene: Effect of Stacking Order on Bandgap and its Potential Applications in Thin-Film Solar Cells|Jun Dai,Xiao Cheng Zeng###
(184795, 184795)
 More importantly, we find that when a monolayer of MoS2 issuperimposed with the p<missing VAR>-type AA- or AB-stacked bilayer phosphorene, thecombined tri-layer can be an effective solar-cell material with type-IIheterojunction alignment.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 0.3, 'eV', 4],[64.0, 0.56, 'eV', 1],[62.0, 18, '%', 1],[67.0, 16, '%', 1]

II
###Bilayer Phosphorene: Effect of Stacking Order on Bandgap and its Potential Applications in Thin-Film Solar Cells|Jun Dai,Xiao Cheng Zeng###
(184831, 184832)
 More importantly, we find that when a monolayer of MoS2 issuperimposed with the p<missing VAR>-type AA- or AB-stacked bilayer phosphorene, thecombined tri-layer can be an effective solar-cell material with type-IIheterojunction alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 0.3, 'eV', 4],[100.0, 0.56, 'eV', 1],[25.0, 18, '%', 1],[30.0, 16, '%', 1]

B
###Bilayer Phosphorene: Effect of Stacking Order on Bandgap and its Potential Applications in Thin-Film Solar Cells|Jun Dai,Xiao Cheng Zeng###
(184874, 184874)
 The power conversion efficiency is predicted to be18% or 16% with AA- or AB-stacked bilayer phosphorene, higher than reportedefficiencies of the state-of-the-art trilayer graphene/transition metaldichalcogenide solar cells.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 0.3, 'eV', 5],[143.0, 0.56, 'eV', 2],[17.0, 18, '%', 0],[12.0, 16, '%', 0]

In
###Design principles for shift current photovoltaics|Ashley M. Cook,Benjamin M. Fregoso,Fernando de Juan,Sinisa Coh,Joel E. Moore###
(185005, 185005)
 In thiswork, we outline simple design principles for the optimization of shiftcurrents for frequencies near the band gap, derived from the analysis of ageneral effective model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeS
###Design principles for shift current photovoltaics|Ashley M. Cook,Benjamin M. Fregoso,Fernando de Juan,Sinisa Coh,Joel E. Moore###
(185202, 185203)
 We use our approach to identify two new classes ofshift current photovoltaics, ferroelectric polymer films and single-layerorthorhombic monochalcogenides such as GeS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Design principles for shift current photovoltaics|Ashley M. Cook,Benjamin M. Fregoso,Fernando de Juan,Sinisa Coh,Joel E. Moore###
(185296, 185296)
 Moreover, exploring theparameter space of these models we find photoresponsivities that can exceed100 m<missing VAR>A/W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Embedding Physics Domain Knowledge into a Bayesian Network Enables Layer-by-Layer Process Innovation for Photovoltaics|Zekun Ren,Felipe Oviedo,Muang Thway,Siyu I. P. Tian,Yue Wang,Hansong Xue,Jose Dario Perea,Mariya Layurova,Thomas Heumueller,Erik Birgersson,Armin Aberle,Christoph J. Brabec,Rolf Stangl,Shijing Sun,Qianxiao Li,Fen Lin,Ian Marius Peters,Tonio Buonassisi###
(185775, 185776)
 To demonstrate ourmethod, we perform layer-by-layer optimization of GaAs solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 100, 'x', 2],[60.0, 6.5, '%', 1]

In
###Embedding Physics Domain Knowledge into a Bayesian Network Enables Layer-by-Layer Process Innovation for Photovoltaics|Zekun Ren,Felipe Oviedo,Muang Thway,Siyu I. P. Tian,Yue Wang,Hansong Xue,Jose Dario Perea,Mariya Layurova,Thomas Heumueller,Erik Birgersson,Armin Aberle,Christoph J. Brabec,Rolf Stangl,Shijing Sun,Qianxiao Li,Fen Lin,Ian Marius Peters,Tonio Buonassisi###
(185783, 185783)
 In a singlecycle of learning, we find an improved growth temperature for the GaAs solarcells without any secondary measurements, and demonstrate a 6.5% relativeAM1.5G efficiency improvement above baseline and traditional black-boxoptimization methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 100, 'x', 3],[53.0, 6.5, '%', 0]

GaAs
###Embedding Physics Domain Knowledge into a Bayesian Network Enables Layer-by-Layer Process Innovation for Photovoltaics|Zekun Ren,Felipe Oviedo,Muang Thway,Siyu I. P. Tian,Yue Wang,Hansong Xue,Jose Dario Perea,Mariya Layurova,Thomas Heumueller,Erik Birgersson,Armin Aberle,Christoph J. Brabec,Rolf Stangl,Shijing Sun,Qianxiao Li,Fen Lin,Ian Marius Peters,Tonio Buonassisi###
(185813, 185814)
 In a singlecycle of learning, we find an improved growth temperature for the GaAs solarcells without any secondary measurements, and demonstrate a 6.5% relativeAM1.5G efficiency improvement above baseline and traditional black-boxoptimization methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 100, 'x', 3],[22.0, 6.5, '%', 0]

S
###Smooth anti-reflective three-dimensional textures for liquid-phase crystallized silicon thin-film solar cells on glass|David Eisenhauer,Grit Köppel,Klaus Jäger,Duote Chen,Oleksandra Shargaieca,Bernd Rech,Christiane Becker###
(186118, 186118)
 Here, theSMooth Anti-Reflective Three-dimensional (SMART) texture is introduced in orderto overcome this trade-off.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 12.1, '%', 4],[181.0, 640, 'mV', 2],[264.0, 23.3, 'mA', 3],[294.0, 11, '%', 3]

S
###Smooth anti-reflective three-dimensional textures for liquid-phase crystallized silicon thin-film solar cells on glass|David Eisenhauer,Grit Köppel,Klaus Jäger,Duote Chen,Oleksandra Shargaieca,Bernd Rech,Christiane Becker###
(186130, 186130)
 Here, theSMooth Anti-Reflective Three-dimensional (SMART) texture is introduced in orderto overcome this trade-off.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 12.1, '%', 4],[169.0, 640, 'mV', 2],[252.0, 23.3, 'mA', 3],[282.0, 11, '%', 3]

Si
###Smooth anti-reflective three-dimensional textures for liquid-phase crystallized silicon thin-film solar cells on glass|David Eisenhauer,Grit Köppel,Klaus Jäger,Duote Chen,Oleksandra Shargaieca,Bernd Rech,Christiane Becker###
(186165, 186165)
 By smoothing nanoimprinted SiOx nano-pillar arrayswith spin-coated TiOx layers, light-trapping properties of laser-crystallizedsilicon solar cells could significantly be improved as successfully shown inthree-dimensional simulations and in experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 12.1, '%', 5],[134.0, 640, 'mV', 1],[217.0, 23.3, 'mA', 2],[247.0, 11, '%', 2]

Ti
###Smooth anti-reflective three-dimensional textures for liquid-phase crystallized silicon thin-film solar cells on glass|David Eisenhauer,Grit Köppel,Klaus Jäger,Duote Chen,Oleksandra Shargaieca,Bernd Rech,Christiane Becker###
(186181, 186181)
 By smoothing nanoimprinted SiOx nano-pillar arrayswith spin-coated TiOx layers, light-trapping properties of laser-crystallizedsilicon solar cells could significantly be improved as successfully shown inthree-dimensional simulations and in experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 12.1, '%', 5],[118.0, 640, 'mV', 1],[201.0, 23.3, 'mA', 2],[231.0, 11, '%', 2]

At
###Smooth anti-reflective three-dimensional textures for liquid-phase crystallized silicon thin-film solar cells on glass|David Eisenhauer,Grit Köppel,Klaus Jäger,Duote Chen,Oleksandra Shargaieca,Bernd Rech,Christiane Becker###
(186236, 186236)
 At the same time, the smoothsurface morphology of SMART textures allows preserving electronic materialquality equivalent to that of planar reference samples and reaching Voc valuesabove 640 mV in 8 mu m<missing VAR> thin liquid-phase crystallized silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 12.1, '%', 6],[63.0, 640, 'mV', 0],[146.0, 23.3, 'mA', 1],[176.0, 11, '%', 1]

S
###Smooth anti-reflective three-dimensional textures for liquid-phase crystallized silicon thin-film solar cells on glass|David Eisenhauer,Grit Köppel,Klaus Jäger,Duote Chen,Oleksandra Shargaieca,Bernd Rech,Christiane Becker###
(186256, 186256)
 At the same time, the smoothsurface morphology of SMART textures allows preserving electronic materialquality equivalent to that of planar reference samples and reaching Voc valuesabove 640 mV in 8 mu m<missing VAR> thin liquid-phase crystallized silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 12.1, '%', 6],[43.0, 640, 'mV', 0],[126.0, 23.3, 'mA', 1],[156.0, 11, '%', 1]

S
###Smooth anti-reflective three-dimensional textures for liquid-phase crystallized silicon thin-film solar cells on glass|David Eisenhauer,Grit Köppel,Klaus Jäger,Duote Chen,Oleksandra Shargaieca,Bernd Rech,Christiane Becker###
(186390, 186390)
Furthermore, the short-circuit current density jsc could be increased from 21.0m<missing VAR>A cm-2 for planar reference cells with already optimized anti-reflectiveinterlayer stacks to 23.3 mA cm-2 on SMART textures, corresponding to arelative increase of 11%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 12.1, '%', 7],[91.0, 640, 'mV', 1],[8.0, 23.3, 'mA', 0],[22.0, 11, '%', 0]

MnO3
###Hexagonal Rare-Earth Manganites as Promising Photovoltaics and Light Polarizers|Xin Huang,Tula R. Paudel,Shuai Dong,Evgeny Y. Tsymbal###
(186516, 186518)
 Recently, hexagonal rare-earthmanganites, h-RMnO3 (R<missing VAR> is a rare-earth ion) have attracted considerableinterest due to their intricate multiferroic properties and improperferroelectricity characterized by a sizable remnant polarization and high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 33, '%', 2]

TbMnO3
###Hexagonal Rare-Earth Manganites as Promising Photovoltaics and Light Polarizers|Xin Huang,Tula R. Paudel,Shuai Dong,Evgeny Y. Tsymbal###
(186657, 186660)
 Using first-principles methods based ondensity-functional theory and considering h<missing VAR>-TbMnO3 as a representativemanganite, we predict a strong light absorption of this material in the solarspectrum range, resulting in the maximum light-to-electricity energy conversionefficiency up to 33%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 33, '%', 0]

TbMnO3
###Hexagonal Rare-Earth Manganites as Promising Photovoltaics and Light Polarizers|Xin Huang,Tula R. Paudel,Shuai Dong,Evgeny Y. Tsymbal###
(186760, 186763)
 We also predict an extraordinary optical linear dichroismand linear birefringence properties of h<missing VAR>-TbMnO3 in a broad range of opticalfrequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 33, '%', 1]

V
###How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment|G. A. Nemnes,Cristina Besleaga,A. G. Tomulescu,Alexandra Palici,L. Pintilie,A. Manolescu,Ioana Pintilie###
(186856, 186856)
How measurement protocols influence the dynamic J<missing VAR>-V characteristics of perovskite solar cells theory and experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment|G. A. Nemnes,Cristina Besleaga,A. G. Tomulescu,Alexandra Palici,L. Pintilie,A. Manolescu,Ioana Pintilie###
(186889, 186889)
 The dynamic effects observed in the J<missing VAR>-V measurements represent one importanthallmark in the behavior of the perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment|G. A. Nemnes,Cristina Besleaga,A. G. Tomulescu,Alexandra Palici,L. Pintilie,A. Manolescu,Ioana Pintilie###
(186973, 186974)
 Proper measurementprotocols (M<missing VAR>Ps) should be employed for the experimental data reproducibility,in particular for a reliable evaluation of the power conversion efficiency(PCE), as well as for a meaningful characterization of the type and magnitudeof the hysteresis.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment|G. A. Nemnes,Cristina Besleaga,A. G. Tomulescu,Alexandra Palici,L. Pintilie,A. Manolescu,Ioana Pintilie###
(187033, 187033)
 We discuss here several M<missing VAR>Ps by comparing the experimentalJ<missing VAR>-V characteristics with simulated ones using the dynamic electrical model(DEM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCEs
###How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment|G. A. Nemnes,Cristina Besleaga,A. G. Tomulescu,Alexandra Palici,L. Pintilie,A. Manolescu,Ioana Pintilie###
(187141, 187143)
 Under certain measurement conditions, a hysteresis-free behaviorwith relatively high PCEs may be observed, although the J<missing VAR>-V characteristics maybe far away from the stationary case.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
Abstract does not contain any numbers.

V
###How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment|G. A. Nemnes,Cristina Besleaga,A. G. Tomulescu,Alexandra Palici,L. Pintilie,A. Manolescu,Ioana Pintilie###
(187158, 187158)
 Under certain measurement conditions, a hysteresis-free behaviorwith relatively high PCEs may be observed, although the J<missing VAR>-V characteristics maybe far away from the stationary case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment|G. A. Nemnes,Cristina Besleaga,A. G. Tomulescu,Alexandra Palici,L. Pintilie,A. Manolescu,Ioana Pintilie###
(187287, 187287)
 In thiscontext, we define a hysteresis index which consistently assigns the hysteresistype and magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: theory and experiment|G. A. Nemnes,Cristina Besleaga,A. G. Tomulescu,Alexandra Palici,L. Pintilie,A. Manolescu,Ioana Pintilie###
(187369, 187369)
 Our DEM simulations, supported by experimental data,provide further guidance for an efficient and accurate determination of thestationary J<missing VAR>-V characteristics, showing that the type and magnitude of thedynamic hysteresis may be affected by unintentional pre-conditioning in typicalexperiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSCs)
###Advances in Modelling and Simulation of Halide Perovskites for Solar Cell Applications|Chol-Jun Yu###
(187456, 187460)
 Perovskite solar cells (PSCs) are attracting great attention as the mostpromising candidate for the next generation solar cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Advances in Modelling and Simulation of Halide Perovskites for Solar Cell Applications|Chol-Jun Yu###
(187545, 187547)
 Key components of PSCs are a variety of halideperovskites with ABX<missing VAR>3 stoichiometry used as a photoabsorber, which brought thefactual breakthrough in the field of photovoltaic (PV) technology with theiroutstanding optoelectronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Advances in Modelling and Simulation of Halide Perovskites for Solar Cell Applications|Chol-Jun Yu###
(187565, 187565)
 Key components of PSCs are a variety of halideperovskites with ABX<missing VAR>3 stoichiometry used as a photoabsorber, which brought thefactual breakthrough in the field of photovoltaic (PV) technology with theiroutstanding optoelectronic properties.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PV)
###Advances in Modelling and Simulation of Halide Perovskites for Solar Cell Applications|Chol-Jun Yu###
(187601, 187604)
 Key components of PSCs are a variety of halideperovskites with ABX<missing VAR>3 stoichiometry used as a photoabsorber, which brought thefactual breakthrough in the field of photovoltaic (PV) technology with theiroutstanding optoelectronic properties.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Advances in Modelling and Simulation of Halide Perovskites for Solar Cell Applications|Chol-Jun Yu###
(187624, 187626)
 To commercialize PSCs in the nearfuture, however, these materials need to be further improved for a betterperformance, represented by high efficiency and high stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Advances in Modelling and Simulation of Halide Perovskites for Solar Cell Applications|Chol-Jun Yu###
(187680, 187680)
 As in othermaterials development, atomistic modelling and simulation can play asignificant role in finding new functional halide perovskites as well asrevealing the underlying mechanisms of their material processes and properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Advances in Modelling and Simulation of Halide Perovskites for Solar Cell Applications|Chol-Jun Yu###
(187752, 187752)
In this sense, computational works for the halide perovskites, mostly focusingon first-principles works, are reviewed with an eye looking for an answer howto improve the performance of PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Advances in Modelling and Simulation of Halide Perovskites for Solar Cell Applications|Chol-Jun Yu###
(187817, 187819)
In this sense, computational works for the halide perovskites, mostly focusingon first-principles works, are reviewed with an eye looking for an answer howto improve the performance of PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoO3
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(187914, 187916)
Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 83, 'nm', 3],[260.0, 44.56, 'mJ', 5],[263.0, 2, ',', 5],[458.0, 5.55, '%', 7]

MoO3
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(187947, 187949)
 We present an efficient electrocatalytic material based on anchored MoO3nanoparticles on reduced graphene oxide (RGO) nanosheets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 83, 'nm', 2],[227.0, 44.56, 'mJ', 4],[230.0, 2, ',', 4],[425.0, 5.55, '%', 6]

O
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(187965, 187965)
 We present an efficient electrocatalytic material based on anchored MoO3nanoparticles on reduced graphene oxide (RGO) nanosheets.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 83, 'nm', 2],[211.0, 44.56, 'mJ', 4],[214.0, 2, ',', 4],[409.0, 5.55, '%', 6]

O
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(187984, 187984)
 After preparation ofgraphene oxide (G<missing VAR>O), the MoO3 nanoparticles anchored on G<missing VAR>O nanosheet by usingthe arc-discharge method.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 83, 'nm', 1],[192.0, 44.56, 'mJ', 3],[195.0, 2, ',', 3],[390.0, 5.55, '%', 5]

MoO3
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(187990, 187992)
 After preparation ofgraphene oxide (G<missing VAR>O), the MoO3 nanoparticles anchored on G<missing VAR>O nanosheet by usingthe arc-discharge method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 83, 'nm', 1],[184.0, 44.56, 'mJ', 3],[187.0, 2, ',', 3],[382.0, 5.55, '%', 5]

O
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188001, 188001)
 After preparation ofgraphene oxide (G<missing VAR>O), the MoO3 nanoparticles anchored on G<missing VAR>O nanosheet by usingthe arc-discharge method.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 83, 'nm', 1],[175.0, 44.56, 'mJ', 3],[178.0, 2, ',', 3],[373.0, 5.55, '%', 5]

MoO3
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188033, 188035)
 X<missing VAR>-ray diffraction patterns show that the MoO3nanoparticles are well crystallized on RGO in the orthorhombic crystallinephase with a crystallite size of 83 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 83, 'nm', 0],[141.0, 44.56, 'mJ', 2],[144.0, 2, ',', 2],[339.0, 5.55, '%', 4]

O
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188050, 188050)
 X<missing VAR>-ray diffraction patterns show that the MoO3nanoparticles are well crystallized on RGO in the orthorhombic crystallinephase with a crystallite size of 83 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 83, 'nm', 0],[126.0, 44.56, 'mJ', 2],[129.0, 2, ',', 2],[324.0, 5.55, '%', 4]

In
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188075, 188075)
 In addition, FT<missing VAR>-IR<missing VAR> and Ramanspectroscopy results show that during the arc-discharge process, the G<missing VAR>Onanosheets have been reduced and RGO nanosheets are decorated with MoO3nanoparticles which form a porous structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 83, 'nm', 1],[101.0, 44.56, 'mJ', 1],[104.0, 2, ',', 1],[299.0, 5.55, '%', 3]

F
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188080, 188080)
 In addition, FT<missing VAR>-IR<missing VAR> and Ramanspectroscopy results show that during the arc-discharge process, the G<missing VAR>Onanosheets have been reduced and RGO nanosheets are decorated with MoO3nanoparticles which form a porous structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 83, 'nm', 1],[96.0, 44.56, 'mJ', 1],[99.0, 2, ',', 1],[294.0, 5.55, '%', 3]

I
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188083, 188083)
 In addition, FT<missing VAR>-IR<missing VAR> and Ramanspectroscopy results show that during the arc-discharge process, the G<missing VAR>Onanosheets have been reduced and RGO nanosheets are decorated with MoO3nanoparticles which form a porous structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 83, 'nm', 1],[93.0, 44.56, 'mJ', 1],[96.0, 2, ',', 1],[291.0, 5.55, '%', 3]

O
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188113, 188113)
 In addition, FT<missing VAR>-IR<missing VAR> and Ramanspectroscopy results show that during the arc-discharge process, the G<missing VAR>Onanosheets have been reduced and RGO nanosheets are decorated with MoO3nanoparticles which form a porous structure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 83, 'nm', 1],[63.0, 44.56, 'mJ', 1],[66.0, 2, ',', 1],[261.0, 5.55, '%', 3]

O
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188128, 188128)
 In addition, FT<missing VAR>-IR<missing VAR> and Ramanspectroscopy results show that during the arc-discharge process, the G<missing VAR>Onanosheets have been reduced and RGO nanosheets are decorated with MoO3nanoparticles which form a porous structure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 83, 'nm', 1],[48.0, 44.56, 'mJ', 1],[51.0, 2, ',', 1],[246.0, 5.55, '%', 3]

MoO3
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188138, 188140)
 In addition, FT<missing VAR>-IR<missing VAR> and Ramanspectroscopy results show that during the arc-discharge process, the G<missing VAR>Onanosheets have been reduced and RGO nanosheets are decorated with MoO3nanoparticles which form a porous structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 83, 'nm', 1],[36.0, 44.56, 'mJ', 1],[39.0, 2, ',', 1],[234.0, 5.55, '%', 3]

O
###Electrochemical performance of decorated reduced graphene oxide by MoO3 nanoparticles as a counter electrode|Mahyar Servati,Reza Rasuli###
(188314, 188314)
 Our resultsshow that the electrochemical performance of the RGM electrode is better thanthe RGO electrode and is comparable with the Platinum electrode and also theefficiency of RGM electrode used in a dye-sensitized solar cell as a counterelectrode is 5.55% near to Platinum electrode performance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 83, 'nm', 4],[138.0, 44.56, 'mJ', 2],[135.0, 2, ',', 2],[60.0, 5.55, '%', 0]

CuInS2/ZnO
###Investigation of the Spatially Dependent Charge Collection Probability in CuInS$_2$/ZnO Colloidal Nanocrystal Solar Cells|Dorothea Scheunemann,Sebastian Wilken,Jürgen Parisi,Holger Borchert###
(188414, 188420)
Investigation of the Spatially Dependent Charge Collection Probability in CuInS2/ZnO Colloidal Nanocrystal Solar Cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[321.0, 40, 'nm', 6]

CuInS2
###Investigation of the Spatially Dependent Charge Collection Probability in CuInS$_2$/ZnO Colloidal Nanocrystal Solar Cells|Dorothea Scheunemann,Sebastian Wilken,Jürgen Parisi,Holger Borchert###
(188445, 188448)
 Solar cells with a heterojunction between colloidal CuInS2 and ZnOnanocrystals are an innovative concept in solution-processed photovoltaics, butthe conversion efficiency cannot compete yet with devices employing leadchalcogenide quantum dots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 40, 'nm', 5]

ZnO
###Investigation of the Spatially Dependent Charge Collection Probability in CuInS$_2$/ZnO Colloidal Nanocrystal Solar Cells|Dorothea Scheunemann,Sebastian Wilken,Jürgen Parisi,Holger Borchert###
(188452, 188453)
 Solar cells with a heterojunction between colloidal CuInS2 and ZnOnanocrystals are an innovative concept in solution-processed photovoltaics, butthe conversion efficiency cannot compete yet with devices employing leadchalcogenide quantum dots.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 40, 'nm', 5]

CuInS2/ZnO
###Investigation of the Spatially Dependent Charge Collection Probability in CuInS$_2$/ZnO Colloidal Nanocrystal Solar Cells|Dorothea Scheunemann,Sebastian Wilken,Jürgen Parisi,Holger Borchert###
(188530, 188536)
 Here, we present a detailed study on the chargecollection in CuInS2/ZnO solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[205.0, 40, 'nm', 4]

ZnO
###Investigation of the Spatially Dependent Charge Collection Probability in CuInS$_2$/ZnO Colloidal Nanocrystal Solar Cells|Dorothea Scheunemann,Sebastian Wilken,Jürgen Parisi,Holger Borchert###
(188563, 188564)
 An inverted device architecture wasutilized, in which the ZnO played an additional role as optical spacer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 40, 'nm', 3]

ZnO
###Investigation of the Spatially Dependent Charge Collection Probability in CuInS$_2$/ZnO Colloidal Nanocrystal Solar Cells|Dorothea Scheunemann,Sebastian Wilken,Jürgen Parisi,Holger Borchert###
(188590, 188591)
Variations of the ZnO thickness were exploited to create different chargegeneration profiles within the light-harvesting CuInS2 layer, which stronglyaffected both the external and internal quantum efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 40, 'nm', 2]

CuInS2
###Investigation of the Spatially Dependent Charge Collection Probability in CuInS$_2$/ZnO Colloidal Nanocrystal Solar Cells|Dorothea Scheunemann,Sebastian Wilken,Jürgen Parisi,Holger Borchert###
(188620, 188623)
Variations of the ZnO thickness were exploited to create different chargegeneration profiles within the light-harvesting CuInS2 layer, which stronglyaffected both the external and internal quantum efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 40, 'nm', 2]

CuInS2/ZnO
###Investigation of the Spatially Dependent Charge Collection Probability in CuInS$_2$/ZnO Colloidal Nanocrystal Solar Cells|Dorothea Scheunemann,Sebastian Wilken,Jürgen Parisi,Holger Borchert###
(188747, 188753)
 We provide evidence that only carriers generated withina narrow zone of circa 40 nm near the CuInS2/ZnO interface contribute to theexternal photocurrent.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[6.0, 40, 'nm', 0]

CV
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(188916, 188917)
CVD<missing VAR>-graphene/graphene flakes dual-films as advanced D<missing VAR>SSC counter electrodes.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 2.1, '%', 7],[443.0, 5.09, '%', 7],[451.0, 1, 'SUN', 7],[458.0, 0.1, 'SUN', 8],[492.0, 6.87, '%', 8]

SSC
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(188935, 188937)
CVD<missing VAR>-graphene/graphene flakes dual-films as advanced D<missing VAR>SSC counter electrodes.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 2.1, '%', 7],[423.0, 5.09, '%', 7],[431.0, 1, 'SUN', 7],[438.0, 0.1, 'SUN', 8],[472.0, 6.87, '%', 8]

In
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189054, 189054)
 In this work, we takeadvantage of two different graphene production methods to design an advanced,conductive oxide- and platinum-free, graphene-based counter electrode fordye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 2.1, '%', 4],[306.0, 5.09, '%', 4],[314.0, 1, 'SUN', 4],[321.0, 0.1, 'SUN', 5],[355.0, 6.87, '%', 5]

Cs
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189125, 189125)
 In this work, we takeadvantage of two different graphene production methods to design an advanced,conductive oxide- and platinum-free, graphene-based counter electrode fordye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 2.1, '%', 4],[235.0, 5.09, '%', 4],[243.0, 1, 'SUN', 4],[250.0, 0.1, 'SUN', 5],[284.0, 6.87, '%', 5]

In
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189129, 189129)
 In particular, we exploit the combinationof a graphene film, produced by chemical vapor deposition (CVD) (CVD<missing VAR>-graphene),with few-layer graphene (FLG) flakes, produced by liquid phase exfoliation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 2.1, '%', 3],[231.0, 5.09, '%', 3],[239.0, 1, 'SUN', 3],[246.0, 0.1, 'SUN', 4],[280.0, 6.87, '%', 4]

CV
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189163, 189164)
 In particular, we exploit the combinationof a graphene film, produced by chemical vapor deposition (CVD) (CVD<missing VAR>-graphene),with few-layer graphene (FLG) flakes, produced by liquid phase exfoliation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2.1, '%', 3],[196.0, 5.09, '%', 3],[204.0, 1, 'SUN', 3],[211.0, 0.1, 'SUN', 4],[245.0, 6.87, '%', 4]

CV
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189169, 189170)
 In particular, we exploit the combinationof a graphene film, produced by chemical vapor deposition (CVD) (CVD<missing VAR>-graphene),with few-layer graphene (FLG) flakes, produced by liquid phase exfoliation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 2.1, '%', 3],[190.0, 5.09, '%', 3],[198.0, 1, 'SUN', 3],[205.0, 0.1, 'SUN', 4],[239.0, 6.87, '%', 4]

F
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189187, 189187)
 In particular, we exploit the combinationof a graphene film, produced by chemical vapor deposition (CVD) (CVD<missing VAR>-graphene),with few-layer graphene (FLG) flakes, produced by liquid phase exfoliation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 2.1, '%', 3],[173.0, 5.09, '%', 3],[181.0, 1, 'SUN', 3],[188.0, 0.1, 'SUN', 4],[222.0, 6.87, '%', 4]

CV
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189209, 189210)
 TheCVD<missing VAR>-graphene is used as charge collector, while the FLG flakes, deposited atopby spray coating, act as catalyst for the reduction of the electrolyte redoxcouple (i.e.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2.1, '%', 2],[150.0, 5.09, '%', 2],[158.0, 1, 'SUN', 2],[165.0, 0.1, 'SUN', 3],[199.0, 6.87, '%', 3]

F
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189230, 189230)
 TheCVD<missing VAR>-graphene is used as charge collector, while the FLG flakes, deposited atopby spray coating, act as catalyst for the reduction of the electrolyte redoxcouple (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2.1, '%', 2],[130.0, 5.09, '%', 2],[138.0, 1, 'SUN', 2],[145.0, 0.1, 'SUN', 3],[179.0, 6.87, '%', 3]

I3
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189279, 189280)
, I3-/I-- and Co+2/+3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2.1, '%', 1],[80.0, 5.09, '%', 1],[88.0, 1, 'SUN', 1],[95.0, 0.1, 'SUN', 2],[129.0, 6.87, '%', 2]

I
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189283, 189283)
, I3-/I-- and Co+2/+3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2.1, '%', 1],[77.0, 5.09, '%', 1],[85.0, 1, 'SUN', 1],[92.0, 0.1, 'SUN', 2],[126.0, 6.87, '%', 2]

Co
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189289, 189289)
, I3-/I-- and Co+2/+3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2.1, '%', 1],[71.0, 5.09, '%', 1],[79.0, 1, 'SUN', 1],[86.0, 0.1, 'SUN', 2],[120.0, 6.87, '%', 2]

I3
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189317, 189318)
 The as-produced counter electrodes aretested in both I3-/I-- and Co+2/+3-based semitransparent D<missing VAR>SSCs, showing powerconversion efficiencies of 2.1% and 5.09%, respectively, under 1 SUNillumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2.1, '%', 0],[42.0, 5.09, '%', 0],[50.0, 1, 'SUN', 0],[57.0, 0.1, 'SUN', 1],[91.0, 6.87, '%', 1]

I
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189321, 189321)
 The as-produced counter electrodes aretested in both I3-/I-- and Co+2/+3-based semitransparent D<missing VAR>SSCs, showing powerconversion efficiencies of 2.1% and 5.09%, respectively, under 1 SUNillumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2.1, '%', 0],[39.0, 5.09, '%', 0],[47.0, 1, 'SUN', 0],[54.0, 0.1, 'SUN', 1],[88.0, 6.87, '%', 1]

Co
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189327, 189327)
 The as-produced counter electrodes aretested in both I3-/I-- and Co+2/+3-based semitransparent D<missing VAR>SSCs, showing powerconversion efficiencies of 2.1% and 5.09%, respectively, under 1 SUNillumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2.1, '%', 0],[33.0, 5.09, '%', 0],[41.0, 1, 'SUN', 0],[48.0, 0.1, 'SUN', 1],[82.0, 6.87, '%', 1]

SSCs
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189339, 189341)
 The as-produced counter electrodes aretested in both I3-/I-- and Co+2/+3-based semitransparent D<missing VAR>SSCs, showing powerconversion efficiencies of 2.1% and 5.09%, respectively, under 1 SUNillumination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2.1, '%', 0],[19.0, 5.09, '%', 0],[27.0, 1, 'SUN', 0],[34.0, 0.1, 'SUN', 1],[68.0, 6.87, '%', 1]

At
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189374, 189374)
 At 0.1 SUN, Co+2/+3-based D<missing VAR>SSCs achieve a power conversionefficiency as high as 6.87%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2.1, '%', 1],[14.0, 5.09, '%', 1],[6.0, 1, 'SUN', 1],[1.0, 0.1, 'SUN', 0],[35.0, 6.87, '%', 0]

Co
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189378, 189378)
 At 0.1 SUN, Co+2/+3-based D<missing VAR>SSCs achieve a power conversionefficiency as high as 6.87%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2.1, '%', 1],[18.0, 5.09, '%', 1],[10.0, 1, 'SUN', 1],[3.0, 0.1, 'SUN', 0],[31.0, 6.87, '%', 0]

SSCs
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189388, 189390)
 At 0.1 SUN, Co+2/+3-based D<missing VAR>SSCs achieve a power conversionefficiency as high as 6.87%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2.1, '%', 1],[28.0, 5.09, '%', 1],[20.0, 1, 'SUN', 1],[13.0, 0.1, 'SUN', 0],[19.0, 6.87, '%', 0]

CV
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189456, 189457)
 Our results demonstrate that the electrical,optical, chemical and catalytic properties of graphene-based dual films,designed by combining CVD<missing VAR>-graphene and FLG flakes, are effective alternativesto FT<missing VAR>O/Pt counter electrodes for D<missing VAR>SSCs for both outdoor and indoorapplications.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2.1, '%', 2],[96.0, 5.09, '%', 2],[88.0, 1, 'SUN', 2],[81.0, 0.1, 'SUN', 1],[47.0, 6.87, '%', 1]

F
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189464, 189464)
 Our results demonstrate that the electrical,optical, chemical and catalytic properties of graphene-based dual films,designed by combining CVD<missing VAR>-graphene and FLG flakes, are effective alternativesto FT<missing VAR>O/Pt counter electrodes for D<missing VAR>SSCs for both outdoor and indoorapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2.1, '%', 2],[104.0, 5.09, '%', 2],[96.0, 1, 'SUN', 2],[89.0, 0.1, 'SUN', 1],[55.0, 6.87, '%', 1]

F
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189480, 189480)
 Our results demonstrate that the electrical,optical, chemical and catalytic properties of graphene-based dual films,designed by combining CVD<missing VAR>-graphene and FLG flakes, are effective alternativesto FT<missing VAR>O/Pt counter electrodes for D<missing VAR>SSCs for both outdoor and indoorapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2.1, '%', 2],[120.0, 5.09, '%', 2],[112.0, 1, 'SUN', 2],[105.0, 0.1, 'SUN', 1],[71.0, 6.87, '%', 1]

O/Pt
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189482, 189484)
 Our results demonstrate that the electrical,optical, chemical and catalytic properties of graphene-based dual films,designed by combining CVD<missing VAR>-graphene and FLG flakes, are effective alternativesto FT<missing VAR>O/Pt counter electrodes for D<missing VAR>SSCs for both outdoor and indoorapplications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[127.0, 2.1, '%', 2],[122.0, 5.09, '%', 2],[114.0, 1, 'SUN', 2],[107.0, 0.1, 'SUN', 1],[73.0, 6.87, '%', 1]

SSCs
###CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes|Andrea Capasso,Sebastiano Bellani,Alessandro Lorenzo Palma,Leyla Najafi1,Antonio Esaù Del Rio Castillo,Nicola Curreli1,Lucio Cinà,Vaidotas Miseikis,Camilla Coletti,Giuseppe Calogero,Vittorio Pellegrini,Aldo Di Carlo,Francesco Bonaccorso###
(189493, 189495)
 Our results demonstrate that the electrical,optical, chemical and catalytic properties of graphene-based dual films,designed by combining CVD<missing VAR>-graphene and FLG flakes, are effective alternativesto FT<missing VAR>O/Pt counter electrodes for D<missing VAR>SSCs for both outdoor and indoorapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 2.1, '%', 2],[133.0, 5.09, '%', 2],[125.0, 1, 'SUN', 2],[118.0, 0.1, 'SUN', 1],[84.0, 6.87, '%', 1]

Cs2AgBiCl6
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189541, 189546)
High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs2AgBiCl6 from First-Principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 64, 'combinations', 6],[388.0, 32.08, '%', 7],[393.0, 30.91, '%', 7]

Cl6
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189575, 189576)
 Cs2AgBiCl6) has emergedas an efficient and environmentally friendly alternative to lead halideperovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 64, 'combinations', 4],[358.0, 32.08, '%', 5],[363.0, 30.91, '%', 5]

Cs2AgBiCl6
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189612, 189617)
 To make Cs2AgBiCl6 optically active in the visible region ofsolar spectrum, band gap engineering approach has been undertaken.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 64, 'combinations', 3],[317.0, 32.08, '%', 4],[322.0, 30.91, '%', 4]

Cs2AgBiCl6
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189657, 189662)
 UsingCs2AgBiCl6 as a host, band gap and optical properties of Cs2AgBiCl6have been modulated by alloying with M<missing VAR>(I), M<missing VAR>(II), and M<missing VAR>(III) cations atAg-/Bi-sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 64, 'combinations', 2],[272.0, 32.08, '%', 3],[277.0, 30.91, '%', 3]

Cs2AgBiCl6
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189683, 189688)
 UsingCs2AgBiCl6 as a host, band gap and optical properties of Cs2AgBiCl6have been modulated by alloying with M<missing VAR>(I), M<missing VAR>(II), and M<missing VAR>(III) cations atAg-/Bi-sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 64, 'combinations', 2],[246.0, 32.08, '%', 3],[251.0, 30.91, '%', 3]

(I)
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189704, 189706)
 UsingCs2AgBiCl6 as a host, band gap and optical properties of Cs2AgBiCl6have been modulated by alloying with M<missing VAR>(I), M<missing VAR>(II), and M<missing VAR>(III) cations atAg-/Bi-sites.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 64, 'combinations', 2],[228.0, 32.08, '%', 3],[233.0, 30.91, '%', 3]

(II)
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189710, 189713)
 UsingCs2AgBiCl6 as a host, band gap and optical properties of Cs2AgBiCl6have been modulated by alloying with M<missing VAR>(I), M<missing VAR>(II), and M<missing VAR>(III) cations atAg-/Bi-sites.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 64, 'combinations', 2],[221.0, 32.08, '%', 3],[226.0, 30.91, '%', 3]

(III)
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189719, 189723)
 UsingCs2AgBiCl6 as a host, band gap and optical properties of Cs2AgBiCl6have been modulated by alloying with M<missing VAR>(I), M<missing VAR>(II), and M<missing VAR>(III) cations atAg-/Bi-sites.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 64, 'combinations', 2],[211.0, 32.08, '%', 3],[216.0, 30.91, '%', 3]

Ag
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189730, 189730)
 UsingCs2AgBiCl6 as a host, band gap and optical properties of Cs2AgBiCl6have been modulated by alloying with M<missing VAR>(I), M<missing VAR>(II), and M<missing VAR>(III) cations atAg-/Bi-sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 64, 'combinations', 2],[204.0, 32.08, '%', 3],[209.0, 30.91, '%', 3]

Bi
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189733, 189733)
 UsingCs2AgBiCl6 as a host, band gap and optical properties of Cs2AgBiCl6have been modulated by alloying with M<missing VAR>(I), M<missing VAR>(II), and M<missing VAR>(III) cations atAg-/Bi-sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 64, 'combinations', 2],[201.0, 32.08, '%', 3],[206.0, 30.91, '%', 3]

(SOC)
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189782, 189786)
 Here, we have employed density functional theory (DFT) withsuitable exchange-correlation functionals in light of spin-orbit coupling (SOC)to determine the stability, band gap and optical properties of differentcompositions, that are obtained on Ag-Cl and Bi-Cl sublattices mixing.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 64, 'combinations', 1],[148.0, 32.08, '%', 2],[153.0, 30.91, '%', 2]

Ag
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189824, 189824)
 Here, we have employed density functional theory (DFT) withsuitable exchange-correlation functionals in light of spin-orbit coupling (SOC)to determine the stability, band gap and optical properties of differentcompositions, that are obtained on Ag-Cl and Bi-Cl sublattices mixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 64, 'combinations', 1],[110.0, 32.08, '%', 2],[115.0, 30.91, '%', 2]

Cl
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189826, 189826)
 Here, we have employed density functional theory (DFT) withsuitable exchange-correlation functionals in light of spin-orbit coupling (SOC)to determine the stability, band gap and optical properties of differentcompositions, that are obtained on Ag-Cl and Bi-Cl sublattices mixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 64, 'combinations', 1],[108.0, 32.08, '%', 2],[113.0, 30.91, '%', 2]

Bi
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189830, 189830)
 Here, we have employed density functional theory (DFT) withsuitable exchange-correlation functionals in light of spin-orbit coupling (SOC)to determine the stability, band gap and optical properties of differentcompositions, that are obtained on Ag-Cl and Bi-Cl sublattices mixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 64, 'combinations', 1],[104.0, 32.08, '%', 2],[109.0, 30.91, '%', 2]

Cl
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189832, 189832)
 Here, we have employed density functional theory (DFT) withsuitable exchange-correlation functionals in light of spin-orbit coupling (SOC)to determine the stability, band gap and optical properties of differentcompositions, that are obtained on Ag-Cl and Bi-Cl sublattices mixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 64, 'combinations', 1],[102.0, 32.08, '%', 2],[107.0, 30.91, '%', 2]

Cs2AgBiCl6
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189849, 189854)
 Onanalyzing the 64 combinations within Cs2AgBiCl6, we have identified 19promising configurations having band gap sensitive to solar cell applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 64, 'combinations', 0],[80.0, 32.08, '%', 1],[85.0, 30.91, '%', 1]

Ge(II)
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189898, 189902)
The most suitable configurations with Ge(II) and Sn(II) substitutions havespectroscopic limited maximum efficiency (SLME) of 32.08% and 30.91%,respectively, which are apt for solar cell absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 64, 'combinations', 1],[32.0, 32.08, '%', 0],[37.0, 30.91, '%', 0]

Sn(II)
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189906, 189910)
The most suitable configurations with Ge(II) and Sn(II) substitutions havespectroscopic limited maximum efficiency (SLME) of 32.08% and 30.91%,respectively, which are apt for solar cell absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 64, 'combinations', 1],[24.0, 32.08, '%', 0],[29.0, 30.91, '%', 0]

S
###High-Throughput Screening for Band gap Engineering by Sublattice Mixing of Cs$_2$AgBiCl$_6$ from First-Principles|Deepika Gill,Preeti Bhumla,Manish Kumar,Saswata Bhattacharya###
(189926, 189926)
The most suitable configurations with Ge(II) and Sn(II) substitutions havespectroscopic limited maximum efficiency (SLME) of 32.08% and 30.91%,respectively, which are apt for solar cell absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 64, 'combinations', 1],[8.0, 32.08, '%', 0],[13.0, 30.91, '%', 0]

PbS
###Efficient and Stable PbS Quantum Dot Solar Cells by Triple-Cation Perovskite Passivation|Miguel Albaladejo-Siguan,David Becker-Koch,Alexander D. Taylor,Qing Sun,Vincent Lami,Pola Goldberg Oppenheimer,Fabian Paulus,Yana Vaynzof###
(189976, 189977)
Efficient and Stable PbS Quantum Dot Solar Cells by Triple-Cation Perovskite Passivation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 1200, 'h', 3]

Ds
###Efficient and Stable PbS Quantum Dot Solar Cells by Triple-Cation Perovskite Passivation|Miguel Albaladejo-Siguan,David Becker-Koch,Alexander D. Taylor,Qing Sun,Vincent Lami,Pola Goldberg Oppenheimer,Fabian Paulus,Yana Vaynzof###
(190008, 190008)
 Solution-processed quantum dots (Q<missing VAR>Ds) have a high potential for fabricatinglow cost, flexible and large-scale solar energy harvesting devices.
EXCEPTION 3: IndexError for Ds
PbS
[196.0, 1200, 'h', 2]

(PCEs)
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190454, 190458)
 The power conversion efficiencies (PCEs) of organic solar cells (OSCs) usingnon-fullerene acceptors (NFAs) have now reached 18%.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[37.0, 18, '%', 0],[71.0, 20, '%', 1],[270.0, 90, '%', 4],[275.0, 60, 'mV', 4],[384.0, 3, 'CTE', 6],[418.0, 3, 'CTE', 6],[475.0, 20, '%', 8]

(OSCs)
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190468, 190472)
 The power conversion efficiencies (PCEs) of organic solar cells (OSCs) usingnon-fullerene acceptors (NFAs) have now reached 18%.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 18, '%', 0],[57.0, 20, '%', 1],[256.0, 90, '%', 4],[261.0, 60, 'mV', 4],[370.0, 3, 'CTE', 6],[404.0, 3, 'CTE', 6],[461.0, 20, '%', 8]

(NFAs)
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190483, 190487)
 The power conversion efficiencies (PCEs) of organic solar cells (OSCs) usingnon-fullerene acceptors (NFAs) have now reached 18%.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 18, '%', 0],[42.0, 20, '%', 1],[241.0, 90, '%', 4],[246.0, 60, 'mV', 4],[355.0, 3, 'CTE', 6],[389.0, 3, 'CTE', 6],[446.0, 20, '%', 8]

PCEs
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190524, 190526)
 However, this is stilllower than inorganic solar cells, for which PCEs >20% are commonplace.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[29.0, 18, '%', 1],[3.0, 20, '%', 0],[202.0, 90, '%', 3],[207.0, 60, 'mV', 3],[316.0, 3, 'CTE', 5],[350.0, 3, 'CTE', 5],[407.0, 20, '%', 7]

OSCs
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190548, 190550)
 A keyreason is that OSCs still show low open-circuit voltages (Voc) relative totheir optical band gaps, attributed to non-radiative recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 18, '%', 2],[19.0, 20, '%', 1],[178.0, 90, '%', 2],[183.0, 60, 'mV', 2],[292.0, 3, 'CTE', 4],[326.0, 3, 'CTE', 4],[383.0, 20, '%', 6]

OSCs
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190595, 190597)
 For OSCs tocompete with inorganics in efficiency, all non-radiative loss pathways must beidentified and where possible, removed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 18, '%', 3],[66.0, 20, '%', 2],[131.0, 90, '%', 1],[136.0, 60, 'mV', 1],[245.0, 3, 'CTE', 3],[279.0, 3, 'CTE', 3],[336.0, 20, '%', 5]

NF
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190653, 190654)
 Here, we show that in most NFA OSCs,the majority of charge recombination at open-circuit proceeds via formation ofnon-emissive NFA triplet excitons (T<missing VAR>1); in the benchmark PM<missing VAR>6Y6 blend, thisfraction reaches 90%, contributing 60 mV to the reduction of Voc.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 18, '%', 4],[124.0, 20, '%', 3],[74.0, 90, '%', 0],[79.0, 60, 'mV', 0],[188.0, 3, 'CTE', 2],[222.0, 3, 'CTE', 2],[279.0, 20, '%', 4]

OSCs
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190657, 190659)
 Here, we show that in most NFA OSCs,the majority of charge recombination at open-circuit proceeds via formation ofnon-emissive NFA triplet excitons (T<missing VAR>1); in the benchmark PM<missing VAR>6Y6 blend, thisfraction reaches 90%, contributing 60 mV to the reduction of Voc.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 18, '%', 4],[128.0, 20, '%', 3],[69.0, 90, '%', 0],[74.0, 60, 'mV', 0],[183.0, 3, 'CTE', 2],[217.0, 3, 'CTE', 2],[274.0, 20, '%', 4]

NF
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190692, 190693)
 Here, we show that in most NFA OSCs,the majority of charge recombination at open-circuit proceeds via formation ofnon-emissive NFA triplet excitons (T<missing VAR>1); in the benchmark PM<missing VAR>6Y6 blend, thisfraction reaches 90%, contributing 60 mV to the reduction of Voc.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 18, '%', 4],[163.0, 20, '%', 3],[35.0, 90, '%', 0],[40.0, 60, 'mV', 0],[149.0, 3, 'CTE', 2],[183.0, 3, 'CTE', 2],[240.0, 20, '%', 4]

P
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190712, 190712)
 Here, we show that in most NFA OSCs,the majority of charge recombination at open-circuit proceeds via formation ofnon-emissive NFA triplet excitons (T<missing VAR>1); in the benchmark PM<missing VAR>6Y6 blend, thisfraction reaches 90%, contributing 60 mV to the reduction of Voc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 18, '%', 4],[183.0, 20, '%', 3],[16.0, 90, '%', 0],[21.0, 60, 'mV', 0],[130.0, 3, 'CTE', 2],[164.0, 3, 'CTE', 2],[221.0, 20, '%', 4]

Y6
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190715, 190716)
 Here, we show that in most NFA OSCs,the majority of charge recombination at open-circuit proceeds via formation ofnon-emissive NFA triplet excitons (T<missing VAR>1); in the benchmark PM<missing VAR>6Y6 blend, thisfraction reaches 90%, contributing 60 mV to the reduction of Voc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 18, '%', 4],[186.0, 20, '%', 3],[12.0, 90, '%', 0],[17.0, 60, 'mV', 0],[126.0, 3, 'CTE', 2],[160.0, 3, 'CTE', 2],[217.0, 20, '%', 4]

NF
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190790, 190791)
 We develop anew design to prevent recombination via this non-radiative channel through theengineering of significant hybridisation between the NFA T<missing VAR>1 and thespin-triplet charge transfer exciton (3CTE).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 18, '%', 5],[261.0, 20, '%', 4],[62.0, 90, '%', 1],[57.0, 60, 'mV', 1],[51.0, 3, 'CTE', 1],[85.0, 3, 'CTE', 1],[142.0, 20, '%', 3]

C
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190814, 190814)
 We develop anew design to prevent recombination via this non-radiative channel through theengineering of significant hybridisation between the NFA T<missing VAR>1 and thespin-triplet charge transfer exciton (3CTE).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 18, '%', 5],[285.0, 20, '%', 4],[86.0, 90, '%', 1],[81.0, 60, 'mV', 1],[28.0, 3, 'CTE', 1],[62.0, 3, 'CTE', 1],[119.0, 20, '%', 3]

NF
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190885, 190886)
 We then demonstrate NFA systems where T<missing VAR>1formation is suppressed.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 18, '%', 7],[356.0, 20, '%', 6],[157.0, 90, '%', 3],[152.0, 60, 'mV', 3],[43.0, 3, 'CTE', 1],[9.0, 3, 'CTE', 1],[47.0, 20, '%', 1]

OSC
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190925, 190927)
 This work therefore provides a clear design pathwayfor improved OSC performance to 20% PCE<missing VAR> and beyond.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[430.0, 18, '%', 8],[396.0, 20, '%', 7],[197.0, 90, '%', 4],[192.0, 60, 'mV', 4],[83.0, 3, 'CTE', 2],[49.0, 3, 'CTE', 2],[6.0, 20, '%', 0]

PC
###The role of charge recombination to spin-triplet excitons in non-fullerene acceptor organic solar cells|Alexander J. Gillett,Alberto Privitera,Rishat Dilmurat,Akchheta Karki,Deping Qian,Anton Pershin,Giacomo Londi,William K. Myers,Jaewon Lee,Jun Yuan,Seo-Jin Ko,Moritz K. Riede,Feng Gao,Guillermo C. Bazan,Akshay Rao,Thuc-Quyen Nguyen,David Beljonne,Richard H. Friend###
(190936, 190937)
 This work therefore provides a clear design pathwayfor improved OSC performance to 20% PCE<missing VAR> and beyond.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[441.0, 18, '%', 8],[407.0, 20, '%', 7],[208.0, 90, '%', 4],[203.0, 60, 'mV', 4],[94.0, 3, 'CTE', 2],[60.0, 3, 'CTE', 2],[3.0, 20, '%', 0]

In2S3
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(190979, 190982)
Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 18.45, '%', 5],[378.0, 19.32, '%', 5]

CuSCN
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(190992, 190995)
Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 18.45, '%', 5],[365.0, 19.32, '%', 5]

O
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191001, 191001)
Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 18.45, '%', 5],[359.0, 19.32, '%', 5]

SC
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191024, 191025)
 SCAPS 1-D<missing VAR> was used for the simulation of lead-free environmentally benignmethylammonium tin-iodide (CH3NH3SnI3) based solar cell.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 18.45, '%', 4],[335.0, 19.32, '%', 4]

PS
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191027, 191028)
 SCAPS 1-D<missing VAR> was used for the simulation of lead-free environmentally benignmethylammonium tin-iodide (CH3NH3SnI3) based solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 18.45, '%', 4],[332.0, 19.32, '%', 4]

(CH3NH3SnI3)
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191061, 191071)
 SCAPS 1-D<missing VAR> was used for the simulation of lead-free environmentally benignmethylammonium tin-iodide (CH3NH3SnI3) based solar cell.
Featurization successful!
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 18.45, '%', 4],[289.0, 19.32, '%', 4]

(In2S3)
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191085, 191090)
 Indium sulphide(In2S3) was utilized as the electron transport layer (ETL) for its high carriermobility and optimized band structure, unlike traditional titanium oxide (TiO2)ETL.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 18.45, '%', 3],[270.0, 19.32, '%', 3]

(TiO2)
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191140, 191144)
 Indium sulphide(In2S3) was utilized as the electron transport layer (ETL) for its high carriermobility and optimized band structure, unlike traditional titanium oxide (TiO2)ETL.
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 18.45, '%', 3],[216.0, 19.32, '%', 3]

O
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191158, 191158)
 Traditional expensive spiro-OMeTAD (C81H68N4O8) and cheaper cuprousthiocyanate (CuSCN) were utilized alternatively as hole transport layer (HTL)to observe the effect of different HTL on cell performance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 18.45, '%', 2],[202.0, 19.32, '%', 2]

(C81H68N4O8)
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191164, 191173)
 Traditional expensive spiro-OMeTAD (C81H68N4O8) and cheaper cuprousthiocyanate (CuSCN) were utilized alternatively as hole transport layer (HTL)to observe the effect of different HTL on cell performance.
Featurization successful!
0.422360248447205,0,0,0,0,0.5031055900621118,0.024844720496894408,0.049689440993788817,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 18.45, '%', 2],[187.0, 19.32, '%', 2]

(CuSCN)
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191184, 191189)
 Traditional expensive spiro-OMeTAD (C81H68N4O8) and cheaper cuprousthiocyanate (CuSCN) were utilized alternatively as hole transport layer (HTL)to observe the effect of different HTL on cell performance.
Featurization successful!
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 18.45, '%', 2],[171.0, 19.32, '%', 2]

H
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191206, 191206)
 Traditional expensive spiro-OMeTAD (C81H68N4O8) and cheaper cuprousthiocyanate (CuSCN) were utilized alternatively as hole transport layer (HTL)to observe the effect of different HTL on cell performance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 18.45, '%', 2],[154.0, 19.32, '%', 2]

H
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191224, 191224)
 Traditional expensive spiro-OMeTAD (C81H68N4O8) and cheaper cuprousthiocyanate (CuSCN) were utilized alternatively as hole transport layer (HTL)to observe the effect of different HTL on cell performance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 18.45, '%', 2],[136.0, 19.32, '%', 2]

(VB)
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191273, 191276)
 We investigated thetrend in electrical measurements by altering parameters such as thickness,defect density, valence band (VB) effective density of state and bandgap of theabsorber layer, interfacial trap densities and defect density of ETL.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 18.45, '%', 1],[84.0, 19.32, '%', 1]

At
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191319, 191319)
 Atoptimum condition, the device revealed the highest efficiency of 18.45% forCuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 18.45, '%', 0],[41.0, 19.32, '%', 0]

CuSCN
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191347, 191350)
 Atoptimum condition, the device revealed the highest efficiency of 18.45% forCuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 18.45, '%', 0],[10.0, 19.32, '%', 0]

H
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191353, 191353)
 Atoptimum condition, the device revealed the highest efficiency of 18.45% forCuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 18.45, '%', 0],[7.0, 19.32, '%', 0]

O
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191367, 191367)
 Atoptimum condition, the device revealed the highest efficiency of 18.45% forCuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 18.45, '%', 0],[7.0, 19.32, '%', 0]

H
###Effect of Different Device Parameters on Tin Based Perovskite Solar Cell Coupled with In2S3 Electron Transport Layer and CuSCN and Spiro-OMeTAD Alternative Hole Transport Layers for High Efficiency Performance|Intekhab Alam,Md Ali Ashraf###
(191374, 191374)
 Atoptimum condition, the device revealed the highest efficiency of 18.45% forCuSCN (HTL) and 19.32% for spiro-OMeTAD (HTL) configuration.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 18.45, '%', 0],[14.0, 19.32, '%', 0]

Si/CdTe
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191579, 191582)
Usually, covalent/polar semiconductors with prototype of Si/CdTe crystalsexhibit great structural stability owing to their compactly composedtetrahedral building blocks, but present extremely poor defect-tolerance due tothe similar electronegativity of component elements.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Hg
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191775, 191775)
 Combining the stable framework of covalent semiconductors and benigndefects of ionic compounds, we find that HgX<missing VAR>2S4 (X<missing VAR>In, Sc and Y) spinelsemiconductors possess both the merits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S4
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191778, 191779)
 Combining the stable framework of covalent semiconductors and benigndefects of ionic compounds, we find that HgX<missing VAR>2S4 (X<missing VAR>In, Sc and Y) spinelsemiconductors possess both the merits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191783, 191783)
 Combining the stable framework of covalent semiconductors and benigndefects of ionic compounds, we find that HgX<missing VAR>2S4 (X<missing VAR>In, Sc and Y) spinelsemiconductors possess both the merits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sc
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191786, 191786)
 Combining the stable framework of covalent semiconductors and benigndefects of ionic compounds, we find that HgX<missing VAR>2S4 (X<missing VAR>In, Sc and Y) spinelsemiconductors possess both the merits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191790, 191790)
 Combining the stable framework of covalent semiconductors and benigndefects of ionic compounds, we find that HgX<missing VAR>2S4 (X<missing VAR>In, Sc and Y) spinelsemiconductors possess both the merits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191857, 191857)
 The tightly combined tetrahedral andoctahedral blocks ensures the structural stability, and the band edge of ioniccharacteristic, which is mainly dominated by Hg-6s<missing VAR> and S-3p<missing VAR> orbitals forconduction band minimum (CBM) and valence band maximum (VBM), respectively,makes HgX<missing VAR>2S4 defect-tolerant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191864, 191864)
 The tightly combined tetrahedral andoctahedral blocks ensures the structural stability, and the band edge of ioniccharacteristic, which is mainly dominated by Hg-6s<missing VAR> and S-3p<missing VAR> orbitals forconduction band minimum (CBM) and valence band maximum (VBM), respectively,makes HgX<missing VAR>2S4 defect-tolerant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CB
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191881, 191882)
 The tightly combined tetrahedral andoctahedral blocks ensures the structural stability, and the band edge of ioniccharacteristic, which is mainly dominated by Hg-6s<missing VAR> and S-3p<missing VAR> orbitals forconduction band minimum (CBM) and valence band maximum (VBM), respectively,makes HgX<missing VAR>2S4 defect-tolerant.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VB
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191895, 191896)
 The tightly combined tetrahedral andoctahedral blocks ensures the structural stability, and the band edge of ioniccharacteristic, which is mainly dominated by Hg-6s<missing VAR> and S-3p<missing VAR> orbitals forconduction band minimum (CBM) and valence band maximum (VBM), respectively,makes HgX<missing VAR>2S4 defect-tolerant.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191907, 191907)
 The tightly combined tetrahedral andoctahedral blocks ensures the structural stability, and the band edge of ioniccharacteristic, which is mainly dominated by Hg-6s<missing VAR> and S-3p<missing VAR> orbitals forconduction band minimum (CBM) and valence band maximum (VBM), respectively,makes HgX<missing VAR>2S4 defect-tolerant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S4
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191910, 191911)
 The tightly combined tetrahedral andoctahedral blocks ensures the structural stability, and the band edge of ioniccharacteristic, which is mainly dominated by Hg-6s<missing VAR> and S-3p<missing VAR> orbitals forconduction band minimum (CBM) and valence band maximum (VBM), respectively,makes HgX<missing VAR>2S4 defect-tolerant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CB
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191928, 191929)
 The prominent downward bending of CBM<missing VAR> caused byspatially spreading Hg-6s<missing VAR> spherical orbital not only induces a suitable opticalband gap which is often too large in ionic compounds, but also promotes theformation and transport of n<missing VAR>-type carriers.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(191941, 191941)
 The prominent downward bending of CBM<missing VAR> caused byspatially spreading Hg-6s<missing VAR> spherical orbital not only induces a suitable opticalband gap which is often too large in ionic compounds, but also promotes theformation and transport of n<missing VAR>-type carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg
###Structural Stability and Defect-Tolerance of Ionic Spinel Semiconductor for High-Efficiency Solar Cells|Hanzhen Liang,Huiwen Xiang,Rui Zhu,Chengyan Liu,Yu Jia###
(192016, 192016)
 This study presents that Hg-basedchalcogenide spinels are promising candidates for high-efficiency solar cells,and suggests that adopting cations with delocalized orbitals under theframework of spinel crystal is an alternative way for synthesizing the stableand defect-tolerant photovoltaic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Influence of local surface defects on the minority-carrier lifetime of passivating-contact solar cells|Jean Cattin,Jan Haschke,Christophe Ballif,Matthieu Boccard###
(192235, 192235)
 Minor passivation drops limit the functioning of solar cells,however, they are not detected in devices with open-circuit voltages below 700m<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of local surface defects on the minority-carrier lifetime of passivating-contact solar cells|Jean Cattin,Jan Haschke,Christophe Ballif,Matthieu Boccard###
(192238, 192238)
 In this work, simulations and experiments were used to show the effect oflocalized surface defects on the overall device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs0.05F
###Local Nanoscale Defective Phase Impurities Are the Sites of Degradation in Halide Perovskite Devices|Stuart Macpherson,Tiarnan A. S. Doherty,Andrew J. Winchester,Sofiia Kosar,Duncan N. Johnstone,Yu-Hsien Chiang,Krzystof Galkowski,Miguel Anaya,Kyle Frohna,Affan N. Iqbal,Bart Roose,Zahra Andaji-Garmaroudi,Paul A. Midgley,Keshav M. Dani,Samuel D. Stranks###
(192782, 192784)
 Recently, we reported that performance-limiting deepsub-bandgap states appear in nanoscale clusters at particular grain boundariesin state-of-the-art Cs0.05FA0.78M<missing VAR>A0.17Pb(I0.83Br0.17)3(M<missing VAR>Amethylammonium, FAformamidinium) perovskite films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.9523809523809523,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 25.5, '%', 2],[137.0, 29.5, '%', 2]

Pb(I0.83Br0.17)3
###Local Nanoscale Defective Phase Impurities Are the Sites of Degradation in Halide Perovskite Devices|Stuart Macpherson,Tiarnan A. S. Doherty,Andrew J. Winchester,Sofiia Kosar,Duncan N. Johnstone,Yu-Hsien Chiang,Krzystof Galkowski,Miguel Anaya,Kyle Frohna,Affan N. Iqbal,Bart Roose,Zahra Andaji-Garmaroudi,Paul A. Midgley,Keshav M. Dani,Samuel D. Stranks###
(192790, 192797)
 Recently, we reported that performance-limiting deepsub-bandgap states appear in nanoscale clusters at particular grain boundariesin state-of-the-art Cs0.05FA0.78M<missing VAR>A0.17Pb(I0.83Br0.17)3(M<missing VAR>Amethylammonium, FAformamidinium) perovskite films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1275,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6224999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 25.5, '%', 2],[145.0, 29.5, '%', 2]

F
###Local Nanoscale Defective Phase Impurities Are the Sites of Degradation in Halide Perovskite Devices|Stuart Macpherson,Tiarnan A. S. Doherty,Andrew J. Winchester,Sofiia Kosar,Duncan N. Johnstone,Yu-Hsien Chiang,Krzystof Galkowski,Miguel Anaya,Kyle Frohna,Affan N. Iqbal,Bart Roose,Zahra Andaji-Garmaroudi,Paul A. Midgley,Keshav M. Dani,Samuel D. Stranks###
(192806, 192806)
 Recently, we reported that performance-limiting deepsub-bandgap states appear in nanoscale clusters at particular grain boundariesin state-of-the-art Cs0.05FA0.78M<missing VAR>A0.17Pb(I0.83Br0.17)3(M<missing VAR>Amethylammonium, FAformamidinium) perovskite films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 25.5, '%', 2],[161.0, 29.5, '%', 2]

F
###Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study|Eduardo Menéndez-Proupin,Shivani Grover,Ana L. Montero-Alejo,Scott D. Midgley,Keith T. Butler,Ricardo Grau-Crespo###
(193186, 193186)
Mixed-anion mixed-cation perovskite (FAPbI3)0.875(M<missing VAR>APbBr3)0.125 an ab-initio molecular dynamics study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study|Eduardo Menéndez-Proupin,Shivani Grover,Ana L. Montero-Alejo,Scott D. Midgley,Keith T. Butler,Ricardo Grau-Crespo###
(193189, 193190)
Mixed-anion mixed-cation perovskite (FAPbI3)0.875(M<missing VAR>APbBr3)0.125 an ab-initio molecular dynamics study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br3
###Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study|Eduardo Menéndez-Proupin,Shivani Grover,Ana L. Montero-Alejo,Scott D. Midgley,Keith T. Butler,Ricardo Grau-Crespo###
(193197, 193198)
Mixed-anion mixed-cation perovskite (FAPbI3)0.875(M<missing VAR>APbBr3)0.125 an ab-initio molecular dynamics study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study|Eduardo Menéndez-Proupin,Shivani Grover,Ana L. Montero-Alejo,Scott D. Midgley,Keith T. Butler,Ricardo Grau-Crespo###
(193228, 193228)
 Mixed-anion mixed-cation perovskites with (FAPbI3)1-x(MAPbBr3)x<missing VAR>composition have allowed record efficiencies in photovoltaic solar cells, buttheir atomic-scale behaviour is not well understood yet, in part because theirtheoretical modelling requires consideration of complex and interrelateddynamic and disordering effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study|Eduardo Menéndez-Proupin,Shivani Grover,Ana L. Montero-Alejo,Scott D. Midgley,Keith T. Butler,Ricardo Grau-Crespo###
(193231, 193232)
 Mixed-anion mixed-cation perovskites with (FAPbI3)1-x(MAPbBr3)x<missing VAR>composition have allowed record efficiencies in photovoltaic solar cells, buttheir atomic-scale behaviour is not well understood yet, in part because theirtheoretical modelling requires consideration of complex and interrelateddynamic and disordering effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br3
###Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study|Eduardo Menéndez-Proupin,Shivani Grover,Ana L. Montero-Alejo,Scott D. Midgley,Keith T. Butler,Ricardo Grau-Crespo###
(193241, 193242)
 Mixed-anion mixed-cation perovskites with (FAPbI3)1-x(MAPbBr3)x<missing VAR>composition have allowed record efficiencies in photovoltaic solar cells, buttheir atomic-scale behaviour is not well understood yet, in part because theirtheoretical modelling requires consideration of complex and interrelateddynamic and disordering effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study|Eduardo Menéndez-Proupin,Shivani Grover,Ana L. Montero-Alejo,Scott D. Midgley,Keith T. Butler,Ricardo Grau-Crespo###
(193364, 193364)
 We present here an ab initio moleculardynamics investigation of the structural, thermodynamic, and electronicproperties of the (FAPbI3)0.875(M<missing VAR>APbBr3)0.125 perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study|Eduardo Menéndez-Proupin,Shivani Grover,Ana L. Montero-Alejo,Scott D. Midgley,Keith T. Butler,Ricardo Grau-Crespo###
(193367, 193368)
 We present here an ab initio moleculardynamics investigation of the structural, thermodynamic, and electronicproperties of the (FAPbI3)0.875(M<missing VAR>APbBr3)0.125 perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br3
###Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study|Eduardo Menéndez-Proupin,Shivani Grover,Ana L. Montero-Alejo,Scott D. Midgley,Keith T. Butler,Ricardo Grau-Crespo###
(193375, 193376)
 We present here an ab initio moleculardynamics investigation of the structural, thermodynamic, and electronicproperties of the (FAPbI3)0.875(M<missing VAR>APbBr3)0.125 perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193703, 193703)
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2 Systematic approach to achieve over 14% power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 14, '%', 0],[383.0, 0.27, 'is', 7],[486.0, 943, 'mV', 8]

Mg
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193705, 193705)
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2 Systematic approach to achieve over 14% power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 14, '%', 0],[381.0, 0.27, 'is', 7],[484.0, 943, 'mV', 8]

O
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193707, 193707)
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2 Systematic approach to achieve over 14% power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 14, '%', 0],[379.0, 0.27, 'is', 7],[482.0, 943, 'mV', 8]

Cu
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193713, 193713)
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2 Systematic approach to achieve over 14% power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 14, '%', 0],[373.0, 0.27, 'is', 7],[476.0, 943, 'mV', 8]

In
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193715, 193715)
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2 Systematic approach to achieve over 14% power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 14, '%', 0],[371.0, 0.27, 'is', 7],[474.0, 943, 'mV', 8]

Ga
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193717, 193717)
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2 Systematic approach to achieve over 14% power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 14, '%', 0],[369.0, 0.27, 'is', 7],[472.0, 943, 'mV', 8]

S2
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193719, 193720)
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2 Systematic approach to achieve over 14% power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 14, '%', 0],[366.0, 0.27, 'is', 7],[469.0, 943, 'mV', 8]

CdS
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193744, 193745)
 Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 14, '%', 1],[341.0, 0.27, 'is', 6],[444.0, 943, 'mV', 7]

Cu
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193757, 193757)
 Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 14, '%', 1],[329.0, 0.27, 'is', 6],[432.0, 943, 'mV', 7]

In
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193759, 193759)
 Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 14, '%', 1],[327.0, 0.27, 'is', 6],[430.0, 943, 'mV', 7]

Ga
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193761, 193761)
 Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 14, '%', 1],[325.0, 0.27, 'is', 6],[428.0, 943, 'mV', 7]

S2
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193763, 193764)
 Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 14, '%', 1],[322.0, 0.27, 'is', 6],[425.0, 943, 'mV', 7]

Cu
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193802, 193802)
 Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 14, '%', 1],[284.0, 0.27, 'is', 6],[387.0, 943, 'mV', 7]

In
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193804, 193804)
 Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 14, '%', 1],[282.0, 0.27, 'is', 6],[385.0, 943, 'mV', 7]

Ga
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193806, 193806)
 Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 14, '%', 1],[280.0, 0.27, 'is', 6],[383.0, 943, 'mV', 7]

S2/CdS
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193808, 193812)
 Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leadsto reduced open-circuit voltage because of a negative conduction band offset atthe Cu(In,Ga)S2/CdS interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[76.0, 14, '%', 1],[274.0, 0.27, 'is', 6],[377.0, 943, 'mV', 7]

CdS
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193832, 193833)
 Reducing this loss necessitates the substitutionof CdS by an alternative buffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 14, '%', 2],[253.0, 0.27, 'is', 5],[356.0, 943, 'mV', 6]

ZnO
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193899, 193900)
 However, the substitute buffer layer mayintroduce electrical barriers in the device due to unfavorable band alignmentat the other interfaces such as between buffer/ZnO i<missing VAR>-layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 14, '%', 3],[186.0, 0.27, 'is', 4],[289.0, 943, 'mV', 5]

Cu
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193933, 193933)
 This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i<missing VAR>-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 14, '%', 4],[153.0, 0.27, 'is', 3],[256.0, 943, 'mV', 4]

In
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193935, 193935)
 This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i<missing VAR>-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 14, '%', 4],[151.0, 0.27, 'is', 3],[254.0, 943, 'mV', 4]

Ga
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193937, 193937)
 This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i<missing VAR>-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 14, '%', 4],[149.0, 0.27, 'is', 3],[252.0, 943, 'mV', 4]

S2
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193939, 193940)
 This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i<missing VAR>-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 14, '%', 4],[146.0, 0.27, 'is', 3],[249.0, 943, 'mV', 4]

Zn1-x
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193954, 193957)
 This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i<missing VAR>-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[222.0, 14, '%', 4],[129.0, 0.27, 'is', 3],[232.0, 943, 'mV', 4]

O
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193959, 193959)
 This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i<missing VAR>-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 14, '%', 4],[127.0, 0.27, 'is', 3],[230.0, 943, 'mV', 4]

Al
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193963, 193963)
 This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i<missing VAR>-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 14, '%', 4],[123.0, 0.27, 'is', 3],[226.0, 943, 'mV', 4]

Zn1-x
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193967, 193970)
 This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i<missing VAR>-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[235.0, 14, '%', 4],[116.0, 0.27, 'is', 3],[219.0, 943, 'mV', 4]

O
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(193972, 193972)
 This study aims toreduce interface recombinations and eliminate electrical barriers inCu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxObuffer and i<missing VAR>-layer combination deposited using atomic layer deposition andmagnetron sputtering, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 14, '%', 4],[114.0, 0.27, 'is', 3],[217.0, 943, 'mV', 4]

Zn1
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194077, 194078)
 An optimal composition of Zn1 x<missing VAR>MgxO x<missing VAR>  0.27 isidentified for a suitable conduction band alignment with Cu(In,Ga)S2 with abandgap of 1.6 e<missing VAR>V, suppressing interface recombination and avoiding barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 14, '%', 7],[8.0, 0.27, 'is', 0],[111.0, 943, 'mV', 1]

O
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194082, 194082)
 An optimal composition of Zn1 x<missing VAR>MgxO x<missing VAR>  0.27 isidentified for a suitable conduction band alignment with Cu(In,Ga)S2 with abandgap of 1.6 e<missing VAR>V, suppressing interface recombination and avoiding barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 14, '%', 7],[4.0, 0.27, 'is', 0],[107.0, 943, 'mV', 1]

Cu
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194105, 194105)
 An optimal composition of Zn1 x<missing VAR>MgxO x<missing VAR>  0.27 isidentified for a suitable conduction band alignment with Cu(In,Ga)S2 with abandgap of 1.6 e<missing VAR>V, suppressing interface recombination and avoiding barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 14, '%', 7],[19.0, 0.27, 'is', 0],[84.0, 943, 'mV', 1]

In
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194107, 194107)
 An optimal composition of Zn1 x<missing VAR>MgxO x<missing VAR>  0.27 isidentified for a suitable conduction band alignment with Cu(In,Ga)S2 with abandgap of 1.6 e<missing VAR>V, suppressing interface recombination and avoiding barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 14, '%', 7],[21.0, 0.27, 'is', 0],[82.0, 943, 'mV', 1]

Ga
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194109, 194109)
 An optimal composition of Zn1 x<missing VAR>MgxO x<missing VAR>  0.27 isidentified for a suitable conduction band alignment with Cu(In,Ga)S2 with abandgap of 1.6 e<missing VAR>V, suppressing interface recombination and avoiding barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 14, '%', 7],[23.0, 0.27, 'is', 0],[80.0, 943, 'mV', 1]

S2
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194111, 194112)
 An optimal composition of Zn1 x<missing VAR>MgxO x<missing VAR>  0.27 isidentified for a suitable conduction band alignment with Cu(In,Ga)S2 with abandgap of 1.6 e<missing VAR>V, suppressing interface recombination and avoiding barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 14, '%', 7],[25.0, 0.27, 'is', 0],[77.0, 943, 'mV', 1]

V
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194126, 194126)
 An optimal composition of Zn1 x<missing VAR>MgxO x<missing VAR>  0.27 isidentified for a suitable conduction band alignment with Cu(In,Ga)S2 with abandgap of 1.6 e<missing VAR>V, suppressing interface recombination and avoiding barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 14, '%', 7],[40.0, 0.27, 'is', 0],[63.0, 943, 'mV', 1]

ZnO
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194211, 194212)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[479.0, 14, '%', 9],[125.0, 0.27, 'is', 2],[22.0, 943, 'mV', 1]

Al
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194216, 194216)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[484.0, 14, '%', 9],[130.0, 0.27, 'is', 2],[27.0, 943, 'mV', 1]

Zn
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194218, 194218)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[486.0, 14, '%', 9],[132.0, 0.27, 'is', 2],[29.0, 943, 'mV', 1]

Mg
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194220, 194220)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[488.0, 14, '%', 9],[134.0, 0.27, 'is', 2],[31.0, 943, 'mV', 1]

O
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194222, 194222)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[490.0, 14, '%', 9],[136.0, 0.27, 'is', 2],[33.0, 943, 'mV', 1]

ZnO
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194237, 194238)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[505.0, 14, '%', 9],[151.0, 0.27, 'is', 2],[48.0, 943, 'mV', 1]

Al
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194246, 194246)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[514.0, 14, '%', 9],[160.0, 0.27, 'is', 2],[57.0, 943, 'mV', 1]

Zn
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194248, 194248)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[516.0, 14, '%', 9],[162.0, 0.27, 'is', 2],[59.0, 943, 'mV', 1]

Mg
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194250, 194250)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[518.0, 14, '%', 9],[164.0, 0.27, 'is', 2],[61.0, 943, 'mV', 1]

O
###Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency|Mohit Sood,Poorani Gnanasambandan,Damilola Adeleye,Sudhanshu Shukla,Noureddine Adjeroud,Renaud Leturcq,Susanne Siebentritt###
(194252, 194252)
 A comparison ofoptoelectronic measurements for devices prepared with ZnO and Al(Zn,Mg)O showsthe necessity to replace the ZnO i<missing VAR>-layer with Al(Zn,Mg)O i<missing VAR>-layer for ahigh-efficiency device.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[520.0, 14, '%', 9],[166.0, 0.27, 'is', 2],[63.0, 943, 'mV', 1]

VOC
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194298, 194300)
High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 1.77, 'eV', 3],[367.0, 1.29, 'V', 4],[416.0, 22.6, '%', 5],[440.0, 23.8, '%', 6],[465.0, 2.1, 'V', 6],[491.0, 28, '%', 6]

Cs
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194334, 194334)
 Among various types of perovskite-based tandem solar cells (T<missing VAR>SCs),all-perovskite T<missing VAR>SCs are of particular attractiveness for building- andvehicle-integrated photovoltaics, or space energy areas as they can befabricated on flexible and lightweight substrates with a very highpower-to-weight ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 1.77, 'eV', 2],[333.0, 1.29, 'V', 3],[382.0, 22.6, '%', 4],[406.0, 23.8, '%', 5],[431.0, 2.1, 'V', 5],[457.0, 28, '%', 5]

SCs
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194344, 194345)
 Among various types of perovskite-based tandem solar cells (T<missing VAR>SCs),all-perovskite T<missing VAR>SCs are of particular attractiveness for building- andvehicle-integrated photovoltaics, or space energy areas as they can befabricated on flexible and lightweight substrates with a very highpower-to-weight ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 1.77, 'eV', 2],[322.0, 1.29, 'V', 3],[371.0, 22.6, '%', 4],[395.0, 23.8, '%', 5],[420.0, 2.1, 'V', 5],[446.0, 28, '%', 5]

WB
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194471, 194472)
 However, the efficiency of flexible all-perovskitetandems is lagging far behind their rigid counterparts primarily due to thechallenges in developing efficient wide-bandgap (WBG) perovskite solar cells onthe flexible substrates as well as the low open-circuit voltage (VOC) in theWBG<missing VAR> perovskite subcell.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1.77, 'eV', 1],[195.0, 1.29, 'V', 2],[244.0, 22.6, '%', 3],[268.0, 23.8, '%', 4],[293.0, 2.1, 'V', 4],[319.0, 28, '%', 4]

(VOC)
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194507, 194511)
 However, the efficiency of flexible all-perovskitetandems is lagging far behind their rigid counterparts primarily due to thechallenges in developing efficient wide-bandgap (WBG) perovskite solar cells onthe flexible substrates as well as the low open-circuit voltage (VOC) in theWBG<missing VAR> perovskite subcell.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 1.77, 'eV', 1],[156.0, 1.29, 'V', 2],[205.0, 22.6, '%', 3],[229.0, 23.8, '%', 4],[254.0, 2.1, 'V', 4],[280.0, 28, '%', 4]

WB
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194518, 194519)
 However, the efficiency of flexible all-perovskitetandems is lagging far behind their rigid counterparts primarily due to thechallenges in developing efficient wide-bandgap (WBG) perovskite solar cells onthe flexible substrates as well as the low open-circuit voltage (VOC) in theWBG<missing VAR> perovskite subcell.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1.77, 'eV', 1],[148.0, 1.29, 'V', 2],[197.0, 22.6, '%', 3],[221.0, 23.8, '%', 4],[246.0, 2.1, 'V', 4],[272.0, 28, '%', 4]

WB
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194585, 194586)
 Here, we report that the use of self-assembledmonolayers as hole-selective contact effectively suppresses the interfacialrecombination and allows the subsequent uniform growth of a 1.77 eV WBG<missing VAR>perovskite with superior optoelectronic quality.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1.77, 'eV', 0],[81.0, 1.29, 'V', 1],[130.0, 22.6, '%', 2],[154.0, 23.8, '%', 3],[179.0, 2.1, 'V', 3],[205.0, 28, '%', 3]

In
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194601, 194601)
 In addition, we employ apost-deposition treatment with 2-thiopheneethylammonium chloride to furthersuppress the bulk and interfacial recombination, boosting the VOC of the WBG<missing VAR>top cell to 1.29 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1.77, 'eV', 1],[66.0, 1.29, 'V', 0],[115.0, 22.6, '%', 1],[139.0, 23.8, '%', 2],[164.0, 2.1, 'V', 2],[190.0, 28, '%', 2]

VOC
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194649, 194651)
 In addition, we employ apost-deposition treatment with 2-thiopheneethylammonium chloride to furthersuppress the bulk and interfacial recombination, boosting the VOC of the WBG<missing VAR>top cell to 1.29 V.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1.77, 'eV', 1],[16.0, 1.29, 'V', 0],[65.0, 22.6, '%', 1],[89.0, 23.8, '%', 2],[114.0, 2.1, 'V', 2],[140.0, 28, '%', 2]

WB
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194657, 194658)
 In addition, we employ apost-deposition treatment with 2-thiopheneethylammonium chloride to furthersuppress the bulk and interfacial recombination, boosting the VOC of the WBG<missing VAR>top cell to 1.29 V.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 1.77, 'eV', 1],[9.0, 1.29, 'V', 0],[58.0, 22.6, '%', 1],[82.0, 23.8, '%', 2],[107.0, 2.1, 'V', 2],[133.0, 28, '%', 2]

SC
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194703, 194704)
 Based on this, we present the first proof-of-conceptfour-terminal all-perovskite flexible T<missing VAR>SC with a PCE<missing VAR> of 22.6%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 1.77, 'eV', 2],[36.0, 1.29, 'V', 1],[12.0, 22.6, '%', 0],[36.0, 23.8, '%', 1],[61.0, 2.1, 'V', 1],[87.0, 28, '%', 1]

PC
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194710, 194711)
 Based on this, we present the first proof-of-conceptfour-terminal all-perovskite flexible T<missing VAR>SC with a PCE<missing VAR> of 22.6%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1.77, 'eV', 2],[43.0, 1.29, 'V', 1],[5.0, 22.6, '%', 0],[29.0, 23.8, '%', 1],[54.0, 2.1, 'V', 1],[80.0, 28, '%', 1]

SCs
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194751, 194752)
 When integratinginto two-terminal flexible tandems, we achieved 23.8% flexible all-perovskiteT<missing VAR>SCs with a superior VOC of 2.1 V, which is on par with the VOC reported on the28% all-perovskite tandems grown on the rigid substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1.77, 'eV', 3],[84.0, 1.29, 'V', 2],[35.0, 22.6, '%', 1],[11.0, 23.8, '%', 0],[13.0, 2.1, 'V', 0],[39.0, 28, '%', 0]

VOC
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194760, 194762)
 When integratinginto two-terminal flexible tandems, we achieved 23.8% flexible all-perovskiteT<missing VAR>SCs with a superior VOC of 2.1 V, which is on par with the VOC reported on the28% all-perovskite tandems grown on the rigid substrate.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 1.77, 'eV', 3],[93.0, 1.29, 'V', 2],[44.0, 22.6, '%', 1],[20.0, 23.8, '%', 0],[3.0, 2.1, 'V', 0],[29.0, 28, '%', 0]

VOC
###High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell|Huagui Lai,Jincheng Luo,Yannick Zwirner,Selina Olthof,Alexander Wieczorek,Fangyuan Ye,Quentin Jeangros,Xinxing Yin,Fatima Akhundova,Tianshu Ma,Rui He,Radha K. Kothandaraman,Xinyu Chin,Evgeniia Gilshtein,André Müller,Changlei Wang,Jarla Thiesbrummel,Sebastian Siol,José Márquez Prieto,Thomas Unold,Martin Stolterfoht,Cong Chen,Ayodhya N. Tiwari,Dewei Zhao,Fan Fu###
(194780, 194782)
 When integratinginto two-terminal flexible tandems, we achieved 23.8% flexible all-perovskiteT<missing VAR>SCs with a superior VOC of 2.1 V, which is on par with the VOC reported on the28% all-perovskite tandems grown on the rigid substrate.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 1.77, 'eV', 3],[113.0, 1.29, 'V', 2],[64.0, 22.6, '%', 1],[40.0, 23.8, '%', 0],[15.0, 2.1, 'V', 0],[9.0, 28, '%', 0]

In
###Radiative coupling the easy way: Using transfer coefficients to model series-connected multi-junction solar cells|Rune Strandberg###
(194910, 194910)
 In this work it is shown how this radiativecoupling can be accounted for in series connected multi-junction solar cells byconstants called transfer coefficients.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Radiative coupling the easy way: Using transfer coefficients to model series-connected multi-junction solar cells|Rune Strandberg###
(195163, 195163)
 In addition, the model is used to find the efficiency peaks ofradiatively coupled multi-junction cells when illuminated by the AM<missing VAR>1.5spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Steric engineering of point defects in lead halide perovskites|Lucy D. Whalley###
(195305, 195305)
 The most stable and efficient ABX<missing VAR>3 perovskite solar cellsemploy mixed A-site cations, however the impact of cation mixing on carriertrapping and recombination -- key processes that limit photovoltaic performance-- is not fully understood.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Steric engineering of point defects in lead halide perovskites|Lucy D. Whalley###
(195416, 195418)
 Here we analyse non-radiative carrier trapping inthe mixed A-cation hybrid halide perovskite M<missing VAR>A1-xCsxPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering|Ugur D. Menda,Guilherme Ribeiro,Jonas Deuermeier,Esther López,Daniela Nunes,Santanu Jana,Irene Artacho,Rodrigo Martins,Iván Mora-Seró,Manuel J. Mendes,Iñigo Ramiro###
(195751, 195751)
Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 50, '%', 1],[416.0, 204, 'meV', 6]

(IBSCs)
###Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering|Ugur D. Menda,Guilherme Ribeiro,Jonas Deuermeier,Esther López,Daniela Nunes,Santanu Jana,Irene Artacho,Rodrigo Martins,Iván Mora-Seró,Manuel J. Mendes,Iñigo Ramiro###
(195798, 195803)
 By harvesting a wider range of the solar spectrum, intermediate band solarcells (IBSCs) can achieve efficiencies 50% higher than conventionalsingle-junction solar cells.
Featurization successful!
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 50, '%', 0],[364.0, 204, 'meV', 5]

(IB)
###Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering|Ugur D. Menda,Guilherme Ribeiro,Jonas Deuermeier,Esther López,Daniela Nunes,Santanu Jana,Irene Artacho,Rodrigo Martins,Iván Mora-Seró,Manuel J. Mendes,Iñigo Ramiro###
(195881, 195884)
 For this, additional requirements are imposed tothe light-absorbing semiconductor, which must contain a collection of in-gaplevels, called intermediate band (IB), optically coupled to but thermallydecoupled from the valence and conduction bands (VB and CB).
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 50, '%', 1],[283.0, 204, 'meV', 4]

VB
###Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering|Ugur D. Menda,Guilherme Ribeiro,Jonas Deuermeier,Esther López,Daniela Nunes,Santanu Jana,Irene Artacho,Rodrigo Martins,Iván Mora-Seró,Manuel J. Mendes,Iñigo Ramiro###
(195913, 195914)
 For this, additional requirements are imposed tothe light-absorbing semiconductor, which must contain a collection of in-gaplevels, called intermediate band (IB), optically coupled to but thermallydecoupled from the valence and conduction bands (VB and CB).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 50, '%', 1],[253.0, 204, 'meV', 4]

B
###Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering|Ugur D. Menda,Guilherme Ribeiro,Jonas Deuermeier,Esther López,Daniela Nunes,Santanu Jana,Irene Artacho,Rodrigo Martins,Iván Mora-Seró,Manuel J. Mendes,Iñigo Ramiro###
(195919, 195919)
 For this, additional requirements are imposed tothe light-absorbing semiconductor, which must contain a collection of in-gaplevels, called intermediate band (IB), optically coupled to but thermallydecoupled from the valence and conduction bands (VB and CB).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 50, '%', 1],[248.0, 204, 'meV', 4]

P
###Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering|Ugur D. Menda,Guilherme Ribeiro,Jonas Deuermeier,Esther López,Daniela Nunes,Santanu Jana,Irene Artacho,Rodrigo Martins,Iván Mora-Seró,Manuel J. Mendes,Iñigo Ramiro###
(195935, 195935)
Quantum-dot-in-perovskite (Q<missing VAR>DiP) solids, where inorganic quantum dots (Q<missing VAR>Ds) areembedded in a halide perovskite matrix, have been recently suggested as apromising material platform for developing IBSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 50, '%', 2],[232.0, 204, 'meV', 3]

Ds
###Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering|Ugur D. Menda,Guilherme Ribeiro,Jonas Deuermeier,Esther López,Daniela Nunes,Santanu Jana,Irene Artacho,Rodrigo Martins,Iván Mora-Seró,Manuel J. Mendes,Iñigo Ramiro###
(195951, 195951)
Quantum-dot-in-perovskite (Q<missing VAR>DiP) solids, where inorganic quantum dots (Q<missing VAR>Ds) areembedded in a halide perovskite matrix, have been recently suggested as apromising material platform for developing IBSCs.
EXCEPTION 3: IndexError for Ds
IBSCs
[140.0, 50, '%', 2],[216.0, 204, 'meV', 3]

PbSe
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196244, 196245)
High Efficiency Carrier Multiplication in PbSe Nanocrystals Implications for Solar Energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 100, '%', 3]

(II)
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196276, 196279)
 We demonstrate for the first time that impact ionization (II) [the inverse ofAuger recombination (AR)] occurs with very high efficiency in semiconductornanocrystals (NCs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 100, '%', 2]

(NCs)
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196316, 196319)
 We demonstrate for the first time that impact ionization (II) [the inverse ofAuger recombination (AR)] occurs with very high efficiency in semiconductornanocrystals (NCs).
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 100, '%', 2]

PbSe
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196330, 196331)
 Interband optical excitation of PbSe NCs at low pumpintensities, for which less than one exciton is initially generated per NC onaverage, results in the formation of two or more excitons (carriermultiplication) when pump photon energies are more than three times the NC bandgap energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 100, '%', 1]

NCs
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196333, 196334)
 Interband optical excitation of PbSe NCs at low pumpintensities, for which less than one exciton is initially generated per NC onaverage, results in the formation of two or more excitons (carriermultiplication) when pump photon energies are more than three times the NC bandgap energy.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 100, '%', 1]

NC
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196366, 196367)
 Interband optical excitation of PbSe NCs at low pumpintensities, for which less than one exciton is initially generated per NC onaverage, results in the formation of two or more excitons (carriermultiplication) when pump photon energies are more than three times the NC bandgap energy.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 100, '%', 1]

NC
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196420, 196421)
 Interband optical excitation of PbSe NCs at low pumpintensities, for which less than one exciton is initially generated per NC onaverage, results in the formation of two or more excitons (carriermultiplication) when pump photon energies are more than three times the NC bandgap energy.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 100, '%', 1]

II
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196510, 196511)
 Efficient II in NCs can be used to considerably increase the powerconversion efficiency of NC-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 100, '%', 1]

NCs
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196515, 196516)
 Efficient II in NCs can be used to considerably increase the powerconversion efficiency of NC-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 100, '%', 1]

NC
###High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy|R. D. Schaller,V. I. Klimov###
(196541, 196542)
 Efficient II in NCs can be used to considerably increase the powerconversion efficiency of NC-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 100, '%', 1]

In
###An electronic ratchet is required in nanostructured intermediate band solar cells|Amaury Delamarre,Daniel Suchet,Nicolas Cavassilas,Yoshitaka Okada,Masakazu Sugiyama,Jean-François Guillemoles###
(196766, 196766)
 In order to solve those issues, we consider devices including anelectronic ratchet mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197299, 197299)
First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M<missing VAR>In,Al; X<missing VAR>S, Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197306, 197306)
First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M<missing VAR>In,Al; X<missing VAR>S, Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197308, 197308)
First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M<missing VAR>In,Al; X<missing VAR>S, Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197312, 197312)
First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M<missing VAR>In,Al; X<missing VAR>S, Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197315, 197315)
First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M<missing VAR>In,Al; X<missing VAR>S, Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197317, 197317)
First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M<missing VAR>In,Al; X<missing VAR>S, Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197365, 197365)
 Using the Spectroscopic Limited Maximum Efficiency, and Shockley and Queisserpredictor models, we compute the solar efficiency of the chalcopyritesAgMX2(M<missing VAR>In,Al;X<missing VAR>S,Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197371, 197371)
 Using the Spectroscopic Limited Maximum Efficiency, and Shockley and Queisserpredictor models, we compute the solar efficiency of the chalcopyritesAgMX2(M<missing VAR>In,Al;X<missing VAR>S,Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197373, 197373)
 Using the Spectroscopic Limited Maximum Efficiency, and Shockley and Queisserpredictor models, we compute the solar efficiency of the chalcopyritesAgMX2(M<missing VAR>In,Al;X<missing VAR>S,Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197376, 197376)
 Using the Spectroscopic Limited Maximum Efficiency, and Shockley and Queisserpredictor models, we compute the solar efficiency of the chalcopyritesAgMX2(M<missing VAR>In,Al;X<missing VAR>S,Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197378, 197378)
 Using the Spectroscopic Limited Maximum Efficiency, and Shockley and Queisserpredictor models, we compute the solar efficiency of the chalcopyritesAgMX2(M<missing VAR>In,Al;X<missing VAR>S,Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###First principles prediction of the solar cell efficiency of chalcopyrite materials AgMX2 (M=In,Al; X=S, Se,Te)|GM Dongho-Nguimdo,Emanuel Igumbor,Serges Zambou,Daniel P. Joubert###
(197380, 197380)
 Using the Spectroscopic Limited Maximum Efficiency, and Shockley and Queisserpredictor models, we compute the solar efficiency of the chalcopyritesAgMX2(M<missing VAR>In,Al;X<missing VAR>S,Se,Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BO
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197659, 197660)
Theoretical Characterization of Photoactive Molecular Systems Based on BOD<missing VAR>IPY-Derivatives for the Design of Organic Solar Cells.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IPY
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197662, 197664)
Theoretical Characterization of Photoactive Molecular Systems Based on BOD<missing VAR>IPY-Derivatives for the Design of Organic Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC61B
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197824, 197827)
 According tothe energy of the exciton driving force they have the appropriate energy levelsto match textbftextitPC61BM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197847, 197847)
 The properties affecting the opencircuit voltage (Voc), J<missing VAR>sc and the fill factor (FF) wereinvestigated by calculating the geometric structures, the boundary molecularorbital energy levels, absorption spectra, light collection efficiencies, charetransfer rates, and exciton binding energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FF)
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197863, 197866)
 The properties affecting the opencircuit voltage (Voc), J<missing VAR>sc and the fill factor (FF) wereinvestigated by calculating the geometric structures, the boundary molecularorbital energy levels, absorption spectra, light collection efficiencies, charetransfer rates, and exciton binding energies.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197940, 197940)
 The results show that thetextbftextitBT<missing VAR>PAIII system has a lower LUMO level, high absorptionefficiency, and exction dissociation than other molecular systems, facilitatingthe improvement of Voc, J<missing VAR>sc and FF.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197942, 197942)
 The results show that thetextbftextitBT<missing VAR>PAIII system has a lower LUMO level, high absorptionefficiency, and exction dissociation than other molecular systems, facilitatingthe improvement of Voc, J<missing VAR>sc and FF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197944, 197946)
 The results show that thetextbftextitBT<missing VAR>PAIII system has a lower LUMO level, high absorptionefficiency, and exction dissociation than other molecular systems, facilitatingthe improvement of Voc, J<missing VAR>sc and FF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197959, 197959)
 The results show that thetextbftextitBT<missing VAR>PAIII system has a lower LUMO level, high absorptionefficiency, and exction dissociation than other molecular systems, facilitatingthe improvement of Voc, J<missing VAR>sc and FF.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(197996, 197996)
 The results show that thetextbftextitBT<missing VAR>PAIII system has a lower LUMO level, high absorptionefficiency, and exction dissociation than other molecular systems, facilitatingthe improvement of Voc, J<missing VAR>sc and FF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(198005, 198006)
 The results show that thetextbftextitBT<missing VAR>PAIII system has a lower LUMO level, high absorptionefficiency, and exction dissociation than other molecular systems, facilitatingthe improvement of Voc, J<missing VAR>sc and FF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(198015, 198015)
 Finally,textbftextitBT<missing VAR>PAIII would be the most promising of this series of donorsand further increase the efficiency of the device.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(198017, 198017)
 Finally,textbftextitBT<missing VAR>PAIII would be the most promising of this series of donorsand further increase the efficiency of the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Theoretical Characterization of Photoactive Molecular Systems Based on BODIPY-Derivatives for the Design of Organic Solar Cells|Duvalier Madrid-Úsuga,Ana G. Mora-Leon,Andrea Cabrera-Espinosa,Braulio Insuasty,Alejandro Ortiz###
(198019, 198021)
 Finally,textbftextitBT<missing VAR>PAIII would be the most promising of this series of donorsand further increase the efficiency of the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Efficient light-trapping in ultrathin GaAs solar cells using quasi-random photonic crystals|Jeronimo Buencuerpo,Theresa E. Saenz,Mark Steger,Michelle Young,Emily L. Warren,John F. Geisz,Myles A. Steiner,Adele C. Tamboli###
(198079, 198080)
Efficient light-trapping in ultrathin GaAs solar cells using quasi-random photonic crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 260, 'nm', 6],[295.0, 22.35, '%', 6]

GaAs
###Efficient light-trapping in ultrathin GaAs solar cells using quasi-random photonic crystals|Jeronimo Buencuerpo,Theresa E. Saenz,Mark Steger,Michelle Young,Emily L. Warren,John F. Geisz,Myles A. Steiner,Adele C. Tamboli###
(198325, 198326)
 We demonstratean ultrathin GaAs cell of 260 nm with a rear quasi-random pattern withsubmicron features, and a Jsc 26.4 m<missing VAR>A/cm2 and an efficiency of 22.35% underthe global solar spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 260, 'nm', 0],[49.0, 22.35, '%', 0]

TiO2
###Electron transport in the dye sensitized nanocrystalline cell|A Kambili,A B Walker,F Qiu,A C Fisher,A D Savin,L M Peter###
(198487, 198489)
The cell is based on a thin film of dye-sensitised nanocrystalline TiO2interpenetrated by a redox electrolyte.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 12, '%', 1],[55.0, 46, '%', 1]

TiO2
###Electron transport in the dye sensitized nanocrystalline cell|A Kambili,A B Walker,F Qiu,A C Fisher,A D Savin,L M Peter###
(198515, 198517)
 The high surface area of the TiO2and the spectral characteristics of the dye allow the device to harvest 46% ofthe solar energy flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 12, '%', 2],[27.0, 46, '%', 0]

I3
###Electron transport in the dye sensitized nanocrystalline cell|A Kambili,A B Walker,F Qiu,A C Fisher,A D Savin,L M Peter###
(198829, 198830)
 For the first time in such a model, a backreaction with the I3- ions in the electrolyte that is second order in theelectron density has been included.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 12, '%', 7],[285.0, 46, '%', 5]

C
###Broad Band Photon Harvesting Biomolecules for Photovoltaics|P. Meredith,B. J. Powell,J. Riesz,R. Vogel,D. Blake,I. Kartini,G. Will,S. Subianto###
(198951, 198951)
 We demonstrate these principles by examining the operationof the so-called dye sensitized solar cell (D<missing VAR>SSC) - a photoelectrochemicaldevice which simulates the charge separation process across a nano-structuredmembrane that is characteristic of natural systems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Broad Band Photon Harvesting Biomolecules for Photovoltaics|P. Meredith,B. J. Powell,J. Riesz,R. Vogel,D. Blake,I. Kartini,G. Will,S. Subianto###
(199044, 199045)
 These type of devices havegreat potential to challenge silicon semiconductor technology in the low cost,medium efficiency segment of the PV market.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSCs
###Broad Band Photon Harvesting Biomolecules for Photovoltaics|P. Meredith,B. J. Powell,J. Riesz,R. Vogel,D. Blake,I. Kartini,G. Will,S. Subianto###
(199078, 199080)
 Ruthenium charge transfer complexesare currently used as the photon harvesting components in D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UV
###Broad Band Photon Harvesting Biomolecules for Photovoltaics|P. Meredith,B. J. Powell,J. Riesz,R. Vogel,D. Blake,I. Kartini,G. Will,S. Subianto###
(199096, 199097)
 They produce arelatively broad band UV and visible response, but have long term stabilityproblems and are expensive to manufacture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires|Yaping Dan,Kwanyong Seo,Kuniharu Takei,Jhim H. Meza,Ali Javey,Kenneth B. Crozier###
(199570, 199570)
 [7, 12-14] Here we show that a thin layer of amorphoussilicon (a-Si) coated on a single-crystalline silicon nanowire (sc-SiNW),forming a core-shell structure in-situ in the vapor-liquid-solid (VL<missing VAR>S) process,reduces the surface recombination nearly two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, ',', 2],[92.0, 7, ',', 1],[88.0, 8, ',', 1],[85.0, 10, ',', 1],[32.0, 7, ',', 0]

W
###Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires|Yaping Dan,Kwanyong Seo,Kuniharu Takei,Jhim H. Meza,Ali Javey,Kenneth B. Crozier###
(199592, 199592)
 [7, 12-14] Here we show that a thin layer of amorphoussilicon (a-Si) coated on a single-crystalline silicon nanowire (sc-SiNW),forming a core-shell structure in-situ in the vapor-liquid-solid (VL<missing VAR>S) process,reduces the surface recombination nearly two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 2, ',', 2],[114.0, 7, ',', 1],[110.0, 8, ',', 1],[107.0, 10, ',', 1],[54.0, 7, ',', 0]

V
###Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires|Yaping Dan,Kwanyong Seo,Kuniharu Takei,Jhim H. Meza,Ali Javey,Kenneth B. Crozier###
(199622, 199622)
 [7, 12-14] Here we show that a thin layer of amorphoussilicon (a-Si) coated on a single-crystalline silicon nanowire (sc-SiNW),forming a core-shell structure in-situ in the vapor-liquid-solid (VL<missing VAR>S) process,reduces the surface recombination nearly two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 2, ',', 2],[144.0, 7, ',', 1],[140.0, 8, ',', 1],[137.0, 10, ',', 1],[84.0, 7, ',', 0]

S
###Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires|Yaping Dan,Kwanyong Seo,Kuniharu Takei,Jhim H. Meza,Ali Javey,Kenneth B. Crozier###
(199624, 199624)
 [7, 12-14] Here we show that a thin layer of amorphoussilicon (a-Si) coated on a single-crystalline silicon nanowire (sc-SiNW),forming a core-shell structure in-situ in the vapor-liquid-solid (VL<missing VAR>S) process,reduces the surface recombination nearly two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 2, ',', 2],[146.0, 7, ',', 1],[142.0, 8, ',', 1],[139.0, 10, ',', 1],[86.0, 7, ',', 0]

Si
###Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires|Yaping Dan,Kwanyong Seo,Kuniharu Takei,Jhim H. Meza,Ali Javey,Kenneth B. Crozier###
(199743, 199743)
 Simulations of the optical absorption of the nanowiresindicate that the strong absorption of the a-Si shell contributes to thiseffect, but we conclude that the effect is mainly due to the enhanced carrierlifetime by surface passivation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 2, ',', 4],[265.0, 7, ',', 3],[261.0, 8, ',', 3],[258.0, 10, ',', 3],[205.0, 7, ',', 2]

PbS
###Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices|Artem A. Bakulin,Stefanie Neutzner,Huib J. Bakker,Laurent Ottaviani,Damien Barakel,Zhuoying Chen###
(199809, 199810)
Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 0.2, 'eV', 5]

PbS
###Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices|Artem A. Bakulin,Stefanie Neutzner,Huib J. Bakker,Laurent Ottaviani,Damien Barakel,Zhuoying Chen###
(199947, 199948)
We apply a recently developed ultrafast electro-optical technique, pump-pushphotocurrent spectroscopy, to elucidate the charge trapping dynamics in PbScolloidal-QD photovoltaic devices at working conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0.2, 'eV', 3]

I
###Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices|Artem A. Bakulin,Stefanie Neutzner,Huib J. Bakker,Laurent Ottaviani,Damien Barakel,Zhuoying Chen###
(199973, 199973)
 We show that IR<missing VAR>photo-induced absorption of QD in the 0.2-0.5 e<missing VAR>V region is partly associatedwith immobile charges, which can be optically de-trapped in our experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 0.2, 'eV', 2]

V
###Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices|Artem A. Bakulin,Stefanie Neutzner,Huib J. Bakker,Laurent Ottaviani,Damien Barakel,Zhuoying Chen###
(199997, 199997)
 We show that IR<missing VAR>photo-induced absorption of QD in the 0.2-0.5 e<missing VAR>V region is partly associatedwith immobile charges, which can be optically de-trapped in our experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.2, 'eV', 2]

V
###Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices|Artem A. Bakulin,Stefanie Neutzner,Huib J. Bakker,Laurent Ottaviani,Damien Barakel,Zhuoying Chen###
(200227, 200227)
Sequential population of deeper traps (activation energy 0.3-0.5 e<missing VAR>V) isobserved on the 0.1-10 ns time scales, indicating that most of carriertrapping occurs only after substantial charge relaxation/transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.2, 'eV', 2]

P3H
###Bipolar polaron pair recombination in P3HT/PCBM solar cells|Alexander J. Kupijai,Konstantin M. Behringer,Michael Corazza,Suren A. Gevorgyan,Frederik C. Krebs,Martin Stutzmann,Martin S. Brandt###
(200359, 200361)
Bipolar polaron pair recombination in P3HT<missing VAR>/PCBM<missing VAR> solar cells.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCB
###Bipolar polaron pair recombination in P3HT/PCBM solar cells|Alexander J. Kupijai,Konstantin M. Behringer,Michael Corazza,Suren A. Gevorgyan,Frederik C. Krebs,Martin Stutzmann,Martin S. Brandt###
(200364, 200366)
Bipolar polaron pair recombination in P3HT<missing VAR>/PCBM<missing VAR> solar cells.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Bipolar polaron pair recombination in P3HT/PCBM solar cells|Alexander J. Kupijai,Konstantin M. Behringer,Michael Corazza,Suren A. Gevorgyan,Frederik C. Krebs,Martin Stutzmann,Martin S. Brandt###
(200645, 200647)
 Using multi-frequency pulsedelectrically detected magnetic resonance (pEDMR), we show that thespin-dependent response of P3HT<missing VAR>/PCBM<missing VAR> solar cells at low temperatures isgoverned by bipolar polaron pair recombination involving the positive andnegative polarons in P3HT<missing VAR> and PCBM<missing VAR>, respectively, thus excluding a unipolarbipolaron formation as the main contribution to the spin-dependent chargetransfer in this temperature regime.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCB
###Bipolar polaron pair recombination in P3HT/PCBM solar cells|Alexander J. Kupijai,Konstantin M. Behringer,Michael Corazza,Suren A. Gevorgyan,Frederik C. Krebs,Martin Stutzmann,Martin S. Brandt###
(200650, 200652)
 Using multi-frequency pulsedelectrically detected magnetic resonance (pEDMR), we show that thespin-dependent response of P3HT<missing VAR>/PCBM<missing VAR> solar cells at low temperatures isgoverned by bipolar polaron pair recombination involving the positive andnegative polarons in P3HT<missing VAR> and PCBM<missing VAR>, respectively, thus excluding a unipolarbipolaron formation as the main contribution to the spin-dependent chargetransfer in this temperature regime.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Bipolar polaron pair recombination in P3HT/PCBM solar cells|Alexander J. Kupijai,Konstantin M. Behringer,Michael Corazza,Suren A. Gevorgyan,Frederik C. Krebs,Martin Stutzmann,Martin S. Brandt###
(200695, 200697)
 Using multi-frequency pulsedelectrically detected magnetic resonance (pEDMR), we show that thespin-dependent response of P3HT<missing VAR>/PCBM<missing VAR> solar cells at low temperatures isgoverned by bipolar polaron pair recombination involving the positive andnegative polarons in P3HT<missing VAR> and PCBM<missing VAR>, respectively, thus excluding a unipolarbipolaron formation as the main contribution to the spin-dependent chargetransfer in this temperature regime.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCB
###Bipolar polaron pair recombination in P3HT/PCBM solar cells|Alexander J. Kupijai,Konstantin M. Behringer,Michael Corazza,Suren A. Gevorgyan,Frederik C. Krebs,Martin Stutzmann,Martin S. Brandt###
(200702, 200704)
 Using multi-frequency pulsedelectrically detected magnetic resonance (pEDMR), we show that thespin-dependent response of P3HT<missing VAR>/PCBM<missing VAR> solar cells at low temperatures isgoverned by bipolar polaron pair recombination involving the positive andnegative polarons in P3HT<missing VAR> and PCBM<missing VAR>, respectively, thus excluding a unipolarbipolaron formation as the main contribution to the spin-dependent chargetransfer in this temperature regime.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(200911, 200919)
Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 20, '%', 1]

CH3NH3PbI3
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(200932, 200940)
 The organic-inorganic hybrid perovskite CH3NH3PbI3 has attracted significantinterest for its high performance in converting solar light into electricalpower with an efficiency exceeding 20%.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 20, '%', 0]

CH3NH3PbI3
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201012, 201020)
 Unfortunately, chemical stability isone major challenge in the development of the CH3NH3PbI3 solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 20, '%', 1]

CH3NH3PbI3
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201103, 201111)
 It wascommonly assumed that moisture or oxygen in the environment causes the poorstability of hybrid halide perovskites, however, here we show from thefirst-principles calculations that the room-temperature tetragonal phase ofCH3NH3PbI3 is thermodynamically unstable with respect to the phase separationinto CH3NH3I + PbI2, i.e.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 20, '%', 2]

CH3NH3I
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201134, 201140)
 It wascommonly assumed that moisture or oxygen in the environment causes the poorstability of hybrid halide perovskites, however, here we show from thefirst-principles calculations that the room-temperature tetragonal phase ofCH3NH3PbI3 is thermodynamically unstable with respect to the phase separationinto CH3NH3I + PbI2, i.e.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0.1111111111111111,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 20, '%', 2]

PbI2
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201144, 201146)
 It wascommonly assumed that moisture or oxygen in the environment causes the poorstability of hybrid halide perovskites, however, here we show from thefirst-principles calculations that the room-temperature tetragonal phase ofCH3NH3PbI3 is thermodynamically unstable with respect to the phase separationinto CH3NH3I + PbI2, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 20, '%', 2]

CH3NH3PbI3
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201264, 201272)
 Contributions from vibrational andconfigurational entropy at room temperature have been considered, but theinstability of CH3NH3PbI3 is unchanged.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 20, '%', 5]

I
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201281, 201281)
 When I is replaced by Br or Cl, Pb bySn, or the organic cation CH3NH3 by inorganic Cs, the perovskites become morestable and do not phase-separate spontaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 20, '%', 6]

Br
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201289, 201289)
 When I is replaced by Br or Cl, Pb bySn, or the organic cation CH3NH3 by inorganic Cs, the perovskites become morestable and do not phase-separate spontaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 20, '%', 6]

Cl
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201293, 201293)
 When I is replaced by Br or Cl, Pb bySn, or the organic cation CH3NH3 by inorganic Cs, the perovskites become morestable and do not phase-separate spontaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 20, '%', 6]

Pb
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201296, 201296)
 When I is replaced by Br or Cl, Pb bySn, or the organic cation CH3NH3 by inorganic Cs, the perovskites become morestable and do not phase-separate spontaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 20, '%', 6]

Sn
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201301, 201301)
 When I is replaced by Br or Cl, Pb bySn, or the organic cation CH3NH3 by inorganic Cs, the perovskites become morestable and do not phase-separate spontaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 20, '%', 6]

CH3NH3
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201312, 201317)
 When I is replaced by Br or Cl, Pb bySn, or the organic cation CH3NH3 by inorganic Cs, the perovskites become morestable and do not phase-separate spontaneously.
Featurization terminated normally.
0.75,0,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 20, '%', 6]

Cs
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201323, 201323)
 When I is replaced by Br or Cl, Pb bySn, or the organic cation CH3NH3 by inorganic Cs, the perovskites become morestable and do not phase-separate spontaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 20, '%', 6]

CH3NH3PbI3
###Intrinsic Instability of the Hybrid Halide Perovskite Semiconductor CH3NH3PbI3|Yue-Yu Zhang,Shiyou Chen,Peng Xu,Hongjun Xiang,Xin-Gao Gong,Aron Walsh,Su-Huai Wei###
(201373, 201381)
 Our study highlights that thepoor chemical stability is intrinsic to CH3NH3PbI3 and suggests thatelement-substitution may solve the chemical stability problem in hybrid halideperovskite solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 20, '%', 7]

CH3NH3PbI3
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201440, 201448)
Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 20, '%', 1],[224.0, 327, 'K', 5],[241.0, 327, 'K', 5],[324.0, 165, 'K', 5]

(CH3NH3PbI3)
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201459, 201469)
 Methylammonium lead iodide (CH3NH3PbI3) based solar cells have shownimpressive power conversion efficiencies of above 20%.
Featurization successful!
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 20, '%', 0],[203.0, 327, 'K', 4],[220.0, 327, 'K', 4],[303.0, 165, 'K', 4]

CH3NH3PbI3
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201642, 201650)
 Here, using elastic and quasi-elastic neutron scatteringtechniques and group theoretical analysis, we studied rotational modes of theCH3NH3+ cation in CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 20, '%', 3],[22.0, 327, 'K', 1],[39.0, 327, 'K', 1],[122.0, 165, 'K', 1]

K
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201682, 201682)
 Our results show that, in the cubic (T<missing VAR> > 327K)and tetragonal (165K < T<missing VAR> < 327K) phases, the CH3NH3+ ions exhibit four-foldrotational symmetry of the C-N axis (C4) along with three-fold rotation aroundthe C-N axis (C3), while in orthorhombic phase (T<missing VAR> < 165K) only C3 rotation ispresent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 20, '%', 4],[10.0, 327, 'K', 0],[7.0, 327, 'K', 0],[90.0, 165, 'K', 0]

C
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201722, 201722)
 Our results show that, in the cubic (T<missing VAR> > 327K)and tetragonal (165K < T<missing VAR> < 327K) phases, the CH3NH3+ ions exhibit four-foldrotational symmetry of the C-N axis (C4) along with three-fold rotation aroundthe C-N axis (C3), while in orthorhombic phase (T<missing VAR> < 165K) only C3 rotation ispresent.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 20, '%', 4],[50.0, 327, 'K', 0],[33.0, 327, 'K', 0],[50.0, 165, 'K', 0]

N
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201724, 201724)
 Our results show that, in the cubic (T<missing VAR> > 327K)and tetragonal (165K < T<missing VAR> < 327K) phases, the CH3NH3+ ions exhibit four-foldrotational symmetry of the C-N axis (C4) along with three-fold rotation aroundthe C-N axis (C3), while in orthorhombic phase (T<missing VAR> < 165K) only C3 rotation ispresent.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 20, '%', 4],[52.0, 327, 'K', 0],[35.0, 327, 'K', 0],[48.0, 165, 'K', 0]

(C4)
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201728, 201731)
 Our results show that, in the cubic (T<missing VAR> > 327K)and tetragonal (165K < T<missing VAR> < 327K) phases, the CH3NH3+ ions exhibit four-foldrotational symmetry of the C-N axis (C4) along with three-fold rotation aroundthe C-N axis (C3), while in orthorhombic phase (T<missing VAR> < 165K) only C3 rotation ispresent.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 20, '%', 4],[56.0, 327, 'K', 0],[39.0, 327, 'K', 0],[41.0, 165, 'K', 0]

C
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201748, 201748)
 Our results show that, in the cubic (T<missing VAR> > 327K)and tetragonal (165K < T<missing VAR> < 327K) phases, the CH3NH3+ ions exhibit four-foldrotational symmetry of the C-N axis (C4) along with three-fold rotation aroundthe C-N axis (C3), while in orthorhombic phase (T<missing VAR> < 165K) only C3 rotation ispresent.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 20, '%', 4],[76.0, 327, 'K', 0],[59.0, 327, 'K', 0],[24.0, 165, 'K', 0]

N
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201750, 201750)
 Our results show that, in the cubic (T<missing VAR> > 327K)and tetragonal (165K < T<missing VAR> < 327K) phases, the CH3NH3+ ions exhibit four-foldrotational symmetry of the C-N axis (C4) along with three-fold rotation aroundthe C-N axis (C3), while in orthorhombic phase (T<missing VAR> < 165K) only C3 rotation ispresent.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 20, '%', 4],[78.0, 327, 'K', 0],[61.0, 327, 'K', 0],[22.0, 165, 'K', 0]

(C3)
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201754, 201757)
 Our results show that, in the cubic (T<missing VAR> > 327K)and tetragonal (165K < T<missing VAR> < 327K) phases, the CH3NH3+ ions exhibit four-foldrotational symmetry of the C-N axis (C4) along with three-fold rotation aroundthe C-N axis (C3), while in orthorhombic phase (T<missing VAR> < 165K) only C3 rotation ispresent.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 20, '%', 4],[82.0, 327, 'K', 0],[65.0, 327, 'K', 0],[15.0, 165, 'K', 0]

C3
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201777, 201778)
 Our results show that, in the cubic (T<missing VAR> > 327K)and tetragonal (165K < T<missing VAR> < 327K) phases, the CH3NH3+ ions exhibit four-foldrotational symmetry of the C-N axis (C4) along with three-fold rotation aroundthe C-N axis (C3), while in orthorhombic phase (T<missing VAR> < 165K) only C3 rotation ispresent.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 20, '%', 4],[105.0, 327, 'K', 0],[88.0, 327, 'K', 0],[5.0, 165, 'K', 0]

C4
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201808, 201809)
 Around room temperature, the characteristic relaxation times for theC4 rotation is found to be ps while for the C3 rotation ps.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 20, '%', 5],[136.0, 327, 'K', 1],[119.0, 327, 'K', 1],[36.0, 165, 'K', 1]

C3
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201829, 201830)
 Around room temperature, the characteristic relaxation times for theC4 rotation is found to be ps while for the C3 rotation ps.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 20, '%', 5],[157.0, 327, 'K', 1],[140.0, 327, 'K', 1],[57.0, 165, 'K', 1]

C4
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201885, 201886)
 Our data show a close correlation between the C4rotational mode and the temperature dependent dielectric permittivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 20, '%', 7],[213.0, 327, 'K', 3],[196.0, 327, 'K', 3],[113.0, 165, 'K', 3]

CH3NH3PbI3
###Rotational Dynamics of Organic Cations in CH3NH3PbI3 Perovskite|T. Chen,B. J. Foley,B. Ipek,M. Tyagi,J. R. D. Copley,C. M. Brown,J. J. Choi,S. -H. Lee###
(201971, 201979)
 Ourfindings on the rotational dynamics of CH3NH3+ and the associated dipole haveimportant implications on understanding the low exciton binding energy and slowcharge recombination rate in CH3NH3PbI3 which are directly relevant for thehigh solar cell performance.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[477.0, 20, '%', 8],[299.0, 327, 'K', 4],[282.0, 327, 'K', 4],[199.0, 165, 'K', 4]

GaAs
###Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells|Shengjiao Zhang,Shisheng Lin,Xiaoqiang Li,Xiaoyi Liu,Hengan Wu,Peng Wang,Zhiqian Wu,Huikai Zhong,Wenli Xu,Zhijuan Xu###
(202039, 202040)
Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 3.4, 'at', 3],[209.0, 28, 'eV', 5],[250.0, 0.13, 'eV', 5],[296.0, 33.7, '%', 6]

Si
###Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells|Shengjiao Zhang,Shisheng Lin,Xiaoqiang Li,Xiaoyi Liu,Hengan Wu,Peng Wang,Zhiqian Wu,Huikai Zhong,Wenli Xu,Zhijuan Xu###
(202127, 202127)
 Herein, we have successfullysynthesized monolayer silicon-doped graphene (SiG) in large area by chemicalvapor deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3.4, 'at', 1],[122.0, 28, 'eV', 3],[163.0, 0.13, 'eV', 3],[209.0, 33.7, '%', 4]

Si
###Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells|Shengjiao Zhang,Shisheng Lin,Xiaoqiang Li,Xiaoyi Liu,Hengan Wu,Peng Wang,Zhiqian Wu,Huikai Zhong,Wenli Xu,Zhijuan Xu###
(202286, 202286)
 28 eV supported by the first-principlecalculations, and the ultraviolet photoelectron spectroscopy demonstrates thework function of SiG<missing VAR> is 0.13 eV larger than that of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3.4, 'at', 2],[37.0, 28, 'eV', 0],[4.0, 0.13, 'eV', 0],[50.0, 33.7, '%', 1]

Si
###Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells|Shengjiao Zhang,Shisheng Lin,Xiaoqiang Li,Xiaoyi Liu,Hengan Wu,Peng Wang,Zhiqian Wu,Huikai Zhong,Wenli Xu,Zhijuan Xu###
(202309, 202309)
 Moreover, theSiG<missing VAR>/GaAs heterostructure solar cells show an improved power conversionefficiency of 33.7% in average than that of graphene/GaAs solar cells, whichare attributed to the increased barrier height and improved interface quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 3.4, 'at', 3],[60.0, 28, 'eV', 1],[19.0, 0.13, 'eV', 1],[27.0, 33.7, '%', 0]

GaAs
###Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells|Shengjiao Zhang,Shisheng Lin,Xiaoqiang Li,Xiaoyi Liu,Hengan Wu,Peng Wang,Zhiqian Wu,Huikai Zhong,Wenli Xu,Zhijuan Xu###
(202312, 202313)
 Moreover, theSiG<missing VAR>/GaAs heterostructure solar cells show an improved power conversionefficiency of 33.7% in average than that of graphene/GaAs solar cells, whichare attributed to the increased barrier height and improved interface quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3.4, 'at', 3],[63.0, 28, 'eV', 1],[22.0, 0.13, 'eV', 1],[23.0, 33.7, '%', 0]

GaAs
###Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells|Shengjiao Zhang,Shisheng Lin,Xiaoqiang Li,Xiaoyi Liu,Hengan Wu,Peng Wang,Zhiqian Wu,Huikai Zhong,Wenli Xu,Zhijuan Xu###
(202351, 202352)
 Moreover, theSiG<missing VAR>/GaAs heterostructure solar cells show an improved power conversionefficiency of 33.7% in average than that of graphene/GaAs solar cells, whichare attributed to the increased barrier height and improved interface quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 3.4, 'at', 3],[102.0, 28, 'eV', 1],[61.0, 0.13, 'eV', 1],[15.0, 33.7, '%', 0]

Si
###Opening the band gap of graphene through silicon doping for improved performance of graphene/GaAs heterojunction solar cells|Shengjiao Zhang,Shisheng Lin,Xiaoqiang Li,Xiaoyi Liu,Hengan Wu,Peng Wang,Zhiqian Wu,Huikai Zhong,Wenli Xu,Zhijuan Xu###
(202417, 202417)
Our results suggest silicon doping can effectively engineer the band gap ofmonolayer graphene and SiG<missing VAR> has great potential in optoelectronic deviceapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 3.4, 'at', 4],[168.0, 28, 'eV', 2],[127.0, 0.13, 'eV', 2],[81.0, 33.7, '%', 1]

CH3NH3PbI3
###Pressure-induced reversible phase transition and amorphization of CH$_3$NH$_3$PbI$_3$|Kai Wang,Ran Liu,Yuancun Qiao,Jinxing Cui,Bo Song,Bingbing Liu,Bo Zou###
(202460, 202468)
Pressure-induced reversible phase transition and amorphization of CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 7, 'GPa', 2],[162.0, 0.3, 'GPa', 3],[170.0, 4, 'GPa', 3]

In
###Pressure-induced reversible phase transition and amorphization of CH$_3$NH$_3$PbI$_3$|Kai Wang,Ran Liu,Yuancun Qiao,Jinxing Cui,Bo Song,Bingbing Liu,Bo Zou###
(202526, 202526)
 In this work, we utilized diamondanvil cell to investigate the pressure-induced structural and electronictransformations in methylammonium lead iodide (CH3NH3PbI3) up to 7 GPaat room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 7, 'GPa', 0],[104.0, 0.3, 'GPa', 1],[112.0, 4, 'GPa', 1]

(CH3NH3PbI3)
###Pressure-induced reversible phase transition and amorphization of CH$_3$NH$_3$PbI$_3$|Kai Wang,Ran Liu,Yuancun Qiao,Jinxing Cui,Bo Song,Bingbing Liu,Bo Zou###
(202571, 202581)
 In this work, we utilized diamondanvil cell to investigate the pressure-induced structural and electronictransformations in methylammonium lead iodide (CH3NH3PbI3) up to 7 GPaat room temperature.
Featurization successful!
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 7, 'GPa', 0],[49.0, 0.3, 'GPa', 1],[57.0, 4, 'GPa', 1]

I
###Pressure-induced reversible phase transition and amorphization of CH$_3$NH$_3$PbI$_3$|Kai Wang,Ran Liu,Yuancun Qiao,Jinxing Cui,Bo Song,Bingbing Liu,Bo Zou###
(202647, 202647)
 Further high pressure IR<missing VAR> spectroscopy experimentsillustrated the high pressure behavior of organic (CH3NH3)+ cations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 7, 'GPa', 2],[17.0, 0.3, 'GPa', 1],[9.0, 4, 'GPa', 1]

(CH3NH3)
###Pressure-induced reversible phase transition and amorphization of CH$_3$NH$_3$PbI$_3$|Kai Wang,Ran Liu,Yuancun Qiao,Jinxing Cui,Bo Song,Bingbing Liu,Bo Zou###
(202669, 202676)
 Further high pressure IR<missing VAR> spectroscopy experimentsillustrated the high pressure behavior of organic (CH3NH3)+ cations.
Featurization successful!
0.75,0,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 7, 'GPa', 2],[39.0, 0.3, 'GPa', 1],[31.0, 4, 'GPa', 1]

P
###Pressure-induced reversible phase transition and amorphization of CH$_3$NH$_3$PbI$_3$|Kai Wang,Ran Liu,Yuancun Qiao,Jinxing Cui,Bo Song,Bingbing Liu,Bo Zou###
(202721, 202721)
We also analyzed the pressure dependence of the band gap energy based on theoptical absorption and photoluminescence (PL) results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 7, 'GPa', 3],[91.0, 0.3, 'GPa', 2],[83.0, 4, 'GPa', 2]

C
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(202863, 202863)
 Electron beam induced current (E<missing VAR>BIC) is a powerful characterization techniquewhich offers the high spatial resolution needed to study polycrystalline solarcells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BIC
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(202910, 202912)
 Current models of E<missing VAR>BIC assume that excitations in the p-n junctiondepletion region result in perfect charge collection efficiency.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(202959, 202960)
 However wefind that in CdTe and Si samples prepared by focused ion beam (FIB) milling,there is a reduced and nonuniform E<missing VAR>BIC lineshape for excitations in thedepletion region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(202964, 202964)
 However wefind that in CdTe and Si samples prepared by focused ion beam (FIB) milling,there is a reduced and nonuniform E<missing VAR>BIC lineshape for excitations in thedepletion region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FIB)
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(202978, 202982)
 However wefind that in CdTe and Si samples prepared by focused ion beam (FIB) milling,there is a reduced and nonuniform E<missing VAR>BIC lineshape for excitations in thedepletion region.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BIC
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(203001, 203003)
 However wefind that in CdTe and Si samples prepared by focused ion beam (FIB) milling,there is a reduced and nonuniform E<missing VAR>BIC lineshape for excitations in thedepletion region.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BIC
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(203041, 203043)
 Motivated by this, we present a model of the E<missing VAR>BIC responsefor excitations in the depletion region which includes the effects of surfacerecombination from both charge-neutral and charged surfaces.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FIB
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(203180, 203182)
 We findthe experimental data on FIB-prepared Si solar cells is most consistent with acharged surface, and discuss the implications for E<missing VAR>BIC experiments onpolycrystalline materials.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(203186, 203186)
 We findthe experimental data on FIB-prepared Si solar cells is most consistent with acharged surface, and discuss the implications for E<missing VAR>BIC experiments onpolycrystalline materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BIC
###Depletion region surface effects in electron beam induced current measurements|Paul M. Haney,Heayoung P. Yoon,Benoit Gaury,Nikolai B. Zhitenev###
(203219, 203221)
 We findthe experimental data on FIB-prepared Si solar cells is most consistent with acharged surface, and discuss the implications for E<missing VAR>BIC experiments onpolycrystalline materials.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature|Hao Zhang,Mian Tao,Baizhi Gao,Wei Chen,Qi Li,Qingyu Xu,Shuai Dong###
(203245, 203253)
Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 160, 'oC', 3],[213.0, 210, 'oC', 3],[256.0, 760, 'nm', 4],[301.0, 160, 'oC', 5],[324.0, 200, 'oC', 5],[350.0, 15.75, 'mA', 6],[353.0, 2, ',', 6],[377.0, 71.66, '%', 6]

In
###Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature|Hao Zhang,Mian Tao,Baizhi Gao,Wei Chen,Qi Li,Qingyu Xu,Shuai Dong###
(203345, 203345)
 Inthis article, we report a novel fabrication technique of CH3NH3PbI3 layer basedon high temperature chemical vapor reaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 160, 'oC', 1],[121.0, 210, 'oC', 1],[164.0, 760, 'nm', 2],[209.0, 160, 'oC', 3],[232.0, 200, 'oC', 3],[258.0, 15.75, 'mA', 4],[261.0, 2, ',', 4],[285.0, 71.66, '%', 4]

CH3NH3PbI3
###Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature|Hao Zhang,Mian Tao,Baizhi Gao,Wei Chen,Qi Li,Qingyu Xu,Shuai Dong###
(203367, 203375)
 Inthis article, we report a novel fabrication technique of CH3NH3PbI3 layer basedon high temperature chemical vapor reaction.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 160, 'oC', 1],[91.0, 210, 'oC', 1],[134.0, 760, 'nm', 2],[179.0, 160, 'oC', 3],[202.0, 200, 'oC', 3],[228.0, 15.75, 'mA', 4],[231.0, 2, ',', 4],[255.0, 71.66, '%', 4]

CH3NH3PbI3
###Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature|Hao Zhang,Mian Tao,Baizhi Gao,Wei Chen,Qi Li,Qingyu Xu,Shuai Dong###
(203395, 203403)
 CH3NH3PbI3 layers have beenprepared by the reaction of PbI2 films which were deposited by pulsed laserdeposition, with CH3NH3I vapor at various temperatures from 160 oC to 210 oC.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 160, 'oC', 0],[63.0, 210, 'oC', 0],[106.0, 760, 'nm', 1],[151.0, 160, 'oC', 2],[174.0, 200, 'oC', 2],[200.0, 15.75, 'mA', 3],[203.0, 2, ',', 3],[227.0, 71.66, '%', 3]

PbI2
###Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature|Hao Zhang,Mian Tao,Baizhi Gao,Wei Chen,Qi Li,Qingyu Xu,Shuai Dong###
(203422, 203424)
 CH3NH3PbI3 layers have beenprepared by the reaction of PbI2 films which were deposited by pulsed laserdeposition, with CH3NH3I vapor at various temperatures from 160 oC to 210 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 160, 'oC', 0],[42.0, 210, 'oC', 0],[85.0, 760, 'nm', 1],[130.0, 160, 'oC', 2],[153.0, 200, 'oC', 2],[179.0, 15.75, 'mA', 3],[182.0, 2, ',', 3],[206.0, 71.66, '%', 3]

CH3NH3I
###Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature|Hao Zhang,Mian Tao,Baizhi Gao,Wei Chen,Qi Li,Qingyu Xu,Shuai Dong###
(203446, 203452)
 CH3NH3PbI3 layers have beenprepared by the reaction of PbI2 films which were deposited by pulsed laserdeposition, with CH3NH3I vapor at various temperatures from 160 oC to 210 oC.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0.1111111111111111,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 160, 'oC', 0],[14.0, 210, 'oC', 0],[57.0, 760, 'nm', 1],[102.0, 160, 'oC', 2],[125.0, 200, 'oC', 2],[151.0, 15.75, 'mA', 3],[154.0, 2, ',', 3],[178.0, 71.66, '%', 3]

V
###Preparation of CH3NH3PbI3 thin films with tens of micrometer scale at high temperature|Hao Zhang,Mian Tao,Baizhi Gao,Wei Chen,Qi Li,Qingyu Xu,Shuai Dong###
(203620, 203620)
 The solar cells were fabricated,and short-circuit current density of 15.75 mA/cm2, open-circuit voltage of 0.49V and fill factor of 71.66% have been obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 160, 'oC', 3],[154.0, 210, 'oC', 3],[111.0, 760, 'nm', 2],[66.0, 160, 'oC', 1],[43.0, 200, 'oC', 1],[17.0, 15.75, 'mA', 0],[14.0, 2, ',', 0],[10.0, 71.66, '%', 0]

CCS
###The effect of electric field on multiple exciton generation in lead chalcogenide nanocrystals|Mahdi Gordi,Mohammad Kazem Moravvej-Farshi,Hamidreza Ramezani###
(203805, 203807)
 Using EOM-CCSD<missing VAR> as amany-body approach, we show that any electric field can affect the absorptivityspectra of the lead chalcogenide nanocrystals (Pb4Te4, Pb4Se4, and Pb4S4).
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb4Te4
###The effect of electric field on multiple exciton generation in lead chalcogenide nanocrystals|Mahdi Gordi,Mohammad Kazem Moravvej-Farshi,Hamidreza Ramezani###
(203856, 203859)
 Using EOM-CCSD<missing VAR> as amany-body approach, we show that any electric field can affect the absorptivityspectra of the lead chalcogenide nanocrystals (Pb4Te4, Pb4Se4, and Pb4S4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb4Se4
###The effect of electric field on multiple exciton generation in lead chalcogenide nanocrystals|Mahdi Gordi,Mohammad Kazem Moravvej-Farshi,Hamidreza Ramezani###
(203862, 203865)
 Using EOM-CCSD<missing VAR> as amany-body approach, we show that any electric field can affect the absorptivityspectra of the lead chalcogenide nanocrystals (Pb4Te4, Pb4Se4, and Pb4S4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S4
###The effect of electric field on multiple exciton generation in lead chalcogenide nanocrystals|Mahdi Gordi,Mohammad Kazem Moravvej-Farshi,Hamidreza Ramezani###
(203872, 203873)
 Using EOM-CCSD<missing VAR> as amany-body approach, we show that any electric field can affect the absorptivityspectra of the lead chalcogenide nanocrystals (Pb4Te4, Pb4Se4, and Pb4S4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb4Te4
###The effect of electric field on multiple exciton generation in lead chalcogenide nanocrystals|Mahdi Gordi,Mohammad Kazem Moravvej-Farshi,Hamidreza Ramezani###
(203932, 203935)
 Furthermore,simulations show that Pb4Te4, among the aforementioned nanocrystals, has thelowest MEG threshold and the strongest absorptivity peak that is located in themulti-excitation window, irrespective of the field strength, making it the mostsuitable candidate for MEG applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb4Te4
###The effect of electric field on multiple exciton generation in lead chalcogenide nanocrystals|Mahdi Gordi,Mohammad Kazem Moravvej-Farshi,Hamidreza Ramezani###
(204050, 204053)
 Simulations also demonstrate that anelectric field affects the MEG characteristics in the Pb4Te4 nanocrystal, ingeneral, less than it perturbs MEG characteristics in Pb4Se4 and Pb4S4nanocrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb4Se4
###The effect of electric field on multiple exciton generation in lead chalcogenide nanocrystals|Mahdi Gordi,Mohammad Kazem Moravvej-Farshi,Hamidreza Ramezani###
(204080, 204083)
 Simulations also demonstrate that anelectric field affects the MEG characteristics in the Pb4Te4 nanocrystal, ingeneral, less than it perturbs MEG characteristics in Pb4Se4 and Pb4S4nanocrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb4S4
###The effect of electric field on multiple exciton generation in lead chalcogenide nanocrystals|Mahdi Gordi,Mohammad Kazem Moravvej-Farshi,Hamidreza Ramezani###
(204087, 204090)
 Simulations also demonstrate that anelectric field affects the MEG characteristics in the Pb4Te4 nanocrystal, ingeneral, less than it perturbs MEG characteristics in Pb4Se4 and Pb4S4nanocrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204148, 204148)
Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204204, 204204)
 Non-fullerene acceptors based on perylenediimides (PD<missing VAR>Is) have garneredsignificant interest as an alternative to fullerene acceptors in organicphotovoltaics (OPVs), but their charge transport phenomena are not wellunderstood, especially in bulk heterojunctions (BHJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204238, 204239)
 Non-fullerene acceptors based on perylenediimides (PD<missing VAR>Is) have garneredsignificant interest as an alternative to fullerene acceptors in organicphotovoltaics (OPVs), but their charge transport phenomena are not wellunderstood, especially in bulk heterojunctions (BHJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BH
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204273, 204274)
 Non-fullerene acceptors based on perylenediimides (PD<missing VAR>Is) have garneredsignificant interest as an alternative to fullerene acceptors in organicphotovoltaics (OPVs), but their charge transport phenomena are not wellunderstood, especially in bulk heterojunctions (BHJs).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BH
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204322, 204323)
 Here, we investigatecharge transport and current fluctuations by performing correlatedlow-frequency noise and impedance spectroscopy measurements on two BHJ<missing VAR> OPVsystems, one employing a fullerene acceptor and the other employing a dimericPD<missing VAR>I acceptor.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OPV
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204326, 204328)
 Here, we investigatecharge transport and current fluctuations by performing correlatedlow-frequency noise and impedance spectroscopy measurements on two BHJ<missing VAR> OPVsystems, one employing a fullerene acceptor and the other employing a dimericPD<missing VAR>I acceptor.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204357, 204357)
 Here, we investigatecharge transport and current fluctuations by performing correlatedlow-frequency noise and impedance spectroscopy measurements on two BHJ<missing VAR> OPVsystems, one employing a fullerene acceptor and the other employing a dimericPD<missing VAR>I acceptor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204359, 204359)
 Here, we investigatecharge transport and current fluctuations by performing correlatedlow-frequency noise and impedance spectroscopy measurements on two BHJ<missing VAR> OPVsystems, one employing a fullerene acceptor and the other employing a dimericPD<missing VAR>I acceptor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204364, 204364)
 In the dark, these measurements reveal that PD<missing VAR>I-based OPVs have agreater degree of recombination in comparison to fullerene-based OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204379, 204379)
 In the dark, these measurements reveal that PD<missing VAR>I-based OPVs have agreater degree of recombination in comparison to fullerene-based OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204381, 204381)
 In the dark, these measurements reveal that PD<missing VAR>I-based OPVs have agreater degree of recombination in comparison to fullerene-based OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204385, 204386)
 In the dark, these measurements reveal that PD<missing VAR>I-based OPVs have agreater degree of recombination in comparison to fullerene-based OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204412, 204413)
 In the dark, these measurements reveal that PD<missing VAR>I-based OPVs have agreater degree of recombination in comparison to fullerene-based OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204513, 204514)
 Under illumination, 1/f<missing VAR> noise increases byapproximately four orders of magnitude for the fullerene-based OPVs and threeorders of magnitude for the PD<missing VAR>I-based OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204532, 204532)
 Under illumination, 1/f<missing VAR> noise increases byapproximately four orders of magnitude for the fullerene-based OPVs and threeorders of magnitude for the PD<missing VAR>I-based OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204534, 204534)
 Under illumination, 1/f<missing VAR> noise increases byapproximately four orders of magnitude for the fullerene-based OPVs and threeorders of magnitude for the PD<missing VAR>I-based OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors|Kyle A. Luck,Vinod K. Sangwan,Patrick E. Hartnett,Heather N. Arnold,Michael R. Wasielewski,Tobin J. Marks,Mark C. Hersam###
(204538, 204539)
 Under illumination, 1/f<missing VAR> noise increases byapproximately four orders of magnitude for the fullerene-based OPVs and threeorders of magnitude for the PD<missing VAR>I-based OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Demonstration of a novel dispersive spectral splitting optical element for cost- effective photovoltaic conversion|Carlo Maragliano,Tim Milakovich,Matteo Bronzoni,Stefano Rampino,Eugene A. Fitzgerald,Matteo Chiesa,Marco Stefancich###
(204696, 204696)
 In this letter we report the preliminary validation of a low-cost paradigmfor photovoltaic power generation that utilizes a prismatic Fresnel-like lensto simultaneously concentrate and separate sunlight into continuous laterallyspaced spectral bands, which are then fed into spectrally matchedsingle-junction photovoltaic cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 90, '%', 3],[325.0, 51, '%', 5],[330.0, 64, '%', 5]

VNI
###Demonstration of a novel dispersive spectral splitting optical element for cost- effective photovoltaic conversion|Carlo Maragliano,Tim Milakovich,Matteo Bronzoni,Stefano Rampino,Eugene A. Fitzgerald,Matteo Chiesa,Marco Stefancich###
(204911, 204913)
 We report an average optical transmittance of  90% over theVNIR<missing VAR> range with spectral separation in excellent agreement with oursimulations.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 90, '%', 0],[108.0, 51, '%', 2],[113.0, 64, '%', 2]

GaAsP
###Demonstration of a novel dispersive spectral splitting optical element for cost- effective photovoltaic conversion|Carlo Maragliano,Tim Milakovich,Matteo Bronzoni,Stefano Rampino,Eugene A. Fitzgerald,Matteo Chiesa,Marco Stefancich###
(204955, 204957)
 Finally, two prototype systems were tested one with GaAsP andc<missing VAR>-Si photovoltaic devices and one with a pair of copper indium gallium selenidebased solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 90, '%', 1],[64.0, 51, '%', 1],[69.0, 64, '%', 1]

Si
###Demonstration of a novel dispersive spectral splitting optical element for cost- effective photovoltaic conversion|Carlo Maragliano,Tim Milakovich,Matteo Bronzoni,Stefano Rampino,Eugene A. Fitzgerald,Matteo Chiesa,Marco Stefancich###
(204964, 204964)
 Finally, two prototype systems were tested one with GaAsP andc<missing VAR>-Si photovoltaic devices and one with a pair of copper indium gallium selenidebased solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 90, '%', 1],[57.0, 51, '%', 1],[62.0, 64, '%', 1]

Ds
###General point dipole theory for periodic metasurfaces: magnetoelectric scattering lattices coupled to planar photonic structures|Yuntian Chen,A. Femius Koenderink###
(205218, 205218)
 We study semi-analytically the light emission and absorption properties ofarbitrary stratified photonic structures with embedded two-dimensionalmagnetoelectric point scattering lattices, as used in recent plasmon-enhancedLEDs and solar cells.
EXCEPTION 3: IndexError for Ds
Ag
[76.0, 2, 'D', 1]

MoS2
###Light Generation and Harvesting in a Van der Waals Heterostructure|Oriol Lopez-Sanchez,Esther Alarcon Llado,Volodymyr Koman,Anna Fontcuberta i Morral,Aleksandra Radenovic,Andras Kis###
(205735, 205737)
Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 havebeen proposed as promising channel materials for field-effect transistors(FE<missing VAR>Ts).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 4, '%', 6]

WSe2
###Light Generation and Harvesting in a Van der Waals Heterostructure|Oriol Lopez-Sanchez,Esther Alarcon Llado,Volodymyr Koman,Anna Fontcuberta i Morral,Aleksandra Radenovic,Andras Kis###
(205741, 205743)
Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 havebeen proposed as promising channel materials for field-effect transistors(FE<missing VAR>Ts).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 4, '%', 6]

F
###Light Generation and Harvesting in a Van der Waals Heterostructure|Oriol Lopez-Sanchez,Esther Alarcon Llado,Volodymyr Koman,Anna Fontcuberta i Morral,Aleksandra Radenovic,Andras Kis###
(205770, 205770)
Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 havebeen proposed as promising channel materials for field-effect transistors(FE<missing VAR>Ts).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 4, '%', 6]

MoS2
###Light Generation and Harvesting in a Van der Waals Heterostructure|Oriol Lopez-Sanchez,Esther Alarcon Llado,Volodymyr Koman,Anna Fontcuberta i Morral,Aleksandra Radenovic,Andras Kis###
(205848, 205850)
 Due to quantum mechanicalconfinement, the band gap in monolayer MoS2 is direct in nature, leading to astrong interaction with light that can be exploited for buildingphototransistors and ultrasensitive photodetectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 4, '%', 4]

MoS2
###Light Generation and Harvesting in a Van der Waals Heterostructure|Oriol Lopez-Sanchez,Esther Alarcon Llado,Volodymyr Koman,Anna Fontcuberta i Morral,Aleksandra Radenovic,Andras Kis###
(205939, 205941)
 Here, we report on therealization of light-emitting diodes based on vertical heterojunctions composedof n<missing VAR>-type monolayer MoS2 and p<missing VAR>-type silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 4, '%', 3]

W
###Investigation and modeling of photocurrent collection process in multiple quantum well solar cells|Kasidit Toprasertpong,Tomoyuki Inoue,Yoshiaki Nakano,Masakazu Sugiyama###
(206252, 206252)
 Here, weanalyzed the spectral response and the photocarrier collection mechanism ofp-i-n<missing VAR> multiple quantum well (MQW) solar cells using the effective-mobilitymodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Investigation and modeling of photocurrent collection process in multiple quantum well solar cells|Kasidit Toprasertpong,Tomoyuki Inoue,Yoshiaki Nakano,Masakazu Sugiyama###
(206465, 206465)
 This can accurately explainthe photocurrent behavior in cells with high background doping, backgroundillumination, and different MQW positions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(206975, 206976)
Perovskite PV-powered R<missing VAR>FID<missing VAR> enabling low-cost self-powered IoT<missing VAR> sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 4, 'm', 5],[281.0, 10.1, '%', 6],[303.0, 4.3, 'V', 6],[315.0, 1.06, 'cm', 6],[319.0, 1, 'sun', 6],[328.0, 1.5, 'G', 6]

FI
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(206981, 206982)
Perovskite PV-powered R<missing VAR>FID<missing VAR> enabling low-cost self-powered IoT<missing VAR> sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 4, 'm', 5],[275.0, 10.1, '%', 6],[297.0, 4.3, 'V', 6],[309.0, 1.06, 'cm', 6],[313.0, 1, 'sun', 6],[322.0, 1.5, 'G', 6]

(PV)
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207003, 207006)
 Photovoltaic (PV) cells have the potential to serve as on-board power sourcesfor low-power IoT<missing VAR> devices.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 4, 'm', 4],[251.0, 10.1, '%', 5],[273.0, 4.3, 'V', 5],[285.0, 1.06, 'cm', 5],[289.0, 1, 'sun', 5],[298.0, 1.5, 'G', 5]

F
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207073, 207073)
 Here, we explore the use of perovskite solar cellsto power Radio Frequency (R<missing VAR>F) backscatter-based IoT<missing VAR> devices with a few muWpower demand.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 4, 'm', 3],[184.0, 10.1, '%', 4],[206.0, 4.3, 'V', 4],[218.0, 1.06, 'cm', 4],[222.0, 1, 'sun', 4],[231.0, 1.5, 'G', 4]

W
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207092, 207092)
 Here, we explore the use of perovskite solar cellsto power Radio Frequency (R<missing VAR>F) backscatter-based IoT<missing VAR> devices with a few muWpower demand.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 4, 'm', 3],[165.0, 10.1, '%', 4],[187.0, 4.3, 'V', 4],[199.0, 1.06, 'cm', 4],[203.0, 1, 'sun', 4],[212.0, 1.5, 'G', 4]

FI
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207180, 207181)
 Perovskites are suitable for low-cost, high-performance,low-temperature processing, and flexible light energy harvesting that hold thepossibility to significantly extend the range and lifetime of currentbackscatter techniques such as Radio Frequency Identification (R<missing VAR>FID).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 4, 'm', 2],[76.0, 10.1, '%', 3],[98.0, 4.3, 'V', 3],[110.0, 1.06, 'cm', 3],[114.0, 1, 'sun', 3],[123.0, 1.5, 'G', 3]

PV
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207265, 207266)
 We use a 10.1%efficient perovskite PV module generating an output voltage of 4.3 V with anactive area of 1.06 cm2 under 1 sun illumination, with AM<missing VAR> 1.5G spectrum, topower a commercial off-the-shelf R<missing VAR>FID<missing VAR> IC, requiring 10 - 45 muW of power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4, 'm', 1],[8.0, 10.1, '%', 0],[13.0, 4.3, 'V', 0],[25.0, 1.06, 'cm', 0],[29.0, 1, 'sun', 0],[38.0, 1.5, 'G', 0]

FI
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207325, 207326)
 We use a 10.1%efficient perovskite PV module generating an output voltage of 4.3 V with anactive area of 1.06 cm2 under 1 sun illumination, with AM<missing VAR> 1.5G spectrum, topower a commercial off-the-shelf R<missing VAR>FID<missing VAR> IC, requiring 10 - 45 muW of power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 4, 'm', 1],[68.0, 10.1, '%', 0],[46.0, 4.3, 'V', 0],[34.0, 1.06, 'cm', 0],[30.0, 1, 'sun', 0],[21.0, 1.5, 'G', 0]

IC
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207329, 207330)
 We use a 10.1%efficient perovskite PV module generating an output voltage of 4.3 V with anactive area of 1.06 cm2 under 1 sun illumination, with AM<missing VAR> 1.5G spectrum, topower a commercial off-the-shelf R<missing VAR>FID<missing VAR> IC, requiring 10 - 45 muW of power.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 4, 'm', 1],[72.0, 10.1, '%', 0],[50.0, 4.3, 'V', 0],[38.0, 1.06, 'cm', 0],[34.0, 1, 'sun', 0],[25.0, 1.5, 'G', 0]

W
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207342, 207342)
 We use a 10.1%efficient perovskite PV module generating an output voltage of 4.3 V with anactive area of 1.06 cm2 under 1 sun illumination, with AM<missing VAR> 1.5G spectrum, topower a commercial off-the-shelf R<missing VAR>FID<missing VAR> IC, requiring 10 - 45 muW of power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 4, 'm', 1],[85.0, 10.1, '%', 0],[63.0, 4.3, 'V', 0],[51.0, 1.06, 'cm', 0],[47.0, 1, 'sun', 0],[38.0, 1.5, 'G', 0]

F
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207475, 207475)
 Our evaluation of theprototype suggests that perovskite photovoltaic cells are able to meet theenergy needs to enable fully autonomous low-power R<missing VAR>F backscatter applicationsof the future.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 4, 'm', 3],[218.0, 10.1, '%', 2],[196.0, 4.3, 'V', 2],[184.0, 1.06, 'cm', 2],[180.0, 1, 'sun', 2],[171.0, 1.5, 'G', 2]

FI
###Perovskite PV-powered RFID: enabling low-cost self-powered IoT sensors|Sai Nithin R. Kantareddy,Ian Mathews,Shijing Sun,Mariya Layurova,Janak Thapa,Juan-Pablo Correa-Baena,Rahul Bhattacharyya Tonio Buonassisi,Sanjay E. Sarma,Ian Marius Peters###
(207538, 207539)
 We conclude with an outlook into a range of applications that weenvision to leverage the synergies offered by combining perovskitephotovoltaics and R<missing VAR>FID<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 4, 'm', 4],[281.0, 10.1, '%', 3],[259.0, 4.3, 'V', 3],[247.0, 1.06, 'cm', 3],[243.0, 1, 'sun', 3],[234.0, 1.5, 'G', 3]

PC
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207588, 207589)
 Hybrid perovskite solar cells, with their power conversion efficiency (PCE)exceeding 22%, have been representing a revolutionary concept for future energypower generation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'D', 1],[7.0, 22, '%', 0],[44.0, 10, 'Emerging', 1],[51.0, 2016, ',', 1],[125.0, 2, 'D', 3],[220.0, 2, 'D', 4],[229.0, 14.6, '%', 4],[260.0, 12.9, '%', 4],[299.0, 10, 'x', 5],[337.0, 11.2, '%', 5],[366.0, 5, ',', 6]

H2
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207723, 207724)
 It consists of a 2D (HOOC(CH2)2NH3)2PbI4,anchored at the oxide substrate, that templates the growth of a highly ordered3D<missing VAR> CH3NH3PbI3 perovskite stabilizing in the orthorhombic phase, even at roomtemperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 2, 'D', 4],[127.0, 22, '%', 3],[90.0, 10, 'Emerging', 2],[83.0, 2016, ',', 2],[9.0, 2, 'D', 0],[85.0, 2, 'D', 1],[94.0, 14.6, '%', 1],[125.0, 12.9, '%', 1],[164.0, 10, 'x', 2],[202.0, 11.2, '%', 2],[231.0, 5, ',', 3]

H3
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207728, 207729)
 It consists of a 2D (HOOC(CH2)2NH3)2PbI4,anchored at the oxide substrate, that templates the growth of a highly ordered3D<missing VAR> CH3NH3PbI3 perovskite stabilizing in the orthorhombic phase, even at roomtemperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 2, 'D', 4],[132.0, 22, '%', 3],[95.0, 10, 'Emerging', 2],[88.0, 2016, ',', 2],[14.0, 2, 'D', 0],[80.0, 2, 'D', 1],[89.0, 14.6, '%', 1],[120.0, 12.9, '%', 1],[159.0, 10, 'x', 2],[197.0, 11.2, '%', 2],[226.0, 5, ',', 3]

PbI4
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207732, 207734)
 It consists of a 2D (HOOC(CH2)2NH3)2PbI4,anchored at the oxide substrate, that templates the growth of a highly ordered3D<missing VAR> CH3NH3PbI3 perovskite stabilizing in the orthorhombic phase, even at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2, 'D', 4],[136.0, 22, '%', 3],[99.0, 10, 'Emerging', 2],[92.0, 2016, ',', 2],[18.0, 2, 'D', 0],[75.0, 2, 'D', 1],[84.0, 14.6, '%', 1],[115.0, 12.9, '%', 1],[154.0, 10, 'x', 2],[192.0, 11.2, '%', 2],[221.0, 5, ',', 3]

CH3NH3PbI3
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207769, 207777)
 It consists of a 2D (HOOC(CH2)2NH3)2PbI4,anchored at the oxide substrate, that templates the growth of a highly ordered3D<missing VAR> CH3NH3PbI3 perovskite stabilizing in the orthorhombic phase, even at roomtemperature.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 2, 'D', 4],[173.0, 22, '%', 3],[136.0, 10, 'Emerging', 2],[129.0, 2016, ',', 2],[55.0, 2, 'D', 0],[32.0, 2, 'D', 1],[41.0, 14.6, '%', 1],[72.0, 12.9, '%', 1],[111.0, 10, 'x', 2],[149.0, 11.2, '%', 2],[178.0, 5, ',', 3]

PC
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207821, 207822)
 The unique and exceptional 2D/3D<missing VAR> structure yields 14.6% PCE<missing VAR> insolar cells with Spiro-OMeTAD and Au, and 12.9% PCE<missing VAR> in hole-conductor freearchitecture.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 2, 'D', 5],[225.0, 22, '%', 4],[188.0, 10, 'Emerging', 3],[181.0, 2016, ',', 3],[107.0, 2, 'D', 1],[12.0, 2, 'D', 0],[3.0, 14.6, '%', 0],[27.0, 12.9, '%', 0],[66.0, 10, 'x', 1],[104.0, 11.2, '%', 1],[133.0, 5, ',', 2]

O
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207836, 207836)
 The unique and exceptional 2D/3D<missing VAR> structure yields 14.6% PCE<missing VAR> insolar cells with Spiro-OMeTAD and Au, and 12.9% PCE<missing VAR> in hole-conductor freearchitecture.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 2, 'D', 5],[240.0, 22, '%', 4],[203.0, 10, 'Emerging', 3],[196.0, 2016, ',', 3],[122.0, 2, 'D', 1],[27.0, 2, 'D', 0],[18.0, 14.6, '%', 0],[13.0, 12.9, '%', 0],[52.0, 10, 'x', 1],[90.0, 11.2, '%', 1],[119.0, 5, ',', 2]

Au
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207844, 207844)
 The unique and exceptional 2D/3D<missing VAR> structure yields 14.6% PCE<missing VAR> insolar cells with Spiro-OMeTAD and Au, and 12.9% PCE<missing VAR> in hole-conductor freearchitecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 2, 'D', 5],[248.0, 22, '%', 4],[211.0, 10, 'Emerging', 3],[204.0, 2016, ',', 3],[130.0, 2, 'D', 1],[35.0, 2, 'D', 0],[26.0, 14.6, '%', 0],[5.0, 12.9, '%', 0],[44.0, 10, 'x', 1],[82.0, 11.2, '%', 1],[111.0, 5, ',', 2]

PC
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207852, 207853)
 The unique and exceptional 2D/3D<missing VAR> structure yields 14.6% PCE<missing VAR> insolar cells with Spiro-OMeTAD and Au, and 12.9% PCE<missing VAR> in hole-conductor freearchitecture.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 2, 'D', 5],[256.0, 22, '%', 4],[219.0, 10, 'Emerging', 3],[212.0, 2016, ',', 3],[138.0, 2, 'D', 1],[43.0, 2, 'D', 0],[34.0, 14.6, '%', 0],[3.0, 12.9, '%', 0],[35.0, 10, 'x', 1],[73.0, 11.2, '%', 1],[102.0, 5, ',', 2]

PC
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207929, 207930)
 Aiming at the up-scaling of this technology, we realize 10x10 cm2large-area photovoltaic modules by a low-cost, fully printable,industrial-scale process delivering 11.2% PCE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 2, 'D', 6],[333.0, 22, '%', 5],[296.0, 10, 'Emerging', 4],[289.0, 2016, ',', 4],[215.0, 2, 'D', 2],[120.0, 2, 'D', 1],[111.0, 14.6, '%', 1],[80.0, 12.9, '%', 1],[41.0, 10, 'x', 0],[3.0, 11.2, '%', 0],[25.0, 5, ',', 1]

PC
###Ultra-stable 2D/3D hybrid perovskite photovoltaic module|Giulia Grancini,Cristina Roldán-Carmona,Iwan Zimmermann,David Martineau,Stéphanie Narbey,Frédéric Oswald,Mohammad Khaja Nazeeruddin###
(207949, 207950)
 We demonstrate a recordstability in the PCE<missing VAR> of 5,000 hours, setting the direction for the newgeneration of carbon free energy.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 2, 'D', 7],[353.0, 22, '%', 6],[316.0, 10, 'Emerging', 5],[309.0, 2016, ',', 5],[235.0, 2, 'D', 3],[140.0, 2, 'D', 2],[131.0, 14.6, '%', 2],[100.0, 12.9, '%', 2],[61.0, 10, 'x', 1],[23.0, 11.2, '%', 1],[5.0, 5, ',', 0]

P
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208030, 208030)
 Perovskite photovoltaics (PVs) have attracted attention because of theirexcellent power conversion efficiency (PCE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 0.09, 'cm', 3],[139.0, 0.5, 'cm', 3],[184.0, 13, '%', 3],[205.0, 80, '%', 3],[274.0, 20, '%', 5],[374.0, 100, '%', 6],[390.0, 1000, 'hours', 6]

PC
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208056, 208057)
 Perovskite photovoltaics (PVs) have attracted attention because of theirexcellent power conversion efficiency (PCE).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.09, 'cm', 3],[112.0, 0.5, 'cm', 3],[157.0, 13, '%', 3],[178.0, 80, '%', 3],[247.0, 20, '%', 5],[347.0, 100, '%', 6],[363.0, 1000, 'hours', 6]

PV
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208075, 208076)
 Critical issues related to largearea PV performance, reliability and lifetime need to be addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.09, 'cm', 2],[93.0, 0.5, 'cm', 2],[138.0, 13, '%', 2],[159.0, 80, '%', 2],[228.0, 20, '%', 4],[328.0, 100, '%', 5],[344.0, 1000, 'hours', 5]

P
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208136, 208136)
 Here, weshow that doped metal oxides can provide ideal electron selectivity, improvedreliability and stability for perovskite PVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.09, 'cm', 1],[33.0, 0.5, 'cm', 1],[78.0, 13, '%', 1],[99.0, 80, '%', 1],[168.0, 20, '%', 3],[268.0, 100, '%', 4],[284.0, 1000, 'hours', 4]

P
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208152, 208152)
 We report p-i-n<missing VAR> perovskite PVswith device areas ranging from 0.09cm2 to 0.5cm2 incorporating a thick aluminumdoped zinc oxide (AZ<missing VAR>O) electron selective contact with hysteresis-free PCE<missing VAR> ofover 13% and high fill factor values in the range of 80%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.09, 'cm', 0],[17.0, 0.5, 'cm', 0],[62.0, 13, '%', 0],[83.0, 80, '%', 0],[152.0, 20, '%', 2],[252.0, 100, '%', 3],[268.0, 1000, 'hours', 3]

O
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208190, 208190)
 We report p-i-n<missing VAR> perovskite PVswith device areas ranging from 0.09cm2 to 0.5cm2 incorporating a thick aluminumdoped zinc oxide (AZ<missing VAR>O) electron selective contact with hysteresis-free PCE<missing VAR> ofover 13% and high fill factor values in the range of 80%.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.09, 'cm', 0],[21.0, 0.5, 'cm', 0],[24.0, 13, '%', 0],[45.0, 80, '%', 0],[114.0, 20, '%', 2],[214.0, 100, '%', 3],[230.0, 1000, 'hours', 3]

PC
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208205, 208206)
 We report p-i-n<missing VAR> perovskite PVswith device areas ranging from 0.09cm2 to 0.5cm2 incorporating a thick aluminumdoped zinc oxide (AZ<missing VAR>O) electron selective contact with hysteresis-free PCE<missing VAR> ofover 13% and high fill factor values in the range of 80%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.09, 'cm', 0],[36.0, 0.5, 'cm', 0],[8.0, 13, '%', 0],[29.0, 80, '%', 0],[98.0, 20, '%', 2],[198.0, 100, '%', 3],[214.0, 1000, 'hours', 3]

O
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208241, 208241)
 AZ<missing VAR>O provides suitableenergy levels for carrier selectivity, neutralizes the presence of pinholes andprovides intimate interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.09, 'cm', 1],[72.0, 0.5, 'cm', 1],[27.0, 13, '%', 1],[6.0, 80, '%', 1],[63.0, 20, '%', 1],[163.0, 100, '%', 2],[179.0, 1000, 'hours', 2]

O
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208285, 208285)
 Devices using AZ<missing VAR>O exhibit an average PCE<missing VAR> increaseof over 20% compared with the devices without AZ<missing VAR>O and maintain the high PCE<missing VAR> forthe larger area devices reported.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.09, 'cm', 2],[116.0, 0.5, 'cm', 2],[71.0, 13, '%', 2],[50.0, 80, '%', 2],[19.0, 20, '%', 0],[119.0, 100, '%', 1],[135.0, 1000, 'hours', 1]

PC
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208293, 208294)
 Devices using AZ<missing VAR>O exhibit an average PCE<missing VAR> increaseof over 20% compared with the devices without AZ<missing VAR>O and maintain the high PCE<missing VAR> forthe larger area devices reported.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 0.09, 'cm', 2],[124.0, 0.5, 'cm', 2],[79.0, 13, '%', 2],[58.0, 80, '%', 2],[10.0, 20, '%', 0],[110.0, 100, '%', 1],[126.0, 1000, 'hours', 1]

O
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208319, 208319)
 Devices using AZ<missing VAR>O exhibit an average PCE<missing VAR> increaseof over 20% compared with the devices without AZ<missing VAR>O and maintain the high PCE<missing VAR> forthe larger area devices reported.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.09, 'cm', 2],[150.0, 0.5, 'cm', 2],[105.0, 13, '%', 2],[84.0, 80, '%', 2],[15.0, 20, '%', 0],[85.0, 100, '%', 1],[101.0, 1000, 'hours', 1]

PC
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208329, 208330)
 Devices using AZ<missing VAR>O exhibit an average PCE<missing VAR> increaseof over 20% compared with the devices without AZ<missing VAR>O and maintain the high PCE<missing VAR> forthe larger area devices reported.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.09, 'cm', 2],[160.0, 0.5, 'cm', 2],[115.0, 13, '%', 2],[94.0, 80, '%', 2],[25.0, 20, '%', 0],[74.0, 100, '%', 1],[90.0, 1000, 'hours', 1]

ISOS
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208375, 208378)
 Furthermore, the device stability of p-i-n<missing VAR>perovskite solar cells under the ISOS-D<missing VAR>-1 is enhanced when AZ<missing VAR>O is used, andmaintains 100% of the initial PCE<missing VAR> for over 1000 hours of exposure when AZ<missing VAR>O/Auis used as the top electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 0.09, 'cm', 3],[206.0, 0.5, 'cm', 3],[161.0, 13, '%', 3],[140.0, 80, '%', 3],[71.0, 20, '%', 1],[26.0, 100, '%', 0],[42.0, 1000, 'hours', 0]

O
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208392, 208392)
 Furthermore, the device stability of p-i-n<missing VAR>perovskite solar cells under the ISOS-D<missing VAR>-1 is enhanced when AZ<missing VAR>O is used, andmaintains 100% of the initial PCE<missing VAR> for over 1000 hours of exposure when AZ<missing VAR>O/Auis used as the top electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0.09, 'cm', 3],[223.0, 0.5, 'cm', 3],[178.0, 13, '%', 3],[157.0, 80, '%', 3],[88.0, 20, '%', 1],[12.0, 100, '%', 0],[28.0, 1000, 'hours', 0]

PC
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208413, 208414)
 Furthermore, the device stability of p-i-n<missing VAR>perovskite solar cells under the ISOS-D<missing VAR>-1 is enhanced when AZ<missing VAR>O is used, andmaintains 100% of the initial PCE<missing VAR> for over 1000 hours of exposure when AZ<missing VAR>O/Auis used as the top electrode.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 0.09, 'cm', 3],[244.0, 0.5, 'cm', 3],[199.0, 13, '%', 3],[178.0, 80, '%', 3],[109.0, 20, '%', 1],[9.0, 100, '%', 0],[6.0, 1000, 'hours', 0]

O/Au
###Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides|Achilleas Savva,Ignasi Burgues-Ceballos,Stelios A. Choulis###
(208430, 208432)
 Furthermore, the device stability of p-i-n<missing VAR>perovskite solar cells under the ISOS-D<missing VAR>-1 is enhanced when AZ<missing VAR>O is used, andmaintains 100% of the initial PCE<missing VAR> for over 1000 hours of exposure when AZ<missing VAR>O/Auis used as the top electrode.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[265.0, 0.09, 'cm', 3],[261.0, 0.5, 'cm', 3],[216.0, 13, '%', 3],[195.0, 80, '%', 3],[126.0, 20, '%', 1],[26.0, 100, '%', 0],[10.0, 1000, 'hours', 0]

InAs/GaAs
###Giant Photocurrent Enhancement by Coulomb Interaction in a Single Quantum Dot for Energy Harvesting|Kai Peng,Shiyao Wu,Xin Xie,Jingnan Yang,Chenjiang Qian,Feilong Song,Sibai Sun,Jianchen Dang,Yang Yu,Shushu Shi,Jiongji He,Xiulai Xu###
(208636, 208640)
 Here, we report on Coulomb-induced giant photocurrentenhancement of positive charged trions (emphX+) in a singleself-assembled InAs/GaAs quantum dot embedded in an emphn-i-Schottky deviceby high-resolution photocurrent (PC) spectroscopy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[207.0, 8.05, 'meV', 3]

(PC)
###Giant Photocurrent Enhancement by Coulomb Interaction in a Single Quantum Dot for Energy Harvesting|Kai Peng,Shiyao Wu,Xin Xie,Jingnan Yang,Chenjiang Qian,Feilong Song,Sibai Sun,Jianchen Dang,Yang Yu,Shushu Shi,Jiongji He,Xiulai Xu###
(208670, 208673)
 Here, we report on Coulomb-induced giant photocurrentenhancement of positive charged trions (emphX+) in a singleself-assembled InAs/GaAs quantum dot embedded in an emphn-i-Schottky deviceby high-resolution photocurrent (PC) spectroscopy.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 8.05, 'meV', 3]

PC
###Giant Photocurrent Enhancement by Coulomb Interaction in a Single Quantum Dot for Energy Harvesting|Kai Peng,Shiyao Wu,Xin Xie,Jingnan Yang,Chenjiang Qian,Feilong Song,Sibai Sun,Jianchen Dang,Yang Yu,Shushu Shi,Jiongji He,Xiulai Xu###
(208759, 208760)
 This process brings the PC amplitude of emphX+ up to30 times larger than that of the neutral exciton.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 8.05, 'meV', 1]

P
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209053, 209053)
 Herein, we demonstratefirst a three-order reduction of the shunt loss mechanism in planarmethylammonium lead iodide perovskite solar cells by replacing the commonlyused hole transport layerpoly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT<missing VAR>PSS) with abetter hole-selective polyarylamine.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, ',', 0],[84.0, 530, 'mV', 1],[132.0, 2, 'h', 2]

O
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209056, 209056)
 Herein, we demonstratefirst a three-order reduction of the shunt loss mechanism in planarmethylammonium lead iodide perovskite solar cells by replacing the commonlyused hole transport layerpoly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT<missing VAR>PSS) with abetter hole-selective polyarylamine.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, ',', 0],[81.0, 530, 'mV', 1],[129.0, 2, 'h', 2]

S
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209060, 209060)
 Herein, we demonstratefirst a three-order reduction of the shunt loss mechanism in planarmethylammonium lead iodide perovskite solar cells by replacing the commonlyused hole transport layerpoly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (PEDOT<missing VAR>PSS) with abetter hole-selective polyarylamine.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 3, ',', 0],[77.0, 530, 'mV', 1],[125.0, 2, 'h', 2]

As
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209077, 209077)
 As a result, these cells exhibit superioroperation under reduced light conditions, which we demonstrate for the extremecase of moonlight irradiance, at which open-circuit voltages of 530 mV canstill be obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3, ',', 1],[60.0, 530, 'mV', 0],[108.0, 2, 'h', 1]

VOC
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209165, 209167)
 By the shunt removal we also observe the VOC to drop to zeroafter as long as 2 h after the light has been switched off.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 3, ',', 2],[28.0, 530, 'mV', 1],[18.0, 2, 'h', 0]

P
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209224, 209224)
 Second, at higherillumination intensities the dominant losses in the PEDOT<missing VAR>PSS-based cell areascribed to surface recombination and are also proven to be substantiallyminimized by instead employing the polyarylamine.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 3, ',', 3],[87.0, 530, 'mV', 2],[39.0, 2, 'h', 1]

O
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209227, 209227)
 Second, at higherillumination intensities the dominant losses in the PEDOT<missing VAR>PSS-based cell areascribed to surface recombination and are also proven to be substantiallyminimized by instead employing the polyarylamine.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3, ',', 3],[90.0, 530, 'mV', 2],[42.0, 2, 'h', 1]

PSS
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209229, 209231)
 Second, at higherillumination intensities the dominant losses in the PEDOT<missing VAR>PSS-based cell areascribed to surface recombination and are also proven to be substantiallyminimized by instead employing the polyarylamine.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 3, ',', 3],[92.0, 530, 'mV', 2],[44.0, 2, 'h', 1]

P
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209323, 209323)
 We attribute the reducedshunt and surface recombination to the far better suited semiconductorcharacter of the polyarylamine, compared to that of PEDOT<missing VAR>PSS, efficientlyblocking electrons from recombining at this electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 3, ',', 4],[186.0, 530, 'mV', 3],[138.0, 2, 'h', 2]

O
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209326, 209326)
 We attribute the reducedshunt and surface recombination to the far better suited semiconductorcharacter of the polyarylamine, compared to that of PEDOT<missing VAR>PSS, efficientlyblocking electrons from recombining at this electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 3, ',', 4],[189.0, 530, 'mV', 3],[141.0, 2, 'h', 2]

PSS
###Removing Leakage and Surface Recombination in Planar Perovskite Solar Cells|K. Tvingstedt,L. Gil-Escrig,C. Momblona,P. Rieder,D. Kiermasch,M. Sessolo,A. Baumann,H. J. Bolink,V. Dyakonov###
(209328, 209330)
 We attribute the reducedshunt and surface recombination to the far better suited semiconductorcharacter of the polyarylamine, compared to that of PEDOT<missing VAR>PSS, efficientlyblocking electrons from recombining at this electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 3, ',', 4],[191.0, 530, 'mV', 3],[143.0, 2, 'h', 2]

Cs
###Photo-effect on ion transport in mixed cation and halide perovskites and implications for photo de-mixing|Gee Yeong Kim,Alessandro Senocrate,Yaru Wang,Davide Moia,Joachim Maier###
(209678, 209678)
Specifically, we investigate various cation and anion substitutions (Cs; FA;Br) with a special eye on their photo-ionic effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Photo-effect on ion transport in mixed cation and halide perovskites and implications for photo de-mixing|Gee Yeong Kim,Alessandro Senocrate,Yaru Wang,Davide Moia,Joachim Maier###
(209681, 209681)
Specifically, we investigate various cation and anion substitutions (Cs; FA;Br) with a special eye on their photo-ionic effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Photo-effect on ion transport in mixed cation and halide perovskites and implications for photo de-mixing|Gee Yeong Kim,Alessandro Senocrate,Yaru Wang,Davide Moia,Joachim Maier###
(209686, 209686)
Specifically, we investigate various cation and anion substitutions (Cs; FA;Br) with a special eye on their photo-ionic effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Photo-effect on ion transport in mixed cation and halide perovskites and implications for photo de-mixing|Gee Yeong Kim,Alessandro Senocrate,Yaru Wang,Davide Moia,Joachim Maier###
(209745, 209745)
As far as the photo-ionic effect is concerned, we find that the choice of thehalide is of crucial importance, while the cationic substitutions are lessrelevant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Optical Management Techniques for Organic Solar Cells|Adharsh Rajagopal###
(209910, 209910)
 In this thesis, two different optical management techniques for organicsbased solar cells are explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, -25, '%', 5],[431.0, 15, '%', 10]

OP
###Optical Management Techniques for Organic Solar Cells|Adharsh Rajagopal###
(209972, 209973)
 The first part is focused on the development ofa textured rear reflector for OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, -25, '%', 4],[368.0, 15, '%', 9]

OP
###Optical Management Techniques for Organic Solar Cells|Adharsh Rajagopal###
(210176, 210177)
 Thesecond part is focused on improving the effectiveness of MLA incorporation inOPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, -25, '%', 1],[164.0, 15, '%', 4]

I
###Optical Management Techniques for Organic Solar Cells|Adharsh Rajagopal###
(210381, 210381)
 Approximately, 15% enhancement in short-circuit current density wasachieved by using MLA directly on the transparent electrode in IT<missing VAR>O-freedevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, -25, '%', 5],[40.0, 15, '%', 0]

O
###Optical Management Techniques for Organic Solar Cells|Adharsh Rajagopal###
(210383, 210383)
 Approximately, 15% enhancement in short-circuit current density wasachieved by using MLA directly on the transparent electrode in IT<missing VAR>O-freedevices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, -25, '%', 5],[42.0, 15, '%', 0]

F
###DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells: role of halide mixing and light trapping technique|Mohaddeseh Saffari,Mohammad Ali Mohebpour,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(210407, 210407)
DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells role of halide mixing and light trapping technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 0, ',', 3],[274.0, 1, ',', 3],[276.0, 2, ',', 3],[466.0, 83.13, '%', 5]

CH3NH3PbI3-x
###DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells: role of halide mixing and light trapping technique|Mohaddeseh Saffari,Mohammad Ali Mohebpour,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(210416, 210426)
DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells role of halide mixing and light trapping technique.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[253.0, 0, ',', 3],[255.0, 1, ',', 3],[257.0, 2, ',', 3],[447.0, 83.13, '%', 5]

CH3NH3PbI3
###DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells: role of halide mixing and light trapping technique|Mohaddeseh Saffari,Mohammad Ali Mohebpour,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(210556, 210564)
 For this reason, first, we have studiedstructural and optical properties of organic-inorganic hybrid halide perovskiteCH3NH3PbI3 and the compounds doped by chlorine halogen CH3NH3PbI3-xClx in thecubic phase by using density functional theory (DFT).
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0, ',', 1],[117.0, 1, ',', 1],[119.0, 2, ',', 1],[309.0, 83.13, '%', 3]

CH3NH3PbI3-x
###DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells: role of halide mixing and light trapping technique|Mohaddeseh Saffari,Mohammad Ali Mohebpour,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(210580, 210590)
 For this reason, first, we have studiedstructural and optical properties of organic-inorganic hybrid halide perovskiteCH3NH3PbI3 and the compounds doped by chlorine halogen CH3NH3PbI3-xClx in thecubic phase by using density functional theory (DFT).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[89.0, 0, ',', 1],[91.0, 1, ',', 1],[93.0, 2, ',', 1],[283.0, 83.13, '%', 3]

CH3NH3PbI3-x
###DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells: role of halide mixing and light trapping technique|Mohaddeseh Saffari,Mohammad Ali Mohebpour,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(210658, 210668)
 Then, we investigate thelight absorption efficiency and optical current density of the single-junctionperovskite solar cell CH3NH3PbI3-xClx for the values (x<missing VAR>0,1,2,3) by utilizingoptical constants (n,k) resulted from these calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 0, ',', 0],[13.0, 1, ',', 0],[15.0, 2, ',', 0],[205.0, 83.13, '%', 2]

CH3NH3PbI3-x
###DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells: role of halide mixing and light trapping technique|Mohaddeseh Saffari,Mohammad Ali Mohebpour,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(210735, 210745)
 The results suggestthat increasing the amount of chlorine in the CH3NH3PbI3-xClx compound leads anincrease in bandgap energy, as well as a decrease in lattice constants andoptical properties like refractive index and extinction coefficient of thestructure.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[56.0, 0, ',', 1],[54.0, 1, ',', 1],[52.0, 2, ',', 1],[128.0, 83.13, '%', 1]

SiO2
###DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells: role of halide mixing and light trapping technique|Mohaddeseh Saffari,Mohammad Ali Mohebpour,Hamid Rahimpour Soleimani,Meysam Bagheri Tagani###
(210841, 210843)
 Also, the results obtained by simulation express that by takingadvantage of light trapping techniques of SiO2, a remarkable increase of lightabsorption will be achieved to the magnitude of 83.13%, which is noticeable.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 0, ',', 2],[160.0, 1, ',', 2],[158.0, 2, ',', 2],[30.0, 83.13, '%', 0]

AsP
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(210894, 210895)
Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AsP
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(210983, 210984)
 Herein, we report on the basis ofdensity functional calculations, phosphorene/AsP heterostructure could be apromising material for excitonic solar cells (X<missing VAR>SCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(211010, 211010)
 Herein, we report on the basis ofdensity functional calculations, phosphorene/AsP heterostructure could be apromising material for excitonic solar cells (X<missing VAR>SCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(211016, 211017)
 Our HSE<missing VAR>06 functionalcalculations show that the band gap of both phosphorene and AsP fall exactlyinto the optimum value range according to X<missing VAR>SCs requirement.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AsP
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(211044, 211045)
 Our HSE<missing VAR>06 functionalcalculations show that the band gap of both phosphorene and AsP fall exactlyinto the optimum value range according to X<missing VAR>SCs requirement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(211067, 211068)
 Our HSE<missing VAR>06 functionalcalculations show that the band gap of both phosphorene and AsP fall exactlyinto the optimum value range according to X<missing VAR>SCs requirement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(211123, 211123)
 The calculatedeffective mass of electrons and holes show anisotropic in nature with effectivemasses along Gamma-X<missing VAR> direction is lower than the Gamma-Y directionand hence the charge transport will be faster along Gamma-X<missing VAR> direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AsP
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(211199, 211200)
 Interestingly, phosphorene and AsPmonolayer forms a type-II band alignment which will enhance the separation ofphotogenerated charge carriers and hence the recombination rate will be lowerwhich can further improve its photo-conversion efficiency if one use it inX<missing VAR>SCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(211211, 211212)
 Interestingly, phosphorene and AsPmonolayer forms a type-II band alignment which will enhance the separation ofphotogenerated charge carriers and hence the recombination rate will be lowerwhich can further improve its photo-conversion efficiency if one use it inX<missing VAR>SCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Phosphorene-AsP Heterostructure as a Potential Excitonic Solar Cell Material - A First Principles Study|M. R. Ashwin Kishore,P. Ravindran###
(211282, 211283)
 Interestingly, phosphorene and AsPmonolayer forms a type-II band alignment which will enhance the separation ofphotogenerated charge carriers and hence the recombination rate will be lowerwhich can further improve its photo-conversion efficiency if one use it inX<missing VAR>SCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211316, 211318)
Novel Physical Vapor Deposition Approach to Hybrid Perovskites Growth of M<missing VAR>APbI3 Thin Films by R<missing VAR>F-Magnetron Sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 200, 'nm', 5]

F
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211327, 211327)
Novel Physical Vapor Deposition Approach to Hybrid Perovskites Growth of M<missing VAR>APbI3 Thin Films by R<missing VAR>F-Magnetron Sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 200, 'nm', 5]

CH3NH3PbI3
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211451, 211459)
 Here thesuccessful deposition of CH3NH3PbI3 (M<missing VAR>API) thin films by R<missing VAR>F-magnetronsputtering is reported, an industry-tested method to grow large area deviceswith precisely controlled stoichiometry.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 200, 'nm', 2]

I
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211465, 211465)
 Here thesuccessful deposition of CH3NH3PbI3 (M<missing VAR>API) thin films by R<missing VAR>F-magnetronsputtering is reported, an industry-tested method to grow large area deviceswith precisely controlled stoichiometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 200, 'nm', 2]

F
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211475, 211475)
 Here thesuccessful deposition of CH3NH3PbI3 (M<missing VAR>API) thin films by R<missing VAR>F-magnetronsputtering is reported, an industry-tested method to grow large area deviceswith precisely controlled stoichiometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 200, 'nm', 2]

PI
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211517, 211518)
 M<missing VAR>API films are grown starting from asingle-target made of CH3NH3I (M<missing VAR>AI) and PbI2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 200, 'nm', 1]

CH3NH3I
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211541, 211547)
 M<missing VAR>API films are grown starting from asingle-target made of CH3NH3I (M<missing VAR>AI) and PbI2.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0.1111111111111111,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 200, 'nm', 1]

I
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211552, 211552)
 M<missing VAR>API films are grown starting from asingle-target made of CH3NH3I (M<missing VAR>AI) and PbI2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 200, 'nm', 1]

PbI2
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211557, 211559)
 M<missing VAR>API films are grown starting from asingle-target made of CH3NH3I (M<missing VAR>AI) and PbI2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 200, 'nm', 1]

PbI2
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211586, 211588)
 Films are single-phase, with abarely detectable content of unreacted PbI2, full surface coverage andthickness ranging from less than 200 nm to more than 3 mum<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 200, 'nm', 0]

PI
###Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI3 Thin Films by RF-Magnetron Sputtering|Sara Bonomi,Daniela Marongiu,Nicola Sestu,Michele Saba,Maddalena Patrini,Giovanni Bongiovanni,Lorenzo Malavasi###
(211659, 211660)
 Light absorptionand emission properties of the deposited films are comparable to as-grownsolution-processed M<missing VAR>API films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 200, 'nm', 1]

In
###The Correlated Electronic States of a few Polycyclic Aromatic Hydrocarbons: A Computational Study|Geetanjali Giri,Anusooya Y. Pati,S. Ramasesha###
(211774, 211774)
 In recent years Polycyclic Aromatic Hydrocarbons (PAHs) have been studied fortheir electronic properties as they are viewed as nanodots of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 2, 'A', 4],[239.0, 1, 'B', 4]

P
###The Correlated Electronic States of a few Polycyclic Aromatic Hydrocarbons: A Computational Study|Geetanjali Giri,Anusooya Y. Pati,S. Ramasesha###
(211787, 211787)
 In recent years Polycyclic Aromatic Hydrocarbons (PAHs) have been studied fortheir electronic properties as they are viewed as nanodots of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 2, 'A', 4],[226.0, 1, 'B', 4]

Hs
###The Correlated Electronic States of a few Polycyclic Aromatic Hydrocarbons: A Computational Study|Geetanjali Giri,Anusooya Y. Pati,S. Ramasesha###
(211789, 211789)
 In recent years Polycyclic Aromatic Hydrocarbons (PAHs) have been studied fortheir electronic properties as they are viewed as nanodots of graphene.
EXCEPTION 3: IndexError for Hs
In
[214.0, 2, 'A', 4],[224.0, 1, 'B', 4]

In
###On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors|Oskar J. Sandberg,Ardalan Armin###
(212279, 212279)
 Inthis work, we show that lowering the bulk recombination does not necessarilyresult in enhanced performance metrics of electronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance|Chao He,Guocai Liu,Huiyan Zhao,Kun Zhao,Zuju Ma,Xingtao An###
(212706, 212709)
Inorganic photovoltaic cells based on BiFeO3 spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 1.0, 'the', 5],[321.0, 3.0, 'the', 6]

BiFeO3
###Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance|Chao He,Guocai Liu,Huiyan Zhao,Kun Zhao,Zuju Ma,Xingtao An###
(212796, 212799)
Here, by constructing a series of BiFeO3 based devices (solar cells), weinvestigated three factors that influence the photovoltaic performance,including spontaneous polarization, terminated ions species in the interfacebetween BiFeO3 and the electrode, and polarized light irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 1.0, 'the', 2],[231.0, 3.0, 'the', 3]

BiFeO3
###Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance|Chao He,Guocai Liu,Huiyan Zhao,Kun Zhao,Zuju Ma,Xingtao An###
(212855, 212858)
Here, by constructing a series of BiFeO3 based devices (solar cells), weinvestigated three factors that influence the photovoltaic performance,including spontaneous polarization, terminated ions species in the interfacebetween BiFeO3 and the electrode, and polarized light irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1.0, 'the', 2],[172.0, 3.0, 'the', 3]

Bi
###Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance|Chao He,Guocai Liu,Huiyan Zhao,Kun Zhao,Zuju Ma,Xingtao An###
(212992, 212992)
the photocurrent reaches the largest in Bi ions terminated interface than inthe case of Fe ion or O ion with SrTiO3 electrode; 3. the photocurrent could belargely enhanced if the polarized direction of the monochromatic light isperpendicular to the spontaneous polarization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1.0, 'the', 1],[38.0, 3.0, 'the', 0]

Fe
###Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance|Chao He,Guocai Liu,Huiyan Zhao,Kun Zhao,Zuju Ma,Xingtao An###
(213011, 213011)
the photocurrent reaches the largest in Bi ions terminated interface than inthe case of Fe ion or O ion with SrTiO3 electrode; 3. the photocurrent could belargely enhanced if the polarized direction of the monochromatic light isperpendicular to the spontaneous polarization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1.0, 'the', 1],[19.0, 3.0, 'the', 0]

O
###Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance|Chao He,Guocai Liu,Huiyan Zhao,Kun Zhao,Zuju Ma,Xingtao An###
(213017, 213017)
the photocurrent reaches the largest in Bi ions terminated interface than inthe case of Fe ion or O ion with SrTiO3 electrode; 3. the photocurrent could belargely enhanced if the polarized direction of the monochromatic light isperpendicular to the spontaneous polarization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 1.0, 'the', 1],[13.0, 3.0, 'the', 0]

SrTiO3
###Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance|Chao He,Guocai Liu,Huiyan Zhao,Kun Zhao,Zuju Ma,Xingtao An###
(213023, 213026)
the photocurrent reaches the largest in Bi ions terminated interface than inthe case of Fe ion or O ion with SrTiO3 electrode; 3. the photocurrent could belargely enhanced if the polarized direction of the monochromatic light isperpendicular to the spontaneous polarization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.0, 'the', 1],[4.0, 3.0, 'the', 0]

BiFeO3
###Inorganic photovoltaic cells based on BiFeO3: spontaneous polarization, lattice matching, light polarization and their relationship to photovoltaic performance|Chao He,Guocai Liu,Huiyan Zhao,Kun Zhao,Zuju Ma,Xingtao An###
(213098, 213101)
 The results woulddeepen the understanding of some experimental results of BiFeO3 based solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 1.0, 'the', 2],[68.0, 3.0, 'the', 1]

Cu2ZnSnS4
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213131, 213136)
Fabrication of solar cells based on Cu2ZnSnS4 prepared from Cu2SnS3 synthesized using a novel chemical procedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[435.0, 2, 'H', 5],[574.0, 4.2, '%', 7]

Cu2SnS3
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213142, 213146)
Fabrication of solar cells based on Cu2ZnSnS4 prepared from Cu2SnS3 synthesized using a novel chemical procedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[425.0, 2, 'H', 5],[564.0, 4.2, '%', 7]

Cu2ZnSnS4
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213173, 213178)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 2, 'H', 4],[532.0, 4.2, '%', 6]

C
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213181, 213181)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 2, 'H', 4],[529.0, 4.2, '%', 6]

S
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213184, 213184)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 2, 'H', 4],[526.0, 4.2, '%', 6]

C
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213210, 213210)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 2, 'H', 4],[500.0, 4.2, '%', 6]

S
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213213, 213213)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 2, 'H', 4],[497.0, 4.2, '%', 6]

Cu2SnS3
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213229, 213233)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 2, 'H', 4],[477.0, 4.2, '%', 6]

C
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213236, 213236)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 2, 'H', 4],[474.0, 4.2, '%', 6]

S
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213238, 213238)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 2, 'H', 4],[472.0, 4.2, '%', 6]

ZnS
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213243, 213244)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 2, 'H', 4],[466.0, 4.2, '%', 6]

C
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213262, 213262)
 Solar cells based on kesterite-type Cu2ZnSnS4 (CZTS) thin films werefabricated using a chemical route to prepare the CZTS films, consisting insequential deposition of Cu2SnS3 (CT<missing VAR>S) and ZnS thin films followed byannealing at 550circ C in nitrogen atmosphere.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 2, 'H', 4],[448.0, 4.2, '%', 6]

C
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213273, 213273)
 The CT<missing VAR>S compound wasprepared in a one-step process using a novel chemical procedure consisting ofsimultaneous precipitation of Cu2S and SnS2 performed by diffusionmembranes assisted CBD<missing VAR> (chemical bath deposition) technique.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 2, 'H', 3],[437.0, 4.2, '%', 5]

S
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213275, 213275)
 The CT<missing VAR>S compound wasprepared in a one-step process using a novel chemical procedure consisting ofsimultaneous precipitation of Cu2S and SnS2 performed by diffusionmembranes assisted CBD<missing VAR> (chemical bath deposition) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 2, 'H', 3],[435.0, 4.2, '%', 5]

Cu2S
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213315, 213317)
 The CT<missing VAR>S compound wasprepared in a one-step process using a novel chemical procedure consisting ofsimultaneous precipitation of Cu2S and SnS2 performed by diffusionmembranes assisted CBD<missing VAR> (chemical bath deposition) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 2, 'H', 3],[393.0, 4.2, '%', 5]

SnS2
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213321, 213323)
 The CT<missing VAR>S compound wasprepared in a one-step process using a novel chemical procedure consisting ofsimultaneous precipitation of Cu2S and SnS2 performed by diffusionmembranes assisted CBD<missing VAR> (chemical bath deposition) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, 'H', 3],[387.0, 4.2, '%', 5]

CB
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213336, 213337)
 The CT<missing VAR>S compound wasprepared in a one-step process using a novel chemical procedure consisting ofsimultaneous precipitation of Cu2S and SnS2 performed by diffusionmembranes assisted CBD<missing VAR> (chemical bath deposition) technique.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 2, 'H', 3],[373.0, 4.2, '%', 5]

As
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213398, 213398)
 As the conditions for theformation in one step of the Cu2SnS3 compound have not yet been reported inliterature, special emphasis was put on finding the parameters that allowgrowing the Cu2SnS3 thin films by simultaneous precipitation of Cu2S andSnS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 2, 'H', 1],[312.0, 4.2, '%', 3]

Cu2SnS3
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213421, 213425)
 As the conditions for theformation in one step of the Cu2SnS3 compound have not yet been reported inliterature, special emphasis was put on finding the parameters that allowgrowing the Cu2SnS3 thin films by simultaneous precipitation of Cu2S andSnS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2, 'H', 1],[285.0, 4.2, '%', 3]

Cu2SnS3
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213470, 213474)
 As the conditions for theformation in one step of the Cu2SnS3 compound have not yet been reported inliterature, special emphasis was put on finding the parameters that allowgrowing the Cu2SnS3 thin films by simultaneous precipitation of Cu2S andSnS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2, 'H', 1],[236.0, 4.2, '%', 3]

Cu2S
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213488, 213490)
 As the conditions for theformation in one step of the Cu2SnS3 compound have not yet been reported inliterature, special emphasis was put on finding the parameters that allowgrowing the Cu2SnS3 thin films by simultaneous precipitation of Cu2S andSnS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'H', 1],[220.0, 4.2, '%', 3]

SnS2
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213495, 213497)
 As the conditions for theformation in one step of the Cu2SnS3 compound have not yet been reported inliterature, special emphasis was put on finding the parameters that allowgrowing the Cu2SnS3 thin films by simultaneous precipitation of Cu2S andSnS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'H', 1],[213.0, 4.2, '%', 3]

SnCl2
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213557, 213559)
 For that, we propose a methodology that includes numerical solution ofthe equilibrium equations that were established through a study of the chemicalequilibrium of the system SnCl2, Na3C6H5O7cdot 2H2O, CuCl2 andNa2S2O3cdot5H2O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'H', 0],[151.0, 4.2, '%', 2]

Na3C6H5O7
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213562, 213569)
 For that, we propose a methodology that includes numerical solution ofthe equilibrium equations that were established through a study of the chemicalequilibrium of the system SnCl2, Na3C6H5O7cdot 2H2O, CuCl2 andNa2S2O3cdot5H2O.
Featurization terminated normally.
0.23809523809523808,0,0,0,0,0.2857142857142857,0,0.3333333333333333,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'H', 0],[141.0, 4.2, '%', 2]

O
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213573, 213573)
 For that, we propose a methodology that includes numerical solution ofthe equilibrium equations that were established through a study of the chemicalequilibrium of the system SnCl2, Na3C6H5O7cdot 2H2O, CuCl2 andNa2S2O3cdot5H2O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'H', 0],[137.0, 4.2, '%', 2]

CuCl2
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213576, 213578)
 For that, we propose a methodology that includes numerical solution ofthe equilibrium equations that were established through a study of the chemicalequilibrium of the system SnCl2, Na3C6H5O7cdot 2H2O, CuCl2 andNa2S2O3cdot5H2O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'H', 0],[132.0, 4.2, '%', 2]

Na2S2O3
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213583, 213588)
 For that, we propose a methodology that includes numerical solution ofthe equilibrium equations that were established through a study of the chemicalequilibrium of the system SnCl2, Na3C6H5O7cdot 2H2O, CuCl2 andNa2S2O3cdot5H2O.
Featurization terminated normally.
0,0,0,0,0,0,0,0.42857142857142855,0,0,0.2857142857142857,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'H', 0],[122.0, 4.2, '%', 2]

H2O
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213591, 213593)
 For that, we propose a methodology that includes numerical solution ofthe equilibrium equations that were established through a study of the chemicalequilibrium of the system SnCl2, Na3C6H5O7cdot 2H2O, CuCl2 andNa2S2O3cdot5H2O.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, 'H', 0],[117.0, 4.2, '%', 2]

C
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213608, 213608)
 The formation of thin films of CT<missing VAR>S and CZTS free ofsecondary phases grown with a stoichiometry close to that corresponding to theCu2SnS3 and Cu2ZnSnS4 phases, was verified through measurements ofX<missing VAR>-ray diffraction (XRD) and Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'H', 1],[102.0, 4.2, '%', 1]

S
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213610, 213610)
 The formation of thin films of CT<missing VAR>S and CZTS free ofsecondary phases grown with a stoichiometry close to that corresponding to theCu2SnS3 and Cu2ZnSnS4 phases, was verified through measurements ofX<missing VAR>-ray diffraction (XRD) and Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'H', 1],[100.0, 4.2, '%', 1]

C
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213614, 213614)
 The formation of thin films of CT<missing VAR>S and CZTS free ofsecondary phases grown with a stoichiometry close to that corresponding to theCu2SnS3 and Cu2ZnSnS4 phases, was verified through measurements ofX<missing VAR>-ray diffraction (XRD) and Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2, 'H', 1],[96.0, 4.2, '%', 1]

S
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213617, 213617)
 The formation of thin films of CT<missing VAR>S and CZTS free ofsecondary phases grown with a stoichiometry close to that corresponding to theCu2SnS3 and Cu2ZnSnS4 phases, was verified through measurements ofX<missing VAR>-ray diffraction (XRD) and Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'H', 1],[93.0, 4.2, '%', 1]

Cu2SnS3
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213649, 213653)
 The formation of thin films of CT<missing VAR>S and CZTS free ofsecondary phases grown with a stoichiometry close to that corresponding to theCu2SnS3 and Cu2ZnSnS4 phases, was verified through measurements ofX<missing VAR>-ray diffraction (XRD) and Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'H', 1],[57.0, 4.2, '%', 1]

Cu2ZnSnS4
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213657, 213662)
 The formation of thin films of CT<missing VAR>S and CZTS free ofsecondary phases grown with a stoichiometry close to that corresponding to theCu2SnS3 and Cu2ZnSnS4 phases, was verified through measurements ofX<missing VAR>-ray diffraction (XRD) and Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'H', 1],[48.0, 4.2, '%', 1]

V
###Fabrication of solar cells based on $Cu_2ZnSnS_4$ prepared from $Cu_2SnS_3$ synthesized using a novel chemical procedure|John M. Correa,Raúul A. Becerra,Asdrubal A. Ramírez,Gerardo Gordillo###
(213743, 213743)
 Solar cell with an efficiencyof 4.2%, short circuit current of 16.2 m<missing VAR>A/cm2 and open-circuit voltage of0.49 V was obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, 'H', 2],[33.0, 4.2, '%', 0]

In
###Influence of hydrogen radicals treatment on layers and solar cells made of solution-processed amorphous silicon|Torsten Bronger,Jan Wördenweber,Paul Wöbkenberg,Stefan Muthmann,Odo Wunnicke,Reinhard Carius###
(214137, 214137)
 In particular, the efficiency jumps by a factor of three.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Improved evaluation of deep-level transient spectroscopy on perovskite solar cells reveals ionic defect distribution|Sebastian Reichert,Jens Flemming,Qingzhi An,Yana Vaynzof,Jan-Frederik Pietschmann,Carsten Deibel###
(214331, 214331)
 In the literature one finds a broad spread of reported ionicdefect parameters (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Improved evaluation of deep-level transient spectroscopy on perovskite solar cells reveals ionic defect distribution|Sebastian Reichert,Jens Flemming,Qingzhi An,Yana Vaynzof,Jan-Frederik Pietschmann,Carsten Deibel###
(214403, 214403)
 In this work, we performed temperature dependent deep-leveltransient spectroscopy (DLTS) measurements on methylammonium lead iodideperovskite solar cells and developed a extended regularization algorithm forinverting the Laplace transform.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Improved evaluation of deep-level transient spectroscopy on perovskite solar cells reveals ionic defect distribution|Sebastian Reichert,Jens Flemming,Qingzhi An,Yana Vaynzof,Jan-Frederik Pietschmann,Carsten Deibel###
(214431, 214431)
 In this work, we performed temperature dependent deep-leveltransient spectroscopy (DLTS) measurements on methylammonium lead iodideperovskite solar cells and developed a extended regularization algorithm forinverting the Laplace transform.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Improved evaluation of deep-level transient spectroscopy on perovskite solar cells reveals ionic defect distribution|Sebastian Reichert,Jens Flemming,Qingzhi An,Yana Vaynzof,Jan-Frederik Pietschmann,Carsten Deibel###
(214565, 214565)
 Importantly, different DLTS modessuch as optical and current DLTS yield the same defect distributions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Improved evaluation of deep-level transient spectroscopy on perovskite solar cells reveals ionic defect distribution|Sebastian Reichert,Jens Flemming,Qingzhi An,Yana Vaynzof,Jan-Frederik Pietschmann,Carsten Deibel###
(214583, 214583)
 Importantly, different DLTS modessuch as optical and current DLTS yield the same defect distributions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Improved evaluation of deep-level transient spectroscopy on perovskite solar cells reveals ionic defect distribution|Sebastian Reichert,Jens Flemming,Qingzhi An,Yana Vaynzof,Jan-Frederik Pietschmann,Carsten Deibel###
(214618, 214618)
 Finallythe comparison of our results with conventional boxcar DLTS and impedancespectroscopy (IS) verifies our evaluation algorithm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(IS)
###Improved evaluation of deep-level transient spectroscopy on perovskite solar cells reveals ionic defect distribution|Sebastian Reichert,Jens Flemming,Qingzhi An,Yana Vaynzof,Jan-Frederik Pietschmann,Carsten Deibel###
(214627, 214630)
 Finallythe comparison of our results with conventional boxcar DLTS and impedancespectroscopy (IS) verifies our evaluation algorithm.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Electrical Characterization of CIGS Thin Film Solar Cells by Two and Four-Wires Probe Technique|Amirhosein Mosavi,Beszedes Bertalan,Felde Imre,Laszlo Nadai,Nima E. Gorji###
(214655, 214656)
Electrical Characterization of CIG<missing VAR>S Thin Film Solar Cells by Two and Four-Wires Probe Technique.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 4, 'wire', 2]

S
###Electrical Characterization of CIGS Thin Film Solar Cells by Two and Four-Wires Probe Technique|Amirhosein Mosavi,Beszedes Bertalan,Felde Imre,Laszlo Nadai,Nima E. Gorji###
(214658, 214658)
Electrical Characterization of CIG<missing VAR>S Thin Film Solar Cells by Two and Four-Wires Probe Technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 4, 'wire', 2]

In
###Electrical Characterization of CIGS Thin Film Solar Cells by Two and Four-Wires Probe Technique|Amirhosein Mosavi,Beszedes Bertalan,Felde Imre,Laszlo Nadai,Nima E. Gorji###
(214838, 214838)
 In this paper, both two and four-point probes configuration areemployed to characterize the CIG<missing VAR>S chalcogenide thin film solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4, 'wire', 1]

CI
###Electrical Characterization of CIGS Thin Film Solar Cells by Two and Four-Wires Probe Technique|Amirhosein Mosavi,Beszedes Bertalan,Felde Imre,Laszlo Nadai,Nima E. Gorji###
(214870, 214871)
 In this paper, both two and four-point probes configuration areemployed to characterize the CIG<missing VAR>S chalcogenide thin film solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, 'wire', 1]

S
###Electrical Characterization of CIGS Thin Film Solar Cells by Two and Four-Wires Probe Technique|Amirhosein Mosavi,Beszedes Bertalan,Felde Imre,Laszlo Nadai,Nima E. Gorji###
(214873, 214873)
 In this paper, both two and four-point probes configuration areemployed to characterize the CIG<missing VAR>S chalcogenide thin film solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 4, 'wire', 1]

In
###Electrical Characterization of CIGS Thin Film Solar Cells by Two and Four-Wires Probe Technique|Amirhosein Mosavi,Beszedes Bertalan,Felde Imre,Laszlo Nadai,Nima E. Gorji###
(215009, 215009)
 In contrast, theproposed four wire probe collects more current at higher voltages due toenhanced carrier collection efficiency from contact electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 4, 'wire', 5]

GaInAsP
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215130, 215133)
Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1, 'MeV', 2],[279.0, 1, 'MeV', 6],[289.0, 216, 'hours', 6]

GaInAsP
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215194, 215197)
 To investigate the specific irradiation damageof 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying Inand P contents, a simulation based analysis is employed by fitting the quantumefficiency and open-circuit voltage simultaneously before and afterirradiation, the induced changes in lifetime are detected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, 'MeV', 0],[215.0, 1, 'MeV', 4],[225.0, 216, 'hours', 4]

InP
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215205, 215206)
 To investigate the specific irradiation damageof 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying Inand P contents, a simulation based analysis is employed by fitting the quantumefficiency and open-circuit voltage simultaneously before and afterirradiation, the induced changes in lifetime are detected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 1, 'MeV', 0],[206.0, 1, 'MeV', 4],[216.0, 216, 'hours', 4]

In
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215212, 215212)
 To investigate the specific irradiation damageof 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying Inand P contents, a simulation based analysis is employed by fitting the quantumefficiency and open-circuit voltage simultaneously before and afterirradiation, the induced changes in lifetime are detected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1, 'MeV', 0],[200.0, 1, 'MeV', 4],[210.0, 216, 'hours', 4]

P
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215217, 215217)
 To investigate the specific irradiation damageof 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying Inand P contents, a simulation based analysis is employed by fitting the quantumefficiency and open-circuit voltage simultaneously before and afterirradiation, the induced changes in lifetime are detected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1, 'MeV', 0],[195.0, 1, 'MeV', 4],[205.0, 216, 'hours', 4]

O
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215313, 215313)
 Furthermore, thereduction of irradiation damage during regeneration under typical satelliteoperating conditions for GEO missions (60degC and AM<missing VAR>0 illumination) isinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1, 'MeV', 1],[99.0, 1, 'MeV', 3],[109.0, 216, 'hours', 3]

C
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215320, 215320)
 Furthermore, thereduction of irradiation damage during regeneration under typical satelliteoperating conditions for GEO missions (60degC and AM<missing VAR>0 illumination) isinvestigated.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1, 'MeV', 1],[92.0, 1, 'MeV', 3],[102.0, 216, 'hours', 3]

InP
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215380, 215381)
 This regeneration effect is stronger for increasingInP-fraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 1, 'MeV', 3],[31.0, 1, 'MeV', 1],[41.0, 216, 'hours', 1]

InP
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215441, 215442)
 It is demonstrated that the irradiation induced defectrecombination coefficient for irradiation with 1 MeV electrons afterregeneration for 216 hours can be described with a linear function ofInP-fraction between 110-5 cm2/s<missing VAR> for GaAs and 710-7 cm2/s<missing VAR> forInP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 1, 'MeV', 4],[29.0, 1, 'MeV', 0],[19.0, 216, 'hours', 0]

GaAs
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215460, 215461)
 It is demonstrated that the irradiation induced defectrecombination coefficient for irradiation with 1 MeV electrons afterregeneration for 216 hours can be described with a linear function ofInP-fraction between 110-5 cm2/s<missing VAR> for GaAs and 710-7 cm2/s<missing VAR> forInP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 1, 'MeV', 4],[48.0, 1, 'MeV', 0],[38.0, 216, 'hours', 0]

InP
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215478, 215479)
 It is demonstrated that the irradiation induced defectrecombination coefficient for irradiation with 1 MeV electrons afterregeneration for 216 hours can be described with a linear function ofInP-fraction between 110-5 cm2/s<missing VAR> for GaAs and 710-7 cm2/s<missing VAR> forInP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 1, 'MeV', 4],[66.0, 1, 'MeV', 0],[56.0, 216, 'hours', 0]

GaInAsP
###Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells|R. Lang,J. Schön,J. Lefèvre,B. Boizot,F. Dimroth,D. Lackner###
(215490, 215493)
 The results show that GaInAsP is a promising material for radiation hardspace solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 1, 'MeV', 5],[78.0, 1, 'MeV', 1],[68.0, 216, 'hours', 1]

(SF)
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215579, 215582)
 Inorganic-organic interfaces are important for enhancing the power conversionefficiency of silicon-based solar cells through singlet exciton fission (SF).
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 265, 'K', 2]

(Tc)
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215606, 215608)
We elucidated the structure of the first monolayers of tetracene (Tc), a SFmolecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphousSi (a-SiH) by combining near-edge X<missing VAR>-ray absorption fine structure (NEXAFS) andX<missing VAR>-ray photoelectron spectroscopy (X<missing VAR>PS) experiments with density functionaltheory (DFT) calculations.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 265, 'K', 1]

SF
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215613, 215614)
We elucidated the structure of the first monolayers of tetracene (Tc), a SFmolecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphousSi (a-SiH) by combining near-edge X<missing VAR>-ray absorption fine structure (NEXAFS) andX<missing VAR>-ray photoelectron spectroscopy (X<missing VAR>PS) experiments with density functionaltheory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 265, 'K', 1]

H
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215632, 215632)
We elucidated the structure of the first monolayers of tetracene (Tc), a SFmolecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphousSi (a-SiH) by combining near-edge X<missing VAR>-ray absorption fine structure (NEXAFS) andX<missing VAR>-ray photoelectron spectroscopy (X<missing VAR>PS) experiments with density functionaltheory (DFT) calculations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 265, 'K', 1]

Si
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215647, 215647)
We elucidated the structure of the first monolayers of tetracene (Tc), a SFmolecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphousSi (a-SiH) by combining near-edge X<missing VAR>-ray absorption fine structure (NEXAFS) andX<missing VAR>-ray photoelectron spectroscopy (X<missing VAR>PS) experiments with density functionaltheory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 265, 'K', 1]

H
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215653, 215653)
We elucidated the structure of the first monolayers of tetracene (Tc), a SFmolecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphousSi (a-SiH) by combining near-edge X<missing VAR>-ray absorption fine structure (NEXAFS) andX<missing VAR>-ray photoelectron spectroscopy (X<missing VAR>PS) experiments with density functionaltheory (DFT) calculations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 265, 'K', 1]

N
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215675, 215675)
We elucidated the structure of the first monolayers of tetracene (Tc), a SFmolecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphousSi (a-SiH) by combining near-edge X<missing VAR>-ray absorption fine structure (NEXAFS) andX<missing VAR>-ray photoelectron spectroscopy (X<missing VAR>PS) experiments with density functionaltheory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 265, 'K', 1]

S
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215680, 215680)
We elucidated the structure of the first monolayers of tetracene (Tc), a SFmolecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphousSi (a-SiH) by combining near-edge X<missing VAR>-ray absorption fine structure (NEXAFS) andX<missing VAR>-ray photoelectron spectroscopy (X<missing VAR>PS) experiments with density functionaltheory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 265, 'K', 1]

S
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215697, 215697)
We elucidated the structure of the first monolayers of tetracene (Tc), a SFmolecule, on hydrogen-passivated Si(111) [H-Si(111)] and hydrogenated amorphousSi (a-SiH) by combining near-edge X<missing VAR>-ray absorption fine structure (NEXAFS) andX<missing VAR>-ray photoelectron spectroscopy (X<missing VAR>PS) experiments with density functionaltheory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 265, 'K', 1]

Tc
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215747, 215747)
 For samples grown at or below substrate temperaturesof 265 K, the resulting ultrathin Tc films are dominated by almostupright-standing molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 265, 'K', 0]

Tc
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215783, 215783)
 The molecular arrangement is very similar to the Tcbulk phase, with only slightly higher average angle between the conjugatedmolecular plane normal and the surface normal (alpha) around 77deg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 265, 'K', 1]

K
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215841, 215841)
Judging from carbon K-edge X<missing VAR>-ray absorption spectra, the orientation of the Tcmolecules are almost identical when grown on H-Si(111) and a-SiH substrates aswell as for (sub)mono- to several-monolayer coverages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 265, 'K', 2]

Tc
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215862, 215862)
Judging from carbon K-edge X<missing VAR>-ray absorption spectra, the orientation of the Tcmolecules are almost identical when grown on H-Si(111) and a-SiH substrates aswell as for (sub)mono- to several-monolayer coverages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 265, 'K', 2]

H
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215879, 215879)
Judging from carbon K-edge X<missing VAR>-ray absorption spectra, the orientation of the Tcmolecules are almost identical when grown on H-Si(111) and a-SiH substrates aswell as for (sub)mono- to several-monolayer coverages.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 265, 'K', 2]

SiH
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(215890, 215891)
Judging from carbon K-edge X<missing VAR>-ray absorption spectra, the orientation of the Tcmolecules are almost identical when grown on H-Si(111) and a-SiH substrates aswell as for (sub)mono- to several-monolayer coverages.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 265, 'K', 2]

SF
###Tetracene ultrathin film growth on silicon|Jens Niederhausen,Hazem Aldahhak,Rowan W. MacQueen,Wolf Gero Schmidt,Uwe Gerstmann,Klaus Lips###
(216097, 216098)
 The larger overlap with the substratewavefunctions makes this arrangement attractive for an optimized interfacialelectron transfer in SF-assisted silicon solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 265, 'K', 6]

PC
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216182, 216183)
 Perovskite solar cells are one of the most attracting cells because ofremarkably improved power conversion efficiency (PCE) recently.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216216, 216217)
 Toward theirpractical application, it is important not only to increase the PCE<missing VAR> but also toelucidate the deterioration mechanism.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216355, 216355)
 By simultaneous measurements of solar-cell andESR characteristics of the same cell, the spin states in the hole-transportmaterial (HTM) spiro-OMeTAD are demonstrated to be changed at the molecularlevel, which varies the device performance under device operation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216362, 216362)
 By simultaneous measurements of solar-cell andESR characteristics of the same cell, the spin states in the hole-transportmaterial (HTM) spiro-OMeTAD are demonstrated to be changed at the molecularlevel, which varies the device performance under device operation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216451, 216451)
 Thesevariations are ascribed to the change of hole transport by charge-carrierscatterings and filling of deep trapping levels in the HTM, and to interfacialelectric dipole layers formed at the HTM interfaces.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216475, 216475)
 Thesevariations are ascribed to the change of hole transport by charge-carrierscatterings and filling of deep trapping levels in the HTM, and to interfacialelectric dipole layers formed at the HTM interfaces.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216482, 216482)
 In addition, reverseelectron transfer from TiO2 layer to the HTM layer is directly demonstrated atthe molecular level under ultraviolet light irradiation, which causes thedecrease in the HTM doping effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216496, 216498)
 In addition, reverseelectron transfer from TiO2 layer to the HTM layer is directly demonstrated atthe molecular level under ultraviolet light irradiation, which causes thedecrease in the HTM doping effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216506, 216506)
 In addition, reverseelectron transfer from TiO2 layer to the HTM layer is directly demonstrated atthe molecular level under ultraviolet light irradiation, which causes thedecrease in the HTM doping effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Operando direct observation of spin states correlated with device performance in perovskite solar cells|Takahiro Watanabe,Toshihiro Yamanari,Kazuhiro Marumoto###
(216549, 216549)
 In addition, reverseelectron transfer from TiO2 layer to the HTM layer is directly demonstrated atthe molecular level under ultraviolet light irradiation, which causes thedecrease in the HTM doping effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OIH
###Transmission electron microscopy of organic-inorganic hybrid perovskites: myths and truths|Shulin Chen,Ying Zhang,Jinjin Zhao,Zhou Mi,Jingmin Zhang,Jian Cao,Jicai Feng,Guanglei Zhang,Junlei Qi,Jiangyu Li,Peng Gao###
(216660, 216662)
 Organic-inorganic hybrid perovskites (OIHPs) have attracted extensiveresearch interest as a promising candidate for efficient and inexpensive solarcells.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OIH
###Transmission electron microscopy of organic-inorganic hybrid perovskites: myths and truths|Shulin Chen,Ying Zhang,Jinjin Zhao,Zhou Mi,Jingmin Zhang,Jian Cao,Jicai Feng,Guanglei Zhang,Junlei Qi,Jiangyu Li,Peng Gao###
(216846, 216848)
 Here, wesystematacially investigate the structural degradation behaviors underdifferent experimental factors to reveal the optimized conditions for TEMcharacterizations of OIHPs by using low-dose electron diffraction and imagingtechniques.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OIH
###Transmission electron microscopy of organic-inorganic hybrid perovskites: myths and truths|Shulin Chen,Ying Zhang,Jinjin Zhao,Zhou Mi,Jingmin Zhang,Jian Cao,Jicai Feng,Guanglei Zhang,Junlei Qi,Jiangyu Li,Peng Gao###
(216912, 216914)
 We find that a low temperature does not slow down the beam damagebut instead induces a rapid amorphization for OIHPs.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Transmission electron microscopy of organic-inorganic hybrid perovskites: myths and truths|Shulin Chen,Ying Zhang,Jinjin Zhao,Zhou Mi,Jingmin Zhang,Jian Cao,Jicai Feng,Guanglei Zhang,Junlei Qi,Jiangyu Li,Peng Gao###
(216976, 216978)
 The beam-sensitivity isfound to be facet-dependent that a (100) exposed M<missing VAR>APbI3 surface is more stablethan (001) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Transmission electron microscopy of organic-inorganic hybrid perovskites: myths and truths|Shulin Chen,Ying Zhang,Jinjin Zhao,Zhou Mi,Jingmin Zhang,Jian Cao,Jicai Feng,Guanglei Zhang,Junlei Qi,Jiangyu Li,Peng Gao###
(217024, 217026)
 With these guidance, we successfully acquire the atomicstructure of pristine M<missing VAR>APbI3 and identify the characterization window that isvery narrow.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbS
###Ligand Dependent Oxidation Dictates the Performance Evolution of High Efficiency PbS Quantum Dot Solar Cells|David Becker-Koch,Miguel Albaladejo Siguan,Vincent Lami,Fabian Paulus,Hengyang Xiang,Zhuoying Chen,Yana Vaynzof###
(217149, 217150)
Ligand Dependent Oxidation Dictates the Performance Evolution of High Efficiency PbS Quantum Dot Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 12, '%', 1],[185.0, 1, ',', 4]

(PbS)
###Ligand Dependent Oxidation Dictates the Performance Evolution of High Efficiency PbS Quantum Dot Solar Cells|David Becker-Koch,Miguel Albaladejo Siguan,Vincent Lami,Fabian Paulus,Hengyang Xiang,Zhuoying Chen,Yana Vaynzof###
(217165, 217168)
 Lead sulfide (PbS) quantum dot (QD) photovoltaics have reached impressiveefficiencies of 12%, making them particularly promising for futureapplications.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 12, '%', 0],[167.0, 1, ',', 3]

In
###Ligand Dependent Oxidation Dictates the Performance Evolution of High Efficiency PbS Quantum Dot Solar Cells|David Becker-Koch,Miguel Albaladejo Siguan,Vincent Lami,Fabian Paulus,Hengyang Xiang,Zhuoying Chen,Yana Vaynzof###
(217251, 217251)
 In thiswork, we demonstrate that the degradation processes in PbS Q<missing VAR>Ds which areexposed to oxygenated environments are tightly related to the choice ofligands, rather than their intrinsic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 12, '%', 2],[84.0, 1, ',', 1]

PbS
###Ligand Dependent Oxidation Dictates the Performance Evolution of High Efficiency PbS Quantum Dot Solar Cells|David Becker-Koch,Miguel Albaladejo Siguan,Vincent Lami,Fabian Paulus,Hengyang Xiang,Zhuoying Chen,Yana Vaynzof###
(217273, 217274)
 In thiswork, we demonstrate that the degradation processes in PbS Q<missing VAR>Ds which areexposed to oxygenated environments are tightly related to the choice ofligands, rather than their intrinsic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 12, '%', 2],[61.0, 1, ',', 1]

Ds
###Ligand Dependent Oxidation Dictates the Performance Evolution of High Efficiency PbS Quantum Dot Solar Cells|David Becker-Koch,Miguel Albaladejo Siguan,Vincent Lami,Fabian Paulus,Hengyang Xiang,Zhuoying Chen,Yana Vaynzof###
(217277, 217277)
 In thiswork, we demonstrate that the degradation processes in PbS Q<missing VAR>Ds which areexposed to oxygenated environments are tightly related to the choice ofligands, rather than their intrinsic properties.
EXCEPTION 3: IndexError for Ds
In
[85.0, 12, '%', 2],[58.0, 1, ',', 1]

C
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(217752, 217752)
 Expanded porphyrin-based (Hexaphyrins) sensitizers are promising due to theirexcellent light harvesting feature in dye-sensitized solar cell (D<missing VAR>SSC).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 33, '%', 4]

(SF)
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(217897, 217900)
 All E<missing VAR>Ps studied heresatisfy the energy condition of singlet fission (SF).
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 33, '%', 1]

SF
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(217903, 217904)
 SF is the process inwhich the theoretical limit of Shockley-Quiesser (SQ) (33%) can be overcome insingle junction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 33, '%', 0]

S
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(217930, 217930)
 SF is the process inwhich the theoretical limit of Shockley-Quiesser (SQ) (33%) can be overcome insingle junction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 33, '%', 0]

N
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(218017, 218017)
 From the second orderNL<missing VAR>O properties we carried out degenerate four wave mixing (D<missing VAR>FWM) component(gamma(2)(-omega;omega,omega,-omega)) and finally quadratic nonlinear refractive indices of these E<missing VAR>Ps are calculated.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 33, '%', 2]

O
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(218019, 218019)
 From the second orderNL<missing VAR>O properties we carried out degenerate four wave mixing (D<missing VAR>FWM) component(gamma(2)(-omega;omega,omega,-omega)) and finally quadratic nonlinear refractive indices of these E<missing VAR>Ps are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 33, '%', 2]

FW
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(218039, 218040)
 From the second orderNL<missing VAR>O properties we carried out degenerate four wave mixing (D<missing VAR>FWM) component(gamma(2)(-omega;omega,omega,-omega)) and finally quadratic nonlinear refractive indices of these E<missing VAR>Ps are calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 33, '%', 2]

SSC
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(218132, 218134)
 Calculation showed E<missing VAR>Psare promising as organic dye for the opto-electronic applications and usefulfor high efficiency D<missing VAR>SSC and also useful for potential NL<missing VAR>O materials as theirhyper polarizabilities showed higher order non linearities.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 33, '%', 3]

N
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(218146, 218146)
 Calculation showed E<missing VAR>Psare promising as organic dye for the opto-electronic applications and usefulfor high efficiency D<missing VAR>SSC and also useful for potential NL<missing VAR>O materials as theirhyper polarizabilities showed higher order non linearities.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 33, '%', 3]

O
###Computational investigation on non-linear optical properties of hexaphyrin and core modified hexaphyrins|Sumit Naskar,Mousumi Das###
(218148, 218148)
 Calculation showed E<missing VAR>Psare promising as organic dye for the opto-electronic applications and usefulfor high efficiency D<missing VAR>SSC and also useful for potential NL<missing VAR>O materials as theirhyper polarizabilities showed higher order non linearities.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 33, '%', 3]

(SiOH)
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218264, 218268)
 Differenthydrogenated silicon oxide (SiOH) and silicon (SiH) films are fabricatedbetween microcrystalline and amorphous transition region.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 2.0, 'eV', 5]

(SiH)
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218274, 218277)
 Differenthydrogenated silicon oxide (SiOH) and silicon (SiH) films are fabricatedbetween microcrystalline and amorphous transition region.
Featurization successful!
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 2.0, 'eV', 5]

F
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218310, 218310)
 X<missing VAR>-ray diffraction,Raman, FTIR and UV-Vis emission spectrometry have been used to characterizedifferent films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2.0, 'eV', 4]

UV
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218317, 218318)
 X<missing VAR>-ray diffraction,Raman, FTIR and UV-Vis emission spectrometry have been used to characterizedifferent films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[268.0, 2.0, 'eV', 4]

H
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218382, 218382)
 A comparison of the results with those of different types offilms like hydrogenated amorphous silicon oxide (a-SiOH), hydrogenatedamorphous silicon (a-SiH) and microcrystalline silicon (muc<missing VAR>-SiH) filmsreveal their superiority as an excellent substance for solar cell.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 2.0, 'eV', 3]

H
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218397, 218397)
 A comparison of the results with those of different types offilms like hydrogenated amorphous silicon oxide (a-SiOH), hydrogenatedamorphous silicon (a-SiH) and microcrystalline silicon (muc<missing VAR>-SiH) filmsreveal their superiority as an excellent substance for solar cell.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 2.0, 'eV', 3]

H
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218411, 218411)
 A comparison of the results with those of different types offilms like hydrogenated amorphous silicon oxide (a-SiOH), hydrogenatedamorphous silicon (a-SiH) and microcrystalline silicon (muc<missing VAR>-SiH) filmsreveal their superiority as an excellent substance for solar cell.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2.0, 'eV', 3]

F
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218446, 218446)
 X<missing VAR>-raydiffraction, FTIR and Raman spectral analysis show that difference of the Hdilution effect has a major effect on the structure of the film and the opticalproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 2.0, 'eV', 2]

H
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218469, 218469)
 X<missing VAR>-raydiffraction, FTIR and Raman spectral analysis show that difference of the Hdilution effect has a major effect on the structure of the film and the opticalproperties.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 2.0, 'eV', 2]

Si
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218544, 218544)
 Photoluminescence analysis of amorphous silicon-oxygen andsilicon-hydride alloy films has established their efficient applicationappropriate as Si based light emitting devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2.0, 'eV', 1]

V
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218571, 218571)
 A large optical band gap of1.83 e<missing VAR>V and appearance of strong photo luminescence at 2.0 eV validates theapplicability of a-SiOH film as a better alternative for the solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2.0, 'eV', 0]

SiOH
###Studies on optical signal due to oxygen effect on hydrogenated amorphous/crystalline silicon thin-films|Meenakshi Rana,Chandan Banerjee,Papia Chowdhury###
(218599, 218601)
 A large optical band gap of1.83 e<missing VAR>V and appearance of strong photo luminescence at 2.0 eV validates theapplicability of a-SiOH film as a better alternative for the solar cells.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2.0, 'eV', 0]

As
###Open-Circuit Voltage Limitation by Surface Recombination in Perovskite Solar Cells|Sebastian Reichert,Katelyn Goetz,Christopher Wöpke,Yana Vaynzof,Carsten Deibel###
(218763, 218763)
 As aresult, the electronic landscape, including its interaction with mobile ions,is difficult to access both experimentally and analytically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 0.74, 'to', 4],[275.0, 1.64, 'for', 4]

(IS)
###Open-Circuit Voltage Limitation by Surface Recombination in Perovskite Solar Cells|Sebastian Reichert,Katelyn Goetz,Christopher Wöpke,Yana Vaynzof,Carsten Deibel###
(218842, 218845)
 To address thischallenge, we applied a series of small perturbation techniques includingimpedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy(IM<missing VAR>PS) and intensity-modulated photovoltage spectroscopy (IM<missing VAR>VS) to planarmathrmM<missing VAR>APbI3 perovskite solar cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0.74, 'to', 3],[193.0, 1.64, 'for', 3]

I
###Open-Circuit Voltage Limitation by Surface Recombination in Perovskite Solar Cells|Sebastian Reichert,Katelyn Goetz,Christopher Wöpke,Yana Vaynzof,Carsten Deibel###
(218858, 218858)
 To address thischallenge, we applied a series of small perturbation techniques includingimpedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy(IM<missing VAR>PS) and intensity-modulated photovoltage spectroscopy (IM<missing VAR>VS) to planarmathrmM<missing VAR>APbI3 perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 0.74, 'to', 3],[180.0, 1.64, 'for', 3]

S
###Open-Circuit Voltage Limitation by Surface Recombination in Perovskite Solar Cells|Sebastian Reichert,Katelyn Goetz,Christopher Wöpke,Yana Vaynzof,Carsten Deibel###
(218861, 218861)
 To address thischallenge, we applied a series of small perturbation techniques includingimpedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy(IM<missing VAR>PS) and intensity-modulated photovoltage spectroscopy (IM<missing VAR>VS) to planarmathrmM<missing VAR>APbI3 perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.74, 'to', 3],[177.0, 1.64, 'for', 3]

I
###Open-Circuit Voltage Limitation by Surface Recombination in Perovskite Solar Cells|Sebastian Reichert,Katelyn Goetz,Christopher Wöpke,Yana Vaynzof,Carsten Deibel###
(218875, 218875)
 To address thischallenge, we applied a series of small perturbation techniques includingimpedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy(IM<missing VAR>PS) and intensity-modulated photovoltage spectroscopy (IM<missing VAR>VS) to planarmathrmM<missing VAR>APbI3 perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 0.74, 'to', 3],[163.0, 1.64, 'for', 3]

S
###Open-Circuit Voltage Limitation by Surface Recombination in Perovskite Solar Cells|Sebastian Reichert,Katelyn Goetz,Christopher Wöpke,Yana Vaynzof,Carsten Deibel###
(218878, 218878)
 To address thischallenge, we applied a series of small perturbation techniques includingimpedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy(IM<missing VAR>PS) and intensity-modulated photovoltage spectroscopy (IM<missing VAR>VS) to planarmathrmM<missing VAR>APbI3 perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 0.74, 'to', 3],[160.0, 1.64, 'for', 3]

PbI3
###Open-Circuit Voltage Limitation by Surface Recombination in Perovskite Solar Cells|Sebastian Reichert,Katelyn Goetz,Christopher Wöpke,Yana Vaynzof,Carsten Deibel###
(218889, 218891)
 To address thischallenge, we applied a series of small perturbation techniques includingimpedance spectroscopy (IS), intensity-modulated photocurrent spectroscopy(IM<missing VAR>PS) and intensity-modulated photovoltage spectroscopy (IM<missing VAR>VS) to planarmathrmM<missing VAR>APbI3 perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0.74, 'to', 3],[147.0, 1.64, 'for', 3]

Cs
###Multiple Exciton Generation Solar Cells: Numerical Approach of Quantum Yield Extraction and its Limiting Efficiencies|Jongwon Lee###
(219187, 219187)
 This paper elucidates thenon-idealities of multiple exciton generation solar cells (MEGSCs) andalternative approaches for realizing photovoltaic (PV) devices similar toMEGSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PV)
###Multiple Exciton Generation Solar Cells: Numerical Approach of Quantum Yield Extraction and its Limiting Efficiencies|Jongwon Lee###
(219203, 219206)
 This paper elucidates thenon-idealities of multiple exciton generation solar cells (MEGSCs) andalternative approaches for realizing photovoltaic (PV) devices similar toMEGSCs.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Multiple Exciton Generation Solar Cells: Numerical Approach of Quantum Yield Extraction and its Limiting Efficiencies|Jongwon Lee###
(219218, 219219)
 This paper elucidates thenon-idealities of multiple exciton generation solar cells (MEGSCs) andalternative approaches for realizing photovoltaic (PV) devices similar toMEGSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Multiple Exciton Generation Solar Cells: Numerical Approach of Quantum Yield Extraction and its Limiting Efficiencies|Jongwon Lee###
(219246, 219246)
 First, we present mathematical approaches for determining the quantumyield (Q<missing VAR>Y) to discuss the non-idealities of MEGSCs by adjusting the deltafunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Multiple Exciton Generation Solar Cells: Numerical Approach of Quantum Yield Extraction and its Limiting Efficiencies|Jongwon Lee###
(219264, 219265)
 First, we present mathematical approaches for determining the quantumyield (Q<missing VAR>Y) to discuss the non-idealities of MEGSCs by adjusting the deltafunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Multiple Exciton Generation Solar Cells: Numerical Approach of Quantum Yield Extraction and its Limiting Efficiencies|Jongwon Lee###
(219279, 219279)
 In particular, we employ the Gaussian distribution function topresent the occupancy status of carriers at each energy state by Dirac deltafunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Multiple Exciton Generation Solar Cells: Numerical Approach of Quantum Yield Extraction and its Limiting Efficiencies|Jongwon Lee###
(219392, 219393)
 Through this approach, we discussthe material imperfections of MEGSCs by analyzing the mathematically obtainedQ<missing VAR>Ys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Multiple Exciton Generation Solar Cells: Numerical Approach of Quantum Yield Extraction and its Limiting Efficiencies|Jongwon Lee###
(219477, 219478)
 By calculating the ratio between the radiative and nonradiativerecombination, we can discuss the status of radiative recombination calculateFurthermore, we apply this approach into the detailed balance limit of MEGSC toinvestigate the practical limit of MEGSC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Multiple Exciton Generation Solar Cells: Numerical Approach of Quantum Yield Extraction and its Limiting Efficiencies|Jongwon Lee###
(219496, 219497)
 By calculating the ratio between the radiative and nonradiativerecombination, we can discuss the status of radiative recombination calculateFurthermore, we apply this approach into the detailed balance limit of MEGSC toinvestigate the practical limit of MEGSC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuInS2
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219524, 219527)
Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 80, 'oC', 5]

F
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219605, 219605)
 The internalvoltage or the quasi-Fermi level splitting (q<missing VAR>FLs) measures the quality of theabsorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 80, 'oC', 3]

(VOC)
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219637, 219641)
 Interface recombination reduces the open circuit voltage (VOC) withrespect to the q<missing VAR>FLs.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 80, 'oC', 2]

F
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219653, 219653)
 Interface recombination reduces the open circuit voltage (VOC) withrespect to the q<missing VAR>FLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 80, 'oC', 2]

S
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219681, 219681)
 The present work explores a facile sulfur-basedpost-deposition treatment (S-PDT) to passivate the interface of CuInS2 thinfilms grown under Cu-rich conditions, which show excellent q<missing VAR>FLs values, butmuch lower VOCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 80, 'oC', 1]

P
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219683, 219683)
 The present work explores a facile sulfur-basedpost-deposition treatment (S-PDT) to passivate the interface of CuInS2 thinfilms grown under Cu-rich conditions, which show excellent q<missing VAR>FLs values, butmuch lower VOCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 80, 'oC', 1]

CuInS2
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219698, 219701)
 The present work explores a facile sulfur-basedpost-deposition treatment (S-PDT) to passivate the interface of CuInS2 thinfilms grown under Cu-rich conditions, which show excellent q<missing VAR>FLs values, butmuch lower VOCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 80, 'oC', 1]

Cu
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219712, 219712)
 The present work explores a facile sulfur-basedpost-deposition treatment (S-PDT) to passivate the interface of CuInS2 thinfilms grown under Cu-rich conditions, which show excellent q<missing VAR>FLs values, butmuch lower VOCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 80, 'oC', 1]

F
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219726, 219726)
 The present work explores a facile sulfur-basedpost-deposition treatment (S-PDT) to passivate the interface of CuInS2 thinfilms grown under Cu-rich conditions, which show excellent q<missing VAR>FLs values, butmuch lower VOCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 80, 'oC', 1]

VOCs
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219739, 219741)
 The present work explores a facile sulfur-basedpost-deposition treatment (S-PDT) to passivate the interface of CuInS2 thinfilms grown under Cu-rich conditions, which show excellent q<missing VAR>FLs values, butmuch lower VOCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 80, 'oC', 1]

CuInS2
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219746, 219749)
 The CuInS2 absorbers are treated in three differentS-containing solutions at 80 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 80, 'oC', 0]

S
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219764, 219764)
 The CuInS2 absorbers are treated in three differentS-containing solutions at 80 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 80, 'oC', 0]

F
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219805, 219805)
 Absolute calibrated photoluminescence andcurrent-voltage measurements demonstrate a reduction of the deficit betweenq<missing VAR>FLs and VOC in the best S-PDT device by almost one third compared to theuntreated device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 80, 'oC', 1]

VOC
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219810, 219812)
 Absolute calibrated photoluminescence andcurrent-voltage measurements demonstrate a reduction of the deficit betweenq<missing VAR>FLs and VOC in the best S-PDT device by almost one third compared to theuntreated device.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 80, 'oC', 1]

S
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219820, 219820)
 Absolute calibrated photoluminescence andcurrent-voltage measurements demonstrate a reduction of the deficit betweenq<missing VAR>FLs and VOC in the best S-PDT device by almost one third compared to theuntreated device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 80, 'oC', 1]

P
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219822, 219822)
 Absolute calibrated photoluminescence andcurrent-voltage measurements demonstrate a reduction of the deficit betweenq<missing VAR>FLs and VOC in the best S-PDT device by almost one third compared to theuntreated device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 80, 'oC', 1]

In
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219896, 219896)
 In addition, capacitance transientmeasurements reveal the presence of slow metastable defects in the untreatedsolar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 80, 'oC', 3]

S
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219950, 219950)
 The slow response is considerably reduced by the S-PDT, suggestingpassivation of these slow metastable defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 80, 'oC', 4]

P
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219952, 219952)
 The slow response is considerably reduced by the S-PDT, suggestingpassivation of these slow metastable defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 80, 'oC', 4]

S
###Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment|Mohit Sood,Alberto Lomuscio,Florian Werner,Aleksandra Nikolaeva,Phillip J. Dale,Michele Melchiorre,Jerome Guillot,Daniel Abou-Ras,Susanne Siebentritt###
(219990, 219990)
 The results demonstrate theeffectiveness of solution based S-treatment in passivating defects, presentinga promising strategy to explore and reduce defect states near the interface ofchalcogenide semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 80, 'oC', 5]

In
###Thin Film Growth of Phase-Separating Phthalocyanine-Fullerene Blends: A Combined Experimental and Computational Study|Berthold Reisz,Eelco Empting,Matthias Zwadlo,Martin Hodas,Giuliano Duva,Valentina Belova,Clemens Zeiser,Jan Hagenlocher,Santanu Maiti,Alexander Hinderhofer,Alexander Gerlach,Martin Oettel,Frank Schreiber###
(220202, 220202)
 In this study, pure and blended thin films of copperphthalocyanine (CuPc) and the Buckminster fullerene (C60) were grown by vacuumdeposition onto a native silicon oxide substrate at two different substratetemperatures, 310 K and 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 310, 'K', 0],[79.0, 400, 'K', 0],[326.0, 310, 'K', 5],[329.0, 400, 'K', 5]

Cu
###Thin Film Growth of Phase-Separating Phthalocyanine-Fullerene Blends: A Combined Experimental and Computational Study|Berthold Reisz,Eelco Empting,Matthias Zwadlo,Martin Hodas,Giuliano Duva,Valentina Belova,Clemens Zeiser,Jan Hagenlocher,Santanu Maiti,Alexander Hinderhofer,Alexander Gerlach,Martin Oettel,Frank Schreiber###
(220227, 220227)
 In this study, pure and blended thin films of copperphthalocyanine (CuPc) and the Buckminster fullerene (C60) were grown by vacuumdeposition onto a native silicon oxide substrate at two different substratetemperatures, 310 K and 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 310, 'K', 0],[54.0, 400, 'K', 0],[301.0, 310, 'K', 5],[304.0, 400, 'K', 5]

(C60)
###Thin Film Growth of Phase-Separating Phthalocyanine-Fullerene Blends: A Combined Experimental and Computational Study|Berthold Reisz,Eelco Empting,Matthias Zwadlo,Martin Hodas,Giuliano Duva,Valentina Belova,Clemens Zeiser,Jan Hagenlocher,Santanu Maiti,Alexander Hinderhofer,Alexander Gerlach,Martin Oettel,Frank Schreiber###
(220239, 220242)
 In this study, pure and blended thin films of copperphthalocyanine (CuPc) and the Buckminster fullerene (C60) were grown by vacuumdeposition onto a native silicon oxide substrate at two different substratetemperatures, 310 K and 400 K.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 310, 'K', 0],[39.0, 400, 'K', 0],[286.0, 310, 'K', 5],[289.0, 400, 'K', 5]

Cu
###Thin Film Growth of Phase-Separating Phthalocyanine-Fullerene Blends: A Combined Experimental and Computational Study|Berthold Reisz,Eelco Empting,Matthias Zwadlo,Martin Hodas,Giuliano Duva,Valentina Belova,Clemens Zeiser,Jan Hagenlocher,Santanu Maiti,Alexander Hinderhofer,Alexander Gerlach,Martin Oettel,Frank Schreiber###
(220387, 220387)
 The formation of a smooth wetting layer followed byrapid roughening was found in pure CuPc thin films, whereas C60 shows a fastformation of distinct islands at a very early stage of growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 310, 'K', 3],[106.0, 400, 'K', 3],[141.0, 310, 'K', 2],[144.0, 400, 'K', 2]

C60
###Thin Film Growth of Phase-Separating Phthalocyanine-Fullerene Blends: A Combined Experimental and Computational Study|Berthold Reisz,Eelco Empting,Matthias Zwadlo,Martin Hodas,Giuliano Duva,Valentina Belova,Clemens Zeiser,Jan Hagenlocher,Santanu Maiti,Alexander Hinderhofer,Alexander Gerlach,Martin Oettel,Frank Schreiber###
(220397, 220398)
 The formation of a smooth wetting layer followed byrapid roughening was found in pure CuPc thin films, whereas C60 shows a fastformation of distinct islands at a very early stage of growth.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 310, 'K', 3],[116.0, 400, 'K', 3],[130.0, 310, 'K', 2],[133.0, 400, 'K', 2]

Cu
###Thin Film Growth of Phase-Separating Phthalocyanine-Fullerene Blends: A Combined Experimental and Computational Study|Berthold Reisz,Eelco Empting,Matthias Zwadlo,Martin Hodas,Giuliano Duva,Valentina Belova,Clemens Zeiser,Jan Hagenlocher,Santanu Maiti,Alexander Hinderhofer,Alexander Gerlach,Martin Oettel,Frank Schreiber###
(220441, 220441)
 The growth ofneedle-like CuPc crystals loosing their alignment with the substrate wasidentified in co-deposited thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 310, 'K', 4],[160.0, 400, 'K', 4],[87.0, 310, 'K', 1],[90.0, 400, 'K', 1]

In
###Interplay of photons and charge carriers in thin-film devices|Pyry Kivisaari,Mikko Partanen,Toufik Sadi,Jani Oksanen###
(220761, 220761)
 In particular, such a framework would need toaccount quantitatively and self-consistently for photon recycling andinterference effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Interplay of photons and charge carriers in thin-film devices|Pyry Kivisaari,Mikko Partanen,Toufik Sadi,Jani Oksanen###
(220924, 220925)
 The resulting equationsystem can be solved numerically using standard simulation tools, and as anexample, here we apply it to study well-known GaAs thin-film solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interplay of photons and charge carriers in thin-film devices|Pyry Kivisaari,Mikko Partanen,Toufik Sadi,Jani Oksanen###
(220936, 220936)
 Inaddition to obtaining the expected device characteristics, we analyze theunderlying complex photon transport and recombination-generation processes,demonstrating the physical insight provided for unevenly excited structuresthrough the direct and self-consistent description of photons and chargecarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###The Evolution of Materials Acceleration Platforms -- Towards the Laboratory of the Future with AMANDA|Jerrit Wagner,Christian G. Berger,Xiaoyan Du,Tobias Stubhan,Jens A. Hauch,Christoph J. Brabec###
(221149, 221149)
The Evolution of Materials Acceleration Platforms -- Towards the Laboratory of the Future with AM<missing VAR>AND<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 272, 'device', 8],[469.0, 13.7, '%', 10]

As
###The Evolution of Materials Acceleration Platforms -- Towards the Laboratory of the Future with AMANDA|Jerrit Wagner,Christian G. Berger,Xiaoyan Du,Tobias Stubhan,Jens A. Hauch,Christoph J. Brabec###
(221279, 221279)
 As the number ofpublications on Materials Acceleration Platforms (M<missing VAR>APs) increases steadily, wereview selected systems and fit them into the stages of a general materialdevelopment process to examine the evolution of M<missing VAR>APs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 272, 'device', 4],[339.0, 13.7, '%', 6]

N
###The Evolution of Materials Acceleration Platforms -- Towards the Laboratory of the Future with AMANDA|Jerrit Wagner,Christian G. Berger,Xiaoyan Du,Tobias Stubhan,Jens A. Hauch,Christoph J. Brabec###
(221389, 221389)
 We introduce AM<missing VAR>AND<missing VAR>A(Autonomous Materials and Device Application Platform), a generic platform fordistributed materials research comprising a self-developed software backboneand several M<missing VAR>APs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 272, 'device', 2],[229.0, 13.7, '%', 4]

(OSC)
###The Evolution of Materials Acceleration Platforms -- Towards the Laboratory of the Future with AMANDA|Jerrit Wagner,Christian G. Berger,Xiaoyan Du,Tobias Stubhan,Jens A. Hauch,Christoph J. Brabec###
(221496, 221500)
 One of them, LineOne (L<missing VAR>1), is specifically designed toproduce and characterize solution processed thin-film devices like organicsolar cells (OSC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 272, 'device', 1],[118.0, 13.7, '%', 3]

N
###The Evolution of Materials Acceleration Platforms -- Towards the Laboratory of the Future with AMANDA|Jerrit Wagner,Christian G. Berger,Xiaoyan Du,Tobias Stubhan,Jens A. Hauch,Christoph J. Brabec###
(221592, 221592)
 We want to demonstrate the capabilities of AM<missing VAR>AND<missing VAR>AL<missing VAR>1 with OSCs based on PM<missing VAR>6Y6 with 13.7% efficiency when processed in air.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 272, 'device', 2],[26.0, 13.7, '%', 0]

OSCs
###The Evolution of Materials Acceleration Platforms -- Towards the Laboratory of the Future with AMANDA|Jerrit Wagner,Christian G. Berger,Xiaoyan Du,Tobias Stubhan,Jens A. Hauch,Christoph J. Brabec###
(221602, 221604)
 We want to demonstrate the capabilities of AM<missing VAR>AND<missing VAR>AL<missing VAR>1 with OSCs based on PM<missing VAR>6Y6 with 13.7% efficiency when processed in air.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 272, 'device', 2],[14.0, 13.7, '%', 0]

P
###The Evolution of Materials Acceleration Platforms -- Towards the Laboratory of the Future with AMANDA|Jerrit Wagner,Christian G. Berger,Xiaoyan Du,Tobias Stubhan,Jens A. Hauch,Christoph J. Brabec###
(221610, 221610)
 We want to demonstrate the capabilities of AM<missing VAR>AND<missing VAR>AL<missing VAR>1 with OSCs based on PM<missing VAR>6Y6 with 13.7% efficiency when processed in air.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 272, 'device', 2],[8.0, 13.7, '%', 0]

Y6
###The Evolution of Materials Acceleration Platforms -- Towards the Laboratory of the Future with AMANDA|Jerrit Wagner,Christian G. Berger,Xiaoyan Du,Tobias Stubhan,Jens A. Hauch,Christoph J. Brabec###
(221613, 221614)
 We want to demonstrate the capabilities of AM<missing VAR>AND<missing VAR>AL<missing VAR>1 with OSCs based on PM<missing VAR>6Y6 with 13.7% efficiency when processed in air.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 272, 'device', 2],[4.0, 13.7, '%', 0]

I
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221749, 221749)
Stability enhancement of IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell using two-step post-treated PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 0.9, 'to', 3],[199.0, 1448, 'S', 3],[253.0, 30, 'days', 4],[277.0, 70, '%', 4],[413.0, 3, 'min', 6],[522.0, 5.8, '%', 8]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221751, 221751)
Stability enhancement of IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell using two-step post-treated PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 0.9, 'to', 3],[197.0, 1448, 'S', 3],[251.0, 30, 'days', 4],[275.0, 70, '%', 4],[411.0, 3, 'min', 6],[520.0, 5.8, '%', 8]

P
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221759, 221759)
Stability enhancement of IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell using two-step post-treated PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 0.9, 'to', 3],[189.0, 1448, 'S', 3],[243.0, 30, 'days', 4],[267.0, 70, '%', 4],[403.0, 3, 'min', 6],[512.0, 5.8, '%', 8]

B7PC71B
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221761, 221766)
Stability enhancement of IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell using two-step post-treated PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0.1,0.8875,0,0,0,0,0,0,0,0,0.0125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 0.9, 'to', 3],[182.0, 1448, 'S', 3],[236.0, 30, 'days', 4],[260.0, 70, '%', 4],[396.0, 3, 'min', 6],[505.0, 5.8, '%', 8]

P
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221783, 221783)
Stability enhancement of IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell using two-step post-treated PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.9, 'to', 3],[165.0, 1448, 'S', 3],[219.0, 30, 'days', 4],[243.0, 70, '%', 4],[379.0, 3, 'min', 6],[488.0, 5.8, '%', 8]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221786, 221786)
Stability enhancement of IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell using two-step post-treated PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 0.9, 'to', 3],[162.0, 1448, 'S', 3],[216.0, 30, 'days', 4],[240.0, 70, '%', 4],[376.0, 3, 'min', 6],[485.0, 5.8, '%', 8]

PSS
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221788, 221790)
Stability enhancement of IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell using two-step post-treated PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 0.9, 'to', 3],[158.0, 1448, 'S', 3],[212.0, 30, 'days', 4],[236.0, 70, '%', 4],[372.0, 3, 'min', 6],[481.0, 5.8, '%', 8]

P
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221807, 221807)
 The conductivity and stability of specially treated PEDOT<missing VAR>PSS thin films areinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.9, 'to', 2],[141.0, 1448, 'S', 2],[195.0, 30, 'days', 3],[219.0, 70, '%', 3],[355.0, 3, 'min', 5],[464.0, 5.8, '%', 7]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221810, 221810)
 The conductivity and stability of specially treated PEDOT<missing VAR>PSS thin films areinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.9, 'to', 2],[138.0, 1448, 'S', 2],[192.0, 30, 'days', 3],[216.0, 70, '%', 3],[352.0, 3, 'min', 5],[461.0, 5.8, '%', 7]

PSS
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221812, 221814)
 The conductivity and stability of specially treated PEDOT<missing VAR>PSS thin films areinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0.9, 'to', 2],[134.0, 1448, 'S', 2],[188.0, 30, 'days', 3],[212.0, 70, '%', 3],[348.0, 3, 'min', 5],[457.0, 5.8, '%', 7]

I
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221839, 221839)
 Based on the proposed treatment method, IT<missing VAR>O-free PT<missing VAR>B7PC71BM<missing VAR>organic solar cells are fabricated and the electrical properties of the cellsare analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.9, 'to', 1],[109.0, 1448, 'S', 1],[163.0, 30, 'days', 2],[187.0, 70, '%', 2],[323.0, 3, 'min', 4],[432.0, 5.8, '%', 6]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221841, 221841)
 Based on the proposed treatment method, IT<missing VAR>O-free PT<missing VAR>B7PC71BM<missing VAR>organic solar cells are fabricated and the electrical properties of the cellsare analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0.9, 'to', 1],[107.0, 1448, 'S', 1],[161.0, 30, 'days', 2],[185.0, 70, '%', 2],[321.0, 3, 'min', 4],[430.0, 5.8, '%', 6]

P
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221845, 221845)
 Based on the proposed treatment method, IT<missing VAR>O-free PT<missing VAR>B7PC71BM<missing VAR>organic solar cells are fabricated and the electrical properties of the cellsare analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.9, 'to', 1],[103.0, 1448, 'S', 1],[157.0, 30, 'days', 2],[181.0, 70, '%', 2],[317.0, 3, 'min', 4],[426.0, 5.8, '%', 6]

B7PC71B
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221847, 221852)
 Based on the proposed treatment method, IT<missing VAR>O-free PT<missing VAR>B7PC71BM<missing VAR>organic solar cells are fabricated and the electrical properties of the cellsare analyzed.
Featurization terminated normally.
0,0,0,0,0.1,0.8875,0,0,0,0,0,0,0,0,0.0125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.9, 'to', 1],[96.0, 1448, 'S', 1],[150.0, 30, 'days', 2],[174.0, 70, '%', 2],[310.0, 3, 'min', 4],[419.0, 5.8, '%', 6]

P
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221930, 221930)
 It is shown that by applying a two-step post-treatment methodusing methanol and ethylene glycol, the conductivity of the PEDOT<missing VAR>PSS thin filmincreases from 0.9 to 1448 S/cm, and at the same time, a significantimprovement of the stability of the layer over time is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.9, 'to', 0],[18.0, 1448, 'S', 0],[72.0, 30, 'days', 1],[96.0, 70, '%', 1],[232.0, 3, 'min', 3],[341.0, 5.8, '%', 5]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221933, 221933)
 It is shown that by applying a two-step post-treatment methodusing methanol and ethylene glycol, the conductivity of the PEDOT<missing VAR>PSS thin filmincreases from 0.9 to 1448 S/cm, and at the same time, a significantimprovement of the stability of the layer over time is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.9, 'to', 0],[15.0, 1448, 'S', 0],[69.0, 30, 'days', 1],[93.0, 70, '%', 1],[229.0, 3, 'min', 3],[338.0, 5.8, '%', 5]

PSS
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(221935, 221937)
 It is shown that by applying a two-step post-treatment methodusing methanol and ethylene glycol, the conductivity of the PEDOT<missing VAR>PSS thin filmincreases from 0.9 to 1448 S/cm, and at the same time, a significantimprovement of the stability of the layer over time is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.9, 'to', 0],[11.0, 1448, 'S', 0],[65.0, 30, 'days', 1],[89.0, 70, '%', 1],[225.0, 3, 'min', 3],[334.0, 5.8, '%', 5]

In
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222066, 222066)
 In this paper, important factorsaffecting the conductivity and stability of the treated layer are studied indetail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0.9, 'to', 2],[118.0, 1448, 'S', 2],[64.0, 30, 'days', 1],[40.0, 70, '%', 1],[96.0, 3, 'min', 1],[205.0, 5.8, '%', 3]

In
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222106, 222106)
 In addition, the effect of immersion time in methanol on theconductivity of the layer is also investigated and it is found that dippingtimes less than 3 min have no appreciable effects on the improvement of theconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 0.9, 'to', 3],[158.0, 1448, 'S', 3],[104.0, 30, 'days', 2],[80.0, 70, '%', 2],[56.0, 3, 'min', 0],[165.0, 5.8, '%', 2]

I
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222188, 222188)
 An IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell is alsofabricated using the proposed post-treated PEDOT<missing VAR>PSS thin films as thetransparent anode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0.9, 'to', 4],[240.0, 1448, 'S', 4],[186.0, 30, 'days', 3],[162.0, 70, '%', 3],[26.0, 3, 'min', 1],[83.0, 5.8, '%', 1]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222190, 222190)
 An IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell is alsofabricated using the proposed post-treated PEDOT<missing VAR>PSS thin films as thetransparent anode.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 0.9, 'to', 4],[242.0, 1448, 'S', 4],[188.0, 30, 'days', 3],[164.0, 70, '%', 3],[28.0, 3, 'min', 1],[81.0, 5.8, '%', 1]

P
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222198, 222198)
 An IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell is alsofabricated using the proposed post-treated PEDOT<missing VAR>PSS thin films as thetransparent anode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 0.9, 'to', 4],[250.0, 1448, 'S', 4],[196.0, 30, 'days', 3],[172.0, 70, '%', 3],[36.0, 3, 'min', 1],[73.0, 5.8, '%', 1]

B7PC71B
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222200, 222205)
 An IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell is alsofabricated using the proposed post-treated PEDOT<missing VAR>PSS thin films as thetransparent anode.
Featurization terminated normally.
0,0,0,0,0.1,0.8875,0,0,0,0,0,0,0,0,0.0125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 0.9, 'to', 4],[252.0, 1448, 'S', 4],[198.0, 30, 'days', 3],[174.0, 70, '%', 3],[38.0, 3, 'min', 1],[66.0, 5.8, '%', 1]

P
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222229, 222229)
 An IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell is alsofabricated using the proposed post-treated PEDOT<missing VAR>PSS thin films as thetransparent anode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 0.9, 'to', 4],[281.0, 1448, 'S', 4],[227.0, 30, 'days', 3],[203.0, 70, '%', 3],[67.0, 3, 'min', 1],[42.0, 5.8, '%', 1]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222232, 222232)
 An IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell is alsofabricated using the proposed post-treated PEDOT<missing VAR>PSS thin films as thetransparent anode.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 0.9, 'to', 4],[284.0, 1448, 'S', 4],[230.0, 30, 'days', 3],[206.0, 70, '%', 3],[70.0, 3, 'min', 1],[39.0, 5.8, '%', 1]

PSS
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222234, 222236)
 An IT<missing VAR>O-free non-inverted PT<missing VAR>B7PC71BM<missing VAR> solar cell is alsofabricated using the proposed post-treated PEDOT<missing VAR>PSS thin films as thetransparent anode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 0.9, 'to', 4],[286.0, 1448, 'S', 4],[232.0, 30, 'days', 3],[208.0, 70, '%', 3],[72.0, 3, 'min', 1],[35.0, 5.8, '%', 1]

I
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222285, 222285)
 The stability of the fabricated IT<missing VAR>O-free cells is considerably betterthan the stability of the non-treated IT<missing VAR>O-free cells or the cells made usingIT<missing VAR>O as anode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 0.9, 'to', 6],[337.0, 1448, 'S', 6],[283.0, 30, 'days', 5],[259.0, 70, '%', 5],[123.0, 3, 'min', 3],[14.0, 5.8, '%', 1]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222287, 222287)
 The stability of the fabricated IT<missing VAR>O-free cells is considerably betterthan the stability of the non-treated IT<missing VAR>O-free cells or the cells made usingIT<missing VAR>O as anode.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 0.9, 'to', 6],[339.0, 1448, 'S', 6],[285.0, 30, 'days', 5],[261.0, 70, '%', 5],[125.0, 3, 'min', 3],[16.0, 5.8, '%', 1]

I
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222314, 222314)
 The stability of the fabricated IT<missing VAR>O-free cells is considerably betterthan the stability of the non-treated IT<missing VAR>O-free cells or the cells made usingIT<missing VAR>O as anode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 0.9, 'to', 6],[366.0, 1448, 'S', 6],[312.0, 30, 'days', 5],[288.0, 70, '%', 5],[152.0, 3, 'min', 3],[43.0, 5.8, '%', 1]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222316, 222316)
 The stability of the fabricated IT<missing VAR>O-free cells is considerably betterthan the stability of the non-treated IT<missing VAR>O-free cells or the cells made usingIT<missing VAR>O as anode.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 0.9, 'to', 6],[368.0, 1448, 'S', 6],[314.0, 30, 'days', 5],[290.0, 70, '%', 5],[154.0, 3, 'min', 3],[45.0, 5.8, '%', 1]

I
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222333, 222333)
 The stability of the fabricated IT<missing VAR>O-free cells is considerably betterthan the stability of the non-treated IT<missing VAR>O-free cells or the cells made usingIT<missing VAR>O as anode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 0.9, 'to', 6],[385.0, 1448, 'S', 6],[331.0, 30, 'days', 5],[307.0, 70, '%', 5],[171.0, 3, 'min', 3],[62.0, 5.8, '%', 1]

O
###Stability enhancement of ITO-free non-inverted PTB7:PC71BM solar cell using two-step post-treated PEDOT:PSS|Mehrdad Kankanan,Abdolnabi Kosarian,Ebrahim Farshidi###
(222335, 222335)
 The stability of the fabricated IT<missing VAR>O-free cells is considerably betterthan the stability of the non-treated IT<missing VAR>O-free cells or the cells made usingIT<missing VAR>O as anode.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 0.9, 'to', 6],[387.0, 1448, 'S', 6],[333.0, 30, 'days', 5],[309.0, 70, '%', 5],[173.0, 3, 'min', 3],[64.0, 5.8, '%', 1]

InGaAs
###Impact of excitation energy on hot carrier properties in InGaAs MQW structure|Hamidreza Esmaielpour,Laurent Lombez,Maxime Giteau,Jean-Francois Guillemoles,Daniel Suchet###
(222368, 222370)
Impact of excitation energy on hot carrier properties in InGaAs MQW structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Impact of excitation energy on hot carrier properties in InGaAs MQW structure|Hamidreza Esmaielpour,Laurent Lombez,Maxime Giteau,Jean-Francois Guillemoles,Daniel Suchet###
(222374, 222374)
Impact of excitation energy on hot carrier properties in InGaAs MQW structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaAs
###Impact of excitation energy on hot carrier properties in InGaAs MQW structure|Hamidreza Esmaielpour,Laurent Lombez,Maxime Giteau,Jean-Francois Guillemoles,Daniel Suchet###
(222568, 222570)
 Here, the impact ofexcitation energy on the properties of photo-generated hot carriers in anInGaAs multi-quantum well (MQW) structure at various lattice temperatures andexcitation powers is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Impact of excitation energy on hot carrier properties in InGaAs MQW structure|Hamidreza Esmaielpour,Laurent Lombez,Maxime Giteau,Jean-Francois Guillemoles,Daniel Suchet###
(222581, 222581)
 Here, the impact ofexcitation energy on the properties of photo-generated hot carriers in anInGaAs multi-quantum well (MQW) structure at various lattice temperatures andexcitation powers is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Impact of excitation energy on hot carrier properties in InGaAs MQW structure|Hamidreza Esmaielpour,Laurent Lombez,Maxime Giteau,Jean-Francois Guillemoles,Daniel Suchet###
(222609, 222609)
 Photoluminescence (PL) emission of the sample isdetected by a hyperspectral luminescence imager, which creates spectrally andspatially resolved PL<missing VAR> maps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Impact of excitation energy on hot carrier properties in InGaAs MQW structure|Hamidreza Esmaielpour,Laurent Lombez,Maxime Giteau,Jean-Francois Guillemoles,Daniel Suchet###
(222650, 222650)
 Photoluminescence (PL) emission of the sample isdetected by a hyperspectral luminescence imager, which creates spectrally andspatially resolved PL<missing VAR> maps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Impact of excitation energy on hot carrier properties in InGaAs MQW structure|Hamidreza Esmaielpour,Laurent Lombez,Maxime Giteau,Jean-Francois Guillemoles,Daniel Suchet###
(222700, 222700)
 The thermodynamic properties of hot carriers, suchas temperature and quasi-Fermi level splitting, are carefully determined viaapplying full PL<missing VAR> spectrum fitting, which solves the Fermi-Dirac integral andconsiders the band-filling effect in the nanostructured material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Impact of excitation energy on hot carrier properties in InGaAs MQW structure|Hamidreza Esmaielpour,Laurent Lombez,Maxime Giteau,Jean-Francois Guillemoles,Daniel Suchet###
(222742, 222742)
 In addition,the impact of thermalized power density and carrier scattering withlongitudinal optical phonons on the spectral linewidth broadening under twoexcitation energies is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnS
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(222817, 222818)
n<missing VAR>-type electrical conduction in SnS thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 18, 'cm', 3],[218.0, -1, ',', 3]

(SnS)
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(222829, 222832)
 Tin monosulfide (SnS) usually exhibits p<missing VAR>-type conduction due to the lowformation enthalpy of acceptor-type defects, and as a result n<missing VAR>-type SnS thinfilms have never been obtained.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 18, 'cm', 2],[204.0, -1, ',', 2]

SnS
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(222878, 222879)
 Tin monosulfide (SnS) usually exhibits p<missing VAR>-type conduction due to the lowformation enthalpy of acceptor-type defects, and as a result n<missing VAR>-type SnS thinfilms have never been obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 18, 'cm', 2],[157.0, -1, ',', 2]

SnS
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(222909, 222910)
 This study realizes n<missing VAR>-type conduction in SnSthin films for the first time by using R<missing VAR>F-magnetron sputtering with Cl dopingand sulfur plasma source during deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 18, 'cm', 1],[126.0, -1, ',', 1]

F
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(222930, 222930)
 This study realizes n<missing VAR>-type conduction in SnSthin films for the first time by using R<missing VAR>F-magnetron sputtering with Cl dopingand sulfur plasma source during deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 18, 'cm', 1],[106.0, -1, ',', 1]

Cl
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(222938, 222938)
 This study realizes n<missing VAR>-type conduction in SnSthin films for the first time by using R<missing VAR>F-magnetron sputtering with Cl dopingand sulfur plasma source during deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 18, 'cm', 1],[98.0, -1, ',', 1]

N
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(222956, 222956)
 N-type SnS thin films are obtainedat all the substrate temperatures employed in this study (221-341 C),exhibiting carrier concentrations and Hall mobilities of 2 x<missing VAR> 10 18 cm-3 and0.1-1 cm V-1s<missing VAR>-1, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 18, 'cm', 0],[80.0, -1, ',', 0]

SnS
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(222960, 222961)
 N-type SnS thin films are obtainedat all the substrate temperatures employed in this study (221-341 C),exhibiting carrier concentrations and Hall mobilities of 2 x<missing VAR> 10 18 cm-3 and0.1-1 cm V-1s<missing VAR>-1, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 18, 'cm', 0],[75.0, -1, ',', 0]

C
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(222995, 222995)
 N-type SnS thin films are obtainedat all the substrate temperatures employed in this study (221-341 C),exhibiting carrier concentrations and Hall mobilities of 2 x<missing VAR> 10 18 cm-3 and0.1-1 cm V-1s<missing VAR>-1, respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 18, 'cm', 0],[41.0, -1, ',', 0]

V
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(223032, 223032)
 N-type SnS thin films are obtainedat all the substrate temperatures employed in this study (221-341 C),exhibiting carrier concentrations and Hall mobilities of 2 x<missing VAR> 10 18 cm-3 and0.1-1 cm V-1s<missing VAR>-1, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 18, 'cm', 0],[4.0, -1, ',', 0]

Cl
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(223089, 223089)
 The films prepared without sulfur plasma source,on the other hand, exhibit p<missing VAR>-type conduction despite containing a comparableamount of Cl donors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 18, 'cm', 1],[53.0, -1, ',', 1]

SnS
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(223171, 223172)
 The demonstration ofn<missing VAR>-type SnS thin films in this study is a breakthrough for the realization ofSnS homojunction solar cells, which are expected to have a higher conversionefficiency than the conventional heterojunction SnS solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 18, 'cm', 3],[135.0, -1, ',', 3]

SnS
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(223199, 223200)
 The demonstration ofn<missing VAR>-type SnS thin films in this study is a breakthrough for the realization ofSnS homojunction solar cells, which are expected to have a higher conversionefficiency than the conventional heterojunction SnS solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 18, 'cm', 3],[163.0, -1, ',', 3]

SnS
###n-type electrical conduction in SnS thin films|Issei Suzuki,Sakiko Kawanishi,Sage R. Bauers,Andriy Zakutayev,Zexin Lin,Satoshi Tsukuda,Hiroyuki Shibata,Minseok Kim,Hiroshi Yanagi,Takahisa Omata###
(223236, 223237)
 The demonstration ofn<missing VAR>-type SnS thin films in this study is a breakthrough for the realization ofSnS homojunction solar cells, which are expected to have a higher conversionefficiency than the conventional heterojunction SnS solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 18, 'cm', 3],[200.0, -1, ',', 3]

PP
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223257, 223258)
Implementation of M<missing VAR>PPT<missing VAR> Technique of Solar Module with Supervised Machine Learning.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223278, 223278)
 In this paper, we proposed a method using supervised ML in solar PV systemfor M<missing VAR>PPT<missing VAR> analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223304, 223305)
 In this paper, we proposed a method using supervised ML in solar PV systemfor M<missing VAR>PPT<missing VAR> analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223313, 223314)
 In this paper, we proposed a method using supervised ML in solar PV systemfor M<missing VAR>PPT<missing VAR> analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223339, 223340)
 For this purpose, an overall schematic diagram of a PVsystem is designed and simulated to create a dataset in MATLAB/ Simulink.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223368, 223368)
 For this purpose, an overall schematic diagram of a PVsystem is designed and simulated to create a dataset in MATLAB/ Simulink.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223402, 223403)
 Thus,by analyzing the output characteristics of a solar cell, an improved M<missing VAR>PPT<missing VAR>algorithm on the basis of neural network (NN) method is put forward to trackthe maximum power point (M<missing VAR>PP) of solar cell modules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NN)
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223421, 223424)
 Thus,by analyzing the output characteristics of a solar cell, an improved M<missing VAR>PPT<missing VAR>algorithm on the basis of neural network (NN) method is put forward to trackthe maximum power point (M<missing VAR>PP) of solar cell modules.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223450, 223450)
 Thus,by analyzing the output characteristics of a solar cell, an improved M<missing VAR>PPT<missing VAR>algorithm on the basis of neural network (NN) method is put forward to trackthe maximum power point (M<missing VAR>PP) of solar cell modules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NN
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223541, 223542)
 Thetheoretical results show that the improved NN M<missing VAR>PPT<missing VAR> algorithm has higherefficiency compared with the Perturb and Observe method in the sameenvironment, and the PV system can keep working at M<missing VAR>PP without oscillation andprobability of any kind of misjudgment.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223545, 223546)
 Thetheoretical results show that the improved NN M<missing VAR>PPT<missing VAR> algorithm has higherefficiency compared with the Perturb and Observe method in the sameenvironment, and the PV system can keep working at M<missing VAR>PP without oscillation andprobability of any kind of misjudgment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223586, 223587)
 Thetheoretical results show that the improved NN M<missing VAR>PPT<missing VAR> algorithm has higherefficiency compared with the Perturb and Observe method in the sameenvironment, and the PV system can keep working at M<missing VAR>PP without oscillation andprobability of any kind of misjudgment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223600, 223601)
 Thetheoretical results show that the improved NN M<missing VAR>PPT<missing VAR> algorithm has higherefficiency compared with the Perturb and Observe method in the sameenvironment, and the PV system can keep working at M<missing VAR>PP without oscillation andprobability of any kind of misjudgment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Implementation of MPPT Technique of Solar Module with Supervised Machine Learning|Ruhi Sharmin,Sayeed Shafayet Chowdhury,Farihal Abedin,Kazi Mujibur Rahman###
(223654, 223655)
 So it can not only reduce misjudgment,but also avoid power loss around the M<missing VAR>PP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224246, 224246)
 However, scaling is limited by slow, high-temperatureannealing of the inorganic transport layers and the lack of reliable,large-area methods for depositing thin (< 30 nm) charge transport layers(CT<missing VAR>Ls).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 30, 'nm', 0],[205.0, 15, '%', 3],[243.0, 22.4, 'mA', 3],[271.0, 60, 'X', 4]

Ni
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224266, 224266)
 We present a method for scaling ultrathin NiOx hole transport layers(HT<missing VAR>Ls) by pairing high-speed (60 m<missing VAR>/min) flexographic printing with rapidlyannealed sol-gel inks to achieve the fastest reported process for fabricationof inorganic CT<missing VAR>Ls for perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 30, 'nm', 1],[185.0, 15, '%', 2],[223.0, 22.4, 'mA', 2],[251.0, 60, 'X', 3]

H
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224277, 224277)
 We present a method for scaling ultrathin NiOx hole transport layers(HT<missing VAR>Ls) by pairing high-speed (60 m<missing VAR>/min) flexographic printing with rapidlyannealed sol-gel inks to achieve the fastest reported process for fabricationof inorganic CT<missing VAR>Ls for perovskites.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 30, 'nm', 1],[174.0, 15, '%', 2],[212.0, 22.4, 'mA', 2],[240.0, 60, 'X', 3]

C
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224336, 224336)
 We present a method for scaling ultrathin NiOx hole transport layers(HT<missing VAR>Ls) by pairing high-speed (60 m<missing VAR>/min) flexographic printing with rapidlyannealed sol-gel inks to achieve the fastest reported process for fabricationof inorganic CT<missing VAR>Ls for perovskites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 30, 'nm', 1],[115.0, 15, '%', 2],[153.0, 22.4, 'mA', 2],[181.0, 60, 'X', 3]

Ni
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224363, 224363)
 By engineering precursor rheology for rapidfilm-leveling, NiOx HT<missing VAR>Ls were printed with high uniformity and ultralow pinholedensities resulting in photovoltaic performance exceeding that of spin-coateddevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 30, 'nm', 2],[88.0, 15, '%', 1],[126.0, 22.4, 'mA', 1],[154.0, 60, 'X', 2]

H
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224366, 224366)
 By engineering precursor rheology for rapidfilm-leveling, NiOx HT<missing VAR>Ls were printed with high uniformity and ultralow pinholedensities resulting in photovoltaic performance exceeding that of spin-coateddevices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 30, 'nm', 2],[85.0, 15, '%', 1],[123.0, 22.4, 'mA', 1],[151.0, 60, 'X', 2]

PSCs
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224427, 224429)
 Integrating these printed transport layers in planar inverted PSCsallows rapid fabrication of high efficiency (PCE<missing VAR> > 15%) Cs(x)FA(1-x)PbI solarcells with improved short circuit currents (Jsc) of 22.4 mA/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 30, 'nm', 3],[22.0, 15, '%', 0],[60.0, 22.4, 'mA', 0],[88.0, 60, 'X', 1]

PC
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224445, 224446)
 Integrating these printed transport layers in planar inverted PSCsallows rapid fabrication of high efficiency (PCE<missing VAR> > 15%) Cs(x)FA(1-x)PbI solarcells with improved short circuit currents (Jsc) of 22.4 mA/cm2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 30, 'nm', 3],[5.0, 15, '%', 0],[43.0, 22.4, 'mA', 0],[71.0, 60, 'X', 1]

Cs
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224455, 224455)
 Integrating these printed transport layers in planar inverted PSCsallows rapid fabrication of high efficiency (PCE<missing VAR> > 15%) Cs(x)FA(1-x)PbI solarcells with improved short circuit currents (Jsc) of 22.4 mA/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 30, 'nm', 3],[4.0, 15, '%', 0],[34.0, 22.4, 'mA', 0],[62.0, 60, 'X', 1]

F
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224459, 224459)
 Integrating these printed transport layers in planar inverted PSCsallows rapid fabrication of high efficiency (PCE<missing VAR> > 15%) Cs(x)FA(1-x)PbI solarcells with improved short circuit currents (Jsc) of 22.4 mA/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 30, 'nm', 3],[8.0, 15, '%', 0],[30.0, 22.4, 'mA', 0],[58.0, 60, 'X', 1]

PbI
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224466, 224467)
 Integrating these printed transport layers in planar inverted PSCsallows rapid fabrication of high efficiency (PCE<missing VAR> > 15%) Cs(x)FA(1-x)PbI solarcells with improved short circuit currents (Jsc) of 22.4 mA/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 30, 'nm', 3],[15.0, 15, '%', 0],[22.0, 22.4, 'mA', 0],[50.0, 60, 'X', 1]

H
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224504, 224504)
 Rapidannealing of the HTL accelerates total processing time by 60X, whilemaintaining the required balance of optoelectronic properties and the chemicalcomposition for effective hole collection.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 30, 'nm', 4],[53.0, 15, '%', 1],[15.0, 22.4, 'mA', 1],[13.0, 60, 'X', 0]

Ni
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224572, 224572)
 These results build an improvedunderstanding of ultrathin NiOx and reveal opportunities to enhance deviceperformance via scalable manufacturing of inorganic CT<missing VAR>Ls.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 30, 'nm', 5],[121.0, 15, '%', 2],[83.0, 22.4, 'mA', 2],[55.0, 60, 'X', 1]

C
###Eliminating the Perovskite Solar Cell Manufacturing Bottleneck via High-Speed Flexography|Julia E. Huddy,Youxiong Ye,William J. Scheideler###
(224600, 224600)
 These results build an improvedunderstanding of ultrathin NiOx and reveal opportunities to enhance deviceperformance via scalable manufacturing of inorganic CT<missing VAR>Ls.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 30, 'nm', 5],[149.0, 15, '%', 2],[111.0, 22.4, 'mA', 2],[83.0, 60, 'X', 1]

CPV/PV
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224625, 224630)
Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[79.0, 34.2, '%', 2],[330.0, 35, '%', 5],[369.0, 50, '%', 5]

V
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224668, 224668)
 Hybridization of multi-junction concentrator photovoltaics withsingle-junction flat plate solar cells (CPV/PV) can deliver the highest poweroutput per module area of any PV technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 34.2, '%', 1],[292.0, 35, '%', 4],[331.0, 50, '%', 4]

PV
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224694, 224695)
 Hybridization of multi-junction concentrator photovoltaics withsingle-junction flat plate solar cells (CPV/PV) can deliver the highest poweroutput per module area of any PV technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 34.2, '%', 1],[265.0, 35, '%', 4],[304.0, 50, '%', 4]

III
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224757, 224759)
 Conversion efficiencies up to34.2% have been published under the AM1.5g spectrum at standard test conditionsfor the EyeCon module which combines Fresnel lenses and III-V four-junctionsolar cells with bifacial c<missing VAR>-Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 34.2, '%', 0],[201.0, 35, '%', 3],[240.0, 50, '%', 3]

V
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224761, 224761)
 Conversion efficiencies up to34.2% have been published under the AM1.5g spectrum at standard test conditionsfor the EyeCon module which combines Fresnel lenses and III-V four-junctionsolar cells with bifacial c<missing VAR>-Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 34.2, '%', 0],[199.0, 35, '%', 3],[238.0, 50, '%', 3]

Si
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224778, 224778)
 Conversion efficiencies up to34.2% have been published under the AM1.5g spectrum at standard test conditionsfor the EyeCon module which combines Fresnel lenses and III-V four-junctionsolar cells with bifacial c<missing VAR>-Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 34.2, '%', 0],[182.0, 35, '%', 3],[221.0, 50, '%', 3]

CPV
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224804, 224806)
 We investigate here its energy yield andcompare it to conventional CPV as well as flat plate PV.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 34.2, '%', 1],[154.0, 35, '%', 2],[193.0, 50, '%', 2]

PV
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224818, 224819)
 We investigate here its energy yield andcompare it to conventional CPV as well as flat plate PV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 34.2, '%', 1],[141.0, 35, '%', 2],[180.0, 50, '%', 2]

CPV/PV
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224833, 224838)
 The advantage of thehybrid CPV/PV module is that it converts direct sunlight with the most advancedmulti-junction cell technology, while accessing diffuse, lens-scattered andback side irradiance with a Si cell that also serves as the heat distributorfor the concentrator cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[124.0, 34.2, '%', 2],[122.0, 35, '%', 1],[161.0, 50, '%', 1]

Si
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224896, 224896)
 The advantage of thehybrid CPV/PV module is that it converts direct sunlight with the most advancedmulti-junction cell technology, while accessing diffuse, lens-scattered andback side irradiance with a Si cell that also serves as the heat distributorfor the concentrator cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 34.2, '%', 2],[64.0, 35, '%', 1],[103.0, 50, '%', 1]

CPV/PV
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(224936, 224941)
 This article quantifies that hybrid bifacial CPV/PVmodules are expected to generate a 25 - 35% higher energy yield with respect totheir closest competitor in regions with a diffuse irradiance fraction around50%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[227.0, 34.2, '%', 3],[19.0, 35, '%', 0],[58.0, 50, '%', 0]

CPV/PV
###Worldwide Energy Harvesting Potential of Hybrid CPV/PV Technology|Juan F. Martínez,Marc Steiner,Maike Wiesenfarth,Henning Helmers,Gerald Siefer,Stefan W. Glunz,Frank Dimroth###
(225022, 225027)
 Additionally, the relative cost of electricity generated by hybrid CPV/PVtechnology was calculated worldwide under certain economic assumptions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[313.0, 34.2, '%', 4],[62.0, 35, '%', 1],[23.0, 50, '%', 1]

Sn
###Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells|Hejin Yan,Bowen Wang,Xuefei Yan,Qiye Guan,Hongfei Chen,Zheng Shu,Dawei Wen,Yongqing Cai###
(225263, 225263)
 Herein, we demonstrate, throughthe density functional theory based first-principle calculations in a surfaceslab model, that the surface defects of the Sn-based perovskite FASnI3 (FA NH2CHNH2+) could be effectively passivated by the Lewis base molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells|Hejin Yan,Bowen Wang,Xuefei Yan,Qiye Guan,Hongfei Chen,Zheng Shu,Dawei Wen,Yongqing Cai###
(225269, 225269)
 Herein, we demonstrate, throughthe density functional theory based first-principle calculations in a surfaceslab model, that the surface defects of the Sn-based perovskite FASnI3 (FA NH2CHNH2+) could be effectively passivated by the Lewis base molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnI3
###Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells|Hejin Yan,Bowen Wang,Xuefei Yan,Qiye Guan,Hongfei Chen,Zheng Shu,Dawei Wen,Yongqing Cai###
(225271, 225273)
 Herein, we demonstrate, throughthe density functional theory based first-principle calculations in a surfaceslab model, that the surface defects of the Sn-based perovskite FASnI3 (FA NH2CHNH2+) could be effectively passivated by the Lewis base molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells|Hejin Yan,Bowen Wang,Xuefei Yan,Qiye Guan,Hongfei Chen,Zheng Shu,Dawei Wen,Yongqing Cai###
(225276, 225276)
 Herein, we demonstrate, throughthe density functional theory based first-principle calculations in a surfaceslab model, that the surface defects of the Sn-based perovskite FASnI3 (FA NH2CHNH2+) could be effectively passivated by the Lewis base molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(VSn)
###Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells|Hejin Yan,Bowen Wang,Xuefei Yan,Qiye Guan,Hongfei Chen,Zheng Shu,Dawei Wen,Yongqing Cai###
(225403, 225406)
 We reveal that the degree ofhardness of Lewis adsorbate governs the stabilization via dual effects first,changing the stubborn spatial distribution of tin vacancy (VSn) by triggeringcharge redistribution; second, saturating the dangling states whilesimultaneously reducing the amounts of deep band gap states.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells|Hejin Yan,Bowen Wang,Xuefei Yan,Qiye Guan,Hongfei Chen,Zheng Shu,Dawei Wen,Yongqing Cai###
(225470, 225470)
 Specifically, thehard Lewis base molecules like edamine (N-donor group) and Isatin-Cl (Cl-donorgroup) would show a better healing effect than other candidates on thedefects-contained tin-based perovskite surface with a somehow hard Lewis acidnature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells|Hejin Yan,Bowen Wang,Xuefei Yan,Qiye Guan,Hongfei Chen,Zheng Shu,Dawei Wen,Yongqing Cai###
(225481, 225481)
 Specifically, thehard Lewis base molecules like edamine (N-donor group) and Isatin-Cl (Cl-donorgroup) would show a better healing effect than other candidates on thedefects-contained tin-based perovskite surface with a somehow hard Lewis acidnature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells|Hejin Yan,Bowen Wang,Xuefei Yan,Qiye Guan,Hongfei Chen,Zheng Shu,Dawei Wen,Yongqing Cai###
(225484, 225484)
 Specifically, thehard Lewis base molecules like edamine (N-donor group) and Isatin-Cl (Cl-donorgroup) would show a better healing effect than other candidates on thedefects-contained tin-based perovskite surface with a somehow hard Lewis acidnature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Efficient Passivation of Surface Defects by Lewis Base in Lead-free Tin-based Perovskite Solar Cells|Hejin Yan,Bowen Wang,Xuefei Yan,Qiye Guan,Hongfei Chen,Zheng Shu,Dawei Wen,Yongqing Cai###
(225578, 225578)
 Our research provides a general strategy for additive engineering andfabricating stable and high-efficiency lead-free Sn-based perovskite solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225608, 225613)
Optimization of p-i-n<missing VAR> GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225636, 225636)
 In this study, we designed and optimized the performance of pin junctionGaAs/AlGaAs heterojunction nanowire solar cell arrays.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225662, 225667)
 In this study, we designed and optimized the performance of pin junctionGaAs/AlGaAs heterojunction nanowire solar cell arrays.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225711, 225712)
 It is done by performingcoupled optoelectronic simulations to find the optimal doping for the GaAs coreand AlGaAs shell, and to see the influence of GaAs and AlGaAs shell thicknessand junction positions on the solar cell performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225719, 225721)
 It is done by performingcoupled optoelectronic simulations to find the optimal doping for the GaAs coreand AlGaAs shell, and to see the influence of GaAs and AlGaAs shell thicknessand junction positions on the solar cell performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225738, 225739)
 It is done by performingcoupled optoelectronic simulations to find the optimal doping for the GaAs coreand AlGaAs shell, and to see the influence of GaAs and AlGaAs shell thicknessand junction positions on the solar cell performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225743, 225745)
 It is done by performingcoupled optoelectronic simulations to find the optimal doping for the GaAs coreand AlGaAs shell, and to see the influence of GaAs and AlGaAs shell thicknessand junction positions on the solar cell performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225945, 225947)
 The importance of thethickness and the passivation properties of the radial and axial AlGaAs layeris also examined and it has been observed that having a thick AlGaAs shell atthe cost of the i<missing VAR>-GaAs region can be detrimental to the performance due toincreased local carrier generation and recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225976, 225978)
 The importance of thethickness and the passivation properties of the radial and axial AlGaAs layeris also examined and it has been observed that having a thick AlGaAs shell atthe cost of the i<missing VAR>-GaAs region can be detrimental to the performance due toincreased local carrier generation and recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(225995, 225996)
 The importance of thethickness and the passivation properties of the radial and axial AlGaAs layeris also examined and it has been observed that having a thick AlGaAs shell atthe cost of the i<missing VAR>-GaAs region can be detrimental to the performance due toincreased local carrier generation and recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Optimization of p-i-n GaAs/AlGaAs Heterojunction Nanowire Solar Cell for improved Optical and Electrical Properties|Sambuddha Majumder,Sooraj Ravindran###
(226112, 226113)
 Finally, the effect ofhaving different Aluminium compositions (on the shell) on the photogenerationinside the nanowire is examined and it was observed that having a largeAluminium composition can confine most of the photogeneration to the inner GaAsregions, thus potentially allowing for thicker Aluminium shells which can moreefficiently prevent surface recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Enhancement of Hot Carrier Effects and Signatures of Confinement in Terms of Thermalization Power in Quantum Well Solar Cells|Imam Makhfudz,Nicolas Cavassilas,Maxime Giteau,Hamidreza Esmaielpour,Daniel Suchet,Anne-Marie Daré,Fabienne Michelini###
(226268, 226270)
 The model is applied to investigate the hot carriereffect in III-V hot-carrier solar cells with a quantum well absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Enhancement of Hot Carrier Effects and Signatures of Confinement in Terms of Thermalization Power in Quantum Well Solar Cells|Imam Makhfudz,Nicolas Cavassilas,Maxime Giteau,Hamidreza Esmaielpour,Daniel Suchet,Anne-Marie Daré,Fabienne Michelini###
(226272, 226272)
 The model is applied to investigate the hot carriereffect in III-V hot-carrier solar cells with a quantum well absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Enhancement of Hot Carrier Effects and Signatures of Confinement in Terms of Thermalization Power in Quantum Well Solar Cells|Imam Makhfudz,Nicolas Cavassilas,Maxime Giteau,Hamidreza Esmaielpour,Daniel Suchet,Anne-Marie Daré,Fabienne Michelini###
(226545, 226545)
 In particular, the two-dimensional thermalization power densityexhibits a non-monotonic dependence on the thickness of the quantum well layer,when both out-of-equilibrium longitudinal optical phonons and screening effectsare taken into account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Simulating multiple quantum well solar cells|James P. Connolly,Jenny Nelson,Keith W. J. Barnham,Ian Ballard,C. Roberts,J. S. Roberts,C. T. Foxon,.###
(226765, 226765)
 The quantum well solar cell (Q<missing VAR>WSC) has been proposed as a route to higherefficiency than that attainable by homojunction devices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Simulating multiple quantum well solar cells|James P. Connolly,Jenny Nelson,Keith W. J. Barnham,Ian Ballard,C. Roberts,J. S. Roberts,C. T. Foxon,.###
(226988, 226990)
 Here we present a model whichcalculates the incremental generation and recombination due to the Q<missing VAR>Ws and isverified by modelling the experimental light and dark current-voltagecharacteristics of a range of III-V quantum well structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Simulating multiple quantum well solar cells|James P. Connolly,Jenny Nelson,Keith W. J. Barnham,Ian Ballard,C. Roberts,J. S. Roberts,C. T. Foxon,.###
(226992, 226992)
 Here we present a model whichcalculates the incremental generation and recombination due to the Q<missing VAR>Ws and isverified by modelling the experimental light and dark current-voltagecharacteristics of a range of III-V quantum well structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227174, 227174)
 We have performed resistivity measurements ofpoly[3,4-ethylenedioxythiophene] poly[styrenesulfonate] (PEDOT<missing VAR>PSS) films withvarying concentrations of glycerol.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 3, ',', 1],[13.0, 3, ',', 0],[40.0, 3, 'ohm', 1],[58.0, 3, 'x', 1]

O
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227177, 227177)
 We have performed resistivity measurements ofpoly[3,4-ethylenedioxythiophene] poly[styrenesulfonate] (PEDOT<missing VAR>PSS) films withvarying concentrations of glycerol.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 3, ',', 1],[16.0, 3, ',', 0],[37.0, 3, 'ohm', 1],[55.0, 3, 'x', 1]

S
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227181, 227181)
 We have performed resistivity measurements ofpoly[3,4-ethylenedioxythiophene] poly[styrenesulfonate] (PEDOT<missing VAR>PSS) films withvarying concentrations of glycerol.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 3, ',', 1],[20.0, 3, ',', 0],[33.0, 3, 'ohm', 1],[51.0, 3, 'x', 1]

P
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227222, 227222)
 Resistivity is seen to decreaseexponentially from roughly 3 ohm-cm for pure PEDOT<missing VAR>PSS to 3x10-2 ohm-cm for 35mg/cm3 glycerol in PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 3, ',', 2],[61.0, 3, ',', 1],[8.0, 3, 'ohm', 0],[10.0, 3, 'x', 0]

O
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227225, 227225)
 Resistivity is seen to decreaseexponentially from roughly 3 ohm-cm for pure PEDOT<missing VAR>PSS to 3x10-2 ohm-cm for 35mg/cm3 glycerol in PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3, ',', 2],[64.0, 3, ',', 1],[11.0, 3, 'ohm', 0],[7.0, 3, 'x', 0]

PSS
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227227, 227229)
 Resistivity is seen to decreaseexponentially from roughly 3 ohm-cm for pure PEDOT<missing VAR>PSS to 3x10-2 ohm-cm for 35mg/cm3 glycerol in PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 3, ',', 2],[66.0, 3, ',', 1],[13.0, 3, 'ohm', 0],[3.0, 3, 'x', 0]

P
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227255, 227255)
 Resistivity is seen to decreaseexponentially from roughly 3 ohm-cm for pure PEDOT<missing VAR>PSS to 3x10-2 ohm-cm for 35mg/cm3 glycerol in PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 3, ',', 2],[94.0, 3, ',', 1],[41.0, 3, 'ohm', 0],[23.0, 3, 'x', 0]

O
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227258, 227258)
 Resistivity is seen to decreaseexponentially from roughly 3 ohm-cm for pure PEDOT<missing VAR>PSS to 3x10-2 ohm-cm for 35mg/cm3 glycerol in PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 3, ',', 2],[97.0, 3, ',', 1],[44.0, 3, 'ohm', 0],[26.0, 3, 'x', 0]

PSS
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227260, 227262)
 Resistivity is seen to decreaseexponentially from roughly 3 ohm-cm for pure PEDOT<missing VAR>PSS to 3x10-2 ohm-cm for 35mg/cm3 glycerol in PEDOT<missing VAR>PSS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 3, ',', 2],[99.0, 3, ',', 1],[46.0, 3, 'ohm', 0],[28.0, 3, 'x', 0]

P
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227306, 227306)
 Bulk heterojunction polymer solar cellsusing these variously doped PEDOT<missing VAR>PSS layers as electrodes were studied tocharacterize the effects on efficiency and lifetime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 3, ',', 4],[145.0, 3, ',', 3],[92.0, 3, 'ohm', 2],[74.0, 3, 'x', 2]

O
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227309, 227309)
 Bulk heterojunction polymer solar cellsusing these variously doped PEDOT<missing VAR>PSS layers as electrodes were studied tocharacterize the effects on efficiency and lifetime.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 4],[148.0, 3, ',', 3],[95.0, 3, 'ohm', 2],[77.0, 3, 'x', 2]

PSS
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227311, 227313)
 Bulk heterojunction polymer solar cellsusing these variously doped PEDOT<missing VAR>PSS layers as electrodes were studied tocharacterize the effects on efficiency and lifetime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 3, ',', 4],[150.0, 3, ',', 3],[97.0, 3, 'ohm', 2],[79.0, 3, 'x', 2]

P
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227367, 227367)
 Although our data displaysignificant scatter, lowering the resistance of the PEDOT<missing VAR>PSS layers results inlower device resistance and higher efficiency as expected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 3, ',', 5],[206.0, 3, ',', 4],[153.0, 3, 'ohm', 3],[135.0, 3, 'x', 3]

O
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227370, 227370)
 Although our data displaysignificant scatter, lowering the resistance of the PEDOT<missing VAR>PSS layers results inlower device resistance and higher efficiency as expected.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 3, ',', 5],[209.0, 3, ',', 4],[156.0, 3, 'ohm', 3],[138.0, 3, 'x', 3]

PSS
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227372, 227374)
 Although our data displaysignificant scatter, lowering the resistance of the PEDOT<missing VAR>PSS layers results inlower device resistance and higher efficiency as expected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 3, ',', 5],[211.0, 3, ',', 4],[158.0, 3, 'ohm', 3],[140.0, 3, 'x', 3]

P
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227438, 227438)
 We also note thatthe lifetime of the devices tends to be reduced as the glycerol content ofPEDOT<missing VAR>PSS is increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 3, ',', 6],[277.0, 3, ',', 5],[224.0, 3, 'ohm', 4],[206.0, 3, 'x', 4]

O
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227441, 227441)
 We also note thatthe lifetime of the devices tends to be reduced as the glycerol content ofPEDOT<missing VAR>PSS is increased.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 3, ',', 6],[280.0, 3, ',', 5],[227.0, 3, 'ohm', 4],[209.0, 3, 'x', 4]

PSS
###Resistance and lifetime measurements of polymer solar cells using glycerol doped poly[3,4-ethylenedioxythiophene]: poly[styrenesulfonate] hole injection layers|Emma Lewis,Bhaskar Mantha,Richard P. Barber Jr###
(227443, 227445)
 We also note thatthe lifetime of the devices tends to be reduced as the glycerol content ofPEDOT<missing VAR>PSS is increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 3, ',', 6],[282.0, 3, ',', 5],[229.0, 3, 'ohm', 4],[211.0, 3, 'x', 4]

C
###Electron beam induced current in photovoltaics with high recombination|Paul M. Haney,Heayoung P. Yoon,Prakash Koirala,Robert W. Collins,Nikolai B. Zhitenev###
(227562, 227562)
 Electron beam induced current (E<missing VAR>BIC) is a powerful characterization techniquewhich offers the high spatial resolution needed to study polycrystalline solarcells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BIC
###Electron beam induced current in photovoltaics with high recombination|Paul M. Haney,Heayoung P. Yoon,Prakash Koirala,Robert W. Collins,Nikolai B. Zhitenev###
(227608, 227610)
 Ideally, an E<missing VAR>BIC measurement reflects the spatially resolved quantumefficiency of the device.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electron beam induced current in photovoltaics with high recombination|Paul M. Haney,Heayoung P. Yoon,Prakash Koirala,Robert W. Collins,Nikolai B. Zhitenev###
(227634, 227634)
 In this work, a model for E<missing VAR>BIC measurements ispresented which applies when recombination within the depletion region issubstantial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BIC
###Electron beam induced current in photovoltaics with high recombination|Paul M. Haney,Heayoung P. Yoon,Prakash Koirala,Robert W. Collins,Nikolai B. Zhitenev###
(227648, 227650)
 In this work, a model for E<missing VAR>BIC measurements ispresented which applies when recombination within the depletion region issubstantial.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BIC
###Electron beam induced current in photovoltaics with high recombination|Paul M. Haney,Heayoung P. Yoon,Prakash Koirala,Robert W. Collins,Nikolai B. Zhitenev###
(227696, 227698)
 This model is motivated by cross-sectional E<missing VAR>BIC experiments onCdS-CdTe photovoltaic cells which show that the maximum efficiency of carriercollection is less than 100 % and varies throughout the depletion region.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Electron beam induced current in photovoltaics with high recombination|Paul M. Haney,Heayoung P. Yoon,Prakash Koirala,Robert W. Collins,Nikolai B. Zhitenev###
(227705, 227706)
 This model is motivated by cross-sectional E<missing VAR>BIC experiments onCdS-CdTe photovoltaic cells which show that the maximum efficiency of carriercollection is less than 100 % and varies throughout the depletion region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Electron beam induced current in photovoltaics with high recombination|Paul M. Haney,Heayoung P. Yoon,Prakash Koirala,Robert W. Collins,Nikolai B. Zhitenev###
(227708, 227709)
 This model is motivated by cross-sectional E<missing VAR>BIC experiments onCdS-CdTe photovoltaic cells which show that the maximum efficiency of carriercollection is less than 100 % and varies throughout the depletion region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NW
###Optimizing Photovoltaic Charge Generation of Nanowire Arrays: A Simple Semi-Analytic Approach|Björn C. P. Sturmberg,Kokou B. Dossou,Lindsay C. Botten,Ara A. Asatryan,Christopher G. Poulton,Ross C. McPhedran,C. Martijn de Sterke###
(228135, 228136)
 This provides a fast route to optimizing NW array cellefficiencies by greatly reducing the geometries to study with full devicemodels.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Network analysis of the performance of organic photovoltaic cells: The open circuit voltage and the zero current efficiency|Mario Einax,Abraham Nitzan###
(228526, 228526)
 In particular, the deviation from Carnots<missing VAR> efficiencyassociated with the exciton binding energy is quantified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPV)
###Performance Analysis and Fault Diagnosis Method for Concentrator Photovoltaic Modules|Harsh G. Kamath,Nicholas J. Ekins-Daukes,Kenji Araki,Sheela K. Ramasesha###
(228593, 228597)
 Concentrator Photovoltaic (CPV) systems use high efficiency multi-junctionsolar cells with efficiencies >40%, but the module efficiency is often muchlower.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 40, '%', 0]

CPV
###Performance Analysis and Fault Diagnosis Method for Concentrator Photovoltaic Modules|Harsh G. Kamath,Nicholas J. Ekins-Daukes,Kenji Araki,Sheela K. Ramasesha###
(228653, 228655)
 The increased complexity of a CPV module, with optics, receiver and thetracker gives an increased probability that faults will arise during theoperational lifetime.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 40, '%', 1]

In
###Performance Analysis and Fault Diagnosis Method for Concentrator Photovoltaic Modules|Harsh G. Kamath,Nicholas J. Ekins-Daukes,Kenji Araki,Sheela K. Ramasesha###
(228700, 228700)
 In addition, a location like India has varied atmosphericconditions that further complicates the diagnosis of faults.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 40, '%', 2]

CPV
###Performance Analysis and Fault Diagnosis Method for Concentrator Photovoltaic Modules|Harsh G. Kamath,Nicholas J. Ekins-Daukes,Kenji Araki,Sheela K. Ramasesha###
(228807, 228809)
 By applying acomputer model to outdoor CPV test data in Bangalore, India we have establisheda method to assess the performance of the CPV module and finally we present amethod to diagnose faults in the module.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 40, '%', 4]

CPV
###Performance Analysis and Fault Diagnosis Method for Concentrator Photovoltaic Modules|Harsh G. Kamath,Nicholas J. Ekins-Daukes,Kenji Araki,Sheela K. Ramasesha###
(228845, 228847)
 By applying acomputer model to outdoor CPV test data in Bangalore, India we have establisheda method to assess the performance of the CPV module and finally we present amethod to diagnose faults in the module.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 40, '%', 4]

Si
###High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions|Sarah Riazimehr,Satender Kataria,Jose-Maria González-Medina,Mehrdad Shaygan,Stephan Suckow,Francisco G. Ruiz,Olof Engström,Andres Godoy,Max Christian Lemme###
(228929, 228929)
 Graphene / silicon (G<missing VAR>/Si) heterostructures have been studied extensively inthe past years for applications such as photodiodes, photodetectors and solarcells, with a growing focus on efficiency and performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 380, 'to', 2],[164.0, 930, 'nm', 2],[177.0, 98, '%', 3],[185.0, 850, 'nm', 3],[198.0, 635, 'mA', 3]

S
###High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions|Sarah Riazimehr,Satender Kataria,Jose-Maria González-Medina,Mehrdad Shaygan,Stephan Suckow,Francisco G. Ruiz,Olof Engström,Andres Godoy,Max Christian Lemme###
(229021, 229021)
 Here, a specificcontact pattern scheme with interdigitated Schottky andgraphene/insulator/silicon (G<missing VAR>IS) structures is explored to experimentallydemonstrate highly sensitive G<missing VAR>/Si photodiodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 380, 'to', 1],[72.0, 930, 'nm', 1],[85.0, 98, '%', 2],[93.0, 850, 'nm', 2],[106.0, 635, 'mA', 2]

Si
###High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions|Sarah Riazimehr,Satender Kataria,Jose-Maria González-Medina,Mehrdad Shaygan,Stephan Suckow,Francisco G. Ruiz,Olof Engström,Andres Godoy,Max Christian Lemme###
(229043, 229043)
 Here, a specificcontact pattern scheme with interdigitated Schottky andgraphene/insulator/silicon (G<missing VAR>IS) structures is explored to experimentallydemonstrate highly sensitive G<missing VAR>/Si photodiodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 380, 'to', 1],[50.0, 930, 'nm', 1],[63.0, 98, '%', 2],[71.0, 850, 'nm', 2],[84.0, 635, 'mA', 2]

W
###High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions|Sarah Riazimehr,Satender Kataria,Jose-Maria González-Medina,Mehrdad Shaygan,Stephan Suckow,Francisco G. Ruiz,Olof Engström,Andres Godoy,Max Christian Lemme###
(229129, 229129)
 A maximum EQE of 98% is observed at 850 nm, where theresponsivity peaks to 635 mA/W, surpassing conventional Si p-n photodiodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 380, 'to', 1],[36.0, 930, 'nm', 1],[23.0, 98, '%', 0],[15.0, 850, 'nm', 0],[2.0, 635, 'mA', 0]

Si
###High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions|Sarah Riazimehr,Satender Kataria,Jose-Maria González-Medina,Mehrdad Shaygan,Stephan Suckow,Francisco G. Ruiz,Olof Engström,Andres Godoy,Max Christian Lemme###
(229136, 229136)
 A maximum EQE of 98% is observed at 850 nm, where theresponsivity peaks to 635 mA/W, surpassing conventional Si p-n photodiodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 380, 'to', 1],[43.0, 930, 'nm', 1],[30.0, 98, '%', 0],[22.0, 850, 'nm', 0],[9.0, 635, 'mA', 0]

Si
###High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions|Sarah Riazimehr,Satender Kataria,Jose-Maria González-Medina,Mehrdad Shaygan,Stephan Suckow,Francisco G. Ruiz,Olof Engström,Andres Godoy,Max Christian Lemme###
(229175, 229175)
This efficiency is attributed to the highly effective collection of chargecarriers photogenerated in Si under the G<missing VAR>IS parts of the diodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 380, 'to', 2],[82.0, 930, 'nm', 2],[69.0, 98, '%', 1],[61.0, 850, 'nm', 1],[48.0, 635, 'mA', 1]

IS
###High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions|Sarah Riazimehr,Satender Kataria,Jose-Maria González-Medina,Mehrdad Shaygan,Stephan Suckow,Francisco G. Ruiz,Olof Engström,Andres Godoy,Max Christian Lemme###
(229182, 229183)
This efficiency is attributed to the highly effective collection of chargecarriers photogenerated in Si under the G<missing VAR>IS parts of the diodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 380, 'to', 2],[89.0, 930, 'nm', 2],[76.0, 98, '%', 1],[68.0, 850, 'nm', 1],[55.0, 635, 'mA', 1]

Si
###High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions|Sarah Riazimehr,Satender Kataria,Jose-Maria González-Medina,Mehrdad Shaygan,Stephan Suckow,Francisco G. Ruiz,Olof Engström,Andres Godoy,Max Christian Lemme###
(229246, 229246)
 Based onthese results, a definition for the true active area in G<missing VAR>/Si photodiodes isproposed, which may serve towards standardization of G<missing VAR>/Si based optoelectronicdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 380, 'to', 4],[153.0, 930, 'nm', 4],[140.0, 98, '%', 3],[132.0, 850, 'nm', 3],[119.0, 635, 'mA', 3]

Si
###High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions|Sarah Riazimehr,Satender Kataria,Jose-Maria González-Medina,Mehrdad Shaygan,Stephan Suckow,Francisco G. Ruiz,Olof Engström,Andres Godoy,Max Christian Lemme###
(229270, 229270)
 Based onthese results, a definition for the true active area in G<missing VAR>/Si photodiodes isproposed, which may serve towards standardization of G<missing VAR>/Si based optoelectronicdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 380, 'to', 4],[177.0, 930, 'nm', 4],[164.0, 98, '%', 3],[156.0, 850, 'nm', 3],[143.0, 635, 'mA', 3]

P3H
###Transport and Spectroscopic Studies of the Effects of Fullerene Structure on the Efficiency and Lifetime of Polythiophene-based Solar Cells|Emilee L. Sena,Justin H. Peel,Devin Wesenberg,Shreya Nathan,Marianne Wallis,Maxwell J. Giammona,Thorsteinn Adalsteinsson,Brian J. McNelis,Richard P. Barber Jr###
(229391, 229393)
 Time-dependent measurements of both power conversion efficiency andultraviolet-visible absorption spectroscopy have been observed for solar cellblends containing the polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) with twodifferent functionalized C60 electron acceptor molecules commerciallyavailable [6,6]-phenyl C61 butyric acid methyl ester (PCBM) or [6,6]-phenyl C61butyric acid octadecyl ester (PCBOD) produced in this laboratory.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, -2, ',', 0],[28.0, 6, ',', 0],[56.0, 6, ',', 0]

C60
###Transport and Spectroscopic Studies of the Effects of Fullerene Structure on the Efficiency and Lifetime of Polythiophene-based Solar Cells|Emilee L. Sena,Justin H. Peel,Devin Wesenberg,Shreya Nathan,Marianne Wallis,Maxwell J. Giammona,Thorsteinn Adalsteinsson,Brian J. McNelis,Richard P. Barber Jr###
(229406, 229407)
 Time-dependent measurements of both power conversion efficiency andultraviolet-visible absorption spectroscopy have been observed for solar cellblends containing the polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) with twodifferent functionalized C60 electron acceptor molecules commerciallyavailable [6,6]-phenyl C61 butyric acid methyl ester (PCBM) or [6,6]-phenyl C61butyric acid octadecyl ester (PCBOD) produced in this laboratory.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, -2, ',', 0],[14.0, 6, ',', 0],[42.0, 6, ',', 0]

C61
###Transport and Spectroscopic Studies of the Effects of Fullerene Structure on the Efficiency and Lifetime of Polythiophene-based Solar Cells|Emilee L. Sena,Justin H. Peel,Devin Wesenberg,Shreya Nathan,Marianne Wallis,Maxwell J. Giammona,Thorsteinn Adalsteinsson,Brian J. McNelis,Richard P. Barber Jr###
(229428, 229429)
 Time-dependent measurements of both power conversion efficiency andultraviolet-visible absorption spectroscopy have been observed for solar cellblends containing the polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) with twodifferent functionalized C60 electron acceptor molecules commerciallyavailable [6,6]-phenyl C61 butyric acid methyl ester (PCBM) or [6,6]-phenyl C61butyric acid octadecyl ester (PCBOD) produced in this laboratory.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, -2, ',', 0],[7.0, 6, ',', 0],[20.0, 6, ',', 0]

PCB
###Transport and Spectroscopic Studies of the Effects of Fullerene Structure on the Efficiency and Lifetime of Polythiophene-based Solar Cells|Emilee L. Sena,Justin H. Peel,Devin Wesenberg,Shreya Nathan,Marianne Wallis,Maxwell J. Giammona,Thorsteinn Adalsteinsson,Brian J. McNelis,Richard P. Barber Jr###
(229440, 229442)
 Time-dependent measurements of both power conversion efficiency andultraviolet-visible absorption spectroscopy have been observed for solar cellblends containing the polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) with twodifferent functionalized C60 electron acceptor molecules commerciallyavailable [6,6]-phenyl C61 butyric acid methyl ester (PCBM) or [6,6]-phenyl C61butyric acid octadecyl ester (PCBOD) produced in this laboratory.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, -2, ',', 0],[19.0, 6, ',', 0],[7.0, 6, ',', 0]

C61
###Transport and Spectroscopic Studies of the Effects of Fullerene Structure on the Efficiency and Lifetime of Polythiophene-based Solar Cells|Emilee L. Sena,Justin H. Peel,Devin Wesenberg,Shreya Nathan,Marianne Wallis,Maxwell J. Giammona,Thorsteinn Adalsteinsson,Brian J. McNelis,Richard P. Barber Jr###
(229456, 229457)
 Time-dependent measurements of both power conversion efficiency andultraviolet-visible absorption spectroscopy have been observed for solar cellblends containing the polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) with twodifferent functionalized C60 electron acceptor molecules commerciallyavailable [6,6]-phenyl C61 butyric acid methyl ester (PCBM) or [6,6]-phenyl C61butyric acid octadecyl ester (PCBOD) produced in this laboratory.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, -2, ',', 0],[35.0, 6, ',', 0],[7.0, 6, ',', 0]

PCBO
###Transport and Spectroscopic Studies of the Effects of Fullerene Structure on the Efficiency and Lifetime of Polythiophene-based Solar Cells|Emilee L. Sena,Justin H. Peel,Devin Wesenberg,Shreya Nathan,Marianne Wallis,Maxwell J. Giammona,Thorsteinn Adalsteinsson,Brian J. McNelis,Richard P. Barber Jr###
(229469, 229472)
 Time-dependent measurements of both power conversion efficiency andultraviolet-visible absorption spectroscopy have been observed for solar cellblends containing the polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) with twodifferent functionalized C60 electron acceptor molecules commerciallyavailable [6,6]-phenyl C61 butyric acid methyl ester (PCBM) or [6,6]-phenyl C61butyric acid octadecyl ester (PCBOD) produced in this laboratory.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, -2, ',', 0],[48.0, 6, ',', 0],[20.0, 6, ',', 0]

In
###Transport and Spectroscopic Studies of the Effects of Fullerene Structure on the Efficiency and Lifetime of Polythiophene-based Solar Cells|Emilee L. Sena,Justin H. Peel,Devin Wesenberg,Shreya Nathan,Marianne Wallis,Maxwell J. Giammona,Thorsteinn Adalsteinsson,Brian J. McNelis,Richard P. Barber Jr###
(229562, 229562)
 In comparison to the PCBM<missing VAR> samples, the stability of thePCBOD<missing VAR> blends was significantly enhanced, while both absorption and powerconversion efficiency were decreased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, -2, ',', 3],[141.0, 6, ',', 3],[113.0, 6, ',', 3]

PCB
###Transport and Spectroscopic Studies of the Effects of Fullerene Structure on the Efficiency and Lifetime of Polythiophene-based Solar Cells|Emilee L. Sena,Justin H. Peel,Devin Wesenberg,Shreya Nathan,Marianne Wallis,Maxwell J. Giammona,Thorsteinn Adalsteinsson,Brian J. McNelis,Richard P. Barber Jr###
(229570, 229572)
 In comparison to the PCBM<missing VAR> samples, the stability of thePCBOD<missing VAR> blends was significantly enhanced, while both absorption and powerconversion efficiency were decreased.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, -2, ',', 3],[149.0, 6, ',', 3],[121.0, 6, ',', 3]

PCBO
###Transport and Spectroscopic Studies of the Effects of Fullerene Structure on the Efficiency and Lifetime of Polythiophene-based Solar Cells|Emilee L. Sena,Justin H. Peel,Devin Wesenberg,Shreya Nathan,Marianne Wallis,Maxwell J. Giammona,Thorsteinn Adalsteinsson,Brian J. McNelis,Richard P. Barber Jr###
(229587, 229590)
 In comparison to the PCBM<missing VAR> samples, the stability of thePCBOD<missing VAR> blends was significantly enhanced, while both absorption and powerconversion efficiency were decreased.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, -2, ',', 3],[166.0, 6, ',', 3],[138.0, 6, ',', 3]

C
###Multijunction solar cells efficiency simulation|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(229723, 229723)
 The radiative recombination, Shokley-Read recombination, frontal-surface andrear-surface recombination and the recombination at the heterojunctionboundaries and the recombination in the space charge region are considered inthe calculation of the multijunction solar cell (M<missing VAR>SC) efficiency.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Multijunction solar cells efficiency simulation|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(229789, 229790)
 A coolingof M<missing VAR>SC with the increase of the number of cells n<missing VAR> and the improvement in theheat dissipation is regarded.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Multijunction solar cells efficiency simulation|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(229894, 229895)
 A substantial increase in the M<missing VAR>SC efficiency can beachieved by improving the heat extraction using radiators and increasingemissivity.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3-x
###Inverted structure perovskite solar cells: A theoretical study|Anurag Sahu,Ambesh Dixit###
(230018, 230028)
 We analysed perovskite CH3NH3PbI3-xClx inverted planner structure solar cellwith nickel oxide (NiO) and spiro-MeOTAD as hole conductors.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

(NiO)
###Inverted structure perovskite solar cells: A theoretical study|Anurag Sahu,Ambesh Dixit###
(230048, 230051)
 We analysed perovskite CH3NH3PbI3-xClx inverted planner structure solar cellwith nickel oxide (NiO) and spiro-MeOTAD as hole conductors.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Inverted structure perovskite solar cells: A theoretical study|Anurag Sahu,Ambesh Dixit###
(230058, 230058)
 We analysed perovskite CH3NH3PbI3-xClx inverted planner structure solar cellwith nickel oxide (NiO) and spiro-MeOTAD as hole conductors.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Inverted structure perovskite solar cells: A theoretical study|Anurag Sahu,Ambesh Dixit###
(230098, 230099)
 The thickness is optimized for NiO andspiro-MeOTAD hole conducting materials and the devices do not exhibit anysignificant variation for both hole transport materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Inverted structure perovskite solar cells: A theoretical study|Anurag Sahu,Ambesh Dixit###
(230107, 230107)
 The thickness is optimized for NiO andspiro-MeOTAD hole conducting materials and the devices do not exhibit anysignificant variation for both hole transport materials.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Inverted structure perovskite solar cells: A theoretical study|Anurag Sahu,Ambesh Dixit###
(230167, 230168)
 The back metal contactwork function is varied for NiO hole conductor and observed that Ni and Cometals may be suitable back contacts for efficient carrier dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Inverted structure perovskite solar cells: A theoretical study|Anurag Sahu,Ambesh Dixit###
(230180, 230180)
 The back metal contactwork function is varied for NiO hole conductor and observed that Ni and Cometals may be suitable back contacts for efficient carrier dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Inverted structure perovskite solar cells: A theoretical study|Anurag Sahu,Ambesh Dixit###
(230184, 230184)
 The back metal contactwork function is varied for NiO hole conductor and observed that Ni and Cometals may be suitable back contacts for efficient carrier dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Inverted structure perovskite solar cells: A theoretical study|Anurag Sahu,Ambesh Dixit###
(230260, 230261)
 The electron affinity and band gap of transparent conducting oxideand NiO layers are varied to understand their impact on conduction and valenceband offsets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2|Jun Suk Kim,Minh Dao Tran,Sung-Tae Kim,Daehan Yoo,Sang-Hyun Oh,Ji-Hee Kim,Young Hee Lee###
(230719, 230721)
Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2|Jun Suk Kim,Minh Dao Tran,Sung-Tae Kim,Daehan Yoo,Sang-Hyun Oh,Ji-Hee Kim,Young Hee Lee###
(230765, 230765)
 Although van der Waals layered transition metal dichalcogenides fromtransient absorption spectroscopy have successfully demonstrated an idealcarrier multiplication (CM) performance with an onset of nearly2Eg,interpretation of the CM<missing VAR> effect from the optical approach remainsunresolved owing to the complexity of many-body electron-hole pairs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2|Jun Suk Kim,Minh Dao Tran,Sung-Tae Kim,Daehan Yoo,Sang-Hyun Oh,Ji-Hee Kim,Young Hee Lee###
(230791, 230791)
 Although van der Waals layered transition metal dichalcogenides fromtransient absorption spectroscopy have successfully demonstrated an idealcarrier multiplication (CM) performance with an onset of nearly2Eg,interpretation of the CM<missing VAR> effect from the optical approach remainsunresolved owing to the complexity of many-body electron-hole pairs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2|Jun Suk Kim,Minh Dao Tran,Sung-Tae Kim,Daehan Yoo,Sang-Hyun Oh,Ji-Hee Kim,Young Hee Lee###
(230837, 230837)
 Wedemonstrate the CM<missing VAR> effect through simple photocurrent measurements byfabricating the dual-gate P-N junction of a MoTe2 film on a transparentsubstrate.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2|Jun Suk Kim,Minh Dao Tran,Sung-Tae Kim,Daehan Yoo,Sang-Hyun Oh,Ji-Hee Kim,Young Hee Lee###
(230861, 230861)
 Wedemonstrate the CM<missing VAR> effect through simple photocurrent measurements byfabricating the dual-gate P-N junction of a MoTe2 film on a transparentsubstrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2|Jun Suk Kim,Minh Dao Tran,Sung-Tae Kim,Daehan Yoo,Sang-Hyun Oh,Ji-Hee Kim,Young Hee Lee###
(230863, 230863)
 Wedemonstrate the CM<missing VAR> effect through simple photocurrent measurements byfabricating the dual-gate P-N junction of a MoTe2 film on a transparentsubstrate.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2|Jun Suk Kim,Minh Dao Tran,Sung-Tae Kim,Daehan Yoo,Sang-Hyun Oh,Ji-Hee Kim,Young Hee Lee###
(230871, 230873)
 Wedemonstrate the CM<missing VAR> effect through simple photocurrent measurements byfabricating the dual-gate P-N junction of a MoTe2 film on a transparentsubstrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Carrier Multiplication via Photocurrent Measurements in Dual-Gated MoTe_2|Jun Suk Kim,Minh Dao Tran,Sung-Tae Kim,Daehan Yoo,Sang-Hyun Oh,Ji-Hee Kim,Young Hee Lee###
(230982, 230982)
 The boostedquantum efficiency confirms the multiple electron-hole pair generation of >2Eg,consistent with CM<missing VAR> results from an optical approach, pushing the solar cellefficiency beyond the Shockley-Queisser limit.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231057, 231057)
 Transparent photovoltaic (T<missing VAR>PV) devices have the great potential to apply assmart windows in the construction and agriculture field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 80, '%', 1],[75.0, 10, '%', 1],[117.0, 73, '%', 2],[175.0, 80, '%', 4],[293.0, 82, '%', 7],[308.0, 0.3, '%', 7]

P
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231102, 231102)
 The efficiencies ofT<missing VAR>PVs are growing up quickly in recent years and the champion efficiency evenexceeds 10%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 80, '%', 2],[30.0, 10, '%', 0],[72.0, 73, '%', 1],[130.0, 80, '%', 3],[248.0, 82, '%', 6],[263.0, 0.3, '%', 6]

V
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231168, 231168)
 However, the transparency is still hard to further improved afterthe average visible transmission (AVT) achieved 73%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 80, '%', 3],[36.0, 10, '%', 1],[6.0, 73, '%', 0],[64.0, 80, '%', 2],[182.0, 82, '%', 5],[197.0, 0.3, '%', 5]

PV
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231187, 231188)
 Each component of the T<missing VAR>PVdevices will influent the transparency of the T<missing VAR>PV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 80, '%', 4],[55.0, 10, '%', 2],[13.0, 73, '%', 1],[44.0, 80, '%', 1],[162.0, 82, '%', 4],[177.0, 0.3, '%', 4]

PV
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231206, 231207)
 Each component of the T<missing VAR>PVdevices will influent the transparency of the T<missing VAR>PV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 80, '%', 4],[74.0, 10, '%', 2],[32.0, 73, '%', 1],[25.0, 80, '%', 1],[143.0, 82, '%', 4],[158.0, 0.3, '%', 4]

PV
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231218, 231219)
 To date, the T<missing VAR>PV with theAVT<missing VAR> over 80% has not been reported yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 80, '%', 5],[86.0, 10, '%', 3],[44.0, 73, '%', 2],[13.0, 80, '%', 0],[131.0, 82, '%', 3],[146.0, 0.3, '%', 3]

V
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231227, 231227)
 To date, the T<missing VAR>PV with theAVT<missing VAR> over 80% has not been reported yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 80, '%', 5],[95.0, 10, '%', 3],[53.0, 73, '%', 2],[5.0, 80, '%', 0],[123.0, 82, '%', 3],[138.0, 0.3, '%', 3]

In
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231246, 231246)
 In this work, we describe thefullerene-based highly transparent solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 80, '%', 6],[114.0, 10, '%', 4],[72.0, 73, '%', 3],[14.0, 80, '%', 1],[104.0, 82, '%', 2],[119.0, 0.3, '%', 2]

CuSCN/C60
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231275, 231281)
 The CuSCN/C60 heterojunction isused as the effective light absorber.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[229.0, 80, '%', 7],[143.0, 10, '%', 5],[101.0, 73, '%', 4],[43.0, 80, '%', 2],[69.0, 82, '%', 1],[84.0, 0.3, '%', 1]

PV
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231334, 231335)
 By finely optimizing the thickness offullerene films and introducing the highly transparent electrodes, the T<missing VAR>PVexhibits the AVT<missing VAR> up to 82% while the device efficiency is above 0.3%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 80, '%', 8],[202.0, 10, '%', 6],[160.0, 73, '%', 5],[102.0, 80, '%', 3],[15.0, 82, '%', 0],[30.0, 0.3, '%', 0]

V
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231343, 231343)
 By finely optimizing the thickness offullerene films and introducing the highly transparent electrodes, the T<missing VAR>PVexhibits the AVT<missing VAR> up to 82% while the device efficiency is above 0.3%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 80, '%', 8],[211.0, 10, '%', 6],[169.0, 73, '%', 5],[111.0, 80, '%', 3],[7.0, 82, '%', 0],[22.0, 0.3, '%', 0]

PV
###Fullerene-Based Transparent Solar Cells with Average Visible Transmission Exceeding 80%|Ruiqian Meng,Qianqing Jiang,Dianyi Liu###
(231391, 231392)
 Thisstudy affords a new avenue to construct highly transparent T<missing VAR>PV device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 80, '%', 9],[259.0, 10, '%', 7],[217.0, 73, '%', 6],[159.0, 80, '%', 4],[41.0, 82, '%', 1],[26.0, 0.3, '%', 1]

CsPbI3
###Efficient Extraction of Hot Carriers in Perovskite Quantum Dot through Building State Coupled Complex|Yusheng Li,Junke Jiang,Dandan Wang,Dong Liu,Shota Yajima,Hua Li,Akihito Fuchimoto,Hongshi Li,Guozheng Shi,Shuzi Hayase,Shuxia Tao,Jiangjian Shi,Qingbo Meng,Chao Ding,Qing Shen###
(231541, 231544)
 Herein,we build series of CsPbI3 quantum dot and fullerene derivative systems toexplore the decisive factors of this process and have for the first timerealized efficient hot carrier extraction in these systems (maximum extractionefficiency  84%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 84, '%', 0],[106.0, 0.22, 'eV', 1]

CsPbI3
###Efficient Extraction of Hot Carriers in Perovskite Quantum Dot through Building State Coupled Complex|Yusheng Li,Junke Jiang,Dandan Wang,Dong Liu,Shota Yajima,Hua Li,Akihito Fuchimoto,Hongshi Li,Guozheng Shi,Shuzi Hayase,Shuxia Tao,Jiangjian Shi,Qingbo Meng,Chao Ding,Qing Shen###
(231654, 231657)
 We find building the systems as state-coupled complexescreates new carrier transport channels at about 0.22 eV above CsPbI3 quantumdot bandgap, which facilitates highly efficient HC extraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 84, '%', 1],[4.0, 0.22, 'eV', 0]

HC
###Efficient Extraction of Hot Carriers in Perovskite Quantum Dot through Building State Coupled Complex|Yusheng Li,Junke Jiang,Dandan Wang,Dong Liu,Shota Yajima,Hua Li,Akihito Fuchimoto,Hongshi Li,Guozheng Shi,Shuzi Hayase,Shuxia Tao,Jiangjian Shi,Qingbo Meng,Chao Ding,Qing Shen###
(231675, 231676)
 We find building the systems as state-coupled complexescreates new carrier transport channels at about 0.22 eV above CsPbI3 quantumdot bandgap, which facilitates highly efficient HC extraction.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 84, '%', 1],[25.0, 0.22, 'eV', 0]

PV
###Phononic engineering with nanostructures for hot carrier solar cells|Jean Francois Guillemoles,Gavin Conibeer,Martin Green###
(231982, 231983)
The physics of carrier cooling is explored and experimental data of otherauthors are discussed with a view to assessing the potential of state-of-theart nanostructured materials for PV conversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 54, '%', 1],[52.0, 2500, 'suns', 1],[60.0, 54, '%', 1]

In
###Optical orientation in bipolar spintronic devices|Jaroslav Fabian,Igor Zutic###
(232195, 232195)
 Innominally nonmagnetic junctions optical orientation can provide a source forspin capacitance--the bias-dependent nonequilibrium spin accumulation--or forspin-polarized current in bipolar spin-polarized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Optical orientation in bipolar spintronic devices|Jaroslav Fabian,Igor Zutic###
(232261, 232261)
 In magneticjunctions, the nonequilibrium spin polarization generated by spin orientationin a proximity of an equilibrium magnetization gives rise to the spin-voltaiceffect (a realization of the Silsbee-Johnson coupling), enabling efficientcontrol of electrical properties such as the I-V characteristics of thejunctions by magnetic and optical fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Optical orientation in bipolar spintronic devices|Jaroslav Fabian,Igor Zutic###
(232351, 232351)
 In magneticjunctions, the nonequilibrium spin polarization generated by spin orientationin a proximity of an equilibrium magnetization gives rise to the spin-voltaiceffect (a realization of the Silsbee-Johnson coupling), enabling efficientcontrol of electrical properties such as the I-V characteristics of thejunctions by magnetic and optical fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Optical orientation in bipolar spintronic devices|Jaroslav Fabian,Igor Zutic###
(232353, 232353)
 In magneticjunctions, the nonequilibrium spin polarization generated by spin orientationin a proximity of an equilibrium magnetization gives rise to the spin-voltaiceffect (a realization of the Silsbee-Johnson coupling), enabling efficientcontrol of electrical properties such as the I-V characteristics of thejunctions by magnetic and optical fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Influence of the pattern shape on the photonic efficiency of front-side periodically patterned ultrathin crystalline silicon solar cells|Aline Herman,Christos Trompoukis,Valerie Depauw,Ounsi El Daif,Olivier Deparis###
(232495, 232495)
 Patterning the front side of an ultra-thin crystalline silicon (c<missing VAR> Si) solarcell helps keeping the energy conversion efficiency high by compensating forthe light absorption losses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Influence of the pattern shape on the photonic efficiency of front-side periodically patterned ultrathin crystalline silicon solar cells|Aline Herman,Christos Trompoukis,Valerie Depauw,Ounsi El Daif,Olivier Deparis###
(232687, 232687)
 Weshow that the optimal mathematical shape and parameters of the pattern dependon the c<missing VAR> Si thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Influence of the pattern shape on the photonic efficiency of front-side periodically patterned ultrathin crystalline silicon solar cells|Aline Herman,Christos Trompoukis,Valerie Depauw,Ounsi El Daif,Olivier Deparis###
(232786, 232786)
 To compare our modelwith a real slab, we fabricated a nanopatterned c<missing VAR> Si slab via Nano ImprintLithography.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Direct optical measurement of light coupling into planar waveguide by plasmonic nanoparticles|Antti M. Pennanen,J. Jussi Toppari###
(232897, 232897)
 In numerous studies this coupling hasbeen investigated through measurement of e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233171, 233173)
Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 3, '%', 9],[342.0, 40, '%', 10],[352.0, 17.73, 'mA', 10],[360.0, 33, '%', 10],[366.0, 5.72, '%', 10],[371.0, 7.59, '%', 10]

Cs
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233216, 233216)
 The conversion efficiency of dye-sensitized solar cells (D<missing VAR>SSCs) is optimizedby modifying the optical design and improving absorbance within the cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 3, '%', 8],[299.0, 40, '%', 9],[309.0, 17.73, 'mA', 9],[317.0, 33, '%', 9],[323.0, 5.72, '%', 9],[328.0, 7.59, '%', 9]

TiO2
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233268, 233270)
 Theseobjectives are obtained by creating different sized cavities in TiO2photoanode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 3, '%', 7],[245.0, 40, '%', 8],[255.0, 17.73, 'mA', 8],[263.0, 33, '%', 8],[269.0, 5.72, '%', 8],[274.0, 7.59, '%', 8]

TiO2
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233315, 233317)
 A paste of TiO2 is mixed with variousamounts of carbon nanospheres.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 3, '%', 5],[198.0, 40, '%', 6],[208.0, 17.73, 'mA', 6],[216.0, 33, '%', 6],[222.0, 5.72, '%', 6],[227.0, 7.59, '%', 6]

TiO2
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233339, 233341)
 During TiO2 photoanode sintering processes at500C temperature, the carbon nanospheres are removed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 3, '%', 4],[174.0, 40, '%', 5],[184.0, 17.73, 'mA', 5],[192.0, 33, '%', 5],[198.0, 5.72, '%', 5],[203.0, 7.59, '%', 5]

C
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233353, 233353)
 During TiO2 photoanode sintering processes at500C temperature, the carbon nanospheres are removed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 3, '%', 4],[162.0, 40, '%', 5],[172.0, 17.73, 'mA', 5],[180.0, 33, '%', 5],[186.0, 5.72, '%', 5],[191.0, 7.59, '%', 5]

SSCs
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233389, 233391)
 This leads to randomcreation of cavities in the D<missing VAR>SSCs photoanode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3, '%', 3],[124.0, 40, '%', 4],[134.0, 17.73, 'mA', 4],[142.0, 33, '%', 4],[148.0, 5.72, '%', 4],[153.0, 7.59, '%', 4]

N719
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233423, 233424)
 These cavities enhance lightscattering and porosity which improve light absorbance by dye N719 and providea larger surface area for dye loading.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3, '%', 2],[91.0, 40, '%', 3],[101.0, 17.73, 'mA', 3],[109.0, 33, '%', 3],[115.0, 5.72, '%', 3],[120.0, 7.59, '%', 3]

SSCs
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233458, 233460)
 These consequences enhance performanceof D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, '%', 1],[55.0, 40, '%', 2],[65.0, 17.73, 'mA', 2],[73.0, 33, '%', 2],[79.0, 5.72, '%', 2],[84.0, 7.59, '%', 2]

TiO2
###Performance enhancement of TiO2-based dye-sensitized solar cells by carbon nanospheres in photoanode|Elham Bayatloo,Esmaiel Saievar-Iranizad###
(233481, 233483)
 carbon nanospheres in the TiO2 pastes, we were ableto increase the short circuit current density and efficiency by 40% (from 12.59to 17.73 mA/cm2) and 33% (from 5.72% to 7.59%), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, '%', 1],[32.0, 40, '%', 0],[42.0, 17.73, 'mA', 0],[50.0, 33, '%', 0],[56.0, 5.72, '%', 0],[61.0, 7.59, '%', 0]

(SCI)
###Optoelectronic excitations and photovoltaic effect in strongly correlated materials|John E. Coulter,Efstratios Manousakis,Adam Gali###
(234045, 234049)
 Here we showby ab initio methods that the presence of strong Coulomb interactions instrongly correlated insulators (SCI) causes the highly photo-excitedelectron-hole pair to decay fast into multiple electron-hole pairs via impactionization (II).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(II)
###Optoelectronic excitations and photovoltaic effect in strongly correlated materials|John E. Coulter,Efstratios Manousakis,Adam Gali###
(234091, 234094)
 Here we showby ab initio methods that the presence of strong Coulomb interactions instrongly correlated insulators (SCI) causes the highly photo-excitedelectron-hole pair to decay fast into multiple electron-hole pairs via impactionization (II).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Optoelectronic excitations and photovoltaic effect in strongly correlated materials|John E. Coulter,Efstratios Manousakis,Adam Gali###
(234105, 234106)
 We show that the II rate in the insulating M<missing VAR>1 phase ofvanadium dioxide (chosen for this study as it is considered a prototypical SCI)is two orders of magnitude higher than in Si and much higher than the rate ofhot electron/hole decay due to phonons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Optoelectronic excitations and photovoltaic effect in strongly correlated materials|John E. Coulter,Efstratios Manousakis,Adam Gali###
(234151, 234151)
 We show that the II rate in the insulating M<missing VAR>1 phase ofvanadium dioxide (chosen for this study as it is considered a prototypical SCI)is two orders of magnitude higher than in Si and much higher than the rate ofhot electron/hole decay due to phonons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Optoelectronic excitations and photovoltaic effect in strongly correlated materials|John E. Coulter,Efstratios Manousakis,Adam Gali###
(234171, 234171)
 We show that the II rate in the insulating M<missing VAR>1 phase ofvanadium dioxide (chosen for this study as it is considered a prototypical SCI)is two orders of magnitude higher than in Si and much higher than the rate ofhot electron/hole decay due to phonons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Revealing the role of organic cations in hybrid halide perovskites CH3NH3PbI3|Carlo Motta,Fedwa El Mellouhi,Sabre Kais,Nouar Tabet,Fahhad Alharbi,Stefano Sanvito###
(234288, 234296)
Revealing the role of organic cations in hybrid halide perovskites CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 18, '%', 1]

CH3NH3PbI3
###Revealing the role of organic cations in hybrid halide perovskites CH3NH3PbI3|Carlo Motta,Fedwa El Mellouhi,Sabre Kais,Nouar Tabet,Fahhad Alharbi,Stefano Sanvito###
(234307, 234315)
 The hybrid halide perovskite CH3NH3PbI3 has enabled solarcells to reach an efficiency of about 18%, demonstrating a pace forimprovements with no precedents in the solar energy arena.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 18, '%', 0]

CH3NH3
###Revealing the role of organic cations in hybrid halide perovskites CH3NH3PbI3|Carlo Motta,Fedwa El Mellouhi,Sabre Kais,Nouar Tabet,Fahhad Alharbi,Stefano Sanvito###
(234503, 234508)
 For instance, if CH3NH3 orients along a(011)-like direction, the PbI6 octahedral cage will distort and the bandgap will become indirect.
Featurization terminated normally.
0.75,0,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 18, '%', 3]

PbI6
###Revealing the role of organic cations in hybrid halide perovskites CH3NH3PbI3|Carlo Motta,Fedwa El Mellouhi,Sabre Kais,Nouar Tabet,Fahhad Alharbi,Stefano Sanvito###
(234528, 234530)
 For instance, if CH3NH3 orients along a(011)-like direction, the PbI6 octahedral cage will distort and the bandgap will become indirect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 18, '%', 3]

CH3NH3PbI3
###Revealing the role of organic cations in hybrid halide perovskites CH3NH3PbI3|Carlo Motta,Fedwa El Mellouhi,Sabre Kais,Nouar Tabet,Fahhad Alharbi,Stefano Sanvito###
(234623, 234631)
 Our results suggest that molecular rotations, withthe consequent dynamical change of the band structure, might be at the originof the slow carrier recombination and the superior conversion efficiency ofCH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 18, '%', 4]

II
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234648, 234649)
Strain-balanced type-II superlattices for efficient multi-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1, 'eV', 1],[286.0, 0, 'V', 4]

II
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234672, 234673)
 We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAsas a novel material for the 1 eV sub-cells present in highly efficientGaAs/Ge-based multi-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 1, 'eV', 0],[262.0, 0, 'V', 3]

GaAsSb/GaAsN
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234675, 234681)
 We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAsas a novel material for the 1 eV sub-cells present in highly efficientGaAs/Ge-based multi-junction solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 1, 'eV', 0],[254.0, 0, 'V', 3]

S
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234686, 234686)
 We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAsas a novel material for the 1 eV sub-cells present in highly efficientGaAs/Ge-based multi-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1, 'eV', 0],[249.0, 0, 'V', 3]

GaAs
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234696, 234697)
 We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAsas a novel material for the 1 eV sub-cells present in highly efficientGaAs/Ge-based multi-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, 'eV', 0],[238.0, 0, 'V', 3]

GaAs/Ge
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234726, 234729)
 We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAsas a novel material for the 1 eV sub-cells present in highly efficientGaAs/Ge-based multi-junction solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[15.0, 1, 'eV', 0],[206.0, 0, 'V', 3]

Sb
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234765, 234765)
 We demonstrate that, among otherbenefits, the spatial separation of Sb and N allows a better control overcomposition and lattice matching, avoiding the growth problems related to theconcomitant presence of both elements in GaAsSbN layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1, 'eV', 1],[170.0, 0, 'V', 2]

N
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234769, 234769)
 We demonstrate that, among otherbenefits, the spatial separation of Sb and N allows a better control overcomposition and lattice matching, avoiding the growth problems related to theconcomitant presence of both elements in GaAsSbN layers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1, 'eV', 1],[166.0, 0, 'V', 2]

GaAsSbN
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234818, 234821)
 We demonstrate that, among otherbenefits, the spatial separation of Sb and N allows a better control overcomposition and lattice matching, avoiding the growth problems related to theconcomitant presence of both elements in GaAsSbN layers.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1, 'eV', 1],[114.0, 0, 'V', 2]

V
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234884, 234884)
 This approach not onlyreduces clustering and improves crystal quality and interface abruptness, butalso allows for additional control of the effective bandgap in the 1.0-1.15 e<missing VAR>Vspectral region through the SL<missing VAR> period thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1, 'eV', 2],[51.0, 0, 'V', 1]

S
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234895, 234895)
 This approach not onlyreduces clustering and improves crystal quality and interface abruptness, butalso allows for additional control of the effective bandgap in the 1.0-1.15 e<missing VAR>Vspectral region through the SL<missing VAR> period thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 1, 'eV', 2],[40.0, 0, 'V', 1]

S
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234907, 234907)
 The optimized SL<missing VAR> structureexhibits a type-II band alignment and strong electronic coupling at 0 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 1, 'eV', 3],[28.0, 0, 'V', 0]

II
###Strain-balanced type-II superlattices for efficient multi-junction solar cells|A. Gonzalo,A. D. Utrilla,D. F. Reyes,V. Braza,J. M. Llorens,D. Fuertes Marron,B. Alen,T. Ben,D. Gonzalez,A. Guzman,A. Hierro,J. M. Ulloa###
(234919, 234920)
 The optimized SL<missing VAR> structureexhibits a type-II band alignment and strong electronic coupling at 0 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 1, 'eV', 3],[15.0, 0, 'V', 0]

CH3NH3PbI3
###Time resolved photoemission spectroscopy of electronic cooling and localization in CH$_3$NH$_3$PbI$_3$ crystals|Zhesheng Chen,Min-i Lee,Zailan Zhang,Hiba Diab,Damien Garrot,Ferdinand Lédée,Pierre Fertey,Evangelos Papalazarou,Marino Marsi,Carlito Ponseca,Emmanuelle Deleporte,Antonio Tejeda,Luca Perfetti###
(235040, 235048)
Time resolved photoemission spectroscopy of electronic cooling and localization in CH3NH3PbI3 crystals.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Time resolved photoemission spectroscopy of electronic cooling and localization in CH$_3$NH$_3$PbI$_3$ crystals|Zhesheng Chen,Min-i Lee,Zailan Zhang,Hiba Diab,Damien Garrot,Ferdinand Lédée,Pierre Fertey,Evangelos Papalazarou,Marino Marsi,Carlito Ponseca,Emmanuelle Deleporte,Antonio Tejeda,Luca Perfetti###
(235063, 235071)
 We measure the surface of CH3NH3PbI3 single crystals by making useof two photon photoemission spectroscopy.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Time resolved photoemission spectroscopy of electronic cooling and localization in CH$_3$NH$_3$PbI$_3$ crystals|Zhesheng Chen,Min-i Lee,Zailan Zhang,Hiba Diab,Damien Garrot,Ferdinand Lédée,Pierre Fertey,Evangelos Papalazarou,Marino Marsi,Carlito Ponseca,Emmanuelle Deleporte,Antonio Tejeda,Luca Perfetti###
(235238, 235246)
 The picosecondlocalization of excited electrons in degraded CH3NH3PbI3 samples isconsistent with the progressive reduction of photoconversion efficiency inoperating devices.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Modelling of limitations of bulk heterojunction architecture in organic solar cells|Jacek Wojtkiewicz,Marek Pilch###
(235432, 235432)
 In the most popular BHJ<missing VAR> (bulk heterojunction) architecture theactual record of efficiency is about 13 percent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 13, 'percent', 0],[214.0, 2, 'times', 5]

BH
###Modelling of limitations of bulk heterojunction architecture in organic solar cells|Jacek Wojtkiewicz,Marek Pilch###
(235440, 235441)
 In the most popular BHJ<missing VAR> (bulk heterojunction) architecture theactual record of efficiency is about 13 percent.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 13, 'percent', 0],[205.0, 2, 'times', 5]

In
###Modelling of limitations of bulk heterojunction architecture in organic solar cells|Jacek Wojtkiewicz,Marek Pilch###
(235489, 235489)
 In our paper we propose the simple model whichexamines the limitations of efficiency by analysis of geometrical aspects ofthe BHJ<missing VAR> architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 13, 'percent', 2],[157.0, 2, 'times', 3]

BH
###Modelling of limitations of bulk heterojunction architecture in organic solar cells|Jacek Wojtkiewicz,Marek Pilch###
(235533, 235534)
 In our paper we propose the simple model whichexamines the limitations of efficiency by analysis of geometrical aspects ofthe BHJ<missing VAR> architecture.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 13, 'percent', 2],[112.0, 2, 'times', 3]

In
###Modelling of limitations of bulk heterojunction architecture in organic solar cells|Jacek Wojtkiewicz,Marek Pilch###
(235540, 235540)
 In this paper we considered two dimensional model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 13, 'percent', 3],[106.0, 2, 'times', 2]

BH
###Modelling of limitations of bulk heterojunction architecture in organic solar cells|Jacek Wojtkiewicz,Marek Pilch###
(235629, 235630)
 It turns out that in the BHJ<missing VAR> architecture, thiseffective length is about 2 times smaller than in the comb architecture.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 13, 'percent', 5],[16.0, 2, 'times', 0]

S
###Probing near-field light-matter interactions with single-molecule lifetime imaging|Dorian Bouchet,Jules Scholler,Guillaume Blanquer,Yannick De Wilde,Ignacio Izeddin,Valentina Krachmalnicoff###
(235891, 235891)
 The simultaneous measurement of the position and thedecay rate of the molecules provides a direct access to the local density ofstates (LDOS) at the nanoscale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 6, 'nm', 1]

OS
###Probing near-field light-matter interactions with single-molecule lifetime imaging|Dorian Bouchet,Jules Scholler,Guillaume Blanquer,Yannick De Wilde,Ignacio Izeddin,Valentina Krachmalnicoff###
(235926, 235927)
 We experimentally demonstrate the performanceof the technique by studying the LDOS variations induced in the near field of asilver nanowire, and we show via a Cramer-Rao analysis that the proposedexperimental setup enables a single-molecule localisation precision of 6 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 6, 'nm', 0]

AuTiO2
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236021, 236024)
Influence of morphology on the plasmonic enhancement effect of AuTiO2 core-shell nanoparticles in dye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 23, '%', 7]

PCSN
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236052, 236055)
 Plasmonic core-shell nanoparticles (PCSNPs) can function as nanoantennas andimprove the efficiency of dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 23, '%', 6]

Cs
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236090, 236090)
 Plasmonic core-shell nanoparticles (PCSNPs) can function as nanoantennas andimprove the efficiency of dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 23, '%', 6]

PCSN
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236110, 236113)
 To achievemaximum enhancement, the morphology of PCSNPs need to be optimized.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 23, '%', 5]

AuTiO2
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236140, 236143)
 Here weprecisely control the morphology of AuTiO2 PCSNPs and systematically study itsinfluence on the plasmonic enhancement effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 23, '%', 4]

PCSN
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236145, 236148)
 Here weprecisely control the morphology of AuTiO2 PCSNPs and systematically study itsinfluence on the plasmonic enhancement effect.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 23, '%', 4]

TiO2
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236194, 236196)
 Enhancement mechanism was foundto vary with the thickness of TiO2 shell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 23, '%', 3]

PCSN
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236201, 236204)
 PCSNPs with thinner shell enhance thecurrent due to plasmonic effect, whereas particles with thicker shell improvethe voltage due to increasing semiconducting character.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 23, '%', 2]

PCSN
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236290, 236293)
 PCSNPs with 5-nm shell give highest efficiency enhancement of23%.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 23, '%', 0]

AuTiO2
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236339, 236342)
 Our work provides a new synthesis route for well-controlled AuTiO2core-shell nanoparticles and gains insight into the plasmonic enhancement inD<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 23, '%', 1]

SSCs
###Influence of morphology on the plasmonic enhancement effect of Au@TiO2 core-shell nanoparticles in dye-sensitized solar cells|Wei-Liang Liu,Fan-Cheng Lin,Yu-Chen Yang,Chen-Hsien Huang,Shangjr Gwo,Michael H. Huang,Jer-Shing Huang###
(236369, 236371)
 Our work provides a new synthesis route for well-controlled AuTiO2core-shell nanoparticles and gains insight into the plasmonic enhancement inD<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 23, '%', 1]

SnSAg
###Localized Surface Plasmon Resonance in SnS:Ag Nano-composite Films|Priyal Jain,P. Arun###
(236392, 236394)
Localized Surface Plasmon Resonance in SnSAg Nano-composite Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 580, 'nm', 2]

(SnS)
###Localized Surface Plasmon Resonance in SnS:Ag Nano-composite Films|Priyal Jain,P. Arun###
(236415, 236418)
 Nano-composite films of Tin Sulfide (SnS) and silver (Ag) fabricated bythermal evaporation showed two prominent peaks in the visible region of theirextinction spectra.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 580, 'nm', 1]

(Ag)
###Localized Surface Plasmon Resonance in SnS:Ag Nano-composite Films|Priyal Jain,P. Arun###
(236424, 236426)
 Nano-composite films of Tin Sulfide (SnS) and silver (Ag) fabricated bythermal evaporation showed two prominent peaks in the visible region of theirextinction spectra.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 580, 'nm', 1]

SnS
###Localized Surface Plasmon Resonance in SnS:Ag Nano-composite Films|Priyal Jain,P. Arun###
(236556, 236557)
 Using grain size of silver and SnS obtained fromstructural and morphological characterizations of the samples and dielectricconstants as per actuals, we have compared the experimental results with thosefrom theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 580, 'nm', 1]

SnS
###Localized Surface Plasmon Resonance in SnS:Ag Nano-composite Films|Priyal Jain,P. Arun###
(236651, 236652)
 The study shows that silver nano-particles efficiently scatterslight and can be used for developing plasmonic based SnS solar cells withimproved efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 580, 'nm', 2]

C
###Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography|Islam Abdo,Christos Trompoukis,Jan Deckers,Valérie Depauw,Loic Tous,Dries Van Gestel,Rafik Guindi,Ivan Gordon,Ounsi El Daif###
(237078, 237078)
 The integration of two-dimensional (2D) periodic nanopattern defined bynanoimprint lithography and dry etching into aluminum induced crystallization(AIC) based polycrystalline silicon (Poly-Si) thin film solar cells isinvestigated experimentally.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, 'D', 1],[47.0, 6, '%', 1],[93.0, 20.6, 'mA', 1],[99.0, 23.8, 'mA', 1],[128.0, 6.4, '%', 2],[133.0, 6.7, '%', 2]

Si
###Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography|Islam Abdo,Christos Trompoukis,Jan Deckers,Valérie Depauw,Loic Tous,Dries Van Gestel,Rafik Guindi,Ivan Gordon,Ounsi El Daif###
(237090, 237090)
 The integration of two-dimensional (2D) periodic nanopattern defined bynanoimprint lithography and dry etching into aluminum induced crystallization(AIC) based polycrystalline silicon (Poly-Si) thin film solar cells isinvestigated experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'D', 1],[35.0, 6, '%', 1],[81.0, 20.6, 'mA', 1],[87.0, 23.8, 'mA', 1],[116.0, 6.4, '%', 2],[121.0, 6.7, '%', 2]

C
###Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography|Islam Abdo,Christos Trompoukis,Jan Deckers,Valérie Depauw,Loic Tous,Dries Van Gestel,Rafik Guindi,Ivan Gordon,Ounsi El Daif###
(237277, 237277)
 Weshow using the transfer length method (TLM) that the surface topographymodification caused by the nanopattern has increased the sheet resistance ofthe antireflection coating (AR<missing VAR>C) layer as well as the contact resistancebetween the AR<missing VAR>C layer and the emitter front contacts.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 2, 'D', 4],[152.0, 6, '%', 2],[106.0, 20.6, 'mA', 2],[100.0, 23.8, 'mA', 2],[71.0, 6.4, '%', 1],[66.0, 6.7, '%', 1]

C
###Integration of a 2D Periodic Nanopattern Into Thin Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography|Islam Abdo,Christos Trompoukis,Jan Deckers,Valérie Depauw,Loic Tous,Dries Van Gestel,Rafik Guindi,Ivan Gordon,Ounsi El Daif###
(237301, 237301)
 Weshow using the transfer length method (TLM) that the surface topographymodification caused by the nanopattern has increased the sheet resistance ofthe antireflection coating (AR<missing VAR>C) layer as well as the contact resistancebetween the AR<missing VAR>C layer and the emitter front contacts.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 2, 'D', 4],[176.0, 6, '%', 2],[130.0, 20.6, 'mA', 2],[124.0, 23.8, 'mA', 2],[95.0, 6.4, '%', 1],[90.0, 6.7, '%', 1]

CdS
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237392, 237393)
Photocurrent enhancement of spin coated CdS thin films by adding Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237403, 237403)
Photocurrent enhancement of spin coated CdS thin films by adding Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237406, 237406)
 Cu added CdS films were synthesized using spin coating technique at differentspin speeds for different time durations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237410, 237411)
 Cu added CdS films were synthesized using spin coating technique at differentspin speeds for different time durations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237483, 237484)
 Films were subsequently annealed atdifferent temperatures for different time periods in air to crystallize thephase of CdS in thin film form.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UV
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237508, 237509)
 Films were characterized using XRD, UV- visiblespectrometer and solar simulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237546, 237546)
 According to XRD patterns, addition of traceamount of Cu did not change the structure of CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237560, 237561)
 According to XRD patterns, addition of traceamount of Cu did not change the structure of CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237586, 237586)
 However, the optical band gapgradually decreases with percentage of Cu as expected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237593, 237593)
 As a result, thephotocurrent, fill factor and efficiency measured in KI/I2 electrolytegradually increase with the amount of Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KI/I2
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237618, 237622)
 As a result, thephotocurrent, fill factor and efficiency measured in KI/I2 electrolytegradually increase with the amount of Cu.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237639, 237639)
 As a result, thephotocurrent, fill factor and efficiency measured in KI/I2 electrolytegradually increase with the amount of Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237663, 237664)
 Photovoltaic properties could beimproved without altering the structure of CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdS
###Photocurrent enhancement of spin coated CdS thin films by adding Cu|P. Samarasekara,B. M. M. B. Basnayaka,Sunil Dehipawala###
(237671, 237672)
 Efficiency enhanced CdS filmsfind potential applications in solar cell industry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo2O4
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237714, 237718)
Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 15, 'nm', 4],[337.0, 15, 'nm', 5]

In
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237733, 237733)
 In the present study, we report the synthesis and characterization of alow-temperature solution-processable monodispersed nickel cobaltite (NiCo2O4)nanoparticles via a combustion synthesis using tartaric acid as fuel anddemonstrate its performance as hole transport layer (HTL) for Perovskite SolarCells (PVSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 15, 'nm', 3],[322.0, 15, 'nm', 4]

(NiCo2O4)
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237773, 237779)
 In the present study, we report the synthesis and characterization of alow-temperature solution-processable monodispersed nickel cobaltite (NiCo2O4)nanoparticles via a combustion synthesis using tartaric acid as fuel anddemonstrate its performance as hole transport layer (HTL) for Perovskite SolarCells (PVSCs).
Featurization successful!
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 15, 'nm', 3],[276.0, 15, 'nm', 4]

H
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237820, 237820)
 In the present study, we report the synthesis and characterization of alow-temperature solution-processable monodispersed nickel cobaltite (NiCo2O4)nanoparticles via a combustion synthesis using tartaric acid as fuel anddemonstrate its performance as hole transport layer (HTL) for Perovskite SolarCells (PVSCs).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 15, 'nm', 3],[235.0, 15, 'nm', 4]

(PVSCs)
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237834, 237839)
 In the present study, we report the synthesis and characterization of alow-temperature solution-processable monodispersed nickel cobaltite (NiCo2O4)nanoparticles via a combustion synthesis using tartaric acid as fuel anddemonstrate its performance as hole transport layer (HTL) for Perovskite SolarCells (PVSCs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 15, 'nm', 3],[216.0, 15, 'nm', 4]

NiCo2O4
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237842, 237846)
 NiCo2O4 is a p<missing VAR>-type semiconductor consisting of environmentallyfriendly, abundant elements and higher conductivity compared to NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 15, 'nm', 2],[209.0, 15, 'nm', 3]

NiO
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237882, 237883)
 NiCo2O4 is a p<missing VAR>-type semiconductor consisting of environmentallyfriendly, abundant elements and higher conductivity compared to NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 15, 'nm', 2],[172.0, 15, 'nm', 3]

NiCo2O4
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237903, 237907)
 We showthat the combustion synthesis of spinel NiCo2O4 using tartaric acid as fuel canbe used to control the NPs size and provide smooth, compact and homogeneousfunctional HT<missing VAR>Ls processed by blade coating.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 15, 'nm', 1],[148.0, 15, 'nm', 2]

N
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237932, 237932)
 We showthat the combustion synthesis of spinel NiCo2O4 using tartaric acid as fuel canbe used to control the NPs size and provide smooth, compact and homogeneousfunctional HT<missing VAR>Ls processed by blade coating.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 15, 'nm', 1],[123.0, 15, 'nm', 2]

H
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237953, 237953)
 We showthat the combustion synthesis of spinel NiCo2O4 using tartaric acid as fuel canbe used to control the NPs size and provide smooth, compact and homogeneousfunctional HT<missing VAR>Ls processed by blade coating.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 15, 'nm', 1],[102.0, 15, 'nm', 2]

PVSCs
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237970, 237973)
 Study of PVSCs with differentNiCo2O4 thickness as HTL reveal a difference on hole extraction efficiency andfor 15 nm optimized thickness enhanced hole carrier collection is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 15, 'nm', 0],[82.0, 15, 'nm', 1]

NiCo2O4
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237980, 237984)
 Study of PVSCs with differentNiCo2O4 thickness as HTL reveal a difference on hole extraction efficiency andfor 15 nm optimized thickness enhanced hole carrier collection is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 15, 'nm', 0],[71.0, 15, 'nm', 1]

H
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(237990, 237990)
 Study of PVSCs with differentNiCo2O4 thickness as HTL reveal a difference on hole extraction efficiency andfor 15 nm optimized thickness enhanced hole carrier collection is achieved.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 15, 'nm', 0],[65.0, 15, 'nm', 1]

As
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(238031, 238031)
 Asa result, p-i-n<missing VAR> structure of PVSCs with 15 nm NiCo2O4 HT<missing VAR>Ls showed reliableperformance and power conversion efficiency values in the range of 15.5 % withnegligible hysteresis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 15, 'nm', 1],[24.0, 15, 'nm', 0]

PVSCs
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(238049, 238052)
 Asa result, p-i-n<missing VAR> structure of PVSCs with 15 nm NiCo2O4 HT<missing VAR>Ls showed reliableperformance and power conversion efficiency values in the range of 15.5 % withnegligible hysteresis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 15, 'nm', 1],[3.0, 15, 'nm', 0]

NiCo2O4
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(238057, 238061)
 Asa result, p-i-n<missing VAR> structure of PVSCs with 15 nm NiCo2O4 HT<missing VAR>Ls showed reliableperformance and power conversion efficiency values in the range of 15.5 % withnegligible hysteresis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 15, 'nm', 1],[2.0, 15, 'nm', 0]

H
###Low Temperature Combustion Synthesis of a Spinel NiCo2O4 Hole Transport Layer for Perovskite Photovoltaics|Ioannis T. Papadas,Apostolos Ioakeimidis,Gerasimos S. Armatas,Stelios A. Choulis###
(238063, 238063)
 Asa result, p-i-n<missing VAR> structure of PVSCs with 15 nm NiCo2O4 HT<missing VAR>Ls showed reliableperformance and power conversion efficiency values in the range of 15.5 % withnegligible hysteresis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 15, 'nm', 1],[8.0, 15, 'nm', 0]

CH3NH3PbI3
###Iodide-methylammonium interaction is responsible for ferroelectricity in CH3NH3PbI3|Joachim Breternitz,Frederike Lehmann,Sarah A. Barnett,Harriott Nowell,Susan Schorr###
(238128, 238136)
Iodide-methylammonium interaction is responsible for ferroelectricity in CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Iodide-methylammonium interaction is responsible for ferroelectricity in CH3NH3PbI3|Joachim Breternitz,Frederike Lehmann,Sarah A. Barnett,Harriott Nowell,Susan Schorr###
(238189, 238197)
 Excellent conversion efficiencies of over 20 % and facile cell productionhave placed hybrid perovskites at the forefront of novel solar cell materialswith CH3NH3PbI3 being its archetypal compound.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Iodide-methylammonium interaction is responsible for ferroelectricity in CH3NH3PbI3|Joachim Breternitz,Frederike Lehmann,Sarah A. Barnett,Harriott Nowell,Susan Schorr###
(238214, 238222)
 The question why CH3NH3PbI3 hassuch extraordinary characteristics, particularly a hugely efficient lightabsorption, is hotly debated with ferroelectricity being a promising candidate.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Inverse Design of Potential Singlet Fission Molecules using a Transfer Learning Based Approach|Akshay Subramanian,Utkarsh Saha,Tejasvini Sharma,Naveen K. Tailor,Soumitra Satapathi###
(238729, 238729)
 In our work, we put forwardinverse design of possible singlet fission molecules using a transfer learningbased approach where we make use of a much larger ChEMBL<missing VAR> dataset ofstructurally similar molecules to transfer the learned characteristics to thesinglet fission dataset.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Inverse Design of Potential Singlet Fission Molecules using a Transfer Learning Based Approach|Akshay Subramanian,Utkarsh Saha,Tejasvini Sharma,Naveen K. Tailor,Soumitra Satapathi###
(238789, 238789)
 In our work, we put forwardinverse design of possible singlet fission molecules using a transfer learningbased approach where we make use of a much larger ChEMBL<missing VAR> dataset ofstructurally similar molecules to transfer the learned characteristics to thesinglet fission dataset.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSCs
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(238875, 238877)
 Understanding mechanisms in D<missing VAR>SSCs is fundamental for their improvement; thisincludes the nanocrystalline semiconducting layer behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(238911, 238913)
 Differentmesoporous TiO2 layers are fabricated and analyzed for possible use in D<missing VAR>SSCsolar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSC
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(238934, 238936)
 Differentmesoporous TiO2 layers are fabricated and analyzed for possible use in D<missing VAR>SSCsolar cells.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P123
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(238956, 238957)
 The preparations included the addition of P123 triblock copolymeras structuring agent to the synthesized anatase sol.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P25
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(238996, 238997)
 This preparation was alsomixed with Degussa P25 nanoparticles in one case and polystyrene latex inanother.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(239023, 239025)
 Mesoporous mixed TiO2-SiO2 thin layers were also analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiO2
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(239027, 239029)
 Mesoporous mixed TiO2-SiO2 thin layers were also analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(239087, 239087)
 The diversemorphology and features are studied by microscopic techniques and by means ofspectral quantum efficiency of a photoelectrochemical cell (PE<missing VAR>C) that uses asphotoelectrode the unsensitized porous TiO2 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(239089, 239089)
 The diversemorphology and features are studied by microscopic techniques and by means ofspectral quantum efficiency of a photoelectrochemical cell (PE<missing VAR>C) that uses asphotoelectrode the unsensitized porous TiO2 layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(239107, 239109)
 The diversemorphology and features are studied by microscopic techniques and by means ofspectral quantum efficiency of a photoelectrochemical cell (PE<missing VAR>C) that uses asphotoelectrode the unsensitized porous TiO2 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###On fundamental mechanisms in dye sensitized solar cells through the behaviour of different mesoporous titanium dioxide films|Lidice Vaillant Roca,Elena Vigil,Fresnel Forcade,Thierry Thami,Hania Adnani,Christelle Yacou,André Ayral,Pierre Saint-Grégoire###
(239182, 239184)
 We have found that a very high specific area due to verysmall nanocrystals and small pores can hinder electrolyte penetration in thepores formed by TiO2 nanograins, affecting photoelectrodes efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br3
###Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells|Michael Kulbak,Satyajit Gupta,Nir Kedem,Igal Levine,Tatyana Bendikov,Gary Hodes,David Cahen###
(239260, 239261)
 Direct comparison between perovskite-structured hybrid organic-inorganic -methyl ammonium lead bromide (M<missing VAR>APbBr3) and all-inorganic cesium lead bromide(CsPbBr3), allows identifying possible fundamental differences in theirstructural, thermal and electronic characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, -20, '%', 4]

(CsPbBr3)
###Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells|Michael Kulbak,Satyajit Gupta,Nir Kedem,Igal Levine,Tatyana Bendikov,Gary Hodes,David Cahen###
(239277, 239282)
 Direct comparison between perovskite-structured hybrid organic-inorganic -methyl ammonium lead bromide (M<missing VAR>APbBr3) and all-inorganic cesium lead bromide(CsPbBr3), allows identifying possible fundamental differences in theirstructural, thermal and electronic characteristics.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, -20, '%', 4]

CsPbBr3
###Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells|Michael Kulbak,Satyajit Gupta,Nir Kedem,Igal Levine,Tatyana Bendikov,Gary Hodes,David Cahen###
(239334, 239337)
 Both materials possess asimilar direct optical band-gap, but CsPbBr3 demonstrates a higher thermalstability than M<missing VAR>APbBr3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, -20, '%', 3]

PbBr3
###Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells|Michael Kulbak,Satyajit Gupta,Nir Kedem,Igal Levine,Tatyana Bendikov,Gary Hodes,David Cahen###
(239354, 239356)
 Both materials possess asimilar direct optical band-gap, but CsPbBr3 demonstrates a higher thermalstability than M<missing VAR>APbBr3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, -20, '%', 3]

In
###Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells|Michael Kulbak,Satyajit Gupta,Nir Kedem,Igal Levine,Tatyana Bendikov,Gary Hodes,David Cahen###
(239359, 239359)
 In order to compare device properties we fabricatedsolar cells, with similarly synthesized M<missing VAR>APbBr3 or CsPbBr3, over mesoporoustitania scaffolds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, -20, '%', 2]

PbBr3
###Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells|Michael Kulbak,Satyajit Gupta,Nir Kedem,Igal Levine,Tatyana Bendikov,Gary Hodes,David Cahen###
(239389, 239391)
 In order to compare device properties we fabricatedsolar cells, with similarly synthesized M<missing VAR>APbBr3 or CsPbBr3, over mesoporoustitania scaffolds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, -20, '%', 2]

CsPbBr3
###Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells|Michael Kulbak,Satyajit Gupta,Nir Kedem,Igal Levine,Tatyana Bendikov,Gary Hodes,David Cahen###
(239395, 239398)
 In order to compare device properties we fabricatedsolar cells, with similarly synthesized M<missing VAR>APbBr3 or CsPbBr3, over mesoporoustitania scaffolds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, -20, '%', 2]

Cs
###Cesium Enhances Long-Term Stability of Lead Bromide Perovskite-Based Solar Cells|Michael Kulbak,Satyajit Gupta,Nir Kedem,Igal Levine,Tatyana Bendikov,Gary Hodes,David Cahen###
(239482, 239482)
Further analysis shows that Cs-based devices are as efficient as, and morestable than methyl ammonium-based ones, after aging (storing the cells for 2weeks in a dry (relative humidity 15-20%) air atmosphere in the dark) for 2weeks, under constant illumination (at maximum power), and under electron beamirradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, -20, '%', 0]

In
###Performance Loss Analysis and Design Space Optimization of Perovskite Solar Cells|Sumanshu Agarwal,Pradeep R. Nair###
(239835, 239835)
 In addition, we extend the analyses to identify theoptimum thickness of perovskite and the factors affecting the optimum thicknesshave been discussed in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, -6, '%', 2],[66.0, -4, '%', 2]

(PSCs)
###The Effects of Interfacial Recombination and Injection Barrier on the Electrical Characteristics of Perovskite Solar Cells|Lin Xing Shi,Zi Shuai Wang,Zengguang Huang,Wei E. I. Sha,Haoran Wang,Zhen Zhou###
(239946, 239950)
 Charge carrier recombination in the perovskite solar cells (PSCs) has a deepinfluence on the electrical performance, such as open circuit voltage, shortcircuit current, fill factor and ultimately power conversion efficiency.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###The Effects of Interfacial Recombination and Injection Barrier on the Electrical Characteristics of Perovskite Solar Cells|Lin Xing Shi,Zi Shuai Wang,Zengguang Huang,Wei E. I. Sha,Haoran Wang,Zhen Zhou###
(240048, 240050)
 Theimpacts of injection barrier, recombination channels, doping properties ofcarrier transport layers and light intensity on the performance of PSCs aretheoretically investigated by drift-diffusion model in this work.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###The Effects of Interfacial Recombination and Injection Barrier on the Electrical Characteristics of Perovskite Solar Cells|Lin Xing Shi,Zi Shuai Wang,Zengguang Huang,Wei E. I. Sha,Haoran Wang,Zhen Zhou###
(240134, 240136)
 The resultsindicate that due to the injection barrier at the interfaces of perovskite andcarrier transport layer, the accumulated carriers modify the electric fielddistribution throughout the PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###The Effects of Interfacial Recombination and Injection Barrier on the Electrical Characteristics of Perovskite Solar Cells|Lin Xing Shi,Zi Shuai Wang,Zengguang Huang,Wei E. I. Sha,Haoran Wang,Zhen Zhou###
(240201, 240201)
 Thus, a zero electric field is generated at aspecific applied voltage, with greatly increases the interfacial recombination,resulting in a local kink of current density-voltage (J<missing VAR>-V) curve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###The Effects of Interfacial Recombination and Injection Barrier on the Electrical Characteristics of Perovskite Solar Cells|Lin Xing Shi,Zi Shuai Wang,Zengguang Huang,Wei E. I. Sha,Haoran Wang,Zhen Zhou###
(240230, 240232)
 This workprovides an effective strategy to improve the efficiency of PSCs by pertinentlyreducing both the injection barrier and interfacial recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Efficiency at Maximum Power of Laser Quantum Heat Engine Enhanced by Noise-Induced Coherence|Konstantin E. Dorfman,Dazhi Xu,Jianshu Cao###
(240327, 240327)
 In this letter, we report the lower andupper bounds for the performance of quantum heat engines determined by theefficiency at maximum power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240558, 240558)
Role of E<missing VAR>V+0.98 e<missing VAR>V trap in light soaking-induced short circuit current instability in CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240563, 240563)
Role of E<missing VAR>V+0.98 e<missing VAR>V trap in light soaking-induced short circuit current instability in CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240585, 240586)
Role of E<missing VAR>V+0.98 e<missing VAR>V trap in light soaking-induced short circuit current instability in CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240588, 240588)
Role of E<missing VAR>V+0.98 e<missing VAR>V trap in light soaking-induced short circuit current instability in CIG<missing VAR>S solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240605, 240605)
 Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIG<missing VAR>S) solar cellsare a prevalent and urgent issue to resolve to improve performance, uniformity,and reliability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240607, 240607)
 Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIG<missing VAR>S) solar cellsare a prevalent and urgent issue to resolve to improve performance, uniformity,and reliability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240609, 240609)
 Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIG<missing VAR>S) solar cellsare a prevalent and urgent issue to resolve to improve performance, uniformity,and reliability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se2
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240611, 240612)
 Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIG<missing VAR>S) solar cellsare a prevalent and urgent issue to resolve to improve performance, uniformity,and reliability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240615, 240616)
 Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIG<missing VAR>S) solar cellsare a prevalent and urgent issue to resolve to improve performance, uniformity,and reliability.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240618, 240618)
 Light-induced instabilities/degradation in Cu(In,Ga)Se2 (CIG<missing VAR>S) solar cellsare a prevalent and urgent issue to resolve to improve performance, uniformity,and reliability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240695, 240695)
 Here, mechanisms contributing to light-induced instabilitiesare identified focusing on an observed short circuit current (J<missing VAR>SC) reduction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240746, 240747)
External quantum efficiency measurements before and after light soakingidentified a reduction in long wavelength photon carrier collection efficiencyin the CIG<missing VAR>S absorber layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240749, 240749)
External quantum efficiency measurements before and after light soakingidentified a reduction in long wavelength photon carrier collection efficiencyin the CIG<missing VAR>S absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240770, 240770)
 Using deep level optical spectroscopy (DLOS), theconcentration of CIG<missing VAR>S E<missing VAR>V+0.98 e<missing VAR>V deep level is correlated with the amount ofJ<missing VAR>SC degradation, Finally, capacitance voltage (C-V) measurements reveal lightinduces a large reduction in the depletion depth and reduction of carriercollection and are all correlated with the J<missing VAR>SC reduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240781, 240782)
 Using deep level optical spectroscopy (DLOS), theconcentration of CIG<missing VAR>S E<missing VAR>V+0.98 e<missing VAR>V deep level is correlated with the amount ofJ<missing VAR>SC degradation, Finally, capacitance voltage (C-V) measurements reveal lightinduces a large reduction in the depletion depth and reduction of carriercollection and are all correlated with the J<missing VAR>SC reduction.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240784, 240784)
 Using deep level optical spectroscopy (DLOS), theconcentration of CIG<missing VAR>S E<missing VAR>V+0.98 e<missing VAR>V deep level is correlated with the amount ofJ<missing VAR>SC degradation, Finally, capacitance voltage (C-V) measurements reveal lightinduces a large reduction in the depletion depth and reduction of carriercollection and are all correlated with the J<missing VAR>SC reduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240787, 240787)
 Using deep level optical spectroscopy (DLOS), theconcentration of CIG<missing VAR>S E<missing VAR>V+0.98 e<missing VAR>V deep level is correlated with the amount ofJ<missing VAR>SC degradation, Finally, capacitance voltage (C-V) measurements reveal lightinduces a large reduction in the depletion depth and reduction of carriercollection and are all correlated with the J<missing VAR>SC reduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240792, 240792)
 Using deep level optical spectroscopy (DLOS), theconcentration of CIG<missing VAR>S E<missing VAR>V+0.98 e<missing VAR>V deep level is correlated with the amount ofJ<missing VAR>SC degradation, Finally, capacitance voltage (C-V) measurements reveal lightinduces a large reduction in the depletion depth and reduction of carriercollection and are all correlated with the J<missing VAR>SC reduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240812, 240813)
 Using deep level optical spectroscopy (DLOS), theconcentration of CIG<missing VAR>S E<missing VAR>V+0.98 e<missing VAR>V deep level is correlated with the amount ofJ<missing VAR>SC degradation, Finally, capacitance voltage (C-V) measurements reveal lightinduces a large reduction in the depletion depth and reduction of carriercollection and are all correlated with the J<missing VAR>SC reduction.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240826, 240826)
 Using deep level optical spectroscopy (DLOS), theconcentration of CIG<missing VAR>S E<missing VAR>V+0.98 e<missing VAR>V deep level is correlated with the amount ofJ<missing VAR>SC degradation, Finally, capacitance voltage (C-V) measurements reveal lightinduces a large reduction in the depletion depth and reduction of carriercollection and are all correlated with the J<missing VAR>SC reduction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240828, 240828)
 Using deep level optical spectroscopy (DLOS), theconcentration of CIG<missing VAR>S E<missing VAR>V+0.98 e<missing VAR>V deep level is correlated with the amount ofJ<missing VAR>SC degradation, Finally, capacitance voltage (C-V) measurements reveal lightinduces a large reduction in the depletion depth and reduction of carriercollection and are all correlated with the J<missing VAR>SC reduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240878, 240879)
 Using deep level optical spectroscopy (DLOS), theconcentration of CIG<missing VAR>S E<missing VAR>V+0.98 e<missing VAR>V deep level is correlated with the amount ofJ<missing VAR>SC degradation, Finally, capacitance voltage (C-V) measurements reveal lightinduces a large reduction in the depletion depth and reduction of carriercollection and are all correlated with the J<missing VAR>SC reduction.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240890, 240890)
 Finally, the E<missing VAR>V+0.53e<missing VAR>V trap concentrations are shown to correlate with VOC instability but not theJ<missing VAR>SC reduction confirming that multiple trap-induced mechanism are responsiblefor the light-induced instabilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240896, 240896)
 Finally, the E<missing VAR>V+0.53e<missing VAR>V trap concentrations are shown to correlate with VOC instability but not theJ<missing VAR>SC reduction confirming that multiple trap-induced mechanism are responsiblefor the light-induced instabilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VOC
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240912, 240914)
 Finally, the E<missing VAR>V+0.53e<missing VAR>V trap concentrations are shown to correlate with VOC instability but not theJ<missing VAR>SC reduction confirming that multiple trap-induced mechanism are responsiblefor the light-induced instabilities.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Role of EV+0.98 eV trap in light soaking-induced short circuit current instability in CIGS solar cells|P. K. Paul,T. Jarmar,L. Stolt,A. Rockett,A. R. Arehart###
(240926, 240927)
 Finally, the E<missing VAR>V+0.53e<missing VAR>V trap concentrations are shown to correlate with VOC instability but not theJ<missing VAR>SC reduction confirming that multiple trap-induced mechanism are responsiblefor the light-induced instabilities.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Transient Analysis during Maximum Power Point Tracking (TrAMPPT) to Assess Dynamic Response of Perovskite Solar Cells|Aniela Czudek,Katrin Hirselandt,Lukas Kegelmann,Amran Al-Ashouri,Marko Jošt,Weiwei Zuo,Antonio Abate,Lars Korte,Steve Albrecht,Janardan Dagar,Eva L. Unger###
(240985, 240986)
Transient Analysis during Maximum Power Point Tracking (TrAM<missing VAR>PPT) to Assess Dynamic Response of Perovskite Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Transient Analysis during Maximum Power Point Tracking (TrAMPPT) to Assess Dynamic Response of Perovskite Solar Cells|Aniela Czudek,Katrin Hirselandt,Lukas Kegelmann,Amran Al-Ashouri,Marko Jošt,Weiwei Zuo,Antonio Abate,Lars Korte,Steve Albrecht,Janardan Dagar,Eva L. Unger###
(241089, 241090)
Maximum power point tracking, M<missing VAR>PPT<missing VAR>, enables to determine the steady-statemaximum power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Transient Analysis during Maximum Power Point Tracking (TrAMPPT) to Assess Dynamic Response of Perovskite Solar Cells|Aniela Czudek,Katrin Hirselandt,Lukas Kegelmann,Amran Al-Ashouri,Marko Jošt,Weiwei Zuo,Antonio Abate,Lars Korte,Steve Albrecht,Janardan Dagar,Eva L. Unger###
(241122, 241123)
 However, the M<missing VAR>PPT<missing VAR> does not provide anyinformation on the device performance parameters, which are reliable only ifextracted from current-voltage curves collected under steady-state conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Transient Analysis during Maximum Power Point Tracking (TrAMPPT) to Assess Dynamic Response of Perovskite Solar Cells|Aniela Czudek,Katrin Hirselandt,Lukas Kegelmann,Amran Al-Ashouri,Marko Jošt,Weiwei Zuo,Antonio Abate,Lars Korte,Steve Albrecht,Janardan Dagar,Eva L. Unger###
(241218, 241218)
We show that is possible to determine the shorter settling or delay timesuitable to carry out J<missing VAR>-V measurements under steady-state conditions byanalysis of the transient device response around the M<missing VAR>PP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PP
###Transient Analysis during Maximum Power Point Tracking (TrAMPPT) to Assess Dynamic Response of Perovskite Solar Cells|Aniela Czudek,Katrin Hirselandt,Lukas Kegelmann,Amran Al-Ashouri,Marko Jošt,Weiwei Zuo,Antonio Abate,Lars Korte,Steve Albrecht,Janardan Dagar,Eva L. Unger###
(241250, 241251)
We show that is possible to determine the shorter settling or delay timesuitable to carry out J<missing VAR>-V measurements under steady-state conditions byanalysis of the transient device response around the M<missing VAR>PP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Transient Analysis during Maximum Power Point Tracking (TrAMPPT) to Assess Dynamic Response of Perovskite Solar Cells|Aniela Czudek,Katrin Hirselandt,Lukas Kegelmann,Amran Al-Ashouri,Marko Jošt,Weiwei Zuo,Antonio Abate,Lars Korte,Steve Albrecht,Janardan Dagar,Eva L. Unger###
(241277, 241277)
 This procedure provesto be more time-efficient than measurement J<missing VAR>-V measurements at a variety ofscan rates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Watching Space Charge Build up in an Organic Solar Cell|Sebastian Wilken,Oskar J. Sandberg,Dorothea Scheunemann,Ronald Österbacka###
(241398, 241399)
 Space charge effects can significantly degrade charge collection in organicphotovoltaics (OPVs), especially in thick-film devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Watching Space Charge Build up in an Organic Solar Cell|Sebastian Wilken,Oskar J. Sandberg,Dorothea Scheunemann,Ronald Österbacka###
(241488, 241488)
 In this work, a method isintroduced how the build-up of space charge due to imbalanced transport can bemonitored in a real operating organic solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OPV
###Watching Space Charge Build up in an Organic Solar Cell|Sebastian Wilken,Oskar J. Sandberg,Dorothea Scheunemann,Ronald Österbacka###
(241614, 241616)
 This makes it suitable for thescreening of new OPV materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Watching Space Charge Build up in an Organic Solar Cell|Sebastian Wilken,Oskar J. Sandberg,Dorothea Scheunemann,Ronald Österbacka###
(241705, 241706)
It is shown that when charge recombination is sufficiently reduced, balancedtransport is not a necessary condition for efficient thick-film OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Partially-Bright Triplet Excitons in Perovskite Nanocrystals|Albert Liu,Diogo B. Almeida,Luiz G. Bonato,Gabriel Nagamine,Luiz F. Zagonel,Ana F. Nogueira,Lazaro A. Padilha,Steven T. Cundiff###
(241815, 241815)
 In addition,recent advances have applied perovskite nanocrystals (NCs) in light-emittingdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NCs)
###Partially-Bright Triplet Excitons in Perovskite Nanocrystals|Albert Liu,Diogo B. Almeida,Luiz G. Bonato,Gabriel Nagamine,Luiz F. Zagonel,Ana F. Nogueira,Lazaro A. Padilha,Steven T. Cundiff###
(241833, 241836)
 In addition,recent advances have applied perovskite nanocrystals (NCs) in light-emittingdevices.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCs
###Partially-Bright Triplet Excitons in Perovskite Nanocrystals|Albert Liu,Diogo B. Almeida,Luiz G. Bonato,Gabriel Nagamine,Luiz F. Zagonel,Ana F. Nogueira,Lazaro A. Padilha,Steven T. Cundiff###
(241870, 241871)
 It was discovered recently that, for cesium lead-halide perovskiteNCs, their unusually efficient light-emission may be due to a unique excitonicfine-structure composed of three bright triplet states that minimally interactwith a proximal dark singlet state.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCs
###Partially-Bright Triplet Excitons in Perovskite Nanocrystals|Albert Liu,Diogo B. Almeida,Luiz G. Bonato,Gabriel Nagamine,Luiz F. Zagonel,Ana F. Nogueira,Lazaro A. Padilha,Steven T. Cundiff###
(241952, 241953)
 To study this fine-structure withoutisolating single NCs, we use multi-dimensional coherent spectroscopy atcryogenic temperatures to reveal coherences involving triplet states of aCsPbI3 NC ensemble.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPbI3
###Partially-Bright Triplet Excitons in Perovskite Nanocrystals|Albert Liu,Diogo B. Almeida,Luiz G. Bonato,Gabriel Nagamine,Luiz F. Zagonel,Ana F. Nogueira,Lazaro A. Padilha,Steven T. Cundiff###
(241992, 241995)
 To study this fine-structure withoutisolating single NCs, we use multi-dimensional coherent spectroscopy atcryogenic temperatures to reveal coherences involving triplet states of aCsPbI3 NC ensemble.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NC
###Partially-Bright Triplet Excitons in Perovskite Nanocrystals|Albert Liu,Diogo B. Almeida,Luiz G. Bonato,Gabriel Nagamine,Luiz F. Zagonel,Ana F. Nogueira,Lazaro A. Padilha,Steven T. Cundiff###
(241997, 241998)
 To study this fine-structure withoutisolating single NCs, we use multi-dimensional coherent spectroscopy atcryogenic temperatures to reveal coherences involving triplet states of aCsPbI3 NC ensemble.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###Organic Solar Cells; Fabrication Technique, Operating Principle, Characterization and Improvement|Fahmi F. Muhammadsharif###
(242118, 242122)
 Organic solar cells (OSCs) have received a special attention over the pastyears due to their solution processability, low cost, flexibility andcapability of role-to-role production.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1, '%', 1],[98.0, 5, '%', 1],[102.0, 2005, 'and', 1],[110.0, 13, '%', 1],[114.0, 2017, 'thanks', 1]

CuNi
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242436, 242437)
Surface Treatment of CuNiOx Hole-Transporting Layer Using b<missing VAR>eta-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 40, 'times', 4],[340.0, 15.51, '%', 5],[349.0, 1000, 'h', 5]

(PSCs)
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242482, 242486)
 Inverted perovskite solar cells (PSCs) using a CuNiOx hole transportinglayer (HTL) often exhibit stability issues and in some cases J<missing VAR>/V hysteresis.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 40, 'times', 3],[291.0, 15.51, '%', 4],[300.0, 1000, 'h', 4]

CuNi
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242492, 242493)
 Inverted perovskite solar cells (PSCs) using a CuNiOx hole transportinglayer (HTL) often exhibit stability issues and in some cases J<missing VAR>/V hysteresis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 40, 'times', 3],[284.0, 15.51, '%', 4],[293.0, 1000, 'h', 4]

H
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242504, 242504)
 Inverted perovskite solar cells (PSCs) using a CuNiOx hole transportinglayer (HTL) often exhibit stability issues and in some cases J<missing VAR>/V hysteresis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 40, 'times', 3],[273.0, 15.51, '%', 4],[282.0, 1000, 'h', 4]

V
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242527, 242527)
 Inverted perovskite solar cells (PSCs) using a CuNiOx hole transportinglayer (HTL) often exhibit stability issues and in some cases J<missing VAR>/V hysteresis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 40, 'times', 3],[250.0, 15.51, '%', 4],[259.0, 1000, 'h', 4]

In
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242532, 242532)
 Inthis work, we developed a b<missing VAR>eta-alanine surface treatment process on CuNiOxHTL that provides J<missing VAR>/V hysteresis-free, highly efficient, and thermally stableinverted PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 40, 'times', 2],[245.0, 15.51, '%', 3],[254.0, 1000, 'h', 3]

CuNi
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242559, 242560)
 Inthis work, we developed a b<missing VAR>eta-alanine surface treatment process on CuNiOxHTL that provides J<missing VAR>/V hysteresis-free, highly efficient, and thermally stableinverted PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 40, 'times', 2],[217.0, 15.51, '%', 3],[226.0, 1000, 'h', 3]

H
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242564, 242564)
 Inthis work, we developed a b<missing VAR>eta-alanine surface treatment process on CuNiOxHTL that provides J<missing VAR>/V hysteresis-free, highly efficient, and thermally stableinverted PSCs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 40, 'times', 2],[213.0, 15.51, '%', 3],[222.0, 1000, 'h', 3]

V
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242574, 242574)
 Inthis work, we developed a b<missing VAR>eta-alanine surface treatment process on CuNiOxHTL that provides J<missing VAR>/V hysteresis-free, highly efficient, and thermally stableinverted PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 40, 'times', 2],[203.0, 15.51, '%', 3],[212.0, 1000, 'h', 3]

PSCs
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242595, 242597)
 Inthis work, we developed a b<missing VAR>eta-alanine surface treatment process on CuNiOxHTL that provides J<missing VAR>/V hysteresis-free, highly efficient, and thermally stableinverted PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 40, 'times', 2],[180.0, 15.51, '%', 3],[189.0, 1000, 'h', 3]

CuNi
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242620, 242621)
 The improved device performance due to b<missing VAR>eta-alanine-treatedCuNiOx HTL is attributed to the formation of an intimate CuNiOx/perovskiteinterface and reduced charge trap density in the bulk perovskite active layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 40, 'times', 1],[156.0, 15.51, '%', 2],[165.0, 1000, 'h', 2]

H
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242624, 242624)
 The improved device performance due to b<missing VAR>eta-alanine-treatedCuNiOx HTL is attributed to the formation of an intimate CuNiOx/perovskiteinterface and reduced charge trap density in the bulk perovskite active layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 40, 'times', 1],[153.0, 15.51, '%', 2],[162.0, 1000, 'h', 2]

CuNi
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242644, 242645)
 The improved device performance due to b<missing VAR>eta-alanine-treatedCuNiOx HTL is attributed to the formation of an intimate CuNiOx/perovskiteinterface and reduced charge trap density in the bulk perovskite active layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 40, 'times', 1],[132.0, 15.51, '%', 2],[141.0, 1000, 'h', 2]

CuNi
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242692, 242693)
The b<missing VAR>eta-alanine surface treatment process on CuNiOx HTL eliminates majorthermal degradation mechanisms, providing 40 times increased lifetimeperformance under accelerated heat lifetime conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 40, 'times', 0],[84.0, 15.51, '%', 1],[93.0, 1000, 'h', 1]

H
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242696, 242696)
The b<missing VAR>eta-alanine surface treatment process on CuNiOx HTL eliminates majorthermal degradation mechanisms, providing 40 times increased lifetimeperformance under accelerated heat lifetime conditions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 40, 'times', 0],[81.0, 15.51, '%', 1],[90.0, 1000, 'h', 1]

PC
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242767, 242768)
 By using the proposedsurface treatment, we report optimized devices with high power conversionefficiency (PCE) (up to 15.51%) and up to 1000 h lifetime under acceleratedheat lifetime conditions (60 C, N2).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 40, 'times', 1],[9.0, 15.51, '%', 0],[18.0, 1000, 'h', 0]

C
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242804, 242804)
 By using the proposedsurface treatment, we report optimized devices with high power conversionefficiency (PCE) (up to 15.51%) and up to 1000 h lifetime under acceleratedheat lifetime conditions (60 C, N2).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 40, 'times', 1],[27.0, 15.51, '%', 0],[18.0, 1000, 'h', 0]

N2
###Surface Treatment of Cu:NiOx Hole-Transporting Layer Using \b{eta}-Alanine for Hysteresis-Free and Thermally Stable Inverted Perovskite Solar Cells|Fedros Galatopoulos,Ioannis T. Papadas,Apostolos Ioakeimidis,Polyvios Eleftheriou,Stelios A. Choulis###
(242807, 242808)
 By using the proposedsurface treatment, we report optimized devices with high power conversionefficiency (PCE) (up to 15.51%) and up to 1000 h lifetime under acceleratedheat lifetime conditions (60 C, N2).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 40, 'times', 1],[30.0, 15.51, '%', 0],[21.0, 1000, 'h', 0]

In
###Effect of the structure of lead iodine perovskites on the photovoltaic efficiencies|Cesar Tablero###
(242966, 242966)
 In order to analyze the contributions of thedifferent atoms to the absorption coefficients we split them into amany-species expansion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###dPV: An End-to-End Differentiable Solar-Cell Simulator|Sean Mann,Eric Fadel,Samuel S. Schoenholz,Ekin D. Cubuk,Steven G. Johnson,Giuseppe Romano###
(243131, 243132)
d<missing VAR>PV An End-to-End Differentiable Solar-Cell Simulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###dPV: An End-to-End Differentiable Solar-Cell Simulator|Sean Mann,Eric Fadel,Samuel S. Schoenholz,Ekin D. Cubuk,Steven G. Johnson,Giuseppe Romano###
(243156, 243157)
 We introduce d<missing VAR>PV, an end-to-end differentiable photovoltaic (PV) cellsimulator based on the drift-diffusion model and Beer-Lambert law for opticalabsorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PV)
###dPV: An End-to-End Differentiable Solar-Cell Simulator|Sean Mann,Eric Fadel,Samuel S. Schoenholz,Ekin D. Cubuk,Steven G. Johnson,Giuseppe Romano###
(243172, 243175)
 We introduce d<missing VAR>PV, an end-to-end differentiable photovoltaic (PV) cellsimulator based on the drift-diffusion model and Beer-Lambert law for opticalabsorption.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###dPV: An End-to-End Differentiable Solar-Cell Simulator|Sean Mann,Eric Fadel,Samuel S. Schoenholz,Ekin D. Cubuk,Steven G. Johnson,Giuseppe Romano###
(243211, 243212)
 d<missing VAR>PV is programmed in Python using JAX, an automatic differentiation(AD) library for scientific computing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###dPV: An End-to-End Differentiable Solar-Cell Simulator|Sean Mann,Eric Fadel,Samuel S. Schoenholz,Ekin D. Cubuk,Steven G. Johnson,Giuseppe Romano###
(243270, 243271)
 Using AD<missing VAR> coupled with the implicitfunction theorem, d<missing VAR>PV computes the power conversion efficiency (PCE) of aninput PV design as well as the derivative of the PCE<missing VAR> with respect to any inputparameters, all within comparable time of solving the forward problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###dPV: An End-to-End Differentiable Solar-Cell Simulator|Sean Mann,Eric Fadel,Samuel S. Schoenholz,Ekin D. Cubuk,Steven G. Johnson,Giuseppe Romano###
(243284, 243285)
 Using AD<missing VAR> coupled with the implicitfunction theorem, d<missing VAR>PV computes the power conversion efficiency (PCE) of aninput PV design as well as the derivative of the PCE<missing VAR> with respect to any inputparameters, all within comparable time of solving the forward problem.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###dPV: An End-to-End Differentiable Solar-Cell Simulator|Sean Mann,Eric Fadel,Samuel S. Schoenholz,Ekin D. Cubuk,Steven G. Johnson,Giuseppe Romano###
(243296, 243297)
 Using AD<missing VAR> coupled with the implicitfunction theorem, d<missing VAR>PV computes the power conversion efficiency (PCE) of aninput PV design as well as the derivative of the PCE<missing VAR> with respect to any inputparameters, all within comparable time of solving the forward problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###dPV: An End-to-End Differentiable Solar-Cell Simulator|Sean Mann,Eric Fadel,Samuel S. Schoenholz,Ekin D. Cubuk,Steven G. Johnson,Giuseppe Romano###
(243315, 243316)
 Using AD<missing VAR> coupled with the implicitfunction theorem, d<missing VAR>PV computes the power conversion efficiency (PCE) of aninput PV design as well as the derivative of the PCE<missing VAR> with respect to any inputparameters, all within comparable time of solving the forward problem.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Triple-cation perovskite solar cells fabricated by hybrid PVD/blade coating process using green solvents|Severin Siegrist,Shih-Chi Yang,Evgeniia Gilshtein,Xiaoxiao Sun,Ayodhya N. Tiwari,Fan Fu###
(243470, 243471)
Triple-cation perovskite solar cells fabricated by hybrid PVD<missing VAR>/blade coating process using green solvents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 1.16, 'V', 7],[357.0, 5, 'cm', 7],[360.0, 5, 'cm', 7]

(PSCs)
###Triple-cation perovskite solar cells fabricated by hybrid PVD/blade coating process using green solvents|Severin Siegrist,Shih-Chi Yang,Evgeniia Gilshtein,Xiaoxiao Sun,Ayodhya N. Tiwari,Fan Fu###
(243508, 243512)
 The scalability of highly efficient organic-inorganic perovskite solar cells(PSCs) is one of the remaining challenges of solar module manufacturing.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 1.16, 'V', 6],[316.0, 5, 'cm', 6],[319.0, 5, 'cm', 6]

PSCs
###Triple-cation perovskite solar cells fabricated by hybrid PVD/blade coating process using green solvents|Severin Siegrist,Shih-Chi Yang,Evgeniia Gilshtein,Xiaoxiao Sun,Ayodhya N. Tiwari,Fan Fu###
(243719, 243721)
 We fabricated PSCs based on this processand used blade coating to deposit both charge transporting layers (SnO2 andSpiro-OMeTAD) without hazardous solvents in ambient air.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1.16, 'V', 1],[107.0, 5, 'cm', 1],[110.0, 5, 'cm', 1]

SnO2
###Triple-cation perovskite solar cells fabricated by hybrid PVD/blade coating process using green solvents|Severin Siegrist,Shih-Chi Yang,Evgeniia Gilshtein,Xiaoxiao Sun,Ayodhya N. Tiwari,Fan Fu###
(243753, 243755)
 We fabricated PSCs based on this processand used blade coating to deposit both charge transporting layers (SnO2 andSpiro-OMeTAD) without hazardous solvents in ambient air.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1.16, 'V', 1],[73.0, 5, 'cm', 1],[76.0, 5, 'cm', 1]

O
###Triple-cation perovskite solar cells fabricated by hybrid PVD/blade coating process using green solvents|Severin Siegrist,Shih-Chi Yang,Evgeniia Gilshtein,Xiaoxiao Sun,Ayodhya N. Tiwari,Fan Fu###
(243762, 243762)
 We fabricated PSCs based on this processand used blade coating to deposit both charge transporting layers (SnO2 andSpiro-OMeTAD) without hazardous solvents in ambient air.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1.16, 'V', 1],[66.0, 5, 'cm', 1],[69.0, 5, 'cm', 1]

PSCs
###Triple-cation perovskite solar cells fabricated by hybrid PVD/blade coating process using green solvents|Severin Siegrist,Shih-Chi Yang,Evgeniia Gilshtein,Xiaoxiao Sun,Ayodhya N. Tiwari,Fan Fu###
(243786, 243788)
 The fabricated PSCshave yielded open-circuit voltage up to 1.16 V and power conversion efficiencyof 18.7 % with good uniformity on 5 cm x<missing VAR> 5 cm substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1.16, 'V', 0],[40.0, 5, 'cm', 0],[43.0, 5, 'cm', 0]

PP
###Increasing the Efficiency of Photovoltaic Systems by Using Maximum Power Point Tracking (MPPT)|Alireza Tofigh Rihani,Majid Ghandchi###
(243870, 243871)
Increasing the Efficiency of Photovoltaic Systems by Using Maximum Power Point Tracking (M<missing VAR>PPT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 12, 'and', 3],[107.0, 42, 'percent', 3]

In
###Increasing the Efficiency of Photovoltaic Systems by Using Maximum Power Point Tracking (MPPT)|Alireza Tofigh Rihani,Majid Ghandchi###
(244104, 244104)
 In this research, the increasing efficiency of photovoltaicsystems has been investigated by using Maximum Power Point Tracking (M<missing VAR>PPT) intwo different modes contained connected to the Grid and disconnected from thegrid with simulation by MATLAB software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 12, 'and', 3],[126.0, 42, 'percent', 3]

PP
###Increasing the Efficiency of Photovoltaic Systems by Using Maximum Power Point Tracking (MPPT)|Alireza Tofigh Rihani,Majid Ghandchi###
(244144, 244145)
 In this research, the increasing efficiency of photovoltaicsystems has been investigated by using Maximum Power Point Tracking (M<missing VAR>PPT) intwo different modes contained connected to the Grid and disconnected from thegrid with simulation by MATLAB software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 12, 'and', 3],[166.0, 42, 'percent', 3]

B
###Increasing the Efficiency of Photovoltaic Systems by Using Maximum Power Point Tracking (MPPT)|Alireza Tofigh Rihani,Majid Ghandchi###
(244190, 244190)
 In this research, the increasing efficiency of photovoltaicsystems has been investigated by using Maximum Power Point Tracking (M<missing VAR>PPT) intwo different modes contained connected to the Grid and disconnected from thegrid with simulation by MATLAB software.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 12, 'and', 3],[212.0, 42, 'percent', 3]

Pb
###"Forbidden" polarisation and extraordinary piezoelectric effect in organometallic lead halide perovskites|Milica Vasiljevic,Marton Kollar,David Spirito,Lukas Riemer,Laszlo Forro,Endre Horvath,Semen Gorfman,Dragan Damjanovic###
(244381, 244381)
 Here, wereveal that electric field-and light-induced ionic motion in M<missing VAR>APbX<missing VAR>3 crystals(X<missing VAR>Cl, Br, I and M<missing VAR>ACH3NH3) leads to unexpected piezoelectric-like response, anorder of magnitude larger than in ferroelectric perovskite oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###"Forbidden" polarisation and extraordinary piezoelectric effect in organometallic lead halide perovskites|Milica Vasiljevic,Marton Kollar,David Spirito,Lukas Riemer,Laszlo Forro,Endre Horvath,Semen Gorfman,Dragan Damjanovic###
(244390, 244390)
 Here, wereveal that electric field-and light-induced ionic motion in M<missing VAR>APbX<missing VAR>3 crystals(X<missing VAR>Cl, Br, I and M<missing VAR>ACH3NH3) leads to unexpected piezoelectric-like response, anorder of magnitude larger than in ferroelectric perovskite oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###"Forbidden" polarisation and extraordinary piezoelectric effect in organometallic lead halide perovskites|Milica Vasiljevic,Marton Kollar,David Spirito,Lukas Riemer,Laszlo Forro,Endre Horvath,Semen Gorfman,Dragan Damjanovic###
(244393, 244393)
 Here, wereveal that electric field-and light-induced ionic motion in M<missing VAR>APbX<missing VAR>3 crystals(X<missing VAR>Cl, Br, I and M<missing VAR>ACH3NH3) leads to unexpected piezoelectric-like response, anorder of magnitude larger than in ferroelectric perovskite oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###"Forbidden" polarisation and extraordinary piezoelectric effect in organometallic lead halide perovskites|Milica Vasiljevic,Marton Kollar,David Spirito,Lukas Riemer,Laszlo Forro,Endre Horvath,Semen Gorfman,Dragan Damjanovic###
(244396, 244396)
 Here, wereveal that electric field-and light-induced ionic motion in M<missing VAR>APbX<missing VAR>3 crystals(X<missing VAR>Cl, Br, I and M<missing VAR>ACH3NH3) leads to unexpected piezoelectric-like response, anorder of magnitude larger than in ferroelectric perovskite oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H3
###"Forbidden" polarisation and extraordinary piezoelectric effect in organometallic lead halide perovskites|Milica Vasiljevic,Marton Kollar,David Spirito,Lukas Riemer,Laszlo Forro,Endre Horvath,Semen Gorfman,Dragan Damjanovic###
(244406, 244407)
 Here, wereveal that electric field-and light-induced ionic motion in M<missing VAR>APbX<missing VAR>3 crystals(X<missing VAR>Cl, Br, I and M<missing VAR>ACH3NH3) leads to unexpected piezoelectric-like response, anorder of magnitude larger than in ferroelectric perovskite oxides.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Preconditioning for a Phase-Field Model with Application to Morphology Evolution in Organic Semiconductors|Kai Bergermann,Carsten Deibel,Roland Herzog,Roderick C. I. MacKenzie,Jan-Frederik Pietschmann,Martin Stoll###
(244662, 244662)
 In this paper we present a computationalpipeline for the numerical solution of a ternary phase-field model fordescribing the nanomorphology of donor--acceptor semiconductor blends used inorganic photovoltaic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Preconditioning for a Phase-Field Model with Application to Morphology Evolution in Organic Semiconductors|Kai Bergermann,Carsten Deibel,Roland Herzog,Roderick C. I. MacKenzie,Jan-Frederik Pietschmann,Martin Stoll###
(244772, 244772)
 In order to solve the resulting large-scale linear systemsefficiently, we propose a preconditioning strategy that is based on efficientapproximations of the Schur-complement of a saddle point system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ab initio theory of free-carrier absorption in semiconductors|Xiao Zhang,Guangsha Shi,Joshua A. Leveillee,Feliciano Giustino,Emmanouil Kioupakis###
(245055, 245055)
 In this work, we develop a first-principles theory offree-carrier absorption taking into account both single-particle excitationsand the collective Drude term, and we demonstrate its application to the caseof doped Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Ab initio theory of free-carrier absorption in semiconductors|Xiao Zhang,Guangsha Shi,Joshua A. Leveillee,Feliciano Giustino,Emmanouil Kioupakis###
(245130, 245130)
 In this work, we develop a first-principles theory offree-carrier absorption taking into account both single-particle excitationsand the collective Drude term, and we demonstrate its application to the caseof doped Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Ab initio theory of free-carrier absorption in semiconductors|Xiao Zhang,Guangsha Shi,Joshua A. Leveillee,Feliciano Giustino,Emmanouil Kioupakis###
(245243, 245243)
 We identify the dominant processes that contribute to free-carrierabsorption at various photon wavelengths, and analyze the results to evaluatethe impact of this loss mechanism on the efficiency of Si-based optoelectronicdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PV)
###Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation|Dong Pu,Muhammad Abid Anwar,Jiachao Zhou,Renwei Mao,Xin Pan,Jian Chai,Feng Tian,Hua Wang,Huan Hu,Yang Xu###
(245340, 245343)
 Graphene-silicon Schottky junction (GSJ) which has the potential forlarge-scale manufacturing and integration can bring new opportunities toSchottky solar cells for photovoltaic (PV) power conversion.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 20, '%', 4]

V
###Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation|Dong Pu,Muhammad Abid Anwar,Jiachao Zhou,Renwei Mao,Xin Pan,Jian Chai,Feng Tian,Hua Wang,Huan Hu,Yang Xu###
(245386, 245386)
 However, theessential power conversion limitation for these devices lies in the smallopen-circuit voltage (Voc), which depends on the Schottky barrier height(SBH).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 20, '%', 3]

(SBH)
###Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation|Dong Pu,Muhammad Abid Anwar,Jiachao Zhou,Renwei Mao,Xin Pan,Jian Chai,Feng Tian,Hua Wang,Huan Hu,Yang Xu###
(245406, 245410)
 However, theessential power conversion limitation for these devices lies in the smallopen-circuit voltage (Voc), which depends on the Schottky barrier height(SBH).
Featurization successful!
0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 20, '%', 3]

In
###Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation|Dong Pu,Muhammad Abid Anwar,Jiachao Zhou,Renwei Mao,Xin Pan,Jian Chai,Feng Tian,Hua Wang,Huan Hu,Yang Xu###
(245413, 245413)
 In this study, we introduce an electromechanical method based on theflexoelectric effect to enhance the PV efficiency in GSJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 20, '%', 2]

PV
###Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation|Dong Pu,Muhammad Abid Anwar,Jiachao Zhou,Renwei Mao,Xin Pan,Jian Chai,Feng Tian,Hua Wang,Huan Hu,Yang Xu###
(245447, 245448)
 In this study, we introduce an electromechanical method based on theflexoelectric effect to enhance the PV efficiency in GSJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 20, '%', 2]

F
###Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation|Dong Pu,Muhammad Abid Anwar,Jiachao Zhou,Renwei Mao,Xin Pan,Jian Chai,Feng Tian,Hua Wang,Huan Hu,Yang Xu###
(245470, 245470)
 By atomic forcemicroscope (AFM) tip-based indentation and in situ current measurement, thecurrent-voltage (I-V) responses under flexoelectric strain gradient areobtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 20, '%', 1]

I
###Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation|Dong Pu,Muhammad Abid Anwar,Jiachao Zhou,Renwei Mao,Xin Pan,Jian Chai,Feng Tian,Hua Wang,Huan Hu,Yang Xu###
(245499, 245499)
 By atomic forcemicroscope (AFM) tip-based indentation and in situ current measurement, thecurrent-voltage (I-V) responses under flexoelectric strain gradient areobtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 20, '%', 1]

V
###Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation|Dong Pu,Muhammad Abid Anwar,Jiachao Zhou,Renwei Mao,Xin Pan,Jian Chai,Feng Tian,Hua Wang,Huan Hu,Yang Xu###
(245501, 245501)
 By atomic forcemicroscope (AFM) tip-based indentation and in situ current measurement, thecurrent-voltage (I-V) responses under flexoelectric strain gradient areobtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 20, '%', 1]

V
###Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation|Dong Pu,Muhammad Abid Anwar,Jiachao Zhou,Renwei Mao,Xin Pan,Jian Chai,Feng Tian,Hua Wang,Huan Hu,Yang Xu###
(245522, 245522)
 The Voc is observed to increase for up to 20%, leading to anevident improvement of the power conversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 20, '%', 0]

F
###Optical Signatures of Förster-induced energy transfer in organic/TMD heterostructures|Joshua J. P. Thompson,Marina Gerhard,Gregor Witte,Ermin Malic###
(245622, 245622)
Optical Signatures of Frster-induced energy transfer in organic/TMD heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Optical Signatures of Förster-induced energy transfer in organic/TMD heterostructures|Joshua J. P. Thompson,Marina Gerhard,Gregor Witte,Ermin Malic###
(245670, 245670)
 Hybrid van der Waals heterostructures of organic semiconductors andtransition metal dichalcogenides (TMDs) are promising candidates for variousoptoelectronic devices, such as solar cells and biosensors.
EXCEPTION 3: IndexError for Ds
In
Abstract does not contain any numbers.

III
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(245995, 245997)
Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 0.3, 'V', 7],[445.0, 2012, ',', 8],[609.0, 28, '%', 9],[641.0, 30, '%', 10]

V
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(245999, 245999)
Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 0.3, 'V', 7],[443.0, 2012, ',', 8],[607.0, 28, '%', 9],[639.0, 30, '%', 10]

InAs/GaAs
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(246028, 246032)
 We report thin-film InAs/GaAs quantum dot (QD) solar cells with n-i-p+deep junction structure and planar back reflector fabricated by epitaxiallift-off (ELO) of full 3-inch wafers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[383.0, 0.3, 'V', 6],[410.0, 2012, ',', 7],[574.0, 28, '%', 8],[606.0, 30, '%', 9]

O
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(246085, 246085)
 We report thin-film InAs/GaAs quantum dot (QD) solar cells with n-i-p+deep junction structure and planar back reflector fabricated by epitaxiallift-off (ELO) of full 3-inch wafers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 0.3, 'V', 6],[357.0, 2012, ',', 7],[521.0, 28, '%', 8],[553.0, 30, '%', 9]

O
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(246129, 246129)
 External quantum efficiency measurementsdemonstrate twofold enhancement of the QD photocurrent in the ELO QD cellcompared to the wafer-based QD cell.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 0.3, 'V', 5],[313.0, 2012, ',', 6],[477.0, 28, '%', 7],[509.0, 30, '%', 8]

In
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(246153, 246153)
 In the GaAs wavelength range, the ELO QDcell perfectly preserves the current collection efficiency of the baselinesingle-junction ELO cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 0.3, 'V', 4],[289.0, 2012, ',', 5],[453.0, 28, '%', 6],[485.0, 30, '%', 7]

GaAs
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(246157, 246158)
 In the GaAs wavelength range, the ELO QDcell perfectly preserves the current collection efficiency of the baselinesingle-junction ELO cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 0.3, 'V', 4],[284.0, 2012, ',', 5],[448.0, 28, '%', 6],[480.0, 30, '%', 7]

O
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(246169, 246169)
 In the GaAs wavelength range, the ELO QDcell perfectly preserves the current collection efficiency of the baselinesingle-junction ELO cell.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 0.3, 'V', 4],[273.0, 2012, ',', 5],[437.0, 28, '%', 6],[469.0, 30, '%', 7]

O
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(246202, 246202)
 In the GaAs wavelength range, the ELO QDcell perfectly preserves the current collection efficiency of the baselinesingle-junction ELO cell.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.3, 'V', 4],[240.0, 2012, ',', 5],[404.0, 28, '%', 6],[436.0, 30, '%', 7]

O
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(246242, 246242)
 We demonstrate by full-wave optical simulations thatintegrating a micro-patterned diffraction grating in the ELO cell rearsideprovides more than tenfold enhancement of the near-infrared light harvesting byQ<missing VAR>Ds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 0.3, 'V', 3],[200.0, 2012, ',', 4],[364.0, 28, '%', 5],[396.0, 30, '%', 6]

Ds
###Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off|F Cappelluti,D Kim,M van Eerden,AP Cédola,T Aho,G Bissels,F Elsehrawy,J Wu,H Liu,P Mulder,G Bauhuis,J Schermer,T Niemi,M Guina###
(246275, 246275)
 We demonstrate by full-wave optical simulations thatintegrating a micro-patterned diffraction grating in the ELO cell rearsideprovides more than tenfold enhancement of the near-infrared light harvesting byQ<missing VAR>Ds.
EXCEPTION 3: IndexError for Ds
V
[140.0, 0.3, 'V', 3],[167.0, 2012, ',', 4],[331.0, 28, '%', 5],[363.0, 30, '%', 6]

K
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246672, 246672)
Surface and bulk effects of K in highly efficient Cu1-xKx<missing VAR>InSe2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 0.07, ',', 3],[212.0, 15.0, '%', 3],[342.0, 0, 'baseline', 5],[489.0, 14.9, '%', 8]

Cu1-xK
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246680, 246684)
Surface and bulk effects of K in highly efficient Cu1-xKx<missing VAR>InSe2 solar cells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[187.0, 0.07, ',', 3],[200.0, 15.0, '%', 3],[330.0, 0, 'baseline', 5],[477.0, 14.9, '%', 8]

InSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246686, 246688)
Surface and bulk effects of K in highly efficient Cu1-xKx<missing VAR>InSe2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 0.07, ',', 3],[196.0, 15.0, '%', 3],[326.0, 0, 'baseline', 5],[473.0, 14.9, '%', 8]

K
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246703, 246703)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 0.07, ',', 2],[181.0, 15.0, '%', 2],[311.0, 0, 'baseline', 4],[458.0, 14.9, '%', 7]

Cu
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246709, 246709)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 0.07, ',', 2],[175.0, 15.0, '%', 2],[305.0, 0, 'baseline', 4],[452.0, 14.9, '%', 7]

In
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246711, 246711)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.07, ',', 2],[173.0, 15.0, '%', 2],[303.0, 0, 'baseline', 4],[450.0, 14.9, '%', 7]

Ga
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246713, 246713)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0.07, ',', 2],[171.0, 15.0, '%', 2],[301.0, 0, 'baseline', 4],[448.0, 14.9, '%', 7]

Se
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246716, 246716)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 0.07, ',', 2],[168.0, 15.0, '%', 2],[298.0, 0, 'baseline', 4],[445.0, 14.9, '%', 7]

S
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246718, 246718)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.07, ',', 2],[166.0, 15.0, '%', 2],[296.0, 0, 'baseline', 4],[443.0, 14.9, '%', 7]

CI
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246723, 246724)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.07, ',', 2],[160.0, 15.0, '%', 2],[290.0, 0, 'baseline', 4],[437.0, 14.9, '%', 7]

S
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246726, 246726)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0.07, ',', 2],[158.0, 15.0, '%', 2],[288.0, 0, 'baseline', 4],[435.0, 14.9, '%', 7]

(PV)
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246732, 246735)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.07, ',', 2],[149.0, 15.0, '%', 2],[279.0, 0, 'baseline', 4],[426.0, 14.9, '%', 7]

Cu
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246742, 246742)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.07, ',', 2],[142.0, 15.0, '%', 2],[272.0, 0, 'baseline', 4],[419.0, 14.9, '%', 7]

K
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246744, 246744)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.07, ',', 2],[140.0, 15.0, '%', 2],[270.0, 0, 'baseline', 4],[417.0, 14.9, '%', 7]

In
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246746, 246746)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.07, ',', 2],[138.0, 15.0, '%', 2],[268.0, 0, 'baseline', 4],[415.0, 14.9, '%', 7]

Se
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246748, 246748)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0.07, ',', 2],[136.0, 15.0, '%', 2],[266.0, 0, 'baseline', 4],[413.0, 14.9, '%', 7]

PV
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246764, 246765)
 To advance knowledge of K bonding in Cu(In,Ga)(Se,S)2 (CIG<missing VAR>S) photovoltaic(PV) absorbers, recent Cu-K-In-Se phase growth studies have been extended to PVperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0.07, ',', 2],[119.0, 15.0, '%', 2],[249.0, 0, 'baseline', 4],[396.0, 14.9, '%', 7]

K
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246782, 246782)
 First, the effect of distributing K throughout bulk Cu1-xKxInSe2absorbers at low K/(K+Cu) compositions (0 < x<missing VAR> < 0.30) was studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.07, ',', 1],[102.0, 15.0, '%', 1],[232.0, 0, 'baseline', 3],[379.0, 14.9, '%', 6]

Cu1-x
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246788, 246791)
 First, the effect of distributing K throughout bulk Cu1-xKxInSe2absorbers at low K/(K+Cu) compositions (0 < x<missing VAR> < 0.30) was studied.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[80.0, 0.07, ',', 1],[93.0, 15.0, '%', 1],[223.0, 0, 'baseline', 3],[370.0, 14.9, '%', 6]

InSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246793, 246795)
 First, the effect of distributing K throughout bulk Cu1-xKxInSe2absorbers at low K/(K+Cu) compositions (0 < x<missing VAR> < 0.30) was studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.07, ',', 1],[89.0, 15.0, '%', 1],[219.0, 0, 'baseline', 3],[366.0, 14.9, '%', 6]

K
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246807, 246807)
 First, the effect of distributing K throughout bulk Cu1-xKxInSe2absorbers at low K/(K+Cu) compositions (0 < x<missing VAR> < 0.30) was studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.07, ',', 1],[77.0, 15.0, '%', 1],[207.0, 0, 'baseline', 3],[354.0, 14.9, '%', 6]

Cu
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246809, 246809)
 First, the effect of distributing K throughout bulk Cu1-xKxInSe2absorbers at low K/(K+Cu) compositions (0 < x<missing VAR> < 0.30) was studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.07, ',', 1],[75.0, 15.0, '%', 1],[205.0, 0, 'baseline', 3],[352.0, 14.9, '%', 6]

(VOC)
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246841, 246845)
Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatlyenhanced for x<missing VAR>  0.07, resulting in an officially-measured 15.0%-efficientsolar cell, matching to the world record CuInSe2 efficiency.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.07, ',', 0],[39.0, 15.0, '%', 0],[169.0, 0, 'baseline', 2],[316.0, 14.9, '%', 5]

(FF)
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246854, 246857)
Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatlyenhanced for x<missing VAR>  0.07, resulting in an officially-measured 15.0%-efficientsolar cell, matching to the world record CuInSe2 efficiency.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.07, ',', 0],[27.0, 15.0, '%', 0],[157.0, 0, 'baseline', 2],[304.0, 14.9, '%', 5]

CuInSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246905, 246908)
Efficiency, open-circuit voltage (VOC), and fill factor (FF) were greatlyenhanced for x<missing VAR>  0.07, resulting in an officially-measured 15.0%-efficientsolar cell, matching to the world record CuInSe2 efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.07, ',', 0],[21.0, 15.0, '%', 0],[106.0, 0, 'baseline', 2],[253.0, 14.9, '%', 5]

CuInSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246941, 246944)
 The improvementswere a result of reduced interface and bulk recombination, relative to CuInSe2(x<missing VAR>  0).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.07, ',', 1],[57.0, 15.0, '%', 1],[70.0, 0, 'baseline', 1],[217.0, 14.9, '%', 4]

C
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246983, 246983)
 However, higher x<missing VAR> compositions had reduced efficiency, short-circuitcurrent density (J<missing VAR>SC), and FF due to greatly increased interface recombination,relative to the x<missing VAR>  0 baseline.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 0.07, ',', 2],[99.0, 15.0, '%', 2],[31.0, 0, 'baseline', 0],[178.0, 14.9, '%', 3]

FF
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(246989, 246990)
 However, higher x<missing VAR> compositions had reduced efficiency, short-circuitcurrent density (J<missing VAR>SC), and FF due to greatly increased interface recombination,relative to the x<missing VAR>  0 baseline.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 0.07, ',', 2],[105.0, 15.0, '%', 2],[24.0, 0, 'baseline', 0],[171.0, 14.9, '%', 3]

K
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247028, 247028)
 Next, the effect of confining K at theabsorber/buffer interface at high K/(K+Cu) compositions (0.30 < x<missing VAR> < 0.92) wasresearched.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 0.07, ',', 3],[144.0, 15.0, '%', 3],[14.0, 0, 'baseline', 1],[133.0, 14.9, '%', 2]

K
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247048, 247048)
 Next, the effect of confining K at theabsorber/buffer interface at high K/(K+Cu) compositions (0.30 < x<missing VAR> < 0.92) wasresearched.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 0.07, ',', 3],[164.0, 15.0, '%', 3],[34.0, 0, 'baseline', 1],[113.0, 14.9, '%', 2]

Cu
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247050, 247050)
 Next, the effect of confining K at theabsorber/buffer interface at high K/(K+Cu) compositions (0.30 < x<missing VAR> < 0.92) wasresearched.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 0.07, ',', 3],[166.0, 15.0, '%', 3],[36.0, 0, 'baseline', 1],[111.0, 14.9, '%', 2]

CuInSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247094, 247097)
 Previous work showed that these surface layer growth conditionsproduced CuInSe2 with a large phase fraction of KInSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 0.07, ',', 4],[210.0, 15.0, '%', 4],[80.0, 0, 'baseline', 2],[64.0, 14.9, '%', 1]

KInSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247111, 247114)
 Previous work showed that these surface layer growth conditionsproduced CuInSe2 with a large phase fraction of KInSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0.07, ',', 4],[227.0, 15.0, '%', 4],[97.0, 0, 'baseline', 2],[47.0, 14.9, '%', 1]

KInSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247142, 247145)
 After optimization (75nm surface layer with x<missing VAR>  0.41), these KInSe2 surface samples exhibitedincreased efficiency (officially 14.9%), VOC, and FF as a result of decreasedinterface recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 0.07, ',', 5],[258.0, 15.0, '%', 5],[128.0, 0, 'baseline', 3],[16.0, 14.9, '%', 0]

VOC
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247166, 247168)
 After optimization (75nm surface layer with x<missing VAR>  0.41), these KInSe2 surface samples exhibitedincreased efficiency (officially 14.9%), VOC, and FF as a result of decreasedinterface recombination.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 0.07, ',', 5],[282.0, 15.0, '%', 5],[152.0, 0, 'baseline', 3],[5.0, 14.9, '%', 0]

FF
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247173, 247174)
 After optimization (75nm surface layer with x<missing VAR>  0.41), these KInSe2 surface samples exhibitedincreased efficiency (officially 14.9%), VOC, and FF as a result of decreasedinterface recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 0.07, ',', 5],[289.0, 15.0, '%', 5],[159.0, 0, 'baseline', 3],[12.0, 14.9, '%', 0]

KInSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247194, 247197)
 The KInSe2 surfaces had features similar to previousreports for KF post-deposition treatments (PD<missing VAR>Ts) used in world record CIG<missing VAR>Ssolar cells-taken as indirect evidence that KInSe2 can form during these PD<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 0.07, ',', 6],[310.0, 15.0, '%', 6],[180.0, 0, 'baseline', 4],[33.0, 14.9, '%', 1]

KF
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247216, 247217)
 The KInSe2 surfaces had features similar to previousreports for KF post-deposition treatments (PD<missing VAR>Ts) used in world record CIG<missing VAR>Ssolar cells-taken as indirect evidence that KInSe2 can form during these PD<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 0.07, ',', 6],[332.0, 15.0, '%', 6],[202.0, 0, 'baseline', 4],[55.0, 14.9, '%', 1]

P
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247226, 247226)
 The KInSe2 surfaces had features similar to previousreports for KF post-deposition treatments (PD<missing VAR>Ts) used in world record CIG<missing VAR>Ssolar cells-taken as indirect evidence that KInSe2 can form during these PD<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 0.07, ',', 6],[342.0, 15.0, '%', 6],[212.0, 0, 'baseline', 4],[65.0, 14.9, '%', 1]

CI
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247239, 247240)
 The KInSe2 surfaces had features similar to previousreports for KF post-deposition treatments (PD<missing VAR>Ts) used in world record CIG<missing VAR>Ssolar cells-taken as indirect evidence that KInSe2 can form during these PD<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 0.07, ',', 6],[355.0, 15.0, '%', 6],[225.0, 0, 'baseline', 4],[78.0, 14.9, '%', 1]

S
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247242, 247242)
 The KInSe2 surfaces had features similar to previousreports for KF post-deposition treatments (PD<missing VAR>Ts) used in world record CIG<missing VAR>Ssolar cells-taken as indirect evidence that KInSe2 can form during these PD<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 0.07, ',', 6],[358.0, 15.0, '%', 6],[228.0, 0, 'baseline', 4],[81.0, 14.9, '%', 1]

KInSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247259, 247262)
 The KInSe2 surfaces had features similar to previousreports for KF post-deposition treatments (PD<missing VAR>Ts) used in world record CIG<missing VAR>Ssolar cells-taken as indirect evidence that KInSe2 can form during these PD<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 0.07, ',', 6],[375.0, 15.0, '%', 6],[245.0, 0, 'baseline', 4],[98.0, 14.9, '%', 1]

P
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247272, 247272)
 The KInSe2 surfaces had features similar to previousreports for KF post-deposition treatments (PD<missing VAR>Ts) used in world record CIG<missing VAR>Ssolar cells-taken as indirect evidence that KInSe2 can form during these PD<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[401.0, 0.07, ',', 6],[388.0, 15.0, '%', 6],[258.0, 0, 'baseline', 4],[111.0, 14.9, '%', 1]

KInSe2
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247307, 247310)
 However, the KInSe2 surface had higher K levels near thesurface, greater lifetimes, and increased inversion near the buffer interface,relative to the champion bulk CKIS absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 0.07, ',', 8],[423.0, 15.0, '%', 8],[293.0, 0, 'baseline', 6],[146.0, 14.9, '%', 3]

K
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247318, 247318)
 However, the KInSe2 surface had higher K levels near thesurface, greater lifetimes, and increased inversion near the buffer interface,relative to the champion bulk CKIS absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[447.0, 0.07, ',', 8],[434.0, 15.0, '%', 8],[304.0, 0, 'baseline', 6],[157.0, 14.9, '%', 3]

CKIS
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247361, 247364)
 However, the KInSe2 surface had higher K levels near thesurface, greater lifetimes, and increased inversion near the buffer interface,relative to the champion bulk CKIS absorber.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[490.0, 0.07, ',', 8],[477.0, 15.0, '%', 8],[347.0, 0, 'baseline', 6],[200.0, 14.9, '%', 3]

K
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247378, 247378)
 These characteristics demonstratethat K may benefit PV performance by different mechanisms at the surface and inthe absorber bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[507.0, 0.07, ',', 9],[494.0, 15.0, '%', 9],[364.0, 0, 'baseline', 7],[217.0, 14.9, '%', 4]

PV
###Surface and bulk effects of K in highly efficient Cu$_{1-x}$K$_x$InSe$_2$ solar cells|Christopher P. Muzzillo,Jian V. Li,Lorelle M. Mansfield,Kannan Ramanathan,Timothy J. Anderson###
(247384, 247385)
 These characteristics demonstratethat K may benefit PV performance by different mechanisms at the surface and inthe absorber bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[513.0, 0.07, ',', 9],[500.0, 15.0, '%', 9],[370.0, 0, 'baseline', 7],[223.0, 14.9, '%', 4]

In
###A novel graph-based formulation for characterizing morphology with application to organic solar cells|Olga Wodo,Srikanta Tirthapura,Sumit Chaudhary,Baskar Ganapathysubramanian###
(247731, 247731)
 In this context, a comprehensive set ofcomputational tools to rapidly quantify and classify the heterogeneous internalstructure of thin films will be invaluable in linking process, structure andproperty.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Multiscale approaches to high efficiency photovoltaics|J. P. Connolly,Lejo J. Koduvelikulathu,D. Mencaraglia,Julio C. Rimada,Ahmed Nejim,G. Sanchez###
(248215, 248215)
 Some examplesof semi-empirical modelling in the field are reviewed, in particular formultispectral solar cells on silicon (french ANR<missing VAR> project MULTISOL<missing VAR>SI).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 2015, 'which', 6]

ISO
###Multiscale approaches to high efficiency photovoltaics|J. P. Connolly,Lejo J. Koduvelikulathu,D. Mencaraglia,Julio C. Rimada,Ahmed Nejim,G. Sanchez###
(248224, 248226)
 Some examplesof semi-empirical modelling in the field are reviewed, in particular formultispectral solar cells on silicon (french ANR<missing VAR> project MULTISOL<missing VAR>SI).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 2015, 'which', 6]

I
###Multiscale approaches to high efficiency photovoltaics|J. P. Connolly,Lejo J. Koduvelikulathu,D. Mencaraglia,Julio C. Rimada,Ahmed Nejim,G. Sanchez###
(248229, 248229)
 Some examplesof semi-empirical modelling in the field are reviewed, in particular formultispectral solar cells on silicon (french ANR<missing VAR> project MULTISOL<missing VAR>SI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 2015, 'which', 6]

COS
###Multiscale approaches to high efficiency photovoltaics|J. P. Connolly,Lejo J. Koduvelikulathu,D. Mencaraglia,Julio C. Rimada,Ahmed Nejim,G. Sanchez###
(248521, 248523)
 Wepresent a European COST<missing VAR> Action MultiscaleSolar kicking off in early 2015 whichbrings together experimental and theoretical partners in order to developmultiscale research in organic and inorganic materials.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2015, 'which', 0]

S
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(248686, 248686)
 Semi-transparent Solar Cells (ST<missing VAR>-SCs) has emerged as one of the mostprominent energy harvesting technology that combines the benefits of lighttransparency and light-to-electricity conversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[479.0, 550, 'nm', 6]

Cs
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(248690, 248690)
 Semi-transparent Solar Cells (ST<missing VAR>-SCs) has emerged as one of the mostprominent energy harvesting technology that combines the benefits of lighttransparency and light-to-electricity conversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[475.0, 550, 'nm', 6]

S
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(248810, 248810)
 The performance of ST<missing VAR>-SCs is mainlydetermined by the trade-off between the competing parameters of the capabilityto convert the incident light into electricity while allowing some parts totransmit providing transparency through the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 550, 'nm', 4]

SCs
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(248813, 248814)
 The performance of ST<missing VAR>-SCs is mainlydetermined by the trade-off between the competing parameters of the capabilityto convert the incident light into electricity while allowing some parts totransmit providing transparency through the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 550, 'nm', 4]

S
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(248902, 248902)
 Depending on the targetapplication, the selection of ST<missing VAR>-SCs is a tricky affair as some devices mightoffer high efficiency but compromises transparency and vice-versa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 550, 'nm', 3]

SCs
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(248905, 248906)
 Depending on the targetapplication, the selection of ST<missing VAR>-SCs is a tricky affair as some devices mightoffer high efficiency but compromises transparency and vice-versa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 550, 'nm', 3]

S
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(249044, 249044)
 So, in order to quantify the performance of ST<missing VAR>-SCs, we proposed, afigure-of-merit (FoM) which can be used as a tool that can help in analysingand comparing the performance among various ST<missing VAR>-SCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 550, 'nm', 1]

SCs
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(249047, 249048)
 So, in order to quantify the performance of ST<missing VAR>-SCs, we proposed, afigure-of-merit (FoM) which can be used as a tool that can help in analysingand comparing the performance among various ST<missing VAR>-SCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 550, 'nm', 1]

S
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(249107, 249107)
 So, in order to quantify the performance of ST<missing VAR>-SCs, we proposed, afigure-of-merit (FoM) which can be used as a tool that can help in analysingand comparing the performance among various ST<missing VAR>-SCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 550, 'nm', 1]

SCs
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(249110, 249111)
 So, in order to quantify the performance of ST<missing VAR>-SCs, we proposed, afigure-of-merit (FoM) which can be used as a tool that can help in analysingand comparing the performance among various ST<missing VAR>-SCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 550, 'nm', 1]

S
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(249300, 249300)
 Theproposed FoM<missing VAR> shall serve as a meaningful guiding path to the researchers forthe development of advanced ST<missing VAR>-SCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 550, 'nm', 3]

SCs
###Figure-of-merit for Semi-transparent Solar Cells|Arun Kumar,Sonia Rani,Dhriti Sundar Ghosh###
(249303, 249304)
 Theproposed FoM<missing VAR> shall serve as a meaningful guiding path to the researchers forthe development of advanced ST<missing VAR>-SCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 550, 'nm', 3]

Sn/Ge
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249315, 249317)
Sn/Ge substitution in ((Ctextrmn<missing VAR>H2textrmn<missing VAR>-1NH3)2PbI4; n<missing VAR>3) An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[34.0, 2, 'D', 0],[91.0, 2, 'D', 2],[619.0, 2, 'D', 13]

C
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249325, 249325)
Sn/Ge substitution in ((Ctextrmn<missing VAR>H2textrmn<missing VAR>-1NH3)2PbI4; n<missing VAR>3) An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2, 'D', 0],[83.0, 2, 'D', 2],[611.0, 2, 'D', 13]

H2
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249328, 249329)
Sn/Ge substitution in ((Ctextrmn<missing VAR>H2textrmn<missing VAR>-1NH3)2PbI4; n<missing VAR>3) An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'D', 0],[79.0, 2, 'D', 2],[607.0, 2, 'D', 13]

H3
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249335, 249336)
Sn/Ge substitution in ((Ctextrmn<missing VAR>H2textrmn<missing VAR>-1NH3)2PbI4; n<missing VAR>3) An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 0],[72.0, 2, 'D', 2],[600.0, 2, 'D', 13]

PbI4
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249339, 249341)
Sn/Ge substitution in ((Ctextrmn<missing VAR>H2textrmn<missing VAR>-1NH3)2PbI4; n<missing VAR>3) An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'D', 0],[67.0, 2, 'D', 2],[595.0, 2, 'D', 13]

(IO)
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249466, 249469)
 Here we present a low-dimensional naturallyself-assembled inorganic-organic (IO) hybrid systems based on primary cyclicammonium-based (Ctextrmn<missing VAR>H2textrmn<missing VAR>-1NH3) semiconductorseries [viz.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, 'D', 3],[58.0, 2, 'D', 1],[467.0, 2, 'D', 10]

C
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249489, 249489)
 Here we present a low-dimensional naturallyself-assembled inorganic-organic (IO) hybrid systems based on primary cyclicammonium-based (Ctextrmn<missing VAR>H2textrmn<missing VAR>-1NH3) semiconductorseries [viz.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 2, 'D', 3],[81.0, 2, 'D', 1],[447.0, 2, 'D', 10]

H2
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249492, 249493)
 Here we present a low-dimensional naturallyself-assembled inorganic-organic (IO) hybrid systems based on primary cyclicammonium-based (Ctextrmn<missing VAR>H2textrmn<missing VAR>-1NH3) semiconductorseries [viz.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, 'D', 3],[84.0, 2, 'D', 1],[443.0, 2, 'D', 10]

H3
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249499, 249500)
 Here we present a low-dimensional naturallyself-assembled inorganic-organic (IO) hybrid systems based on primary cyclicammonium-based (Ctextrmn<missing VAR>H2textrmn<missing VAR>-1NH3) semiconductorseries [viz.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'D', 3],[91.0, 2, 'D', 1],[436.0, 2, 'D', 10]

C
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249514, 249514)
 ((Ctextrmn<missing VAR>H2textrmn<missing VAR>-1 NH3)2PbI4; n<missing VAR>3-6)].
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2, 'D', 4],[106.0, 2, 'D', 2],[422.0, 2, 'D', 9]

H2
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249517, 249518)
 ((Ctextrmn<missing VAR>H2textrmn<missing VAR>-1 NH3)2PbI4; n<missing VAR>3-6)].
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 2, 'D', 4],[109.0, 2, 'D', 2],[418.0, 2, 'D', 9]

H3
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249525, 249526)
 ((Ctextrmn<missing VAR>H2textrmn<missing VAR>-1 NH3)2PbI4; n<missing VAR>3-6)].
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 2, 'D', 4],[117.0, 2, 'D', 2],[410.0, 2, 'D', 9]

PbI4
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249529, 249531)
 ((Ctextrmn<missing VAR>H2textrmn<missing VAR>-1 NH3)2PbI4; n<missing VAR>3-6)].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2, 'D', 4],[121.0, 2, 'D', 2],[405.0, 2, 'D', 9]

(Pb)
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249568, 249570)
However, the wide bandgap nature and presence of toxicity due to lead (Pb)prohibit their applications.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 2, 'D', 5],[160.0, 2, 'D', 3],[366.0, 2, 'D', 8]

Ge/Sn
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249603, 249605)
 Therefore, in the present work, we study the roleof Ge/Sn substitution and Pb-vacancy (Pb-boxtimes) to reduce concentrationof Pb and to enhance solar cell efficiency by the formation of mixed perovskitestructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[252.0, 2, 'D', 6],[195.0, 2, 'D', 4],[331.0, 2, 'D', 7]

Pb
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249611, 249611)
 Therefore, in the present work, we study the roleof Ge/Sn substitution and Pb-vacancy (Pb-boxtimes) to reduce concentrationof Pb and to enhance solar cell efficiency by the formation of mixed perovskitestructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 2, 'D', 6],[203.0, 2, 'D', 4],[325.0, 2, 'D', 7]

Pb
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249616, 249616)
 Therefore, in the present work, we study the roleof Ge/Sn substitution and Pb-vacancy (Pb-boxtimes) to reduce concentrationof Pb and to enhance solar cell efficiency by the formation of mixed perovskitestructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 2, 'D', 6],[208.0, 2, 'D', 4],[320.0, 2, 'D', 7]

Pb
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249630, 249630)
 Therefore, in the present work, we study the roleof Ge/Sn substitution and Pb-vacancy (Pb-boxtimes) to reduce concentrationof Pb and to enhance solar cell efficiency by the formation of mixed perovskitestructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 2, 'D', 6],[222.0, 2, 'D', 4],[306.0, 2, 'D', 7]

(SOC)
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249678, 249682)
 We have discussed the effect of spin-orbit coupling (SOC) usingstate-of-the-art hybrid density functional theory (DFT).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 2, 'D', 7],[270.0, 2, 'D', 5],[254.0, 2, 'D', 6]

Pb
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249723, 249723)
 We find the mixedconformers with Pb-boxtimes do not possess structural stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 2, 'D', 8],[315.0, 2, 'D', 6],[213.0, 2, 'D', 5]

Sn
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249818, 249818)
 Our resultsinfer that Sn substitution is more favorable than that of Ge in replacing Pband enhancing the efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[467.0, 2, 'D', 11],[410.0, 2, 'D', 9],[118.0, 2, 'D', 2]

Ge
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249834, 249834)
 Our resultsinfer that Sn substitution is more favorable than that of Ge in replacing Pband enhancing the efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[483.0, 2, 'D', 11],[426.0, 2, 'D', 9],[102.0, 2, 'D', 2]

Pb
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249840, 249840)
 Our resultsinfer that Sn substitution is more favorable than that of Ge in replacing Pband enhancing the efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[489.0, 2, 'D', 11],[432.0, 2, 'D', 9],[96.0, 2, 'D', 2]

S
###Sn/Ge substitution in ((C$_\textrm{n}$H$_{2\textrm{n}-1}$NH$_3$)$_2$PbI$_4$; n=3): An emerging 2D layered hybrid perovskites with enhanced optoelectronic properties$^†$|Deepika Gill,Gunjana Yadav,Saswata Bhattacharya###
(249928, 249928)
 From computed spectroscopic limited maximum efficiency (SLME), these 2Dperovskites show enough promise as alternatives to conventional lead halideperovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[577.0, 2, 'D', 13],[520.0, 2, 'D', 11],[8.0, 2, 'D', 0]

Pb
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(249994, 249994)
Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX<missing VAR>3 family of phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(250012, 250012)
 Metal halide perovskites APbX<missing VAR>3 (A+  FA+ (formamidinium), M<missing VAR>A+(methylammonium) or Cs+, X<missing VAR>-  I-, Br-) are considered as prominent innovativecomponents in nowadays perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(250021, 250021)
 Metal halide perovskites APbX<missing VAR>3 (A+  FA+ (formamidinium), M<missing VAR>A+(methylammonium) or Cs+, X<missing VAR>-  I-, Br-) are considered as prominent innovativecomponents in nowadays perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(250041, 250041)
 Metal halide perovskites APbX<missing VAR>3 (A+  FA+ (formamidinium), M<missing VAR>A+(methylammonium) or Cs+, X<missing VAR>-  I-, Br-) are considered as prominent innovativecomponents in nowadays perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(250049, 250049)
 Metal halide perovskites APbX<missing VAR>3 (A+  FA+ (formamidinium), M<missing VAR>A+(methylammonium) or Cs+, X<missing VAR>-  I-, Br-) are considered as prominent innovativecomponents in nowadays perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(250053, 250053)
 Metal halide perovskites APbX<missing VAR>3 (A+  FA+ (formamidinium), M<missing VAR>A+(methylammonium) or Cs+, X<missing VAR>-  I-, Br-) are considered as prominent innovativecomponents in nowadays perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(250144, 250144)
 Crystallization of thesematerials is often complicated by the formation of various phases with the samestoichiometry but structural types deviating from perovskites such aswell-known the hexagonal delta FAPbI3 polytype.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(250146, 250148)
 Crystallization of thesematerials is often complicated by the formation of various phases with the samestoichiometry but structural types deviating from perovskites such aswell-known the hexagonal delta FAPbI3 polytype.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(250292, 250292)
 In this work, we predicted and described all possiblehexagonal polytypes of hybrid lead halides with the APbI3 composition using thegroup theory approach, also we analyzed theoretically the relationship betweenthe configuration of close-packed layers in polytypes and their band gap usingDFT calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Structure-related bandgap of hybrid lead halide perovskites and close-packed APbX3 family of phases|Ekaterina I. Marchenko,Sergey A. Fateev,Vadim V. Korolev,Vladimir Buchinskii,Eremin N. N.,Eugene A. Goodilin,Alexey B. Tarasov###
(250329, 250331)
 In this work, we predicted and described all possiblehexagonal polytypes of hybrid lead halides with the APbI3 composition using thegroup theory approach, also we analyzed theoretically the relationship betweenthe configuration of close-packed layers in polytypes and their band gap usingDFT calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs|D. Alexiev,D. A. Prokopovich,L. Mo###
(250646, 250647)
Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs|D. Alexiev,D. A. Prokopovich,L. Mo###
(250837, 250838)
 The GaAs material was grownby liquid phase epitaxy (LPE) at the Australian Nuclear Science and TechnologyOrganisation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs|D. Alexiev,D. A. Prokopovich,L. Mo###
(250906, 250907)
 The diffusion lengths measured for high purity ptype and n<missing VAR>-typeLPE-GaAs samples were observed to be longer than any previously reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs|D. Alexiev,D. A. Prokopovich,L. Mo###
(250955, 250956)
Measurements of minority carrier diffusion lengths for p<missing VAR>-type and n<missing VAR>-type GaAswere carried out using an electron beam induced current (E<missing VAR>BIC) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Minority Carrier Diffusion Lengths for High Purity Liquid Phase Epitaxial GaAs|D. Alexiev,D. A. Prokopovich,L. Mo###
(250981, 250981)
Measurements of minority carrier diffusion lengths for p<missing VAR>-type and n<missing VAR>-type GaAswere carried out using an electron beam induced current (E<missing VAR>BIC) technique.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SB
###Mirrored strain-balanced quantum well concentrator cells in the radiative limit|J. P. Connolly,M. F. Führer,D. C. Johnson,I. M. Ballard,K. W. J. Barnham,M. Mazzer,T. N. D Tibbits,J. S. Roberts,G. Hill,C. Calder###
(251031, 251032)
 Strain-balanced Quantum Well Solar Cells (SB- Q<missing VAR>WSCs) are radiativelydominated at concentrator current levels.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Mirrored strain-balanced quantum well concentrator cells in the radiative limit|J. P. Connolly,M. F. Führer,D. C. Johnson,I. M. Ballard,K. W. J. Barnham,M. Mazzer,T. N. D Tibbits,J. S. Roberts,G. Hill,C. Calder###
(251038, 251038)
 Strain-balanced Quantum Well Solar Cells (SB- Q<missing VAR>WSCs) are radiativelydominated at concentrator current levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BH
###Recombination in polymer-fullerene bulk heterojunction solar cells|Sarah R. Cowan,Anshuman Roy,Alan J. Heeger###
(251340, 251341)
 Recombination of photogenerated charge carriers in polymer bulkheterojunction (BHJ) solar cells reduces the short circuit current (Jsc) andthe fill factor (FF).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 0.3, 'V', 3]

(FF)
###Recombination in polymer-fullerene bulk heterojunction solar cells|Sarah R. Cowan,Anshuman Roy,Alan J. Heeger###
(251372, 251375)
 Recombination of photogenerated charge carriers in polymer bulkheterojunction (BHJ) solar cells reduces the short circuit current (Jsc) andthe fill factor (FF).
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.3, 'V', 3]

BH
###Recombination in polymer-fullerene bulk heterojunction solar cells|Sarah R. Cowan,Anshuman Roy,Alan J. Heeger###
(251433, 251434)
 Lightintensity and temperature dependent current-voltage measurements on polymer BHJ<missing VAR>cells made from a variety of different semiconducting polymers and fullerenesshow that the recombination kinetics are voltage dependent and evolve fromfirst order recombination at short circuit to bimolecular recombination at opencircuit as a result of increasing the voltage-dependent charge carrier densityin the cell.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.3, 'V', 1]

BC
###Thickness dependences of photoelectric characteristics of silicon backside contact solar cells|A. P. Gorban,V. P. Kostylyov,A. V. Sachenko,O. A. Serba,I. O. Sokolovskyi,V. V. Chernenko###
(252034, 252035)
 The thickness dependences of the photocurrent quantum yield and photoenergyparameters of silicon backside contact solar cells (BC SC) are investigatedtheoretically and experimentally.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Thickness dependences of photoelectric characteristics of silicon backside contact solar cells|A. P. Gorban,V. P. Kostylyov,A. V. Sachenko,O. A. Serba,I. O. Sokolovskyi,V. V. Chernenko###
(252038, 252038)
 The thickness dependences of the photocurrent quantum yield and photoenergyparameters of silicon backside contact solar cells (BC SC) are investigatedtheoretically and experimentally.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BC
###Thickness dependences of photoelectric characteristics of silicon backside contact solar cells|A. P. Gorban,V. P. Kostylyov,A. V. Sachenko,O. A. Serba,I. O. Sokolovskyi,V. V. Chernenko###
(252186, 252187)
 Theperformed studies allowed us to establish that the thinning of the BC SCsamples in the case of minimizing the surface recombination rate gives apossibility to achieve rather high efficiencies of photoconversion.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Thickness dependences of photoelectric characteristics of silicon backside contact solar cells|A. P. Gorban,V. P. Kostylyov,A. V. Sachenko,O. A. Serba,I. O. Sokolovskyi,V. V. Chernenko###
(252189, 252190)
 Theperformed studies allowed us to establish that the thinning of the BC SCsamples in the case of minimizing the surface recombination rate gives apossibility to achieve rather high efficiencies of photoconversion.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252329, 252329)
Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 1.48, 'eV', 3]

In
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252331, 252331)
Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 1.48, 'eV', 3]

Ga
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252333, 252333)
Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 1.48, 'eV', 3]

Se2
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252335, 252336)
Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 1.48, 'eV', 3]

Cu
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252388, 252388)
 Electronic structure calculations within screened-exchange hybrid densityfunctional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 arelocalized hole traps, which can be attributed to the experimentally observed N2level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1.48, 'eV', 2]

In
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252390, 252390)
 Electronic structure calculations within screened-exchange hybrid densityfunctional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 arelocalized hole traps, which can be attributed to the experimentally observed N2level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1.48, 'eV', 2]

Ga
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252392, 252392)
 Electronic structure calculations within screened-exchange hybrid densityfunctional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 arelocalized hole traps, which can be attributed to the experimentally observed N2level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 1.48, 'eV', 2]

CuInSe2
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252401, 252404)
 Electronic structure calculations within screened-exchange hybrid densityfunctional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 arelocalized hole traps, which can be attributed to the experimentally observed N2level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 1.48, 'eV', 2]

CuGaSe2
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252408, 252411)
 Electronic structure calculations within screened-exchange hybrid densityfunctional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 arelocalized hole traps, which can be attributed to the experimentally observed N2level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1.48, 'eV', 2]

N2
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252439, 252440)
 Electronic structure calculations within screened-exchange hybrid densityfunctional theory show that Cu(In,Ga) antisites in both CuInSe2 and CuGaSe2 arelocalized hole traps, which can be attributed to the experimentally observed N2level.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1.48, 'eV', 2]

In
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252446, 252446)
 In contrast, GaCu antisites and their defect complexes with coppervacancies exhibit an electron trap level, which can limit the open-circuitvoltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 1.48, 'eV', 1]

GaCu
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252451, 252452)
 In contrast, GaCu antisites and their defect complexes with coppervacancies exhibit an electron trap level, which can limit the open-circuitvoltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1.48, 'eV', 1]

Ga
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252503, 252503)
 In contrast, GaCu antisites and their defect complexes with coppervacancies exhibit an electron trap level, which can limit the open-circuitvoltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1.48, 'eV', 1]

Cu
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252507, 252507)
 In contrast, GaCu antisites and their defect complexes with coppervacancies exhibit an electron trap level, which can limit the open-circuitvoltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.48, 'eV', 1]

In
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252509, 252509)
 In contrast, GaCu antisites and their defect complexes with coppervacancies exhibit an electron trap level, which can limit the open-circuitvoltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1.48, 'eV', 1]

Ga
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252511, 252511)
 In contrast, GaCu antisites and their defect complexes with coppervacancies exhibit an electron trap level, which can limit the open-circuitvoltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1.48, 'eV', 1]

Se2
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252513, 252514)
 In contrast, GaCu antisites and their defect complexes with coppervacancies exhibit an electron trap level, which can limit the open-circuitvoltage and efficiency in Ga-rich Cu(In,Ga)Se2 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1.48, 'eV', 1]

CuGaSe2
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252530, 252533)
 Low-temperaturephotoluminescence measurements in CuGaSe2 thin-film solar cells show afree-to-bound transition at an energy of 1.48 eV, in very good agreement withthe calculated transition energy for the GaCu antisite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1.48, 'eV', 0]

GaCu
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252589, 252590)
 Low-temperaturephotoluminescence measurements in CuGaSe2 thin-film solar cells show afree-to-bound transition at an energy of 1.48 eV, in very good agreement withthe calculated transition energy for the GaCu antisite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.48, 'eV', 0]

CuInSe2
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252629, 252632)
 Since the intrinsic DXcenter does not exhibit a pinning level within the band gap of CuInSe2,metastable DX behaviour can only be expected for GaCu antisites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1.48, 'eV', 1]

GaCu
###Antisite traps and metastable defects in Cu(In,Ga)Se2 thin-film solar cells studied by screened-exchange hybrid density functional theory|Johan Pohl,Thomas Unold,Karsten Albe###
(252653, 252654)
 Since the intrinsic DXcenter does not exhibit a pinning level within the band gap of CuInSe2,metastable DX behaviour can only be expected for GaCu antisites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 1.48, 'eV', 1]

ZnO/GaN
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252683, 252687)
Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[253.0, 2.608, 'eV', 4]

Ga1-x
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252695, 252698)
Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[242.0, 2.608, 'eV', 4]

N1-x
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252702, 252705)
Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[235.0, 2.608, 'eV', 4]

GaN
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252709, 252710)
Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 2.608, 'eV', 4]

ZnO/GaN
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252723, 252727)
 The band alignment in ZnO/GaN and related heterostructures are crucial forthe uses in solar harvesting technology.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[213.0, 2.608, 'eV', 3]

ZnO/GaN
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252787, 252791)
 Here, we report our density functionalcalculations of the band alignment and optical properties of ZnO/GaN andZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures using a Heyd-Scuseria-Ernzerhof(HSE) hybrid functional.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[149.0, 2.608, 'eV', 2]

Ga1-x
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252800, 252803)
 Here, we report our density functionalcalculations of the band alignment and optical properties of ZnO/GaN andZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures using a Heyd-Scuseria-Ernzerhof(HSE) hybrid functional.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[137.0, 2.608, 'eV', 2]

N1-x
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252807, 252810)
 Here, we report our density functionalcalculations of the band alignment and optical properties of ZnO/GaN andZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures using a Heyd-Scuseria-Ernzerhof(HSE) hybrid functional.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[130.0, 2.608, 'eV', 2]

GaN
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252814, 252815)
 Here, we report our density functionalcalculations of the band alignment and optical properties of ZnO/GaN andZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures using a Heyd-Scuseria-Ernzerhof(HSE) hybrid functional.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2.608, 'eV', 2]

HS
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252831, 252832)
 Here, we report our density functionalcalculations of the band alignment and optical properties of ZnO/GaN andZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures using a Heyd-Scuseria-Ernzerhof(HSE) hybrid functional.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2.608, 'eV', 2]

Ga1-x
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252909, 252912)
 Using the hybrid functional calculations, we show that the(Ga1-xZnx)(N1-xOx) solid solution has a direct band gap of about 2.608 eV, ingood agreement with the experimental data.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[28.0, 2.608, 'eV', 0]

N1-x
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252916, 252919)
 Using the hybrid functional calculations, we show that the(Ga1-xZnx)(N1-xOx) solid solution has a direct band gap of about 2.608 eV, ingood agreement with the experimental data.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[21.0, 2.608, 'eV', 0]

II
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252975, 252976)
 More importantly, this solidsolution forms type-II band alignment with the host materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2.608, 'eV', 1]

Ga1-x
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(252998, 253001)
 AGaN/(Ga1-xZnx)(N1-xOx)/ZnO core-shell solar cell model is presented to improvethe visible light adsorption ability and carrier collection efficiency.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[58.0, 2.608, 'eV', 2]

N1-x
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(253005, 253008)
 AGaN/(Ga1-xZnx)(N1-xOx)/ZnO core-shell solar cell model is presented to improvethe visible light adsorption ability and carrier collection efficiency.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[65.0, 2.608, 'eV', 2]

ZnO
###Hybrid density functional study of band alignment in ZnO/GaN and ZnO/(Ga1-xZnx)(N1-xOx)/GaN heterostructures|Zhenhai Wang,Mingwen Zhao,Xiaopeng Wang,Yan Xi,Xiujie He,Xiangdong Liu,Shishen Yan###
(253012, 253013)
 AGaN/(Ga1-xZnx)(N1-xOx)/ZnO core-shell solar cell model is presented to improvethe visible light adsorption ability and carrier collection efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2.608, 'eV', 2]

W
###Many-body Green's function study of coumarins for dye-sensitized solar cells|C. Faber,I. Duchemin,T. Deutsch,X. Blase###
(253105, 253105)
 We study within the many-body Greens<missing VAR> function G<missing VAR>W and Bethe-Salpeterformalisms the excitation energies of several coumarin dyes proposed as anefficient alternative to ruthenium complexes for dye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Many-body Green's function study of coumarins for dye-sensitized solar cells|C. Faber,I. Duchemin,T. Deutsch,X. Blase###
(253212, 253212)
 We show that combining G<missing VAR>W and Bethe-Salpeter calculations leads tocharge-transfer excitation energies and oscillator strengths in excellentagreement with reference range-separated functional studies or coupled-clustercalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Microscopic theory of singlet exciton fission. I. General formulation|Timothy C. Berkelbach,Mark S. Hybertsen,David R. Reichman###
(253385, 253385)
 I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Microscopic theory of singlet exciton fission. I. General formulation|Timothy C. Berkelbach,Mark S. Hybertsen,David R. Reichman###
(253501, 253501)
 In this work, we assemble thecomponents of a comprehensive microscopic theory of singlet fission thatconnects excited state quantum chemistry calculations with finite-temperaturequantum relaxation theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSCs)
###Effect of electrode geometry on photovoltaic performance of polymer solar cells|Meng Li,Heng Ma,Zhaokui Wang,Chuankun Wang,Yurong Jiang,Ning Liu###
(253801, 253805)
 This paper investigates the impact of electrode geometry on the performanceof polymer solar cells (PSCs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Effect of electrode geometry on photovoltaic performance of polymer solar cells|Meng Li,Heng Ma,Zhaokui Wang,Chuankun Wang,Yurong Jiang,Ning Liu###
(253896, 253898)
 Four types of negative electrodes with equalarea (0.09 cm2) but different shape (round, oval, square, and triangular) areevaluated with respect to short-circuit current density, open-circuit voltage,fill factor, and power conversion efficiency of PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Effect of electrode geometry on photovoltaic performance of polymer solar cells|Meng Li,Heng Ma,Zhaokui Wang,Chuankun Wang,Yurong Jiang,Ning Liu###
(253967, 253968)
Maximum almost twice increase in PCE<missing VAR> with round electrode is obtained in thedevices compared with that of the triangular electrode.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Effect of electrode geometry on photovoltaic performance of polymer solar cells|Meng Li,Heng Ma,Zhaokui Wang,Chuankun Wang,Yurong Jiang,Ning Liu###
(254003, 254003)
 As a conclusion, theelectrode boundary curvature has a strong influence on the performance of PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Effect of electrode geometry on photovoltaic performance of polymer solar cells|Meng Li,Heng Ma,Zhaokui Wang,Chuankun Wang,Yurong Jiang,Ning Liu###
(254035, 254037)
 As a conclusion, theelectrode boundary curvature has a strong influence on the performance of PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSC
###Effect of electrode geometry on photovoltaic performance of polymer solar cells|Meng Li,Heng Ma,Zhaokui Wang,Chuankun Wang,Yurong Jiang,Ning Liu###
(254087, 254089)
 the sharper electrodes edge, maybe is a negativeeffector on exciton separation and carrier transport in PSC system.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N3
###Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate|Andrew J. Gibson,Robert H. Temperton,Karsten Handrup,Matthew Weston,Louise C. Mayor,James N. O'Shea###
(254155, 254156)
 The interaction of the dye molecule N3(cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4-dicarboxylato)-ruthenium(II))with the ultra-thin oxide layer on a AlNi(110) substrate, has been studiedusing synchrotron radiation based photoelectron spectroscopy, resonantphotoemission spectroscopy (RPES) and near edge X<missing VAR>-ray absorption fine structurespectroscopy (NEXAFS).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, ',', 0],[17.0, -4, ',', 0]

(II)
###Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate|Andrew J. Gibson,Robert H. Temperton,Karsten Handrup,Matthew Weston,Louise C. Mayor,James N. O'Shea###
(254182, 254185)
 The interaction of the dye molecule N3(cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4-dicarboxylato)-ruthenium(II))with the ultra-thin oxide layer on a AlNi(110) substrate, has been studiedusing synchrotron radiation based photoelectron spectroscopy, resonantphotoemission spectroscopy (RPES) and near edge X<missing VAR>-ray absorption fine structurespectroscopy (NEXAFS).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, ',', 0],[9.0, -4, ',', 0]

S
###Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate|Andrew J. Gibson,Robert H. Temperton,Karsten Handrup,Matthew Weston,Louise C. Mayor,James N. O'Shea###
(254245, 254245)
 The interaction of the dye molecule N3(cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4-dicarboxylato)-ruthenium(II))with the ultra-thin oxide layer on a AlNi(110) substrate, has been studiedusing synchrotron radiation based photoelectron spectroscopy, resonantphotoemission spectroscopy (RPES) and near edge X<missing VAR>-ray absorption fine structurespectroscopy (NEXAFS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 2, ',', 0],[72.0, -4, ',', 0]

N
###Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate|Andrew J. Gibson,Robert H. Temperton,Karsten Handrup,Matthew Weston,Louise C. Mayor,James N. O'Shea###
(254268, 254268)
 The interaction of the dye molecule N3(cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4-dicarboxylato)-ruthenium(II))with the ultra-thin oxide layer on a AlNi(110) substrate, has been studiedusing synchrotron radiation based photoelectron spectroscopy, resonantphotoemission spectroscopy (RPES) and near edge X<missing VAR>-ray absorption fine structurespectroscopy (NEXAFS).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, ',', 0],[95.0, -4, ',', 0]

S
###Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate|Andrew J. Gibson,Robert H. Temperton,Karsten Handrup,Matthew Weston,Louise C. Mayor,James N. O'Shea###
(254273, 254273)
 The interaction of the dye molecule N3(cis-bis(isothiocyanato)bis(2,2-bipyridyl-4,4-dicarboxylato)-ruthenium(II))with the ultra-thin oxide layer on a AlNi(110) substrate, has been studiedusing synchrotron radiation based photoelectron spectroscopy, resonantphotoemission spectroscopy (RPES) and near edge X<missing VAR>-ray absorption fine structurespectroscopy (NEXAFS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, ',', 0],[100.0, -4, ',', 0]

O
###Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate|Andrew J. Gibson,Robert H. Temperton,Karsten Handrup,Matthew Weston,Louise C. Mayor,James N. O'Shea###
(254393, 254393)
 Thischarge transfer mechanism is possible from the LUMO+23 in the excited statebut not from the LUMO, therefore enabling core-hole clock analysis, which givesan upper limit of 6.0pm2.5fs for the transfer time.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 2, ',', 2],[220.0, -4, ',', 2]

O
###Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate|Andrew J. Gibson,Robert H. Temperton,Karsten Handrup,Matthew Weston,Louise C. Mayor,James N. O'Shea###
(254418, 254418)
 Thischarge transfer mechanism is possible from the LUMO+23 in the excited statebut not from the LUMO, therefore enabling core-hole clock analysis, which givesan upper limit of 6.0pm2.5fs for the transfer time.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 2, ',', 2],[245.0, -4, ',', 2]

C
###Charge transfer from an adsorbed ruthenium-based photosensitizer through an ultra-thin aluminium oxide layer and into a metallic substrate|Andrew J. Gibson,Robert H. Temperton,Karsten Handrup,Matthew Weston,Louise C. Mayor,James N. O'Shea###
(254503, 254503)
 This indicates thatultra-thin oxide layers are a viable material for use in dye-sensitized solarcells (D<missing VAR>SSC), which may lead to reduced recombination effects and improvedefficiencies of future devices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 2, ',', 3],[330.0, -4, ',', 3]

(GaAs)
###Plasmonic Light Trapping in an Ultrathin Photovoltaic Layer with Film-Coupled Metamaterial Structures|Hao Wang,Liping Wang###
(254616, 254619)
 A film-coupled metamaterial structure is numerically investigated forenhancing the light absorption in an ultrathin photovoltaic layer ofcrystalline gallium arsenide (GaAs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Plasmonic Light Trapping in an Ultrathin Photovoltaic Layer with Film-Coupled Metamaterial Structures|Hao Wang,Liping Wang###
(254781, 254782)
 The energy absorbed by the active layer is greatly enhanced in thefilm-coupled metamaterial structure, resulting in significant enhancement onthe short-circuit current density by three times over a free-standing GaAslayer at the same thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Impact of nanostructure configuration on the photovoltaic performance of quantum dot arrays|Aude Berbezier,Urs Aeberhard###
(254867, 254867)
 In this work, a mesoscopic model based on the non-equilibrium Greens<missing VAR>function formalism for a tight-binding-like effective Hamiltonian is used toinvestigate a selectively contacted quantum dot array designed for operation asa single junction quantum dot solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Impact of nanostructure configuration on the photovoltaic performance of quantum dot arrays|Aude Berbezier,Urs Aeberhard###
(255146, 255146)
 In the low carrierlifetime regime, where recombination competes with carrier extraction, theextraction efficiency shows a critical dependence on the dot-contact coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HPC
###Domain Decomposition for Heterojunction Problems in Semiconductors|Timothy Costa,David Foster,Malgorzata Peszynska###
(255444, 255446)
 Our full domain decomposition approach extends ourprevious work for the potential equation only, and we present perspectives onits HPC implementation.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Modeling of dual-metal Schottky contacts based silicon micro and nano wire solar cells|M. Golam Rabbani,Amit Verma,Michael M. Adachi,Jency P. Sundararajan,Mahmoud M. Khader,Reza Nekovei,M. P. Anantram###
(255753, 255753)
 As wirelength increases, both short circuit current and open circuit voltage increasebefore saturation occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuSbSe2
###CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev###
(255949, 255952)
CuSbSe2 photovoltaic devices with 3% efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, '%', 0],[181.0, 1.1, 'eV', 4],[203.0, 0.3, 'eV', 4],[236.0, 3, '%', 5],[248.0, 20, 'mA', 5],[251.0, 2, ',', 5],[258.0, 0.44, ',', 5],[264.0, 0.35, 'V', 5]

(PV)
###CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev###
(256003, 256006)
 Recent technical and commercial successes of existing thin film solar celltechnologies motivates exploration of next-generation photovoltaic (PV)absorber materials.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3, '%', 1],[127.0, 1.1, 'eV', 3],[149.0, 0.3, 'eV', 3],[182.0, 3, '%', 4],[194.0, 20, 'mA', 4],[197.0, 2, ',', 4],[204.0, 0.44, ',', 4],[210.0, 0.35, 'V', 4]

CuSbSe2
###CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev###
(256029, 256032)
 Of particular scientific interest are compounds likeCuSbSe2, which do not have the conventional tetrahedral semiconductorbonding.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3, '%', 2],[101.0, 1.1, 'eV', 2],[123.0, 0.3, 'eV', 2],[156.0, 3, '%', 3],[168.0, 20, 'mA', 3],[171.0, 2, ',', 3],[178.0, 0.44, ',', 3],[184.0, 0.35, 'V', 3]

CuSbSe2
###CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev###
(256069, 256072)
 Here, we demonstrate 1.5 mum<missing VAR> thick CuSbSe2 PV prototypesprepared at 380-410degC by a self-regulated sputtering process using theconventional substrate device architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 3, '%', 3],[61.0, 1.1, 'eV', 1],[83.0, 0.3, 'eV', 1],[116.0, 3, '%', 2],[128.0, 20, 'mA', 2],[131.0, 2, ',', 2],[138.0, 0.44, ',', 2],[144.0, 0.35, 'V', 2]

PV
###CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev###
(256074, 256075)
 Here, we demonstrate 1.5 mum<missing VAR> thick CuSbSe2 PV prototypesprepared at 380-410degC by a self-regulated sputtering process using theconventional substrate device architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 3, '%', 3],[58.0, 1.1, 'eV', 1],[80.0, 0.3, 'eV', 1],[113.0, 3, '%', 2],[125.0, 20, 'mA', 2],[128.0, 2, ',', 2],[135.0, 0.44, ',', 2],[141.0, 0.35, 'V', 2]

C
###CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev###
(256088, 256088)
 Here, we demonstrate 1.5 mum<missing VAR> thick CuSbSe2 PV prototypesprepared at 380-410degC by a self-regulated sputtering process using theconventional substrate device architecture.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 3, '%', 3],[45.0, 1.1, 'eV', 1],[67.0, 0.3, 'eV', 1],[100.0, 3, '%', 2],[112.0, 20, 'mA', 2],[115.0, 2, ',', 2],[122.0, 0.44, ',', 2],[128.0, 0.35, 'V', 2]

CuSbSe2
###CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev###
(256122, 256125)
 The p<missing VAR>-type CuSbSe2 absorber hasa 1.1 eV optical absorption onset, 105 cm-1 absorption coefficientat 0.3 eV above the onset, and a hole concentration of 1017 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 3, '%', 4],[8.0, 1.1, 'eV', 0],[30.0, 0.3, 'eV', 0],[63.0, 3, '%', 1],[75.0, 20, 'mA', 1],[78.0, 2, ',', 1],[85.0, 0.44, ',', 1],[91.0, 0.35, 'V', 1]

FF
###CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev###
(256206, 256207)
The promising >3% energy conversion efficiency (Jsc  20 mA/cm2, FF  0.44,Voc  0.35 V) in these initial devices is limited by bulk recombination thatlimits photocurrent, device engineering issues that affect fill factor, and aphotovoltage deficit that likely results from the non-ideal CuSbSe2/CdS bandoffset.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 3, '%', 5],[73.0, 1.1, 'eV', 1],[51.0, 0.3, 'eV', 1],[18.0, 3, '%', 0],[6.0, 20, 'mA', 0],[3.0, 2, ',', 0],[3.0, 0.44, ',', 0],[9.0, 0.35, 'V', 0]

CuSbSe2/CdS
###CuSbSe2 photovoltaic devices with 3% efficiency|Adam Welch,Lauryn Baranowski,Pawel Zawadzki,Stephan Lany,Colin Wolden,Andriy Zakutayev###
(256283, 256289)
The promising >3% energy conversion efficiency (Jsc  20 mA/cm2, FF  0.44,Voc  0.35 V) in these initial devices is limited by bulk recombination thatlimits photocurrent, device engineering issues that affect fill factor, and aphotovoltage deficit that likely results from the non-ideal CuSbSe2/CdS bandoffset.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[323.0, 3, '%', 5],[150.0, 1.1, 'eV', 1],[128.0, 0.3, 'eV', 1],[95.0, 3, '%', 0],[83.0, 20, 'mA', 0],[80.0, 2, ',', 0],[73.0, 0.44, ',', 0],[67.0, 0.35, 'V', 0]

(ZnO)
###Selective coupling of optical energy into the fundamental diffusion mode of a scattering medium|Oluwafemi S. Ojambati,Hasan Yilmaz,Ad Lagendijk,Allard P. Mosk,Willem L. Vos###
(256693, 256696)
 Thetotal energy density inside a scattering medium of zinc oxide (ZnO)nanoparticles was probed by measuring the emitted fluorescent power of spheresthat were randomly positioned inside the medium.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Selective coupling of optical energy into the fundamental diffusion mode of a scattering medium|Oluwafemi S. Ojambati,Hasan Yilmaz,Ad Lagendijk,Allard P. Mosk,Willem L. Vos###
(256921, 256921)
 Enhancedtotal energy density is crucial to increase the efficiency of white LEDs, solarcells, and of random lasers, as well as to realize controlled illumination inbiomedical optics.
EXCEPTION 3: IndexError for Ds
Abstract does not contain any numbers.

Co
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(256973, 256973)
Degradation of Co-Evaporated Perovskite Thin Film in Air.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257082, 257090)
 We investigated the degradationof CH3NH3PbI3 by air exposure using x<missing VAR>-ray diffraction (XRD), x<missing VAR>-rayphotoelectron spectroscopy (X<missing VAR>PS), and atomic force microscopy (AFM).
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257125, 257125)
 We investigated the degradationof CH3NH3PbI3 by air exposure using x<missing VAR>-ray diffraction (XRD), x<missing VAR>-rayphotoelectron spectroscopy (X<missing VAR>PS), and atomic force microscopy (AFM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257139, 257139)
 We investigated the degradationof CH3NH3PbI3 by air exposure using x<missing VAR>-ray diffraction (XRD), x<missing VAR>-rayphotoelectron spectroscopy (X<missing VAR>PS), and atomic force microscopy (AFM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257163, 257165)
 Thestoichiometric sample was grown with co-evaporation of PbI2 and CH3NH3I on a Aucoated Si wafer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3I
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257169, 257175)
 Thestoichiometric sample was grown with co-evaporation of PbI2 and CH3NH3I on a Aucoated Si wafer.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0.1111111111111111,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257181, 257181)
 Thestoichiometric sample was grown with co-evaporation of PbI2 and CH3NH3I on a Aucoated Si wafer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257186, 257186)
 Thestoichiometric sample was grown with co-evaporation of PbI2 and CH3NH3I on a Aucoated Si wafer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257214, 257216)
 It was found that the perovskite thin film gradually turned toPbI2 in air, accompanied with complete removal of N and substantial reductionof I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257233, 257233)
 It was found that the perovskite thin film gradually turned toPbI2 in air, accompanied with complete removal of N and substantial reductionof I.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257244, 257244)
 It was found that the perovskite thin film gradually turned toPbI2 in air, accompanied with complete removal of N and substantial reductionof I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257257, 257259)
 It was also observed that PbI2 crystallization roughened the film andresulted in a partial exposure of the Au substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Degradation of Co-Evaporated Perovskite Thin Film in Air|Congcong Wang,Youzhen Li,Xuemei Xu,Chenggong Wang,Fangyan Xie,Yongli Gao###
(257286, 257286)
 It was also observed that PbI2 crystallization roughened the film andresulted in a partial exposure of the Au substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Van der Waals heterojunction devices based on organohalide perovskites and two-dimensional materials|Hung-Chieh Cheng,Gongming Wang,Dehui Li,Qiyuan He,Anxiang Yin,Yuan Liu,Hao Wu,Mengning Ding,Yu Huang,Xiangfeng Duan###
(257350, 257351)
, CH3NH3PbI3) have drawnintense attention for high efficiency solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 2200, ',', 3],[341.0, 2, 'D', 4]

(PbI2)
###Van der Waals heterojunction devices based on organohalide perovskites and two-dimensional materials|Hung-Chieh Cheng,Gongming Wang,Dehui Li,Qiyuan He,Anxiang Yin,Yuan Liu,Hao Wu,Mengning Ding,Yu Huang,Xiangfeng Duan###
(257506, 257510)
 Here we report the creation of novel heterojunction devices basedon perovskites and two-dimensional (2D) crystals by taking advantage of thelayered characteristic of lead iodide (PbI2) and vapor phase intercalation.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2200, ',', 1],[182.0, 2, 'D', 2]

W
###Van der Waals heterojunction devices based on organohalide perovskites and two-dimensional materials|Hung-Chieh Cheng,Gongming Wang,Dehui Li,Qiyuan He,Anxiang Yin,Yuan Liu,Hao Wu,Mengning Ding,Yu Huang,Xiangfeng Duan###
(257555, 257555)
 Weshow a graphene/perovskite/graphene vertical stack can deliver a highestphotoresponsivity of 950 A/W and photoconductive gain of 2200, and agraphene/WSe2/perovskite/graphene heterojunction can display a high on/offratio (106) transistor behavior with distinct gate-tunable diodecharacteristics and open-circuit voltages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2200, ',', 0],[137.0, 2, 'D', 1]

WSe2
###Van der Waals heterojunction devices based on organohalide perovskites and two-dimensional materials|Hung-Chieh Cheng,Gongming Wang,Dehui Li,Qiyuan He,Anxiang Yin,Yuan Liu,Hao Wu,Mengning Ding,Yu Huang,Xiangfeng Duan###
(257575, 257577)
 Weshow a graphene/perovskite/graphene vertical stack can deliver a highestphotoresponsivity of 950 A/W and photoconductive gain of 2200, and agraphene/WSe2/perovskite/graphene heterojunction can display a high on/offratio (106) transistor behavior with distinct gate-tunable diodecharacteristics and open-circuit voltages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2200, ',', 0],[115.0, 2, 'D', 1]

Cs
###Theoretical study of asymmetric A-π-D-π-D-π-A' tribranched organic sensitizer for Dye-sensitized solar cells|Geon Hyeong Lee,Young Sik Kim###
(257835, 257835)
 An asymmetric A-pi-D<missing VAR>-pi-D<missing VAR>-pi-A tribranched organic dye (dye1) witha cyanoacrylic acid and an indolinum carboxyl acid as electron acceptors and atriphenylamine as an electron donor was designed and theoretically investigatedfor dye-sensitized solar cells (D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theoretical study of asymmetric A-π-D-π-D-π-A' tribranched organic sensitizer for Dye-sensitized solar cells|Geon Hyeong Lee,Young Sik Kim###
(257875, 257875)
 Dye1 was compared to referencewell-known dyes with single electron acceptors (D<missing VAR>5 and JYL-SQ<missing VAR>6).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSCs
###Theoretical study of asymmetric A-π-D-π-D-π-A' tribranched organic sensitizer for Dye-sensitized solar cells|Geon Hyeong Lee,Young Sik Kim###
(258045, 258047)
 Considering the overall properties,the asymmetric A-pi-D<missing VAR>-pi-D<missing VAR>-pi-A tribranched organic dye exhibitedhigh conversion efficiency performance for D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSCs
###Theoretical study of asymmetric A-π-D-π-D-π-A' tribranched organic sensitizer for Dye-sensitized solar cells|Geon Hyeong Lee,Young Sik Kim###
(258126, 258128)
 The findings of this worksuggest that optimizing the branch of electron donors and acceptors in dyesensitizers based on asymmetric A-pi-D<missing VAR>-pi-D<missing VAR>-pi-A tribranched organicdye produces good photovoltaic properties for D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Circular Photogalvanic Effect in Organometal Halide Perovskite CH$_3$NH$_3$PbI$_3$|Junwen Li,Paul M. Haney###
(258153, 258161)
Circular Photogalvanic Effect in Organometal Halide Perovskite CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Circular Photogalvanic Effect in Organometal Halide Perovskite CH$_3$NH$_3$PbI$_3$|Junwen Li,Paul M. Haney###
(258193, 258201)
 We study the circular photogalvanic effect in the organometal halideperovskite solar cell absorber CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Circular Photogalvanic Effect in Organometal Halide Perovskite CH$_3$NH$_3$PbI$_3$|Junwen Li,Paul M. Haney###
(258239, 258239)
 For crystal structureswhich lack inversion symmetry, the calculated photocurrent density is about10-9 A/W, comparable to the previously studied quantum well and bulkRashba systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OPV)
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258496, 258500)
 Organic semiconductors possess an intrinsic energetic disordercharacteristic, which holds an exceptionally important role for understandingorganic photovoltaic (OPV) operation and future optimization.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258529, 258529)
 We performedillumination intensity dependence of capacitance-voltage (C-V) measurements inPIDTDTQxPC70BM<missing VAR> based organic bulk heterojunction (BHJ) photovoltaics inworking conditions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258531, 258531)
 We performedillumination intensity dependence of capacitance-voltage (C-V) measurements inPIDTDTQxPC70BM<missing VAR> based organic bulk heterojunction (BHJ) photovoltaics inworking conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258539, 258540)
 We performedillumination intensity dependence of capacitance-voltage (C-V) measurements inPIDTDTQxPC70BM<missing VAR> based organic bulk heterojunction (BHJ) photovoltaics inworking conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC70B
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258546, 258549)
 We performedillumination intensity dependence of capacitance-voltage (C-V) measurements inPIDTDTQxPC70BM<missing VAR> based organic bulk heterojunction (BHJ) photovoltaics inworking conditions.
Featurization terminated normally.
0,0,0,0,0.013888888888888888,0.9722222222222222,0,0,0,0,0,0,0,0,0.013888888888888888,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BH
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258561, 258562)
 We performedillumination intensity dependence of capacitance-voltage (C-V) measurements inPIDTDTQxPC70BM<missing VAR> based organic bulk heterojunction (BHJ) photovoltaics inworking conditions.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258594, 258595)
 Energetic disorder profiles for the photo-active layer,PIDTDTQxPC70BM<missing VAR>, changed significantly when different interfaces were involved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC70B
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258601, 258604)
 Energetic disorder profiles for the photo-active layer,PIDTDTQxPC70BM<missing VAR>, changed significantly when different interfaces were involved.
Featurization terminated normally.
0,0,0,0,0.013888888888888888,0.9722222222222222,0,0,0,0,0,0,0,0,0.013888888888888888,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258644, 258644)
The effects of energetic disorder that could be reflected from C-V profiles areincorporated through an exponential or Gaussian model of density of states(D<missing VAR>OS), or a combination of these two.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258646, 258646)
The effects of energetic disorder that could be reflected from C-V profiles areincorporated through an exponential or Gaussian model of density of states(D<missing VAR>OS), or a combination of these two.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258679, 258679)
The effects of energetic disorder that could be reflected from C-V profiles areincorporated through an exponential or Gaussian model of density of states(D<missing VAR>OS), or a combination of these two.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BH
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258713, 258714)
 Results underlie that an identicalorganic blend in BHJ<missing VAR> solar cells exhibits different energetic disorder when itinteracts with various interfaces.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OPV
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258761, 258763)
 It may, thus, has a certain impact on OPVperformances, such as open-circuit voltage (Voc ).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258780, 258780)
 It may, thus, has a certain impact on OPVperformances, such as open-circuit voltage (Voc ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Unraveling Energetic Disorder in Organic Bulk Heterojunction Photovoltaics by Capacitance-Voltage Spectroscopy|Xixiang Zhu,Kai Wang,Changfeng Han,Qin Yang,Xiaojuan Sun,Haomiao Yu,Ming Shao,Fujun Zhang,Bin Hu###
(258842, 258843)
 Our study provides devicephysicists a different perspective view for tailoring the organic energeticdisorder parameter via interfaces in order to enhance photo-electron conversionefficiencies (PCE).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Large Thermal Motion in Halide Perovskites|T. A. Tyson,W. Gao,Y. -S. Chen,S. Ghose,Y. Yan###
(258938, 258946)
 To gain a fundamental understanding oftheir properties on an atomic level, we investigate single crystals ofCH3NH3PbI3 with a narrow transition (5 K) near 327 K.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 327, 'K', 0]

K
###Large Thermal Motion in Halide Perovskites|T. A. Tyson,W. Gao,Y. -S. Chen,S. Ghose,Y. Yan###
(258959, 258959)
 To gain a fundamental understanding oftheir properties on an atomic level, we investigate single crystals ofCH3NH3PbI3 with a narrow transition (5 K) near 327 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 327, 'K', 0]

I
###Large Thermal Motion in Halide Perovskites|T. A. Tyson,W. Gao,Y. -S. Chen,S. Ghose,Y. Yan###
(259030, 259030)
 We showthat the AD<missing VAR>Ps for I ions yield extended flat regions in the potential wellsconsistent with the measured large thermal expansion parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 327, 'K', 2]

Pb
###Large Thermal Motion in Halide Perovskites|T. A. Tyson,W. Gao,Y. -S. Chen,S. Ghose,Y. Yan###
(259096, 259096)
 Moleculardynamics simulations reveal that this material exhibits significant highasymmetries in the Pb-I pair distribution functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 327, 'K', 3]

I
###Large Thermal Motion in Halide Perovskites|T. A. Tyson,W. Gao,Y. -S. Chen,S. Ghose,Y. Yan###
(259098, 259098)
 Moleculardynamics simulations reveal that this material exhibits significant highasymmetries in the Pb-I pair distribution functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 327, 'K', 3]

Sn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259223, 259223)
Defect properties of Sn- and Ge-doped ZnTe Suitability for intermediate-band solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259228, 259228)
Defect properties of Sn- and Ge-doped ZnTe Suitability for intermediate-band solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259232, 259233)
Defect properties of Sn- and Ge-doped ZnTe Suitability for intermediate-band solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259266, 259266)
 We investigate the electronic structure and defect properties of Sn- and Ge-doped ZnTe by first-principles calculations within the DFT+G<missing VAR>W formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259271, 259271)
 We investigate the electronic structure and defect properties of Sn- and Ge-doped ZnTe by first-principles calculations within the DFT+G<missing VAR>W formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259277, 259278)
 We investigate the electronic structure and defect properties of Sn- and Ge-doped ZnTe by first-principles calculations within the DFT+G<missing VAR>W formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259297, 259297)
 We investigate the electronic structure and defect properties of Sn- and Ge-doped ZnTe by first-principles calculations within the DFT+G<missing VAR>W formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259311, 259311)
 Wefind that (textSntextZn) and (textGetextZn) introduceisolated energy levels deep in the band gap of ZnTe, derived from Sn-5s<missing VAR> andGe-4s<missing VAR> states, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259313, 259313)
 Wefind that (textSntextZn) and (textGetextZn) introduceisolated energy levels deep in the band gap of ZnTe, derived from Sn-5s<missing VAR> andGe-4s<missing VAR> states, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259320, 259320)
 Wefind that (textSntextZn) and (textGetextZn) introduceisolated energy levels deep in the band gap of ZnTe, derived from Sn-5s<missing VAR> andGe-4s<missing VAR> states, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259322, 259322)
 Wefind that (textSntextZn) and (textGetextZn) introduceisolated energy levels deep in the band gap of ZnTe, derived from Sn-5s<missing VAR> andGe-4s<missing VAR> states, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259346, 259347)
 Wefind that (textSntextZn) and (textGetextZn) introduceisolated energy levels deep in the band gap of ZnTe, derived from Sn-5s<missing VAR> andGe-4s<missing VAR> states, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259354, 259354)
 Wefind that (textSntextZn) and (textGetextZn) introduceisolated energy levels deep in the band gap of ZnTe, derived from Sn-5s<missing VAR> andGe-4s<missing VAR> states, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259362, 259362)
 Wefind that (textSntextZn) and (textGetextZn) introduceisolated energy levels deep in the band gap of ZnTe, derived from Sn-5s<missing VAR> andGe-4s<missing VAR> states, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259382, 259382)
 Moreover, the incorporation of Sn and Ge on the Znsite is favored in p<missing VAR>-type ZnTe, in both Zn-rich and Te-rich environments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259386, 259386)
 Moreover, the incorporation of Sn and Ge on the Znsite is favored in p<missing VAR>-type ZnTe, in both Zn-rich and Te-rich environments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259392, 259392)
 Moreover, the incorporation of Sn and Ge on the Znsite is favored in p<missing VAR>-type ZnTe, in both Zn-rich and Te-rich environments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259407, 259408)
 Moreover, the incorporation of Sn and Ge on the Znsite is favored in p<missing VAR>-type ZnTe, in both Zn-rich and Te-rich environments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259415, 259415)
 Moreover, the incorporation of Sn and Ge on the Znsite is favored in p<missing VAR>-type ZnTe, in both Zn-rich and Te-rich environments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259421, 259421)
 Moreover, the incorporation of Sn and Ge on the Znsite is favored in p<missing VAR>-type ZnTe, in both Zn-rich and Te-rich environments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259494, 259494)
 Our results suggest that Sn- and Ge-doped ZnTe wouldbe a suitable material for the development of intermediate-band solar cells,which have the potential to achieve efficiencies beyond the single-junctionlimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259499, 259499)
 Our results suggest that Sn- and Ge-doped ZnTe wouldbe a suitable material for the development of intermediate-band solar cells,which have the potential to achieve efficiencies beyond the single-junctionlimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Defect properties of Sn- and Ge-doped ZnTe: Suitability for intermediate-band solar cells|Mauricio A. Flores###
(259503, 259504)
 Our results suggest that Sn- and Ge-doped ZnTe wouldbe a suitable material for the development of intermediate-band solar cells,which have the potential to achieve efficiencies beyond the single-junctionlimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259595, 259603)
Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FT<missing VAR>O/TiO2 Substrate.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259613, 259613)
Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FT<missing VAR>O/TiO2 Substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/TiO2
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259615, 259619)
Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FT<missing VAR>O/TiO2 Substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

PC
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259631, 259632)
 Photovoltaic conversion efficiency (PCE) of halide perovskite solar cells hasrisen spectacularly, yet the very crystalline structure of CH3NH3PbI3 remainsambiguous after extensive researches, and its polar nature remains hotlydebated.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259666, 259674)
 Photovoltaic conversion efficiency (PCE) of halide perovskite solar cells hasrisen spectacularly, yet the very crystalline structure of CH3NH3PbI3 remainsambiguous after extensive researches, and its polar nature remains hotlydebated.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259716, 259724)
 Here we present compelling evidences that CH3NH3PbI3 crystalsself-grown on FT<missing VAR>O/TiO2 substrate consist of ferroic domains with alternatingpolar and nonpolar orders, in contrast to previous experimental and theoreticalexpectations, and polar domains possess reduced photocurrent.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259735, 259735)
 Here we present compelling evidences that CH3NH3PbI3 crystalsself-grown on FT<missing VAR>O/TiO2 substrate consist of ferroic domains with alternatingpolar and nonpolar orders, in contrast to previous experimental and theoreticalexpectations, and polar domains possess reduced photocurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/TiO2
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259737, 259741)
 Here we present compelling evidences that CH3NH3PbI3 crystalsself-grown on FT<missing VAR>O/TiO2 substrate consist of ferroic domains with alternatingpolar and nonpolar orders, in contrast to previous experimental and theoreticalexpectations, and polar domains possess reduced photocurrent.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CH3NH3PbI3
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259817, 259825)
 It is found thatpolar and nonpolar orders of CH3NH3PbI3 can be distinguished from theirdistinct lateral piezoresponse, energy dissipation, first and second harmonicelectromechanical couplings, and temperature variation, even though theirdifference in crystalline lattice is very subtle, and they possess two-waymemory effect through cubic-tetragonal phase transition.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259938, 259946)
 These findings resolvekey questions regarding polar nature of CH3NH3PbI3 and its implication onphotovoltaics, reconcile contradictory data widely reported, and point adirection toward engineering ferroic domains for enhanced PCE<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Ferroic Domains of Alternating Polar and Nonpolar Orders Regulate Photocurrent in Single Crystalline CH3NH3PbI3 Films Self-grown on FTO/TiO2 Substrate|Boyuan Huang,Guoli Kong,Ehsan Nasr Esfahani,Shulin Chen,Qian Li,Junxi Yu,Ningan Xu,Ying Zhang,Shuhong Xie,Haidan Wen,Peng Gao,Jinjin Zhao,Jiangyu Li###
(259992, 259993)
 These findings resolvekey questions regarding polar nature of CH3NH3PbI3 and its implication onphotovoltaics, reconcile contradictory data widely reported, and point adirection toward engineering ferroic domains for enhanced PCE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C60
###Influence of the aggregate state on band structure and optical properties of C60 computed with different methods|Amrita Pal,Saeid Arabnejad,Koichi Yamashita,Sergei Manzhos###
(260029, 260030)
Influence of the aggregate state on band structure and optical properties of C60 computed with different methods.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 0.1, 'eV', 4]

C60
###Influence of the aggregate state on band structure and optical properties of C60 computed with different methods|Amrita Pal,Saeid Arabnejad,Koichi Yamashita,Sergei Manzhos###
(260041, 260042)
 C60 and C60 based molecules are efficient acceptor and electron transportlayers for planar perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 0.1, 'eV', 3]

C60
###Influence of the aggregate state on band structure and optical properties of C60 computed with different methods|Amrita Pal,Saeid Arabnejad,Koichi Yamashita,Sergei Manzhos###
(260046, 260047)
 C60 and C60 based molecules are efficient acceptor and electron transportlayers for planar perovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.1, 'eV', 3]

C60
###Influence of the aggregate state on band structure and optical properties of C60 computed with different methods|Amrita Pal,Saeid Arabnejad,Koichi Yamashita,Sergei Manzhos###
(260109, 260110)
 While properties of these moleculesare well studied by ab initiomethods, those of solid C60, specifically itsoptical absorption properties, are not.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.1, 'eV', 2]

C60
###Influence of the aggregate state on band structure and optical properties of C60 computed with different methods|Amrita Pal,Saeid Arabnejad,Koichi Yamashita,Sergei Manzhos###
(260184, 260185)
 We present a combined DensityFunctional Theory - Density Functional Tight Binding study of the effect ofsolid state packing on bandstructure and optical absorption of C60.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.1, 'eV', 1]

C60
###Influence of the aggregate state on band structure and optical properties of C60 computed with different methods|Amrita Pal,Saeid Arabnejad,Koichi Yamashita,Sergei Manzhos###
(260207, 260208)
 The valenceand conduction band edge energies of solid C60 differ on the order of 0.1 eVfrom single molecule frontier orbital energies.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.1, 'eV', 0]

(B)
###Influence of the aggregate state on band structure and optical properties of C60 computed with different methods|Amrita Pal,Saeid Arabnejad,Koichi Yamashita,Sergei Manzhos###
(260262, 260264)
 We show that calculations ofoptical properties using linear response TD-DFT(B) or the imaginary part of thedielectric constant (dipole approximation) can result in unrealistically largeredshift in the presence of intermolecular interactions compared to availableexperimental data.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.1, 'eV', 1]

C60
###Influence of the aggregate state on band structure and optical properties of C60 computed with different methods|Amrita Pal,Saeid Arabnejad,Koichi Yamashita,Sergei Manzhos###
(260361, 260362)
 We show that optical spectra computed from thefrequency-dependent real polarizability better reproduce the effect of C60aggregation on optical absorption and may be more suited to study effects ofmolecular aggregation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.1, 'eV', 2]

SiC
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260413, 260414)
Boron-doping of cubic SiC for intermediate band solar cells a scanning transmission electron microscopy study.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 3, 'C', 2],[200.0, 3, 'C', 3],[232.0, 1273, 'K', 4],[264.0, 1773, 'K', 4],[296.0, 1773, 'K', 5]

(B)
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260441, 260443)
 Boron (B) has the potential for generating an intermediate band in cubicsilicon carbide (3C-SiC), turning this material into a highly efficientabsorber for single-junction solar cells.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 3, 'C', 1],[171.0, 3, 'C', 2],[203.0, 1273, 'K', 3],[235.0, 1773, 'K', 3],[267.0, 1773, 'K', 4]

C
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260472, 260472)
 Boron (B) has the potential for generating an intermediate band in cubicsilicon carbide (3C-SiC), turning this material into a highly efficientabsorber for single-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3, 'C', 1],[142.0, 3, 'C', 2],[174.0, 1273, 'K', 3],[206.0, 1773, 'K', 3],[238.0, 1773, 'K', 4]

C
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260475, 260475)
 Boron (B) has the potential for generating an intermediate band in cubicsilicon carbide (3C-SiC), turning this material into a highly efficientabsorber for single-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3, 'C', 1],[139.0, 3, 'C', 2],[171.0, 1273, 'K', 3],[203.0, 1773, 'K', 3],[235.0, 1773, 'K', 4]

B
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260546, 260546)
 The formation of a delocalized banddemands high concentration of the foreign element, but the precipitationbehavior of B in the 3C polymorph of SiC is not well known.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'C', 0],[68.0, 3, 'C', 1],[100.0, 1273, 'K', 2],[132.0, 1773, 'K', 2],[164.0, 1773, 'K', 3]

SiC
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260557, 260558)
 The formation of a delocalized banddemands high concentration of the foreign element, but the precipitationbehavior of B in the 3C polymorph of SiC is not well known.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3, 'C', 0],[56.0, 3, 'C', 1],[88.0, 1273, 'K', 2],[120.0, 1773, 'K', 2],[152.0, 1773, 'K', 3]

B
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260611, 260611)
 Here,probe-corrected scanning transmission electron microscopy and secondary-ionmass spectrometry are used to investigate precipitation mechanisms inB-implanted 3C-SiC as a function of temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 3, 'C', 1],[3.0, 3, 'C', 0],[35.0, 1273, 'K', 1],[67.0, 1773, 'K', 1],[99.0, 1773, 'K', 2]

SiC
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260616, 260617)
 Here,probe-corrected scanning transmission electron microscopy and secondary-ionmass spectrometry are used to investigate precipitation mechanisms inB-implanted 3C-SiC as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3, 'C', 1],[2.0, 3, 'C', 0],[29.0, 1273, 'K', 1],[61.0, 1773, 'K', 1],[93.0, 1773, 'K', 2]

B
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260656, 260656)
 Point-defect clustering wasdetected after annealing at 1273 K, while stacking faults, B-rich precipitatesand dislocation networks developed in the 1573 - 1773 K range.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 3, 'C', 2],[42.0, 3, 'C', 1],[10.0, 1273, 'K', 0],[22.0, 1773, 'K', 0],[54.0, 1773, 'K', 1]

B13C2
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260694, 260697)
 The precipitatesadopted the rhombohedral B13C2 structure and trapped B up to 1773 K.
Featurization terminated normally.
0,0,0,0,0.8666666666666667,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 3, 'C', 3],[80.0, 3, 'C', 2],[48.0, 1273, 'K', 1],[16.0, 1773, 'K', 1],[13.0, 1773, 'K', 0]

B
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260705, 260705)
 The precipitatesadopted the rhombohedral B13C2 structure and trapped B up to 1773 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 3, 'C', 3],[91.0, 3, 'C', 2],[59.0, 1273, 'K', 1],[27.0, 1773, 'K', 1],[5.0, 1773, 'K', 0]

B
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260733, 260733)
 Above thistemperature, higher solubility reduced precipitation and free B diffused out ofthe implantation layer.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, 'C', 4],[119.0, 3, 'C', 3],[87.0, 1273, 'K', 2],[55.0, 1773, 'K', 2],[23.0, 1773, 'K', 1]

K
###Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study|Patricia Almeida Carvalho,Annett Thørgesen,Quanbao Ma,Daniel Nielsen Wright,Spyros Diplas,Augustinas Galeckas,Alexander Azarov,Valdas Jokubavicius,Jianwu Sun,Mikael Syväjärvi,Bengt Gunnar Svensson,Ole Martin Løvvik###
(260771, 260771)
cm-3 were achieved at 1873K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 3, 'C', 6],[157.0, 3, 'C', 5],[125.0, 1273, 'K', 4],[93.0, 1773, 'K', 4],[61.0, 1773, 'K', 3]

As
###Perturbing beyond the shallow amplitude regime: Green's function scattering formalism with Bloch modes|A. Abass,A. Martins,S. Nanz,B. -H. V. Borges,E. R. Martins,C. Rockstuhl###
(261062, 261062)
 As an example of our methods<missing VAR>strength, we examine an electrically decoupled binary light trapping textureand demonstrate how introducing disorder may improve light incoupling into theconsidered solar cell structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites|Menno Bokdam,Tobias Sander,Alessandro Stroppa,Silvia Picozzi,D. D. Sarma,Cesare Franchini,Georg Kresse###
(262584, 262586)
 For themost studied methylammonium(M<missing VAR>A)PbI3 perovskite, a large range (6-55 meV) ofexciton binding energies has been reported by various experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites|Menno Bokdam,Tobias Sander,Alessandro Stroppa,Silvia Picozzi,D. D. Sarma,Cesare Franchini,Georg Kresse###
(262603, 262603)
 For themost studied methylammonium(M<missing VAR>A)PbI3 perovskite, a large range (6-55 meV) ofexciton binding energies has been reported by various experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites|Menno Bokdam,Tobias Sander,Alessandro Stroppa,Silvia Picozzi,D. D. Sarma,Cesare Franchini,Georg Kresse###
(262654, 262654)
 For the M<missing VAR>APbX<missing VAR>3perovskites we report on relativistic G<missing VAR>W-BSE<missing VAR> calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites|Menno Bokdam,Tobias Sander,Alessandro Stroppa,Silvia Picozzi,D. D. Sarma,Cesare Franchini,Georg Kresse###
(262670, 262670)
 For the M<missing VAR>APbX<missing VAR>3perovskites we report on relativistic G<missing VAR>W-BSE<missing VAR> calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites|Menno Bokdam,Tobias Sander,Alessandro Stroppa,Silvia Picozzi,D. D. Sarma,Cesare Franchini,Georg Kresse###
(262672, 262673)
 For the M<missing VAR>APbX<missing VAR>3perovskites we report on relativistic G<missing VAR>W-BSE<missing VAR> calculations.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites|Menno Bokdam,Tobias Sander,Alessandro Stroppa,Silvia Picozzi,D. D. Sarma,Cesare Franchini,Georg Kresse###
(262705, 262705)
 Atlow temperatures it predicts exciton binding energies in agreement with thereported large values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites|Menno Bokdam,Tobias Sander,Alessandro Stroppa,Silvia Picozzi,D. D. Sarma,Cesare Franchini,Georg Kresse###
(262742, 262744)
 For M<missing VAR>APbI3, phonon modes present in this frequencyrange have a negligible contribution to the ionic screening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3|Xin Qian,Xiaokun Gu,Ronggui Yang###
(262894, 262902)
Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 160, 'K', 3],[175.0, 400, 'K', 3],[286.0, 330, 'K', 4]

CH3NH3PbI3
###Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3|Xin Qian,Xiaokun Gu,Ronggui Yang###
(263038, 263046)
 Based on the potentialdeveloped from the density functional theory calculations, we studied thelattice thermal conductivity of the hybrid halide perovskite CH3NH3PbI3 usingequilibrium molecular dynamics simulations.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 160, 'K', 1],[31.0, 400, 'K', 1],[142.0, 330, 'K', 2]

K
###Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3|Xin Qian,Xiaokun Gu,Ronggui Yang###
(263096, 263096)
 Temperature-dependent thermalconductivity is reported from 160 K to 400 K, which covers the tetragonal phase(160-330 K) and the pseudocubic phase (>330K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 160, 'K', 0],[19.0, 400, 'K', 0],[92.0, 330, 'K', 1]

K
###Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3|Xin Qian,Xiaokun Gu,Ronggui Yang###
(263110, 263110)
 Temperature-dependent thermalconductivity is reported from 160 K to 400 K, which covers the tetragonal phase(160-330 K) and the pseudocubic phase (>330K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 160, 'K', 0],[33.0, 400, 'K', 0],[78.0, 330, 'K', 1]

W
###Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3|Xin Qian,Xiaokun Gu,Ronggui Yang###
(263128, 263128)
 A very low thermal conductivity(0.50 W/m<missing VAR>K) is found in the tetragonal phase at room temperature, whereas amuch higher thermal conductivity is found in the pseudocubic phase (1.80 W/m<missing VAR>Kat 330 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 160, 'K', 1],[51.0, 400, 'K', 1],[60.0, 330, 'K', 0]

K
###Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3|Xin Qian,Xiaokun Gu,Ronggui Yang###
(263131, 263131)
 A very low thermal conductivity(0.50 W/m<missing VAR>K) is found in the tetragonal phase at room temperature, whereas amuch higher thermal conductivity is found in the pseudocubic phase (1.80 W/m<missing VAR>Kat 330 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 160, 'K', 1],[54.0, 400, 'K', 1],[57.0, 330, 'K', 0]

W
###Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3|Xin Qian,Xiaokun Gu,Ronggui Yang###
(263181, 263181)
 A very low thermal conductivity(0.50 W/m<missing VAR>K) is found in the tetragonal phase at room temperature, whereas amuch higher thermal conductivity is found in the pseudocubic phase (1.80 W/m<missing VAR>Kat 330 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 160, 'K', 1],[104.0, 400, 'K', 1],[7.0, 330, 'K', 0]

K
###Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3|Xin Qian,Xiaokun Gu,Ronggui Yang###
(263184, 263184)
 A very low thermal conductivity(0.50 W/m<missing VAR>K) is found in the tetragonal phase at room temperature, whereas amuch higher thermal conductivity is found in the pseudocubic phase (1.80 W/m<missing VAR>Kat 330 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 160, 'K', 1],[107.0, 400, 'K', 1],[4.0, 330, 'K', 0]

CH3NH3PbI3
###Lattice Thermal Conductivity of Organic-Inorganic Hybrid Perovskite CH3NH3PbI3|Xin Qian,Xiaokun Gu,Ronggui Yang###
(263240, 263248)
 The low group velocity of acoustic phonons and the stronganharmonicity are found responsible for the relatively low thermal conductivityof the tetragonal CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 160, 'K', 2],[163.0, 400, 'K', 2],[52.0, 330, 'K', 1]

ZnO
###Spatial modeling of the 3D morphology of hybrid polymer-ZnO solar cells, based on electron tomography data|O. Stenzel,V. Schmidt,H. Hassfeld,R. Thiedmann,L. J. A. Koster,S. D. Oosterhout,S. S. van Bavel,M. M. Wienk,J. Loos,R. A. J. Janssen###
(263672, 263673)
Spatial modeling of the 3D morphology of hybrid polymer-ZnO solar cells, based on electron tomography data.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3, 'D', 0],[35.0, 3, 'D', 1],[228.0, 2, 'D', 5]

(Zn3P2)
###Intrinsic Defects and Dopability of Zinc Phosphide|Steven Demers,Axel van de Walle###
(264050, 264055)
 Zinc Phosphide (Zn3P2) could be the basis for cheap and highly efficientsolar cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Intrinsic Defects and Dopability of Zinc Phosphide|Steven Demers,Axel van de Walle###
(264115, 264115)
 In an effort to understand the mechanism behind this, theenergetics and electronic structure of intrinsic point defects in zincphosphide are studied using generalized Kohn-Sham theory and utilizing theHeyd, Scuseria, and Ernzerhof (HSE) hybrid functional for exchange andcorrelation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Intrinsic Defects and Dopability of Zinc Phosphide|Steven Demers,Axel van de Walle###
(264192, 264193)
 In an effort to understand the mechanism behind this, theenergetics and electronic structure of intrinsic point defects in zincphosphide are studied using generalized Kohn-Sham theory and utilizing theHeyd, Scuseria, and Ernzerhof (HSE) hybrid functional for exchange andcorrelation.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Intrinsic Defects and Dopability of Zinc Phosphide|Steven Demers,Axel van de Walle###
(264238, 264239)
 Novel perturbation extrapolation is utilized to extend the useof the computationally expensive HSE<missing VAR> functional to this large-scale defectsystem.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn3P2
###Intrinsic Defects and Dopability of Zinc Phosphide|Steven Demers,Axel van de Walle###
(264294, 264297)
 According to calculations, the formation energy of charged phosphorusinterstitial defects are very low in n<missing VAR>-type Zn3P2 and act as electronsinks, nullifying the desired doping and lowering the fermi-level back towardsthe p<missing VAR>-type regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Multiscale modeling of solar cells with interface phenomena|David H. Foster,Timothy Costa,Malgorzata Peszynska,Guenter Schneider###
(264713, 264714)
 We show results forCIG<missing VAR>S/CdS, Si/ZnS, and Si/GaAs heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/CdS
###Multiscale modeling of solar cells with interface phenomena|David H. Foster,Timothy Costa,Malgorzata Peszynska,Guenter Schneider###
(264716, 264719)
 We show results forCIG<missing VAR>S/CdS, Si/ZnS, and Si/GaAs heterojunctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si/ZnS
###Multiscale modeling of solar cells with interface phenomena|David H. Foster,Timothy Costa,Malgorzata Peszynska,Guenter Schneider###
(264722, 264725)
 We show results forCIG<missing VAR>S/CdS, Si/ZnS, and Si/GaAs heterojunctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si/GaAs
###Multiscale modeling of solar cells with interface phenomena|David H. Foster,Timothy Costa,Malgorzata Peszynska,Guenter Schneider###
(264730, 264733)
 We show results forCIG<missing VAR>S/CdS, Si/ZnS, and Si/GaAs heterojunctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cs
###Solar-energy conversion and light emission in an atomic monolayer p-n diode|Andreas Pospischil,Marco M. Furchi,Thomas Mueller###
(264810, 264810)
 Two-dimensional (2D) atomic crystals, such as graphene and atomically thintransition metal dichalcogenides (TMDCs), are currently receiving a lot ofattention.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 2, 'D', 2],[175.0, 2, 'D', 3],[270.0, 2, 'D', 7]

(WSe2)
###Solar-energy conversion and light emission in an atomic monolayer p-n diode|Andreas Pospischil,Marco M. Furchi,Thomas Mueller###
(264927, 264931)
 Here, we report a truly 2D p-n junctiondiode, based on an electrostatically doped tungsten diselenide (WSe2)monolayer.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2, 'D', 0],[54.0, 2, 'D', 1],[149.0, 2, 'D', 5]

As
###Solar-energy conversion and light emission in an atomic monolayer p-n diode|Andreas Pospischil,Marco M. Furchi,Thomas Mueller###
(264937, 264937)
 As p-n diodes are the basic building block in a wide variety ofoptoelectronic devices, our demonstration constitutes an important advancetowards 2D optoelectronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'D', 1],[48.0, 2, 'D', 0],[143.0, 2, 'D', 4]

F
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265461, 265461)
 An effective method, performed adding external electric field (EEF) onCH3NH3PbI3-xClx (OPIC) perovskite layer during the annealing process, isproposed to improve the performance of the solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 14.33, ',', 2],[169.0, 11.4, '%', 2]

CH3NH3PbI3-x
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265467, 265477)
 An effective method, performed adding external electric field (EEF) onCH3NH3PbI3-xClx (OPIC) perovskite layer during the annealing process, isproposed to improve the performance of the solar cell.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[144.0, 14.33, ',', 2],[153.0, 11.4, '%', 2]

(OPIC)
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265480, 265485)
 An effective method, performed adding external electric field (EEF) onCH3NH3PbI3-xClx (OPIC) perovskite layer during the annealing process, isproposed to improve the performance of the solar cell.
Featurization successful!
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 14.33, ',', 2],[145.0, 11.4, '%', 2]

F
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265528, 265528)
 By harmonizing EEFdirection with the hole/electron modified layer, a significant improvement onthe short circuit current and fill factor is obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 14.33, ',', 1],[102.0, 11.4, '%', 1]

F
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265594, 265594)
 Using the simplestplanar device, the largest positive EEF of 2.5106 V/m<missing VAR> makes PCE<missing VAR> increase from12.86 to 14.33, whose increment reaches 11.4% compared with non-EFE sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 14.33, ',', 0],[36.0, 11.4, '%', 0]

V
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265602, 265602)
 Using the simplestplanar device, the largest positive EEF of 2.5106 V/m<missing VAR> makes PCE<missing VAR> increase from12.86 to 14.33, whose increment reaches 11.4% compared with non-EFE sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 14.33, ',', 0],[28.0, 11.4, '%', 0]

PC
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265608, 265609)
 Using the simplestplanar device, the largest positive EEF of 2.5106 V/m<missing VAR> makes PCE<missing VAR> increase from12.86 to 14.33, whose increment reaches 11.4% compared with non-EFE sample.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 14.33, ',', 0],[21.0, 11.4, '%', 0]

F
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265677, 265677)
 Byanalyzing the best and the statistics data, a fine positive correlation betweenEEF and PE<missing VAR>C is found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 14.33, ',', 1],[47.0, 11.4, '%', 1]

P
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265681, 265681)
 Byanalyzing the best and the statistics data, a fine positive correlation betweenEEF and PE<missing VAR>C is found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 14.33, ',', 1],[51.0, 11.4, '%', 1]

C
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265683, 265683)
 Byanalyzing the best and the statistics data, a fine positive correlation betweenEEF and PE<missing VAR>C is found.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 14.33, ',', 1],[53.0, 11.4, '%', 1]

OPIC
###An efficient method for performance improvement of organometal halide perovskite solar cell via external electric field|Xiu Gong,Heng Ma,Yu-Rong Jiang,Meng Li,Zhao-Kui Wang,Tetsuo Soga###
(265785, 265788)
 The study proposed a physical processin modifying the cell efficiency and provides a new evidence on current-voltagehysteresis of OPIC devices.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 14.33, ',', 3],[155.0, 11.4, '%', 3]

W
###Phosphorene and Transition Metal Dichalcogenide 2D Heterojunctions: Application in Excitonic Solar Cells|Vellayappan Dheivanayagam S/O Ganesan,Chun Zhang,Yuan Ping Feng,Lei Shen###
(265834, 265834)
 Using the first-principles G<missing VAR>W-Bethe-Salpeter equation method, here we studythe excited-state properties, including quasi-particle band structures andoptical spectra, of phosphorene, a two-dimensional (2D) atomic layer of blackphosphorus.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'D', 1],[90.0, 2.15, 'eV', 1],[102.0, 1.6, 'eV', 1],[201.0, 12, '%', 3],[217.0, 20, '%', 3]

II
###Phosphorene and Transition Metal Dichalcogenide 2D Heterojunctions: Application in Excitonic Solar Cells|Vellayappan Dheivanayagam S/O Ganesan,Chun Zhang,Yuan Ping Feng,Lei Shen###
(265981, 265982)
 Next, this potential application is analysed by consideringtype-II heterostructures with single layered phosphorene and transition metaldichalcogenides (TMDs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, 'D', 3],[57.0, 2.15, 'eV', 1],[45.0, 1.6, 'eV', 1],[53.0, 12, '%', 1],[69.0, 20, '%', 1]

Ds
###Phosphorene and Transition Metal Dichalcogenide 2D Heterojunctions: Application in Excitonic Solar Cells|Vellayappan Dheivanayagam S/O Ganesan,Chun Zhang,Yuan Ping Feng,Lei Shen###
(266006, 266006)
 Next, this potential application is analysed by consideringtype-II heterostructures with single layered phosphorene and transition metaldichalcogenides (TMDs).
EXCEPTION 3: IndexError for Ds
[196.0, 2, 'D', 3],[82.0, 2.15, 'eV', 1],[70.0, 1.6, 'eV', 1],[29.0, 12, '%', 1],[45.0, 20, '%', 1]

Cu2ZnSnS4
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266457, 266462)
 The efficiencies of solar cells based on kesterite Cu2ZnSnS4 (CZTS) andCu2ZnSnSe4 (CZTSe) are limited by a low open-circuit voltage due to highrates of non-radiative electron-hole recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.1, 'eV', 1],[139.0, 0.4, 'eV', 1]

C
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266465, 266465)
 The efficiencies of solar cells based on kesterite Cu2ZnSnS4 (CZTS) andCu2ZnSnSe4 (CZTSe) are limited by a low open-circuit voltage due to highrates of non-radiative electron-hole recombination.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.1, 'eV', 1],[136.0, 0.4, 'eV', 1]

S
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266468, 266468)
 The efficiencies of solar cells based on kesterite Cu2ZnSnS4 (CZTS) andCu2ZnSnSe4 (CZTSe) are limited by a low open-circuit voltage due to highrates of non-radiative electron-hole recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 0.1, 'eV', 1],[133.0, 0.4, 'eV', 1]

Cu2ZnSnSe4
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266474, 266479)
 The efficiencies of solar cells based on kesterite Cu2ZnSnS4 (CZTS) andCu2ZnSnSe4 (CZTSe) are limited by a low open-circuit voltage due to highrates of non-radiative electron-hole recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.1, 'eV', 1],[122.0, 0.4, 'eV', 1]

C
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266482, 266482)
 The efficiencies of solar cells based on kesterite Cu2ZnSnS4 (CZTS) andCu2ZnSnSe4 (CZTSe) are limited by a low open-circuit voltage due to highrates of non-radiative electron-hole recombination.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0.1, 'eV', 1],[119.0, 0.4, 'eV', 1]

Se
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266485, 266485)
 The efficiencies of solar cells based on kesterite Cu2ZnSnS4 (CZTS) andCu2ZnSnSe4 (CZTSe) are limited by a low open-circuit voltage due to highrates of non-radiative electron-hole recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.1, 'eV', 1],[116.0, 0.4, 'eV', 1]

C
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266554, 266554)
 To probe the origin of thisbottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming aweak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV forCZTSe/wurtzite-CdS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.1, 'eV', 0],[47.0, 0.4, 'eV', 0]

S(Se)
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266557, 266560)
 To probe the origin of thisbottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming aweak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV forCZTSe/wurtzite-CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.1, 'eV', 0],[41.0, 0.4, 'eV', 0]

CdS
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266564, 266565)
 To probe the origin of thisbottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming aweak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV forCZTSe/wurtzite-CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.1, 'eV', 0],[36.0, 0.4, 'eV', 0]

C
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266582, 266582)
 To probe the origin of thisbottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming aweak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV forCZTSe/wurtzite-CdS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.1, 'eV', 0],[19.0, 0.4, 'eV', 0]

S
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266585, 266585)
 To probe the origin of thisbottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming aweak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV forCZTSe/wurtzite-CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.1, 'eV', 0],[16.0, 0.4, 'eV', 0]

CdS
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266589, 266590)
 To probe the origin of thisbottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming aweak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV forCZTSe/wurtzite-CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.1, 'eV', 0],[11.0, 0.4, 'eV', 0]

C
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266606, 266606)
 To probe the origin of thisbottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming aweak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV forCZTSe/wurtzite-CdS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0.1, 'eV', 0],[5.0, 0.4, 'eV', 0]

Se
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266609, 266609)
 To probe the origin of thisbottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming aweak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV forCZTSe/wurtzite-CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.1, 'eV', 0],[8.0, 0.4, 'eV', 0]

CdS
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266613, 266614)
 To probe the origin of thisbottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming aweak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV forCZTSe/wurtzite-CdS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.1, 'eV', 0],[12.0, 0.4, 'eV', 0]

Fr
###Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells|Bartomeu Monserrat,Ji-Sang Park,Sunghyun Kim,Aron Walsh###
(266731, 266731)
 We further resolve an outstanding discrepancy betweenmeasured and calculated phonon frequencies for the kesterites, and use these toestimate the upper limit of electron and hole mobilities based on optic phononFrohlich scattering, which uncovers an intrinsic asymmetry with faster(minority carrier) electron mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.1, 'eV', 2],[130.0, 0.4, 'eV', 2]

GaAsSb/GaAsN
###Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells|Urs Aeberhard,Alicia Gonzalo,Jose María Ulloa###
(266777, 266783)
Photocarrier extraction in GaAsSb/GaAsN type-II Q<missing VAR>W superlattice solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

II
###Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells|Urs Aeberhard,Alicia Gonzalo,Jose María Ulloa###
(266787, 266788)
Photocarrier extraction in GaAsSb/GaAsN type-II Q<missing VAR>W superlattice solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells|Urs Aeberhard,Alicia Gonzalo,Jose María Ulloa###
(266791, 266791)
Photocarrier extraction in GaAsSb/GaAsN type-II Q<missing VAR>W superlattice solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAsSb/GaAsN
###Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells|Urs Aeberhard,Alicia Gonzalo,Jose María Ulloa###
(266810, 266816)
 Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum wellsuperlattices are investigated by means of inelastic quantum transportcalculations based on the non-equilibrium Greens<missing VAR> function formalism.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

II
###Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells|Urs Aeberhard,Alicia Gonzalo,Jose María Ulloa###
(266820, 266821)
 Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum wellsuperlattices are investigated by means of inelastic quantum transportcalculations based on the non-equilibrium Greens<missing VAR> function formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAsSb/GaAsN
###Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells|Urs Aeberhard,Alicia Gonzalo,Jose María Ulloa###
(267023, 267029)
 Theresults for the carrier extraction efficiency are related to experimental datafor different symmetric GaAsSb/GaAsN type-II quantum well superlattice solarcell devices and provide a qualitative explanation for the experimentallyobserved dependence of photovoltaic device performance on period thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

II
###Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells|Urs Aeberhard,Alicia Gonzalo,Jose María Ulloa###
(267033, 267034)
 Theresults for the carrier extraction efficiency are related to experimental datafor different symmetric GaAsSb/GaAsN type-II quantum well superlattice solarcell devices and provide a qualitative explanation for the experimentallyobserved dependence of photovoltaic device performance on period thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSC
###Influence of Carbon Nanomaterial Counter Electrode Composition, Dye Selection, and Photoanode Scaffolding on DSSC Performance|Benjamin K Barnes,Joshua Orebiyi,Kausik S Das###
(267122, 267124)
Influence of Carbon Nanomaterial Counter Electrode Composition, Dye Selection, and Photoanode Scaffolding on D<missing VAR>SSC Performance.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Influence of Carbon Nanomaterial Counter Electrode Composition, Dye Selection, and Photoanode Scaffolding on DSSC Performance|Benjamin K Barnes,Joshua Orebiyi,Kausik S Das###
(267129, 267129)
 As technology continues to evolve, the demand for renewable and sustainableenergy continues to grow.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Influence of Carbon Nanomaterial Counter Electrode Composition, Dye Selection, and Photoanode Scaffolding on DSSC Performance|Benjamin K Barnes,Joshua Orebiyi,Kausik S Das###
(267162, 267162)
 As the use of renewable energies, specificallyphotovoltaics, is continually being adopted and incorporate into everyday life,it is evident that a need for an increase in the amount of energy that isderived from these processes is necessary.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of Carbon Nanomaterial Counter Electrode Composition, Dye Selection, and Photoanode Scaffolding on DSSC Performance|Benjamin K Barnes,Joshua Orebiyi,Kausik S Das###
(267247, 267247)
 In the exploration of dye sensitizedsolar cells (D<missing VAR>SSC) a recent and increased involvement in the application ofcarbon based nanomaterials and the effects of their unique electronicproperties is being investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Influence of Carbon Nanomaterial Counter Electrode Composition, Dye Selection, and Photoanode Scaffolding on DSSC Performance|Benjamin K Barnes,Joshua Orebiyi,Kausik S Das###
(267268, 267268)
 In the exploration of dye sensitizedsolar cells (D<missing VAR>SSC) a recent and increased involvement in the application ofcarbon based nanomaterials and the effects of their unique electronicproperties is being investigated.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSC
###Influence of Carbon Nanomaterial Counter Electrode Composition, Dye Selection, and Photoanode Scaffolding on DSSC Performance|Benjamin K Barnes,Joshua Orebiyi,Kausik S Das###
(267332, 267334)
 Additionally, as the development of D<missing VAR>SSCcontinues to break way, different methods of dye selection and photoanodescaffolding are being researched to ultimately increase the Power ConversionEfficiency (PCE) of these cells.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Influence of Carbon Nanomaterial Counter Electrode Composition, Dye Selection, and Photoanode Scaffolding on DSSC Performance|Benjamin K Barnes,Joshua Orebiyi,Kausik S Das###
(267385, 267386)
 Additionally, as the development of D<missing VAR>SSCcontinues to break way, different methods of dye selection and photoanodescaffolding are being researched to ultimately increase the Power ConversionEfficiency (PCE) of these cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267451, 267454)
 Single-walled carbon nanotube (SWCNT) films are promising materials fortransparent conductive films (T<missing VAR>CFs) with potential applications in flexibledisplays, touch screens, solar cells and solid-state lighting1,2.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 1, ',', 0],[245.0, 40, 'ohm', 4],[252.0, 90, '%', 5]

C
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267477, 267477)
 Single-walled carbon nanotube (SWCNT) films are promising materials fortransparent conductive films (T<missing VAR>CFs) with potential applications in flexibledisplays, touch screens, solar cells and solid-state lighting1,2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1, ',', 0],[222.0, 40, 'ohm', 4],[229.0, 90, '%', 5]

SWCN
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267536, 267539)
 However,further reductions in resistivity and in cost of SWCNT<missing VAR> films are necessary forhigh quality T<missing VAR>CF products3.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1, ',', 1],[160.0, 40, 'ohm', 3],[167.0, 90, '%', 4]

CF
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267556, 267557)
 However,further reductions in resistivity and in cost of SWCNT<missing VAR> films are necessary forhigh quality T<missing VAR>CF products3.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1, ',', 1],[142.0, 40, 'ohm', 3],[149.0, 90, '%', 4]

SWCN
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267604, 267607)
 Here, we report an improved floating catalystchemical vapor deposition method to directly and continuously produce ultrathinand freestanding SWCNT<missing VAR> films at the hundred meter-scale.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1, ',', 2],[92.0, 40, 'ohm', 2],[99.0, 90, '%', 3]

SWCN
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267634, 267637)
 Both carbon conversionefficiency and SWCNT TCF yield are increased by three orders of magnituderelative to the conventional floating catalyst chemical vapor deposition.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1, ',', 3],[62.0, 40, 'ohm', 1],[69.0, 90, '%', 2]

CF
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267641, 267642)
 Both carbon conversionefficiency and SWCNT TCF yield are increased by three orders of magnituderelative to the conventional floating catalyst chemical vapor deposition.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1, ',', 3],[57.0, 40, 'ohm', 1],[64.0, 90, '%', 2]

SWCN
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267725, 267728)
 at 90%transmittance, representing record performance for large-scale SWCNT<missing VAR> films.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 1, ',', 5],[26.0, 40, 'ohm', 1],[19.0, 90, '%', 0]

SWCN
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267757, 267760)
 Ourwork provides a new avenue to accelerate the industrialization of SWCNT<missing VAR> filmsas T<missing VAR>CFs.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 1, ',', 6],[58.0, 40, 'ohm', 2],[51.0, 90, '%', 1]

C
###High Throughput Production of Transparent Conductive Single-Walled Carbon Nanotube Films via Advanced Floating Catalyst Chemical Vapor Deposition|Qiang Zhang,Weiya Zhou,Kewei Li,Nan Zhang,Yanchun Wang,Zhuojian Xiao,Qingxia Fan,Sishen Xie###
(267769, 267769)
 Ourwork provides a new avenue to accelerate the industrialization of SWCNT<missing VAR> filmsas T<missing VAR>CFs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 1, ',', 6],[70.0, 40, 'ohm', 2],[63.0, 90, '%', 1]

(SF)
###Magnetic dipolar interaction between correlated triplets created by singlet fission in tetracene crystals|Rui Wang,Chunfeng Zhang,Bo Zhang,Yunlong Liu,Xiaoyong Wang,Min Xiao###
(267812, 267815)
 Singlet fission (SF) can potentially break the Shockley-Queisser efficiencylimit in single-junction solar cells by splitting one photo-excited singletexciton (S1) into two triplets (2T<missing VAR>1) in organic semiconductors.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 0.008, 'GHz', 4]

(S1)
###Magnetic dipolar interaction between correlated triplets created by singlet fission in tetracene crystals|Rui Wang,Chunfeng Zhang,Bo Zhang,Yunlong Liu,Xiaoyong Wang,Min Xiao###
(267859, 267862)
 Singlet fission (SF) can potentially break the Shockley-Queisser efficiencylimit in single-junction solar cells by splitting one photo-excited singletexciton (S1) into two triplets (2T<missing VAR>1) in organic semiconductors.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 0.008, 'GHz', 4]

S1
###Magnetic dipolar interaction between correlated triplets created by singlet fission in tetracene crystals|Rui Wang,Chunfeng Zhang,Bo Zhang,Yunlong Liu,Xiaoyong Wang,Min Xiao###
(267913, 267914)
 A darkmulti-exciton (ME) state has been proposed as the intermediate connecting S1 to2T<missing VAR>1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 0.008, 'GHz', 3]

SF
###Magnetic dipolar interaction between correlated triplets created by singlet fission in tetracene crystals|Rui Wang,Chunfeng Zhang,Bo Zhang,Yunlong Liu,Xiaoyong Wang,Min Xiao###
(267990, 267991)
 Here, we report aquantitative study on the magnetic dipolar interaction between SF-inducedcorrelated triplets in tetracene crystals by monitoring quantum beats relevantto the ME sublevels at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.008, 'GHz', 1]

CH3NH3PbI3
###Domain Walls Conductivity in Hybrid Organometallic Perovskites: The Key of CH3NH3PbI3 Solar Cell High Performance|Sergey N. Rashkeev,Fedwa El-Mellouhi,Sabre Kais,Fahhad H. Alharbi###
(268189, 268197)
Domain Walls Conductivity in Hybrid Organometallic Perovskites The Key of CH3NH3PbI3 Solar Cell High Performance.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Domain Walls Conductivity in Hybrid Organometallic Perovskites: The Key of CH3NH3PbI3 Solar Cell High Performance|Sergey N. Rashkeev,Fedwa El-Mellouhi,Sabre Kais,Fahhad H. Alharbi###
(268313, 268321)
 Here, we calculated the static conductivity of chargeddomain walls in n<missing VAR>- and p<missing VAR>- doped organometallic uniaxial ferroelectricsemiconductor perovskite CH3NH3PbI3 using the Landau-Ginzburg-Devonshire (LGD)theory.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSC
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268564, 268566)
Hierarchical D<missing VAR>SSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 8, '%', 0]

TiO2
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268578, 268580)
Hierarchical D<missing VAR>SSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 8, '%', 0]

In
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268608, 268608)
 In the present work we introduce a path to the controlled construction ofD<missing VAR>SSCs based on hierarchically structured single walled, self-organized TiO2layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 8, '%', 1]

SSCs
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268636, 268638)
 In the present work we introduce a path to the controlled construction ofD<missing VAR>SSCs based on hierarchically structured single walled, self-organized TiO2layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 8, '%', 1]

TiO2
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268657, 268659)
 In the present work we introduce a path to the controlled construction ofD<missing VAR>SSCs based on hierarchically structured single walled, self-organized TiO2layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 8, '%', 1]

In
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268665, 268665)
 In a first step we describe a simple approach to selectively remove theinner detrimental shell of anodic TiO2 nanotubes (NTs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 8, '%', 2]

TiO2
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268702, 268704)
 In a first step we describe a simple approach to selectively remove theinner detrimental shell of anodic TiO2 nanotubes (NTs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 8, '%', 2]

N
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268709, 268709)
 In a first step we describe a simple approach to selectively remove theinner detrimental shell of anodic TiO2 nanotubes (NTs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 8, '%', 2]

TiO2
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268739, 268741)
 This then allowscontrolled well-defined layer-by-layer decoration of these TiO2-NT<missing VAR> walls withTiO2 nanoparticles (this in contrast to conventional TiO2 nanotubes).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 8, '%', 3]

N
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268743, 268743)
 This then allowscontrolled well-defined layer-by-layer decoration of these TiO2-NT<missing VAR> walls withTiO2 nanoparticles (this in contrast to conventional TiO2 nanotubes).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 8, '%', 3]

TiO2
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268751, 268753)
 This then allowscontrolled well-defined layer-by-layer decoration of these TiO2-NT<missing VAR> walls withTiO2 nanoparticles (this in contrast to conventional TiO2 nanotubes).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 8, '%', 3]

TiO2
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268768, 268770)
 This then allowscontrolled well-defined layer-by-layer decoration of these TiO2-NT<missing VAR> walls withTiO2 nanoparticles (this in contrast to conventional TiO2 nanotubes).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 8, '%', 3]

TiCl4
###Hierarchical DSSC structures based on single walled TiO2 nanotube arrays reach back-side illumination solar light conversion efficiency of 8%|Seulgi So,Imgon Hwang,Patrik Schmuki###
(268927, 268929)
 The beneficial effectsobserved can be ascribed to a combination of three factors  1) improvedelectronic properties of the single walled tubes themselves, 2) a furtherimprovement of the electronic properties by the defined TiCl4 treatment, and 3)a higher specific dye loading that becomes possible for the layer-by-layerdecorated single walled tubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 8, '%', 5]

(PVSCs)
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269343, 269348)
 Perovskite solar cells (PVSCs) have attracted extensive studies due to theirhigh power conversion efficiency (PCE) with low-cost in both raw material andprocesses.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269374, 269375)
 Perovskite solar cells (PVSCs) have attracted extensive studies due to theirhigh power conversion efficiency (PCE) with low-cost in both raw material andprocesses.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PVSCs
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269432, 269435)
 Among many drawbacks in PVSCs, we note the problems broughtby the use of noble metal counter electrodes (CEs) such as gold (Au) and silver(Ag).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CEs)
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269465, 269468)
 Among many drawbacks in PVSCs, we note the problems broughtby the use of noble metal counter electrodes (CEs) such as gold (Au) and silver(Ag).
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0
Abstract does not contain any numbers.

(Au)
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269476, 269478)
 Among many drawbacks in PVSCs, we note the problems broughtby the use of noble metal counter electrodes (CEs) such as gold (Au) and silver(Ag).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Ag)
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269485, 269487)
 Among many drawbacks in PVSCs, we note the problems broughtby the use of noble metal counter electrodes (CEs) such as gold (Au) and silver(Ag).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269494, 269494)
 The costly Au and Ag need high energy-consumption thermal evaporationprocess which can be made only with expensive evaporation equipment undervacuum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269498, 269498)
 The costly Au and Ag need high energy-consumption thermal evaporationprocess which can be made only with expensive evaporation equipment undervacuum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PVSCs
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269553, 269556)
 All the factors elevate the threshold of PVSCs commercialization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269597, 269597)
Carbon material, on the other hand, is a readily available electrode candidatefor the application as CE<missing VAR> in the PVSCs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PVSCs
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269604, 269607)
Carbon material, on the other hand, is a readily available electrode candidatefor the application as CE<missing VAR> in the PVSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269610, 269610)
 In this review, endeavors on PVSCs withlow-cost carbon materials will be comprehensively discussed based on differentdevice structures and carbon composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PVSCs
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269621, 269624)
 In this review, endeavors on PVSCs withlow-cost carbon materials will be comprehensively discussed based on differentdevice structures and carbon composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PVSCs
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269671, 269674)
 We believe that the PVSCs withcarbon-based CE<missing VAR> hold the promise of commercialization of this new technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Promise of Commercialization: Carbon Materials for Low-Cost Perovskite Solar Cells|Yu Cai,Lusheng Liang,Peng Gao###
(269683, 269683)
 We believe that the PVSCs withcarbon-based CE<missing VAR> hold the promise of commercialization of this new technology.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Inter-Domain Charge Transfer as a Rationale for Superior Photovoltaic Performances of Mixed Halide Lead Perovskites|Marine E. F. Bouduban,Fabrizio Giordano,Arnulf Rosspeintner,Joël Teuscher,Eric Vauthey,Michael Grätzel,Jacques-E. Moser###
(269942, 269942)
 Our results evidence the formation ofcharge transfer excitons (CTE) across the boundaries of domains of varioushalide compositions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Inter-Domain Charge Transfer as a Rationale for Superior Photovoltaic Performances of Mixed Halide Lead Perovskites|Marine E. F. Bouduban,Fabrizio Giordano,Arnulf Rosspeintner,Joël Teuscher,Eric Vauthey,Michael Grätzel,Jacques-E. Moser###
(269988, 269988)
 A global analysis of photoinduced transient Stark signalsshows that CTE evolve gradually from Br-rich to I-rich domains over tens tohundreds of picoseconds.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Inter-Domain Charge Transfer as a Rationale for Superior Photovoltaic Performances of Mixed Halide Lead Perovskites|Marine E. F. Bouduban,Fabrizio Giordano,Arnulf Rosspeintner,Joël Teuscher,Eric Vauthey,Michael Grätzel,Jacques-E. Moser###
(269998, 269998)
 A global analysis of photoinduced transient Stark signalsshows that CTE evolve gradually from Br-rich to I-rich domains over tens tohundreds of picoseconds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Inter-Domain Charge Transfer as a Rationale for Superior Photovoltaic Performances of Mixed Halide Lead Perovskites|Marine E. F. Bouduban,Fabrizio Giordano,Arnulf Rosspeintner,Joël Teuscher,Eric Vauthey,Michael Grätzel,Jacques-E. Moser###
(270004, 270004)
 A global analysis of photoinduced transient Stark signalsshows that CTE evolve gradually from Br-rich to I-rich domains over tens tohundreds of picoseconds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SnS)
###Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material|R. Jaramillo,Meng-Ju Sher,Benjamin K. Ofori-Okai,V. Steinmann,Chuanxi Yang,Katy Hartman,Keith A. Nelson,Aaron M. Lindenberg,Roy G. Gordon,T. Buonassisi###
(270209, 270212)
 Tin sulfide (SnS) isan absorber material with several clear advantages for manufacturing anddeployment, but the record power conversion efficiency remains below 5%.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 5, '%', 0],[177.0, 100, 'ps', 3]

SnS
###Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material|R. Jaramillo,Meng-Ju Sher,Benjamin K. Ofori-Okai,V. Steinmann,Chuanxi Yang,Katy Hartman,Keith A. Nelson,Aaron M. Lindenberg,Roy G. Gordon,T. Buonassisi###
(270287, 270288)
 Wereport measurements of bulk and interface minority-carrier recombination ratesin SnS thin films using optical-pump, terahertz (T<missing VAR>Hz)-probe transientphotoconductivity (T<missing VAR>PC) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 5, '%', 1],[101.0, 100, 'ps', 2]

C
###Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material|R. Jaramillo,Meng-Ju Sher,Benjamin K. Ofori-Okai,V. Steinmann,Chuanxi Yang,Katy Hartman,Keith A. Nelson,Aaron M. Lindenberg,Roy G. Gordon,T. Buonassisi###
(270318, 270318)
 Wereport measurements of bulk and interface minority-carrier recombination ratesin SnS thin films using optical-pump, terahertz (T<missing VAR>Hz)-probe transientphotoconductivity (T<missing VAR>PC) measurements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 5, '%', 1],[71.0, 100, 'ps', 2]

H2S
###Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material|R. Jaramillo,Meng-Ju Sher,Benjamin K. Ofori-Okai,V. Steinmann,Chuanxi Yang,Katy Hartman,Keith A. Nelson,Aaron M. Lindenberg,Roy G. Gordon,T. Buonassisi###
(270334, 270336)
 Post-growth thermal annealing in H2S gasincreases the minority-carrier lifetime, and oxidation of the surface reducesthe surface recombination velocity.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 5, '%', 2],[53.0, 100, 'ps', 1]

SnS
###Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material|R. Jaramillo,Meng-Ju Sher,Benjamin K. Ofori-Okai,V. Steinmann,Chuanxi Yang,Katy Hartman,Keith A. Nelson,Aaron M. Lindenberg,Roy G. Gordon,T. Buonassisi###
(270421, 270422)
 Significant improvement in SnS solar cell performancewill hinge on finding and mitigating as-yet-unknown recombination-activedefects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 5, '%', 4],[32.0, 100, 'ps', 1]

PC
###Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material|R. Jaramillo,Meng-Ju Sher,Benjamin K. Ofori-Okai,V. Steinmann,Chuanxi Yang,Katy Hartman,Keith A. Nelson,Aaron M. Lindenberg,Roy G. Gordon,T. Buonassisi###
(270472, 270473)
 We describe in detail our methodology for T<missing VAR>PC experiments, and weshare our data analysis routines as freely-available software.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 5, '%', 5],[83.0, 100, 'ps', 2]

Pb
###Room temperature dynamic correlation between methylammonium molecules in lead-iodine based perovskites: An ab-initio molecular dynamics perspective|Jonathan Lahnsteiner,Georg Kresse,Abhinav Kumar,D. D. Sarma,Cesare Franchini,Menno Bokdam###
(270602, 270602)
 The high efficiency of lead organo-metal-halide perovskite solar cells hasraised many questions about the role of the methylammonium (M<missing VAR>A) molecules inthe Pb-I framework.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Room temperature dynamic correlation between methylammonium molecules in lead-iodine based perovskites: An ab-initio molecular dynamics perspective|Jonathan Lahnsteiner,Georg Kresse,Abhinav Kumar,D. D. Sarma,Cesare Franchini,Menno Bokdam###
(270604, 270604)
 The high efficiency of lead organo-metal-halide perovskite solar cells hasraised many questions about the role of the methylammonium (M<missing VAR>A) molecules inthe Pb-I framework.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Room temperature dynamic correlation between methylammonium molecules in lead-iodine based perovskites: An ab-initio molecular dynamics perspective|Jonathan Lahnsteiner,Georg Kresse,Abhinav Kumar,D. D. Sarma,Cesare Franchini,Menno Bokdam###
(270777, 270777)
 In this phase, the rotations are slowenough to (partially) couple to neighbors via the Pb-I cage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Room temperature dynamic correlation between methylammonium molecules in lead-iodine based perovskites: An ab-initio molecular dynamics perspective|Jonathan Lahnsteiner,Georg Kresse,Abhinav Kumar,D. D. Sarma,Cesare Franchini,Menno Bokdam###
(270811, 270811)
 In this phase, the rotations are slowenough to (partially) couple to neighbors via the Pb-I cage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Room temperature dynamic correlation between methylammonium molecules in lead-iodine based perovskites: An ab-initio molecular dynamics perspective|Jonathan Lahnsteiner,Georg Kresse,Abhinav Kumar,D. D. Sarma,Cesare Franchini,Menno Bokdam###
(270813, 270813)
 In this phase, the rotations are slowenough to (partially) couple to neighbors via the Pb-I cage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Room temperature dynamic correlation between methylammonium molecules in lead-iodine based perovskites: An ab-initio molecular dynamics perspective|Jonathan Lahnsteiner,Georg Kresse,Abhinav Kumar,D. D. Sarma,Cesare Franchini,Menno Bokdam###
(270855, 270855)
 At lower and higher temperatures the motions are less correlated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Charge Transport in Dendrimer Melt using Multiscale Modeling Simulation|Saientan Bag,Manish Jain,Prabal K Maiti###
(270903, 270903)
 In this paper we present a theoretical calculation of the charge carriermobility in two different dendrimeric melt system (Dendritic phenyl azomethinewith Triphenyl amine core and Dendritic Carbazole with Cyclic Phenylazomethineas core), which have recently been reported1 to increase the efficiency ofDye-Sensitized solar cells (D<missing VAR>SSCs) by interface modification.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Charge Transport in Dendrimer Melt using Multiscale Modeling Simulation|Saientan Bag,Manish Jain,Prabal K Maiti###
(271011, 271011)
 In this paper we present a theoretical calculation of the charge carriermobility in two different dendrimeric melt system (Dendritic phenyl azomethinewith Triphenyl amine core and Dendritic Carbazole with Cyclic Phenylazomethineas core), which have recently been reported1 to increase the efficiency ofDye-Sensitized solar cells (D<missing VAR>SSCs) by interface modification.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell|M. Alaaeddine,Q. Zhu,D. Fichou,G. Izzet,J. E. Rault,N. Barrett,A. Proust,L. Tortech###
(271223, 271223)
 In this article the Wells-Dawson polyoxometalate K6[P2W18O62] is grown as aninterfacial layer between indium tin oxide and bulk heterojunction ofpoly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester(PCBM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 6, ',', 0]

K6[P2W18O62]
###Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell|M. Alaaeddine,Q. Zhu,D. Fichou,G. Izzet,J. E. Rault,N. Barrett,A. Proust,L. Tortech###
(271237, 271246)
 In this article the Wells-Dawson polyoxometalate K6[P2W18O62] is grown as aninterfacial layer between indium tin oxide and bulk heterojunction ofpoly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester(PCBM).
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: K6(P2W18O62)
0,0,0,0,0,0,0,0.7045454545454546,0,0,0,0,0,0,0.022727272727272728,0,0,0,0.06818181818181818,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.20454545454545456,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 6, ',', 0]

P3H
###Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell|M. Alaaeddine,Q. Zhu,D. Fichou,G. Izzet,J. E. Rault,N. Barrett,A. Proust,L. Tortech###
(271286, 271288)
 In this article the Wells-Dawson polyoxometalate K6[P2W18O62] is grown as aninterfacial layer between indium tin oxide and bulk heterojunction ofpoly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester(PCBM).
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 6, ',', 0]

C61
###Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell|M. Alaaeddine,Q. Zhu,D. Fichou,G. Izzet,J. E. Rault,N. Barrett,A. Proust,L. Tortech###
(271302, 271303)
 In this article the Wells-Dawson polyoxometalate K6[P2W18O62] is grown as aninterfacial layer between indium tin oxide and bulk heterojunction ofpoly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester(PCBM).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 6, ',', 0]

PCB
###Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell|M. Alaaeddine,Q. Zhu,D. Fichou,G. Izzet,J. E. Rault,N. Barrett,A. Proust,L. Tortech###
(271315, 271317)
 In this article the Wells-Dawson polyoxometalate K6[P2W18O62] is grown as aninterfacial layer between indium tin oxide and bulk heterojunction ofpoly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester(PCBM).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 6, ',', 0]

PO
###Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell|M. Alaaeddine,Q. Zhu,D. Fichou,G. Izzet,J. E. Rault,N. Barrett,A. Proust,L. Tortech###
(271330, 271331)
 The structure of the POM<missing VAR> layers depends on the thickness and shows ahighly anisotropic surface organization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 6, ',', 1]

S
###Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell|M. Alaaeddine,Q. Zhu,D. Fichou,G. Izzet,J. E. Rault,N. Barrett,A. Proust,L. Tortech###
(271392, 271392)
 The films have been characterized byatomic force microscopy and X<missing VAR>-ray photoelectron spectroscopy (X<missing VAR>PS) to gaininsight into their macroscopic organization and better understand theirelectronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 6, ',', 2]

P3H
###Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell|M. Alaaeddine,Q. Zhu,D. Fichou,G. Izzet,J. E. Rault,N. Barrett,A. Proust,L. Tortech###
(271446, 271448)
 Then, they were put at the anodic interface of aP3HT<missing VAR>PCBM<missing VAR> organic solar cell and characterized on an optical bench.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 6, ',', 3]

PCB
###Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell|M. Alaaeddine,Q. Zhu,D. Fichou,G. Izzet,J. E. Rault,N. Barrett,A. Proust,L. Tortech###
(271450, 271452)
 Then, they were put at the anodic interface of aP3HT<missing VAR>PCBM<missing VAR> organic solar cell and characterized on an optical bench.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 6, ',', 3]

Ba3
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271539, 271540)
Optoelectronic and thermoelectric properties of Ba3D<missing VAR>N (D<missing VAR>  Sb, Bi) A DFT investigation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1.35, 'and', 3],[141.0, 1.33, 'eV', 3],[268.0, 3.26, ',', 6]

N
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271542, 271542)
Optoelectronic and thermoelectric properties of Ba3D<missing VAR>N (D<missing VAR>  Sb, Bi) A DFT investigation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1.35, 'and', 3],[139.0, 1.33, 'eV', 3],[266.0, 3.26, ',', 6]

Sb
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271548, 271548)
Optoelectronic and thermoelectric properties of Ba3D<missing VAR>N (D<missing VAR>  Sb, Bi) A DFT investigation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 1.35, 'and', 3],[133.0, 1.33, 'eV', 3],[260.0, 3.26, ',', 6]

Bi
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271551, 271551)
Optoelectronic and thermoelectric properties of Ba3D<missing VAR>N (D<missing VAR>  Sb, Bi) A DFT investigation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 1.35, 'and', 3],[130.0, 1.33, 'eV', 3],[257.0, 3.26, ',', 6]

Ba3
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271586, 271587)
 We have investigated the optoelectronic and thermoelectric properties ofhexagonal antiperovskites Ba3D<missing VAR>N (D<missing VAR>  Sb, Bi) using DFT calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1.35, 'and', 2],[94.0, 1.33, 'eV', 2],[221.0, 3.26, ',', 5]

N
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271589, 271589)
 We have investigated the optoelectronic and thermoelectric properties ofhexagonal antiperovskites Ba3D<missing VAR>N (D<missing VAR>  Sb, Bi) using DFT calculations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 1.35, 'and', 2],[92.0, 1.33, 'eV', 2],[219.0, 3.26, ',', 5]

Sb
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271595, 271595)
 We have investigated the optoelectronic and thermoelectric properties ofhexagonal antiperovskites Ba3D<missing VAR>N (D<missing VAR>  Sb, Bi) using DFT calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1.35, 'and', 2],[86.0, 1.33, 'eV', 2],[213.0, 3.26, ',', 5]

Bi
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271598, 271598)
 We have investigated the optoelectronic and thermoelectric properties ofhexagonal antiperovskites Ba3D<missing VAR>N (D<missing VAR>  Sb, Bi) using DFT calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1.35, 'and', 2],[83.0, 1.33, 'eV', 2],[210.0, 3.26, ',', 5]

Ba3SbN
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271685, 271688)
 The calculated electronic structuresindicate that they are direct bandgap semiconductors and the values of bandgapsare 1.35 and 1.33 eV for Ba3SbN and Ba3BiN, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1.35, 'and', 0],[4.0, 1.33, 'eV', 0],[120.0, 3.26, ',', 3]

Ba3BiN
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271692, 271695)
 The calculated electronic structuresindicate that they are direct bandgap semiconductors and the values of bandgapsare 1.35 and 1.33 eV for Ba3SbN and Ba3BiN, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.35, 'and', 0],[11.0, 1.33, 'eV', 0],[113.0, 3.26, ',', 3]

Ba3BiN
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271734, 271737)
 The inclusion of thespin-orbit effect split the conduction bands and the band gap of Ba3BiN ismuch reduced.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1.35, 'and', 1],[53.0, 1.33, 'eV', 1],[71.0, 3.26, ',', 2]

GaAs
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271775, 271776)
 These two compounds have a high absorption coefficient, notablyhigher than that for GaAs and close to that for silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1.35, 'and', 2],[94.0, 1.33, 'eV', 2],[32.0, 3.26, ',', 1]

Ba3SbN
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271813, 271816)
 The obtained staticrefractive index is 2.8 and 3.26, for Ba3SbN and Ba3BiN, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1.35, 'and', 3],[132.0, 1.33, 'eV', 3],[5.0, 3.26, ',', 0]

Ba3BiN
###Optoelectronic and thermoelectric properties of Ba3DN (D = Sb, Bi): A DFT investigation|Enamul Haque,Md. Taslimur Rahman,M. Anwar Hossain###
(271820, 271823)
 The obtained staticrefractive index is 2.8 and 3.26, for Ba3SbN and Ba3BiN, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1.35, 'and', 3],[139.0, 1.33, 'eV', 3],[12.0, 3.26, ',', 0]

(PV)
###Finding a junction partner for candidate solar cell absorbers enargite and bournonite from electronic band and lattice matching|Suzanne K. Wallace,Keith T. Butler,Yoyo Hinuma,Aron Walsh###
(271977, 271980)
 An essential step in the development of a new photovoltaic (PV) technology ischoosing appropriate electron and hole extraction layers to make an efficientdevice.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Finding a junction partner for candidate solar cell absorbers enargite and bournonite from electronic band and lattice matching|Suzanne K. Wallace,Keith T. Butler,Yoyo Hinuma,Aron Walsh###
(272079, 272080)
 We recently proposed the minerals enargite (enargite) and bournonite(bournonite) as materials that are chemically stable with desirableoptoelectronic properties for use as the absorber layer in a thin-film PVdevice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Finding a junction partner for candidate solar cell absorbers enargite and bournonite from electronic band and lattice matching|Suzanne K. Wallace,Keith T. Butler,Yoyo Hinuma,Aron Walsh###
(272144, 272144)
 In this work, we calculatethe ionization potentials for non-polar surface terminations and proposesuitable partners for forming solar cell heterojunctions by matching theelectronic band edges to a set of candidate electrical contact materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnS2
###Finding a junction partner for candidate solar cell absorbers enargite and bournonite from electronic band and lattice matching|Suzanne K. Wallace,Keith T. Butler,Yoyo Hinuma,Aron Walsh###
(272300, 272302)
 Thistwo-step screening procedure identified a range of unconventional candidatecontact materials including SnS2, ZnTe, WO3, and Bi2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Finding a junction partner for candidate solar cell absorbers enargite and bournonite from electronic band and lattice matching|Suzanne K. Wallace,Keith T. Butler,Yoyo Hinuma,Aron Walsh###
(272305, 272306)
 Thistwo-step screening procedure identified a range of unconventional candidatecontact materials including SnS2, ZnTe, WO3, and Bi2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WO3
###Finding a junction partner for candidate solar cell absorbers enargite and bournonite from electronic band and lattice matching|Suzanne K. Wallace,Keith T. Butler,Yoyo Hinuma,Aron Walsh###
(272309, 272311)
 Thistwo-step screening procedure identified a range of unconventional candidatecontact materials including SnS2, ZnTe, WO3, and Bi2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2O3
###Finding a junction partner for candidate solar cell absorbers enargite and bournonite from electronic band and lattice matching|Suzanne K. Wallace,Keith T. Butler,Yoyo Hinuma,Aron Walsh###
(272316, 272319)
 Thistwo-step screening procedure identified a range of unconventional candidatecontact materials including SnS2, ZnTe, WO3, and Bi2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Crystallization-Arrested Viscoelastic Phase Separation in Semiconducting Polymer Gels|Jing He,Xiaoqing Kong,Yuhao Wang,Michael Delaney,Dilhan M. Kalyon,Stephanie S. Lee###
(272444, 272446)
 Upon rapid cooling, solutionsof regioregular poly(3-hexylthiophene) (RR-P3HT) in ortho-dichlorobenzeneformed thermoreversible gels.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 45, '%', 5]

P3H
###Crystallization-Arrested Viscoelastic Phase Separation in Semiconducting Polymer Gels|Jing He,Xiaoqing Kong,Yuhao Wang,Michael Delaney,Dilhan M. Kalyon,Stephanie S. Lee###
(272535, 272537)
 The phase separation process arrested prematurely during theformation of micron-sized solvent-rich holes within the RR-P3HT<missing VAR> matrix due tointrachain crystallization.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 45, '%', 3]

P3H
###Crystallization-Arrested Viscoelastic Phase Separation in Semiconducting Polymer Gels|Jing He,Xiaoqing Kong,Yuhao Wang,Michael Delaney,Dilhan M. Kalyon,Stephanie S. Lee###
(272568, 272570)
 Cryogen-based scanning electron microscopy of RRP3HT<missing VAR> gels revealed the existence of an interfibrillar network exhibitingnano-sized pores.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 45, '%', 2]

C61
###Crystallization-Arrested Viscoelastic Phase Separation in Semiconducting Polymer Gels|Jing He,Xiaoqing Kong,Yuhao Wang,Michael Delaney,Dilhan M. Kalyon,Stephanie S. Lee###
(272634, 272635)
 Remarkably, these networks formed to equal gel strengths whena third component, either small molecule phenyl C61 butyric acid methyl ester(PCBM) or non-crystallizing regiorandom (Rra)-P3HT<missing VAR>, was added to the solution.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 45, '%', 1]

PCB
###Crystallization-Arrested Viscoelastic Phase Separation in Semiconducting Polymer Gels|Jing He,Xiaoqing Kong,Yuhao Wang,Michael Delaney,Dilhan M. Kalyon,Stephanie S. Lee###
(272647, 272649)
 Remarkably, these networks formed to equal gel strengths whena third component, either small molecule phenyl C61 butyric acid methyl ester(PCBM) or non-crystallizing regiorandom (Rra)-P3HT<missing VAR>, was added to the solution.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 45, '%', 1]

P3H
###Crystallization-Arrested Viscoelastic Phase Separation in Semiconducting Polymer Gels|Jing He,Xiaoqing Kong,Yuhao Wang,Michael Delaney,Dilhan M. Kalyon,Stephanie S. Lee###
(272665, 272667)
 Remarkably, these networks formed to equal gel strengths whena third component, either small molecule phenyl C61 butyric acid methyl ester(PCBM) or non-crystallizing regiorandom (Rra)-P3HT<missing VAR>, was added to the solution.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 45, '%', 1]

InSe
###Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals|Chengmei Zhong,Vinod K. Sangwan,Joohoon Kang,Jan Luxa,Zdeněk Sofer,Mark C. Hersam,Emily A. Weiss###
(272755, 272756)
Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(InSe)
###Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals|Chengmei Zhong,Vinod K. Sangwan,Joohoon Kang,Jan Luxa,Zdeněk Sofer,Mark C. Hersam,Emily A. Weiss###
(272767, 272770)
 Layered indium selenide (InSe) is a van der Waals solid that has emerged as apromising material for high-performance ultrathin solar cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSe
###Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals|Chengmei Zhong,Vinod K. Sangwan,Joohoon Kang,Jan Luxa,Zdeněk Sofer,Mark C. Hersam,Emily A. Weiss###
(272863, 272864)
 Theoptoelectronic parameters that are critical to photoconversion efficiencies,such as hot carrier lifetime and surface recombination velocity, are howeverlargely unexplored in InSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSe
###Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals|Chengmei Zhong,Vinod K. Sangwan,Joohoon Kang,Jan Luxa,Zdeněk Sofer,Mark C. Hersam,Emily A. Weiss###
(272883, 272884)
 Here, these key photophysical properties of layeredInSe are measured with femtosecond transient reflection spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSe
###Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals|Chengmei Zhong,Vinod K. Sangwan,Joohoon Kang,Jan Luxa,Zdeněk Sofer,Mark C. Hersam,Emily A. Weiss###
(273049, 273050)
 The extracted surface recombinationvelocity is approximately an order of magnitude larger than that formethylammonium lead-iodide perovskites, suggesting that surface recombinationis a principal source of photocarrier loss in InSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSe
###Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals|Chengmei Zhong,Vinod K. Sangwan,Joohoon Kang,Jan Luxa,Zdeněk Sofer,Mark C. Hersam,Emily A. Weiss###
(273078, 273079)
 The extracted ambipolardiffusion coefficient is consistent with previously reported values of InSecarrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Efficient Nano Antenna for Photonic Devices|Vishal K. Doltani,Fahim A Umrani,Riaz A. Soomro###
(273241, 273242)
 The design isanalyzed by FIT<missing VAR> based CST<missing VAR> Software package by which Directivity and Gain of theantenna are computed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 500, 'nm', 3]

CS
###Efficient Nano Antenna for Photonic Devices|Vishal K. Doltani,Fahim A Umrani,Riaz A. Soomro###
(273247, 273248)
 The design isanalyzed by FIT<missing VAR> based CST<missing VAR> Software package by which Directivity and Gain of theantenna are computed.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 500, 'nm', 3]

In
###Exciton propagation and halo formation in two-dimensional materials|Raul Perea-Causin,Samuel Brem,Roberto Rosati,Roland Jago,Marvin Kulig,Jonas D. Ziegler,Jonas Zipfel,Alexey Chernikov,Ermin Malic###
(273509, 273509)
 In thiscontext, transition metal dichalcogenides (TMDs) have received much attention.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Exciton propagation and halo formation in two-dimensional materials|Raul Perea-Causin,Samuel Brem,Roberto Rosati,Roland Jago,Marvin Kulig,Jonas D. Ziegler,Jonas Zipfel,Alexey Chernikov,Ermin Malic###
(273526, 273526)
 In thiscontext, transition metal dichalcogenides (TMDs) have received much attention.
EXCEPTION 3: IndexError for Ds
In
Abstract does not contain any numbers.

O
###The influence of impurities on the charge carrier mobility of small molecule organic semiconductors|Pascal Friederich,Artem Fediai,Jing Li,Anirban Mondal,Naresh B. Kotadiya,Franz Symalla,Gert-Jan A. H. Wetzelaer,Denis Andrienko,Xavier Blase,David Beljonne,Paul W. M. Blom,Jean-Luc Brédas,Wolfgang Wenzel###
(274239, 274239)
 Amorphous organic semiconductors based on small molecules and polymers areused in many applications, most prominently organic light emitting diodes(OLEDs) and organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###The influence of impurities on the charge carrier mobility of small molecule organic semiconductors|Pascal Friederich,Artem Fediai,Jing Li,Anirban Mondal,Naresh B. Kotadiya,Franz Symalla,Gert-Jan A. H. Wetzelaer,Denis Andrienko,Xavier Blase,David Beljonne,Paul W. M. Blom,Jean-Luc Brédas,Wolfgang Wenzel###
(274242, 274242)
 Amorphous organic semiconductors based on small molecules and polymers areused in many applications, most prominently organic light emitting diodes(OLEDs) and organic solar cells.
EXCEPTION 3: IndexError for Ds
Abstract does not contain any numbers.

In
###A highly integrated, stand-alone photoelectrochemical device for large-scale solar hydrogen production|Minoh Lee,Bugra Turan,Jan-Philipp Becker,Katharina Welter,Benjamin Klingebiel,Elmar Neumann,Yoo Jung Sohn,Tsvetelina Merdzhanova,Thomas Kirchartz,Friedhelm Finger,Uwe Rau,Stefan Haas###
(274937, 274937)
 Inorder for the technology to make a sizeable impact on the energy transition,scaled up devices made of inexpensive and earth abundant materials must bedeveloped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 4.67, '%', 2],[164.0, 5.33, '%', 2],[209.0, 3, 'D', 3]

In
###A highly integrated, stand-alone photoelectrochemical device for large-scale solar hydrogen production|Minoh Lee,Bugra Turan,Jan-Philipp Becker,Katharina Welter,Benjamin Klingebiel,Elmar Neumann,Yoo Jung Sohn,Tsvetelina Merdzhanova,Thomas Kirchartz,Friedhelm Finger,Uwe Rau,Stefan Haas###
(274996, 274996)
 In this work, we demonstrate a scalable (64 cm2 aperture area)artificial photoelectrochemical device composed of triple-junction thin-filmsilicon solar cells in conjunction with an electrodeposited bifunctional nickeliron molybdenum water splitting catalyst.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 4.67, '%', 1],[105.0, 5.33, '%', 1],[150.0, 3, 'D', 2]

H
###Quantifying Charge Carrier Mobilities and Recombination Rates in Metal Halide Perovskites from Time-Resolved Microwave Photo-conductivity Measurements|Tom J. Savenije,Dengyang Guo,Valentina M. Caselli,Eline M. Hutter###
(275233, 275233)
 The unprecedented rise in power conversion efficiency of solar cells based onmetal halide perovskites (M<missing VAR>HPs) has led to enormous research effort tounderstand their photo-physical properties.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantifying Charge Carrier Mobilities and Recombination Rates in Metal Halide Perovskites from Time-Resolved Microwave Photo-conductivity Measurements|Tom J. Savenije,Dengyang Guo,Valentina M. Caselli,Eline M. Hutter###
(275263, 275263)
 In this paper, we review theprogress in understanding the mobility and recombination of photo-generatedcharge carriers from nanosecond to microsecond time scales, monitored usingelectrodeless transient photoconductivity techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantifying Charge Carrier Mobilities and Recombination Rates in Metal Halide Perovskites from Time-Resolved Microwave Photo-conductivity Measurements|Tom J. Savenije,Dengyang Guo,Valentina M. Caselli,Eline M. Hutter###
(275329, 275329)
 In addition, we present akinetic model to obtain rate constants from transient data recorded using awide range of laser intensities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantifying Charge Carrier Mobilities and Recombination Rates in Metal Halide Perovskites from Time-Resolved Microwave Photo-conductivity Measurements|Tom J. Savenije,Dengyang Guo,Valentina M. Caselli,Eline M. Hutter###
(275382, 275382)
 For various M<missing VAR>HPs the temperature dependence ofthe mobilities and recombination rates are evaluated.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantifying Charge Carrier Mobilities and Recombination Rates in Metal Halide Perovskites from Time-Resolved Microwave Photo-conductivity Measurements|Tom J. Savenije,Dengyang Guo,Valentina M. Caselli,Eline M. Hutter###
(275480, 275480)
 Finally, we discussphoto-physical properties of M<missing VAR>HPs that are not yet fully understood, and makerecommendations for future research directions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Theory of shift current in Anderson insulator|Hiroaki Ishizuka,Naoto Nagaosa###
(275598, 275598)
 In contrast, it is unknown whether thelocalized wavefunctions support the dc photocurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li2TeO3
###First principles study of optical and tunable electronic properties of crystalline Li2TeO3|Aditya Dey###
(275862, 275866)
First principles study of optical and tunable electronic properties of crystalline Li2TeO3.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li2TeO3
###First principles study of optical and tunable electronic properties of crystalline Li2TeO3|Aditya Dey###
(275883, 275887)
 The optical and electronic properties of crystalline Li2TeO3, which is atellurite glass, is studied in the framework of density functional theory (DFT)implemented software SIESTA.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###First principles study of optical and tunable electronic properties of crystalline Li2TeO3|Aditya Dey###
(275931, 275932)
 The optical and electronic properties of crystalline Li2TeO3, which is atellurite glass, is studied in the framework of density functional theory (DFT)implemented software SIESTA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li2TeO3
###First principles study of optical and tunable electronic properties of crystalline Li2TeO3|Aditya Dey###
(276078, 276082)
 The optical properties studied tells that Li2TeO3 can be apromising material to be used as a hole transport material (HTM) for developingefficient perovskite solar cell including other applications as well.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###First principles study of optical and tunable electronic properties of crystalline Li2TeO3|Aditya Dey###
(276112, 276112)
 The optical properties studied tells that Li2TeO3 can be apromising material to be used as a hole transport material (HTM) for developingefficient perovskite solar cell including other applications as well.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Microscopic observation of carrier-transport dynamics in quantum-structure solar cells using a time-of-flight technique|Kasidit Toprasertpong,Naofumi Kasamatsu,Hiromasa Fujii,Tomoyuki Kada,Shigeo Asahi,Yunpeng Wang,Kentaroh Watanabe,Masakazu Sugiyama,Takashi Kita,Yoshiaki Nakano###
(276184, 276184)
 In this study, we propose a carrier time-of-flight technique to evaluate thecarrier transport time across a quantum structure in an active region of solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Polarization Origin of Photoconductivity in MAPbI3 Thin Films|Rohit Saraf,Cecile Saguy,Vivek Maheshwari,Hemaprabha Elangovan,Yachin Ivry###
(276472, 276474)
Polarization Origin of Photoconductivity in M<missing VAR>APbI3 Thin Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(HHP)
###Polarization Origin of Photoconductivity in MAPbI3 Thin Films|Rohit Saraf,Cecile Saguy,Vivek Maheshwari,Hemaprabha Elangovan,Yachin Ivry###
(276487, 276491)
 Hybrid-halide perovskite (HHP) films exhibit exceptional photo-electricproperties.
Featurization successful!
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HHP
###Polarization Origin of Photoconductivity in MAPbI3 Thin Films|Rohit Saraf,Cecile Saguy,Vivek Maheshwari,Hemaprabha Elangovan,Yachin Ivry###
(276630, 276632)
 Here, we combinedmicroscale and device-scale characterization to demonstrate thatpolarization-assisted conductivity governs photoconductivity in thin HHP films.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HHP
###Polarization Origin of Photoconductivity in MAPbI3 Thin Films|Rohit Saraf,Cecile Saguy,Vivek Maheshwari,Hemaprabha Elangovan,Yachin Ivry###
(276801, 276803)
 Understanding the originof photoelectric activity in HHP allows designing devices with enhancedfunctionality and lays the grounds for photoelectric memristive devices.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Si)
###Change in Tetracene Polymorphism Facilitates Triplet Transfer in Singlet Fission-Sensitized Silicon Solar Cells|Benjamin Daiber,Sourav Maiti,Silvia Ferro,Joris Bodin,Alyssa F. J. van den Boom,Stefan L. Luxembourg,Sachin Kinge,Sidharam Pujari,Han Zuilhof,Laurens D. A. Siebbeles,Bruno Ehrler###
(276917, 276919)
 If these triplet excitons can be effectively transferred into silicon(Si) then additional photocurrent can be generated from photons above thebandgap of Si.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 215, 'ns', 4]

Si
###Change in Tetracene Polymorphism Facilitates Triplet Transfer in Singlet Fission-Sensitized Silicon Solar Cells|Benjamin Daiber,Sourav Maiti,Silvia Ferro,Joris Bodin,Alyssa F. J. van den Boom,Stefan L. Luxembourg,Sachin Kinge,Sidharam Pujari,Han Zuilhof,Laurens D. A. Siebbeles,Bruno Ehrler###
(276946, 276946)
 If these triplet excitons can be effectively transferred into silicon(Si) then additional photocurrent can be generated from photons above thebandgap of Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 215, 'ns', 4]

Si
###Change in Tetracene Polymorphism Facilitates Triplet Transfer in Singlet Fission-Sensitized Silicon Solar Cells|Benjamin Daiber,Sourav Maiti,Silvia Ferro,Joris Bodin,Alyssa F. J. van den Boom,Stefan L. Luxembourg,Sachin Kinge,Sidharam Pujari,Han Zuilhof,Laurens D. A. Siebbeles,Bruno Ehrler###
(276974, 276974)
 This could alleviate the thermalization loss and increase theefficiency of conventional Si solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 215, 'ns', 3]

Si
###Change in Tetracene Polymorphism Facilitates Triplet Transfer in Singlet Fission-Sensitized Silicon Solar Cells|Benjamin Daiber,Sourav Maiti,Silvia Ferro,Joris Bodin,Alyssa F. J. van den Boom,Stefan L. Luxembourg,Sachin Kinge,Sidharam Pujari,Han Zuilhof,Laurens D. A. Siebbeles,Bruno Ehrler###
(277008, 277008)
 Here we show that a change in thepolymorphism of tetracene deposited on Si due to air exposure, facilitatestriplet transfer from tetracene into Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 215, 'ns', 2]

Si
###Change in Tetracene Polymorphism Facilitates Triplet Transfer in Singlet Fission-Sensitized Silicon Solar Cells|Benjamin Daiber,Sourav Maiti,Silvia Ferro,Joris Bodin,Alyssa F. J. van den Boom,Stefan L. Luxembourg,Sachin Kinge,Sidharam Pujari,Han Zuilhof,Laurens D. A. Siebbeles,Bruno Ehrler###
(277032, 277032)
 Here we show that a change in thepolymorphism of tetracene deposited on Si due to air exposure, facilitatestriplet transfer from tetracene into Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 215, 'ns', 2]

Si
###Change in Tetracene Polymorphism Facilitates Triplet Transfer in Singlet Fission-Sensitized Silicon Solar Cells|Benjamin Daiber,Sourav Maiti,Silvia Ferro,Joris Bodin,Alyssa F. J. van den Boom,Stefan L. Luxembourg,Sachin Kinge,Sidharam Pujari,Han Zuilhof,Laurens D. A. Siebbeles,Bruno Ehrler###
(277112, 277112)
 Thedecay of tetracene delayed photoluminescence was used to determine a triplettransfer time of 215 ns and a maximum yield of triplet transfer into Si of 50%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 215, 'ns', 0]

PbBr3
###Effect of Precursor Stoichiometry on the Performance and Stability of MAPbBr3 Photovoltaic Devices|Lukas M. Falk,Katelyn P. Goetz,Vincent Lami,Qingzhi An,Paul Fassl,Jonas Herkel,Fabian Thome,Alexander D. Taylor,Fabian Paulus,Yana Vaynzof###
(277203, 277205)
Effect of Precursor Stoichiometry on the Performance and Stability of M<missing VAR>APbBr3 Photovoltaic Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs2AgBiBr6
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277561, 277566)
Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT<missing VAR> as the Charge Transport Layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 600, 'nm', 2],[166.0, 4.48, '%', 2],[194.0, 3.3, 'eV', 3],[197.0, 4.6, 'eV', 3],[300.0, 5.2, 'eV', 5],[303.0, 1, 'E', 5],[307.0, -3, ',', 5]

ZnO
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277578, 277579)
Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT<missing VAR> as the Charge Transport Layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 600, 'nm', 2],[153.0, 4.48, '%', 2],[181.0, 3.3, 'eV', 3],[184.0, 4.6, 'eV', 3],[287.0, 5.2, 'eV', 5],[290.0, 1, 'E', 5],[294.0, -3, ',', 5]

P3H
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277585, 277587)
Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT<missing VAR> as the Charge Transport Layers.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 600, 'nm', 2],[145.0, 4.48, '%', 2],[173.0, 3.3, 'eV', 3],[176.0, 4.6, 'eV', 3],[279.0, 5.2, 'eV', 5],[282.0, 1, 'E', 5],[286.0, -3, ',', 5]

(PSC)
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277631, 277635)
 We carried out simulative investigations on a non-toxic, lead-free perovskitesolar cell (PSC), where Cs2AgBiBr6, P3HT<missing VAR>, ZnO nanorod, and C were utilized asthe absorber layer, hole transport layer, electron transport layer, and backcontact, respectively.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 600, 'nm', 1],[97.0, 4.48, '%', 1],[125.0, 3.3, 'eV', 2],[128.0, 4.6, 'eV', 2],[231.0, 5.2, 'eV', 4],[234.0, 1, 'E', 4],[238.0, -3, ',', 4]

Cs2AgBiBr6
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277640, 277645)
 We carried out simulative investigations on a non-toxic, lead-free perovskitesolar cell (PSC), where Cs2AgBiBr6, P3HT<missing VAR>, ZnO nanorod, and C were utilized asthe absorber layer, hole transport layer, electron transport layer, and backcontact, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 600, 'nm', 1],[87.0, 4.48, '%', 1],[115.0, 3.3, 'eV', 2],[118.0, 4.6, 'eV', 2],[221.0, 5.2, 'eV', 4],[224.0, 1, 'E', 4],[228.0, -3, ',', 4]

P3H
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277648, 277650)
 We carried out simulative investigations on a non-toxic, lead-free perovskitesolar cell (PSC), where Cs2AgBiBr6, P3HT<missing VAR>, ZnO nanorod, and C were utilized asthe absorber layer, hole transport layer, electron transport layer, and backcontact, respectively.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 600, 'nm', 1],[82.0, 4.48, '%', 1],[110.0, 3.3, 'eV', 2],[113.0, 4.6, 'eV', 2],[216.0, 5.2, 'eV', 4],[219.0, 1, 'E', 4],[223.0, -3, ',', 4]

ZnO
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277654, 277655)
 We carried out simulative investigations on a non-toxic, lead-free perovskitesolar cell (PSC), where Cs2AgBiBr6, P3HT<missing VAR>, ZnO nanorod, and C were utilized asthe absorber layer, hole transport layer, electron transport layer, and backcontact, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 600, 'nm', 1],[77.0, 4.48, '%', 1],[105.0, 3.3, 'eV', 2],[108.0, 4.6, 'eV', 2],[211.0, 5.2, 'eV', 4],[214.0, 1, 'E', 4],[218.0, -3, ',', 4]

C
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277662, 277662)
 We carried out simulative investigations on a non-toxic, lead-free perovskitesolar cell (PSC), where Cs2AgBiBr6, P3HT<missing VAR>, ZnO nanorod, and C were utilized asthe absorber layer, hole transport layer, electron transport layer, and backcontact, respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 600, 'nm', 1],[70.0, 4.48, '%', 1],[98.0, 3.3, 'eV', 2],[101.0, 4.6, 'eV', 2],[204.0, 5.2, 'eV', 4],[207.0, 1, 'E', 4],[211.0, -3, ',', 4]

At
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277703, 277703)
 At 600 nm optimum absorber thickness, the deviceachieved a maximum power conversion efficiency of 4.48%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 600, 'nm', 0],[29.0, 4.48, '%', 0],[57.0, 3.3, 'eV', 1],[60.0, 4.6, 'eV', 1],[163.0, 5.2, 'eV', 3],[166.0, 1, 'E', 3],[170.0, -3, ',', 3]

PSC
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277738, 277740)
 The PSC operatedoptimally when the electron affinities were set at 3.3 eV and 4.6 eV for P3HT<missing VAR>and ZnO nanorod, respectively.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 600, 'nm', 1],[6.0, 4.48, '%', 1],[20.0, 3.3, 'eV', 0],[23.0, 4.6, 'eV', 0],[126.0, 5.2, 'eV', 2],[129.0, 1, 'E', 2],[133.0, -3, ',', 2]

P3H
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277767, 277769)
 The PSC operatedoptimally when the electron affinities were set at 3.3 eV and 4.6 eV for P3HT<missing VAR>and ZnO nanorod, respectively.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 600, 'nm', 1],[35.0, 4.48, '%', 1],[7.0, 3.3, 'eV', 0],[4.0, 4.6, 'eV', 0],[97.0, 5.2, 'eV', 2],[100.0, 1, 'E', 2],[104.0, -3, ',', 2]

ZnO
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277775, 277776)
 The PSC operatedoptimally when the electron affinities were set at 3.3 eV and 4.6 eV for P3HT<missing VAR>and ZnO nanorod, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 600, 'nm', 1],[43.0, 4.48, '%', 1],[15.0, 3.3, 'eV', 0],[12.0, 4.6, 'eV', 0],[90.0, 5.2, 'eV', 2],[93.0, 1, 'E', 2],[97.0, -3, ',', 2]

P3H
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277802, 277804)
 Moreover, the hole mobility and acceptorconcentration of P3HT<missing VAR> should be weighed during the choosing of appropriatedoping additives and doping levels.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 600, 'nm', 2],[70.0, 4.48, '%', 2],[42.0, 3.3, 'eV', 1],[39.0, 4.6, 'eV', 1],[62.0, 5.2, 'eV', 1],[65.0, 1, 'E', 1],[69.0, -3, ',', 1]

PSC
###Numerical Simulation of Cs2AgBiBr6-based Perovskite Solar Cell with ZnO Nanorod and P3HT as the Charge Transport Layers|Intekhab Alam,Rahat Mollick,Md Ali Ashraf###
(277952, 277954)
 Overall, thisstudys<missing VAR> simulation results will provide insightful guidance towards fabricatingan environmentally benign PSC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 600, 'nm', 5],[220.0, 4.48, '%', 5],[192.0, 3.3, 'eV', 4],[189.0, 4.6, 'eV', 4],[86.0, 5.2, 'eV', 2],[83.0, 1, 'E', 2],[79.0, -3, ',', 2]

PV
###The interesting case of a single-junction solar cell in outer space|Ido Frenkel,Avi Niv###
(278302, 278303)
 Unlike formerattempts to thermodynamically justify the PV effect, our formalism applies to awork producing system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3Pb(I0.8Br0.2)3
###Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells|Zhifa Liu,Johanna Siekmann,Benjamin Klingebiel,Uwe Rau,Thomas Kirchartz###
(278357, 278370)
Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.20000000000000004,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1.35, 'V', 0],[180.0, 1.35, 'V', 3],[242.0, 18.6, '%', 4],[270.0, 1.085, 'V', 5]

In
###Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells|Zhifa Liu,Johanna Siekmann,Benjamin Klingebiel,Uwe Rau,Thomas Kirchartz###
(278430, 278430)
 In addition, to high bulk quality, good interfaces andgood energy level alignment for majority carriers at charge transportlayer-absorber interfaces are crucial to minimize non-radiative recombinationpathways.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 1.35, 'V', 2],[120.0, 1.35, 'V', 1],[182.0, 18.6, '%', 2],[210.0, 1.085, 'V', 3]

CH3NH3Pb(I0.8Br0.2)3
###Interface Optimization via Fullerene Blends Enables Open-Circuit Voltages of 1.35 V in CH3NH3Pb(I0.8Br0.2)3 Solar Cells|Zhifa Liu,Johanna Siekmann,Benjamin Klingebiel,Uwe Rau,Thomas Kirchartz###
(278554, 278567)
 By tuning the lowest-unoccupied molecular-orbital of electrontransport layers via the use of different fullerenes and fullerene blends, wedemonstrate open-circuit voltages exceeding 1.35 V in CH3NH3Pb(I0.8Br0.2)3device.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.20000000000000004,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1.35, 'V', 3],[4.0, 1.35, 'V', 0],[45.0, 18.6, '%', 1],[73.0, 1.085, 'V', 2]

Ds
###Ion Mobility Independent Large Signal Switching of Perovskite Devices|Saketh Tirupati,Abhimanyu Singareddy,Dhyana Sivadas,Pradeep R. Nair###
(279041, 279041)
 These results have interesting implications towards theunderstanding and optimization of perovskite based electronic devices,including solar cells and LEDs.
EXCEPTION 3: IndexError for Ds
Abstract does not contain any numbers.

In
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279125, 279125)
 In the present work, we report theelectronic and optical properties of chalcogenide perovskites AZrS3 (ACa,Sr, Ba) by using the density functional theory (DFT) and many-body perturbationtheory (M<missing VAR>BPT<missing VAR> viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrS3
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279156, 279158)
 In the present work, we report theelectronic and optical properties of chalcogenide perovskites AZrS3 (ACa,Sr, Ba) by using the density functional theory (DFT) and many-body perturbationtheory (M<missing VAR>BPT<missing VAR> viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279162, 279162)
 In the present work, we report theelectronic and optical properties of chalcogenide perovskites AZrS3 (ACa,Sr, Ba) by using the density functional theory (DFT) and many-body perturbationtheory (M<missing VAR>BPT<missing VAR> viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279166, 279166)
 In the present work, we report theelectronic and optical properties of chalcogenide perovskites AZrS3 (ACa,Sr, Ba) by using the density functional theory (DFT) and many-body perturbationtheory (M<missing VAR>BPT<missing VAR> viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279169, 279169)
 In the present work, we report theelectronic and optical properties of chalcogenide perovskites AZrS3 (ACa,Sr, Ba) by using the density functional theory (DFT) and many-body perturbationtheory (M<missing VAR>BPT<missing VAR> viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BP
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279203, 279204)
 In the present work, we report theelectronic and optical properties of chalcogenide perovskites AZrS3 (ACa,Sr, Ba) by using the density functional theory (DFT) and many-body perturbationtheory (M<missing VAR>BPT<missing VAR> viz.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W0
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279212, 279213)
 G<missing VAR>0W0 and BSE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279217, 279218)
 G<missing VAR>0W0 and BSE).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279254, 279254)
 The exciton binding energy (E<missing VAR>textrmB) isfound to be larger than that of the halide perovskites, as the ioniccontribution to dielectric screening is negligible in the former.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory|Manish Kumar,Arunima Singh,Deepika Gill,Saswata Bhattacharya###
(279382, 279382)
 Finally, on the basis of direct gap and absorptioncoefficient, the estimated spectroscopic limited maximum efficiency (SLME) ofthe solar cells is large and suggests the applicability of these perovskites inphotovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CEs)
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279504, 279507)
 Thiswork deciphers the origin of the catalytic activity of counter-electrodes(CEs)/current collectors made of self-standing carbon nanotubes fibers (CNTfs)using Co(+2)/Co(+3) redox couple electrolytes.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0
Abstract does not contain any numbers.

CN
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279528, 279529)
 Thiswork deciphers the origin of the catalytic activity of counter-electrodes(CEs)/current collectors made of self-standing carbon nanotubes fibers (CNTfs)using Co(+2)/Co(+3) redox couple electrolytes.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279536, 279536)
 Thiswork deciphers the origin of the catalytic activity of counter-electrodes(CEs)/current collectors made of self-standing carbon nanotubes fibers (CNTfs)using Co(+2)/Co(+3) redox couple electrolytes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279542, 279542)
 Thiswork deciphers the origin of the catalytic activity of counter-electrodes(CEs)/current collectors made of self-standing carbon nanotubes fibers (CNTfs)using Co(+2)/Co(+3) redox couple electrolytes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CEs
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279602, 279603)
 This is based oncomprehensive electrochemical and spectroscopic characterizations of fresh andused electrodes applied to symmetric electrochemical cells using platinum-basedCEs as a reference.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0
Abstract does not contain any numbers.

As
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279612, 279612)
 As the most relevant findings, two straight relationshipswere established i) the limiting current and stability increase rapidly withsurface concentration of oxygen-containing functional groups, and ii) thecatalytic potential is inversily related to the amount of residual metallic Fecatalyst nanoparticles interspersed in the CNTf network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279699, 279699)
 As the most relevant findings, two straight relationshipswere established i) the limiting current and stability increase rapidly withsurface concentration of oxygen-containing functional groups, and ii) thecatalytic potential is inversily related to the amount of residual metallic Fecatalyst nanoparticles interspersed in the CNTf network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279712, 279713)
 As the most relevant findings, two straight relationshipswere established i) the limiting current and stability increase rapidly withsurface concentration of oxygen-containing functional groups, and ii) thecatalytic potential is inversily related to the amount of residual metallic Fecatalyst nanoparticles interspersed in the CNTf network.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279779, 279780)
 Finally, the fine tuneof the metallic nanoparticle content and the degree of functionalizationenabled fabrication of efficient and stable dye-sensitized solar cells withcobalt electrolytes and CNTf-CE<missing VAR> outperforming those with reference Pt-CEs.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279783, 279783)
 Finally, the fine tuneof the metallic nanoparticle content and the degree of functionalizationenabled fabrication of efficient and stable dye-sensitized solar cells withcobalt electrolytes and CNTf-CE<missing VAR> outperforming those with reference Pt-CEs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279794, 279794)
 Finally, the fine tuneof the metallic nanoparticle content and the degree of functionalizationenabled fabrication of efficient and stable dye-sensitized solar cells withcobalt electrolytes and CNTf-CE<missing VAR> outperforming those with reference Pt-CEs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CEs
###Origin of the electrocatalytic activity in carbon nanotube fiber counter-electrodes for solar-energy conversion|Alba Martínez-Muíño,Moumita Rana,Juan J. Vilatela,Rubén D. Costa###
(279796, 279797)
 Finally, the fine tuneof the metallic nanoparticle content and the degree of functionalizationenabled fabrication of efficient and stable dye-sensitized solar cells withcobalt electrolytes and CNTf-CE<missing VAR> outperforming those with reference Pt-CEs.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations|Malik Hassanaly,Hariswaran Sitaraman,Kevin L. Schulte,Aaron J. Ptak,John Simon,Kevin Udwary,Jacob H. Leach,Heather Splawn###
(280180, 280181)
Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HVP
###Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations|Malik Hassanaly,Hariswaran Sitaraman,Kevin L. Schulte,Aaron J. Ptak,John Simon,Kevin Udwary,Jacob H. Leach,Heather Splawn###
(280211, 280213)
 Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid inthe cost reduction of III-V materials and devices manufacturing, particularlyhigh-efficiency solar cells for space and terrestrial applications.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations|Malik Hassanaly,Hariswaran Sitaraman,Kevin L. Schulte,Aaron J. Ptak,John Simon,Kevin Udwary,Jacob H. Leach,Heather Splawn###
(280242, 280244)
 Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid inthe cost reduction of III-V materials and devices manufacturing, particularlyhigh-efficiency solar cells for space and terrestrial applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations|Malik Hassanaly,Hariswaran Sitaraman,Kevin L. Schulte,Aaron J. Ptak,John Simon,Kevin Udwary,Jacob H. Leach,Heather Splawn###
(280246, 280246)
 Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid inthe cost reduction of III-V materials and devices manufacturing, particularlyhigh-efficiency solar cells for space and terrestrial applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations|Malik Hassanaly,Hariswaran Sitaraman,Kevin L. Schulte,Aaron J. Ptak,John Simon,Kevin Udwary,Jacob H. Leach,Heather Splawn###
(280396, 280396)
 In this work, we derive a kinetic model using experimentaldata and integrate it into a computational fluid dynamics simulation of an HVPE<missing VAR>growth reactor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HVP
###Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations|Malik Hassanaly,Hariswaran Sitaraman,Kevin L. Schulte,Aaron J. Ptak,John Simon,Kevin Udwary,Jacob H. Leach,Heather Splawn###
(280442, 280444)
 In this work, we derive a kinetic model using experimentaldata and integrate it into a computational fluid dynamics simulation of an HVPE<missing VAR>growth reactor.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations|Malik Hassanaly,Hariswaran Sitaraman,Kevin L. Schulte,Aaron J. Ptak,John Simon,Kevin Udwary,Jacob H. Leach,Heather Splawn###
(280532, 280533)
 We show that thedeveloped growth model and the improved cracking model are able to reproduceexperimental growth measurements of ceGaAs in an existing HVPE<missing VAR> system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HVP
###Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations|Malik Hassanaly,Hariswaran Sitaraman,Kevin L. Schulte,Aaron J. Ptak,John Simon,Kevin Udwary,Jacob H. Leach,Heather Splawn###
(280541, 280543)
 We show that thedeveloped growth model and the improved cracking model are able to reproduceexperimental growth measurements of ceGaAs in an existing HVPE<missing VAR> system.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Identifying optimal photovoltaic technologies for underwater applications|Jason A. Röhr,Ed Sartor,Joel N. Duenow,Zilun Qin,Juan Meng,Jason Lipton,Stephen A. Maclean,Udo Römer,Michael P. Nielsen,Suling Zhao,Jaemin Kong,Matthew O. Reese,Myles A. Steiner,N. J. Ekins-Daukes,André D. Taylor###
(280726, 280726)
 Employing LEDs to simulateunderwater solar spectra at various depths, we compare Si and CdTe solar cells,two commercially available technologies, with GaInP cells, a technology with awide band gap close to ideal for underwater solar harvesting.
EXCEPTION 3: IndexError for Ds
Si
[155.0, 2, 'm', 1],[177.0, 51, '%', 1]

PbI2
###Preserving the Stoichiometry of Triple-Cation Perovskites by Carrier-Gas-Free Antisolvent Spraying|Oscar Telschow,Miguel Albaladejo-Siguan,Lena Merten,Alexander D. Taylor,Katelyn P. Goetz,Tim Schramm,O. V. Konovalov,M. Jankowski,Alexander Hinderhofer,Fabian Paulus,Frank Schreiber,Yana Vaynzof###
(281383, 281385)
 Usually, the antisolvent isapplied by pipetting during the spin-coating process, which often irreversiblyalters the composition of the perovskite layer, resulting in the formation ofPbI2 at the surface and bulk of the perovskite layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 60, 'uL', 3],[180.0, 21, '%', 3]

VO2
###Multiple exciton generation and giant external quantum efficiency in VO$_2$|S. R. Sahu,A. Tripathy,K. Dey,N. Mansuri,V. G. Sathe,D. K. Shukla###
(281630, 281632)
Multiple exciton generation and giant external quantum efficiency in VO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 488, 'nm', 3],[144.0, 4.2, 'times', 3]

VO2
###Multiple exciton generation and giant external quantum efficiency in VO$_2$|S. R. Sahu,A. Tripathy,K. Dey,N. Mansuri,V. G. Sathe,D. K. Shukla###
(281743, 281745)
 Here, we present the firstexperimental observation of MEG and the same leading to giant external quantumefficiency (EQE) in VO2, a prototype strongly correlated material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 488, 'nm', 1],[31.0, 4.2, 'times', 1]

VO2
###Multiple exciton generation and giant external quantum efficiency in VO$_2$|S. R. Sahu,A. Tripathy,K. Dey,N. Mansuri,V. G. Sathe,D. K. Shukla###
(281790, 281792)
 Byemploying a photoexcitation (lamda  488 nm) of  4.2 times the bandgap, EQE inVO2 is enhanced up to  170 % at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 488, 'nm', 0],[14.0, 4.2, 'times', 0]

BO3
###ABO3 Perovskites' Formability Prediction and Crystal Structure Classification using Machine Learning|Minhaj Uddin Ahmad,A. Abdur Rahman Akib,Md. Mohsin Sarker Raihan,Abdullah Bin Shams###
(281908, 281910)
ABO3 Perovskites Formability Prediction and Crystal Structure Classification using Machine Learning.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 98.57, '%', 5],[293.0, 90.53, '%', 5]

(PV)
###ABO3 Perovskites' Formability Prediction and Crystal Structure Classification using Machine Learning|Minhaj Uddin Ahmad,A. Abdur Rahman Akib,Md. Mohsin Sarker Raihan,Abdullah Bin Shams###
(281967, 281970)
 Renewable energy sources are of great interest to combat global warming, yetpromising sources like photovoltaic (PV) cells are not efficient and cheapenough to act as an alternative to traditional energy sources.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 98.57, '%', 4],[233.0, 90.53, '%', 4]

PV
###ABO3 Perovskites' Formability Prediction and Crystal Structure Classification using Machine Learning|Minhaj Uddin Ahmad,A. Abdur Rahman Akib,Md. Mohsin Sarker Raihan,Abdullah Bin Shams###
(282019, 282020)
 Perovskite hashigh potential as a PV material but engineering the right material for aspecific application is often a lengthy process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 98.57, '%', 3],[183.0, 90.53, '%', 3]

In
###ABO3 Perovskites' Formability Prediction and Crystal Structure Classification using Machine Learning|Minhaj Uddin Ahmad,A. Abdur Rahman Akib,Md. Mohsin Sarker Raihan,Abdullah Bin Shams###
(282054, 282054)
 In this paper, ABO3 typeperovskites formability is predicted and its crystal structure is classifiedusing machine learning with high accuracy, which provides a fast screeningprocess.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 98.57, '%', 2],[149.0, 90.53, '%', 2]

BO3
###ABO3 Perovskites' Formability Prediction and Crystal Structure Classification using Machine Learning|Minhaj Uddin Ahmad,A. Abdur Rahman Akib,Md. Mohsin Sarker Raihan,Abdullah Bin Shams###
(282062, 282064)
 In this paper, ABO3 typeperovskites formability is predicted and its crystal structure is classifiedusing machine learning with high accuracy, which provides a fast screeningprocess.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 98.57, '%', 2],[139.0, 90.53, '%', 2]

(PV)
###Impact of metastable defect structures on carrier recombination in solar cells|Seán R. Kavanagh,David O. Scanlon,Aron Walsh,Christoph Freysoldt###
(282369, 282372)
 The efficiency of a solar cell is often limited by electron-holerecombination mediated by defect states within the band gap of the photovoltaic(PV) semiconductor.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impact of metastable defect structures on carrier recombination in solar cells|Seán R. Kavanagh,David O. Scanlon,Aron Walsh,Christoph Freysoldt###
(282386, 282386)
 The Shockley-Read-Hall (SR<missing VAR>H) model considers a static trapthat can successively capture electrons and holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Impact of metastable defect structures on carrier recombination in solar cells|Seán R. Kavanagh,David O. Scanlon,Aron Walsh,Christoph Freysoldt###
(282388, 282388)
 The Shockley-Read-Hall (SR<missing VAR>H) model considers a static trapthat can successively capture electrons and holes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Impact of metastable defect structures on carrier recombination in solar cells|Seán R. Kavanagh,David O. Scanlon,Aron Walsh,Christoph Freysoldt###
(282417, 282417)
 In reality however, truetrap levels vary with both the defect charge state and local structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Impact of metastable defect structures on carrier recombination in solar cells|Seán R. Kavanagh,David O. Scanlon,Aron Walsh,Christoph Freysoldt###
(282493, 282494)
 Here weconsider the role of metastable structural configurations in capturingelectrons and holes, taking the tellurium interstitial in CdTe as anillustrative example.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Theoretical proposal of a revolutionary water-splitting photocatalyst: The monolayer of boron phosphide|Tatsuo Suzuki###
(282821, 282822)
 This paper proposes the monolayer of boron phosphide as a stablehighly-efficient water-splitting photocatalyst by high-precisiondensity-functional theory calculations using a HSE<missing VAR>06 functional with a solventeffect.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1.4, 'eV', 1],[76.0, 890, 'nm', 2]

H
###Theoretical proposal of a revolutionary water-splitting photocatalyst: The monolayer of boron phosphide|Tatsuo Suzuki###
(282945, 282945)
 It absorbssunlight with wavelengths below about 890 nm (ultraviolet, visible, andnear-infrared light) and produces both hydrogen gas and oxygen gas from waterat a suitable p<missing VAR>H condition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.4, 'eV', 1],[47.0, 890, 'nm', 0]

BiFeO
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283021, 283023)
Dopant size effect on BiFeOrm3 perovskite structure for enhanced photovoltaic activity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283093, 283093)
 Atomic size effect is analyzed and investigatedby doping either Li, Cs or both on Barium doped BiFeO3 (BFO) which belongsto monoclinic P21/m<missing VAR> space group.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283096, 283096)
 Atomic size effect is analyzed and investigatedby doping either Li, Cs or both on Barium doped BiFeO3 (BFO) which belongsto monoclinic P21/m<missing VAR> space group.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283108, 283111)
 Atomic size effect is analyzed and investigatedby doping either Li, Cs or both on Barium doped BiFeO3 (BFO) which belongsto monoclinic P21/m<missing VAR> space group.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(BFO)
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283113, 283117)
 Atomic size effect is analyzed and investigatedby doping either Li, Cs or both on Barium doped BiFeO3 (BFO) which belongsto monoclinic P21/m<missing VAR> space group.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P21
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283128, 283130)
 Atomic size effect is analyzed and investigatedby doping either Li, Cs or both on Barium doped BiFeO3 (BFO) which belongsto monoclinic P21/m<missing VAR> space group.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283149, 283149)
 The calculated results reveal that Cs dopedBFO had significantly improved photocurrent density seemingly due to broadenedabsorption peaks and biplasmons generation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BFO
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283154, 283156)
 The calculated results reveal that Cs dopedBFO had significantly improved photocurrent density seemingly due to broadenedabsorption peaks and biplasmons generation.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283188, 283188)
 Co-doping two atoms with large sizedifference have a significant effect on plasmon width and peak than doping witha single and small sized atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283243, 283243)
 At higher photon energy realms of the order10e<missing VAR>V, the index of refraction reduces to n<missing VAR>(omega) to 1 implying that lightwave can tunnel through the pristine and doped BFO without any phase change,thus indicating its potential as an efficient candidate for a photonicapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283262, 283262)
 At higher photon energy realms of the order10e<missing VAR>V, the index of refraction reduces to n<missing VAR>(omega) to 1 implying that lightwave can tunnel through the pristine and doped BFO without any phase change,thus indicating its potential as an efficient candidate for a photonicapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BFO
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283309, 283311)
 At higher photon energy realms of the order10e<missing VAR>V, the index of refraction reduces to n<missing VAR>(omega) to 1 implying that lightwave can tunnel through the pristine and doped BFO without any phase change,thus indicating its potential as an efficient candidate for a photonicapplication.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283349, 283349)
 In addition, doped BFO shows abundant photocurrent generationproperties which would be important in solar cell and photovoltaicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BFO
###Dopant size effect on BiFeO$\rm_{3}$ perovskite structure for enhanced photovoltaic activity|Tewodros Eyob,Kenate Nemera,Lemi Demeyu###
(283356, 283358)
 In addition, doped BFO shows abundant photocurrent generationproperties which would be important in solar cell and photovoltaicapplications.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Coupling Perovskite Quantum Dot Pairs in Solution using Nanoplasmonic Assembly|Hao Zhang,Parinaz Moazzezi,Juanjuan Ren,Brett Henderson,Cristina Cordoba,Vishal Yeddu,Arthur M. Blackburn,Makhsud I. Saidaminov,Irina Paci,Stephen Hughes,Reuven Gordon###
(283429, 283429)
 Perovskite quantum dots (PQ<missing VAR>Ds) provide a robust solution-based approach toefficient solar cells, bright light-emitting devices, and quantum sources oflight.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.6, 'meV', 4]

Ds
###Coupling Perovskite Quantum Dot Pairs in Solution using Nanoplasmonic Assembly|Hao Zhang,Parinaz Moazzezi,Juanjuan Ren,Brett Henderson,Cristina Cordoba,Vishal Yeddu,Arthur M. Blackburn,Makhsud I. Saidaminov,Irina Paci,Stephen Hughes,Reuven Gordon###
(283431, 283431)
 Perovskite quantum dots (PQ<missing VAR>Ds) provide a robust solution-based approach toefficient solar cells, bright light-emitting devices, and quantum sources oflight.
EXCEPTION 3: IndexError for Ds
P
[174.0, 0.6, 'meV', 4]

Si
###Prospects for Perovskite/Silicon tandem solar cells to outperform c-Silicon solar cells at elevated temperatures|Ganga Vinod Chittiboina,Pradeep R. Nair###
(283812, 283812)
 Successful commercialization of Perovskite/Si tandem solar cells (P/Si T<missing VAR>SCs)need a-priori estimation of technological benchmarks to outperform c<missing VAR>-Si basedtechnologies under field conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 4, 'T', 3],[224.0, 2, 'T', 3]

P/Si
###Prospects for Perovskite/Silicon tandem solar cells to outperform c-Silicon solar cells at elevated temperatures|Ganga Vinod Chittiboina,Pradeep R. Nair###
(283821, 283823)
 Successful commercialization of Perovskite/Si tandem solar cells (P/Si T<missing VAR>SCs)need a-priori estimation of technological benchmarks to outperform c<missing VAR>-Si basedtechnologies under field conditions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[181.0, 4, 'T', 3],[213.0, 2, 'T', 3]

Cs
###Prospects for Perovskite/Silicon tandem solar cells to outperform c-Silicon solar cells at elevated temperatures|Ganga Vinod Chittiboina,Pradeep R. Nair###
(283827, 283827)
 Successful commercialization of Perovskite/Si tandem solar cells (P/Si T<missing VAR>SCs)need a-priori estimation of technological benchmarks to outperform c<missing VAR>-Si basedtechnologies under field conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 4, 'T', 3],[209.0, 2, 'T', 3]

Si
###Prospects for Perovskite/Silicon tandem solar cells to outperform c-Silicon solar cells at elevated temperatures|Ganga Vinod Chittiboina,Pradeep R. Nair###
(283851, 283851)
 Successful commercialization of Perovskite/Si tandem solar cells (P/Si T<missing VAR>SCs)need a-priori estimation of technological benchmarks to outperform c<missing VAR>-Si basedtechnologies under field conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 4, 'T', 3],[185.0, 2, 'T', 3]

P/Si
###Prospects for Perovskite/Silicon tandem solar cells to outperform c-Silicon solar cells at elevated temperatures|Ganga Vinod Chittiboina,Pradeep R. Nair###
(283915, 283917)
 To this end, through detailed numericalsimulations and analytical modeling, here we identify the limits of ionmigration and lifetime degradation till which P/Si T<missing VAR>SCs remain competitive.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[87.0, 4, 'T', 2],[119.0, 2, 'T', 2]

SCs
###Prospects for Perovskite/Silicon tandem solar cells to outperform c-Silicon solar cells at elevated temperatures|Ganga Vinod Chittiboina,Pradeep R. Nair###
(283920, 283921)
 To this end, through detailed numericalsimulations and analytical modeling, here we identify the limits of ionmigration and lifetime degradation till which P/Si T<missing VAR>SCs remain competitive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 4, 'T', 2],[115.0, 2, 'T', 2]

P/Si
###Prospects for Perovskite/Silicon tandem solar cells to outperform c-Silicon solar cells at elevated temperatures|Ganga Vinod Chittiboina,Pradeep R. Nair###
(283966, 283968)
 Ourresults unravel a unique scaling law for the evolution of the efficiency andthe temperature coefficient of P/Si T<missing VAR>SCs which allows us to anticipate thelimiting annual degradation rates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 4, 'T', 1],[68.0, 2, 'T', 1]

SCs
###Prospects for Perovskite/Silicon tandem solar cells to outperform c-Silicon solar cells at elevated temperatures|Ganga Vinod Chittiboina,Pradeep R. Nair###
(283971, 283972)
 Ourresults unravel a unique scaling law for the evolution of the efficiency andthe temperature coefficient of P/Si T<missing VAR>SCs which allows us to anticipate thelimiting annual degradation rates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4, 'T', 1],[64.0, 2, 'T', 1]

Si
###Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues|Yuzuki Ono,Hojun Im###
(284117, 284117)
Thermal annealing effects on Graphene/n<missing VAR>-Si Schottky junction Solar cell Removal of PMMA residues.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues|Yuzuki Ono,Hojun Im###
(284131, 284131)
Thermal annealing effects on Graphene/n<missing VAR>-Si Schottky junction Solar cell Removal of PMMA residues.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues|Yuzuki Ono,Hojun Im###
(284170, 284170)
 Thermal annealing is one of most effective way to improve the efficiency ofgraphene/n<missing VAR>-Si Schottky junction solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues|Yuzuki Ono,Hojun Im###
(284221, 284221)
 Here, its underlying mechanism hasbeen investigated by comparative studies in terms of the removal of polymethylmethacrylate (PMMA) residues, using the J<missing VAR>-V characteristics, the transientphotocurrent and photovoltage measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues|Yuzuki Ono,Hojun Im###
(284236, 284236)
 Here, its underlying mechanism hasbeen investigated by comparative studies in terms of the removal of polymethylmethacrylate (PMMA) residues, using the J<missing VAR>-V characteristics, the transientphotocurrent and photovoltage measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues|Yuzuki Ono,Hojun Im###
(284284, 284284)
 Experimental results have revealedthat there are trap states which are originated from the PMMA residues andcause the large photocurrent leakage as the intensity of the incident lightincreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues|Yuzuki Ono,Hojun Im###
(284334, 284334)
 It is also found that the PMMA residues accelerate deterioration andrapidly invalidate hole doping effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues|Yuzuki Ono,Hojun Im###
(284363, 284363)
 Such undesirable PMMA residues wereeffectively removed by the thermal annealing treatments, serving to reduce thephotocurrent leakage and to increase the stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284465, 284465)
 We demonstrate reduced surface recombination velocity (SR<missing VAR>V) and enhancedpower-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solarcells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 14, 'cm', 2],[279.0, 1.03, 'V', 4],[289.0, 1.09, 'V', 4],[319.0, 15.9, '%', 4],[324.0, 18.03, '%', 4]

V
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284467, 284467)
 We demonstrate reduced surface recombination velocity (SR<missing VAR>V) and enhancedpower-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solarcells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 14, 'cm', 2],[277.0, 1.03, 'V', 4],[287.0, 1.09, 'V', 4],[317.0, 15.9, '%', 4],[322.0, 18.03, '%', 4]

PC
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284482, 284483)
 We demonstrate reduced surface recombination velocity (SR<missing VAR>V) and enhancedpower-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solarcells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 14, 'cm', 2],[261.0, 1.03, 'V', 4],[271.0, 1.09, 'V', 4],[301.0, 15.9, '%', 4],[306.0, 18.03, '%', 4]

P
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284517, 284517)
 We demonstrate reduced surface recombination velocity (SR<missing VAR>V) and enhancedpower-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solarcells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 14, 'cm', 2],[227.0, 1.03, 'V', 4],[237.0, 1.09, 'V', 4],[267.0, 15.9, '%', 4],[272.0, 18.03, '%', 4]

S
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284520, 284520)
 We demonstrate reduced surface recombination velocity (SR<missing VAR>V) and enhancedpower-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solarcells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 14, 'cm', 2],[224.0, 1.03, 'V', 4],[234.0, 1.09, 'V', 4],[264.0, 15.9, '%', 4],[269.0, 18.03, '%', 4]

P
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284540, 284540)
We show the APTMS serves to passivate defects at the perovskite surface, whilealso decoupling the perovskite from detrimental interactions at the C60interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 14, 'cm', 1],[204.0, 1.03, 'V', 3],[214.0, 1.09, 'V', 3],[244.0, 15.9, '%', 3],[249.0, 18.03, '%', 3]

S
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284543, 284543)
We show the APTMS serves to passivate defects at the perovskite surface, whilealso decoupling the perovskite from detrimental interactions at the C60interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 14, 'cm', 1],[201.0, 1.03, 'V', 3],[211.0, 1.09, 'V', 3],[241.0, 15.9, '%', 3],[246.0, 18.03, '%', 3]

C60
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284583, 284584)
We show the APTMS serves to passivate defects at the perovskite surface, whilealso decoupling the perovskite from detrimental interactions at the C60interface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 14, 'cm', 1],[160.0, 1.03, 'V', 3],[170.0, 1.09, 'V', 3],[200.0, 15.9, '%', 3],[205.0, 18.03, '%', 3]

S
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284596, 284596)
 We measure a SR<missing VAR>V of 125 + 14 cm/s<missing VAR>, and a concomitant increase of100 meV in quasi-Fermi level splitting in passivated devices compared to thecontrols.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 14, 'cm', 0],[148.0, 1.03, 'V', 2],[158.0, 1.09, 'V', 2],[188.0, 15.9, '%', 2],[193.0, 18.03, '%', 2]

V
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284598, 284598)
 We measure a SR<missing VAR>V of 125 + 14 cm/s<missing VAR>, and a concomitant increase of100 meV in quasi-Fermi level splitting in passivated devices compared to thecontrols.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 14, 'cm', 0],[146.0, 1.03, 'V', 2],[156.0, 1.09, 'V', 2],[186.0, 15.9, '%', 2],[191.0, 18.03, '%', 2]

V
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284624, 284624)
 We measure a SR<missing VAR>V of 125 + 14 cm/s<missing VAR>, and a concomitant increase of100 meV in quasi-Fermi level splitting in passivated devices compared to thecontrols.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 14, 'cm', 0],[120.0, 1.03, 'V', 2],[130.0, 1.09, 'V', 2],[160.0, 15.9, '%', 2],[165.0, 18.03, '%', 2]

P
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284680, 284680)
 We use time-resolved photoluminescence and excitation-correlationphotoluminescence spectroscopy to show that APTMS passivation effectivelysuppresses non-radiative recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 14, 'cm', 1],[64.0, 1.03, 'V', 1],[74.0, 1.09, 'V', 1],[104.0, 15.9, '%', 1],[109.0, 18.03, '%', 1]

S
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284683, 284683)
 We use time-resolved photoluminescence and excitation-correlationphotoluminescence spectroscopy to show that APTMS passivation effectivelysuppresses non-radiative recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 14, 'cm', 1],[61.0, 1.03, 'V', 1],[71.0, 1.09, 'V', 1],[101.0, 15.9, '%', 1],[106.0, 18.03, '%', 1]

P
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284706, 284706)
 We show that APTMS improves both thefill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V forcontrol devices to 1.09 V for APTMS-passivated devices, which leads to PCE<missing VAR>increasing from 15.90% to 18.03%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 14, 'cm', 2],[38.0, 1.03, 'V', 0],[48.0, 1.09, 'V', 0],[78.0, 15.9, '%', 0],[83.0, 18.03, '%', 0]

S
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284709, 284709)
 We show that APTMS improves both thefill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V forcontrol devices to 1.09 V for APTMS-passivated devices, which leads to PCE<missing VAR>increasing from 15.90% to 18.03%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 14, 'cm', 2],[35.0, 1.03, 'V', 0],[45.0, 1.09, 'V', 0],[75.0, 15.9, '%', 0],[80.0, 18.03, '%', 0]

(VOC)
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284730, 284734)
 We show that APTMS improves both thefill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V forcontrol devices to 1.09 V for APTMS-passivated devices, which leads to PCE<missing VAR>increasing from 15.90% to 18.03%.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 14, 'cm', 2],[10.0, 1.03, 'V', 0],[20.0, 1.09, 'V', 0],[50.0, 15.9, '%', 0],[55.0, 18.03, '%', 0]

VOC
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284739, 284741)
 We show that APTMS improves both thefill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V forcontrol devices to 1.09 V for APTMS-passivated devices, which leads to PCE<missing VAR>increasing from 15.90% to 18.03%.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 14, 'cm', 2],[3.0, 1.03, 'V', 0],[13.0, 1.09, 'V', 0],[43.0, 15.9, '%', 0],[48.0, 18.03, '%', 0]

P
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284759, 284759)
 We show that APTMS improves both thefill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V forcontrol devices to 1.09 V for APTMS-passivated devices, which leads to PCE<missing VAR>increasing from 15.90% to 18.03%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 14, 'cm', 2],[15.0, 1.03, 'V', 0],[5.0, 1.09, 'V', 0],[25.0, 15.9, '%', 0],[30.0, 18.03, '%', 0]

S
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284762, 284762)
 We show that APTMS improves both thefill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V forcontrol devices to 1.09 V for APTMS-passivated devices, which leads to PCE<missing VAR>increasing from 15.90% to 18.03%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 14, 'cm', 2],[18.0, 1.03, 'V', 0],[8.0, 1.09, 'V', 0],[22.0, 15.9, '%', 0],[27.0, 18.03, '%', 0]

PC
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284775, 284776)
 We show that APTMS improves both thefill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V forcontrol devices to 1.09 V for APTMS-passivated devices, which leads to PCE<missing VAR>increasing from 15.90% to 18.03%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 14, 'cm', 2],[31.0, 1.03, 'V', 0],[21.0, 1.09, 'V', 0],[8.0, 15.9, '%', 0],[13.0, 18.03, '%', 0]

S
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284822, 284822)
 We attribute enhanced performance to reduceddefect density or suppressed nonradiative recombination and low SR<missing VAR>V at theperovskite/transporting layers interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 14, 'cm', 3],[78.0, 1.03, 'V', 1],[68.0, 1.09, 'V', 1],[38.0, 15.9, '%', 1],[33.0, 18.03, '%', 1]

V
###(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity|Yangwei Shi,Esteban Rojas-Gatjens,Jian Wang,Justin Pothoof,Rajiv Giridharagopal,Kevin Ho,Fangyuan Jiang,Margherita Taddei,Zhaoqing Yang,Carlos Silva-Acuña,David S. Ginger###
(284824, 284824)
 We attribute enhanced performance to reduceddefect density or suppressed nonradiative recombination and low SR<missing VAR>V at theperovskite/transporting layers interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 14, 'cm', 3],[80.0, 1.03, 'V', 1],[70.0, 1.09, 'V', 1],[40.0, 15.9, '%', 1],[35.0, 18.03, '%', 1]

SC
###Quantum Mechanical Assessment of Optimal Photovoltaic Conditions in Organic Solar Cells|Artur M. Andermann,Luis G. C. Rego###
(284882, 284883)
 Recombination losses contribute to reduce J<missing VAR>SC, VOC and the fillfactor of organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VOC
###Quantum Mechanical Assessment of Optimal Photovoltaic Conditions in Organic Solar Cells|Artur M. Andermann,Luis G. C. Rego###
(284886, 284888)
 Recombination losses contribute to reduce J<missing VAR>SC, VOC and the fillfactor of organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Hot carrier extraction from 2D semiconductor photoelectrodes|Rachelle Austin,Yusef Farah,Thomas Sayer,Brad M. Luther,Andrés Montoya-Castillo,Amber Krummel,Justin Sambur###
(285433, 285435)
 Using anunprecedented combination of photoelectrochemical and in situ transientabsorption spectroscopy measurements, we demonstrate ultrafast (<50 fs) hotexciton and free carrier extraction under applied bias in a proof-of-conceptphotoelectrochemical solar cell made from earth-abundant and potentiallyinexpensive monolayer (ML) MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, 'D', 2],[23.0, 1, 'cm', 1],[141.0, 2, 'D', 3]

MoS2
###Hot carrier extraction from 2D semiconductor photoelectrodes|Rachelle Austin,Yusef Farah,Thomas Sayer,Brad M. Luther,Andrés Montoya-Castillo,Amber Krummel,Justin Sambur###
(285472, 285474)
 Our approach facilitates ultrathin 7AA chargetransport distances over 1 cm2 areas by intimately coupling ML-MoS2 to anelectron-selective solid contact and a hole-selective electrolyte contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 2, 'D', 3],[14.0, 1, 'cm', 0],[102.0, 2, 'D', 2]

S
###Hot carrier extraction from 2D semiconductor photoelectrodes|Rachelle Austin,Yusef Farah,Thomas Sayer,Brad M. Luther,Andrés Montoya-Castillo,Amber Krummel,Justin Sambur###
(285547, 285547)
 Ourtheoretical investigations of the spatial distribution of exciton statessuggest greater electronic coupling between hot exciton states located onperipheral S atoms and neighboring contacts likely facilitates ultrafast chargetransfer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 2, 'D', 4],[89.0, 1, 'cm', 1],[29.0, 2, 'D', 1]

Ti
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285633, 285633)
Comparative study of the physical properties for the A2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) vacancy-ordered double perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 1.77, 'and', 4],[252.0, 1.59, 'eV', 4],[307.0, 105, 'cm', 5]

Cs
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285640, 285640)
Comparative study of the physical properties for the A2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) vacancy-ordered double perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 1.77, 'and', 4],[245.0, 1.59, 'eV', 4],[300.0, 105, 'cm', 5]

NH4
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285644, 285646)
Comparative study of the physical properties for the A2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) vacancy-ordered double perovskites.
Featurization terminated normally.
0.8,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 1.77, 'and', 4],[239.0, 1.59, 'eV', 4],[294.0, 105, 'cm', 5]

Cl
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285652, 285652)
Comparative study of the physical properties for the A2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) vacancy-ordered double perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 1.77, 'and', 4],[233.0, 1.59, 'eV', 4],[288.0, 105, 'cm', 5]

Br
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285656, 285656)
Comparative study of the physical properties for the A2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) vacancy-ordered double perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 1.77, 'and', 4],[229.0, 1.59, 'eV', 4],[284.0, 105, 'cm', 5]

VO
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285679, 285680)
 The vacancy-ordered double perovskites (VOD<missing VAR>P) are emerging materials for therenewable energy because of their extraordinary stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 1.77, 'and', 3],[205.0, 1.59, 'eV', 3],[260.0, 105, 'cm', 4]

P
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285682, 285682)
 The vacancy-ordered double perovskites (VOD<missing VAR>P) are emerging materials for therenewable energy because of their extraordinary stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 1.77, 'and', 3],[203.0, 1.59, 'eV', 3],[258.0, 105, 'cm', 4]

In
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285711, 285711)
 In the present work,we have addressed the structural, electronic and optical properties of theA2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) organic/inorganic halide VOD<missing VAR>Psbased on first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1.77, 'and', 2],[174.0, 1.59, 'eV', 2],[229.0, 105, 'cm', 3]

Ti
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285747, 285747)
 In the present work,we have addressed the structural, electronic and optical properties of theA2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) organic/inorganic halide VOD<missing VAR>Psbased on first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1.77, 'and', 2],[138.0, 1.59, 'eV', 2],[193.0, 105, 'cm', 3]

Cs
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285754, 285754)
 In the present work,we have addressed the structural, electronic and optical properties of theA2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) organic/inorganic halide VOD<missing VAR>Psbased on first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1.77, 'and', 2],[131.0, 1.59, 'eV', 2],[186.0, 105, 'cm', 3]

NH4
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285758, 285760)
 In the present work,we have addressed the structural, electronic and optical properties of theA2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) organic/inorganic halide VOD<missing VAR>Psbased on first-principles calculations.
Featurization terminated normally.
0.8,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 1.77, 'and', 2],[125.0, 1.59, 'eV', 2],[180.0, 105, 'cm', 3]

Cl
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285766, 285766)
 In the present work,we have addressed the structural, electronic and optical properties of theA2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) organic/inorganic halide VOD<missing VAR>Psbased on first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1.77, 'and', 2],[119.0, 1.59, 'eV', 2],[174.0, 105, 'cm', 3]

Br
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285770, 285770)
 In the present work,we have addressed the structural, electronic and optical properties of theA2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) organic/inorganic halide VOD<missing VAR>Psbased on first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 1.77, 'and', 2],[115.0, 1.59, 'eV', 2],[170.0, 105, 'cm', 3]

VO
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285779, 285780)
 In the present work,we have addressed the structural, electronic and optical properties of theA2TiX<missing VAR>6 (A Cs or NH4 and X<missing VAR> Cl or Br) organic/inorganic halide VOD<missing VAR>Psbased on first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1.77, 'and', 2],[105.0, 1.59, 'eV', 2],[160.0, 105, 'cm', 3]

Cs2TiBr6
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285854, 285858)
 The band structurecalculations for the Cs2TiBr6 and (NH4)2TiBr6 perovskites revealdirect band gaps about 1.77 and 1.59 eV respectively, which is predicted thesematerials be ideal for application in the solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.77, 'and', 0],[27.0, 1.59, 'eV', 0],[82.0, 105, 'cm', 1]

(NH4)2TiBr6
###Comparative study of the physical properties for the A$_2$TiX$_6$ (A= Cs or NH$_4$ and X= Cl or Br) vacancy-ordered double perovskites|M. Talebi,A. Mokhtari###
(285862, 285870)
 The band structurecalculations for the Cs2TiBr6 and (NH4)2TiBr6 perovskites revealdirect band gaps about 1.77 and 1.59 eV respectively, which is predicted thesematerials be ideal for application in the solar cells.
Featurization terminated normally.
0.47058823529411764,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0.35294117647058826,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1.77, 'and', 0],[15.0, 1.59, 'eV', 0],[70.0, 105, 'cm', 1]

PP
###Comparative Study of MPPT and Parameter Estimation of PV cells|Sahil Kumar,Sahitya Gupta,Vajayant Pratik,Pascal Brunet###
(286023, 286024)
Comparative Study of M<missing VAR>PPT<missing VAR> and Parameter Estimation of PV cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 95, 'percent', 5]

PV
###Comparative Study of MPPT and Parameter Estimation of PV cells|Sahil Kumar,Sahitya Gupta,Vajayant Pratik,Pascal Brunet###
(286035, 286036)
Comparative Study of M<missing VAR>PPT<missing VAR> and Parameter Estimation of PV cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 95, 'percent', 5]

PV
###Comparative Study of MPPT and Parameter Estimation of PV cells|Sahil Kumar,Sahitya Gupta,Vajayant Pratik,Pascal Brunet###
(286085, 286086)
 The presented work focuses on utilising machine learning techniques toaccurately estimate accurate values for known and unknown parameters of thePVL<missing VAR>IB model for solar cells and photovoltaic modules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 95, 'percent', 4]

IB
###Comparative Study of MPPT and Parameter Estimation of PV cells|Sahil Kumar,Sahitya Gupta,Vajayant Pratik,Pascal Brunet###
(286088, 286089)
 The presented work focuses on utilising machine learning techniques toaccurately estimate accurate values for known and unknown parameters of thePVL<missing VAR>IB model for solar cells and photovoltaic modules.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 95, 'percent', 4]

(PV)
###Comparative Study of MPPT and Parameter Estimation of PV cells|Sahil Kumar,Sahitya Gupta,Vajayant Pratik,Pascal Brunet###
(286122, 286125)
Finding accurate modelparameters of circuits for photovoltaic (PV) cells is important for a varietyof tasks.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 95, 'percent', 3]

N
###Comparative Study of MPPT and Parameter Estimation of PV cells|Sahil Kumar,Sahitya Gupta,Vajayant Pratik,Pascal Brunet###
(286156, 286156)
 An Artificial Neural Network (ANN) algorithm was employed, whichoutperformed other metaheuristic and machine learning algorithms in terms ofcomputational efficiency.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 95, 'percent', 2]

NN
###Comparative Study of MPPT and Parameter Estimation of PV cells|Sahil Kumar,Sahitya Gupta,Vajayant Pratik,Pascal Brunet###
(286282, 286283)
 Upon validation, the ANN algorithm wasutilised to estimate the parameters and their respective values.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 95, 'percent', 1]

F
###Long-lived exciton coherence in mixed-halide perovskite crystals|Stefan Grisard,Artur V. Trifonov,Ivan A. Solovev,Dmitri R. Yakovlev,Oleh Hordiichuk,Maksym V. Kovalenko,Manfred Bayer,Ilya A. Akimov###
(286429, 286429)
 Westudy the effect of compositional disorder on coherent exciton dynamics in amixed FA0.9Cs0.1PbI2.8Br0.2 perovskite crystal using photonecho spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1.5, 'K', 1]

Cs0.1PbI2.8Br0.2
###Long-lived exciton coherence in mixed-halide perovskite crystals|Stefan Grisard,Artur V. Trifonov,Ivan A. Solovev,Dmitri R. Yakovlev,Oleh Hordiichuk,Maksym V. Kovalenko,Manfred Bayer,Ilya A. Akimov###
(286432, 286438)
 Westudy the effect of compositional disorder on coherent exciton dynamics in amixed FA0.9Cs0.1PbI2.8Br0.2 perovskite crystal using photonecho spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04878048780487806,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6829268292682927,0,0.02439024390243903,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.24390243902439027,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.5, 'K', 1]

V
###Long-lived exciton coherence in mixed-halide perovskite crystals|Stefan Grisard,Artur V. Trifonov,Ivan A. Solovev,Dmitri R. Yakovlev,Oleh Hordiichuk,Maksym V. Kovalenko,Manfred Bayer,Ilya A. Akimov###
(286484, 286484)
 We reveal that the homogeneous linewidth of excitons can beas narrow as 16mue<missing VAR>V at a temperature of 1.5K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1.5, 'K', 0]

(PV)
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287091, 287094)
Photovoltaic (PV) cells are the most promising man-made devices for directsolar energy utilization.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 3.3, '%', 3],[230.0, 6.1, '%', 3],[246.0, 7.3, '%', 3],[573.0, 15, 'thiophene', 9]

PV
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287141, 287142)
 Understanding the charge separation and chargetransport in PV materials at a molecular level is crucial for improving theefficiency of the solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 3.3, '%', 2],[182.0, 6.1, '%', 2],[198.0, 7.3, '%', 2],[525.0, 15, 'thiophene', 8]

P3H
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287232, 287234)
 Here, we use light-induced EPR spectroscopycombined with DFT calculations to study the electronic structure of chargeseparated states in blends of polymers (P3HT<missing VAR>, PCDTBT<missing VAR>, and PT<missing VAR>B7) and fullerenederivatives (C60-PCBM<missing VAR> and C70-PCBM).
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3.3, '%', 1],[90.0, 6.1, '%', 1],[106.0, 7.3, '%', 1],[433.0, 15, 'thiophene', 7]

PC
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287238, 287239)
 Here, we use light-induced EPR spectroscopycombined with DFT calculations to study the electronic structure of chargeseparated states in blends of polymers (P3HT<missing VAR>, PCDTBT<missing VAR>, and PT<missing VAR>B7) and fullerenederivatives (C60-PCBM<missing VAR> and C70-PCBM).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3.3, '%', 1],[85.0, 6.1, '%', 1],[101.0, 7.3, '%', 1],[428.0, 15, 'thiophene', 7]

B
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287242, 287242)
 Here, we use light-induced EPR spectroscopycombined with DFT calculations to study the electronic structure of chargeseparated states in blends of polymers (P3HT<missing VAR>, PCDTBT<missing VAR>, and PT<missing VAR>B7) and fullerenederivatives (C60-PCBM<missing VAR> and C70-PCBM).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 3.3, '%', 1],[82.0, 6.1, '%', 1],[98.0, 7.3, '%', 1],[425.0, 15, 'thiophene', 7]

P
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287248, 287248)
 Here, we use light-induced EPR spectroscopycombined with DFT calculations to study the electronic structure of chargeseparated states in blends of polymers (P3HT<missing VAR>, PCDTBT<missing VAR>, and PT<missing VAR>B7) and fullerenederivatives (C60-PCBM<missing VAR> and C70-PCBM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3.3, '%', 1],[76.0, 6.1, '%', 1],[92.0, 7.3, '%', 1],[419.0, 15, 'thiophene', 7]

B7
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287250, 287251)
 Here, we use light-induced EPR spectroscopycombined with DFT calculations to study the electronic structure of chargeseparated states in blends of polymers (P3HT<missing VAR>, PCDTBT<missing VAR>, and PT<missing VAR>B7) and fullerenederivatives (C60-PCBM<missing VAR> and C70-PCBM).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 3.3, '%', 1],[73.0, 6.1, '%', 1],[89.0, 7.3, '%', 1],[416.0, 15, 'thiophene', 7]

C60
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287262, 287263)
 Here, we use light-induced EPR spectroscopycombined with DFT calculations to study the electronic structure of chargeseparated states in blends of polymers (P3HT<missing VAR>, PCDTBT<missing VAR>, and PT<missing VAR>B7) and fullerenederivatives (C60-PCBM<missing VAR> and C70-PCBM).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 3.3, '%', 1],[61.0, 6.1, '%', 1],[77.0, 7.3, '%', 1],[404.0, 15, 'thiophene', 7]

PCB
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287265, 287267)
 Here, we use light-induced EPR spectroscopycombined with DFT calculations to study the electronic structure of chargeseparated states in blends of polymers (P3HT<missing VAR>, PCDTBT<missing VAR>, and PT<missing VAR>B7) and fullerenederivatives (C60-PCBM<missing VAR> and C70-PCBM).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 3.3, '%', 1],[57.0, 6.1, '%', 1],[73.0, 7.3, '%', 1],[400.0, 15, 'thiophene', 7]

C70
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287272, 287273)
 Here, we use light-induced EPR spectroscopycombined with DFT calculations to study the electronic structure of chargeseparated states in blends of polymers (P3HT<missing VAR>, PCDTBT<missing VAR>, and PT<missing VAR>B7) and fullerenederivatives (C60-PCBM<missing VAR> and C70-PCBM).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3.3, '%', 1],[51.0, 6.1, '%', 1],[67.0, 7.3, '%', 1],[394.0, 15, 'thiophene', 7]

PCB
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287275, 287277)
 Here, we use light-induced EPR spectroscopycombined with DFT calculations to study the electronic structure of chargeseparated states in blends of polymers (P3HT<missing VAR>, PCDTBT<missing VAR>, and PT<missing VAR>B7) and fullerenederivatives (C60-PCBM<missing VAR> and C70-PCBM).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3.3, '%', 1],[47.0, 6.1, '%', 1],[63.0, 7.3, '%', 1],[390.0, 15, 'thiophene', 7]

P3H
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287317, 287319)
 Solar cells made with the same compositesas active layers show power conversion efficiencies of 3.3% (P3HT), 6.1%(PCDTBT), and 7.3% (PT<missing VAR>B7), respectively.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 3.3, '%', 0],[5.0, 6.1, '%', 0],[21.0, 7.3, '%', 0],[348.0, 15, 'thiophene', 6]

PC
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287329, 287330)
 Solar cells made with the same compositesas active layers show power conversion efficiencies of 3.3% (P3HT), 6.1%(PCDTBT), and 7.3% (PT<missing VAR>B7), respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 3.3, '%', 0],[5.0, 6.1, '%', 0],[10.0, 7.3, '%', 0],[337.0, 15, 'thiophene', 6]

B
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287333, 287333)
 Solar cells made with the same compositesas active layers show power conversion efficiencies of 3.3% (P3HT), 6.1%(PCDTBT), and 7.3% (PT<missing VAR>B7), respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3.3, '%', 0],[9.0, 6.1, '%', 0],[7.0, 7.3, '%', 0],[334.0, 15, 'thiophene', 6]

P
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287344, 287344)
 Solar cells made with the same compositesas active layers show power conversion efficiencies of 3.3% (P3HT), 6.1%(PCDTBT), and 7.3% (PT<missing VAR>B7), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3.3, '%', 0],[20.0, 6.1, '%', 0],[4.0, 7.3, '%', 0],[323.0, 15, 'thiophene', 6]

B7
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287346, 287347)
 Solar cells made with the same compositesas active layers show power conversion efficiencies of 3.3% (P3HT), 6.1%(PCDTBT), and 7.3% (PT<missing VAR>B7), respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3.3, '%', 0],[22.0, 6.1, '%', 0],[6.0, 7.3, '%', 0],[320.0, 15, 'thiophene', 6]

P
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287414, 287414)
 They are thepositive, P+, and negative, P-, polarons on the polymer backbone and fullerenecage, respectively, and correspond to radical cations and radical anions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 3.3, '%', 2],[90.0, 6.1, '%', 2],[74.0, 7.3, '%', 2],[253.0, 15, 'thiophene', 4]

P
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287423, 287423)
 They are thepositive, P+, and negative, P-, polarons on the polymer backbone and fullerenecage, respectively, and correspond to radical cations and radical anions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3.3, '%', 2],[99.0, 6.1, '%', 2],[83.0, 7.3, '%', 2],[244.0, 15, 'thiophene', 4]

O
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287542, 287542)
 Light-induced pulsed ENDOR<missing VAR> spectroscopy allowed the determination of1H hyperfine coupling constants of photogenerated positive and negativepolarons.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 3.3, '%', 4],[218.0, 6.1, '%', 4],[202.0, 7.3, '%', 4],[125.0, 15, 'thiophene', 2]

H
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287557, 287557)
 Light-induced pulsed ENDOR<missing VAR> spectroscopy allowed the determination of1H hyperfine coupling constants of photogenerated positive and negativepolarons.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 3.3, '%', 4],[233.0, 6.1, '%', 4],[217.0, 7.3, '%', 4],[110.0, 15, 'thiophene', 2]

P3H
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287673, 287675)
 This corresponds to about 15 thiophene units for P3HT<missing VAR>,approximately three units PCDTBT<missing VAR>, and about three to four units for PT<missing VAR>B7.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 3.3, '%', 6],[349.0, 6.1, '%', 6],[333.0, 7.3, '%', 6],[6.0, 15, 'thiophene', 0]

PC
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287686, 287687)
 This corresponds to about 15 thiophene units for P3HT<missing VAR>,approximately three units PCDTBT<missing VAR>, and about three to four units for PT<missing VAR>B7.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 3.3, '%', 6],[362.0, 6.1, '%', 6],[346.0, 7.3, '%', 6],[19.0, 15, 'thiophene', 0]

B
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287690, 287690)
 This corresponds to about 15 thiophene units for P3HT<missing VAR>,approximately three units PCDTBT<missing VAR>, and about three to four units for PT<missing VAR>B7.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 3.3, '%', 6],[366.0, 6.1, '%', 6],[350.0, 7.3, '%', 6],[23.0, 15, 'thiophene', 0]

P
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287708, 287708)
 This corresponds to about 15 thiophene units for P3HT<missing VAR>,approximately three units PCDTBT<missing VAR>, and about three to four units for PT<missing VAR>B7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 3.3, '%', 6],[384.0, 6.1, '%', 6],[368.0, 7.3, '%', 6],[41.0, 15, 'thiophene', 0]

B7
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287710, 287711)
 This corresponds to about 15 thiophene units for P3HT<missing VAR>,approximately three units PCDTBT<missing VAR>, and about three to four units for PT<missing VAR>B7.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 3.3, '%', 6],[386.0, 6.1, '%', 6],[370.0, 7.3, '%', 6],[43.0, 15, 'thiophene', 0]

No
###Highly-Efficient Charge Separation and Polaron Delocalization in Polymer-Fullerene Bulk-Heterojunctions: A Comparative Multi-Frequency EPR & DFT Study|Jens Niklas,Kristy L. Mardis,Brian P. Banks,Gregory M. Grooms,Andreas Sperlich,Vladimir Dyakonov,Serge Beaupré,Mario Leclerc,Tao Xu,Luping Yu,Oleg G. Poluektov###
(287714, 287714)
 Nospin density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[401.0, 3.3, '%', 7],[390.0, 6.1, '%', 7],[374.0, 7.3, '%', 7],[47.0, 15, 'thiophene', 1]

HI
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(287738, 287739)
Photoconversion in the HIT<missing VAR> solar cells Theory vs experiment.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 20, ',', 6],[357.0, 80, 'to', 7],[359.0, 420, ',', 7],[406.0, 200, ',', 9]

HI
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(287787, 287788)
 We obtain theoretical expressions for the photocurrent in the Heterojunctionsolar cells with Intrinsic Thin layer (HIT<missing VAR> cells).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 20, ',', 5],[308.0, 80, 'to', 6],[310.0, 420, ',', 6],[357.0, 200, ',', 8]

SiH
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(287829, 287830)
 Our calculations take intoaccount tunneling of electrons and holes through wide-bandgap layers ofalpha-SiH or alpha-SiCH.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 20, ',', 4],[266.0, 80, 'to', 5],[268.0, 420, ',', 5],[315.0, 200, ',', 7]

SiCH
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(287836, 287838)
 Our calculations take intoaccount tunneling of electrons and holes through wide-bandgap layers ofalpha-SiH or alpha-SiCH.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 20, ',', 4],[258.0, 80, 'to', 5],[260.0, 420, ',', 5],[307.0, 200, ',', 7]

HI
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(287931, 287932)
 We propose an algorithm to compute the photoconversion efficiency ofHIT<missing VAR> elements, taking into account the peculiarities of the open-circuit voltagegeneration, in particular, its rather high values.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 20, ',', 2],[164.0, 80, 'to', 3],[166.0, 420, ',', 3],[213.0, 200, ',', 5]

HI
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(288005, 288006)
 For this, we fabricate HIT<missing VAR>elements with the efficiency of about 20,%.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 20, ',', 0],[90.0, 80, 'to', 1],[92.0, 420, ',', 1],[139.0, 200, ',', 3]

K
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(288100, 288100)
 We measured the temperaturedependence of the short-circuit current, open-circuit voltage, photoconversionpower, and fill factor of the current-voltage curve of these elements in a widetemperature range from 80 to 420,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 20, ',', 1],[4.0, 80, 'to', 0],[2.0, 420, ',', 0],[45.0, 200, ',', 2]

In
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(288103, 288103)
 In the low-temperature range, theopen-circuit voltage and the photoconversion power decrease on cooling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 20, ',', 2],[7.0, 80, 'to', 1],[5.0, 420, ',', 1],[42.0, 200, ',', 1]

At
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(288138, 288138)
 At T<missing VAR>ge 200,K, the theoretical expressions and the experimental curves agreerather well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 20, ',', 3],[42.0, 80, 'to', 2],[40.0, 420, ',', 2],[7.0, 200, ',', 0]

K
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(288147, 288147)
 At T<missing VAR>ge 200,K, the theoretical expressions and the experimental curves agreerather well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 20, ',', 3],[51.0, 80, 'to', 2],[49.0, 420, ',', 2],[2.0, 200, ',', 0]

HI
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(288248, 288249)
We discuss the reasons behind the reduction of the power temperaturecoefficient in HIT<missing VAR> elements.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 20, ',', 5],[152.0, 80, 'to', 4],[150.0, 420, ',', 4],[103.0, 200, ',', 2]

HI
###Photoconversion in the HIT solar cells: Theory vs experiment|A. V. Sachenko,Yu. V. Kryuchenko,V. P. Kostylyov,A. V. Bobyl,E. I. Terukov,S. N. Abolmasov,A. S. Abramov,D. A. Andronikov,M. Z. Shvarts,I. O. Sokolovskyi,M. Evstigneev###
(288311, 288312)
 Finally, we derive atheoretical expression for the HIT<missing VAR> elements<missing VAR> operation temperature undernatural working conditions.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 20, ',', 7],[215.0, 80, 'to', 6],[213.0, 420, ',', 6],[166.0, 200, ',', 4]

Cs
###Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells|Eric Singh,Ki Seok Kim,Geun Young Yeom,Hari Singh Nalwa###
(288379, 288379)
 Dye-sensitized solar cells (D<missing VAR>SSCs) are gaining considerable interest asalternatives to the semiconductor-based thin film solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 13, '%', 3],[181.0, 2, 'D', 3],[257.0, 2, 'D', 4],[421.0, 3, ',', 5],[688.0, 10.46, '%', 7],[702.0, 8.25, '%', 7],[707.0, 1, 'Sun', 7],[716.0, 2, ',', 7],[721.0, 1.5, 'G', 7]

(Pt)
###Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells|Eric Singh,Ki Seok Kim,Geun Young Yeom,Hari Singh Nalwa###
(288421, 288423)
 The noble metalplatinum (Pt) is conventionally used as counter electrode (CE) material forfabricating D<missing VAR>SSCs.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 13, '%', 2],[137.0, 2, 'D', 2],[213.0, 2, 'D', 3],[377.0, 3, ',', 4],[644.0, 10.46, '%', 6],[658.0, 8.25, '%', 6],[663.0, 1, 'Sun', 6],[672.0, 2, ',', 6],[677.0, 1.5, 'G', 6]

C
###Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells|Eric Singh,Ki Seok Kim,Geun Young Yeom,Hari Singh Nalwa###
(288438, 288438)
 The noble metalplatinum (Pt) is conventionally used as counter electrode (CE) material forfabricating D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 13, '%', 2],[122.0, 2, 'D', 2],[198.0, 2, 'D', 3],[362.0, 3, ',', 4],[629.0, 10.46, '%', 6],[643.0, 8.25, '%', 6],[648.0, 1, 'Sun', 6],[657.0, 2, ',', 6],[662.0, 1.5, 'G', 6]

SSCs
###Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells|Eric Singh,Ki Seok Kim,Geun Young Yeom,Hari Singh Nalwa###
(288450, 288452)
 The noble metalplatinum (Pt) is conventionally used as counter electrode (CE) material forfabricating D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 13, '%', 2],[108.0, 2, 'D', 2],[184.0, 2, 'D', 3],[348.0, 3, ',', 4],[615.0, 10.46, '%', 6],[629.0, 8.25, '%', 6],[634.0, 1, 'Sun', 6],[643.0, 2, ',', 6],[648.0, 1.5, 'G', 6]

Pt
###Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells|Eric Singh,Ki Seok Kim,Geun Young Yeom,Hari Singh Nalwa###
(288457, 288457)
 Since Pt is expensive and scarce, new materials have beenexplored to develop cost-effective Pt-free counter electrodes for D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 13, '%', 1],[103.0, 2, 'D', 1],[179.0, 2, 'D', 2],[343.0, 3, ',', 3],[610.0, 10.46, '%', 5],[624.0, 8.25, '%', 5],[629.0, 1, 'Sun', 5],[638.0, 2, ',', 5],[643.0, 1.5, 'G', 5]

Pt
###Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells|Eric Singh,Ki Seok Kim,Geun Young Yeom,Hari Singh Nalwa###
(288487, 288487)
 Since Pt is expensive and scarce, new materials have beenexplored to develop cost-effective Pt-free counter electrodes for D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 13, '%', 1],[73.0, 2, 'D', 1],[149.0, 2, 'D', 2],[313.0, 3, ',', 3],[580.0, 10.46, '%', 5],[594.0, 8.25, '%', 5],[599.0, 1, 'Sun', 5],[608.0, 2, ',', 5],[613.0, 1.5, 'G', 5]

SSCs
###Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells|Eric Singh,Ki Seok Kim,Geun Young Yeom,Hari Singh Nalwa###
(288498, 288500)
 Since Pt is expensive and scarce, new materials have beenexplored to develop cost-effective Pt-free counter electrodes for D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 13, '%', 1],[60.0, 2, 'D', 1],[136.0, 2, 'D', 2],[300.0, 3, ',', 3],[567.0, 10.46, '%', 5],[581.0, 8.25, '%', 5],[586.0, 1, 'Sun', 5],[595.0, 2, ',', 5],[600.0, 1.5, 'G', 5]

Ds
###Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells|Eric Singh,Ki Seok Kim,Geun Young Yeom,Hari Singh Nalwa###
(288573, 288573)
Two-dimensional (2D) graphene-based counter electrodes have achieved thehighest known power conversion efficiency (eta) of 13%, which has stimulatedresearch activities in 2D layered transition metal dichalcogenides (TMDs) fordeveloping Pt-free D<missing VAR>SSCs.
EXCEPTION 3: IndexError for Ds
Pt
[29.0, 13, '%', 0],[13.0, 2, 'D', 0],[63.0, 2, 'D', 1],[227.0, 3, ',', 2],[494.0, 10.46, '%', 4],[508.0, 8.25, '%', 4],[513.0, 1, 'Sun', 4],[522.0, 2, ',', 4],[527.0, 1.5, 'G', 4]

(OPV)
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289210, 289214)
 After the efficiency of organic photovoltaic (OPV) cells achieved more than10%, the control of stability and degradation mechanisms of solar cells becamea prominent task.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 10, '%', 0]

H
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289287, 289287)
 The improvement of device efficiency due to incorporation ofa hole-transport layer (HTL) in bulk-heterojunction solar cells has beenextensively reported.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10, '%', 1]

H
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289323, 289323)
 However, the most widely used HTL material, PEDOT<missing VAR>PSS isfrequently suspected to be the dominating source for devices instability underenvironmental conditions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 10, '%', 2]

P
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289330, 289330)
 However, the most widely used HTL material, PEDOT<missing VAR>PSS isfrequently suspected to be the dominating source for devices instability underenvironmental conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 10, '%', 2]

O
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289333, 289333)
 However, the most widely used HTL material, PEDOT<missing VAR>PSS isfrequently suspected to be the dominating source for devices instability underenvironmental conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 10, '%', 2]

PSS
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289335, 289337)
 However, the most widely used HTL material, PEDOT<missing VAR>PSS isfrequently suspected to be the dominating source for devices instability underenvironmental conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 10, '%', 2]

H
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289433, 289433)
 However, often inenvironmental device studies, the source of degradation, whether being from theHTL, the active layer or the metal cathode are rather difficult to distinguish,because the external diffusion of oxygen and water affects all components.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 10, '%', 4]

In
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289487, 289487)
 Inthis study, different HT<missing VAR>Ls, namely prepared from traditional PEDOT<missing VAR>PSS and alsotwo types of molybdenum trioxide (MoO3), are exposed to different environmentssuch as oxygen, light or humidity, prior to device finalization under inertconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 10, '%', 5]

H
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289497, 289497)
 Inthis study, different HT<missing VAR>Ls, namely prepared from traditional PEDOT<missing VAR>PSS and alsotwo types of molybdenum trioxide (MoO3), are exposed to different environmentssuch as oxygen, light or humidity, prior to device finalization under inertconditions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 10, '%', 5]

P
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289510, 289510)
 Inthis study, different HT<missing VAR>Ls, namely prepared from traditional PEDOT<missing VAR>PSS and alsotwo types of molybdenum trioxide (MoO3), are exposed to different environmentssuch as oxygen, light or humidity, prior to device finalization under inertconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 10, '%', 5]

O
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289513, 289513)
 Inthis study, different HT<missing VAR>Ls, namely prepared from traditional PEDOT<missing VAR>PSS and alsotwo types of molybdenum trioxide (MoO3), are exposed to different environmentssuch as oxygen, light or humidity, prior to device finalization under inertconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 10, '%', 5]

PSS
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289515, 289517)
 Inthis study, different HT<missing VAR>Ls, namely prepared from traditional PEDOT<missing VAR>PSS and alsotwo types of molybdenum trioxide (MoO3), are exposed to different environmentssuch as oxygen, light or humidity, prior to device finalization under inertconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 10, '%', 5]

(MoO3)
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289534, 289538)
 Inthis study, different HT<missing VAR>Ls, namely prepared from traditional PEDOT<missing VAR>PSS and alsotwo types of molybdenum trioxide (MoO3), are exposed to different environmentssuch as oxygen, light or humidity, prior to device finalization under inertconditions.
Featurization successful!
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 10, '%', 5]

H
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289596, 289596)
 This allows investigating any effects within the HTL and fromreactions at its interface to the indium-tin-oxide electrode or the activelayer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 10, '%', 6]

H
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289651, 289651)
 The surface and bulk chemistry of the exposed HTL has been monitored anddiscussed in context to the observed device physics, dynamic charge transportand spatial performance homogeneity of the according OPV device.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 10, '%', 7]

OPV
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289702, 289704)
 The surface and bulk chemistry of the exposed HTL has been monitored anddiscussed in context to the observed device physics, dynamic charge transportand spatial performance homogeneity of the according OPV device.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[477.0, 10, '%', 7]

H
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289728, 289728)
 The resultsshow that merely humidity-exposure of the HTL leads to decreased deviceperformance for PEDOT<missing VAR>PSS, but also for one type of the tested MoO3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[503.0, 10, '%', 8]

P
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289745, 289745)
 The resultsshow that merely humidity-exposure of the HTL leads to decreased deviceperformance for PEDOT<missing VAR>PSS, but also for one type of the tested MoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[520.0, 10, '%', 8]

O
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289748, 289748)
 The resultsshow that merely humidity-exposure of the HTL leads to decreased deviceperformance for PEDOT<missing VAR>PSS, but also for one type of the tested MoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[523.0, 10, '%', 8]

PSS
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289750, 289752)
 The resultsshow that merely humidity-exposure of the HTL leads to decreased deviceperformance for PEDOT<missing VAR>PSS, but also for one type of the tested MoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[525.0, 10, '%', 8]

MoO3
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289771, 289773)
 The resultsshow that merely humidity-exposure of the HTL leads to decreased deviceperformance for PEDOT<missing VAR>PSS, but also for one type of the tested MoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[546.0, 10, '%', 8]

H
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289801, 289801)
 The lossesare related to the amount of absorbed water in the HTL, inducing loss of activearea in terms of interfacial contact.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[576.0, 10, '%', 9]

P
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289834, 289834)
 The device with PEDOT<missing VAR>PSS HTL after humidair exposure showed seriously decreased photocurrent by micro-delamination ofswelling/shrinkage of the hygroscopic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[609.0, 10, '%', 10]

O
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289837, 289837)
 The device with PEDOT<missing VAR>PSS HTL after humidair exposure showed seriously decreased photocurrent by micro-delamination ofswelling/shrinkage of the hygroscopic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[612.0, 10, '%', 10]

PSS
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289839, 289841)
 The device with PEDOT<missing VAR>PSS HTL after humidair exposure showed seriously decreased photocurrent by micro-delamination ofswelling/shrinkage of the hygroscopic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[614.0, 10, '%', 10]

H
###Influence of Environmentally Affected Hole Transport Layers on Spatial Homogeneity and Charge Transport Dynamics of Organic Solar Cells|Huei -Ting Chien,Florian Pilat,Thomas Griesser,Harald Fitzek,Peter Poelt,Bettina Friedel###
(289843, 289843)
 The device with PEDOT<missing VAR>PSS HTL after humidair exposure showed seriously decreased photocurrent by micro-delamination ofswelling/shrinkage of the hygroscopic layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[618.0, 10, '%', 10]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289907, 289907)
Structure, Electrical and Optical Properties of IT<missing VAR>O Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 75, 'nm', 8],[353.0, 29, 'x', 8],[363.0, 1.65, 'x', 8],[535.0, 3.56, 'eV', 11],[613.0, 325, 'nm', 13],[618.0, 0.82, 'V', 13],[623.0, 17, 'mA', 13],[626.0, 2, ',', 13],[635.0, 57.4, '%', 13],[658.0, 8.6, '%', 13]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289909, 289909)
Structure, Electrical and Optical Properties of IT<missing VAR>O Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 75, 'nm', 8],[351.0, 29, 'x', 8],[361.0, 1.65, 'x', 8],[533.0, 3.56, 'eV', 11],[611.0, 325, 'nm', 13],[616.0, 0.82, 'V', 13],[621.0, 17, 'mA', 13],[624.0, 2, ',', 13],[633.0, 57.4, '%', 13],[656.0, 8.6, '%', 13]

CdS/CdTe
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289927, 289931)
Structure, Electrical and Optical Properties of IT<missing VAR>O Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[312.0, 75, 'nm', 8],[329.0, 29, 'x', 8],[339.0, 1.65, 'x', 8],[511.0, 3.56, 'eV', 11],[589.0, 325, 'nm', 13],[594.0, 0.82, 'V', 13],[599.0, 17, 'mA', 13],[602.0, 2, ',', 13],[611.0, 57.4, '%', 13],[634.0, 8.6, '%', 13]

In
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289942, 289942)
 In terms of mixing graded TiO2 and SnO2 powders by solid-state reactionmethod, IT<missing VAR>O was prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 75, 'nm', 7],[318.0, 29, 'x', 7],[328.0, 1.65, 'x', 7],[500.0, 3.56, 'eV', 10],[578.0, 325, 'nm', 12],[583.0, 0.82, 'V', 12],[588.0, 17, 'mA', 12],[591.0, 2, ',', 12],[600.0, 57.4, '%', 12],[623.0, 8.6, '%', 12]

TiO2
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289952, 289954)
 In terms of mixing graded TiO2 and SnO2 powders by solid-state reactionmethod, IT<missing VAR>O was prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 75, 'nm', 7],[306.0, 29, 'x', 7],[316.0, 1.65, 'x', 7],[488.0, 3.56, 'eV', 10],[566.0, 325, 'nm', 12],[571.0, 0.82, 'V', 12],[576.0, 17, 'mA', 12],[579.0, 2, ',', 12],[588.0, 57.4, '%', 12],[611.0, 8.6, '%', 12]

SnO2
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289958, 289960)
 In terms of mixing graded TiO2 and SnO2 powders by solid-state reactionmethod, IT<missing VAR>O was prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 75, 'nm', 7],[300.0, 29, 'x', 7],[310.0, 1.65, 'x', 7],[482.0, 3.56, 'eV', 10],[560.0, 325, 'nm', 12],[565.0, 0.82, 'V', 12],[570.0, 17, 'mA', 12],[573.0, 2, ',', 12],[582.0, 57.4, '%', 12],[605.0, 8.6, '%', 12]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289976, 289976)
 In terms of mixing graded TiO2 and SnO2 powders by solid-state reactionmethod, IT<missing VAR>O was prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 75, 'nm', 7],[284.0, 29, 'x', 7],[294.0, 1.65, 'x', 7],[466.0, 3.56, 'eV', 10],[544.0, 325, 'nm', 12],[549.0, 0.82, 'V', 12],[554.0, 17, 'mA', 12],[557.0, 2, ',', 12],[566.0, 57.4, '%', 12],[589.0, 8.6, '%', 12]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289978, 289978)
 In terms of mixing graded TiO2 and SnO2 powders by solid-state reactionmethod, IT<missing VAR>O was prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 75, 'nm', 7],[282.0, 29, 'x', 7],[292.0, 1.65, 'x', 7],[464.0, 3.56, 'eV', 10],[542.0, 325, 'nm', 12],[547.0, 0.82, 'V', 12],[552.0, 17, 'mA', 12],[555.0, 2, ',', 12],[564.0, 57.4, '%', 12],[587.0, 8.6, '%', 12]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289996, 289996)
 Using electron beam gun technology, IT<missing VAR>O films withdifferent thicknesses were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 75, 'nm', 6],[264.0, 29, 'x', 6],[274.0, 1.65, 'x', 6],[446.0, 3.56, 'eV', 9],[524.0, 325, 'nm', 11],[529.0, 0.82, 'V', 11],[534.0, 17, 'mA', 11],[537.0, 2, ',', 11],[546.0, 57.4, '%', 11],[569.0, 8.6, '%', 11]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(289998, 289998)
 Using electron beam gun technology, IT<missing VAR>O films withdifferent thicknesses were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 75, 'nm', 6],[262.0, 29, 'x', 6],[272.0, 1.65, 'x', 6],[444.0, 3.56, 'eV', 9],[522.0, 325, 'nm', 11],[527.0, 0.82, 'V', 11],[532.0, 17, 'mA', 11],[535.0, 2, ',', 11],[544.0, 57.4, '%', 11],[567.0, 8.6, '%', 11]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290081, 290081)
 The XRD patterns wereutilized to determine the structural parameters (lattice strain and crystallitesize) of IT<missing VAR>O with different thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 75, 'nm', 4],[179.0, 29, 'x', 4],[189.0, 1.65, 'x', 4],[361.0, 3.56, 'eV', 7],[439.0, 325, 'nm', 9],[444.0, 0.82, 'V', 9],[449.0, 17, 'mA', 9],[452.0, 2, ',', 9],[461.0, 57.4, '%', 9],[484.0, 8.6, '%', 9]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290083, 290083)
 The XRD patterns wereutilized to determine the structural parameters (lattice strain and crystallitesize) of IT<missing VAR>O with different thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 75, 'nm', 4],[177.0, 29, 'x', 4],[187.0, 1.65, 'x', 4],[359.0, 3.56, 'eV', 7],[437.0, 325, 'nm', 9],[442.0, 0.82, 'V', 9],[447.0, 17, 'mA', 9],[450.0, 2, ',', 9],[459.0, 57.4, '%', 9],[482.0, 8.6, '%', 9]

S
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290134, 290134)
 SEM shows that as the film thickness increases, the grainsize of IT<missing VAR>O increases and improves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 75, 'nm', 2],[126.0, 29, 'x', 2],[136.0, 1.65, 'x', 2],[308.0, 3.56, 'eV', 5],[386.0, 325, 'nm', 7],[391.0, 0.82, 'V', 7],[396.0, 17, 'mA', 7],[399.0, 2, ',', 7],[408.0, 57.4, '%', 7],[431.0, 8.6, '%', 7]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290162, 290162)
 SEM shows that as the film thickness increases, the grainsize of IT<missing VAR>O increases and improves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 75, 'nm', 2],[98.0, 29, 'x', 2],[108.0, 1.65, 'x', 2],[280.0, 3.56, 'eV', 5],[358.0, 325, 'nm', 7],[363.0, 0.82, 'V', 7],[368.0, 17, 'mA', 7],[371.0, 2, ',', 7],[380.0, 57.4, '%', 7],[403.0, 8.6, '%', 7]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290164, 290164)
 SEM shows that as the film thickness increases, the grainsize of IT<missing VAR>O increases and improves.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 75, 'nm', 2],[96.0, 29, 'x', 2],[106.0, 1.65, 'x', 2],[278.0, 3.56, 'eV', 5],[356.0, 325, 'nm', 7],[361.0, 0.82, 'V', 7],[366.0, 17, 'mA', 7],[369.0, 2, ',', 7],[378.0, 57.4, '%', 7],[401.0, 8.6, '%', 7]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290181, 290181)
 The electrical properties of IT<missing VAR>O films withdifferent thicknesses were measured by the standard four-point probe method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 75, 'nm', 1],[79.0, 29, 'x', 1],[89.0, 1.65, 'x', 1],[261.0, 3.56, 'eV', 4],[339.0, 325, 'nm', 6],[344.0, 0.82, 'V', 6],[349.0, 17, 'mA', 6],[352.0, 2, ',', 6],[361.0, 57.4, '%', 6],[384.0, 8.6, '%', 6]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290183, 290183)
 The electrical properties of IT<missing VAR>O films withdifferent thicknesses were measured by the standard four-point probe method.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 75, 'nm', 1],[77.0, 29, 'x', 1],[87.0, 1.65, 'x', 1],[259.0, 3.56, 'eV', 4],[337.0, 325, 'nm', 6],[342.0, 0.82, 'V', 6],[347.0, 17, 'mA', 6],[350.0, 2, ',', 6],[359.0, 57.4, '%', 6],[382.0, 8.6, '%', 6]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290234, 290234)
 Itcan be seen that as the thickness of the IT<missing VAR>O film increases from 75 nm to 325nm, the resistivity decreases from 29x10-4 Ohm/cm to 1.65x10-4 Ohm/cm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 75, 'nm', 0],[26.0, 29, 'x', 0],[36.0, 1.65, 'x', 0],[208.0, 3.56, 'eV', 3],[286.0, 325, 'nm', 5],[291.0, 0.82, 'V', 5],[296.0, 17, 'mA', 5],[299.0, 2, ',', 5],[308.0, 57.4, '%', 5],[331.0, 8.6, '%', 5]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290236, 290236)
 Itcan be seen that as the thickness of the IT<missing VAR>O film increases from 75 nm to 325nm, the resistivity decreases from 29x10-4 Ohm/cm to 1.65x10-4 Ohm/cm.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 75, 'nm', 0],[24.0, 29, 'x', 0],[34.0, 1.65, 'x', 0],[206.0, 3.56, 'eV', 3],[284.0, 325, 'nm', 5],[289.0, 0.82, 'V', 5],[294.0, 17, 'mA', 5],[297.0, 2, ',', 5],[306.0, 57.4, '%', 5],[329.0, 8.6, '%', 5]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290287, 290287)
 Thismeans that IT<missing VAR>O films with lower electrical properties will be more suitable forhigh-efficiency CdTe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 75, 'nm', 1],[27.0, 29, 'x', 1],[17.0, 1.65, 'x', 1],[155.0, 3.56, 'eV', 2],[233.0, 325, 'nm', 4],[238.0, 0.82, 'V', 4],[243.0, 17, 'mA', 4],[246.0, 2, ',', 4],[255.0, 57.4, '%', 4],[278.0, 8.6, '%', 4]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290289, 290289)
 Thismeans that IT<missing VAR>O films with lower electrical properties will be more suitable forhigh-efficiency CdTe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 75, 'nm', 1],[29.0, 29, 'x', 1],[19.0, 1.65, 'x', 1],[153.0, 3.56, 'eV', 2],[231.0, 325, 'nm', 4],[236.0, 0.82, 'V', 4],[241.0, 17, 'mA', 4],[244.0, 2, ',', 4],[253.0, 57.4, '%', 4],[276.0, 8.6, '%', 4]

CdTe
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290316, 290317)
 Thismeans that IT<missing VAR>O films with lower electrical properties will be more suitable forhigh-efficiency CdTe solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 75, 'nm', 1],[56.0, 29, 'x', 1],[46.0, 1.65, 'x', 1],[125.0, 3.56, 'eV', 2],[203.0, 325, 'nm', 4],[208.0, 0.82, 'V', 4],[213.0, 17, 'mA', 4],[216.0, 2, ',', 4],[225.0, 57.4, '%', 4],[248.0, 8.6, '%', 4]

B
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290344, 290344)
 Three optical layer models (adhesive layer ofthe substrate/B-spline layer of IT<missing VAR>O film/surface roughness layer) are used tocalculate the film thickness with high-precision ellipsometry.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 75, 'nm', 2],[84.0, 29, 'x', 2],[74.0, 1.65, 'x', 2],[98.0, 3.56, 'eV', 1],[176.0, 325, 'nm', 3],[181.0, 0.82, 'V', 3],[186.0, 17, 'mA', 3],[189.0, 2, ',', 3],[198.0, 57.4, '%', 3],[221.0, 8.6, '%', 3]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290352, 290352)
 Three optical layer models (adhesive layer ofthe substrate/B-spline layer of IT<missing VAR>O film/surface roughness layer) are used tocalculate the film thickness with high-precision ellipsometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 75, 'nm', 2],[92.0, 29, 'x', 2],[82.0, 1.65, 'x', 2],[90.0, 3.56, 'eV', 1],[168.0, 325, 'nm', 3],[173.0, 0.82, 'V', 3],[178.0, 17, 'mA', 3],[181.0, 2, ',', 3],[190.0, 57.4, '%', 3],[213.0, 8.6, '%', 3]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290354, 290354)
 Three optical layer models (adhesive layer ofthe substrate/B-spline layer of IT<missing VAR>O film/surface roughness layer) are used tocalculate the film thickness with high-precision ellipsometry.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 75, 'nm', 2],[94.0, 29, 'x', 2],[84.0, 1.65, 'x', 2],[88.0, 3.56, 'eV', 1],[166.0, 325, 'nm', 3],[171.0, 0.82, 'V', 3],[176.0, 17, 'mA', 3],[179.0, 2, ',', 3],[188.0, 57.4, '%', 3],[211.0, 8.6, '%', 3]

In
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290389, 290389)
 In the higherT<missing VAR>(lambda) and R<missing VAR>(lambda) absorption regions, the absorption coefficient isdetermined to calculate the optical energy gap, which increases from 3.56 eV to3.69 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 75, 'nm', 3],[129.0, 29, 'x', 3],[119.0, 1.65, 'x', 3],[53.0, 3.56, 'eV', 0],[131.0, 325, 'nm', 2],[136.0, 0.82, 'V', 2],[141.0, 17, 'mA', 2],[144.0, 2, ',', 2],[153.0, 57.4, '%', 2],[176.0, 8.6, '%', 2]

V
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290450, 290450)
 In the higherT<missing VAR>(lambda) and R<missing VAR>(lambda) absorption regions, the absorption coefficient isdetermined to calculate the optical energy gap, which increases from 3.56 eV to3.69 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 75, 'nm', 3],[190.0, 29, 'x', 3],[180.0, 1.65, 'x', 3],[8.0, 3.56, 'eV', 0],[70.0, 325, 'nm', 2],[75.0, 0.82, 'V', 2],[80.0, 17, 'mA', 2],[83.0, 2, ',', 2],[92.0, 57.4, '%', 2],[115.0, 8.6, '%', 2]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290462, 290462)
 Finally, the effects of IT<missing VAR>O layers of various thicknesses on theperformance of CdS/CdTe solar cells are also studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 75, 'nm', 4],[202.0, 29, 'x', 4],[192.0, 1.65, 'x', 4],[20.0, 3.56, 'eV', 1],[58.0, 325, 'nm', 1],[63.0, 0.82, 'V', 1],[68.0, 17, 'mA', 1],[71.0, 2, ',', 1],[80.0, 57.4, '%', 1],[103.0, 8.6, '%', 1]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290464, 290464)
 Finally, the effects of IT<missing VAR>O layers of various thicknesses on theperformance of CdS/CdTe solar cells are also studied.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 75, 'nm', 4],[204.0, 29, 'x', 4],[194.0, 1.65, 'x', 4],[22.0, 3.56, 'eV', 1],[56.0, 325, 'nm', 1],[61.0, 0.82, 'V', 1],[66.0, 17, 'mA', 1],[69.0, 2, ',', 1],[78.0, 57.4, '%', 1],[101.0, 8.6, '%', 1]

CdS/CdTe
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290483, 290487)
 Finally, the effects of IT<missing VAR>O layers of various thicknesses on theperformance of CdS/CdTe solar cells are also studied.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[240.0, 75, 'nm', 4],[223.0, 29, 'x', 4],[213.0, 1.65, 'x', 4],[41.0, 3.56, 'eV', 1],[33.0, 325, 'nm', 1],[38.0, 0.82, 'V', 1],[43.0, 17, 'mA', 1],[46.0, 2, ',', 1],[55.0, 57.4, '%', 1],[78.0, 8.6, '%', 1]

I
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290511, 290511)
 When the thickness of theIT<missing VAR>O window layer is 325 nm, Voc  0.82 V, Jsc  17 mA/cm2, and FF  57.4%, thehighest power conversion efficiency (PCE) is 8.6%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 75, 'nm', 5],[251.0, 29, 'x', 5],[241.0, 1.65, 'x', 5],[69.0, 3.56, 'eV', 2],[9.0, 325, 'nm', 0],[14.0, 0.82, 'V', 0],[19.0, 17, 'mA', 0],[22.0, 2, ',', 0],[31.0, 57.4, '%', 0],[54.0, 8.6, '%', 0]

O
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290513, 290513)
 When the thickness of theIT<missing VAR>O window layer is 325 nm, Voc  0.82 V, Jsc  17 mA/cm2, and FF  57.4%, thehighest power conversion efficiency (PCE) is 8.6%.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 75, 'nm', 5],[253.0, 29, 'x', 5],[243.0, 1.65, 'x', 5],[71.0, 3.56, 'eV', 2],[7.0, 325, 'nm', 0],[12.0, 0.82, 'V', 0],[17.0, 17, 'mA', 0],[20.0, 2, ',', 0],[29.0, 57.4, '%', 0],[52.0, 8.6, '%', 0]

FF
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290538, 290539)
 When the thickness of theIT<missing VAR>O window layer is 325 nm, Voc  0.82 V, Jsc  17 mA/cm2, and FF  57.4%, thehighest power conversion efficiency (PCE) is 8.6%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 75, 'nm', 5],[278.0, 29, 'x', 5],[268.0, 1.65, 'x', 5],[96.0, 3.56, 'eV', 2],[18.0, 325, 'nm', 0],[13.0, 0.82, 'V', 0],[8.0, 17, 'mA', 0],[5.0, 2, ',', 0],[3.0, 57.4, '%', 0],[26.0, 8.6, '%', 0]

PC
###Structure, Electrical and Optical Properties of ITO Thin Films and their Influence on Performance of CdS/CdTe Thin-Film Solar Cells|Moustafa Ahmed,Ahmed Bakry,Essam R. Shaaban,Hamed Dalir###
(290558, 290559)
 When the thickness of theIT<missing VAR>O window layer is 325 nm, Voc  0.82 V, Jsc  17 mA/cm2, and FF  57.4%, thehighest power conversion efficiency (PCE) is 8.6%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 75, 'nm', 5],[298.0, 29, 'x', 5],[288.0, 1.65, 'x', 5],[116.0, 3.56, 'eV', 2],[38.0, 325, 'nm', 0],[33.0, 0.82, 'V', 0],[28.0, 17, 'mA', 0],[25.0, 2, ',', 0],[16.0, 57.4, '%', 0],[6.0, 8.6, '%', 0]

CH3NH3PbI3
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290614, 290622)
 The hybrid halide perovskite CH3NH3PbI3 is easy to manufacture andinexpensive.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[523.0, 0.26, 'eV', 13]

In
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290785, 290785)
 In this study, from a different perspective, the effects ofthe movement of the M<missing VAR>A molecule along the C-N axis are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 0.26, 'eV', 8]

C
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290825, 290825)
 In this study, from a different perspective, the effects ofthe movement of the M<missing VAR>A molecule along the C-N axis are investigated.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 0.26, 'eV', 8]

N
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290827, 290827)
 In this study, from a different perspective, the effects ofthe movement of the M<missing VAR>A molecule along the C-N axis are investigated.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 0.26, 'eV', 8]

In
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290873, 290873)
In this study, density functional theory (DFT) that accounts for van der Waals(vdW) interactions was used in the calculations for the cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 0.26, 'eV', 6]

W
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290907, 290907)
In this study, density functional theory (DFT) that accounts for van der Waals(vdW) interactions was used in the calculations for the cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 0.26, 'eV', 6]

H
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290941, 290941)
 According to thedata obtained, H-I ionic bonds are formed between the M<missing VAR>A molecule and theinorganic framework.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 0.26, 'eV', 5]

I
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290943, 290943)
 According to thedata obtained, H-I ionic bonds are formed between the M<missing VAR>A molecule and theinorganic framework.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 0.26, 'eV', 5]

H
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290981, 290981)
 Within the structure, the H-I bond length tends to bepreserved, although the position of the M<missing VAR>A changes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.26, 'eV', 4]

I
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(290983, 290983)
 Within the structure, the H-I bond length tends to bepreserved, although the position of the M<missing VAR>A changes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 0.26, 'eV', 4]

In
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291015, 291015)
 In this mechanism, the Iion plays an important role by moving away from its place in the Pb-I-Pbalignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0.26, 'eV', 3]

I
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291024, 291024)
 In this mechanism, the Iion plays an important role by moving away from its place in the Pb-I-Pbalignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.26, 'eV', 3]

Pb
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291053, 291053)
 In this mechanism, the Iion plays an important role by moving away from its place in the Pb-I-Pbalignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0.26, 'eV', 3]

I
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291055, 291055)
 In this mechanism, the Iion plays an important role by moving away from its place in the Pb-I-Pbalignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.26, 'eV', 3]

Pb
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291057, 291057)
 In this mechanism, the Iion plays an important role by moving away from its place in the Pb-I-Pbalignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0.26, 'eV', 3]

I
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291071, 291071)
 The position of the I ion determines the nature of the band gaptransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.26, 'eV', 2]

I
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291127, 291127)
 Depending on theposition of the I ion, the band gap may narrow by about 0.26 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.26, 'eV', 0]

I
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291157, 291157)
 The separationof the I ion from the Pb-I-Pb alignment by the effect of the M<missing VAR>A molecule breaksthe inverse symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.26, 'eV', 1]

Pb
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291165, 291165)
 The separationof the I ion from the Pb-I-Pb alignment by the effect of the M<missing VAR>A molecule breaksthe inverse symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.26, 'eV', 1]

I
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291167, 291167)
 The separationof the I ion from the Pb-I-Pb alignment by the effect of the M<missing VAR>A molecule breaksthe inverse symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.26, 'eV', 1]

Pb
###Theoretical investigation of the role of the organic cation in methylammonium lead iodide perovskite|Veysel Çelik###
(291169, 291169)
 The separationof the I ion from the Pb-I-Pb alignment by the effect of the M<missing VAR>A molecule breaksthe inverse symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.26, 'eV', 1]

CsPbI3
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291288, 291291)
Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells A numerical investigation in DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 1.483, 'eV', 4],[595.0, 96, 'device', 8],[647.0, 17.9, '%', 8]

SC
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291314, 291315)
Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells A numerical investigation in DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 1.483, 'eV', 4],[571.0, 96, 'device', 8],[623.0, 17.9, '%', 8]

PS
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291317, 291318)
Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells A numerical investigation in DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 1.483, 'eV', 4],[568.0, 96, 'device', 8],[620.0, 17.9, '%', 8]

PS
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291329, 291330)
Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells A numerical investigation in DFT, SCAPS-1D<missing VAR>, and wxAM<missing VAR>PS frameworks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 1.483, 'eV', 4],[556.0, 96, 'device', 8],[608.0, 17.9, '%', 8]

CsPbI3
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291335, 291338)
 CsPbI3 has recently received tremendous attention as a possible absorber ofperovskite solar cells (PSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 1.483, 'eV', 3],[548.0, 96, 'device', 7],[600.0, 17.9, '%', 7]

(PSCs)
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291367, 291371)
 CsPbI3 has recently received tremendous attention as a possible absorber ofperovskite solar cells (PSCs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1.483, 'eV', 3],[515.0, 96, 'device', 7],[567.0, 17.9, '%', 7]

CsPbI3
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291377, 291380)
 However, CsPbI3-based PSCs have yet to achievethe high performance of the hybrid PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 1.483, 'eV', 2],[506.0, 96, 'device', 6],[558.0, 17.9, '%', 6]

PSCs
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291384, 291386)
 However, CsPbI3-based PSCs have yet to achievethe high performance of the hybrid PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1.483, 'eV', 2],[500.0, 96, 'device', 6],[552.0, 17.9, '%', 6]

PSCs
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291409, 291411)
 However, CsPbI3-based PSCs have yet to achievethe high performance of the hybrid PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1.483, 'eV', 2],[475.0, 96, 'device', 6],[527.0, 17.9, '%', 6]

In
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291414, 291414)
 In this work, we performed a densityfunctional theory (DFT) study using the Cambridge Serial Total Energy Package(CASTEP) code for the cubic CsPbI3 absorber to compare and evaluate itsstructural, electronic, and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1.483, 'eV', 1],[472.0, 96, 'device', 5],[524.0, 17.9, '%', 5]

C
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291458, 291458)
 In this work, we performed a densityfunctional theory (DFT) study using the Cambridge Serial Total Energy Package(CASTEP) code for the cubic CsPbI3 absorber to compare and evaluate itsstructural, electronic, and optical properties.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1.483, 'eV', 1],[428.0, 96, 'device', 5],[480.0, 17.9, '%', 5]

S
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291460, 291460)
 In this work, we performed a densityfunctional theory (DFT) study using the Cambridge Serial Total Energy Package(CASTEP) code for the cubic CsPbI3 absorber to compare and evaluate itsstructural, electronic, and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1.483, 'eV', 1],[426.0, 96, 'device', 5],[478.0, 17.9, '%', 5]

P
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291463, 291463)
 In this work, we performed a densityfunctional theory (DFT) study using the Cambridge Serial Total Energy Package(CASTEP) code for the cubic CsPbI3 absorber to compare and evaluate itsstructural, electronic, and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.483, 'eV', 1],[423.0, 96, 'device', 5],[475.0, 17.9, '%', 5]

CsPbI3
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291474, 291477)
 In this work, we performed a densityfunctional theory (DFT) study using the Cambridge Serial Total Energy Package(CASTEP) code for the cubic CsPbI3 absorber to compare and evaluate itsstructural, electronic, and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 1.483, 'eV', 1],[409.0, 96, 'device', 5],[461.0, 17.9, '%', 5]

PB
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291528, 291529)
 The calculated electronic bandgap (Eg) using the GGA-PBE<missing VAR> approach of CASTEP was 1.483 eV for this CsPbI3absorber.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1.483, 'eV', 0],[357.0, 96, 'device', 4],[409.0, 17.9, '%', 4]

C
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291536, 291536)
 The calculated electronic bandgap (Eg) using the GGA-PBE<missing VAR> approach of CASTEP was 1.483 eV for this CsPbI3absorber.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1.483, 'eV', 0],[350.0, 96, 'device', 4],[402.0, 17.9, '%', 4]

S
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291538, 291538)
 The calculated electronic bandgap (Eg) using the GGA-PBE<missing VAR> approach of CASTEP was 1.483 eV for this CsPbI3absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1.483, 'eV', 0],[348.0, 96, 'device', 4],[400.0, 17.9, '%', 4]

P
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291541, 291541)
 The calculated electronic bandgap (Eg) using the GGA-PBE<missing VAR> approach of CASTEP was 1.483 eV for this CsPbI3absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1.483, 'eV', 0],[345.0, 96, 'device', 4],[397.0, 17.9, '%', 4]

CsPbI3
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291550, 291553)
 The calculated electronic bandgap (Eg) using the GGA-PBE<missing VAR> approach of CASTEP was 1.483 eV for this CsPbI3absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1.483, 'eV', 0],[333.0, 96, 'device', 4],[385.0, 17.9, '%', 4]

S
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291575, 291575)
 Moreover, the computed density of states (D<missing VAR>OS) exhibited the dominantcontribution from the Pb-5d<missing VAR> orbital, and most charge also accumulated for thePb atom as seen from the electronic charge density map.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1.483, 'eV', 1],[311.0, 96, 'device', 3],[363.0, 17.9, '%', 3]

Pb
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291591, 291591)
 Moreover, the computed density of states (D<missing VAR>OS) exhibited the dominantcontribution from the Pb-5d<missing VAR> orbital, and most charge also accumulated for thePb atom as seen from the electronic charge density map.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 1.483, 'eV', 1],[295.0, 96, 'device', 3],[347.0, 17.9, '%', 3]

Pb
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291614, 291614)
 Moreover, the computed density of states (D<missing VAR>OS) exhibited the dominantcontribution from the Pb-5d<missing VAR> orbital, and most charge also accumulated for thePb atom as seen from the electronic charge density map.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1.483, 'eV', 1],[272.0, 96, 'device', 3],[324.0, 17.9, '%', 3]

CsPbI3
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291672, 291675)
 Fermi surfacecalculation showed multiband character, and optical properties were computed toinvestigate the optical response of CsPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.483, 'eV', 2],[211.0, 96, 'device', 2],[263.0, 17.9, '%', 2]

I
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291685, 291685)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1.483, 'eV', 3],[201.0, 96, 'device', 1],[253.0, 17.9, '%', 1]

O
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291688, 291688)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1.483, 'eV', 3],[198.0, 96, 'device', 1],[250.0, 17.9, '%', 1]

SnO2
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291691, 291693)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1.483, 'eV', 3],[193.0, 96, 'device', 1],[245.0, 17.9, '%', 1]

WS2
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291697, 291699)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 1.483, 'eV', 3],[187.0, 96, 'device', 1],[239.0, 17.9, '%', 1]

CeO2
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291702, 291704)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1.483, 'eV', 3],[182.0, 96, 'device', 1],[234.0, 17.9, '%', 1]

PCB
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291707, 291709)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1.483, 'eV', 3],[177.0, 96, 'device', 1],[229.0, 17.9, '%', 1]

TiO2
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291713, 291715)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1.483, 'eV', 3],[171.0, 96, 'device', 1],[223.0, 17.9, '%', 1]

ZnO
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291718, 291719)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 1.483, 'eV', 3],[167.0, 96, 'device', 1],[219.0, 17.9, '%', 1]

C60
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291724, 291725)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 1.483, 'eV', 3],[161.0, 96, 'device', 1],[213.0, 17.9, '%', 1]

Cu2O
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291747, 291749)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 1.483, 'eV', 3],[137.0, 96, 'device', 1],[189.0, 17.9, '%', 1]

CuSCN
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291752, 291755)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 1.483, 'eV', 3],[131.0, 96, 'device', 1],[183.0, 17.9, '%', 1]

CuSbS2
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291758, 291761)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 1.483, 'eV', 3],[125.0, 96, 'device', 1],[177.0, 17.9, '%', 1]

O
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291767, 291767)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 1.483, 'eV', 3],[119.0, 96, 'device', 1],[171.0, 17.9, '%', 1]

V2O5
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291773, 291776)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 1.483, 'eV', 3],[110.0, 96, 'device', 1],[162.0, 17.9, '%', 1]

CB
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291779, 291780)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 1.483, 'eV', 3],[106.0, 96, 'device', 1],[158.0, 17.9, '%', 1]

S
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291782, 291782)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 1.483, 'eV', 3],[104.0, 96, 'device', 1],[156.0, 17.9, '%', 1]

CF
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291785, 291786)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 1.483, 'eV', 3],[100.0, 96, 'device', 1],[152.0, 17.9, '%', 1]

S
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291788, 291788)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 1.483, 'eV', 3],[98.0, 96, 'device', 1],[150.0, 17.9, '%', 1]

P3H
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291791, 291793)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 1.483, 'eV', 3],[93.0, 96, 'device', 1],[145.0, 17.9, '%', 1]

P
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291797, 291797)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 1.483, 'eV', 3],[89.0, 96, 'device', 1],[141.0, 17.9, '%', 1]

O
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291800, 291800)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 1.483, 'eV', 3],[86.0, 96, 'device', 1],[138.0, 17.9, '%', 1]

PSS
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291803, 291805)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 1.483, 'eV', 3],[81.0, 96, 'device', 1],[133.0, 17.9, '%', 1]

NiO
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291808, 291809)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 1.483, 'eV', 3],[77.0, 96, 'device', 1],[129.0, 17.9, '%', 1]

CuO
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291813, 291814)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 1.483, 'eV', 3],[72.0, 96, 'device', 1],[124.0, 17.9, '%', 1]

CuI
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291819, 291820)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 1.483, 'eV', 3],[66.0, 96, 'device', 1],[118.0, 17.9, '%', 1]

H
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291833, 291833)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 1.483, 'eV', 3],[53.0, 96, 'device', 1],[105.0, 17.9, '%', 1]

H
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291847, 291847)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 1.483, 'eV', 3],[39.0, 96, 'device', 1],[91.0, 17.9, '%', 1]

CsPbI3
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291851, 291854)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 1.483, 'eV', 3],[32.0, 96, 'device', 1],[84.0, 17.9, '%', 1]

SC
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291866, 291867)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 1.483, 'eV', 3],[19.0, 96, 'device', 1],[71.0, 17.9, '%', 1]

PS
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291869, 291870)
 Furthermore, we used IGZO, SnO2,WS2, CeO2, PCBM<missing VAR>, TiO2, ZnO, and C60 as the electron transport layers (ETLs),and Cu2O, CuSCN, CuSbS2, Spiro-MeOTAD, V2O5, CBT<missing VAR>S, CFT<missing VAR>S, P3HT<missing VAR>, PEDOT<missing VAR> PSS, NiO,CuO, and CuI as the hole transport layers (HT<missing VAR>Ls) to identify the bestHTL/CsPbI3/ETL combinations using the SCAPS-1D<missing VAR> solar cell simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 1.483, 'eV', 3],[16.0, 96, 'device', 1],[68.0, 17.9, '%', 1]

I
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291903, 291903)
Among 96 device structures, the best-optimized device structure,IT<missing VAR>O/TiO2/CsPbI3/CBT<missing VAR>S/Au was identified, which exhibited an efficiency of 17.9%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 1.483, 'eV', 4],[17.0, 96, 'device', 0],[35.0, 17.9, '%', 0]

O/TiO2/CsPbI3/CB
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291905, 291917)
Among 96 device structures, the best-optimized device structure,IT<missing VAR>O/TiO2/CsPbI3/CBT<missing VAR>S/Au was identified, which exhibited an efficiency of 17.9%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[361.0, 1.483, 'eV', 4],[19.0, 96, 'device', 0],[21.0, 17.9, '%', 0]

S/Au
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(291919, 291921)
Among 96 device structures, the best-optimized device structure,IT<missing VAR>O/TiO2/CsPbI3/CBT<missing VAR>S/Au was identified, which exhibited an efficiency of 17.9%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[375.0, 1.483, 'eV', 4],[33.0, 96, 'device', 0],[17.0, 17.9, '%', 0]

SC
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(292043, 292044)
 The obtained results from SCAPS-1D<missing VAR> were also compared withwxAM<missing VAR>PS simulation software.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[499.0, 1.483, 'eV', 6],[157.0, 96, 'device', 2],[105.0, 17.9, '%', 2]

PS
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(292046, 292047)
 The obtained results from SCAPS-1D<missing VAR> were also compared withwxAM<missing VAR>PS simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[502.0, 1.483, 'eV', 6],[160.0, 96, 'device', 2],[108.0, 17.9, '%', 2]

PS
###Effect of various electron and hole transport layers on the performance of CsPbI3-based perovskite solar cells: A numerical investigation in DFT, SCAPS-1D, and wxAMPS frameworks|M. Khalid Hossain,Mirza Humaun Kabir Rubel,G. F. Ishraque Toki,Intekhab Alam,Md. Ferdous Rahman,H. Bencherif###
(292064, 292065)
 The obtained results from SCAPS-1D<missing VAR> were also compared withwxAM<missing VAR>PS simulation software.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[520.0, 1.483, 'eV', 6],[178.0, 96, 'device', 2],[126.0, 17.9, '%', 2]

(OPV)
###Autonomous Optimization of an Organic Solar Cell in a 4-dimensional Parameter Space|Tobias Osterrieder,Frederik Schmitt,Larry Luer,Jerrit Wagner,Thomas Heumüller,Jens Hauch,Christoph Brabec###
(292146, 292150)
 Optimizing solution-processed organic solar cells is a complex task due tothe vast parameter space in organic photovoltaics (OPV).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[506.0, 40, 'samples', 8],[527.0, 1000, 'samples', 8]

OV
###Autonomous Optimization of an Organic Solar Cell in a 4-dimensional Parameter Space|Tobias Osterrieder,Frederik Schmitt,Larry Luer,Jerrit Wagner,Thomas Heumüller,Jens Hauch,Christoph Brabec###
(292171, 292172)
 Classical Edisonian orone-variable-at-a-time (OVAT) optimization approaches are laborious,time-consuming, and may not find the optimal parameter set in multidimensionaldesign spaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[484.0, 40, 'samples', 7],[505.0, 1000, 'samples', 7]

I
###Autonomous Optimization of an Organic Solar Cell in a 4-dimensional Parameter Space|Tobias Osterrieder,Frederik Schmitt,Larry Luer,Jerrit Wagner,Thomas Heumüller,Jens Hauch,Christoph Brabec###
(292248, 292248)
 To tackle this problem, we demonstrate here for the first timeartificial intelligence (AI) guided closed-loop autonomous optimization forfully functional organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 40, 'samples', 6],[429.0, 1000, 'samples', 6]

(BO)
###Autonomous Optimization of an Organic Solar Cell in a 4-dimensional Parameter Space|Tobias Osterrieder,Frederik Schmitt,Larry Luer,Jerrit Wagner,Thomas Heumüller,Jens Hauch,Christoph Brabec###
(292308, 292311)
 We empower our LineOne, an automatedmaterials and device acceleration platform with a Bayesian Optimizer (BO) toenable autonomous operation for solving complex optimization problems withouthuman interference.
Featurization successful!
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 40, 'samples', 5],[366.0, 1000, 'samples', 5]

OPV
###Autonomous Optimization of an Organic Solar Cell in a 4-dimensional Parameter Space|Tobias Osterrieder,Frederik Schmitt,Larry Luer,Jerrit Wagner,Thomas Heumüller,Jens Hauch,Christoph Brabec###
(292359, 292361)
 The system is able to fabricate and characterize completeOPV devices and navigate efficiently through the design space spanned bycomposition and processing parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 40, 'samples', 4],[316.0, 1000, 'samples', 4]

In
###Autonomous Optimization of an Organic Solar Cell in a 4-dimensional Parameter Space|Tobias Osterrieder,Frederik Schmitt,Larry Luer,Jerrit Wagner,Thomas Heumüller,Jens Hauch,Christoph Brabec###
(292393, 292393)
 In addition, a Gaussian ProgressRegression (GPR) based early prediction model is employed to predict theefficiency of the cells from cheap proxy measurements, in our case, thin filmabsorption spectra, which are analyzed using a spectral model based on physicalproperties to generate microstructure features as input for the GPR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 40, 'samples', 3],[284.0, 1000, 'samples', 3]

OPV
###Autonomous Optimization of an Organic Solar Cell in a 4-dimensional Parameter Space|Tobias Osterrieder,Frederik Schmitt,Larry Luer,Jerrit Wagner,Thomas Heumüller,Jens Hauch,Christoph Brabec###
(292546, 292548)
 Wedemonstrate our generic and complete autonomous approach by optimizingcomposition and processing conditions of a ternary OPV system (PM<missing VAR>6Y12PC70BM)in a four-dimensional parameter space.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 40, 'samples', 2],[129.0, 1000, 'samples', 2]

P
###Autonomous Optimization of an Organic Solar Cell in a 4-dimensional Parameter Space|Tobias Osterrieder,Frederik Schmitt,Larry Luer,Jerrit Wagner,Thomas Heumüller,Jens Hauch,Christoph Brabec###
(292553, 292553)
 Wedemonstrate our generic and complete autonomous approach by optimizingcomposition and processing conditions of a ternary OPV system (PM<missing VAR>6Y12PC70BM)in a four-dimensional parameter space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 40, 'samples', 2],[124.0, 1000, 'samples', 2]

Y12PC70B
###Autonomous Optimization of an Organic Solar Cell in a 4-dimensional Parameter Space|Tobias Osterrieder,Frederik Schmitt,Larry Luer,Jerrit Wagner,Thomas Heumüller,Jens Hauch,Christoph Brabec###
(292556, 292561)
 Wedemonstrate our generic and complete autonomous approach by optimizingcomposition and processing conditions of a ternary OPV system (PM<missing VAR>6Y12PC70BM)in a four-dimensional parameter space.
Featurization terminated normally.
0,0,0,0,0.011904761904761904,0.8333333333333334,0,0,0,0,0,0,0,0,0.011904761904761904,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 40, 'samples', 2],[116.0, 1000, 'samples', 2]

TiO2
###Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$|Conn O'Rourke,David R. Bowler###
(292751, 292753)
Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay A Route to the Restoration of Defective TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$|Conn O'Rourke,David R. Bowler###
(292792, 292792)
 Density functional theory (DFT) and DFT corrected for on-site Coulombinteractions (DFT+U) calculations are presented on Aluminium doping in bulkTiO2 and the anatase (101) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$|Conn O'Rourke,David R. Bowler###
(292812, 292814)
 Density functional theory (DFT) and DFT corrected for on-site Coulombinteractions (DFT+U) calculations are presented on Aluminium doping in bulkTiO2 and the anatase (101) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$|Conn O'Rourke,David R. Bowler###
(292856, 292858)
 Particular attention is paid to themobility of oxygen vacancies throughout the doped TiO2 lattice, as a meansby which charge compensation of trivalent dopants can occur.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$|Conn O'Rourke,David R. Bowler###
(292895, 292895)
 The effect that Aldoping of TiO2 electrodes has in dye sensitised solar cells is explained asa result of this mobility and charge compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$|Conn O'Rourke,David R. Bowler###
(292902, 292904)
 The effect that Aldoping of TiO2 electrodes has in dye sensitised solar cells is explained asa result of this mobility and charge compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$|Conn O'Rourke,David R. Bowler###
(293165, 293167)
 Efficiency in- creases observed in dye sensitised solarcells as a result of aluminium doping of TiO2 electrodes are investigated byadsorbing the tetrahydroquinoline C2-1 chromophore on the defective surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$|Conn O'Rourke,David R. Bowler###
(293184, 293185)
 Efficiency in- creases observed in dye sensitised solarcells as a result of aluminium doping of TiO2 electrodes are investigated byadsorbing the tetrahydroquinoline C2-1 chromophore on the defective surfaces.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Intrinsic Oxygen Vacancy and Extrinsic Aluminium Dopant Interplay: A Route to the Restoration of Defective TiO$_2$|Conn O'Rourke,David R. Bowler###
(293345, 293347)
 Aluminium doping therefore acts as a benign dopantfor cleaning TiO2 through oxygen vacancy diffusion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293400, 293408)
Optical transitions in hybrid perovskite solar cells Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 3.8, 'x', 2],[180.0, 2.0, 'eV', 2],[440.0, 2.53, 'eV', 5],[448.0, 3.24, 'eV', 5]

CH3NH3PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293419, 293427)
 We report artifact-free CH3NH3PbI3 optical constants extracted fromultra-smooth perovskite layers without air exposure and assign all the opticaltransitions in the visible/ultraviolet region unambiguously based on densityfunctional theory (DFT) analysis that assumes a simple pseudo-cubic crystalstructure.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 3.8, 'x', 1],[161.0, 2.0, 'eV', 1],[421.0, 2.53, 'eV', 4],[429.0, 3.24, 'eV', 4]

CH3NH3PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293537, 293545)
 From the self-consistent spectroscopic ellipsometry analysis of theultra-smooth CH3NH3PbI3 layers, we find that the absorption coefficients ofCH3NH3PbI3 (alpha  3.8 x 104 cm-1 at 2.0 eV) are comparable to those ofCuInGaSe2 and CdTe, and high alpha values reported in earlier studies areoverestimated seriously by extensive surface roughness of CH3NH3PbI3 layers.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3.8, 'x', 0],[43.0, 2.0, 'eV', 0],[303.0, 2.53, 'eV', 3],[311.0, 3.24, 'eV', 3]

CH3NH3PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293565, 293573)
 From the self-consistent spectroscopic ellipsometry analysis of theultra-smooth CH3NH3PbI3 layers, we find that the absorption coefficients ofCH3NH3PbI3 (alpha  3.8 x 104 cm-1 at 2.0 eV) are comparable to those ofCuInGaSe2 and CdTe, and high alpha values reported in earlier studies areoverestimated seriously by extensive surface roughness of CH3NH3PbI3 layers.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3.8, 'x', 0],[15.0, 2.0, 'eV', 0],[275.0, 2.53, 'eV', 3],[283.0, 3.24, 'eV', 3]

CuInGaSe2
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293602, 293606)
 From the self-consistent spectroscopic ellipsometry analysis of theultra-smooth CH3NH3PbI3 layers, we find that the absorption coefficients ofCH3NH3PbI3 (alpha  3.8 x 104 cm-1 at 2.0 eV) are comparable to those ofCuInGaSe2 and CdTe, and high alpha values reported in earlier studies areoverestimated seriously by extensive surface roughness of CH3NH3PbI3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3.8, 'x', 0],[14.0, 2.0, 'eV', 0],[242.0, 2.53, 'eV', 3],[250.0, 3.24, 'eV', 3]

CdTe
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293610, 293611)
 From the self-consistent spectroscopic ellipsometry analysis of theultra-smooth CH3NH3PbI3 layers, we find that the absorption coefficients ofCH3NH3PbI3 (alpha  3.8 x 104 cm-1 at 2.0 eV) are comparable to those ofCuInGaSe2 and CdTe, and high alpha values reported in earlier studies areoverestimated seriously by extensive surface roughness of CH3NH3PbI3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 3.8, 'x', 0],[22.0, 2.0, 'eV', 0],[237.0, 2.53, 'eV', 3],[245.0, 3.24, 'eV', 3]

CH3NH3PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293647, 293655)
 From the self-consistent spectroscopic ellipsometry analysis of theultra-smooth CH3NH3PbI3 layers, we find that the absorption coefficients ofCH3NH3PbI3 (alpha  3.8 x 104 cm-1 at 2.0 eV) are comparable to those ofCuInGaSe2 and CdTe, and high alpha values reported in earlier studies areoverestimated seriously by extensive surface roughness of CH3NH3PbI3 layers.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3.8, 'x', 0],[59.0, 2.0, 'eV', 0],[193.0, 2.53, 'eV', 3],[201.0, 3.24, 'eV', 3]

PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293694, 293696)
The polarization-dependent DFT calculations show that CH3NH3+ interactsstrongly with the PbI3- cage, modifying the CH3NH3PbI3 dielectric function inthe visible region rather significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 3.8, 'x', 1],[106.0, 2.0, 'eV', 1],[152.0, 2.53, 'eV', 2],[160.0, 3.24, 'eV', 2]

CH3NH3PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293706, 293714)
The polarization-dependent DFT calculations show that CH3NH3+ interactsstrongly with the PbI3- cage, modifying the CH3NH3PbI3 dielectric function inthe visible region rather significantly.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 3.8, 'x', 1],[118.0, 2.0, 'eV', 1],[134.0, 2.53, 'eV', 2],[142.0, 3.24, 'eV', 2]

CH3NH3PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293774, 293782)
 When the effect of CH3NH3+ on theoptical transition is eliminated in the DFT calculation, CH3NH3PbI3 dielectricfunction deduced from DFT shows excellent agreement with the experimentalresult.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 3.8, 'x', 2],[186.0, 2.0, 'eV', 2],[66.0, 2.53, 'eV', 1],[74.0, 3.24, 'eV', 1]

As
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293813, 293813)
 As a result, distinct optical transitions observed at E<missing VAR>0 (Eg)  1.61e<missing VAR>V, E<missing VAR>1  2.53 eV, and E<missing VAR>2  3.24 eV in CH3NH3PbI3 are attributed to the directsemiconductor-type transitions at the R<missing VAR>, M<missing VAR>, and X<missing VAR> points in the pseudo-cubicBrillouin zone, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 3.8, 'x', 3],[225.0, 2.0, 'eV', 3],[35.0, 2.53, 'eV', 0],[43.0, 3.24, 'eV', 0]

V
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293842, 293842)
 As a result, distinct optical transitions observed at E<missing VAR>0 (Eg)  1.61e<missing VAR>V, E<missing VAR>1  2.53 eV, and E<missing VAR>2  3.24 eV in CH3NH3PbI3 are attributed to the directsemiconductor-type transitions at the R<missing VAR>, M<missing VAR>, and X<missing VAR> points in the pseudo-cubicBrillouin zone, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 3.8, 'x', 3],[254.0, 2.0, 'eV', 3],[6.0, 2.53, 'eV', 0],[14.0, 3.24, 'eV', 0]

CH3NH3PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293860, 293868)
 As a result, distinct optical transitions observed at E<missing VAR>0 (Eg)  1.61e<missing VAR>V, E<missing VAR>1  2.53 eV, and E<missing VAR>2  3.24 eV in CH3NH3PbI3 are attributed to the directsemiconductor-type transitions at the R<missing VAR>, M<missing VAR>, and X<missing VAR> points in the pseudo-cubicBrillouin zone, respectively.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 3.8, 'x', 3],[272.0, 2.0, 'eV', 3],[12.0, 2.53, 'eV', 0],[4.0, 3.24, 'eV', 0]

TiO2
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293961, 293963)
 We further perform the quantum efficiency (QE)analysis for a standard hybrid-perovskite solar cell incorporating a mesoporousTiO2 layer and demonstrate that the QE spectrum can be reproduced almostperfectly when the revised CH3NH3PbI3 optical constants are employed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 3.8, 'x', 4],[373.0, 2.0, 'eV', 4],[113.0, 2.53, 'eV', 1],[105.0, 3.24, 'eV', 1]

CH3NH3PbI3
###Optical transitions in hybrid perovskite solar cells: Ellipsometry, density functional theory, and quantum efficiency analyses for CH3NH3PbI3|Masaki Shirayama,Hideyuki Kadowaki,Tetsuhiko Miyadera,Takeshi Sugita,Masato Tamakoshi,Masato Kato,Takemasa Fujiseki,Daisuke Murata,Shota Hara,Takurou N. Murakami,Shohei Fujimoto,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(293997, 294005)
 We further perform the quantum efficiency (QE)analysis for a standard hybrid-perovskite solar cell incorporating a mesoporousTiO2 layer and demonstrate that the QE spectrum can be reproduced almostperfectly when the revised CH3NH3PbI3 optical constants are employed.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 3.8, 'x', 4],[409.0, 2.0, 'eV', 4],[149.0, 2.53, 'eV', 1],[141.0, 3.24, 'eV', 1]

In
###General Rules for the Impact of Energetic Disorder and Mobility on Nongeminate Recombination in Phase-Separated Organic Solar Cells|Guangzheng Zuo,Safa Shoaee,Martijn Kemerink,Dieter Neher###
(294358, 294358)
 In the former regime, recombination isproportional to mobility for all parameters tested and only slightly reducedwith respect to the Langevin limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###General Rules for the Impact of Energetic Disorder and Mobility on Nongeminate Recombination in Phase-Separated Organic Solar Cells|Guangzheng Zuo,Safa Shoaee,Martijn Kemerink,Dieter Neher###
(294408, 294408)
 In contrast, mobility is not the decisiveparameter determining the non-geminate recombination coefficient k<missing VAR>2in thelatter case where k<missing VAR>2 is a sole function of the morphology, CT<missing VAR> and CSenergetics and CT<missing VAR> states decay properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###General Rules for the Impact of Energetic Disorder and Mobility on Nongeminate Recombination in Phase-Separated Organic Solar Cells|Guangzheng Zuo,Safa Shoaee,Martijn Kemerink,Dieter Neher###
(294469, 294469)
 In contrast, mobility is not the decisiveparameter determining the non-geminate recombination coefficient k<missing VAR>2in thelatter case where k<missing VAR>2 is a sole function of the morphology, CT<missing VAR> and CSenergetics and CT<missing VAR> states decay properties.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CS
###General Rules for the Impact of Energetic Disorder and Mobility on Nongeminate Recombination in Phase-Separated Organic Solar Cells|Guangzheng Zuo,Safa Shoaee,Martijn Kemerink,Dieter Neher###
(294474, 294475)
 In contrast, mobility is not the decisiveparameter determining the non-geminate recombination coefficient k<missing VAR>2in thelatter case where k<missing VAR>2 is a sole function of the morphology, CT<missing VAR> and CSenergetics and CT<missing VAR> states decay properties.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###General Rules for the Impact of Energetic Disorder and Mobility on Nongeminate Recombination in Phase-Separated Organic Solar Cells|Guangzheng Zuo,Safa Shoaee,Martijn Kemerink,Dieter Neher###
(294482, 294482)
 In contrast, mobility is not the decisiveparameter determining the non-geminate recombination coefficient k<missing VAR>2in thelatter case where k<missing VAR>2 is a sole function of the morphology, CT<missing VAR> and CSenergetics and CT<missing VAR> states decay properties.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###General Rules for the Impact of Energetic Disorder and Mobility on Nongeminate Recombination in Phase-Separated Organic Solar Cells|Guangzheng Zuo,Safa Shoaee,Martijn Kemerink,Dieter Neher###
(294543, 294543)
 Our simulations also show that freecharge encounter in the phase-separated disordered blend is determined by theaverage mobility of all carriers, while CT<missing VAR> reformation and resplitting involvesmostly states near the transport energy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###General Rules for the Impact of Energetic Disorder and Mobility on Nongeminate Recombination in Phase-Separated Organic Solar Cells|Guangzheng Zuo,Safa Shoaee,Martijn Kemerink,Dieter Neher###
(294598, 294598)
 Therefore, charge encounter is moreaffected by increased disorder than the resplitting of the CT<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###General Rules for the Impact of Energetic Disorder and Mobility on Nongeminate Recombination in Phase-Separated Organic Solar Cells|Guangzheng Zuo,Safa Shoaee,Martijn Kemerink,Dieter Neher###
(294604, 294604)
 As aconsequence, for a given mobility, larger energetic disorder in combinationwith a higher hopping rate is preferred.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(294780, 294780)
 The Perovskite absorber layer, the electron transport layer (ETL), the holetransport layer (HTL), and the transparent conducting oxide layer (T<missing VAR>CO) are themajor components that make up a Perovskite solar cell.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[482.0, 2.1, 'eV', 9],[491.0, 2.7, 'eV', 9],[494.0, 0.02, 'eV', 9],[538.0, 4.51, 'eV', 10],[548.0, 4.12, 'eV', 10],[568.0, 0.9, 'to', 10]

O
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(294801, 294801)
 The Perovskite absorber layer, the electron transport layer (ETL), the holetransport layer (HTL), and the transparent conducting oxide layer (T<missing VAR>CO) are themajor components that make up a Perovskite solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[461.0, 2.1, 'eV', 9],[470.0, 2.7, 'eV', 9],[473.0, 0.02, 'eV', 9],[517.0, 4.51, 'eV', 10],[527.0, 4.12, 'eV', 10],[547.0, 0.9, 'to', 10]

H
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(294836, 294836)
 Between ETL and HTL, theabsorber layer is sandwiched, on which electron-hole pairs are created afterabsorption of solar radiation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 2.1, 'eV', 8],[435.0, 2.7, 'eV', 8],[438.0, 0.02, 'eV', 8],[482.0, 4.51, 'eV', 9],[492.0, 4.12, 'eV', 9],[512.0, 0.9, 'to', 9]

(TiO2)
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(294935, 294939)
 Present work focusestoward contributing on the later issue by adopting Titanium dioxide (TiO2) asETL and reduced graphene oxide (rGO) as HTL.
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 2.1, 'eV', 6],[332.0, 2.7, 'eV', 6],[335.0, 0.02, 'eV', 6],[379.0, 4.51, 'eV', 7],[389.0, 4.12, 'eV', 7],[409.0, 0.9, 'to', 7]

O
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(294959, 294959)
 Present work focusestoward contributing on the later issue by adopting Titanium dioxide (TiO2) asETL and reduced graphene oxide (rGO) as HTL.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 2.1, 'eV', 6],[312.0, 2.7, 'eV', 6],[315.0, 0.02, 'eV', 6],[359.0, 4.51, 'eV', 7],[369.0, 4.12, 'eV', 7],[389.0, 0.9, 'to', 7]

H
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(294964, 294964)
 Present work focusestoward contributing on the later issue by adopting Titanium dioxide (TiO2) asETL and reduced graphene oxide (rGO) as HTL.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 2.1, 'eV', 6],[307.0, 2.7, 'eV', 6],[310.0, 0.02, 'eV', 6],[354.0, 4.51, 'eV', 7],[364.0, 4.12, 'eV', 7],[384.0, 0.9, 'to', 7]

C
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295005, 295005)
 Specifically, in the present work,we report our efforts on the preparation of compact titanium dioxide (C-TiO2)and mesoporous titanium dioxide (M<missing VAR>-TiO2) layers as an ETL and a reducedgraphene oxide thin film as a HTL.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 2.1, 'eV', 5],[266.0, 2.7, 'eV', 5],[269.0, 0.02, 'eV', 5],[313.0, 4.51, 'eV', 6],[323.0, 4.12, 'eV', 6],[343.0, 0.9, 'to', 6]

O2
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295008, 295009)
 Specifically, in the present work,we report our efforts on the preparation of compact titanium dioxide (C-TiO2)and mesoporous titanium dioxide (M<missing VAR>-TiO2) layers as an ETL and a reducedgraphene oxide thin film as a HTL.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 2.1, 'eV', 5],[262.0, 2.7, 'eV', 5],[265.0, 0.02, 'eV', 5],[309.0, 4.51, 'eV', 6],[319.0, 4.12, 'eV', 6],[339.0, 0.9, 'to', 6]

O2
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295025, 295026)
 Specifically, in the present work,we report our efforts on the preparation of compact titanium dioxide (C-TiO2)and mesoporous titanium dioxide (M<missing VAR>-TiO2) layers as an ETL and a reducedgraphene oxide thin film as a HTL.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2.1, 'eV', 5],[245.0, 2.7, 'eV', 5],[248.0, 0.02, 'eV', 5],[292.0, 4.51, 'eV', 6],[302.0, 4.12, 'eV', 6],[322.0, 0.9, 'to', 6]

H
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295058, 295058)
 Specifically, in the present work,we report our efforts on the preparation of compact titanium dioxide (C-TiO2)and mesoporous titanium dioxide (M<missing VAR>-TiO2) layers as an ETL and a reducedgraphene oxide thin film as a HTL.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 2.1, 'eV', 5],[213.0, 2.7, 'eV', 5],[216.0, 0.02, 'eV', 5],[260.0, 4.51, 'eV', 6],[270.0, 4.12, 'eV', 6],[290.0, 0.9, 'to', 6]

C
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295065, 295065)
 The C-TiO2 film was spin casted on FT<missing VAR>O glassfollowed by casting of M<missing VAR>-TiO2 film using Doctor Blading technique.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 2.1, 'eV', 4],[206.0, 2.7, 'eV', 4],[209.0, 0.02, 'eV', 4],[253.0, 4.51, 'eV', 5],[263.0, 4.12, 'eV', 5],[283.0, 0.9, 'to', 5]

TiO2
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295067, 295069)
 The C-TiO2 film was spin casted on FT<missing VAR>O glassfollowed by casting of M<missing VAR>-TiO2 film using Doctor Blading technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2.1, 'eV', 4],[202.0, 2.7, 'eV', 4],[205.0, 0.02, 'eV', 4],[249.0, 4.51, 'eV', 5],[259.0, 4.12, 'eV', 5],[279.0, 0.9, 'to', 5]

F
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295081, 295081)
 The C-TiO2 film was spin casted on FT<missing VAR>O glassfollowed by casting of M<missing VAR>-TiO2 film using Doctor Blading technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2.1, 'eV', 4],[190.0, 2.7, 'eV', 4],[193.0, 0.02, 'eV', 4],[237.0, 4.51, 'eV', 5],[247.0, 4.12, 'eV', 5],[267.0, 0.9, 'to', 5]

O
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295083, 295083)
 The C-TiO2 film was spin casted on FT<missing VAR>O glassfollowed by casting of M<missing VAR>-TiO2 film using Doctor Blading technique.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2.1, 'eV', 4],[188.0, 2.7, 'eV', 4],[191.0, 0.02, 'eV', 4],[235.0, 4.51, 'eV', 5],[245.0, 4.12, 'eV', 5],[265.0, 0.9, 'to', 5]

TiO2
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295098, 295100)
 The C-TiO2 film was spin casted on FT<missing VAR>O glassfollowed by casting of M<missing VAR>-TiO2 film using Doctor Blading technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2.1, 'eV', 4],[171.0, 2.7, 'eV', 4],[174.0, 0.02, 'eV', 4],[218.0, 4.51, 'eV', 5],[228.0, 4.12, 'eV', 5],[248.0, 0.9, 'to', 5]

O
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295121, 295121)
 Similarly,the rGO film was produced by spray casting over the glass substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2.1, 'eV', 3],[150.0, 2.7, 'eV', 3],[153.0, 0.02, 'eV', 3],[197.0, 4.51, 'eV', 4],[207.0, 4.12, 'eV', 4],[227.0, 0.9, 'to', 4]

H
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295157, 295157)
 Theas-prepared ETL and HTL layers were characterized by measuring their opticalproperties (transmittance and reflectance of thin films).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2.1, 'eV', 2],[114.0, 2.7, 'eV', 2],[117.0, 0.02, 'eV', 2],[161.0, 4.51, 'eV', 3],[171.0, 4.12, 'eV', 3],[191.0, 0.9, 'to', 3]

H
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295226, 295226)
 Then, the bandgap, Egwas extracted from reflectance and transmittance curves for ETL and HTLrespectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2.1, 'eV', 1],[45.0, 2.7, 'eV', 1],[48.0, 0.02, 'eV', 1],[92.0, 4.51, 'eV', 2],[102.0, 4.12, 'eV', 2],[122.0, 0.9, 'to', 2]

In
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295234, 295234)
 In the case of rGO, we found the value of Eg to be 2.1 eV, whichvaries between 2.7eV and 0.02eV depending upon its reduction level based on thepreviously reported values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2.1, 'eV', 0],[37.0, 2.7, 'eV', 0],[40.0, 0.02, 'eV', 0],[84.0, 4.51, 'eV', 1],[94.0, 4.12, 'eV', 1],[114.0, 0.9, 'to', 1]

O
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295244, 295244)
 In the case of rGO, we found the value of Eg to be 2.1 eV, whichvaries between 2.7eV and 0.02eV depending upon its reduction level based on thepreviously reported values.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2.1, 'eV', 0],[27.0, 2.7, 'eV', 0],[30.0, 0.02, 'eV', 0],[74.0, 4.51, 'eV', 1],[84.0, 4.12, 'eV', 1],[104.0, 0.9, 'to', 1]

C
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295311, 295311)
 Similarly, the bandgap of the C-TiO2 was 4.51 eVwhich was reduced to 4.12 eV after the addition of M<missing VAR>-TiO2, which are 0.9 to 1.1e<missing VAR>V higher than previously reported values.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2.1, 'eV', 1],[40.0, 2.7, 'eV', 1],[37.0, 0.02, 'eV', 1],[7.0, 4.51, 'eV', 0],[17.0, 4.12, 'eV', 0],[37.0, 0.9, 'to', 0]

TiO2
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295313, 295315)
 Similarly, the bandgap of the C-TiO2 was 4.51 eVwhich was reduced to 4.12 eV after the addition of M<missing VAR>-TiO2, which are 0.9 to 1.1e<missing VAR>V higher than previously reported values.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 2.1, 'eV', 1],[42.0, 2.7, 'eV', 1],[39.0, 0.02, 'eV', 1],[3.0, 4.51, 'eV', 0],[13.0, 4.12, 'eV', 0],[33.0, 0.9, 'to', 0]

TiO2
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295340, 295342)
 Similarly, the bandgap of the C-TiO2 was 4.51 eVwhich was reduced to 4.12 eV after the addition of M<missing VAR>-TiO2, which are 0.9 to 1.1e<missing VAR>V higher than previously reported values.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2.1, 'eV', 1],[69.0, 2.7, 'eV', 1],[66.0, 0.02, 'eV', 1],[22.0, 4.51, 'eV', 0],[12.0, 4.12, 'eV', 0],[6.0, 0.9, 'to', 0]

V
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295354, 295354)
 Similarly, the bandgap of the C-TiO2 was 4.51 eVwhich was reduced to 4.12 eV after the addition of M<missing VAR>-TiO2, which are 0.9 to 1.1e<missing VAR>V higher than previously reported values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2.1, 'eV', 1],[83.0, 2.7, 'eV', 1],[80.0, 0.02, 'eV', 1],[36.0, 4.51, 'eV', 0],[26.0, 4.12, 'eV', 0],[6.0, 0.9, 'to', 0]

TiO2
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295386, 295388)
 However, bandgap shows decreasingtrend after employing M<missing VAR>- TiO2 over C-TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 2.1, 'eV', 2],[115.0, 2.7, 'eV', 2],[112.0, 0.02, 'eV', 2],[68.0, 4.51, 'eV', 1],[58.0, 4.12, 'eV', 1],[38.0, 0.9, 'to', 1]

C
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295392, 295392)
 However, bandgap shows decreasingtrend after employing M<missing VAR>- TiO2 over C-TiO2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2.1, 'eV', 2],[121.0, 2.7, 'eV', 2],[118.0, 0.02, 'eV', 2],[74.0, 4.51, 'eV', 1],[64.0, 4.12, 'eV', 1],[44.0, 0.9, 'to', 1]

TiO2
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295394, 295396)
 However, bandgap shows decreasingtrend after employing M<missing VAR>- TiO2 over C-TiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2.1, 'eV', 2],[123.0, 2.7, 'eV', 2],[120.0, 0.02, 'eV', 2],[76.0, 4.51, 'eV', 1],[66.0, 4.12, 'eV', 1],[46.0, 0.9, 'to', 1]

In
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295399, 295399)
 In a Perovskite solar cell, both ETLand HTL will be investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2.1, 'eV', 3],[128.0, 2.7, 'eV', 3],[125.0, 0.02, 'eV', 3],[81.0, 4.51, 'eV', 2],[71.0, 4.12, 'eV', 2],[51.0, 0.9, 'to', 2]

H
###Deposition of Reduced Graphene Oxide Thin Film by Spray Pyrolysis Method for Perovskite Solar Cell|Manoj Pandey,Dipendra Hamal,Deepak Subedi,Bijaya Basnet,Rajaram Sah,Santosh K. Tiwari,Bhim Kafle###
(295419, 295419)
 In a Perovskite solar cell, both ETLand HTL will be investigated.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2.1, 'eV', 3],[148.0, 2.7, 'eV', 3],[145.0, 0.02, 'eV', 3],[101.0, 4.51, 'eV', 2],[91.0, 4.12, 'eV', 2],[71.0, 0.9, 'to', 2]

Cs
###Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells|A. V. Sachenko,A. I. Shkrebtii,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi###
(295484, 295484)
 To accurately calculate efficiencies eta of experimentally producedmultijunction solar cells (MJSCs) and optimize their parameters, we offersemi-analytical photoconversion formalism that incorporates radiativerecombination, Shockley-Read-Hall (SR<missing VAR>H) recombination, surface recombination atthe front and back surfaces of the cells, recombination in the space chargeregion (SCR) and the recombination at the heterojunction boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells|A. V. Sachenko,A. I. Shkrebtii,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi###
(295526, 295526)
 To accurately calculate efficiencies eta of experimentally producedmultijunction solar cells (MJSCs) and optimize their parameters, we offersemi-analytical photoconversion formalism that incorporates radiativerecombination, Shockley-Read-Hall (SR<missing VAR>H) recombination, surface recombination atthe front and back surfaces of the cells, recombination in the space chargeregion (SCR) and the recombination at the heterojunction boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells|A. V. Sachenko,A. I. Shkrebtii,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi###
(295528, 295528)
 To accurately calculate efficiencies eta of experimentally producedmultijunction solar cells (MJSCs) and optimize their parameters, we offersemi-analytical photoconversion formalism that incorporates radiativerecombination, Shockley-Read-Hall (SR<missing VAR>H) recombination, surface recombination atthe front and back surfaces of the cells, recombination in the space chargeregion (SCR) and the recombination at the heterojunction boundaries.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells|A. V. Sachenko,A. I. Shkrebtii,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi###
(295572, 295573)
 To accurately calculate efficiencies eta of experimentally producedmultijunction solar cells (MJSCs) and optimize their parameters, we offersemi-analytical photoconversion formalism that incorporates radiativerecombination, Shockley-Read-Hall (SR<missing VAR>H) recombination, surface recombination atthe front and back surfaces of the cells, recombination in the space chargeregion (SCR) and the recombination at the heterojunction boundaries.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells|A. V. Sachenko,A. I. Shkrebtii,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi###
(295603, 295604)
Selfconsistent balance between the MJSC temperature and efficiency was imposedby jointly solving the equations for the photocurrent, photovoltage, and heatbalance.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells|A. V. Sachenko,A. I. Shkrebtii,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi###
(295731, 295732)
 It is shown that for anexperimentally observed Shockley-Read-Hall lifetimes, the effect ofre-absorption and re-emission of photons on MJSC efficiency can be neglectedfor non-concentrated radiation conditions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells|A. V. Sachenko,A. I. Shkrebtii,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi###
(295794, 295795)
 A significant efficiency etaincrease can be achieved by improving the heat dissipation using radiators andbringing the MJSC emissivity to unity, that is closer to black body radiationrather than grey body radiation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Selfconsistent Model of Photoconversion Efficiency for Multijunction Solar Cells|A. V. Sachenko,A. I. Shkrebtii,V. P. Kostylyov,M. R. Kulish,I. O. Sokolovskyi###
(295890, 295891)
 The formalism can be used to optimize parameters ofMJSCs for maximum photoconversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SCs)
###A new approach to simulation of limiting photoconversion efficiency of tandem solar cells|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(295972, 295975)
 We develop a new approach to calculate the obtainable limit ofphotoconversion efficiency of tandem solar cells (SCs) and applied it to SCswith both vertical and lateral designs at AM<missing VAR>0 and AM<missing VAR>1.5 conditions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###A new approach to simulation of limiting photoconversion efficiency of tandem solar cells|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(295985, 295986)
 We develop a new approach to calculate the obtainable limit ofphotoconversion efficiency of tandem solar cells (SCs) and applied it to SCswith both vertical and lateral designs at AM<missing VAR>0 and AM<missing VAR>1.5 conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###A new approach to simulation of limiting photoconversion efficiency of tandem solar cells|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(296061, 296063)
 To get themaximum efficiency, only radiative recombination has been considered usingtypical radiative recombination parameters of the direct band gap III-Vsemiconductors, and explicit energy dependence of light absorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###A new approach to simulation of limiting photoconversion efficiency of tandem solar cells|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(296065, 296065)
 To get themaximum efficiency, only radiative recombination has been considered usingtypical radiative recombination parameters of the direct band gap III-Vsemiconductors, and explicit energy dependence of light absorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###A new approach to simulation of limiting photoconversion efficiency of tandem solar cells|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(296127, 296128)
 Whensimulating the efficiency, we selfconsistently took into account the fact thatthe amount of the heat dissipated by SC decreases as the number ofcurrent-matched sub-cells increases.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###A new approach to simulation of limiting photoconversion efficiency of tandem solar cells|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(296152, 296152)
 As the operating SCs temperature decreasesboth the open-circuit voltage and the photoconversion efficiency increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###A new approach to simulation of limiting photoconversion efficiency of tandem solar cells|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(296158, 296159)
 As the operating SCs temperature decreasesboth the open-circuit voltage and the photoconversion efficiency increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###A new approach to simulation of limiting photoconversion efficiency of tandem solar cells|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(296210, 296211)
 Itis shown that the above effect is especially strong for SCs operating under AM<missing VAR>0conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###A new approach to simulation of limiting photoconversion efficiency of tandem solar cells|A. V. Sachenko,V. P. Kostylyov,N. P. Kulish,I. O. Sokolovskyi,A. I. Shkrebtii###
(296225, 296225)
 As the number of subcells is increased, narrowing the spectralrange for each subcell, the photocurrent is additionally reduced due to theenergy dependent light absorption, the factor generally ignored in the standardapproaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296418, 296419)
Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 11.1, '%', 6],[245.0, 10.81, '%', 6],[264.0, 1500, 'cm', 6],[274.0, 300, 'cm', 6],[302.0, 3, 'ns', 6],[305.0, 7, 'ns', 6],[358.0, 13.75, '%', 7],[378.0, 103, 'ms', 7]

PIN
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296421, 296423)
Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 11.1, '%', 6],[241.0, 10.81, '%', 6],[260.0, 1500, 'cm', 6],[270.0, 300, 'cm', 6],[298.0, 3, 'ns', 6],[301.0, 7, 'ns', 6],[354.0, 13.75, '%', 7],[374.0, 103, 'ms', 7]

(SC)
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296501, 296504)
 Different types of solar cells (SC)are commercially available.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 11.1, '%', 4],[160.0, 10.81, '%', 4],[179.0, 1500, 'cm', 4],[189.0, 300, 'cm', 4],[217.0, 3, 'ns', 4],[220.0, 7, 'ns', 4],[273.0, 13.75, '%', 5],[293.0, 103, 'ms', 5]

SC
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296542, 296543)
 However, various parameters need to be optimized toget maximum efficiency from a SC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 11.1, '%', 3],[121.0, 10.81, '%', 3],[140.0, 1500, 'cm', 3],[150.0, 300, 'cm', 3],[178.0, 3, 'ns', 3],[181.0, 7, 'ns', 3],[234.0, 13.75, '%', 4],[254.0, 103, 'ms', 4]

In
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296546, 296546)
 In this study we have presented a SC model inwhich dependence of quantum efficiency (QE) on various parameters has beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 11.1, '%', 2],[118.0, 10.81, '%', 2],[137.0, 1500, 'cm', 2],[147.0, 300, 'cm', 2],[175.0, 3, 'ns', 2],[178.0, 7, 'ns', 2],[231.0, 13.75, '%', 3],[251.0, 103, 'ms', 3]

SC
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296560, 296561)
 In this study we have presented a SC model inwhich dependence of quantum efficiency (QE) on various parameters has beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 11.1, '%', 2],[103.0, 10.81, '%', 2],[122.0, 1500, 'cm', 2],[132.0, 300, 'cm', 2],[160.0, 3, 'ns', 2],[163.0, 7, 'ns', 2],[216.0, 13.75, '%', 3],[236.0, 103, 'ms', 3]

V
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296685, 296685)
 Results show that maximum efficienciescan be achieved up to 11.10% and 10.81% keeping the electron and hole mobilityto be 1500 cm2V-1s<missing VAR>-1 and 300 cm2V-1s<missing VAR>-1 respectively with electron and holecarrier LT to be 3ns and 7ns respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 11.1, '%', 0],[21.0, 10.81, '%', 0],[2.0, 1500, 'cm', 0],[8.0, 300, 'cm', 0],[36.0, 3, 'ns', 0],[39.0, 7, 'ns', 0],[92.0, 13.75, '%', 1],[112.0, 103, 'ms', 1]

V
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296695, 296695)
 Results show that maximum efficienciescan be achieved up to 11.10% and 10.81% keeping the electron and hole mobilityto be 1500 cm2V-1s<missing VAR>-1 and 300 cm2V-1s<missing VAR>-1 respectively with electron and holecarrier LT to be 3ns and 7ns respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 11.1, '%', 0],[31.0, 10.81, '%', 0],[12.0, 1500, 'cm', 0],[2.0, 300, 'cm', 0],[26.0, 3, 'ns', 0],[29.0, 7, 'ns', 0],[82.0, 13.75, '%', 1],[102.0, 103, 'ms', 1]

S
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296743, 296743)
 The effect of surface recombinationvelocity (SR<missing VAR>V) has also been brought under observation and the maximumefficiency is found to be 13.75% at electron and hole SR<missing VAR>V equal to be 103ms-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 11.1, '%', 1],[79.0, 10.81, '%', 1],[60.0, 1500, 'cm', 1],[50.0, 300, 'cm', 1],[22.0, 3, 'ns', 1],[19.0, 7, 'ns', 1],[34.0, 13.75, '%', 0],[54.0, 103, 'ms', 0]

V
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296745, 296745)
 The effect of surface recombinationvelocity (SR<missing VAR>V) has also been brought under observation and the maximumefficiency is found to be 13.75% at electron and hole SR<missing VAR>V equal to be 103ms-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 11.1, '%', 1],[81.0, 10.81, '%', 1],[62.0, 1500, 'cm', 1],[52.0, 300, 'cm', 1],[24.0, 3, 'ns', 1],[21.0, 7, 'ns', 1],[32.0, 13.75, '%', 0],[52.0, 103, 'ms', 0]

S
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296788, 296788)
 The effect of surface recombinationvelocity (SR<missing VAR>V) has also been brought under observation and the maximumefficiency is found to be 13.75% at electron and hole SR<missing VAR>V equal to be 103ms-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 11.1, '%', 1],[124.0, 10.81, '%', 1],[105.0, 1500, 'cm', 1],[95.0, 300, 'cm', 1],[67.0, 3, 'ns', 1],[64.0, 7, 'ns', 1],[11.0, 13.75, '%', 0],[9.0, 103, 'ms', 0]

V
###Modelling and Simulation of of high efficiency GaAs PIN-Solar Cell|Ali Imran,Deborah Eric,Muhammad Noaman Zahid,Muhammad Yousaf###
(296790, 296790)
 The effect of surface recombinationvelocity (SR<missing VAR>V) has also been brought under observation and the maximumefficiency is found to be 13.75% at electron and hole SR<missing VAR>V equal to be 103ms-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 11.1, '%', 1],[126.0, 10.81, '%', 1],[107.0, 1500, 'cm', 1],[97.0, 300, 'cm', 1],[69.0, 3, 'ns', 1],[66.0, 7, 'ns', 1],[13.0, 13.75, '%', 0],[7.0, 103, 'ms', 0]

Si
###Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell|Reza Asadpour,Raghu V. K. Chavali,M. Ryyan Khan,Muhammad A. Alam###
(296863, 296863)
Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 24, '%', 5],[251.0, 20, '%', 5],[274.0, 25, '%', 5],[365.0, 33, '%', 7]

As
###Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell|Reza Asadpour,Raghu V. K. Chavali,M. Ryyan Khan,Muhammad A. Alam###
(296888, 296888)
 As single junction thin-film technologies, both Si heterojunction (HIT) andPerovskite based solar cells promise high efficiencies at low cost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 24, '%', 4],[226.0, 20, '%', 4],[249.0, 25, '%', 4],[340.0, 33, '%', 6]

Si
###Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell|Reza Asadpour,Raghu V. K. Chavali,M. Ryyan Khan,Muhammad A. Alam###
(296903, 296903)
 As single junction thin-film technologies, both Si heterojunction (HIT) andPerovskite based solar cells promise high efficiencies at low cost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 24, '%', 4],[211.0, 20, '%', 4],[234.0, 25, '%', 4],[325.0, 33, '%', 6]

HI
###Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell|Reza Asadpour,Raghu V. K. Chavali,M. Ryyan Khan,Muhammad A. Alam###
(296908, 296909)
 As single junction thin-film technologies, both Si heterojunction (HIT) andPerovskite based solar cells promise high efficiencies at low cost.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 24, '%', 4],[205.0, 20, '%', 4],[228.0, 25, '%', 4],[319.0, 33, '%', 6]

HI
###Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell|Reza Asadpour,Raghu V. K. Chavali,M. Ryyan Khan,Muhammad A. Alam###
(297100, 297101)
 Specifically, a traditional tandemcell with state-of-the-art HIT<missing VAR> (24%) and Perovskite (20%) sub-cells providesonly a modest tandem efficiency of 25%.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 24, '%', 0],[13.0, 20, '%', 0],[36.0, 25, '%', 0],[127.0, 33, '%', 2]

HI
###Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell|Reza Asadpour,Raghu V. K. Chavali,M. Ryyan Khan,Muhammad A. Alam###
(297155, 297156)
 Instead, we demonstrate that abifacial HIT<missing VAR>/Perovskite tandem design decouples the optoelectronic constraintsand provides an innovative path for extraordinary efficiencies.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 24, '%', 1],[41.0, 20, '%', 1],[18.0, 25, '%', 1],[72.0, 33, '%', 1]

In
###Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell|Reza Asadpour,Raghu V. K. Chavali,M. Ryyan Khan,Muhammad A. Alam###
(297191, 297191)
 In the bifacialconfiguration, the same state-of the-art sub-cells achieve a normalized outputof 33%, exceeding the bifacial HIT<missing VAR> performance at practical albedo reflections.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 24, '%', 2],[77.0, 20, '%', 2],[54.0, 25, '%', 2],[37.0, 33, '%', 0]

HI
###Bifacial Si Heterojunction-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell|Reza Asadpour,Raghu V. K. Chavali,M. Ryyan Khan,Muhammad A. Alam###
(297238, 297239)
 In the bifacialconfiguration, the same state-of the-art sub-cells achieve a normalized outputof 33%, exceeding the bifacial HIT<missing VAR> performance at practical albedo reflections.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 24, '%', 2],[124.0, 20, '%', 2],[101.0, 25, '%', 2],[10.0, 33, '%', 0]

Cu
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297339, 297339)
First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 20, '%', 1]

Cu
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297346, 297346)
 Cu-based chalcogenides are promising materials for thin-film solar cells withmore than 20% measured cell efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 20, '%', 0]

Cu
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297420, 297420)
 Using first-principles calculationsbased on density functional theory, the optoelectronic properties of a group ofCu-based chalcogenides Cu2-II-IV-VI4 is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 20, '%', 1]

Cu2
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297426, 297427)
 Using first-principles calculationsbased on density functional theory, the optoelectronic properties of a group ofCu-based chalcogenides Cu2-II-IV-VI4 is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 20, '%', 1]

II
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297429, 297430)
 Using first-principles calculationsbased on density functional theory, the optoelectronic properties of a group ofCu-based chalcogenides Cu2-II-IV-VI4 is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 20, '%', 1]

IV
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297432, 297433)
 Using first-principles calculationsbased on density functional theory, the optoelectronic properties of a group ofCu-based chalcogenides Cu2-II-IV-VI4 is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 20, '%', 1]

VI4
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297435, 297437)
 Using first-principles calculationsbased on density functional theory, the optoelectronic properties of a group ofCu-based chalcogenides Cu2-II-IV-VI4 is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 20, '%', 1]

S
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297488, 297488)
 The spectroscopic limited maximum efficiency (SLME) introduced byYu and Zunger is used as a metric for the screening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 20, '%', 3]

Cu2
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297640, 297641)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 20, '%', 6]

II
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297643, 297644)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 20, '%', 6]

GeSe4
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297646, 297648)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 20, '%', 6]

IICd
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297652, 297654)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 20, '%', 6]

Hg
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297658, 297658)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 20, '%', 6]

Cu2
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297664, 297665)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 20, '%', 6]

II
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297667, 297668)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 20, '%', 6]

SnS4
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297670, 297672)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 20, '%', 6]

IICd
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297676, 297678)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 20, '%', 6]

Zn
###First-principles study of the optoelectronic properties and photovoltaic absorber layer efficiency of Cu-based chalcogenides|Nasrin Sarmadian,Rolando Saniz,Bart Partoens,Dirk Lamoen###
(297682, 297682)
 Our results show that Cu2-II-GeSe4 with IICd and Hg, andCu2-II-SnS4 with IICd and Zn have a higher theoretical efficiencycompared to the materials currently used as absorber layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 20, '%', 6]

Ds
###High-efficiency perovskite-polymer bulk heterostructure light-emitting diodes|Baodan Zhao,Sai Bai,Vincent Kim,Robin Lamboll,Ravichandran Shivanna,Florian Auras,Johannes M. Richter,Le Yang,Linjie Dai,Mejd Alsari,Xiao-Jian She,Lusheng Liang,Jiangbin Zhang,Samuele Lilliu,Peng Gao,Henry J. Snaith,Jianpu Wang,Neil C. Greenham,Richard H. Friend,Dawei Di###
(297803, 297803)
 However, for perovskite light-emitting diodes (LEDs), non-radiativecharge carrier recombination has limited electroluminescence (EL) efficiency.
EXCEPTION 3: IndexError for Ds
Ds
[69.0, 20, '%', 1],[86.0, 46, 'hours', 1],[120.0, 3, 'D', 2],[173.0, 1, 'ps', 3],[210.0, 3, 'D', 4],[312.0, -30, '%', 6],[337.0, 20, '%', 6],[375.0, 100, '%', 6]

In
###Percolation assisted excitation transport in discrete-time quantum walks|Martin Stefanak,Jaroslav Novotny,Igor Jex###
(299049, 299049)
 In such a case, the survival probability does not vanish andthe excitation transport is not efficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299339, 299339)
 In this work, we show that it isthe absolute content of water measured in the form of partial water vapourpressure (WVP) the only determining control parameter that needs to beconsidered during preparation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 23, '%', 2],[346.0, 1.6, 'kPa', 5]

(WVP)
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299386, 299390)
 In this work, we show that it isthe absolute content of water measured in the form of partial water vapourpressure (WVP) the only determining control parameter that needs to beconsidered during preparation.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 23, '%', 2],[295.0, 1.6, 'kPa', 5]

PbI3
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299427, 299429)
 Following this perspective, M<missing VAR>APbI3 perovskitefilms were deposited under different WVP by changing the relative humidity (R<missing VAR>H)and the lab temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 23, '%', 3],[256.0, 1.6, 'kPa', 4]

WVP
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299444, 299446)
 Following this perspective, M<missing VAR>APbI3 perovskitefilms were deposited under different WVP by changing the relative humidity (R<missing VAR>H)and the lab temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 23, '%', 3],[239.0, 1.6, 'kPa', 4]

H
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299460, 299460)
 Following this perspective, M<missing VAR>APbI3 perovskitefilms were deposited under different WVP by changing the relative humidity (R<missing VAR>H)and the lab temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 23, '%', 3],[225.0, 1.6, 'kPa', 4]

WVP
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299502, 299504)
 We found that efficient and reproducible devices canbe obtained at given values of WVP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 23, '%', 4],[181.0, 1.6, 'kPa', 3]

H
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299539, 299539)
 Furthermore, it is demonstrated that smalltemperature changes, at the same value of the R<missing VAR>H, result in huge changes inperformance, due to the non-linear dependence of the WVP on temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 23, '%', 5],[146.0, 1.6, 'kPa', 2]

WVP
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299572, 299574)
 Furthermore, it is demonstrated that smalltemperature changes, at the same value of the R<missing VAR>H, result in huge changes inperformance, due to the non-linear dependence of the WVP on temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 23, '%', 5],[111.0, 1.6, 'kPa', 2]

F
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299600, 299600)
 Wehave extended the procedure to accomplish high-efficient FA0.83M<missing VAR>A0.17PbI3devices at ambient conditions by adjusting DMSO proportion in precursorsolution as a function of WVP only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 23, '%', 6],[85.0, 1.6, 'kPa', 1]

PbI3
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299606, 299608)
 Wehave extended the procedure to accomplish high-efficient FA0.83M<missing VAR>A0.17PbI3devices at ambient conditions by adjusting DMSO proportion in precursorsolution as a function of WVP only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 23, '%', 6],[77.0, 1.6, 'kPa', 1]

SO
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299625, 299626)
 Wehave extended the procedure to accomplish high-efficient FA0.83M<missing VAR>A0.17PbI3devices at ambient conditions by adjusting DMSO proportion in precursorsolution as a function of WVP only.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 23, '%', 6],[59.0, 1.6, 'kPa', 1]

WVP
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299645, 299647)
 Wehave extended the procedure to accomplish high-efficient FA0.83M<missing VAR>A0.17PbI3devices at ambient conditions by adjusting DMSO proportion in precursorsolution as a function of WVP only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[410.0, 23, '%', 6],[38.0, 1.6, 'kPa', 1]

As
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299652, 299652)
 As an example of the relevance of thisparamater, a WVP value of around of 1.6 kPa appears to be an upper limit forsafe fabrication of high efficiency devices at ambient conditions, regardlessthe R<missing VAR>H and lab temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[417.0, 23, '%', 7],[33.0, 1.6, 'kPa', 0]

WVP
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299674, 299676)
 As an example of the relevance of thisparamater, a WVP value of around of 1.6 kPa appears to be an upper limit forsafe fabrication of high efficiency devices at ambient conditions, regardlessthe R<missing VAR>H and lab temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[439.0, 23, '%', 7],[9.0, 1.6, 'kPa', 0]

H
###Water vapour pressure as determining control parameter to fabricate high efficiency perovskite solar cells at ambient conditions|Lidia Contreras-Bernal,Juan Jesus Gallardo,Javier Navas,Jesus Idigoras,Juan A. Anta###
(299727, 299727)
 As an example of the relevance of thisparamater, a WVP value of around of 1.6 kPa appears to be an upper limit forsafe fabrication of high efficiency devices at ambient conditions, regardlessthe R<missing VAR>H and lab temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[492.0, 23, '%', 7],[42.0, 1.6, 'kPa', 0]

(PV)
###Passive radiative cooling impact on commercial crystalline silicon-based photovoltaics|George Perrakis,Anna C. Tasolamprou,George Kenanakis,Eleftherios N. Economou,Stelios Tzortzakis,Maria Kafesaki###
(299890, 299893)
 Dueto the increased heating in photovoltaic (PV) devices, that has significantadverse consequences on both their efficiency and life-time, and inspired bythe recent advances in daytime radiative cooling, we developed a coupledthermal-electrical modeling to examine the physical mechanisms on how aradiative cooler affects the overall efficiency of commercial photovoltaicmodules.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'D', 2]

PV
###Passive radiative cooling impact on commercial crystalline silicon-based photovoltaics|George Perrakis,Anna C. Tasolamprou,George Kenanakis,Eleftherios N. Economou,Stelios Tzortzakis,Maria Kafesaki###
(300038, 300039)
 Employing this modeling, which takes into account all the majorprocesses affected by the temperature variation in a PV device, we evaluatedthe relative impact of the main radiative cooling approaches proposed so far onthe PV efficiency, and we established required conditions for optimizedradiative cooling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'D', 3]

PV
###Passive radiative cooling impact on commercial crystalline silicon-based photovoltaics|George Perrakis,Anna C. Tasolamprou,George Kenanakis,Eleftherios N. Economou,Stelios Tzortzakis,Maria Kafesaki###
(300078, 300079)
 Employing this modeling, which takes into account all the majorprocesses affected by the temperature variation in a PV device, we evaluatedthe relative impact of the main radiative cooling approaches proposed so far onthe PV efficiency, and we established required conditions for optimizedradiative cooling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 2, 'D', 3]

PV
###Passive radiative cooling impact on commercial crystalline silicon-based photovoltaics|George Perrakis,Anna C. Tasolamprou,George Kenanakis,Eleftherios N. Economou,Stelios Tzortzakis,Maria Kafesaki###
(300126, 300127)
 Moreover, we identified the validity regimes of thecurrently existing PV-cooling models which treat the PV coolers as simplethermal emitters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 2, 'D', 4]

PV
###Passive radiative cooling impact on commercial crystalline silicon-based photovoltaics|George Perrakis,Anna C. Tasolamprou,George Kenanakis,Eleftherios N. Economou,Stelios Tzortzakis,Maria Kafesaki###
(300139, 300140)
 Moreover, we identified the validity regimes of thecurrently existing PV-cooling models which treat the PV coolers as simplethermal emitters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 2, 'D', 4]

PV
###Passive radiative cooling impact on commercial crystalline silicon-based photovoltaics|George Perrakis,Anna C. Tasolamprou,George Kenanakis,Eleftherios N. Economou,Stelios Tzortzakis,Maria Kafesaki###
(300219, 300220)
 Finally, we assessed some realistic photonic coolers from theliterature, compatible with photovoltaics, to implement the radiative coolingrequirements, and demonstrated their associated impact on the temperaturereduction and PV efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 2, 'D', 5]

PV
###Passive radiative cooling impact on commercial crystalline silicon-based photovoltaics|George Perrakis,Anna C. Tasolamprou,George Kenanakis,Eleftherios N. Economou,Stelios Tzortzakis,Maria Kafesaki###
(300290, 300291)
 Providing the physical mechanisms and requirementsfor cooling radiatively solar cells, our study provides guidelines forutilizing suitable photonic structures as radiative coolers, enhancing theefficiency and the lifetime of PV devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[470.0, 2, 'D', 6]

II
###Modelling of limitations of bulk heterojunction architecture in organic solar cells II: 3d model|Jacek Wojtkiewicz,Marek Pilch###
(300326, 300327)
Modelling of limitations of bulk heterojunction architecture in organic solar cells II 3d model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 3, 'd', 0],[117.0, 12, '%', 4],[128.0, 15, '%', 4],[334.0, 40, '%', 8]

In
###Modelling of limitations of bulk heterojunction architecture in organic solar cells II: 3d model|Jacek Wojtkiewicz,Marek Pilch###
(300407, 300407)
 In the most popular BHJ<missing VAR> (bulk heterojunction) architecture theactual long-standing top efficiency is about 12% (recent achievements about15%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3, 'd', 4],[37.0, 12, '%', 0],[48.0, 15, '%', 0],[254.0, 40, '%', 4]

BH
###Modelling of limitations of bulk heterojunction architecture in organic solar cells II: 3d model|Jacek Wojtkiewicz,Marek Pilch###
(300415, 300416)
 In the most popular BHJ<missing VAR> (bulk heterojunction) architecture theactual long-standing top efficiency is about 12% (recent achievements about15%).
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 3, 'd', 4],[28.0, 12, '%', 0],[39.0, 15, '%', 0],[245.0, 40, '%', 4]

In
###Modelling of limitations of bulk heterojunction architecture in organic solar cells II: 3d model|Jacek Wojtkiewicz,Marek Pilch###
(300507, 300507)
 Inour paper we analyze the geometric factor as one of possible explanation ofrelatively low efficiency of BHJ<missing VAR> architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 3, 'd', 6],[63.0, 12, '%', 2],[52.0, 15, '%', 2],[154.0, 40, '%', 2]

BH
###Modelling of limitations of bulk heterojunction architecture in organic solar cells II: 3d model|Jacek Wojtkiewicz,Marek Pilch###
(300545, 300546)
 Inour paper we analyze the geometric factor as one of possible explanation ofrelatively low efficiency of BHJ<missing VAR> architecture.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 3, 'd', 6],[101.0, 12, '%', 2],[90.0, 15, '%', 2],[115.0, 40, '%', 2]

In
###Modelling of limitations of bulk heterojunction architecture in organic solar cells II: 3d model|Jacek Wojtkiewicz,Marek Pilch###
(300617, 300617)
 In our previous calculation for the two dimensional model, wehave found that the maximal value of geometric factor was about 40%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 3, 'd', 8],[173.0, 12, '%', 4],[162.0, 15, '%', 4],[44.0, 40, '%', 0]

In
###Modelling of limitations of bulk heterojunction architecture in organic solar cells II: 3d model|Jacek Wojtkiewicz,Marek Pilch###
(300665, 300665)
 In theactual three dimensional model, it turned out that both architectures give veryclose value of the effective area.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 3, 'd', 9],[221.0, 12, '%', 5],[210.0, 15, '%', 5],[4.0, 40, '%', 1]

BH
###Modelling of limitations of bulk heterojunction architecture in organic solar cells II: 3d model|Jacek Wojtkiewicz,Marek Pilch###
(300797, 300798)
 Implications of this fact arediscussed we list two other factors (mentioned but not thoroughly discussed inliterature) which can be responsible for limitations of efficiency of BHJ<missing VAR>architecture.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[469.0, 3, 'd', 11],[353.0, 12, '%', 7],[342.0, 15, '%', 7],[136.0, 40, '%', 3]

S
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301354, 301354)
 Solar modules are currently characterized at standard test conditions (ST<missing VAR>C),defined at 1000W/m<missing VAR>2 and 25 degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1000, 'W', 0],[321.0, 0.4, 'to', 6],[322.0, 0.8, 'percent', 6]

C
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301356, 301356)
 Solar modules are currently characterized at standard test conditions (ST<missing VAR>C),defined at 1000W/m<missing VAR>2 and 25 degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1000, 'W', 0],[319.0, 0.4, 'to', 6],[320.0, 0.8, 'percent', 6]

C
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301374, 301374)
 Solar modules are currently characterized at standard test conditions (ST<missing VAR>C),defined at 1000W/m<missing VAR>2 and 25 degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1000, 'W', 0],[301.0, 0.4, 'to', 6],[302.0, 0.8, 'percent', 6]

S
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301414, 301414)
 However, solar modules in actual outdooroperating conditions typically operate at lower illumination and highertemperature than ST<missing VAR>C, which significantly affects their performance ratio(average harvesting efficiency over efficiency in ST<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1000, 'W', 1],[261.0, 0.4, 'to', 5],[262.0, 0.8, 'percent', 5]

C
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301416, 301416)
 However, solar modules in actual outdooroperating conditions typically operate at lower illumination and highertemperature than ST<missing VAR>C, which significantly affects their performance ratio(average harvesting efficiency over efficiency in ST<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1000, 'W', 1],[259.0, 0.4, 'to', 5],[260.0, 0.8, 'percent', 5]

S
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301445, 301445)
 However, solar modules in actual outdooroperating conditions typically operate at lower illumination and highertemperature than ST<missing VAR>C, which significantly affects their performance ratio(average harvesting efficiency over efficiency in ST<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1000, 'W', 1],[230.0, 0.4, 'to', 5],[231.0, 0.8, 'percent', 5]

C
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301447, 301447)
 However, solar modules in actual outdooroperating conditions typically operate at lower illumination and highertemperature than ST<missing VAR>C, which significantly affects their performance ratio(average harvesting efficiency over efficiency in ST<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1000, 'W', 1],[228.0, 0.4, 'to', 5],[229.0, 0.8, 'percent', 5]

SH
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301457, 301458)
 Silicon heterojunction(SHJ) technology displays both good temperature coefficient and goodlow-illumination performances, leading to outstanding performance ratios.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1000, 'W', 2],[217.0, 0.4, 'to', 4],[218.0, 0.8, 'percent', 4]

SH
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301504, 301505)
 Weinvestigate here SHJ<missing VAR> solar cells that use a-SiCx(n) layer as front doped layerwith different carbon contents under different climates conditions.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1000, 'W', 3],[170.0, 0.4, 'to', 3],[171.0, 0.8, 'percent', 3]

Si
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301518, 301518)
 Weinvestigate here SHJ<missing VAR> solar cells that use a-SiCx(n) layer as front doped layerwith different carbon contents under different climates conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1000, 'W', 3],[157.0, 0.4, 'to', 3],[158.0, 0.8, 'percent', 3]

S
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301606, 301606)
 Addingcarbon increases transparency but also resistive losses at room temperature(compared with carbon-free layers), leading to a significant decrease inefficiency at ST<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 1000, 'W', 4],[69.0, 0.4, 'to', 2],[70.0, 0.8, 'percent', 2]

C
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301608, 301608)
 Addingcarbon increases transparency but also resistive losses at room temperature(compared with carbon-free layers), leading to a significant decrease inefficiency at ST<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 1000, 'W', 4],[67.0, 0.4, 'to', 2],[68.0, 0.8, 'percent', 2]

S
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301625, 301625)
 We demonstrate that despite this difference at ST<missing VAR>C, thedifference in energy harvesting efficiency is much smaller in all investigatedclimates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 1000, 'W', 5],[50.0, 0.4, 'to', 1],[51.0, 0.8, 'percent', 1]

C
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301627, 301627)
 We demonstrate that despite this difference at ST<missing VAR>C, thedifference in energy harvesting efficiency is much smaller in all investigatedclimates.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 1000, 'W', 5],[48.0, 0.4, 'to', 1],[49.0, 0.8, 'percent', 1]

S
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301731, 301731)
 Furthermore, we show that a relative gain of 0.4 to 0.8 percent inharvesting efficiency is possible by adding a certain content of carbon in thefront (n) layer, compared with carbon-free cells optimized for ST<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 1000, 'W', 6],[56.0, 0.4, 'to', 0],[55.0, 0.8, 'percent', 0]

C
###Optimized Design of Silicon Heterojunction Solar Cells for Field Operating Conditions|Jean Cattin,Olivier Dupré,Brahim Aïssa,Jan Haschke,Christophe Ballif,Mathieu Boccard###
(301733, 301733)
 Furthermore, we show that a relative gain of 0.4 to 0.8 percent inharvesting efficiency is possible by adding a certain content of carbon in thefront (n) layer, compared with carbon-free cells optimized for ST<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 1000, 'W', 6],[58.0, 0.4, 'to', 0],[57.0, 0.8, 'percent', 0]

C
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(301812, 301812)
 The energetic landscape at the interface between electron donating andaccepting molecular materials favors efficient conversion of intermolecularcharge-transfer states (CT<missing VAR>S) into free charge carriers in high-performanceorganic solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 70, '%', 3]

S
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(301814, 301814)
 The energetic landscape at the interface between electron donating andaccepting molecular materials favors efficient conversion of intermolecularcharge-transfer states (CT<missing VAR>S) into free charge carriers in high-performanceorganic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 70, '%', 3]

C
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(301884, 301884)
 Weexperimentally determine the CT<missing VAR>S binding energy of a series of model, smallmolecule donor-acceptor blends, where the used acceptors (B2PYMPM, B3PYMPM andB4PYMPM) differ only in the nitrogen position of their lateral pyridine rings.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 70, '%', 1]

S
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(301886, 301886)
 Weexperimentally determine the CT<missing VAR>S binding energy of a series of model, smallmolecule donor-acceptor blends, where the used acceptors (B2PYMPM, B3PYMPM andB4PYMPM) differ only in the nitrogen position of their lateral pyridine rings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 70, '%', 1]

B2PY
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(301924, 301927)
 Weexperimentally determine the CT<missing VAR>S binding energy of a series of model, smallmolecule donor-acceptor blends, where the used acceptors (B2PYMPM, B3PYMPM andB4PYMPM) differ only in the nitrogen position of their lateral pyridine rings.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 70, '%', 1]

B3PY
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(301933, 301936)
 Weexperimentally determine the CT<missing VAR>S binding energy of a series of model, smallmolecule donor-acceptor blends, where the used acceptors (B2PYMPM, B3PYMPM andB4PYMPM) differ only in the nitrogen position of their lateral pyridine rings.
Featurization terminated normally.
0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 70, '%', 1]

B4PY
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(301944, 301947)
 Weexperimentally determine the CT<missing VAR>S binding energy of a series of model, smallmolecule donor-acceptor blends, where the used acceptors (B2PYMPM, B3PYMPM andB4PYMPM) differ only in the nitrogen position of their lateral pyridine rings.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 70, '%', 1]

B4PY
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(302004, 302007)
We find that the formation of an ordered, face-on molecular packing in B4PYMPMis beneficial to efficient, field-independent charge separation, leading tofill factors over 70% in photovoltaic devices.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 70, '%', 0]

B2PY
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(302091, 302094)
 This is rationalized by acomprehensive computational protocol showing that, compared to the moreamorphous and isotropically oriented B2PYMPM, the higher order of the B4PYMPMmolecules provides more delocalized CT<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 70, '%', 1]

B4PY
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(302110, 302113)
 This is rationalized by acomprehensive computational protocol showing that, compared to the moreamorphous and isotropically oriented B2PYMPM, the higher order of the B4PYMPMmolecules provides more delocalized CT<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 70, '%', 1]

C
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(302127, 302127)
 This is rationalized by acomprehensive computational protocol showing that, compared to the moreamorphous and isotropically oriented B2PYMPM, the higher order of the B4PYMPMmolecules provides more delocalized CT<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 70, '%', 1]

S
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(302129, 302129)
 This is rationalized by acomprehensive computational protocol showing that, compared to the moreamorphous and isotropically oriented B2PYMPM, the higher order of the B4PYMPMmolecules provides more delocalized CT<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 70, '%', 1]

C
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(302181, 302181)
 Furthermore, we find no correlationbetween the quantum efficiency of radiative free charge carrier recombinationand the bound or unbound nature of the CT<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 70, '%', 2]

S
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(302183, 302183)
 Furthermore, we find no correlationbetween the quantum efficiency of radiative free charge carrier recombinationand the bound or unbound nature of the CT<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 70, '%', 2]

C
###Structural order promotes efficient separation of delocalized charges at molecular heterojunctions|Xiangkun Jia,Lorenzo Soprani,Giacomo Londi,Seyed Mehrdad Hosseini,Felix Talnack,Stefan Mannsfeld,Safa Shoaee,Dieter Neher,Sebastian Reineke,Luca Muccioli,Gabriele D'Avino,Koen Vandewal,David Beljonne,Donato Spoltore X. Jia,S. Reineke,L. Soprani,L. Muccioli,G. Londi,D. Beljonne,S. M. Hosseini,S. Shoaee,D. Neher,F. Talnack,S. Mannsfeld,G. D'Avino,K. Vandewal,D. Spoltore###
(302238, 302238)
 This work highlights the importanceof structural ordering at donor-acceptor interfaces for efficient free carriergeneration and shows that more ordering and less bound CT<missing VAR> states do notpreclude efficient radiative recombination.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 70, '%', 3]

C
###Broadband enhancement of light harvesting in luminescent solar concentrator|Yun-Feng Xiao,Chang-Ling Zou,Yi-Wen Hu,Yan Li,Lixin Xiao,Fang-Wen Sun,Qihuang Gong###
(302293, 302293)
 Luminescent solar concentrator (L<missing VAR>SC) can absorb large-area incident sunlight,then emit luminescence with high quantum efficiency, which finally be collectedby a small photovoltaic (PV) system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 80, '%', 5]

(PV)
###Broadband enhancement of light harvesting in luminescent solar concentrator|Yun-Feng Xiao,Chang-Ling Zou,Yi-Wen Hu,Yan Li,Lixin Xiao,Fang-Wen Sun,Qihuang Gong###
(302342, 302345)
 Luminescent solar concentrator (L<missing VAR>SC) can absorb large-area incident sunlight,then emit luminescence with high quantum efficiency, which finally be collectedby a small photovoltaic (PV) system.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 80, '%', 5]

PV
###Broadband enhancement of light harvesting in luminescent solar concentrator|Yun-Feng Xiao,Chang-Ling Zou,Yi-Wen Hu,Yan Li,Lixin Xiao,Fang-Wen Sun,Qihuang Gong###
(302362, 302363)
 The light-harvesting area of the PV systemis much smaller than that of the L<missing VAR>SC system, potentially improving theefficiency and reducing the cost of solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 80, '%', 4]

SC
###Broadband enhancement of light harvesting in luminescent solar concentrator|Yun-Feng Xiao,Chang-Ling Zou,Yi-Wen Hu,Yan Li,Lixin Xiao,Fang-Wen Sun,Qihuang Gong###
(302383, 302384)
 The light-harvesting area of the PV systemis much smaller than that of the L<missing VAR>SC system, potentially improving theefficiency and reducing the cost of solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 80, '%', 4]

SCs
###Broadband enhancement of light harvesting in luminescent solar concentrator|Yun-Feng Xiao,Chang-Ling Zou,Yi-Wen Hu,Yan Li,Lixin Xiao,Fang-Wen Sun,Qihuang Gong###
(302452, 302453)
 Here, based on Fermi-goldenrule, we present a theoretical description of the luminescent process innanoscale L<missing VAR>SCs where the conventional ray-optics model is no longer applicable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 80, '%', 3]

As
###Broadband enhancement of light harvesting in luminescent solar concentrator|Yun-Feng Xiao,Chang-Ling Zou,Yi-Wen Hu,Yan Li,Lixin Xiao,Fang-Wen Sun,Qihuang Gong###
(302477, 302477)
As an example calculated with this new model, we demonstrate that a slotwaveguide consisting of a nanometer-sized low-index slot region sandwiched bytwo high-index regions provides a broadband enhancement of light harvesting bythe luminescent centers in the slot region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 80, '%', 2]

SC
###Broadband enhancement of light harvesting in luminescent solar concentrator|Yun-Feng Xiao,Chang-Ling Zou,Yi-Wen Hu,Yan Li,Lixin Xiao,Fang-Wen Sun,Qihuang Gong###
(302720, 302721)
 This L<missing VAR>SC is potential to construct a tandem structure whichcan absorb nearly full-spectrum solar photons, and also may be of specialinterest for building integrated nano-PV applications.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 80, '%', 1]

PV
###Broadband enhancement of light harvesting in luminescent solar concentrator|Yun-Feng Xiao,Chang-Ling Zou,Yi-Wen Hu,Yan Li,Lixin Xiao,Fang-Wen Sun,Qihuang Gong###
(302778, 302779)
 This L<missing VAR>SC is potential to construct a tandem structure whichcan absorb nearly full-spectrum solar photons, and also may be of specialinterest for building integrated nano-PV applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 80, '%', 1]

Ds
###Highly efficient visible colloidal lead-halide perovskite nanocrystal light-emitting diodes|Fei Yan,Jun Xing,Guichuan Xing,Lina Quan,Swee Tiam Tan,Jiaxin Zhao,Rui Su,Lulu Zhang,Shi Chen,Yawen Zhao,Alfred Huan,Edward H. Sargent,Qihua Xiong,Hilmi Volkan Demir###
(302877, 302877)
 Following the footsteps of solar cells, the field ofperovskite light-emitting diodes (PeLEDs) has been growing rapidly.
EXCEPTION 3: IndexError for Ds
Ds
[141.0, 71, '%', 2],[300.0, 12.9, '%', 4],[323.0, 30.3, 'lm', 4]

OP
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303338, 303339)
 A detailed investigation of the functionality of inverted organicphotovoltaics (OPVs) using bare Ag contacts as top electrode is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, -2, ',', 2],[150.0, 3.5, '%', 2],[179.0, 4, 'days', 2],[251.0, 85, '%', 4],[369.0, 6.5, '%', 5]

Ag
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303347, 303347)
 A detailed investigation of the functionality of inverted organicphotovoltaics (OPVs) using bare Ag contacts as top electrode is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, -2, ',', 2],[142.0, 3.5, '%', 2],[171.0, 4, 'days', 2],[243.0, 85, '%', 4],[361.0, 6.5, '%', 5]

OP
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303367, 303368)
 Theinverted OPVs without hole transporting layer (HTL) exhibit a significant gainin hole carrier selectivity and power conversion efficiency (PCE) afterexposure in ambient conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, -2, ',', 1],[121.0, 3.5, '%', 1],[150.0, 4, 'days', 1],[222.0, 85, '%', 3],[340.0, 6.5, '%', 4]

H
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303380, 303380)
 Theinverted OPVs without hole transporting layer (HTL) exhibit a significant gainin hole carrier selectivity and power conversion efficiency (PCE) afterexposure in ambient conditions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, -2, ',', 1],[109.0, 3.5, '%', 1],[138.0, 4, 'days', 1],[210.0, 85, '%', 3],[328.0, 6.5, '%', 4]

PC
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303411, 303412)
 Theinverted OPVs without hole transporting layer (HTL) exhibit a significant gainin hole carrier selectivity and power conversion efficiency (PCE) afterexposure in ambient conditions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, -2, ',', 1],[77.0, 3.5, '%', 1],[106.0, 4, 'days', 1],[178.0, 85, '%', 3],[296.0, 6.5, '%', 4]

OP
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303430, 303431)
 Inverted OPVs comprised ofIT<missing VAR>O/ZnO/poly(3-hexylthiophene-2,5-diyl)phenyl-C61-butyric acid methyl ester(P3HT<missing VAR>PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if thedevices are exposed in air for over 4 days.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, -2, ',', 0],[58.0, 3.5, '%', 0],[87.0, 4, 'days', 0],[159.0, 85, '%', 2],[277.0, 6.5, '%', 3]

I
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303439, 303439)
 Inverted OPVs comprised ofIT<missing VAR>O/ZnO/poly(3-hexylthiophene-2,5-diyl)phenyl-C61-butyric acid methyl ester(P3HT<missing VAR>PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if thedevices are exposed in air for over 4 days.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, -2, ',', 0],[50.0, 3.5, '%', 0],[79.0, 4, 'days', 0],[151.0, 85, '%', 2],[269.0, 6.5, '%', 3]

O/ZnO
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303441, 303444)
 Inverted OPVs comprised ofIT<missing VAR>O/ZnO/poly(3-hexylthiophene-2,5-diyl)phenyl-C61-butyric acid methyl ester(P3HT<missing VAR>PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if thedevices are exposed in air for over 4 days.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[7.0, -2, ',', 0],[45.0, 3.5, '%', 0],[74.0, 4, 'days', 0],[146.0, 85, '%', 2],[264.0, 6.5, '%', 3]

C61
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303460, 303461)
 Inverted OPVs comprised ofIT<missing VAR>O/ZnO/poly(3-hexylthiophene-2,5-diyl)phenyl-C61-butyric acid methyl ester(P3HT<missing VAR>PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if thedevices are exposed in air for over 4 days.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, -2, ',', 0],[28.0, 3.5, '%', 0],[57.0, 4, 'days', 0],[129.0, 85, '%', 2],[247.0, 6.5, '%', 3]

P3H
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303473, 303475)
 Inverted OPVs comprised ofIT<missing VAR>O/ZnO/poly(3-hexylthiophene-2,5-diyl)phenyl-C61-butyric acid methyl ester(P3HT<missing VAR>PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if thedevices are exposed in air for over 4 days.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, -2, ',', 0],[14.0, 3.5, '%', 0],[43.0, 4, 'days', 0],[115.0, 85, '%', 2],[233.0, 6.5, '%', 3]

PCB
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303477, 303479)
 Inverted OPVs comprised ofIT<missing VAR>O/ZnO/poly(3-hexylthiophene-2,5-diyl)phenyl-C61-butyric acid methyl ester(P3HT<missing VAR>PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if thedevices are exposed in air for over 4 days.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, -2, ',', 0],[10.0, 3.5, '%', 0],[39.0, 4, 'days', 0],[111.0, 85, '%', 2],[229.0, 6.5, '%', 3]

Ag
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303483, 303483)
 Inverted OPVs comprised ofIT<missing VAR>O/ZnO/poly(3-hexylthiophene-2,5-diyl)phenyl-C61-butyric acid methyl ester(P3HT<missing VAR>PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if thedevices are exposed in air for over 4 days.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, -2, ',', 0],[6.0, 3.5, '%', 0],[35.0, 4, 'days', 0],[107.0, 85, '%', 2],[225.0, 6.5, '%', 3]

As
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303521, 303521)
 As concluded through a series ofmeasurements, the oxygen presence is essential to obtain fully operationalsolar cell devices without HTL.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, -2, ',', 1],[32.0, 3.5, '%', 1],[3.0, 4, 'days', 1],[69.0, 85, '%', 1],[187.0, 6.5, '%', 2]

H
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303564, 303564)
 As concluded through a series ofmeasurements, the oxygen presence is essential to obtain fully operationalsolar cell devices without HTL.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, -2, ',', 1],[75.0, 3.5, '%', 1],[46.0, 4, 'days', 1],[26.0, 85, '%', 1],[144.0, 6.5, '%', 2]

H
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303589, 303589)
 Moreover, accelerated stability tests underdamp heat conditions (R<missing VAR>H85% and T65oC) performed to non-encapsulated OPVsdemonstrate that HTL-free inverted OPVs exhibit comparable stability to thereference inverted OPVs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, -2, ',', 2],[100.0, 3.5, '%', 2],[71.0, 4, 'days', 2],[1.0, 85, '%', 0],[119.0, 6.5, '%', 1]

C
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303598, 303598)
 Moreover, accelerated stability tests underdamp heat conditions (R<missing VAR>H85% and T65oC) performed to non-encapsulated OPVsdemonstrate that HTL-free inverted OPVs exhibit comparable stability to thereference inverted OPVs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, -2, ',', 2],[109.0, 3.5, '%', 2],[80.0, 4, 'days', 2],[8.0, 85, '%', 0],[110.0, 6.5, '%', 1]

OP
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303609, 303610)
 Moreover, accelerated stability tests underdamp heat conditions (R<missing VAR>H85% and T65oC) performed to non-encapsulated OPVsdemonstrate that HTL-free inverted OPVs exhibit comparable stability to thereference inverted OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, -2, ',', 2],[120.0, 3.5, '%', 2],[91.0, 4, 'days', 2],[19.0, 85, '%', 0],[98.0, 6.5, '%', 1]

H
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303618, 303618)
 Moreover, accelerated stability tests underdamp heat conditions (R<missing VAR>H85% and T65oC) performed to non-encapsulated OPVsdemonstrate that HTL-free inverted OPVs exhibit comparable stability to thereference inverted OPVs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, -2, ',', 2],[129.0, 3.5, '%', 2],[100.0, 4, 'days', 2],[28.0, 85, '%', 0],[90.0, 6.5, '%', 1]

OP
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303626, 303627)
 Moreover, accelerated stability tests underdamp heat conditions (R<missing VAR>H85% and T65oC) performed to non-encapsulated OPVsdemonstrate that HTL-free inverted OPVs exhibit comparable stability to thereference inverted OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, -2, ',', 2],[137.0, 3.5, '%', 2],[108.0, 4, 'days', 2],[36.0, 85, '%', 0],[81.0, 6.5, '%', 1]

OP
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303645, 303646)
 Moreover, accelerated stability tests underdamp heat conditions (R<missing VAR>H85% and T65oC) performed to non-encapsulated OPVsdemonstrate that HTL-free inverted OPVs exhibit comparable stability to thereference inverted OPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, -2, ',', 2],[156.0, 3.5, '%', 2],[127.0, 4, 'days', 2],[55.0, 85, '%', 0],[62.0, 6.5, '%', 1]

Ag
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303663, 303663)
 Importantly, it is shown that bare Ag top electrodescan be efficiently used in inverted OPVs using various high performancepolymerfullerene bulk heterojunction material systems demonstrating 6.5% powerconversion efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, -2, ',', 3],[174.0, 3.5, '%', 3],[145.0, 4, 'days', 3],[73.0, 85, '%', 1],[45.0, 6.5, '%', 0]

OP
###High Performance Inverted Organic Photovoltaics Without Hole Selective Contact|Achilleas Savva,Ignasi Burgues-Ceballos,Giannis Papazoglou,Stelios A. Choulis###
(303682, 303683)
 Importantly, it is shown that bare Ag top electrodescan be efficiently used in inverted OPVs using various high performancepolymerfullerene bulk heterojunction material systems demonstrating 6.5% powerconversion efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, -2, ',', 3],[193.0, 3.5, '%', 3],[164.0, 4, 'days', 3],[92.0, 85, '%', 1],[25.0, 6.5, '%', 0]

SiH
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303747, 303748)
Effect of surface recombination on electroluminescence and photoconversion in a-SiH/c<missing VAR>-Si heterojunction solar cells.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 93, 'large', 3],[120.0, 239, ',', 3],[161.0, 298, 'K', 3],[294.0, 20.5, '%', 6],[299.0, 18, '%', 6],[381.0, 2.1, '%', 8],[499.0, 223, 'K', 10]

Si
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303752, 303752)
Effect of surface recombination on electroluminescence and photoconversion in a-SiH/c<missing VAR>-Si heterojunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 93, 'large', 3],[116.0, 239, ',', 3],[157.0, 298, 'K', 3],[290.0, 20.5, '%', 6],[295.0, 18, '%', 6],[377.0, 2.1, '%', 8],[495.0, 223, 'K', 10]

(SCs)
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303792, 303795)
 Surface recombination affects both light-to-electricity andelectricity-to-light conversion in solar cells (SCs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 93, 'large', 2],[73.0, 239, ',', 2],[114.0, 298, 'K', 2],[247.0, 20.5, '%', 5],[252.0, 18, '%', 5],[334.0, 2.1, '%', 7],[452.0, 223, 'K', 9]

SC
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303826, 303827)
 Therefore, quantitativeanalysis and reduction of surface recombination is an important direction in SCresearch.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 93, 'large', 1],[41.0, 239, ',', 1],[82.0, 298, 'K', 1],[215.0, 20.5, '%', 4],[220.0, 18, '%', 4],[302.0, 2.1, '%', 6],[420.0, 223, 'K', 8]

In
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303833, 303833)
 In this work, electroluminescence (EL) intensity and photoconversionefficiency of a set of 93 large-area (239,cm2) a-SiH/c<missing VAR>-Si heterojunctionSCs (HJ<missing VAR>SCs) are measured under AM<missing VAR>1.5 conditions at 298 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 93, 'large', 0],[35.0, 239, ',', 0],[76.0, 298, 'K', 0],[209.0, 20.5, '%', 3],[214.0, 18, '%', 3],[296.0, 2.1, '%', 5],[414.0, 223, 'K', 7]

SiH
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303876, 303877)
 In this work, electroluminescence (EL) intensity and photoconversionefficiency of a set of 93 large-area (239,cm2) a-SiH/c<missing VAR>-Si heterojunctionSCs (HJ<missing VAR>SCs) are measured under AM<missing VAR>1.5 conditions at 298 K.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 93, 'large', 0],[8.0, 239, ',', 0],[32.0, 298, 'K', 0],[165.0, 20.5, '%', 3],[170.0, 18, '%', 3],[252.0, 2.1, '%', 5],[370.0, 223, 'K', 7]

Si
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303881, 303881)
 In this work, electroluminescence (EL) intensity and photoconversionefficiency of a set of 93 large-area (239,cm2) a-SiH/c<missing VAR>-Si heterojunctionSCs (HJ<missing VAR>SCs) are measured under AM<missing VAR>1.5 conditions at 298 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 93, 'large', 0],[13.0, 239, ',', 0],[28.0, 298, 'K', 0],[161.0, 20.5, '%', 3],[166.0, 18, '%', 3],[248.0, 2.1, '%', 5],[366.0, 223, 'K', 7]

SCs
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303886, 303887)
 In this work, electroluminescence (EL) intensity and photoconversionefficiency of a set of 93 large-area (239,cm2) a-SiH/c<missing VAR>-Si heterojunctionSCs (HJ<missing VAR>SCs) are measured under AM<missing VAR>1.5 conditions at 298 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 93, 'large', 0],[18.0, 239, ',', 0],[22.0, 298, 'K', 0],[155.0, 20.5, '%', 3],[160.0, 18, '%', 3],[242.0, 2.1, '%', 5],[360.0, 223, 'K', 7]

H
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303890, 303890)
 In this work, electroluminescence (EL) intensity and photoconversionefficiency of a set of 93 large-area (239,cm2) a-SiH/c<missing VAR>-Si heterojunctionSCs (HJ<missing VAR>SCs) are measured under AM<missing VAR>1.5 conditions at 298 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 93, 'large', 0],[22.0, 239, ',', 0],[19.0, 298, 'K', 0],[152.0, 20.5, '%', 3],[157.0, 18, '%', 3],[239.0, 2.1, '%', 5],[357.0, 223, 'K', 7]

Cs
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303893, 303893)
 In this work, electroluminescence (EL) intensity and photoconversionefficiency of a set of 93 large-area (239,cm2) a-SiH/c<missing VAR>-Si heterojunctionSCs (HJ<missing VAR>SCs) are measured under AM<missing VAR>1.5 conditions at 298 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 93, 'large', 0],[25.0, 239, ',', 0],[16.0, 298, 'K', 0],[149.0, 20.5, '%', 3],[154.0, 18, '%', 3],[236.0, 2.1, '%', 5],[354.0, 223, 'K', 7]

H
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303914, 303914)
 The HJ<missing VAR>SC samplesdiffered only in surface recombination velocity, S, but otherwise wereidentical.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 93, 'large', 1],[46.0, 239, ',', 1],[5.0, 298, 'K', 1],[128.0, 20.5, '%', 2],[133.0, 18, '%', 2],[215.0, 2.1, '%', 4],[333.0, 223, 'K', 6]

SC
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303916, 303917)
 The HJ<missing VAR>SC samplesdiffered only in surface recombination velocity, S, but otherwise wereidentical.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 93, 'large', 1],[48.0, 239, ',', 1],[7.0, 298, 'K', 1],[125.0, 20.5, '%', 2],[130.0, 18, '%', 2],[212.0, 2.1, '%', 4],[330.0, 223, 'K', 6]

S
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303935, 303935)
 The HJ<missing VAR>SC samplesdiffered only in surface recombination velocity, S, but otherwise wereidentical.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 93, 'large', 1],[67.0, 239, ',', 1],[26.0, 298, 'K', 1],[107.0, 20.5, '%', 2],[112.0, 18, '%', 2],[194.0, 2.1, '%', 4],[312.0, 223, 'K', 6]

S
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(303952, 303952)
 Variation in S was due to the variation of the chemical conditionsunder which the samples were treated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 93, 'large', 2],[84.0, 239, ',', 2],[43.0, 298, 'K', 2],[90.0, 20.5, '%', 1],[95.0, 18, '%', 1],[177.0, 2.1, '%', 3],[295.0, 223, 'K', 5]

S
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(304009, 304009)
 It is established that EL quantumefficiency, is affected by S much more strongly than photoconversionefficiency, eta namely, the reduction of the latter from 20.5% to 18% dueto an increase of S is accompanied by a decrease of the former by more thanan order of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 93, 'large', 3],[141.0, 239, ',', 3],[100.0, 298, 'K', 3],[33.0, 20.5, '%', 0],[38.0, 18, '%', 0],[120.0, 2.1, '%', 2],[238.0, 223, 'K', 4]

S
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(304061, 304061)
 It is established that EL quantumefficiency, is affected by S much more strongly than photoconversionefficiency, eta namely, the reduction of the latter from 20.5% to 18% dueto an increase of S is accompanied by a decrease of the former by more thanan order of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 93, 'large', 3],[193.0, 239, ',', 3],[152.0, 298, 'K', 3],[19.0, 20.5, '%', 0],[14.0, 18, '%', 0],[68.0, 2.1, '%', 2],[186.0, 223, 'K', 4]

In
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(304095, 304095)
 In HJ<missing VAR>SCs with well passivated surfaces, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 93, 'large', 4],[227.0, 239, ',', 4],[186.0, 298, 'K', 4],[53.0, 20.5, '%', 1],[48.0, 18, '%', 1],[34.0, 2.1, '%', 1],[152.0, 223, 'K', 3]

H
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(304097, 304097)
 In HJ<missing VAR>SCs with well passivated surfaces, i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 93, 'large', 4],[229.0, 239, ',', 4],[188.0, 298, 'K', 4],[55.0, 20.5, '%', 1],[50.0, 18, '%', 1],[32.0, 2.1, '%', 1],[150.0, 223, 'K', 3]

SCs
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(304099, 304100)
 In HJ<missing VAR>SCs with well passivated surfaces, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 93, 'large', 4],[231.0, 239, ',', 4],[190.0, 298, 'K', 4],[57.0, 20.5, '%', 1],[52.0, 18, '%', 1],[29.0, 2.1, '%', 1],[147.0, 223, 'K', 3]

S
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(304118, 304118)
 low S, ELefficiency reached 2.1%, which is notably higher than the known values insilicon homojunction diodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 93, 'large', 5],[250.0, 239, ',', 5],[209.0, 298, 'K', 5],[76.0, 20.5, '%', 2],[71.0, 18, '%', 2],[11.0, 2.1, '%', 0],[129.0, 223, 'K', 2]

I
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(304177, 304177)
 For temperature-dependent measurements of EL anddark I-V curves, one of the samples was cut into small-area (1 cm2) pieces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 93, 'large', 6],[309.0, 239, ',', 6],[268.0, 298, 'K', 6],[135.0, 20.5, '%', 3],[130.0, 18, '%', 3],[48.0, 2.1, '%', 1],[70.0, 223, 'K', 1]

V
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(304179, 304179)
 For temperature-dependent measurements of EL anddark I-V curves, one of the samples was cut into small-area (1 cm2) pieces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 93, 'large', 6],[311.0, 239, ',', 6],[270.0, 298, 'K', 6],[137.0, 20.5, '%', 3],[132.0, 18, '%', 3],[50.0, 2.1, '%', 1],[68.0, 223, 'K', 1]

At
###Effect of surface recombination on electroluminescence and photoconversion in a-Si:H/c-Si heterojunction solar cells|A. V. Sachenko,A. V. Bobyl,V. N. Verbitskiy,V. M. Vlasyuk,D. M. Zhigunov,V. P. Kostylyov,I. O. Sokolovskyi,E. I. Terukov,P. A. Forsh,M. Evstigneev###
(304250, 304250)
 At low temperatures, the current at weak bias is shown to bedue to tunneling mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 93, 'large', 8],[382.0, 239, ',', 8],[341.0, 298, 'K', 8],[208.0, 20.5, '%', 5],[203.0, 18, '%', 5],[121.0, 2.1, '%', 3],[3.0, 223, 'K', 1]

Si
###Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila###
(304941, 304941)
 The directionalscattering by semiconductoroxide (coreshell) spherical particles (containingSi, InP, TiO2, SiO2, or ZrO2) with a total radius varying from 0.1 to4.0 mum<missing VAR> and in an insulating medium at low volume fraction is investigatedusing Lorenz-Mie theory and multiscale modelling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.1, 'to', 0],[136.0, 83.7, '%', 2],[141.0, 63.9, '%', 2],[181.0, 1, '%', 2],[254.0, 80.2, '%', 3],[260.0, 60.7, '%', 3],[338.0, 90, '%', 4]

InP
###Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila###
(304944, 304945)
 The directionalscattering by semiconductoroxide (coreshell) spherical particles (containingSi, InP, TiO2, SiO2, or ZrO2) with a total radius varying from 0.1 to4.0 mum<missing VAR> and in an insulating medium at low volume fraction is investigatedusing Lorenz-Mie theory and multiscale modelling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.1, 'to', 0],[132.0, 83.7, '%', 2],[137.0, 63.9, '%', 2],[177.0, 1, '%', 2],[250.0, 80.2, '%', 3],[256.0, 60.7, '%', 3],[334.0, 90, '%', 4]

TiO2
###Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila###
(304948, 304950)
 The directionalscattering by semiconductoroxide (coreshell) spherical particles (containingSi, InP, TiO2, SiO2, or ZrO2) with a total radius varying from 0.1 to4.0 mum<missing VAR> and in an insulating medium at low volume fraction is investigatedusing Lorenz-Mie theory and multiscale modelling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.1, 'to', 0],[127.0, 83.7, '%', 2],[132.0, 63.9, '%', 2],[172.0, 1, '%', 2],[245.0, 80.2, '%', 3],[251.0, 60.7, '%', 3],[329.0, 90, '%', 4]

SiO2
###Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila###
(304953, 304955)
 The directionalscattering by semiconductoroxide (coreshell) spherical particles (containingSi, InP, TiO2, SiO2, or ZrO2) with a total radius varying from 0.1 to4.0 mum<missing VAR> and in an insulating medium at low volume fraction is investigatedusing Lorenz-Mie theory and multiscale modelling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.1, 'to', 0],[122.0, 83.7, '%', 2],[127.0, 63.9, '%', 2],[167.0, 1, '%', 2],[240.0, 80.2, '%', 3],[246.0, 60.7, '%', 3],[324.0, 90, '%', 4]

O2
###Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila###
(304961, 304962)
 The directionalscattering by semiconductoroxide (coreshell) spherical particles (containingSi, InP, TiO2, SiO2, or ZrO2) with a total radius varying from 0.1 to4.0 mum<missing VAR> and in an insulating medium at low volume fraction is investigatedusing Lorenz-Mie theory and multiscale modelling.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.1, 'to', 0],[115.0, 83.7, '%', 2],[120.0, 63.9, '%', 2],[160.0, 1, '%', 2],[233.0, 80.2, '%', 3],[239.0, 60.7, '%', 3],[317.0, 90, '%', 4]

K
###Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila###
(305062, 305062)
 The optical response of eachlayers is calculated under irradiation by the sun or a blackbody emitter at1180 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.1, 'to', 1],[15.0, 83.7, '%', 1],[20.0, 63.9, '%', 1],[60.0, 1, '%', 1],[133.0, 80.2, '%', 2],[139.0, 60.7, '%', 2],[217.0, 90, '%', 3]

Si
###Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila###
(305133, 305133)
 Reflectance efficiency factors of up to 83.7% and 63.9% are achievedfor near-infrared solar and blackbody radiation in 200 mum<missing VAR> thick compactlayers with only 1% volume fraction of bare Si particles with a radius of 0.23mum<missing VAR> and 0.50 mum<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 0.1, 'to', 2],[56.0, 83.7, '%', 0],[51.0, 63.9, '%', 0],[11.0, 1, '%', 0],[62.0, 80.2, '%', 1],[68.0, 60.7, '%', 1],[146.0, 90, '%', 2]

InP
###Directing Near-Infrared Photon Transport with Core@Shell Particles|Kevin M. Conley,Vaibhav Thakore,Fahime Seyedheydari,Mikko Karttunen,Tapio Ala-Nissila###
(305183, 305184)
 The maximum solar and blackbodyefficiency factors of layers containing InP particles was slightly less (80.2%and 60.7% for bare particles with a radius of 0.25 mum<missing VAR> and 0.60 mum<missing VAR>,respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 0.1, 'to', 3],[106.0, 83.7, '%', 1],[101.0, 63.9, '%', 1],[61.0, 1, '%', 1],[11.0, 80.2, '%', 0],[17.0, 60.7, '%', 0],[95.0, 90, '%', 1]

In
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305425, 305425)
 In this work, using the DFT and TDDFT<missing VAR>, we have theoretically studied theelectronic and optical properties of the two recently synthesized coadsorbentsY1 and Y2, which were aimed to enhance the efficiency of the blackdye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305445, 305445)
 In this work, using the DFT and TDDFT<missing VAR>, we have theoretically studied theelectronic and optical properties of the two recently synthesized coadsorbentsY1 and Y2, which were aimed to enhance the efficiency of the blackdye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y1
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305481, 305482)
 In this work, using the DFT and TDDFT<missing VAR>, we have theoretically studied theelectronic and optical properties of the two recently synthesized coadsorbentsY1 and Y2, which were aimed to enhance the efficiency of the blackdye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y2
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305486, 305487)
 In this work, using the DFT and TDDFT<missing VAR>, we have theoretically studied theelectronic and optical properties of the two recently synthesized coadsorbentsY1 and Y2, which were aimed to enhance the efficiency of the blackdye-sensitized solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y1
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305631, 305632)
 The difference in excitation charge transferis utilized to explain the experimentally observed difference in J<missing VAR>sc forY1 and Y2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y2
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305636, 305637)
 The difference in excitation charge transferis utilized to explain the experimentally observed difference in J<missing VAR>sc forY1 and Y2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I2
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305648, 305649)
 Investigating the interactions of I2 molecules in the electrolytesolution with the coadsorbents showed that with Y1 the recombination loss wasweakened through decreasing the I2 concentration near the TiO2 surface,whereas with Y2 it was increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y1
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305674, 305675)
 Investigating the interactions of I2 molecules in the electrolytesolution with the coadsorbents showed that with Y1 the recombination loss wasweakened through decreasing the I2 concentration near the TiO2 surface,whereas with Y2 it was increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I2
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305694, 305695)
 Investigating the interactions of I2 molecules in the electrolytesolution with the coadsorbents showed that with Y1 the recombination loss wasweakened through decreasing the I2 concentration near the TiO2 surface,whereas with Y2 it was increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305703, 305705)
 Investigating the interactions of I2 molecules in the electrolytesolution with the coadsorbents showed that with Y1 the recombination loss wasweakened through decreasing the I2 concentration near the TiO2 surface,whereas with Y2 it was increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y2
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305715, 305716)
 Investigating the interactions of I2 molecules in the electrolytesolution with the coadsorbents showed that with Y1 the recombination loss wasweakened through decreasing the I2 concentration near the TiO2 surface,whereas with Y2 it was increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305725, 305725)
 As a result, the higher values of bothJ<missing VAR>sc and Voc with Y1 coadsorbent explains its experimentally observedhigher efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305748, 305748)
 As a result, the higher values of bothJ<missing VAR>sc and Voc with Y1 coadsorbent explains its experimentally observedhigher efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y1
###Efficiency enhancement of black dye-sensitized solar cell by newly synthesized D-$π$-A coadsorbents: A theoretical study|Yavar T. Azar,Mahmoud Payami###
(305753, 305754)
 As a result, the higher values of bothJ<missing VAR>sc and Voc with Y1 coadsorbent explains its experimentally observedhigher efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###How Much is the Efficiency of Solar Cells Enhanced by Quantum Coherence?|Sangchul Oh###
(305890, 305890)
 In contrast to the conventionalapproach that a quantum heat engine is in thermal equilibrium with both hot andcold reservoirs, we propose a new description that the quantum heat engine isin the cold reservoir and the thermal radiation from the hot reservoir isdescribed by the pumping term in the master equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SF)
###Enhancing silicon solar cells with singlet fission: the case for Foerster resonant energy transfer using a quantum dot intermediate|S. W. Tabernig,B. Daiber,T. Wang,B. Ehrler###
(306313, 306316)
 One way for solar cell efficiencies to overcome the Shockley-Queisser limitis downconversion of high-energy photons using singlet fission (SF) inpolyacenes like tetracene (Tc).
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 2, 'D', 4],[395.0, 1, 'nm', 5]

(Tc)
###Enhancing silicon solar cells with singlet fission: the case for Foerster resonant energy transfer using a quantum dot intermediate|S. W. Tabernig,B. Daiber,T. Wang,B. Ehrler###
(306327, 306329)
 One way for solar cell efficiencies to overcome the Shockley-Queisser limitis downconversion of high-energy photons using singlet fission (SF) inpolyacenes like tetracene (Tc).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 2, 'D', 4],[382.0, 1, 'nm', 5]

SF
###Enhancing silicon solar cells with singlet fission: the case for Foerster resonant energy transfer using a quantum dot intermediate|S. W. Tabernig,B. Daiber,T. Wang,B. Ehrler###
(306332, 306333)
 SF enables generation of multiple excitons fromthe high-energy photons which can be harvested in combination with Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 2, 'D', 3],[378.0, 1, 'nm', 4]

Si
###Enhancing silicon solar cells with singlet fission: the case for Foerster resonant energy transfer using a quantum dot intermediate|S. W. Tabernig,B. Daiber,T. Wang,B. Ehrler###
(306370, 306370)
 SF enables generation of multiple excitons fromthe high-energy photons which can be harvested in combination with Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 2, 'D', 3],[341.0, 1, 'nm', 4]

In
###Enhancing silicon solar cells with singlet fission: the case for Foerster resonant energy transfer using a quantum dot intermediate|S. W. Tabernig,B. Daiber,T. Wang,B. Ehrler###
(306373, 306373)
 In thiswork we investigate the use of lead sulfide quantum dots (PbS Q<missing VAR>Ds) with a bandgap close to Si as an interlayer that allows Foerster Resonant Energy Transfer(FRET) from Tc to Si, a process that would be spin-forbidden without theintermediate QD step.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2, 'D', 2],[338.0, 1, 'nm', 3]

PbS
###Enhancing silicon solar cells with singlet fission: the case for Foerster resonant energy transfer using a quantum dot intermediate|S. W. Tabernig,B. Daiber,T. Wang,B. Ehrler###
(306399, 306400)
 In thiswork we investigate the use of lead sulfide quantum dots (PbS Q<missing VAR>Ds) with a bandgap close to Si as an interlayer that allows Foerster Resonant Energy Transfer(FRET) from Tc to Si, a process that would be spin-forbidden without theintermediate QD step.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 2, 'D', 2],[311.0, 1, 'nm', 3]

Ds
###Enhancing silicon solar cells with singlet fission: the case for Foerster resonant energy transfer using a quantum dot intermediate|S. W. Tabernig,B. Daiber,T. Wang,B. Ehrler###
(306403, 306403)
 In thiswork we investigate the use of lead sulfide quantum dots (PbS Q<missing VAR>Ds) with a bandgap close to Si as an interlayer that allows Foerster Resonant Energy Transfer(FRET) from Tc to Si, a process that would be spin-forbidden without theintermediate QD step.
EXCEPTION 3: IndexError for Ds
Si
[211.0, 2, 'D', 2],[308.0, 1, 'nm', 3]

(SF)
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307270, 307273)
 Singlet fission (SF) is a potential pathway for significant enhancement ofefficiency in organic solar cells (OSC).
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSC)
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307302, 307306)
 Singlet fission (SF) is a potential pathway for significant enhancement ofefficiency in organic solar cells (OSC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307309, 307309)
 In this paper, we study singletfission in a pair of polyene molecules in two different stacking arrangementsemploying exact many-body wave packet dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307363, 307363)
 In the non-interacting model,the SF yield is absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307377, 307378)
 In the non-interacting model,the SF yield is absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PPP)
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307410, 307414)
 The individual molecules are treated within Hubbard andPariser-Parr-Pople (PPP) models and the interaction between them involvestransfer terms, intersite electron repulsions and site-charge--bond-chargerepulsion terms.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307549, 307549)
 Inunsubstituted Hubbard and PPP chains, 21A excited singlet state leads tosignificant SF yield while the 11B state gives negligible fission yield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PPP
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307558, 307560)
 Inunsubstituted Hubbard and PPP chains, 21A excited singlet state leads tosignificant SF yield while the 11B state gives negligible fission yield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307582, 307583)
 Inunsubstituted Hubbard and PPP chains, 21A excited singlet state leads tosignificant SF yield while the 11B state gives negligible fission yield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307593, 307593)
 Inunsubstituted Hubbard and PPP chains, 21A excited singlet state leads tosignificant SF yield while the 11B state gives negligible fission yield.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307658, 307659)
On substitution by donor-acceptor groups of moderate strength, the lowestexcited state will have sufficient 21A character and hence results insignificant SF yield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307696, 307697)
 Because of rapid internal conversion, the nature of thelowest excited singlet will determine the SF contribution to OSC efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSC
###Exact Wave Packet Dynamics of Singlet Fission in Unsubstituted and Substituted Polyene Chains within Long-Range Interacting Models|Suryoday Prodhan,S. Ramasesha###
(307703, 307705)
 Because of rapid internal conversion, the nature of thelowest excited singlet will determine the SF contribution to OSC efficiency.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(307783, 307783)
 As the race towards higher efficiency for inorganic/organic hybrid perovskitesolar cells (PSCs) is becoming highly competitive, a design scheme to maximizecarrier transport towards higher power efficiency has been urgently demanded.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSCs)
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(307810, 307814)
 As the race towards higher efficiency for inorganic/organic hybrid perovskitesolar cells (PSCs) is becoming highly competitive, a design scheme to maximizecarrier transport towards higher power efficiency has been urgently demanded.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(307881, 307883)
Here, we unravel a hidden role of A-site cation of PSCs in carrier transportwhich has been largely neglected, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(307936, 307936)
, tuning the Frohlich electron-phonon(e<missing VAR>-ph) coupling of longitudinal optical (L<missing VAR>O) phonon by A-site cations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(308007, 308007)
 The coordination to Ialleviates electron-phonon scattering by either decreasing the Born effectivecharge or absorbing the L<missing VAR>O motion of I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(308040, 308040)
 The coordination to Ialleviates electron-phonon scattering by either decreasing the Born effectivecharge or absorbing the L<missing VAR>O motion of I.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(308046, 308046)
 The coordination to Ialleviates electron-phonon scattering by either decreasing the Born effectivecharge or absorbing the L<missing VAR>O motion of I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(308090, 308090)
 This novel principle discloses lowerelectron-phonon coupling by several promising organic cations includinghydroxyl-ammonium cation (NH3OH+) and possibly Li+ solvatingmethylamine (Li+NH2CH3) than methyl-ammonium cation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(308098, 308098)
 This novel principle discloses lowerelectron-phonon coupling by several promising organic cations includinghydroxyl-ammonium cation (NH3OH+) and possibly Li+ solvatingmethylamine (Li+NH2CH3) than methyl-ammonium cation.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(308107, 308107)
 This novel principle discloses lowerelectron-phonon coupling by several promising organic cations includinghydroxyl-ammonium cation (NH3OH+) and possibly Li+ solvatingmethylamine (Li+NH2CH3) than methyl-ammonium cation.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H3
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(308113, 308114)
 This novel principle discloses lowerelectron-phonon coupling by several promising organic cations includinghydroxyl-ammonium cation (NH3OH+) and possibly Li+ solvatingmethylamine (Li+NH2CH3) than methyl-ammonium cation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###A New Perspective on the Role of A-site Cation in Perovskite Solar Cells|Chang Woo Myung,Jeonghun Yun,Geunsik Lee,Kwang S. Kim###
(308170, 308172)
 A new perspectiveon the role of A-site cation could help in improving power efficiency andaccelerating the application of PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308193, 308193)
Surface and Bulk Effects of K in Cu1-xKx<missing VAR>In1-yGay<missing VAR>Se2 Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 0.07, 'absorbers', 2],[272.0, 0.07, 'Cu', 4],[303.0, 0.3, 'and', 4],[370.0, 1, 'absorbers', 5],[577.0, 0.07, 'absorbers', 9],[672.0, 0.07, 'enhance', 10]

Cu1-xK
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308197, 308201)
Surface and Bulk Effects of K in Cu1-xKx<missing VAR>In1-yGay<missing VAR>Se2 Solar Cells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[181.0, 0.07, 'absorbers', 2],[264.0, 0.07, 'Cu', 4],[295.0, 0.3, 'and', 4],[362.0, 1, 'absorbers', 5],[569.0, 0.07, 'absorbers', 9],[664.0, 0.07, 'enhance', 10]

In1-yGa
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308203, 308207)
Surface and Bulk Effects of K in Cu1-xKx<missing VAR>In1-yGay<missing VAR>Se2 Solar Cells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[175.0, 0.07, 'absorbers', 2],[258.0, 0.07, 'Cu', 4],[289.0, 0.3, 'and', 4],[356.0, 1, 'absorbers', 5],[563.0, 0.07, 'absorbers', 9],[658.0, 0.07, 'enhance', 10]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308209, 308210)
Surface and Bulk Effects of K in Cu1-xKx<missing VAR>In1-yGay<missing VAR>Se2 Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.07, 'absorbers', 2],[255.0, 0.07, 'Cu', 4],[286.0, 0.3, 'and', 4],[353.0, 1, 'absorbers', 5],[560.0, 0.07, 'absorbers', 9],[655.0, 0.07, 'enhance', 10]

(PV)
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308227, 308230)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0.07, 'absorbers', 1],[235.0, 0.07, 'Cu', 3],[266.0, 0.3, 'and', 3],[333.0, 1, 'absorbers', 4],[540.0, 0.07, 'absorbers', 8],[635.0, 0.07, 'enhance', 9]

Cu1-x
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308247, 308250)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[132.0, 0.07, 'absorbers', 1],[215.0, 0.07, 'Cu', 3],[246.0, 0.3, 'and', 3],[313.0, 1, 'absorbers', 4],[520.0, 0.07, 'absorbers', 8],[615.0, 0.07, 'enhance', 9]

In1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308252, 308255)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[127.0, 0.07, 'absorbers', 1],[210.0, 0.07, 'Cu', 3],[241.0, 0.3, 'and', 3],[308.0, 1, 'absorbers', 4],[515.0, 0.07, 'absorbers', 8],[610.0, 0.07, 'enhance', 9]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308257, 308258)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 0.07, 'absorbers', 1],[207.0, 0.07, 'Cu', 3],[238.0, 0.3, 'and', 3],[305.0, 1, 'absorbers', 4],[512.0, 0.07, 'absorbers', 8],[607.0, 0.07, 'enhance', 9]

K
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308266, 308266)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.07, 'absorbers', 1],[199.0, 0.07, 'Cu', 3],[230.0, 0.3, 'and', 3],[297.0, 1, 'absorbers', 4],[504.0, 0.07, 'absorbers', 8],[599.0, 0.07, 'enhance', 9]

K
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308275, 308275)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.07, 'absorbers', 1],[190.0, 0.07, 'Cu', 3],[221.0, 0.3, 'and', 3],[288.0, 1, 'absorbers', 4],[495.0, 0.07, 'absorbers', 8],[590.0, 0.07, 'enhance', 9]

Cu
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308277, 308277)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.07, 'absorbers', 1],[188.0, 0.07, 'Cu', 3],[219.0, 0.3, 'and', 3],[286.0, 1, 'absorbers', 4],[493.0, 0.07, 'absorbers', 8],[588.0, 0.07, 'enhance', 9]

CuIn1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308300, 308304)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[78.0, 0.07, 'absorbers', 1],[161.0, 0.07, 'Cu', 3],[192.0, 0.3, 'and', 3],[259.0, 1, 'absorbers', 4],[466.0, 0.07, 'absorbers', 8],[561.0, 0.07, 'enhance', 9]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308306, 308307)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.07, 'absorbers', 1],[158.0, 0.07, 'Cu', 3],[189.0, 0.3, 'and', 3],[256.0, 1, 'absorbers', 4],[463.0, 0.07, 'absorbers', 8],[558.0, 0.07, 'enhance', 9]

KIn1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308314, 308318)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[64.0, 0.07, 'absorbers', 1],[147.0, 0.07, 'Cu', 3],[178.0, 0.3, 'and', 3],[245.0, 1, 'absorbers', 4],[452.0, 0.07, 'absorbers', 8],[547.0, 0.07, 'enhance', 9]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308320, 308321)
 Two strategies for enhancing photovoltaic (PV) performance in chalcopyritesolar cells were investigated Cu1-xKxIn1-yGaySe2 absorbers with low K content(K/(K+Cu), or x<missing VAR>  0.07) distributed throughout the bulk, and CuIn1-yGaySe2absorbers with KIn1-yGaySe2 grown on their surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.07, 'absorbers', 1],[144.0, 0.07, 'Cu', 3],[175.0, 0.3, 'and', 3],[242.0, 1, 'absorbers', 4],[449.0, 0.07, 'absorbers', 8],[544.0, 0.07, 'enhance', 9]

Ga
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308336, 308336)
 For the Ga-free case,increased temperature improved PV performance in the KInSe2 surface absorbers,but not in the bulk x<missing VAR>  0.07 absorbers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.07, 'absorbers', 0],[129.0, 0.07, 'Cu', 2],[160.0, 0.3, 'and', 2],[227.0, 1, 'absorbers', 3],[434.0, 0.07, 'absorbers', 7],[529.0, 0.07, 'enhance', 8]

PV
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308350, 308351)
 For the Ga-free case,increased temperature improved PV performance in the KInSe2 surface absorbers,but not in the bulk x<missing VAR>  0.07 absorbers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.07, 'absorbers', 0],[114.0, 0.07, 'Cu', 2],[145.0, 0.3, 'and', 2],[212.0, 1, 'absorbers', 3],[419.0, 0.07, 'absorbers', 7],[514.0, 0.07, 'enhance', 8]

KInSe2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308359, 308362)
 For the Ga-free case,increased temperature improved PV performance in the KInSe2 surface absorbers,but not in the bulk x<missing VAR>  0.07 absorbers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.07, 'absorbers', 0],[103.0, 0.07, 'Cu', 2],[134.0, 0.3, 'and', 2],[201.0, 1, 'absorbers', 3],[408.0, 0.07, 'absorbers', 7],[503.0, 0.07, 'enhance', 8]

KInSe2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308394, 308397)
 Growth temperature also increasedKInSe2 phase fraction, relative to Cu1-xKxInSe2 alloys-evidence that surfaceKInSe2 improved performance more than bulk KInSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.07, 'absorbers', 1],[68.0, 0.07, 'Cu', 1],[99.0, 0.3, 'and', 1],[166.0, 1, 'absorbers', 2],[373.0, 0.07, 'absorbers', 6],[468.0, 0.07, 'enhance', 7]

Cu1-x
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308408, 308411)
 Growth temperature also increasedKInSe2 phase fraction, relative to Cu1-xKxInSe2 alloys-evidence that surfaceKInSe2 improved performance more than bulk KInSe2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[26.0, 0.07, 'absorbers', 1],[54.0, 0.07, 'Cu', 1],[85.0, 0.3, 'and', 1],[152.0, 1, 'absorbers', 2],[359.0, 0.07, 'absorbers', 6],[454.0, 0.07, 'enhance', 7]

InSe2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308413, 308415)
 Growth temperature also increasedKInSe2 phase fraction, relative to Cu1-xKxInSe2 alloys-evidence that surfaceKInSe2 improved performance more than bulk KInSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.07, 'absorbers', 1],[50.0, 0.07, 'Cu', 1],[81.0, 0.3, 'and', 1],[148.0, 1, 'absorbers', 2],[355.0, 0.07, 'absorbers', 6],[450.0, 0.07, 'enhance', 7]

KInSe2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308426, 308429)
 Growth temperature also increasedKInSe2 phase fraction, relative to Cu1-xKxInSe2 alloys-evidence that surfaceKInSe2 improved performance more than bulk KInSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.07, 'absorbers', 1],[36.0, 0.07, 'Cu', 1],[67.0, 0.3, 'and', 1],[134.0, 1, 'absorbers', 2],[341.0, 0.07, 'absorbers', 6],[436.0, 0.07, 'enhance', 7]

KInSe2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308441, 308444)
 Growth temperature also increasedKInSe2 phase fraction, relative to Cu1-xKxInSe2 alloys-evidence that surfaceKInSe2 improved performance more than bulk KInSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.07, 'absorbers', 1],[21.0, 0.07, 'Cu', 1],[52.0, 0.3, 'and', 1],[119.0, 1, 'absorbers', 2],[326.0, 0.07, 'absorbers', 6],[421.0, 0.07, 'enhance', 7]

KIn1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308449, 308453)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[67.0, 0.07, 'absorbers', 2],[12.0, 0.07, 'Cu', 0],[43.0, 0.3, 'and', 0],[110.0, 1, 'absorbers', 1],[317.0, 0.07, 'absorbers', 5],[412.0, 0.07, 'enhance', 6]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308455, 308456)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0.07, 'absorbers', 2],[9.0, 0.07, 'Cu', 0],[40.0, 0.3, 'and', 0],[107.0, 1, 'absorbers', 1],[314.0, 0.07, 'absorbers', 5],[409.0, 0.07, 'enhance', 6]

In1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308470, 308473)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[88.0, 0.07, 'absorbers', 2],[5.0, 0.07, 'Cu', 0],[23.0, 0.3, 'and', 0],[90.0, 1, 'absorbers', 1],[297.0, 0.07, 'absorbers', 5],[392.0, 0.07, 'enhance', 6]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308475, 308476)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.07, 'absorbers', 2],[10.0, 0.07, 'Cu', 0],[20.0, 0.3, 'and', 0],[87.0, 1, 'absorbers', 1],[294.0, 0.07, 'absorbers', 5],[389.0, 0.07, 'enhance', 6]

Ga
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308485, 308485)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.07, 'absorbers', 2],[20.0, 0.07, 'Cu', 0],[11.0, 0.3, 'and', 0],[78.0, 1, 'absorbers', 1],[285.0, 0.07, 'absorbers', 5],[380.0, 0.07, 'enhance', 6]

In
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308487, 308487)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.07, 'absorbers', 2],[22.0, 0.07, 'Cu', 0],[9.0, 0.3, 'and', 0],[76.0, 1, 'absorbers', 1],[283.0, 0.07, 'absorbers', 5],[378.0, 0.07, 'enhance', 6]

(VOC)
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308516, 308520)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 0.07, 'absorbers', 2],[51.0, 0.07, 'Cu', 0],[20.0, 0.3, 'and', 0],[43.0, 1, 'absorbers', 1],[250.0, 0.07, 'absorbers', 5],[345.0, 0.07, 'enhance', 6]

(FF)
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308529, 308532)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.07, 'absorbers', 2],[64.0, 0.07, 'Cu', 0],[33.0, 0.3, 'and', 0],[31.0, 1, 'absorbers', 1],[238.0, 0.07, 'absorbers', 5],[333.0, 0.07, 'enhance', 6]

CuIn1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308540, 308544)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[158.0, 0.07, 'absorbers', 2],[75.0, 0.07, 'Cu', 0],[44.0, 0.3, 'and', 0],[19.0, 1, 'absorbers', 1],[226.0, 0.07, 'absorbers', 5],[321.0, 0.07, 'enhance', 6]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308546, 308547)
 Surface KIn1-yGaySe2 andbulk x<missing VAR>  0.07 Cu1-x<missing VAR>KxIn1-yGaySe2 films with Ga/(Ga+In), or y<missing VAR> of 0.3 and 0.5also had improved efficiency, open-circuit voltage (VOC), and fill factor (FF),relative to CuIn1-yGaySe2 baselines.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.07, 'absorbers', 2],[81.0, 0.07, 'Cu', 0],[50.0, 0.3, 'and', 0],[16.0, 1, 'absorbers', 1],[223.0, 0.07, 'absorbers', 5],[318.0, 0.07, 'enhance', 6]

K
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308574, 308574)
 On the other hand, y<missing VAR>  1 absorbers did notbenefit from K introduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0.07, 'absorbers', 3],[109.0, 0.07, 'Cu', 1],[78.0, 0.3, 'and', 1],[11.0, 1, 'absorbers', 0],[196.0, 0.07, 'absorbers', 4],[291.0, 0.07, 'enhance', 5]

Cu1-x
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308583, 308586)
 Similar to Cu1-xKxInSe2, the formation ofCu1-xKxGaSe2 alloys was favored at low temperatures and high substrate Nacontent, relative to the formation of mixed-phase CuGaSe2 + KGaSe2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[201.0, 0.07, 'absorbers', 4],[118.0, 0.07, 'Cu', 2],[87.0, 0.3, 'and', 2],[20.0, 1, 'absorbers', 1],[184.0, 0.07, 'absorbers', 3],[279.0, 0.07, 'enhance', 4]

InSe2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308588, 308590)
 Similar to Cu1-xKxInSe2, the formation ofCu1-xKxGaSe2 alloys was favored at low temperatures and high substrate Nacontent, relative to the formation of mixed-phase CuGaSe2 + KGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 0.07, 'absorbers', 4],[123.0, 0.07, 'Cu', 2],[92.0, 0.3, 'and', 2],[25.0, 1, 'absorbers', 1],[180.0, 0.07, 'absorbers', 3],[275.0, 0.07, 'enhance', 4]

Cu1-x
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308600, 308603)
 Similar to Cu1-xKxInSe2, the formation ofCu1-xKxGaSe2 alloys was favored at low temperatures and high substrate Nacontent, relative to the formation of mixed-phase CuGaSe2 + KGaSe2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[218.0, 0.07, 'absorbers', 4],[135.0, 0.07, 'Cu', 2],[104.0, 0.3, 'and', 2],[37.0, 1, 'absorbers', 1],[167.0, 0.07, 'absorbers', 3],[262.0, 0.07, 'enhance', 4]

GaSe2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308605, 308607)
 Similar to Cu1-xKxInSe2, the formation ofCu1-xKxGaSe2 alloys was favored at low temperatures and high substrate Nacontent, relative to the formation of mixed-phase CuGaSe2 + KGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 0.07, 'absorbers', 4],[140.0, 0.07, 'Cu', 2],[109.0, 0.3, 'and', 2],[42.0, 1, 'absorbers', 1],[163.0, 0.07, 'absorbers', 3],[258.0, 0.07, 'enhance', 4]

Na
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308627, 308627)
 Similar to Cu1-xKxInSe2, the formation ofCu1-xKxGaSe2 alloys was favored at low temperatures and high substrate Nacontent, relative to the formation of mixed-phase CuGaSe2 + KGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 0.07, 'absorbers', 4],[162.0, 0.07, 'Cu', 2],[131.0, 0.3, 'and', 2],[64.0, 1, 'absorbers', 1],[143.0, 0.07, 'absorbers', 3],[238.0, 0.07, 'enhance', 4]

CuGaSe2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308647, 308650)
 Similar to Cu1-xKxInSe2, the formation ofCu1-xKxGaSe2 alloys was favored at low temperatures and high substrate Nacontent, relative to the formation of mixed-phase CuGaSe2 + KGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 0.07, 'absorbers', 4],[182.0, 0.07, 'Cu', 2],[151.0, 0.3, 'and', 2],[84.0, 1, 'absorbers', 1],[120.0, 0.07, 'absorbers', 3],[215.0, 0.07, 'enhance', 4]

KGaSe2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308654, 308657)
 Similar to Cu1-xKxInSe2, the formation ofCu1-xKxGaSe2 alloys was favored at low temperatures and high substrate Nacontent, relative to the formation of mixed-phase CuGaSe2 + KGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 0.07, 'absorbers', 4],[189.0, 0.07, 'Cu', 2],[158.0, 0.3, 'and', 2],[91.0, 1, 'absorbers', 1],[113.0, 0.07, 'absorbers', 3],[208.0, 0.07, 'enhance', 4]

KIn1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308661, 308665)
KIn1-yGaySe2 alloys were grown for the first time, as evidenced by X<missing VAR>-raydiffraction and ultraviolet/visible spectroscopy.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[279.0, 0.07, 'absorbers', 5],[196.0, 0.07, 'Cu', 3],[165.0, 0.3, 'and', 3],[98.0, 1, 'absorbers', 2],[105.0, 0.07, 'absorbers', 2],[200.0, 0.07, 'enhance', 3]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308667, 308668)
KIn1-yGaySe2 alloys were grown for the first time, as evidenced by X<missing VAR>-raydiffraction and ultraviolet/visible spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 0.07, 'absorbers', 5],[202.0, 0.07, 'Cu', 3],[171.0, 0.3, 'and', 3],[104.0, 1, 'absorbers', 2],[102.0, 0.07, 'absorbers', 2],[197.0, 0.07, 'enhance', 3]

Ga
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308714, 308714)
 For all Ga/(Ga+In)compositions, the surface KIn1-yGaySe2 absorbers had superior PV performance inbuffered and buffer-free devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 0.07, 'absorbers', 6],[249.0, 0.07, 'Cu', 4],[218.0, 0.3, 'and', 4],[151.0, 1, 'absorbers', 3],[56.0, 0.07, 'absorbers', 1],[151.0, 0.07, 'enhance', 2]

In
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308716, 308716)
 For all Ga/(Ga+In)compositions, the surface KIn1-yGaySe2 absorbers had superior PV performance inbuffered and buffer-free devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 0.07, 'absorbers', 6],[251.0, 0.07, 'Cu', 4],[220.0, 0.3, 'and', 4],[153.0, 1, 'absorbers', 3],[54.0, 0.07, 'absorbers', 1],[149.0, 0.07, 'enhance', 2]

KIn1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308727, 308731)
 For all Ga/(Ga+In)compositions, the surface KIn1-yGaySe2 absorbers had superior PV performance inbuffered and buffer-free devices.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[345.0, 0.07, 'absorbers', 6],[262.0, 0.07, 'Cu', 4],[231.0, 0.3, 'and', 4],[164.0, 1, 'absorbers', 3],[39.0, 0.07, 'absorbers', 1],[134.0, 0.07, 'enhance', 2]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308733, 308734)
 For all Ga/(Ga+In)compositions, the surface KIn1-yGaySe2 absorbers had superior PV performance inbuffered and buffer-free devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 0.07, 'absorbers', 6],[268.0, 0.07, 'Cu', 4],[237.0, 0.3, 'and', 4],[170.0, 1, 'absorbers', 3],[36.0, 0.07, 'absorbers', 1],[131.0, 0.07, 'enhance', 2]

PV
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308742, 308743)
 For all Ga/(Ga+In)compositions, the surface KIn1-yGaySe2 absorbers had superior PV performance inbuffered and buffer-free devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 0.07, 'absorbers', 6],[277.0, 0.07, 'Cu', 4],[246.0, 0.3, 'and', 4],[179.0, 1, 'absorbers', 3],[27.0, 0.07, 'absorbers', 1],[122.0, 0.07, 'enhance', 2]

KIn1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308797, 308801)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[415.0, 0.07, 'absorbers', 8],[332.0, 0.07, 'Cu', 6],[301.0, 0.3, 'and', 6],[234.0, 1, 'absorbers', 5],[27.0, 0.07, 'absorbers', 1],[64.0, 0.07, 'enhance', 0]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308803, 308804)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[421.0, 0.07, 'absorbers', 8],[338.0, 0.07, 'Cu', 6],[307.0, 0.3, 'and', 6],[240.0, 1, 'absorbers', 5],[33.0, 0.07, 'absorbers', 1],[61.0, 0.07, 'enhance', 0]

CuIn1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308814, 308818)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[432.0, 0.07, 'absorbers', 8],[349.0, 0.07, 'Cu', 6],[318.0, 0.3, 'and', 6],[251.0, 1, 'absorbers', 5],[44.0, 0.07, 'absorbers', 1],[47.0, 0.07, 'enhance', 0]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308820, 308821)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 0.07, 'absorbers', 8],[355.0, 0.07, 'Cu', 6],[324.0, 0.3, 'and', 6],[257.0, 1, 'absorbers', 5],[50.0, 0.07, 'absorbers', 1],[44.0, 0.07, 'enhance', 0]

VOC
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308831, 308833)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 0.07, 'absorbers', 8],[366.0, 0.07, 'Cu', 6],[335.0, 0.3, 'and', 6],[268.0, 1, 'absorbers', 5],[61.0, 0.07, 'absorbers', 1],[32.0, 0.07, 'enhance', 0]

FF
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308838, 308839)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 0.07, 'absorbers', 8],[373.0, 0.07, 'Cu', 6],[342.0, 0.3, 'and', 6],[275.0, 1, 'absorbers', 5],[68.0, 0.07, 'absorbers', 1],[26.0, 0.07, 'enhance', 0]

Cu1-x
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308846, 308849)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[464.0, 0.07, 'absorbers', 8],[381.0, 0.07, 'Cu', 6],[350.0, 0.3, 'and', 6],[283.0, 1, 'absorbers', 5],[76.0, 0.07, 'absorbers', 1],[16.0, 0.07, 'enhance', 0]

In1-y
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308851, 308854)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[469.0, 0.07, 'absorbers', 8],[386.0, 0.07, 'Cu', 6],[355.0, 0.3, 'and', 6],[288.0, 1, 'absorbers', 5],[81.0, 0.07, 'absorbers', 1],[11.0, 0.07, 'enhance', 0]

Se2
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308856, 308857)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 0.07, 'absorbers', 8],[391.0, 0.07, 'Cu', 6],[360.0, 0.3, 'and', 6],[293.0, 1, 'absorbers', 5],[86.0, 0.07, 'absorbers', 1],[8.0, 0.07, 'enhance', 0]

VOC
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308871, 308873)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[489.0, 0.07, 'absorbers', 8],[406.0, 0.07, 'Cu', 6],[375.0, 0.3, 'and', 6],[308.0, 1, 'absorbers', 5],[101.0, 0.07, 'absorbers', 1],[6.0, 0.07, 'enhance', 0]

FF
###Surface and Bulk Effects of K in Cu$_{1-x}$K$_x$In$_{1-y}$Ga$_y$Se$_2$ Solar Cells|Christopher P. Muzzillo,Timothy J. Anderson###
(308878, 308879)
 The data demonstrate thatKIn1-yGaySe2 passivates the surface of CuIn1-yGaySe2 to increase efficiency,VOC, and FF, while bulk Cu1-xKxIn1-yGaySe2 absorbers with x<missing VAR>  0.07 enhanceefficiency, VOC, and FF by some other mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[496.0, 0.07, 'absorbers', 8],[413.0, 0.07, 'Cu', 6],[382.0, 0.3, 'and', 6],[315.0, 1, 'absorbers', 5],[108.0, 0.07, 'absorbers', 1],[13.0, 0.07, 'enhance', 0]

Ds
###Mixed Halide Perovskite Light Emitting Solar Cell|Dmitry Gets,Arthur Ishteev,Eduard Danilovskiy,Danila Saranin,Ross Haroldson,Sergey Makarov,Anvar Zakhidov###
(308951, 308951)
 Organic-inorganic halide perovskites recently have emerged as a promisingmaterial for highly effective light-emitting diodes (LEDs) and solar cells(SCs).
EXCEPTION 3: IndexError for Ds
(SCs)
[163.0, 2, 'V', 2],[200.0, 2, 'V', 2]

(OSCs)
###Non-equilibrium thermodynamics of charge separation in organic solar cells|Waldemar Kaiser,Veljko Jankovic,Nenad Vukmirovic,Alessio Gagliardi###
(309491, 309495)
 This work presents a novel theoretical description of the non-equilibriumthermodynamics of charge separation process in organic solar cells (OSCs).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###Non-equilibrium thermodynamics of charge separation in organic solar cells|Waldemar Kaiser,Veljko Jankovic,Nenad Vukmirovic,Alessio Gagliardi###
(309662, 309664)
 We observe significant deviations from equilibrium for delocalizedelectron-hole pairs at small energetic disorder, representing efficient OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-equilibrium thermodynamics of charge separation in organic solar cells|Waldemar Kaiser,Veljko Jankovic,Nenad Vukmirovic,Alessio Gagliardi###
(309861, 309861)
 Transient simulations reveallarge Gibbs entropy on ps-timescales for even highest disorder, which mayexplain the efficient separation of hot CT<missing VAR> states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(309941, 309941)
 Inthese materials, long-range diffusion of charge carriers allows for most of thephotogenerated carriers to contribute to the photovoltaic efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310000, 310000)
 Here,time-resolved photoluminescence (PL) microscopy is used to directly probeambipolar carrier diffusion and recombination kinetics in hybrid perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310064, 310066)
This technique is applied to thin films of methylammonium lead tri-iodideM<missing VAR>APbI3 obtained with two different fabrication routes, methylammonium leadtribromide (M<missing VAR>APbBr3), and an alloy of formamidinium lead tri-iodide(FAPbI3) and methylammonium lead bromideFA0.85M<missing VAR>A0.15Pb(I0.85Br0.15)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br3
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310092, 310093)
This technique is applied to thin films of methylammonium lead tri-iodideM<missing VAR>APbI3 obtained with two different fabrication routes, methylammonium leadtribromide (M<missing VAR>APbBr3), and an alloy of formamidinium lead tri-iodide(FAPbI3) and methylammonium lead bromideFA0.85M<missing VAR>A0.15Pb(I0.85Br0.15)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310115, 310115)
This technique is applied to thin films of methylammonium lead tri-iodideM<missing VAR>APbI3 obtained with two different fabrication routes, methylammonium leadtribromide (M<missing VAR>APbBr3), and an alloy of formamidinium lead tri-iodide(FAPbI3) and methylammonium lead bromideFA0.85M<missing VAR>A0.15Pb(I0.85Br0.15)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310118, 310119)
This technique is applied to thin films of methylammonium lead tri-iodideM<missing VAR>APbI3 obtained with two different fabrication routes, methylammonium leadtribromide (M<missing VAR>APbBr3), and an alloy of formamidinium lead tri-iodide(FAPbI3) and methylammonium lead bromideFA0.85M<missing VAR>A0.15Pb(I0.85Br0.15)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310131, 310131)
This technique is applied to thin films of methylammonium lead tri-iodideM<missing VAR>APbI3 obtained with two different fabrication routes, methylammonium leadtribromide (M<missing VAR>APbBr3), and an alloy of formamidinium lead tri-iodide(FAPbI3) and methylammonium lead bromideFA0.85M<missing VAR>A0.15Pb(I0.85Br0.15)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb(I0.85Br0.15)3
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310137, 310144)
This technique is applied to thin films of methylammonium lead tri-iodideM<missing VAR>APbI3 obtained with two different fabrication routes, methylammonium leadtribromide (M<missing VAR>APbBr3), and an alloy of formamidinium lead tri-iodide(FAPbI3) and methylammonium lead bromideFA0.85M<missing VAR>A0.15Pb(I0.85Br0.15)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11249999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310188, 310188)
, in FA0.85M<missing VAR>A0.15Pb(I0.85Br0.15)3and acetonitrile-processed M<missing VAR>APbI3, are found to be several orders ofmagnitude lower than in the other films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb(I0.85Br0.15)3
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310194, 310201)
, in FA0.85M<missing VAR>A0.15Pb(I0.85Br0.15)3and acetonitrile-processed M<missing VAR>APbI3, are found to be several orders ofmagnitude lower than in the other films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11249999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310212, 310214)
, in FA0.85M<missing VAR>A0.15Pb(I0.85Br0.15)3and acetonitrile-processed M<missing VAR>APbI3, are found to be several orders ofmagnitude lower than in the other films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310275, 310275)
 Inparticular, acetonitrile-processed M<missing VAR>APbI3 shows distinct diffusion regimeson short and long timescales with an effective diffusion constant varying over2 orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310287, 310289)
 Inparticular, acetonitrile-processed M<missing VAR>APbI3 shows distinct diffusion regimeson short and long timescales with an effective diffusion constant varying over2 orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Time-resolved imaging of non-diffusive carrier transport in long-lifetime halide perovskite thin films|Aravindan Sridharan,Nakita K. Noel,Hyeon Hwang,Soroush Hafezian,Barry P. Rand,Stéphane Kéna-Cohen###
(310390, 310390)
 Our results also highlight the fact that increases incarrier lifetime in this class of materials are not necessarily concomitantwith increased diffusion lengths and that the PL<missing VAR> quantum efficiency under solarcell operating conditions is a greater indication of material, and ultimatelydevice, quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310493, 310497)
 We investigate the viability of highly efficient organic solar cells (OSCs)based on non-fullerene acceptors (NFA) by taking into consideration efficiencyloss channels and stability issues caused by triplet excitons (TE) formation.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310511, 310512)
 We investigate the viability of highly efficient organic solar cells (OSCs)based on non-fullerene acceptors (NFA) by taking into consideration efficiencyloss channels and stability issues caused by triplet excitons (TE) formation.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310554, 310556)
OSCs based on a blend of the conjugated donor polymer PBD<missing VAR>B-T<missing VAR> and IT<missing VAR>IC asacceptor were fabricated and investigated with electrical, optical andspin-sensitive methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PB
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310576, 310577)
OSCs based on a blend of the conjugated donor polymer PBD<missing VAR>B-T<missing VAR> and IT<missing VAR>IC asacceptor were fabricated and investigated with electrical, optical andspin-sensitive methods.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310579, 310579)
OSCs based on a blend of the conjugated donor polymer PBD<missing VAR>B-T<missing VAR> and IT<missing VAR>IC asacceptor were fabricated and investigated with electrical, optical andspin-sensitive methods.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310585, 310585)
OSCs based on a blend of the conjugated donor polymer PBD<missing VAR>B-T<missing VAR> and IT<missing VAR>IC asacceptor were fabricated and investigated with electrical, optical andspin-sensitive methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IC
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310587, 310588)
OSCs based on a blend of the conjugated donor polymer PBD<missing VAR>B-T<missing VAR> and IT<missing VAR>IC asacceptor were fabricated and investigated with electrical, optical andspin-sensitive methods.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Es
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310633, 310633)
 The spin-Hamiltonian parameters of molecular T<missing VAR>Es andcharge transfer T<missing VAR>Es in IT<missing VAR>IC e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0
Abstract does not contain any numbers.

Es
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310643, 310643)
 The spin-Hamiltonian parameters of molecular T<missing VAR>Es andcharge transfer T<missing VAR>Es in IT<missing VAR>IC e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0
Abstract does not contain any numbers.

I
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310647, 310647)
 The spin-Hamiltonian parameters of molecular T<missing VAR>Es andcharge transfer T<missing VAR>Es in IT<missing VAR>IC e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IC
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310649, 310650)
 The spin-Hamiltonian parameters of molecular T<missing VAR>Es andcharge transfer T<missing VAR>Es in IT<missing VAR>IC e.g.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310693, 310693)
 In addition, theenergetic model describing the photophysical processes in the donor-acceptorblend was derived.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310751, 310751)
 Spin-sensitive photoluminescence measurements prove theformation of charge transfer (CT) states in the blend and the formation of T<missing VAR>Esin the pure materials and the blend.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Es
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310772, 310772)
 Spin-sensitive photoluminescence measurements prove theformation of charge transfer (CT) states in the blend and the formation of T<missing VAR>Esin the pure materials and the blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0
Abstract does not contain any numbers.

PB
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310912, 310913)
 These resultscorrelate well with the high power conversion efficiency of thePBD<missing VAR>B-TITIC-based OSCs and their high stability.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310915, 310915)
 These resultscorrelate well with the high power conversion efficiency of thePBD<missing VAR>B-TITIC-based OSCs and their high stability.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IC
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310920, 310921)
 These resultscorrelate well with the high power conversion efficiency of thePBD<missing VAR>B-TITIC-based OSCs and their high stability.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells|Maria S. Kotova,Giacomo Londi,Johannes Junker,Stefanie Dietz,Alberto Privitera,Kristofer Tvingstedt,David Beljonne,Andreas Sperlich,Vladimir Dyakonov###
(310925, 310927)
 These resultscorrelate well with the high power conversion efficiency of thePBD<missing VAR>B-TITIC-based OSCs and their high stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2O/CH3NH3PbI3
###Atomic scale model and electronic structure of Cu$_2$O/CH$_3$NH$_3$PbI$_3$ interfaces in perovskite solar cells|Jesús E. Castellanos-Águila,Lucas Lodeiro,Eduardo Menéndez-Proupin,Ana L. Montero-Alejo,Pablo Palacios,José C. Conesa,Perla Wahnón###
(310960, 310972)
Atomic scale model and electronic structure of Cu2O/CH3NH3PbI3 interfaces in perovskite solar cells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu2O
###Atomic scale model and electronic structure of Cu$_2$O/CH$_3$NH$_3$PbI$_3$ interfaces in perovskite solar cells|Jesús E. Castellanos-Águila,Lucas Lodeiro,Eduardo Menéndez-Proupin,Ana L. Montero-Alejo,Pablo Palacios,José C. Conesa,Perla Wahnón###
(311080, 311082)
 More detailed knowledge aboutthe Cu2O/perovskite interface is mandatory to improve the photoconversionefficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Atomic scale model and electronic structure of Cu$_2$O/CH$_3$NH$_3$PbI$_3$ interfaces in perovskite solar cells|Jesús E. Castellanos-Águila,Lucas Lodeiro,Eduardo Menéndez-Proupin,Ana L. Montero-Alejo,Pablo Palacios,José C. Conesa,Perla Wahnón###
(311128, 311136)
 Using density functional theory calculations, here we study theinterfaces of CH3NH3PbI3 with Cu2O to assess their influence ondevice performance.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2O
###Atomic scale model and electronic structure of Cu$_2$O/CH$_3$NH$_3$PbI$_3$ interfaces in perovskite solar cells|Jesús E. Castellanos-Águila,Lucas Lodeiro,Eduardo Menéndez-Proupin,Ana L. Montero-Alejo,Pablo Palacios,José C. Conesa,Perla Wahnón###
(311140, 311142)
 Using density functional theory calculations, here we study theinterfaces of CH3NH3PbI3 with Cu2O to assess their influence ondevice performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2O
###Atomic scale model and electronic structure of Cu$_2$O/CH$_3$NH$_3$PbI$_3$ interfaces in perovskite solar cells|Jesús E. Castellanos-Águila,Lucas Lodeiro,Eduardo Menéndez-Proupin,Ana L. Montero-Alejo,Pablo Palacios,José C. Conesa,Perla Wahnón###
(311277, 311279)
 It is shown that the formation ofvacancies in the Cu2O terminating planes is essential to eliminate danglingbonds and trap states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Atomic scale model and electronic structure of Cu$_2$O/CH$_3$NH$_3$PbI$_3$ interfaces in perovskite solar cells|Jesús E. Castellanos-Águila,Lucas Lodeiro,Eduardo Menéndez-Proupin,Ana L. Montero-Alejo,Pablo Palacios,José C. Conesa,Perla Wahnón###
(311373, 311381)
 Thetermination of CH3NH3PbI3 in PbI2 atomic planes seems optimal tomaximize the photoconversion efficiency.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###Atomic scale model and electronic structure of Cu$_2$O/CH$_3$NH$_3$PbI$_3$ interfaces in perovskite solar cells|Jesús E. Castellanos-Águila,Lucas Lodeiro,Eduardo Menéndez-Proupin,Ana L. Montero-Alejo,Pablo Palacios,José C. Conesa,Perla Wahnón###
(311385, 311387)
 Thetermination of CH3NH3PbI3 in PbI2 atomic planes seems optimal tomaximize the photoconversion efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311470, 311470)
 Interfaces between the perovskite active layer and the charge-transportlayers (CT<missing VAR>Ls) play a critical role in both efficiency and stability ofhalide-perovskite photovoltaics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 22.02, '%', 4],[387.0, 20.4, '%', 4],[404.0, 0.4, 'V', 4],[488.0, 35.7, '%', 6]

In
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311544, 311544)
 In this work, we addressed this challenging problem byinserting ultrathin alkali-fluoride (AF) films between the tri-cationlead-iodide perovskite layer and both CT<missing VAR>Ls.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 22.02, '%', 2],[313.0, 20.4, '%', 2],[330.0, 0.4, 'V', 2],[414.0, 35.7, '%', 4]

F
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311574, 311574)
 In this work, we addressed this challenging problem byinserting ultrathin alkali-fluoride (AF) films between the tri-cationlead-iodide perovskite layer and both CT<missing VAR>Ls.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 22.02, '%', 2],[283.0, 20.4, '%', 2],[300.0, 0.4, 'V', 2],[384.0, 35.7, '%', 4]

C
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311600, 311600)
 In this work, we addressed this challenging problem byinserting ultrathin alkali-fluoride (AF) films between the tri-cationlead-iodide perovskite layer and both CT<missing VAR>Ls.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 22.02, '%', 2],[257.0, 20.4, '%', 2],[274.0, 0.4, 'V', 2],[358.0, 35.7, '%', 4]

F
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311651, 311651)
 This bilateral inorganic wallsstrategy makes use of both physical-blocking and chemical-anchoringfunctionalities of the continuous, uniform and compact AF framework on the onehand, the uniformly distributed alkali-iodine coordination at the perovskite-AFinterfaces effectively suppresses the formation of iodine-vacancy defects atthe surfaces and grain boundaries of the whole perovskite film, thus reducingthe trap-assisted recombination at the perovskite-CTL interfaces and therewiththe open-voltage loss; on the other hand, the impermeable AF buffer layerseffectively prevent the bidirectional ion migration at the perovskite-CT<missing VAR>Lsinterfaces even under harsh working conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 22.02, '%', 1],[206.0, 20.4, '%', 1],[223.0, 0.4, 'V', 1],[307.0, 35.7, '%', 3]

F
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311684, 311684)
 This bilateral inorganic wallsstrategy makes use of both physical-blocking and chemical-anchoringfunctionalities of the continuous, uniform and compact AF framework on the onehand, the uniformly distributed alkali-iodine coordination at the perovskite-AFinterfaces effectively suppresses the formation of iodine-vacancy defects atthe surfaces and grain boundaries of the whole perovskite film, thus reducingthe trap-assisted recombination at the perovskite-CTL interfaces and therewiththe open-voltage loss; on the other hand, the impermeable AF buffer layerseffectively prevent the bidirectional ion migration at the perovskite-CT<missing VAR>Lsinterfaces even under harsh working conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 22.02, '%', 1],[173.0, 20.4, '%', 1],[190.0, 0.4, 'V', 1],[274.0, 35.7, '%', 3]

C
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311748, 311748)
 This bilateral inorganic wallsstrategy makes use of both physical-blocking and chemical-anchoringfunctionalities of the continuous, uniform and compact AF framework on the onehand, the uniformly distributed alkali-iodine coordination at the perovskite-AFinterfaces effectively suppresses the formation of iodine-vacancy defects atthe surfaces and grain boundaries of the whole perovskite film, thus reducingthe trap-assisted recombination at the perovskite-CTL interfaces and therewiththe open-voltage loss; on the other hand, the impermeable AF buffer layerseffectively prevent the bidirectional ion migration at the perovskite-CT<missing VAR>Lsinterfaces even under harsh working conditions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 22.02, '%', 1],[109.0, 20.4, '%', 1],[126.0, 0.4, 'V', 1],[210.0, 35.7, '%', 3]

F
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311782, 311782)
 This bilateral inorganic wallsstrategy makes use of both physical-blocking and chemical-anchoringfunctionalities of the continuous, uniform and compact AF framework on the onehand, the uniformly distributed alkali-iodine coordination at the perovskite-AFinterfaces effectively suppresses the formation of iodine-vacancy defects atthe surfaces and grain boundaries of the whole perovskite film, thus reducingthe trap-assisted recombination at the perovskite-CTL interfaces and therewiththe open-voltage loss; on the other hand, the impermeable AF buffer layerseffectively prevent the bidirectional ion migration at the perovskite-CT<missing VAR>Lsinterfaces even under harsh working conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 22.02, '%', 1],[75.0, 20.4, '%', 1],[92.0, 0.4, 'V', 1],[176.0, 35.7, '%', 3]

C
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311807, 311807)
 This bilateral inorganic wallsstrategy makes use of both physical-blocking and chemical-anchoringfunctionalities of the continuous, uniform and compact AF framework on the onehand, the uniformly distributed alkali-iodine coordination at the perovskite-AFinterfaces effectively suppresses the formation of iodine-vacancy defects atthe surfaces and grain boundaries of the whole perovskite film, thus reducingthe trap-assisted recombination at the perovskite-CTL interfaces and therewiththe open-voltage loss; on the other hand, the impermeable AF buffer layerseffectively prevent the bidirectional ion migration at the perovskite-CT<missing VAR>Lsinterfaces even under harsh working conditions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 22.02, '%', 1],[50.0, 20.4, '%', 1],[67.0, 0.4, 'V', 1],[151.0, 35.7, '%', 3]

As
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311825, 311825)
 As a result, a power-conversionefficiency (PCE) of 22.02% (certified efficiency 20.4%) with low open-voltagedeficit (< 0.4V) was achieved for the low-temperature processed inverted planarperovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 22.02, '%', 0],[32.0, 20.4, '%', 0],[49.0, 0.4, 'V', 0],[133.0, 35.7, '%', 2]

PC
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311842, 311843)
 As a result, a power-conversionefficiency (PCE) of 22.02% (certified efficiency 20.4%) with low open-voltagedeficit (< 0.4V) was achieved for the low-temperature processed inverted planarperovskite solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 22.02, '%', 0],[14.0, 20.4, '%', 0],[31.0, 0.4, 'V', 0],[115.0, 35.7, '%', 2]

ISOS
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311915, 311918)
 Exceptional operational stability (500 h<missing VAR>, ISOS-L<missing VAR>-2) andthermal stability (1000 h<missing VAR>, ISOS-D<missing VAR>-2) were obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 22.02, '%', 1],[58.0, 20.4, '%', 1],[41.0, 0.4, 'V', 1],[40.0, 35.7, '%', 1]

ISOS
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311938, 311941)
 Exceptional operational stability (500 h<missing VAR>, ISOS-L<missing VAR>-2) andthermal stability (1000 h<missing VAR>, ISOS-D<missing VAR>-2) were obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 22.02, '%', 1],[81.0, 20.4, '%', 1],[64.0, 0.4, 'V', 1],[17.0, 35.7, '%', 1]

PC
###Impermeable Inorganic Walls Sandwiching Photoactive Layer toward Inverted Perovskite Solar and Indoor-Photovoltaic Devices|Jie Xu,Jun Xi,Hua Dong,Namyoung Ahn,Zonglong Zhu,Jinbo Chen,Peizhou Li,Xinyi zhu,Jinfei Dai,Ziyang Hu,Bo Jiao,Xun Hou,Jingrui Li,Zhaoxin Wu###
(311961, 311962)
 Meanwhile, a 35.7% PCE<missing VAR> wasobtained under dim-light source (1000 lux white LED light) with the optimizeddevice, which is among the best records in perovskite indoor photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 22.02, '%', 2],[104.0, 20.4, '%', 2],[87.0, 0.4, 'V', 2],[3.0, 35.7, '%', 0]

P
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312602, 312602)
 Perovskite solar cells employing self assembled monolayers such as Me-4PACzas hole transport layer has been reported to demonstrate high deviceefficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 20, '%', 4],[296.0, 19.5, '%', 4],[301.0, 18.5, '%', 4],[312.0, 0.16, 'cm', 4],[313.0, 2, ',', 4],[315.0, 0.72, 'cm', 4],[319.0, 1.08, 'cm', 4]

P
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312651, 312651)
 However, the poor perovskite wetting on the Me-4PACz caused by poorperovskite ink interaction with the underlying Me-4PACz presents significantchallenges for fabricating efficient perovskite devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 20, '%', 3],[247.0, 19.5, '%', 3],[252.0, 18.5, '%', 3],[263.0, 0.16, 'cm', 3],[264.0, 2, ',', 3],[266.0, 0.72, 'cm', 3],[270.0, 1.08, 'cm', 3]

P
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312677, 312677)
 However, the poor perovskite wetting on the Me-4PACz caused by poorperovskite ink interaction with the underlying Me-4PACz presents significantchallenges for fabricating efficient perovskite devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 20, '%', 3],[221.0, 19.5, '%', 3],[226.0, 18.5, '%', 3],[237.0, 0.16, 'cm', 3],[238.0, 2, ',', 3],[240.0, 0.72, 'cm', 3],[244.0, 1.08, 'cm', 3]

F
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312719, 312719)
 A triple co-solventsystem comprising of dimethylformamide (DMF), dimethyl sulfoxide (DMSO) andN-methyl-2-pyrrolidone (NM<missing VAR>P) is employed to improve the perovskiteink-substrate interaction and obtain a uniform perovskite layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 20, '%', 2],[179.0, 19.5, '%', 2],[184.0, 18.5, '%', 2],[195.0, 0.16, 'cm', 2],[196.0, 2, ',', 2],[198.0, 0.72, 'cm', 2],[202.0, 1.08, 'cm', 2]

O
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312731, 312731)
 A triple co-solventsystem comprising of dimethylformamide (DMF), dimethyl sulfoxide (DMSO) andN-methyl-2-pyrrolidone (NM<missing VAR>P) is employed to improve the perovskiteink-substrate interaction and obtain a uniform perovskite layer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 20, '%', 2],[167.0, 19.5, '%', 2],[172.0, 18.5, '%', 2],[183.0, 0.16, 'cm', 2],[184.0, 2, ',', 2],[186.0, 0.72, 'cm', 2],[190.0, 1.08, 'cm', 2]

N
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312737, 312737)
 A triple co-solventsystem comprising of dimethylformamide (DMF), dimethyl sulfoxide (DMSO) andN-methyl-2-pyrrolidone (NM<missing VAR>P) is employed to improve the perovskiteink-substrate interaction and obtain a uniform perovskite layer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 20, '%', 2],[161.0, 19.5, '%', 2],[166.0, 18.5, '%', 2],[177.0, 0.16, 'cm', 2],[178.0, 2, ',', 2],[180.0, 0.72, 'cm', 2],[184.0, 1.08, 'cm', 2]

N
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312746, 312746)
 A triple co-solventsystem comprising of dimethylformamide (DMF), dimethyl sulfoxide (DMSO) andN-methyl-2-pyrrolidone (NM<missing VAR>P) is employed to improve the perovskiteink-substrate interaction and obtain a uniform perovskite layer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 20, '%', 2],[152.0, 19.5, '%', 2],[157.0, 18.5, '%', 2],[168.0, 0.16, 'cm', 2],[169.0, 2, ',', 2],[171.0, 0.72, 'cm', 2],[175.0, 1.08, 'cm', 2]

P
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312748, 312748)
 A triple co-solventsystem comprising of dimethylformamide (DMF), dimethyl sulfoxide (DMSO) andN-methyl-2-pyrrolidone (NM<missing VAR>P) is employed to improve the perovskiteink-substrate interaction and obtain a uniform perovskite layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 20, '%', 2],[150.0, 19.5, '%', 2],[155.0, 18.5, '%', 2],[166.0, 0.16, 'cm', 2],[167.0, 2, ',', 2],[169.0, 0.72, 'cm', 2],[173.0, 1.08, 'cm', 2]

In
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312783, 312783)
 In comparisonto DMF, DMSO-based inks, the inclusion of NM<missing VAR>P shows considerably higher bindingenergies of the perovskite ink with Me-4PACz as revealed by density-functionaltheory calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 20, '%', 1],[115.0, 19.5, '%', 1],[120.0, 18.5, '%', 1],[131.0, 0.16, 'cm', 1],[132.0, 2, ',', 1],[134.0, 0.72, 'cm', 1],[138.0, 1.08, 'cm', 1]

F
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312792, 312792)
 In comparisonto DMF, DMSO-based inks, the inclusion of NM<missing VAR>P shows considerably higher bindingenergies of the perovskite ink with Me-4PACz as revealed by density-functionaltheory calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 20, '%', 1],[106.0, 19.5, '%', 1],[111.0, 18.5, '%', 1],[122.0, 0.16, 'cm', 1],[123.0, 2, ',', 1],[125.0, 0.72, 'cm', 1],[129.0, 1.08, 'cm', 1]

SO
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312797, 312798)
 In comparisonto DMF, DMSO-based inks, the inclusion of NM<missing VAR>P shows considerably higher bindingenergies of the perovskite ink with Me-4PACz as revealed by density-functionaltheory calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 20, '%', 1],[100.0, 19.5, '%', 1],[105.0, 18.5, '%', 1],[116.0, 0.16, 'cm', 1],[117.0, 2, ',', 1],[119.0, 0.72, 'cm', 1],[123.0, 1.08, 'cm', 1]

N
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312811, 312811)
 In comparisonto DMF, DMSO-based inks, the inclusion of NM<missing VAR>P shows considerably higher bindingenergies of the perovskite ink with Me-4PACz as revealed by density-functionaltheory calculations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 20, '%', 1],[87.0, 19.5, '%', 1],[92.0, 18.5, '%', 1],[103.0, 0.16, 'cm', 1],[104.0, 2, ',', 1],[106.0, 0.72, 'cm', 1],[110.0, 1.08, 'cm', 1]

P
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312813, 312813)
 In comparisonto DMF, DMSO-based inks, the inclusion of NM<missing VAR>P shows considerably higher bindingenergies of the perovskite ink with Me-4PACz as revealed by density-functionaltheory calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 20, '%', 1],[85.0, 19.5, '%', 1],[90.0, 18.5, '%', 1],[101.0, 0.16, 'cm', 1],[102.0, 2, ',', 1],[104.0, 0.72, 'cm', 1],[108.0, 1.08, 'cm', 1]

P
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312839, 312839)
 In comparisonto DMF, DMSO-based inks, the inclusion of NM<missing VAR>P shows considerably higher bindingenergies of the perovskite ink with Me-4PACz as revealed by density-functionaltheory calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 20, '%', 1],[59.0, 19.5, '%', 1],[64.0, 18.5, '%', 1],[75.0, 0.16, 'cm', 1],[76.0, 2, ',', 1],[78.0, 0.72, 'cm', 1],[82.0, 1.08, 'cm', 1]

PbI3
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312987, 312989)
 Importantly,this perovskite ink-substrate interaction approach is universal and helps inobtaining a uniform layer and high photovoltaic device performance for otherperovskite compositions such as M<missing VAR>APbI3, FAM<missing VAR>APbI3-xBrx, and M<missing VAR>A-freeFACsPbI3-xBrx.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 20, '%', 1],[89.0, 19.5, '%', 1],[84.0, 18.5, '%', 1],[73.0, 0.16, 'cm', 1],[72.0, 2, ',', 1],[70.0, 0.72, 'cm', 1],[66.0, 1.08, 'cm', 1]

F
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312992, 312992)
 Importantly,this perovskite ink-substrate interaction approach is universal and helps inobtaining a uniform layer and high photovoltaic device performance for otherperovskite compositions such as M<missing VAR>APbI3, FAM<missing VAR>APbI3-xBrx, and M<missing VAR>A-freeFACsPbI3-xBrx.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 20, '%', 1],[94.0, 19.5, '%', 1],[89.0, 18.5, '%', 1],[78.0, 0.16, 'cm', 1],[77.0, 2, ',', 1],[75.0, 0.72, 'cm', 1],[71.0, 1.08, 'cm', 1]

PbI3-x
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(312996, 313000)
 Importantly,this perovskite ink-substrate interaction approach is universal and helps inobtaining a uniform layer and high photovoltaic device performance for otherperovskite compositions such as M<missing VAR>APbI3, FAM<missing VAR>APbI3-xBrx, and M<missing VAR>A-freeFACsPbI3-xBrx.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[102.0, 20, '%', 1],[98.0, 19.5, '%', 1],[93.0, 18.5, '%', 1],[82.0, 0.16, 'cm', 1],[81.0, 2, ',', 1],[79.0, 0.72, 'cm', 1],[75.0, 1.08, 'cm', 1]

F
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(313012, 313012)
 Importantly,this perovskite ink-substrate interaction approach is universal and helps inobtaining a uniform layer and high photovoltaic device performance for otherperovskite compositions such as M<missing VAR>APbI3, FAM<missing VAR>APbI3-xBrx, and M<missing VAR>A-freeFACsPbI3-xBrx.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 20, '%', 1],[114.0, 19.5, '%', 1],[109.0, 18.5, '%', 1],[98.0, 0.16, 'cm', 1],[97.0, 2, ',', 1],[95.0, 0.72, 'cm', 1],[91.0, 1.08, 'cm', 1]

CsPbI3-x
###A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells|Ashish Kulkarni,Ranjini Sarkar,Samah Akel,Maria Haeser,Benjamin Klingebiel,Matthias Wuttig,Sudip Chakraborty,Michael Saliba,Thomas Kirchartz###
(313014, 313019)
 Importantly,this perovskite ink-substrate interaction approach is universal and helps inobtaining a uniform layer and high photovoltaic device performance for otherperovskite compositions such as M<missing VAR>APbI3, FAM<missing VAR>APbI3-xBrx, and M<missing VAR>A-freeFACsPbI3-xBrx.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[120.0, 20, '%', 1],[116.0, 19.5, '%', 1],[111.0, 18.5, '%', 1],[100.0, 0.16, 'cm', 1],[99.0, 2, ',', 1],[97.0, 0.72, 'cm', 1],[93.0, 1.08, 'cm', 1]

Te2
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313034, 313035)
Janus -Te2X<missing VAR> (X<missing VAR>  S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'D', 2],[342.0, 21, '%', 7]

S
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313042, 313042)
Janus -Te2X<missing VAR> (X<missing VAR>  S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'D', 2],[335.0, 21, '%', 7]

Se
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313045, 313045)
Janus -Te2X<missing VAR> (X<missing VAR>  S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'D', 2],[332.0, 21, '%', 7]

In
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313119, 313119)
 In this work, we have investigated the novel 2D allotropes i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'D', 0],[258.0, 21, '%', 5]

Te2
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313148, 313149)
,beta-Te2X<missing VAR> (X<missing VAR>  S, Se) using first-principles calculations and study theirpotential applications in light harvesting devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'D', 1],[228.0, 21, '%', 4]

S
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313156, 313156)
,beta-Te2X<missing VAR> (X<missing VAR>  S, Se) using first-principles calculations and study theirpotential applications in light harvesting devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'D', 1],[221.0, 21, '%', 4]

Se
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313159, 313159)
,beta-Te2X<missing VAR> (X<missing VAR>  S, Se) using first-principles calculations and study theirpotential applications in light harvesting devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'D', 1],[218.0, 21, '%', 4]

II
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313278, 313279)
 Wehave proposed the type-II heterojunction solar cells and calculated their powerconversion efficiencies (PCEs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2, 'D', 4],[98.0, 21, '%', 1]

(PCEs)
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313300, 313304)
 Wehave proposed the type-II heterojunction solar cells and calculated their powerconversion efficiencies (PCEs).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[165.0, 2, 'D', 4],[73.0, 21, '%', 1]

S
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313343, 313343)
 The small conduction band offset andappropriate band gap of donor material in case ofbeta-Te2S(S-Side)/alpha-Te2S(Te-Side) heterojunction results in thePCE<missing VAR> of  21%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 2, 'D', 5],[34.0, 21, '%', 0]

S
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313345, 313345)
 The small conduction band offset andappropriate band gap of donor material in case ofbeta-Te2S(S-Side)/alpha-Te2S(Te-Side) heterojunction results in thePCE<missing VAR> of  21%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 2, 'D', 5],[32.0, 21, '%', 0]

S
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313354, 313354)
 The small conduction band offset andappropriate band gap of donor material in case ofbeta-Te2S(S-Side)/alpha-Te2S(Te-Side) heterojunction results in thePCE<missing VAR> of  21%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 2, 'D', 5],[23.0, 21, '%', 0]

Te
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313356, 313356)
 The small conduction band offset andappropriate band gap of donor material in case ofbeta-Te2S(S-Side)/alpha-Te2S(Te-Side) heterojunction results in thePCE<missing VAR> of  21%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 2, 'D', 5],[21.0, 21, '%', 0]

PC
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313370, 313371)
 The small conduction band offset andappropriate band gap of donor material in case ofbeta-Te2S(S-Side)/alpha-Te2S(Te-Side) heterojunction results in thePCE<missing VAR> of  21%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 2, 'D', 5],[6.0, 21, '%', 0]

In
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313381, 313381)
 In addition to that, the band alignments of these monolayersproperly engulf the redox potentials of the water.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 2, 'D', 6],[4.0, 21, '%', 1]

H
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313438, 313438)
 The overpotentials requiredto trigger the hydrogen reduction (HER) and water oxidation (OER) halfreactions reveal that HER and OER preferred the acidic and neutral mediums,respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 2, 'D', 7],[61.0, 21, '%', 2]

O
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313450, 313450)
 The overpotentials requiredto trigger the hydrogen reduction (HER) and water oxidation (OER) halfreactions reveal that HER and OER preferred the acidic and neutral mediums,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 2, 'D', 7],[73.0, 21, '%', 2]

H
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313464, 313464)
 The overpotentials requiredto trigger the hydrogen reduction (HER) and water oxidation (OER) halfreactions reveal that HER and OER preferred the acidic and neutral mediums,respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 2, 'D', 7],[87.0, 21, '%', 2]

O
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313470, 313470)
 The overpotentials requiredto trigger the hydrogen reduction (HER) and water oxidation (OER) halfreactions reveal that HER and OER preferred the acidic and neutral mediums,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 2, 'D', 7],[93.0, 21, '%', 2]

S
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313502, 313502)
 The calculated solar-to-hydrogen (ST<missing VAR>H) efficiencies ofbeta-Te2S (beta-Te2Se) monolayers come out to be  13 % (12 %),respectively, which implies their practical applications in water splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 2, 'D', 8],[125.0, 21, '%', 3]

H
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313504, 313504)
 The calculated solar-to-hydrogen (ST<missing VAR>H) efficiencies ofbeta-Te2S (beta-Te2Se) monolayers come out to be  13 % (12 %),respectively, which implies their practical applications in water splitting.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 2, 'D', 8],[127.0, 21, '%', 3]

Te2S
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313514, 313516)
 The calculated solar-to-hydrogen (ST<missing VAR>H) efficiencies ofbeta-Te2S (beta-Te2Se) monolayers come out to be  13 % (12 %),respectively, which implies their practical applications in water splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 2, 'D', 8],[137.0, 21, '%', 3]

Se
###Janus $β$-Te$_2$X (X = S, Se) Monolayers for Efficient Excitonic Solar Cells and Photocatalytic Water Splitting|Jaspreet Singh,Ashok Kumar###
(313523, 313523)
 The calculated solar-to-hydrogen (ST<missing VAR>H) efficiencies ofbeta-Te2S (beta-Te2Se) monolayers come out to be  13 % (12 %),respectively, which implies their practical applications in water splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 2, 'D', 8],[146.0, 21, '%', 3]

C
###Polymeric Squaraine Dyes as Electron Donors in Bulk Heterojunction Solar Cells|Sebastian F. Voelker,Shinobu Uemura,Moritz Limpinsel,Markus Mingebach,Carsten Deibel,Vladimir Dyakonov,Christoph Lambert###
(313741, 313741)
 1.7 as determined by gel-permeation chromatography (G<missing VAR>PC).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1.7, 'as', 0],[120.0, 6, ',', 3],[232.0, 300, 'to', 5]

C61
###Polymeric Squaraine Dyes as Electron Donors in Bulk Heterojunction Solar Cells|Sebastian F. Voelker,Shinobu Uemura,Moritz Limpinsel,Markus Mingebach,Carsten Deibel,Vladimir Dyakonov,Christoph Lambert###
(313868, 313869)
 Bulk heterojunction solar cells wereprepared from blends of the polysquaraine with the fullerene derivative[6,6]-phenyl C61-butyric acid methyl ester (PCBM) in different weight ratios(13 to 11).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 1.7, 'as', 3],[7.0, 6, ',', 0],[104.0, 300, 'to', 2]

PCB
###Polymeric Squaraine Dyes as Electron Donors in Bulk Heterojunction Solar Cells|Sebastian F. Voelker,Shinobu Uemura,Moritz Limpinsel,Markus Mingebach,Carsten Deibel,Vladimir Dyakonov,Christoph Lambert###
(313880, 313882)
 Bulk heterojunction solar cells wereprepared from blends of the polysquaraine with the fullerene derivative[6,6]-phenyl C61-butyric acid methyl ester (PCBM) in different weight ratios(13 to 11).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1.7, 'as', 3],[19.0, 6, ',', 0],[91.0, 300, 'to', 2]

Cs
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314066, 314066)
 The spectral response of quantum well solar cells (Q<missing VAR>WSCs) is well understood.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSC
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314086, 314088)
We describe work on Q<missing VAR>WSC dark current theory which combined with SR<missing VAR> theoryyields a system efficiency.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314102, 314102)
We describe work on Q<missing VAR>WSC dark current theory which combined with SR<missing VAR> theoryyields a system efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314133, 314133)
 A methodology published for single quantum well(SQ<missing VAR>W) systems is extended to MQW systems in the Al(x) Ga(1-x) As andInGa(0.53x) As(x) P systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314135, 314135)
 A methodology published for single quantum well(SQ<missing VAR>W) systems is extended to MQW systems in the Al(x) Ga(1-x) As andInGa(0.53x) As(x) P systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314148, 314148)
 A methodology published for single quantum well(SQ<missing VAR>W) systems is extended to MQW systems in the Al(x) Ga(1-x) As andInGa(0.53x) As(x) P systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314156, 314156)
 A methodology published for single quantum well(SQ<missing VAR>W) systems is extended to MQW systems in the Al(x) Ga(1-x) As andInGa(0.53x) As(x) P systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga(1-x)
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314161, 314166)
 A methodology published for single quantum well(SQ<missing VAR>W) systems is extended to MQW systems in the Al(x) Ga(1-x) As andInGa(0.53x) As(x) P systems.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314168, 314168)
 A methodology published for single quantum well(SQ<missing VAR>W) systems is extended to MQW systems in the Al(x) Ga(1-x) As andInGa(0.53x) As(x) P systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314180, 314180)
 A methodology published for single quantum well(SQ<missing VAR>W) systems is extended to MQW systems in the Al(x) Ga(1-x) As andInGa(0.53x) As(x) P systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314185, 314185)
 A methodology published for single quantum well(SQ<missing VAR>W) systems is extended to MQW systems in the Al(x) Ga(1-x) As andInGa(0.53x) As(x) P systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314210, 314210)
 The materials considered are dominated byShockley-Read-Hall (SR<missing VAR>H) recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314212, 314212)
 The materials considered are dominated byShockley-Read-Hall (SR<missing VAR>H) recombination.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314220, 314220)
 The SR<missing VAR>H formalism expresses the darkcurrent in terms of carrier recombination through mid-gap traps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314222, 314222)
 The SR<missing VAR>H formalism expresses the darkcurrent in terms of carrier recombination through mid-gap traps.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314256, 314256)
 The SR<missing VAR>Hrecombination rate depends on the electron and hole densities of states (D<missing VAR>OS)in the barriers and wells, which are well known, and of carrier non-radiativelifetimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314258, 314258)
 The SR<missing VAR>Hrecombination rate depends on the electron and hole densities of states (D<missing VAR>OS)in the barriers and wells, which are well known, and of carrier non-radiativelifetimes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314286, 314286)
 The SR<missing VAR>Hrecombination rate depends on the electron and hole densities of states (D<missing VAR>OS)in the barriers and wells, which are well known, and of carrier non-radiativelifetimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314364, 314366)
 Consistency over a range of AlGaAscontrols and Q<missing VAR>WSCs is examined, and the model is applied to Q<missing VAR>WSCs in InGaAsP onInP substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314374, 314376)
 Consistency over a range of AlGaAscontrols and Q<missing VAR>WSCs is examined, and the model is applied to Q<missing VAR>WSCs in InGaAsP onInP substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314396, 314398)
 Consistency over a range of AlGaAscontrols and Q<missing VAR>WSCs is examined, and the model is applied to Q<missing VAR>WSCs in InGaAsP onInP substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaAsP
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314402, 314405)
 Consistency over a range of AlGaAscontrols and Q<missing VAR>WSCs is examined, and the model is applied to Q<missing VAR>WSCs in InGaAsP onInP substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InP
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314410, 314411)
 Consistency over a range of AlGaAscontrols and Q<missing VAR>WSCs is examined, and the model is applied to Q<missing VAR>WSCs in InGaAsP onInP substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314432, 314432)
 We find that the dark currents of MQW systems require areduction of the quasi Fermi level separation between carrier populations inthe wells relative to barrier material, in line with previous studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Modelling Multi Quantum Well Solar Cell Efficiency|James P. Connolly,Jenny Nelson,Ian Ballard,Keith W. J. Barnham,Carsten Rohr,Chris Button,John Roberts,Tom Foxon###
(314494, 314496)
Consequences for Q<missing VAR>WSCs are considered suggesting a high efficiency potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314578, 314578)
 A ferroelectric field effect in the bulk heterojunction was found when anexternal electric field (EEF) was applied on the active layer of polymer solarcells (PSCs) during the annealing process of the active layer spin-coated withpoly (3-hexylthiophene)[6,6]-phenyl-C61 butyric acid methyl ester (P3HT<missing VAR>PCBM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 6, ',', 0],[123.0, 7.2, 'to', 1],[124.0, 8.0, 'mA', 1],[127.0, 2, ',', 1],[141.0, 2.4, 'to', 1],[144.0, 2.8, '%', 1],[173.0, 49, '%', 1]

(PSCs)
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314602, 314606)
 A ferroelectric field effect in the bulk heterojunction was found when anexternal electric field (EEF) was applied on the active layer of polymer solarcells (PSCs) during the annealing process of the active layer spin-coated withpoly (3-hexylthiophene)[6,6]-phenyl-C61 butyric acid methyl ester (P3HT<missing VAR>PCBM).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 6, ',', 0],[95.0, 7.2, 'to', 1],[96.0, 8.0, 'mA', 1],[99.0, 2, ',', 1],[113.0, 2.4, 'to', 1],[116.0, 2.8, '%', 1],[145.0, 49, '%', 1]

C61
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314646, 314647)
 A ferroelectric field effect in the bulk heterojunction was found when anexternal electric field (EEF) was applied on the active layer of polymer solarcells (PSCs) during the annealing process of the active layer spin-coated withpoly (3-hexylthiophene)[6,6]-phenyl-C61 butyric acid methyl ester (P3HT<missing VAR>PCBM).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 6, ',', 0],[54.0, 7.2, 'to', 1],[55.0, 8.0, 'mA', 1],[58.0, 2, ',', 1],[72.0, 2.4, 'to', 1],[75.0, 2.8, '%', 1],[104.0, 49, '%', 1]

P3H
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314658, 314660)
 A ferroelectric field effect in the bulk heterojunction was found when anexternal electric field (EEF) was applied on the active layer of polymer solarcells (PSCs) during the annealing process of the active layer spin-coated withpoly (3-hexylthiophene)[6,6]-phenyl-C61 butyric acid methyl ester (P3HT<missing VAR>PCBM).
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 6, ',', 0],[41.0, 7.2, 'to', 1],[42.0, 8.0, 'mA', 1],[45.0, 2, ',', 1],[59.0, 2.4, 'to', 1],[62.0, 2.8, '%', 1],[91.0, 49, '%', 1]

PCB
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314662, 314664)
 A ferroelectric field effect in the bulk heterojunction was found when anexternal electric field (EEF) was applied on the active layer of polymer solarcells (PSCs) during the annealing process of the active layer spin-coated withpoly (3-hexylthiophene)[6,6]-phenyl-C61 butyric acid methyl ester (P3HT<missing VAR>PCBM).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 6, ',', 0],[37.0, 7.2, 'to', 1],[38.0, 8.0, 'mA', 1],[41.0, 2, ',', 1],[55.0, 2.4, 'to', 1],[58.0, 2.8, '%', 1],[87.0, 49, '%', 1]

PSCs
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314691, 314693)
For one direction field, the short circuit current density of PSCs was improvedfrom 7.2 to 8.0 mA/cm2, the power conversion efficiency increased from 2.4 to2.8%, and the incident photon-to-current conversion efficiency increased from42 to 49% corresponding to the different EEF magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 6, ',', 1],[8.0, 7.2, 'to', 0],[9.0, 8.0, 'mA', 0],[12.0, 2, ',', 0],[26.0, 2.4, 'to', 0],[29.0, 2.8, '%', 0],[58.0, 49, '%', 0]

F
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314764, 314764)
For one direction field, the short circuit current density of PSCs was improvedfrom 7.2 to 8.0 mA/cm2, the power conversion efficiency increased from 2.4 to2.8%, and the incident photon-to-current conversion efficiency increased from42 to 49% corresponding to the different EEF magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 6, ',', 1],[63.0, 7.2, 'to', 0],[62.0, 8.0, 'mA', 0],[59.0, 2, ',', 0],[45.0, 2.4, 'to', 0],[42.0, 2.8, '%', 0],[13.0, 49, '%', 0]

F
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314787, 314787)
 For an oppositedirection field, the applied EEF brought a minus effect on the performancementioned above.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 6, ',', 2],[86.0, 7.2, 'to', 1],[85.0, 8.0, 'mA', 1],[82.0, 2, ',', 1],[68.0, 2.4, 'to', 1],[65.0, 2.8, '%', 1],[36.0, 49, '%', 1]

F
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314811, 314811)
 EEF treatment can orientate molecular ordering of the polymer,and change the morphology of the active layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 6, ',', 3],[110.0, 7.2, 'to', 2],[109.0, 8.0, 'mA', 2],[106.0, 2, ',', 2],[92.0, 2.4, 'to', 2],[89.0, 2.8, '%', 2],[60.0, 49, '%', 2]

PSCs
###Ferroelectric field effect of the bulk heterojunction in polymer solar cells|Meng Li,Heng Ma,Hairui Liu,Yurong Jiang,Heying Niu,Adil Amat###
(314899, 314901)
 The authors suggest aexplanation that the ferroelectric field has been built in the active layer,and therefore it plays a key role in PSCs system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 6, ',', 4],[198.0, 7.2, 'to', 3],[197.0, 8.0, 'mA', 3],[194.0, 2, ',', 3],[180.0, 2.4, 'to', 3],[177.0, 2.8, '%', 3],[148.0, 49, '%', 3]

(SC)
###Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels|Philippe Dreyer,Monica Morales-Masis,Sylvain Nicolay,Christophe Ballif,Julien Perruisseau-Carrier###
(314997, 315000)
 This work addresses the integration of reflectarray antennas (R<missing VAR>A) on thinfilm Solar Cell (SC) panels, as a mean to save real estate, weight, or cost inplatforms such as satellites or transportable autonomous antenna systems.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, -2.45, 'dB', 4],[342.0, 90, '%', 5],[350.0, 85, '%', 6]

SC
###Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels|Philippe Dreyer,Monica Morales-Masis,Sylvain Nicolay,Christophe Ballif,Julien Perruisseau-Carrier###
(315115, 315116)
 Ourgoal is to design a good R<missing VAR>A unit cell in terms of phase response and bandwidth,while simultaneously achieving high optical transparency and low microwaveloss, to preserve good SC and R<missing VAR>A energy efficiencies, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, -2.45, 'dB', 3],[226.0, 90, '%', 4],[234.0, 85, '%', 5]

SC
###Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels|Philippe Dreyer,Monica Morales-Masis,Sylvain Nicolay,Christophe Ballif,Julien Perruisseau-Carrier###
(315226, 315227)
 The results obtained at the unit cell leveldemonstrates the feasibility of integrating R<missing VAR>A on a thin-film SC, preservingfor the first time good performance in terms of both SC and R<missing VAR>A efficiency.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, -2.45, 'dB', 1],[115.0, 90, '%', 2],[123.0, 85, '%', 3]

SC
###Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels|Philippe Dreyer,Monica Morales-Masis,Sylvain Nicolay,Christophe Ballif,Julien Perruisseau-Carrier###
(315253, 315254)
 The results obtained at the unit cell leveldemonstrates the feasibility of integrating R<missing VAR>A on a thin-film SC, preservingfor the first time good performance in terms of both SC and R<missing VAR>A efficiency.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, -2.45, 'dB', 1],[88.0, 90, '%', 2],[96.0, 85, '%', 3]

B
###Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels|Philippe Dreyer,Monica Morales-Masis,Sylvain Nicolay,Christophe Ballif,Julien Perruisseau-Carrier###
(315321, 315321)
-0.25d<missing VAR>B) and average optical transparency in the visible spectrum of 90% (resp.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, -2.45, 'dB', 1],[21.0, 90, '%', 0],[29.0, 85, '%', 1]

(NC)
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315443, 315446)
 Over the past thirty years, it has been consistently observed that surfaceengineering of colloidal nanocrystals (NC) is key to their performanceparameters.
Featurization successful!
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315462, 315462)
 In the case of lead chalcogenide NCs, for example, replacing thiolswith halide anion surface termination has been shown to increase powerconversion efficiency in NC-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCs
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315474, 315475)
 In the case of lead chalcogenide NCs, for example, replacing thiolswith halide anion surface termination has been shown to increase powerconversion efficiency in NC-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NC
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315517, 315518)
 In the case of lead chalcogenide NCs, for example, replacing thiolswith halide anion surface termination has been shown to increase powerconversion efficiency in NC-based solar cells.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315561, 315561)
 To gain insight into the originsof these improvements, we perform ab initio molecular dynamics (AIMD) onexperimentally-relevant sized lead sulfide (PbS) NCs constructed with thiol orCl, Br, and I anion surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PbS)
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315579, 315582)
 To gain insight into the originsof these improvements, we perform ab initio molecular dynamics (AIMD) onexperimentally-relevant sized lead sulfide (PbS) NCs constructed with thiol orCl, Br, and I anion surfaces.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCs
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315584, 315585)
 To gain insight into the originsof these improvements, we perform ab initio molecular dynamics (AIMD) onexperimentally-relevant sized lead sulfide (PbS) NCs constructed with thiol orCl, Br, and I anion surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315596, 315596)
 To gain insight into the originsof these improvements, we perform ab initio molecular dynamics (AIMD) onexperimentally-relevant sized lead sulfide (PbS) NCs constructed with thiol orCl, Br, and I anion surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315599, 315599)
 To gain insight into the originsof these improvements, we perform ab initio molecular dynamics (AIMD) onexperimentally-relevant sized lead sulfide (PbS) NCs constructed with thiol orCl, Br, and I anion surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315604, 315604)
 To gain insight into the originsof these improvements, we perform ab initio molecular dynamics (AIMD) onexperimentally-relevant sized lead sulfide (PbS) NCs constructed with thiol orCl, Br, and I anion surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCs
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315631, 315632)
 The surface of both the thiol- andhalide-terminated NCs exhibit low and high-energy phonon modes with largethermal displacements not present in bulk PbS; however, halide anion surfacetermination reduces the overlap of the electronic wavefunctions with thesevibration modes.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbS
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315665, 315666)
 The surface of both the thiol- andhalide-terminated NCs exhibit low and high-energy phonon modes with largethermal displacements not present in bulk PbS; however, halide anion surfacetermination reduces the overlap of the electronic wavefunctions with thesevibration modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCs
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315734, 315735)
 These findings suggest that electron-phonon interactions willbe reduced in the halide terminated NCs, a conclusion that is supported byanalyzing the time-dependent evolution of the electronic energies andwavefunctions extracted from the AIMD.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315781, 315781)
 These findings suggest that electron-phonon interactions willbe reduced in the halide terminated NCs, a conclusion that is supported byanalyzing the time-dependent evolution of the electronic energies andwavefunctions extracted from the AIMD.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCs
###Influence of the Surface of a Nanocrystal on its Electronic and Phononic Properties|Nuri Yazdani,Deniz Bozyigit,Kantawong Vuttivorakulchai,Mathieu Luisier,Vanessa Wood###
(315815, 315816)
 This work explains why electron-phononinteractions are crucial to charge carrier dynamics in NCs and how surfaceengineering can be applied to systematically control their electronic andphononic properties.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(315946, 315946)
Revealing the stability and efficiency enhancement in mixed halide perovskites M<missing VAR>APb(I1-xClx)3 with ab initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 7, '%', 5]

I1-xCl
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(315948, 315952)
Revealing the stability and efficiency enhancement in mixed halide perovskites M<missing VAR>APb(I1-xClx)3 with ab initio calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[303.0, 7, '%', 5]

Cl
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(315974, 315974)
 A little addition of Cl to ceM<missing VAR>APbI3 has been reported to improve thematerial stability as well as light harvesting and carrier conductingproperties of organometal trihalide perovskites, the key component ofperovskite solar cell (PSC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 7, '%', 4]

PbI3
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(315981, 315983)
 A little addition of Cl to ceM<missing VAR>APbI3 has been reported to improve thematerial stability as well as light harvesting and carrier conductingproperties of organometal trihalide perovskites, the key component ofperovskite solar cell (PSC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 7, '%', 4]

(PSC)
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(316045, 316049)
 A little addition of Cl to ceM<missing VAR>APbI3 has been reported to improve thematerial stability as well as light harvesting and carrier conductingproperties of organometal trihalide perovskites, the key component ofperovskite solar cell (PSC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 7, '%', 4]

PSC
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(316068, 316070)
 However, the mechanism of performance enhancementof PSC by Cl addition is still unclear.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 7, '%', 3]

Cl
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(316074, 316074)
 However, the mechanism of performance enhancementof PSC by Cl addition is still unclear.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 7, '%', 3]

Cl
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(316115, 316115)
 Here, we apply the efficient virtualcrystal approximation method to revealing the effects of Cl addition on thestructural, electronic, optical properties and material stability ofceM<missing VAR>APb(I1-xClx)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 7, '%', 2]

Pb
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(316146, 316146)
 Here, we apply the efficient virtualcrystal approximation method to revealing the effects of Cl addition on thestructural, electronic, optical properties and material stability ofceM<missing VAR>APb(I1-xClx)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 7, '%', 2]

I1-xCl
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(316148, 316152)
 Here, we apply the efficient virtualcrystal approximation method to revealing the effects of Cl addition on thestructural, electronic, optical properties and material stability ofceM<missing VAR>APb(I1-xClx)3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[103.0, 7, '%', 2]

Cl
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(316181, 316181)
 Our it ab initio calculations present that as theincrease of Cl content cubic lattice constants and static dielectric constantsdecrease linearly, while band gaps and exciton binding energies increasequadratically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 7, '%', 1]

Cl
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(316249, 316249)
 Moreover, we find the minimum of exciton binding energy at theCl content of 7%, at which the chemical decomposition reaction changescoincidentally to be from exothermic to endothermic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 7, '%', 0]

PSCs
###Revealing the stability and efficiency enhancement in mixed halide perovskites MAPb(I$_{1-x}$Cl$_x$)$_3$ with ab initio calculations|Un-Gi Jong,Chol-Jun Yu,Yong-Man Jang,Gum-Chol Ri,Song-Nam Hong,Yong-Hyon Pae###
(316346, 316348)
 This reveals new prospects for understanding anddesigning of stable, high efficiency PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 7, '%', 2]

III
###Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations|Vladimir Maryasin,Davide Bucci,Quentin Rafhay,Federico Panicco,Jérôme Michallon,Anne Kaminski-Cachopo###
(316373, 316375)
Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 27.6, '%', 7]

V
###Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations|Vladimir Maryasin,Davide Bucci,Quentin Rafhay,Federico Panicco,Jérôme Michallon,Anne Kaminski-Cachopo###
(316377, 316377)
Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 27.6, '%', 7]

Si
###Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations|Vladimir Maryasin,Davide Bucci,Quentin Rafhay,Federico Panicco,Jérôme Michallon,Anne Kaminski-Cachopo###
(316383, 316383)
Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 27.6, '%', 7]

III
###Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations|Vladimir Maryasin,Davide Bucci,Quentin Rafhay,Federico Panicco,Jérôme Michallon,Anne Kaminski-Cachopo###
(316433, 316435)
 Effect of geometrical and structural parameters on the efficiency of thetandem solar cell based on the III-V nanowire array on silicon is studied bythe means of coupled opto-electrical simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 27.6, '%', 6]

V
###Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations|Vladimir Maryasin,Davide Bucci,Quentin Rafhay,Federico Panicco,Jérôme Michallon,Anne Kaminski-Cachopo###
(316437, 316437)
 Effect of geometrical and structural parameters on the efficiency of thetandem solar cell based on the III-V nanowire array on silicon is studied bythe means of coupled opto-electrical simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 27.6, '%', 6]

AlGaAs
###Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations|Vladimir Maryasin,Davide Bucci,Quentin Rafhay,Federico Panicco,Jérôme Michallon,Anne Kaminski-Cachopo###
(316485, 316487)
 A close to realisticstructure, consisting of AlGaAs core-shell nanowire array, connected through atunnel diode to a Si subcell is modelled, revealing the impact of top contactlayer, growth mask and tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 27.6, '%', 5]

Si
###Technological guidelines for the design of tandem III-V nanowire on Si solar cells from opto-electrical simulations|Vladimir Maryasin,Davide Bucci,Quentin Rafhay,Federico Panicco,Jérôme Michallon,Anne Kaminski-Cachopo###
(316513, 316513)
 A close to realisticstructure, consisting of AlGaAs core-shell nanowire array, connected through atunnel diode to a Si subcell is modelled, revealing the impact of top contactlayer, growth mask and tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 27.6, '%', 5]

O2
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317259, 317260)
Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces Catechol on TiO2(110).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317288, 317288)
 Optimizing the photovoltaic efficiency of dye-sensitized solar cells (D<missing VAR>SSC)based on staggered gap heterojunctions requires a detailed understanding ofsub-band gap transitions in the visible from the dye directly to thesubstrates<missing VAR> conduction band (CB) (type-II D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CB)
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317347, 317350)
 Optimizing the photovoltaic efficiency of dye-sensitized solar cells (D<missing VAR>SSC)based on staggered gap heterojunctions requires a detailed understanding ofsub-band gap transitions in the visible from the dye directly to thesubstrates<missing VAR> conduction band (CB) (type-II D<missing VAR>SSCs).
Featurization successful!
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317355, 317356)
 Optimizing the photovoltaic efficiency of dye-sensitized solar cells (D<missing VAR>SSC)based on staggered gap heterojunctions requires a detailed understanding ofsub-band gap transitions in the visible from the dye directly to thesubstrates<missing VAR> conduction band (CB) (type-II D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317361, 317361)
 Optimizing the photovoltaic efficiency of dye-sensitized solar cells (D<missing VAR>SSC)based on staggered gap heterojunctions requires a detailed understanding ofsub-band gap transitions in the visible from the dye directly to thesubstrates<missing VAR> conduction band (CB) (type-II D<missing VAR>SSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSC
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317409, 317411)
 Here, we calculate theoptical absorption spectra and spatial distribution of bright excitons in thevisible region for a prototypical D<missing VAR>SSC, catechol on rutile TiO2(110), as afunction of coverage and deprotonation of the OH anchoring groups.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317421, 317422)
 Here, we calculate theoptical absorption spectra and spatial distribution of bright excitons in thevisible region for a prototypical D<missing VAR>SSC, catechol on rutile TiO2(110), as afunction of coverage and deprotonation of the OH anchoring groups.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OH
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317447, 317448)
 Here, we calculate theoptical absorption spectra and spatial distribution of bright excitons in thevisible region for a prototypical D<missing VAR>SSC, catechol on rutile TiO2(110), as afunction of coverage and deprotonation of the OH anchoring groups.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317475, 317476)
 This isaccomplished by solving the Bethe-Salpeter equation (BSE) based on hybridrange-separated exchange and correlation functional (HSE<missing VAR>06) density functionaltheory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317500, 317501)
 This isaccomplished by solving the Bethe-Salpeter equation (BSE) based on hybridrange-separated exchange and correlation functional (HSE<missing VAR>06) density functionaltheory (DFT) calculations.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317578, 317579)
 Such a treatment is necessary to accurately describethe interfacial level alignment and the weakly bound charge transfertransitions that are the dominant absorption mechanism in type-II D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSCs
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317582, 317584)
 Such a treatment is necessary to accurately describethe interfacial level alignment and the weakly bound charge transfertransitions that are the dominant absorption mechanism in type-II D<missing VAR>SSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317590, 317591)
 OurHSE<missing VAR>06 BSE<missing VAR> spectra agree semi-quantitatively with spectra measured for catecholon anatase TiO2 nanoparticles.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317595, 317596)
 OurHSE<missing VAR>06 BSE<missing VAR> spectra agree semi-quantitatively with spectra measured for catecholon anatase TiO2 nanoparticles.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317622, 317624)
 OurHSE<missing VAR>06 BSE<missing VAR> spectra agree semi-quantitatively with spectra measured for catecholon anatase TiO2 nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OH
###Optical Absorption Spectra and Excitons of Dye-Substrate Interfaces: Catechol on TiO$_2$(110)|Duncan John Mowbray,Annapaola Migani###
(317643, 317644)
 Our results suggest deprotonation ofcatechols<missing VAR> OH anchoring groups, while being nearly isoenergetic at highcoverages, shifts the onset of the absorption spectra to lower energies, with aconcomitant increase in photovoltaic efficiency.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSC)
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(317908, 317912)
 An approach using a differential evolution (DE) optimization algorithm isproposed to optimize design parameters for improving the optical absorptionefficiency of plasmonic solar cells (PSC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 19.45, '%', 5]

PSC
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(317965, 317967)
 This approach is based onformulating the parameters extraction as a search and optimization process inorder to maximize the optical absorption in the PSC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 19.45, '%', 4]

PSC
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(317991, 317993)
 Determining the physicalparameters of three-dimensional (3-D) PSC is critical for designing andestimating their performance, however, due to the complex design of the PSC,parameters extraction is time and calculation intensive.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 19.45, '%', 3]

PSC
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(318030, 318032)
 Determining the physicalparameters of three-dimensional (3-D) PSC is critical for designing andestimating their performance, however, due to the complex design of the PSC,parameters extraction is time and calculation intensive.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 19.45, '%', 3]

In
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(318051, 318051)
 In this paper, thistechnique is demonstrated for the case of commercial thin-film hydrogenatedamorphous silicon (a-SiH) solar photovoltaic cells enhanced through patternedsilver nano-disk plasmonic structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 19.45, '%', 2]

H
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(318092, 318092)
 In this paper, thistechnique is demonstrated for the case of commercial thin-film hydrogenatedamorphous silicon (a-SiH) solar photovoltaic cells enhanced through patternedsilver nano-disk plasmonic structures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 19.45, '%', 2]

PSC
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(318128, 318130)
 The DE optimization of PSC structureswas performed to execute a real-time parameter search and optimization.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 19.45, '%', 1]

O
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(318168, 318168)
 Thepredicted optical enhancement (OE) in optical absorption in the active layer ofthe PSC for AM<missing VAR>-1.5 solar spectrum was found to be over 19.45% higher comparedto the reference cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 19.45, '%', 0]

PSC
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(318191, 318193)
 Thepredicted optical enhancement (OE) in optical absorption in the active layer ofthe PSC for AM<missing VAR>-1.5 solar spectrum was found to be over 19.45% higher comparedto the reference cells.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 19.45, '%', 0]

PSC
###Optimal Design of Thin-film Plasmonic Solar Cells using Differential Evolution Optimization Algorithms|Ankit Vora,Satyadhar Joshi,Arun Matai,Joshua M. Pearce,Durdu Guney###
(318262, 318264)
 The proposed technique offers higher accuracy andautomates the tuning of control parameters of PSC in a time-efficient manner.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 19.45, '%', 1]

CsPbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318306, 318309)
First-principles study on the chemical decomposition of inorganic perovskites ceCsPbI3 and ceRbPbI3 at finite temperature and pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbPbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318314, 318317)
First-principles study on the chemical decomposition of inorganic perovskites ceCsPbI3 and ceRbPbI3 at finite temperature and pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs(Rb)PbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318337, 318343)
 Inorganic halide perovskite ceCs(Rb)PbI3 has attracted significantresearch interest in the application of light-absorbing material of perovskitesolar cells (PSCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSCs)
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318379, 318383)
 Inorganic halide perovskite ceCs(Rb)PbI3 has attracted significantresearch interest in the application of light-absorbing material of perovskitesolar cells (PSCs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rb
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318452, 318452)
 Thus, we investigate the effect ofsubstituting Rb for Cs in ceCsPbI3 on the chemical decomposition andthermodynamic stability using first-principles thermodynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318456, 318456)
 Thus, we investigate the effect ofsubstituting Rb for Cs in ceCsPbI3 on the chemical decomposition andthermodynamic stability using first-principles thermodynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318461, 318464)
 Thus, we investigate the effect ofsubstituting Rb for Cs in ceCsPbI3 on the chemical decomposition andthermodynamic stability using first-principles thermodynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs1-xRb
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318508, 318512)
 By calculatingthe formation energies of solid solutions ceCs1-xRbx<missing VAR>PbI3 from theiringredients ceCs1-xRbx<missing VAR>I and cePbI2, we find that the best matchbetween efficiency and stability can be achieved at the Rb content x<missing VAR>approx0.7.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

PbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318514, 318516)
 By calculatingthe formation energies of solid solutions ceCs1-xRbx<missing VAR>PbI3 from theiringredients ceCs1-xRbx<missing VAR>I and cePbI2, we find that the best matchbetween efficiency and stability can be achieved at the Rb content x<missing VAR>approx0.7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs1-xRb
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318526, 318530)
 By calculatingthe formation energies of solid solutions ceCs1-xRbx<missing VAR>PbI3 from theiringredients ceCs1-xRbx<missing VAR>I and cePbI2, we find that the best matchbetween efficiency and stability can be achieved at the Rb content x<missing VAR>approx0.7.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

I
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318532, 318532)
 By calculatingthe formation energies of solid solutions ceCs1-xRbx<missing VAR>PbI3 from theiringredients ceCs1-xRbx<missing VAR>I and cePbI2, we find that the best matchbetween efficiency and stability can be achieved at the Rb content x<missing VAR>approx0.7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318537, 318539)
 By calculatingthe formation energies of solid solutions ceCs1-xRbx<missing VAR>PbI3 from theiringredients ceCs1-xRbx<missing VAR>I and cePbI2, we find that the best matchbetween efficiency and stability can be achieved at the Rb content x<missing VAR>approx0.7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rb
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318573, 318573)
 By calculatingthe formation energies of solid solutions ceCs1-xRbx<missing VAR>PbI3 from theiringredients ceCs1-xRbx<missing VAR>I and cePbI2, we find that the best matchbetween efficiency and stability can be achieved at the Rb content x<missing VAR>approx0.7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs1-xRb
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318606, 318610)
 The calculated Helmholtz free energy of solid solutions indicates thatceCs1-xRbx<missing VAR>PbI3 has a good thermodynamic stability at roomtemperature due to a good miscibility of ceCsPbI3 and ceRbPbI3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

PbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318612, 318614)
 The calculated Helmholtz free energy of solid solutions indicates thatceCs1-xRbx<missing VAR>PbI3 has a good thermodynamic stability at roomtemperature due to a good miscibility of ceCsPbI3 and ceRbPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318646, 318649)
 The calculated Helmholtz free energy of solid solutions indicates thatceCs1-xRbx<missing VAR>PbI3 has a good thermodynamic stability at roomtemperature due to a good miscibility of ceCsPbI3 and ceRbPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbPbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318654, 318657)
 The calculated Helmholtz free energy of solid solutions indicates thatceCs1-xRbx<missing VAR>PbI3 has a good thermodynamic stability at roomtemperature due to a good miscibility of ceCsPbI3 and ceRbPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbPbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318679, 318682)
 Throughlattice-dynamics calculations, we further highlight that ceRbPbI3 neverstabilize in cubic phase at any temperature and pressure due to the chemicaldecomposition into its ingredients ceRbI and cePbI2, while ceCsPbI3can be stabilized in the cubic phase at the temperature range of 0-600 K andthe pressure range of 0-4 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbI
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318723, 318724)
 Throughlattice-dynamics calculations, we further highlight that ceRbPbI3 neverstabilize in cubic phase at any temperature and pressure due to the chemicaldecomposition into its ingredients ceRbI and cePbI2, while ceCsPbI3can be stabilized in the cubic phase at the temperature range of 0-600 K andthe pressure range of 0-4 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318729, 318731)
 Throughlattice-dynamics calculations, we further highlight that ceRbPbI3 neverstabilize in cubic phase at any temperature and pressure due to the chemicaldecomposition into its ingredients ceRbI and cePbI2, while ceCsPbI3can be stabilized in the cubic phase at the temperature range of 0-600 K andthe pressure range of 0-4 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPbI3
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318737, 318740)
 Throughlattice-dynamics calculations, we further highlight that ceRbPbI3 neverstabilize in cubic phase at any temperature and pressure due to the chemicaldecomposition into its ingredients ceRbI and cePbI2, while ceCsPbI3can be stabilized in the cubic phase at the temperature range of 0-600 K andthe pressure range of 0-4 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318771, 318771)
 Throughlattice-dynamics calculations, we further highlight that ceRbPbI3 neverstabilize in cubic phase at any temperature and pressure due to the chemicaldecomposition into its ingredients ceRbI and cePbI2, while ceCsPbI3can be stabilized in the cubic phase at the temperature range of 0-600 K andthe pressure range of 0-4 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318789, 318789)
 Throughlattice-dynamics calculations, we further highlight that ceRbPbI3 neverstabilize in cubic phase at any temperature and pressure due to the chemicaldecomposition into its ingredients ceRbI and cePbI2, while ceCsPbI3can be stabilized in the cubic phase at the temperature range of 0-600 K andthe pressure range of 0-4 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###First-principles study on the chemical decomposition of inorganic perovskites \ce{CsPbI3} and \ce{RbPbI3} at finite temperature and pressure|Un-Gi Jong,Chol-Jun Yu,Yun-Hyok Kye,Chol-Ho Kim,Son-Guk Ri,Yue Chen###
(318845, 318847)
 Our work reasonably explains the experimentalobservations, and paves the way for understanding material stability of theinorganic halide perovskites and designing efficient inorganic halide PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbS
###Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots|Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos###
(318879, 318880)
Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.7, 'eV', 0],[70.0, 0.8, 'eV', 2],[200.0, 0.7, 'eV', 3],[286.0, 37, 'mA', 4],[301.0, 5.5, 'mA', 4]

III
###Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots|Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos###
(318961, 318963)
However, semiconductor absorbers with bandgap lower than 0.8 eV have beenlimited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized byhigh manufacturing costs and complicated lattice matching requirements in theirgrowth and integration with the higher bandgap cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.7, 'eV', 2],[11.0, 0.8, 'eV', 0],[117.0, 0.7, 'eV', 1],[203.0, 37, 'mA', 2],[218.0, 5.5, 'mA', 2]

V
###Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots|Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos###
(318965, 318965)
However, semiconductor absorbers with bandgap lower than 0.8 eV have beenlimited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized byhigh manufacturing costs and complicated lattice matching requirements in theirgrowth and integration with the higher bandgap cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.7, 'eV', 2],[15.0, 0.8, 'eV', 0],[115.0, 0.7, 'eV', 1],[201.0, 37, 'mA', 2],[216.0, 5.5, 'mA', 2]

(InGaAs)
###Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots|Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos###
(318967, 318971)
However, semiconductor absorbers with bandgap lower than 0.8 eV have beenlimited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized byhigh manufacturing costs and complicated lattice matching requirements in theirgrowth and integration with the higher bandgap cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0.7, 'eV', 2],[17.0, 0.8, 'eV', 0],[109.0, 0.7, 'eV', 1],[195.0, 37, 'mA', 2],[210.0, 5.5, 'mA', 2]

IV
###Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots|Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos###
(318975, 318976)
However, semiconductor absorbers with bandgap lower than 0.8 eV have beenlimited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized byhigh manufacturing costs and complicated lattice matching requirements in theirgrowth and integration with the higher bandgap cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.7, 'eV', 2],[25.0, 0.8, 'eV', 0],[104.0, 0.7, 'eV', 1],[190.0, 37, 'mA', 2],[205.0, 5.5, 'mA', 2]

(Ge)
###Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots|Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos###
(318978, 318980)
However, semiconductor absorbers with bandgap lower than 0.8 eV have beenlimited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized byhigh manufacturing costs and complicated lattice matching requirements in theirgrowth and integration with the higher bandgap cells.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.7, 'eV', 2],[28.0, 0.8, 'eV', 0],[100.0, 0.7, 'eV', 1],[186.0, 37, 'mA', 2],[201.0, 5.5, 'mA', 2]

PbS
###Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots|Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos###
(319057, 319058)
 Here, we have developedsolution processed low bandgap photovoltaic devices based on PbS colloidalquantum dots (CQ<missing VAR>Ds) with a bandgap of 0.7 eV suited for boththermo-photovoltaic as well as low energy solar photon harvesting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 0.7, 'eV', 3],[107.0, 0.8, 'eV', 1],[22.0, 0.7, 'eV', 0],[108.0, 37, 'mA', 1],[123.0, 5.5, 'mA', 1]

C
###Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots|Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos###
(319068, 319068)
 Here, we have developedsolution processed low bandgap photovoltaic devices based on PbS colloidalquantum dots (CQ<missing VAR>Ds) with a bandgap of 0.7 eV suited for boththermo-photovoltaic as well as low energy solar photon harvesting.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0.7, 'eV', 3],[118.0, 0.8, 'eV', 1],[12.0, 0.7, 'eV', 0],[98.0, 37, 'mA', 1],[113.0, 5.5, 'mA', 1]

Ds
###Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots|Yu Bi,Arnau Bertran,Shuchi Gupta,Iñigo Ramiro,Santanu Pradhan,Sotirios Christodoulou,Shanmukh-Naidu Majji,Mehmet Zafer Akgul,Gerasimos Konstantatos###
(319070, 319070)
 Here, we have developedsolution processed low bandgap photovoltaic devices based on PbS colloidalquantum dots (CQ<missing VAR>Ds) with a bandgap of 0.7 eV suited for boththermo-photovoltaic as well as low energy solar photon harvesting.
EXCEPTION 3: IndexError for Ds
C
[195.0, 0.7, 'eV', 3],[120.0, 0.8, 'eV', 1],[10.0, 0.7, 'eV', 0],[96.0, 37, 'mA', 1],[111.0, 5.5, 'mA', 1]

Cs
###Rational Design of Photo-Electrochemical Hybrid Devices based on Graphene and Chlamydomonas reinhardtii Light-Harvesting Proteins|Martha Ortiz-Torres,Miguel Fernández-Niño,Juan C Cruz,Andrea Capasso,Fabio Matteocci,Edgar J. Patiño,Yenny Hernández,Andrés Fernando González Barrios###
(319342, 319342)
 Dye-sensitized solar cells (D<missing VAR>SSCs) have been highlighted as the promisingalternative to generate clean energy based on low pay-back time materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 4, 'from', 4]

C
###Rational Design of Photo-Electrochemical Hybrid Devices based on Graphene and Chlamydomonas reinhardtii Light-Harvesting Proteins|Martha Ortiz-Torres,Miguel Fernández-Niño,Juan C Cruz,Andrea Capasso,Fabio Matteocci,Edgar J. Patiño,Yenny Hernández,Andrés Fernando González Barrios###
(319462, 319462)
 Recently,light-harvesting complexes (L<missing VAR>HC) have been proposed as potential dyes in D<missing VAR>SSCsbased on their higher light-absorption efficiencies as compared to syntheticdyes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 4, 'from', 2]

SSCs
###Rational Design of Photo-Electrochemical Hybrid Devices based on Graphene and Chlamydomonas reinhardtii Light-Harvesting Proteins|Martha Ortiz-Torres,Miguel Fernández-Niño,Juan C Cruz,Andrea Capasso,Fabio Matteocci,Edgar J. Patiño,Yenny Hernández,Andrés Fernando González Barrios###
(319480, 319482)
 Recently,light-harvesting complexes (L<missing VAR>HC) have been proposed as potential dyes in D<missing VAR>SSCsbased on their higher light-absorption efficiencies as compared to syntheticdyes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 4, 'from', 2]

In
###Rational Design of Photo-Electrochemical Hybrid Devices based on Graphene and Chlamydomonas reinhardtii Light-Harvesting Proteins|Martha Ortiz-Torres,Miguel Fernández-Niño,Juan C Cruz,Andrea Capasso,Fabio Matteocci,Edgar J. Patiño,Yenny Hernández,Andrés Fernando González Barrios###
(319511, 319511)
 In this work, photo-electrochemical hybrid devices were rationallydesigned by adding for the first time Leu and Lys tags to heterologouslyexpressed light-harvesting proteins from Chlamydomonas reinhardtii, thusallowing their proper orientation and immobilization on graphene electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 4, 'from', 1]

C
###Rational Design of Photo-Electrochemical Hybrid Devices based on Graphene and Chlamydomonas reinhardtii Light-Harvesting Proteins|Martha Ortiz-Torres,Miguel Fernández-Niño,Juan C Cruz,Andrea Capasso,Fabio Matteocci,Edgar J. Patiño,Yenny Hernández,Andrés Fernando González Barrios###
(319605, 319605)
The light-harvesting complex 4 from C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 4, 'from', 0]

C4
###Rational Design of Photo-Electrochemical Hybrid Devices based on Graphene and Chlamydomonas reinhardtii Light-Harvesting Proteins|Martha Ortiz-Torres,Miguel Fernández-Niño,Juan C Cruz,Andrea Capasso,Fabio Matteocci,Edgar J. Patiño,Yenny Hernández,Andrés Fernando González Barrios###
(319613, 319614)
 reinhardtii (L<missing VAR>HC4) was initiallyexpressed in Escherichia coli, purified via affinity chromatography andsubsequently immobilized on plasma-treated thin-film graphene electrodes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 4, 'from', 1]

HC
###Rational Design of Photo-Electrochemical Hybrid Devices based on Graphene and Chlamydomonas reinhardtii Light-Harvesting Proteins|Martha Ortiz-Torres,Miguel Fernández-Niño,Juan C Cruz,Andrea Capasso,Fabio Matteocci,Edgar J. Patiño,Yenny Hernández,Andrés Fernando González Barrios###
(319760, 319761)
 Our results suggest that a new family of graphene-basedthin-film photovoltaic devices can be manufactured from rationally tagged L<missing VAR>HCproteins and opens the possibility to further explore fundamental processes ofenergy transfer for biological components interfaced with synthetic materials.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 4, 'from', 3]

CH3NH3PbI3
###Relativistic quasiparticle self-consistent electronic structure of hybrid halide perovskite photovoltaic absorbers|Federico Brivio,Keith T. Butler,Aron Walsh,Mark van Schilfgaarde###
(319866, 319874)
 Solar cells based on a light absorbing layer of the organometal halideperovskite CH3NH3PbI3 have recently reached 15% conversion efficiency,though how these materials work remains largely unknown.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 15, '%', 0],[307.0, 5.7, 'eV', 7]

W
###Relativistic quasiparticle self-consistent electronic structure of hybrid halide perovskite photovoltaic absorbers|Federico Brivio,Keith T. Butler,Aron Walsh,Mark van Schilfgaarde###
(319937, 319937)
 We analyse theelectronic structure and optical properties within the quasiparticleself-consistent G<missing VAR>W approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 15, '%', 1],[244.0, 5.7, 'eV', 6]

W
###Relativistic quasiparticle self-consistent electronic structure of hybrid halide perovskite photovoltaic absorbers|Federico Brivio,Keith T. Butler,Aron Walsh,Mark van Schilfgaarde###
(320039, 320039)
 Quasiparticleself-consistency is essential for an accurate description of the bandstructure bandgaps are much larger than what is predicted by the local densityapproximation (LDA) or G<missing VAR>W based on the LDA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 15, '%', 3],[142.0, 5.7, 'eV', 4]

In
###Relativistic quasiparticle self-consistent electronic structure of hybrid halide perovskite photovoltaic absorbers|Federico Brivio,Keith T. Butler,Aron Walsh,Mark van Schilfgaarde###
(320074, 320074)
 In addition, spin orbit coupling stronglymodifies the band structure and gives rise to unconventional dispersionrelations and a Dresselhaus splitting at the band edges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 15, '%', 5],[107.0, 5.7, 'eV', 2]

TiO2
###Relativistic quasiparticle self-consistent electronic structure of hybrid halide perovskite photovoltaic absorbers|Federico Brivio,Keith T. Butler,Aron Walsh,Mark van Schilfgaarde###
(320207, 320209)
 Thesurface ionisation potential (workfunction) is calculated to be 5.7 eV withrespect to the vacuum level, explaining efficient carrier transfer to TiO2and Au electrical contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 15, '%', 7],[26.0, 5.7, 'eV', 0]

Au
###Relativistic quasiparticle self-consistent electronic structure of hybrid halide perovskite photovoltaic absorbers|Federico Brivio,Keith T. Butler,Aron Walsh,Mark van Schilfgaarde###
(320214, 320214)
 Thesurface ionisation potential (workfunction) is calculated to be 5.7 eV withrespect to the vacuum level, explaining efficient carrier transfer to TiO2and Au electrical contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 15, '%', 7],[33.0, 5.7, 'eV', 0]

As
###White light emission from silicon nanoparticles|Chengyun Zhang,Yi Xu,Jin Liu,Juntao Li,Jin Xiang,Hui Li,Jinxiang Li,Qiaofeng Dai,Sheng Lan,Andrey E. Miroshnichenko###
(320242, 320242)
 As one of the most important semiconductors, silicon (Si) has been used tofabricate electronic devices, waveguides, detectors, and solar cells etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Si)
###White light emission from silicon nanoparticles|Chengyun Zhang,Yi Xu,Jin Liu,Juntao Li,Jin Xiang,Hui Li,Jinxiang Li,Qiaofeng Dai,Sheng Lan,Andrey E. Miroshnichenko###
(320259, 320261)
 As one of the most important semiconductors, silicon (Si) has been used tofabricate electronic devices, waveguides, detectors, and solar cells etc.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###White light emission from silicon nanoparticles|Chengyun Zhang,Yi Xu,Jin Liu,Juntao Li,Jin Xiang,Hui Li,Jinxiang Li,Qiaofeng Dai,Sheng Lan,Andrey E. Miroshnichenko###
(320312, 320312)
However, its indirect bandgap hinders the use of Si for making good emitters1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###White light emission from silicon nanoparticles|Chengyun Zhang,Yi Xu,Jin Liu,Juntao Li,Jin Xiang,Hui Li,Jinxiang Li,Qiaofeng Dai,Sheng Lan,Andrey E. Miroshnichenko###
(320334, 320334)
For integrated photonic circuits, Si-based emitters with sizes in the range of100-300 nm are highly desirable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###White light emission from silicon nanoparticles|Chengyun Zhang,Yi Xu,Jin Liu,Juntao Li,Jin Xiang,Hui Li,Jinxiang Li,Qiaofeng Dai,Sheng Lan,Andrey E. Miroshnichenko###
(320398, 320398)
 Here, we show that efficient white lightemission can be realized in spherical and cylindrical Si nanoparticles withfeature sizes of 200 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###White light emission from silicon nanoparticles|Chengyun Zhang,Yi Xu,Jin Liu,Juntao Li,Jin Xiang,Hui Li,Jinxiang Li,Qiaofeng Dai,Sheng Lan,Andrey E. Miroshnichenko###
(320560, 320560)
 The lifetime of the whitelight is as short as 52 ps, almost three orders of magnitude smaller than thestate-of-the-art results reported so far for Si (10 ns).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###White light emission from silicon nanoparticles|Chengyun Zhang,Yi Xu,Jin Liu,Juntao Li,Jin Xiang,Hui Li,Jinxiang Li,Qiaofeng Dai,Sheng Lan,Andrey E. Miroshnichenko###
(320586, 320586)
 Our finding paves theway for realizing efficient Si-based emitters compatible with currentsemiconductor fabrication technology, which can be integrated to photoniccircuits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeO3
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320651, 320653)
Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FP
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320671, 320672)
 Ferroelectric photovoltaics (FPVs) have drawn much attention owing to theirhigh stability, environmental safety, anomalously high photovoltages, coupledwith reversibly switchable photovoltaic responses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FP
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320725, 320726)
 However, FPVs suffer fromextremely low photocurrents, which is primarily due to their wide band gaps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FP
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320776, 320777)
Here, we present a new class of FPVs by demonstrating switchable ferroelectricphotovoltaic effects using hexagonal ferrite (h-RFeO3) thin films having narrowband gaps of 1.2 e<missing VAR>V, where R<missing VAR> denotes rare-earth ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320804, 320805)
Here, we present a new class of FPVs by demonstrating switchable ferroelectricphotovoltaic effects using hexagonal ferrite (h-RFeO3) thin films having narrowband gaps of 1.2 e<missing VAR>V, where R<missing VAR> denotes rare-earth ions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320826, 320826)
Here, we present a new class of FPVs by demonstrating switchable ferroelectricphotovoltaic effects using hexagonal ferrite (h-RFeO3) thin films having narrowband gaps of 1.2 e<missing VAR>V, where R<missing VAR> denotes rare-earth ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FP
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320842, 320843)
 FPVs with narrow bandgaps suggests their potential applicability as photovoltaic and optoelectronicdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeO3
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320880, 320882)
 The h-RFeO3 films further exhibit reasonably large ferroelectricpolarizations, which possibly reduces a rapid recombination rate of thephoto-generated electron-hole pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320939, 320940)
 The power conversion efficiency (PCE) ofh-RFeO3 thin-film devices is sensitive on the magnitude of polarization.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeO3
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320950, 320952)
 The power conversion efficiency (PCE) ofh-RFeO3 thin-film devices is sensitive on the magnitude of polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320975, 320975)
 In thecase of h<missing VAR>-TmFeO3 (h-TFO) thin film, the measured PCE<missing VAR> is twice as large as thatof the BiFeO3 thin film, a prototypic FPV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmFeO3
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320986, 320989)
 In thecase of h<missing VAR>-TmFeO3 (h-TFO) thin film, the measured PCE<missing VAR> is twice as large as thatof the BiFeO3 thin film, a prototypic FPV.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(320996, 320996)
 In thecase of h<missing VAR>-TmFeO3 (h-TFO) thin film, the measured PCE<missing VAR> is twice as large as thatof the BiFeO3 thin film, a prototypic FPV.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(321008, 321009)
 In thecase of h<missing VAR>-TmFeO3 (h-TFO) thin film, the measured PCE<missing VAR> is twice as large as thatof the BiFeO3 thin film, a prototypic FPV.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(321029, 321032)
 In thecase of h<missing VAR>-TmFeO3 (h-TFO) thin film, the measured PCE<missing VAR> is twice as large as thatof the BiFeO3 thin film, a prototypic FPV.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FPV
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(321043, 321045)
 In thecase of h<missing VAR>-TmFeO3 (h-TFO) thin film, the measured PCE<missing VAR> is twice as large as thatof the BiFeO3 thin film, a prototypic FPV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FP
###Switchable Ferroelectric Photovoltaic Effects in Epitaxial Thin Films of h-RFeO3 having Narrow Optical Band Gaps|Hyeon Han,Donghoon Kim,Ji Hyun Lee,Jucheol Park,Sang Yeol Nam,Mingi Choi,Kijung Yong,Hyun Myung Jang###
(321114, 321115)
 This work thus demonstrates anew class of FPVs towards high-efficiency solar cell and optoelectronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3-x
###Methylamine Vapor Exposure for Improved Morphology and Stability of Cesium-Methylammonium Lead Halide Perovskite Thin-Films|Akash Singh,Arun Singh Chouhan,Sushobhan Avasthi###
(321198, 321202)
 Mixed-cation Cesium-Methylammonium lead halide perovskite (CsxM<missing VAR>A1-x<missing VAR>PbI3-xBrx)thin-films have been used to demonstrate stable and efficient perovskitedevices.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[189.0, 9, 'hours', 4],[317.0, 50, 'micro', 6],[322.0, 9, 'hours', 6]

Cs
###Methylamine Vapor Exposure for Improved Morphology and Stability of Cesium-Methylammonium Lead Halide Perovskite Thin-Films|Akash Singh,Arun Singh Chouhan,Sushobhan Avasthi###
(321246, 321246)
 However, a systematic study of the Cs incorporation on the propertiesof the perovskite films has not been reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 9, 'hours', 3],[273.0, 50, 'micro', 5],[278.0, 9, 'hours', 5]

In
###Methylamine Vapor Exposure for Improved Morphology and Stability of Cesium-Methylammonium Lead Halide Perovskite Thin-Films|Akash Singh,Arun Singh Chouhan,Sushobhan Avasthi###
(321274, 321274)
 In this report, Impact of Cesiumincorporation on the minority carrier recombination lifetime ofCesium-Methylammonium lead halide perovskite thin-films is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 9, 'hours', 2],[245.0, 50, 'micro', 4],[250.0, 9, 'hours', 4]

Cs0.10
###Methylamine Vapor Exposure for Improved Morphology and Stability of Cesium-Methylammonium Lead Halide Perovskite Thin-Films|Akash Singh,Arun Singh Chouhan,Sushobhan Avasthi###
(321498, 321499)
MVE treated films are more oriented along (110) direction and were even morestable in ambient, with Cs0.10M<missing VAR>A0.90PbI2.90Br0.10 films showing lifetime ofalmost 50 micro seconds after 9 hours of ambient exposure, twice the lifetimeof a comparable M<missing VAR>APbI3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 9, 'hours', 2],[20.0, 50, 'micro', 0],[25.0, 9, 'hours', 0]

PbI2.90Br0.10
###Methylamine Vapor Exposure for Improved Morphology and Stability of Cesium-Methylammonium Lead Halide Perovskite Thin-Films|Akash Singh,Arun Singh Chouhan,Sushobhan Avasthi###
(321503, 321507)
MVE treated films are more oriented along (110) direction and were even morestable in ambient, with Cs0.10M<missing VAR>A0.90PbI2.90Br0.10 films showing lifetime ofalmost 50 micro seconds after 9 hours of ambient exposure, twice the lifetimeof a comparable M<missing VAR>APbI3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.725,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 9, 'hours', 2],[12.0, 50, 'micro', 0],[17.0, 9, 'hours', 0]

PbI3
###Methylamine Vapor Exposure for Improved Morphology and Stability of Cesium-Methylammonium Lead Halide Perovskite Thin-Films|Akash Singh,Arun Singh Chouhan,Sushobhan Avasthi###
(321548, 321550)
MVE treated films are more oriented along (110) direction and were even morestable in ambient, with Cs0.10M<missing VAR>A0.90PbI2.90Br0.10 films showing lifetime ofalmost 50 micro seconds after 9 hours of ambient exposure, twice the lifetimeof a comparable M<missing VAR>APbI3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 9, 'hours', 2],[29.0, 50, 'micro', 0],[24.0, 9, 'hours', 0]

In
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321643, 321643)
 In order to overcome the disadvantages of MgH2 towards its applications inon-board hydrogen storage, first principle calculations have been performed forTi (2+, 3+, and 4+) substituted MgH2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgH2
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321657, 321659)
 In order to overcome the disadvantages of MgH2 towards its applications inon-board hydrogen storage, first principle calculations have been performed forTi (2+, 3+, and 4+) substituted MgH2.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321694, 321694)
 In order to overcome the disadvantages of MgH2 towards its applications inon-board hydrogen storage, first principle calculations have been performed forTi (2+, 3+, and 4+) substituted MgH2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgH2
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321713, 321715)
 In order to overcome the disadvantages of MgH2 towards its applications inon-board hydrogen storage, first principle calculations have been performed forTi (2+, 3+, and 4+) substituted MgH2.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321731, 321731)
 Our calculated enthalpy of formation andH site energy implies that Ti substitution in Mg site reduces the stability ofMgH2 which improve the hydrogen storage properties and Ti prefers to be in +4oxidation state in MgH2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321741, 321741)
 Our calculated enthalpy of formation andH site energy implies that Ti substitution in Mg site reduces the stability ofMgH2 which improve the hydrogen storage properties and Ti prefers to be in +4oxidation state in MgH2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321747, 321747)
 Our calculated enthalpy of formation andH site energy implies that Ti substitution in Mg site reduces the stability ofMgH2 which improve the hydrogen storage properties and Ti prefers to be in +4oxidation state in MgH2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgH2
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321760, 321762)
 Our calculated enthalpy of formation andH site energy implies that Ti substitution in Mg site reduces the stability ofMgH2 which improve the hydrogen storage properties and Ti prefers to be in +4oxidation state in MgH2.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321778, 321778)
 Our calculated enthalpy of formation andH site energy implies that Ti substitution in Mg site reduces the stability ofMgH2 which improve the hydrogen storage properties and Ti prefers to be in +4oxidation state in MgH2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgH2
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321798, 321800)
 Our calculated enthalpy of formation andH site energy implies that Ti substitution in Mg site reduces the stability ofMgH2 which improve the hydrogen storage properties and Ti prefers to be in +4oxidation state in MgH2.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(IB)
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321878, 321881)
 Electronic structure obtainedfrom hybrid functional calculations show that intermediate bands (IB) areformed in Ti4+ substituted MgH2 which could improve the solar cell efficienciesdue to multiple photon absorption from valence band to conduction band via IBsand converts low energy photons in the solar spectrum also into electricity.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgH2
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321896, 321898)
 Electronic structure obtainedfrom hybrid functional calculations show that intermediate bands (IB) areformed in Ti4+ substituted MgH2 which could improve the solar cell efficienciesdue to multiple photon absorption from valence band to conduction band via IBsand converts low energy photons in the solar spectrum also into electricity.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(321939, 321939)
 Electronic structure obtainedfrom hybrid functional calculations show that intermediate bands (IB) areformed in Ti4+ substituted MgH2 which could improve the solar cell efficienciesdue to multiple photon absorption from valence band to conduction band via IBsand converts low energy photons in the solar spectrum also into electricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgH2
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(322001, 322003)
Further, our calculated carrier effective masses and optical absorption spectrashow that Ti4+ substituted MgH2 is suitable for higher efficiency photovoltaicapplications.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgH2
###Ti4+ Substituted Magnesium Hydride as Promising Material for Hydrogen Storage and Photovoltaic Applications|R Varunaa,S Kiruthika,P Ravindran###
(322035, 322037)
 Our results suggest that Ti4+ substituted MgH2 can be consideredas a promising material for hydrogen storage as well as photovoltaicapplications.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322200, 322200)
 However, the limited perovskite stabilityrestricts the processing methods and temperatures (<110 C) that can be used todeposit the oxide overlayers, with the latter limiting the electronicproperties of the oxides achievable.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 10, 'nm', 1],[235.0, 2, '%', 4],[333.0, 16.5, '%', 6],[345.0, 19.4, '%', 6],[367.0, 84, '%', 6]

In
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322247, 322247)
 In this work, we demonstrate analternative to existing methods that can grow pinhole-free TiOx (x<missing VAR> 2.00+/-0.05) films with the requisite thickness in <1 min without vacuum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 10, 'nm', 2],[188.0, 2, '%', 3],[286.0, 16.5, '%', 5],[298.0, 19.4, '%', 5],[320.0, 84, '%', 5]

Ti
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322279, 322279)
 In this work, we demonstrate analternative to existing methods that can grow pinhole-free TiOx (x<missing VAR> 2.00+/-0.05) films with the requisite thickness in <1 min without vacuum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 10, 'nm', 2],[156.0, 2, '%', 3],[254.0, 16.5, '%', 5],[266.0, 19.4, '%', 5],[288.0, 84, '%', 5]

P
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322335, 322335)
 Thistechnique is atmospheric pressure chemical vapor deposition (AP-CVD).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 10, 'nm', 3],[100.0, 2, '%', 2],[198.0, 16.5, '%', 4],[210.0, 19.4, '%', 4],[232.0, 84, '%', 4]

CV
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322337, 322338)
 Thistechnique is atmospheric pressure chemical vapor deposition (AP-CVD).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 10, 'nm', 3],[97.0, 2, '%', 2],[195.0, 16.5, '%', 4],[207.0, 19.4, '%', 4],[229.0, 84, '%', 4]

C
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322366, 322366)
 The rapidbut soft deposition enables growth temperatures of >180 degC to be used tocoat the perovskite.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 10, 'nm', 4],[69.0, 2, '%', 1],[167.0, 16.5, '%', 3],[179.0, 19.4, '%', 3],[201.0, 84, '%', 3]

C
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322392, 322392)
 This is >70 degC higher than achievable by currentmethods and results in more conductive TiOx films, boosting solar cellefficiencies by >2%.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 10, 'nm', 5],[43.0, 2, '%', 0],[141.0, 16.5, '%', 2],[153.0, 19.4, '%', 2],[175.0, 84, '%', 2]

Ti
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322417, 322417)
 This is >70 degC higher than achievable by currentmethods and results in more conductive TiOx films, boosting solar cellefficiencies by >2%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 10, 'nm', 5],[18.0, 2, '%', 0],[116.0, 16.5, '%', 2],[128.0, 19.4, '%', 2],[150.0, 84, '%', 2]

P
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322445, 322445)
 Likewise, when AP-CVD<missing VAR> SnOx (x<missing VAR>  2) is grown onperovskites, there is also minimal damage to the perovskite beneath.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 10, 'nm', 6],[10.0, 2, '%', 1],[88.0, 16.5, '%', 1],[100.0, 19.4, '%', 1],[122.0, 84, '%', 1]

CV
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322447, 322448)
 Likewise, when AP-CVD<missing VAR> SnOx (x<missing VAR>  2) is grown onperovskites, there is also minimal damage to the perovskite beneath.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 10, 'nm', 6],[12.0, 2, '%', 1],[85.0, 16.5, '%', 1],[97.0, 19.4, '%', 1],[119.0, 84, '%', 1]

Sn
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322451, 322451)
 Likewise, when AP-CVD<missing VAR> SnOx (x<missing VAR>  2) is grown onperovskites, there is also minimal damage to the perovskite beneath.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 10, 'nm', 6],[16.0, 2, '%', 1],[82.0, 16.5, '%', 1],[94.0, 19.4, '%', 1],[116.0, 84, '%', 1]

Sn
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322492, 322492)
 The SnOxlayer is pinhole-free and conformal, which reduces shunting in devices, andincreases steady-state efficiencies from 16.5% (no SnOx) to 19.4% (60 nm SnOx),with fill factors reaching 84%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 10, 'nm', 7],[57.0, 2, '%', 2],[41.0, 16.5, '%', 0],[53.0, 19.4, '%', 0],[75.0, 84, '%', 0]

Sn
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322539, 322539)
 The SnOxlayer is pinhole-free and conformal, which reduces shunting in devices, andincreases steady-state efficiencies from 16.5% (no SnOx) to 19.4% (60 nm SnOx),with fill factors reaching 84%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[415.0, 10, 'nm', 7],[104.0, 2, '%', 2],[6.0, 16.5, '%', 0],[6.0, 19.4, '%', 0],[28.0, 84, '%', 0]

Sn
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322553, 322553)
 The SnOxlayer is pinhole-free and conformal, which reduces shunting in devices, andincreases steady-state efficiencies from 16.5% (no SnOx) to 19.4% (60 nm SnOx),with fill factors reaching 84%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[429.0, 10, 'nm', 7],[118.0, 2, '%', 2],[20.0, 16.5, '%', 0],[8.0, 19.4, '%', 0],[14.0, 84, '%', 0]

P
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322578, 322578)
 This work shows AP-CVD<missing VAR> to be a versatiletechnique for growing oxides on thermally-sensitive materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[454.0, 10, 'nm', 8],[143.0, 2, '%', 3],[45.0, 16.5, '%', 1],[33.0, 19.4, '%', 1],[11.0, 84, '%', 1]

CV
###Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides|Ravi D. Raninga,Robert A. Jagt,Solène Béchu,Tahmida N. Huq,Mark Nikolka,Yen-Hung Lin,Mengyao Sun,Zewei Li,Wen Li,Muriel Bouttemy,Mathieu Frégnaux,Henry J. Snaith,Philip Schulz,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(322580, 322581)
 This work shows AP-CVD<missing VAR> to be a versatiletechnique for growing oxides on thermally-sensitive materials.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 10, 'nm', 8],[145.0, 2, '%', 3],[47.0, 16.5, '%', 1],[35.0, 19.4, '%', 1],[13.0, 84, '%', 1]

NaEr0.2Y0.8F4
###Modeling upconversion of erbium doped microcrystals based on experimentally determined Einstein coefficients|S. Fischer,H. Steinkemper,P. Löper,M. Hermle,J. C. Goldschmidt###
(322799, 322805)
 The input parameters for the model areexperimentally determined for the material system beta-NaEr0.2Y0.8F4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Excitonic States in Semiconducting Two-dimensional Perovskites|Alejandro Molina-Sánchez###
(323154, 323156)
 Recent experiments have synthesized ultra-thintwo-dimensional (2D) organic perovskites with optical properties similar tothose of 2D materials like monolayer MoS2 large exciton binding energy andexcitonic effects at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 0],[28.0, 2, 'D', 1],[200.0, 2, 'D', 4],[290.0, 2, 'D', 5],[306.0, 2, 'D', 6],[333.0, 600, 'meV', 6],[397.0, 2, 'D', 7]

In
###Excitonic States in Semiconducting Two-dimensional Perovskites|Alejandro Molina-Sánchez###
(323180, 323180)
 In addition, 2D perovskites aresynthesized with a simple fabrication process with potential low-cost andlarge-scale manufacture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'D', 1],[4.0, 2, 'D', 0],[176.0, 2, 'D', 3],[266.0, 2, 'D', 4],[282.0, 2, 'D', 5],[309.0, 600, 'meV', 5],[373.0, 2, 'D', 6]

In
###Excitonic States in Semiconducting Two-dimensional Perovskites|Alejandro Molina-Sánchez###
(323325, 323325)
 In this work, we define a simplifiedcrystal structure to calculate the optical properties of 2D perovskites,replacing the molecular cations with inorganic atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, 'D', 4],[141.0, 2, 'D', 3],[31.0, 2, 'D', 0],[121.0, 2, 'D', 1],[137.0, 2, 'D', 2],[164.0, 600, 'meV', 2],[228.0, 2, 'D', 3]

W
###Excitonic States in Semiconducting Two-dimensional Perovskites|Alejandro Molina-Sánchez###
(323416, 323416)
 We can thus applystate-of-the-art, parameter-free and predictive textitab initio methods likethe G<missing VAR>W method and the Bethe-Salpeter equation to obtain the excitonic states ofa model 2D perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 2, 'D', 5],[232.0, 2, 'D', 4],[60.0, 2, 'D', 1],[30.0, 2, 'D', 0],[46.0, 2, 'D', 1],[73.0, 600, 'meV', 1],[137.0, 2, 'D', 2]

(NiO)
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323616, 323619)
 We present research results on the electronic transport in heterostructuresbased on p<missing VAR>-type nickel oxide (NiO) with the n<missing VAR>-type oxide semiconductors zincoxide (ZnO) and cadmium oxide (CdO).
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(ZnO)
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323638, 323641)
 We present research results on the electronic transport in heterostructuresbased on p<missing VAR>-type nickel oxide (NiO) with the n<missing VAR>-type oxide semiconductors zincoxide (ZnO) and cadmium oxide (CdO).
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CdO)
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323649, 323652)
 We present research results on the electronic transport in heterostructuresbased on p<missing VAR>-type nickel oxide (NiO) with the n<missing VAR>-type oxide semiconductors zincoxide (ZnO) and cadmium oxide (CdO).
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323655, 323656)
 NiO is a desirable candidate forapplication in (opto-)electronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323742, 323742)
 However, because of its smallelectron affinity, heterojunctions with most n<missing VAR>-type oxide semiconductorsexhibit conduction and valence band offsets at the heterointerface in excess of1 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO/NiO
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323745, 323749)
 ZnO/NiO junctions exhibit a so called type-II band alignment, makingelectron-hole recombination the only process by which a current can verticallyflow through the structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

II
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323763, 323764)
 ZnO/NiO junctions exhibit a so called type-II band alignment, makingelectron-hole recombination the only process by which a current can verticallyflow through the structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UV
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323849, 323850)
 These heterojunctions are nevertheless shown to beof practical use in efficient optoelectronic devices, as exemplified here byour UV-converting transparent solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323901, 323902)
 These devices, although exhibitinghigh conversion efficiencies, suffer from two light-activated recombinationchannels connected to the type-II interface, one of which we identify andanalyse in more detail here.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdO/NiO
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323934, 323938)
 Furthermore, CdO/NiO contacts were studied - aheterostructure with even larger band offsets such that a type-III bandalignment is achieved.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

III
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(323971, 323973)
 Furthermore, CdO/NiO contacts were studied - aheterostructure with even larger band offsets such that a type-III bandalignment is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdO/NiO
###Nickel oxide-based heterostructures with large band offsets|Robert Karsthof,Holger von Wenckstern,Jesus Zuniga-Perez,Christiane Deparis,Marius Grundmann###
(324034, 324038)
We present experiments demonstrating that the CdO/NiO heterostructure indeedhosts a conductive layer absent in both materials when studied separately.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cs
###Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs)|Sayan Roy,Zixuan Hu,Sabre Kais,Peter Bermel###
(324118, 324118)
Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2, 'D', 4],[402.0, 35, '%', 7]

As
###Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs)|Sayan Roy,Zixuan Hu,Sabre Kais,Peter Bermel###
(324122, 324122)
 As several photovoltaic materials experimentally approach theShockley-Queisser limit, there has been a growing interest in unconventionalmaterials and approaches with the potential to cross this efficiency barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 2, 'D', 3],[398.0, 35, '%', 6]

Cs
###Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs)|Sayan Roy,Zixuan Hu,Sabre Kais,Peter Bermel###
(324295, 324295)
 Atomically thin 2D transition metal di-chalcogenides (TMDCs) haveshown great potential for use as ultra-thin photovoltaic materials in solarcells due to their favorable photon absorption and electronic transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'D', 0],[225.0, 35, '%', 3]

C
###Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs)|Sayan Roy,Zixuan Hu,Sabre Kais,Peter Bermel###
(324353, 324353)
 TMDC alloys exhibit tunable direct bandgaps and significant dipolemoments.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, 'D', 1],[167.0, 35, '%', 2]

In
###Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs)|Sayan Roy,Zixuan Hu,Sabre Kais,Peter Bermel###
(324375, 324375)
 In this work, we introduce the dark state protection mechanism to aTMDC based photovoltaic system with pure tungsten diselenide (WSe2) as theacceptor material and the TMDC alloy tungsten sulfo-selenide (WSeS) as thedonor material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2, 'D', 2],[145.0, 35, '%', 1]

C
###Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs)|Sayan Roy,Zixuan Hu,Sabre Kais,Peter Bermel###
(324404, 324404)
 In this work, we introduce the dark state protection mechanism to aTMDC based photovoltaic system with pure tungsten diselenide (WSe2) as theacceptor material and the TMDC alloy tungsten sulfo-selenide (WSeS) as thedonor material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'D', 2],[116.0, 35, '%', 1]

(WSe2)
###Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs)|Sayan Roy,Zixuan Hu,Sabre Kais,Peter Bermel###
(324420, 324424)
 In this work, we introduce the dark state protection mechanism to aTMDC based photovoltaic system with pure tungsten diselenide (WSe2) as theacceptor material and the TMDC alloy tungsten sulfo-selenide (WSeS) as thedonor material.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, 'D', 2],[96.0, 35, '%', 1]

C
###Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs)|Sayan Roy,Zixuan Hu,Sabre Kais,Peter Bermel###
(324442, 324442)
 In this work, we introduce the dark state protection mechanism to aTMDC based photovoltaic system with pure tungsten diselenide (WSe2) as theacceptor material and the TMDC alloy tungsten sulfo-selenide (WSeS) as thedonor material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, 'D', 2],[78.0, 35, '%', 1]

(WSeS)
###Enhancement of Photovoltaic Current Generation through Dark States in Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs)|Sayan Roy,Zixuan Hu,Sabre Kais,Peter Bermel###
(324452, 324456)
 In this work, we introduce the dark state protection mechanism to aTMDC based photovoltaic system with pure tungsten diselenide (WSe2) as theacceptor material and the TMDC alloy tungsten sulfo-selenide (WSeS) as thedonor material.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, 'D', 2],[64.0, 35, '%', 1]

(PSCs)
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324594, 324598)
 Perovskite solar cells (PSCs) with transparent electrodes can be integratedwith existing solar panels in tandem configurations to increase the powerconversion efficiency.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 2, 'cm', 3],[265.0, 95, '%', 3],[293.0, 0.2, 'eV', 3],[314.0, 16.7, '%', 4]

PSCs
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324653, 324655)
 A critical layer in semi-transparent PSCs is theinorganic buffer layer, which protects the PSC against damage when thetransparent electrode is sputtered on top.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 2, 'cm', 2],[208.0, 95, '%', 2],[236.0, 0.2, 'eV', 2],[257.0, 16.7, '%', 3]

PSC
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324675, 324677)
 A critical layer in semi-transparent PSCs is theinorganic buffer layer, which protects the PSC against damage when thetransparent electrode is sputtered on top.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, 'cm', 2],[186.0, 95, '%', 2],[214.0, 0.2, 'eV', 2],[235.0, 16.7, '%', 3]

PSCs
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324720, 324722)
 The development of n-i-p<missing VAR> structuredsemi-transparent PSCs has been hampered by the lack of suitable p<missing VAR>-type bufferlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, 'cm', 1],[141.0, 95, '%', 1],[169.0, 0.2, 'eV', 1],[190.0, 16.7, '%', 2]

In
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324750, 324750)
 In this work we develop a p<missing VAR>-type CuOx buffer layer, which can be grownuniformly over the perovskite device without damaging the perovskite or organiccharge transport layers, can be grown using industrially scalable techniquesand has high hole mobility (4.3 +/- 2 cm2 V-1 s<missing VAR>-1), high transmittance (>95%),and a suitable ionisation potential for hole extraction (5.3 +/- 0.2 eV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2, 'cm', 0],[113.0, 95, '%', 0],[141.0, 0.2, 'eV', 0],[162.0, 16.7, '%', 1]

Cu
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324766, 324766)
 In this work we develop a p<missing VAR>-type CuOx buffer layer, which can be grownuniformly over the perovskite device without damaging the perovskite or organiccharge transport layers, can be grown using industrially scalable techniquesand has high hole mobility (4.3 +/- 2 cm2 V-1 s<missing VAR>-1), high transmittance (>95%),and a suitable ionisation potential for hole extraction (5.3 +/- 0.2 eV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'cm', 0],[97.0, 95, '%', 0],[125.0, 0.2, 'eV', 0],[146.0, 16.7, '%', 1]

V
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324847, 324847)
 In this work we develop a p<missing VAR>-type CuOx buffer layer, which can be grownuniformly over the perovskite device without damaging the perovskite or organiccharge transport layers, can be grown using industrially scalable techniquesand has high hole mobility (4.3 +/- 2 cm2 V-1 s<missing VAR>-1), high transmittance (>95%),and a suitable ionisation potential for hole extraction (5.3 +/- 0.2 eV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, 'cm', 0],[16.0, 95, '%', 0],[44.0, 0.2, 'eV', 0],[65.0, 16.7, '%', 1]

PSCs
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324900, 324902)
Semi-transparent PSCs with efficiencies up to 16.7% are achieved using the CuOxbuffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'cm', 1],[37.0, 95, '%', 1],[9.0, 0.2, 'eV', 1],[10.0, 16.7, '%', 0]

Cu
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324923, 324923)
Semi-transparent PSCs with efficiencies up to 16.7% are achieved using the CuOxbuffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, 'cm', 1],[60.0, 95, '%', 1],[32.0, 0.2, 'eV', 1],[11.0, 16.7, '%', 0]

PSCs
###Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices|Robert A. Jagt,Tahmida N. Huq,Sam A. Hill,Maung Thway,Tianyuan Liu,Mari Napari,Bart Roose,Krzysztof Gałkowsk,Weiwei Li,Serena Fen Lin,Samuel D. Stranks,Judith L. MacManus-Driscoll,Robert L. Z. Hoye###
(324948, 324950)
 Our work demonstrates a new approach to integrate PSCs intotandem configurations, as well as enable the development of other devices thatneed high quality p<missing VAR>-type layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'cm', 2],[85.0, 95, '%', 2],[57.0, 0.2, 'eV', 2],[36.0, 16.7, '%', 1]

N2200
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325532, 325533)
Charge transfer via deep hole in the J<missing VAR>51/N2200 blend.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325538, 325538)
 In recently developed non-fullerene acceptor (NFA) based organic solar cells(OSCs), both the donor and acceptor parts can be excited by absorbing lightphotons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325551, 325552)
 In recently developed non-fullerene acceptor (NFA) based organic solar cells(OSCs), both the donor and acceptor parts can be excited by absorbing lightphotons.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325565, 325569)
 In recently developed non-fullerene acceptor (NFA) based organic solar cells(OSCs), both the donor and acceptor parts can be excited by absorbing lightphotons.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325645, 325646)
 Therefore, both electron transfer and hole transfer channels couldoccur at the donor/acceptor interface for generating free charge carriers inNFA based OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325651, 325653)
 Therefore, both electron transfer and hole transfer channels couldoccur at the donor/acceptor interface for generating free charge carriers inNFA based OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325668, 325668)
 However, in many molecular and D<missing VAR>NA systems, recent studiesrevealed the high charge transfer (CT) efficiency cannot be reasonablyexplained by a CT<missing VAR> model with only highest occupied molecular orbitals (HOM<missing VAR>Os)and lowest unoccupied molecular orbitals (LUMOs) of donor and acceptormolecules.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325690, 325690)
 However, in many molecular and D<missing VAR>NA systems, recent studiesrevealed the high charge transfer (CT) efficiency cannot be reasonablyexplained by a CT<missing VAR> model with only highest occupied molecular orbitals (HOM<missing VAR>Os)and lowest unoccupied molecular orbitals (LUMOs) of donor and acceptormolecules.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325709, 325709)
 However, in many molecular and D<missing VAR>NA systems, recent studiesrevealed the high charge transfer (CT) efficiency cannot be reasonablyexplained by a CT<missing VAR> model with only highest occupied molecular orbitals (HOM<missing VAR>Os)and lowest unoccupied molecular orbitals (LUMOs) of donor and acceptormolecules.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HO
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325727, 325728)
 However, in many molecular and D<missing VAR>NA systems, recent studiesrevealed the high charge transfer (CT) efficiency cannot be reasonablyexplained by a CT<missing VAR> model with only highest occupied molecular orbitals (HOM<missing VAR>Os)and lowest unoccupied molecular orbitals (LUMOs) of donor and acceptormolecules.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325730, 325730)
 However, in many molecular and D<missing VAR>NA systems, recent studiesrevealed the high charge transfer (CT) efficiency cannot be reasonablyexplained by a CT<missing VAR> model with only highest occupied molecular orbitals (HOM<missing VAR>Os)and lowest unoccupied molecular orbitals (LUMOs) of donor and acceptormolecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325748, 325748)
 However, in many molecular and D<missing VAR>NA systems, recent studiesrevealed the high charge transfer (CT) efficiency cannot be reasonablyexplained by a CT<missing VAR> model with only highest occupied molecular orbitals (HOM<missing VAR>Os)and lowest unoccupied molecular orbitals (LUMOs) of donor and acceptormolecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325763, 325763)
 In this work, taking an example of a full-polymer blend consistingof benzodithiophenealt-benzotriazole copolymers (J<missing VAR>51) as donor and naphthalenediimide-bithiophene (N2200) as acceptor, in which the ultrafast hole transferhas been recently reported, we investigate its CT<missing VAR> process and examine thedifferent roles of various frontier molecular orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(N2200)
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325815, 325818)
 In this work, taking an example of a full-polymer blend consistingof benzodithiophenealt-benzotriazole copolymers (J<missing VAR>51) as donor and naphthalenediimide-bithiophene (N2200) as acceptor, in which the ultrafast hole transferhas been recently reported, we investigate its CT<missing VAR> process and examine thedifferent roles of various frontier molecular orbitals.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325853, 325853)
 In this work, taking an example of a full-polymer blend consistingof benzodithiophenealt-benzotriazole copolymers (J<missing VAR>51) as donor and naphthalenediimide-bithiophene (N2200) as acceptor, in which the ultrafast hole transferhas been recently reported, we investigate its CT<missing VAR> process and examine thedifferent roles of various frontier molecular orbitals.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HO
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325923, 325924)
 Through a joint studyof quantum mechanics electronic structure calculation and nonadiabatic dynamicssimulation, we find the hole transfer between HOM<missing VAR>Os of J<missing VAR>51 and N2200 can hardlyhappen but the hole transfer from HOM<missing VAR>O of N2200 to HOM<missing VAR>O-1 of J<missing VAR>51 is much moreefficient.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325926, 325926)
 Through a joint studyof quantum mechanics electronic structure calculation and nonadiabatic dynamicssimulation, we find the hole transfer between HOM<missing VAR>Os of J<missing VAR>51 and N2200 can hardlyhappen but the hole transfer from HOM<missing VAR>O of N2200 to HOM<missing VAR>O-1 of J<missing VAR>51 is much moreefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N2200
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325935, 325936)
 Through a joint studyof quantum mechanics electronic structure calculation and nonadiabatic dynamicssimulation, we find the hole transfer between HOM<missing VAR>Os of J<missing VAR>51 and N2200 can hardlyhappen but the hole transfer from HOM<missing VAR>O of N2200 to HOM<missing VAR>O-1 of J<missing VAR>51 is much moreefficient.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HO
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325955, 325956)
 Through a joint studyof quantum mechanics electronic structure calculation and nonadiabatic dynamicssimulation, we find the hole transfer between HOM<missing VAR>Os of J<missing VAR>51 and N2200 can hardlyhappen but the hole transfer from HOM<missing VAR>O of N2200 to HOM<missing VAR>O-1 of J<missing VAR>51 is much moreefficient.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325958, 325958)
 Through a joint studyof quantum mechanics electronic structure calculation and nonadiabatic dynamicssimulation, we find the hole transfer between HOM<missing VAR>Os of J<missing VAR>51 and N2200 can hardlyhappen but the hole transfer from HOM<missing VAR>O of N2200 to HOM<missing VAR>O-1 of J<missing VAR>51 is much moreefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N2200
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325962, 325963)
 Through a joint studyof quantum mechanics electronic structure calculation and nonadiabatic dynamicssimulation, we find the hole transfer between HOM<missing VAR>Os of J<missing VAR>51 and N2200 can hardlyhappen but the hole transfer from HOM<missing VAR>O of N2200 to HOM<missing VAR>O-1 of J<missing VAR>51 is much moreefficient.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HO
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325967, 325968)
 Through a joint studyof quantum mechanics electronic structure calculation and nonadiabatic dynamicssimulation, we find the hole transfer between HOM<missing VAR>Os of J<missing VAR>51 and N2200 can hardlyhappen but the hole transfer from HOM<missing VAR>O of N2200 to HOM<missing VAR>O-1 of J<missing VAR>51 is much moreefficient.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(325970, 325970)
 Through a joint studyof quantum mechanics electronic structure calculation and nonadiabatic dynamicssimulation, we find the hole transfer between HOM<missing VAR>Os of J<missing VAR>51 and N2200 can hardlyhappen but the hole transfer from HOM<missing VAR>O of N2200 to HOM<missing VAR>O-1 of J<missing VAR>51 is much moreefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(326011, 326011)
 This points out the underlying importance of deep hole channel in CT<missing VAR>process and indicates that including frontier molecular orbitals (FM<missing VAR>Os) otherthan HOM<missing VAR>Os and LUMOs is highly necessary to build a robust physical model forstudying CT<missing VAR> process in molecular optoelectronic materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(326032, 326032)
 This points out the underlying importance of deep hole channel in CT<missing VAR>process and indicates that including frontier molecular orbitals (FM<missing VAR>Os) otherthan HOM<missing VAR>Os and LUMOs is highly necessary to build a robust physical model forstudying CT<missing VAR> process in molecular optoelectronic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(326034, 326034)
 This points out the underlying importance of deep hole channel in CT<missing VAR>process and indicates that including frontier molecular orbitals (FM<missing VAR>Os) otherthan HOM<missing VAR>Os and LUMOs is highly necessary to build a robust physical model forstudying CT<missing VAR> process in molecular optoelectronic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HO
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(326042, 326043)
 This points out the underlying importance of deep hole channel in CT<missing VAR>process and indicates that including frontier molecular orbitals (FM<missing VAR>Os) otherthan HOM<missing VAR>Os and LUMOs is highly necessary to build a robust physical model forstudying CT<missing VAR> process in molecular optoelectronic materials.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(326045, 326045)
 This points out the underlying importance of deep hole channel in CT<missing VAR>process and indicates that including frontier molecular orbitals (FM<missing VAR>Os) otherthan HOM<missing VAR>Os and LUMOs is highly necessary to build a robust physical model forstudying CT<missing VAR> process in molecular optoelectronic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(326052, 326052)
 This points out the underlying importance of deep hole channel in CT<missing VAR>process and indicates that including frontier molecular orbitals (FM<missing VAR>Os) otherthan HOM<missing VAR>Os and LUMOs is highly necessary to build a robust physical model forstudying CT<missing VAR> process in molecular optoelectronic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Charge transfer via deep hole in the J51/N2200 blend|Xiaoyu Xie,Chunfeng Zhang,Haibo Ma###
(326077, 326077)
 This points out the underlying importance of deep hole channel in CT<missing VAR>process and indicates that including frontier molecular orbitals (FM<missing VAR>Os) otherthan HOM<missing VAR>Os and LUMOs is highly necessary to build a robust physical model forstudying CT<missing VAR> process in molecular optoelectronic materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326777, 326777)
 Here we report theexperimental realization of a zipper-like interdigitated interface between aPb-based halide perovskite light absorber and an oxide ETL by the PbO cappingof the ETL surface, which produces an atomically thin two-dimensional metalliclayer that can significantly enhance the perovskite/ETL charge extractionprocess.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbO
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326803, 326804)
 Here we report theexperimental realization of a zipper-like interdigitated interface between aPb-based halide perovskite light absorber and an oxide ETL by the PbO cappingof the ETL surface, which produces an atomically thin two-dimensional metalliclayer that can significantly enhance the perovskite/ETL charge extractionprocess.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326863, 326863)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3/TiO2
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326904, 326910)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326937, 326937)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326941, 326941)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326950, 326950)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326952, 326952)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326954, 326954)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326963, 326965)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326970, 326971)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326980, 326980)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(326982, 326982)
 As the atomistic origin of the emergent two-dimensional interfacialmetallicity, first-principles calculations performed on the representativeM<missing VAR>APbI3/TiO2 interface identify the interfacial strain induced by thesimultaneous formation of stretched I-substitutional Pb bonds (and thus Pb-I-Pbbonds bridging M<missing VAR>APbI3 and TiO2) and contracted substitutional Pb-O bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbO
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(327067, 327068)
 It isexperimentally demonstrated that the PbO capping method is generally applicableto other ETL materials including ZnO and SrTiO3, and that the zipper-likeinterdigitated metallic interface leads to about two-fold increase in chargeextraction rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(327093, 327094)
 It isexperimentally demonstrated that the PbO capping method is generally applicableto other ETL materials including ZnO and SrTiO3, and that the zipper-likeinterdigitated metallic interface leads to about two-fold increase in chargeextraction rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(327098, 327101)
 It isexperimentally demonstrated that the PbO capping method is generally applicableto other ETL materials including ZnO and SrTiO3, and that the zipper-likeinterdigitated metallic interface leads to about two-fold increase in chargeextraction rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbO
###Strain-induced metallization and defect suppression at zipper-like interdigitated atomically thin interfaces enabling high-efficiency halide perovskite solar cells|Nikolai Tsvetkov,Byeong Cheul Moon,Jeung Ku Kang,Muhammad Ejaz Khan,Yong-Hoon Kim###
(327191, 327192)
 Finally, in terms of the photovoltaic efficiency, we observe avolcano-type behavior with the highest performance achieved at themonolayer-level PbO capping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPbI3
###Atomistic insights into the degradation of halide perovskites: a reactive force field molecular dynamics study|Mike Pols,José Manuel Vicent-Luna,Ivo Filot,Adri C. T. van Duin,Shuxia Tao###
(327446, 327449)
 Here, wepresent the first effort in developing reactive force fields for large scalemolecular dynamics simulations of the phase instability and the defect-induceddegradation reactions in inorganic CsPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Atomistic insights into the degradation of halide perovskites: a reactive force field molecular dynamics study|Mike Pols,José Manuel Vicent-Luna,Ivo Filot,Adri C. T. van Duin,Shuxia Tao###
(327499, 327499)
 At relatively low temperatures, the Cscations tend to move away from the preferential positions with good contactswith the surrounding metal halide framework, potentially causing its conversionto a non-perovskite phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Atomistic insights into the degradation of halide perovskites: a reactive force field molecular dynamics study|Mike Pols,José Manuel Vicent-Luna,Ivo Filot,Adri C. T. van Duin,Shuxia Tao###
(327510, 327510)
 At relatively low temperatures, the Cscations tend to move away from the preferential positions with good contactswith the surrounding metal halide framework, potentially causing its conversionto a non-perovskite phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###Atomistic insights into the degradation of halide perovskites: a reactive force field molecular dynamics study|Mike Pols,José Manuel Vicent-Luna,Ivo Filot,Adri C. T. van Duin,Shuxia Tao###
(327649, 327651)
 Our simulations of defective structures reveal that,although both iodine vacancies and interstitials are very mobile in theperovskite lattice, the vacancies have a detrimental effect on the stability,initiating the decomposition reactions of perovskites to PbI2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Atomistic insights into the degradation of halide perovskites: a reactive force field molecular dynamics study|Mike Pols,José Manuel Vicent-Luna,Ivo Filot,Adri C. T. van Duin,Shuxia Tao###
(327662, 327663)
 Our workputs ReaxFF forward as an effective computational framework to study reactiveprocesses in halide perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PV)
###Thermal Management of Photovoltaics using Porous Nanochannels|Sajag Poudel,An Zou,Shalabh C. Maroo###
(327762, 327765)
 When the solar radiation is incident on the photovoltaics (PV)panel, a large portion of it is absorbed by the underlying material whichincreases its internal energy leading to the generation of heat.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 31.5, 'oC', 5],[364.0, 33, '%', 6]

PV
###Thermal Management of Photovoltaics using Porous Nanochannels|Sajag Poudel,An Zou,Shalabh C. Maroo###
(327822, 327823)
 An overheatedPV panel results in a decline in its performance which calls for an efficientcooling mechanism that can offer an optimum output of the electrical power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 31.5, 'oC', 4],[306.0, 33, '%', 5]

In
###Thermal Management of Photovoltaics using Porous Nanochannels|Sajag Poudel,An Zou,Shalabh C. Maroo###
(327877, 327877)
 Inthe present numerical work, thermal management with a porous nanochannelsdevice capable to dissipate high heat flux is employed to regulate thetemperature of a commercial PV panel by integrating the device on the back faceof the panel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 31.5, 'oC', 3],[252.0, 33, '%', 4]

PV
###Thermal Management of Photovoltaics using Porous Nanochannels|Sajag Poudel,An Zou,Shalabh C. Maroo###
(327935, 327936)
 Inthe present numerical work, thermal management with a porous nanochannelsdevice capable to dissipate high heat flux is employed to regulate thetemperature of a commercial PV panel by integrating the device on the back faceof the panel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 31.5, 'oC', 3],[193.0, 33, '%', 4]

PV
###Thermal Management of Photovoltaics using Porous Nanochannels|Sajag Poudel,An Zou,Shalabh C. Maroo###
(327978, 327979)
 The spatial and temporal variation of the PV surface temperatureis obtained by solving the energy balance equation numerically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 31.5, 'oC', 2],[150.0, 33, '%', 3]

PV
###Thermal Management of Photovoltaics using Porous Nanochannels|Sajag Poudel,An Zou,Shalabh C. Maroo###
(328016, 328017)
 By evaluatingthe steady-state PV surface temperature with and without thermal management,the extent of cooling and the resulting enhancement in the electrical poweroutput is studied in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 31.5, 'oC', 1],[112.0, 33, '%', 2]

PV
###Thermal Management of Photovoltaics using Porous Nanochannels|Sajag Poudel,An Zou,Shalabh C. Maroo###
(328087, 328088)
 The nanochannels device is found to reduce the PVsurface temperature significantly with an average cooling of 31.5 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 31.5, 'oC', 0],[41.0, 33, '%', 1]

PV
###Thermal Management of Photovoltaics using Porous Nanochannels|Sajag Poudel,An Zou,Shalabh C. Maroo###
(328216, 328217)
 Furthermore, the numerical methodis used to develop a universal curve which can predict the extent of PV coolingfor any generic thermal management device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 31.5, 'oC', 2],[87.0, 33, '%', 1]

U
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328281, 328281)
 Upgraded metallurgical grade (UMG) silicon (Si) has raised interest as analternative material for solar cells due to its low cost, low environmentalimpact and low CAPEX.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[492.0, 140, 'us', 7]

(Si)
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328288, 328290)
 Upgraded metallurgical grade (UMG) silicon (Si) has raised interest as analternative material for solar cells due to its low cost, low environmentalimpact and low CAPEX.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[483.0, 140, 'us', 7]

C
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328335, 328335)
 Upgraded metallurgical grade (UMG) silicon (Si) has raised interest as analternative material for solar cells due to its low cost, low environmentalimpact and low CAPEX.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 140, 'us', 7]

P
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328337, 328337)
 Upgraded metallurgical grade (UMG) silicon (Si) has raised interest as analternative material for solar cells due to its low cost, low environmentalimpact and low CAPEX.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 140, 'us', 7]

Si
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328369, 328369)
 Maximum cell efficiencies at the level of those obtainedfrom high purity poly-Si have been reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 140, 'us', 6]

U
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328404, 328404)
 However, a higher defect densityand the compensated doping character result in UMG-based cell efficienciesvarying over wider ranges in frequency distribution charts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 140, 'us', 5]

In
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328432, 328432)
 In this report wecharacterize mc-Si UMG samples with different defect densities, comparing themwith mono-Si UMG and commercial high-performance mc-Si samples, analysing theimpact of carrier trapping by means of photoconductance (PC) decaymeasurements, and its evolution after applying a phosphorous diffusiongettering (PDG) process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 140, 'us', 4]

Si
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328445, 328445)
 In this report wecharacterize mc-Si UMG samples with different defect densities, comparing themwith mono-Si UMG and commercial high-performance mc-Si samples, analysing theimpact of carrier trapping by means of photoconductance (PC) decaymeasurements, and its evolution after applying a phosphorous diffusiongettering (PDG) process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 140, 'us', 4]

U
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328447, 328447)
 In this report wecharacterize mc-Si UMG samples with different defect densities, comparing themwith mono-Si UMG and commercial high-performance mc-Si samples, analysing theimpact of carrier trapping by means of photoconductance (PC) decaymeasurements, and its evolution after applying a phosphorous diffusiongettering (PDG) process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 140, 'us', 4]

Si
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328471, 328471)
 In this report wecharacterize mc-Si UMG samples with different defect densities, comparing themwith mono-Si UMG and commercial high-performance mc-Si samples, analysing theimpact of carrier trapping by means of photoconductance (PC) decaymeasurements, and its evolution after applying a phosphorous diffusiongettering (PDG) process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 140, 'us', 4]

U
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328473, 328473)
 In this report wecharacterize mc-Si UMG samples with different defect densities, comparing themwith mono-Si UMG and commercial high-performance mc-Si samples, analysing theimpact of carrier trapping by means of photoconductance (PC) decaymeasurements, and its evolution after applying a phosphorous diffusiongettering (PDG) process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 140, 'us', 4]

Si
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328487, 328487)
 In this report wecharacterize mc-Si UMG samples with different defect densities, comparing themwith mono-Si UMG and commercial high-performance mc-Si samples, analysing theimpact of carrier trapping by means of photoconductance (PC) decaymeasurements, and its evolution after applying a phosphorous diffusiongettering (PDG) process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 140, 'us', 4]

(PC)
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328513, 328516)
 In this report wecharacterize mc-Si UMG samples with different defect densities, comparing themwith mono-Si UMG and commercial high-performance mc-Si samples, analysing theimpact of carrier trapping by means of photoconductance (PC) decaymeasurements, and its evolution after applying a phosphorous diffusiongettering (PDG) process.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 140, 'us', 4]

P
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328544, 328544)
 In this report wecharacterize mc-Si UMG samples with different defect densities, comparing themwith mono-Si UMG and commercial high-performance mc-Si samples, analysing theimpact of carrier trapping by means of photoconductance (PC) decaymeasurements, and its evolution after applying a phosphorous diffusiongettering (PDG) process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 140, 'us', 4]

PC
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328568, 328569)
 When analyzing the decay time constant of the PCmeasurements, slow (66.8+-14.3 ms) and fast (16.1+-3.5 ms) traps are found inmc-Si samples, while no evidence of trapping is found in mono-UMG samples.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 140, 'us', 3]

Si
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328610, 328610)
 When analyzing the decay time constant of the PCmeasurements, slow (66.8+-14.3 ms) and fast (16.1+-3.5 ms) traps are found inmc-Si samples, while no evidence of trapping is found in mono-UMG samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 140, 'us', 3]

U
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328633, 328633)
 When analyzing the decay time constant of the PCmeasurements, slow (66.8+-14.3 ms) and fast (16.1+-3.5 ms) traps are found inmc-Si samples, while no evidence of trapping is found in mono-UMG samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 140, 'us', 3]

P
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328655, 328655)
 Slowtraps are effectively removed after the PDG process, while fast traps doremain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 140, 'us', 2]

F
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328713, 328713)
 The influence of dislocations clusters and the possible role of oxygen,as revealed by Fourier-transform infrared spectroscopy (FTIR) is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 140, 'us', 1]

P
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328746, 328746)
Finally, the improvement in minority carrier lifetime due to the PDG treatmentis reported for each sample type, reaching values up to 140 us in mc-Si sampleswith no slow traps neither interstitial oxygen FTIR-peaks<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 140, 'us', 0]

Si
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328779, 328779)
Finally, the improvement in minority carrier lifetime due to the PDG treatmentis reported for each sample type, reaching values up to 140 us in mc-Si sampleswith no slow traps neither interstitial oxygen FTIR-peaks<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 140, 'us', 0]

F
###Reduction of Trapping and Recombination in Upgraded Metallurgical Grade Silicon: Impact of Phosphorous Diffusion Gettering|N. Dasilva-Villanueva,S. Catalán-Gómez,D. Fuertes Marrón,J. J. Torres,M. García-Corpas,C. del Cañizo###
(328798, 328798)
Finally, the improvement in minority carrier lifetime due to the PDG treatmentis reported for each sample type, reaching values up to 140 us in mc-Si sampleswith no slow traps neither interstitial oxygen FTIR-peaks<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 140, 'us', 0]

(OSCs)
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(328854, 328858)
 Organic solar cells (OSCs) have recently shown a rapid improvement in theirperformance, bringing power conversion efficiencies (PCEs) closer to the pointwhere commercial applications of the technology become viable.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 20, '%', 1]

(PCEs)
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(328888, 328892)
 Organic solar cells (OSCs) have recently shown a rapid improvement in theirperformance, bringing power conversion efficiencies (PCEs) closer to the pointwhere commercial applications of the technology become viable.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[75.0, 20, '%', 1]

OSCs
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(328940, 328942)
 However, the lowopen-circuit voltage (Voc) of OSCs relative to their optical gap still limitsPCEs to below 20%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 20, '%', 0]

PCEs
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(328959, 328961)
 However, the lowopen-circuit voltage (Voc) of OSCs relative to their optical gap still limitsPCEs to below 20%.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[6.0, 20, '%', 0]

OSCs
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(328991, 328993)
 A key factor contributing to the large Voc deficit in OSCsis non-radiative recombination to spin-triplet excitons, which is widely, butnot universally, observed in blends using both fullerene and non-fullereneelectron acceptors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 20, '%', 1]

P
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(329127, 329127)
 We apply our methodology totwo well-studied polymerfullerene systems, PM<missing VAR>6PC60BM<missing VAR> and PT<missing VAR>B7-ThPC60BM<missing VAR>,enabling us to selectively investigate distinct triplet formation pathways.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 20, '%', 3]

PC60B
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(329130, 329133)
 We apply our methodology totwo well-studied polymerfullerene systems, PM<missing VAR>6PC60BM<missing VAR> and PT<missing VAR>B7-ThPC60BM<missing VAR>,enabling us to selectively investigate distinct triplet formation pathways.
Featurization terminated normally.
0,0,0,0,0.016129032258064516,0.967741935483871,0,0,0,0,0,0,0,0,0.016129032258064516,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 20, '%', 3]

P
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(329138, 329138)
 We apply our methodology totwo well-studied polymerfullerene systems, PM<missing VAR>6PC60BM<missing VAR> and PT<missing VAR>B7-ThPC60BM<missing VAR>,enabling us to selectively investigate distinct triplet formation pathways.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 20, '%', 3]

B7
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(329140, 329141)
 We apply our methodology totwo well-studied polymerfullerene systems, PM<missing VAR>6PC60BM<missing VAR> and PT<missing VAR>B7-ThPC60BM<missing VAR>,enabling us to selectively investigate distinct triplet formation pathways.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 20, '%', 3]

ThPC60B
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(329143, 329147)
 We apply our methodology totwo well-studied polymerfullerene systems, PM<missing VAR>6PC60BM<missing VAR> and PT<missing VAR>B7-ThPC60BM<missing VAR>,enabling us to selectively investigate distinct triplet formation pathways.
Featurization terminated normally.
0,0,0,0,0.015873015873015872,0.9523809523809523,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 20, '%', 3]

In
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(329171, 329171)
 Incontrast to the more efficient non-fullerene acceptor systems that show onlytriplet states formed via non-geminate recombination, the fullerene systemsalso show significant triplet formation via geminate processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 20, '%', 4]

OSC
###Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells|Alberto Privitera,Jeannine Grune,Akchheta Karki,William K. Myers,Vladimir Dyakonov,Thuc-Quyen Nguyen,Moritz K. Riede,Richard H. Friend,Andreas Sperlich,Alexander J. Gillett###
(329332, 329334)
 Thus, our model study demonstrates howthese complex and overlapping processes can be successfully deconvoluted toreveal the intricacies of triplet generation dynamics in OSC blends.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 20, '%', 6]

Ge
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329351, 329351)
Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VOC
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329384, 329386)
 To reduce the prominent VOC-deficit that limits kesterite-based solar cellsefficiencies, Ge has been proposed over the recent years with encouragingresults, as the reduction of the non-radiative recombination rate is consideredas a way to improve the well-known Sn-kesterite world record efficiency.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329406, 329406)
 To reduce the prominent VOC-deficit that limits kesterite-based solar cellsefficiencies, Ge has been proposed over the recent years with encouragingresults, as the reduction of the non-radiative recombination rate is consideredas a way to improve the well-known Sn-kesterite world record efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329469, 329469)
 To reduce the prominent VOC-deficit that limits kesterite-based solar cellsefficiencies, Ge has been proposed over the recent years with encouragingresults, as the reduction of the non-radiative recombination rate is consideredas a way to improve the well-known Sn-kesterite world record efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329519, 329519)
 Togain further insight into this mechanism, we investigate the physical behaviourof intrinsic point defects both upon Ge doping and alloying of Cu2ZnSnS4kesterite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329529, 329534)
 Togain further insight into this mechanism, we investigate the physical behaviourof intrinsic point defects both upon Ge doping and alloying of Cu2ZnSnS4kesterite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329568, 329573)
 Using a first-principles approach, we confirm the p<missing VAR>-typeconductivity of both Cu2ZnSnS4 and Cu2ZnGeS4, attributed to the low formationenergies of the VCu and CuZn acceptor defects within the whole stable phasediagram range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnGeS4
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329577, 329582)
 Using a first-principles approach, we confirm the p<missing VAR>-typeconductivity of both Cu2ZnSnS4 and Cu2ZnGeS4, attributed to the low formationenergies of the VCu and CuZn acceptor defects within the whole stable phasediagram range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VCu
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329602, 329603)
 Using a first-principles approach, we confirm the p<missing VAR>-typeconductivity of both Cu2ZnSnS4 and Cu2ZnGeS4, attributed to the low formationenergies of the VCu and CuZn acceptor defects within the whole stable phasediagram range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuZn
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329607, 329608)
 Using a first-principles approach, we confirm the p<missing VAR>-typeconductivity of both Cu2ZnSnS4 and Cu2ZnGeS4, attributed to the low formationenergies of the VCu and CuZn acceptor defects within the whole stable phasediagram range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329638, 329638)
 Via doping of the Sn-kesterite matrix, we report the lowestformation energy for the substitutional defect GeSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeSn
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329666, 329667)
 Via doping of the Sn-kesterite matrix, we report the lowestformation energy for the substitutional defect GeSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329692, 329692)
 We also confirm thedetrimental role of the substitutional defects X<missing VAR>Zn (X<missing VAR>Sn,Ge) acting asrecombination centres within the Sn-based, the Ge-doped and the Ge-basedkesterite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329696, 329696)
 We also confirm thedetrimental role of the substitutional defects X<missing VAR>Zn (X<missing VAR>Sn,Ge) acting asrecombination centres within the Sn-based, the Ge-doped and the Ge-basedkesterite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329698, 329698)
 We also confirm thedetrimental role of the substitutional defects X<missing VAR>Zn (X<missing VAR>Sn,Ge) acting asrecombination centres within the Sn-based, the Ge-doped and the Ge-basedkesterite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329714, 329714)
 We also confirm thedetrimental role of the substitutional defects X<missing VAR>Zn (X<missing VAR>Sn,Ge) acting asrecombination centres within the Sn-based, the Ge-doped and the Ge-basedkesterite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329721, 329721)
 We also confirm thedetrimental role of the substitutional defects X<missing VAR>Zn (X<missing VAR>Sn,Ge) acting asrecombination centres within the Sn-based, the Ge-doped and the Ge-basedkesterite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329729, 329729)
 We also confirm thedetrimental role of the substitutional defects X<missing VAR>Zn (X<missing VAR>Sn,Ge) acting asrecombination centres within the Sn-based, the Ge-doped and the Ge-basedkesterite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite|Thomas Ratz,Ngoc Duy Nguyen,Guy Brammertz,Bart Vermang,Jean-Yves Raty###
(329759, 329759)
 Finally, we highlight the reduction of the lattice distortion uponGe incorporation resulting in a reduction of the carrier capture cross sectionand consequently a decrease of the non-radiative recombination rate within thebulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs2TiBr6
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329832, 329836)
Investigating the theoretical performance of Cs2TiBr6-based perovskite solar cell with La-doped BaSnO3 and CuSbS2 as the charge transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 1.6, 'eV', 4],[327.0, 1000, 'nm', 6],[329.0, 1013, 'cm', 6],[330.0, -3, ',', 6],[335.0, 1.4, 'eV', 6],[372.0, 400, 'nm', 7],[384.0, -1, ',', 7],[389.0, 4.1, 'eV', 7],[460.0, 1015, ',', 9],[463.0, 1020, ',', 9],[467.0, 1021, 'cm', 9],[468.0, -3, ',', 9],[622.0, 5.9, 'eV', 12],[625.0, 300, 'K', 12],[657.0, 29.13, '%', 13]

La
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329848, 329848)
Investigating the theoretical performance of Cs2TiBr6-based perovskite solar cell with La-doped BaSnO3 and CuSbS2 as the charge transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 1.6, 'eV', 4],[315.0, 1000, 'nm', 6],[317.0, 1013, 'cm', 6],[318.0, -3, ',', 6],[323.0, 1.4, 'eV', 6],[360.0, 400, 'nm', 7],[372.0, -1, ',', 7],[377.0, 4.1, 'eV', 7],[448.0, 1015, ',', 9],[451.0, 1020, ',', 9],[455.0, 1021, 'cm', 9],[456.0, -3, ',', 9],[610.0, 5.9, 'eV', 12],[613.0, 300, 'K', 12],[645.0, 29.13, '%', 13]

BaSnO3
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329852, 329855)
Investigating the theoretical performance of Cs2TiBr6-based perovskite solar cell with La-doped BaSnO3 and CuSbS2 as the charge transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 1.6, 'eV', 4],[308.0, 1000, 'nm', 6],[310.0, 1013, 'cm', 6],[311.0, -3, ',', 6],[316.0, 1.4, 'eV', 6],[353.0, 400, 'nm', 7],[365.0, -1, ',', 7],[370.0, 4.1, 'eV', 7],[441.0, 1015, ',', 9],[444.0, 1020, ',', 9],[448.0, 1021, 'cm', 9],[449.0, -3, ',', 9],[603.0, 5.9, 'eV', 12],[606.0, 300, 'K', 12],[638.0, 29.13, '%', 13]

CuSbS2
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329859, 329862)
Investigating the theoretical performance of Cs2TiBr6-based perovskite solar cell with La-doped BaSnO3 and CuSbS2 as the charge transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 1.6, 'eV', 4],[301.0, 1000, 'nm', 6],[303.0, 1013, 'cm', 6],[304.0, -3, ',', 6],[309.0, 1.4, 'eV', 6],[346.0, 400, 'nm', 7],[358.0, -1, ',', 7],[363.0, 4.1, 'eV', 7],[434.0, 1015, ',', 9],[437.0, 1020, ',', 9],[441.0, 1021, 'cm', 9],[442.0, -3, ',', 9],[596.0, 5.9, 'eV', 12],[599.0, 300, 'K', 12],[631.0, 29.13, '%', 13]

Cs2TiBr6
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329893, 329897)
 A lead-free, completely inorganic, and non-toxic Cs2TiBr6-based doubleperovskite solar cell (PSC) was simulated via SCAPS 1-D<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 1.6, 'eV', 3],[266.0, 1000, 'nm', 5],[268.0, 1013, 'cm', 5],[269.0, -3, ',', 5],[274.0, 1.4, 'eV', 5],[311.0, 400, 'nm', 6],[323.0, -1, ',', 6],[328.0, 4.1, 'eV', 6],[399.0, 1015, ',', 8],[402.0, 1020, ',', 8],[406.0, 1021, 'cm', 8],[407.0, -3, ',', 8],[561.0, 5.9, 'eV', 11],[564.0, 300, 'K', 11],[596.0, 29.13, '%', 12]

(PSC)
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329910, 329914)
 A lead-free, completely inorganic, and non-toxic Cs2TiBr6-based doubleperovskite solar cell (PSC) was simulated via SCAPS 1-D<missing VAR>.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 1.6, 'eV', 3],[249.0, 1000, 'nm', 5],[251.0, 1013, 'cm', 5],[252.0, -3, ',', 5],[257.0, 1.4, 'eV', 5],[294.0, 400, 'nm', 6],[306.0, -1, ',', 6],[311.0, 4.1, 'eV', 6],[382.0, 1015, ',', 8],[385.0, 1020, ',', 8],[389.0, 1021, 'cm', 8],[390.0, -3, ',', 8],[544.0, 5.9, 'eV', 11],[547.0, 300, 'K', 11],[579.0, 29.13, '%', 12]

SC
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329922, 329923)
 A lead-free, completely inorganic, and non-toxic Cs2TiBr6-based doubleperovskite solar cell (PSC) was simulated via SCAPS 1-D<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 1.6, 'eV', 3],[240.0, 1000, 'nm', 5],[242.0, 1013, 'cm', 5],[243.0, -3, ',', 5],[248.0, 1.4, 'eV', 5],[285.0, 400, 'nm', 6],[297.0, -1, ',', 6],[302.0, 4.1, 'eV', 6],[373.0, 1015, ',', 8],[376.0, 1020, ',', 8],[380.0, 1021, 'cm', 8],[381.0, -3, ',', 8],[535.0, 5.9, 'eV', 11],[538.0, 300, 'K', 11],[570.0, 29.13, '%', 12]

PS
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329925, 329926)
 A lead-free, completely inorganic, and non-toxic Cs2TiBr6-based doubleperovskite solar cell (PSC) was simulated via SCAPS 1-D<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1.6, 'eV', 3],[237.0, 1000, 'nm', 5],[239.0, 1013, 'cm', 5],[240.0, -3, ',', 5],[245.0, 1.4, 'eV', 5],[282.0, 400, 'nm', 6],[294.0, -1, ',', 6],[299.0, 4.1, 'eV', 6],[370.0, 1015, ',', 8],[373.0, 1020, ',', 8],[377.0, 1021, 'cm', 8],[378.0, -3, ',', 8],[532.0, 5.9, 'eV', 11],[535.0, 300, 'K', 11],[567.0, 29.13, '%', 12]

La
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329933, 329933)
 La-doped BaSnO3 (L<missing VAR>BSO)was applied as the electron transport layer (ETL) unprecedentedly in thesimulation study of PSCs, while CuSbS2 was utilized as the hole transport layer(HTL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1.6, 'eV', 2],[230.0, 1000, 'nm', 4],[232.0, 1013, 'cm', 4],[233.0, -3, ',', 4],[238.0, 1.4, 'eV', 4],[275.0, 400, 'nm', 5],[287.0, -1, ',', 5],[292.0, 4.1, 'eV', 5],[363.0, 1015, ',', 7],[366.0, 1020, ',', 7],[370.0, 1021, 'cm', 7],[371.0, -3, ',', 7],[525.0, 5.9, 'eV', 10],[528.0, 300, 'K', 10],[560.0, 29.13, '%', 11]

BaSnO3
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329937, 329940)
 La-doped BaSnO3 (L<missing VAR>BSO)was applied as the electron transport layer (ETL) unprecedentedly in thesimulation study of PSCs, while CuSbS2 was utilized as the hole transport layer(HTL).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1.6, 'eV', 2],[223.0, 1000, 'nm', 4],[225.0, 1013, 'cm', 4],[226.0, -3, ',', 4],[231.0, 1.4, 'eV', 4],[268.0, 400, 'nm', 5],[280.0, -1, ',', 5],[285.0, 4.1, 'eV', 5],[356.0, 1015, ',', 7],[359.0, 1020, ',', 7],[363.0, 1021, 'cm', 7],[364.0, -3, ',', 7],[518.0, 5.9, 'eV', 10],[521.0, 300, 'K', 10],[553.0, 29.13, '%', 11]

O
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329946, 329946)
 La-doped BaSnO3 (L<missing VAR>BSO)was applied as the electron transport layer (ETL) unprecedentedly in thesimulation study of PSCs, while CuSbS2 was utilized as the hole transport layer(HTL).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1.6, 'eV', 2],[217.0, 1000, 'nm', 4],[219.0, 1013, 'cm', 4],[220.0, -3, ',', 4],[225.0, 1.4, 'eV', 4],[262.0, 400, 'nm', 5],[274.0, -1, ',', 5],[279.0, 4.1, 'eV', 5],[350.0, 1015, ',', 7],[353.0, 1020, ',', 7],[357.0, 1021, 'cm', 7],[358.0, -3, ',', 7],[512.0, 5.9, 'eV', 10],[515.0, 300, 'K', 10],[547.0, 29.13, '%', 11]

PSCs
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329983, 329985)
 La-doped BaSnO3 (L<missing VAR>BSO)was applied as the electron transport layer (ETL) unprecedentedly in thesimulation study of PSCs, while CuSbS2 was utilized as the hole transport layer(HTL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1.6, 'eV', 2],[178.0, 1000, 'nm', 4],[180.0, 1013, 'cm', 4],[181.0, -3, ',', 4],[186.0, 1.4, 'eV', 4],[223.0, 400, 'nm', 5],[235.0, -1, ',', 5],[240.0, 4.1, 'eV', 5],[311.0, 1015, ',', 7],[314.0, 1020, ',', 7],[318.0, 1021, 'cm', 7],[319.0, -3, ',', 7],[473.0, 5.9, 'eV', 10],[476.0, 300, 'K', 10],[508.0, 29.13, '%', 11]

CuSbS2
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(329990, 329993)
 La-doped BaSnO3 (L<missing VAR>BSO)was applied as the electron transport layer (ETL) unprecedentedly in thesimulation study of PSCs, while CuSbS2 was utilized as the hole transport layer(HTL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1.6, 'eV', 2],[170.0, 1000, 'nm', 4],[172.0, 1013, 'cm', 4],[173.0, -3, ',', 4],[178.0, 1.4, 'eV', 4],[215.0, 400, 'nm', 5],[227.0, -1, ',', 5],[232.0, 4.1, 'eV', 5],[303.0, 1015, ',', 7],[306.0, 1020, ',', 7],[310.0, 1021, 'cm', 7],[311.0, -3, ',', 7],[465.0, 5.9, 'eV', 10],[468.0, 300, 'K', 10],[500.0, 29.13, '%', 11]

H
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330011, 330011)
 La-doped BaSnO3 (L<missing VAR>BSO)was applied as the electron transport layer (ETL) unprecedentedly in thesimulation study of PSCs, while CuSbS2 was utilized as the hole transport layer(HTL).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1.6, 'eV', 2],[152.0, 1000, 'nm', 4],[154.0, 1013, 'cm', 4],[155.0, -3, ',', 4],[160.0, 1.4, 'eV', 4],[197.0, 400, 'nm', 5],[209.0, -1, ',', 5],[214.0, 4.1, 'eV', 5],[285.0, 1015, ',', 7],[288.0, 1020, ',', 7],[292.0, 1021, 'cm', 7],[293.0, -3, ',', 7],[447.0, 5.9, 'eV', 10],[450.0, 300, 'K', 10],[482.0, 29.13, '%', 11]

PS
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330020, 330021)
 wxAM<missing VAR>PS was used to validate the results of SCAPS simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 1.6, 'eV', 1],[142.0, 1000, 'nm', 3],[144.0, 1013, 'cm', 3],[145.0, -3, ',', 3],[150.0, 1.4, 'eV', 3],[187.0, 400, 'nm', 4],[199.0, -1, ',', 4],[204.0, 4.1, 'eV', 4],[275.0, 1015, ',', 6],[278.0, 1020, ',', 6],[282.0, 1021, 'cm', 6],[283.0, -3, ',', 6],[437.0, 5.9, 'eV', 9],[440.0, 300, 'K', 9],[472.0, 29.13, '%', 10]

SC
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330037, 330038)
 wxAM<missing VAR>PS was used to validate the results of SCAPS simulations.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1.6, 'eV', 1],[125.0, 1000, 'nm', 3],[127.0, 1013, 'cm', 3],[128.0, -3, ',', 3],[133.0, 1.4, 'eV', 3],[170.0, 400, 'nm', 4],[182.0, -1, ',', 4],[187.0, 4.1, 'eV', 4],[258.0, 1015, ',', 6],[261.0, 1020, ',', 6],[265.0, 1021, 'cm', 6],[266.0, -3, ',', 6],[420.0, 5.9, 'eV', 9],[423.0, 300, 'K', 9],[455.0, 29.13, '%', 10]

PS
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330040, 330041)
 wxAM<missing VAR>PS was used to validate the results of SCAPS simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1.6, 'eV', 1],[122.0, 1000, 'nm', 3],[124.0, 1013, 'cm', 3],[125.0, -3, ',', 3],[130.0, 1.4, 'eV', 3],[167.0, 400, 'nm', 4],[179.0, -1, ',', 4],[184.0, 4.1, 'eV', 4],[255.0, 1015, ',', 6],[258.0, 1020, ',', 6],[262.0, 1021, 'cm', 6],[263.0, -3, ',', 6],[417.0, 5.9, 'eV', 9],[420.0, 300, 'K', 9],[452.0, 29.13, '%', 10]

Cs2TiBr6
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330088, 330092)
 Moreover,the first-principle density function theory (DFT) calculations were performedfor validating the 1.6 eV bandgap of the Cs2TiBr6 absorber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1.6, 'eV', 0],[71.0, 1000, 'nm', 2],[73.0, 1013, 'cm', 2],[74.0, -3, ',', 2],[79.0, 1.4, 'eV', 2],[116.0, 400, 'nm', 3],[128.0, -1, ',', 3],[133.0, 4.1, 'eV', 3],[204.0, 1015, ',', 5],[207.0, 1020, ',', 5],[211.0, 1021, 'cm', 5],[212.0, -3, ',', 5],[366.0, 5.9, 'eV', 8],[369.0, 300, 'K', 8],[401.0, 29.13, '%', 9]

PSC
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330125, 330127)
 To enhance thedevice performance, we analyzed and optimized various parameters of the PSCusing SCAPS.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1.6, 'eV', 1],[36.0, 1000, 'nm', 1],[38.0, 1013, 'cm', 1],[39.0, -3, ',', 1],[44.0, 1.4, 'eV', 1],[81.0, 400, 'nm', 2],[93.0, -1, ',', 2],[98.0, 4.1, 'eV', 2],[169.0, 1015, ',', 4],[172.0, 1020, ',', 4],[176.0, 1021, 'cm', 4],[177.0, -3, ',', 4],[331.0, 5.9, 'eV', 7],[334.0, 300, 'K', 7],[366.0, 29.13, '%', 8]

SC
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330132, 330133)
 To enhance thedevice performance, we analyzed and optimized various parameters of the PSCusing SCAPS.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1.6, 'eV', 1],[30.0, 1000, 'nm', 1],[32.0, 1013, 'cm', 1],[33.0, -3, ',', 1],[38.0, 1.4, 'eV', 1],[75.0, 400, 'nm', 2],[87.0, -1, ',', 2],[92.0, 4.1, 'eV', 2],[163.0, 1015, ',', 4],[166.0, 1020, ',', 4],[170.0, 1021, 'cm', 4],[171.0, -3, ',', 4],[325.0, 5.9, 'eV', 7],[328.0, 300, 'K', 7],[360.0, 29.13, '%', 8]

PS
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330135, 330136)
 To enhance thedevice performance, we analyzed and optimized various parameters of the PSCusing SCAPS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.6, 'eV', 1],[27.0, 1000, 'nm', 1],[29.0, 1013, 'cm', 1],[30.0, -3, ',', 1],[35.0, 1.4, 'eV', 1],[72.0, 400, 'nm', 2],[84.0, -1, ',', 2],[89.0, 4.1, 'eV', 2],[160.0, 1015, ',', 4],[163.0, 1020, ',', 4],[167.0, 1021, 'cm', 4],[168.0, -3, ',', 4],[322.0, 5.9, 'eV', 7],[325.0, 300, 'K', 7],[357.0, 29.13, '%', 8]

H
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330203, 330203)
 Furthermore, the optimumthickness, hole mobility, and electron affinity of the HTL were 400 nm, 102cm2V-1s<missing VAR>-1, and 4.1 eV, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1.6, 'eV', 3],[40.0, 1000, 'nm', 1],[38.0, 1013, 'cm', 1],[37.0, -3, ',', 1],[32.0, 1.4, 'eV', 1],[5.0, 400, 'nm', 0],[17.0, -1, ',', 0],[22.0, 4.1, 'eV', 0],[93.0, 1015, ',', 2],[96.0, 1020, ',', 2],[100.0, 1021, 'cm', 2],[101.0, -3, ',', 2],[255.0, 5.9, 'eV', 5],[258.0, 300, 'K', 5],[290.0, 29.13, '%', 6]

V
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330216, 330216)
 Furthermore, the optimumthickness, hole mobility, and electron affinity of the HTL were 400 nm, 102cm2V-1s<missing VAR>-1, and 4.1 eV, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1.6, 'eV', 3],[53.0, 1000, 'nm', 1],[51.0, 1013, 'cm', 1],[50.0, -3, ',', 1],[45.0, 1.4, 'eV', 1],[8.0, 400, 'nm', 0],[4.0, -1, ',', 0],[9.0, 4.1, 'eV', 0],[80.0, 1015, ',', 2],[83.0, 1020, ',', 2],[87.0, 1021, 'cm', 2],[88.0, -3, ',', 2],[242.0, 5.9, 'eV', 5],[245.0, 300, 'K', 5],[277.0, 29.13, '%', 6]

H
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330283, 330283)
 The optimized values of dopingdensity for the absorber layer, HTL, and ETL were 1015, 1020, and 1021 cm-3,respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 1.6, 'eV', 5],[120.0, 1000, 'nm', 3],[118.0, 1013, 'cm', 3],[117.0, -3, ',', 3],[112.0, 1.4, 'eV', 3],[75.0, 400, 'nm', 2],[63.0, -1, ',', 2],[58.0, 4.1, 'eV', 2],[13.0, 1015, ',', 0],[16.0, 1020, ',', 0],[20.0, 1021, 'cm', 0],[21.0, -3, ',', 0],[175.0, 5.9, 'eV', 3],[178.0, 300, 'K', 3],[210.0, 29.13, '%', 4]

H
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330323, 330323)
 Herein, the effect of different HT<missing VAR>Ls was analyzed by matching upthe built-in voltage (Vbi) in respect of the open-circuit voltage (VOC).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 1.6, 'eV', 6],[160.0, 1000, 'nm', 4],[158.0, 1013, 'cm', 4],[157.0, -3, ',', 4],[152.0, 1.4, 'eV', 4],[115.0, 400, 'nm', 3],[103.0, -1, ',', 3],[98.0, 4.1, 'eV', 3],[27.0, 1015, ',', 1],[24.0, 1020, ',', 1],[20.0, 1021, 'cm', 1],[19.0, -3, ',', 1],[135.0, 5.9, 'eV', 2],[138.0, 300, 'K', 2],[170.0, 29.13, '%', 3]

(VOC)
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330364, 330368)
 Herein, the effect of different HT<missing VAR>Ls was analyzed by matching upthe built-in voltage (Vbi) in respect of the open-circuit voltage (VOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 1.6, 'eV', 6],[201.0, 1000, 'nm', 4],[199.0, 1013, 'cm', 4],[198.0, -3, ',', 4],[193.0, 1.4, 'eV', 4],[156.0, 400, 'nm', 3],[144.0, -1, ',', 3],[139.0, 4.1, 'eV', 3],[68.0, 1015, ',', 1],[65.0, 1020, ',', 1],[61.0, 1021, 'cm', 1],[60.0, -3, ',', 1],[90.0, 5.9, 'eV', 2],[93.0, 300, 'K', 2],[125.0, 29.13, '%', 3]

VOC
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330394, 330396)
 It wasfound that the Vbi was directly proportional to the VOC, and CuSbS2 was thechampion in terms of efficiency for the PSC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 1.6, 'eV', 7],[231.0, 1000, 'nm', 5],[229.0, 1013, 'cm', 5],[228.0, -3, ',', 5],[223.0, 1.4, 'eV', 5],[186.0, 400, 'nm', 4],[174.0, -1, ',', 4],[169.0, 4.1, 'eV', 4],[98.0, 1015, ',', 2],[95.0, 1020, ',', 2],[91.0, 1021, 'cm', 2],[90.0, -3, ',', 2],[62.0, 5.9, 'eV', 1],[65.0, 300, 'K', 1],[97.0, 29.13, '%', 2]

CuSbS2
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330401, 330404)
 It wasfound that the Vbi was directly proportional to the VOC, and CuSbS2 was thechampion in terms of efficiency for the PSC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 1.6, 'eV', 7],[238.0, 1000, 'nm', 5],[236.0, 1013, 'cm', 5],[235.0, -3, ',', 5],[230.0, 1.4, 'eV', 5],[193.0, 400, 'nm', 4],[181.0, -1, ',', 4],[176.0, 4.1, 'eV', 4],[105.0, 1015, ',', 2],[102.0, 1020, ',', 2],[98.0, 1021, 'cm', 2],[97.0, -3, ',', 2],[54.0, 5.9, 'eV', 1],[57.0, 300, 'K', 1],[89.0, 29.13, '%', 2]

PSC
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330425, 330427)
 It wasfound that the Vbi was directly proportional to the VOC, and CuSbS2 was thechampion in terms of efficiency for the PSC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 1.6, 'eV', 7],[262.0, 1000, 'nm', 5],[260.0, 1013, 'cm', 5],[259.0, -3, ',', 5],[254.0, 1.4, 'eV', 5],[217.0, 400, 'nm', 4],[205.0, -1, ',', 4],[200.0, 4.1, 'eV', 4],[129.0, 1015, ',', 2],[126.0, 1020, ',', 2],[122.0, 1021, 'cm', 2],[121.0, -3, ',', 2],[31.0, 5.9, 'eV', 1],[34.0, 300, 'K', 1],[66.0, 29.13, '%', 2]

PSC
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330453, 330455)
 The optimum work function of metalcontact and temperature of the PSC were 5.9 eV and 300 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 1.6, 'eV', 8],[290.0, 1000, 'nm', 6],[288.0, 1013, 'cm', 6],[287.0, -3, ',', 6],[282.0, 1.4, 'eV', 6],[245.0, 400, 'nm', 5],[233.0, -1, ',', 5],[228.0, 4.1, 'eV', 5],[157.0, 1015, ',', 3],[154.0, 1020, ',', 3],[150.0, 1021, 'cm', 3],[149.0, -3, ',', 3],[3.0, 5.9, 'eV', 0],[6.0, 300, 'K', 0],[38.0, 29.13, '%', 1]

PC
###Investigating the theoretical performance of Cs$_2$TiBr$_6$-based perovskite solar cell with La-doped BaSnO$_3$ and CuSbS$_2$ as the charge transport layers|Kumar Shivesh,Intekhab Alam,A. K. Kushwaha,Manish Kumar,S. V. Singh###
(330487, 330488)
 Afterthe final optimization, the device achieved an exhilarating PCE<missing VAR> of 29.13%.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[407.0, 1.6, 'eV', 9],[324.0, 1000, 'nm', 7],[322.0, 1013, 'cm', 7],[321.0, -3, ',', 7],[316.0, 1.4, 'eV', 7],[279.0, 400, 'nm', 6],[267.0, -1, ',', 6],[262.0, 4.1, 'eV', 6],[191.0, 1015, ',', 4],[188.0, 1020, ',', 4],[184.0, 1021, 'cm', 4],[183.0, -3, ',', 4],[29.0, 5.9, 'eV', 1],[26.0, 300, 'K', 1],[5.0, 29.13, '%', 0]

(NFAs)
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330564, 330568)
 Driven by the rapid development of non-fullerene electron acceptors (NFAs),the power conversion efficiencies of organic solar cells (OSCs) have reachedlevels suitable for commercial applications.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 6, ',', 3]

(OSCs)
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330588, 330592)
 Driven by the rapid development of non-fullerene electron acceptors (NFAs),the power conversion efficiencies of organic solar cells (OSCs) have reachedlevels suitable for commercial applications.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 6, ',', 3]

NF
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330628, 330629)
 However, the poor operationalstability of high-performance NFA OSCs is a remaining fundamental challengethat must be addressed.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 6, ',', 2]

OSCs
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330632, 330634)
 However, the poor operationalstability of high-performance NFA OSCs is a remaining fundamental challengethat must be addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 6, ',', 2]

NF
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330673, 330674)
 Whilst previous studies have primarily focused on theNFA component, we consider here the degradation pathways of both the donor andacceptor materials in the benchmark PM<missing VAR>6Y6 blend.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 6, ',', 1]

P
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330713, 330713)
 Whilst previous studies have primarily focused on theNFA component, we consider here the degradation pathways of both the donor andacceptor materials in the benchmark PM<missing VAR>6Y6 blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 6, ',', 1]

Y6
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330716, 330717)
 Whilst previous studies have primarily focused on theNFA component, we consider here the degradation pathways of both the donor andacceptor materials in the benchmark PM<missing VAR>6Y6 blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 6, ',', 1]

P
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330756, 330756)
 Here, we show that lightsoaking greatly increases the energetic disorder and trap state density in PM<missing VAR>6,with little effect on Y6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 6, ',', 0]

Y6
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330770, 330771)
 Here, we show that lightsoaking greatly increases the energetic disorder and trap state density in PM<missing VAR>6,with little effect on Y6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 6, ',', 0]

P
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330809, 330809)
 This is corroborated by electron paramagneticresonance spectroscopy, which reveals increased recombination via trappedpolarons on PM<missing VAR>6 after light soaking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 6, ',', 1]

In
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330820, 330820)
 In addition, ultrafast opticalspectroscopy studies on light-soaked samples show that PM<missing VAR>6 singlet excitons arerapidly converted into interchain polaron pairs on sub-100 fs timescales; thisprocess outcompetes electron transfer to Y6, significantly reducing the chargegeneration yield of the blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 6, ',', 2]

P
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330846, 330846)
 In addition, ultrafast opticalspectroscopy studies on light-soaked samples show that PM<missing VAR>6 singlet excitons arerapidly converted into interchain polaron pairs on sub-100 fs timescales; thisprocess outcompetes electron transfer to Y6, significantly reducing the chargegeneration yield of the blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 6, ',', 2]

Y6
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330893, 330894)
 In addition, ultrafast opticalspectroscopy studies on light-soaked samples show that PM<missing VAR>6 singlet excitons arerapidly converted into interchain polaron pairs on sub-100 fs timescales; thisprocess outcompetes electron transfer to Y6, significantly reducing the chargegeneration yield of the blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 6, ',', 2]

PB
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330935, 330936)
 We make similar observations in the parentpolymer, PBD<missing VAR>B-T<missing VAR>, indicating that this class of donor materials, used in mosthigh-performance OSCs to date, are intrinsically unstable to light soaking.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 6, ',', 3]

B
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330938, 330938)
 We make similar observations in the parentpolymer, PBD<missing VAR>B-T<missing VAR>, indicating that this class of donor materials, used in mosthigh-performance OSCs to date, are intrinsically unstable to light soaking.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 6, ',', 3]

OSCs
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(330969, 330971)
 We make similar observations in the parentpolymer, PBD<missing VAR>B-T<missing VAR>, indicating that this class of donor materials, used in mosthigh-performance OSCs to date, are intrinsically unstable to light soaking.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 6, ',', 3]

OSC
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(331026, 331028)
Thus, we reveal that the donor polymer can be a further critical weak link inefficient OSC systems, whose degradation mechanism needs to be addressedcollectively with NFAs.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 6, ',', 4]

NFAs
###The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells|Yiwen Wang,Alberto Privitera,Giacomo Londi,Alexander J. Sneyd,Deping Qian,Yoann Olivier,Lorenzo Sorace,David Beljonne,Zhe Li,Alexander J. Gillett###
(331052, 331054)
Thus, we reveal that the donor polymer can be a further critical weak link inefficient OSC systems, whose degradation mechanism needs to be addressedcollectively with NFAs.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 6, ',', 4]

C
###Beyond Lambertian light trapping for large-area silicon solar cells: fabrication methods|Jovan Maksimovic,Jingwen Hu,Soon Hock Ng,Tomas Katkus,Gediminas Seniutinas,Tatiana Pinedo Rivera,Michael Stuiber,Yoshiaki Nishijima,Sajeev John,Saulius Juodkazis###
(331100, 331100)
 Light trapping photonic crystal (PhC) patterns on the surface of Si solarcells provides a novel opportunity to approach the theoretical efficiency limitof 32.3%, for light-to-electrical power conversion with a single junction cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 32.3, '%', 0],[100.0, 29, '%', 1],[333.0, 7, '%', 6],[410.0, 10, ',', 12]

Si
###Beyond Lambertian light trapping for large-area silicon solar cells: fabrication methods|Jovan Maksimovic,Jingwen Hu,Soon Hock Ng,Tomas Katkus,Gediminas Seniutinas,Tatiana Pinedo Rivera,Michael Stuiber,Yoshiaki Nishijima,Sajeev John,Saulius Juodkazis###
(331113, 331113)
 Light trapping photonic crystal (PhC) patterns on the surface of Si solarcells provides a novel opportunity to approach the theoretical efficiency limitof 32.3%, for light-to-electrical power conversion with a single junction cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 32.3, '%', 0],[87.0, 29, '%', 1],[320.0, 7, '%', 6],[397.0, 10, ',', 12]

Si
###Beyond Lambertian light trapping for large-area silicon solar cells: fabrication methods|Jovan Maksimovic,Jingwen Hu,Soon Hock Ng,Tomas Katkus,Gediminas Seniutinas,Tatiana Pinedo Rivera,Michael Stuiber,Yoshiaki Nishijima,Sajeev John,Saulius Juodkazis###
(331241, 331241)
 The interference and slow light effects are harnessed forcollecting light even at the long wavelengths near the Si band-gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 32.3, '%', 2],[41.0, 29, '%', 1],[192.0, 7, '%', 4],[269.0, 10, ',', 10]

C
###Beyond Lambertian light trapping for large-area silicon solar cells: fabrication methods|Jovan Maksimovic,Jingwen Hu,Soon Hock Ng,Tomas Katkus,Gediminas Seniutinas,Tatiana Pinedo Rivera,Michael Stuiber,Yoshiaki Nishijima,Sajeev John,Saulius Juodkazis###
(331390, 331390)
 Spectral characterisation of the PhC light trapping is compared forsamples fabricated by different methods.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 32.3, '%', 5],[190.0, 29, '%', 4],[43.0, 7, '%', 1],[120.0, 10, ',', 7]

Si
###Beyond Lambertian light trapping for large-area silicon solar cells: fabrication methods|Jovan Maksimovic,Jingwen Hu,Soon Hock Ng,Tomas Katkus,Gediminas Seniutinas,Tatiana Pinedo Rivera,Michael Stuiber,Yoshiaki Nishijima,Sajeev John,Saulius Juodkazis###
(331418, 331418)
 Reflectance of Si etched via laserpatterned mask was 7% at visible wavelengths and was comparable with Sipatterned via EBL made mask.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 32.3, '%', 6],[218.0, 29, '%', 5],[15.0, 7, '%', 0],[92.0, 10, ',', 6]

Si
###Beyond Lambertian light trapping for large-area silicon solar cells: fabrication methods|Jovan Maksimovic,Jingwen Hu,Soon Hock Ng,Tomas Katkus,Gediminas Seniutinas,Tatiana Pinedo Rivera,Michael Stuiber,Yoshiaki Nishijima,Sajeev John,Saulius Juodkazis###
(331450, 331450)
 Reflectance of Si etched via laserpatterned mask was 7% at visible wavelengths and was comparable with Sipatterned via EBL made mask.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 32.3, '%', 6],[250.0, 29, '%', 5],[17.0, 7, '%', 0],[60.0, 10, ',', 6]

B
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331535, 331535)
The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3 A DFT study.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.25, ',', 3],[170.0, 0.5, ',', 3],[236.0, 0.25, ',', 4],[239.0, 0.5, ',', 4],[321.0, 1.85, 'eV', 6],[331.0, 0.5, 'in', 6],[472.0, 23, '%', 9]

RbPbI3
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331557, 331560)
The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3 A DFT study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.25, ',', 3],[145.0, 0.5, ',', 3],[211.0, 0.25, ',', 4],[214.0, 0.5, ',', 4],[296.0, 1.85, 'eV', 6],[306.0, 0.5, 'in', 6],[447.0, 23, '%', 9]

RbPb1-x
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331680, 331684)
 Herein, we reportthe structural, electronic and optical properties of RbPb1-xMxI3 (where,M<missing VAR>Sn,Ge and x<missing VAR>0.25, 0.50, 0.75) by alloying the B-site with Sn and Ge,using the density functional theory.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[18.0, 0.25, ',', 0],[21.0, 0.5, ',', 0],[87.0, 0.25, ',', 1],[90.0, 0.5, ',', 1],[172.0, 1.85, 'eV', 3],[182.0, 0.5, 'in', 3],[323.0, 23, '%', 6]

I3
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331686, 331687)
 Herein, we reportthe structural, electronic and optical properties of RbPb1-xMxI3 (where,M<missing VAR>Sn,Ge and x<missing VAR>0.25, 0.50, 0.75) by alloying the B-site with Sn and Ge,using the density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.25, ',', 0],[18.0, 0.5, ',', 0],[84.0, 0.25, ',', 1],[87.0, 0.5, ',', 1],[169.0, 1.85, 'eV', 3],[179.0, 0.5, 'in', 3],[320.0, 23, '%', 6]

Sn
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331695, 331695)
 Herein, we reportthe structural, electronic and optical properties of RbPb1-xMxI3 (where,M<missing VAR>Sn,Ge and x<missing VAR>0.25, 0.50, 0.75) by alloying the B-site with Sn and Ge,using the density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.25, ',', 0],[10.0, 0.5, ',', 0],[76.0, 0.25, ',', 1],[79.0, 0.5, ',', 1],[161.0, 1.85, 'eV', 3],[171.0, 0.5, 'in', 3],[312.0, 23, '%', 6]

Ge
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331697, 331697)
 Herein, we reportthe structural, electronic and optical properties of RbPb1-xMxI3 (where,M<missing VAR>Sn,Ge and x<missing VAR>0.25, 0.50, 0.75) by alloying the B-site with Sn and Ge,using the density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.25, ',', 0],[8.0, 0.5, ',', 0],[74.0, 0.25, ',', 1],[77.0, 0.5, ',', 1],[159.0, 1.85, 'eV', 3],[169.0, 0.5, 'in', 3],[310.0, 23, '%', 6]

B
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331717, 331717)
 Herein, we reportthe structural, electronic and optical properties of RbPb1-xMxI3 (where,M<missing VAR>Sn,Ge and x<missing VAR>0.25, 0.50, 0.75) by alloying the B-site with Sn and Ge,using the density functional theory.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.25, ',', 0],[12.0, 0.5, ',', 0],[54.0, 0.25, ',', 1],[57.0, 0.5, ',', 1],[139.0, 1.85, 'eV', 3],[149.0, 0.5, 'in', 3],[290.0, 23, '%', 6]

Sn
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331723, 331723)
 Herein, we reportthe structural, electronic and optical properties of RbPb1-xMxI3 (where,M<missing VAR>Sn,Ge and x<missing VAR>0.25, 0.50, 0.75) by alloying the B-site with Sn and Ge,using the density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.25, ',', 0],[18.0, 0.5, ',', 0],[48.0, 0.25, ',', 1],[51.0, 0.5, ',', 1],[133.0, 1.85, 'eV', 3],[143.0, 0.5, 'in', 3],[284.0, 23, '%', 6]

Ge
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331727, 331727)
 Herein, we reportthe structural, electronic and optical properties of RbPb1-xMxI3 (where,M<missing VAR>Sn,Ge and x<missing VAR>0.25, 0.50, 0.75) by alloying the B-site with Sn and Ge,using the density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.25, ',', 0],[22.0, 0.5, ',', 0],[44.0, 0.25, ',', 1],[47.0, 0.5, ',', 1],[129.0, 1.85, 'eV', 3],[139.0, 0.5, 'in', 3],[280.0, 23, '%', 6]

RbPb1-x
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331757, 331761)
 The formation enthalpy is estimated forall RbPb1-xMxI3 (with x<missing VAR> 0.25, 0.50, 0.75), which confirms stability for allthe structures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[55.0, 0.25, ',', 1],[52.0, 0.5, ',', 1],[10.0, 0.25, ',', 0],[13.0, 0.5, ',', 0],[95.0, 1.85, 'eV', 2],[105.0, 0.5, 'in', 2],[246.0, 23, '%', 5]

I3
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331763, 331764)
 The formation enthalpy is estimated forall RbPb1-xMxI3 (with x<missing VAR> 0.25, 0.50, 0.75), which confirms stability for allthe structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.25, ',', 1],[58.0, 0.5, ',', 1],[7.0, 0.25, ',', 0],[10.0, 0.5, ',', 0],[92.0, 1.85, 'eV', 2],[102.0, 0.5, 'in', 2],[243.0, 23, '%', 5]

S
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331814, 331814)
 The energy bandgap and density of states (D<missing VAR>OS) have beenthoroughly investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 0.25, ',', 2],[109.0, 0.5, ',', 2],[43.0, 0.25, ',', 1],[40.0, 0.5, ',', 1],[42.0, 1.85, 'eV', 1],[52.0, 0.5, 'in', 1],[193.0, 23, '%', 4]

Sn/Ge
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331841, 331843)
 The energy bandgap decreases with the increasing Sn/Gecontents, the lowest bandgap of 1.850 eV is observed at x<missing VAR>  0.50 in the case ofRbPb1-xGexI3 systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[139.0, 0.25, ',', 3],[136.0, 0.5, ',', 3],[70.0, 0.25, ',', 2],[67.0, 0.5, ',', 2],[13.0, 1.85, 'eV', 0],[23.0, 0.5, 'in', 0],[164.0, 23, '%', 3]

RbPb1-x
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331875, 331879)
 The energy bandgap decreases with the increasing Sn/Gecontents, the lowest bandgap of 1.850 eV is observed at x<missing VAR>  0.50 in the case ofRbPb1-xGexI3 systems.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[173.0, 0.25, ',', 3],[170.0, 0.5, ',', 3],[104.0, 0.25, ',', 2],[101.0, 0.5, ',', 2],[19.0, 1.85, 'eV', 0],[9.0, 0.5, 'in', 0],[128.0, 23, '%', 3]

I3
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331881, 331882)
 The energy bandgap decreases with the increasing Sn/Gecontents, the lowest bandgap of 1.850 eV is observed at x<missing VAR>  0.50 in the case ofRbPb1-xGexI3 systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 0.25, ',', 3],[176.0, 0.5, ',', 3],[110.0, 0.25, ',', 2],[107.0, 0.5, ',', 2],[25.0, 1.85, 'eV', 0],[15.0, 0.5, 'in', 0],[125.0, 23, '%', 3]

S
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331920, 331920)
 Further, the effective masses and the binding energy ofexcitons and spectroscopic limited maximum efficiency (SLME) are also estimatedfor all the mixed systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 0.25, ',', 4],[215.0, 0.5, ',', 4],[149.0, 0.25, ',', 3],[146.0, 0.5, ',', 3],[64.0, 1.85, 'eV', 1],[54.0, 0.5, 'in', 1],[87.0, 23, '%', 2]

Sn
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331983, 331983)
 The exciton type is observed to change fromMott-Wannier to Frenkel type with increasing the contents of both Sn and Ge atthe B-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 0.25, ',', 5],[278.0, 0.5, ',', 5],[212.0, 0.25, ',', 4],[209.0, 0.5, ',', 4],[127.0, 1.85, 'eV', 2],[117.0, 0.5, 'in', 2],[24.0, 23, '%', 1]

Ge
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331987, 331987)
 The exciton type is observed to change fromMott-Wannier to Frenkel type with increasing the contents of both Sn and Ge atthe B-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 0.25, ',', 5],[282.0, 0.5, ',', 5],[216.0, 0.25, ',', 4],[213.0, 0.5, ',', 4],[131.0, 1.85, 'eV', 2],[121.0, 0.5, 'in', 2],[20.0, 23, '%', 1]

B
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(331994, 331994)
 The exciton type is observed to change fromMott-Wannier to Frenkel type with increasing the contents of both Sn and Ge atthe B-site.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 0.25, ',', 5],[289.0, 0.5, ',', 5],[223.0, 0.25, ',', 4],[220.0, 0.5, ',', 4],[138.0, 1.85, 'eV', 2],[128.0, 0.5, 'in', 2],[13.0, 23, '%', 1]

Sn/Ge
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(332033, 332035)
 The maximum efficiency of 23% is achieved using an active layercontaining an equal admixture of Sn/Ge and Pb.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[331.0, 0.25, ',', 6],[328.0, 0.5, ',', 6],[262.0, 0.25, ',', 5],[259.0, 0.5, ',', 5],[177.0, 1.85, 'eV', 3],[167.0, 0.5, 'in', 3],[26.0, 23, '%', 0]

Pb
###The effect of B-site alloying on the electronic and opto-electronic properties of RbPbI3: A DFT study|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury###
(332039, 332039)
 The maximum efficiency of 23% is achieved using an active layercontaining an equal admixture of Sn/Ge and Pb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 0.25, ',', 6],[334.0, 0.5, ',', 6],[268.0, 0.25, ',', 5],[265.0, 0.5, ',', 5],[183.0, 1.85, 'eV', 3],[173.0, 0.5, 'in', 3],[32.0, 23, '%', 0]

C
###Lithography Free Process for the Fabrication of Periodic Silicon Micro/Nano-Wire Arrays and Its Light-trapping Properties|Divya Rani,Anil Kumar,Anjali Sain,Deepika Singh,Neeraj Joshi,Ravi Kumar Varma,Mrinal Dutta,Arup Samanta###
(332168, 332168)
 Vertically aligned silicon micro/nanowire arrays of different sizes have beensynthesized by combining the modified metal-assisted chemical etching (M<missing VAR>ACE)and reactive ion etching (RIE) methods.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 40, 'nm', 4],[179.0, 330, 'nm', 4],[182.0, 950, 'nm', 4],[194.0, 1.12, 'micron', 4],[196.0, 1.1, 'micron', 4],[200.0, 1, 'micron', 4],[217.0, 0.22, ',', 4],[219.0, 0.6, 'and', 4],[220.0, 0.33, 'percent', 4],[251.0, 4.2, ',', 4],[254.0, 9.2, ',', 4],[258.0, 11, 'percent', 4],[287.0, 1200, 'nm', 4]

Ds
###Efficient and ultra-stable perovskite light-emitting diodes|Bingbing Guo,Runchen Lai,Sijie Jiang,Yaxiao Lian,Zhixiang Ren,Puyang Li,Xuhui Cao,Shiyu Xing,Yaxin Wang,Weiwei Li,Chen Zou,Mengyu Chen,Cheng Li,Baodan Zhao,Dawei Di###
(332586, 332586)
 Perovskite light-emitting diodes (PeLEDs) have emerged as a strong contenderfor next-generation display and information technologies.
EXCEPTION 3: IndexError for Ds
Ds
[104.0, 1.0, 'x', 2],[119.0, 5.4, 'x', 2],[127.0, 1.9, 'x', 2],[149.0, 3.7, 'W', 2],[166.0, 2.1, 'W', 2],[183.0, 0.42, 'W', 2],[203.0, 0.21, 'W', 2],[238.0, 22.8, '%', 2]

PB
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333104, 333105)
Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBD<missing VAR>B-T<missing VAR> and Y-Series.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 20, '%', 1]

B
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333107, 333107)
Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBD<missing VAR>B-T<missing VAR> and Y-Series.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 20, '%', 1]

Y
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333113, 333113)
Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBD<missing VAR>B-T<missing VAR> and Y-Series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 20, '%', 1]

(OPV)
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333130, 333134)
 The great progress in organic photovoltaics (OPV) over the past few years hasbeen largely achieved by the development of non-fullerene acceptors (NFAs),with power conversion efficiencies now approaching 20%.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 20, '%', 0]

(NFAs)
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333169, 333173)
 The great progress in organic photovoltaics (OPV) over the past few years hasbeen largely achieved by the development of non-fullerene acceptors (NFAs),with power conversion efficiencies now approaching 20%.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 20, '%', 0]

OPV
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333291, 333293)
 Halogenation of OPV materialshas long been employed to tailor energy levels and to enhance open circuitvoltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 20, '%', 3]

P
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333379, 333379)
 Using the complementary spin-sensitive methods ofphotoluminescence detected magnetic resonance (PLDMR) and transient electronparamagnetic resonance (trEPR) corroborated by transient absorption andquantum-chemical calculations, we unravel exciton pathways in OPV blendsemploying the polymer donors PBD<missing VAR>B-T<missing VAR>, PM<missing VAR>6 and PM<missing VAR>7 together with NFAs Y6 and Y7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 20, '%', 5]

OPV
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333432, 333434)
 Using the complementary spin-sensitive methods ofphotoluminescence detected magnetic resonance (PLDMR) and transient electronparamagnetic resonance (trEPR) corroborated by transient absorption andquantum-chemical calculations, we unravel exciton pathways in OPV blendsemploying the polymer donors PBD<missing VAR>B-T<missing VAR>, PM<missing VAR>6 and PM<missing VAR>7 together with NFAs Y6 and Y7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 20, '%', 5]

PB
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333447, 333448)
 Using the complementary spin-sensitive methods ofphotoluminescence detected magnetic resonance (PLDMR) and transient electronparamagnetic resonance (trEPR) corroborated by transient absorption andquantum-chemical calculations, we unravel exciton pathways in OPV blendsemploying the polymer donors PBD<missing VAR>B-T<missing VAR>, PM<missing VAR>6 and PM<missing VAR>7 together with NFAs Y6 and Y7.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 20, '%', 5]

B
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333450, 333450)
 Using the complementary spin-sensitive methods ofphotoluminescence detected magnetic resonance (PLDMR) and transient electronparamagnetic resonance (trEPR) corroborated by transient absorption andquantum-chemical calculations, we unravel exciton pathways in OPV blendsemploying the polymer donors PBD<missing VAR>B-T<missing VAR>, PM<missing VAR>6 and PM<missing VAR>7 together with NFAs Y6 and Y7.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 20, '%', 5]

P
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333455, 333455)
 Using the complementary spin-sensitive methods ofphotoluminescence detected magnetic resonance (PLDMR) and transient electronparamagnetic resonance (trEPR) corroborated by transient absorption andquantum-chemical calculations, we unravel exciton pathways in OPV blendsemploying the polymer donors PBD<missing VAR>B-T<missing VAR>, PM<missing VAR>6 and PM<missing VAR>7 together with NFAs Y6 and Y7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 20, '%', 5]

P
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333461, 333461)
 Using the complementary spin-sensitive methods ofphotoluminescence detected magnetic resonance (PLDMR) and transient electronparamagnetic resonance (trEPR) corroborated by transient absorption andquantum-chemical calculations, we unravel exciton pathways in OPV blendsemploying the polymer donors PBD<missing VAR>B-T<missing VAR>, PM<missing VAR>6 and PM<missing VAR>7 together with NFAs Y6 and Y7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 20, '%', 5]

NFAs
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333469, 333471)
 Using the complementary spin-sensitive methods ofphotoluminescence detected magnetic resonance (PLDMR) and transient electronparamagnetic resonance (trEPR) corroborated by transient absorption andquantum-chemical calculations, we unravel exciton pathways in OPV blendsemploying the polymer donors PBD<missing VAR>B-T<missing VAR>, PM<missing VAR>6 and PM<missing VAR>7 together with NFAs Y6 and Y7.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 20, '%', 5]

Y6
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333473, 333474)
 Using the complementary spin-sensitive methods ofphotoluminescence detected magnetic resonance (PLDMR) and transient electronparamagnetic resonance (trEPR) corroborated by transient absorption andquantum-chemical calculations, we unravel exciton pathways in OPV blendsemploying the polymer donors PBD<missing VAR>B-T<missing VAR>, PM<missing VAR>6 and PM<missing VAR>7 together with NFAs Y6 and Y7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 20, '%', 5]

Y7
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333478, 333479)
 Using the complementary spin-sensitive methods ofphotoluminescence detected magnetic resonance (PLDMR) and transient electronparamagnetic resonance (trEPR) corroborated by transient absorption andquantum-chemical calculations, we unravel exciton pathways in OPV blendsemploying the polymer donors PBD<missing VAR>B-T<missing VAR>, PM<missing VAR>6 and PM<missing VAR>7 together with NFAs Y6 and Y7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 20, '%', 5]

NF
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333497, 333498)
All blends reveal triplet excitons on the NFA populated via non-geminate holeback transfer and, in blends with halogenated donors, also by spin-orbitcoupling driven intersystem crossing.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 20, '%', 6]

OPV
###Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series|Jeannine Grüne,Giacomo Londi,Alexander J. Gillett,Basil Stähly,Sebastian Lulei,Maria Kotova,Yoann Olivier,Vladimir Dyakonov,Andreas Sperlich###
(333598, 333600)
 Identifying these triplet formationpathways in all tested solar cell absorber films highlights the untappedpotential for improved charge generation to further increase plateauing OPVefficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[409.0, 20, '%', 7]

P
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334092, 334092)
Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 3, ',', 1],[161.0, 9, ',', 3],[182.0, -2, ',', 3],[191.0, -2, ',', 3],[197.0, 9, ',', 3],[463.0, 1.16, 'V', 7],[470.0, 20, '%', 7],[485.0, 1.6, 'eV', 7]

H
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334128, 334128)
 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz)self-assembled monolayer (SAM) has been employed in perovskite single junctionand tandem devices demonstrating high efficiencies.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, ',', 0],[125.0, 9, ',', 2],[146.0, -2, ',', 2],[155.0, -2, ',', 2],[161.0, 9, ',', 2],[427.0, 1.16, 'V', 6],[434.0, 20, '%', 6],[449.0, 1.6, 'eV', 6]

P
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334146, 334146)
 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz)self-assembled monolayer (SAM) has been employed in perovskite single junctionand tandem devices demonstrating high efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 3, ',', 0],[107.0, 9, ',', 2],[128.0, -2, ',', 2],[137.0, -2, ',', 2],[143.0, 9, ',', 2],[409.0, 1.16, 'V', 6],[416.0, 20, '%', 6],[431.0, 1.6, 'eV', 6]

S
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334159, 334159)
 [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz)self-assembled monolayer (SAM) has been employed in perovskite single junctionand tandem devices demonstrating high efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3, ',', 0],[94.0, 9, ',', 2],[115.0, -2, ',', 2],[124.0, -2, ',', 2],[130.0, 9, ',', 2],[396.0, 1.16, 'V', 6],[403.0, 20, '%', 6],[418.0, 1.6, 'eV', 6]

P
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334223, 334223)
 However, a uniformperovskite layer does not form due to the hydrophobicity of Me-4PACz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 3, ',', 1],[30.0, 9, ',', 1],[51.0, -2, ',', 1],[60.0, -2, ',', 1],[66.0, 9, ',', 1],[332.0, 1.16, 'V', 5],[339.0, 20, '%', 5],[354.0, 1.6, 'eV', 5]

N
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334262, 334262)
 Here, wetackle this challenge by adding a conjugated polyelectrolytepoly(9,9-bis(3-(N,N-dimethyl)-N-ethylammonium-propyl-2,7-fluorene)-alt-2,7-(9,9dioctylfluorene)dibromide(PFN-Br) to the Me-4PACz in a specific ratio, defines as PzPFN.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 3, ',', 2],[9.0, 9, ',', 0],[12.0, -2, ',', 0],[21.0, -2, ',', 0],[27.0, 9, ',', 0],[293.0, 1.16, 'V', 4],[300.0, 20, '%', 4],[315.0, 1.6, 'eV', 4]

N
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334264, 334264)
 Here, wetackle this challenge by adding a conjugated polyelectrolytepoly(9,9-bis(3-(N,N-dimethyl)-N-ethylammonium-propyl-2,7-fluorene)-alt-2,7-(9,9dioctylfluorene)dibromide(PFN-Br) to the Me-4PACz in a specific ratio, defines as PzPFN.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 3, ',', 2],[11.0, 9, ',', 0],[10.0, -2, ',', 0],[19.0, -2, ',', 0],[25.0, 9, ',', 0],[291.0, 1.16, 'V', 4],[298.0, 20, '%', 4],[313.0, 1.6, 'eV', 4]

N
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334269, 334269)
 Here, wetackle this challenge by adding a conjugated polyelectrolytepoly(9,9-bis(3-(N,N-dimethyl)-N-ethylammonium-propyl-2,7-fluorene)-alt-2,7-(9,9dioctylfluorene)dibromide(PFN-Br) to the Me-4PACz in a specific ratio, defines as PzPFN.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 3, ',', 2],[16.0, 9, ',', 0],[5.0, -2, ',', 0],[14.0, -2, ',', 0],[20.0, 9, ',', 0],[286.0, 1.16, 'V', 4],[293.0, 20, '%', 4],[308.0, 1.6, 'eV', 4]

PFN
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334298, 334300)
 Here, wetackle this challenge by adding a conjugated polyelectrolytepoly(9,9-bis(3-(N,N-dimethyl)-N-ethylammonium-propyl-2,7-fluorene)-alt-2,7-(9,9dioctylfluorene)dibromide(PFN-Br) to the Me-4PACz in a specific ratio, defines as PzPFN.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3, ',', 2],[45.0, 9, ',', 0],[24.0, -2, ',', 0],[15.0, -2, ',', 0],[9.0, 9, ',', 0],[255.0, 1.16, 'V', 4],[262.0, 20, '%', 4],[277.0, 1.6, 'eV', 4]

Br
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334302, 334302)
 Here, wetackle this challenge by adding a conjugated polyelectrolytepoly(9,9-bis(3-(N,N-dimethyl)-N-ethylammonium-propyl-2,7-fluorene)-alt-2,7-(9,9dioctylfluorene)dibromide(PFN-Br) to the Me-4PACz in a specific ratio, defines as PzPFN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 3, ',', 2],[49.0, 9, ',', 0],[28.0, -2, ',', 0],[19.0, -2, ',', 0],[13.0, 9, ',', 0],[253.0, 1.16, 'V', 4],[260.0, 20, '%', 4],[275.0, 1.6, 'eV', 4]

P
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334312, 334312)
 Here, wetackle this challenge by adding a conjugated polyelectrolytepoly(9,9-bis(3-(N,N-dimethyl)-N-ethylammonium-propyl-2,7-fluorene)-alt-2,7-(9,9dioctylfluorene)dibromide(PFN-Br) to the Me-4PACz in a specific ratio, defines as PzPFN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3, ',', 2],[59.0, 9, ',', 0],[38.0, -2, ',', 0],[29.0, -2, ',', 0],[23.0, 9, ',', 0],[243.0, 1.16, 'V', 4],[250.0, 20, '%', 4],[265.0, 1.6, 'eV', 4]

PFN
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334330, 334332)
 Here, wetackle this challenge by adding a conjugated polyelectrolytepoly(9,9-bis(3-(N,N-dimethyl)-N-ethylammonium-propyl-2,7-fluorene)-alt-2,7-(9,9dioctylfluorene)dibromide(PFN-Br) to the Me-4PACz in a specific ratio, defines as PzPFN.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 3, ',', 2],[77.0, 9, ',', 0],[56.0, -2, ',', 0],[47.0, -2, ',', 0],[41.0, 9, ',', 0],[223.0, 1.16, 'V', 4],[230.0, 20, '%', 4],[245.0, 1.6, 'eV', 4]

PFN
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334349, 334351)
 With thismixing engineering strategy of PzPFN, the PFN-Br interacts with the A-sitecation and is confirmed via solution-state nuclear magnetic resonance studies.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 3, ',', 3],[96.0, 9, ',', 1],[75.0, -2, ',', 1],[66.0, -2, ',', 1],[60.0, 9, ',', 1],[204.0, 1.16, 'V', 3],[211.0, 20, '%', 3],[226.0, 1.6, 'eV', 3]

PFN
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334356, 334358)
 With thismixing engineering strategy of PzPFN, the PFN-Br interacts with the A-sitecation and is confirmed via solution-state nuclear magnetic resonance studies.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 3, ',', 3],[103.0, 9, ',', 1],[82.0, -2, ',', 1],[73.0, -2, ',', 1],[67.0, 9, ',', 1],[197.0, 1.16, 'V', 3],[204.0, 20, '%', 3],[219.0, 1.6, 'eV', 3]

Br
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334360, 334360)
 With thismixing engineering strategy of PzPFN, the PFN-Br interacts with the A-sitecation and is confirmed via solution-state nuclear magnetic resonance studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 3, ',', 3],[107.0, 9, ',', 1],[86.0, -2, ',', 1],[77.0, -2, ',', 1],[71.0, 9, ',', 1],[195.0, 1.16, 'V', 3],[202.0, 20, '%', 3],[217.0, 1.6, 'eV', 3]

FWH
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334412, 334414)
The narrow full width at half maximum (FWHM) of diffraction peaks of perovskitefilm revealed improved crystallization on the optimal mixing ratio of PzPFN.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 3, ',', 4],[159.0, 9, ',', 2],[138.0, -2, ',', 2],[129.0, -2, ',', 2],[123.0, 9, ',', 2],[141.0, 1.16, 'V', 2],[148.0, 20, '%', 2],[163.0, 1.6, 'eV', 2]

PFN
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334450, 334452)
The narrow full width at half maximum (FWHM) of diffraction peaks of perovskitefilm revealed improved crystallization on the optimal mixing ratio of PzPFN.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 3, ',', 4],[197.0, 9, ',', 2],[176.0, -2, ',', 2],[167.0, -2, ',', 2],[161.0, 9, ',', 2],[103.0, 1.16, 'V', 2],[110.0, 20, '%', 2],[125.0, 1.6, 'eV', 2]

PFN
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334465, 334467)
Interestingly, the mixing of PFN-Br additionally tunes the work function of theMe-4PACz as revealed by the Kelvin probe force microscopy and built-in-voltageestimation in solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 3, ',', 5],[212.0, 9, ',', 3],[191.0, -2, ',', 3],[182.0, -2, ',', 3],[176.0, 9, ',', 3],[88.0, 1.16, 'V', 1],[95.0, 20, '%', 1],[110.0, 1.6, 'eV', 1]

Br
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334469, 334469)
Interestingly, the mixing of PFN-Br additionally tunes the work function of theMe-4PACz as revealed by the Kelvin probe force microscopy and built-in-voltageestimation in solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 3, ',', 5],[216.0, 9, ',', 3],[195.0, -2, ',', 3],[186.0, -2, ',', 3],[180.0, 9, ',', 3],[86.0, 1.16, 'V', 1],[93.0, 20, '%', 1],[108.0, 1.6, 'eV', 1]

P
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334489, 334489)
Interestingly, the mixing of PFN-Br additionally tunes the work function of theMe-4PACz as revealed by the Kelvin probe force microscopy and built-in-voltageestimation in solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 3, ',', 5],[236.0, 9, ',', 3],[215.0, -2, ',', 3],[206.0, -2, ',', 3],[200.0, 9, ',', 3],[66.0, 1.16, 'V', 1],[73.0, 20, '%', 1],[88.0, 1.6, 'eV', 1]

PFN
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334534, 334536)
 Devices employing optimized PzPFN mixing ratiodeliver open-circuit voltage (Voc)of 1.16 V and efficiency >20% for perovskiteswith a bandgap of 1.6 eV with high reproducibility and concomitant stability.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[413.0, 3, ',', 6],[281.0, 9, ',', 4],[260.0, -2, ',', 4],[251.0, -2, ',', 4],[245.0, 9, ',', 4],[19.0, 1.16, 'V', 0],[26.0, 20, '%', 0],[41.0, 1.6, 'eV', 0]

P
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334604, 334604)
Considering significant research on Me-4PACz SAM<missing VAR>, our work highlights theimportance of obtaining a uniform perovskite layer with improved yield andperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[483.0, 3, ',', 7],[351.0, 9, ',', 5],[330.0, -2, ',', 5],[321.0, -2, ',', 5],[315.0, 9, ',', 5],[49.0, 1.16, 'V', 1],[42.0, 20, '%', 1],[27.0, 1.6, 'eV', 1]

S
###Resolving the Hydrophobicity of Me-4PACz Hole Transport Layer for High-Efficiency Inverted Perovskite Solar Cells|Kashimul Hossain,Ashish Kulkarni,Urvashi Bothra,Benjamin Klingebiel,Thomas Kirchartz,Michael Saliba,Dinesh Kabra###
(334608, 334608)
Considering significant research on Me-4PACz SAM<missing VAR>, our work highlights theimportance of obtaining a uniform perovskite layer with improved yield andperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[487.0, 3, ',', 7],[355.0, 9, ',', 5],[334.0, -2, ',', 5],[325.0, -2, ',', 5],[319.0, 9, ',', 5],[53.0, 1.16, 'V', 1],[46.0, 20, '%', 1],[31.0, 1.6, 'eV', 1]

GaN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(334664, 334665)
Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaN/AlN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(334669, 334674)
Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(UV)
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(334820, 334823)
 This is particularly challenging inthe ultraviolet (UV) range, where spin coating with hydrogen silsesquioxane(HSQ) appears as an interesting approach in terms of transmittance andrefractive index.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(334842, 334843)
 This is particularly challenging inthe ultraviolet (UV) range, where spin coating with hydrogen silsesquioxane(HSQ) appears as an interesting approach in terms of transmittance andrefractive index.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UV
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(334888, 334889)
 Here, we report a comprehensive study on UV photodetectorsbased on GaN or AlGaN/AlN nanowire ensembles encapsulated in HSQ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(334898, 334899)
 Here, we report a comprehensive study on UV photodetectorsbased on GaN or AlGaN/AlN nanowire ensembles encapsulated in HSQ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaN/AlN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(334903, 334908)
 Here, we report a comprehensive study on UV photodetectorsbased on GaN or AlGaN/AlN nanowire ensembles encapsulated in HSQ<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

HS
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(334918, 334919)
 Here, we report a comprehensive study on UV photodetectorsbased on GaN or AlGaN/AlN nanowire ensembles encapsulated in HSQ<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UV
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(334992, 334993)
We discuss the final performance of planarized UV photodetectors based on threekinds of nanowire ensembles (i) non-intentionally-doped (nid) GaN nanowires,(ii) Ge-doped GaN nanowires, and (iii) nid GaN nanowires terminated with anAlGaN/AlN superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(335026, 335027)
We discuss the final performance of planarized UV photodetectors based on threekinds of nanowire ensembles (i) non-intentionally-doped (nid) GaN nanowires,(ii) Ge-doped GaN nanowires, and (iii) nid GaN nanowires terminated with anAlGaN/AlN superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(335037, 335037)
We discuss the final performance of planarized UV photodetectors based on threekinds of nanowire ensembles (i) non-intentionally-doped (nid) GaN nanowires,(ii) Ge-doped GaN nanowires, and (iii) nid GaN nanowires terminated with anAlGaN/AlN superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(335041, 335042)
We discuss the final performance of planarized UV photodetectors based on threekinds of nanowire ensembles (i) non-intentionally-doped (nid) GaN nanowires,(ii) Ge-doped GaN nanowires, and (iii) nid GaN nanowires terminated with anAlGaN/AlN superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(335055, 335056)
We discuss the final performance of planarized UV photodetectors based on threekinds of nanowire ensembles (i) non-intentionally-doped (nid) GaN nanowires,(ii) Ge-doped GaN nanowires, and (iii) nid GaN nanowires terminated with anAlGaN/AlN superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaN/AlN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(335067, 335072)
We discuss the final performance of planarized UV photodetectors based on threekinds of nanowire ensembles (i) non-intentionally-doped (nid) GaN nanowires,(ii) Ge-doped GaN nanowires, and (iii) nid GaN nanowires terminated with anAlGaN/AlN superlattice.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

AlGaN/AlN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(335120, 335125)
 The incorporation of the superlattice allows tuning thespectral response with bias, which can enhance the carrier collection from theAlGaN/AlN superlattice or from the GaN stem.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaN
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(335135, 335136)
 The incorporation of the superlattice allows tuning thespectral response with bias, which can enhance the carrier collection from theAlGaN/AlN superlattice or from the GaN stem.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(335141, 335141)
 In all the cases, the performanceof the planarized devices remains determined by the nanowire nature, sincetheir characteristics in terms of linearity and spectral selectivity are closerto those demonstrated in single nanowires than those of planar devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UV
###Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture|E. Akar,I. Dimkou,A. Ajay,Martien I. den Hertog,E. Monroy###
(335278, 335279)
 Thus,the visible rejection is several orders of magnitude and there is no indicationof persistent photocurrent, which makes all the samples suitable forUV-selective photodetection applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335380, 335380)
 Single-junction photovoltaic cells are considered to be efficient solarenergy converters, but even ideal cells cannot exceed the their fundamentalthermodynamic efficiency limit, first analysed by Shockley and Queisser (SQ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 30, '%', 1],[27.0, -40, '%', 1],[494.0, 70, '%', 11],[528.0, 1000, 'C', 11]

S
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335475, 335475)
 Conceptssuch as solar thermo-photovoltaics (ST<missing VAR>PV) and thermo-photonics4 aim to harnessthis dissipated heat, yet exceeding the SQ<missing VAR> limit has not been achieved, mainlydue to the very high operating temperatures needed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 30, '%', 2],[68.0, -40, '%', 2],[399.0, 70, '%', 8],[433.0, 1000, 'C', 8]

V
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335478, 335478)
 Conceptssuch as solar thermo-photovoltaics (ST<missing VAR>PV) and thermo-photonics4 aim to harnessthis dissipated heat, yet exceeding the SQ<missing VAR> limit has not been achieved, mainlydue to the very high operating temperatures needed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 30, '%', 2],[71.0, -40, '%', 2],[396.0, 70, '%', 8],[430.0, 1000, 'C', 8]

S
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335508, 335508)
 Conceptssuch as solar thermo-photovoltaics (ST<missing VAR>PV) and thermo-photonics4 aim to harnessthis dissipated heat, yet exceeding the SQ<missing VAR> limit has not been achieved, mainlydue to the very high operating temperatures needed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 30, '%', 2],[101.0, -40, '%', 2],[366.0, 70, '%', 8],[400.0, 1000, 'C', 8]

P
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335563, 335563)
 Recently, we demonstratedthat in high-temperature endothermic-photoluminescence (PL), the photon rate isconserved with temperature increase, while each photon is blue shifted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 30, '%', 3],[156.0, -40, '%', 3],[311.0, 70, '%', 7],[345.0, 1000, 'C', 7]

P
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335610, 335610)
 We alsodemonstrated how endothermic-PL<missing VAR> generates orders of magnitude moreenergetic-photons than thermal emission at similar temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 30, '%', 4],[203.0, -40, '%', 4],[264.0, 70, '%', 6],[298.0, 1000, 'C', 6]

P
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335654, 335654)
 These newfindings show that endothermic-PL<missing VAR> is an ideal optical heat-pump.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 30, '%', 5],[247.0, -40, '%', 5],[220.0, 70, '%', 5],[254.0, 1000, 'C', 5]

P
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335706, 335706)
 Here, wepropose and thermodynamically analyse a novel device based on ThermallyEnhanced Photo Luminescence (TEPL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 30, '%', 6],[299.0, -40, '%', 6],[168.0, 70, '%', 4],[202.0, 1000, 'C', 4]

In
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335711, 335711)
 In such a device, solar radiation isharvested by a low-bandgap PL<missing VAR> material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 30, '%', 7],[304.0, -40, '%', 7],[163.0, 70, '%', 3],[197.0, 1000, 'C', 3]

P
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335737, 335737)
 In such a device, solar radiation isharvested by a low-bandgap PL<missing VAR> material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 30, '%', 7],[330.0, -40, '%', 7],[137.0, 70, '%', 3],[171.0, 1000, 'C', 3]

In
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335743, 335743)
 In addition to the PL<missing VAR> excitation, theotherwise lost heat raises the temperature and allows the TEPL<missing VAR> emission to becoupled to a higher bandgap solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 30, '%', 8],[336.0, -40, '%', 8],[131.0, 70, '%', 2],[165.0, 1000, 'C', 2]

P
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335751, 335751)
 In addition to the PL<missing VAR> excitation, theotherwise lost heat raises the temperature and allows the TEPL<missing VAR> emission to becoupled to a higher bandgap solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 30, '%', 8],[344.0, -40, '%', 8],[123.0, 70, '%', 2],[157.0, 1000, 'C', 2]

P
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335780, 335780)
 In addition to the PL<missing VAR> excitation, theotherwise lost heat raises the temperature and allows the TEPL<missing VAR> emission to becoupled to a higher bandgap solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 30, '%', 8],[373.0, -40, '%', 8],[94.0, 70, '%', 2],[128.0, 1000, 'C', 2]

P
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335854, 335854)
 Ourresults show that such a TEPL<missing VAR> based device can reach theoretical maximalefficiencies of 70%, as high as in ST<missing VAR>PV, while the significantly loweredoperating temperatures are below 1000C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 30, '%', 10],[447.0, -40, '%', 10],[20.0, 70, '%', 0],[54.0, 1000, 'C', 0]

S
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335886, 335886)
 Ourresults show that such a TEPL<missing VAR> based device can reach theoretical maximalefficiencies of 70%, as high as in ST<missing VAR>PV, while the significantly loweredoperating temperatures are below 1000C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[481.0, 30, '%', 10],[479.0, -40, '%', 10],[12.0, 70, '%', 0],[22.0, 1000, 'C', 0]

PV
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335888, 335889)
 Ourresults show that such a TEPL<missing VAR> based device can reach theoretical maximalefficiencies of 70%, as high as in ST<missing VAR>PV, while the significantly loweredoperating temperatures are below 1000C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[483.0, 30, '%', 10],[481.0, -40, '%', 10],[14.0, 70, '%', 0],[19.0, 1000, 'C', 0]

In
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335911, 335911)
 In addition to the theoreticalanalysis, we experimentally demonstrated enhanced photo-current in TEPL<missing VAR> devicepumped by sub-bandgap radiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[506.0, 30, '%', 11],[504.0, -40, '%', 11],[37.0, 70, '%', 1],[3.0, 1000, 'C', 1]

P
###A Thermal-Photovoltaic Device Based on Thermally Enhanced Photoluminescence|Assaf Manor,Carmel Rotschild###
(335941, 335941)
 In addition to the theoreticalanalysis, we experimentally demonstrated enhanced photo-current in TEPL<missing VAR> devicepumped by sub-bandgap radiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[536.0, 30, '%', 11],[534.0, -40, '%', 11],[67.0, 70, '%', 1],[33.0, 1000, 'C', 1]

GaAs
###Electronic and hole minibands in quantum wire arrays of different crystallographic structure|M. Krawczyk,J. W. Klos###
(336465, 336466)
 We consider quantum wire arrays consisting of GaAs rods embedded inAlx<missing VAR>Ga1-xAs and disposed in sites of a square or triangular lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Electronic and hole minibands in quantum wire arrays of different crystallographic structure|M. Krawczyk,J. W. Klos###
(336475, 336475)
 We consider quantum wire arrays consisting of GaAs rods embedded inAlx<missing VAR>Ga1-xAs and disposed in sites of a square or triangular lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xAs
###Electronic and hole minibands in quantum wire arrays of different crystallographic structure|M. Krawczyk,J. W. Klos###
(336477, 336481)
 We consider quantum wire arrays consisting of GaAs rods embedded inAlx<missing VAR>Ga1-xAs and disposed in sites of a square or triangular lattice.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Al
###Electronic and hole minibands in quantum wire arrays of different crystallographic structure|M. Krawczyk,J. W. Klos###
(336564, 336564)
The electronic and hole spectra around the conduction band bottom and thevalence band top are examined versus geometry of the lattice formed by therods, concentration of Al in the matrix material, and structural parametersincluding the filling fraction and the lattice constant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Efficiency limits of quantum well solar cells|J. P. Connolly,I. M. Ballard,K. W. J. Barnham,D. B. Bushnell,T. N. D. Tibbits,J. S. Roberts###
(336840, 336840)
 The quantum well solar cell (Q<missing VAR>WSC) has been proposed as a flexible means toensuring current matching for tandem cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Efficiency limits of quantum well solar cells|J. P. Connolly,I. M. Ballard,K. W. J. Barnham,D. B. Bushnell,T. N. D. Tibbits,J. S. Roberts###
(336897, 336899)
 This paper explores the furtheradvantage afforded by the indication that Q<missing VAR>WSCs operate in the radiative limitbecause radiative contribution to the dark current is seen to dominate inexperimental data at biases corresponding to operation under concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSCs
###Efficiency limits of quantum well solar cells|J. P. Connolly,I. M. Ballard,K. W. J. Barnham,D. B. Bushnell,T. N. D. Tibbits,J. S. Roberts###
(336966, 336968)
 Thedark currents of Q<missing VAR>WSCs are analysed in terms of a light and dark current model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSC
###Efficiency limits of quantum well solar cells|J. P. Connolly,I. M. Ballard,K. W. J. Barnham,D. B. Bushnell,T. N. D. Tibbits,J. S. Roberts###
(337234, 337236)
 This analysis shows that the Q<missing VAR>WSC is inherently subjectto the fundamental radiative efficiency limit at high currents where theradiative dark current dominates, whereas good homojunction cells are welldescribed by the ideal Shockley picture where the limit is determined byradiative and non radiative recombination in the charge neutral layers of thecell.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337490, 337490)
 We carried out comparativemeasurements of the steady state absorption and photoluminescence (PL) on thecopolymer poly[N-(1-octylnonyl)-2,7-carbazole] -alt-5,5-[4,7-di(thien-2-yl)-2,1,3 -benzothiadiazole] (PCDTBT), its building blocks aswell as on the newly synthesizedN-(1-octylnonyl)-2,7-bis-[(5-phenyl)thien-2-yl)carbazole (BPT<missing VAR>-carbazole) (seeFigure 1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, -2, ',', 0],[30.0, -5, ',', 0],[36.0, 4, ',', 0],[50.0, -2, ',', 0],[53.0, 1, ',', 0],[100.0, -2, ',', 0],[307.0, 50, 'ps', 3]

N
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337503, 337503)
 We carried out comparativemeasurements of the steady state absorption and photoluminescence (PL) on thecopolymer poly[N-(1-octylnonyl)-2,7-carbazole] -alt-5,5-[4,7-di(thien-2-yl)-2,1,3 -benzothiadiazole] (PCDTBT), its building blocks aswell as on the newly synthesizedN-(1-octylnonyl)-2,7-bis-[(5-phenyl)thien-2-yl)carbazole (BPT<missing VAR>-carbazole) (seeFigure 1).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, -2, ',', 0],[17.0, -5, ',', 0],[23.0, 4, ',', 0],[37.0, -2, ',', 0],[40.0, 1, ',', 0],[87.0, -2, ',', 0],[294.0, 50, 'ps', 3]

PC
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337552, 337553)
 We carried out comparativemeasurements of the steady state absorption and photoluminescence (PL) on thecopolymer poly[N-(1-octylnonyl)-2,7-carbazole] -alt-5,5-[4,7-di(thien-2-yl)-2,1,3 -benzothiadiazole] (PCDTBT), its building blocks aswell as on the newly synthesizedN-(1-octylnonyl)-2,7-bis-[(5-phenyl)thien-2-yl)carbazole (BPT<missing VAR>-carbazole) (seeFigure 1).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, -2, ',', 0],[32.0, -5, ',', 0],[26.0, 4, ',', 0],[12.0, -2, ',', 0],[9.0, 1, ',', 0],[37.0, -2, ',', 0],[244.0, 50, 'ps', 3]

B
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337556, 337556)
 We carried out comparativemeasurements of the steady state absorption and photoluminescence (PL) on thecopolymer poly[N-(1-octylnonyl)-2,7-carbazole] -alt-5,5-[4,7-di(thien-2-yl)-2,1,3 -benzothiadiazole] (PCDTBT), its building blocks aswell as on the newly synthesizedN-(1-octylnonyl)-2,7-bis-[(5-phenyl)thien-2-yl)carbazole (BPT<missing VAR>-carbazole) (seeFigure 1).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, -2, ',', 0],[36.0, -5, ',', 0],[30.0, 4, ',', 0],[16.0, -2, ',', 0],[13.0, 1, ',', 0],[34.0, -2, ',', 0],[241.0, 50, 'ps', 3]

N
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337583, 337583)
 We carried out comparativemeasurements of the steady state absorption and photoluminescence (PL) on thecopolymer poly[N-(1-octylnonyl)-2,7-carbazole] -alt-5,5-[4,7-di(thien-2-yl)-2,1,3 -benzothiadiazole] (PCDTBT), its building blocks aswell as on the newly synthesizedN-(1-octylnonyl)-2,7-bis-[(5-phenyl)thien-2-yl)carbazole (BPT<missing VAR>-carbazole) (seeFigure 1).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, -2, ',', 0],[63.0, -5, ',', 0],[57.0, 4, ',', 0],[43.0, -2, ',', 0],[40.0, 1, ',', 0],[7.0, -2, ',', 0],[214.0, 50, 'ps', 3]

BP
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337612, 337613)
 We carried out comparativemeasurements of the steady state absorption and photoluminescence (PL) on thecopolymer poly[N-(1-octylnonyl)-2,7-carbazole] -alt-5,5-[4,7-di(thien-2-yl)-2,1,3 -benzothiadiazole] (PCDTBT), its building blocks aswell as on the newly synthesizedN-(1-octylnonyl)-2,7-bis-[(5-phenyl)thien-2-yl)carbazole (BPT<missing VAR>-carbazole) (seeFigure 1).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, -2, ',', 0],[92.0, -5, ',', 0],[86.0, 4, ',', 0],[72.0, -2, ',', 0],[69.0, 1, ',', 0],[22.0, -2, ',', 0],[184.0, 50, 'ps', 3]

H
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337640, 337640)
 The high-energy absorption band (HE<missing VAR>B) of PCDTBT<missing VAR> was identified withabsorption of carbazoles with adjacent thiophene rings while the low-energyband (LEB) originates instead from the charge transfer (CT) state delocalizedover the aforementioned unit with adjacent benzothiadiazole group.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, -2, ',', 1],[120.0, -5, ',', 1],[114.0, 4, ',', 1],[100.0, -2, ',', 1],[97.0, 1, ',', 1],[50.0, -2, ',', 1],[157.0, 50, 'ps', 2]

B
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337642, 337642)
 The high-energy absorption band (HE<missing VAR>B) of PCDTBT<missing VAR> was identified withabsorption of carbazoles with adjacent thiophene rings while the low-energyband (LEB) originates instead from the charge transfer (CT) state delocalizedover the aforementioned unit with adjacent benzothiadiazole group.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, -2, ',', 1],[122.0, -5, ',', 1],[116.0, 4, ',', 1],[102.0, -2, ',', 1],[99.0, 1, ',', 1],[52.0, -2, ',', 1],[155.0, 50, 'ps', 2]

PC
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337647, 337648)
 The high-energy absorption band (HE<missing VAR>B) of PCDTBT<missing VAR> was identified withabsorption of carbazoles with adjacent thiophene rings while the low-energyband (LEB) originates instead from the charge transfer (CT) state delocalizedover the aforementioned unit with adjacent benzothiadiazole group.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, -2, ',', 1],[127.0, -5, ',', 1],[121.0, 4, ',', 1],[107.0, -2, ',', 1],[104.0, 1, ',', 1],[57.0, -2, ',', 1],[149.0, 50, 'ps', 2]

B
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337651, 337651)
 The high-energy absorption band (HE<missing VAR>B) of PCDTBT<missing VAR> was identified withabsorption of carbazoles with adjacent thiophene rings while the low-energyband (LEB) originates instead from the charge transfer (CT) state delocalizedover the aforementioned unit with adjacent benzothiadiazole group.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, -2, ',', 1],[131.0, -5, ',', 1],[125.0, 4, ',', 1],[111.0, -2, ',', 1],[108.0, 1, ',', 1],[61.0, -2, ',', 1],[146.0, 50, 'ps', 2]

B
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337689, 337689)
 The high-energy absorption band (HE<missing VAR>B) of PCDTBT<missing VAR> was identified withabsorption of carbazoles with adjacent thiophene rings while the low-energyband (LEB) originates instead from the charge transfer (CT) state delocalizedover the aforementioned unit with adjacent benzothiadiazole group.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, -2, ',', 1],[169.0, -5, ',', 1],[163.0, 4, ',', 1],[149.0, -2, ',', 1],[146.0, 1, ',', 1],[99.0, -2, ',', 1],[108.0, 50, 'ps', 2]

C
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337705, 337705)
 The high-energy absorption band (HE<missing VAR>B) of PCDTBT<missing VAR> was identified withabsorption of carbazoles with adjacent thiophene rings while the low-energyband (LEB) originates instead from the charge transfer (CT) state delocalizedover the aforementioned unit with adjacent benzothiadiazole group.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, -2, ',', 1],[185.0, -5, ',', 1],[179.0, 4, ',', 1],[165.0, -2, ',', 1],[162.0, 1, ',', 1],[115.0, -2, ',', 1],[92.0, 50, 'ps', 2]

H
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337738, 337738)
Photoexcitation of the HE<missing VAR>B is followed by internal relaxation prior theradiative decay to the ground state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, -2, ',', 2],[218.0, -5, ',', 2],[212.0, 4, ',', 2],[198.0, -2, ',', 2],[195.0, 1, ',', 2],[148.0, -2, ',', 2],[59.0, 50, 'ps', 1]

B
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337740, 337740)
Photoexcitation of the HE<missing VAR>B is followed by internal relaxation prior theradiative decay to the ground state.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, -2, ',', 2],[220.0, -5, ',', 2],[214.0, 4, ',', 2],[200.0, -2, ',', 2],[197.0, 1, ',', 2],[150.0, -2, ',', 2],[57.0, 50, 'ps', 1]

PC70B
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337772, 337775)
 Adding PC70BM<missing VAR> results in the efficient PL<missing VAR>quenching within the first 50 ps after excitation.
Featurization terminated normally.
0,0,0,0,0.013888888888888888,0.9722222222222222,0,0,0,0,0,0,0,0,0.013888888888888888,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, -2, ',', 3],[252.0, -5, ',', 3],[246.0, 4, ',', 3],[232.0, -2, ',', 3],[229.0, 1, ',', 3],[182.0, -2, ',', 3],[22.0, 50, 'ps', 0]

P
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337786, 337786)
 Adding PC70BM<missing VAR> results in the efficient PL<missing VAR>quenching within the first 50 ps after excitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, -2, ',', 3],[266.0, -5, ',', 3],[260.0, 4, ',', 3],[246.0, -2, ',', 3],[243.0, 1, ',', 3],[196.0, -2, ',', 3],[11.0, 50, 'ps', 0]

P
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337808, 337808)
 From the PL<missing VAR> excitationexperiments no evidence for a direct electron transfer from the HE<missing VAR>B of PCDTBT<missing VAR>towards the fullerene acceptor was found, therefore the internal relaxationmechanisms within PCDTBT<missing VAR> can be assumed to precede.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, -2, ',', 4],[288.0, -5, ',', 4],[282.0, 4, ',', 4],[268.0, -2, ',', 4],[265.0, 1, ',', 4],[218.0, -2, ',', 4],[11.0, 50, 'ps', 1]

H
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337834, 337834)
 From the PL<missing VAR> excitationexperiments no evidence for a direct electron transfer from the HE<missing VAR>B of PCDTBT<missing VAR>towards the fullerene acceptor was found, therefore the internal relaxationmechanisms within PCDTBT<missing VAR> can be assumed to precede.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, -2, ',', 4],[314.0, -5, ',', 4],[308.0, 4, ',', 4],[294.0, -2, ',', 4],[291.0, 1, ',', 4],[244.0, -2, ',', 4],[37.0, 50, 'ps', 1]

B
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337836, 337836)
 From the PL<missing VAR> excitationexperiments no evidence for a direct electron transfer from the HE<missing VAR>B of PCDTBT<missing VAR>towards the fullerene acceptor was found, therefore the internal relaxationmechanisms within PCDTBT<missing VAR> can be assumed to precede.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, -2, ',', 4],[316.0, -5, ',', 4],[310.0, 4, ',', 4],[296.0, -2, ',', 4],[293.0, 1, ',', 4],[246.0, -2, ',', 4],[39.0, 50, 'ps', 1]

PC
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337840, 337841)
 From the PL<missing VAR> excitationexperiments no evidence for a direct electron transfer from the HE<missing VAR>B of PCDTBT<missing VAR>towards the fullerene acceptor was found, therefore the internal relaxationmechanisms within PCDTBT<missing VAR> can be assumed to precede.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, -2, ',', 4],[320.0, -5, ',', 4],[314.0, 4, ',', 4],[300.0, -2, ',', 4],[297.0, 1, ',', 4],[250.0, -2, ',', 4],[43.0, 50, 'ps', 1]

B
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337844, 337844)
 From the PL<missing VAR> excitationexperiments no evidence for a direct electron transfer from the HE<missing VAR>B of PCDTBT<missing VAR>towards the fullerene acceptor was found, therefore the internal relaxationmechanisms within PCDTBT<missing VAR> can be assumed to precede.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, -2, ',', 4],[324.0, -5, ',', 4],[318.0, 4, ',', 4],[304.0, -2, ',', 4],[301.0, 1, ',', 4],[254.0, -2, ',', 4],[47.0, 50, 'ps', 1]

PC
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337874, 337875)
 From the PL<missing VAR> excitationexperiments no evidence for a direct electron transfer from the HE<missing VAR>B of PCDTBT<missing VAR>towards the fullerene acceptor was found, therefore the internal relaxationmechanisms within PCDTBT<missing VAR> can be assumed to precede.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, -2, ',', 4],[354.0, -5, ',', 4],[348.0, 4, ',', 4],[334.0, -2, ',', 4],[331.0, 1, ',', 4],[284.0, -2, ',', 4],[77.0, 50, 'ps', 1]

B
###Excitation Dynamics in Low Band Gap Donor-Acceptor Copolymers and Blends|Björn Gieseking,Berthold Jäck,Eduard Preis,Stefan Jung,Michael Forster,Ullrich Scherf,Carsten Deibel,Vladimir Dyakonov###
(337878, 337878)
 From the PL<missing VAR> excitationexperiments no evidence for a direct electron transfer from the HE<missing VAR>B of PCDTBT<missing VAR>towards the fullerene acceptor was found, therefore the internal relaxationmechanisms within PCDTBT<missing VAR> can be assumed to precede.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, -2, ',', 4],[358.0, -5, ',', 4],[352.0, 4, ',', 4],[338.0, -2, ',', 4],[335.0, 1, ',', 4],[288.0, -2, ',', 4],[81.0, 50, 'ps', 1]

C
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(337967, 337967)
 Efficient anti-reflection coatings (AR<missing VAR>C) improve the light collection andthereby increase the current output of solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 3.8, 'nm', 5]

Si
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338011, 338011)
 By simple electrochemicaletching of the Si wafer, porous silicon (PS) layers with excellent broadbandanti-reflection properties can be fabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 3.8, 'nm', 4]

(PS)
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338020, 338023)
 By simple electrochemicaletching of the Si wafer, porous silicon (PS) layers with excellent broadbandanti-reflection properties can be fabricated.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 3.8, 'nm', 4]

In
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338047, 338047)
 In this work, ageing of graded PShas been studied using Spectroscopic Ellipsometry, Transmission ElectronMicroscopy and X<missing VAR>-ray Photoelectron Spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 3.8, 'nm', 3]

PS
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338060, 338061)
 In this work, ageing of graded PShas been studied using Spectroscopic Ellipsometry, Transmission ElectronMicroscopy and X<missing VAR>-ray Photoelectron Spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3.8, 'nm', 3]

PS
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338101, 338102)
 During oxidation of PSelements such as pure Si (Si0), Si2O (Si+), SiO (Si2+),Si2O3 (Si3+), and SiO2 (Si4+) are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 3.8, 'nm', 2]

Si
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338113, 338113)
 During oxidation of PSelements such as pure Si (Si0), Si2O (Si+), SiO (Si2+),Si2O3 (Si3+), and SiO2 (Si4+) are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 3.8, 'nm', 2]

(Si0)
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338115, 338118)
 During oxidation of PSelements such as pure Si (Si0), Si2O (Si+), SiO (Si2+),Si2O3 (Si3+), and SiO2 (Si4+) are present.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 3.8, 'nm', 2]

Si2O
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338121, 338123)
 During oxidation of PSelements such as pure Si (Si0), Si2O (Si+), SiO (Si2+),Si2O3 (Si3+), and SiO2 (Si4+) are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 3.8, 'nm', 2]

Si
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338126, 338126)
 During oxidation of PSelements such as pure Si (Si0), Si2O (Si+), SiO (Si2+),Si2O3 (Si3+), and SiO2 (Si4+) are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 3.8, 'nm', 2]

SiO
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338131, 338132)
 During oxidation of PSelements such as pure Si (Si0), Si2O (Si+), SiO (Si2+),Si2O3 (Si3+), and SiO2 (Si4+) are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3.8, 'nm', 2]

Si2O3
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338142, 338145)
 During oxidation of PSelements such as pure Si (Si0), Si2O (Si+), SiO (Si2+),Si2O3 (Si3+), and SiO2 (Si4+) are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 3.8, 'nm', 2]

SiO2
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338156, 338158)
 During oxidation of PSelements such as pure Si (Si0), Si2O (Si+), SiO (Si2+),Si2O3 (Si3+), and SiO2 (Si4+) are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3.8, 'nm', 2]

In
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338171, 338171)
 In addition bothhydrogen and carbon is introduced to the PS in the form of Si3SiH and CO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 3.8, 'nm', 1]

PS
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338192, 338193)
 In addition bothhydrogen and carbon is introduced to the PS in the form of Si3SiH and CO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3.8, 'nm', 1]

Si3SiH
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338203, 338206)
 In addition bothhydrogen and carbon is introduced to the PS in the form of Si3SiH and CO.
Featurization terminated normally.
0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 3.8, 'nm', 1]

CO
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338210, 338211)
 In addition bothhydrogen and carbon is introduced to the PS in the form of Si3SiH and CO.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3.8, 'nm', 1]

PS
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338260, 338261)
The oxide grows almost linearly with time when exposed to oxygen, from anaverage thickness of 0 - 3.8 nm for the surface PS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3.8, 'nm', 0]

PS
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338289, 338290)
 The oxidation is thencorrelated to the optical stability of multi-layered PS AR<missing VAR>Cs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3.8, 'nm', 1]

Cs
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338294, 338294)
 The oxidation is thencorrelated to the optical stability of multi-layered PS AR<missing VAR>Cs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3.8, 'nm', 1]

PS
###Oxidation effects on graded porous silicon anti-reflection coatings|Annett Thøgersen,Josefine H. Selj,Erik S. Marstein###
(338331, 338332)
 It is found thateven after extensive oxidation, the changes in the optical properties of the PSstructures are small.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3.8, 'nm', 2]

PN
###Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide|Britton W. H. Baugher,Hugh O. H. Churchill,Yafang Yang,Pablo Jarillo-Herrero###
(338358, 338359)
Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 2.0, 'Under', 6],[316.0, 210, 'mA', 6],[343.0, 0.2, '%', 6]

PN
###Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide|Britton W. H. Baugher,Hugh O. H. Churchill,Yafang Yang,Pablo Jarillo-Herrero###
(338397, 338398)
 One of the most fundamental devices for electronics and optoelectronics isthe PN junction, which provides the functional element of diodes, bipolartransistors, photodetectors, LEDs, and solar cells, among many other devices.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 2.0, 'Under', 5],[277.0, 210, 'mA', 5],[304.0, 0.2, '%', 5]

Ds
###Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide|Britton W. H. Baugher,Hugh O. H. Churchill,Yafang Yang,Pablo Jarillo-Herrero###
(338429, 338429)
 One of the most fundamental devices for electronics and optoelectronics isthe PN junction, which provides the functional element of diodes, bipolartransistors, photodetectors, LEDs, and solar cells, among many other devices.
EXCEPTION 3: IndexError for Ds
In
[225.0, 2.0, 'Under', 5],[246.0, 210, 'mA', 5],[273.0, 0.2, '%', 5]

As
###Micrometer-Thin Crystalline-Silicon Solar Cells Integrating Numerically Optimized 2-D Photonic Crystals|V. Depauw,X. Meng,O. El Daif,G. Gomard,L. Lalouat,E. Drouard,C. Trompoukis,A. Fave,C. Seassal,I. Gordon###
(339095, 339095)
 As for the electricalbehavior, the measured internal quantum efficiency shows the strong parasiticabsorptions from the transparent conductive oxide and from the back-reflector,as well as the negative impact of the nanopattern on surface passivation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C60
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339725, 339726)
First-principles investigation of organic photovoltaic materials C60, C70, [C60]PCBM<missing VAR>, and bis-[C60]PCBM<missing VAR> using a many-body G<missing VAR>0W0-Lanczos approach.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 6, ',', 1]

C70
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339729, 339730)
First-principles investigation of organic photovoltaic materials C60, C70, [C60]PCBM<missing VAR>, and bis-[C60]PCBM<missing VAR> using a many-body G<missing VAR>0W0-Lanczos approach.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 6, ',', 1]

[C60]PCB
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339733, 339739)
First-principles investigation of organic photovoltaic materials C60, C70, [C60]PCBM<missing VAR>, and bis-[C60]PCBM<missing VAR> using a many-body G<missing VAR>0W0-Lanczos approach.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: (C60)PCB
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 6, ',', 1]

[C60]PCB
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339747, 339753)
First-principles investigation of organic photovoltaic materials C60, C70, [C60]PCBM<missing VAR>, and bis-[C60]PCBM<missing VAR> using a many-body G<missing VAR>0W0-Lanczos approach.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: (C60)PCB
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 6, ',', 1]

W0
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339766, 339767)
First-principles investigation of organic photovoltaic materials C60, C70, [C60]PCBM<missing VAR>, and bis-[C60]PCBM<missing VAR> using a many-body G<missing VAR>0W0-Lanczos approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 6, ',', 1]

C60
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339811, 339812)
 We present a first-principles investigation of the excited-state propertiesof electron acceptors in organic photovoltaics including C60, C70,[6,6]-phenyl-C61-butyric-acid-methyl-ester ([C60]PCBM), andbis-[C60]PCBM<missing VAR> using many-body perturbation theory within the Hedins<missing VAR>G<missing VAR>0W0 approximation and an efficient Lanczos approach.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 6, ',', 0]

C70
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339815, 339816)
 We present a first-principles investigation of the excited-state propertiesof electron acceptors in organic photovoltaics including C60, C70,[6,6]-phenyl-C61-butyric-acid-methyl-ester ([C60]PCBM), andbis-[C60]PCBM<missing VAR> using many-body perturbation theory within the Hedins<missing VAR>G<missing VAR>0W0 approximation and an efficient Lanczos approach.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 6, ',', 0]

C61
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339828, 339829)
 We present a first-principles investigation of the excited-state propertiesof electron acceptors in organic photovoltaics including C60, C70,[6,6]-phenyl-C61-butyric-acid-methyl-ester ([C60]PCBM), andbis-[C60]PCBM<missing VAR> using many-body perturbation theory within the Hedins<missing VAR>G<missing VAR>0W0 approximation and an efficient Lanczos approach.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 6, ',', 0]

[C60]PCB
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339840, 339846)
 We present a first-principles investigation of the excited-state propertiesof electron acceptors in organic photovoltaics including C60, C70,[6,6]-phenyl-C61-butyric-acid-methyl-ester ([C60]PCBM), andbis-[C60]PCBM<missing VAR> using many-body perturbation theory within the Hedins<missing VAR>G<missing VAR>0W0 approximation and an efficient Lanczos approach.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: (C60)PCB
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 6, ',', 0]

[C60]PCB
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339856, 339862)
 We present a first-principles investigation of the excited-state propertiesof electron acceptors in organic photovoltaics including C60, C70,[6,6]-phenyl-C61-butyric-acid-methyl-ester ([C60]PCBM), andbis-[C60]PCBM<missing VAR> using many-body perturbation theory within the Hedins<missing VAR>G<missing VAR>0W0 approximation and an efficient Lanczos approach.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: (C60)PCB
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 6, ',', 0]

W0
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339885, 339886)
 We present a first-principles investigation of the excited-state propertiesof electron acceptors in organic photovoltaics including C60, C70,[6,6]-phenyl-C61-butyric-acid-methyl-ester ([C60]PCBM), andbis-[C60]PCBM<missing VAR> using many-body perturbation theory within the Hedins<missing VAR>G<missing VAR>0W0 approximation and an efficient Lanczos approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 6, ',', 0]

(VIP)
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339910, 339914)
 Calculated verticalionization potentials (VIP) and vertical electron affinities (VE<missing VAR>A) of C60and C70 agree very well with experimental values measured in gas phase.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 6, ',', 1]

V
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339925, 339925)
 Calculated verticalionization potentials (VIP) and vertical electron affinities (VE<missing VAR>A) of C60and C70 agree very well with experimental values measured in gas phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 6, ',', 1]

C60
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339932, 339933)
 Calculated verticalionization potentials (VIP) and vertical electron affinities (VE<missing VAR>A) of C60and C70 agree very well with experimental values measured in gas phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 6, ',', 1]

C70
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(339938, 339939)
 Calculated verticalionization potentials (VIP) and vertical electron affinities (VE<missing VAR>A) of C60and C70 agree very well with experimental values measured in gas phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 6, ',', 1]

In
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(340046, 340046)
 In addition, it is shown that the low-lyingunoccupied states of [C60]PCBM<missing VAR> are all derived from the highest-occupiedmolecular orbitals and the lowest-unoccupied molecular orbitals of fullereneC60.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 6, ',', 3]

[C60]PCB
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(340072, 340078)
 In addition, it is shown that the low-lyingunoccupied states of [C60]PCBM<missing VAR> are all derived from the highest-occupiedmolecular orbitals and the lowest-unoccupied molecular orbitals of fullereneC60.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: (C60)PCB
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 6, ',', 3]

C60
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(340117, 340118)
 In addition, it is shown that the low-lyingunoccupied states of [C60]PCBM<missing VAR> are all derived from the highest-occupiedmolecular orbitals and the lowest-unoccupied molecular orbitals of fullereneC60.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 6, ',', 3]

[C60]PCB
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(340131, 340137)
 The functional side group in [C60]PCBM<missing VAR> introduces a slightelectron transfer to the fullerene cage, resulting in small decreases of bothVIP and VE<missing VAR>A.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: (C60)PCB
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 6, ',', 4]

VIP
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(340173, 340175)
 The functional side group in [C60]PCBM<missing VAR> introduces a slightelectron transfer to the fullerene cage, resulting in small decreases of bothVIP and VE<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 6, ',', 4]

V
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(340179, 340179)
 The functional side group in [C60]PCBM<missing VAR> introduces a slightelectron transfer to the fullerene cage, resulting in small decreases of bothVIP and VE<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 6, ',', 4]

V
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(340192, 340192)
 This small change of VE<missing VAR>A provides a solid justification for theincrease of open-circuit voltage when replacing fullerene C60 with[C60]PCBM<missing VAR> as the electron acceptor in bulk heterojunction polymer solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 6, ',', 5]

C60
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(340225, 340226)
 This small change of VE<missing VAR>A provides a solid justification for theincrease of open-circuit voltage when replacing fullerene C60 with[C60]PCBM<missing VAR> as the electron acceptor in bulk heterojunction polymer solarcells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 6, ',', 5]

[C60]PCB
###First-principles investigation of organic photovoltaic materials C$_{60}$, C$_{70}$, [C$_{60}$]PCBM, and bis-[C$_{60}$]PCBM using a many-body $G_0W_0$-Lanczos approach|Xiaofeng Qian,Paolo Umari,Nicola Marzari###
(340231, 340237)
 This small change of VE<missing VAR>A provides a solid justification for theincrease of open-circuit voltage when replacing fullerene C60 with[C60]PCBM<missing VAR> as the electron acceptor in bulk heterojunction polymer solarcells.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: (C60)PCB
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[410.0, 6, ',', 5]

N
###Plasmonic Graded-Chains as Deep-Subwavelength Light Concentrators|Natalia Esteves-López,Horacio M. Pastawski,Raúl A. Bustos-Marún###
(340313, 340313)
 We have studied the plasmonic properties of aperiodic arrays of identicalnanoparticles (NPs) formed by two opposite and equal graded-chains (a chainwhere interactions change gradually).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NP
###Plasmonic Graded-Chains as Deep-Subwavelength Light Concentrators|Natalia Esteves-López,Horacio M. Pastawski,Raúl A. Bustos-Marún###
(340443, 340444)
 Thephenomenon was understood by identifying the system with an effective cavitywhere plasmonics excitations are trapped between effective band edges,resulting from the change of passband with NPs<missing VAR> position.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NP
###Plasmonic Graded-Chains as Deep-Subwavelength Light Concentrators|Natalia Esteves-López,Horacio M. Pastawski,Raúl A. Bustos-Marún###
(340491, 340492)
 Thisincludes, different gradings as well as NPs<missing VAR> couplings, damping, and resonantfrequencies.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Plasmonic Graded-Chains as Deep-Subwavelength Light Concentrators|Natalia Esteves-López,Horacio M. Pastawski,Raúl A. Bustos-Marún###
(340509, 340509)
 In the spirit of the scaling laws in condensed matter physics, wedeveloped a theory that allows us to rationalize all these systems<missing VAR> parametersinto universal curves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Plasmonic Graded-Chains as Deep-Subwavelength Light Concentrators|Natalia Esteves-López,Horacio M. Pastawski,Raúl A. Bustos-Marún###
(340655, 340655)
 Additionally, we also providedan analytical solution, in the tight-binding limit, for the plasmonic responseof homogeneous linear chains of NPs illuminated by a plane wave.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340772, 340776)
 The performance of organic solar cells (OSCs) can be greatly improved byincorporating silica-coated gold nanorods (AuSiO2 NRs) at the interfacebetween the hole transporting layer and the active layer due to the plasmoniceffect.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 11, '%', 2]

AuSiO2
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340800, 340803)
 The performance of organic solar cells (OSCs) can be greatly improved byincorporating silica-coated gold nanorods (AuSiO2 NRs) at the interfacebetween the hole transporting layer and the active layer due to the plasmoniceffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 11, '%', 2]

N
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340805, 340805)
 The performance of organic solar cells (OSCs) can be greatly improved byincorporating silica-coated gold nanorods (AuSiO2 NRs) at the interfacebetween the hole transporting layer and the active layer due to the plasmoniceffect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 11, '%', 2]

Au
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340864, 340864)
 The silica shell impedes the aggregation effect of the Au NRs inethanol solution as well as the server charge recombination on the surface ofthe Au NRs otherwise they would bring forward serious reduction in open circuitvoltage when incorporating the Au NRs at the positions in contact with theactive materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 11, '%', 1]

N
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340866, 340866)
 The silica shell impedes the aggregation effect of the Au NRs inethanol solution as well as the server charge recombination on the surface ofthe Au NRs otherwise they would bring forward serious reduction in open circuitvoltage when incorporating the Au NRs at the positions in contact with theactive materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 11, '%', 1]

Au
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340901, 340901)
 The silica shell impedes the aggregation effect of the Au NRs inethanol solution as well as the server charge recombination on the surface ofthe Au NRs otherwise they would bring forward serious reduction in open circuitvoltage when incorporating the Au NRs at the positions in contact with theactive materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 11, '%', 1]

N
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340903, 340903)
 The silica shell impedes the aggregation effect of the Au NRs inethanol solution as well as the server charge recombination on the surface ofthe Au NRs otherwise they would bring forward serious reduction in open circuitvoltage when incorporating the Au NRs at the positions in contact with theactive materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 11, '%', 1]

Au
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340935, 340935)
 The silica shell impedes the aggregation effect of the Au NRs inethanol solution as well as the server charge recombination on the surface ofthe Au NRs otherwise they would bring forward serious reduction in open circuitvoltage when incorporating the Au NRs at the positions in contact with theactive materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 11, '%', 1]

N
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340937, 340937)
 The silica shell impedes the aggregation effect of the Au NRs inethanol solution as well as the server charge recombination on the surface ofthe Au NRs otherwise they would bring forward serious reduction in open circuitvoltage when incorporating the Au NRs at the positions in contact with theactive materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 11, '%', 1]

As
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340960, 340960)
 As a result, while the high open circuit voltage beingmaintained, the optimized plasmonic OSCs possess an increased short circuitcurrent, and correspondingly an elevated power conversion efficiency with theenhancement factor of 11%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 11, '%', 0]

OSCs
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(340991, 340993)
 As a result, while the high open circuit voltage beingmaintained, the optimized plasmonic OSCs possess an increased short circuitcurrent, and correspondingly an elevated power conversion efficiency with theenhancement factor of 11%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 11, '%', 0]

OSCs
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(341050, 341052)
 The origin of performance improvement in OSCs withthe AuSiO2 NRs was analyzed systematically using morphological, electrical,optical characterizations along with theoretical simulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 11, '%', 1]

AuSiO2
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(341059, 341062)
 The origin of performance improvement in OSCs withthe AuSiO2 NRs was analyzed systematically using morphological, electrical,optical characterizations along with theoretical simulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 11, '%', 1]

N
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(341064, 341064)
 The origin of performance improvement in OSCs withthe AuSiO2 NRs was analyzed systematically using morphological, electrical,optical characterizations along with theoretical simulation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 11, '%', 1]

N
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(341205, 341205)
 Simulation results suggestthat the excitation of the transverse and longitudinal surface plasmonresonances of individual NRs as well as their mutual coupling can generatestrong electric field near the vicinity of the NRs, thereby an improved excitongeneration profile in the active layer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 11, '%', 3]

N
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(341241, 341241)
 Simulation results suggestthat the excitation of the transverse and longitudinal surface plasmonresonances of individual NRs as well as their mutual coupling can generatestrong electric field near the vicinity of the NRs, thereby an improved excitongeneration profile in the active layer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 11, '%', 3]

AuSiO2
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(341273, 341276)
 The incorporation of AuSiO2 NRs at theinterface between the hole transporting layer and the active layer alsoimproves hole extraction in the OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 11, '%', 4]

N
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(341278, 341278)
 The incorporation of AuSiO2 NRs at theinterface between the hole transporting layer and the active layer alsoimproves hole extraction in the OSCs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 11, '%', 4]

OSCs
###Efficiency Enhancement in Organic Solar Cells by Incorporating Silica-coated Gold Nanorods at the Buffer/Active interface|Haoyang Zhao,Fan Yang,Peiqian Tong,Yanxia Cui,Yuying Hao,Qinjun Sun,Fang Shi,Qiuqiang Zhan,Hua Wang,Furong Zhu###
(341319, 341321)
 The incorporation of AuSiO2 NRs at theinterface between the hole transporting layer and the active layer alsoimproves hole extraction in the OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 11, '%', 4]

Pb
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341369, 341369)
 A variety of organic-inorganic hybrid perovskites (APbX<missing VAR>3) consisting of mixedcenter cations [A  CH3NH3+, HC(NH2)2+, Cs+] with different PbX<missing VAR>3- cages (X<missing VAR>  I,Br, Cl) have been developed to realize high-efficiency solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C(NH2)2
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341399, 341405)
 A variety of organic-inorganic hybrid perovskites (APbX<missing VAR>3) consisting of mixedcenter cations [A  CH3NH3+, HC(NH2)2+, Cs+] with different PbX<missing VAR>3- cages (X<missing VAR>  I,Br, Cl) have been developed to realize high-efficiency solar cells.
Featurization terminated normally.
0.5714285714285714,0,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341409, 341409)
 A variety of organic-inorganic hybrid perovskites (APbX<missing VAR>3) consisting of mixedcenter cations [A  CH3NH3+, HC(NH2)2+, Cs+] with different PbX<missing VAR>3- cages (X<missing VAR>  I,Br, Cl) have been developed to realize high-efficiency solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341417, 341417)
 A variety of organic-inorganic hybrid perovskites (APbX<missing VAR>3) consisting of mixedcenter cations [A  CH3NH3+, HC(NH2)2+, Cs+] with different PbX<missing VAR>3- cages (X<missing VAR>  I,Br, Cl) have been developed to realize high-efficiency solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341428, 341428)
 A variety of organic-inorganic hybrid perovskites (APbX<missing VAR>3) consisting of mixedcenter cations [A  CH3NH3+, HC(NH2)2+, Cs+] with different PbX<missing VAR>3- cages (X<missing VAR>  I,Br, Cl) have been developed to realize high-efficiency solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341432, 341432)
 A variety of organic-inorganic hybrid perovskites (APbX<missing VAR>3) consisting of mixedcenter cations [A  CH3NH3+, HC(NH2)2+, Cs+] with different PbX<missing VAR>3- cages (X<missing VAR>  I,Br, Cl) have been developed to realize high-efficiency solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341435, 341435)
 A variety of organic-inorganic hybrid perovskites (APbX<missing VAR>3) consisting of mixedcenter cations [A  CH3NH3+, HC(NH2)2+, Cs+] with different PbX<missing VAR>3- cages (X<missing VAR>  I,Br, Cl) have been developed to realize high-efficiency solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341535, 341535)
In particular, we find that the influence of the A-site cation on the lightabsorption is rather significant and the absorption coefficient (alpha) reducesto half when CH3NH3+ is replaced with HC(NH2)2+ in the APbI3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C(NH2)2
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341611, 341617)
In particular, we find that the influence of the A-site cation on the lightabsorption is rather significant and the absorption coefficient (alpha) reducesto half when CH3NH3+ is replaced with HC(NH2)2+ in the APbI3 system.
Featurization terminated normally.
0.5714285714285714,0,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341625, 341627)
In particular, we find that the influence of the A-site cation on the lightabsorption is rather significant and the absorption coefficient (alpha) reducesto half when CH3NH3+ is replaced with HC(NH2)2+ in the APbI3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HC(NH2)2PbI3
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341668, 341678)
 Ourdensity functional theory (DFT) calculations reproduce all of the fineabsorption features observed in HC(NH2)2PbI3 and CH3NH3PbBr3, allowing theunique assignment of the interband transitions in the Brillouin zone.
Featurization terminated normally.
0.4166666666666667,0,0,0,0,0.08333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbBr3
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341682, 341690)
 Ourdensity functional theory (DFT) calculations reproduce all of the fineabsorption features observed in HC(NH2)2PbI3 and CH3NH3PbBr3, allowing theunique assignment of the interband transitions in the Brillouin zone.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341719, 341719)
 Incontrast to general understanding that the A-site cation involves weakly in theoptical process, our theoretical calculations reveal that the center cationplays a critical role in the interband transition and the absorption strengthin the visible region is modified by the strong A-X<missing VAR> interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HC(NH2)2PbI3
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341902, 341912)
 The universal rulesestablished in this study explain the large reduction of alpha in HC(NH2)2PbI3and predict CsPbI3 as the highest alpha material.
Featurization terminated normally.
0.4166666666666667,0,0,0,0,0.08333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPbI3
###Universal rules for visible-light absorption in hybrid perovskite materials|Masato Kato,Takemasa Fujiseki,Tetsuhiko Miyadera,Takeshi Sugita,Shohei Fujimoto,Masato Tamakoshi,Masayuki Chikamatsu,Hiroyuki Fujiwara###
(341919, 341922)
 The universal rulesestablished in this study explain the large reduction of alpha in HC(NH2)2PbI3and predict CsPbI3 as the highest alpha material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(341988, 341988)
 In organic bulk heterojunction solar cells, the open circuit voltage(Vmathrmoc) suffers from an ultra-high loss at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(342011, 342011)
 In organic bulk heterojunction solar cells, the open circuit voltage(Vmathrmoc) suffers from an ultra-high loss at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(342035, 342035)
 In thiswork we investigate the origin of the loss through calculating theVmathrmoc-T<missing VAR> plots with the device model method systematically andcomparing it with experimentally observed ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(342063, 342063)
 In thiswork we investigate the origin of the loss through calculating theVmathrmoc-T<missing VAR> plots with the device model method systematically andcomparing it with experimentally observed ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(342159, 342159)
 When the energetic disorder isincorporated into the model by considering the disorder-suppressed andtemperature-dependent charge carrier mobilities, it is found that fornonselective contacts the Vmathrmoc reduces drastically under the lowtemperature regime, while for selective contacts the Vmathrmoc keepsincreasing with the decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(342189, 342189)
 When the energetic disorder isincorporated into the model by considering the disorder-suppressed andtemperature-dependent charge carrier mobilities, it is found that fornonselective contacts the Vmathrmoc reduces drastically under the lowtemperature regime, while for selective contacts the Vmathrmoc keepsincreasing with the decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(342344, 342344)
 The main reason is revealed that asthe temperature decreases, the reduced mobilities give rise to low chargeextraction efficiency and small bimolecular recombination rate for thephotogenerated charge carriers, so that in the former case they can beextracted from the wrong electrode to form a leakage current which counteractsthe photocurrent and increases quickly with voltage, leading to the anomalousreduction of Vmathrmoc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(342349, 342349)
 In addition, it is revealed that the chargegeneration rate is slow-varying with temperature and does not inducesignificant Vmathrmoc loss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(342392, 342392)
 In addition, it is revealed that the chargegeneration rate is slow-varying with temperature and does not inducesignificant Vmathrmoc loss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Energetic disorder induced leakage current in organic bulk heterojunction solar cells: comprehending the ultra-high open circuit voltage loss at low temperatures|Wenchao Yang,Yongsong Luo,Pengfei Guo,Haibin Sun,Yao Yao###
(342418, 342418)
 This work also provides a comprehensivepicture for the Vmathrmoc behavior under varying device workingconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities|Dongwen Yang,Jian Lv,Xingang Zhao,Qiaoling Xu,Yuhao Fu,Yiqiang Zhan,Alex Zunger,Lijun Zhang###
(342452, 342452)
Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 7, 'years', 1],[74.0, 20, '%', 1]

As
###Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities|Dongwen Yang,Jian Lv,Xingang Zhao,Qiaoling Xu,Yuhao Fu,Yiqiang Zhan,Alex Zunger,Lijun Zhang###
(342542, 342542)
 As promising as thisclass of materials is, however, there are limitations associated with its poorlong-term stability, non-optimal band gap, presence of environmentally-toxic Pbelement, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 7, 'years', 1],[16.0, 20, '%', 1]

Pb
###Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities|Dongwen Yang,Jian Lv,Xingang Zhao,Qiaoling Xu,Yuhao Fu,Yiqiang Zhan,Alex Zunger,Lijun Zhang###
(342602, 342602)
 As promising as thisclass of materials is, however, there are limitations associated with its poorlong-term stability, non-optimal band gap, presence of environmentally-toxic Pbelement, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 7, 'years', 1],[76.0, 20, '%', 1]

Ge
###Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities|Dongwen Yang,Jian Lv,Xingang Zhao,Qiaoling Xu,Yuhao Fu,Yiqiang Zhan,Alex Zunger,Lijun Zhang###
(342741, 342741)
 We have identified in thismaterials selection process fourteen Ge and Sn-based materials with potentialsuperior bulk-material-intrinsic photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 7, 'years', 4],[215.0, 20, '%', 4]

Sn
###Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities|Dongwen Yang,Jian Lv,Xingang Zhao,Qiaoling Xu,Yuhao Fu,Yiqiang Zhan,Alex Zunger,Lijun Zhang###
(342745, 342745)
 We have identified in thismaterials selection process fourteen Ge and Sn-based materials with potentialsuperior bulk-material-intrinsic photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 7, 'years', 4],[219.0, 20, '%', 4]

H
###Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities|Dongwen Yang,Jian Lv,Xingang Zhao,Qiaoling Xu,Yuhao Fu,Yiqiang Zhan,Alex Zunger,Lijun Zhang###
(342787, 342787)
 A distinct class ofcompounds containing NH3COH+ with the organic molecule derived statesintriguingly emerging at band-edges is found.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 7, 'years', 5],[261.0, 20, '%', 5]

CH3NH3PbI3
###Temperature Dependence of the Energy Levels of Methylammonium Lead Iodide Perovskite from First Principles|Wissam A. Saidi,Samuel Poncé,Bartomeu Monserrat###
(343007, 343015)
 Here we determine fromfirst principles the effects of temperature on the band gap and band edges ofthe hybrid pervoskite CH3NH3PbI3 by accounting for electron-phononcoupling and thermal expansion.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Temperature Dependence of the Energy Levels of Methylammonium Lead Iodide Perovskite from First Principles|Wissam A. Saidi,Samuel Poncé,Bartomeu Monserrat###
(343045, 343045)
 From 290 to 380 K, the computed band gapchange of 40 meV coincides with the experimental change of 30-40 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Temperature Dependence of the Energy Levels of Methylammonium Lead Iodide Perovskite from First Principles|Wissam A. Saidi,Samuel Poncé,Bartomeu Monserrat###
(343064, 343064)
 From 290 to 380 K, the computed band gapchange of 40 meV coincides with the experimental change of 30-40 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Temperature Dependence of the Energy Levels of Methylammonium Lead Iodide Perovskite from First Principles|Wissam A. Saidi,Samuel Poncé,Bartomeu Monserrat###
(343083, 343083)
 From 290 to 380 K, the computed band gapchange of 40 meV coincides with the experimental change of 30-40 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Temperature Dependence of the Energy Levels of Methylammonium Lead Iodide Perovskite from First Principles|Wissam A. Saidi,Samuel Poncé,Bartomeu Monserrat###
(343101, 343109)
 Thecalculation of electron-phonon coupling in CH3NH3PbI3 is particularlyintricate, as the commonly used Allen-Heine-Cardona theory overestimates theband gap change with temperature, and excellent agreement with experiment isonly obtained when including high-order terms in the electron-phononinteraction.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPbI3
###Temperature Dependence of the Energy Levels of Methylammonium Lead Iodide Perovskite from First Principles|Wissam A. Saidi,Samuel Poncé,Bartomeu Monserrat###
(343265, 343268)
 We reach similar conclusions in the metal-halideperovskite CsPbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Local photo-excitation of shift current in noncentrosymmetric systems|Hiroaki Ishizuka,Naoto Nagaosa###
(343379, 343379)
 In conventional photoconductors, the electrons andholes created by light irradiation are separated by the external electricfield, resulting in a current flowing into electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Non-reciprocal Light-harvesting Nanoantennae Made by Nature|Julian Juhi-Lian Ting###
(344222, 344222)
 In particular it can predict what kind of particles should be used toseparate sunlight into a photovoltaically and thermally useful range to enhancethe efficiency of solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3Pb
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344346, 344352)
 The use of methylammonium (M<missing VAR>A) lead halide perovskites ceCH3NH3PbX<missing VAR>3 (X<missing VAR>I,Br, Cl) in perovskite solar cells (PSCs) has made great progress in performanceefficiency during recent years.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0.1111111111111111,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344358, 344358)
 The use of methylammonium (M<missing VAR>A) lead halide perovskites ceCH3NH3PbX<missing VAR>3 (X<missing VAR>I,Br, Cl) in perovskite solar cells (PSCs) has made great progress in performanceefficiency during recent years.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344362, 344362)
 The use of methylammonium (M<missing VAR>A) lead halide perovskites ceCH3NH3PbX<missing VAR>3 (X<missing VAR>I,Br, Cl) in perovskite solar cells (PSCs) has made great progress in performanceefficiency during recent years.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344365, 344365)
 The use of methylammonium (M<missing VAR>A) lead halide perovskites ceCH3NH3PbX<missing VAR>3 (X<missing VAR>I,Br, Cl) in perovskite solar cells (PSCs) has made great progress in performanceefficiency during recent years.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSCs)
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344376, 344380)
 The use of methylammonium (M<missing VAR>A) lead halide perovskites ceCH3NH3PbX<missing VAR>3 (X<missing VAR>I,Br, Cl) in perovskite solar cells (PSCs) has made great progress in performanceefficiency during recent years.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344418, 344420)
 However, the rapid decomposition of ceM<missing VAR>APbI3in humid environments hinders outdoor application of PSCs, and thus, acomprehensive understanding of the degradation mechanism is required.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344437, 344439)
 However, the rapid decomposition of ceM<missing VAR>APbI3in humid environments hinders outdoor application of PSCs, and thus, acomprehensive understanding of the degradation mechanism is required.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3Pb
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344509, 344515)
 To dothis, we investigate the effect of water intercalation and hydration of thedecomposition and ion migration of ceCH3NH3PbX<missing VAR>3 using first-principlescalculations.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0.1111111111111111,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344542, 344542)
 We find that water interacts with cePbX<missing VAR>6 and M<missing VAR>A throughhydrogen bonding, and the former interaction enhances gradually, while thelatter hardly changes when going from X<missing VAR>I to Br and to Cl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344590, 344590)
 We find that water interacts with cePbX<missing VAR>6 and M<missing VAR>A throughhydrogen bonding, and the former interaction enhances gradually, while thelatter hardly changes when going from X<missing VAR>I to Br and to Cl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344594, 344594)
 We find that water interacts with cePbX<missing VAR>6 and M<missing VAR>A throughhydrogen bonding, and the former interaction enhances gradually, while thelatter hardly changes when going from X<missing VAR>I to Br and to Cl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344600, 344600)
 We find that water interacts with cePbX<missing VAR>6 and M<missing VAR>A throughhydrogen bonding, and the former interaction enhances gradually, while thelatter hardly changes when going from X<missing VAR>I to Br and to Cl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344699, 344699)
 More importantly, the water intercalationgreatly reduces the activation energies for vacancy-mediated ion migration,which become higher going from X<missing VAR>I to Br and to Cl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344703, 344703)
 More importantly, the water intercalationgreatly reduces the activation energies for vacancy-mediated ion migration,which become higher going from X<missing VAR>I to Br and to Cl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344709, 344709)
 More importantly, the water intercalationgreatly reduces the activation energies for vacancy-mediated ion migration,which become higher going from X<missing VAR>I to Br and to Cl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Influence of water intercalation and hydration on chemical decomposition and ion transport in methylammonium lead halide perovskites|Un-Gi Jong,Chol-Jun Yu,Gum-Chol Ri,Andrew P. McMahon,Nicholas M. Harrison,Piers R. F. Barnes,Aron Walsh###
(344746, 344748)
 Our work indicates thathydration of halide perovskites must be avoided to prevent the degradation ofPSCs upon moisture exposure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Impact of Small Phonon Energies on the Charge-Carrier Lifetimes in Metal-Halide Perovskites|Thomas Kirchartz,Tom Markvart,Uwe Rau,David A. Egger###
(345062, 345064)
 We find that the lowphonon energies of M<missing VAR>APbI3 lead to a strong dependence of recombination rateson trap position, which can be readily deduced from the underlying physicaleffects determining non-radiative transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Control of Excitation Energy Transfer in Condensed Phase Molecular Systems by Floquet Engineering|Nguyen Thanh Phuc,Akihito Ishizaki###
(345570, 345570)
 As an effect of the environment on the Floquet engineering ofEET, the optimal driving frequency is found to depend on the relativemagnitudes of the system and environments<missing VAR> characteristic time scales with anobserved frequency shift when moving from the limit of slow environmentalfluctuations (inhomogeneous broadening limit) to that of fast fluctuations(homogeneous broadening limit).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(345706, 345706)
CM<missing VAR>OS-compatible controlled hyperdoping of silicon nanowires.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1, ',', 3]

OS
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(345708, 345709)
CM<missing VAR>OS-compatible controlled hyperdoping of silicon nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1, ',', 3]

Si
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(345811, 345811)
[1,2] Recently, bulk Si hyperdoped with chalcogensor transition metals has been demonstrated to be an appropriateintermediate-band material for Si-based short-wavelength infraredphotodetectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1, ',', 0]

Si
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(345849, 345849)
[1,2] Recently, bulk Si hyperdoped with chalcogensor transition metals has been demonstrated to be an appropriateintermediate-band material for Si-based short-wavelength infraredphotodetectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1, ',', 0]

Si
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(345937, 345937)
[3-5] Intermediate-band nanowires could potentially be usedinstead of bulk materials to overcome the Shockley-Queisser limit and toimprove efficiency in solar cells,[6-9] but fundamental scientific questions inhyperdoping Si nanowires require experimental verification.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1, ',', 1]

C
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(346017, 346017)
 Here, we show a CM<missing VAR>OS-compatible technique based onnon-equilibrium processing for the controlled doping of Si at the nanoscalewith dopant concentrations several orders of magnitude greater than theequilibrium solid solubility.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 1, ',', 3]

OS
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(346019, 346020)
 Here, we show a CM<missing VAR>OS-compatible technique based onnon-equilibrium processing for the controlled doping of Si at the nanoscalewith dopant concentrations several orders of magnitude greater than theequilibrium solid solubility.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 1, ',', 3]

Si
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(346047, 346047)
 Here, we show a CM<missing VAR>OS-compatible technique based onnon-equilibrium processing for the controlled doping of Si at the nanoscalewith dopant concentrations several orders of magnitude greater than theequilibrium solid solubility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 1, ',', 3]

Se
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(346149, 346149)
 Through the nanoscale spatially controlledimplantation of dopants, and a bottom-up template-assisted solid phaserecrystallization of the nanowires with the use of millisecond-flash lampannealing, we form Se-hyperdoped Si/SiO2 core/shell nanowires that have aroom-temperature sub-band gap optoelectronic photoresponse when configured as aphotoconductor device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 1, ',', 4]

Si/SiO2
###CMOS-compatible controlled hyperdoping of silicon nanowires|Yonder Berencén,Slawomir Prucnal,Wolfhard Möller,René Hübner,Lars Rebohle,Roman Böttger,Markus Glaser,Tommy Schönherr,Ye Yuan,Mao Wang,Yordan M. Georgiev,Artur Erbe,Alois Lugstein,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa###
(346153, 346157)
 Through the nanoscale spatially controlledimplantation of dopants, and a bottom-up template-assisted solid phaserecrystallization of the nanowires with the use of millisecond-flash lampannealing, we form Se-hyperdoped Si/SiO2 core/shell nanowires that have aroom-temperature sub-band gap optoelectronic photoresponse when configured as aphotoconductor device.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[352.0, 1, ',', 4]

Bi2Se3
###Topological insulator materials for advanced optoelectronic devices|Zengji Yue,Xiaolin Wang,Min Gu###
(346537, 346540)
 Specifically, Dirac plasmonexcitations have been observed in Bi2Se3 micro-ribbon arrays at T<missing VAR>Hzfrequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.5Sb0.5Te1.8Se1.2
###Topological insulator materials for advanced optoelectronic devices|Zengji Yue,Xiaolin Wang,Min Gu###
(346586, 346593)
 Ultraviolet and visible frequency plasmonics have been observed innanoslit and nanocone arrays of Bi1.5Sb0.5Te1.8Se1.2 crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.24,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Topological insulator materials for advanced optoelectronic devices|Zengji Yue,Xiaolin Wang,Min Gu###
(346611, 346614)
 Hightransparency has been observed in Bi2Se3 nanoplates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.5Sb0.5Te1.8Se1.2
###Topological insulator materials for advanced optoelectronic devices|Zengji Yue,Xiaolin Wang,Min Gu###
(346638, 346645)
 An ultrahigh refractiveindex has been observed in bulk Bi1.5Sb0.5Te1.8Se1.2 crystals as well as inSb2Te3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.24,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Topological insulator materials for advanced optoelectronic devices|Zengji Yue,Xiaolin Wang,Min Gu###
(346658, 346661)
 An ultrahigh refractiveindex has been observed in bulk Bi1.5Sb0.5Te1.8Se1.2 crystals as well as inSb2Te3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Topological insulator materials for advanced optoelectronic devices|Zengji Yue,Xiaolin Wang,Min Gu###
(346737, 346737)
 In this chapter, we focuson the excellent electronic and optical properties of topological insulatormaterials and their wide applications in advanced optoelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Nanowire lasers|C. Couteau,A. Larrue,C. Wilhelm,C. Soci###
(347243, 347243)
 We review principles and trends in the use of semiconductor nanowires (NWs)as gain media for stimulated emission and lasing.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Nanowire lasers|C. Couteau,A. Larrue,C. Wilhelm,C. Soci###
(347300, 347300)
 Semiconductor nanowires haverecently been widely studied for use in integrated optoelectronic devices, suchas LEDs, solar cells, and transistors.
EXCEPTION 3: IndexError for Ds
Abstract does not contain any numbers.

W0
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347796, 347797)
Using G<missing VAR>0W0 Level Alignment to Identify Catechols<missing VAR> Structure on TiO2(110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347815, 347816)
Using G<missing VAR>0W0 Level Alignment to Identify Catechols<missing VAR> Structure on TiO2(110).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347858, 347859)
 We perform state-of-the-art calculations for a prototypical dye sensitizedsolar cell catechol on rutile TiO2(110).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347900, 347902)
 Catechol is often used as ananchoring group for larger more complex organic and inorganic dyes on TiO2and forms a type II heterojunctions on TiO2(110).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347913, 347914)
 Catechol is often used as ananchoring group for larger more complex organic and inorganic dyes on TiO2and forms a type II heterojunctions on TiO2(110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347921, 347922)
 Catechol is often used as ananchoring group for larger more complex organic and inorganic dyes on TiO2and forms a type II heterojunctions on TiO2(110).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347928, 347928)
 In particular, we comparequasiparticle (Q<missing VAR>P) G<missing VAR>0W0 with hybrid exchange correlation functional (HSE)density functional theory (DFT) calculations for the catechol-rutileTiO2(110) interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347942, 347942)
 In particular, we comparequasiparticle (Q<missing VAR>P) G<missing VAR>0W0 with hybrid exchange correlation functional (HSE)density functional theory (DFT) calculations for the catechol-rutileTiO2(110) interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W0
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347947, 347948)
 In particular, we comparequasiparticle (Q<missing VAR>P) G<missing VAR>0W0 with hybrid exchange correlation functional (HSE)density functional theory (DFT) calculations for the catechol-rutileTiO2(110) interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347961, 347962)
 In particular, we comparequasiparticle (Q<missing VAR>P) G<missing VAR>0W0 with hybrid exchange correlation functional (HSE)density functional theory (DFT) calculations for the catechol-rutileTiO2(110) interface.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(347991, 347992)
 In particular, we comparequasiparticle (Q<missing VAR>P) G<missing VAR>0W0 with hybrid exchange correlation functional (HSE)density functional theory (DFT) calculations for the catechol-rutileTiO2(110) interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348000, 348000)
 In so doing, we provide a theoretical interpretation ofultraviolet photoemission spectroscopy (UPS) and inverse photoemissionspectroscopy (IPE<missing VAR>S) experiments for this prototypical system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(UPS)
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348026, 348030)
 In so doing, we provide a theoretical interpretation ofultraviolet photoemission spectroscopy (UPS) and inverse photoemissionspectroscopy (IPE<missing VAR>S) experiments for this prototypical system.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IP
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348042, 348043)
 In so doing, we provide a theoretical interpretation ofultraviolet photoemission spectroscopy (UPS) and inverse photoemissionspectroscopy (IPE<missing VAR>S) experiments for this prototypical system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348045, 348045)
 In so doing, we provide a theoretical interpretation ofultraviolet photoemission spectroscopy (UPS) and inverse photoemissionspectroscopy (IPE<missing VAR>S) experiments for this prototypical system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HO
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348093, 348094)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348096, 348096)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OH
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348101, 348102)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348104, 348104)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348126, 348126)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348131, 348131)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348133, 348133)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348135, 348135)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348139, 348139)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348141, 348141)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348143, 348143)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OH
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348164, 348165)
 Specifically, wedemonstrate that the position, presence, and intensity of peaks associated withcatechols<missing VAR> HOM<missing VAR>O, intermolecular OH-O bonds, and interfacial hydrogen bonds tothe surface bridging O atoms (ObrH-C and ObrH-O) may be used tofingerprint deprotonation of catechols<missing VAR> OH anchoring groups.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Using $G_0W_0$ Level Alignment to Identify Catechol's Structure on TiO$_2$(110)|Duncan J. Mowbray,Annapaola Migani###
(348225, 348226)
 Furthermore, ourresults suggest deprotonation of these groups, while being nearly isoenergeticat high coverages, may significantly increase the photovoltaic efficiency ofcatechol-TiO2(110) interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Plasmonic and silicon spherical nanoparticle anti-reflective coatings|K. V. Baryshnikova,M. I. Petrov,V. E. Babicheva,P. A. Belov###
(348467, 348467)
 In this work, we show for the first time thatblooming effect, that is zero reflection from the structure, with siliconcoatings originates from the interference of electric- and magnetic-dipoleresponses of nanoparticles with the wave reflected from the substrate, and werefer to it as substrate-mediated Kerker effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 30, '%', 3]

I
###Evaluation and determination of seven and five parameters of a photovoltaic generator by an iterative method|Ahmed Yahfdhou,Abdel Kader Mahmoud,Issakha Youm###
(348906, 348906)
The photovoltaic module is generally represented by an equivalent circuit whoseparameters are experimentally calculated by using the characteristiccurrent-tension, I-V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Evaluation and determination of seven and five parameters of a photovoltaic generator by an iterative method|Ahmed Yahfdhou,Abdel Kader Mahmoud,Issakha Youm###
(348908, 348908)
The photovoltaic module is generally represented by an equivalent circuit whoseparameters are experimentally calculated by using the characteristiccurrent-tension, I-V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Evaluation and determination of seven and five parameters of a photovoltaic generator by an iterative method|Ahmed Yahfdhou,Abdel Kader Mahmoud,Issakha Youm###
(348973, 348973)
 In the presentpaper; we are interested in the parametric characterization of a model in bothfollowing cases with single and two diodes, in order to plan the behavior ofthe photovoltaic generator under real functioning conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Optical Spintronics in Organic-Inorganic Perovskite Photovoltaics|Junwen Li,Paul M. Haney###
(349205, 349213)
 Organic-inorganic halide CH3NH3PbI3 solar cells have attractedenormous attention in recent years due to their remarkable power conversionefficiency.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Optical Spintronics in Organic-Inorganic Perovskite Photovoltaics|Junwen Li,Paul M. Haney###
(349299, 349299)
 In this work, we consider the spin-dependent optical response ofCH3NH3PbI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Optical Spintronics in Organic-Inorganic Perovskite Photovoltaics|Junwen Li,Paul M. Haney###
(349323, 349331)
 In this work, we consider the spin-dependent optical response ofCH3NH3PbI3.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Optical Spintronics in Organic-Inorganic Perovskite Photovoltaics|Junwen Li,Paul M. Haney###
(349400, 349408)
 We thenconsider diffusive transport of photogenerated charge and spin for a thinCH3NH3PbI3 layer with a passivated surface and an Ohmic, non-selectivecontact.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Investigation of the Photocurrent in Bulk Heterojunction Solar Cells|M. Limpinsel,A. Wagenpfahl,M. Mingebach,C. Deibel,V. Dyakonov###
(349670, 349672)
 We investigated the photocurrent in poly(3-hexylthiophene-2,5-diyl)(P3HT)[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) solar cells byapplying a pulsed measurement technique.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, -2, ',', 0],[4.0, 6, ',', 0]

C61
###Investigation of the Photocurrent in Bulk Heterojunction Solar Cells|M. Limpinsel,A. Wagenpfahl,M. Mingebach,C. Deibel,V. Dyakonov###
(349683, 349684)
 We investigated the photocurrent in poly(3-hexylthiophene-2,5-diyl)(P3HT)[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) solar cells byapplying a pulsed measurement technique.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, -2, ',', 0],[7.0, 6, ',', 0]

PCB
###Investigation of the Photocurrent in Bulk Heterojunction Solar Cells|M. Limpinsel,A. Wagenpfahl,M. Mingebach,C. Deibel,V. Dyakonov###
(349695, 349697)
 We investigated the photocurrent in poly(3-hexylthiophene-2,5-diyl)(P3HT)[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) solar cells byapplying a pulsed measurement technique.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, -2, ',', 0],[19.0, 6, ',', 0]

(POS)
###Investigation of the Photocurrent in Bulk Heterojunction Solar Cells|M. Limpinsel,A. Wagenpfahl,M. Mingebach,C. Deibel,V. Dyakonov###
(349737, 349741)
 For annealed samples, a point ofoptimal symmetry (POS) with a corresponding voltage VtextPOS of0.52--0.64 V could be determined.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, -2, ',', 1],[61.0, 6, ',', 1]

V
###Investigation of the Photocurrent in Bulk Heterojunction Solar Cells|M. Limpinsel,A. Wagenpfahl,M. Mingebach,C. Deibel,V. Dyakonov###
(349751, 349751)
 For annealed samples, a point ofoptimal symmetry (POS) with a corresponding voltage VtextPOS of0.52--0.64 V could be determined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, -2, ',', 1],[75.0, 6, ',', 1]

POS
###Investigation of the Photocurrent in Bulk Heterojunction Solar Cells|M. Limpinsel,A. Wagenpfahl,M. Mingebach,C. Deibel,V. Dyakonov###
(349753, 349755)
 For annealed samples, a point ofoptimal symmetry (POS) with a corresponding voltage VtextPOS of0.52--0.64 V could be determined.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, -2, ',', 1],[77.0, 6, ',', 1]

V
###Investigation of the Photocurrent in Bulk Heterojunction Solar Cells|M. Limpinsel,A. Wagenpfahl,M. Mingebach,C. Deibel,V. Dyakonov###
(349765, 349765)
 For annealed samples, a point ofoptimal symmetry (POS) with a corresponding voltage VtextPOS of0.52--0.64 V could be determined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, -2, ',', 1],[89.0, 6, ',', 1]

As
###Investigation of the Photocurrent in Bulk Heterojunction Solar Cells|M. Limpinsel,A. Wagenpfahl,M. Mingebach,C. Deibel,V. Dyakonov###
(349993, 349993)
 As this offset is crucial for the deviceperformance, we investigated its dependence on cathode material and thermaltreatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, -2, ',', 10],[317.0, 6, ',', 10]

GaN
###Oxidation of GaN: An ab initio thermodynamic approach|Adam J. Jackson,Aron Walsh###
(350086, 350087)
Oxidation of GaN An ab initio thermodynamic approach.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaN
###Oxidation of GaN: An ab initio thermodynamic approach|Adam J. Jackson,Aron Walsh###
(350100, 350101)
 GaN is a wide-bandgap semiconductor used in high-efficiency LEDs and solarcells.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Oxidation of GaN: An ab initio thermodynamic approach|Adam J. Jackson,Aron Walsh###
(350123, 350123)
 GaN is a wide-bandgap semiconductor used in high-efficiency LEDs and solarcells.
EXCEPTION 3: IndexError for Ds
In
Abstract does not contain any numbers.

B
###A multi-pathway model for Photosynthetic reaction center|M. Qin,H. Z Shen,X. X. Yi###
(350634, 350634)
 Here, we propose a biological quantum heat engine (BQHE)motivated by Photosystem rm II reaction center (PSrm II R<missing VAR>C) to describethe charge separation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###A multi-pathway model for Photosynthetic reaction center|M. Qin,H. Z Shen,X. X. Yi###
(350649, 350650)
 Here, we propose a biological quantum heat engine (BQHE)motivated by Photosystem rm II reaction center (PSrm II R<missing VAR>C) to describethe charge separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###A multi-pathway model for Photosynthetic reaction center|M. Qin,H. Z Shen,X. X. Yi###
(350657, 350658)
 Here, we propose a biological quantum heat engine (BQHE)motivated by Photosystem rm II reaction center (PSrm II R<missing VAR>C) to describethe charge separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###A multi-pathway model for Photosynthetic reaction center|M. Qin,H. Z Shen,X. X. Yi###
(350661, 350662)
 Here, we propose a biological quantum heat engine (BQHE)motivated by Photosystem rm II reaction center (PSrm II R<missing VAR>C) to describethe charge separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A multi-pathway model for Photosynthetic reaction center|M. Qin,H. Z Shen,X. X. Yi###
(350665, 350665)
 Here, we propose a biological quantum heat engine (BQHE)motivated by Photosystem rm II reaction center (PSrm II R<missing VAR>C) to describethe charge separation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A multi-pathway model for Photosynthetic reaction center|M. Qin,H. Z Shen,X. X. Yi###
(350816, 350816)
 The robustness of the BQHEagainst the charge recombination in natural PSrm II R<missing VAR>C and dephasing inducedby environments is also explored, and extension from two pathways to multiplepathways is made.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###A multi-pathway model for Photosynthetic reaction center|M. Qin,H. Z Shen,X. X. Yi###
(350834, 350835)
 The robustness of the BQHEagainst the charge recombination in natural PSrm II R<missing VAR>C and dephasing inducedby environments is also explored, and extension from two pathways to multiplepathways is made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###A multi-pathway model for Photosynthetic reaction center|M. Qin,H. Z Shen,X. X. Yi###
(350838, 350839)
 The robustness of the BQHEagainst the charge recombination in natural PSrm II R<missing VAR>C and dephasing inducedby environments is also explored, and extension from two pathways to multiplepathways is made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A multi-pathway model for Photosynthetic reaction center|M. Qin,H. Z Shen,X. X. Yi###
(350842, 350842)
 The robustness of the BQHEagainst the charge recombination in natural PSrm II R<missing VAR>C and dephasing inducedby environments is also explored, and extension from two pathways to multiplepathways is made.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Controlling the intensity of light in large areas at the interfaces of a scattering medium|Oluwafemi S. Ojambati,John T. Hosmer-Quint,Klaas-Jan Gorter,Allard P. Mosk,Willem L. Vos###
(351282, 351282)
 In addition, we find a qualitative evidence of along-range reflection-transmission correlation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Warming Up Density Functional Theory|Justin C. Smith,Francisca Sagredo,Kieron Burke###
(351560, 351560)
 In the last decade,applications of DFT in a new area, warm dense matter, have exploded.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 30, ',', 2]

Co/CoP
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(351883, 351886)
Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[371.0, 5.6, 'cm', 4],[374.0, 4, 'cm', 4],[377.0, 60, 'um', 4],[450.0, 16, 'ml', 5]

Co/CoP
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352014, 352017)
 Herein, we report a synthetic strategy toprepare freestanding hierarchically structured, nitrogen-doped nanoporousgraphitic carbon membranes functionalized with Janus-type Co/CoP nanocrystals(termed as HNDCM-Co/CoP), which were successfully applied as ahighly-efficient, binder-free electrode in hydrogen evolution reaction (HER).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[240.0, 5.6, 'cm', 2],[243.0, 4, 'cm', 2],[246.0, 60, 'um', 2],[319.0, 16, 'ml', 3]

HN
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352027, 352028)
 Herein, we report a synthetic strategy toprepare freestanding hierarchically structured, nitrogen-doped nanoporousgraphitic carbon membranes functionalized with Janus-type Co/CoP nanocrystals(termed as HNDCM-Co/CoP), which were successfully applied as ahighly-efficient, binder-free electrode in hydrogen evolution reaction (HER).
Featurization terminated normally.
0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 5.6, 'cm', 2],[232.0, 4, 'cm', 2],[235.0, 60, 'um', 2],[308.0, 16, 'ml', 3]

P
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352036, 352036)
 Herein, we report a synthetic strategy toprepare freestanding hierarchically structured, nitrogen-doped nanoporousgraphitic carbon membranes functionalized with Janus-type Co/CoP nanocrystals(termed as HNDCM-Co/CoP), which were successfully applied as ahighly-efficient, binder-free electrode in hydrogen evolution reaction (HER).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 5.6, 'cm', 2],[224.0, 4, 'cm', 2],[227.0, 60, 'um', 2],[300.0, 16, 'ml', 3]

H
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352073, 352073)
 Herein, we report a synthetic strategy toprepare freestanding hierarchically structured, nitrogen-doped nanoporousgraphitic carbon membranes functionalized with Janus-type Co/CoP nanocrystals(termed as HNDCM-Co/CoP), which were successfully applied as ahighly-efficient, binder-free electrode in hydrogen evolution reaction (HER).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 5.6, 'cm', 2],[187.0, 4, 'cm', 2],[190.0, 60, 'um', 2],[263.0, 16, 'ml', 3]

Co/CoP
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352132, 352135)
Benefited from multiple structural merits, such as high degree ofgraphitization, three-dimensionally interconnected micro-/meso-/macropores,uniform nitrogen-doping, well-dispersed Co/CoP nanocrystals as well as theconfinement effect of the thin carbon layer on the nanocrystals, HNDCM-Co/CoPexhibited superior electrocatalytic activity and long-term operation stabilityfor HER under both acid and alkaline conditions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[122.0, 5.6, 'cm', 1],[125.0, 4, 'cm', 1],[128.0, 60, 'um', 1],[201.0, 16, 'ml', 2]

HN
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352169, 352170)
Benefited from multiple structural merits, such as high degree ofgraphitization, three-dimensionally interconnected micro-/meso-/macropores,uniform nitrogen-doping, well-dispersed Co/CoP nanocrystals as well as theconfinement effect of the thin carbon layer on the nanocrystals, HNDCM-Co/CoPexhibited superior electrocatalytic activity and long-term operation stabilityfor HER under both acid and alkaline conditions.
Featurization terminated normally.
0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 5.6, 'cm', 1],[90.0, 4, 'cm', 1],[93.0, 60, 'um', 1],[166.0, 16, 'ml', 2]

Co/CoP
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352175, 352178)
Benefited from multiple structural merits, such as high degree ofgraphitization, three-dimensionally interconnected micro-/meso-/macropores,uniform nitrogen-doping, well-dispersed Co/CoP nanocrystals as well as theconfinement effect of the thin carbon layer on the nanocrystals, HNDCM-Co/CoPexhibited superior electrocatalytic activity and long-term operation stabilityfor HER under both acid and alkaline conditions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[79.0, 5.6, 'cm', 1],[82.0, 4, 'cm', 1],[85.0, 60, 'um', 1],[158.0, 16, 'ml', 2]

H
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352202, 352202)
Benefited from multiple structural merits, such as high degree ofgraphitization, three-dimensionally interconnected micro-/meso-/macropores,uniform nitrogen-doping, well-dispersed Co/CoP nanocrystals as well as theconfinement effect of the thin carbon layer on the nanocrystals, HNDCM-Co/CoPexhibited superior electrocatalytic activity and long-term operation stabilityfor HER under both acid and alkaline conditions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 5.6, 'cm', 1],[58.0, 4, 'cm', 1],[61.0, 60, 'um', 1],[134.0, 16, 'ml', 2]

As
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352219, 352219)
 As a proof-of-concept ofpractical usage, a macroscopic piece of HNDCM-Co/CoP of 5.6 cm x<missing VAR> 4 cm x<missing VAR> 60 umin size was prepared in our laboratory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 5.6, 'cm', 0],[41.0, 4, 'cm', 0],[44.0, 60, 'um', 0],[117.0, 16, 'ml', 1]

HN
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352245, 352246)
 As a proof-of-concept ofpractical usage, a macroscopic piece of HNDCM-Co/CoP of 5.6 cm x<missing VAR> 4 cm x<missing VAR> 60 umin size was prepared in our laboratory.
Featurization terminated normally.
0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 5.6, 'cm', 0],[14.0, 4, 'cm', 0],[17.0, 60, 'um', 0],[90.0, 16, 'ml', 1]

Co/CoP
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352251, 352254)
 As a proof-of-concept ofpractical usage, a macroscopic piece of HNDCM-Co/CoP of 5.6 cm x<missing VAR> 4 cm x<missing VAR> 60 umin size was prepared in our laboratory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[3.0, 5.6, 'cm', 0],[6.0, 4, 'cm', 0],[9.0, 60, 'um', 0],[82.0, 16, 'ml', 1]

H
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352307, 352307)
 Driven by a solar cell,electroreduction of water in alkaline condition (p<missing VAR>H 14) was performed, and H2has been produced at a rate of 16 ml/min, demonstrating its potential asreal-life energy conversion systems.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 5.6, 'cm', 1],[47.0, 4, 'cm', 1],[44.0, 60, 'um', 1],[29.0, 16, 'ml', 0]

H2
###Nitrogen-doped Nanoporous Carbon Membranes Functionalized with Co/CoP Janus-type nanocrystals as Hydrogen Evolution Electrode in Both Acid and Alkaline Environment|Hong Wang,Shixiong Min,Qiang Wang,Debao Li,Gilberto Casillas,Chun Ma,Yangyang Li,Zhixiong Li,Lain-Jong Li,Jiayin Yuan,Markus Antonietti,Tom Wu###
(352319, 352320)
 Driven by a solar cell,electroreduction of water in alkaline condition (p<missing VAR>H 14) was performed, and H2has been produced at a rate of 16 ml/min, demonstrating its potential asreal-life energy conversion systems.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 5.6, 'cm', 1],[59.0, 4, 'cm', 1],[56.0, 60, 'um', 1],[16.0, 16, 'ml', 0]

C
###Microscopic structure differences in CZTSe quaternary alloys prepared by different techniques revealed by spatially-resolved laser-induced-modification Raman spectroscopy|Qiong Chen,Sergio Bernardi,Yong Zhang###
(352377, 352377)
Microscopic structure differences in CZTSe quaternary alloys prepared by different techniques revealed by spatially-resolved laser-induced-modification Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Microscopic structure differences in CZTSe quaternary alloys prepared by different techniques revealed by spatially-resolved laser-induced-modification Raman spectroscopy|Qiong Chen,Sergio Bernardi,Yong Zhang###
(352380, 352380)
Microscopic structure differences in CZTSe quaternary alloys prepared by different techniques revealed by spatially-resolved laser-induced-modification Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Microscopic structure differences in CZTSe quaternary alloys prepared by different techniques revealed by spatially-resolved laser-induced-modification Raman spectroscopy|Qiong Chen,Sergio Bernardi,Yong Zhang###
(352488, 352488)
 While producing comparable efficiencies and showing similar properties whenprobed by conventional techniques, such as Raman, photoluminescence and X<missing VAR>-raydiffraction, two thin film solar cell materials with complex structures, suchas quaternary compound CZTSe, may in fact differ significantly in theirmicroscopic structures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Microscopic structure differences in CZTSe quaternary alloys prepared by different techniques revealed by spatially-resolved laser-induced-modification Raman spectroscopy|Qiong Chen,Sergio Bernardi,Yong Zhang###
(352491, 352491)
 While producing comparable efficiencies and showing similar properties whenprobed by conventional techniques, such as Raman, photoluminescence and X<missing VAR>-raydiffraction, two thin film solar cell materials with complex structures, suchas quaternary compound CZTSe, may in fact differ significantly in theirmicroscopic structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Microscopic structure differences in CZTSe quaternary alloys prepared by different techniques revealed by spatially-resolved laser-induced-modification Raman spectroscopy|Qiong Chen,Sergio Bernardi,Yong Zhang###
(352514, 352514)
 In this work, laser induced modification Ramanspectroscopy, coupled with high spatial resolution and high temperaturecapability, is demonstrated as an effective tool to obtain important structureinformation beyond that the conventional characterization techniques can offer,and thus to reveal the microscopic scale variations between nominally similaralloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Microscopic structure differences in CZTSe quaternary alloys prepared by different techniques revealed by spatially-resolved laser-induced-modification Raman spectroscopy|Qiong Chen,Sergio Bernardi,Yong Zhang###
(352623, 352623)
 Specifically, CZTSe films prepared by sputtering and co-evaporationmethods that exhibited similar Raman and XRD features were found to behave verydifferently under high laser power and high temperature Raman probe, becausethe differences in their microscopic structures lead to different structuremodifications in response to the external stimuli, such as light illuminationand temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Microscopic structure differences in CZTSe quaternary alloys prepared by different techniques revealed by spatially-resolved laser-induced-modification Raman spectroscopy|Qiong Chen,Sergio Bernardi,Yong Zhang###
(352626, 352626)
 Specifically, CZTSe films prepared by sputtering and co-evaporationmethods that exhibited similar Raman and XRD features were found to behave verydifferently under high laser power and high temperature Raman probe, becausethe differences in their microscopic structures lead to different structuremodifications in response to the external stimuli, such as light illuminationand temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(352831, 352831)
New 3,3-(ethane-1, 2-diylidene)bis(indolin-2-one) (E<missing VAR>BI)-based small molecule semiconductors for organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, ',', 0],[20.0, -1, ',', 0],[52.0, 3, ',', 1],[58.0, -1, ',', 1],[218.0, 0.021, 'cm', 2],[362.0, 1.92, '%', 4]

I
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(352908, 352908)
 A series of donor-acceptor-donor (D<missing VAR>-A-D) structured small-molecule compounds,with 3,3-(ethane-1,2-diylidene)bis(indolin-2-one) (E<missing VAR>BI) as a novel electronacceptor building block coupled with various electron donor end-cappingmoieties (thiophene, bithiophene and benzofuran), were synthesized andcharacterized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3, ',', 1],[97.0, -1, ',', 1],[25.0, 3, ',', 0],[19.0, -1, ',', 0],[141.0, 0.021, 'cm', 1],[285.0, 1.92, '%', 3]

BI
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(352982, 352983)
 When the fused-ring benzofuran is combined to E<missing VAR>BI (E<missing VAR>BI-BF), themolecules displayed a perfectly planar conformation and afforded the bestcharge tranport properties among these E<missing VAR>BI compounds with a hole mobility of upto 0.021 cm2 V-1 s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3, ',', 2],[171.0, -1, ',', 2],[99.0, 3, ',', 1],[93.0, -1, ',', 1],[66.0, 0.021, 'cm', 0],[210.0, 1.92, '%', 2]

BI
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(352987, 352988)
 When the fused-ring benzofuran is combined to E<missing VAR>BI (E<missing VAR>BI-BF), themolecules displayed a perfectly planar conformation and afforded the bestcharge tranport properties among these E<missing VAR>BI compounds with a hole mobility of upto 0.021 cm2 V-1 s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 2],[176.0, -1, ',', 2],[104.0, 3, ',', 1],[98.0, -1, ',', 1],[61.0, 0.021, 'cm', 0],[205.0, 1.92, '%', 2]

F
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(352991, 352991)
 When the fused-ring benzofuran is combined to E<missing VAR>BI (E<missing VAR>BI-BF), themolecules displayed a perfectly planar conformation and afforded the bestcharge tranport properties among these E<missing VAR>BI compounds with a hole mobility of upto 0.021 cm2 V-1 s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3, ',', 2],[180.0, -1, ',', 2],[108.0, 3, ',', 1],[102.0, -1, ',', 1],[58.0, 0.021, 'cm', 0],[202.0, 1.92, '%', 2]

BI
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353030, 353031)
 When the fused-ring benzofuran is combined to E<missing VAR>BI (E<missing VAR>BI-BF), themolecules displayed a perfectly planar conformation and afforded the bestcharge tranport properties among these E<missing VAR>BI compounds with a hole mobility of upto 0.021 cm2 V-1 s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 3, ',', 2],[219.0, -1, ',', 2],[147.0, 3, ',', 1],[141.0, -1, ',', 1],[18.0, 0.021, 'cm', 0],[162.0, 1.92, '%', 2]

V
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353052, 353052)
 When the fused-ring benzofuran is combined to E<missing VAR>BI (E<missing VAR>BI-BF), themolecules displayed a perfectly planar conformation and afforded the bestcharge tranport properties among these E<missing VAR>BI compounds with a hole mobility of upto 0.021 cm2 V-1 s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 3, ',', 2],[241.0, -1, ',', 2],[169.0, 3, ',', 1],[163.0, -1, ',', 1],[3.0, 0.021, 'cm', 0],[141.0, 1.92, '%', 2]

BI
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353064, 353065)
 All E<missing VAR>BI-based small molecules were used as donor materialalong with a PC61BM<missing VAR> acceptor for the fabrication of solution-processedbulk-heterojunction (BHJ) solar cells.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 3, ',', 3],[253.0, -1, ',', 3],[181.0, 3, ',', 2],[175.0, -1, ',', 2],[15.0, 0.021, 'cm', 1],[128.0, 1.92, '%', 1]

PC61B
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353090, 353093)
 All E<missing VAR>BI-based small molecules were used as donor materialalong with a PC61BM<missing VAR> acceptor for the fabrication of solution-processedbulk-heterojunction (BHJ) solar cells.
Featurization terminated normally.
0,0,0,0,0.015873015873015872,0.9682539682539683,0,0,0,0,0,0,0,0,0.015873015873015872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 3, ',', 3],[279.0, -1, ',', 3],[207.0, 3, ',', 2],[201.0, -1, ',', 2],[41.0, 0.021, 'cm', 1],[100.0, 1.92, '%', 1]

BH
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353116, 353117)
 All E<missing VAR>BI-based small molecules were used as donor materialalong with a PC61BM<missing VAR> acceptor for the fabrication of solution-processedbulk-heterojunction (BHJ) solar cells.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 3, ',', 3],[305.0, -1, ',', 3],[233.0, 3, ',', 2],[227.0, -1, ',', 2],[67.0, 0.021, 'cm', 1],[76.0, 1.92, '%', 1]

BI
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353146, 353147)
 The best performing photovoltaic devicesare based on the E<missing VAR>BI derivative using the bithiophene end-capping moiety(E<missing VAR>BI-2T) with a maximum power conversion efficiency (PCE) of 1.92%, owing tothe broad absorption spectra of E<missing VAR>BI-2T<missing VAR> and the appropriate morphology of theBHJ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 3, ',', 4],[335.0, -1, ',', 4],[263.0, 3, ',', 3],[257.0, -1, ',', 3],[97.0, 0.021, 'cm', 2],[46.0, 1.92, '%', 0]

BI
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353166, 353167)
 The best performing photovoltaic devicesare based on the E<missing VAR>BI derivative using the bithiophene end-capping moiety(E<missing VAR>BI-2T) with a maximum power conversion efficiency (PCE) of 1.92%, owing tothe broad absorption spectra of E<missing VAR>BI-2T<missing VAR> and the appropriate morphology of theBHJ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 3, ',', 4],[355.0, -1, ',', 4],[283.0, 3, ',', 3],[277.0, -1, ',', 3],[117.0, 0.021, 'cm', 2],[26.0, 1.92, '%', 0]

PC
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353186, 353187)
 The best performing photovoltaic devicesare based on the E<missing VAR>BI derivative using the bithiophene end-capping moiety(E<missing VAR>BI-2T) with a maximum power conversion efficiency (PCE) of 1.92%, owing tothe broad absorption spectra of E<missing VAR>BI-2T<missing VAR> and the appropriate morphology of theBHJ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 3, ',', 4],[375.0, -1, ',', 4],[303.0, 3, ',', 3],[297.0, -1, ',', 3],[137.0, 0.021, 'cm', 2],[6.0, 1.92, '%', 0]

BI
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353213, 353214)
 The best performing photovoltaic devicesare based on the E<missing VAR>BI derivative using the bithiophene end-capping moiety(E<missing VAR>BI-2T) with a maximum power conversion efficiency (PCE) of 1.92%, owing tothe broad absorption spectra of E<missing VAR>BI-2T<missing VAR> and the appropriate morphology of theBHJ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 3, ',', 4],[402.0, -1, ',', 4],[330.0, 3, ',', 3],[324.0, -1, ',', 3],[164.0, 0.021, 'cm', 2],[20.0, 1.92, '%', 0]

BH
###New 3,3'-(ethane-1, 2-diylidene)bis(indolin-2-one) (EBI)-based small molecule semiconductors for organic solar cells|Mylene Le Borgne,Jesse Quinn,Jaime Martín,Natalie Stingelin,Yuning Li,Guillaume Wantz###
(353232, 353233)
 The best performing photovoltaic devicesare based on the E<missing VAR>BI derivative using the bithiophene end-capping moiety(E<missing VAR>BI-2T) with a maximum power conversion efficiency (PCE) of 1.92%, owing tothe broad absorption spectra of E<missing VAR>BI-2T<missing VAR> and the appropriate morphology of theBHJ<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[427.0, 3, ',', 4],[421.0, -1, ',', 4],[349.0, 3, ',', 3],[343.0, -1, ',', 3],[183.0, 0.021, 'cm', 2],[39.0, 1.92, '%', 0]

MoS2
###Optoelectronic properties of defective MoS$_2$ and WS$_2$ monolayers|Saboura Salehi,Alireza Saffarzadeh###
(353333, 353335)
Optoelectronic properties of defective MoS2 and WS2 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS2
###Optoelectronic properties of defective MoS$_2$ and WS$_2$ monolayers|Saboura Salehi,Alireza Saffarzadeh###
(353339, 353341)
Optoelectronic properties of defective MoS2 and WS2 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Optoelectronic properties of defective MoS$_2$ and WS$_2$ monolayers|Saboura Salehi,Alireza Saffarzadeh###
(353379, 353381)
 We theoretically explore the effect of metal and disulphur vacancies onelectronic and optical properties of MoS2 and WS2 monolayers based on aSlater-Koster tight-binding model and including the spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS2
###Optoelectronic properties of defective MoS$_2$ and WS$_2$ monolayers|Saboura Salehi,Alireza Saffarzadeh###
(353385, 353387)
 We theoretically explore the effect of metal and disulphur vacancies onelectronic and optical properties of MoS2 and WS2 monolayers based on aSlater-Koster tight-binding model and including the spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Optoelectronic properties of defective MoS$_2$ and WS$_2$ monolayers|Saboura Salehi,Alireza Saffarzadeh###
(353586, 353586)
 We find that Mo and W vacancies contribute mostly in thelow-energy optical spectrum, while the S2 vacancies enhance the opticalconductivity mainly in the visible range of the spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Optoelectronic properties of defective MoS$_2$ and WS$_2$ monolayers|Saboura Salehi,Alireza Saffarzadeh###
(353590, 353590)
 We find that Mo and W vacancies contribute mostly in thelow-energy optical spectrum, while the S2 vacancies enhance the opticalconductivity mainly in the visible range of the spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S2
###Optoelectronic properties of defective MoS$_2$ and WS$_2$ monolayers|Saboura Salehi,Alireza Saffarzadeh###
(353616, 353617)
 We find that Mo and W vacancies contribute mostly in thelow-energy optical spectrum, while the S2 vacancies enhance the opticalconductivity mainly in the visible range of the spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Optoelectronic properties of defective MoS$_2$ and WS$_2$ monolayers|Saboura Salehi,Alireza Saffarzadeh###
(353675, 353677)
 This suggests thatdepending on the type of vacancy, the atomic defects in MoS2 and WS2monolayers may increase the efficiency of solar cells used in photovoltaicsystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS2
###Optoelectronic properties of defective MoS$_2$ and WS$_2$ monolayers|Saboura Salehi,Alireza Saffarzadeh###
(353681, 353683)
 This suggests thatdepending on the type of vacancy, the atomic defects in MoS2 and WS2monolayers may increase the efficiency of solar cells used in photovoltaicsystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Enhanced stability of 2D organic-inorganic halide perovskites by doping and heterostructure engineering|Rahul Singh,Prashant Singh,Ganesh Balasubramanian###
(353971, 353973)
 We show that theenergetic stability of two-dimensional organic-inorganic halide perovskites canbe significantly enhanced by chemically depositing MoS2 monolayer as aprecursor in the system by heterostructure engineering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 2, 'D', 4],[55.0, 2, 'D', 1]

HOI
###Acoustic Phonon Lifetimes Limit Thermal Transport in Methylammonium Lead Iodide|Aryeh Gold-Parker,Peter M. Gehring,Jonathan M. Skelton,Ian C. Smith,Dan Parshall,Jarvist M. Frost,Hemamala I. Karunadasa,Aron Walsh,Michael F. Toney###
(354150, 354152)
 Hybrid organic-inorganic perovskites (HOIPs) have become an important classof semiconductors for solar cells and other optoelectronic applications.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HOI
###Acoustic Phonon Lifetimes Limit Thermal Transport in Methylammonium Lead Iodide|Aryeh Gold-Parker,Peter M. Gehring,Jonathan M. Skelton,Ian C. Smith,Dan Parshall,Jarvist M. Frost,Hemamala I. Karunadasa,Aron Walsh,Michael F. Toney###
(354229, 354231)
Electron-phonon coupling plays a critical role in all optoelectronic devices,and although the lattice dynamics and phonon frequencies of HOIPs have beenwell studied, little attention has been given to phonon lifetimes.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Acoustic Phonon Lifetimes Limit Thermal Transport in Methylammonium Lead Iodide|Aryeh Gold-Parker,Peter M. Gehring,Jonathan M. Skelton,Ian C. Smith,Dan Parshall,Jarvist M. Frost,Hemamala I. Karunadasa,Aron Walsh,Michael F. Toney###
(354303, 354303)
 We reportthe first high-precision measurements of acoustic phonon lifetimes in thehybrid perovskite methylammonium lead iodide (M<missing VAR>API), using inelastic neutronspectroscopy to provide high energy resolution and fully deuterated singlecrystals to reduce incoherent scattering from hydrogen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Acoustic Phonon Lifetimes Limit Thermal Transport in Methylammonium Lead Iodide|Aryeh Gold-Parker,Peter M. Gehring,Jonathan M. Skelton,Ian C. Smith,Dan Parshall,Jarvist M. Frost,Hemamala I. Karunadasa,Aron Walsh,Michael F. Toney###
(354523, 354524)
 Suchshort lifetimes have significant implications for electron-phonon coupling inM<missing VAR>API and other HOIPs, with direct impacts on optoelectronic devices both in thecooling of hot carriers and in the transport and recombination of band edgecarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HOI
###Acoustic Phonon Lifetimes Limit Thermal Transport in Methylammonium Lead Iodide|Aryeh Gold-Parker,Peter M. Gehring,Jonathan M. Skelton,Ian C. Smith,Dan Parshall,Jarvist M. Frost,Hemamala I. Karunadasa,Aron Walsh,Michael F. Toney###
(354530, 354532)
 Suchshort lifetimes have significant implications for electron-phonon coupling inM<missing VAR>API and other HOIPs, with direct impacts on optoelectronic devices both in thecooling of hot carriers and in the transport and recombination of band edgecarriers.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HOI
###Acoustic Phonon Lifetimes Limit Thermal Transport in Methylammonium Lead Iodide|Aryeh Gold-Parker,Peter M. Gehring,Jonathan M. Skelton,Ian C. Smith,Dan Parshall,Jarvist M. Frost,Hemamala I. Karunadasa,Aron Walsh,Michael F. Toney###
(354599, 354601)
 These findings illustrate a fundamental difference between HOIPs andconventional photovoltaic semiconductors and demonstrate the importance ofunderstanding lattice dynamics in the effort to develop metal halide perovskiteoptoelectronic devices.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354742, 354742)
 The charge accumulation properties of p-i-n<missing VAR> perovskite solar cells wereinvestigated using three representative organic and inorganic hole transportinglayer (HT<missing VAR>Ls) a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT<missing VAR>PSS, Al 4083), b) copper-doped nickel oxide (CuNiOx) and c) Copperoxide (CuO).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3, ',', 0],[362.0, 8.44, '%', 4],[372.0, 11.45, '%', 4],[383.0, 15.3, '%', 4]

P
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354766, 354766)
 The charge accumulation properties of p-i-n<missing VAR> perovskite solar cells wereinvestigated using three representative organic and inorganic hole transportinglayer (HT<missing VAR>Ls) a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT<missing VAR>PSS, Al 4083), b) copper-doped nickel oxide (CuNiOx) and c) Copperoxide (CuO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, ',', 0],[338.0, 8.44, '%', 4],[348.0, 11.45, '%', 4],[359.0, 15.3, '%', 4]

O
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354769, 354769)
 The charge accumulation properties of p-i-n<missing VAR> perovskite solar cells wereinvestigated using three representative organic and inorganic hole transportinglayer (HT<missing VAR>Ls) a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT<missing VAR>PSS, Al 4083), b) copper-doped nickel oxide (CuNiOx) and c) Copperoxide (CuO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 3, ',', 0],[335.0, 8.44, '%', 4],[345.0, 11.45, '%', 4],[356.0, 15.3, '%', 4]

PSS
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354771, 354773)
 The charge accumulation properties of p-i-n<missing VAR> perovskite solar cells wereinvestigated using three representative organic and inorganic hole transportinglayer (HT<missing VAR>Ls) a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT<missing VAR>PSS, Al 4083), b) copper-doped nickel oxide (CuNiOx) and c) Copperoxide (CuO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 3, ',', 0],[331.0, 8.44, '%', 4],[341.0, 11.45, '%', 4],[352.0, 15.3, '%', 4]

Al
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354776, 354776)
 The charge accumulation properties of p-i-n<missing VAR> perovskite solar cells wereinvestigated using three representative organic and inorganic hole transportinglayer (HT<missing VAR>Ls) a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT<missing VAR>PSS, Al 4083), b) copper-doped nickel oxide (CuNiOx) and c) Copperoxide (CuO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3, ',', 0],[328.0, 8.44, '%', 4],[338.0, 11.45, '%', 4],[349.0, 15.3, '%', 4]

CuNi
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354794, 354795)
 The charge accumulation properties of p-i-n<missing VAR> perovskite solar cells wereinvestigated using three representative organic and inorganic hole transportinglayer (HT<missing VAR>Ls) a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT<missing VAR>PSS, Al 4083), b) copper-doped nickel oxide (CuNiOx) and c) Copperoxide (CuO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, ',', 0],[309.0, 8.44, '%', 4],[319.0, 11.45, '%', 4],[330.0, 15.3, '%', 4]

(CuO)
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354809, 354812)
 The charge accumulation properties of p-i-n<missing VAR> perovskite solar cells wereinvestigated using three representative organic and inorganic hole transportinglayer (HT<missing VAR>Ls) a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT<missing VAR>PSS, Al 4083), b) copper-doped nickel oxide (CuNiOx) and c) Copperoxide (CuO).
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 3, ',', 0],[292.0, 8.44, '%', 4],[302.0, 11.45, '%', 4],[313.0, 15.3, '%', 4]

H
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354848, 354848)
 Through impedance spectroscopy analysis and modelling it is shownthat charge accumulation is decreased in the HTL/Perovskite interface, betweenPEDOT<missing VAR>PSS to CuNiOx and CuO respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 3, ',', 1],[256.0, 8.44, '%', 3],[266.0, 11.45, '%', 3],[277.0, 15.3, '%', 3]

P
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354860, 354860)
 Through impedance spectroscopy analysis and modelling it is shownthat charge accumulation is decreased in the HTL/Perovskite interface, betweenPEDOT<missing VAR>PSS to CuNiOx and CuO respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 3, ',', 1],[244.0, 8.44, '%', 3],[254.0, 11.45, '%', 3],[265.0, 15.3, '%', 3]

O
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354863, 354863)
 Through impedance spectroscopy analysis and modelling it is shownthat charge accumulation is decreased in the HTL/Perovskite interface, betweenPEDOT<missing VAR>PSS to CuNiOx and CuO respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 3, ',', 1],[241.0, 8.44, '%', 3],[251.0, 11.45, '%', 3],[262.0, 15.3, '%', 3]

PSS
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354865, 354867)
 Through impedance spectroscopy analysis and modelling it is shownthat charge accumulation is decreased in the HTL/Perovskite interface, betweenPEDOT<missing VAR>PSS to CuNiOx and CuO respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 3, ',', 1],[237.0, 8.44, '%', 3],[247.0, 11.45, '%', 3],[258.0, 15.3, '%', 3]

CuNi
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354871, 354872)
 Through impedance spectroscopy analysis and modelling it is shownthat charge accumulation is decreased in the HTL/Perovskite interface, betweenPEDOT<missing VAR>PSS to CuNiOx and CuO respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3, ',', 1],[232.0, 8.44, '%', 3],[242.0, 11.45, '%', 3],[253.0, 15.3, '%', 3]

CuO
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354877, 354878)
 Through impedance spectroscopy analysis and modelling it is shownthat charge accumulation is decreased in the HTL/Perovskite interface, betweenPEDOT<missing VAR>PSS to CuNiOx and CuO respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 3, ',', 1],[226.0, 8.44, '%', 3],[236.0, 11.45, '%', 3],[247.0, 15.3, '%', 3]

H
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354960, 354960)
 This was indicative from thedecrease in double layer capacitance (Cdl) and interfacial charge accumulationcapacitance (Cel), resulting in an increase to recombination resistance (Rrec),thus decreased charge recombination events between the three HT<missing VAR>Ls.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 3, ',', 2],[144.0, 8.44, '%', 2],[154.0, 11.45, '%', 2],[165.0, 15.3, '%', 2]

F
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(354968, 354968)
 Through AFM<missing VAR>measurements it is also shown that the reduced recombination events (followedby the increase in Rrec) is also a result of increased grain size between thethree HT<missing VAR>Ls, thus reduction in the grain boundaries area.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 3, ',', 3],[136.0, 8.44, '%', 1],[146.0, 11.45, '%', 1],[157.0, 15.3, '%', 1]

H
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(355030, 355030)
 Through AFM<missing VAR>measurements it is also shown that the reduced recombination events (followedby the increase in Rrec) is also a result of increased grain size between thethree HT<missing VAR>Ls, thus reduction in the grain boundaries area.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 3, ',', 3],[74.0, 8.44, '%', 1],[84.0, 11.45, '%', 1],[95.0, 15.3, '%', 1]

H
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(355065, 355065)
 These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 3, ',', 4],[39.0, 8.44, '%', 0],[49.0, 11.45, '%', 0],[60.0, 15.3, '%', 0]

P
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(355094, 355094)
 These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 3, ',', 4],[10.0, 8.44, '%', 0],[20.0, 11.45, '%', 0],[31.0, 15.3, '%', 0]

O
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(355097, 355097)
 These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 3, ',', 4],[7.0, 8.44, '%', 0],[17.0, 11.45, '%', 0],[28.0, 15.3, '%', 0]

PSS
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(355099, 355101)
 These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 3, ',', 4],[3.0, 8.44, '%', 0],[13.0, 11.45, '%', 0],[24.0, 15.3, '%', 0]

CuNi
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(355109, 355110)
 These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 3, ',', 4],[5.0, 8.44, '%', 0],[4.0, 11.45, '%', 0],[15.0, 15.3, '%', 0]

CuO
###The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells|Fedros Galatopoulos,Achilleas Savva,Ioannis T. Papadas,Stelios A. Choulis###
(355121, 355122)
 These chargeaccumulation properties of the three HT<missing VAR>Ls have resulted in an increase to thepower conversion efficiency between the PEDOT<missing VAR>PSS (8.44%), CuNiOx (11.45%) andCuO (15.3%)-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 3, ',', 4],[17.0, 8.44, '%', 0],[7.0, 11.45, '%', 0],[3.0, 15.3, '%', 0]

In
###Fast and robust detection of solar modules in electroluminescence images|Mathis Hoffmann,Bernd Doll,Florian Talkenberg,Christoph J. Brabec,Andreas K. Maier,Vincent Christlein###
(355418, 355418)
 In addition, themethod is able to detect the modules under perspective distortion and inscenarios, where multiple modules are visible in the image.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355677, 355677)
 In-depth understanding of the optoelectronic andtransport properties of such materials are vital for practical implementationof the same.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 3, ',', 2]

FP
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355787, 355788)
 Here, we have performed first principlecalculations with FP-L<missing VAR>APW method for the orthorhombic rubidium lead halidestructures (chRbPbX<missing VAR>3, where chX<missing VAR>I,Br,Cl) to study the optoelectronic andtransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 3, ',', 0]

PW
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355792, 355793)
 Here, we have performed first principlecalculations with FP-L<missing VAR>APW method for the orthorhombic rubidium lead halidestructures (chRbPbX<missing VAR>3, where chX<missing VAR>I,Br,Cl) to study the optoelectronic andtransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3, ',', 0]

RbPb
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355814, 355815)
 Here, we have performed first principlecalculations with FP-L<missing VAR>APW method for the orthorhombic rubidium lead halidestructures (chRbPbX<missing VAR>3, where chX<missing VAR>I,Br,Cl) to study the optoelectronic andtransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3, ',', 0]

I
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355824, 355824)
 Here, we have performed first principlecalculations with FP-L<missing VAR>APW method for the orthorhombic rubidium lead halidestructures (chRbPbX<missing VAR>3, where chX<missing VAR>I,Br,Cl) to study the optoelectronic andtransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, ',', 0]

Br
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355826, 355826)
 Here, we have performed first principlecalculations with FP-L<missing VAR>APW method for the orthorhombic rubidium lead halidestructures (chRbPbX<missing VAR>3, where chX<missing VAR>I,Br,Cl) to study the optoelectronic andtransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 3, ',', 0]

Cl
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355828, 355828)
 Here, we have performed first principlecalculations with FP-L<missing VAR>APW method for the orthorhombic rubidium lead halidestructures (chRbPbX<missing VAR>3, where chX<missing VAR>I,Br,Cl) to study the optoelectronic andtransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 3, ',', 0]

RbPbBr3
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355875, 355878)
 The effective mass of electron (hole) is found to beminimum for chRbPbBr3 (chRbPbI3), suggesting an efficient transport ofelectrons (holes) in the corresponding materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 3, ',', 1]

I3
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355884, 355885)
 The effective mass of electron (hole) is found to beminimum for chRbPbBr3 (chRbPbI3), suggesting an efficient transport ofelectrons (holes) in the corresponding materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 3, ',', 1]

RbPbBr3
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(355996, 355999)
 To the bestof our knowledge, ab-initio study of electronic and optical properties ofchRbPbBr3  chRbPbCl3 in orthorhombic phase (chNH4CdCl3 typestructure) is reported for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 3, ',', 3]

RbPbCl3
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(356003, 356006)
 To the bestof our knowledge, ab-initio study of electronic and optical properties ofchRbPbBr3  chRbPbCl3 in orthorhombic phase (chNH4CdCl3 typestructure) is reported for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3, ',', 3]

NH4CdCl3
###First principle studies on the optoelectronic properties of rubidium lead halides|Anupriya Nyayban,Subhasis Panda,Avijit Chowdhury,B. Indrajit Sharma###
(356016, 356021)
 To the bestof our knowledge, ab-initio study of electronic and optical properties ofchRbPbBr3  chRbPbCl3 in orthorhombic phase (chNH4CdCl3 typestructure) is reported for the first time.
Featurization terminated normally.
0.4444444444444444,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 3, ',', 3]

(PSC)
###Deducing the key physical properties of a perovskite solar cell from its impedance response: insights from drift-diffusion modelling|Antonio Riquelme,Laurence J. Bennett,Nicola E. Courtier,Matthew J. Wolf,Lidia Contreras-Bernal,Alison Walker,Giles Richardson,Juan A. Anta###
(356105, 356109)
 Interpreting the impedance response of perovskite solar cells (PSC) issignificantly more challenging than for most other photovoltaics.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSCs
###Deducing the key physical properties of a perovskite solar cell from its impedance response: insights from drift-diffusion modelling|Antonio Riquelme,Laurence J. Bennett,Nicola E. Courtier,Matthew J. Wolf,Lidia Contreras-Bernal,Alison Walker,Giles Richardson,Juan A. Anta###
(356218, 356220)
 Experimentalstudies, conducted on a variety of PSCs, produce a variety of impedance spectrashapes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Deducing the key physical properties of a perovskite solar cell from its impedance response: insights from drift-diffusion modelling|Antonio Riquelme,Laurence J. Bennett,Nicola E. Courtier,Matthew J. Wolf,Lidia Contreras-Bernal,Alison Walker,Giles Richardson,Juan A. Anta###
(356389, 356389)
 In addition, weshow that the high frequency response contains all the key information relatingto the steady-state performance of a PSC, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSC
###Deducing the key physical properties of a perovskite solar cell from its impedance response: insights from drift-diffusion modelling|Antonio Riquelme,Laurence J. Bennett,Nicola E. Courtier,Matthew J. Wolf,Lidia Contreras-Bernal,Alison Walker,Giles Richardson,Juan A. Anta###
(356436, 356438)
 In addition, weshow that the high frequency response contains all the key information relatingto the steady-state performance of a PSC, i.e.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoSP
###Theoretical Study of Ternary CoSP Semiconductor: a Candidate for Photovoltaic Applications|Abdesalem Houari,Fares Benissad###
(356604, 356606)
Theoretical Study of Ternary CoSP Semiconductor a Candidate for Photovoltaic Applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 1.14, 'eV', 4]

(CoSP)
###Theoretical Study of Ternary CoSP Semiconductor: a Candidate for Photovoltaic Applications|Abdesalem Houari,Fares Benissad###
(356637, 356641)
 The electronic structure of pyrite-type cobalt phosphosulfide (CoSP) has beenstudied using density-functional theory.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1.14, 'eV', 3]

Co
###Theoretical Study of Ternary CoSP Semiconductor: a Candidate for Photovoltaic Applications|Abdesalem Houari,Fares Benissad###
(356785, 356785)
 It separates the upper part of thevalence band dominated by Co-3d-t2g<missing VAR> states from the lower part of theconduction band made exclusively of Co-3d<missing VAR>-eg , above of which lie S-3p<missing VAR> and P-3p<missing VAR>ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1.14, 'eV', 1]

Co
###Theoretical Study of Ternary CoSP Semiconductor: a Candidate for Photovoltaic Applications|Abdesalem Houari,Fares Benissad###
(356819, 356819)
 It separates the upper part of thevalence band dominated by Co-3d-t2g<missing VAR> states from the lower part of theconduction band made exclusively of Co-3d<missing VAR>-eg , above of which lie S-3p<missing VAR> and P-3p<missing VAR>ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1.14, 'eV', 1]

S
###Theoretical Study of Ternary CoSP Semiconductor: a Candidate for Photovoltaic Applications|Abdesalem Houari,Fares Benissad###
(356836, 356836)
 It separates the upper part of thevalence band dominated by Co-3d-t2g<missing VAR> states from the lower part of theconduction band made exclusively of Co-3d<missing VAR>-eg , above of which lie S-3p<missing VAR> and P-3p<missing VAR>ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 1.14, 'eV', 1]

P
###Theoretical Study of Ternary CoSP Semiconductor: a Candidate for Photovoltaic Applications|Abdesalem Houari,Fares Benissad###
(356843, 356843)
 It separates the upper part of thevalence band dominated by Co-3d-t2g<missing VAR> states from the lower part of theconduction band made exclusively of Co-3d<missing VAR>-eg , above of which lie S-3p<missing VAR> and P-3p<missing VAR>ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1.14, 'eV', 1]

CoSP
###Theoretical Study of Ternary CoSP Semiconductor: a Candidate for Photovoltaic Applications|Abdesalem Houari,Fares Benissad###
(356908, 356910)
 The origin of the larger CoSP band gap, with respect to the one ofthe promising FeS2 compound, is explained and the chemical bonding propertiesare addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 1.14, 'eV', 3]

FeS2
###Theoretical Study of Ternary CoSP Semiconductor: a Candidate for Photovoltaic Applications|Abdesalem Houari,Fares Benissad###
(356934, 356936)
 The origin of the larger CoSP band gap, with respect to the one ofthe promising FeS2 compound, is explained and the chemical bonding propertiesare addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 1.14, 'eV', 3]

CoSP
###Theoretical Study of Ternary CoSP Semiconductor: a Candidate for Photovoltaic Applications|Abdesalem Houari,Fares Benissad###
(356989, 356991)
 A comparative picture is established where several similaritieshave been found, suggesting that CoSP could be for a great practical interestin photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 1.14, 'eV', 4]

(ISS)
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357098, 357102)
 The conventionalinclined solar still (ISS) suffers from low efficiency and low productivity.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 4.3, 'kg', 4],[295.0, 7, 'kg', 7],[298.0, 2, ',', 7]

(FSS)
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357143, 357147)
 Toimprove the performance of solar still, a flat solar still (FSS) is proposed,which has a working principle similar to the solar cell.
Featurization successful!
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 4.3, 'kg', 3],[250.0, 7, 'kg', 6],[253.0, 2, ',', 6]

FSS
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357185, 357187)
 The condensate waterin FSS is collected by the capillary grid attached under the ultra-hydrophilicglass cover, instead of by gravity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 4.3, 'kg', 2],[210.0, 7, 'kg', 5],[213.0, 2, ',', 5]

FSS
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357229, 357231)
 Therefore, FSS avoids the inclinedstructure and is much more compact than ISS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4.3, 'kg', 1],[166.0, 7, 'kg', 4],[169.0, 2, ',', 4]

ISS
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357254, 357256)
 Therefore, FSS avoids the inclinedstructure and is much more compact than ISS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4.3, 'kg', 1],[141.0, 7, 'kg', 4],[144.0, 2, ',', 4]

FSS
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357267, 357269)
 The daily productivity of FSSreaches up to 4.3 kg/m<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4.3, 'kg', 0],[128.0, 7, 'kg', 3],[131.0, 2, ',', 3]

FSS
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357302, 357304)
 Theoretical analysis shows that the enhanced masstransfer in FSS by the compact structure is an important factor for highperformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 4.3, 'kg', 1],[93.0, 7, 'kg', 2],[96.0, 2, ',', 2]

FSS
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357335, 357337)
 More interestingly, FSS can also be easily extended to more stagefor latent heat recovery.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4.3, 'kg', 2],[60.0, 7, 'kg', 1],[63.0, 2, ',', 1]

FSS
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357388, 357390)
 The results show that the daily productivity of adouble-stage FSS reaches up to 7 kg/m<missing VAR>2, which is much higher than theconventional solar still.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 4.3, 'kg', 3],[7.0, 7, 'kg', 0],[10.0, 2, ',', 0]

FSS
###A compact flat solar still with high performance|Guilong Peng,Swellam W. Sharshir,Rencai Ji,Zhixiang Hu,Jianqiang Ma,A. E. Kabeel,Huan Liu,Jianfeng Zang,Nuo Yang###
(357423, 357425)
 FSS paves a new way in designing and optimizing ofsolar still.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 4.3, 'kg', 4],[26.0, 7, 'kg', 1],[23.0, 2, ',', 1]

In
###Gryffin: An algorithm for Bayesian optimization of categorical variables informed by expert knowledge|Florian Häse,Matteo Aldeghi,Riley J. Hickman,Loïc M. Roch,Alán Aspuru-Guzik###
(357774, 357774)
 Inaddition to comprehensive benchmarks, we demonstrate the capabilities andperformance of Gryffin on three examples in materials science and chemistry(i) the discovery of non-fullerene acceptors for organic solar cells, (ii) thedesign of hybrid organic-inorganic perovskites for light harvesting, and (iii)the identification of ligands and process parameters for Suzuki-Miyaurareactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PCEs)
###Impact of Grain Boundaries on Efficiency and Stability of Organic-Inorganic Trihalide Perovskites|Zhaodong Chu,Mengjin Yang,Philip Schulz,Di Wu,Xin Ma,Edward Seifert,Liuyang Sun,Kai Zhu,Xiaoqin Li,Keji Lai###
(358064, 358068)
 Organic-inorganic perovskite solar cells have attracted tremendous attentionbecause of their remarkably high power conversion efficiencies (PCEs).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
Abstract does not contain any numbers.

I3
###Impact of Grain Boundaries on Efficiency and Stability of Organic-Inorganic Trihalide Perovskites|Zhaodong Chu,Mengjin Yang,Philip Schulz,Di Wu,Xin Ma,Edward Seifert,Liuyang Sun,Kai Zhu,Xiaoqin Li,Keji Lai###
(358165, 358166)
 Here, we report the first quantitative nanoscalephotoconductivity imaging on two methylammonium lead triiodide (M<missing VAR>APbI3) thinfilms with different PCEs by light-stimulated microwave impedance microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCEs
###Impact of Grain Boundaries on Efficiency and Stability of Organic-Inorganic Trihalide Perovskites|Zhaodong Chu,Mengjin Yang,Philip Schulz,Di Wu,Xin Ma,Edward Seifert,Liuyang Sun,Kai Zhu,Xiaoqin Li,Keji Lai###
(358178, 358180)
 Here, we report the first quantitative nanoscalephotoconductivity imaging on two methylammonium lead triiodide (M<missing VAR>APbI3) thinfilms with different PCEs by light-stimulated microwave impedance microscopy.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
Abstract does not contain any numbers.

In
###Impact of Grain Boundaries on Efficiency and Stability of Organic-Inorganic Trihalide Perovskites|Zhaodong Chu,Mengjin Yang,Philip Schulz,Di Wu,Xin Ma,Edward Seifert,Liuyang Sun,Kai Zhu,Xiaoqin Li,Keji Lai###
(358256, 358256)
 In contrast, the carrier mobilityand lifetime are strongly affected by bulk properties such as the samplecrystallinity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Impact of Grain Boundaries on Efficiency and Stability of Organic-Inorganic Trihalide Perovskites|Zhaodong Chu,Mengjin Yang,Philip Schulz,Di Wu,Xin Ma,Edward Seifert,Liuyang Sun,Kai Zhu,Xiaoqin Li,Keji Lai###
(358296, 358296)
 As visualized by the spatial evolution of localphotoconductivity, the degradation due to water diffusion through the cappinglayer begins with the disintegration of large grains rather than the nucleationand propagation from grain boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Impact of Grain Boundaries on Efficiency and Stability of Organic-Inorganic Trihalide Perovskites|Zhaodong Chu,Mengjin Yang,Philip Schulz,Di Wu,Xin Ma,Edward Seifert,Liuyang Sun,Kai Zhu,Xiaoqin Li,Keji Lai###
(358398, 358400)
 Our findings provide new insights toimprove the electro-optical properties of M<missing VAR>APbI3 thin films towards large-scalecommercialization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BC
###Accurate, rapid identification of dislocation lines in coherent diffractive imaging via a min-max optimization formulation|A. Ulvestad,M. Menickelly,S. M. Wild###
(358642, 358643)
 However, the advent of Bragg coherent x<missing VAR>-ray diffractive imaging(BCD<missing VAR>I) has made possible the 3D imaging of multiple dislocations innanoparticles ranging in size from 100 nm to1000 nm.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'D', 0],[34.0, 100, 'nm', 0],[174.0, 3, 'D', 3],[238.0, 260, 'x', 5]

I
###Accurate, rapid identification of dislocation lines in coherent diffractive imaging via a min-max optimization formulation|A. Ulvestad,M. Menickelly,S. M. Wild###
(358645, 358645)
 However, the advent of Bragg coherent x<missing VAR>-ray diffractive imaging(BCD<missing VAR>I) has made possible the 3D imaging of multiple dislocations innanoparticles ranging in size from 100 nm to1000 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3, 'D', 0],[32.0, 100, 'nm', 0],[172.0, 3, 'D', 3],[236.0, 260, 'x', 5]

BC
###Accurate, rapid identification of dislocation lines in coherent diffractive imaging via a min-max optimization formulation|A. Ulvestad,M. Menickelly,S. M. Wild###
(358833, 358834)
 Here wedemonstrate a derivative-free method that is both more accurate and morecomputationally efficient than either derivative- or human-based methods foridentifying 3D dislocation lines in nanocrystal images produced by BCD<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 3, 'D', 3],[156.0, 100, 'nm', 3],[16.0, 3, 'D', 0],[47.0, 260, 'x', 2]

I
###Accurate, rapid identification of dislocation lines in coherent diffractive imaging via a min-max optimization formulation|A. Ulvestad,M. Menickelly,S. M. Wild###
(358836, 358836)
 Here wedemonstrate a derivative-free method that is both more accurate and morecomputationally efficient than either derivative- or human-based methods foridentifying 3D dislocation lines in nanocrystal images produced by BCD<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 3, 'D', 3],[159.0, 100, 'nm', 3],[19.0, 3, 'D', 0],[45.0, 260, 'x', 2]

B
###Accurate, rapid identification of dislocation lines in coherent diffractive imaging via a min-max optimization formulation|A. Ulvestad,M. Menickelly,S. M. Wild###
(358959, 358959)
 We also provide the MATLAB code for use by other researchers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 3, 'D', 7],[282.0, 100, 'nm', 7],[142.0, 3, 'D', 4],[78.0, 260, 'x', 2]

P
###Impact of Unintentional Oxygen Doping on Organic Photodetectors|Julie Euvrard,Amelie Revaux,Alexandra Cantarano,Stephanie Jacob,Antoine Kahn,Dominique Vuillaume###
(359072, 359072)
 This treatment is particularly interesting to enable thedeposition from solution ofpoly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT<missing VAR>PSS) on top ofthe active layer of organic solar cells or photodetectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, ',', 0],[251.0, 350, 'meV', 5]

O
###Impact of Unintentional Oxygen Doping on Organic Photodetectors|Julie Euvrard,Amelie Revaux,Alexandra Cantarano,Stephanie Jacob,Antoine Kahn,Dominique Vuillaume###
(359075, 359075)
 This treatment is particularly interesting to enable thedeposition from solution ofpoly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT<missing VAR>PSS) on top ofthe active layer of organic solar cells or photodetectors.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 3, ',', 0],[248.0, 350, 'meV', 5]

S
###Impact of Unintentional Oxygen Doping on Organic Photodetectors|Julie Euvrard,Amelie Revaux,Alexandra Cantarano,Stephanie Jacob,Antoine Kahn,Dominique Vuillaume###
(359079, 359079)
 This treatment is particularly interesting to enable thedeposition from solution ofpoly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT<missing VAR>PSS) on top ofthe active layer of organic solar cells or photodetectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, ',', 0],[244.0, 350, 'meV', 5]

In
###Impact of Unintentional Oxygen Doping on Organic Photodetectors|Julie Euvrard,Amelie Revaux,Alexandra Cantarano,Stephanie Jacob,Antoine Kahn,Dominique Vuillaume###
(359157, 359157)
 In this study, we aim to determine theimpact of oxygen plasma surface treatment on the performance of organicphotodetectors (OPD).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3, ',', 2],[166.0, 350, 'meV', 3]

OP
###Impact of Unintentional Oxygen Doping on Organic Photodetectors|Julie Euvrard,Amelie Revaux,Alexandra Cantarano,Stephanie Jacob,Antoine Kahn,Dominique Vuillaume###
(359201, 359202)
 In this study, we aim to determine theimpact of oxygen plasma surface treatment on the performance of organicphotodetectors (OPD).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 3, ',', 2],[121.0, 350, 'meV', 3]

OPDs
###Impact of Unintentional Oxygen Doping on Organic Photodetectors|Julie Euvrard,Amelie Revaux,Alexandra Cantarano,Stephanie Jacob,Antoine Kahn,Dominique Vuillaume###
(359397, 359399)
 Numericalsimulations are carried out to understand the impact of p<missing VAR>-doping and traps onthe electrical characteristics and performance of the OPDs.
EXCEPTION 3: IndexError for OPDs
[338.0, 3, ',', 6],[74.0, 350, 'meV', 1]

Sn
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359420, 359420)
Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance A 119Sn Mossbauer Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 119, 'Sn', 0],[65.0, 3000, 'C', 1],[81.0, 5500, 'C', 1],[277.0, 0.145, '%', 5],[282.0, 1, '%', 5],[325.0, 4.23, 'compared', 6],[329.0, 2.17, 'in', 6]

Cu2ZnSnS4
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359426, 359431)
Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance A 119Sn Mossbauer Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 119, 'Sn', 0],[54.0, 3000, 'C', 1],[70.0, 5500, 'C', 1],[266.0, 0.145, '%', 5],[271.0, 1, '%', 5],[314.0, 4.23, 'compared', 6],[318.0, 2.17, 'in', 6]

C
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359463, 359463)
 Mossbauer analysis is carried out on CZTS samples, subjected to a lowtemperature processing at 3000C (S1) and high temperature processing at 5500Cunder sulfur environment (S2).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 119, 'Sn', 1],[22.0, 3000, 'C', 0],[38.0, 5500, 'C', 0],[234.0, 0.145, '%', 4],[239.0, 1, '%', 4],[282.0, 4.23, 'compared', 5],[286.0, 2.17, 'in', 5]

S
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359466, 359466)
 Mossbauer analysis is carried out on CZTS samples, subjected to a lowtemperature processing at 3000C (S1) and high temperature processing at 5500Cunder sulfur environment (S2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 119, 'Sn', 1],[19.0, 3000, 'C', 0],[35.0, 5500, 'C', 0],[231.0, 0.145, '%', 4],[236.0, 1, '%', 4],[279.0, 4.23, 'compared', 5],[283.0, 2.17, 'in', 5]

(S1)
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359487, 359490)
 Mossbauer analysis is carried out on CZTS samples, subjected to a lowtemperature processing at 3000C (S1) and high temperature processing at 5500Cunder sulfur environment (S2).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 119, 'Sn', 1],[2.0, 3000, 'C', 0],[11.0, 5500, 'C', 0],[207.0, 0.145, '%', 4],[212.0, 1, '%', 4],[255.0, 4.23, 'compared', 5],[259.0, 2.17, 'in', 5]

(S2)
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359510, 359513)
 Mossbauer analysis is carried out on CZTS samples, subjected to a lowtemperature processing at 3000C (S1) and high temperature processing at 5500Cunder sulfur environment (S2).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 119, 'Sn', 1],[25.0, 3000, 'C', 0],[9.0, 5500, 'C', 0],[184.0, 0.145, '%', 4],[189.0, 1, '%', 4],[232.0, 4.23, 'compared', 5],[236.0, 2.17, 'in', 5]

Sn
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359520, 359520)
 Loss of Sn is observed in sample S2 due to hightemperature thermal treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 119, 'Sn', 2],[35.0, 3000, 'C', 1],[19.0, 5500, 'C', 1],[177.0, 0.145, '%', 3],[182.0, 1, '%', 3],[225.0, 4.23, 'compared', 4],[229.0, 2.17, 'in', 4]

S2
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359530, 359531)
 Loss of Sn is observed in sample S2 due to hightemperature thermal treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 119, 'Sn', 2],[45.0, 3000, 'C', 1],[29.0, 5500, 'C', 1],[166.0, 0.145, '%', 3],[171.0, 1, '%', 3],[214.0, 4.23, 'compared', 4],[218.0, 2.17, 'in', 4]

Sn
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359571, 359571)
The isomer shifts obtained in the Mossbauerspectra confirms the existence of Sn at its 4+ valance state in both thesamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 119, 'Sn', 3],[86.0, 3000, 'C', 2],[70.0, 5500, 'C', 2],[126.0, 0.145, '%', 2],[131.0, 1, '%', 2],[174.0, 4.23, 'compared', 3],[178.0, 2.17, 'in', 3]

S1
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359608, 359609)
 Relatively high quadriple splitting is observed in S1 with respect toS2, suggesting dislocations and crystal distortion present in S1, which arereduced drastically by high temperature annealed S2 sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 119, 'Sn', 4],[123.0, 3000, 'C', 3],[107.0, 5500, 'C', 3],[88.0, 0.145, '%', 1],[93.0, 1, '%', 1],[136.0, 4.23, 'compared', 2],[140.0, 2.17, 'in', 2]

S2
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359618, 359619)
 Relatively high quadriple splitting is observed in S1 with respect toS2, suggesting dislocations and crystal distortion present in S1, which arereduced drastically by high temperature annealed S2 sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 119, 'Sn', 4],[133.0, 3000, 'C', 3],[117.0, 5500, 'C', 3],[78.0, 0.145, '%', 1],[83.0, 1, '%', 1],[126.0, 4.23, 'compared', 2],[130.0, 2.17, 'in', 2]

S1
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359636, 359637)
 Relatively high quadriple splitting is observed in S1 with respect toS2, suggesting dislocations and crystal distortion present in S1, which arereduced drastically by high temperature annealed S2 sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 119, 'Sn', 4],[151.0, 3000, 'C', 3],[135.0, 5500, 'C', 3],[60.0, 0.145, '%', 1],[65.0, 1, '%', 1],[108.0, 4.23, 'compared', 2],[112.0, 2.17, 'in', 2]

S2
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359657, 359658)
 Relatively high quadriple splitting is observed in S1 with respect toS2, suggesting dislocations and crystal distortion present in S1, which arereduced drastically by high temperature annealed S2 sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 119, 'Sn', 4],[172.0, 3000, 'C', 3],[156.0, 5500, 'C', 3],[39.0, 0.145, '%', 1],[44.0, 1, '%', 1],[87.0, 4.23, 'compared', 2],[91.0, 2.17, 'in', 2]

S1
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359674, 359675)
 The fabricatedsolar cell with S1 and S2 absorbers showed significant improvement inefficiency from 0.145% to 1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 119, 'Sn', 5],[189.0, 3000, 'C', 4],[173.0, 5500, 'C', 4],[22.0, 0.145, '%', 0],[27.0, 1, '%', 0],[70.0, 4.23, 'compared', 1],[74.0, 2.17, 'in', 1]

S2
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359679, 359680)
 The fabricatedsolar cell with S1 and S2 absorbers showed significant improvement inefficiency from 0.145% to 1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 119, 'Sn', 5],[194.0, 3000, 'C', 4],[178.0, 5500, 'C', 4],[17.0, 0.145, '%', 0],[22.0, 1, '%', 0],[65.0, 4.23, 'compared', 1],[69.0, 2.17, 'in', 1]

Sn
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359714, 359714)
 The presence of excess Sn in S1 allows enhancedrecombination and the diode ideality factor shows larger value of 4.23 comparedto 2.17 in case of S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 119, 'Sn', 6],[229.0, 3000, 'C', 5],[213.0, 5500, 'C', 5],[17.0, 0.145, '%', 1],[12.0, 1, '%', 1],[31.0, 4.23, 'compared', 0],[35.0, 2.17, 'in', 0]

S1
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359718, 359719)
 The presence of excess Sn in S1 allows enhancedrecombination and the diode ideality factor shows larger value of 4.23 comparedto 2.17 in case of S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 119, 'Sn', 6],[233.0, 3000, 'C', 5],[217.0, 5500, 'C', 5],[21.0, 0.145, '%', 1],[16.0, 1, '%', 1],[26.0, 4.23, 'compared', 0],[30.0, 2.17, 'in', 0]

S2
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359755, 359756)
 The presence of excess Sn in S1 allows enhancedrecombination and the diode ideality factor shows larger value of 4.23 comparedto 2.17 in case of S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 119, 'Sn', 6],[270.0, 3000, 'C', 5],[254.0, 5500, 'C', 5],[58.0, 0.145, '%', 1],[53.0, 1, '%', 1],[10.0, 4.23, 'compared', 0],[6.0, 2.17, 'in', 0]

S1
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359773, 359774)
 The experiments also validate the fact that S1 with Snrich configuration shows lower acceptor carrier concentration as compared to S2because of enhanced compensating defects in S1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 119, 'Sn', 7],[288.0, 3000, 'C', 6],[272.0, 5500, 'C', 6],[76.0, 0.145, '%', 2],[71.0, 1, '%', 2],[28.0, 4.23, 'compared', 1],[24.0, 2.17, 'in', 1]

Sn
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359778, 359778)
 The experiments also validate the fact that S1 with Snrich configuration shows lower acceptor carrier concentration as compared to S2because of enhanced compensating defects in S1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 119, 'Sn', 7],[293.0, 3000, 'C', 6],[277.0, 5500, 'C', 6],[81.0, 0.145, '%', 2],[76.0, 1, '%', 2],[33.0, 4.23, 'compared', 1],[29.0, 2.17, 'in', 1]

S2
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359801, 359802)
 The experiments also validate the fact that S1 with Snrich configuration shows lower acceptor carrier concentration as compared to S2because of enhanced compensating defects in S1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 119, 'Sn', 7],[316.0, 3000, 'C', 6],[300.0, 5500, 'C', 6],[104.0, 0.145, '%', 2],[99.0, 1, '%', 2],[56.0, 4.23, 'compared', 1],[52.0, 2.17, 'in', 1]

S1
###Impact of excess and disordered Sn sites on Cu2ZnSnS4 absorber material and device performance: A 119Sn Mossbauer Study|Goutam Kumar Gupta,V R Reddy,Ambesh Dixit###
(359817, 359818)
 The experiments also validate the fact that S1 with Snrich configuration shows lower acceptor carrier concentration as compared to S2because of enhanced compensating defects in S1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 119, 'Sn', 7],[332.0, 3000, 'C', 6],[316.0, 5500, 'C', 6],[120.0, 0.145, '%', 2],[115.0, 1, '%', 2],[72.0, 4.23, 'compared', 1],[68.0, 2.17, 'in', 1]

In
###Room Temperature Quantum Coherence vs. Electron Transfer in a Rhodanine Derivative Chromophore|Duvalier Madrid-Úsuga,Cristian E. Susa,John H. Reina###
(359969, 359969)
 In thiswork, we investigate subpicosecond time scale quantum dynamics and electrontransfer in an efficient electron acceptor Rhodanine chromophoric complex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360254, 360255)
Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360278, 360279)
 Structural defects in the p<missing VAR>-ZnTe/i<missing VAR>-CdTe/n<missing VAR>-CdTe single-crystallineheterojunctions designed for photovoltaic applications have been investigatedby transmission electron microscopy (TEM) and deep-level transient spectroscopy(DLTS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360283, 360284)
 Structural defects in the p<missing VAR>-ZnTe/i<missing VAR>-CdTe/n<missing VAR>-CdTe single-crystallineheterojunctions designed for photovoltaic applications have been investigatedby transmission electron microscopy (TEM) and deep-level transient spectroscopy(DLTS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360288, 360289)
 Structural defects in the p<missing VAR>-ZnTe/i<missing VAR>-CdTe/n<missing VAR>-CdTe single-crystallineheterojunctions designed for photovoltaic applications have been investigatedby transmission electron microscopy (TEM) and deep-level transient spectroscopy(DLTS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360342, 360342)
 Structural defects in the p<missing VAR>-ZnTe/i<missing VAR>-CdTe/n<missing VAR>-CdTe single-crystallineheterojunctions designed for photovoltaic applications have been investigatedby transmission electron microscopy (TEM) and deep-level transient spectroscopy(DLTS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360362, 360363)
 Lattice parameters and misfit strain in the undoped CdTe absorberlayers of the heterojunctions, grown by the molecular-beam epitaxy technique ontwo different substrates, GaAs and CdTe, have been determined withhigh-resolution X<missing VAR>-ray diffractometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360401, 360402)
 Lattice parameters and misfit strain in the undoped CdTe absorberlayers of the heterojunctions, grown by the molecular-beam epitaxy technique ontwo different substrates, GaAs and CdTe, have been determined withhigh-resolution X<missing VAR>-ray diffractometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360406, 360407)
 Lattice parameters and misfit strain in the undoped CdTe absorberlayers of the heterojunctions, grown by the molecular-beam epitaxy technique ontwo different substrates, GaAs and CdTe, have been determined withhigh-resolution X<missing VAR>-ray diffractometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe/GaAs
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360451, 360455)
 A dense network of misfit dislocations atthe lattice-mismatched CdTe/GaAs and ZnTe/CdTe interfaces and numerousthreading dislocations and stacking faults have been shown by thecross-sectional TEM imaging of the heterojunctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ZnTe/CdTe
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360459, 360463)
 A dense network of misfit dislocations atthe lattice-mismatched CdTe/GaAs and ZnTe/CdTe interfaces and numerousthreading dislocations and stacking faults have been shown by thecross-sectional TEM imaging of the heterojunctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360515, 360515)
 The DLTS measurementsrevealed five deep-level traps in the heterojunctions grown on the GaAssubstrates and only three of them in the heterojunctions grown on CdTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360542, 360543)
 The DLTS measurementsrevealed five deep-level traps in the heterojunctions grown on the GaAssubstrates and only three of them in the heterojunctions grown on CdTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360568, 360569)
 The DLTS measurementsrevealed five deep-level traps in the heterojunctions grown on the GaAssubstrates and only three of them in the heterojunctions grown on CdTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360622, 360622)
 One ofthe traps, showing the exponential capture kinetics of charge carriers, hasbeen identified as associated with the double acceptor level of Cd vacancies inthe CdTe absorber layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications|Karolina Wichrowska,Tadeusz Wosinski,Jaroslaw Z. Domagala,Slawomir Kret,Sergij Chusnutdinow,Grzegorz Karczewski###
(360631, 360632)
 One ofthe traps, showing the exponential capture kinetics of charge carriers, hasbeen identified as associated with the double acceptor level of Cd vacancies inthe CdTe absorber layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3PbI3
###Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy|Samuel A. March,Charlotte Clegg,Drew B. Riley,Daniel Webber,Ian G. Hill,Kimberley C. Hall###
(360849, 360857)
Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 13, 'meV', 5],[341.0, 16, 'meV', 5]

CH3NH3PbI3
###Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy|Samuel A. March,Charlotte Clegg,Drew B. Riley,Daniel Webber,Ian G. Hill,Kimberley C. Hall###
(361043, 361051)
 Here we report the simultaneous observation offree and defect-bound excitons in CH3NH3PbI3 films using four-wave mixing (FWM)spectroscopy.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 13, 'meV', 2],[147.0, 16, 'meV', 2]

FW
###Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy|Samuel A. March,Charlotte Clegg,Drew B. Riley,Daniel Webber,Ian G. Hill,Kimberley C. Hall###
(361064, 361065)
 Here we report the simultaneous observation offree and defect-bound excitons in CH3NH3PbI3 films using four-wave mixing (FWM)spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 13, 'meV', 2],[133.0, 16, 'meV', 2]

FW
###Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy|Samuel A. March,Charlotte Clegg,Drew B. Riley,Daniel Webber,Ian G. Hill,Kimberley C. Hall###
(361085, 361086)
 Due to the high sensitivity of FWM<missing VAR> to excitons, tied to theirlonger coherence decay times than unbound electron-hole pairs, we show that theexciton resonance energies can be directly observed from the nonlinear opticalspectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 13, 'meV', 1],[112.0, 16, 'meV', 1]

V
###Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy|Samuel A. March,Charlotte Clegg,Drew B. Riley,Daniel Webber,Ian G. Hill,Kimberley C. Hall###
(361177, 361177)
 Our results indicate low-temperature binding energies of 13 meV (29meV) for the free (defect-bound) exciton, with the 16 meV localization energyfor excitons attributed to binding to point defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 13, 'meV', 0],[21.0, 16, 'meV', 0]

V
###Simultaneous observation of free and defect-bound excitons in CH3NH3PbI3 using four-wave mixing spectroscopy|Samuel A. March,Charlotte Clegg,Drew B. Riley,Daniel Webber,Ian G. Hill,Kimberley C. Hall###
(361251, 361251)
 Our findings shed light onthe wide range of binding energies (2-55 meV) reported in recent years.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 13, 'meV', 1],[53.0, 16, 'meV', 1]

III
###Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor|J. N. Heyman,A. M. Schwartzberg,K. M. Yu,A. V. Luce,O. D. Dubon,Y. J. Kuang,C. W. Tu,W. Walukiewicz###
(361279, 361281)
Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 23, 'ps', 3]

V
###Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor|J. N. Heyman,A. M. Schwartzberg,K. M. Yu,A. V. Luce,O. D. Dubon,Y. J. Kuang,C. W. Tu,W. Walukiewicz###
(361283, 361283)
Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 23, 'ps', 3]

N
###Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor|J. N. Heyman,A. M. Schwartzberg,K. M. Yu,A. V. Luce,O. D. Dubon,Y. J. Kuang,C. W. Tu,W. Walukiewicz###
(361285, 361285)
Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 23, 'ps', 3]

GaPAsN
###Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor|J. N. Heyman,A. M. Schwartzberg,K. M. Yu,A. V. Luce,O. D. Dubon,Y. J. Kuang,C. W. Tu,W. Walukiewicz###
(361325, 361328)
 We have used transient absorption spectroscopy to measure carrier lifetimesin the multiband band semiconductor GaPAsN.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 23, 'ps', 2]

GaP0.32As0.67N0.01
###Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor|J. N. Heyman,A. M. Schwartzberg,K. M. Yu,A. V. Luce,O. D. Dubon,Y. J. Kuang,C. W. Tu,W. Walukiewicz###
(361390, 361396)
 Following photoexcitation ofGaP0.32As0.67N0.01 we find that the electron population in the conduction banddecays exponentially with a time constant 23ps.
Featurization terminated normally.
0,0,0,0,0,0,0.005,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.335,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 23, 'ps', 0]

In
###Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor|J. N. Heyman,A. M. Schwartzberg,K. M. Yu,A. V. Luce,O. D. Dubon,Y. J. Kuang,C. W. Tu,W. Walukiewicz###
(361477, 361477)
 In our experiment an optical pump pulse excitedelectrons from the valance band to the intermediate and conduction bands, andthe change in interband absorption due to absorption saturation and inducedabsorption was probed with a delayed white light pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 23, 'ps', 2]

GaPAsN
###Carrier Lifetimes in a III-V-N Intermediate Band Semiconductor|J. N. Heyman,A. M. Schwartzberg,K. M. Yu,A. V. Luce,O. D. Dubon,Y. J. Kuang,C. W. Tu,W. Walukiewicz###
(361672, 361675)
 These results indicate that the minoritycarrier lifetimes are too short for efficient solar power conversion and thatimprovements in material quality will be required for practical applications ofGaPAsN based intermediate band solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 23, 'ps', 4]

II
###Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers|Marco Piccardo,Chi-Kang Li,Yuh-Renn Wu,James S. Speck,Bastien Bonef,Robert M. Farrell,Marcel Filoche,Lucio Martinelli,Jacques Peretti,Claude Weisbuch###
(361710, 361711)
Localization landscape theory of disorder in semiconductors II Urbach tails of disordered quantum well layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0, 'to', 3],[148.0, 28, '%', 3],[172.0, 3, 'D', 4]

InGaN
###Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers|Marco Piccardo,Chi-Kang Li,Yuh-Renn Wu,James S. Speck,Bastien Bonef,Robert M. Farrell,Marcel Filoche,Lucio Martinelli,Jacques Peretti,Claude Weisbuch###
(361764, 361766)
 The Urbach tail observed in InGaN alloy quantum wellsof solar cells and LEDs by biased photocurrent spectroscopy is shown to becharacteristic of the ternary alloy disorder.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0, 'to', 1],[93.0, 28, '%', 1],[117.0, 3, 'D', 2]

Ds
###Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers|Marco Piccardo,Chi-Kang Li,Yuh-Renn Wu,James S. Speck,Bastien Bonef,Robert M. Farrell,Marcel Filoche,Lucio Martinelli,Jacques Peretti,Claude Weisbuch###
(361785, 361785)
 The Urbach tail observed in InGaN alloy quantum wellsof solar cells and LEDs by biased photocurrent spectroscopy is shown to becharacteristic of the ternary alloy disorder.
EXCEPTION 3: IndexError for Ds
V
[72.0, 0, 'to', 1],[74.0, 28, '%', 1],[98.0, 3, 'D', 2]

CuO
###Optical properties of spin coated and sol-gel dip coated cupric oxide thin films|P. Samarasekara,N. G. K. V. M. Premasiri###
(362302, 362303)
 Spin coating technique was employed to fabricate CuO films at different spinspeeds for different time duration, and they were annealed at differenttemperatures for different time durations in air.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 1.869, 'eV', 6],[275.0, 1.172, 'mA', 8]

UV
###Optical properties of spin coated and sol-gel dip coated cupric oxide thin films|P. Samarasekara,N. G. K. V. M. Premasiri###
(362366, 362367)
 These thin films werecharacterized using UV Visible spectrometer and solar cell simulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[167.0, 1.869, 'eV', 5],[211.0, 1.172, 'mA', 7]

As
###Optical properties of spin coated and sol-gel dip coated cupric oxide thin films|P. Samarasekara,N. G. K. V. M. Premasiri###
(362382, 362382)
 As thespinning rate increases, the corresponding band gap energy of the thin filmincreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1.869, 'eV', 4],[196.0, 1.172, 'mA', 6]

CuO
###Optical properties of spin coated and sol-gel dip coated cupric oxide thin films|P. Samarasekara,N. G. K. V. M. Premasiri###
(362501, 362502)
 It was observed that the optical band gap decreases with the numberof CuO layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 1.869, 'eV', 1],[76.0, 1.172, 'mA', 3]

CuO
###Optical properties of spin coated and sol-gel dip coated cupric oxide thin films|P. Samarasekara,N. G. K. V. M. Premasiri###
(362519, 362520)
 The optical band gap values of CuO thin films were between 1.843and 1.869 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1.869, 'eV', 0],[58.0, 1.172, 'mA', 2]

CuO
###Optical properties of spin coated and sol-gel dip coated cupric oxide thin films|P. Samarasekara,N. G. K. V. M. Premasiri###
(362600, 362601)
 Properties of CuO filmssynthesized using sol gel dip coating technique were compared with those of CuOfilms grown using spin coating method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1.869, 'eV', 3],[22.0, 1.172, 'mA', 1]

CuO
###Optical properties of spin coated and sol-gel dip coated cupric oxide thin films|P. Samarasekara,N. G. K. V. M. Premasiri###
(362630, 362631)
 Properties of CuO filmssynthesized using sol gel dip coating technique were compared with those of CuOfilms grown using spin coating method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1.869, 'eV', 3],[52.0, 1.172, 'mA', 1]

Cs
###Ideal Bandgap in a 2D Ruddlesden-Popper Perovskite Chalcogenide for Single-junction Solar Cells|Shanyuan Niu,Debarghya Sarkar,Kristopher Williams,Yucheng Zhou,Yuwei Li,Elisabeth Bianco,Huaixun Huyan,Stephen B. Cronin,Michael E. McConney,Ralf Haiges,R. Jaramillo,David J. Singh,William A. Tisdale,Rehan Kapadia,Jayakanth Ravichandran###
(362695, 362695)
 Transition metal perovskite chalcogenides (TMPCs) are explored as stable,environmentally friendly semiconductors for solar energy conversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'D', 1],[322.0, 1.28, 'eV', 5],[343.0, 0.15, '%', 5],[395.0, 2, 'D', 7]

PCs
###Ideal Bandgap in a 2D Ruddlesden-Popper Perovskite Chalcogenide for Single-junction Solar Cells|Shanyuan Niu,Debarghya Sarkar,Kristopher Williams,Yucheng Zhou,Yuwei Li,Elisabeth Bianco,Huaixun Huyan,Stephen B. Cronin,Michael E. McConney,Ralf Haiges,R. Jaramillo,David J. Singh,William A. Tisdale,Rehan Kapadia,Jayakanth Ravichandran###
(362830, 362831)
Past theoretical studies have predicted large absorption coefficient, desirabledefect characteristics, and bulk photovoltaic effect in TMPCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 2, 'D', 3],[186.0, 1.28, 'eV', 3],[207.0, 0.15, '%', 3],[259.0, 2, 'D', 5]

Ba3Zr2S7
###Ideal Bandgap in a 2D Ruddlesden-Popper Perovskite Chalcogenide for Single-junction Solar Cells|Shanyuan Niu,Debarghya Sarkar,Kristopher Williams,Yucheng Zhou,Yuwei Li,Elisabeth Bianco,Huaixun Huyan,Stephen B. Cronin,Michael E. McConney,Ralf Haiges,R. Jaramillo,David J. Singh,William A. Tisdale,Rehan Kapadia,Jayakanth Ravichandran###
(362954, 362959)
 Here, we report the growth ofsingle crystals of a two-dimensional (2D) perovskite chalcogenide, Ba3Zr2S7,with a natural superlattice-like structure of alternating double-layerperovskite blocks and single-layer rock salt structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 2, 'D', 5],[58.0, 1.28, 'eV', 1],[79.0, 0.15, '%', 1],[131.0, 2, 'D', 3]

In
###Atomistic Mechanism of the Nucleation of Methylammonium Lead Iodide Perovskite from Solution|Paramvir Ahlawat,Pablo Piaggi,Michael Graetzel,Michele Parrinello,Ursula Rothlisberger###
(363158, 363158)
 In the ongoing intense quest to increase the photoconversion efficiencies oflead halide perovskites, it has become evident that optimizing the morphologyof the material is essential to achieve high peformance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Atomistic Mechanism of the Nucleation of Methylammonium Lead Iodide Perovskite from Solution|Paramvir Ahlawat,Pablo Piaggi,Michael Graetzel,Michele Parrinello,Ursula Rothlisberger###
(363306, 363306)
 Here, we performmetadynamics simulations of nucleation of methylammonium lead triiodide (M<missing VAR>API)in order to unravel the atomistic details of perovskite crystallization from agamma-butyrolactone solution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PbI2)
###Atomistic Mechanism of the Nucleation of Methylammonium Lead Iodide Perovskite from Solution|Paramvir Ahlawat,Pablo Piaggi,Michael Graetzel,Michele Parrinello,Ursula Rothlisberger###
(363416, 363420)
 These clusters evolve into lead iodide (PbI2) like structures.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI2
###Atomistic Mechanism of the Nucleation of Methylammonium Lead Iodide Perovskite from Solution|Paramvir Ahlawat,Pablo Piaggi,Michael Graetzel,Michele Parrinello,Ursula Rothlisberger###
(363447, 363449)
Subsequently, methylammonium (M<missing VAR>A+) ions diffuse into this PbI2-likeaggregates triggering the transformation into a perovskite crystal through asolid-solid transformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363601, 363601)
 Charge transport layers (CT<missing VAR>Ls) are key components of diffusion controlledperovskite solar cells, however, they can induce additional non-radiativerecombination pathways which limit the open circuit voltage (VOC) of the cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 21.4, '%', 4]

(VOC)
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363658, 363662)
 Charge transport layers (CT<missing VAR>Ls) are key components of diffusion controlledperovskite solar cells, however, they can induce additional non-radiativerecombination pathways which limit the open circuit voltage (VOC) of the cell.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 21.4, '%', 4]

In
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363672, 363672)
In order to realize the full thermodynamic potential of the perovskiteabsorber, both the electron and hole transport layer (ETL/HTL) need to be asselective as possible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 21.4, '%', 3]

H
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363717, 363717)
In order to realize the full thermodynamic potential of the perovskiteabsorber, both the electron and hole transport layer (ETL/HTL) need to be asselective as possible.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 21.4, '%', 3]

S
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363756, 363756)
 By measuring the quasi-Fermi level splitting (QFLS) ofperovskite/CTL heterojunctions, we quantify the non-radiative interfacialrecombination current for a wide range of commonly used CT<missing VAR>Ls, including varioushole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 21.4, '%', 2]

C
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363764, 363764)
 By measuring the quasi-Fermi level splitting (QFLS) ofperovskite/CTL heterojunctions, we quantify the non-radiative interfacialrecombination current for a wide range of commonly used CT<missing VAR>Ls, including varioushole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 21.4, '%', 2]

C
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363802, 363802)
 By measuring the quasi-Fermi level splitting (QFLS) ofperovskite/CTL heterojunctions, we quantify the non-radiative interfacialrecombination current for a wide range of commonly used CT<missing VAR>Ls, including varioushole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 21.4, '%', 2]

O
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363821, 363821)
 By measuring the quasi-Fermi level splitting (QFLS) ofperovskite/CTL heterojunctions, we quantify the non-radiative interfacialrecombination current for a wide range of commonly used CT<missing VAR>Ls, including varioushole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 21.4, '%', 2]

C
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363848, 363848)
 We findthat all studied CT<missing VAR>Ls limit the VOC by inducing an additional non-radiativerecombination current that is significantly larger than the loss in the neatperovskite and that the least-selective interface sets the upper limit for theVOC of the device.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 21.4, '%', 1]

VOC
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363856, 363858)
 We findthat all studied CT<missing VAR>Ls limit the VOC by inducing an additional non-radiativerecombination current that is significantly larger than the loss in the neatperovskite and that the least-selective interface sets the upper limit for theVOC of the device.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 21.4, '%', 1]

VOC
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363925, 363927)
 We findthat all studied CT<missing VAR>Ls limit the VOC by inducing an additional non-radiativerecombination current that is significantly larger than the loss in the neatperovskite and that the least-selective interface sets the upper limit for theVOC of the device.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 21.4, '%', 1]

VOC
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363948, 363950)
 The results also show that the VOC equals the internalQFLS in the absorber layer of (pin, nip) cells with selective CT<missing VAR>Ls and powerconversion efficiencies of up to 21.4%.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 21.4, '%', 0]

S
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363962, 363962)
 The results also show that the VOC equals the internalQFLS in the absorber layer of (pin, nip) cells with selective CT<missing VAR>Ls and powerconversion efficiencies of up to 21.4%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 21.4, '%', 0]

C
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(363987, 363987)
 The results also show that the VOC equals the internalQFLS in the absorber layer of (pin, nip) cells with selective CT<missing VAR>Ls and powerconversion efficiencies of up to 21.4%.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 21.4, '%', 0]

C
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(364024, 364024)
 However, in case of less selectiveCT<missing VAR>Ls, the VOC is substantially lower than the QFLS which indicates additionallosses at the contacts and/or interfaces.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 21.4, '%', 1]

VOC
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(364031, 364033)
 However, in case of less selectiveCT<missing VAR>Ls, the VOC is substantially lower than the QFLS which indicates additionallosses at the contacts and/or interfaces.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 21.4, '%', 1]

S
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(364048, 364048)
 However, in case of less selectiveCT<missing VAR>Ls, the VOC is substantially lower than the QFLS which indicates additionallosses at the contacts and/or interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 21.4, '%', 1]

VOC
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(364106, 364108)
 The findings are corroborated byrigorous device simulations which outline several important considerations tomaximize the VOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 21.4, '%', 2]

C
###The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells|Martin Stolterfoht,Pietro Caprioglio,Christian M. Wolff,José A. Márquez,Joleik Nordmann,Shanshan Zhang,Daniel Rothhardt,Ulrich Hörmann,Alex Redinger,Lukas Kegelmann,Steve Albrecht,Thomas Kirchartz,Michael Saliba,Thomas Unold,Dieter Neher###
(364180, 364180)
 This work shows that the real challenge to supressnon-radiative recombination losses in perovskite cells on their way to theradiative limit lies in the suppression of carrier recombination at theperovskite/CTL interfaces.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 21.4, '%', 3]

Cu2ZnSnS4
###Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells|Sunghyun Kim,Ji-Sang Park,Samantha N. Hood,Aron Walsh###
(364209, 364214)
Lone-pair effect on carrier capture in Cu2ZnSnS4 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2ZnSnS4
###Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells|Sunghyun Kim,Ji-Sang Park,Samantha N. Hood,Aron Walsh###
(364314, 364319)
 Wecalculate the non-radiative carrier-capture cross sections andShockley-Read-Hall recombination coefficients of deep-level point defects inCu2ZnSnS4 (CZTS) from first-principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells|Sunghyun Kim,Ji-Sang Park,Samantha N. Hood,Aron Walsh###
(364322, 364322)
 Wecalculate the non-radiative carrier-capture cross sections andShockley-Read-Hall recombination coefficients of deep-level point defects inCu2ZnSnS4 (CZTS) from first-principles.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells|Sunghyun Kim,Ji-Sang Park,Samantha N. Hood,Aron Walsh###
(364325, 364325)
 Wecalculate the non-radiative carrier-capture cross sections andShockley-Read-Hall recombination coefficients of deep-level point defects inCu2ZnSnS4 (CZTS) from first-principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells|Sunghyun Kim,Ji-Sang Park,Samantha N. Hood,Aron Walsh###
(364345, 364345)
 While the oxidation state of Snis +4 in stoichiometric CZTS, inert lone pair (5s<missing VAR>2) formation lowers theoxidation state to +2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells|Sunghyun Kim,Ji-Sang Park,Samantha N. Hood,Aron Walsh###
(364357, 364357)
 While the oxidation state of Snis +4 in stoichiometric CZTS, inert lone pair (5s<missing VAR>2) formation lowers theoxidation state to +2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells|Sunghyun Kim,Ji-Sang Park,Samantha N. Hood,Aron Walsh###
(364360, 364360)
 While the oxidation state of Snis +4 in stoichiometric CZTS, inert lone pair (5s<missing VAR>2) formation lowers theoxidation state to +2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn(II)
###Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells|Sunghyun Kim,Ji-Sang Park,Samantha N. Hood,Aron Walsh###
(364481, 364485)
 We find large lattice distortions associated with the lone-pair defectcenters due to the difference in ionic radii between Sn(II) and Sn(IV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn(IV)
###Lone-pair effect on carrier capture in Cu$_2$ZnSnS$_4$ solar cells|Sunghyun Kim,Ji-Sang Park,Samantha N. Hood,Aron Walsh###
(364489, 364493)
 We find large lattice distortions associated with the lone-pair defectcenters due to the difference in ionic radii between Sn(II) and Sn(IV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of Disorder and Anharmonic Fluctuations on the Dynamical Rashba Effect in Purely Inorganic Lead-Halide Perovskites|Arthur Marronnier,Guido Roma,Marcelo Carignano,Yvan Bonnassieux,Claudine Katan,Jacky Even,Edoardo Mosconi,Filippo De Angelis###
(364792, 364792)
 In particular,the study of the recombination mechanisms is thought to be one of the keychallenges towards full comprehension of their working principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPbI3
###Influence of Disorder and Anharmonic Fluctuations on the Dynamical Rashba Effect in Purely Inorganic Lead-Halide Perovskites|Arthur Marronnier,Guido Roma,Marcelo Carignano,Yvan Bonnassieux,Claudine Katan,Jacky Even,Edoardo Mosconi,Filippo De Angelis###
(364879, 364882)
 Usingmolecular dynamics and frozen phonons, we evidence sub-picosecond anharmonicfluctuations in the fully inorganic CsPbI3 perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Influence of Disorder and Anharmonic Fluctuations on the Dynamical Rashba Effect in Purely Inorganic Lead-Halide Perovskites|Arthur Marronnier,Guido Roma,Marcelo Carignano,Yvan Bonnassieux,Claudine Katan,Jacky Even,Edoardo Mosconi,Filippo De Angelis###
(364967, 364967)
 As for timedisorder, we evidence a dynamical Rashba effect which is similar to what wasfound for M<missing VAR>APbI3 and which is still sizable despite temperature disorder,the large investigated supercell, and the absence of the organic cationsmotion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Influence of Disorder and Anharmonic Fluctuations on the Dynamical Rashba Effect in Purely Inorganic Lead-Halide Perovskites|Arthur Marronnier,Guido Roma,Marcelo Carignano,Yvan Bonnassieux,Claudine Katan,Jacky Even,Edoardo Mosconi,Filippo De Angelis###
(365008, 365010)
 As for timedisorder, we evidence a dynamical Rashba effect which is similar to what wasfound for M<missing VAR>APbI3 and which is still sizable despite temperature disorder,the large investigated supercell, and the absence of the organic cationsmotion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Review: Solid-state physics of halide perovskites|Jarvist Moore Frost###
(365214, 365214)
 In this review, we recount the key understanding developed duringthe last five years, through a narrative review of research progress.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3Pb1-xSi
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365600, 365610)
Thermodynamic Stability and Structural Insights for CH3NH3Pb1-xSix<missing VAR>I3, CH3NH3Pb1-xGex<missing VAR>I3, and CH3NH3Pb1-xSnx<missing VAR>I3 Hybrid Perovskite Alloys A Statistical Approach from First Principles Calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[68.0, 20, '%', 1]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365612, 365613)
Thermodynamic Stability and Structural Insights for CH3NH3Pb1-xSix<missing VAR>I3, CH3NH3Pb1-xGex<missing VAR>I3, and CH3NH3Pb1-xSnx<missing VAR>I3 Hybrid Perovskite Alloys A Statistical Approach from First Principles Calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 20, '%', 1]

CH3NH3Pb1-xGe
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365616, 365626)
Thermodynamic Stability and Structural Insights for CH3NH3Pb1-xSix<missing VAR>I3, CH3NH3Pb1-xGex<missing VAR>I3, and CH3NH3Pb1-xSnx<missing VAR>I3 Hybrid Perovskite Alloys A Statistical Approach from First Principles Calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[52.0, 20, '%', 1]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365628, 365629)
Thermodynamic Stability and Structural Insights for CH3NH3Pb1-xSix<missing VAR>I3, CH3NH3Pb1-xGex<missing VAR>I3, and CH3NH3Pb1-xSnx<missing VAR>I3 Hybrid Perovskite Alloys A Statistical Approach from First Principles Calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 20, '%', 1]

CH3NH3Pb1-xSn
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365634, 365644)
Thermodynamic Stability and Structural Insights for CH3NH3Pb1-xSix<missing VAR>I3, CH3NH3Pb1-xGex<missing VAR>I3, and CH3NH3Pb1-xSnx<missing VAR>I3 Hybrid Perovskite Alloys A Statistical Approach from First Principles Calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[34.0, 20, '%', 1]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365646, 365647)
Thermodynamic Stability and Structural Insights for CH3NH3Pb1-xSix<missing VAR>I3, CH3NH3Pb1-xGex<missing VAR>I3, and CH3NH3Pb1-xSnx<missing VAR>I3 Hybrid Perovskite Alloys A Statistical Approach from First Principles Calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 20, '%', 1]

P
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365707, 365707)
 The recent reaching of 20% of conversion efficiency by solar cells based onmetal hybrid perovskites (M<missing VAR>HP), e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 20, '%', 0]

CH3NH3PbI3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365732, 365740)
, the methylammonium (M<missing VAR>A) lead iodide,CH3NH3PbI3 (M<missing VAR>APbI3), has excited the scientific community devoted to thephotovoltaics materials.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 20, '%', 1]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365746, 365747)
, the methylammonium (M<missing VAR>A) lead iodide,CH3NH3PbI3 (M<missing VAR>APbI3), has excited the scientific community devoted to thephotovoltaics materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 20, '%', 1]

Pb
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365782, 365782)
 However, the toxicity of Pb is a hindrance for largescale commercial of M<missing VAR>HP and motivates the search of another congenereco-friendly metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 20, '%', 2]

HP
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365802, 365803)
 However, the toxicity of Pb is a hindrance for largescale commercial of M<missing VAR>HP and motivates the search of another congenereco-friendly metal.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 20, '%', 2]

Pb1-x
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365885, 365888)
 Here, we employed first-principles calculations via densityfunctional theory combined with the generalized quasichemical approximation toinvestigate the structural, thermodynamic, and ordering properties ofM<missing VAR>APb1-xSixI3, M<missing VAR>APb1-xGexI3, and M<missing VAR>APb1-xSnxI3 alloys as pseudo-cubic structures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[207.0, 20, '%', 3]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365890, 365891)
 Here, we employed first-principles calculations via densityfunctional theory combined with the generalized quasichemical approximation toinvestigate the structural, thermodynamic, and ordering properties ofM<missing VAR>APb1-xSixI3, M<missing VAR>APb1-xGexI3, and M<missing VAR>APb1-xSnxI3 alloys as pseudo-cubic structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 20, '%', 3]

Pb1-x
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365896, 365899)
 Here, we employed first-principles calculations via densityfunctional theory combined with the generalized quasichemical approximation toinvestigate the structural, thermodynamic, and ordering properties ofM<missing VAR>APb1-xSixI3, M<missing VAR>APb1-xGexI3, and M<missing VAR>APb1-xSnxI3 alloys as pseudo-cubic structures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[218.0, 20, '%', 3]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365901, 365902)
 Here, we employed first-principles calculations via densityfunctional theory combined with the generalized quasichemical approximation toinvestigate the structural, thermodynamic, and ordering properties ofM<missing VAR>APb1-xSixI3, M<missing VAR>APb1-xGexI3, and M<missing VAR>APb1-xSnxI3 alloys as pseudo-cubic structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 20, '%', 3]

Pb1-x
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365909, 365912)
 Here, we employed first-principles calculations via densityfunctional theory combined with the generalized quasichemical approximation toinvestigate the structural, thermodynamic, and ordering properties ofM<missing VAR>APb1-xSixI3, M<missing VAR>APb1-xGexI3, and M<missing VAR>APb1-xSnxI3 alloys as pseudo-cubic structures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[231.0, 20, '%', 3]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365914, 365915)
 Here, we employed first-principles calculations via densityfunctional theory combined with the generalized quasichemical approximation toinvestigate the structural, thermodynamic, and ordering properties ofM<missing VAR>APb1-xSixI3, M<missing VAR>APb1-xGexI3, and M<missing VAR>APb1-xSnxI3 alloys as pseudo-cubic structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 20, '%', 3]

Si
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365946, 365946)
The inclusion of a smaller second metal, as Si and Ge, strongly affects thestructural properties, reducing the cavity volume occupied by the organiccation and limitating the free orientation under high temperature effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 20, '%', 4]

Ge
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(365950, 365950)
The inclusion of a smaller second metal, as Si and Ge, strongly affects thestructural properties, reducing the cavity volume occupied by the organiccation and limitating the free orientation under high temperature effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 20, '%', 4]

Pb1-x
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(366027, 366030)
Unstable and metaestable phases are observed at room temperature forM<missing VAR>APb1-xSixI3, whereas M<missing VAR>APb1-xGexI3 is energetically favored for Pb-rich inordered phases even at very low temperatures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[349.0, 20, '%', 5]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(366032, 366033)
Unstable and metaestable phases are observed at room temperature forM<missing VAR>APb1-xSixI3, whereas M<missing VAR>APb1-xGexI3 is energetically favored for Pb-rich inordered phases even at very low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 20, '%', 5]

Pb1-x
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(366040, 366043)
Unstable and metaestable phases are observed at room temperature forM<missing VAR>APb1-xSixI3, whereas M<missing VAR>APb1-xGexI3 is energetically favored for Pb-rich inordered phases even at very low temperatures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[362.0, 20, '%', 5]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(366045, 366046)
Unstable and metaestable phases are observed at room temperature forM<missing VAR>APb1-xSixI3, whereas M<missing VAR>APb1-xGexI3 is energetically favored for Pb-rich inordered phases even at very low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 20, '%', 5]

Pb
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(366056, 366056)
Unstable and metaestable phases are observed at room temperature forM<missing VAR>APb1-xSixI3, whereas M<missing VAR>APb1-xGexI3 is energetically favored for Pb-rich inordered phases even at very low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 20, '%', 5]

Pb
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(366090, 366090)
 Conversely, the high miscibilityof Pb and Sn into M<missing VAR>APb1-xSnxI3 yields an alloy energetically favored as apseudo-cubic random alloy with tunable properties at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 20, '%', 6]

Sn
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(366094, 366094)
 Conversely, the high miscibilityof Pb and Sn into M<missing VAR>APb1-xSnxI3 yields an alloy energetically favored as apseudo-cubic random alloy with tunable properties at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 20, '%', 6]

Pb1-x
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(366100, 366103)
 Conversely, the high miscibilityof Pb and Sn into M<missing VAR>APb1-xSnxI3 yields an alloy energetically favored as apseudo-cubic random alloy with tunable properties at room temperature.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[422.0, 20, '%', 6]

I3
###Thermodynamic Stability and Structural Insights for CH$_3$NH$_3$Pb$_{1-x}$Si$_x$I$_3$, CH$_3$NH$_3$Pb$_{1-x}$Ge$_x$I$_3$, and CH$_3$NH$_3$Pb$_{1-x}$Sn$_x$I$_3$ Hybrid Perovskite Alloys: A Statistical Approach from First Principles Calculations|Diego Guedes-Sobrinho,Ivan Guilhon,Marcelo Marques,Lara K. Teles###
(366105, 366106)
 Conversely, the high miscibilityof Pb and Sn into M<missing VAR>APb1-xSnxI3 yields an alloy energetically favored as apseudo-cubic random alloy with tunable properties at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[427.0, 20, '%', 6]

CH3NH3PbI3
###Free-electron effects on optical absorption of hybrid perovskite CH$_3$NH$_3$PbI$_3$ from first principles|Joshua Leveillee,André Schleife###
(366170, 366178)
Free-electron effects on optical absorption of hybrid perovskite CH3NH3PbI3 from first principles.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Free-electron effects on optical absorption of hybrid perovskite CH$_3$NH$_3$PbI$_3$ from first principles|Joshua Leveillee,André Schleife###
(366215, 366216)
 Hybrid organic-inorganic perovskites, such as methyl-ammonium lead tri-iodide(M<missing VAR>APbI3), are interesting candidates for efficient absorber materials innext-generation solar cells, partly due to an unusual combination of lowexciton binding energy and strong optical absorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbI3
###Free-electron effects on optical absorption of hybrid perovskite CH$_3$NH$_3$PbI$_3$ from first principles|Joshua Leveillee,André Schleife###
(366414, 366416)
 Here we use cutting-edge first-principlestheoretical spectroscopy, based on density-functional and many-bodyperturbation theory, to study atomic geometries, electronic structure, andoptical properties of three M<missing VAR>APbI3 polymorphs and find good agreement withearlier results and experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAlB14
###Proposed high-power beta cells from MgAlB14-type icosahedral-boron semiconductors|David Emin###
(366639, 366642)
Proposed high-power beta cells from MgAlB14-type icosahedral-boron semiconductors.
Featurization terminated normally.
0,0,0,0,0.875,0,0,0,0,0,0,0.0625,0.0625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Proposed high-power beta cells from MgAlB14-type icosahedral-boron semiconductors|David Emin###
(366826, 366826)
 Furthermore, substitutions for Mg and Al atoms oficosahedral-boron-rich semiconductors based on the MgAlB14 structure canproduce p-n junctions as electron transfers from doping-induced interstitialextra-icosahedral atoms convert some normally p<missing VAR>-type materials to n<missing VAR>-type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Proposed high-power beta cells from MgAlB14-type icosahedral-boron semiconductors|David Emin###
(366830, 366830)
 Furthermore, substitutions for Mg and Al atoms oficosahedral-boron-rich semiconductors based on the MgAlB14 structure canproduce p-n junctions as electron transfers from doping-induced interstitialextra-icosahedral atoms convert some normally p<missing VAR>-type materials to n<missing VAR>-type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAlB14
###Proposed high-power beta cells from MgAlB14-type icosahedral-boron semiconductors|David Emin###
(366851, 366854)
 Furthermore, substitutions for Mg and Al atoms oficosahedral-boron-rich semiconductors based on the MgAlB14 structure canproduce p-n junctions as electron transfers from doping-induced interstitialextra-icosahedral atoms convert some normally p<missing VAR>-type materials to n<missing VAR>-type.
Featurization terminated normally.
0,0,0,0,0.875,0,0,0,0,0,0,0.0625,0.0625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367155, 367155)
 Organic molecular hole-transport materials (HT<missing VAR>Ms) are appealing for thescalable manufacture of perovskite solar cells (PSCs) because they are easierto reproducibly prepare in high purity than polymeric and inorganic HT<missing VAR>Ms.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 20, '%', 1],[132.0, 20.6, '%', 2],[352.0, 2, 'um', 5]

(PSCs)
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367181, 367185)
 Organic molecular hole-transport materials (HT<missing VAR>Ms) are appealing for thescalable manufacture of perovskite solar cells (PSCs) because they are easierto reproducibly prepare in high purity than polymeric and inorganic HT<missing VAR>Ms.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 20, '%', 1],[102.0, 20.6, '%', 2],[322.0, 2, 'um', 5]

H
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367216, 367216)
 Organic molecular hole-transport materials (HT<missing VAR>Ms) are appealing for thescalable manufacture of perovskite solar cells (PSCs) because they are easierto reproducibly prepare in high purity than polymeric and inorganic HT<missing VAR>Ms.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 20, '%', 1],[71.0, 20.6, '%', 2],[291.0, 2, 'um', 5]

PSCs
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367236, 367238)
 Thereis also a need to construct PSCs without dopants and additives to avoidformidable engineering and stability issues.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 20, '%', 2],[49.0, 20.6, '%', 1],[269.0, 2, 'um', 4]

PC
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367280, 367281)
 We report here a power conversionefficiency (PCE) of 20.6% with a molecular HTM in an inverted (p-i-n) PSCwithout any dopants or interlayers.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 20, '%', 3],[6.0, 20.6, '%', 0],[226.0, 2, 'um', 3]

H
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367296, 367296)
 We report here a power conversionefficiency (PCE) of 20.6% with a molecular HTM in an inverted (p-i-n) PSCwithout any dopants or interlayers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 20, '%', 3],[9.0, 20.6, '%', 0],[211.0, 2, 'um', 3]

PSC
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367314, 367316)
 We report here a power conversionefficiency (PCE) of 20.6% with a molecular HTM in an inverted (p-i-n) PSCwithout any dopants or interlayers.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 20, '%', 3],[27.0, 20.6, '%', 0],[191.0, 2, 'um', 3]

H
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367363, 367363)
 This new benchmark was made possible by thediscovery that annealing a spiro-based dopant-free HTM (denoted D<missing VAR>FH) containingredox-active triphenyl amine (T<missing VAR>PA) units undergoes preferential molecularorganization normal to the substrate.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 20, '%', 4],[76.0, 20.6, '%', 1],[144.0, 2, 'um', 2]

H
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367372, 367372)
 This new benchmark was made possible by thediscovery that annealing a spiro-based dopant-free HTM (denoted D<missing VAR>FH) containingredox-active triphenyl amine (T<missing VAR>PA) units undergoes preferential molecularorganization normal to the substrate.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 20, '%', 4],[85.0, 20.6, '%', 1],[135.0, 2, 'um', 2]

P
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367388, 367388)
 This new benchmark was made possible by thediscovery that annealing a spiro-based dopant-free HTM (denoted D<missing VAR>FH) containingredox-active triphenyl amine (T<missing VAR>PA) units undergoes preferential molecularorganization normal to the substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 20, '%', 4],[101.0, 20.6, '%', 1],[119.0, 2, 'um', 2]

FH
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367437, 367438)
 This structural order, governed by thestrong intermolecular interactions of the D<missing VAR>FH dioxane groups, affords highintrinsic hole mobility (1x<missing VAR>10-3 cm2 V-1 s<missing VAR>-1).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 20, '%', 5],[150.0, 20.6, '%', 2],[69.0, 2, 'um', 1]

V
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367466, 367466)
 This structural order, governed by thestrong intermolecular interactions of the D<missing VAR>FH dioxane groups, affords highintrinsic hole mobility (1x<missing VAR>10-3 cm2 V-1 s<missing VAR>-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 20, '%', 5],[179.0, 20.6, '%', 2],[41.0, 2, 'um', 1]

FH
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367483, 367484)
 Annealing films of D<missing VAR>FH alsoenables the growth of large perovskite grains (up to 2 um) that minimize chargerecombination in the PSC.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 20, '%', 6],[196.0, 20.6, '%', 3],[23.0, 2, 'um', 0]

PSC
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367523, 367525)
 Annealing films of D<missing VAR>FH alsoenables the growth of large perovskite grains (up to 2 um) that minimize chargerecombination in the PSC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 20, '%', 6],[236.0, 20.6, '%', 3],[16.0, 2, 'um', 0]

FH
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367529, 367530)
 D<missing VAR>FH can also be isolated at a fraction of the cost ofany other organic HTM.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 20, '%', 7],[242.0, 20.6, '%', 4],[22.0, 2, 'um', 1]

H
###Dopant-free molecular hole transport material that mediates a 20% power conversion efficiency in a perovskite solar cell|Yang Cao,Yunlong Li,Thomas Morrissey,Brian Lam,Brian O. Patrick,David J. Dvorak,Zhicheng Xia,Timothy L. Kelly,Curtis P. Berlinguette###
(367561, 367561)
 D<missing VAR>FH can also be isolated at a fraction of the cost ofany other organic HTM.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[437.0, 20, '%', 7],[274.0, 20.6, '%', 4],[54.0, 2, 'um', 1]

(PSCs)
###Charge transport layer dependent electronic band bending in perovskite solar cells and its correlation to device degradation|Junseop Byeon,Jutae Kim,Ji-Young Kim,Gunhee Lee,Kijoon Bang,Namyoung Ahn,Mansoo Choi###
(367615, 367619)
 Perovskite solar cells (PSCs) have shown remarkably improved power-conversionefficiency of around 25%.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 25, '%', 0]

In
###Charge transport layer dependent electronic band bending in perovskite solar cells and its correlation to device degradation|Junseop Byeon,Jutae Kim,Ji-Young Kim,Gunhee Lee,Kijoon Bang,Namyoung Ahn,Mansoo Choi###
(367677, 367677)
 In this report, we revealed thatthe working mechanism of PSCs is explained by a dominant pn junction occurringat the different interface depending on electron transport layer, and chargesare accumulated at the corresponding dominant junction initiating devicedegradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 25, '%', 2]

PSCs
###Charge transport layer dependent electronic band bending in perovskite solar cells and its correlation to device degradation|Junseop Byeon,Jutae Kim,Ji-Young Kim,Gunhee Lee,Kijoon Bang,Namyoung Ahn,Mansoo Choi###
(367699, 367701)
 In this report, we revealed thatthe working mechanism of PSCs is explained by a dominant pn junction occurringat the different interface depending on electron transport layer, and chargesare accumulated at the corresponding dominant junction initiating devicedegradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 25, '%', 2]

PCS
###Charge transport layer dependent electronic band bending in perovskite solar cells and its correlation to device degradation|Junseop Byeon,Jutae Kim,Ji-Young Kim,Gunhee Lee,Kijoon Bang,Namyoung Ahn,Mansoo Choi###
(367812, 367814)
 Locations of a dominant pn junction, the electric field, andcarrier-density distribution with respect to electron-transport layers in thePCS devices were investigated by using the electron-beam-induced currentmeasurement and Kelvin probe force microscopy.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 25, '%', 3]

S
###Charge transport layer dependent electronic band bending in perovskite solar cells and its correlation to device degradation|Junseop Byeon,Jutae Kim,Ji-Young Kim,Gunhee Lee,Kijoon Bang,Namyoung Ahn,Mansoo Choi###
(367900, 367900)
 The amount of accumulatedcharges in the devices was analyzed using the charge-extraction method and thedegradation process of devices was confirmed by SEM measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 25, '%', 4]

PSC
###Charge transport layer dependent electronic band bending in perovskite solar cells and its correlation to device degradation|Junseop Byeon,Jutae Kim,Ji-Young Kim,Gunhee Lee,Kijoon Bang,Namyoung Ahn,Mansoo Choi###
(368015, 368017)
 From theseobservations, we identified that the dominant pn junction appears at theinterface where the degree of band bending is higher compared to the otherinterface, and charges are accumulated at the corresponding junction where thedevice degradation is initiated, which suggests that there exists a strongcorrelation between PSC working principle and device degradation.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 25, '%', 5]

PSC
###Charge transport layer dependent electronic band bending in perovskite solar cells and its correlation to device degradation|Junseop Byeon,Jutae Kim,Ji-Young Kim,Gunhee Lee,Kijoon Bang,Namyoung Ahn,Mansoo Choi###
(368043, 368045)
 We highlightthat an ideal pin PSC that can minimize the degree of band bending should bedesigned for ensuring long-term stability, via using proper selective contacts<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 25, '%', 6]

III
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368113, 368115)
Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368117, 368117)
Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368248, 368250)
 Because III-V semiconductors have a wide range offunctional material applications (including optoelectronic devices,light-emitting diodes, and highly efficient solar cells), and because Bi-dopedIII-V materials can be synthesized by ion plantation and ion-cutoff methods, werevisit the effect of bismuth substitution in metastable III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368252, 368252)
 Because III-V semiconductors have a wide range offunctional material applications (including optoelectronic devices,light-emitting diodes, and highly efficient solar cells), and because Bi-dopedIII-V materials can be synthesized by ion plantation and ion-cutoff methods, werevisit the effect of bismuth substitution in metastable III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368305, 368305)
 Because III-V semiconductors have a wide range offunctional material applications (including optoelectronic devices,light-emitting diodes, and highly efficient solar cells), and because Bi-dopedIII-V materials can be synthesized by ion plantation and ion-cutoff methods, werevisit the effect of bismuth substitution in metastable III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368310, 368312)
 Because III-V semiconductors have a wide range offunctional material applications (including optoelectronic devices,light-emitting diodes, and highly efficient solar cells), and because Bi-dopedIII-V materials can be synthesized by ion plantation and ion-cutoff methods, werevisit the effect of bismuth substitution in metastable III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368314, 368314)
 Because III-V semiconductors have a wide range offunctional material applications (including optoelectronic devices,light-emitting diodes, and highly efficient solar cells), and because Bi-dopedIII-V materials can be synthesized by ion plantation and ion-cutoff methods, werevisit the effect of bismuth substitution in metastable III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368358, 368360)
 Because III-V semiconductors have a wide range offunctional material applications (including optoelectronic devices,light-emitting diodes, and highly efficient solar cells), and because Bi-dopedIII-V materials can be synthesized by ion plantation and ion-cutoff methods, werevisit the effect of bismuth substitution in metastable III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368362, 368362)
 Because III-V semiconductors have a wide range offunctional material applications (including optoelectronic devices,light-emitting diodes, and highly efficient solar cells), and because Bi-dopedIII-V materials can be synthesized by ion plantation and ion-cutoff methods, werevisit the effect of bismuth substitution in metastable III-V semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368392, 368394)
Through first-principles calculation methods, we show that in wurtzitestructure III-V materials, Bi substitution can lead to band inversion phenomenaand induce nontrivial topological properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368396, 368396)
Through first-principles calculation methods, we show that in wurtzitestructure III-V materials, Bi substitution can lead to band inversion phenomenaand induce nontrivial topological properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368401, 368401)
Through first-principles calculation methods, we show that in wurtzitestructure III-V materials, Bi substitution can lead to band inversion phenomenaand induce nontrivial topological properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaBi
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368439, 368440)
 Specifically, we identify thatGaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence ofDirac points and Weyl points, and textGaAs0.5 textBi0.5,textGaSb0.5 textBi0.5, textInSb0.5 textBi0.5 aretriple-point semimetals, characterized by two sets of near Dirac triplepoints on the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InBi
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368444, 368445)
 Specifically, we identify thatGaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence ofDirac points and Weyl points, and textGaAs0.5 textBi0.5,textGaSb0.5 textBi0.5, textInSb0.5 textBi0.5 aretriple-point semimetals, characterized by two sets of near Dirac triplepoints on the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs0.5
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368481, 368483)
 Specifically, we identify thatGaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence ofDirac points and Weyl points, and textGaAs0.5 textBi0.5,textGaSb0.5 textBi0.5, textInSb0.5 textBi0.5 aretriple-point semimetals, characterized by two sets of near Dirac triplepoints on the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi0.5
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368486, 368487)
 Specifically, we identify thatGaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence ofDirac points and Weyl points, and textGaAs0.5 textBi0.5,textGaSb0.5 textBi0.5, textInSb0.5 textBi0.5 aretriple-point semimetals, characterized by two sets of near Dirac triplepoints on the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaSb0.5
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368492, 368494)
 Specifically, we identify thatGaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence ofDirac points and Weyl points, and textGaAs0.5 textBi0.5,textGaSb0.5 textBi0.5, textInSb0.5 textBi0.5 aretriple-point semimetals, characterized by two sets of near Dirac triplepoints on the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi0.5
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368497, 368498)
 Specifically, we identify thatGaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence ofDirac points and Weyl points, and textGaAs0.5 textBi0.5,textGaSb0.5 textBi0.5, textInSb0.5 textBi0.5 aretriple-point semimetals, characterized by two sets of near Dirac triplepoints on the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb0.5
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368502, 368504)
 Specifically, we identify thatGaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence ofDirac points and Weyl points, and textGaAs0.5 textBi0.5,textGaSb0.5 textBi0.5, textInSb0.5 textBi0.5 aretriple-point semimetals, characterized by two sets of near Dirac triplepoints on the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi0.5
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368507, 368508)
 Specifically, we identify thatGaBi and InBi are Dirac-Weyl semimetals, characterized by the coexistence ofDirac points and Weyl points, and textGaAs0.5 textBi0.5,textGaSb0.5 textBi0.5, textInSb0.5 textBi0.5 aretriple-point semimetals, characterized by two sets of near Dirac triplepoints on the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368582, 368584)
 These experimentally-accessible bismuth-basedtopological semimetals can be integrated into the large family of functionalIII-V materials for experimental studies of heterostructures and futureoptoelectronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Ideal near-Dirac triple-point semimetal in III-V semiconductor alloys|Zhenyao Fang,Heng Gao,Jörn W. F. Venderbos,Andrew M. Rappe###
(368586, 368586)
 These experimentally-accessible bismuth-basedtopological semimetals can be integrated into the large family of functionalIII-V materials for experimental studies of heterostructures and futureoptoelectronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Self-formed 2D/3D Heterostructure on the Edge of 2D Ruddlesden-Popper Hybrid Perovskites Responsible for Intriguing Optoelectronic Properties and Higher Cell Efficiency|Zhaojun Qin,Shenyu Dai,Chalapathi Charan Gajjala,Chong Wang,Viktor G. Hadjiev,Guang Yang,Jiabing Li,Xin Zhong,Zhongjia Tang,Yan Yao,Arnold M. Guloy,Rohith Reddy,David Mayerich,Liangzi Deng,Qingkai Yu,Guoying Feng,Zhiming Wang,Jiming Bao###
(368796, 368796)
 Using 2D (BA)2(M<missing VAR>A)2Pb3Br10 as an example, we show that 3D M<missing VAR>APbBr3is formed due to the loss of BA on the edge.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'D', 3],[161.0, 2, 'D', 3],[3.0, 2, 'D', 0],[26.0, 3, 'D', 0],[120.0, 2, 'D', 1],[153.0, 2, 'D', 1],[167.0, 3, 'D', 2],[206.0, 2, 'D', 2],[257.0, 2, 'D', 3],[275.0, 2, 'D', 3]

Pb3Br10
###Self-formed 2D/3D Heterostructure on the Edge of 2D Ruddlesden-Popper Hybrid Perovskites Responsible for Intriguing Optoelectronic Properties and Higher Cell Efficiency|Zhaojun Qin,Shenyu Dai,Chalapathi Charan Gajjala,Chong Wang,Viktor G. Hadjiev,Guang Yang,Jiabing Li,Xin Zhong,Zhongjia Tang,Yan Yao,Arnold M. Guloy,Rohith Reddy,David Mayerich,Liangzi Deng,Qingkai Yu,Guoying Feng,Zhiming Wang,Jiming Bao###
(368805, 368808)
 Using 2D (BA)2(M<missing VAR>A)2Pb3Br10 as an example, we show that 3D M<missing VAR>APbBr3is formed due to the loss of BA on the edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, 'D', 3],[170.0, 2, 'D', 3],[12.0, 2, 'D', 0],[14.0, 3, 'D', 0],[108.0, 2, 'D', 1],[141.0, 2, 'D', 1],[155.0, 3, 'D', 2],[194.0, 2, 'D', 2],[245.0, 2, 'D', 3],[263.0, 2, 'D', 3]

PbBr3
###Self-formed 2D/3D Heterostructure on the Edge of 2D Ruddlesden-Popper Hybrid Perovskites Responsible for Intriguing Optoelectronic Properties and Higher Cell Efficiency|Zhaojun Qin,Shenyu Dai,Chalapathi Charan Gajjala,Chong Wang,Viktor G. Hadjiev,Guang Yang,Jiabing Li,Xin Zhong,Zhongjia Tang,Yan Yao,Arnold M. Guloy,Rohith Reddy,David Mayerich,Liangzi Deng,Qingkai Yu,Guoying Feng,Zhiming Wang,Jiming Bao###
(368826, 368828)
 Using 2D (BA)2(M<missing VAR>A)2Pb3Br10 as an example, we show that 3D M<missing VAR>APbBr3is formed due to the loss of BA on the edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2, 'D', 3],[191.0, 2, 'D', 3],[33.0, 2, 'D', 0],[4.0, 3, 'D', 0],[88.0, 2, 'D', 1],[121.0, 2, 'D', 1],[135.0, 3, 'D', 2],[174.0, 2, 'D', 2],[225.0, 2, 'D', 3],[243.0, 2, 'D', 3]

B
###Self-formed 2D/3D Heterostructure on the Edge of 2D Ruddlesden-Popper Hybrid Perovskites Responsible for Intriguing Optoelectronic Properties and Higher Cell Efficiency|Zhaojun Qin,Shenyu Dai,Chalapathi Charan Gajjala,Chong Wang,Viktor G. Hadjiev,Guang Yang,Jiabing Li,Xin Zhong,Zhongjia Tang,Yan Yao,Arnold M. Guloy,Rohith Reddy,David Mayerich,Liangzi Deng,Qingkai Yu,Guoying Feng,Zhiming Wang,Jiming Bao###
(368845, 368845)
 Using 2D (BA)2(M<missing VAR>A)2Pb3Br10 as an example, we show that 3D M<missing VAR>APbBr3is formed due to the loss of BA on the edge.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 2, 'D', 3],[210.0, 2, 'D', 3],[52.0, 2, 'D', 0],[23.0, 3, 'D', 0],[71.0, 2, 'D', 1],[104.0, 2, 'D', 1],[118.0, 3, 'D', 2],[157.0, 2, 'D', 2],[208.0, 2, 'D', 3],[226.0, 2, 'D', 3]

PbBr3
###Self-formed 2D/3D Heterostructure on the Edge of 2D Ruddlesden-Popper Hybrid Perovskites Responsible for Intriguing Optoelectronic Properties and Higher Cell Efficiency|Zhaojun Qin,Shenyu Dai,Chalapathi Charan Gajjala,Chong Wang,Viktor G. Hadjiev,Guang Yang,Jiabing Li,Xin Zhong,Zhongjia Tang,Yan Yao,Arnold M. Guloy,Rohith Reddy,David Mayerich,Liangzi Deng,Qingkai Yu,Guoying Feng,Zhiming Wang,Jiming Bao###
(368863, 368865)
 This self-formed M<missing VAR>APbBr3 canexplain the reported edge emission under various conditions, while the reportedintriguing optoelectronic properties such as fast exciton trapping from theinterior 2D perovskite, rapid exciton dissociation and long carrier lifetimecan be understood via the self-formed 2D/3D<missing VAR> lateral perovskite heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2, 'D', 4],[228.0, 2, 'D', 4],[70.0, 2, 'D', 1],[41.0, 3, 'D', 1],[51.0, 2, 'D', 0],[84.0, 2, 'D', 0],[98.0, 3, 'D', 1],[137.0, 2, 'D', 1],[188.0, 2, 'D', 2],[206.0, 2, 'D', 2]

B
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369109, 369109)
Computational Study of Defect variant Perovskites A2BX<missing VAR>6 for Photovoltaic Applications.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 10, 'eV', 7]

B
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369204, 369204)
 The calculations are performed for the compound of thetype A2BX<missing VAR>6 with ARb, and Cs; BSn, Pd, and Pt; and X<missing VAR>Cl, Br, and I.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 10, 'eV', 5]

Rb
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369211, 369211)
 The calculations are performed for the compound of thetype A2BX<missing VAR>6 with ARb, and Cs; BSn, Pd, and Pt; and X<missing VAR>Cl, Br, and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 10, 'eV', 5]

Cs
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369216, 369216)
 The calculations are performed for the compound of thetype A2BX<missing VAR>6 with ARb, and Cs; BSn, Pd, and Pt; and X<missing VAR>Cl, Br, and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 10, 'eV', 5]

BSn
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369219, 369220)
 The calculations are performed for the compound of thetype A2BX<missing VAR>6 with ARb, and Cs; BSn, Pd, and Pt; and X<missing VAR>Cl, Br, and I.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 10, 'eV', 5]

Pd
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369223, 369223)
 The calculations are performed for the compound of thetype A2BX<missing VAR>6 with ARb, and Cs; BSn, Pd, and Pt; and X<missing VAR>Cl, Br, and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 10, 'eV', 5]

Pt
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369228, 369228)
 The calculations are performed for the compound of thetype A2BX<missing VAR>6 with ARb, and Cs; BSn, Pd, and Pt; and X<missing VAR>Cl, Br, and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 10, 'eV', 5]

Cl
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369234, 369234)
 The calculations are performed for the compound of thetype A2BX<missing VAR>6 with ARb, and Cs; BSn, Pd, and Pt; and X<missing VAR>Cl, Br, and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 10, 'eV', 5]

Br
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369237, 369237)
 The calculations are performed for the compound of thetype A2BX<missing VAR>6 with ARb, and Cs; BSn, Pd, and Pt; and X<missing VAR>Cl, Br, and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 10, 'eV', 5]

I
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369242, 369242)
 The calculations are performed for the compound of thetype A2BX<missing VAR>6 with ARb, and Cs; BSn, Pd, and Pt; and X<missing VAR>Cl, Br, and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 10, 'eV', 5]

Cl
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369336, 369336)
 The computed band gap reveals a semiconductingprofile for all these compounds showing a decreasing trend of the band gapenergy by changing the halide ions consecutively from Cl to Br and Br to I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 10, 'eV', 3]

Br
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369340, 369340)
 The computed band gap reveals a semiconductingprofile for all these compounds showing a decreasing trend of the band gapenergy by changing the halide ions consecutively from Cl to Br and Br to I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 10, 'eV', 3]

Br
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369344, 369344)
 The computed band gap reveals a semiconductingprofile for all these compounds showing a decreasing trend of the band gapenergy by changing the halide ions consecutively from Cl to Br and Br to I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 10, 'eV', 3]

I
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369348, 369348)
 The computed band gap reveals a semiconductingprofile for all these compounds showing a decreasing trend of the band gapenergy by changing the halide ions consecutively from Cl to Br and Br to I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 10, 'eV', 3]

B
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369363, 369363)
However, for variation in the B-site cation, the band gap increases by changingthe cation from Pd to Pt via Sn.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 10, 'eV', 2]

Pd
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369389, 369389)
However, for variation in the B-site cation, the band gap increases by changingthe cation from Pd to Pt via Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 10, 'eV', 2]

Pt
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369393, 369393)
However, for variation in the B-site cation, the band gap increases by changingthe cation from Pd to Pt via Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 10, 'eV', 2]

Sn
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369397, 369397)
However, for variation in the B-site cation, the band gap increases by changingthe cation from Pd to Pt via Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 10, 'eV', 2]

Rb2PdBr6
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369409, 369413)
 The most likely compounds, Rb2PdBr6 andCs2PtI6, exhibit a band gap within the optimal range of 0.9-1.6 e<missing VAR>V forsingle-junction photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 10, 'eV', 1]

Cs2PtI6
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369418, 369422)
 The most likely compounds, Rb2PdBr6 andCs2PtI6, exhibit a band gap within the optimal range of 0.9-1.6 e<missing VAR>V forsingle-junction photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 10, 'eV', 1]

V
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369448, 369448)
 The most likely compounds, Rb2PdBr6 andCs2PtI6, exhibit a band gap within the optimal range of 0.9-1.6 e<missing VAR>V forsingle-junction photovoltaic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 10, 'eV', 1]

Cl
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369540, 369540)
Our results indicate that upon changing the halogen ions (Cl by Br and Br by I)the optical properties altered significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 10, 'eV', 1]

Br
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369544, 369544)
Our results indicate that upon changing the halogen ions (Cl by Br and Br by I)the optical properties altered significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 10, 'eV', 1]

Br
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369548, 369548)
Our results indicate that upon changing the halogen ions (Cl by Br and Br by I)the optical properties altered significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 10, 'eV', 1]

I
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369552, 369552)
Our results indicate that upon changing the halogen ions (Cl by Br and Br by I)the optical properties altered significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 10, 'eV', 1]

Rb2PdI6
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369588, 369592)
 Maximum dielectric constants andhigh optical absorption are found for Rb2PdI6 and Cs2PtI6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 10, 'eV', 2]

Cs2PtI6
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369596, 369600)
 Maximum dielectric constants andhigh optical absorption are found for Rb2PdI6 and Cs2PtI6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 10, 'eV', 2]

B
###Computational Study of Defect variant Perovskites A2BX6 for Photovoltaic Applications|M. Faizan,K. C. Bhamu,S. H. Khan,G. Murtaza,Xin He###
(369641, 369641)
 The uniqueoptoelectronic properties such as ideal band gap, high dielectric constants,and optimum absorption of A2BX<missing VAR>6 perovskites could be efficiently utilized indesigning high performance single and multi-junction perovskite solar cells.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 10, 'eV', 3]

S
###Determining the three-dimensional atomic structure of a metallic glass|Yao Yang,Jihan Zhou,Fan Zhu,Yakun Yuan,Dillan Chang,Dennis S. Kim,Minh Pham,Arjun Rana,Xuezeng Tian,Yonggang Yao,Stanley Osher,Andreas K. Schmid,Liangbing Hu,Peter Ercius,Jianwei Miao###
(369916, 369916)
 We quantitatively characterize theshort-range order (SR<missing VAR>O) and medium-range order (MRO) of the 3D atomicarrangement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'D', 1],[22.0, 3, 'D', 0],[39.0, 3, 'D', 1],[181.0, 3, 'D', 3],[244.0, 3, 'D', 4],[284.0, 3, 'D', 4]

O
###Determining the three-dimensional atomic structure of a metallic glass|Yao Yang,Jihan Zhou,Fan Zhu,Yakun Yuan,Dillan Chang,Dennis S. Kim,Minh Pham,Arjun Rana,Xuezeng Tian,Yonggang Yao,Stanley Osher,Andreas K. Schmid,Liangbing Hu,Peter Ercius,Jianwei Miao###
(369918, 369918)
 We quantitatively characterize theshort-range order (SR<missing VAR>O) and medium-range order (MRO) of the 3D atomicarrangement.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, 'D', 1],[20.0, 3, 'D', 0],[37.0, 3, 'D', 1],[179.0, 3, 'D', 3],[242.0, 3, 'D', 4],[282.0, 3, 'D', 4]

O
###Determining the three-dimensional atomic structure of a metallic glass|Yao Yang,Jihan Zhou,Fan Zhu,Yakun Yuan,Dillan Chang,Dennis S. Kim,Minh Pham,Arjun Rana,Xuezeng Tian,Yonggang Yao,Stanley Osher,Andreas K. Schmid,Liangbing Hu,Peter Ercius,Jianwei Miao###
(369932, 369932)
 We quantitatively characterize theshort-range order (SR<missing VAR>O) and medium-range order (MRO) of the 3D atomicarrangement.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3, 'D', 1],[6.0, 3, 'D', 0],[23.0, 3, 'D', 1],[165.0, 3, 'D', 3],[228.0, 3, 'D', 4],[268.0, 3, 'D', 4]

S
###Determining the three-dimensional atomic structure of a metallic glass|Yao Yang,Jihan Zhou,Fan Zhu,Yakun Yuan,Dillan Chang,Dennis S. Kim,Minh Pham,Arjun Rana,Xuezeng Tian,Yonggang Yao,Stanley Osher,Andreas K. Schmid,Liangbing Hu,Peter Ercius,Jianwei Miao###
(369965, 369965)
 We find that although the 3D atomic packing of the SR<missing VAR>O isgeometrically disordered, some SR<missing VAR>O connect with each other to form crystal-likenetworks and give rise to MRO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, 'D', 2],[27.0, 3, 'D', 1],[10.0, 3, 'D', 0],[132.0, 3, 'D', 2],[195.0, 3, 'D', 3],[235.0, 3, 'D', 3]

O
###Determining the three-dimensional atomic structure of a metallic glass|Yao Yang,Jihan Zhou,Fan Zhu,Yakun Yuan,Dillan Chang,Dennis S. Kim,Minh Pham,Arjun Rana,Xuezeng Tian,Yonggang Yao,Stanley Osher,Andreas K. Schmid,Liangbing Hu,Peter Ercius,Jianwei Miao###
(369967, 369967)
 We find that although the 3D atomic packing of the SR<missing VAR>O isgeometrically disordered, some SR<missing VAR>O connect with each other to form crystal-likenetworks and give rise to MRO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 3, 'D', 2],[29.0, 3, 'D', 1],[12.0, 3, 'D', 0],[130.0, 3, 'D', 2],[193.0, 3, 'D', 3],[233.0, 3, 'D', 3]

S
###Determining the three-dimensional atomic structure of a metallic glass|Yao Yang,Jihan Zhou,Fan Zhu,Yakun Yuan,Dillan Chang,Dennis S. Kim,Minh Pham,Arjun Rana,Xuezeng Tian,Yonggang Yao,Stanley Osher,Andreas K. Schmid,Liangbing Hu,Peter Ercius,Jianwei Miao###
(369979, 369979)
 We find that although the 3D atomic packing of the SR<missing VAR>O isgeometrically disordered, some SR<missing VAR>O connect with each other to form crystal-likenetworks and give rise to MRO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3, 'D', 2],[41.0, 3, 'D', 1],[24.0, 3, 'D', 0],[118.0, 3, 'D', 2],[181.0, 3, 'D', 3],[221.0, 3, 'D', 3]

O
###Determining the three-dimensional atomic structure of a metallic glass|Yao Yang,Jihan Zhou,Fan Zhu,Yakun Yuan,Dillan Chang,Dennis S. Kim,Minh Pham,Arjun Rana,Xuezeng Tian,Yonggang Yao,Stanley Osher,Andreas K. Schmid,Liangbing Hu,Peter Ercius,Jianwei Miao###
(369981, 369981)
 We find that although the 3D atomic packing of the SR<missing VAR>O isgeometrically disordered, some SR<missing VAR>O connect with each other to form crystal-likenetworks and give rise to MRO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 3, 'D', 2],[43.0, 3, 'D', 1],[26.0, 3, 'D', 0],[116.0, 3, 'D', 2],[179.0, 3, 'D', 3],[219.0, 3, 'D', 3]

O
###Determining the three-dimensional atomic structure of a metallic glass|Yao Yang,Jihan Zhou,Fan Zhu,Yakun Yuan,Dillan Chang,Dennis S. Kim,Minh Pham,Arjun Rana,Xuezeng Tian,Yonggang Yao,Stanley Osher,Andreas K. Schmid,Liangbing Hu,Peter Ercius,Jianwei Miao###
(370012, 370012)
 We find that although the 3D atomic packing of the SR<missing VAR>O isgeometrically disordered, some SR<missing VAR>O connect with each other to form crystal-likenetworks and give rise to MRO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 3, 'D', 2],[74.0, 3, 'D', 1],[57.0, 3, 'D', 0],[85.0, 3, 'D', 2],[148.0, 3, 'D', 3],[188.0, 3, 'D', 3]

O
###Determining the three-dimensional atomic structure of a metallic glass|Yao Yang,Jihan Zhou,Fan Zhu,Yakun Yuan,Dillan Chang,Dennis S. Kim,Minh Pham,Arjun Rana,Xuezeng Tian,Yonggang Yao,Stanley Osher,Andreas K. Schmid,Liangbing Hu,Peter Ercius,Jianwei Miao###
(370027, 370027)
 We identify four crystal-like MRO networks -face-centred cubic, hexagonal close-packed, body-centered cubic and simplecubic - coexisting in the sample, which show translational but no orientationalorder.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 3, 'D', 3],[89.0, 3, 'D', 2],[72.0, 3, 'D', 1],[70.0, 3, 'D', 1],[133.0, 3, 'D', 2],[173.0, 3, 'D', 2]

(SiNCs)
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370257, 370261)
 Silicon nanocrystals (SiNCs) have been under active investigation in the lastdecades and have been considered as a promising candidate for manyoptoelectronic applications including highly-efficient solar cells.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370379, 370379)
 In the present work we employ first-principlescalculations in conjunction with the special displacement method to study thetemperature dependence of the band gap renormalization of free-standinghydrogen-terminated, and oxidized SiNCs, as well as matrix-embedded SiNCs inamorphous silica, and we obtain good agreement with experimentalphotoluminescence data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiNCs
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370449, 370451)
 In the present work we employ first-principlescalculations in conjunction with the special displacement method to study thetemperature dependence of the band gap renormalization of free-standinghydrogen-terminated, and oxidized SiNCs, as well as matrix-embedded SiNCs inamorphous silica, and we obtain good agreement with experimentalphotoluminescence data.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiNCs
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370464, 370466)
 In the present work we employ first-principlescalculations in conjunction with the special displacement method to study thetemperature dependence of the band gap renormalization of free-standinghydrogen-terminated, and oxidized SiNCs, as well as matrix-embedded SiNCs inamorphous silica, and we obtain good agreement with experimentalphotoluminescence data.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiNCs
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370557, 370559)
 For the matrix-embedded SiNCs,we show a high correlation between the temperature dependence of the band gapand the Si-Si strained bonds.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370594, 370594)
 For the matrix-embedded SiNCs,we show a high correlation between the temperature dependence of the band gapand the Si-Si strained bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370596, 370596)
 For the matrix-embedded SiNCs,we show a high correlation between the temperature dependence of the band gapand the Si-Si strained bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370652, 370652)
 We alsodemonstrate that, apart from quantum confinement, Si- Si strained bonds are themajor cause of zero-phonon quasidirect transitions in matrix-embedded SiNCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370655, 370655)
 We alsodemonstrate that, apart from quantum confinement, Si- Si strained bonds are themajor cause of zero-phonon quasidirect transitions in matrix-embedded SiNCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiNCs
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370686, 370688)
 We alsodemonstrate that, apart from quantum confinement, Si- Si strained bonds are themajor cause of zero-phonon quasidirect transitions in matrix-embedded SiNCs.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370691, 370691)
 Asa final point, we clarify that, unlike optical absorption in bulk Si,phonon-assisted electronic transitions play a secondary role in SiNCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370718, 370718)
 Asa final point, we clarify that, unlike optical absorption in bulk Si,phonon-assisted electronic transitions play a secondary role in SiNCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiNCs
###Temperature dependence of the optical properties of silicon nanocrystals|Marios Zacharias,Pantelis C. Kelires###
(370740, 370742)
 Asa final point, we clarify that, unlike optical absorption in bulk Si,phonon-assisted electronic transitions play a secondary role in SiNCs.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(370782, 370782)
 Ternary organic solar cells (T<missing VAR>OSC) are currently under intensiveinvestigation, recently reaching a record efficiency of 17.1%.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 17.1, '%', 0],[123.0, 1, ',', 2]

(VOC)
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(370830, 370834)
 The origin ofthe device open-circuit voltage (VOC), already a multifaceted issue in binaryOSC, is even more complex in T<missing VAR>OSCs.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 17.1, '%', 1],[71.0, 1, ',', 1]

OSC
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(370850, 370852)
 The origin ofthe device open-circuit voltage (VOC), already a multifaceted issue in binaryOSC, is even more complex in T<missing VAR>OSCs.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 17.1, '%', 1],[53.0, 1, ',', 1]

OSCs
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(370866, 370868)
 The origin ofthe device open-circuit voltage (VOC), already a multifaceted issue in binaryOSC, is even more complex in T<missing VAR>OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 17.1, '%', 1],[37.0, 1, ',', 1]

VOC
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(370950, 370952)
 By varying the ratio between the two acceptors, wefind the VOC to be gradually tuned between those of the two binary systems,D<missing VAR>A1 and D<missing VAR>A2.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 17.1, '%', 3],[45.0, 1, ',', 1]

(UPS)
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(371017, 371021)
 To investigate the origin of this change, we employ ultra-violetphotoemission spectroscopy (UPS) depth profiling, which is used to estimate thephotovoltaic gap in the ternary systems.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[208.0, 17.1, '%', 4],[112.0, 1, ',', 2]

VOC
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(371081, 371083)
 Our results reveal an excellentagreement between the estimated photovoltaic gap and the VOC for all mixingratios, suggesting that the energetic alignment between the blend componentsvaries depending on the ratio D<missing VAR>A1A2.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 17.1, '%', 5],[176.0, 1, ',', 3]

UPS
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(371195, 371197)
 Finally, we demonstrate the superiorityof UPS over X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) depth profiling in resolvingcompositional profiles for material combinations with very similar chemical,but dissimilar electronic structures, as common in T<missing VAR>OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[386.0, 17.1, '%', 7],[290.0, 1, ',', 5]

S
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(371212, 371212)
 Finally, we demonstrate the superiorityof UPS over X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) depth profiling in resolvingcompositional profiles for material combinations with very similar chemical,but dissimilar electronic structures, as common in T<missing VAR>OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 17.1, '%', 7],[307.0, 1, ',', 5]

OSCs
###Energy Level Alignment in Ternary Organic Solar Cells|Vincent Lami,Yvonne J. Hofstetter,Julian F. Butscher,Yana Vaynzof###
(371260, 371262)
 Finally, we demonstrate the superiorityof UPS over X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) depth profiling in resolvingcompositional profiles for material combinations with very similar chemical,but dissimilar electronic structures, as common in T<missing VAR>OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[451.0, 17.1, '%', 7],[355.0, 1, ',', 5]

V
###Large (bi)polarons for novel energy conversion and superconductivity|David Emin###
(371435, 371435)
 1 cm2/V-sec at 300K, are much smaller than the minimum possible for conventional electroniccharge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2.0, 'Large', 3],[3.0, 1, 'cm', 0],[100.0, 300, 'cm', 2]

K
###Large (bi)polarons for novel energy conversion and superconductivity|David Emin###
(371444, 371444)
 1 cm2/V-sec at 300K, are much smaller than the minimum possible for conventional electroniccharge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2.0, 'Large', 3],[12.0, 1, 'cm', 0],[91.0, 300, 'cm', 2]

V
###Large (bi)polarons for novel energy conversion and superconductivity|David Emin###
(371538, 371538)
 300 cm2/V-sec at room temperature for m<missing VAR> equaling thefree-electron mass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 2.0, 'Large', 5],[106.0, 1, 'cm', 2],[3.0, 300, 'cm', 0]

CsPbI2.85Br0.15
###Texture Formation in Polycrystalline Thin Films of All-Inorganic Lead Halide Perovskite|Julian A. Steele,Eduardo Solano,Handong Jin,Vittal Prakasam,Tom Braeckevelt,Haifeng Yuan,Zhenni Lin,René de Kloe,Qiong Wang,Sven M. J. Rogge,Veronique Van Speybroeck,Dmitry Chernyshov,Johan Hofkens,Maarten B. J. Roeffaers###
(371904, 371909)
 Using synchrotron X<missing VAR>-ray diffraction, we report meso-structureformation within polycrystalline CsPbI2.85Br0.15 powders as they cool from ahigh-temperature cubic perovskite (alpha-phase).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5700000000000001,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 100, '>', 2],[195.0, 10, '>', 2],[202.0, 1, '>', 2],[233.0, 110, '>', 2],[246.0, -10, '>', 2],[253.0, 1, '>', 2]

CsPbI3-x
###Texture Formation in Polycrystalline Thin Films of All-Inorganic Lead Halide Perovskite|Julian A. Steele,Eduardo Solano,Handong Jin,Vittal Prakasam,Tom Braeckevelt,Haifeng Yuan,Zhenni Lin,René de Kloe,Qiong Wang,Sven M. J. Rogge,Veronique Van Speybroeck,Dmitry Chernyshov,Johan Hofkens,Maarten B. J. Roeffaers###
(372041, 372046)
 External anisotropy is then imposed on polycrystallinethin films of orthorhombic (gamma-phase) CsPbI3-xBrx perovskite viasubstrate clamping, revealing two fundamental uniaxial texture formations; (i)I-rich films possess orthorhombic-like texture (<100> out-of-plane; <010> and<001> in-plane), while (ii) Br-rich films form tetragonal-like texture (<110>out-of-plane; <1-10> and <001> in-plane).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[47.0, 100, '>', 0],[58.0, 10, '>', 0],[65.0, 1, '>', 0],[96.0, 110, '>', 0],[109.0, -10, '>', 0],[116.0, 1, '>', 0]

I
###Texture Formation in Polycrystalline Thin Films of All-Inorganic Lead Halide Perovskite|Julian A. Steele,Eduardo Solano,Handong Jin,Vittal Prakasam,Tom Braeckevelt,Haifeng Yuan,Zhenni Lin,René de Kloe,Qiong Wang,Sven M. J. Rogge,Veronique Van Speybroeck,Dmitry Chernyshov,Johan Hofkens,Maarten B. J. Roeffaers###
(372077, 372077)
 External anisotropy is then imposed on polycrystallinethin films of orthorhombic (gamma-phase) CsPbI3-xBrx perovskite viasubstrate clamping, revealing two fundamental uniaxial texture formations; (i)I-rich films possess orthorhombic-like texture (<100> out-of-plane; <010> and<001> in-plane), while (ii) Br-rich films form tetragonal-like texture (<110>out-of-plane; <1-10> and <001> in-plane).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 100, '>', 0],[27.0, 10, '>', 0],[34.0, 1, '>', 0],[65.0, 110, '>', 0],[78.0, -10, '>', 0],[85.0, 1, '>', 0]

Br
###Texture Formation in Polycrystalline Thin Films of All-Inorganic Lead Halide Perovskite|Julian A. Steele,Eduardo Solano,Handong Jin,Vittal Prakasam,Tom Braeckevelt,Haifeng Yuan,Zhenni Lin,René de Kloe,Qiong Wang,Sven M. J. Rogge,Veronique Van Speybroeck,Dmitry Chernyshov,Johan Hofkens,Maarten B. J. Roeffaers###
(372126, 372126)
 External anisotropy is then imposed on polycrystallinethin films of orthorhombic (gamma-phase) CsPbI3-xBrx perovskite viasubstrate clamping, revealing two fundamental uniaxial texture formations; (i)I-rich films possess orthorhombic-like texture (<100> out-of-plane; <010> and<001> in-plane), while (ii) Br-rich films form tetragonal-like texture (<110>out-of-plane; <1-10> and <001> in-plane).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 100, '>', 0],[22.0, 10, '>', 0],[15.0, 1, '>', 0],[16.0, 110, '>', 0],[29.0, -10, '>', 0],[36.0, 1, '>', 0]

In
###Texture Formation in Polycrystalline Thin Films of All-Inorganic Lead Halide Perovskite|Julian A. Steele,Eduardo Solano,Handong Jin,Vittal Prakasam,Tom Braeckevelt,Haifeng Yuan,Zhenni Lin,René de Kloe,Qiong Wang,Sven M. J. Rogge,Veronique Van Speybroeck,Dmitry Chernyshov,Johan Hofkens,Maarten B. J. Roeffaers###
(372171, 372171)
 In contrast to relativelyuninfluential factors like the choice of substrate, film thickness andannealing temperature, Br incorporation modifies the gamma-CsPbI3-xBrxcrystal structure by reducing the orthorhombic lattice distortion (making itmore tetragonal-like) and governs the formation of the different, energeticallyfavored textures within polycrystalline thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 100, '>', 1],[67.0, 10, '>', 1],[60.0, 1, '>', 1],[29.0, 110, '>', 1],[16.0, -10, '>', 1],[9.0, 1, '>', 1]

Br
###Texture Formation in Polycrystalline Thin Films of All-Inorganic Lead Halide Perovskite|Julian A. Steele,Eduardo Solano,Handong Jin,Vittal Prakasam,Tom Braeckevelt,Haifeng Yuan,Zhenni Lin,René de Kloe,Qiong Wang,Sven M. J. Rogge,Veronique Van Speybroeck,Dmitry Chernyshov,Johan Hofkens,Maarten B. J. Roeffaers###
(372207, 372207)
 In contrast to relativelyuninfluential factors like the choice of substrate, film thickness andannealing temperature, Br incorporation modifies the gamma-CsPbI3-xBrxcrystal structure by reducing the orthorhombic lattice distortion (making itmore tetragonal-like) and governs the formation of the different, energeticallyfavored textures within polycrystalline thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 100, '>', 1],[103.0, 10, '>', 1],[96.0, 1, '>', 1],[65.0, 110, '>', 1],[52.0, -10, '>', 1],[45.0, 1, '>', 1]

CsPbI3-x
###Texture Formation in Polycrystalline Thin Films of All-Inorganic Lead Halide Perovskite|Julian A. Steele,Eduardo Solano,Handong Jin,Vittal Prakasam,Tom Braeckevelt,Haifeng Yuan,Zhenni Lin,René de Kloe,Qiong Wang,Sven M. J. Rogge,Veronique Van Speybroeck,Dmitry Chernyshov,Johan Hofkens,Maarten B. J. Roeffaers###
(372217, 372222)
 In contrast to relativelyuninfluential factors like the choice of substrate, film thickness andannealing temperature, Br incorporation modifies the gamma-CsPbI3-xBrxcrystal structure by reducing the orthorhombic lattice distortion (making itmore tetragonal-like) and governs the formation of the different, energeticallyfavored textures within polycrystalline thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[124.0, 100, '>', 1],[113.0, 10, '>', 1],[106.0, 1, '>', 1],[75.0, 110, '>', 1],[62.0, -10, '>', 1],[55.0, 1, '>', 1]

F
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372330, 372330)
Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers A DMRG and TDDFT<missing VAR> study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1, ',', 0],[18.0, 1, ',', 1],[484.0, 1, ',', 12]

(PPP)
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372405, 372409)
 Low-lying excited states for indeno[1,2-b]fluorene homo dimers with orwithout benzene spacers are calculated using the Density Matrix Renormalizationgroup (DMRG) approach within Pariser-Parr-Pople (PPP) model Hamiltonian.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1, ',', 1],[57.0, 1, ',', 0],[405.0, 1, ',', 11]

SF
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372451, 372452)
 DMRGcalculations suggest that all the dimers studied here satisfy the essentialenergy conditions for SF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 1, ',', 2],[103.0, 1, ',', 1],[362.0, 1, ',', 10]

SF
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372455, 372456)
 SF is a multiexciton generation process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1, ',', 3],[107.0, 1, ',', 2],[358.0, 1, ',', 9]

As
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372469, 372469)
 As it isspin allowed, the process is very fast.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 1, ',', 4],[121.0, 1, ',', 3],[345.0, 1, ',', 8]

SF
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372507, 372508)
 By generating multiple exciton at atime SF underestimate SQ<missing VAR> limit to enhance photo-conversion efficiency of singlejunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 1, ',', 5],[159.0, 1, ',', 4],[306.0, 1, ',', 7]

S
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372512, 372512)
 By generating multiple exciton at atime SF underestimate SQ<missing VAR> limit to enhance photo-conversion efficiency of singlejunction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 1, ',', 5],[164.0, 1, ',', 4],[302.0, 1, ',', 7]

F
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372621, 372621)
Here the process is intramolecular (i<missing VAR>SF), which has many advantages over theintermolecular (x<missing VAR>SF) process, as in intermolecular process the SF process ishighly dependent on the crystal packing, defects, dislocations etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 1, ',', 8],[273.0, 1, ',', 7],[193.0, 1, ',', 4]

F
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372643, 372643)
Here the process is intramolecular (i<missing VAR>SF), which has many advantages over theintermolecular (x<missing VAR>SF) process, as in intermolecular process the SF process ishighly dependent on the crystal packing, defects, dislocations etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 1, ',', 8],[295.0, 1, ',', 7],[171.0, 1, ',', 4]

SF
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372659, 372660)
Here the process is intramolecular (i<missing VAR>SF), which has many advantages over theintermolecular (x<missing VAR>SF) process, as in intermolecular process the SF process ishighly dependent on the crystal packing, defects, dislocations etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 1, ',', 8],[311.0, 1, ',', 7],[154.0, 1, ',', 4]

SF
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372704, 372705)
 Theentangled 1(TT) state for x<missing VAR>SF is localized on both of the chromophores, thusthe appropriate crystal packing is essential for x<missing VAR>SF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 1, ',', 9],[356.0, 1, ',', 8],[109.0, 1, ',', 3]

SF
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372740, 372741)
 Theentangled 1(TT) state for x<missing VAR>SF is localized on both of the chromophores, thusthe appropriate crystal packing is essential for x<missing VAR>SF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 1, ',', 9],[392.0, 1, ',', 8],[73.0, 1, ',', 3]

SF
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372747, 372748)
 However i<missing VAR>SF does notdepend on the crystal packing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[439.0, 1, ',', 10],[399.0, 1, ',', 9],[66.0, 1, ',', 2]

F
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372780, 372780)
 Our DMRG calculation and TDDFT<missing VAR> calculation arein well agreement with experimental results found in the literature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[472.0, 1, ',', 11],[432.0, 1, ',', 10],[34.0, 1, ',', 1]

SF
###Designing intramolecular singlet-fission materials using indeno[1,2-b]fluorene dimers: A DMRG and TDDFT study|Sumit Naskar,Mousumi Das###
(372835, 372836)
 Thusindeno[1,2-b]fluorene homo dimers can be applicable in i<missing VAR>SF application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[527.0, 1, ',', 12],[487.0, 1, ',', 11],[21.0, 1, ',', 0]

B
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373022, 373022)
 Here, we introduce a method to implement strong interference inultrathin film top absorbers in a tandem cell configuration through use ofdistributed Bragg reflectors (D<missing VAR>BRs).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373049, 373049)
 We showcase this by designing andfabricating a photoelectrochemical-photovoltaic (PE<missing VAR>C-PV) stacked tandem cell ina V-shaped configuration where short wavelength photons are reflected back tothe photoanode material (hematite, Fe2O3), whereas long wavelength photons aretransmitted to the bottom silicon PV cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373051, 373051)
 We showcase this by designing andfabricating a photoelectrochemical-photovoltaic (PE<missing VAR>C-PV) stacked tandem cell ina V-shaped configuration where short wavelength photons are reflected back tothe photoanode material (hematite, Fe2O3), whereas long wavelength photons aretransmitted to the bottom silicon PV cell.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373054, 373054)
 We showcase this by designing andfabricating a photoelectrochemical-photovoltaic (PE<missing VAR>C-PV) stacked tandem cell ina V-shaped configuration where short wavelength photons are reflected back tothe photoanode material (hematite, Fe2O3), whereas long wavelength photons aretransmitted to the bottom silicon PV cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373068, 373068)
 We showcase this by designing andfabricating a photoelectrochemical-photovoltaic (PE<missing VAR>C-PV) stacked tandem cell ina V-shaped configuration where short wavelength photons are reflected back tothe photoanode material (hematite, Fe2O3), whereas long wavelength photons aretransmitted to the bottom silicon PV cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373103, 373104)
 We showcase this by designing andfabricating a photoelectrochemical-photovoltaic (PE<missing VAR>C-PV) stacked tandem cell ina V-shaped configuration where short wavelength photons are reflected back tothe photoanode material (hematite, Fe2O3), whereas long wavelength photons aretransmitted to the bottom silicon PV cell.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373129, 373130)
 We showcase this by designing andfabricating a photoelectrochemical-photovoltaic (PE<missing VAR>C-PV) stacked tandem cell ina V-shaped configuration where short wavelength photons are reflected back tothe photoanode material (hematite, Fe2O3), whereas long wavelength photons aretransmitted to the bottom silicon PV cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373168, 373168)
 We employ optical simulations todetermine the optimal thicknesses of the DBR layers and the V-shape angle tomaximize light absorption in the ultrathin (10 nm thick) hematite film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373286, 373287)
 Using a DBR to couple a bottom silicon PV cellwith an ultrathin hematite top PE<missing VAR>C cell, we demonstrate unassisted solar watersplitting and show that D<missing VAR>BRs can be designed to enhance strong interference inultrathin films while enabling stacked tandem cell configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373302, 373302)
 Using a DBR to couple a bottom silicon PV cellwith an ultrathin hematite top PE<missing VAR>C cell, we demonstrate unassisted solar watersplitting and show that D<missing VAR>BRs can be designed to enhance strong interference inultrathin films while enabling stacked tandem cell configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373304, 373304)
 Using a DBR to couple a bottom silicon PV cellwith an ultrathin hematite top PE<missing VAR>C cell, we demonstrate unassisted solar watersplitting and show that D<missing VAR>BRs can be designed to enhance strong interference inultrathin films while enabling stacked tandem cell configuration.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Implementing strong interference in ultrathin film top absorbers for tandem solar cells|Yifat Piekner,Hen Dotan,Anton Tsyganok,Kirtiman Deo Malviya,Daniel A. Grave,Ofer Kfir,Avner Rothschild###
(373329, 373329)
 Using a DBR to couple a bottom silicon PV cellwith an ultrathin hematite top PE<missing VAR>C cell, we demonstrate unassisted solar watersplitting and show that D<missing VAR>BRs can be designed to enhance strong interference inultrathin films while enabling stacked tandem cell configuration.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pb)
###Metal halide perovskite toxicity effects on plants are caused by iodide ions|Eline M. Hutter,Reiny Sangster,Christa Testerink,Bruno Ehrler,Charlotte M. M. Gommers###
(373513, 373515)
 Perovskites are generallyassumed to be toxic because of the lead (Pb), but experimental evidence tosupport this prediction is scarce.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 5, 'microM', 2],[161.0, 500, 'microM', 3]

PbI3
###Metal halide perovskite toxicity effects on plants are caused by iodide ions|Eline M. Hutter,Reiny Sangster,Christa Testerink,Bruno Ehrler,Charlotte M. M. Gommers###
(373567, 373569)
 We used Arabidopsis thaliana to test thetoxicity of the lead-based perovskite M<missing VAR>APbI3 (M<missing VAR>A  CH3NH3) and several of itsprecursors in plants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 5, 'microM', 1],[107.0, 500, 'microM', 2]

H3
###Metal halide perovskite toxicity effects on plants are caused by iodide ions|Eline M. Hutter,Reiny Sangster,Christa Testerink,Bruno Ehrler,Charlotte M. M. Gommers###
(373580, 373581)
 We used Arabidopsis thaliana to test thetoxicity of the lead-based perovskite M<missing VAR>APbI3 (M<missing VAR>A  CH3NH3) and several of itsprecursors in plants.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 5, 'microM', 1],[95.0, 500, 'microM', 2]

PbI3
###Metal halide perovskite toxicity effects on plants are caused by iodide ions|Eline M. Hutter,Reiny Sangster,Christa Testerink,Bruno Ehrler,Charlotte M. M. Gommers###
(373610, 373612)
 Our results show that M<missing VAR>APbI3 severely hampers plantgrowth at concentrations above 5 microM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5, 'microM', 0],[64.0, 500, 'microM', 1]

I
###Metal halide perovskite toxicity effects on plants are caused by iodide ions|Eline M. Hutter,Reiny Sangster,Christa Testerink,Bruno Ehrler,Charlotte M. M. Gommers###
(373647, 373647)
 Surprisingly, we find that theprecursors M<missing VAR>AI is equally toxic, while lead-based precursors without iodide areonly toxic above 500 microM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 5, 'microM', 1],[29.0, 500, 'microM', 0]

In
###A Universal Urbach Rule for Disordered Organic Semiconductors|Christina Kaiser,Oskar J. Sandberg,Nasim Zarrabi,Wei Li,Paul Meredith,Ardalan Armin###
(373858, 373858)
 In crystalline semiconductors, absorption onset sharpness is characterized bytemperature dependent Urbach energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hybrid design of spectral splitters and concentrators of light for solar cells using iterative search and neural networks|Alim Yolalmaz,Emre Yüce###
(374395, 374395)
 In this study, we present a hybrid designscheme, which relies on a deep learning model and the local search optimizationalgorithm, to optimize a diffractive optical element that performs spectralsplitting and spatial concentration of broadband light for solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 57, '%', 3]

In
###Hot-carrier optoelectronic devices based on semiconductor nanowires|Jonatan Fast,Urs Aeberhard,Stephen P. Bremner,Heiner Linke###
(374785, 374785)
 In optoelectronic devices such as solar cells and photodetectors, a portionof electron-hole pairs are generated as so called hot carriers with an excessenergy that is typically lost as heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hot-carrier optoelectronic devices based on semiconductor nanowires|Jonatan Fast,Urs Aeberhard,Stephen P. Bremner,Heiner Linke###
(375053, 375053)
 In this review weassess the current state of theory and experiments relating to hot-carrierdynamics in nanowires, with a focus on hot-carrier photovoltaics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba2Sb
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375374, 375376)
Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbX<missing VAR>O6 (X<missing VAR>Nb, Ta) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[477.0, 26.8, '%', 9]

O6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375378, 375379)
Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbX<missing VAR>O6 (X<missing VAR>Nb, Ta) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 26.8, '%', 9]

Nb
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375383, 375383)
Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbX<missing VAR>O6 (X<missing VAR>Nb, Ta) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[470.0, 26.8, '%', 9]

Ta
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375386, 375386)
Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbX<missing VAR>O6 (X<missing VAR>Nb, Ta) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[467.0, 26.8, '%', 9]

S
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375426, 375426)
 We report the structural, mechanical, electronic, optical, thermoelectricproperties and spectroscopic limited maximum efficiency (SLME) of oxide doubleperovskite structure Ba2SbNbO6 and Ba2SbTaO6 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[427.0, 26.8, '%', 8]

Ba2SbNbO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375443, 375448)
 We report the structural, mechanical, electronic, optical, thermoelectricproperties and spectroscopic limited maximum efficiency (SLME) of oxide doubleperovskite structure Ba2SbNbO6 and Ba2SbTaO6 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 26.8, '%', 8]

Ba2SbTaO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375452, 375457)
 We report the structural, mechanical, electronic, optical, thermoelectricproperties and spectroscopic limited maximum efficiency (SLME) of oxide doubleperovskite structure Ba2SbNbO6 and Ba2SbTaO6 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 26.8, '%', 8]

(B)
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375539, 375541)
 The calculated data of bulk modulus (B), shearmodulus (G), and Youngs<missing VAR> modulus (E) for Ba2SbTaO6 are found to be greater thanthose of Ba2SbNbO6.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 26.8, '%', 5]

Ba2SbTaO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375567, 375572)
 The calculated data of bulk modulus (B), shearmodulus (G), and Youngs<missing VAR> modulus (E) for Ba2SbTaO6 are found to be greater thanthose of Ba2SbNbO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 26.8, '%', 5]

Ba2SbNbO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375591, 375596)
 The calculated data of bulk modulus (B), shearmodulus (G), and Youngs<missing VAR> modulus (E) for Ba2SbTaO6 are found to be greater thanthose of Ba2SbNbO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 26.8, '%', 5]

B
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375614, 375614)
 The ratio of Bulk to shear ratio (B/G) shows that Ba2SbNbO6and Ba2SbTaO6 are ductile.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 26.8, '%', 4]

Ba2SbNbO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375623, 375628)
 The ratio of Bulk to shear ratio (B/G) shows that Ba2SbNbO6and Ba2SbTaO6 are ductile.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 26.8, '%', 4]

Ba2SbTaO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375633, 375638)
 The ratio of Bulk to shear ratio (B/G) shows that Ba2SbNbO6and Ba2SbTaO6 are ductile.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 26.8, '%', 4]

Ba2Sb
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375807, 375809)
 The high absorptionspectra and good figure of merit (ZT) reveal that both the studied compounds,Ba2SbX<missing VAR>O6 (X<missing VAR>  Nb, Ta) are promising materials for photovoltaic andthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 26.8, '%', 1]

O6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375811, 375812)
 The high absorptionspectra and good figure of merit (ZT) reveal that both the studied compounds,Ba2SbX<missing VAR>O6 (X<missing VAR>  Nb, Ta) are promising materials for photovoltaic andthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 26.8, '%', 1]

Nb
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375818, 375818)
 The high absorptionspectra and good figure of merit (ZT) reveal that both the studied compounds,Ba2SbX<missing VAR>O6 (X<missing VAR>  Nb, Ta) are promising materials for photovoltaic andthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 26.8, '%', 1]

Ta
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375821, 375821)
 The high absorptionspectra and good figure of merit (ZT) reveal that both the studied compounds,Ba2SbX<missing VAR>O6 (X<missing VAR>  Nb, Ta) are promising materials for photovoltaic andthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 26.8, '%', 1]

S
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375846, 375846)
 The calculated SLME of 26.8% reveals that Ba2SNbO6is an appealing candidate for single-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 26.8, '%', 0]

Ba2SNbO6
###Ab-initio investigations for Structural, Mechanical, Optoelectronic, and Thermoelectric properties of Ba2SbXO6 (X=Nb, Ta) compounds|Hansraj,K. C. Bhamu,Sung Gu Kang,A. K. Kushwaha,D. P. Rai,Subrahmanyam Sappati,J. Sahariya,Amit Soni###
(375860, 375865)
 The calculated SLME of 26.8% reveals that Ba2SNbO6is an appealing candidate for single-junction solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 26.8, '%', 0]

P
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(375905, 375905)
Nongeminate and Geminate Recombination in PT<missing VAR>B7PC71BM<missing VAR> solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 4, ',', 1],[91.0, 1, ',', 1],[96.0, 4, ',', 1],[103.0, -2, ',', 1],[130.0, 3, ',', 1],[148.0, 6, ',', 1],[227.0, 1, ',', 2]

B7PC71B
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(375907, 375912)
Nongeminate and Geminate Recombination in PT<missing VAR>B7PC71BM<missing VAR> solar cells.
Featurization terminated normally.
0,0,0,0,0.1,0.8875,0,0,0,0,0,0,0,0,0.0125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 4, ',', 1],[84.0, 1, ',', 1],[89.0, 4, ',', 1],[96.0, -2, ',', 1],[123.0, 3, ',', 1],[141.0, 6, ',', 1],[220.0, 1, ',', 2]

V
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(375933, 375933)
 A combination of transient photovoltage (T<missing VAR>PV), voltage dependent chargeextraction (CE) and time delayed collection field (TDCF) measurements isapplied topoly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b<missing VAR>4,5-b]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]](PT<missing VAR>B7)[6,6]-phenyl-C71-butyric acid (PC71BM) bulk heterojunction solarcells to analyze the limitations of photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 4, ',', 0],[63.0, 1, ',', 0],[68.0, 4, ',', 0],[75.0, -2, ',', 0],[102.0, 3, ',', 0],[120.0, 6, ',', 0],[199.0, 1, ',', 1]

C
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(375947, 375947)
 A combination of transient photovoltage (T<missing VAR>PV), voltage dependent chargeextraction (CE) and time delayed collection field (TDCF) measurements isapplied topoly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b<missing VAR>4,5-b]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]](PT<missing VAR>B7)[6,6]-phenyl-C71-butyric acid (PC71BM) bulk heterojunction solarcells to analyze the limitations of photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 4, ',', 0],[49.0, 1, ',', 0],[54.0, 4, ',', 0],[61.0, -2, ',', 0],[88.0, 3, ',', 0],[106.0, 6, ',', 0],[185.0, 1, ',', 1]

F
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(375965, 375965)
 A combination of transient photovoltage (T<missing VAR>PV), voltage dependent chargeextraction (CE) and time delayed collection field (TDCF) measurements isapplied topoly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b<missing VAR>4,5-b]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]](PT<missing VAR>B7)[6,6]-phenyl-C71-butyric acid (PC71BM) bulk heterojunction solarcells to analyze the limitations of photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 4, ',', 0],[31.0, 1, ',', 0],[36.0, 4, ',', 0],[43.0, -2, ',', 0],[70.0, 3, ',', 0],[88.0, 6, ',', 0],[167.0, 1, ',', 1]

P
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376047, 376047)
 A combination of transient photovoltage (T<missing VAR>PV), voltage dependent chargeextraction (CE) and time delayed collection field (TDCF) measurements isapplied topoly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b<missing VAR>4,5-b]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]](PT<missing VAR>B7)[6,6]-phenyl-C71-butyric acid (PC71BM) bulk heterojunction solarcells to analyze the limitations of photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 4, ',', 0],[51.0, 1, ',', 0],[46.0, 4, ',', 0],[39.0, -2, ',', 0],[12.0, 3, ',', 0],[6.0, 6, ',', 0],[85.0, 1, ',', 1]

B7
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376049, 376050)
 A combination of transient photovoltage (T<missing VAR>PV), voltage dependent chargeextraction (CE) and time delayed collection field (TDCF) measurements isapplied topoly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b<missing VAR>4,5-b]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]](PT<missing VAR>B7)[6,6]-phenyl-C71-butyric acid (PC71BM) bulk heterojunction solarcells to analyze the limitations of photovoltaic performance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 4, ',', 0],[53.0, 1, ',', 0],[48.0, 4, ',', 0],[41.0, -2, ',', 0],[14.0, 3, ',', 0],[3.0, 6, ',', 0],[82.0, 1, ',', 1]

C71
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376060, 376061)
 A combination of transient photovoltage (T<missing VAR>PV), voltage dependent chargeextraction (CE) and time delayed collection field (TDCF) measurements isapplied topoly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b<missing VAR>4,5-b]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]](PT<missing VAR>B7)[6,6]-phenyl-C71-butyric acid (PC71BM) bulk heterojunction solarcells to analyze the limitations of photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 4, ',', 0],[64.0, 1, ',', 0],[59.0, 4, ',', 0],[52.0, -2, ',', 0],[25.0, 3, ',', 0],[7.0, 6, ',', 0],[71.0, 1, ',', 1]

PC71B
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376068, 376071)
 A combination of transient photovoltage (T<missing VAR>PV), voltage dependent chargeextraction (CE) and time delayed collection field (TDCF) measurements isapplied topoly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b<missing VAR>4,5-b]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]](PT<missing VAR>B7)[6,6]-phenyl-C71-butyric acid (PC71BM) bulk heterojunction solarcells to analyze the limitations of photovoltaic performance.
Featurization terminated normally.
0,0,0,0,0.0136986301369863,0.9726027397260274,0,0,0,0,0,0,0,0,0.0136986301369863,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 4, ',', 0],[72.0, 1, ',', 0],[67.0, 4, ',', 0],[60.0, -2, ',', 0],[33.0, 3, ',', 0],[15.0, 6, ',', 0],[61.0, 1, ',', 1]

(CB)
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376112, 376115)
 Devices areprocessed from pure chlorobenzene (CB) solution and a subset was optimized with1,8-diiodooctane (D<missing VAR>IO) as co-solvent.
Featurization successful!
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 4, ',', 1],[116.0, 1, ',', 1],[111.0, 4, ',', 1],[104.0, -2, ',', 1],[77.0, 3, ',', 1],[59.0, 6, ',', 1],[17.0, 1, ',', 0]

O
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376141, 376141)
 Devices areprocessed from pure chlorobenzene (CB) solution and a subset was optimized with1,8-diiodooctane (D<missing VAR>IO) as co-solvent.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 4, ',', 1],[145.0, 1, ',', 1],[140.0, 4, ',', 1],[133.0, -2, ',', 1],[106.0, 3, ',', 1],[88.0, 6, ',', 1],[9.0, 1, ',', 0]

CB
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376196, 376197)
 Whilein the devices processed from CB solution, severe geminate and nongeminaterecombination is observed, the use of D<missing VAR>IO facilitates efficient polaron pairdissociation and minimizes geminate recombination.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 4, ',', 3],[200.0, 1, ',', 3],[195.0, 4, ',', 3],[188.0, -2, ',', 3],[161.0, 3, ',', 3],[143.0, 6, ',', 3],[64.0, 1, ',', 2]

IO
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376225, 376226)
 Whilein the devices processed from CB solution, severe geminate and nongeminaterecombination is observed, the use of D<missing VAR>IO facilitates efficient polaron pairdissociation and minimizes geminate recombination.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 4, ',', 3],[229.0, 1, ',', 3],[224.0, 4, ',', 3],[217.0, -2, ',', 3],[190.0, 3, ',', 3],[172.0, 6, ',', 3],[93.0, 1, ',', 2]

(V)
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376290, 376292)
 Thus, from the determinedcharge carrier decay rate under open circuit conditions and the voltagedependent charge carrier densities n<missing VAR>(V), the nongeminate loss currentj<missing VAR>loss of the samples with D<missing VAR>IO alone enables us to reconstruct thecurrent/voltage (j<missing VAR>/V) characteristics across the whole operational voltagerange.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 4, ',', 4],[294.0, 1, ',', 4],[289.0, 4, ',', 4],[282.0, -2, ',', 4],[255.0, 3, ',', 4],[237.0, 6, ',', 4],[158.0, 1, ',', 3]

IO
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376316, 376317)
 Thus, from the determinedcharge carrier decay rate under open circuit conditions and the voltagedependent charge carrier densities n<missing VAR>(V), the nongeminate loss currentj<missing VAR>loss of the samples with D<missing VAR>IO alone enables us to reconstruct thecurrent/voltage (j<missing VAR>/V) characteristics across the whole operational voltagerange.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 4, ',', 4],[320.0, 1, ',', 4],[315.0, 4, ',', 4],[308.0, -2, ',', 4],[281.0, 3, ',', 4],[263.0, 6, ',', 4],[184.0, 1, ',', 3]

V
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376339, 376339)
 Thus, from the determinedcharge carrier decay rate under open circuit conditions and the voltagedependent charge carrier densities n<missing VAR>(V), the nongeminate loss currentj<missing VAR>loss of the samples with D<missing VAR>IO alone enables us to reconstruct thecurrent/voltage (j<missing VAR>/V) characteristics across the whole operational voltagerange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 4, ',', 4],[343.0, 1, ',', 4],[338.0, 4, ',', 4],[331.0, -2, ',', 4],[304.0, 3, ',', 4],[286.0, 6, ',', 4],[207.0, 1, ',', 3]

V
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376378, 376378)
 Geminate and nongeminate losses are considered to describe the j<missing VAR>/Vresponse of cells prepared without additive, but lead to a clearlyoverestimated device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 4, ',', 5],[382.0, 1, ',', 5],[377.0, 4, ',', 5],[370.0, -2, ',', 5],[343.0, 3, ',', 5],[325.0, 6, ',', 5],[246.0, 1, ',', 4]

V
###Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells|A. Foertig,J. Kniepert,M. Gluecker,T. Brenner,V. Dyakonov,D. Neher,C. Deibel###
(376431, 376431)
 We attribute the deviation between measuredand reconstructed j<missing VAR>/V characteristics to trapped charges in isolated domainsof pure fullerene phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[450.0, 4, ',', 6],[435.0, 1, ',', 6],[430.0, 4, ',', 6],[423.0, -2, ',', 6],[396.0, 3, ',', 6],[378.0, 6, ',', 6],[299.0, 1, ',', 5]

H
###Multi-Pulse Terahertz Spectroscopy Unveils Hot Polaron Photoconductivity Dynamics in Metal-Halide Perovskites|Xijia Zheng,Thomas R. Hopper,Andrei Gorodetsky,Marios Maimaris,Weidong Xu,Bradley A. A. Martin,Jarvist M. Frost,Artem A. Bakulin###
(376512, 376512)
 The behavior of hot carriers in metal-halide perovskites (M<missing VAR>HPs) present avaluable foundation for understanding the details of carrier-phonon coupling inthe materials as well as the prospective development of highly efficient hotcarrier and carrier multiplication solar cells.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PPP
###Multi-Pulse Terahertz Spectroscopy Unveils Hot Polaron Photoconductivity Dynamics in Metal-Halide Perovskites|Xijia Zheng,Thomas R. Hopper,Andrei Gorodetsky,Marios Maimaris,Weidong Xu,Bradley A. A. Martin,Jarvist M. Frost,Artem A. Bakulin###
(376678, 376680)
To address this, we introduce a novel ultrafast visible pump - infrared push -terahertz probe spectroscopy (PPP-T<missing VAR>Hz) to monitor the real-time conductivitydynamics of cooling carriers in methylammonium lead iodide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PPP
###Multi-Pulse Terahertz Spectroscopy Unveils Hot Polaron Photoconductivity Dynamics in Metal-Halide Perovskites|Xijia Zheng,Thomas R. Hopper,Andrei Gorodetsky,Marios Maimaris,Weidong Xu,Bradley A. A. Martin,Jarvist M. Frost,Artem A. Bakulin###
(376802, 376804)
 Surprisingly, the conductivity recovery dynamics areincommensurate with the intraband relaxation measured by an analogousexperiment with an infrared probe (PPP- IR), and exhibit a negligibledependence on the density of hot carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Multi-Pulse Terahertz Spectroscopy Unveils Hot Polaron Photoconductivity Dynamics in Metal-Halide Perovskites|Xijia Zheng,Thomas R. Hopper,Andrei Gorodetsky,Marios Maimaris,Weidong Xu,Bradley A. A. Martin,Jarvist M. Frost,Artem A. Bakulin###
(376807, 376807)
 Surprisingly, the conductivity recovery dynamics areincommensurate with the intraband relaxation measured by an analogousexperiment with an infrared probe (PPP- IR), and exhibit a negligibledependence on the density of hot carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Multi-Pulse Terahertz Spectroscopy Unveils Hot Polaron Photoconductivity Dynamics in Metal-Halide Perovskites|Xijia Zheng,Thomas R. Hopper,Andrei Gorodetsky,Marios Maimaris,Weidong Xu,Bradley A. A. Martin,Jarvist M. Frost,Artem A. Bakulin###
(376911, 376911)
 This collective polaron-latticephenomenon may contribute to the unusual photophysics observed in M<missing VAR>HPs andshould be accounted for in devices that utilize hot carriers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Recent Progress on Synthesis, Characterization, and Applications of Metal Halide Perovskites@Metal Oxide|Yanyan Duan,De-Yi Wang,Rubén D. Costa###
(376982, 376982)
 Metal halide perovskites (M<missing VAR>HPs) have become a promising candidate in a myriadof applications, such as light-emitting diodes, solar cells, lasing,photodetectors, photocatalysis, transistors, etc.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Recent Progress on Synthesis, Characterization, and Applications of Metal Halide Perovskites@Metal Oxide|Yanyan Duan,De-Yi Wang,Rubén D. Costa###
(377140, 377140)
 However, the main bottleneck is the poor stability of the M<missing VAR>HPs underambient conditions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Recent Progress on Synthesis, Characterization, and Applications of Metal Halide Perovskites@Metal Oxide|Yanyan Duan,De-Yi Wang,Rubén D. Costa###
(377179, 377179)
 In this context, metal oxide(M<missing VAR>Ox) coatings have recently emerged as an efficient strategy towardsovercoming the stabilities issues as well as retain the excellent properties ofthe M<missing VAR>HPs, and therefore facilitate the development of the related devicesstabilities and performances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Recent Progress on Synthesis, Characterization, and Applications of Metal Halide Perovskites@Metal Oxide|Yanyan Duan,De-Yi Wang,Rubén D. Costa###
(377243, 377243)
 In this context, metal oxide(M<missing VAR>Ox) coatings have recently emerged as an efficient strategy towardsovercoming the stabilities issues as well as retain the excellent properties ofthe M<missing VAR>HPs, and therefore facilitate the development of the related devicesstabilities and performances.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Recent Progress on Synthesis, Characterization, and Applications of Metal Halide Perovskites@Metal Oxide|Yanyan Duan,De-Yi Wang,Rubén D. Costa###
(377315, 377315)
This review provides a summary of the recentprogress on synthetic methods, enhanced features, the techniques to assess theM<missing VAR>HPs-M<missing VAR>Oxcomposites, and applications of the M<missing VAR>HPsM<missing VAR>Ox.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Recent Progress on Synthesis, Characterization, and Applications of Metal Halide Perovskites@Metal Oxide|Yanyan Duan,De-Yi Wang,Rubén D. Costa###
(377331, 377331)
This review provides a summary of the recentprogress on synthetic methods, enhanced features, the techniques to assess theM<missing VAR>HPs-M<missing VAR>Oxcomposites, and applications of the M<missing VAR>HPsM<missing VAR>Ox.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Recent Progress on Synthesis, Characterization, and Applications of Metal Halide Perovskites@Metal Oxide|Yanyan Duan,De-Yi Wang,Rubén D. Costa###
(377408, 377408)
 This is rounded by acritical outlook about the current M<missing VAR>HPs stability issues and the furtherdirection to ensure a bright future of M<missing VAR>HPsM<missing VAR>Ox<missing PERIOD>
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Recent Progress on Synthesis, Characterization, and Applications of Metal Halide Perovskites@Metal Oxide|Yanyan Duan,De-Yi Wang,Rubén D. Costa###
(377437, 377437)
 This is rounded by acritical outlook about the current M<missing VAR>HPs stability issues and the furtherdirection to ensure a bright future of M<missing VAR>HPsM<missing VAR>Ox<missing PERIOD>
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuIn1-xGa
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377468, 377473)
Carrier transport and performance limit of semi-transparent photovoltaics CuIn1-xGax<missing VAR>Se2 as a case study.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[354.0, 500, 'nm', 7],[527.0, 10, '%', 10],[537.0, 25, '%', 10]

Se2
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377475, 377476)
Carrier transport and performance limit of semi-transparent photovoltaics CuIn1-xGax<missing VAR>Se2 as a case study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 500, 'nm', 7],[524.0, 10, '%', 10],[534.0, 25, '%', 10]

CuIn1-xGa
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377530, 377535)
 CuIn1-xGax<missing VAR>Se2 (CIG<missing VAR>S) has been established as a maturetechnology for thin-film photovoltaics, however, its potential forSemi-Transparent Photovoltaics (ST<missing VAR>PV) is yet to be explored.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[292.0, 500, 'nm', 5],[465.0, 10, '%', 8],[475.0, 25, '%', 8]

Se2
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377537, 377538)
 CuIn1-xGax<missing VAR>Se2 (CIG<missing VAR>S) has been established as a maturetechnology for thin-film photovoltaics, however, its potential forSemi-Transparent Photovoltaics (ST<missing VAR>PV) is yet to be explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 500, 'nm', 5],[462.0, 10, '%', 8],[472.0, 25, '%', 8]

CI
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377541, 377542)
 CuIn1-xGax<missing VAR>Se2 (CIG<missing VAR>S) has been established as a maturetechnology for thin-film photovoltaics, however, its potential forSemi-Transparent Photovoltaics (ST<missing VAR>PV) is yet to be explored.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 500, 'nm', 5],[458.0, 10, '%', 8],[468.0, 25, '%', 8]

S
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377544, 377544)
 CuIn1-xGax<missing VAR>Se2 (CIG<missing VAR>S) has been established as a maturetechnology for thin-film photovoltaics, however, its potential forSemi-Transparent Photovoltaics (ST<missing VAR>PV) is yet to be explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 500, 'nm', 5],[456.0, 10, '%', 8],[466.0, 25, '%', 8]

S
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377588, 377588)
 CuIn1-xGax<missing VAR>Se2 (CIG<missing VAR>S) has been established as a maturetechnology for thin-film photovoltaics, however, its potential forSemi-Transparent Photovoltaics (ST<missing VAR>PV) is yet to be explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 500, 'nm', 5],[412.0, 10, '%', 8],[422.0, 25, '%', 8]

V
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377591, 377591)
 CuIn1-xGax<missing VAR>Se2 (CIG<missing VAR>S) has been established as a maturetechnology for thin-film photovoltaics, however, its potential forSemi-Transparent Photovoltaics (ST<missing VAR>PV) is yet to be explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 500, 'nm', 5],[409.0, 10, '%', 8],[419.0, 25, '%', 8]

In
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377605, 377605)
 In this paper, wepresent its carrier transport physics explaining the trend seen in recentlypublished experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 500, 'nm', 4],[395.0, 10, '%', 7],[405.0, 25, '%', 7]

S
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377643, 377643)
 ST<missing VAR>PV requires deposition of films of only a few hundrednanometers to make them transparent and manifests several unique propertiescompared to a conventional thin-film solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 500, 'nm', 3],[357.0, 10, '%', 6],[367.0, 25, '%', 6]

PV
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377645, 377646)
 ST<missing VAR>PV requires deposition of films of only a few hundrednanometers to make them transparent and manifests several unique propertiescompared to a conventional thin-film solar cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 500, 'nm', 3],[354.0, 10, '%', 6],[364.0, 25, '%', 6]

V
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377945, 377945)
 For various scenarios of bulk and interface recombinations,shunt and series resistances, AVT<missing VAR> and composition of CuIn1-xGax<missing VAR>Se2,we project the efficiency limit which - for most practical cases - is found tobe leq10% for AVT<missing VAR> geq25%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 500, 'nm', 3],[55.0, 10, '%', 0],[65.0, 25, '%', 0]

CuIn1-xGa
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377954, 377959)
 For various scenarios of bulk and interface recombinations,shunt and series resistances, AVT<missing VAR> and composition of CuIn1-xGax<missing VAR>Se2,we project the efficiency limit which - for most practical cases - is found tobe leq10% for AVT<missing VAR> geq25%.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[127.0, 500, 'nm', 3],[41.0, 10, '%', 0],[51.0, 25, '%', 0]

Se2
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(377961, 377962)
 For various scenarios of bulk and interface recombinations,shunt and series resistances, AVT<missing VAR> and composition of CuIn1-xGax<missing VAR>Se2,we project the efficiency limit which - for most practical cases - is found tobe leq10% for AVT<missing VAR> geq25%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 500, 'nm', 3],[38.0, 10, '%', 0],[48.0, 25, '%', 0]

V
###Carrier transport and performance limit of semi-transparent photovoltaics: CuIn$_{1-x}$Ga$_x$Se$_2$ as a case study|Eymana Maria,Ajanta Saha,M. Ryyan Khan,Md. Abdullah Zubair,Md. Zunaid Baten,Redwan N. Sajjad###
(378006, 378006)
 For various scenarios of bulk and interface recombinations,shunt and series resistances, AVT<missing VAR> and composition of CuIn1-xGax<missing VAR>Se2,we project the efficiency limit which - for most practical cases - is found tobe leq10% for AVT<missing VAR> geq25%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 500, 'nm', 3],[6.0, 10, '%', 0],[4.0, 25, '%', 0]

SC
###Seeing Structural Evolution of Organic Molecular Nano-crystallites Using 4D Scanning Confocal Electron Diffraction|Mingjian Wu,Christina Harreiss,Colin Ophus,Erdmann Spiecker###
(378121, 378122)
 Here, we introduce 4D-scanning confocalelectron diffraction (4D<missing VAR>-SCED), which enables direct in situ observation ofbulk heterojunction (BHJ) thin films.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 4, 'D', 2],[15.0, 4, 'D', 0],[35.0, 4, 'D', 1]

BH
###Seeing Structural Evolution of Organic Molecular Nano-crystallites Using 4D Scanning Confocal Electron Diffraction|Mingjian Wu,Christina Harreiss,Colin Ophus,Erdmann Spiecker###
(378148, 378149)
 Here, we introduce 4D-scanning confocalelectron diffraction (4D<missing VAR>-SCED), which enables direct in situ observation ofbulk heterojunction (BHJ) thin films.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 4, 'D', 2],[42.0, 4, 'D', 0],[8.0, 4, 'D', 1]

SC
###Seeing Structural Evolution of Organic Molecular Nano-crystallites Using 4D Scanning Confocal Electron Diffraction|Mingjian Wu,Christina Harreiss,Colin Ophus,Erdmann Spiecker###
(378159, 378160)
 4D-SCED combines confocal electronmicroscopy with a pixelated detector to record focused spot-like diffractionpatterns with high angular resolution, using an order of magnitude lower dosethan previous methods.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 4, 'D', 3],[53.0, 4, 'D', 1],[2.0, 4, 'D', 0]

CN5
###Seeing Structural Evolution of Organic Molecular Nano-crystallites Using 4D Scanning Confocal Electron Diffraction|Mingjian Wu,Christina Harreiss,Colin Ophus,Erdmann Spiecker###
(378257, 378259)
 We apply it to study an active layer in organic solarcells, namely DRCN5T<missing VAR>PC71BM<missing VAR> BHJ<missing VAR> thin films.
Featurization terminated normally.
0,0,0,0,0,0.16666666666666666,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 4, 'D', 4],[151.0, 4, 'D', 2],[100.0, 4, 'D', 1]

PC71B
###Seeing Structural Evolution of Organic Molecular Nano-crystallites Using 4D Scanning Confocal Electron Diffraction|Mingjian Wu,Christina Harreiss,Colin Ophus,Erdmann Spiecker###
(378261, 378264)
 We apply it to study an active layer in organic solarcells, namely DRCN5T<missing VAR>PC71BM<missing VAR> BHJ<missing VAR> thin films.
Featurization terminated normally.
0,0,0,0,0.0136986301369863,0.9726027397260274,0,0,0,0,0,0,0,0,0.0136986301369863,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 4, 'D', 4],[155.0, 4, 'D', 2],[104.0, 4, 'D', 1]

BH
###Seeing Structural Evolution of Organic Molecular Nano-crystallites Using 4D Scanning Confocal Electron Diffraction|Mingjian Wu,Christina Harreiss,Colin Ophus,Erdmann Spiecker###
(378267, 378268)
 We apply it to study an active layer in organic solarcells, namely DRCN5T<missing VAR>PC71BM<missing VAR> BHJ<missing VAR> thin films.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 4, 'D', 4],[161.0, 4, 'D', 2],[110.0, 4, 'D', 1]

CN5
###Seeing Structural Evolution of Organic Molecular Nano-crystallites Using 4D Scanning Confocal Electron Diffraction|Mingjian Wu,Christina Harreiss,Colin Ophus,Erdmann Spiecker###
(378284, 378286)
 Structural details of DRCN5T<missing VAR>nano-crystallites oriented both in- and out-of-plane are imaged at 5 nmresolution and dose budget of 5 e<missing VAR>-/A2.
Featurization terminated normally.
0,0,0,0,0,0.16666666666666666,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 4, 'D', 5],[178.0, 4, 'D', 3],[127.0, 4, 'D', 2]

PC71B
###Seeing Structural Evolution of Organic Molecular Nano-crystallites Using 4D Scanning Confocal Electron Diffraction|Mingjian Wu,Christina Harreiss,Colin Ophus,Erdmann Spiecker###
(378387, 378390)
 We use in situ annealing toobserve the growth of the donor crystals, evolution of the crystal orientation,and progressive enrichment of PC71BM<missing VAR> at interfaces.
Featurization terminated normally.
0,0,0,0,0.0136986301369863,0.9726027397260274,0,0,0,0,0,0,0,0,0.0136986301369863,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 4, 'D', 6],[281.0, 4, 'D', 4],[230.0, 4, 'D', 3]

NF
###Energetics of the Charge Generation in Organic Donor-Acceptor Interfaces|Artur M. Andermann,Luis G. C. Rego###
(378465, 378466)
 Non-fullerene acceptor (NFA) materials have posed new paradigms for thedesign of organic solar cells (OSC), whereby efficient carrier generation isobtained with small driving forces, in order to maximize the open-circuitvoltage.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSC)
###Energetics of the Charge Generation in Organic Donor-Acceptor Interfaces|Artur M. Andermann,Luis G. C. Rego###
(378495, 378499)
 Non-fullerene acceptor (NFA) materials have posed new paradigms for thedesign of organic solar cells (OSC), whereby efficient carrier generation isobtained with small driving forces, in order to maximize the open-circuitvoltage.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Energetics of the Charge Generation in Organic Donor-Acceptor Interfaces|Artur M. Andermann,Luis G. C. Rego###
(378542, 378542)
 In this paper we use a coarse-grained mixed quantum-classical method,that combines Ehrenfest and Redfield theories, to shed light on chargegeneration process in small energy offset interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Cloaking a nanolaser|Sergey Lepeshov,Andrey Vyshnevyy,Alex Krasnok###
(379137, 379137)
 In this work, we propose a nanolaser designbased on a semiconductor nanoparticle with gain coated by a phase transitionmaterial (Sb2S3), switchable between lasing and cloaking (nonscattering) statesat the same operating frequency without change in pumping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Sb2S3)
###Cloaking a nanolaser|Sergey Lepeshov,Andrey Vyshnevyy,Alex Krasnok###
(379182, 379187)
 In this work, we propose a nanolaser designbased on a semiconductor nanoparticle with gain coated by a phase transitionmaterial (Sb2S3), switchable between lasing and cloaking (nonscattering) statesat the same operating frequency without change in pumping.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A study of singlet fission-halide perovskite interfaces|Alan R. Bowman,Samuel D. Stranks,Bartomeu Monserrat###
(379784, 379784)
 In these models we focus on replicatingtetracenes<missing VAR> electronic states correctly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(379974, 379974)
Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0.1, 'and', 2],[175.0, 150, ',', 2],[177.0, 200, 'and', 2],[311.0, 300, 'oC', 5],[338.0, 200, 'oC', 5],[403.0, 50, 'nm', 7],[454.0, 150, 'and', 8],[530.0, 300, 'oC', 8]

Ni
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(379978, 379978)
Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0.1, 'and', 2],[171.0, 150, ',', 2],[173.0, 200, 'and', 2],[307.0, 300, 'oC', 5],[334.0, 200, 'oC', 5],[399.0, 50, 'nm', 7],[450.0, 150, 'and', 8],[526.0, 300, 'oC', 8]

Cu
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380011, 380011)
Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.1, 'and', 2],[138.0, 150, ',', 2],[140.0, 200, 'and', 2],[274.0, 300, 'oC', 5],[301.0, 200, 'oC', 5],[366.0, 50, 'nm', 7],[417.0, 150, 'and', 8],[493.0, 300, 'oC', 8]

Ni
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380015, 380015)
Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.1, 'and', 2],[134.0, 150, ',', 2],[136.0, 200, 'and', 2],[270.0, 300, 'oC', 5],[297.0, 200, 'oC', 5],[362.0, 50, 'nm', 7],[413.0, 150, 'and', 8],[489.0, 300, 'oC', 8]

CuNi
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380086, 380087)
 Westudy the solution combustion synthesis process of CuNiOx using differentmolar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu,Ni Nitrates) as a function of thermal annealing tempera-tures 150, 200 and 300o<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.1, 'and', 0],[62.0, 150, ',', 0],[64.0, 200, 'and', 0],[198.0, 300, 'oC', 3],[225.0, 200, 'oC', 3],[290.0, 50, 'nm', 5],[341.0, 150, 'and', 6],[417.0, 300, 'oC', 6]

Cu
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380124, 380124)
 Westudy the solution combustion synthesis process of CuNiOx using differentmolar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu,Ni Nitrates) as a function of thermal annealing tempera-tures 150, 200 and 300o<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.1, 'and', 0],[25.0, 150, ',', 0],[27.0, 200, 'and', 0],[161.0, 300, 'oC', 3],[188.0, 200, 'oC', 3],[253.0, 50, 'nm', 5],[304.0, 150, 'and', 6],[380.0, 300, 'oC', 6]

Ni
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380128, 380128)
 Westudy the solution combustion synthesis process of CuNiOx using differentmolar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu,Ni Nitrates) as a function of thermal annealing tempera-tures 150, 200 and 300o<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.1, 'and', 0],[21.0, 150, ',', 0],[23.0, 200, 'and', 0],[157.0, 300, 'oC', 3],[184.0, 200, 'oC', 3],[249.0, 50, 'nm', 5],[300.0, 150, 'and', 6],[376.0, 300, 'oC', 6]

C
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380157, 380157)
 Westudy the solution combustion synthesis process of CuNiOx using differentmolar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu,Ni Nitrates) as a function of thermal annealing tempera-tures 150, 200 and 300o<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.1, 'and', 0],[8.0, 150, ',', 0],[6.0, 200, 'and', 0],[128.0, 300, 'oC', 3],[155.0, 200, 'oC', 3],[220.0, 50, 'nm', 5],[271.0, 150, 'and', 6],[347.0, 300, 'oC', 6]

CuNi
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380184, 380185)
 The solution combustion synthesis process, in both thin films and bulkCuNiOx, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.1, 'and', 1],[35.0, 150, ',', 1],[33.0, 200, 'and', 1],[100.0, 300, 'oC', 2],[127.0, 200, 'oC', 2],[192.0, 50, 'nm', 4],[243.0, 150, 'and', 5],[319.0, 300, 'oC', 5]

CuNi
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380219, 380220)
 Thermal analysis studies using TGA and DTA revealthat the CuNiOx thin films show a more gradual mass loss while the bulkCuNiOx exhibits a distinct combustion process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.1, 'and', 2],[70.0, 150, ',', 2],[68.0, 200, 'and', 2],[65.0, 300, 'oC', 1],[92.0, 200, 'oC', 1],[157.0, 50, 'nm', 3],[208.0, 150, 'and', 4],[284.0, 300, 'oC', 4]

CuNi
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380246, 380247)
 Thermal analysis studies using TGA and DTA revealthat the CuNiOx thin films show a more gradual mass loss while the bulkCuNiOx exhibits a distinct combustion process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.1, 'and', 2],[97.0, 150, ',', 2],[95.0, 200, 'and', 2],[38.0, 300, 'oC', 1],[65.0, 200, 'oC', 1],[130.0, 50, 'nm', 3],[181.0, 150, 'and', 4],[257.0, 300, 'oC', 4]

CuNi
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380274, 380275)
 The thin films can crystallizeto CuNiOx at annealing temperature of 300 oC irrespective to the Acac/Oxidizerratio whereas lower annealing temperatures (150 and 200 oC) produce amorphousmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 0.1, 'and', 3],[125.0, 150, ',', 3],[123.0, 200, 'and', 3],[10.0, 300, 'oC', 0],[37.0, 200, 'oC', 0],[102.0, 50, 'nm', 2],[153.0, 150, 'and', 3],[229.0, 300, 'oC', 3]

CuNi
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380340, 380341)
 A detail characterization study of solution combustion synthesizedCuNiOx including X<missing VAR>PS, UV-Vis, AFM<missing VAR> and Contact angle measurements is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 0.1, 'and', 4],[191.0, 150, ',', 4],[189.0, 200, 'and', 4],[55.0, 300, 'oC', 1],[28.0, 200, 'oC', 1],[36.0, 50, 'nm', 1],[87.0, 150, 'and', 2],[163.0, 300, 'oC', 2]

PS
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380347, 380348)
 A detail characterization study of solution combustion synthesizedCuNiOx including X<missing VAR>PS, UV-Vis, AFM<missing VAR> and Contact angle measurements is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 0.1, 'and', 4],[198.0, 150, ',', 4],[196.0, 200, 'and', 4],[62.0, 300, 'oC', 1],[35.0, 200, 'oC', 1],[29.0, 50, 'nm', 1],[80.0, 150, 'and', 2],[156.0, 300, 'oC', 2]

UV
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380351, 380352)
 A detail characterization study of solution combustion synthesizedCuNiOx including X<missing VAR>PS, UV-Vis, AFM<missing VAR> and Contact angle measurements is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[247.0, 0.1, 'and', 4],[202.0, 150, ',', 4],[200.0, 200, 'and', 4],[66.0, 300, 'oC', 1],[39.0, 200, 'oC', 1],[25.0, 50, 'nm', 1],[76.0, 150, 'and', 2],[152.0, 300, 'oC', 2]

F
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380358, 380358)
 A detail characterization study of solution combustion synthesizedCuNiOx including X<missing VAR>PS, UV-Vis, AFM<missing VAR> and Contact angle measurements is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 0.1, 'and', 4],[209.0, 150, ',', 4],[207.0, 200, 'and', 4],[73.0, 300, 'oC', 1],[46.0, 200, 'oC', 1],[19.0, 50, 'nm', 1],[70.0, 150, 'and', 2],[146.0, 300, 'oC', 2]

CuNi
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380379, 380380)
Finally, 50 nm CuNiOx thin films are introduced as HT<missing VAR>Ls within the invertedperovskite solar cell device architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 0.1, 'and', 5],[230.0, 150, ',', 5],[228.0, 200, 'and', 5],[94.0, 300, 'oC', 2],[67.0, 200, 'oC', 2],[2.0, 50, 'nm', 0],[48.0, 150, 'and', 1],[124.0, 300, 'oC', 1]

H
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380393, 380393)
Finally, 50 nm CuNiOx thin films are introduced as HT<missing VAR>Ls within the invertedperovskite solar cell device architecture.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 0.1, 'and', 5],[244.0, 150, ',', 5],[242.0, 200, 'and', 5],[108.0, 300, 'oC', 2],[81.0, 200, 'oC', 2],[16.0, 50, 'nm', 0],[35.0, 150, 'and', 1],[111.0, 300, 'oC', 1]

CuNi
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380417, 380418)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 0.1, 'and', 6],[268.0, 150, ',', 6],[266.0, 200, 'and', 6],[132.0, 300, 'oC', 3],[105.0, 200, 'oC', 3],[40.0, 50, 'nm', 1],[10.0, 150, 'and', 0],[86.0, 300, 'oC', 0]

H
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380421, 380421)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 0.1, 'and', 6],[272.0, 150, ',', 6],[270.0, 200, 'and', 6],[136.0, 300, 'oC', 3],[109.0, 200, 'oC', 3],[44.0, 50, 'nm', 1],[7.0, 150, 'and', 0],[83.0, 300, 'oC', 0]

C
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380434, 380434)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 0.1, 'and', 6],[285.0, 150, ',', 6],[283.0, 200, 'and', 6],[149.0, 300, 'oC', 3],[122.0, 200, 'oC', 3],[57.0, 50, 'nm', 1],[6.0, 150, 'and', 0],[70.0, 300, 'oC', 0]

PVSCs
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380438, 380441)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 0.1, 'and', 6],[289.0, 150, ',', 6],[287.0, 200, 'and', 6],[153.0, 300, 'oC', 3],[126.0, 200, 'oC', 3],[61.0, 50, 'nm', 1],[10.0, 150, 'and', 0],[63.0, 300, 'oC', 0]

Cs0.04
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380458, 380459)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 0.1, 'and', 6],[309.0, 150, ',', 6],[307.0, 200, 'and', 6],[173.0, 300, 'oC', 3],[146.0, 200, 'oC', 3],[81.0, 50, 'nm', 1],[30.0, 150, 'and', 0],[45.0, 300, 'oC', 0]

F
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380464, 380464)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 0.1, 'and', 6],[315.0, 150, ',', 6],[313.0, 200, 'and', 6],[179.0, 300, 'oC', 3],[152.0, 200, 'oC', 3],[87.0, 50, 'nm', 1],[36.0, 150, 'and', 0],[40.0, 300, 'oC', 0]

Pb(I0.83Br0.17)3
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380470, 380477)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1275,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6224999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 0.1, 'and', 6],[321.0, 150, ',', 6],[319.0, 200, 'and', 6],[185.0, 300, 'oC', 3],[158.0, 200, 'oC', 3],[93.0, 50, 'nm', 1],[42.0, 150, 'and', 0],[27.0, 300, 'oC', 0]

PVSCs
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380481, 380484)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 0.1, 'and', 6],[332.0, 150, ',', 6],[330.0, 200, 'and', 6],[196.0, 300, 'oC', 3],[169.0, 200, 'oC', 3],[104.0, 50, 'nm', 1],[53.0, 150, 'and', 0],[20.0, 300, 'oC', 0]

CuNi
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380491, 380492)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 0.1, 'and', 6],[342.0, 150, ',', 6],[340.0, 200, 'and', 6],[206.0, 300, 'oC', 3],[179.0, 200, 'oC', 3],[114.0, 50, 'nm', 1],[63.0, 150, 'and', 0],[12.0, 300, 'oC', 0]

H
###Thermal analysis of metal organic precursors for functional Cu doped NiOx hole transporting layer in inverted perovskite solar cells the role of solution combustion chemistry in Cu doped NiOx thin films processing|Apostolos Ioakeimidis,Ioannis T. Papadas,Eirini D. Koutsouroubi,Gerasimos S. Armatas,Stelios A. Choulis###
(380495, 380495)
 The CuNiOx HTL annealed at 150 and200 o<missing VAR>C provided PVSCs with limited functionality whereas efficienttriple-cation Cs0.04(M<missing VAR>A0.17FA0.83)0.96 Pb(I0.83Br0.17)3 based PVSCs achievedfor CuNiOx HT<missing VAR>Ls annealed at temperature 300 oC.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 0.1, 'and', 6],[346.0, 150, ',', 6],[344.0, 200, 'and', 6],[210.0, 300, 'oC', 3],[183.0, 200, 'oC', 3],[118.0, 50, 'nm', 1],[67.0, 150, 'and', 0],[9.0, 300, 'oC', 0]

I
###A topological principle for photovoltaics: Shift current in intrinsically polar insulators|A. Alexandradinata###
(380601, 380601)
 I achieve this maximization fora new class of topological insulators whose band topology is only compatiblewith a polar crystal class.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 2, ',', 3]

BaTiO3
###A topological principle for photovoltaics: Shift current in intrinsically polar insulators|A. Alexandradinata###
(380847, 380850)
 Even with wide band gaps, the frequency-integrated shiftconductivity of intrinsically polar insulators greatly exceeds e<missing VAR>3/h<missing VAR>2, andis at least three orders of magnitude larger than the conductivity of theprototypical ferroelectric BaTiO3, challenging a widely-held expectationthat small band gaps are necessary for large shift currents in topologicalmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, ',', 0]

In
###Grain Boundary Development of Silicon during Directional Solidification: A Phase-Field Study|Chuanqi Zhu,Yuichiro Koizumi,Chunwen Guo###
(380984, 380984)
 In order to control the grain structure of multi-crystalline (mc) siliconduring directional solidification, the development process of grain boundaries(G<missing VAR>Bs) with respect to the temperature gradient should be understood.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Grain Boundary Development of Silicon during Directional Solidification: A Phase-Field Study|Chuanqi Zhu,Yuichiro Koizumi,Chunwen Guo###
(381202, 381202)
 It has been found that the direction of G<missing VAR>B is governed byeither the kinetic rule or the equilibrium rule at the grain groove, dependingon the growth velocity and the orientation relationship between grains on twosides.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Grain Boundary Development of Silicon during Directional Solidification: A Phase-Field Study|Chuanqi Zhu,Yuichiro Koizumi,Chunwen Guo###
(381270, 381270)
 The G<missing VAR>B beneath a groove with facet-facet surfaces follows the bisectorof the two surfaces, while the direction of a G<missing VAR>B stays far from the bisectorwhen the groove has a rough surface.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Grain Boundary Development of Silicon during Directional Solidification: A Phase-Field Study|Chuanqi Zhu,Yuichiro Koizumi,Chunwen Guo###
(381313, 381313)
 The G<missing VAR>B beneath a groove with facet-facet surfaces follows the bisectorof the two surfaces, while the direction of a G<missing VAR>B stays far from the bisectorwhen the groove has a rough surface.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Drone Delivery Systems and Energy Management: A Review and Future Trends|Mohammad Sadra Rajabi,Pedram Beigi,Sina Aghakhani###
(381486, 381486)
 Advanced technological breakthroughs and exceptional levels of innovation areenhancing the capabilities and potential of autonomous unmanned aerial vehicles(UAVs or drones), and in so doing attracting the interest of a broader swath oflogistic companies, online retailers, and governmental agencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO2
###Drone Delivery Systems and Energy Management: A Review and Future Trends|Mohammad Sadra Rajabi,Pedram Beigi,Sina Aghakhani###
(381607, 381609)
Moreover, increasingly urgent environmental factors that include CO2 emissionsreductions and other energy-saving approaches are intensifying to need toreduce vehicular usage and congestion, which could further spur their usage.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials|Samuel Poncé,Miquel Royo,Massimiliano Stengel,Nicola Marzari,Marco Gibertini###
(381964, 381964)
 At most operating temperatures, charge transport ishindered by scattering of carriers by lattice vibrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 11, ',', 5],[285.0, 2, 'D', 7],[297.0, 3, 'D', 7],[492.0, 75, '%', 10]

SrO
###Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials|Samuel Poncé,Miquel Royo,Massimiliano Stengel,Nicola Marzari,Marco Gibertini###
(382283, 382284)
 This contribution isnot specific to 2D crystals, but also concerns the 3D case, as we demonstratevia an application to bulk SrO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 11, ',', 2],[34.0, 2, 'D', 0],[22.0, 3, 'D', 0],[172.0, 75, '%', 3]

SnS2
###Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials|Samuel Poncé,Miquel Royo,Massimiliano Stengel,Nicola Marzari,Marco Gibertini###
(382314, 382316)
 We showcase our method on a wide selection ofrelevant monolayers ranging from SnS2 to MoS2, graphene, BN, InSe, andphosphorene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 11, ',', 3],[65.0, 2, 'D', 1],[53.0, 3, 'D', 1],[140.0, 75, '%', 2]

MoS2
###Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials|Samuel Poncé,Miquel Royo,Massimiliano Stengel,Nicola Marzari,Marco Gibertini###
(382320, 382322)
 We showcase our method on a wide selection ofrelevant monolayers ranging from SnS2 to MoS2, graphene, BN, InSe, andphosphorene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 11, ',', 3],[71.0, 2, 'D', 1],[59.0, 3, 'D', 1],[134.0, 75, '%', 2]

BN
###Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials|Samuel Poncé,Miquel Royo,Massimiliano Stengel,Nicola Marzari,Marco Gibertini###
(382328, 382329)
 We showcase our method on a wide selection ofrelevant monolayers ranging from SnS2 to MoS2, graphene, BN, InSe, andphosphorene.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 11, ',', 3],[79.0, 2, 'D', 1],[67.0, 3, 'D', 1],[127.0, 75, '%', 2]

InSe
###Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials|Samuel Poncé,Miquel Royo,Massimiliano Stengel,Nicola Marzari,Marco Gibertini###
(382332, 382333)
 We showcase our method on a wide selection ofrelevant monolayers ranging from SnS2 to MoS2, graphene, BN, InSe, andphosphorene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 11, ',', 3],[83.0, 2, 'D', 1],[71.0, 3, 'D', 1],[123.0, 75, '%', 2]

InSe
###Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials|Samuel Poncé,Miquel Royo,Massimiliano Stengel,Nicola Marzari,Marco Gibertini###
(382371, 382372)
 We also discover a non-trivial temperature evolution of the Hallhole mobility in InSe whereby the mobility increases with temperature above 150K due to the mexican-hat electronic structure of the InSe valence bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 11, ',', 4],[122.0, 2, 'D', 2],[110.0, 3, 'D', 2],[84.0, 75, '%', 1]

K
###Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials|Samuel Poncé,Miquel Royo,Massimiliano Stengel,Nicola Marzari,Marco Gibertini###
(382391, 382391)
 We also discover a non-trivial temperature evolution of the Hallhole mobility in InSe whereby the mobility increases with temperature above 150K due to the mexican-hat electronic structure of the InSe valence bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 11, ',', 4],[142.0, 2, 'D', 2],[130.0, 3, 'D', 2],[65.0, 75, '%', 1]

InSe
###Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials|Samuel Poncé,Miquel Royo,Massimiliano Stengel,Nicola Marzari,Marco Gibertini###
(382411, 382412)
 We also discover a non-trivial temperature evolution of the Hallhole mobility in InSe whereby the mobility increases with temperature above 150K due to the mexican-hat electronic structure of the InSe valence bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 11, ',', 4],[162.0, 2, 'D', 2],[150.0, 3, 'D', 2],[44.0, 75, '%', 1]

GaAs/AlGaAs
###Optimization of pin GaAs/AlGaAs Heterojunction Nanocone Array Solar Cell based on its Photovoltaic Properties|Sambuddha Majumder,Sooraj Ravindran###
(382474, 382479)
Optimization of pin GaAs/AlGaAs Heterojunction Nanocone Array Solar Cell based on its Photovoltaic Properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[337.0, 5, 'degrees', 5]

In
###Optimization of pin GaAs/AlGaAs Heterojunction Nanocone Array Solar Cell based on its Photovoltaic Properties|Sambuddha Majumder,Sooraj Ravindran###
(382502, 382502)
 In this paper, we have designed and investigated the performance of radialGaAs/AlGaAs pin junction nanocone array solar cells by performing coupledoptoelectronic simulations to obtain the most optimal design configurationbased on its photovoltaic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 5, 'degrees', 4]

GaAs/AlGaAs
###Optimization of pin GaAs/AlGaAs Heterojunction Nanocone Array Solar Cell based on its Photovoltaic Properties|Sambuddha Majumder,Sooraj Ravindran###
(382528, 382533)
 In this paper, we have designed and investigated the performance of radialGaAs/AlGaAs pin junction nanocone array solar cells by performing coupledoptoelectronic simulations to obtain the most optimal design configurationbased on its photovoltaic properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[283.0, 5, 'degrees', 4]

GaAs
###Optimization of pin GaAs/AlGaAs Heterojunction Nanocone Array Solar Cell based on its Photovoltaic Properties|Sambuddha Majumder,Sooraj Ravindran###
(382599, 382600)
 Each model has been compared with itsGaAs shell counterparts for different levels of surface passivations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 5, 'degrees', 3]

AlGaAs
###Optimization of pin GaAs/AlGaAs Heterojunction Nanocone Array Solar Cell based on its Photovoltaic Properties|Sambuddha Majumder,Sooraj Ravindran###
(382638, 382640)
 It hasbeen observed that the nanocones with the AlGaAs shell has a much betterperformance compared to those having GaAs shell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 5, 'degrees', 2]

GaAs
###Optimization of pin GaAs/AlGaAs Heterojunction Nanocone Array Solar Cell based on its Photovoltaic Properties|Sambuddha Majumder,Sooraj Ravindran###
(382663, 382664)
 It hasbeen observed that the nanocones with the AlGaAs shell has a much betterperformance compared to those having GaAs shell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 5, 'degrees', 2]

AlGaAs
###Optimization of pin GaAs/AlGaAs Heterojunction Nanocone Array Solar Cell based on its Photovoltaic Properties|Sambuddha Majumder,Sooraj Ravindran###
(382669, 382671)
 AlGaAs shell acts as a strongbarrier restricting most of the photogeneration to the inner GaAs regions andit also acts as a strong passivation layer, reducing the recombination lossesdue to surface effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 5, 'degrees', 1]

GaAs
###Optimization of pin GaAs/AlGaAs Heterojunction Nanocone Array Solar Cell based on its Photovoltaic Properties|Sambuddha Majumder,Sooraj Ravindran###
(382702, 382703)
 AlGaAs shell acts as a strongbarrier restricting most of the photogeneration to the inner GaAs regions andit also acts as a strong passivation layer, reducing the recombination lossesdue to surface effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 5, 'degrees', 1]

V
###Capacitive and inductive effects in perovskite solar cells: the different roles of ionic current and ionic charge accumulation|Nicolae Filipoiu,Amanda Teodora Preda,Dragos Victor Anghel,Roxana Patru,Rachel Elizabeth Brophy,Movaffaq Kateb,Cristina Besleaga,Andrei Gabriel Tomulescu,Ioana Pintilie,Andrei Manolescu,George Alexandru Nemnes###
(382948, 382948)
 Dynamic hysteresis effects have been long known to occur in the J<missing VAR>-Vcharacteristics of perovskite solar cells (PSCs), with the ionic migrationbeing identified as the primary factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSCs)
###Capacitive and inductive effects in perovskite solar cells: the different roles of ionic current and ionic charge accumulation|Nicolae Filipoiu,Amanda Teodora Preda,Dragos Victor Anghel,Roxana Patru,Rachel Elizabeth Brophy,Movaffaq Kateb,Cristina Besleaga,Andrei Gabriel Tomulescu,Ioana Pintilie,Andrei Manolescu,George Alexandru Nemnes###
(382961, 382965)
 Dynamic hysteresis effects have been long known to occur in the J<missing VAR>-Vcharacteristics of perovskite solar cells (PSCs), with the ionic migrationbeing identified as the primary factor.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Capacitive and inductive effects in perovskite solar cells: the different roles of ionic current and ionic charge accumulation|Nicolae Filipoiu,Amanda Teodora Preda,Dragos Victor Anghel,Roxana Patru,Rachel Elizabeth Brophy,Movaffaq Kateb,Cristina Besleaga,Andrei Gabriel Tomulescu,Ioana Pintilie,Andrei Manolescu,George Alexandru Nemnes###
(383295, 383295)
 These contributions to the recombination current areassociated with capacitive and inductive effects, respectively, and wecorroborate the numerical simulations with electrochemical impedancespectroscopy (E<missing VAR>IS) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383472, 383476)
 Organic solar cells (OSCs) based on AD<missing VAR>A-type (acceptor-donor-acceptor)non-fullerene acceptors (NFAs) exhibit improved power conversion efficiency(PCE) compared to the conventional fullerene-based analogues.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NFAs)
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383503, 383507)
 Organic solar cells (OSCs) based on AD<missing VAR>A-type (acceptor-donor-acceptor)non-fullerene acceptors (NFAs) exhibit improved power conversion efficiency(PCE) compared to the conventional fullerene-based analogues.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383521, 383522)
 Organic solar cells (OSCs) based on AD<missing VAR>A-type (acceptor-donor-acceptor)non-fullerene acceptors (NFAs) exhibit improved power conversion efficiency(PCE) compared to the conventional fullerene-based analogues.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSC
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383550, 383552)
 Theoptoelectronic properties of OSC active layer blends are correlated to theirunderlying structural dynamics and therefore influence the device performance.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NFAs
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383627, 383629)
Using synergistically different neutron spectroscopy techniques, we studied thedynamics of binary and ternary blends made of the NFAs O-IDTBR<missing VAR> and O-ID<missing VAR>FBR<missing VAR> andthe regioregular donor polymer P3HT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383631, 383631)
Using synergistically different neutron spectroscopy techniques, we studied thedynamics of binary and ternary blends made of the NFAs O-IDTBR<missing VAR> and O-ID<missing VAR>FBR<missing VAR> andthe regioregular donor polymer P3HT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383633, 383633)
Using synergistically different neutron spectroscopy techniques, we studied thedynamics of binary and ternary blends made of the NFAs O-IDTBR<missing VAR> and O-ID<missing VAR>FBR<missing VAR> andthe regioregular donor polymer P3HT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383636, 383636)
Using synergistically different neutron spectroscopy techniques, we studied thedynamics of binary and ternary blends made of the NFAs O-IDTBR<missing VAR> and O-ID<missing VAR>FBR<missing VAR> andthe regioregular donor polymer P3HT<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383641, 383641)
Using synergistically different neutron spectroscopy techniques, we studied thedynamics of binary and ternary blends made of the NFAs O-IDTBR<missing VAR> and O-ID<missing VAR>FBR<missing VAR> andthe regioregular donor polymer P3HT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383643, 383643)
Using synergistically different neutron spectroscopy techniques, we studied thedynamics of binary and ternary blends made of the NFAs O-IDTBR<missing VAR> and O-ID<missing VAR>FBR<missing VAR> andthe regioregular donor polymer P3HT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FB
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383645, 383646)
Using synergistically different neutron spectroscopy techniques, we studied thedynamics of binary and ternary blends made of the NFAs O-IDTBR<missing VAR> and O-ID<missing VAR>FBR<missing VAR> andthe regioregular donor polymer P3HT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383660, 383662)
Using synergistically different neutron spectroscopy techniques, we studied thedynamics of binary and ternary blends made of the NFAs O-IDTBR<missing VAR> and O-ID<missing VAR>FBR<missing VAR> andthe regioregular donor polymer P3HT<missing VAR>.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383684, 383684)
 In addition to shedding light on the miscibilty and alloyingcharacters of the blends, a main outcome of this work is the evidenced similardynamical response of the blend components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383788, 383790)
 This finding is in contrast withour previous neutron spectroscopy and molecular dynamics studies of thefullerene-based blend P3HT<missing VAR>PCBM<missing VAR>, where we highlighted distinct behaviors ofP3HT<missing VAR> and PCBM<missing VAR> in terms of the vitrification/frustration of P3HT<missing VAR> and theplasticization of PCBM<missing VAR> by P3HT<missing VAR> upon blending.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCB
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383792, 383794)
 This finding is in contrast withour previous neutron spectroscopy and molecular dynamics studies of thefullerene-based blend P3HT<missing VAR>PCBM<missing VAR>, where we highlighted distinct behaviors ofP3HT<missing VAR> and PCBM<missing VAR> in terms of the vitrification/frustration of P3HT<missing VAR> and theplasticization of PCBM<missing VAR> by P3HT<missing VAR> upon blending.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383811, 383813)
 This finding is in contrast withour previous neutron spectroscopy and molecular dynamics studies of thefullerene-based blend P3HT<missing VAR>PCBM<missing VAR>, where we highlighted distinct behaviors ofP3HT<missing VAR> and PCBM<missing VAR> in terms of the vitrification/frustration of P3HT<missing VAR> and theplasticization of PCBM<missing VAR> by P3HT<missing VAR> upon blending.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCB
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383818, 383820)
 This finding is in contrast withour previous neutron spectroscopy and molecular dynamics studies of thefullerene-based blend P3HT<missing VAR>PCBM<missing VAR>, where we highlighted distinct behaviors ofP3HT<missing VAR> and PCBM<missing VAR> in terms of the vitrification/frustration of P3HT<missing VAR> and theplasticization of PCBM<missing VAR> by P3HT<missing VAR> upon blending.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383837, 383839)
 This finding is in contrast withour previous neutron spectroscopy and molecular dynamics studies of thefullerene-based blend P3HT<missing VAR>PCBM<missing VAR>, where we highlighted distinct behaviors ofP3HT<missing VAR> and PCBM<missing VAR> in terms of the vitrification/frustration of P3HT<missing VAR> and theplasticization of PCBM<missing VAR> by P3HT<missing VAR> upon blending.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCB
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383851, 383853)
 This finding is in contrast withour previous neutron spectroscopy and molecular dynamics studies of thefullerene-based blend P3HT<missing VAR>PCBM<missing VAR>, where we highlighted distinct behaviors ofP3HT<missing VAR> and PCBM<missing VAR> in terms of the vitrification/frustration of P3HT<missing VAR> and theplasticization of PCBM<missing VAR> by P3HT<missing VAR> upon blending.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383858, 383860)
 This finding is in contrast withour previous neutron spectroscopy and molecular dynamics studies of thefullerene-based blend P3HT<missing VAR>PCBM<missing VAR>, where we highlighted distinct behaviors ofP3HT<missing VAR> and PCBM<missing VAR> in terms of the vitrification/frustration of P3HT<missing VAR> and theplasticization of PCBM<missing VAR> by P3HT<missing VAR> upon blending.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3H
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383870, 383872)
 Alike P3HT<missing VAR> vitrification is notpresently observed.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383930, 383931)
 The absence or the weak vitrification evidenced here is inline with recent reports and is likely related to the improved PCE<missing VAR> exhibited bythe AD<missing VAR>A-type NFA-based OSCs.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383947, 383948)
 The absence or the weak vitrification evidenced here is inline with recent reports and is likely related to the improved PCE<missing VAR> exhibited bythe AD<missing VAR>A-type NFA-based OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###Structural Dynamics of Polymer:Non-Fullerene Organic Solar Cell Blends: A Neutron Spectroscopy Perspective|Mohamed Zbiri,Peter A. Gilhooly-Finn,Peter Fouquet,Christian B. Nielsen,Anne A. Y. Guilbert###
(383953, 383955)
 The absence or the weak vitrification evidenced here is inline with recent reports and is likely related to the improved PCE<missing VAR> exhibited bythe AD<missing VAR>A-type NFA-based OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HCl
###The Interfacial Structure of InP(100) in Contact with HCl and H$_2$SO$_4$ studied by Reflection Anisotropy Spectroscopy|Mario Löw,Margot Guidat,Jongmin Kim,Matthias M. May###
(383986, 383987)
The Interfacial Structure of InP(100) in Contact with HCl and H2SO4 studied by Reflection Anisotropy Spectroscopy.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 10, 'mM', 9]

H2SO4
###The Interfacial Structure of InP(100) in Contact with HCl and H$_2$SO$_4$ studied by Reflection Anisotropy Spectroscopy|Mario Löw,Margot Guidat,Jongmin Kim,Matthias M. May###
(383991, 383995)
The Interfacial Structure of InP(100) in Contact with HCl and H2SO4 studied by Reflection Anisotropy Spectroscopy.
Featurization terminated normally.
0.2857142857142857,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 10, 'mM', 9]

In
###The Interfacial Structure of InP(100) in Contact with HCl and H$_2$SO$_4$ studied by Reflection Anisotropy Spectroscopy|Mario Löw,Margot Guidat,Jongmin Kim,Matthias M. May###
(384259, 384259)
 In thisstudy, p<missing VAR>-doped InP(100) surfaces are cycled between anodic and cathodicpotentials in two different electrolytes, hydrochloric acid and sulphuric acid.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 10, 'mM', 1]

N
###The Interfacial Structure of InP(100) in Contact with HCl and H$_2$SO$_4$ studied by Reflection Anisotropy Spectroscopy|Mario Löw,Margot Guidat,Jongmin Kim,Matthias M. May###
(384390, 384390)
 Higher concentrations of0.5 N, however, already lead to initial surface corrosion.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 10, 'mM', 1]

F
###Ethylenediamine Addition Improves Performance and Suppresses Phase Instabilities in Mixed-Halide Perovskites|Margherita Taddei,Joel A. Smith,Benjamin M. Gallant,Suer Zhou,Robert J. E. Westbrook,Yangwei Shi,Jian Wang,James N. Drysdale,Declan P. McCarthy,Stephen Barlow,Seth R. Marder,Henry J. Snaith,David S. Ginger###
(384509, 384509)
 We show that adding ethylenediamine (EDA) to perovskite precursor solutionimproves the photovoltaic device performance and material stability ofhigh-bromide-content, methylammonium-free, formamidinium cesium lead halideperovskites FA1-x<missing VAR>CsxPb(I1-yBry)3 which are currently of interest forperovskite-on-Si tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 100, 'days', 1],[129.0, 1, 'mol', 2],[139.0, 1.69, 'eV', 2],[167.0, 1.22, 'V', 2],[193.0, 18.8, '%', 2]

Pb
###Ethylenediamine Addition Improves Performance and Suppresses Phase Instabilities in Mixed-Halide Perovskites|Margherita Taddei,Joel A. Smith,Benjamin M. Gallant,Suer Zhou,Robert J. E. Westbrook,Yangwei Shi,Jian Wang,James N. Drysdale,Declan P. McCarthy,Stephen Barlow,Seth R. Marder,Henry J. Snaith,David S. Ginger###
(384515, 384515)
 We show that adding ethylenediamine (EDA) to perovskite precursor solutionimproves the photovoltaic device performance and material stability ofhigh-bromide-content, methylammonium-free, formamidinium cesium lead halideperovskites FA1-x<missing VAR>CsxPb(I1-yBry)3 which are currently of interest forperovskite-on-Si tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 100, 'days', 1],[123.0, 1, 'mol', 2],[133.0, 1.69, 'eV', 2],[161.0, 1.22, 'V', 2],[187.0, 18.8, '%', 2]

I1-y
###Ethylenediamine Addition Improves Performance and Suppresses Phase Instabilities in Mixed-Halide Perovskites|Margherita Taddei,Joel A. Smith,Benjamin M. Gallant,Suer Zhou,Robert J. E. Westbrook,Yangwei Shi,Jian Wang,James N. Drysdale,Declan P. McCarthy,Stephen Barlow,Seth R. Marder,Henry J. Snaith,David S. Ginger###
(384517, 384520)
 We show that adding ethylenediamine (EDA) to perovskite precursor solutionimproves the photovoltaic device performance and material stability ofhigh-bromide-content, methylammonium-free, formamidinium cesium lead halideperovskites FA1-x<missing VAR>CsxPb(I1-yBry)3 which are currently of interest forperovskite-on-Si tandem solar cells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[101.0, 100, 'days', 1],[118.0, 1, 'mol', 2],[128.0, 1.69, 'eV', 2],[156.0, 1.22, 'V', 2],[182.0, 18.8, '%', 2]

Si
###Ethylenediamine Addition Improves Performance and Suppresses Phase Instabilities in Mixed-Halide Perovskites|Margherita Taddei,Joel A. Smith,Benjamin M. Gallant,Suer Zhou,Robert J. E. Westbrook,Yangwei Shi,Jian Wang,James N. Drysdale,Declan P. McCarthy,Stephen Barlow,Seth R. Marder,Henry J. Snaith,David S. Ginger###
(384542, 384542)
 We show that adding ethylenediamine (EDA) to perovskite precursor solutionimproves the photovoltaic device performance and material stability ofhigh-bromide-content, methylammonium-free, formamidinium cesium lead halideperovskites FA1-x<missing VAR>CsxPb(I1-yBry)3 which are currently of interest forperovskite-on-Si tandem solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 100, 'days', 1],[96.0, 1, 'mol', 2],[106.0, 1.69, 'eV', 2],[134.0, 1.22, 'V', 2],[160.0, 18.8, '%', 2]

Br
###Ethylenediamine Addition Improves Performance and Suppresses Phase Instabilities in Mixed-Halide Perovskites|Margherita Taddei,Joel A. Smith,Benjamin M. Gallant,Suer Zhou,Robert J. E. Westbrook,Yangwei Shi,Jian Wang,James N. Drysdale,Declan P. McCarthy,Stephen Barlow,Seth R. Marder,Henry J. Snaith,David S. Ginger###
(384600, 384600)
 Using spectroscopy and hyperspectralmicroscopy, we show that the additive improves film homogeneity and suppressesthe phase instability that is ubiquitous in high-Br perovskite formulations,producing films that remain stable for over 100 days in ambient conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 100, 'days', 0],[38.0, 1, 'mol', 1],[48.0, 1.69, 'eV', 1],[76.0, 1.22, 'V', 1],[102.0, 18.8, '%', 1]

VOC
###Ethylenediamine Addition Improves Performance and Suppresses Phase Instabilities in Mixed-Halide Perovskites|Margherita Taddei,Joel A. Smith,Benjamin M. Gallant,Suer Zhou,Robert J. E. Westbrook,Yangwei Shi,Jian Wang,James N. Drysdale,Declan P. McCarthy,Stephen Barlow,Seth R. Marder,Henry J. Snaith,David S. Ginger###
(384671, 384673)
With the addition of 1 mol% EDA we demonstrate 1.69 eV-gap perovskitesingle-junction p-i-n<missing VAR> devices with a VOC of 1.22 V, and a champion maximumpower point tracked power conversion efficiency of 18.8%, comparable to thebest reported methylammonium-free perovskites.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 100, 'days', 1],[33.0, 1, 'mol', 0],[23.0, 1.69, 'eV', 0],[3.0, 1.22, 'V', 0],[29.0, 18.8, '%', 0]

N
###Ethylenediamine Addition Improves Performance and Suppresses Phase Instabilities in Mixed-Halide Perovskites|Margherita Taddei,Joel A. Smith,Benjamin M. Gallant,Suer Zhou,Robert J. E. Westbrook,Yangwei Shi,Jian Wang,James N. Drysdale,Declan P. McCarthy,Stephen Barlow,Seth R. Marder,Henry J. Snaith,David S. Ginger###
(384734, 384734)
 Using nuclear magnetic resonance(NMR) spectroscopy and X<missing VAR>-ray diffraction techniques, we show that EDA reactswith FA+ in solution, rapidly and quantitatively forming imidazolinium cations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 100, 'days', 2],[96.0, 1, 'mol', 1],[86.0, 1.69, 'eV', 1],[58.0, 1.22, 'V', 1],[32.0, 18.8, '%', 1]

F
###Ethylenediamine Addition Improves Performance and Suppresses Phase Instabilities in Mixed-Halide Perovskites|Margherita Taddei,Joel A. Smith,Benjamin M. Gallant,Suer Zhou,Robert J. E. Westbrook,Yangwei Shi,Jian Wang,James N. Drysdale,Declan P. McCarthy,Stephen Barlow,Seth R. Marder,Henry J. Snaith,David S. Ginger###
(384767, 384767)
 Using nuclear magnetic resonance(NMR) spectroscopy and X<missing VAR>-ray diffraction techniques, we show that EDA reactswith FA+ in solution, rapidly and quantitatively forming imidazolinium cations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 100, 'days', 2],[129.0, 1, 'mol', 1],[119.0, 1.69, 'eV', 1],[91.0, 1.22, 'V', 1],[65.0, 18.8, '%', 1]

Mo
###Windowed Green Function MoM for Second-Kind Surface Integral Equation Formulations of Layered Media Electromagnetic Scattering Problems|Rodrigo Arrieta,Carlos Pérez-Arancibia###
(384838, 384838)
Windowed Green Function MoM<missing VAR> for Second-Kind Surface Integral Equation Formulations of Layered Media Electromagnetic Scattering Problems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Windowed Green Function MoM for Second-Kind Surface Integral Equation Formulations of Layered Media Electromagnetic Scattering Problems|Rodrigo Arrieta,Carlos Pérez-Arancibia###
(385128, 385128)
The resulting (second-kind) windowed integral equation is then numericallysolved by means of the standard Galerkin method of moments (MoM) using RWGbasis functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Windowed Green Function MoM for Second-Kind Surface Integral Equation Formulations of Layered Media Electromagnetic Scattering Problems|Rodrigo Arrieta,Carlos Pérez-Arancibia###
(385192, 385192)
 The methodology is validated by comparison with Mie-series andSommerfeld-integral exact solutions as well as against a layer Greenfunction-based MoM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSCs)
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385322, 385326)
 The long-term stability of halide perovskite solar cells (PSCs) remains thecritical problem of this photovoltaic technology.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 20, '%', 6],[380.0, 650, 'h', 6]

PSCs
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385428, 385430)
 The changes in the stability performance of the PSCs require adetailed analysis of the defects generated under external stress (light andheat).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 20, '%', 4],[276.0, 650, 'h', 4]

S
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385482, 385482)
 Using admittance, deep-level transient spectroscopy (DLTS) and reverseDLTS we determined the evolution of the defect energy levels in p-i-n<missing VAR> PCS undercontinuous light soaking stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 20, '%', 3],[224.0, 650, 'h', 3]

S
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385493, 385493)
 Using admittance, deep-level transient spectroscopy (DLTS) and reverseDLTS we determined the evolution of the defect energy levels in p-i-n<missing VAR> PCS undercontinuous light soaking stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 20, '%', 3],[213.0, 650, 'h', 3]

PCS
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385521, 385523)
 Using admittance, deep-level transient spectroscopy (DLTS) and reverseDLTS we determined the evolution of the defect energy levels in p-i-n<missing VAR> PCS undercontinuous light soaking stress.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 20, '%', 3],[183.0, 650, 'h', 3]

CsF
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385572, 385573)
 We compared the impact of the charged defectson the performance and long-term stability of the CsFAPbI3 based devices withand without Cl-doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 20, '%', 2],[133.0, 650, 'h', 2]

PbI3
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385575, 385577)
 We compared the impact of the charged defectson the performance and long-term stability of the CsFAPbI3 based devices withand without Cl-doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 20, '%', 2],[129.0, 650, 'h', 2]

Cl
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385590, 385590)
 We compared the impact of the charged defectson the performance and long-term stability of the CsFAPbI3 based devices withand without Cl-doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 20, '%', 2],[116.0, 650, 'h', 2]

PC
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385613, 385614)
 Despite the gain in the output performance of the PCSs,the devices with CsFAPbI3-xClx showed improved light soaking stability.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 20, '%', 1],[92.0, 650, 'h', 1]

CsF
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385625, 385626)
 Despite the gain in the output performance of the PCSs,the devices with CsFAPbI3-xClx showed improved light soaking stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 20, '%', 1],[80.0, 650, 'h', 1]

PbI3-x
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385628, 385632)
 Despite the gain in the output performance of the PCSs,the devices with CsFAPbI3-xClx showed improved light soaking stability.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[35.0, 20, '%', 1],[74.0, 650, 'h', 1]

Cl
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385673, 385673)
 The T<missing VAR>80(time required to reduce initial efficiency by 20%) for Cl-doped PSCs was1280h<missing VAR>, while for pure CsFAPbI3 based devices only 650h.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 20, '%', 0],[33.0, 650, 'h', 0]

PSCs
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385677, 385679)
 The T<missing VAR>80(time required to reduce initial efficiency by 20%) for Cl-doped PSCs was1280h<missing VAR>, while for pure CsFAPbI3 based devices only 650h.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 20, '%', 0],[27.0, 650, 'h', 0]

CsF
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385694, 385695)
 The T<missing VAR>80(time required to reduce initial efficiency by 20%) for Cl-doped PSCs was1280h<missing VAR>, while for pure CsFAPbI3 based devices only 650h.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 20, '%', 0],[11.0, 650, 'h', 0]

PbI3
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385697, 385699)
 The T<missing VAR>80(time required to reduce initial efficiency by 20%) for Cl-doped PSCs was1280h<missing VAR>, while for pure CsFAPbI3 based devices only 650h.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 20, '%', 0],[7.0, 650, 'h', 0]

Cl
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385740, 385740)
 We foundthat Cl-doping suppressed the formation of the antisite defects (IPb, IFA) andiodine interstitials (Ii).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 20, '%', 2],[34.0, 650, 'h', 2]

IPb
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385759, 385760)
 We foundthat Cl-doping suppressed the formation of the antisite defects (IPb, IFA) andiodine interstitials (Ii).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 20, '%', 2],[53.0, 650, 'h', 2]

IF
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385763, 385764)
 We foundthat Cl-doping suppressed the formation of the antisite defects (IPb, IFA) andiodine interstitials (Ii).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 20, '%', 2],[57.0, 650, 'h', 2]

PSCs
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385838, 385840)
 The present workprovides new insights for the defect behavior of PSCs under continuous externalstress, revealing the physical-chemical impact of the Cl-additive strategy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 20, '%', 4],[132.0, 650, 'h', 4]

Cl
###Deep-level transient spectroscopy of the charged defects in p-i-n perovskite solar cells induced by light-soaking|A. A. Vasilev,D. S. Saranin,P. A. Gostishchev,M. P. Tuhova,S. I. Didenko,A. Y. Polyakov,A. Di Carlo###
(385866, 385866)
 The present workprovides new insights for the defect behavior of PSCs under continuous externalstress, revealing the physical-chemical impact of the Cl-additive strategy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 20, '%', 4],[160.0, 650, 'h', 4]

P
###Supramolecular self-assembly as a tool to preserve electronic purity of perylene diimide chromophores|Ina Heckelmann,Zifei Lu,Joseph C. A. Prentice,Florian Auras,Tanya K. Ronson,Richard H. Friend,Jonathan R. Nitschke,Sascha Feldmann###
(386032, 386032)
Here, we report on the self-assembly of a supramolecular pseudo-cube formedfrom six modified tetradentate perylene diimides (PD<missing VAR>Is).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Supramolecular self-assembly as a tool to preserve electronic purity of perylene diimide chromophores|Ina Heckelmann,Zifei Lu,Joseph C. A. Prentice,Florian Auras,Tanya K. Ronson,Richard H. Friend,Jonathan R. Nitschke,Sascha Feldmann###
(386064, 386064)
 The rigid,shape-persistent cage sets the distance and orientation of the PD<missing VAR>I chromophoresand suppresses intramolecular rotations and vibrations, leading tonon-aggregated, monomer-like electronic properties in solution as well as inthe solid state, in contrast to the fast fluorescence quenching in the freeligand.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Supramolecular self-assembly as a tool to preserve electronic purity of perylene diimide chromophores|Ina Heckelmann,Zifei Lu,Joseph C. A. Prentice,Florian Auras,Tanya K. Ronson,Richard H. Friend,Jonathan R. Nitschke,Sascha Feldmann###
(386066, 386066)
 The rigid,shape-persistent cage sets the distance and orientation of the PD<missing VAR>I chromophoresand suppresses intramolecular rotations and vibrations, leading tonon-aggregated, monomer-like electronic properties in solution as well as inthe solid state, in contrast to the fast fluorescence quenching in the freeligand.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSCs)
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386410, 386414)
 Perovskite solar cells (PSCs) with superior performance have been recognizedas a potential candidate in photovoltaic technologies.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'D', 1],[85.0, 2, 'D', 2],[134.0, 2, 'D', 2],[148.0, 3, 'D', 2],[247.0, 20.06, '%', 4],[257.0, 3, 'D', 4],[274.0, 17.42, '%', 4],[341.0, 3, 'D', 5],[385.0, 56, '%', 6],[402.0, 2, 'D', 6],[424.0, 3, 'D', 6]

PSCs
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386485, 386487)
 However, the defects inactive perovskite layer induce non-radiative recombination which restricts theperformance and stability of the PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'D', 2],[12.0, 2, 'D', 1],[61.0, 2, 'D', 1],[75.0, 3, 'D', 1],[174.0, 20.06, '%', 3],[184.0, 3, 'D', 3],[201.0, 17.42, '%', 3],[268.0, 3, 'D', 4],[312.0, 56, '%', 5],[329.0, 2, 'D', 5],[351.0, 3, 'D', 5]

PSCs
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386527, 386529)
 The construction of thiophene-based 2Dstructure is one of the significant approaches for surface passivation ofhybrid PSCs that may combine the benefits of the stability of 2D perovskitewith the high performance of 3D perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2, 'D', 3],[28.0, 2, 'D', 0],[19.0, 2, 'D', 0],[33.0, 3, 'D', 0],[132.0, 20.06, '%', 2],[142.0, 3, 'D', 2],[159.0, 17.42, '%', 2],[226.0, 3, 'D', 3],[270.0, 56, '%', 4],[287.0, 2, 'D', 4],[309.0, 3, 'D', 4]

I
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386591, 386591)
 Here, a sulfur-rich spacer cation2-thiopheneethylamine iodide (TEAI) is synthesized as a passivation agent forthe construction of three-dimensional/two-dimensional (3D<missing VAR>/2D) perovskitebilayer structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 2, 'D', 4],[92.0, 2, 'D', 1],[43.0, 2, 'D', 1],[29.0, 3, 'D', 1],[70.0, 20.06, '%', 1],[80.0, 3, 'D', 1],[97.0, 17.42, '%', 1],[164.0, 3, 'D', 2],[208.0, 56, '%', 3],[225.0, 2, 'D', 3],[247.0, 3, 'D', 3]

I
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386642, 386642)
 TEAI-treated PSCs possess a much higher efficiency (20.06%)compared to the 3D perovskite (M<missing VAR>AFAPbI3) devices (17.42%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 2, 'D', 5],[143.0, 2, 'D', 2],[94.0, 2, 'D', 2],[80.0, 3, 'D', 2],[19.0, 20.06, '%', 0],[29.0, 3, 'D', 0],[46.0, 17.42, '%', 0],[113.0, 3, 'D', 1],[157.0, 56, '%', 2],[174.0, 2, 'D', 2],[196.0, 3, 'D', 2]

PSCs
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386646, 386648)
 TEAI-treated PSCs possess a much higher efficiency (20.06%)compared to the 3D perovskite (M<missing VAR>AFAPbI3) devices (17.42%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 2, 'D', 5],[147.0, 2, 'D', 2],[98.0, 2, 'D', 2],[84.0, 3, 'D', 2],[13.0, 20.06, '%', 0],[23.0, 3, 'D', 0],[40.0, 17.42, '%', 0],[107.0, 3, 'D', 1],[151.0, 56, '%', 2],[168.0, 2, 'D', 2],[190.0, 3, 'D', 2]

F
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386678, 386678)
 TEAI-treated PSCs possess a much higher efficiency (20.06%)compared to the 3D perovskite (M<missing VAR>AFAPbI3) devices (17.42%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 2, 'D', 5],[179.0, 2, 'D', 2],[130.0, 2, 'D', 2],[116.0, 3, 'D', 2],[17.0, 20.06, '%', 0],[7.0, 3, 'D', 0],[10.0, 17.42, '%', 0],[77.0, 3, 'D', 1],[121.0, 56, '%', 2],[138.0, 2, 'D', 2],[160.0, 3, 'D', 2]

I3
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386681, 386682)
 TEAI-treated PSCs possess a much higher efficiency (20.06%)compared to the 3D perovskite (M<missing VAR>AFAPbI3) devices (17.42%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 2, 'D', 5],[182.0, 2, 'D', 2],[133.0, 2, 'D', 2],[119.0, 3, 'D', 2],[20.0, 20.06, '%', 0],[10.0, 3, 'D', 0],[6.0, 17.42, '%', 0],[73.0, 3, 'D', 1],[117.0, 56, '%', 2],[134.0, 2, 'D', 2],[156.0, 3, 'D', 2]

P
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386703, 386703)
 Time-resolvedphotoluminescence (TRPL) and femtosecond transient absorption (T<missing VAR>A) spectroscopyare employed to investigate the effect of surface passivation on the chargecarrier dynamics of the 3D perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 2, 'D', 6],[204.0, 2, 'D', 3],[155.0, 2, 'D', 3],[141.0, 3, 'D', 3],[42.0, 20.06, '%', 1],[32.0, 3, 'D', 1],[15.0, 17.42, '%', 1],[52.0, 3, 'D', 0],[96.0, 56, '%', 1],[113.0, 2, 'D', 1],[135.0, 3, 'D', 1]

I
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386775, 386775)
 Additionally, the stability test ofTEAI-treated perovskite devices reveals significant improvement in humid (R<missing VAR>H 56%) and thermal stability as the sulfur-based 2D (TEA)2PbI4 materialself-assembles on the 3D surface making the perovskite surface hydrophobic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 2, 'D', 7],[276.0, 2, 'D', 4],[227.0, 2, 'D', 4],[213.0, 3, 'D', 4],[114.0, 20.06, '%', 2],[104.0, 3, 'D', 2],[87.0, 17.42, '%', 2],[20.0, 3, 'D', 1],[24.0, 56, '%', 0],[41.0, 2, 'D', 0],[63.0, 3, 'D', 0]

H
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386795, 386795)
 Additionally, the stability test ofTEAI-treated perovskite devices reveals significant improvement in humid (R<missing VAR>H 56%) and thermal stability as the sulfur-based 2D (TEA)2PbI4 materialself-assembles on the 3D surface making the perovskite surface hydrophobic.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 2, 'D', 7],[296.0, 2, 'D', 4],[247.0, 2, 'D', 4],[233.0, 3, 'D', 4],[134.0, 20.06, '%', 2],[124.0, 3, 'D', 2],[107.0, 17.42, '%', 2],[40.0, 3, 'D', 1],[4.0, 56, '%', 0],[21.0, 2, 'D', 0],[43.0, 3, 'D', 0]

PbI4
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386824, 386826)
 Additionally, the stability test ofTEAI-treated perovskite devices reveals significant improvement in humid (R<missing VAR>H 56%) and thermal stability as the sulfur-based 2D (TEA)2PbI4 materialself-assembles on the 3D surface making the perovskite surface hydrophobic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[425.0, 2, 'D', 7],[325.0, 2, 'D', 4],[276.0, 2, 'D', 4],[262.0, 3, 'D', 4],[163.0, 20.06, '%', 2],[153.0, 3, 'D', 2],[136.0, 17.42, '%', 2],[69.0, 3, 'D', 1],[25.0, 56, '%', 0],[8.0, 2, 'D', 0],[12.0, 3, 'D', 0]

PSCs
###Improvement of both performance and stability of photovoltaic devices by in situ formation of a sulfur-based 2D perovskite|Milon Kundar,Sahil Bhandari,Sein Chung,Kilwon Cho,Satinder K. Sharma,Ranbir Singh,Suman Kalyan Pal###
(386894, 386896)
 Ourfindings provide a reliable approach to improve device stability andperformance successively, paving the way for industrialization of PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[495.0, 2, 'D', 8],[395.0, 2, 'D', 5],[346.0, 2, 'D', 5],[332.0, 3, 'D', 5],[233.0, 20.06, '%', 3],[223.0, 3, 'D', 3],[206.0, 17.42, '%', 3],[139.0, 3, 'D', 2],[95.0, 56, '%', 1],[78.0, 2, 'D', 1],[56.0, 3, 'D', 1]

VOC
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(386921, 386923)
On the origin of tail states and VOC losses in Cu(In,Ga)Se2.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(386929, 386929)
On the origin of tail states and VOC losses in Cu(In,Ga)Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(386931, 386931)
On the origin of tail states and VOC losses in Cu(In,Ga)Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(386933, 386933)
On the origin of tail states and VOC losses in Cu(In,Ga)Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se2
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(386935, 386936)
On the origin of tail states and VOC losses in Cu(In,Ga)Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(386997, 386997)
 The detrimental effect of tail states on the radiative and non-radiativevoltage loss has been demonstrated to be a limiting factor for the open circuitvoltage in Cu(In,Ga)Se2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(386999, 386999)
 The detrimental effect of tail states on the radiative and non-radiativevoltage loss has been demonstrated to be a limiting factor for the open circuitvoltage in Cu(In,Ga)Se2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387001, 387001)
 The detrimental effect of tail states on the radiative and non-radiativevoltage loss has been demonstrated to be a limiting factor for the open circuitvoltage in Cu(In,Ga)Se2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se2
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387003, 387004)
 The detrimental effect of tail states on the radiative and non-radiativevoltage loss has been demonstrated to be a limiting factor for the open circuitvoltage in Cu(In,Ga)Se2 solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387089, 387089)
Herein, tail states in Cu(In,Ga)Se2 are revisited by studying the effect ofcompositional variations and alkali incorporation into single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387091, 387091)
Herein, tail states in Cu(In,Ga)Se2 are revisited by studying the effect ofcompositional variations and alkali incorporation into single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387093, 387093)
Herein, tail states in Cu(In,Ga)Se2 are revisited by studying the effect ofcompositional variations and alkali incorporation into single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se2
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387095, 387096)
Herein, tail states in Cu(In,Ga)Se2 are revisited by studying the effect ofcompositional variations and alkali incorporation into single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387332, 387332)
 By analyzing the voltage loss inhigh-efficiency polycrystalline and single crystalline devices, this workpresents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2based on the combined effect of doping on tail states and VOC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387334, 387334)
 By analyzing the voltage loss inhigh-efficiency polycrystalline and single crystalline devices, this workpresents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2based on the combined effect of doping on tail states and VOC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387336, 387336)
 By analyzing the voltage loss inhigh-efficiency polycrystalline and single crystalline devices, this workpresents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2based on the combined effect of doping on tail states and VOC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se2
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387338, 387339)
 By analyzing the voltage loss inhigh-efficiency polycrystalline and single crystalline devices, this workpresents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2based on the combined effect of doping on tail states and VOC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VOC
###On the origin of tail states and VOC losses in Cu(In,Ga)Se2|Omar Ramírez,Jiro Nishinaga,Felix Dingwell,Taowen Wang,Aubin Prot,Max Hilaire Wolter,Vibha Ranjan,Susanne Siebentritt###
(387364, 387366)
 By analyzing the voltage loss inhigh-efficiency polycrystalline and single crystalline devices, this workpresents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2based on the combined effect of doping on tail states and VOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NFAs)
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(387861, 387865)
 Non-fullerene acceptors (NFAs) have enabled power conversion efficienciesexceeding 19% in organic solar cells (OSCs).
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 19, '%', 0]

(OSCs)
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(387891, 387895)
 Non-fullerene acceptors (NFAs) have enabled power conversion efficienciesexceeding 19% in organic solar cells (OSCs).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 19, '%', 0]

OSCs
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(387912, 387914)
 However, the open-circuit voltageof OSCs remains low relative to their optical gap due to excessivenon-radiative recombination, and this now limits performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 19, '%', 1]

OSC
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(387971, 387973)
 Here, we consideran important aspect of OSC design, namely management of the triplet excitonpopulation formed after non-geminate charge recombination.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 19, '%', 2]

P
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388015, 388015)
 By comparing theblends PM<missing VAR>6Y11 and PM<missing VAR>6Y6, we show that the greater crystallinity of the NFAdomains in PM<missing VAR>6Y11 leads to a higher rate of triplet-triplet annihilation(TTA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 19, '%', 3]

Y11
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388018, 388019)
 By comparing theblends PM<missing VAR>6Y11 and PM<missing VAR>6Y6, we show that the greater crystallinity of the NFAdomains in PM<missing VAR>6Y11 leads to a higher rate of triplet-triplet annihilation(TTA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 19, '%', 3]

P
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388023, 388023)
 By comparing theblends PM<missing VAR>6Y11 and PM<missing VAR>6Y6, we show that the greater crystallinity of the NFAdomains in PM<missing VAR>6Y11 leads to a higher rate of triplet-triplet annihilation(TTA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 19, '%', 3]

Y6
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388026, 388027)
 By comparing theblends PM<missing VAR>6Y11 and PM<missing VAR>6Y6, we show that the greater crystallinity of the NFAdomains in PM<missing VAR>6Y11 leads to a higher rate of triplet-triplet annihilation(TTA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 19, '%', 3]

NF
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388046, 388047)
 By comparing theblends PM<missing VAR>6Y11 and PM<missing VAR>6Y6, we show that the greater crystallinity of the NFAdomains in PM<missing VAR>6Y11 leads to a higher rate of triplet-triplet annihilation(TTA).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 19, '%', 3]

P
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388055, 388055)
 By comparing theblends PM<missing VAR>6Y11 and PM<missing VAR>6Y6, we show that the greater crystallinity of the NFAdomains in PM<missing VAR>6Y11 leads to a higher rate of triplet-triplet annihilation(TTA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 19, '%', 3]

Y11
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388058, 388059)
 By comparing theblends PM<missing VAR>6Y11 and PM<missing VAR>6Y6, we show that the greater crystallinity of the NFAdomains in PM<missing VAR>6Y11 leads to a higher rate of triplet-triplet annihilation(TTA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 19, '%', 3]

Y11
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388114, 388115)
 We attribute this to the four times larger ground state dipole moment ofY11 versus Y6, which improves the long range NFA out-of-plane ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 19, '%', 4]

Y6
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388119, 388120)
 We attribute this to the four times larger ground state dipole moment ofY11 versus Y6, which improves the long range NFA out-of-plane ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 19, '%', 4]

NF
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388133, 388134)
 We attribute this to the four times larger ground state dipole moment ofY11 versus Y6, which improves the long range NFA out-of-plane ordering.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 19, '%', 4]

OSC
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388258, 388260)
 Through akinetic analysis of the recombination processes under 1-Sun illumination, weprovide a framework for determining the conditions under which TTA may improveOSC performance.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 19, '%', 6]

V
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388312, 388312)
 If these could be satisfied, TTA has the potential to reducenon-radiative voltage losses by up to several tens of m<missing VAR>V and could thus improveOSC performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 19, '%', 7]

OSC
###Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells|Lucy J. F. Hart,Jeannine Grüne,Wei Liu,Tsz-ki Lau,Joel Luke,Yi-Chun Chin,Xinyu Jiang,Huotian Zhang,Daniel J. C. Sowood,Darcy M. L. Unson,Ji-Seon Kim,Xinhui Lu,Yingping Zou,Feng Gao,Andreas Sperlich,Vladimir Dyakonov,Jun Yuan,Alexander J. Gillett###
(388323, 388325)
 If these could be satisfied, TTA has the potential to reducenon-radiative voltage losses by up to several tens of m<missing VAR>V and could thus improveOSC performance.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[443.0, 19, '%', 7]

IS
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388343, 388344)
High-sensitive M<missing VAR>IS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'oxide', 1]

S
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388415, 388415)
 This work reports an original method for the fabrication ofMetal-Isulator-Semiconductor (M<missing VAR>IS) structures with silicon nanocrystals (SiNCs) based active layers embedded in the insulating SiO 2 oxide, for highperformance solar cell and photodetector applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2, 'oxide', 0]

Si
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388427, 388427)
 This work reports an original method for the fabrication ofMetal-Isulator-Semiconductor (M<missing VAR>IS) structures with silicon nanocrystals (SiNCs) based active layers embedded in the insulating SiO 2 oxide, for highperformance solar cell and photodetector applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'oxide', 0]

Cs
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388431, 388431)
 This work reports an original method for the fabrication ofMetal-Isulator-Semiconductor (M<missing VAR>IS) structures with silicon nanocrystals (SiNCs) based active layers embedded in the insulating SiO 2 oxide, for highperformance solar cell and photodetector applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'oxide', 0]

SiO
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388448, 388449)
 This work reports an original method for the fabrication ofMetal-Isulator-Semiconductor (M<missing VAR>IS) structures with silicon nanocrystals (SiNCs) based active layers embedded in the insulating SiO 2 oxide, for highperformance solar cell and photodetector applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'oxide', 0]

Si
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388473, 388473)
 The Si NCs are producedvia the in situ solid-state dewetting of ultra-pure amorphoussilicon-oninsulator (a-SOI) grown by solid source molecular beam epitaxy(SSMBE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'oxide', 1]

NCs
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388475, 388476)
 The Si NCs are producedvia the in situ solid-state dewetting of ultra-pure amorphoussilicon-oninsulator (a-SOI) grown by solid source molecular beam epitaxy(SSMBE).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, 'oxide', 1]

I
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388515, 388515)
 The Si NCs are producedvia the in situ solid-state dewetting of ultra-pure amorphoussilicon-oninsulator (a-SOI) grown by solid source molecular beam epitaxy(SSMBE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'oxide', 1]

SS
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388534, 388535)
 The Si NCs are producedvia the in situ solid-state dewetting of ultra-pure amorphoussilicon-oninsulator (a-SOI) grown by solid source molecular beam epitaxy(SSMBE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'oxide', 1]

Si
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388552, 388552)
 The size and density of Si NCs are precisely tuned by varying thedeposited thickness of silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2, 'oxide', 2]

NCs
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388554, 388555)
 The size and density of Si NCs are precisely tuned by varying thedeposited thickness of silicon.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'oxide', 2]

F
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388602, 388602)
 The morphological characterization carried outby using atomic force microscopy (AFM) and scanning electron microscopy (SEM)shows that the Si NCs have homogeneous size with welldefined spherical shapeand densities up to 10 12 /cm 2 (inversely proportional to the square ofnominal a-Si thickness).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2, 'oxide', 3]

S
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388615, 388615)
 The morphological characterization carried outby using atomic force microscopy (AFM) and scanning electron microscopy (SEM)shows that the Si NCs have homogeneous size with welldefined spherical shapeand densities up to 10 12 /cm 2 (inversely proportional to the square ofnominal a-Si thickness).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2, 'oxide', 3]

Si
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388627, 388627)
 The morphological characterization carried outby using atomic force microscopy (AFM) and scanning electron microscopy (SEM)shows that the Si NCs have homogeneous size with welldefined spherical shapeand densities up to 10 12 /cm 2 (inversely proportional to the square ofnominal a-Si thickness).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 2, 'oxide', 3]

NCs
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388629, 388630)
 The morphological characterization carried outby using atomic force microscopy (AFM) and scanning electron microscopy (SEM)shows that the Si NCs have homogeneous size with welldefined spherical shapeand densities up to 10 12 /cm 2 (inversely proportional to the square ofnominal a-Si thickness).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, 'oxide', 3]

Si
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388682, 388682)
 The morphological characterization carried outby using atomic force microscopy (AFM) and scanning electron microscopy (SEM)shows that the Si NCs have homogeneous size with welldefined spherical shapeand densities up to 10 12 /cm 2 (inversely proportional to the square ofnominal a-Si thickness).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 2, 'oxide', 3]

H
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388708, 388708)
 The structural investigations by high resolutiontransmission electron microscopy (HR-TEM) show that the ultra-small Si NCs(with mean diameter 7 nm) are monocrystalline and free of structural defects.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 2, 'oxide', 4]

Si
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388726, 388726)
 The structural investigations by high resolutiontransmission electron microscopy (HR-TEM) show that the ultra-small Si NCs(with mean diameter 7 nm) are monocrystalline and free of structural defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2, 'oxide', 4]

NCs
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388728, 388729)
 The structural investigations by high resolutiontransmission electron microscopy (HR-TEM) show that the ultra-small Si NCs(with mean diameter 7 nm) are monocrystalline and free of structural defects.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 2, 'oxide', 4]

I
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388777, 388777)
The electrical measurements performed by current versus voltage (I-V) andphotocurrent spectroscopies on the Si-NCs based M<missing VAR>IS structures prove theefficiency of Si NCs to enhance the electrical conduction in M<missing VAR>IS structures andto increase (x<missing VAR>10 times) the photocurrent (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 2, 'oxide', 5]

V
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388779, 388779)
The electrical measurements performed by current versus voltage (I-V) andphotocurrent spectroscopies on the Si-NCs based M<missing VAR>IS structures prove theefficiency of Si NCs to enhance the electrical conduction in M<missing VAR>IS structures andto increase (x<missing VAR>10 times) the photocurrent (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 2, 'oxide', 5]

Si
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388793, 388793)
The electrical measurements performed by current versus voltage (I-V) andphotocurrent spectroscopies on the Si-NCs based M<missing VAR>IS structures prove theefficiency of Si NCs to enhance the electrical conduction in M<missing VAR>IS structures andto increase (x<missing VAR>10 times) the photocurrent (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 2, 'oxide', 5]

NCs
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388795, 388796)
The electrical measurements performed by current versus voltage (I-V) andphotocurrent spectroscopies on the Si-NCs based M<missing VAR>IS structures prove theefficiency of Si NCs to enhance the electrical conduction in M<missing VAR>IS structures andto increase (x<missing VAR>10 times) the photocurrent (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 2, 'oxide', 5]

IS
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388801, 388802)
The electrical measurements performed by current versus voltage (I-V) andphotocurrent spectroscopies on the Si-NCs based M<missing VAR>IS structures prove theefficiency of Si NCs to enhance the electrical conduction in M<missing VAR>IS structures andto increase (x<missing VAR>10 times) the photocurrent (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 2, 'oxide', 5]

Si
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388815, 388815)
The electrical measurements performed by current versus voltage (I-V) andphotocurrent spectroscopies on the Si-NCs based M<missing VAR>IS structures prove theefficiency of Si NCs to enhance the electrical conduction in M<missing VAR>IS structures andto increase (x<missing VAR>10 times) the photocurrent (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 2, 'oxide', 5]

NCs
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388817, 388818)
The electrical measurements performed by current versus voltage (I-V) andphotocurrent spectroscopies on the Si-NCs based M<missing VAR>IS structures prove theefficiency of Si NCs to enhance the electrical conduction in M<missing VAR>IS structures andto increase (x<missing VAR>10 times) the photocurrent (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 2, 'oxide', 5]

IS
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388833, 388834)
The electrical measurements performed by current versus voltage (I-V) andphotocurrent spectroscopies on the Si-NCs based M<missing VAR>IS structures prove theefficiency of Si NCs to enhance the electrical conduction in M<missing VAR>IS structures andto increase (x<missing VAR>10 times) the photocurrent (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 2, 'oxide', 5]

V
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388868, 388868)
 at bias voltage V -1 V) via thephotogeneration of additional electron-hole pairs in the M<missing VAR>IS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 2, 'oxide', 6]

V
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388873, 388873)
 at bias voltage V -1 V) via thephotogeneration of additional electron-hole pairs in the M<missing VAR>IS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 2, 'oxide', 6]

IS
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388898, 388899)
 at bias voltage V -1 V) via thephotogeneration of additional electron-hole pairs in the M<missing VAR>IS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[448.0, 2, 'oxide', 6]

Si
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388915, 388915)
 Theseresults evidence that the Si NCs obtained by the combination of MBE growth andsolid-state dewetting are perfectly suitable for the development of novel highperformance optoelectronic devices compatible with the CM<missing VAR>OS technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[465.0, 2, 'oxide', 7]

NCs
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388917, 388918)
 Theseresults evidence that the Si NCs obtained by the combination of MBE growth andsolid-state dewetting are perfectly suitable for the development of novel highperformance optoelectronic devices compatible with the CM<missing VAR>OS technology.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[467.0, 2, 'oxide', 7]

C
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388976, 388976)
 Theseresults evidence that the Si NCs obtained by the combination of MBE growth andsolid-state dewetting are perfectly suitable for the development of novel highperformance optoelectronic devices compatible with the CM<missing VAR>OS technology.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[526.0, 2, 'oxide', 7]

OS
###High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications|Mansour Aouassa,Saud Algarni,Ibrahim Althobaiti,Luc Favre,Isabelle Berbezier###
(388978, 388979)
 Theseresults evidence that the Si NCs obtained by the combination of MBE growth andsolid-state dewetting are perfectly suitable for the development of novel highperformance optoelectronic devices compatible with the CM<missing VAR>OS technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[528.0, 2, 'oxide', 7]

IP
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389052, 389053)
 Due to their tailorable optical properties, organic semiconductors showconsiderable promise for use in indoor photovoltaics (IPVs), which present asustainable route for powering ubiquitous Internet-of-Things devices in thecoming decades.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 1.83, 'eV', 5]

In
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389211, 389211)
 In this work, we explore howenergetic disorder, sub-optical gap absorption, and non-radiative open-circuitvoltage losses detrimentally affect the upper performance limits of organicsemiconductor-based IPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 1.83, 'eV', 2]

IP
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389275, 389276)
 In this work, we explore howenergetic disorder, sub-optical gap absorption, and non-radiative open-circuitvoltage losses detrimentally affect the upper performance limits of organicsemiconductor-based IPVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 1.83, 'eV', 2]

V
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389357, 389357)
 The energetic disorder,inherently present in molecular semiconductors, is generally found to shift theoptimal optical gap from 1.83 eV to 1.9 e<missing VAR>V for devices operating under LEDspectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 1.83, 'eV', 0]

IPV
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389415, 389417)
 Finally, we also describe a methodology (accompanied by acomputational tool with a graphical user interface) for predicting IPVperformance under arbitrary illumination conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 1.83, 'eV', 1]

PCEs
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389447, 389449)
 Using this methodology, weestimate the indoor PCEs of several photovoltaic materials, including thestate-of-the-art systems PM<missing VAR>6Y6 and PM<missing VAR>6BT<missing VAR>P-e<missing VAR>C9.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[97.0, 1.83, 'eV', 2]

P
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389475, 389475)
 Using this methodology, weestimate the indoor PCEs of several photovoltaic materials, including thestate-of-the-art systems PM<missing VAR>6Y6 and PM<missing VAR>6BT<missing VAR>P-e<missing VAR>C9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 1.83, 'eV', 2]

Y6
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389478, 389479)
 Using this methodology, weestimate the indoor PCEs of several photovoltaic materials, including thestate-of-the-art systems PM<missing VAR>6Y6 and PM<missing VAR>6BT<missing VAR>P-e<missing VAR>C9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.83, 'eV', 2]

P
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389483, 389483)
 Using this methodology, weestimate the indoor PCEs of several photovoltaic materials, including thestate-of-the-art systems PM<missing VAR>6Y6 and PM<missing VAR>6BT<missing VAR>P-e<missing VAR>C9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1.83, 'eV', 2]

B
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389486, 389486)
 Using this methodology, weestimate the indoor PCEs of several photovoltaic materials, including thestate-of-the-art systems PM<missing VAR>6Y6 and PM<missing VAR>6BT<missing VAR>P-e<missing VAR>C9.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1.83, 'eV', 2]

P
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389488, 389488)
 Using this methodology, weestimate the indoor PCEs of several photovoltaic materials, including thestate-of-the-art systems PM<missing VAR>6Y6 and PM<missing VAR>6BT<missing VAR>P-e<missing VAR>C9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1.83, 'eV', 2]

C9
###The Thermodynamic Limit of Indoor Photovoltaics Based on Energetically-Disordered Molecular Semiconductors|Austin M. Kay,Maura E. Fitzsimons,Gregory Burwell,Paul Meredith,Ardalan Armin,Oskar J. Sandberg###
(389491, 389492)
 Using this methodology, weestimate the indoor PCEs of several photovoltaic materials, including thestate-of-the-art systems PM<missing VAR>6Y6 and PM<missing VAR>6BT<missing VAR>P-e<missing VAR>C9.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1.83, 'eV', 2]

MoTe2
###Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2|Sikandar Aftab,Muhammad Arslan Shehzad,Muhammad Salman Ajmal,Fahmid Kabir,Muhammad Zahir Iqbal###
(389517, 389519)
Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, 'H', 3],[179.0, 1, 'T', 3],[238.0, 800, 'meV', 4],[241.0, 63, 'meV', 4],[308.0, 16, 'mV', 5],[326.0, 60, 'uA', 5],[334.0, 90.4, 'Wcm', 5],[382.0, 98, 'mAW', 6]

In
###Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2|Sikandar Aftab,Muhammad Arslan Shehzad,Muhammad Salman Ajmal,Fahmid Kabir,Muhammad Zahir Iqbal###
(389522, 389522)
 In future solar cell technologies, the thermodynamic Shockley-Queisser limitfor solar-to-current conversion in traditional p-n junctions could potentiallybe overcome with a bulk photovoltaic effect by creating an inversion brokensymmetry in piezoelectric or ferroelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2, 'H', 2],[176.0, 1, 'T', 2],[235.0, 800, 'meV', 3],[238.0, 63, 'meV', 3],[305.0, 16, 'mV', 4],[323.0, 60, 'uA', 4],[331.0, 90.4, 'Wcm', 4],[379.0, 98, 'mAW', 5]

MoTe2
###Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2|Sikandar Aftab,Muhammad Arslan Shehzad,Muhammad Salman Ajmal,Fahmid Kabir,Muhammad Zahir Iqbal###
(389644, 389646)
 Here, we unveiledmechanical distortion-induced bulk photovoltaic behavior in a two-dimensionalmaterial (2D), MoTe2, caused by phase transition and broken inversion symmetryin MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, 'H', 1],[52.0, 1, 'T', 1],[111.0, 800, 'meV', 2],[114.0, 63, 'meV', 2],[181.0, 16, 'mV', 3],[199.0, 60, 'uA', 3],[207.0, 90.4, 'Wcm', 3],[255.0, 98, 'mAW', 4]

MoTe2
###Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2|Sikandar Aftab,Muhammad Arslan Shehzad,Muhammad Salman Ajmal,Fahmid Kabir,Muhammad Zahir Iqbal###
(389668, 389670)
 Here, we unveiledmechanical distortion-induced bulk photovoltaic behavior in a two-dimensionalmaterial (2D), MoTe2, caused by phase transition and broken inversion symmetryin MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'H', 1],[28.0, 1, 'T', 1],[87.0, 800, 'meV', 2],[90.0, 63, 'meV', 2],[157.0, 16, 'mV', 3],[175.0, 60, 'uA', 3],[183.0, 90.4, 'Wcm', 3],[231.0, 98, 'mAW', 4]

MoTe2
###Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2|Sikandar Aftab,Muhammad Arslan Shehzad,Muhammad Salman Ajmal,Fahmid Kabir,Muhammad Zahir Iqbal###
(389688, 389690)
 The phase transition from single-crystalline semiconducting 2H-MoTe2to semi-metallic 1T-MoTe2 was confirmed using X<missing VAR>-ray photoelectron spectroscopy(X<missing VAR>PS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'H', 0],[8.0, 1, 'T', 0],[67.0, 800, 'meV', 1],[70.0, 63, 'meV', 1],[137.0, 16, 'mV', 2],[155.0, 60, 'uA', 2],[163.0, 90.4, 'Wcm', 2],[211.0, 98, 'mAW', 3]

MoTe2
###Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2|Sikandar Aftab,Muhammad Arslan Shehzad,Muhammad Salman Ajmal,Fahmid Kabir,Muhammad Zahir Iqbal###
(389700, 389702)
 The phase transition from single-crystalline semiconducting 2H-MoTe2to semi-metallic 1T-MoTe2 was confirmed using X<missing VAR>-ray photoelectron spectroscopy(X<missing VAR>PS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'H', 0],[2.0, 1, 'T', 0],[55.0, 800, 'meV', 1],[58.0, 63, 'meV', 1],[125.0, 16, 'mV', 2],[143.0, 60, 'uA', 2],[151.0, 90.4, 'Wcm', 2],[199.0, 98, 'mAW', 3]

S
###Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2|Sikandar Aftab,Muhammad Arslan Shehzad,Muhammad Salman Ajmal,Fahmid Kabir,Muhammad Zahir Iqbal###
(389722, 389722)
 The phase transition from single-crystalline semiconducting 2H-MoTe2to semi-metallic 1T-MoTe2 was confirmed using X<missing VAR>-ray photoelectron spectroscopy(X<missing VAR>PS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'H', 0],[24.0, 1, 'T', 0],[35.0, 800, 'meV', 1],[38.0, 63, 'meV', 1],[105.0, 16, 'mV', 2],[123.0, 60, 'uA', 2],[131.0, 90.4, 'Wcm', 2],[179.0, 98, 'mAW', 3]

VOC
###Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2|Sikandar Aftab,Muhammad Arslan Shehzad,Muhammad Salman Ajmal,Fahmid Kabir,Muhammad Zahir Iqbal###
(389823, 389825)
Experimentally, a large bulk photovoltaic response is anticipated with themaximum photovoltage VOC  16 mV and a positive signal of the ISC  60 uA (400nm, 90.4 Wcm-2) in the absence of an external electric field.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2, 'H', 2],[125.0, 1, 'T', 2],[66.0, 800, 'meV', 1],[63.0, 63, 'meV', 1],[2.0, 16, 'mV', 0],[20.0, 60, 'uA', 0],[28.0, 90.4, 'Wcm', 0],[76.0, 98, 'mAW', 1]

ISC
###Bulk Photovoltaic Effect in Two-Dimensional Distorted MoTe2|Sikandar Aftab,Muhammad Arslan Shehzad,Muhammad Salman Ajmal,Fahmid Kabir,Muhammad Zahir Iqbal###
(389841, 389843)
Experimentally, a large bulk photovoltaic response is anticipated with themaximum photovoltage VOC  16 mV and a positive signal of the ISC  60 uA (400nm, 90.4 Wcm-2) in the absence of an external electric field.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, 'H', 2],[143.0, 1, 'T', 2],[84.0, 800, 'meV', 1],[81.0, 63, 'meV', 1],[14.0, 16, 'mV', 0],[2.0, 60, 'uA', 0],[10.0, 90.4, 'Wcm', 0],[58.0, 98, 'mAW', 1]

C
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390021, 390021)
Intermolecular CT<missing VAR> excitons enable nanosecond excited-state lifetimes in NIR<missing VAR>-absorbing non-fullerene acceptors for efficient organic solar cells.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NI
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390038, 390039)
Intermolecular CT<missing VAR> excitons enable nanosecond excited-state lifetimes in NIR<missing VAR>-absorbing non-fullerene acceptors for efficient organic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y6
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390069, 390070)
 State-of-the-art Y6-type molecular acceptors exhibit nanosecond excited-statelifetimes despite their low optical gaps (1.4 e<missing VAR>V), thus allowing organic solarcells (OSCs) to achieve highly efficient charge generation with extendednear-infrared (NIR) absorption range (up to 1000 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390103, 390103)
 State-of-the-art Y6-type molecular acceptors exhibit nanosecond excited-statelifetimes despite their low optical gaps (1.4 e<missing VAR>V), thus allowing organic solarcells (OSCs) to achieve highly efficient charge generation with extendednear-infrared (NIR) absorption range (up to 1000 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390118, 390122)
 State-of-the-art Y6-type molecular acceptors exhibit nanosecond excited-statelifetimes despite their low optical gaps (1.4 e<missing VAR>V), thus allowing organic solarcells (OSCs) to achieve highly efficient charge generation with extendednear-infrared (NIR) absorption range (up to 1000 nm).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NI
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390146, 390147)
 State-of-the-art Y6-type molecular acceptors exhibit nanosecond excited-statelifetimes despite their low optical gaps (1.4 e<missing VAR>V), thus allowing organic solarcells (OSCs) to achieve highly efficient charge generation with extendednear-infrared (NIR) absorption range (up to 1000 nm).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y6
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390194, 390195)
 However, the precisemolecular-level mechanism that enables low-energy excited states in Y6-typeacceptors to achieve nanosecond lifetimes has remained elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y6
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390235, 390236)
 Here, wedemonstrate that the distinct packing of Y6 molecules in film leads to a strongintermolecular charge-transfer (iCT) character of the lowest excited state inY6 aggregates, which is absent in other low-gap acceptors such as IT<missing VAR>IC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y6
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390280, 390281)
 Here, wedemonstrate that the distinct packing of Y6 molecules in film leads to a strongintermolecular charge-transfer (iCT) character of the lowest excited state inY6 aggregates, which is absent in other low-gap acceptors such as IT<missing VAR>IC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390306, 390306)
 Here, wedemonstrate that the distinct packing of Y6 molecules in film leads to a strongintermolecular charge-transfer (iCT) character of the lowest excited state inY6 aggregates, which is absent in other low-gap acceptors such as IT<missing VAR>IC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IC
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390308, 390309)
 Here, wedemonstrate that the distinct packing of Y6 molecules in film leads to a strongintermolecular charge-transfer (iCT) character of the lowest excited state inY6 aggregates, which is absent in other low-gap acceptors such as IT<missing VAR>IC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y6
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390329, 390330)
 Due tostrong electronic couplings between the adjacent Y6 molecules, the iCT-excitonenergies are greatly reduced by up to 0.25 e<missing VAR>V with respect to excitons formedin separated molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390361, 390361)
 Due tostrong electronic couplings between the adjacent Y6 molecules, the iCT-excitonenergies are greatly reduced by up to 0.25 e<missing VAR>V with respect to excitons formedin separated molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y6
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390443, 390444)
 Importantly, despite their low energies, the iCTexcitons have reduced non-adiabatic electron-vibration couplings with theelectronic ground state, thus suppressing non-radiative recombination andallowing Y6 to overcome the well-known energy gap law.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NI
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390495, 390496)
 Our results reveal thefundamental relationship between molecular packing and nanosecond excited-statelifetimes in NIR<missing VAR>-absorbing Y6-type acceptors underlying the outstandingperformance of Y6-based OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y6
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390501, 390502)
 Our results reveal thefundamental relationship between molecular packing and nanosecond excited-statelifetimes in NIR<missing VAR>-absorbing Y6-type acceptors underlying the outstandingperformance of Y6-based OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y6
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390519, 390520)
 Our results reveal thefundamental relationship between molecular packing and nanosecond excited-statelifetimes in NIR<missing VAR>-absorbing Y6-type acceptors underlying the outstandingperformance of Y6-based OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###Intermolecular CT excitons enable nanosecond excited-state lifetimes in NIR-absorbing non-fullerene acceptors for efficient organic solar cells|Xian-Kai Chen,Christopher C. S. Chan,Sudhi Mahadevan,Yu Guo,Guichuan Zhang,He Yan,Kam Sing Wong,Hin-Lap Yip,Jean-Luc Bredas,Sai Wing Tsang,Philip C. Y. Chow###
(390524, 390526)
 Our results reveal thefundamental relationship between molecular packing and nanosecond excited-statelifetimes in NIR<missing VAR>-absorbing Y6-type acceptors underlying the outstandingperformance of Y6-based OSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell|Fadi Jebali,Atreya Majumdar,Clément Turck,Kamel-Eddine Harabi,Mathieu-Coumba Faye,Eloi Muhr,Jean-Pierre Walder,Oleksandr Bilousov,Amadeo Michaud,Elisa Vianello,Tifenn Hirtzlin,François Andrieu,Marc Bocquet,Stéphane Collin,Damien Querlioz,Jean-Michel Portal###
(390540, 390540)
Powering AI at the Edge A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 32, ',', 3]

I
###Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell|Fadi Jebali,Atreya Majumdar,Clément Turck,Kamel-Eddine Harabi,Mathieu-Coumba Faye,Eloi Muhr,Jean-Pierre Walder,Oleksandr Bilousov,Amadeo Michaud,Elisa Vianello,Tifenn Hirtzlin,François Andrieu,Marc Bocquet,Stéphane Collin,Damien Querlioz,Jean-Michel Portal###
(390609, 390609)
 Memristor-based neural networks provide an exceptional energy-efficientplatform for artificial intelligence (AI), presenting the possibility ofself-powered operation when paired with energy harvesters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 32, ',', 2]

In
###Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell|Fadi Jebali,Atreya Majumdar,Clément Turck,Kamel-Eddine Harabi,Mathieu-Coumba Faye,Eloi Muhr,Jean-Pierre Walder,Oleksandr Bilousov,Amadeo Michaud,Elisa Vianello,Tifenn Hirtzlin,François Andrieu,Marc Bocquet,Stéphane Collin,Damien Querlioz,Jean-Michel Portal###
(390704, 390704)
 In this work, we fabricated a robustbinarized neural network comprising 32,768 memristors, powered by a miniaturewide-bandgap solar cell optimized for edge applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 32, ',', 0]

In
###Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell|Fadi Jebali,Atreya Majumdar,Clément Turck,Kamel-Eddine Harabi,Mathieu-Coumba Faye,Eloi Muhr,Jean-Pierre Walder,Oleksandr Bilousov,Amadeo Michaud,Elisa Vianello,Tifenn Hirtzlin,François Andrieu,Marc Bocquet,Stéphane Collin,Damien Querlioz,Jean-Michel Portal###
(390872, 390872)
 In low illumination scenarios,it remains functional with slightly reduced accuracy, seamlessly transitioningto an approximate computing mode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 32, ',', 4]

I
###Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell|Fadi Jebali,Atreya Majumdar,Clément Turck,Kamel-Eddine Harabi,Mathieu-Coumba Faye,Eloi Muhr,Jean-Pierre Walder,Oleksandr Bilousov,Amadeo Michaud,Elisa Vianello,Tifenn Hirtzlin,François Andrieu,Marc Bocquet,Stéphane Collin,Damien Querlioz,Jean-Michel Portal###
(390975, 390975)
 Our approach lays the groundwork forself-powered AI and the creation of intelligent sensors for variousapplications in health, safety, and environment monitoring.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 32, ',', 6]

(SPV)
###Generalised Framework for Controlling and Understanding Ion Dynamics with Passivated Lead Halide Perovskites|Tomi K. Baikie,Philip Calado,Krzysztof Galkowski,Zahra Andaji-Garmaroudi,Yi-Chun Chin,Joel Luke,Charlie Henderson,Tom Dunlop,James McGettrick,Ji-Seon Kim,Akshay Rao,Jenny Nelson,Samuel D. Stranks,Piers R. B. Barnes###
(391193, 391197)
 We combine experimental observations and drift-diffusionmodelling to demonstrate a new framework to interpret surface photovoltage(SPV) measurements in perovskite systems and mixed electronic ionic conductorsmore generally.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SPV
###Generalised Framework for Controlling and Understanding Ion Dynamics with Passivated Lead Halide Perovskites|Tomi K. Baikie,Philip Calado,Krzysztof Galkowski,Zahra Andaji-Garmaroudi,Yi-Chun Chin,Joel Luke,Charlie Henderson,Tom Dunlop,James McGettrick,Ji-Seon Kim,Akshay Rao,Jenny Nelson,Samuel D. Stranks,Piers R. B. Barnes###
(391231, 391233)
 We conclude that the SPV in mixed electronic ionic conductorscan be understood in terms of the change in electric potential at the surfaceassociated with changes in the net charge within the semiconductor system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SPV
###Generalised Framework for Controlling and Understanding Ion Dynamics with Passivated Lead Halide Perovskites|Tomi K. Baikie,Philip Calado,Krzysztof Galkowski,Zahra Andaji-Garmaroudi,Yi-Chun Chin,Joel Luke,Charlie Henderson,Tom Dunlop,James McGettrick,Ji-Seon Kim,Akshay Rao,Jenny Nelson,Samuel D. Stranks,Piers R. B. Barnes###
(391351, 391353)
 Our new frameworkfor SPV has broad implications for developing strategies to improve thestability of perovskite devices by controlling defect accumulation atinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCl2
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(391899, 391901)
Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'D', 0],[2.0, 2, 'H', 0],[41.0, 2, 'D', 1],[58.0, 2, 'H', 2],[157.0, 2, 'H', 3],[365.0, 2, 'H', 6],[408.0, 2, 'H', 7]

BPV
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(391922, 391924)
 The two-dimensional (2D) bulk photovoltaic effect (BPVE) is a cornerstone forfuture highly efficient 2D solar cells and optoelectronics.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2, 'D', 1],[25.0, 2, 'H', 1],[18.0, 2, 'D', 0],[35.0, 2, 'H', 1],[134.0, 2, 'H', 2],[342.0, 2, 'H', 5],[385.0, 2, 'H', 6]

FeCl2
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(391961, 391963)
 The ferromagneticsemiconductor 2H-FeCl2 is shown to realize a new type of BPVE<missing VAR> in which spatialinversion (P), time reversal (T), and space-time reversal (PT) symmetries arebroken (PT<missing VAR>-broken).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'D', 2],[64.0, 2, 'H', 2],[19.0, 2, 'D', 1],[2.0, 2, 'H', 0],[95.0, 2, 'H', 1],[303.0, 2, 'H', 4],[346.0, 2, 'H', 5]

BPV
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(391981, 391983)
 The ferromagneticsemiconductor 2H-FeCl2 is shown to realize a new type of BPVE<missing VAR> in which spatialinversion (P), time reversal (T), and space-time reversal (PT) symmetries arebroken (PT<missing VAR>-broken).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 2],[84.0, 2, 'H', 2],[39.0, 2, 'D', 1],[22.0, 2, 'H', 0],[75.0, 2, 'H', 1],[283.0, 2, 'H', 4],[326.0, 2, 'H', 5]

(P)
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(391995, 391997)
 The ferromagneticsemiconductor 2H-FeCl2 is shown to realize a new type of BPVE<missing VAR> in which spatialinversion (P), time reversal (T), and space-time reversal (PT) symmetries arebroken (PT<missing VAR>-broken).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, 'D', 2],[98.0, 2, 'H', 2],[53.0, 2, 'D', 1],[36.0, 2, 'H', 0],[61.0, 2, 'H', 1],[269.0, 2, 'H', 4],[312.0, 2, 'H', 5]

P
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(392018, 392018)
 The ferromagneticsemiconductor 2H-FeCl2 is shown to realize a new type of BPVE<missing VAR> in which spatialinversion (P), time reversal (T), and space-time reversal (PT) symmetries arebroken (PT<missing VAR>-broken).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 2, 'D', 2],[121.0, 2, 'H', 2],[76.0, 2, 'D', 1],[59.0, 2, 'H', 0],[40.0, 2, 'H', 1],[248.0, 2, 'H', 4],[291.0, 2, 'H', 5]

P
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(392030, 392030)
 The ferromagneticsemiconductor 2H-FeCl2 is shown to realize a new type of BPVE<missing VAR> in which spatialinversion (P), time reversal (T), and space-time reversal (PT) symmetries arebroken (PT<missing VAR>-broken).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'D', 2],[133.0, 2, 'H', 2],[88.0, 2, 'D', 1],[71.0, 2, 'H', 0],[28.0, 2, 'H', 1],[236.0, 2, 'H', 4],[279.0, 2, 'H', 5]

FeCl2
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(392060, 392062)
 Using density functional theory and perturbation theory, weshow that 2H-FeCl2 exhibits giant photocurrents, photo-spin-currents, andphoto-orbital-currents under illumination by linearly polarized light.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 2, 'D', 3],[163.0, 2, 'H', 3],[118.0, 2, 'D', 2],[101.0, 2, 'H', 1],[2.0, 2, 'H', 0],[204.0, 2, 'H', 3],[247.0, 2, 'H', 4]

V2
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(392176, 392177)
 The material also demonstrates substantial photoconductance,photo-spin-conductance, and photo-orbital-conductance, with magnitudes up to4650 (nmcdotmuA/V2), 4620 (nmcdotmuA/V2 hbar/2e), and 6450(nmcdotmuA/V2 hbar/e), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 2, 'D', 5],[279.0, 2, 'H', 5],[234.0, 2, 'D', 4],[217.0, 2, 'H', 3],[118.0, 2, 'H', 2],[89.0, 2, 'H', 1],[132.0, 2, 'H', 2]

V2
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(392189, 392190)
 The material also demonstrates substantial photoconductance,photo-spin-conductance, and photo-orbital-conductance, with magnitudes up to4650 (nmcdotmuA/V2), 4620 (nmcdotmuA/V2 hbar/2e), and 6450(nmcdotmuA/V2 hbar/e), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 2, 'D', 5],[292.0, 2, 'H', 5],[247.0, 2, 'D', 4],[230.0, 2, 'H', 3],[131.0, 2, 'H', 2],[76.0, 2, 'H', 1],[119.0, 2, 'H', 2]

V2
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(392210, 392211)
 The material also demonstrates substantial photoconductance,photo-spin-conductance, and photo-orbital-conductance, with magnitudes up to4650 (nmcdotmuA/V2), 4620 (nmcdotmuA/V2 hbar/2e), and 6450(nmcdotmuA/V2 hbar/e), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 2, 'D', 5],[313.0, 2, 'H', 5],[268.0, 2, 'D', 4],[251.0, 2, 'H', 3],[152.0, 2, 'H', 2],[55.0, 2, 'H', 1],[98.0, 2, 'H', 2]

FeCl2
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(392268, 392270)
 Furthermore, theinjection-currents, shift-spin-currents, and shift-orbital-currents can bereadily switched via rotating the magnetizations of 2H-FeCl2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 2, 'D', 6],[371.0, 2, 'H', 6],[326.0, 2, 'D', 5],[309.0, 2, 'H', 4],[210.0, 2, 'H', 3],[2.0, 2, 'H', 0],[39.0, 2, 'H', 1]

BPV
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(392303, 392305)
 These resultsdemonstrate the superior performance and intriguing control of a new type ofBPVE<missing VAR> in 2H-FeCl2.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 2, 'D', 7],[406.0, 2, 'H', 7],[361.0, 2, 'D', 6],[344.0, 2, 'H', 5],[245.0, 2, 'H', 4],[37.0, 2, 'H', 1],[4.0, 2, 'H', 0]

FeCl2
###Generation and modulation of multiple 2D bulk photovoltaic effects in space-time reversal asymmetric 2H-FeCl2|Liang Liu,Xiaolin Li,Luping Du,Xi Zhang###
(392311, 392313)
 These resultsdemonstrate the superior performance and intriguing control of a new type ofBPVE<missing VAR> in 2H-FeCl2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 2, 'D', 7],[414.0, 2, 'H', 7],[369.0, 2, 'D', 6],[352.0, 2, 'H', 5],[253.0, 2, 'H', 4],[45.0, 2, 'H', 1],[2.0, 2, 'H', 0]

In
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392395, 392395)
 In this work, we embed luminescent silicon nanocrystals (Si-NCs)into a 2D array of SiO2 nanocylinders, and experimentally prove a powerfulconcept the resulting metamaterial preserves the radiative properties of theSi-NCs and inherits the spectrally-selective absorption properties of thenanocylinders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'D', 0],[169.0, 50, '%', 2],[311.0, 30, '%', 5]

Si
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392413, 392413)
 In this work, we embed luminescent silicon nanocrystals (Si-NCs)into a 2D array of SiO2 nanocylinders, and experimentally prove a powerfulconcept the resulting metamaterial preserves the radiative properties of theSi-NCs and inherits the spectrally-selective absorption properties of thenanocylinders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'D', 0],[151.0, 50, '%', 2],[293.0, 30, '%', 5]

Cs
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392416, 392416)
 In this work, we embed luminescent silicon nanocrystals (Si-NCs)into a 2D array of SiO2 nanocylinders, and experimentally prove a powerfulconcept the resulting metamaterial preserves the radiative properties of theSi-NCs and inherits the spectrally-selective absorption properties of thenanocylinders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'D', 0],[148.0, 50, '%', 2],[290.0, 30, '%', 5]

SiO2
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392429, 392431)
 In this work, we embed luminescent silicon nanocrystals (Si-NCs)into a 2D array of SiO2 nanocylinders, and experimentally prove a powerfulconcept the resulting metamaterial preserves the radiative properties of theSi-NCs and inherits the spectrally-selective absorption properties of thenanocylinders.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'D', 0],[133.0, 50, '%', 2],[275.0, 30, '%', 5]

Si
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392468, 392468)
 In this work, we embed luminescent silicon nanocrystals (Si-NCs)into a 2D array of SiO2 nanocylinders, and experimentally prove a powerfulconcept the resulting metamaterial preserves the radiative properties of theSi-NCs and inherits the spectrally-selective absorption properties of thenanocylinders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'D', 0],[96.0, 50, '%', 2],[238.0, 30, '%', 5]

NCs
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392470, 392471)
 In this work, we embed luminescent silicon nanocrystals (Si-NCs)into a 2D array of SiO2 nanocylinders, and experimentally prove a powerfulconcept the resulting metamaterial preserves the radiative properties of theSi-NCs and inherits the spectrally-selective absorption properties of thenanocylinders.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, 'D', 0],[93.0, 50, '%', 2],[235.0, 30, '%', 5]

P
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392509, 392509)
 This hierarchical approach provides increased photoluminescence(PL) intensity obtained without utilizing any lossy plasmonic components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'D', 1],[55.0, 50, '%', 1],[197.0, 30, '%', 4]

Si
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392641, 392641)
 We experimentally detect extinction spectral peaks in themetamaterial, which drive enhanced absorption in the Si-NCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'D', 3],[77.0, 50, '%', 1],[65.0, 30, '%', 2]

NCs
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392643, 392644)
 We experimentally detect extinction spectral peaks in themetamaterial, which drive enhanced absorption in the Si-NCs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 2, 'D', 3],[79.0, 50, '%', 1],[62.0, 30, '%', 2]

P
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392659, 392659)
 Consequently, themetamaterial features increased PL<missing VAR> intensity, obtained without affecting the PL<missing VAR>lifetime, angular pattern and extraction efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2, 'D', 4],[95.0, 50, '%', 2],[47.0, 30, '%', 1]

P
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392673, 392673)
 Consequently, themetamaterial features increased PL<missing VAR> intensity, obtained without affecting the PL<missing VAR>lifetime, angular pattern and extraction efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 2, 'D', 4],[109.0, 50, '%', 2],[33.0, 30, '%', 1]

P
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392709, 392709)
 Remarkably, ourbest-performing metamaterial shows +30% PL<missing VAR> intensity achieved with a loweramount of Si-NCs, compared to an equivalent planar film without nanocylinders,resulting in a 3-fold average PL<missing VAR> enhancement per Si-NC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 2, 'D', 5],[145.0, 50, '%', 3],[3.0, 30, '%', 0]

Si
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392727, 392727)
 Remarkably, ourbest-performing metamaterial shows +30% PL<missing VAR> intensity achieved with a loweramount of Si-NCs, compared to an equivalent planar film without nanocylinders,resulting in a 3-fold average PL<missing VAR> enhancement per Si-NC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 2, 'D', 5],[163.0, 50, '%', 3],[21.0, 30, '%', 0]

NCs
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392729, 392730)
 Remarkably, ourbest-performing metamaterial shows +30% PL<missing VAR> intensity achieved with a loweramount of Si-NCs, compared to an equivalent planar film without nanocylinders,resulting in a 3-fold average PL<missing VAR> enhancement per Si-NC.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 2, 'D', 5],[165.0, 50, '%', 3],[23.0, 30, '%', 0]

P
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392763, 392763)
 Remarkably, ourbest-performing metamaterial shows +30% PL<missing VAR> intensity achieved with a loweramount of Si-NCs, compared to an equivalent planar film without nanocylinders,resulting in a 3-fold average PL<missing VAR> enhancement per Si-NC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 2, 'D', 5],[199.0, 50, '%', 3],[57.0, 30, '%', 0]

Si
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392770, 392770)
 Remarkably, ourbest-performing metamaterial shows +30% PL<missing VAR> intensity achieved with a loweramount of Si-NCs, compared to an equivalent planar film without nanocylinders,resulting in a 3-fold average PL<missing VAR> enhancement per Si-NC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 2, 'D', 5],[206.0, 50, '%', 3],[64.0, 30, '%', 0]

NC
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392772, 392773)
 Remarkably, ourbest-performing metamaterial shows +30% PL<missing VAR> intensity achieved with a loweramount of Si-NCs, compared to an equivalent planar film without nanocylinders,resulting in a 3-fold average PL<missing VAR> enhancement per Si-NC.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 2, 'D', 5],[208.0, 50, '%', 3],[66.0, 30, '%', 0]

Si
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392793, 392793)
 The principledemonstrated here is general and the Si-NCs can be replaced with othersemiconductor quantum dots, rare-earth ions or organic molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 2, 'D', 6],[229.0, 50, '%', 4],[87.0, 30, '%', 1]

NCs
###Integrating quantum-dots and dielectric Mie resonators: a hierarchical metamaterial inheriting the best of both|Antonio Capretti,Arnon Lesage,Tom Gregorkiewicz###
(392795, 392796)
 The principledemonstrated here is general and the Si-NCs can be replaced with othersemiconductor quantum dots, rare-earth ions or organic molecules.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 2, 'D', 6],[231.0, 50, '%', 4],[89.0, 30, '%', 1]

PbI2
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(392980, 392982)
Effects of Defect on Work Function and Energy Alignment of PbI2 Implications for Solar Cell Applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 0.77, 'and', 4],[258.0, 0.19, 'eV', 4],[305.0, 2, 'D', 4],[337.0, 0.65, 'eV', 5]

(PbI2)
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393010, 393014)
 Two-dimensional (2D) layered lead iodide (PbI2) is an important precursor andcommon residual species during the synthesis of lead-halide perovskites.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 0.77, 'and', 3],[226.0, 0.19, 'eV', 3],[273.0, 2, 'D', 3],[305.0, 0.65, 'eV', 4]

PbI2
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393073, 393075)
 Therecurrently exist some debates and uncertainties about the effect of excess PbI2on the efficiency and stability of the solar cell with respect to its energyalignment and energetics of defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.77, 'and', 2],[165.0, 0.19, 'eV', 2],[212.0, 2, 'D', 2],[244.0, 0.65, 'eV', 3]

(VI)
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393171, 393174)
 Herein, by applying the first-principlescalculations, we investigate the energetics, changes of work function and thedefective levels associated with the iodine vacancy (VI) and interstitialiodine (II) defects of monolayer PbI2 (ML-PbI2).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.77, 'and', 1],[66.0, 0.19, 'eV', 1],[113.0, 2, 'D', 1],[145.0, 0.65, 'eV', 2]

(II)
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393183, 393186)
 Herein, by applying the first-principlescalculations, we investigate the energetics, changes of work function and thedefective levels associated with the iodine vacancy (VI) and interstitialiodine (II) defects of monolayer PbI2 (ML-PbI2).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.77, 'and', 1],[54.0, 0.19, 'eV', 1],[101.0, 2, 'D', 1],[133.0, 0.65, 'eV', 2]

PbI2
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393194, 393196)
 Herein, by applying the first-principlescalculations, we investigate the energetics, changes of work function and thedefective levels associated with the iodine vacancy (VI) and interstitialiodine (II) defects of monolayer PbI2 (ML-PbI2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.77, 'and', 1],[44.0, 0.19, 'eV', 1],[91.0, 2, 'D', 1],[123.0, 0.65, 'eV', 2]

I2
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393203, 393204)
 Herein, by applying the first-principlescalculations, we investigate the energetics, changes of work function and thedefective levels associated with the iodine vacancy (VI) and interstitialiodine (II) defects of monolayer PbI2 (ML-PbI2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.77, 'and', 1],[36.0, 0.19, 'eV', 1],[83.0, 2, 'D', 1],[115.0, 0.65, 'eV', 2]

PbI2
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393216, 393218)
 We find that the PbI2 has avery low formation energy of VI of 0.77 and 0.19 eV for dilute and highconcentration, respectively, reflecting coalescence tendency of isolated VI,much lower than that of vacancies in other 2D materials like phosphorene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.77, 'and', 0],[22.0, 0.19, 'eV', 0],[69.0, 2, 'D', 0],[101.0, 0.65, 'eV', 1]

VI
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393235, 393236)
 We find that the PbI2 has avery low formation energy of VI of 0.77 and 0.19 eV for dilute and highconcentration, respectively, reflecting coalescence tendency of isolated VI,much lower than that of vacancies in other 2D materials like phosphorene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.77, 'and', 0],[4.0, 0.19, 'eV', 0],[51.0, 2, 'D', 0],[83.0, 0.65, 'eV', 1]

VI
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393267, 393268)
 We find that the PbI2 has avery low formation energy of VI of 0.77 and 0.19 eV for dilute and highconcentration, respectively, reflecting coalescence tendency of isolated VI,much lower than that of vacancies in other 2D materials like phosphorene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0.77, 'and', 0],[27.0, 0.19, 'eV', 0],[19.0, 2, 'D', 0],[51.0, 0.65, 'eV', 1]

VI
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393301, 393302)
Similar to VI, a low formation energy of II of 0.65 eV is found, implying ahigh population of such defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.77, 'and', 1],[61.0, 0.19, 'eV', 1],[14.0, 2, 'D', 1],[17.0, 0.65, 'eV', 0]

II
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393315, 393316)
Similar to VI, a low formation energy of II of 0.65 eV is found, implying ahigh population of such defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.77, 'and', 1],[75.0, 0.19, 'eV', 1],[28.0, 2, 'D', 1],[3.0, 0.65, 'eV', 0]

Pb
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393386, 393386)
 Both defects generate in-gap defective levelswhich are mainly due to the unsaturated chemical bonds of p<missing VAR>-orbitals of exposedPb or inserted I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.77, 'and', 2],[146.0, 0.19, 'eV', 2],[99.0, 2, 'D', 2],[67.0, 0.65, 'eV', 1]

I
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393392, 393392)
 Both defects generate in-gap defective levelswhich are mainly due to the unsaturated chemical bonds of p<missing VAR>-orbitals of exposedPb or inserted I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.77, 'and', 2],[152.0, 0.19, 'eV', 2],[105.0, 2, 'D', 2],[73.0, 0.65, 'eV', 1]

VI
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393407, 393408)
 Such rich defective levels allow the VI and II as thereservoir or sinks of electron/hole carriers in PbI2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 0.77, 'and', 3],[167.0, 0.19, 'eV', 3],[120.0, 2, 'D', 3],[88.0, 0.65, 'eV', 2]

II
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393412, 393413)
 Such rich defective levels allow the VI and II as thereservoir or sinks of electron/hole carriers in PbI2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 0.77, 'and', 3],[172.0, 0.19, 'eV', 3],[125.0, 2, 'D', 3],[93.0, 0.65, 'eV', 2]

PbI2
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393436, 393438)
 Such rich defective levels allow the VI and II as thereservoir or sinks of electron/hole carriers in PbI2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 0.77, 'and', 3],[196.0, 0.19, 'eV', 3],[149.0, 2, 'D', 3],[117.0, 0.65, 'eV', 2]

PbI2
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393454, 393456)
 Our results suggest thatthe remnant PbI2 in perovskite M<missing VAR>APbI3 (or FAPbI3) would play dual oppositeroles in affecting the efficiency of the perovskite (1) Forming Schottky-typeinterface with M<missing VAR>APbI3 (or FAPbI3) in which the built-in potential wouldfacilitate the electron-hole separation and prolong the carrier lifetime; (2)Acting as the recombination centers due to the deep defective levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 0.77, 'and', 4],[214.0, 0.19, 'eV', 4],[167.0, 2, 'D', 4],[135.0, 0.65, 'eV', 3]

PbI3
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393464, 393466)
 Our results suggest thatthe remnant PbI2 in perovskite M<missing VAR>APbI3 (or FAPbI3) would play dual oppositeroles in affecting the efficiency of the perovskite (1) Forming Schottky-typeinterface with M<missing VAR>APbI3 (or FAPbI3) in which the built-in potential wouldfacilitate the electron-hole separation and prolong the carrier lifetime; (2)Acting as the recombination centers due to the deep defective levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 0.77, 'and', 4],[224.0, 0.19, 'eV', 4],[177.0, 2, 'D', 4],[145.0, 0.65, 'eV', 3]

F
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393471, 393471)
 Our results suggest thatthe remnant PbI2 in perovskite M<missing VAR>APbI3 (or FAPbI3) would play dual oppositeroles in affecting the efficiency of the perovskite (1) Forming Schottky-typeinterface with M<missing VAR>APbI3 (or FAPbI3) in which the built-in potential wouldfacilitate the electron-hole separation and prolong the carrier lifetime; (2)Acting as the recombination centers due to the deep defective levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 0.77, 'and', 4],[231.0, 0.19, 'eV', 4],[184.0, 2, 'D', 4],[152.0, 0.65, 'eV', 3]

I3
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393474, 393475)
 Our results suggest thatthe remnant PbI2 in perovskite M<missing VAR>APbI3 (or FAPbI3) would play dual oppositeroles in affecting the efficiency of the perovskite (1) Forming Schottky-typeinterface with M<missing VAR>APbI3 (or FAPbI3) in which the built-in potential wouldfacilitate the electron-hole separation and prolong the carrier lifetime; (2)Acting as the recombination centers due to the deep defective levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 0.77, 'and', 4],[234.0, 0.19, 'eV', 4],[187.0, 2, 'D', 4],[155.0, 0.65, 'eV', 3]

PbI3
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393520, 393522)
 Our results suggest thatthe remnant PbI2 in perovskite M<missing VAR>APbI3 (or FAPbI3) would play dual oppositeroles in affecting the efficiency of the perovskite (1) Forming Schottky-typeinterface with M<missing VAR>APbI3 (or FAPbI3) in which the built-in potential wouldfacilitate the electron-hole separation and prolong the carrier lifetime; (2)Acting as the recombination centers due to the deep defective levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 0.77, 'and', 4],[280.0, 0.19, 'eV', 4],[233.0, 2, 'D', 4],[201.0, 0.65, 'eV', 3]

F
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393527, 393527)
 Our results suggest thatthe remnant PbI2 in perovskite M<missing VAR>APbI3 (or FAPbI3) would play dual oppositeroles in affecting the efficiency of the perovskite (1) Forming Schottky-typeinterface with M<missing VAR>APbI3 (or FAPbI3) in which the built-in potential wouldfacilitate the electron-hole separation and prolong the carrier lifetime; (2)Acting as the recombination centers due to the deep defective levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 0.77, 'and', 4],[287.0, 0.19, 'eV', 4],[240.0, 2, 'D', 4],[208.0, 0.65, 'eV', 3]

I3
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393530, 393531)
 Our results suggest thatthe remnant PbI2 in perovskite M<missing VAR>APbI3 (or FAPbI3) would play dual oppositeroles in affecting the efficiency of the perovskite (1) Forming Schottky-typeinterface with M<missing VAR>APbI3 (or FAPbI3) in which the built-in potential wouldfacilitate the electron-hole separation and prolong the carrier lifetime; (2)Acting as the recombination centers due to the deep defective levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 0.77, 'and', 4],[290.0, 0.19, 'eV', 4],[243.0, 2, 'D', 4],[211.0, 0.65, 'eV', 3]

II
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393626, 393627)
 Topromote the efficiency by the Schottky effect, our work reveals that the IIdefect is favored, and to reduce the recombination centers the VI defect shouldbe suppressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 0.77, 'and', 5],[386.0, 0.19, 'eV', 5],[339.0, 2, 'D', 5],[307.0, 0.65, 'eV', 4]

VI
###Effects of Defect on Work Function and Energy Alignment of PbI2: Implications for Solar Cell Applications|Hongfei Chen,Hejin Yan,Yongqing Cai###
(393651, 393652)
 Topromote the efficiency by the Schottky effect, our work reveals that the IIdefect is favored, and to reduce the recombination centers the VI defect shouldbe suppressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 0.77, 'and', 5],[411.0, 0.19, 'eV', 5],[364.0, 2, 'D', 5],[332.0, 0.65, 'eV', 4]

U
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(393708, 393708)
High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[442.0, 600, 'us', 6],[544.0, 300, 'us', 7],[589.0, 710, 'mV', 7]

P
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(393718, 393718)
High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 600, 'us', 6],[534.0, 300, 'us', 7],[579.0, 710, 'mV', 7]

U
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(393751, 393751)
 High-quality multicrystalline Upgraded Metallurgical Grade Silicon (UMG-Si)offers significant advantages over conventional polysilicon-based PVtechnology, associated to lower cost, lower energy budget and lower carbonfootprint.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 600, 'us', 5],[501.0, 300, 'us', 6],[546.0, 710, 'mV', 6]

Si
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(393755, 393755)
 High-quality multicrystalline Upgraded Metallurgical Grade Silicon (UMG-Si)offers significant advantages over conventional polysilicon-based PVtechnology, associated to lower cost, lower energy budget and lower carbonfootprint.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 600, 'us', 5],[497.0, 300, 'us', 6],[542.0, 710, 'mV', 6]

PV
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(393773, 393774)
 High-quality multicrystalline Upgraded Metallurgical Grade Silicon (UMG-Si)offers significant advantages over conventional polysilicon-based PVtechnology, associated to lower cost, lower energy budget and lower carbonfootprint.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 600, 'us', 5],[478.0, 300, 'us', 6],[523.0, 710, 'mV', 6]

P
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(393942, 393942)
 The aim of this study is twofold on the one hand, to ascertain theefficiency potential of solar cells based on this material in terms of carrierlifetime; and on the other hand, to explore, as a result of that, the adoptionof high-efficiency cell architectures by establishing an effective rear-sidepassivation scheme for the implementation of passivated emitter rear contact(PERC) devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 600, 'us', 4],[310.0, 300, 'us', 5],[355.0, 710, 'mV', 5]

C
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(393945, 393945)
 The aim of this study is twofold on the one hand, to ascertain theefficiency potential of solar cells based on this material in terms of carrierlifetime; and on the other hand, to explore, as a result of that, the adoptionof high-efficiency cell architectures by establishing an effective rear-sidepassivation scheme for the implementation of passivated emitter rear contact(PERC) devices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 600, 'us', 4],[307.0, 300, 'us', 5],[352.0, 710, 'mV', 5]

P
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(393991, 393991)
 The carrier lifetime and the surface passivation efficacy areinvestigated for different passivating layer configurations after single anddouble P-diffusion gettering processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 600, 'us', 3],[261.0, 300, 'us', 4],[306.0, 710, 'mV', 4]

Al2O3
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394008, 394011)
 Layer stacks consisting of Al2O3,SiOxNy and a-SiNxH capping overlayers have been optimized, on industrial size,saw-damage-etched UMG wafers and results compared to those obtained usingreference iodine-ethanol (IE) passivation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 600, 'us', 2],[241.0, 300, 'us', 3],[286.0, 710, 'mV', 3]

Si
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394015, 394015)
 Layer stacks consisting of Al2O3,SiOxNy and a-SiNxH capping overlayers have been optimized, on industrial size,saw-damage-etched UMG wafers and results compared to those obtained usingreference iodine-ethanol (IE) passivation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 600, 'us', 2],[237.0, 300, 'us', 3],[282.0, 710, 'mV', 3]

Si
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394023, 394023)
 Layer stacks consisting of Al2O3,SiOxNy and a-SiNxH capping overlayers have been optimized, on industrial size,saw-damage-etched UMG wafers and results compared to those obtained usingreference iodine-ethanol (IE) passivation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 600, 'us', 2],[229.0, 300, 'us', 3],[274.0, 710, 'mV', 3]

H
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394025, 394025)
 Layer stacks consisting of Al2O3,SiOxNy and a-SiNxH capping overlayers have been optimized, on industrial size,saw-damage-etched UMG wafers and results compared to those obtained usingreference iodine-ethanol (IE) passivation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 600, 'us', 2],[227.0, 300, 'us', 3],[272.0, 710, 'mV', 3]

U
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394052, 394052)
 Layer stacks consisting of Al2O3,SiOxNy and a-SiNxH capping overlayers have been optimized, on industrial size,saw-damage-etched UMG wafers and results compared to those obtained usingreference iodine-ethanol (IE) passivation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 600, 'us', 2],[200.0, 300, 'us', 3],[245.0, 710, 'mV', 3]

I
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394080, 394080)
 Layer stacks consisting of Al2O3,SiOxNy and a-SiNxH capping overlayers have been optimized, on industrial size,saw-damage-etched UMG wafers and results compared to those obtained usingreference iodine-ethanol (IE) passivation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 600, 'us', 2],[172.0, 300, 'us', 3],[217.0, 710, 'mV', 3]

U
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394190, 394190)
Carrier lifetimes over 600 us at 1015 cm-3 injection level as well as up to790 us locally have been measured in UMG-Si wafers passivated with IE<missing VAR> after aPhosphorus Diffusion Gettering (PDG), demonstrating the suitability of thematerial for high-efficiency cell architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 600, 'us', 0],[62.0, 300, 'us', 1],[107.0, 710, 'mV', 1]

Si
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394194, 394194)
Carrier lifetimes over 600 us at 1015 cm-3 injection level as well as up to790 us locally have been measured in UMG-Si wafers passivated with IE<missing VAR> after aPhosphorus Diffusion Gettering (PDG), demonstrating the suitability of thematerial for high-efficiency cell architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 600, 'us', 0],[58.0, 300, 'us', 1],[103.0, 710, 'mV', 1]

I
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394202, 394202)
Carrier lifetimes over 600 us at 1015 cm-3 injection level as well as up to790 us locally have been measured in UMG-Si wafers passivated with IE<missing VAR> after aPhosphorus Diffusion Gettering (PDG), demonstrating the suitability of thematerial for high-efficiency cell architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 600, 'us', 0],[50.0, 300, 'us', 1],[95.0, 710, 'mV', 1]

P
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394217, 394217)
Carrier lifetimes over 600 us at 1015 cm-3 injection level as well as up to790 us locally have been measured in UMG-Si wafers passivated with IE<missing VAR> after aPhosphorus Diffusion Gettering (PDG), demonstrating the suitability of thematerial for high-efficiency cell architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 600, 'us', 0],[35.0, 300, 'us', 1],[80.0, 710, 'mV', 1]

Al2O3
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394263, 394266)
 Values higher than 300 us havebeen obtained with Al2O3-based passivation layers for gettered UMG wafers, withimplied Voc values up to 710 mV.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 600, 'us', 1],[11.0, 300, 'us', 0],[31.0, 710, 'mV', 0]

U
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394278, 394278)
 Values higher than 300 us havebeen obtained with Al2O3-based passivation layers for gettered UMG wafers, withimplied Voc values up to 710 mV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 600, 'us', 1],[26.0, 300, 'us', 0],[19.0, 710, 'mV', 0]

U
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394326, 394326)
 These record-breaking lifetimes and i<missing VAR>Vocfigures obtained with p<missing VAR>-type multicrystalline UMG-Si material demonstrate asignificant upgrading of its electronic quality by means of industry-scalabletechnical processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 600, 'us', 2],[74.0, 300, 'us', 1],[29.0, 710, 'mV', 1]

Si
###High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures|Nerea Dasilva-Villanueva,Bülent Arıkan,Hasan Hüseyin Canar,David Fuertes Marrón,Bo-Kyung Hong,Ahmet Emin Keçeci,Sümeyye Koçak Bütüner,Gence Bektaş,Raşit Turan,Carlos del Cañizo###
(394330, 394330)
 These record-breaking lifetimes and i<missing VAR>Vocfigures obtained with p<missing VAR>-type multicrystalline UMG-Si material demonstrate asignificant upgrading of its electronic quality by means of industry-scalabletechnical processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 600, 'us', 2],[78.0, 300, 'us', 1],[33.0, 710, 'mV', 1]

(HCSC)
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394414, 394419)
 The hot carrier solar cell (HCSC) has the potential for converting solarenergy into electrochemical energy with an efficiency of 85.4%.
Featurization successful!
0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 85.4, '%', 0],[302.0, 82, '%', 5],[387.0, 2540, 'K', 6]

HCSC
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394477, 394480)
 For this, inaddition to an idealized light absorber, the HCSC has to be connected to theexternal load by means of the so-called emphmono-energetic energy selectivecontacts (E<missing VAR>SCs).
Featurization terminated normally.
0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 85.4, '%', 1],[241.0, 82, '%', 4],[326.0, 2540, 'K', 5]

Cs
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394526, 394526)
 For this, inaddition to an idealized light absorber, the HCSC has to be connected to theexternal load by means of the so-called emphmono-energetic energy selectivecontacts (E<missing VAR>SCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 85.4, '%', 1],[195.0, 82, '%', 4],[280.0, 2540, 'K', 5]

In
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394603, 394603)
In this respect, we model electron transport in non-ideal E<missing VAR>SCs using thetransport theory proposed by Datta and Landauer which has allowed us tocalculate the value of these parameters as a function of the temperature andelectrochemical potential of operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 85.4, '%', 4],[118.0, 82, '%', 1],[203.0, 2540, 'K', 2]

SCs
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394625, 394626)
In this respect, we model electron transport in non-ideal E<missing VAR>SCs using thetransport theory proposed by Datta and Landauer which has allowed us tocalculate the value of these parameters as a function of the temperature andelectrochemical potential of operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 85.4, '%', 4],[95.0, 82, '%', 1],[180.0, 2540, 'K', 2]

HCSC
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394712, 394715)
 Our findings also reveal that, topreserve the HCSC efficiency above 82%, the E<missing VAR>SCs could require in the order of3 times 1019 cm-3 electron states.
Featurization terminated normally.
0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 85.4, '%', 5],[6.0, 82, '%', 0],[91.0, 2540, 'K', 1]

SCs
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394728, 394729)
 Our findings also reveal that, topreserve the HCSC efficiency above 82%, the E<missing VAR>SCs could require in the order of3 times 1019 cm-3 electron states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 85.4, '%', 5],[7.0, 82, '%', 0],[77.0, 2540, 'K', 1]

As
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394760, 394760)
 As the E<missing VAR>SCs depart from ideality,the temperature of the hot carriers at which optimum efficiency is obtainedincreases to above 2540 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 85.4, '%', 6],[39.0, 82, '%', 1],[46.0, 2540, 'K', 0]

SCs
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394765, 394766)
 As the E<missing VAR>SCs depart from ideality,the temperature of the hot carriers at which optimum efficiency is obtainedincreases to above 2540 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 85.4, '%', 6],[44.0, 82, '%', 1],[40.0, 2540, 'K', 0]

HCSC
###Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell|Antonio Martí,Elisa Antolín,Iñigo Ramiro###
(394923, 394926)
 We are not aware of any material exhibitingthis figure of merit which illustrates the difficulty in putting the HCSCconcept into practice.
Featurization terminated normally.
0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[473.0, 85.4, '%', 8],[202.0, 82, '%', 3],[117.0, 2540, 'K', 2]

NI
###Spectrally-tunable Dielectric Grating-based Metasurface for Broadband Planar Light Concentration|Ameen Elikkottil,Mohammed H Tahersima,MVN Surendra Gupta,Rishi Maiti,Volker J. Sorger,Bala Pesala###
(395278, 395279)
 We integrate thisfunctional device onto a window glass transmitting visible light whilesimultaneously guiding the near infrared portion (NIR) of sunlight to the edgesof the glass window where it can be converted to electricity by a small PVmodule.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 5.25, '%', 2],[217.0, 4.2, '%', 3],[242.0, 2.0, 'We', 3]

PV
###Spectrally-tunable Dielectric Grating-based Metasurface for Broadband Planar Light Concentration|Ameen Elikkottil,Mohammed H Tahersima,MVN Surendra Gupta,Rishi Maiti,Volker J. Sorger,Bala Pesala###
(395322, 395323)
 We integrate thisfunctional device onto a window glass transmitting visible light whilesimultaneously guiding the near infrared portion (NIR) of sunlight to the edgesof the glass window where it can be converted to electricity by a small PVmodule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 5.25, '%', 2],[173.0, 4.2, '%', 3],[198.0, 2.0, 'We', 3]

NI
###Spectrally-tunable Dielectric Grating-based Metasurface for Broadband Planar Light Concentration|Ameen Elikkottil,Mohammed H Tahersima,MVN Surendra Gupta,Rishi Maiti,Volker J. Sorger,Bala Pesala###
(395361, 395362)
 Utilizing the grating design flexibility, we tune the spectra to enableguiding of the near NIR<missing VAR> sunlight portion and realize polarization independencedemonstrated using finite difference time domain simulations.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 5.25, '%', 1],[134.0, 4.2, '%', 2],[159.0, 2.0, 'We', 2]

NI
###Spectrally-tunable Dielectric Grating-based Metasurface for Broadband Planar Light Concentration|Ameen Elikkottil,Mohammed H Tahersima,MVN Surendra Gupta,Rishi Maiti,Volker J. Sorger,Bala Pesala###
(395418, 395419)
 Experimentally,we observe about 5.25% of optical guiding efficiency in the NIR<missing VAR> region(700-1000 nm), leaving majority of the visible portion to be transmitted fornatural room lighting.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 5.25, '%', 0],[77.0, 4.2, '%', 1],[102.0, 2.0, 'We', 1]

NI
###Spectrally-tunable Dielectric Grating-based Metasurface for Broadband Planar Light Concentration|Ameen Elikkottil,Mohammed H Tahersima,MVN Surendra Gupta,Rishi Maiti,Volker J. Sorger,Bala Pesala###
(395501, 395502)
 Integrating the solar cell at the window edge, we find apower conversion efficiency of about 4.2% of NIR<missing VAR> light on a prototype of area25 mm 2. We confirm that the majority of the loss is due to the absorption,scattering and fabrication non-uniformity over large area which can be furtheroptimized in future.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 5.25, '%', 1],[5.0, 4.2, '%', 0],[19.0, 2.0, 'We', 0]

III
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395648, 395650)
Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395652, 395652)
Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395654, 395655)
Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395711, 395713)
 Numerous efforts have been devoted to improve the electronic and opticalproperties of III-V compound materials via reduction of their nonradiativestates, aiming at highly-efficient III-V sub-micrometer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395715, 395715)
 Numerous efforts have been devoted to improve the electronic and opticalproperties of III-V compound materials via reduction of their nonradiativestates, aiming at highly-efficient III-V sub-micrometer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395743, 395745)
 Numerous efforts have been devoted to improve the electronic and opticalproperties of III-V compound materials via reduction of their nonradiativestates, aiming at highly-efficient III-V sub-micrometer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395747, 395747)
 Numerous efforts have been devoted to improve the electronic and opticalproperties of III-V compound materials via reduction of their nonradiativestates, aiming at highly-efficient III-V sub-micrometer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395814, 395816)
 Despite manyadvances, there is still a controversial debate on which combination ofchemical treatment and capping dielectric layer can best reproducibly protectthe crystal surface of III-Vs, while being compatible with readily availableplasma deposition methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395893, 395898)
 This work reports on a systematic experimental studyon the role of sulfide ammonium chemical treatment followed by dielectriccoating in the passivation effect of GaAs/AlGaAs nanopillars.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(395976, 395977)
 Here, the sulfurized GaAssurfaces, the high level of hydrogen ions and the low frequency (380 k<missing VAR>Hz)excitation plasma that enable intense bombardment of hydrogen, all seem toprovide a combined active role in the passivation mechanism of the pillars.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(396084, 396084)
 Weobserve up to a 29-fold increase of the photoluminescence (PL) integratedintensity for the best samples as compared to untreated nanopillars.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(396157, 396157)
 Time-resolved micro-PL<missing VAR>measurements display nanosecond lifetimes resulting in a record-low surfacerecombination velocity for dry etched GaAs nanopillars.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(396192, 396193)
 Time-resolved micro-PL<missing VAR>measurements display nanosecond lifetimes resulting in a record-low surfacerecombination velocity for dry etched GaAs nanopillars.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices|Bejoys Jacob,Filipe Camarneiro,Jérôme Borme,Oleksandr Bondarchuk,Jana B. Nieder,Bruno Romeira###
(396240, 396240)
 We achieve robust,stable and long-term passivated nanopillar surfaces which creates expectationsfor remarkable high internal quantum efficiency (IQE>0.5) in nanoscalelight-emitting diodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ScAgC
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396334, 396336)
First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 0, 'to', 6],[286.0, 10, 'eV', 6],[417.0, 8.5, 'eV', 8],[421.0, 300, 'K', 9],[447.0, 33, '%', 9],[500.0, 1200, 'K', 11],[517.0, -3, ',', 11],[558.0, -1, ',', 11],[579.0, -3, ',', 11],[618.0, 1200, 'K', 12],[629.0, 0.53, ',', 12],[649.0, 8.5, '%', 12]

(PV)
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396361, 396364)
 This work presents a theoretical study regarding photovoltaic (PV) thermoelectric (TE) applications of ScAgC.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 0, 'to', 5],[258.0, 10, 'eV', 5],[389.0, 8.5, 'eV', 7],[393.0, 300, 'K', 8],[419.0, 33, '%', 8],[472.0, 1200, 'K', 10],[489.0, -3, ',', 10],[530.0, -1, ',', 10],[551.0, -3, ',', 10],[590.0, 1200, 'K', 11],[601.0, 0.53, ',', 11],[621.0, 8.5, '%', 11]

ScAgC
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396379, 396381)
 This work presents a theoretical study regarding photovoltaic (PV) thermoelectric (TE) applications of ScAgC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0, 'to', 5],[241.0, 10, 'eV', 5],[372.0, 8.5, 'eV', 7],[376.0, 300, 'K', 8],[402.0, 33, '%', 8],[455.0, 1200, 'K', 10],[472.0, -3, ',', 10],[513.0, -1, ',', 10],[534.0, -3, ',', 10],[573.0, 1200, 'K', 11],[584.0, 0.53, ',', 11],[604.0, 8.5, '%', 11]

V
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396443, 396443)
 DFT calculates a direct band-gap of sim0.47e<missing VAR>V, while G<missing VAR>0W0 method estimates a band-gap of sim1.01 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 0, 'to', 3],[179.0, 10, 'eV', 3],[310.0, 8.5, 'eV', 5],[314.0, 300, 'K', 6],[340.0, 33, '%', 6],[393.0, 1200, 'K', 8],[410.0, -3, ',', 8],[451.0, -1, ',', 8],[472.0, -3, ',', 8],[511.0, 1200, 'K', 9],[522.0, 0.53, ',', 9],[542.0, 8.5, '%', 9]

W0
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396450, 396451)
 DFT calculates a direct band-gap of sim0.47e<missing VAR>V, while G<missing VAR>0W0 method estimates a band-gap of sim1.01 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 0, 'to', 3],[171.0, 10, 'eV', 3],[302.0, 8.5, 'eV', 5],[306.0, 300, 'K', 6],[332.0, 33, '%', 6],[385.0, 1200, 'K', 8],[402.0, -3, ',', 8],[443.0, -1, ',', 8],[464.0, -3, ',', 8],[503.0, 1200, 'K', 9],[514.0, 0.53, ',', 9],[534.0, 8.5, '%', 9]

V
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396469, 396469)
 DFT calculates a direct band-gap of sim0.47e<missing VAR>V, while G<missing VAR>0W0 method estimates a band-gap of sim1.01 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0, 'to', 3],[153.0, 10, 'eV', 3],[284.0, 8.5, 'eV', 5],[288.0, 300, 'K', 6],[314.0, 33, '%', 6],[367.0, 1200, 'K', 8],[384.0, -3, ',', 8],[425.0, -1, ',', 8],[446.0, -3, ',', 8],[485.0, 1200, 'K', 9],[496.0, 0.53, ',', 9],[516.0, 8.5, '%', 9]

B1
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396499, 396500)
 We usedparabola fitting to estimate effective mass (m) values for bands B1-B4 atGamma-point, which are sim -0.087 (-0.075), sim -0.17 (-0.27), sim-0.17 (-0.27), and sim 0.049 (0.058) along the Gamma-X<missing VAR> (Gamma-L)direction, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0, 'to', 2],[122.0, 10, 'eV', 2],[253.0, 8.5, 'eV', 4],[257.0, 300, 'K', 5],[283.0, 33, '%', 5],[336.0, 1200, 'K', 7],[353.0, -3, ',', 7],[394.0, -1, ',', 7],[415.0, -3, ',', 7],[454.0, 1200, 'K', 8],[465.0, 0.53, ',', 8],[485.0, 8.5, '%', 8]

B4
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396502, 396503)
 We usedparabola fitting to estimate effective mass (m) values for bands B1-B4 atGamma-point, which are sim -0.087 (-0.075), sim -0.17 (-0.27), sim-0.17 (-0.27), and sim 0.049 (0.058) along the Gamma-X<missing VAR> (Gamma-L)direction, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 0, 'to', 2],[119.0, 10, 'eV', 2],[250.0, 8.5, 'eV', 4],[254.0, 300, 'K', 5],[280.0, 33, '%', 5],[333.0, 1200, 'K', 7],[350.0, -3, ',', 7],[391.0, -1, ',', 7],[412.0, -3, ',', 7],[451.0, 1200, 'K', 8],[462.0, 0.53, ',', 8],[482.0, 8.5, '%', 8]

V
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396709, 396709)
 The lowestcalculated value of reflectivity r<missing VAR>(omega) is sim0.24 at sim4.7 e<missing VAR>V, andthe highest calculated value of absorption coefficient alpha (omega ) issim1.7times 106 cm-1 at sim 8.5 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0, 'to', 2],[87.0, 10, 'eV', 2],[44.0, 8.5, 'eV', 0],[48.0, 300, 'K', 1],[74.0, 33, '%', 1],[127.0, 1200, 'K', 3],[144.0, -3, ',', 3],[185.0, -1, ',', 3],[206.0, -3, ',', 3],[245.0, 1200, 'K', 4],[256.0, 0.53, ',', 4],[276.0, 8.5, '%', 4]

At
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396756, 396756)
 At 300 K, we expect a maximumsolar efficiency (SLME) of sim33% at sim1 mu m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 0, 'to', 3],[134.0, 10, 'eV', 3],[3.0, 8.5, 'eV', 1],[1.0, 300, 'K', 0],[27.0, 33, '%', 0],[80.0, 1200, 'K', 2],[97.0, -3, ',', 2],[138.0, -1, ',', 2],[159.0, -3, ',', 2],[198.0, 1200, 'K', 3],[209.0, 0.53, ',', 3],[229.0, 8.5, '%', 3]

S
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396774, 396774)
 At 300 K, we expect a maximumsolar efficiency (SLME) of sim33% at sim1 mu m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0, 'to', 3],[152.0, 10, 'eV', 3],[21.0, 8.5, 'eV', 1],[17.0, 300, 'K', 0],[9.0, 33, '%', 0],[62.0, 1200, 'K', 2],[79.0, -3, ',', 2],[120.0, -1, ',', 2],[141.0, -3, ',', 2],[180.0, 1200, 'K', 3],[191.0, 0.53, ',', 3],[211.0, 8.5, '%', 3]

W
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396819, 396819)
 The lattice thermalconductivity kappaph shows maximum value of sim3.8 Wm<missing VAR>-1K-1 at1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 0, 'to', 4],[197.0, 10, 'eV', 4],[66.0, 8.5, 'eV', 2],[62.0, 300, 'K', 1],[36.0, 33, '%', 1],[17.0, 1200, 'K', 1],[34.0, -3, ',', 1],[75.0, -1, ',', 1],[96.0, -3, ',', 1],[135.0, 1200, 'K', 2],[146.0, 0.53, ',', 2],[166.0, 8.5, '%', 2]

K
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396823, 396823)
 The lattice thermalconductivity kappaph shows maximum value of sim3.8 Wm<missing VAR>-1K-1 at1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 0, 'to', 4],[201.0, 10, 'eV', 4],[70.0, 8.5, 'eV', 2],[66.0, 300, 'K', 1],[40.0, 33, '%', 1],[13.0, 1200, 'K', 1],[30.0, -3, ',', 1],[71.0, -1, ',', 1],[92.0, -3, ',', 1],[131.0, 1200, 'K', 2],[142.0, 0.53, ',', 2],[162.0, 8.5, '%', 2]

K
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396832, 396832)
 The lattice thermalconductivity kappaph shows maximum value of sim3.8 Wm<missing VAR>-1K-1 at1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0, 'to', 4],[210.0, 10, 'eV', 4],[79.0, 8.5, 'eV', 2],[75.0, 300, 'K', 1],[49.0, 33, '%', 1],[4.0, 1200, 'K', 1],[21.0, -3, ',', 1],[62.0, -1, ',', 1],[83.0, -3, ',', 1],[122.0, 1200, 'K', 2],[133.0, 0.53, ',', 2],[153.0, 8.5, '%', 2]

At
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396835, 396835)
 At 1200 K, for electron doping of sim3.9times1021cm-3,the maximum value of S2sigma /tau is sim145 times 1014 muWK-2cm-1s<missing VAR>-1, while for hole doping ofsim1.5times1021cm-3, it is sim123 times 1014 muWK-2cm-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0, 'to', 5],[213.0, 10, 'eV', 5],[82.0, 8.5, 'eV', 3],[78.0, 300, 'K', 2],[52.0, 33, '%', 2],[1.0, 1200, 'K', 0],[18.0, -3, ',', 0],[59.0, -1, ',', 0],[80.0, -3, ',', 0],[119.0, 1200, 'K', 1],[130.0, 0.53, ',', 1],[150.0, 8.5, '%', 1]

S2
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396866, 396867)
 At 1200 K, for electron doping of sim3.9times1021cm-3,the maximum value of S2sigma /tau is sim145 times 1014 muWK-2cm-1s<missing VAR>-1, while for hole doping ofsim1.5times1021cm-3, it is sim123 times 1014 muWK-2cm-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 0, 'to', 5],[244.0, 10, 'eV', 5],[113.0, 8.5, 'eV', 3],[109.0, 300, 'K', 2],[83.0, 33, '%', 2],[30.0, 1200, 'K', 0],[13.0, -3, ',', 0],[27.0, -1, ',', 0],[48.0, -3, ',', 0],[87.0, 1200, 'K', 1],[98.0, 0.53, ',', 1],[118.0, 8.5, '%', 1]

WK
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396886, 396887)
 At 1200 K, for electron doping of sim3.9times1021cm-3,the maximum value of S2sigma /tau is sim145 times 1014 muWK-2cm-1s<missing VAR>-1, while for hole doping ofsim1.5times1021cm-3, it is sim123 times 1014 muWK-2cm-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 0, 'to', 5],[264.0, 10, 'eV', 5],[133.0, 8.5, 'eV', 3],[129.0, 300, 'K', 2],[103.0, 33, '%', 2],[50.0, 1200, 'K', 0],[33.0, -3, ',', 0],[7.0, -1, ',', 0],[28.0, -3, ',', 0],[67.0, 1200, 'K', 1],[78.0, 0.53, ',', 1],[98.0, 8.5, '%', 1]

WK
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(396934, 396935)
 At 1200 K, for electron doping of sim3.9times1021cm-3,the maximum value of S2sigma /tau is sim145 times 1014 muWK-2cm-1s<missing VAR>-1, while for hole doping ofsim1.5times1021cm-3, it is sim123 times 1014 muWK-2cm-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 0, 'to', 5],[312.0, 10, 'eV', 5],[181.0, 8.5, 'eV', 3],[177.0, 300, 'K', 2],[151.0, 33, '%', 2],[98.0, 1200, 'K', 0],[81.0, -3, ',', 0],[40.0, -1, ',', 0],[19.0, -3, ',', 0],[19.0, 1200, 'K', 1],[30.0, 0.53, ',', 1],[50.0, 8.5, '%', 1]

K
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(397007, 397007)
 The highest ZT at 1200 K is expected to be sim0.53,whereas the optimal %efficiency is predicted as sim8.5% for cold (hot)temperatures of 300 (1200) K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 0, 'to', 6],[385.0, 10, 'eV', 6],[254.0, 8.5, 'eV', 4],[250.0, 300, 'K', 3],[224.0, 33, '%', 3],[171.0, 1200, 'K', 1],[154.0, -3, ',', 1],[113.0, -1, ',', 1],[92.0, -3, ',', 1],[53.0, 1200, 'K', 0],[42.0, 0.53, ',', 0],[22.0, 8.5, '%', 0]

ScAgC
###First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound|Vinod Kumar Solet,Shamim Sk,Sudhir K. Pandey###
(397018, 397020)
 The results suggest that ScAgC can be a potentialcandidate for solar cell and TE applications.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 0, 'to', 7],[396.0, 10, 'eV', 7],[265.0, 8.5, 'eV', 5],[261.0, 300, 'K', 4],[235.0, 33, '%', 4],[182.0, 1200, 'K', 2],[165.0, -3, ',', 2],[124.0, -1, ',', 2],[103.0, -3, ',', 2],[64.0, 1200, 'K', 1],[53.0, 0.53, ',', 1],[33.0, 8.5, '%', 1]

SC
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397213, 397214)
 One of the methods to studythe trap density is space charge limited current (SCL<missing VAR>C) analysis.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397216, 397216)
 One of the methods to studythe trap density is space charge limited current (SCL<missing VAR>C) analysis.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397332, 397332)
 One of the challenges in these structures is using organicpolymers like Spiro-OMeTAD, PEDOT<missing VAR> PSS, and PT<missing VAR>AA as hole transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397339, 397339)
 One of the challenges in these structures is using organicpolymers like Spiro-OMeTAD, PEDOT<missing VAR> PSS, and PT<missing VAR>AA as hole transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397342, 397342)
 One of the challenges in these structures is using organicpolymers like Spiro-OMeTAD, PEDOT<missing VAR> PSS, and PT<missing VAR>AA as hole transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSS
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397345, 397347)
 One of the challenges in these structures is using organicpolymers like Spiro-OMeTAD, PEDOT<missing VAR> PSS, and PT<missing VAR>AA as hole transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397352, 397352)
 One of the challenges in these structures is using organicpolymers like Spiro-OMeTAD, PEDOT<missing VAR> PSS, and PT<missing VAR>AA as hole transport layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397411, 397411)
 In this work, a hole-only devicestructure is explained, made based on inorganic materials, which possesses highstability, a simple preparation method, and reasonable cost compared toconventional hole-only device structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397503, 397503)
 This structure is built by coating ananostructured NiOx layer, perovskite, CIS, and Au on the IT<missing VAR>O substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397512, 397514)
 This structure is built by coating ananostructured NiOx layer, perovskite, CIS, and Au on the IT<missing VAR>O substrate.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397519, 397519)
 This structure is built by coating ananostructured NiOx layer, perovskite, CIS, and Au on the IT<missing VAR>O substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397525, 397525)
 This structure is built by coating ananostructured NiOx layer, perovskite, CIS, and Au on the IT<missing VAR>O substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###A simple all-inorganic hole-only device structure for monitoring the trap densities in perovskite solar cells|Atena Mohamadnezhad,Mahmoud Samadpour###
(397527, 397527)
 This structure is built by coating ananostructured NiOx layer, perovskite, CIS, and Au on the IT<missing VAR>O substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Molecular Electronics by Chemical Modification of Semiconductor Surfaces|Ayelet Vilan,David Cahen###
(397836, 397836)
 This topic also has directimportance for technology as it can help improve the efficiency of a variety ofelectronic devices such as solar cells, LEDs, sensors and possible futurebioelectronic devices, which are based mostly on non-classical semiconductingmaterials (section 1).
EXCEPTION 3: IndexError for Ds
[304.0, 7, 'provides', 4],[338.0, 8, 'concludes', 4],[393.0, 1, ',', 6]

In
###Achieving balanced open circuit voltage and short circuit current by tuning the interfacial energetics in organic bulk heterojunction solar cells: A drift-diffusion simulation|Wenchao Yang###
(398373, 398373)
 In organic bulk heterojunction solar cells, the donor/acceptor interfacialenergy offset (Delta E) is found to provide the driving force for efficientcharge separation which gives rise to high short circuit current density(J<missing VAR>mathrmsc), but a high Delta E<missing VAR> inevitably undermines the open circuitvoltage (Vmathrmoc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[467.0, 0.2, ',', 3],[519.0, 0.2, ',', 4]

V
###Achieving balanced open circuit voltage and short circuit current by tuning the interfacial energetics in organic bulk heterojunction solar cells: A drift-diffusion simulation|Wenchao Yang###
(398478, 398478)
 In organic bulk heterojunction solar cells, the donor/acceptor interfacialenergy offset (Delta E) is found to provide the driving force for efficientcharge separation which gives rise to high short circuit current density(J<missing VAR>mathrmsc), but a high Delta E<missing VAR> inevitably undermines the open circuitvoltage (Vmathrmoc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 0.2, ',', 3],[414.0, 0.2, ',', 4]

In
###Achieving balanced open circuit voltage and short circuit current by tuning the interfacial energetics in organic bulk heterojunction solar cells: A drift-diffusion simulation|Wenchao Yang###
(398484, 398484)
 In this paper, employing the device model method wecalculated the steady state current density-voltage (J<missing VAR>-V) and theJ<missing VAR>mathrmsc-Delta E<missing VAR> curves under two different charge separationmechanisms to investigate the optimum driving force required for achievingsizable Vmathrmoc and J<missing VAR>mathrmsc simultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 0.2, ',', 2],[408.0, 0.2, ',', 3]

V
###Achieving balanced open circuit voltage and short circuit current by tuning the interfacial energetics in organic bulk heterojunction solar cells: A drift-diffusion simulation|Wenchao Yang###
(398521, 398521)
 In this paper, employing the device model method wecalculated the steady state current density-voltage (J<missing VAR>-V) and theJ<missing VAR>mathrmsc-Delta E<missing VAR> curves under two different charge separationmechanisms to investigate the optimum driving force required for achievingsizable Vmathrmoc and J<missing VAR>mathrmsc simultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 0.2, ',', 2],[371.0, 0.2, ',', 3]

V
###Achieving balanced open circuit voltage and short circuit current by tuning the interfacial energetics in organic bulk heterojunction solar cells: A drift-diffusion simulation|Wenchao Yang###
(398573, 398573)
 In this paper, employing the device model method wecalculated the steady state current density-voltage (J<missing VAR>-V) and theJ<missing VAR>mathrmsc-Delta E<missing VAR> curves under two different charge separationmechanisms to investigate the optimum driving force required for achievingsizable Vmathrmoc and J<missing VAR>mathrmsc simultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 0.2, ',', 2],[319.0, 0.2, ',', 3]

V
###Achieving balanced open circuit voltage and short circuit current by tuning the interfacial energetics in organic bulk heterojunction solar cells: A drift-diffusion simulation|Wenchao Yang###
(398629, 398629)
 Under the Marcuscharge transfer mechanism, with the increased Delta E<missing VAR> the Jsc increasesrapidly for Delta E<missing VAR>leq 0.2 e<missing VAR>V, and then maintains a nearly constant valuebefore decreasing at the Marcus inverted region, which is due to theaccumulation of undissociated excitons within their lifetime and is beneficialfor obtaining a sizable J<missing VAR>mathrmsc under a Delta E<missing VAR> much smaller thanthe reorganization energy lambda.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0.2, ',', 1],[263.0, 0.2, ',', 2]

V
###Achieving balanced open circuit voltage and short circuit current by tuning the interfacial energetics in organic bulk heterojunction solar cells: A drift-diffusion simulation|Wenchao Yang###
(398843, 398843)
 For the coherent charge transfer mechanismin which the driving force act as the energy window of accessible chargeseparated states, with two typical types of density of states for the chargetransfer excitons, it is shown that the highest J<missing VAR>mathrmsc can also beachieved under a small Delta E<missing VAR> of 0.2,e<missing VAR>V if the high-lying delocalizedstates are harvested in high proportion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.2, ',', 0],[49.0, 0.2, ',', 1]

V
###Achieving balanced open circuit voltage and short circuit current by tuning the interfacial energetics in organic bulk heterojunction solar cells: A drift-diffusion simulation|Wenchao Yang###
(398895, 398895)
 This work demonstrates the existenceof the optimum driving force of 0.2,e<missing VAR>V and provides some guidelines forengineering the interfacial energetics to achieve the high balancedJ<missing VAR>mathrmsc and Vmathrmoc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0.2, ',', 1],[3.0, 0.2, ',', 0]

V
###Achieving balanced open circuit voltage and short circuit current by tuning the interfacial energetics in organic bulk heterojunction solar cells: A drift-diffusion simulation|Wenchao Yang###
(398933, 398933)
 This work demonstrates the existenceof the optimum driving force of 0.2,e<missing VAR>V and provides some guidelines forengineering the interfacial energetics to achieve the high balancedJ<missing VAR>mathrmsc and Vmathrmoc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.2, ',', 1],[41.0, 0.2, ',', 0]

I
###Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules|Muhammad Usman###
(399419, 399419)
 This mimics a transformation from a type-I bandstructure to a type-II band structure for the QDMs, which is a criticalrequirement for the design of intermediate-band solar cells (IBSC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 1, 'KV', 2]

II
###Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules|Muhammad Usman###
(399432, 399433)
 This mimics a transformation from a type-I bandstructure to a type-II band structure for the QDMs, which is a criticalrequirement for the design of intermediate-band solar cells (IBSC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1, 'KV', 2]

(IBSC)
###Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules|Muhammad Usman###
(399475, 399480)
 This mimics a transformation from a type-I bandstructure to a type-II band structure for the QDMs, which is a criticalrequirement for the design of intermediate-band solar cells (IBSC).
Featurization successful!
0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1, 'KV', 2]

SS
###MinXSS-1 CubeSat On-Orbit Pointing and Power Performance: The First Flight of the Blue Canyon Technologies XACT 3-axis Attitude Determination and Control System|James Paul Mason,Matt Baumgart,Bryan Rogler,Chloe Downs,Margaret Williams,Thomas N. Woods,Scott Palo,Phillip C. Chamberlin,Stanley Solomon,Andrew Jones,Xinlin Li,Rick Kohnert,Amir Caspi###
(399610, 399611)
MinX<missing VAR>SS-1 CubeSat On-Orbit Pointing and Power Performance The First Flight of the Blue Canyon Technologies X<missing VAR>ACT<missing VAR> 3-axis Attitude Determination and Control System.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 3, 'Unit', 1],[148.0, 2016, 'May', 2],[301.0, 42, ',', 5],[316.0, 190, 'km', 5],[319.0, 410, 'km', 5],[431.0, 185, 'km', 7],[552.0, 400, 'km', 11],[670.0, 30, '%', 14],[682.0, 8, 'W', 14],[698.0, 65, '%', 14]

C
###MinXSS-1 CubeSat On-Orbit Pointing and Power Performance: The First Flight of the Blue Canyon Technologies XACT 3-axis Attitude Determination and Control System|James Paul Mason,Matt Baumgart,Bryan Rogler,Chloe Downs,Margaret Williams,Thomas N. Woods,Scott Palo,Phillip C. Chamberlin,Stanley Solomon,Andrew Jones,Xinlin Li,Rick Kohnert,Amir Caspi###
(399648, 399648)
MinX<missing VAR>SS-1 CubeSat On-Orbit Pointing and Power Performance The First Flight of the Blue Canyon Technologies X<missing VAR>ACT<missing VAR> 3-axis Attitude Determination and Control System.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'Unit', 1],[111.0, 2016, 'May', 2],[264.0, 42, ',', 5],[279.0, 190, 'km', 5],[282.0, 410, 'km', 5],[394.0, 185, 'km', 7],[515.0, 400, 'km', 11],[633.0, 30, '%', 14],[645.0, 8, 'W', 14],[661.0, 65, '%', 14]

S
###MinXSS-1 CubeSat On-Orbit Pointing and Power Performance: The First Flight of the Blue Canyon Technologies XACT 3-axis Attitude Determination and Control System|James Paul Mason,Matt Baumgart,Bryan Rogler,Chloe Downs,Margaret Williams,Thomas N. Woods,Scott Palo,Phillip C. Chamberlin,Stanley Solomon,Andrew Jones,Xinlin Li,Rick Kohnert,Amir Caspi###
(399682, 399682)
 The Miniature X<missing VAR>-ray Solar Spectrometer (MinX<missing VAR>SS) is a 3 Unit (3U) CubeSatdesigned for a 3-month mission to study solar soft X<missing VAR>-ray spectral irradiance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3, 'Unit', 0],[77.0, 2016, 'May', 1],[230.0, 42, ',', 4],[245.0, 190, 'km', 4],[248.0, 410, 'km', 4],[360.0, 185, 'km', 6],[481.0, 400, 'km', 10],[599.0, 30, '%', 13],[611.0, 8, 'W', 13],[627.0, 65, '%', 13]

U
###MinXSS-1 CubeSat On-Orbit Pointing and Power Performance: The First Flight of the Blue Canyon Technologies XACT 3-axis Attitude Determination and Control System|James Paul Mason,Matt Baumgart,Bryan Rogler,Chloe Downs,Margaret Williams,Thomas N. Woods,Scott Palo,Phillip C. Chamberlin,Stanley Solomon,Andrew Jones,Xinlin Li,Rick Kohnert,Amir Caspi###
(399692, 399692)
 The Miniature X<missing VAR>-ray Solar Spectrometer (MinX<missing VAR>SS) is a 3 Unit (3U) CubeSatdesigned for a 3-month mission to study solar soft X<missing VAR>-ray spectral irradiance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 3, 'Unit', 0],[67.0, 2016, 'May', 1],[220.0, 42, ',', 4],[235.0, 190, 'km', 4],[238.0, 410, 'km', 4],[350.0, 185, 'km', 6],[471.0, 400, 'km', 10],[589.0, 30, '%', 13],[601.0, 8, 'W', 13],[617.0, 65, '%', 13]

C
###MinXSS-1 CubeSat On-Orbit Pointing and Power Performance: The First Flight of the Blue Canyon Technologies XACT 3-axis Attitude Determination and Control System|James Paul Mason,Matt Baumgart,Bryan Rogler,Chloe Downs,Margaret Williams,Thomas N. Woods,Scott Palo,Phillip C. Chamberlin,Stanley Solomon,Andrew Jones,Xinlin Li,Rick Kohnert,Amir Caspi###
(399803, 399803)
This was the first flight of the Blue Canyon Technologies X<missing VAR>ACT<missing VAR> 3-axis attitudedetermination and control system -- a commercially available, high-precisionpointing system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 3, 'Unit', 2],[44.0, 2016, 'May', 1],[109.0, 42, ',', 2],[124.0, 190, 'km', 2],[127.0, 410, 'km', 2],[239.0, 185, 'km', 4],[360.0, 400, 'km', 8],[478.0, 30, '%', 11],[490.0, 8, 'W', 11],[506.0, 65, '%', 11]

PS
###MinXSS-1 CubeSat On-Orbit Pointing and Power Performance: The First Flight of the Blue Canyon Technologies XACT 3-axis Attitude Determination and Control System|James Paul Mason,Matt Baumgart,Bryan Rogler,Chloe Downs,Margaret Williams,Thomas N. Woods,Scott Palo,Phillip C. Chamberlin,Stanley Solomon,Andrew Jones,Xinlin Li,Rick Kohnert,Amir Caspi###
(400119, 400120)
 Without a G<missing VAR>PS receiver, it was necessary to periodically uploadephemeris information to update the orbit propagation model and maintainpointing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 3, 'Unit', 9],[360.0, 2016, 'May', 8],[207.0, 42, ',', 5],[192.0, 190, 'km', 5],[189.0, 410, 'km', 5],[77.0, 185, 'km', 3],[43.0, 400, 'km', 1],[161.0, 30, '%', 4],[173.0, 8, 'W', 4],[189.0, 65, '%', 4]

At
###MinXSS-1 CubeSat On-Orbit Pointing and Power Performance: The First Flight of the Blue Canyon Technologies XACT 3-axis Attitude Determination and Control System|James Paul Mason,Matt Baumgart,Bryan Rogler,Chloe Downs,Margaret Williams,Thomas N. Woods,Scott Palo,Phillip C. Chamberlin,Stanley Solomon,Andrew Jones,Xinlin Li,Rick Kohnert,Amir Caspi###
(400162, 400162)
 At 400 km, these uploads were required once every other week.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 3, 'Unit', 10],[403.0, 2016, 'May', 9],[250.0, 42, ',', 6],[235.0, 190, 'km', 6],[232.0, 410, 'km', 6],[120.0, 185, 'km', 4],[1.0, 400, 'km', 0],[119.0, 30, '%', 3],[131.0, 8, 'W', 3],[147.0, 65, '%', 3]

At
###MinXSS-1 CubeSat On-Orbit Pointing and Power Performance: The First Flight of the Blue Canyon Technologies XACT 3-axis Attitude Determination and Control System|James Paul Mason,Matt Baumgart,Bryan Rogler,Chloe Downs,Margaret Williams,Thomas N. Woods,Scott Palo,Phillip C. Chamberlin,Stanley Solomon,Andrew Jones,Xinlin Li,Rick Kohnert,Amir Caspi###
(400183, 400183)
 Atsim270 km, they were required every day.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[495.0, 3, 'Unit', 11],[424.0, 2016, 'May', 10],[271.0, 42, ',', 7],[256.0, 190, 'km', 7],[253.0, 410, 'km', 7],[141.0, 185, 'km', 5],[20.0, 400, 'km', 1],[98.0, 30, '%', 2],[110.0, 8, 'W', 2],[126.0, 65, '%', 2]

In
###Strain engineering for ultra-coherent nanomechanical oscillators|Amir H. Ghadimi,Sergey A. Fedorov,Nils J. Engelsen,Mohammad J. Bereyhi,Ryan Schilling,Dalziel J. Wilson,Tobias J. Kippenberg###
(400439, 400439)
 In the context of nanomechanics, the pursuit of resonators withultra-high coherence has led to intense study of a complementary strainengineering technique, dissipation dilution, whereby the stiffness of amaterial is effectively increased without added loss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[511.0, 2, 'D', 8]

Si3N4
###Strain engineering for ultra-coherent nanomechanical oscillators|Amir H. Ghadimi,Sergey A. Fedorov,Nils J. Engelsen,Mohammad J. Bereyhi,Ryan Schilling,Dalziel J. Wilson,Tobias J. Kippenberg###
(400547, 400550)
 Dissipation dilution isknown to underlie the anomalously high Q<missing VAR> factor of Si3N4 nanomechanicalresonators, including recently-developed soft-clamped resonators; however,the paradigm has to date relied on weak strain produced during materialsynthesis.
Featurization terminated normally.
0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 2, 'D', 7]

Si3N4
###Strain engineering for ultra-coherent nanomechanical oscillators|Amir H. Ghadimi,Sergey A. Fedorov,Nils J. Engelsen,Mohammad J. Bereyhi,Ryan Schilling,Dalziel J. Wilson,Tobias J. Kippenberg###
(400733, 400736)
Specifically, using a spatially non-uniform phononic crystal pattern, wecolocalize the strain and flexural motion of a Si3N4 nanobeam, whileincreasing the former to near the yield strength.
Featurization terminated normally.
0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 2, 'D', 4]

N
###Strain engineering for ultra-coherent nanomechanical oscillators|Amir H. Ghadimi,Sergey A. Fedorov,Nils J. Engelsen,Mohammad J. Bereyhi,Ryan Schilling,Dalziel J. Wilson,Tobias J. Kippenberg###
(400838, 400838)
 The devices we study can have force sensitivities of aN/rtHz, performhundreds of quantum coherent oscillations at room temperature, and attain Q<missing VAR> >400 million at radio frequencies.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 2, 'D', 2]

O
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401054, 401054)
 Understanding the type, formation energy and capture cross section of defectsis one of the challenges in the field of organometallic halide perovskite(OM<missing VAR>HP) devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 1.05, 'eV', 5],[249.0, 1.9, 'eV', 5]

P
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401057, 401057)
 Understanding the type, formation energy and capture cross section of defectsis one of the challenges in the field of organometallic halide perovskite(OM<missing VAR>HP) devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 1.05, 'eV', 5],[246.0, 1.9, 'eV', 5]

O
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401088, 401088)
 Currently, such understanding is limited, restricting the powerconversion efficiencies of OM<missing VAR>HPs solar cells from reaching their ShockleyQueisser limit.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 1.05, 'eV', 4],[215.0, 1.9, 'eV', 4]

H
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401090, 401090)
 Currently, such understanding is limited, restricting the powerconversion efficiencies of OM<missing VAR>HPs solar cells from reaching their ShockleyQueisser limit.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 1.05, 'eV', 4],[213.0, 1.9, 'eV', 4]

B
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401167, 401167)
 Here, we report on deep level (DL) defects and their effect onfree charge transport properties of single crystalline methylammonium leadbromide perovskite (M<missing VAR>APB).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 1.05, 'eV', 3],[136.0, 1.9, 'eV', 3]

In
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401171, 401171)
 In order to determine DL activation energy andcapture cross section we used photo-Hall effect spectroscopy (PHE<missing VAR>S) withenhanced illumination in both steady-state and dynamic regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 1.05, 'eV', 2],[132.0, 1.9, 'eV', 2]

PH
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401208, 401209)
 In order to determine DL activation energy andcapture cross section we used photo-Hall effect spectroscopy (PHE<missing VAR>S) withenhanced illumination in both steady-state and dynamic regimes.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1.05, 'eV', 2],[94.0, 1.9, 'eV', 2]

S
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401211, 401211)
 In order to determine DL activation energy andcapture cross section we used photo-Hall effect spectroscopy (PHE<missing VAR>S) withenhanced illumination in both steady-state and dynamic regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.05, 'eV', 2],[92.0, 1.9, 'eV', 2]

V
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401299, 401299)
 D<missing VAR>Ls with activation energies of 1.05 eV,1.5 e<missing VAR>V, and 1.9 eV above valence band were detected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 1.05, 'eV', 0],[4.0, 1.9, 'eV', 0]

PB
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401406, 401407)
Additionally, the transport properties of M<missing VAR>APB single crystal is measured byTime of Flight (ToF) at several biases.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 1.05, 'eV', 3],[103.0, 1.9, 'eV', 3]

F
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401428, 401428)
Additionally, the transport properties of M<missing VAR>APB single crystal is measured byTime of Flight (ToF) at several biases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1.05, 'eV', 3],[125.0, 1.9, 'eV', 3]

F
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401445, 401445)
 The analysis of ToF measurement furtherconfirms increase of Hall mobility and the enhancement of hole transportproduced by sub-bandgap illumination in M<missing VAR>APB devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 1.05, 'eV', 4],[142.0, 1.9, 'eV', 4]

PB
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401489, 401490)
 The analysis of ToF measurement furtherconfirms increase of Hall mobility and the enhancement of hole transportproduced by sub-bandgap illumination in M<missing VAR>APB devices.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 1.05, 'eV', 4],[186.0, 1.9, 'eV', 4]

O
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401516, 401516)
 Our studies provide astrong evidence on deep levels in OM<missing VAR>HPs and opens a richer picture of the roleand properties of deep levels in M<missing VAR>APB single crystals as a system model for thefirst time.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 1.05, 'eV', 5],[213.0, 1.9, 'eV', 5]

H
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401518, 401518)
 Our studies provide astrong evidence on deep levels in OM<missing VAR>HPs and opens a richer picture of the roleand properties of deep levels in M<missing VAR>APB single crystals as a system model for thefirst time.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 1.05, 'eV', 5],[215.0, 1.9, 'eV', 5]

PB
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401552, 401553)
 Our studies provide astrong evidence on deep levels in OM<missing VAR>HPs and opens a richer picture of the roleand properties of deep levels in M<missing VAR>APB single crystals as a system model for thefirst time.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 1.05, 'eV', 5],[249.0, 1.9, 'eV', 5]

O
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401593, 401593)
 The deeper knowledge of the electrical structure of OM<missing VAR>HP could openfurther opportunities in the development of more feasible technology.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 1.05, 'eV', 6],[290.0, 1.9, 'eV', 6]

HP
###Deep Levels and Mixed Conductivity in Organometallic Halide Perovskites|Artem Musiienko,Pavel Moravec,Roman Grill,Petr Praus,Igor Vasylchenko,Jakub Pekarek,Jeremy Tisdale,Katarina Ridzonova,Eduard Belas,Lucie Abelova,Bin Hu,Eric Lukosi,Mahshid Ahmadi###
(401595, 401596)
 The deeper knowledge of the electrical structure of OM<missing VAR>HP could openfurther opportunities in the development of more feasible technology.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 1.05, 'eV', 6],[292.0, 1.9, 'eV', 6]

MoS2
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401630, 401632)
MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 20, '%', 0],[431.0, 1.4, 'eV', 6],[442.0, 3.2, 'for', 6],[468.0, -4.3, 'eV', 6],[478.0, -2.2, 'eV', 6],[514.0, -4, 'eV', 6],[738.0, 20.12, '%', 8],[751.0, 18.8, '%', 8]

CH3NH3PbI3
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401652, 401660)
MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%.
Featurization terminated normally.
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 20, '%', 0],[403.0, 1.4, 'eV', 6],[414.0, 3.2, 'for', 6],[440.0, -4.3, 'eV', 6],[450.0, -2.2, 'eV', 6],[486.0, -4, 'eV', 6],[710.0, 20.12, '%', 8],[723.0, 18.8, '%', 8]

(PSCs)
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401697, 401701)
 Interface engineering of organic-inorganic halide perovskite solar cells(PSCs) plays a pivotal role in achieving high power conversion efficiency(PCE).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 20, '%', 1],[362.0, 1.4, 'eV', 5],[373.0, 3.2, 'for', 5],[399.0, -4.3, 'eV', 5],[409.0, -2.2, 'eV', 5],[445.0, -4, 'eV', 5],[669.0, 20.12, '%', 7],[682.0, 18.8, '%', 7]

PC
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401725, 401726)
 Interface engineering of organic-inorganic halide perovskite solar cells(PSCs) plays a pivotal role in achieving high power conversion efficiency(PCE).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 20, '%', 1],[337.0, 1.4, 'eV', 5],[348.0, 3.2, 'for', 5],[374.0, -4.3, 'eV', 5],[384.0, -2.2, 'eV', 5],[420.0, -4, 'eV', 5],[644.0, 20.12, '%', 7],[657.0, 18.8, '%', 7]

PSCs
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401772, 401774)
 Graphene and related two-dimensional materials (GRMs) are promisingcandidates to tune on demand the interface properties of PSCs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 20, '%', 2],[289.0, 1.4, 'eV', 4],[300.0, 3.2, 'for', 4],[326.0, -4.3, 'eV', 4],[336.0, -2.2, 'eV', 4],[372.0, -4, 'eV', 4],[596.0, 20.12, '%', 6],[609.0, 18.8, '%', 6]

In
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401777, 401777)
 In this work, wefully exploit the potential of GRMs by controlling the optoelectronicproperties of hybrids between molybdenum disulfide (MoS2) and reduced grapheneoxide (RGO) as hole transport layer (HTL) and active buffer layer (ABL) inmesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (M<missing VAR>APbI3)-basedPSC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 20, '%', 3],[286.0, 1.4, 'eV', 3],[297.0, 3.2, 'for', 3],[323.0, -4.3, 'eV', 3],[333.0, -2.2, 'eV', 3],[369.0, -4, 'eV', 3],[593.0, 20.12, '%', 5],[606.0, 18.8, '%', 5]

(MoS2)
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401822, 401826)
 In this work, wefully exploit the potential of GRMs by controlling the optoelectronicproperties of hybrids between molybdenum disulfide (MoS2) and reduced grapheneoxide (RGO) as hole transport layer (HTL) and active buffer layer (ABL) inmesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (M<missing VAR>APbI3)-basedPSC.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 20, '%', 3],[237.0, 1.4, 'eV', 3],[248.0, 3.2, 'for', 3],[274.0, -4.3, 'eV', 3],[284.0, -2.2, 'eV', 3],[320.0, -4, 'eV', 3],[544.0, 20.12, '%', 5],[557.0, 18.8, '%', 5]

O
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401840, 401840)
 In this work, wefully exploit the potential of GRMs by controlling the optoelectronicproperties of hybrids between molybdenum disulfide (MoS2) and reduced grapheneoxide (RGO) as hole transport layer (HTL) and active buffer layer (ABL) inmesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (M<missing VAR>APbI3)-basedPSC.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 20, '%', 3],[223.0, 1.4, 'eV', 3],[234.0, 3.2, 'for', 3],[260.0, -4.3, 'eV', 3],[270.0, -2.2, 'eV', 3],[306.0, -4, 'eV', 3],[530.0, 20.12, '%', 5],[543.0, 18.8, '%', 5]

H
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401852, 401852)
 In this work, wefully exploit the potential of GRMs by controlling the optoelectronicproperties of hybrids between molybdenum disulfide (MoS2) and reduced grapheneoxide (RGO) as hole transport layer (HTL) and active buffer layer (ABL) inmesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (M<missing VAR>APbI3)-basedPSC.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 20, '%', 3],[211.0, 1.4, 'eV', 3],[222.0, 3.2, 'for', 3],[248.0, -4.3, 'eV', 3],[258.0, -2.2, 'eV', 3],[294.0, -4, 'eV', 3],[518.0, 20.12, '%', 5],[531.0, 18.8, '%', 5]

B
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401867, 401867)
 In this work, wefully exploit the potential of GRMs by controlling the optoelectronicproperties of hybrids between molybdenum disulfide (MoS2) and reduced grapheneoxide (RGO) as hole transport layer (HTL) and active buffer layer (ABL) inmesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (M<missing VAR>APbI3)-basedPSC.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 20, '%', 3],[196.0, 1.4, 'eV', 3],[207.0, 3.2, 'for', 3],[233.0, -4.3, 'eV', 3],[243.0, -2.2, 'eV', 3],[279.0, -4, 'eV', 3],[503.0, 20.12, '%', 5],[516.0, 18.8, '%', 5]

(CH3NH3PbI3)
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401882, 401892)
 In this work, wefully exploit the potential of GRMs by controlling the optoelectronicproperties of hybrids between molybdenum disulfide (MoS2) and reduced grapheneoxide (RGO) as hole transport layer (HTL) and active buffer layer (ABL) inmesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (M<missing VAR>APbI3)-basedPSC.
Featurization successful!
0.5,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 20, '%', 3],[171.0, 1.4, 'eV', 3],[182.0, 3.2, 'for', 3],[208.0, -4.3, 'eV', 3],[218.0, -2.2, 'eV', 3],[254.0, -4, 'eV', 3],[478.0, 20.12, '%', 5],[491.0, 18.8, '%', 5]

I3
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401900, 401901)
 In this work, wefully exploit the potential of GRMs by controlling the optoelectronicproperties of hybrids between molybdenum disulfide (MoS2) and reduced grapheneoxide (RGO) as hole transport layer (HTL) and active buffer layer (ABL) inmesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (M<missing VAR>APbI3)-basedPSC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 20, '%', 3],[162.0, 1.4, 'eV', 3],[173.0, 3.2, 'for', 3],[199.0, -4.3, 'eV', 3],[209.0, -2.2, 'eV', 3],[245.0, -4, 'eV', 3],[469.0, 20.12, '%', 5],[482.0, 18.8, '%', 5]

PSC
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401907, 401909)
 In this work, wefully exploit the potential of GRMs by controlling the optoelectronicproperties of hybrids between molybdenum disulfide (MoS2) and reduced grapheneoxide (RGO) as hole transport layer (HTL) and active buffer layer (ABL) inmesoscopic methylammonium lead iodide (CH3NH3PbI3) perovskite (M<missing VAR>APbI3)-basedPSC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 20, '%', 3],[154.0, 1.4, 'eV', 3],[165.0, 3.2, 'for', 3],[191.0, -4.3, 'eV', 3],[201.0, -2.2, 'eV', 3],[237.0, -4, 'eV', 3],[461.0, 20.12, '%', 5],[474.0, 18.8, '%', 5]

MoS2
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401922, 401924)
 We show that zero-dimensional MoS2 quantum dots (MoS2 Q<missing VAR>Ds), derived byliquid phase exfoliated MoS2 flakes, provide both hole-extraction andelectron-blocking properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 20, '%', 4],[139.0, 1.4, 'eV', 2],[150.0, 3.2, 'for', 2],[176.0, -4.3, 'eV', 2],[186.0, -2.2, 'eV', 2],[222.0, -4, 'eV', 2],[446.0, 20.12, '%', 4],[459.0, 18.8, '%', 4]

MoS2
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401931, 401933)
 We show that zero-dimensional MoS2 quantum dots (MoS2 Q<missing VAR>Ds), derived byliquid phase exfoliated MoS2 flakes, provide both hole-extraction andelectron-blocking properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 20, '%', 4],[130.0, 1.4, 'eV', 2],[141.0, 3.2, 'for', 2],[167.0, -4.3, 'eV', 2],[177.0, -2.2, 'eV', 2],[213.0, -4, 'eV', 2],[437.0, 20.12, '%', 4],[450.0, 18.8, '%', 4]

Ds
###MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of CH3NH3PbI3 Perovskite Solar Cell with Efficiency over 20%|Leyla Najafi,Babak Taheri,Beatriz Martin-Garcia,Sebastiano Bellani,Diego Di Girolamo,Antonio Agresti,Reinier Oropesa-Nunez,Sara Pescetelli,Luigi Vesce,Emanuele Calabro,Mirko Prato,Antonio E. Del Rio Castillo,Aldo Di Carlo,Francesco Bonaccorso###
(401936, 401936)
 We show that zero-dimensional MoS2 quantum dots (MoS2 Q<missing VAR>Ds), derived byliquid phase exfoliated MoS2 flakes, provide both hole-extraction andelectron-blocking properties.
EXCEPTION 3: IndexError for Ds
MoS2
[262.0, 20, '%', 4],[127.0, 1.4, 'eV', 2],[138.0, 3.2, 'for', 2],[164.0, -4.3, 'eV', 2],[174.0, -2.2, 'eV', 2],[210.0, -4, 'eV', 2],[434.0, 20.12, '%', 4],[447.0, 18.8, '%', 4]

OPV
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402434, 402436)
Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer comparison to gated OPV.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402451, 402452)
 We demonstrate an ionically gated planar PS-PV solar cell with ultra-thickfullerene ETL with a porous CNT<missing VAR> electron collector on top of it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402454, 402455)
 We demonstrate an ionically gated planar PS-PV solar cell with ultra-thickfullerene ETL with a porous CNT<missing VAR> electron collector on top of it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402480, 402481)
 We demonstrate an ionically gated planar PS-PV solar cell with ultra-thickfullerene ETL with a porous CNT<missing VAR> electron collector on top of it.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C60
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402524, 402525)
 Perovskitephotovoltaic devices usually have undoped electron transport layers, usuallythin like C60 due to its high resistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402557, 402558)
 Metallic low work function cathodesare extremely unstable in PS-PV due to reaction with halogens I-/Br-, and itwould be desirable to have stable carbon cathodes on top of thick lowresistance ETL for enhancing the stability of PS-PVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402560, 402561)
 Metallic low work function cathodesare extremely unstable in PS-PV due to reaction with halogens I-/Br-, and itwould be desirable to have stable carbon cathodes on top of thick lowresistance ETL for enhancing the stability of PS-PVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402573, 402573)
 Metallic low work function cathodesare extremely unstable in PS-PV due to reaction with halogens I-/Br-, and itwould be desirable to have stable carbon cathodes on top of thick lowresistance ETL for enhancing the stability of PS-PVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402576, 402576)
 Metallic low work function cathodesare extremely unstable in PS-PV due to reaction with halogens I-/Br-, and itwould be desirable to have stable carbon cathodes on top of thick lowresistance ETL for enhancing the stability of PS-PVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402628, 402629)
 Metallic low work function cathodesare extremely unstable in PS-PV due to reaction with halogens I-/Br-, and itwould be desirable to have stable carbon cathodes on top of thick lowresistance ETL for enhancing the stability of PS-PVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402631, 402631)
 Metallic low work function cathodesare extremely unstable in PS-PV due to reaction with halogens I-/Br-, and itwould be desirable to have stable carbon cathodes on top of thick lowresistance ETL for enhancing the stability of PS-PVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402648, 402649)
 We show that gating suchtop CNT<missing VAR> cathode in ionic liquid, as part of a supercapacitor charged by Vgtunes the Fermi level of CNT<missing VAR> by EDL charging, and causes lowering of a barrierat of C60/C70 ETL.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402688, 402689)
 We show that gating suchtop CNT<missing VAR> cathode in ionic liquid, as part of a supercapacitor charged by Vgtunes the Fermi level of CNT<missing VAR> by EDL charging, and causes lowering of a barrierat of C60/C70 ETL.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C60/C70
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402718, 402722)
 We show that gating suchtop CNT<missing VAR> cathode in ionic liquid, as part of a supercapacitor charged by Vgtunes the Fermi level of CNT<missing VAR> by EDL charging, and causes lowering of a barrierat of C60/C70 ETL.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

PV
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402766, 402767)
 Moreover, at higher gating voltage ions further propagatesinto fullerene by electrochemical n<missing VAR>-doping, which increases dramatically PVperformance by raising mostly two parameters Isc and FF, resulting in PCE<missing VAR>efficiency raised from 3 % to 11 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402786, 402787)
 Moreover, at higher gating voltage ions further propagatesinto fullerene by electrochemical n<missing VAR>-doping, which increases dramatically PVperformance by raising mostly two parameters Isc and FF, resulting in PCE<missing VAR>efficiency raised from 3 % to 11 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402794, 402795)
 Moreover, at higher gating voltage ions further propagatesinto fullerene by electrochemical n<missing VAR>-doping, which increases dramatically PVperformance by raising mostly two parameters Isc and FF, resulting in PCE<missing VAR>efficiency raised from 3 % to 11 %.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402816, 402816)
 N-doping of ETL strongly enhances chargecollection by ETL and CNT<missing VAR> raising Isc and lowering series resistance and thusincreasing strongly PCE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402843, 402844)
 N-doping of ETL strongly enhances chargecollection by ETL and CNT<missing VAR> raising Isc and lowering series resistance and thusincreasing strongly PCE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402868, 402869)
 N-doping of ETL strongly enhances chargecollection by ETL and CNT<missing VAR> raising Isc and lowering series resistance and thusincreasing strongly PCE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402885, 402886)
 Surprisingly Voc is not sensitive in PS-PV to externalVg gating, on the contrary, to strongly enhanced Voc in ionically gated organicPV, where it is the main gating effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402888, 402889)
 Surprisingly Voc is not sensitive in PS-PV to externalVg gating, on the contrary, to strongly enhanced Voc in ionically gated organicPV, where it is the main gating effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402925, 402926)
 Surprisingly Voc is not sensitive in PS-PV to externalVg gating, on the contrary, to strongly enhanced Voc in ionically gated organicPV, where it is the main gating effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402971, 402972)
 This insensitivity of Voc to loweringof the work function of Vg gated CNT<missing VAR> electrode is a clear indication that Vocin PS-PV is determined by inner p-i-n<missing VAR> junction formation in PS itself, viaaccumulation of its intrinsic mobile ionic species halogens and cations andtheir vacancies.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402992, 402993)
 This insensitivity of Voc to loweringof the work function of Vg gated CNT<missing VAR> electrode is a clear indication that Vocin PS-PV is determined by inner p-i-n<missing VAR> junction formation in PS itself, viaaccumulation of its intrinsic mobile ionic species halogens and cations andtheir vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(402995, 402996)
 This insensitivity of Voc to loweringof the work function of Vg gated CNT<missing VAR> electrode is a clear indication that Vocin PS-PV is determined by inner p-i-n<missing VAR> junction formation in PS itself, viaaccumulation of its intrinsic mobile ionic species halogens and cations andtheir vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV|D. S. Saranin,D. S. Muratov,R. Haroldson,A. G. Nasibulin,A. R. Ishteev,D. V. Kuznetsov,M. N. Orlova,S. I. Didenko,A. A. Zakhidov###
(403018, 403019)
 This insensitivity of Voc to loweringof the work function of Vg gated CNT<missing VAR> electrode is a clear indication that Vocin PS-PV is determined by inner p-i-n<missing VAR> junction formation in PS itself, viaaccumulation of its intrinsic mobile ionic species halogens and cations andtheir vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Terahertz Excitonics in Carbon Nanotubes: Exciton Autoionization and Multiplication|Filchito Renee G. Bagsican,Michael Wais,Natsumi Komatsu,Weilu Gao,Lincoln W. Weber,Kazunori Serita,Hironaru Murakami,Karsten Held,Frank A. Hegmann,Masayoshi Tonouchi,Junichiro Kono,Iwao Kawayama,Marco Battiato###
(403117, 403120)
 Excitons play major roles in optical processes in modern semiconductors, suchas single-wall carbon nanotubes (SWCNTs), transition metal dichalcogenides, and2D<missing VAR> perovskite quantum wells.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Terahertz Excitonics in Carbon Nanotubes: Exciton Autoionization and Multiplication|Filchito Renee G. Bagsican,Michael Wais,Natsumi Komatsu,Weilu Gao,Lincoln W. Weber,Kazunori Serita,Hironaru Murakami,Karsten Held,Frank A. Hegmann,Masayoshi Tonouchi,Junichiro Kono,Iwao Kawayama,Marco Battiato###
(403162, 403162)
 They possess extremely large binding energies(>100meV), dominating absorption and emission spectra even at hightemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Terahertz Excitonics in Carbon Nanotubes: Exciton Autoionization and Multiplication|Filchito Renee G. Bagsican,Michael Wais,Natsumi Komatsu,Weilu Gao,Lincoln W. Weber,Kazunori Serita,Hironaru Murakami,Karsten Held,Frank A. Hegmann,Masayoshi Tonouchi,Junichiro Kono,Iwao Kawayama,Marco Battiato###
(403292, 403295)
 Here, we have conducted terahertz emission and photocurrent studies onfilms of aligned single-chirality semiconducting SWCNTs and find that excitonsautoionize, i.e.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Terahertz Excitonics in Carbon Nanotubes: Exciton Autoionization and Multiplication|Filchito Renee G. Bagsican,Michael Wais,Natsumi Komatsu,Weilu Gao,Lincoln W. Weber,Kazunori Serita,Hironaru Murakami,Karsten Held,Frank A. Hegmann,Masayoshi Tonouchi,Junichiro Kono,Iwao Kawayama,Marco Battiato###
(403415, 403416)
 The created carriers can then be accelerated to emit a burst ofterahertz radiation when a dc bias is applied, with promising efficiency incomparison to standard GaAs-based emitters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Terahertz Excitonics in Carbon Nanotubes: Exciton Autoionization and Multiplication|Filchito Renee G. Bagsican,Michael Wais,Natsumi Komatsu,Weilu Gao,Lincoln W. Weber,Kazunori Serita,Hironaru Murakami,Karsten Held,Frank A. Hegmann,Masayoshi Tonouchi,Junichiro Kono,Iwao Kawayama,Marco Battiato###
(403614, 403617)
 These results not onlyelucidate the momentum-dependent ultrafast dynamics of excitons and carriers inSWCNTs but also suggest promising routes toward terahertz excitonics despitethe orders-of-magnitude mismatch between the exciton binding energies and theterahertz photon energies.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403699, 403701)
Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 2, 'D', 5]

F
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403708, 403708)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 2, 'D', 4]

B
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403714, 403714)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 2, 'D', 4]

B
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403723, 403723)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 2, 'D', 4]

CrI3
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403727, 403729)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 2, 'D', 4]

(P)
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403740, 403742)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2, 'D', 4]

P
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403765, 403765)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 2, 'D', 4]

N
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403787, 403787)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 2, 'D', 4]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403789, 403789)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 2, 'D', 4]

SH
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403805, 403806)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 2, 'D', 4]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403823, 403823)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 2, 'D', 4]

BPV
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403835, 403837)
 Antiferromagnetism (AF) in AB-stacked centrosymmetric bilayer (BL) CrI3breaks both spatial inversion (P) and time-reversal (T) symmetries butmaintains the combined PT<missing VAR> symmetry, thus inducing novel second-ordernonlinear optical (NL<missing VAR>O) responses such as second-harmonic generation (SHG),linear electric-optic effect (LEO) and bulk photovoltaic effect (BPVE).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 2, 'D', 4]

In
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403842, 403842)
 In thiswork, we calculate AF-induced NL<missing VAR>O responses of the BL<missing VAR> CrI3 based on thedensity functional theory with the generalized gradient approximation (GGA)plus onsite Coulomb correlation (U), i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 2, 'D', 3]

F
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403855, 403855)
 In thiswork, we calculate AF-induced NL<missing VAR>O responses of the BL<missing VAR> CrI3 based on thedensity functional theory with the generalized gradient approximation (GGA)plus onsite Coulomb correlation (U), i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 2, 'D', 3]

N
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403859, 403859)
 In thiswork, we calculate AF-induced NL<missing VAR>O responses of the BL<missing VAR> CrI3 based on thedensity functional theory with the generalized gradient approximation (GGA)plus onsite Coulomb correlation (U), i.e.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 2, 'D', 3]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403861, 403861)
 In thiswork, we calculate AF-induced NL<missing VAR>O responses of the BL<missing VAR> CrI3 based on thedensity functional theory with the generalized gradient approximation (GGA)plus onsite Coulomb correlation (U), i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 2, 'D', 3]

B
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403869, 403869)
 In thiswork, we calculate AF-induced NL<missing VAR>O responses of the BL<missing VAR> CrI3 based on thedensity functional theory with the generalized gradient approximation (GGA)plus onsite Coulomb correlation (U), i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 2, 'D', 3]

CrI3
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403872, 403874)
 In thiswork, we calculate AF-induced NL<missing VAR>O responses of the BL<missing VAR> CrI3 based on thedensity functional theory with the generalized gradient approximation (GGA)plus onsite Coulomb correlation (U), i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2, 'D', 3]

(U)
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403914, 403916)
 In thiswork, we calculate AF-induced NL<missing VAR>O responses of the BL<missing VAR> CrI3 based on thedensity functional theory with the generalized gradient approximation (GGA)plus onsite Coulomb correlation (U), i.e.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 2, 'D', 3]

U
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403931, 403931)
, the GGA+U method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, 'D', 2]

SH
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403950, 403951)
 Interestingly, wefind that the magnetic SHG<missing VAR>, LEO and photocurrent in the AF BL<missing VAR> CrI3 are huge,being comparable or even larger than that of the well-known nonmagneticnoncentrosymmetric semiconductors.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 2, 'D', 1]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403957, 403957)
 Interestingly, wefind that the magnetic SHG<missing VAR>, LEO and photocurrent in the AF BL<missing VAR> CrI3 are huge,being comparable or even larger than that of the well-known nonmagneticnoncentrosymmetric semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'D', 1]

F
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403968, 403968)
 Interestingly, wefind that the magnetic SHG<missing VAR>, LEO and photocurrent in the AF BL<missing VAR> CrI3 are huge,being comparable or even larger than that of the well-known nonmagneticnoncentrosymmetric semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, 'D', 1]

B
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403970, 403970)
 Interestingly, wefind that the magnetic SHG<missing VAR>, LEO and photocurrent in the AF BL<missing VAR> CrI3 are huge,being comparable or even larger than that of the well-known nonmagneticnoncentrosymmetric semiconductors.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2, 'D', 1]

CrI3
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(403973, 403975)
 Interestingly, wefind that the magnetic SHG<missing VAR>, LEO and photocurrent in the AF BL<missing VAR> CrI3 are huge,being comparable or even larger than that of the well-known nonmagneticnoncentrosymmetric semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'D', 1]

SH
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404022, 404023)
 For example, the calculated SHG<missing VAR> coefficientsare in the same order of magnitude as that of MoS2 monolayer (ML), the mostpromising 2D material for NL<missing VAR>O devices.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, 'D', 0]

MoS2
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404049, 404051)
 For example, the calculated SHG<missing VAR> coefficientsare in the same order of magnitude as that of MoS2 monolayer (ML), the mostpromising 2D material for NL<missing VAR>O devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'D', 0]

N
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404073, 404073)
 For example, the calculated SHG<missing VAR> coefficientsare in the same order of magnitude as that of MoS2 monolayer (ML), the mostpromising 2D material for NL<missing VAR>O devices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'D', 0]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404075, 404075)
 For example, the calculated SHG<missing VAR> coefficientsare in the same order of magnitude as that of MoS2 monolayer (ML), the mostpromising 2D material for NL<missing VAR>O devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 0]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404086, 404086)
 The calculated LEO coefficients arealmost three times larger than that of MoS2 ML.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'D', 1]

MoS2
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404107, 404109)
 The calculated LEO coefficients arealmost three times larger than that of MoS2 ML.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, 'D', 1]

N
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404119, 404119)
 The calculated NL<missing VAR>Ophotocurrent in the CrI3 BL<missing VAR> is among the largest values predicted so far forthe BPVE<missing VAR> materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'D', 2]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404121, 404121)
 The calculated NL<missing VAR>Ophotocurrent in the CrI3 BL<missing VAR> is among the largest values predicted so far forthe BPVE<missing VAR> materials.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'D', 2]

CrI3
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404130, 404132)
 The calculated NL<missing VAR>Ophotocurrent in the CrI3 BL<missing VAR> is among the largest values predicted so far forthe BPVE<missing VAR> materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'D', 2]

B
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404134, 404134)
 The calculated NL<missing VAR>Ophotocurrent in the CrI3 BL<missing VAR> is among the largest values predicted so far forthe BPVE<missing VAR> materials.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 2, 'D', 2]

BPV
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404158, 404160)
 The calculated NL<missing VAR>Ophotocurrent in the CrI3 BL<missing VAR> is among the largest values predicted so far forthe BPVE<missing VAR> materials.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 2, 'D', 2]

N
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404185, 404185)
 On the other hand, unlike nonmagnetic semiconductors, theNL<missing VAR>O responses in the AF BL<missing VAR> CrI3 are nonreciprocal and also switchable byrotating magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'D', 3]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404187, 404187)
 On the other hand, unlike nonmagnetic semiconductors, theNL<missing VAR>O responses in the AF BL<missing VAR> CrI3 are nonreciprocal and also switchable byrotating magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, 'D', 3]

F
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404196, 404196)
 On the other hand, unlike nonmagnetic semiconductors, theNL<missing VAR>O responses in the AF BL<missing VAR> CrI3 are nonreciprocal and also switchable byrotating magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2, 'D', 3]

B
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404198, 404198)
 On the other hand, unlike nonmagnetic semiconductors, theNL<missing VAR>O responses in the AF BL<missing VAR> CrI3 are nonreciprocal and also switchable byrotating magnetization direction.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'D', 3]

CrI3
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404201, 404203)
 On the other hand, unlike nonmagnetic semiconductors, theNL<missing VAR>O responses in the AF BL<missing VAR> CrI3 are nonreciprocal and also switchable byrotating magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 2, 'D', 3]

F
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404242, 404242)
 Therefore, our interesting findings indicatethat the AF BL<missing VAR> CrI3 will not only provide a valuable platform for exploringnew physics of low-dimensional magnetism but also have promising applicationsin magnetic NL<missing VAR>O and LEO devices such as frequency conversion, electro-opticalswitches, and light signal modulators as well as high energy conversionefficiency photovoltaic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'D', 4]

B
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404244, 404244)
 Therefore, our interesting findings indicatethat the AF BL<missing VAR> CrI3 will not only provide a valuable platform for exploringnew physics of low-dimensional magnetism but also have promising applicationsin magnetic NL<missing VAR>O and LEO devices such as frequency conversion, electro-opticalswitches, and light signal modulators as well as high energy conversionefficiency photovoltaic solar cells.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 2, 'D', 4]

CrI3
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404247, 404249)
 Therefore, our interesting findings indicatethat the AF BL<missing VAR> CrI3 will not only provide a valuable platform for exploringnew physics of low-dimensional magnetism but also have promising applicationsin magnetic NL<missing VAR>O and LEO devices such as frequency conversion, electro-opticalswitches, and light signal modulators as well as high energy conversionefficiency photovoltaic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 2, 'D', 4]

N
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404297, 404297)
 Therefore, our interesting findings indicatethat the AF BL<missing VAR> CrI3 will not only provide a valuable platform for exploringnew physics of low-dimensional magnetism but also have promising applicationsin magnetic NL<missing VAR>O and LEO devices such as frequency conversion, electro-opticalswitches, and light signal modulators as well as high energy conversionefficiency photovoltaic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 2, 'D', 4]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404299, 404299)
 Therefore, our interesting findings indicatethat the AF BL<missing VAR> CrI3 will not only provide a valuable platform for exploringnew physics of low-dimensional magnetism but also have promising applicationsin magnetic NL<missing VAR>O and LEO devices such as frequency conversion, electro-opticalswitches, and light signal modulators as well as high energy conversionefficiency photovoltaic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 2, 'D', 4]

O
###Antiferromagnetism-induced second-order nonlinear optical responses of centrosymmetric bilayer CrI$_3$|Vijay Kumar Gudelli,Guang-Yu Guo###
(404305, 404305)
 Therefore, our interesting findings indicatethat the AF BL<missing VAR> CrI3 will not only provide a valuable platform for exploringnew physics of low-dimensional magnetism but also have promising applicationsin magnetic NL<missing VAR>O and LEO devices such as frequency conversion, electro-opticalswitches, and light signal modulators as well as high energy conversionefficiency photovoltaic solar cells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 2, 'D', 4]

SiH
###A Gaussian Approximation Potential for Amorphous Si:H|Davis Unruh,Reza Vatan Meidanshahi,Stephen M. Goodnick,Gábor Csányi,Gergely T. Zimányi###
(404376, 404377)
A Gaussian Approximation Potential for Amorphous SiH.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###A Gaussian Approximation Potential for Amorphous Si:H|Davis Unruh,Reza Vatan Meidanshahi,Stephen M. Goodnick,Gábor Csányi,Gergely T. Zimányi###
(404392, 404392)
 Hydrogenation of amorphous silicon (a-SiH) is critical for reducing defectdensities, passivating mid-gap states and surfaces, and improvingphotoconductivity in silicon-based electro-optical devices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###A Gaussian Approximation Potential for Amorphous Si:H|Davis Unruh,Reza Vatan Meidanshahi,Stephen M. Goodnick,Gábor Csányi,Gergely T. Zimányi###
(404489, 404489)
 Modelling theatomic scale structure of this material is critical to understanding theseprocesses, which in turn is needed to describe c<missing VAR>-Si/a-SiH heterjunctions thatare at the heart of the modern solar cells with world record efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiH
###A Gaussian Approximation Potential for Amorphous Si:H|Davis Unruh,Reza Vatan Meidanshahi,Stephen M. Goodnick,Gábor Csányi,Gergely T. Zimányi###
(404493, 404494)
 Modelling theatomic scale structure of this material is critical to understanding theseprocesses, which in turn is needed to describe c<missing VAR>-Si/a-SiH heterjunctions thatare at the heart of the modern solar cells with world record efficiency.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A Gaussian Approximation Potential for Amorphous Si:H|Davis Unruh,Reza Vatan Meidanshahi,Stephen M. Goodnick,Gábor Csányi,Gergely T. Zimányi###
(404772, 404772)
 Here we extend the Gaussian approximation potential (G<missing VAR>AP) forsilicon by incorporating the interaction with hydrogen, thereby significantlyimproving the degree of realism with which amorphous silicon can be modelled.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiH
###A Gaussian Approximation Potential for Amorphous Si:H|Davis Unruh,Reza Vatan Meidanshahi,Stephen M. Goodnick,Gábor Csányi,Gergely T. Zimányi###
(404832, 404833)
We show that our SiH G<missing VAR>AP enables the simulation of hydrogenated silicon withan accuracy very close to DFT, but with computational expense and run timesreduced by several orders of magnitude for large structures.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A Gaussian Approximation Potential for Amorphous Si:H|Davis Unruh,Reza Vatan Meidanshahi,Stephen M. Goodnick,Gábor Csányi,Gergely T. Zimányi###
(404837, 404837)
We show that our SiH G<missing VAR>AP enables the simulation of hydrogenated silicon withan accuracy very close to DFT, but with computational expense and run timesreduced by several orders of magnitude for large structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiH
###A Gaussian Approximation Potential for Amorphous Si:H|Davis Unruh,Reza Vatan Meidanshahi,Stephen M. Goodnick,Gábor Csányi,Gergely T. Zimányi###
(404916, 404917)
 We demonstrate thecapabilities of the SiH G<missing VAR>AP by creating models of hydrogenated liquid andamorphous silicon, and showing that their energies, forces and stresses are inexcellent agreement with DFT results, and their structure as captured by bondand angle distributions, with both DFT and experiments.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A Gaussian Approximation Potential for Amorphous Si:H|Davis Unruh,Reza Vatan Meidanshahi,Stephen M. Goodnick,Gábor Csányi,Gergely T. Zimányi###
(404921, 404921)
 We demonstrate thecapabilities of the SiH G<missing VAR>AP by creating models of hydrogenated liquid andamorphous silicon, and showing that their energies, forces and stresses are inexcellent agreement with DFT results, and their structure as captured by bondand angle distributions, with both DFT and experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HP
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405045, 405046)
 Inorganic Halide perovskites (HPs) of the CsPbX<missing VAR>3 (X<missing VAR>I, Br, Cl) type havereached prominence in photovoltaic solar cell efficiencies.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsPb
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405054, 405055)
 Inorganic Halide perovskites (HPs) of the CsPbX<missing VAR>3 (X<missing VAR>I, Br, Cl) type havereached prominence in photovoltaic solar cell efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405061, 405061)
 Inorganic Halide perovskites (HPs) of the CsPbX<missing VAR>3 (X<missing VAR>I, Br, Cl) type havereached prominence in photovoltaic solar cell efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405064, 405064)
 Inorganic Halide perovskites (HPs) of the CsPbX<missing VAR>3 (X<missing VAR>I, Br, Cl) type havereached prominence in photovoltaic solar cell efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405067, 405067)
 Inorganic Halide perovskites (HPs) of the CsPbX<missing VAR>3 (X<missing VAR>I, Br, Cl) type havereached prominence in photovoltaic solar cell efficiencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405260, 405260)
 In this paper we study threefundamental Design Principles (DPs) for ideal doping, applying them viadensity functional doping theory to these HPs<missing VAR>, thus identifying the violatedD<missing VAR>P that explains the doping limitations and asymmetry in these HPs<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HP
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405311, 405312)
 In this paper we study threefundamental Design Principles (DPs) for ideal doping, applying them viadensity functional doping theory to these HPs<missing VAR>, thus identifying the violatedD<missing VAR>P that explains the doping limitations and asymmetry in these HPs<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405326, 405326)
 In this paper we study threefundamental Design Principles (DPs) for ideal doping, applying them viadensity functional doping theory to these HPs<missing VAR>, thus identifying the violatedD<missing VAR>P that explains the doping limitations and asymmetry in these HPs<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HP
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405346, 405347)
 In this paper we study threefundamental Design Principles (DPs) for ideal doping, applying them viadensity functional doping theory to these HPs<missing VAR>, thus identifying the violatedD<missing VAR>P that explains the doping limitations and asymmetry in these HPs<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405360, 405360)
 Here, thetarget D<missing VAR>P are (i) requires that the thermodynamic transition level induced bythe dopants must ideally be energetically shallow both for donors (n<missing VAR>-type) oracceptors (p<missing VAR>-type); D<missing VAR>P-(ii) requires that the Fermi level pinning energiesfor electrons and holes (being the limiting values of the Fermi level before astructural defect that compensate the doping forms spontaneously) shouldideally be located inside the conduction band for n<missing VAR>-type doping and inside thevalence band for p<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405424, 405424)
 Here, thetarget D<missing VAR>P are (i) requires that the thermodynamic transition level induced bythe dopants must ideally be energetically shallow both for donors (n<missing VAR>-type) oracceptors (p<missing VAR>-type); D<missing VAR>P-(ii) requires that the Fermi level pinning energiesfor electrons and holes (being the limiting values of the Fermi level before astructural defect that compensate the doping forms spontaneously) shouldideally be located inside the conduction band for n<missing VAR>-type doping and inside thevalence band for p<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405538, 405538)
 D<missing VAR>P-(iii) requires that the doping-inducedequilibrium Fermi energy shifts towards the conduction band for n<missing VAR>-type doping(shift towards the valence band, for p<missing VAR>-type doping) to be sufficiently large.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HP
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405624, 405625)
We find that, even though in HPs<missing VAR> based on Br and Cl there are numerous shallowlevel dopants that satisfy D<missing VAR>P-(i), in contrast D<missing VAR>P-(ii) is satisfied only forholes and D<missing VAR>P-(iii) fail for both holes and electrons, being the ultimatebottleneck for the n<missing VAR>-type doping in Iodine HPs<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Br
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405632, 405632)
We find that, even though in HPs<missing VAR> based on Br and Cl there are numerous shallowlevel dopants that satisfy D<missing VAR>P-(i), in contrast D<missing VAR>P-(ii) is satisfied only forholes and D<missing VAR>P-(iii) fail for both holes and electrons, being the ultimatebottleneck for the n<missing VAR>-type doping in Iodine HPs<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405636, 405636)
We find that, even though in HPs<missing VAR> based on Br and Cl there are numerous shallowlevel dopants that satisfy D<missing VAR>P-(i), in contrast D<missing VAR>P-(ii) is satisfied only forholes and D<missing VAR>P-(iii) fail for both holes and electrons, being the ultimatebottleneck for the n<missing VAR>-type doping in Iodine HPs<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405656, 405656)
We find that, even though in HPs<missing VAR> based on Br and Cl there are numerous shallowlevel dopants that satisfy D<missing VAR>P-(i), in contrast D<missing VAR>P-(ii) is satisfied only forholes and D<missing VAR>P-(iii) fail for both holes and electrons, being the ultimatebottleneck for the n<missing VAR>-type doping in Iodine HPs<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405668, 405668)
We find that, even though in HPs<missing VAR> based on Br and Cl there are numerous shallowlevel dopants that satisfy D<missing VAR>P-(i), in contrast D<missing VAR>P-(ii) is satisfied only forholes and D<missing VAR>P-(iii) fail for both holes and electrons, being the ultimatebottleneck for the n<missing VAR>-type doping in Iodine HPs<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405688, 405688)
We find that, even though in HPs<missing VAR> based on Br and Cl there are numerous shallowlevel dopants that satisfy D<missing VAR>P-(i), in contrast D<missing VAR>P-(ii) is satisfied only forholes and D<missing VAR>P-(iii) fail for both holes and electrons, being the ultimatebottleneck for the n<missing VAR>-type doping in Iodine HPs<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HP
###Intrinsic doping limitations in inorganic lead halide perovskites|Fernando P. Sabino,Alex Zunger,Gustavo M. Dalpian###
(405730, 405731)
We find that, even though in HPs<missing VAR> based on Br and Cl there are numerous shallowlevel dopants that satisfy D<missing VAR>P-(i), in contrast D<missing VAR>P-(ii) is satisfied only forholes and D<missing VAR>P-(iii) fail for both holes and electrons, being the ultimatebottleneck for the n<missing VAR>-type doping in Iodine HPs<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405748, 405750)
Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[378.0, 40, 'to', 4],[383.0, 400, 'nm', 4],[419.0, 500, 'us', 4],[430.0, 20, 'cm', 4],[456.0, 99.9, '%', 5],[596.0, 7, '%', 7]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405759, 405759)
Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 40, 'to', 4],[374.0, 400, 'nm', 4],[410.0, 500, 'us', 4],[421.0, 20, 'cm', 4],[447.0, 99.9, '%', 5],[587.0, 7, '%', 7]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405815, 405815)
 Multijunction solar cells in a tandem configuration could further lower thecosts of electricity if crystalline Si (c<missing VAR>-Si) is used as bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 40, 'to', 3],[318.0, 400, 'nm', 3],[354.0, 500, 'us', 3],[365.0, 20, 'cm', 3],[391.0, 99.9, '%', 4],[531.0, 7, '%', 6]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405820, 405820)
 Multijunction solar cells in a tandem configuration could further lower thecosts of electricity if crystalline Si (c<missing VAR>-Si) is used as bottom cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 40, 'to', 3],[313.0, 400, 'nm', 3],[349.0, 500, 'us', 3],[360.0, 20, 'cm', 3],[386.0, 99.9, '%', 4],[526.0, 7, '%', 6]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405850, 405850)
 However,for direct monolithic integration on c<missing VAR>-Si, only a restricted number of top andbottom cell architectures are compatible, due to either epitaxy or hightemperature constraints, where the interface between subcells is subject to atrade-off between transmittance, electrical interconnection, and bottom celldegradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 40, 'to', 2],[283.0, 400, 'nm', 2],[319.0, 500, 'us', 2],[330.0, 20, 'cm', 2],[356.0, 99.9, '%', 3],[496.0, 7, '%', 5]

Si/Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405943, 405945)
 Using polySi/SiOx passivating contacts for Si, this degradationcan be largely circumvented by tuning the polySi/SiOx stacks to promotegettering of contaminants admitted into the Si bottom cell during the top cellsynthesis.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[183.0, 40, 'to', 1],[188.0, 400, 'nm', 1],[224.0, 500, 'us', 1],[235.0, 20, 'cm', 1],[261.0, 99.9, '%', 2],[401.0, 7, '%', 4]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405954, 405954)
 Using polySi/SiOx passivating contacts for Si, this degradationcan be largely circumvented by tuning the polySi/SiOx stacks to promotegettering of contaminants admitted into the Si bottom cell during the top cellsynthesis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 40, 'to', 1],[179.0, 400, 'nm', 1],[215.0, 500, 'us', 1],[226.0, 20, 'cm', 1],[252.0, 99.9, '%', 2],[392.0, 7, '%', 4]

Si/Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(405977, 405979)
 Using polySi/SiOx passivating contacts for Si, this degradationcan be largely circumvented by tuning the polySi/SiOx stacks to promotegettering of contaminants admitted into the Si bottom cell during the top cellsynthesis.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[149.0, 40, 'to', 1],[154.0, 400, 'nm', 1],[190.0, 500, 'us', 1],[201.0, 20, 'cm', 1],[227.0, 99.9, '%', 2],[367.0, 7, '%', 4]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406001, 406001)
 Using polySi/SiOx passivating contacts for Si, this degradationcan be largely circumvented by tuning the polySi/SiOx stacks to promotegettering of contaminants admitted into the Si bottom cell during the top cellsynthesis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 40, 'to', 1],[132.0, 400, 'nm', 1],[168.0, 500, 'us', 1],[179.0, 20, 'cm', 1],[205.0, 99.9, '%', 2],[345.0, 7, '%', 4]

Cu2ZnSnS4
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406040, 406045)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 40, 'to', 0],[88.0, 400, 'nm', 0],[124.0, 500, 'us', 0],[135.0, 20, 'cm', 0],[161.0, 99.9, '%', 1],[301.0, 7, '%', 3]

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406048, 406048)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 40, 'to', 0],[85.0, 400, 'nm', 0],[121.0, 500, 'us', 0],[132.0, 20, 'cm', 0],[158.0, 99.9, '%', 1],[298.0, 7, '%', 3]

S
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406051, 406051)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 40, 'to', 0],[82.0, 400, 'nm', 0],[118.0, 500, 'us', 0],[129.0, 20, 'cm', 0],[155.0, 99.9, '%', 1],[295.0, 7, '%', 3]

CuGaSe2
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406055, 406058)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 40, 'to', 0],[75.0, 400, 'nm', 0],[111.0, 500, 'us', 0],[122.0, 20, 'cm', 0],[148.0, 99.9, '%', 1],[288.0, 7, '%', 3]

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406061, 406061)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 40, 'to', 0],[72.0, 400, 'nm', 0],[108.0, 500, 'us', 0],[119.0, 20, 'cm', 0],[145.0, 99.9, '%', 1],[285.0, 7, '%', 3]

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406063, 406063)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 40, 'to', 0],[70.0, 400, 'nm', 0],[106.0, 500, 'us', 0],[117.0, 20, 'cm', 0],[143.0, 99.9, '%', 1],[283.0, 7, '%', 3]

AgInGaSe2
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406068, 406072)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 40, 'to', 0],[61.0, 400, 'nm', 0],[97.0, 500, 'us', 0],[108.0, 20, 'cm', 0],[134.0, 99.9, '%', 1],[274.0, 7, '%', 3]

I
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406076, 406076)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 40, 'to', 0],[57.0, 400, 'nm', 0],[93.0, 500, 'us', 0],[104.0, 20, 'cm', 0],[130.0, 99.9, '%', 1],[270.0, 7, '%', 3]

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406078, 406078)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 40, 'to', 0],[55.0, 400, 'nm', 0],[91.0, 500, 'us', 0],[102.0, 20, 'cm', 0],[128.0, 99.9, '%', 1],[268.0, 7, '%', 3]

S
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406089, 406089)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 40, 'to', 0],[44.0, 400, 'nm', 0],[80.0, 500, 'us', 0],[91.0, 20, 'cm', 0],[117.0, 99.9, '%', 1],[257.0, 7, '%', 3]

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406093, 406093)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 40, 'to', 0],[40.0, 400, 'nm', 0],[76.0, 500, 'us', 0],[87.0, 20, 'cm', 0],[113.0, 99.9, '%', 1],[253.0, 7, '%', 3]

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406102, 406102)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 40, 'to', 0],[31.0, 400, 'nm', 0],[67.0, 500, 'us', 0],[78.0, 20, 'cm', 0],[104.0, 99.9, '%', 1],[244.0, 7, '%', 3]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406121, 406121)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 40, 'to', 0],[12.0, 400, 'nm', 0],[48.0, 500, 'us', 0],[59.0, 20, 'cm', 0],[85.0, 99.9, '%', 1],[225.0, 7, '%', 3]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406144, 406144)
 Applying this concept to the low-cost top cell chalcogenidesCu2ZnSnS4 (CZTS), CuGaSe2 (CG<missing VAR>Se) and AgInGaSe2 (AIG<missing VAR>Se), fabricated under harshS or Se atmospheres above 550 degC, we show that increasing theheavily-doped polySi layer thickness from 40 to up to 400 nm prevents areduction in Si carrier lifetime by one order of magnitude, with finallifetimes above 500 us uniformly across areas up to 20 cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 40, 'to', 0],[11.0, 400, 'nm', 0],[25.0, 500, 'us', 0],[36.0, 20, 'cm', 0],[62.0, 99.9, '%', 1],[202.0, 7, '%', 3]

In
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406184, 406184)
 In all cases, theincreased resilience was correlated with a 99.9% reduction in contaminantconcentration in the c<missing VAR>-Si bulk, provided by the thick polySi layer, which actsas a buried gettering layer in the tandem structure without compromising the Sipassivation quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 40, 'to', 1],[51.0, 400, 'nm', 1],[15.0, 500, 'us', 1],[4.0, 20, 'cm', 1],[22.0, 99.9, '%', 0],[162.0, 7, '%', 2]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406224, 406224)
 In all cases, theincreased resilience was correlated with a 99.9% reduction in contaminantconcentration in the c<missing VAR>-Si bulk, provided by the thick polySi layer, which actsas a buried gettering layer in the tandem structure without compromising the Sipassivation quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 40, 'to', 1],[91.0, 400, 'nm', 1],[55.0, 500, 'us', 1],[44.0, 20, 'cm', 1],[18.0, 99.9, '%', 0],[122.0, 7, '%', 2]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406238, 406238)
 In all cases, theincreased resilience was correlated with a 99.9% reduction in contaminantconcentration in the c<missing VAR>-Si bulk, provided by the thick polySi layer, which actsas a buried gettering layer in the tandem structure without compromising the Sipassivation quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 40, 'to', 1],[105.0, 400, 'nm', 1],[69.0, 500, 'us', 1],[58.0, 20, 'cm', 1],[32.0, 99.9, '%', 0],[108.0, 7, '%', 2]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406272, 406272)
 In all cases, theincreased resilience was correlated with a 99.9% reduction in contaminantconcentration in the c<missing VAR>-Si bulk, provided by the thick polySi layer, which actsas a buried gettering layer in the tandem structure without compromising the Sipassivation quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 40, 'to', 1],[139.0, 400, 'nm', 1],[103.0, 500, 'us', 1],[92.0, 20, 'cm', 1],[66.0, 99.9, '%', 0],[74.0, 7, '%', 2]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406282, 406282)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 40, 'to', 2],[149.0, 400, 'nm', 2],[113.0, 500, 'us', 2],[102.0, 20, 'cm', 2],[76.0, 99.9, '%', 1],[64.0, 7, '%', 1]

I
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406291, 406291)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 40, 'to', 2],[158.0, 400, 'nm', 2],[122.0, 500, 'us', 2],[111.0, 20, 'cm', 2],[85.0, 99.9, '%', 1],[55.0, 7, '%', 1]

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406293, 406293)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 40, 'to', 2],[160.0, 400, 'nm', 2],[124.0, 500, 'us', 2],[113.0, 20, 'cm', 2],[87.0, 99.9, '%', 1],[53.0, 7, '%', 1]

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406297, 406297)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 40, 'to', 2],[164.0, 400, 'nm', 2],[128.0, 500, 'us', 2],[117.0, 20, 'cm', 2],[91.0, 99.9, '%', 1],[49.0, 7, '%', 1]

Se
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406299, 406299)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 40, 'to', 2],[166.0, 400, 'nm', 2],[130.0, 500, 'us', 2],[119.0, 20, 'cm', 2],[93.0, 99.9, '%', 1],[47.0, 7, '%', 1]

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406303, 406303)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 40, 'to', 2],[170.0, 400, 'nm', 2],[134.0, 500, 'us', 2],[123.0, 20, 'cm', 2],[97.0, 99.9, '%', 1],[43.0, 7, '%', 1]

S
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406306, 406306)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 40, 'to', 2],[173.0, 400, 'nm', 2],[137.0, 500, 'us', 2],[126.0, 20, 'cm', 2],[100.0, 99.9, '%', 1],[40.0, 7, '%', 1]

Cu
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406320, 406320)
 The Si resilience decreased as AIG<missing VAR>Se > CG<missing VAR>Se > CZTS, inaccordance with the measured Cu contamination profiles and higher annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 40, 'to', 2],[187.0, 400, 'nm', 2],[151.0, 500, 'us', 2],[140.0, 20, 'cm', 2],[114.0, 99.9, '%', 1],[26.0, 7, '%', 1]

C
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406357, 406357)
 An efficiency of up to 7% was achieved for a CZTS/Si tandem,where the Si bottom cell is no longer the limiting factor.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 40, 'to', 3],[224.0, 400, 'nm', 3],[188.0, 500, 'us', 3],[177.0, 20, 'cm', 3],[151.0, 99.9, '%', 2],[11.0, 7, '%', 0]

S/Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406360, 406362)
 An efficiency of up to 7% was achieved for a CZTS/Si tandem,where the Si bottom cell is no longer the limiting factor.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[232.0, 40, 'to', 3],[227.0, 400, 'nm', 3],[191.0, 500, 'us', 3],[180.0, 20, 'cm', 3],[154.0, 99.9, '%', 2],[14.0, 7, '%', 0]

Si
###Gettering in polySi/SiOx passivating contacts enables Si-based tandem solar cells with high thermal and contamination resilience|Alireza Assar,Filipe Martinho,Jes Larsen,Nishant Saini,Denver Shearer,Marcos V. Moro,Fredrik Stulen,Sigbjørn Grini,Sara Engberg,Eugen Stamate,Jørgen Schou,Lasse Vines,Stela Canulescu,Charlotte Platzer-Björkman,Ole Hansen###
(406372, 406372)
 An efficiency of up to 7% was achieved for a CZTS/Si tandem,where the Si bottom cell is no longer the limiting factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 40, 'to', 3],[239.0, 400, 'nm', 3],[203.0, 500, 'us', 3],[192.0, 20, 'cm', 3],[166.0, 99.9, '%', 2],[26.0, 7, '%', 0]

